KR20230161002A - Device for inspecting and method for inspecting of display device using thereof - Google Patents

Abstract

An inspection device according to an embodiment includes a stage on which a substrate is mounted, an image acquisition unit that captures an image of the substrate, a control unit that controls the operation of the image acquisition unit, and image data obtained through an image obtained from the image acquisition unit as reference. It includes an image processing unit that compares image data to determine defects, wherein the image acquisition unit includes a camera that captures an image of the substrate, a filter unit that blocks light in some wavelength bands incident on the camera, and a visible light on the substrate. It may include a first light irradiation unit that irradiates light in a light wavelength band, and a second light irradiation unit that irradiates light in an ultraviolet wavelength band to the substrate.

Description

Inspection device and inspection method of display device using the same {DEVICE FOR INSPECTING AND METHOD FOR INSPECTING OF DISPLAY DEVICE USING THEREOF}

The present invention relates to an inspection device and a method of inspecting a display device using the same.

The importance of display devices is increasing with the development of multimedia. In response to this, various types of display devices such as Organic Light Emitting Display (OLED) and Liquid Crystal Display (LCD) are being used.

A display device that displays images includes a display panel such as an organic light emitting display panel or a liquid crystal display panel. Among them, the light emitting display panel may include a light emitting device, for example, in the case of a light emitting diode (LED), an organic light emitting diode (OLED) that uses an organic material as a light emitting material, and an organic light emitting diode (OLED) that uses an inorganic material as a light emitting material. Inorganic light emitting diodes, etc.

The problem to be solved by the present invention is to provide an inspection device that can easily detect foreign substances and defects in a display device by preventing the light emitting element from being recognized as a foreign object, and a method of inspecting the display device using the same.

The problems of the present invention are not limited to the problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

An inspection device according to an embodiment for solving the above problem includes a stage on which a substrate is mounted, an image acquisition unit for capturing an image of the substrate, a control unit for controlling the operation of the image acquisition unit, and an image obtained from the image acquisition unit. An image processing unit that determines defects by comparing image data obtained through standard image data, wherein the image acquisition unit includes a camera that captures an image of the substrate, and a filter that blocks light in a certain wavelength band incident on the camera. It may include a first light irradiation unit that irradiates light in a visible light wavelength band to the substrate, and a second light irradiation unit that irradiates light in an ultraviolet wavelength band to the substrate.

The second light irradiation unit may irradiate light in a wavelength range of 280 nm to 400 nm.

The second light irradiation unit may irradiate light in a wavelength range of 280 nm to 315 nm.

The first light irradiation unit may be a bright field light source and the second light irradiation unit may be a dark field light source.

The intensity of light emitted from the first light irradiation unit may be more than 100 times greater than the intensity of light emitted from the second light irradiation unit.

The first light irradiation unit and the second light irradiation unit may be bright field light sources.

The filter unit may block light in the ultraviolet wavelength band and transmit light in the visible light wavelength band.

The image acquisition unit may include a body unit, and the camera, the filter unit, the first light irradiation unit, and the second light irradiation unit may be coupled to the body unit.

The filter unit may be stored in the body part, and the first light irradiation unit and the second light irradiation unit may be disposed outside the body part.

It may further include an output unit that receives defect inspection results from the image processing unit and displays them.

In addition, a method for inspecting a display device according to an embodiment includes the steps of placing a target substrate on which light-emitting elements are formed on a stage and aligning an image acquisition unit on the target substrate, and acquiring a first image by imaging the target substrate. , irradiating ultraviolet rays to the target substrate to cause the light emitting elements formed on the target substrate to emit light, acquiring a second image by imaging the target substrate, and extracting location data of the light emitting elements from the second image. It may include the steps of excluding the positions of the light emitting elements from the first image and comparing them with a reference image to determine effective defects, and outputting inspection result information.

In the step of acquiring the first image, the first light irradiation unit of the image acquisition unit irradiates light in the visible light wavelength band to the target substrate according to a signal from the control unit, and uses the camera of the image acquisition unit to capture the target substrate. You can take pictures.

The image acquisition unit may acquire the first image by capturing light on the target substrate in units of preset imaging areas.

After acquiring the first image, the first light irradiation unit may stop irradiating light in the visible light wavelength band.

