KR20230165047A - Method of processing substrate using substrate processing apparatus - Google Patents

Abstract

A substrate processing method according to an aspect of the present invention includes a process chamber having a reaction space formed therein, a substrate supporter coupled to the process chamber to support a substrate and including an electrostatic electrode, and a process gas for supplying a process gas to the reaction space. A substrate processing method using a substrate processing apparatus including a gas injection unit installed in the process chamber to face the substrate support, wherein the reaction space is maintained in a vacuum state, the substrate is placed on the substrate support, and the electrostatic electrode is electrostatically charged. chucking the substrate to the substrate supporter by applying power, maintaining the reaction space in a vacuum state, and supplying heating gas into the reaction space through the gas injection unit while the substrate supporter is heated to heat the substrate. It includes the step of heating, and the step of heating the substrate may be performed at least during the step of chucking the substrate.

Description

{Method of processing substrate using substrate processing apparatus}

The present invention relates to semiconductor manufacturing, and more specifically, to a substrate processing apparatus and a substrate processing method using the same.

In order to manufacture semiconductor devices, various substrate processing processes are performed in a substrate processing apparatus in a vacuum atmosphere. For example, processes such as loading a substrate into a process chamber and depositing a thin film on the substrate or etching the thin film may be performed. Here, the substrate is seated on a substrate supporter installed in the process chamber, and process gas can be supplied to the substrate through a gas injection unit installed on top of the substrate supporter.

In such a substrate processing apparatus, when heating of the substrate is necessary, the substrate support portion can be heated in advance using a heater installed within the substrate support portion. Typically, after chucking a substrate on a substrate supporter under a vacuum atmosphere, the pressure within the process chamber is increased to transfer heat from the substrate supporter to the substrate, thereby heating the substrate.

However, in the substrate chucking step, it is necessary to maintain the process chamber at a low pressure to prevent slip of the substrate, and to increase the pressure in the substrate heating step, so the substrate chucking step and the substrate heating step are performed separately. There is a need. Therefore, if the substrate chucking step and the substrate heating step are performed separately, there is a problem that the overall substrate processing time increases and productivity decreases.

The present invention is intended to solve various problems including the problems described above, and its purpose is to provide a substrate processing device that can increase productivity by reducing substrate processing time and a substrate processing method using the same. However, these tasks are illustrative and do not limit the scope of the present invention.

A substrate processing method according to an aspect of the present invention for solving the above problem includes a process chamber having a reaction space formed therein, a substrate supporter coupled to the process chamber to support the substrate and including an electrostatic electrode, and a process using the reaction space. A substrate processing method using a substrate processing apparatus including a gas injection unit installed in the process chamber opposite to the substrate support to supply gas, wherein the reaction space is maintained in a vacuum state and the substrate is seated on the substrate support. , chucking the substrate to the substrate supporter by applying electrostatic power to the electrostatic electrode, maintaining the reaction space in a vacuum state, and heating the substrate supporter into the reaction space through the gas injection unit in a heated state. A step of heating the substrate by supplying gas, and the step of heating the substrate may be performed at least during the step of chucking the substrate.

In the substrate processing method, heating the substrate and chucking the substrate may be started simultaneously.

In the substrate processing method, after heating the substrate, the step includes supplying a purge gas into the reaction space through the gas injection unit, and the flow rate of the purge gas is the flow rate of the heating gas in the heating step. It can be less.

In the substrate processing method, in the step of supplying the purge gas, the heating gas is supplied together with the purge gas to additionally heat the substrate, and in the step of supplying the purge gas, the purge gas and the heating gas are supplied together. The sum of the flow rates may be less than the flow rate of the heating gas in the step of heating the substrate.

In the substrate processing method, the pressure within the process chamber in the step of supplying the purge gas may be greater than the pressure within the process chamber in the steps of heating the substrate and chucking the substrate.

In the substrate processing method, the process chamber is pumped by a vacuum pump connected through an exhaust pipe, a throttle valve for adjusting the opening rate is connected to the exhaust pipe, and the steps of heating the substrate and heating the substrate. In the chucking step, the throttle valve may be fully opened, and in the purge gas supply step, the throttle valve may be partially closed.