The step of emitting light from the light emitting devices formed on the target substrate includes irradiating light in an ultraviolet wavelength band to the target substrate from a second light irradiation unit of the image acquisition unit according to a signal from the control unit, and radiating light in the ultraviolet wavelength band to the target substrate. Light-emitting elements may emit light.

The light in the ultraviolet wavelength band may be light in the 280nm to 400nm wavelength band.

Light emitted from the light-emitting elements is incident into the image acquisition unit, and light in the ultraviolet wavelength band may be blocked and light in the visible light wavelength band may be transmitted in the filter unit provided in the image acquisition unit.

The step of extracting the position data of the light emitting elements from the second image is performed by using the difference between each gray value constituting the image data from the second image and the surrounding gray values in the image processing unit connected to the image acquisition unit. The luminance characteristic value of the position corresponding to the value can be used.

The step of excluding the positions of the light-emitting elements from the first image and comparing them with a reference image to determine effective defects includes excluding the position data of the light-emitting elements from the first image data in the image processor to exclude the light-emitting elements. image data can be created.

Data on similarity can be extracted between pre-stored reference image data and image data excluding the light-emitting elements, and if the similarity is less than a certain similarity, it can be determined to be a valid defect.

Specific details of other embodiments are included in the detailed description and drawings.

According to the inspection device according to the embodiments and the inspection method of the display device using the same, light in the ultraviolet wavelength band is irradiated to make the light-emitting elements emit light, and the positions of the emitted light-emitting elements are excluded to determine effective defects, so that the light-emitting elements are defective. By preventing detection, actual foreign substances or defects can be detected.

Effects according to the embodiments are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 is a schematic plan view of a display device according to an exemplary embodiment.
FIG. 2 is a plan view showing the arrangement of a plurality of wires included in a display device according to an exemplary embodiment.
Figure 3 is an equivalent circuit diagram of one sub-pixel according to an embodiment.
Figure 4 is a top view showing one pixel of a display device according to an embodiment.
Figure 5 is a cross-sectional view taken along line E1-E1' in Figure 4.
Figure 6 is a cross-sectional view taken along line E2-E2' in Figure 4.
Figure 7 is a schematic diagram of a light-emitting device according to one embodiment.
Figure 8 is a block diagram schematically showing an inspection device according to an embodiment.
Figure 9 is a cross-sectional view schematically showing an image acquisition unit of an inspection device according to an embodiment.
10 is a flowchart showing a method for inspecting a display device according to an embodiment.
FIG. 11 is a diagram schematically showing a method for inspecting a display device according to an embodiment.
FIG. 12 is a plan view schematically showing an imaging area unit of a display device according to an embodiment.
FIG. 13 is a plan view schematically showing light emitting elements emitting light in an imaging area unit of a display device according to an embodiment.
Figure 14 is a plan view showing inspection results of a display device according to an embodiment.
Figure 15 is a plan view showing the arrangement of foreign matter in a sub-pixel of a display device according to an embodiment.
Figure 16 is a diagram schematically showing an image acquisition unit of an inspection device according to another embodiment.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

When an element or layer is referred to as “on” another element or layer, it includes instances where the element or layer is directly on top of or intervening with the other element. Like reference numerals refer to like elements throughout the specification. The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments are illustrative and the present invention is not limited to the details shown.

Although first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be a second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment can be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, specific embodiments will be described with reference to the attached drawings.

1 is a schematic plan view of a display device according to an exemplary embodiment.

Referring to FIG. 1, the display device 10 displays moving images or still images. The display device 10 may refer to any electronic device that provides a display screen. For example, televisions, laptops, monitors, billboards, Internet of Things, mobile phones, smart phones, tablet PCs (personal computers), electronic watches, smart watches, watch phones, head-mounted displays, mobile communication terminals, etc. that provide display screens. The display device 10 may include an electronic notebook, an e-book, a Portable Multimedia Player (PMP), a navigation device, a game console, a digital camera, a camcorder, etc.

The display device 10 includes a display panel that provides a display screen. Examples of display panels include inorganic light emitting diode display panels, organic light emitting display panels, quantum dot light emitting display panels, plasma display panels, and field emission display panels. Below, an inorganic light emitting diode display panel is used as an example of a display panel, but it is not limited thereto, and the same technical idea can be applied to other display panels as well.