In the substrate processing method, the heating gas may include nitrogen (N2) gas, and the purge gas may include argon (Ar) gas.

In the substrate processing method, in the step of heating the substrate and the step of chucking the substrate, only the heating gas may be supplied into the reaction space without a separate purge gas.

In the substrate processing method, the step of chucking the substrate includes forming a plasma atmosphere in the reaction space by applying RF power to the gas injection unit, and in the step of heating the substrate, the heating gas is converted into the plasma. It can also be supplied during the atmosphere forming stage.

According to the substrate processing apparatus and substrate processing method according to some embodiments of the present invention as described above, productivity can be increased by reducing substrate processing time. Of course, the scope of the present invention is not limited by this effect.

1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a flowchart showing a substrate processing method according to an embodiment of the present invention.
Figure 3 is a flowchart showing a substrate processing method according to another embodiment of the present invention.
4 and 5 are time charts showing process control over time in a substrate processing method according to some embodiments of the present invention.
Figure 6 is a graph showing the change in temperature of the thermostatic chuck over time in the pre-deposition stage in the substrate processing method according to the comparative example and the embodiment of the present invention.
Figure 7 is a graph showing the change in temperature of the thermostatic chuck over time in the deposition step in the substrate processing method according to the comparative example and the embodiment of the present invention.

Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the following examples may be modified into various other forms, and the scope of the present invention is as follows. It is not limited to the examples. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the spirit of the present invention to those skilled in the art. Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

Figure 1 is a schematic diagram showing a substrate processing apparatus 100 according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 100 may include a process chamber 110, a gas injection unit 120, and a substrate support unit 130.

More specifically, the process chamber 110 may include a reaction space 112 in which the substrate S can be processed. The process chamber 110 may be connected to a vacuum pump 118 through an exhaust pipe 114 to form a vacuum atmosphere and be pumped. A throttle valve 117 for controlling the opening rate may be connected to the exhaust pipe 114. The throttle valve 117 may be used to control the pressure of the reaction space 112 within the process chamber 110. For example, when the throttle valve 117 is fully open, the process chamber 110 is maintained in a very low pressure vacuum atmosphere, and as the degree to which the throttle valve 117 is closed increases, the process chamber 110 is maintained in a vacuum atmosphere of very low pressure. The pressure in chamber 110 may increase.

Furthermore, the process chamber 110 may be provided with an entrance for loading or unloading the substrate S into or from the reaction space 112 and a gate structure (not shown) for opening and closing the same. The process chamber 110 may be provided in various shapes, and may include, for example, a side wall defining the reaction space 112 and a cover located on top of the side wall, for example, a top lead.

The gas injection unit 120 may be coupled to the process chamber 110 to supply the process gas supplied from outside the process chamber 110 to the reaction space 112. More specifically, the gas injection unit 120 may be installed in the process chamber 110 to face the substrate support unit 130. For example, the gas injection unit 120 may be installed at the top of the process chamber 110 to spray process gas on the substrate S seated on the substrate support 130.

In some embodiments, the gas injection unit 120 has an inlet 122 through which the process gas is introduced through the gas pipe 126, and the process gas introduced through the inlet 122 and dispersed therein is distributed to the reaction space 112. ) may include a distribution plate (124) for spraying into. Furthermore, the gas injection unit 120 may further include a blocker plate therein to disperse the process gas that has passed through the inlet 122.

In some embodiments, the gas injection unit 120 may have various shapes, such as a shower head shape or a nozzle shape. When the gas injection unit 120 is in the form of a shower head, the gas injection unit 120 may be coupled to the process chamber 110 in a form that partially covers the upper part of the process chamber 110. For example, the gas injection unit 120 may be coupled to the cover or top lid of the process chamber 110.

The substrate support 130 may be coupled to the process chamber 110 to support the substrate S. For example, the substrate support 130 may be installed in the process chamber 110 to face the gas injection unit 120. The substrate support unit 130 may include a top plate on which the substrate S is mounted and a shaft 135 for supporting the top plate. Furthermore, the substrate supporter 130 may include a heater 182 for heating the substrate S inside the upper plate.