The shape of the display device 10 may be modified in various ways. For example, the display device 10 may have a shape such as a horizontally long rectangle, a vertically long rectangle, a square, a square with rounded corners (vertices), another polygon, or a circle. The shape of the display area DPA of the display device 10 may also be similar to the overall shape of the display device 10. In FIG. 1 , a display device 10 having a long rectangular shape in the second direction DR2 is illustrated.

The display device 10 may include a display area (DPA) and a non-display area (NDA). The display area (DPA) is an area where the screen can be displayed, and the non-display area (NDA) is an area where the screen is not displayed. The display area (DPA) may be referred to as an active area, and the non-display area (NDA) may also be referred to as an inactive area. The display area DPA may generally occupy the center of the display device 10.

The display area DPA may include a plurality of pixels PX. A plurality of pixels (PX) may be arranged in a matrix direction. The shape of each pixel PX may be a rectangle or square in plan, but is not limited thereto and may be a diamond shape with each side inclined in one direction. Each pixel (PX) may be arranged in a stripe type or an island type. Additionally, each of the pixels PX may display a specific color by including one or more light-emitting elements that emit light in a specific wavelength range.

A non-display area (NDA) may be placed around the display area (DPA). The non-display area (NDA) may completely or partially surround the display area (DPA). The display area DPA has a rectangular shape, and the non-display area NDA may be arranged adjacent to four sides of the display area DPA. The non-display area NDA may form the bezel of the display device 10. In each non-display area NDA, wires or circuit drivers included in the display device 10 may be disposed, or external devices may be mounted.

FIG. 2 is a plan view showing the arrangement of a plurality of wires included in a display device according to an exemplary embodiment.

Referring to FIG. 2 , the display device 10 may include a plurality of wires. The display device 10 includes a plurality of scan lines (SL) (SL1, SL2, SL3), a plurality of data lines (DTL) (DTL1, DTL2, DTL3), an initialization voltage line (VIL), and a plurality of voltage lines (VL). VL1, VL2, VL3, VL4) may be included. Although not shown in the drawing, the display device 10 may further include other wires.

The first scan line SL1 and the second scan line SL2 may be arranged to extend in the first direction DR1. The first scan line (SL1) and the second scan line (SL2) are arranged adjacent to each other, and are oriented in the second direction (DR2) with the other first scan line (SL1) and the second scan line (SL2). Can be placed spaced apart. The first scan line SL1 and the second scan line SL2 may be connected to a scan wiring pad WPD_SC connected to a scan driver (not shown). The first scan line SL1 and the second scan line SL2 may be arranged to extend from the pad area PDA disposed in the non-display area NDA to the display area DPA.

The third scan line SL3 may be arranged to extend in the second direction DR2 and may be arranged to be spaced apart from the other third scan line SL3 in the first direction DR1. One third scan line SL3 may be connected to one or more first scan lines SL1 or one or more second scan lines SL2. In one embodiment, the first scan line SL1 and the second scan line SL2 may be made of a conductive layer disposed on a different layer from the third scan line SL3. The plurality of scan lines SL may have a mesh structure on the entire display area DPA, but is not limited thereto.

Meanwhile, in this specification, the meaning of 'connection' may mean not only that one member is connected to another member through mutual physical contact, but also that it is connected through the other member. Additionally, it can be understood as one integrated member, where one part and another part are interconnected due to the integrated member. Furthermore, the connection between one member and another member can be interpreted to include not only direct contact but also electrical connection through the other member.

The data lines DTL may be arranged to extend in the first direction DR1. The data line (DTL) includes a first data line (DTL1), a second data line (DTL2), and a third data line (DTL3), and one of the first to third data lines (DTL1, DTL2, and DTL3) is They form a pair and are placed adjacent to each other. Each of the data lines DTL1, DTL2, and DTL3 may be arranged to extend from the pad area PDA disposed in the non-display area NDA to the display area DPA. However, the present invention is not limited thereto, and the plurality of data lines DTL may be disposed at equal intervals between the first voltage line VL1 and the second voltage line VL2, which will be described later.

The initialization voltage line VIL may be arranged to extend in the first direction DR1. The initialization voltage line (VIL) may be disposed between the data lines (DTL) and the first and second scan lines (SL1) and SL2. The initialization voltage line (VIL) may be arranged to extend from the pad area (PDA) disposed in the non-display area (NDA) to the display area (DPA).