The shape of the upper plate of the substrate supporter 130 generally corresponds to the shape of the substrate S, but is not limited to this and may be provided in a variety of shapes larger than the substrate S so as to stably seat the substrate S. The shaft 135 may be connected to an external motor (not shown) to enable raising and lowering, and in this case, a bellows pipe (not shown) may be connected to maintain airtightness. Since the substrate support portion 130 is configured to place the substrate S thereon, it may also be called a substrate seating portion, a susceptor, etc.

Furthermore, the substrate support 130 may include an electrostatic electrode 142 to which electrostatic power is applied. The electrostatic electrode 142 may receive electrostatic power, for example, DC power, from a constant power power supply unit (not shown). When electrostatic power is applied to the electrostatic electrode 142, electrostatic force is generated between the electrostatic electrode 142 and the substrate S, so that the substrate S can be fixed to the upper plate of the substrate support 130.

Optionally, the plasma power source 140 may be connected to the gas injection unit 120 to supply radio frequency (RF) power for forming a plasma atmosphere in the reaction space 112 inside the process chamber 110. In this case, the gas injection unit 120 may also be called a power supply electrode or an upper electrode. In some embodiments, the plasma power source 140 may include a high frequency (HF) power source and/or a low frequency (LF) power source. For example, the high frequency (HF) power source may be an RF power source with a frequency range from 5 MHz to 60 MHz, optionally from 13.56 MHz to 27.12 MHz. The low frequency (LF) power source may be an RF power source with a frequency range of 100 kHz to 5 MHz, optionally 300 kHz to 600 kHz.

Additionally, the impedance matching unit 146 may be disposed between the plasma power supply unit 140 and the gas injection unit 120 for impedance matching. The RF power supplied from the plasma power supply unit 140 must be properly impedance matched between the plasma power supply unit 140 and the process chamber 110 through the impedance matching unit 146 to ensure that the RF power is not reflected back from the process chamber 110 and is used in the process. It can be effectively delivered to the chamber 110.

The impedance matching unit 146 may be composed of a series or parallel combination of two or more selected from the group of resistors, inductors, and capacitors. Furthermore, the impedance matching unit 146 may adopt at least one variable capacitor or capacitor array switching structure so that the impedance value can be varied according to the frequency of RF power and process conditions.

The control unit 190 may control the operation of some or all components of the substrate processing apparatus 100. For example, the control unit 190 may control the substrate supporter 130 to control seating and chucking of the substrate S, and may control the gas injection unit 120 to heat the substrate S. In some embodiments, the controller 190 may control the substrate supporter 130 and the gas injection unit 120 so that heating of the substrate S begins at least while the substrate S is chucking.

More specifically, when seating and chucking the substrate S, the control unit 190 maintains the reaction space 112 in a vacuum state and seats the substrate S on the substrate support 130 in the process chamber 110. The substrate support unit 130 can be controlled to chucking the substrate S to the substrate support unit 130 by applying electrostatic power to the electrostatic electrode 142 while doing so. Furthermore, when heating the substrate S, the control unit 190 maintains the reaction space 112 in a vacuum state and supplies heating gas into the reaction space 112 while the substrate supporter 130 is heated to heat the substrate S ) can be controlled to heat the gas injection unit 120.

The substrate processing device 100 may be used as a chemical vapor deposition (CVD) device or a plasma enhanced chemical vapor deposition (PECVD) device.

Hereinafter, a substrate processing method according to embodiments of the present invention will be described with reference to the substrate processing apparatus 100. The substrate processing method below is described with reference to the substrate processing apparatus 100 for convenience of explanation, but the scope is not limited to the substrate processing apparatus 100.

Figure 2 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

Referring to FIGS. 1 and 2 , the substrate processing method includes a step of chucking the substrate S on the substrate support 130 while seating the substrate S on the substrate support 130 (S10), and a reaction space 112 ) may include a step (S20) of heating the substrate (S) by supplying heating gas into the inside. Furthermore, in some embodiments, the substrate processing method may further include supplying a purge gas into the reaction space 112 (S30) after heating the substrate S (S20).

More specifically, the step (S10) of chucking the substrate S is performed by maintaining the reaction space 112 in a vacuum state and seating the substrate S on the substrate support 130 in the process chamber 110 while maintaining the electrostatic electrode. This can be performed by applying electrostatic power to 142 and chucking the substrate S on the substrate support 130. Furthermore, in the step of heating the substrate S (S20), the reaction space 112 is maintained in a vacuum state and heating gas is supplied into the reaction space 112 while the substrate support 130 is heated to heat the substrate S. It can be performed to heat.