The first voltage line (VL1) and the second voltage line (VL2) are arranged to extend in the first direction (DR1), and the third voltage line (VL3) and the fourth voltage line (VL4) are disposed in the second direction (DR2) It is extended and placed as. The first voltage line (VL1) and the second voltage line (VL2) are alternately arranged in the second direction (DR2), and the third voltage line (VL3) and the fourth voltage line (VL4) are arranged alternately in the first direction (DR1). ) can be arranged alternately. The first voltage line (VL1) and the second voltage line (VL2) extend in the first direction (DR1) and are arranged to cross the display area (DPA), and the third voltage line (VL3) and the fourth voltage line ( In VL4), some of the wires may be arranged in the display area DPA and other wires may be arranged in the non-display area NDA located on both sides of the first direction DR1 of the display area DPA. The first voltage line (VL1) and the second voltage line (VL2) may be made of a conductive layer disposed on a different layer from the third voltage line (VL3) and the fourth voltage line (VL4). The first voltage line (VL1) is connected to at least one third voltage line (VL3), the second voltage line (VL2) is connected to at least one fourth voltage line (VL4), and a plurality of voltage lines (VL) ) may have a mesh structure on the front of the display area (DPA). However, it is not limited to this.

The first scan line (SL1), the second scan line (SL2), the data line (DTL), the initialization voltage line (VIL), the first voltage line (VL1), and the second voltage line (VL2) are at least one wiring pad. (WPD) can be electrically connected. Each wiring pad (WPD) may be placed in the non-display area (NDA). In one embodiment, each wiring pad WPD may be disposed in the lower pad area PDA on the other side of the display area DPA in the first direction DR1. The first scan line (SL1) and the second scan line (SL2) are connected to the scan wiring pad (WPD_SC) disposed in the pad area (PDA), and the plurality of data lines (DTL) are each different from the data wiring pad (WPD_DT). ) is connected to. It is connected to the initialization wiring pad (WPD_Vint) of the initialization voltage line (VIL), the first voltage line (VL1) is the first voltage line pad (WPD_VL1), and the second voltage line (VL2) is the second voltage line pad (WPD_VL2) ) is connected to. An external device may be mounted on the wiring pad (WPD). External devices can be mounted on the wiring pad (WPD) through an anisotropic conductive film, ultrasonic bonding, etc. In the drawing, it is illustrated that each wiring pad WPD is disposed in the pad area PDA located below the display area DPA, but the present invention is not limited thereto. Some of the plurality of wiring pads (WPD) may be disposed on either the upper side or the left and right sides of the display area (DPA).

Each pixel (PX) or sub-pixel (SPXn, n is an integer from 1 to 3) of the display device 10 includes a pixel driving circuit. The above-mentioned wires may apply a driving signal to each pixel driving circuit while passing through or around each pixel (PX). The pixel driving circuit may include a transistor and a capacitor. The number of transistors and capacitors in each pixel driving circuit can be varied. According to one embodiment, each sub-pixel SPXn of the display device 10 may have a 3T1C structure in which the pixel driving circuit includes three transistors and one capacitor. Hereinafter, the pixel driving circuit will be described using the 3T1C structure as an example, but the pixel driving circuit is not limited thereto, and various other modified structures such as the 2T1C structure, 7T1C structure, and 6T1C structure may be applied.

Figure 3 is an equivalent circuit diagram of one sub-pixel according to an embodiment.

Referring to FIG. 3, each sub-pixel (SPXn) of the display device 10 according to one embodiment includes, in addition to a light emitting diode (EL), three transistors (T1, T2, T3) and one storage capacitor (Cst). Includes.

The light emitting diode (EL) emits light according to the current supplied through the first transistor (T1). A light emitting diode (EL) includes a first electrode, a second electrode, and at least one light emitting element disposed between them. The light emitting device can emit light in a specific wavelength range by electrical signals transmitted from the first electrode and the second electrode.

One end of the light emitting diode (EL) is connected to the source electrode of the first transistor (T1), and the other end is connected to a low potential voltage (hereinafter, first power voltage) lower than the high potential voltage (hereinafter, first power voltage) of the first voltage line (VL1). Hereinafter, it may be connected to a second voltage line (VL2) to which a second power supply voltage is supplied.

The first transistor T1 adjusts the current flowing from the first voltage line VL1 to which the first power voltage is supplied to the light emitting diode EL according to the voltage difference between the gate electrode and the source electrode. For example, the first transistor T1 may be a driving transistor for driving the light emitting diode EL. The gate electrode of the first transistor T1 is connected to the source electrode of the second transistor T2, the source electrode is connected to the first electrode of the light emitting diode EL, and the drain electrode is connected to the first electrode to which the first power voltage is applied. 1 Can be connected to the voltage wire (VL1).

The second transistor T2 is turned on by the scan signal of the first scan line SL1 and connects the data line DTL to the gate electrode of the first transistor T1. The gate electrode of the second transistor T2 may be connected to the first scan line SL1, the source electrode may be connected to the gate electrode of the first transistor T1, and the drain electrode may be connected to the data line DTL.

The third transistor T3 is turned on by the scan signal of the second scan line SL2 and connects the initialization voltage line VIL to one end of the light emitting diode EL. The gate electrode of the third transistor T3 is connected to the second scan line SL2, the drain electrode is connected to the initialization voltage line VIL, and the source electrode is connected to one end of the light emitting diode EL or the first transistor ( It can be connected to the source electrode of T1).

In one embodiment, the source electrode and drain electrode of each transistor T1, T2, and T3 are not limited to the above, and vice versa. Additionally, each of the transistors T1, T2, and T3 may be formed as a thin film transistor. In addition, in FIG. 3, the description focuses on the fact that each transistor (T1, T2, T3) is formed of an N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but is not limited thereto. That is, each transistor T1, T2, and T3 may be formed as a P-type MOSFET, or some may be formed as an N-type MOSFET, and others may be formed as a P-type MOSFET.

The storage capacitor Cst is formed between the gate electrode and the source electrode of the first transistor T1. The storage capacitor Cst stores the difference voltage between the gate voltage and the source voltage of the first transistor T1.

Hereinafter, the structure of one pixel PX of the display device 10 according to an embodiment will be described in detail with further reference to other drawings.

Figure 4 is a top view showing one pixel of a display device according to an embodiment. 4 shows electrodes (RME; RME1, RME2), bank patterns (BP1, BP2), a bank layer (BNL), and a plurality of light emitting elements (ED) disposed in one pixel (PX) of the display device 10. and the planar arrangement of connection electrodes (CNE; CNE1, CNE2).

Referring to FIG. 4 , each pixel PX of the display device 10 may include a plurality of sub-pixels SPXn. For example, one pixel (PX) may include a first sub-pixel (SPX1), a second sub-pixel (SPX2), and a third sub-pixel (SPX3). The first sub-pixel (SPX1) emits light of the first color, the second sub-pixel (SPX2) emits light of the second color, and the third sub-pixel (SPX3) emits light of the third color. You can. For example, the first color may be blue, the second color may be green, and the third color may be red. However, the present invention is not limited to this, and each sub-pixel (SPXn) may emit light of the same color. In one embodiment, each sub-pixel (SPXn) may emit blue light. In the drawing, one pixel (PX) includes three sub-pixels (SPXn), but the present invention is not limited thereto, and the pixel (PX) may include a larger number of sub-pixels (SPXn).

Each sub-pixel SPXn of the display device 10 may include an emission area (EMA) and a non-emission area. The light emitting area (EMA) may be an area where the light emitting element (ED) is placed and light of a specific wavelength range is emitted. The non-emission area may be an area in which the light emitting device ED is not disposed and the light emitted from the light emitting device ED does not reach and is not emitted.

The light-emitting area EMA may include an area where the light-emitting element ED is disposed and an area adjacent to the light-emitting element ED, where light emitted from the light-emitting element ED is emitted. For example, the light emitting area EMA may also include an area where light emitted from the light emitting element ED is reflected or refracted by another member. A plurality of light emitting elements ED are disposed in each sub-pixel SPXn, and may form a light emitting area including an area where the light emitting elements ED are arranged and an area adjacent thereto.

In the drawing, it is illustrated that the emission areas (EMA) of each sub-pixel (SPXn) have uniform areas, but the present invention is not limited thereto. In some embodiments, each light emitting area (EMA) of each sub-pixel (SPXn) may have different areas depending on the color or wavelength of light emitted from the light emitting element (ED) disposed in the corresponding sub-pixel.