In some embodiments, the step S20 of heating the substrate S may be performed by supplying a large amount of heating gas onto the substrate S without increasing the pressure within the process chamber 110. This heating gas can transfer heat from the substrate support 130 to the substrate S under a vacuum atmosphere, thereby heating the substrate S. Accordingly, the heating gas may include a gas with a large heat capacity among inert gases, and may include, for example, nitrogen (N2) gas with a relatively large heat capacity compared to argon (Ar). For example, the heating gas may be supplied at a high flow rate for heat transfer between the substrate support 130 and the substrate S, and the flow rate may be significantly higher than the flow rate of purge gas for purging the typical process chamber 110. can be supplied.

Therefore, since the step (S20) of heating the substrate (S) does not require an increase in pressure within the process chamber (110), the step (S20) of heating the substrate (S) is performed under vacuum to prevent slip of the substrate (S). Like the step (S10) of chucking the substrate (S) that requires state, it can be performed in a vacuum state. Accordingly, in order to reduce the overall pre-process time required for chucking and heating the substrate S, the step S20 of heating the substrate S may be performed at least during the step S10 of chucking the substrate S. .

Furthermore, in the step S20 of heating the substrate S and the step S10 of chucking the substrate S, in order to increase the heating efficiency of the substrate S, only the heating gas is used in the reaction space 112 without a separate purge gas. It can be supplied internally. For example, during these steps S10 and S20, only nitrogen (N2) gas may be supplied onto the substrate S as a heating gas.

In some embodiments, the step S10 of chucking the substrate S may include forming a plasma atmosphere in the reaction space 112 by applying RF power to the gas injection unit 120. Under this plasma atmosphere, electric charge is supplied between the substrate S and the substrate support 130, so that the electrostatic chucking efficiency of the substrate S may be increased. In this case, in the step of heating the substrate S (S20), the heating gas may be continuously supplied even during the step of forming a plasma atmosphere.

In some embodiments, the step of supplying the purge gas (S30) may be performed by supplying the purge gas into the reaction space 112 through the gas injection unit 120. For example, the purge gas may include an inert gas, such as argon (Ar) gas. The purge gas may be supplied at an appropriate flow rate within the necessary limit to control the atmosphere within the process chamber 110. For example, the flow rate of the purge gas in this step (S30) may be less than the flow rate of the heating gas in the step (S20) of heating the substrate (S). More specifically, if the purge gas is at a level of several thousand sccm in this step (S30), the flow rate of the heating gas in the step of heating the substrate S (S20) may be at the level of tens of thousands of sccm.

Furthermore, in the step of supplying the purge gas (S30), the heating gas may be supplied together with the purge gas in order to additionally heat the substrate S. In this case, the sum of the flow rates of the purge gas and the heating gas in this step (S30) may be less than the flow rate of the heating gas in the step (S20) of heating the substrate (S). Accordingly, the degree of heating of the substrate S in the step of supplying the purge gas (S30) may be relatively smaller than that of the step of heating the substrate S (S20).

Furthermore, in the step of supplying the purge gas (S30), for additional heating of the substrate (S), the pressure within the process chamber 110 is increased in the step of heating the substrate (S20) and chucking the substrate (S). It may be greater than the pressure within the process chamber 110 in step S10. For example, in the step S10 of chucking the substrate S and the step S20 of heating the substrate S, the throttle valve 117 is opened to the maximum to prevent slip of the substrate S, and the process chamber In the step (S30) of maintaining (110) in a vacuum atmosphere and supplying purge gas, the throttle valve (117) may be kept in a partially closed state. For example, in the purge gas supply step (S30), the throttle valve 117 may be maintained open at about 10 to 30%.

Meanwhile, after the purge gas supply step (S30), a thin film deposition process on the substrate S may be performed. For example, a process gas may be supplied to the gas injection unit 120 and RF power may be applied to the gas injection unit 120 to form a thin film on the substrate S.

As shown in FIG. 3 , in another embodiment, the step S20 of heating the substrate S and the step S10 of chucking the substrate S may be started or performed simultaneously. According to this, heating of the substrate S can be started at the same time as the substrate S is seated without having to wait until chucking of the substrate S is completed, thereby significantly reducing the time before deposition on the substrate S. . Additionally, the step S20 of heating the substrate S may be completed simultaneously with the step S10 of chucking the substrate S, or may continue until after the step S10 of chucking the substrate S.

Hereinafter, process control conditions in the substrate processing apparatus 100 and the substrate processing method using the same will be described in more detail.

4 and 5 are time charts showing process control over time in a substrate processing method according to some embodiments of the present invention.

Referring to FIG. 4 , in this embodiment, the step S10 of chucking the substrate S and the step S20 of heating the substrate S may be performed simultaneously. Accordingly, during these steps S10 and S20, electrostatic power DC1 may be applied to the electrostatic electrode 142 for chucking the substrate S. For example, the electrostatic power DC1 may gradually increase during the steps S10 and S20, and may be maintained at the electrostatic power DC2 during the purge gas supply step S30.

Heating gas is supplied at a first heating flow rate (HG1) for main heating during the step (S10) of chucking the substrate (S) and the step (S20) of heating the substrate (S), and the step of supplying purge gas (S30) ) may be supplied at a second heating flow rate (HG2) for additional heating. For example, the first heating flow rate (HG1) may be greater than the second heating flow rate (HG2). The purge gas may be supplied at a purge flow rate (PG2) during the purge gas supply step (S30).

The purge gas is not supplied separately during the step of chucking the substrate (S) (S10) and the step of heating the substrate (S20), and is supplied at a purge flow rate (PG2) during the step of supplying the purge gas (S30). You can. Therefore, only the heating gas at the first heating flow rate HG1 is supplied during the step S10 of chucking the substrate S and the step S20 of heating the substrate S, and during the step S30 of supplying the purge gas. Heating gas at a second heating flow rate (HG2) and purge gas at a purge flow rate (PG2) may be supplied.

The pressure within the process chamber 110 is maintained at the first pressure (P1) during the step of chucking the substrate (S) (S10) and the step of heating the substrate (S20), and the step of supplying a purge gas (S30) ) may be maintained at a second pressure (P2) that is higher than the first pressure (P1). For example, the first pressure (P1) refers to the pressure within the process chamber 110 when the throttle valve 117 is fully open, and the second pressure (P2) refers to the pressure in the process chamber 110 when the throttle valve 117 is fully open. ) may refer to the pressure within the process chamber 110 while maintaining it in a partially closed state.

Referring to FIG. 5, in this embodiment, the step S10 of chucking the substrate S is a section in which RF power RF1 is applied to the gas injection unit 120 to form a plasma atmosphere in the process chamber 110. may include. In this section, the RF power RF1 may be gradually increased or increased in steps. For example, after the electrostatic power DC1 is ramped to the maximum, the RF power RF1 may be applied to the gas injection unit 120. This plasma atmosphere can help chucking the substrate S to the substrate support 130 through charge supply.

In a variation of this embodiment, electrostatic power DC1 may continue to increase while RF power RF1 is applied.

4 and 5, the application of electrostatic power DC1 for chucking the substrate S and the supply of heating gas at a first heating flow rate HG1 for heating the substrate S are shown to start simultaneously. . However, in a modified example of these embodiments, the application of electrostatic power DC1 for chucking the substrate S and the supply of heating gas at the first heating flow rate HG1 for heating the substrate S start simultaneously. Alternatively, application of electrostatic power DC1 may begin first, followed by supply of heating gas before the ramping ends.

Hereinafter, the temperature change of the substrate S in the substrate processing method according to the comparative examples and examples will be described. In the substrate processing method according to the comparative example, the substrate S is first churned on the substrate supporter 130, and then the pressure within the process chamber 110 is increased to heat the substrate S.

Figure 6 is a graph showing the change in temperature of the thermostatic chuck over time in the pre-deposition stage in the substrate processing method according to the comparative example and the embodiment of the present invention. In FIG. 6 , the constant temperature chuck may refer to a state in which the substrate support 130 is maintained at a predetermined temperature in the substrate processing apparatus 100.

Referring to FIG. 6, in the case of the comparative example, it can be seen that the temperature of the constant-temperature chuck partially decreases when chucking the substrate S, and that the temperature of the constant-temperature chuck decreases significantly and is maintained when the substrate S is heated. A decrease in the temperature of the thermostatic chuck may indirectly mean that heat is transferred from the thermostatic chuck to the substrate S, thereby heating the substrate S.

In the case of the embodiment, during the chucking and heating steps (S10 and S20) of the substrate (S), the temperature of the constant-temperature chuck rapidly decreases so that the substrate (S) is heated quickly, and then, in the purge step (S30), the temperature of the constant temperature chuck decreases rapidly. It can be seen that the temperature of the chuck increases and the substrate S is not additionally heated. Therefore, it can be seen that if chucking and heating of the substrate S are carried out simultaneously as in the example, the time required for the pre-deposition step can be greatly reduced compared to the comparative example. This can lead to a reduction in overall process time.

Referring to FIG. 7, it can be seen that there is no significant difference in the temperature of the thermostatic chuck in the deposition step in the case of the comparative example and the example. Therefore, it can be seen that although the chucking and heating time of the substrate S in the pre-deposition stage is greatly reduced depending on the embodiment, there is no significant difference in temperature control of the substrate S in the deposition process.

According to the above-described substrate processing apparatus 100 and substrate processing method, since supply of heating gas is used instead of increasing the pressure in the process chamber 110 when heating the substrate S, during seating/chucking of the substrate S Since the substrate S can be heated, the pretreatment time before deposition of the substrate S can be reduced, and thus the substrate processing time can be reduced to improve productivity.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

100: substrate processing device
110: Process chamber
120: gas injection unit
130: substrate support
140: Plasma power unit
190: Control unit

Claims (10)

A process chamber having a reaction space formed therein, a substrate supporter coupled to the process chamber to support a substrate and including an electrostatic electrode, and a gas injection installed in the process chamber opposite the substrate supporter to supply process gas to the reaction space. A substrate processing method using a substrate processing device including a unit,
maintaining the reaction space in a vacuum state, seating the substrate on the substrate supporter, and applying electrostatic power to the electrostatic electrode to chucking the substrate on the substrate supporter; and
Maintaining the reaction space in a vacuum state, and heating the substrate by supplying heating gas into the reaction space through the gas injection unit while the substrate supporter is heated,
Heating the substrate is performed at least during the step of chucking the substrate,
Substrate processing method. According to claim 1,
A method of processing a substrate, wherein the step of heating the substrate and the step of chucking the substrate begin simultaneously. According to claim 1,
After heating the substrate, supplying a purge gas into the reaction space through the gas injection unit,
The flow rate of the purge gas is less than the flow rate of the heating gas in the heating step,
Substrate processing method. According to claim 3,
In the step of supplying the purge gas, the heating gas is supplied together with the purge gas to additionally heat the substrate,
In the step of supplying the purge gas, the sum of the flow rates of the purge gas and the heating gas is less than the flow rate of the heating gas in the step of heating the substrate.
Substrate processing method. According to claim 3,
A substrate processing method, wherein the pressure within the process chamber in the step of supplying the purge gas is greater than the pressure within the process chamber in the steps of heating the substrate and chucking the substrate. According to claim 3,
The process chamber is pumped by a vacuum pump connected through an exhaust pipe,
A throttle valve for controlling the opening rate is connected to the exhaust pipe,
In the step of heating the substrate and the step of chucking the substrate, the throttle valve is opened to the maximum,
In the step of supplying the purge gas, the throttle valve is partially closed,
Substrate processing method. According to claim 3,
The heating gas includes nitrogen (N2) gas,
Substrate processing method. According to claim 3,
The purge gas includes argon (Ar) gas,
Substrate processing method. According to claim 1,
In the step of heating the substrate and the step of chucking the substrate, only the heating gas is supplied into the reaction space without a separate purge gas,
Substrate processing method. According to claim 1,
Chucking the substrate includes applying RF power to the gas injection unit to form a plasma atmosphere in the reaction space,
In the step of heating the substrate, the heating gas is also supplied during the step of forming the plasma atmosphere.
Substrate processing method.