Each sub-pixel SPXn may further include a sub-area SA disposed in a non-emission area. The sub-area SA of the corresponding sub-pixel SPXn may be disposed on the lower side of the light-emitting area EMA in the first direction DR1. The emission areas EMA and sub-areas SA are alternately arranged along the first direction DR1, and between the emission areas EMA of different sub-pixels SPXn spaced apart in the first direction DR1. A sub-area (SA) may be arranged. For example, the light-emitting area (EMA) and the sub-area (SA) are alternately arranged in the first direction (DR1), and the light-emitting area (EMA) and the sub-area (SA) are each arranged repeatedly in the second direction (DR2). It can be. However, the present invention is not limited thereto, and the emission areas EMA and sub-areas SA in the plurality of pixels PX may have an arrangement different from that of FIG. 4 .

Since the light emitting element ED is not disposed in the sub area SA, light is not emitted, but a portion of the electrode RME disposed in each sub pixel SPXn may be disposed. The electrodes RME disposed in different sub-pixels SPXn may be separated from each other in the separation portion ROP of the sub-area SA.

Wires and circuit elements of the circuit layer disposed in each pixel PX and connected to the light emitting element ED may be connected to the first to third sub-pixels SPX1, SPX2, and SPX3, respectively. However, the wires and circuit elements are not arranged to correspond to the area occupied by each sub-pixel (SPXn) or the light-emitting area (EMA), but are arranged regardless of the position of the light-emitting area (EMA) within one pixel (PX). It can be.

The bank layer (BNL) may be arranged to surround the plurality of sub-pixels (SPXn), the emission area (EMA), and the sub-area (SA). The bank layer BNL may be disposed at the boundary of adjacent sub-pixels SPXn in the first direction DR1 and the second direction DR2, and may also be disposed at the boundary between the emission area EMA and the sub-area SA. You can. The sub-pixels (SPXn), the emission area (EMA), and the sub-area (SA) of the display device 10 may be areas divided by the arrangement of the bank layer (BNL). The spacing between the plurality of sub-pixels (SPXn), the emission areas (EMA), and the sub-areas (SA) may vary depending on the width of the bank layer (BNL).

The bank layer BNL may be arranged in a grid-like pattern on the entire surface of the display area DPA, including portions extending in the first and second directions DR1 and DR2 on a planar surface. The bank layer (BNL) is disposed across the boundary of each sub-pixel (SPXn) to distinguish neighboring sub-pixels (SPXn). Additionally, the bank layer (BNL) is arranged to surround the light emitting area (EMA) and the sub area (SA) arranged for each sub-pixel (SPXn) to distinguish them.

Figure 5 is a cross-sectional view taken along line E1-E1' in Figure 4. Figure 6 is a cross-sectional view taken along line E2-E2' in Figure 4. FIG. 5 shows a cross section across both ends of the light emitting element (ED) disposed in the first sub-pixel (SPX1) and the electrode contact holes (CTD, CTS), and FIG. 6 shows a cross section in the first sub-pixel (SPXn). It shows a cross section crossing both ends of the arranged light emitting element (ED) and the contact portions (CT1 and CT2).

Referring to FIGS. 5 and 6 in conjunction with FIG. 4 , the display device 10 includes a wiring substrate including a first substrate SUB, a semiconductor layer disposed thereon, a plurality of conductive layers, and a plurality of insulating layers. It may include (101). Additionally, the display device 10 may include a plurality of electrodes (RME) (RME1, RME2), a light emitting element (ED), and connection electrodes (CNE (CNE1, CNE2)) disposed on the wiring board 101. The semiconductor layer, conductive layer, and insulating layer of the wiring board 101 may each constitute a circuit layer of the display device 10.

The first substrate SUB may be an insulating substrate. The first substrate (SUB) may be made of an insulating material such as glass, quartz, or polymer resin. Additionally, the first substrate SUB may be a rigid substrate, but may also be a flexible substrate capable of bending, folding, rolling, etc. The first substrate (SUB) includes a display area (DPA) and a non-display area (NDA) surrounding the display area (DPA), and the display area (DPA) includes an emission area (EMA) and a sub-area (SA) that is part of the non-emission area. can do.

The first conductive layer may be disposed on the first substrate SUB. The first conductive layer includes a lower metal layer (BML), and the lower metal layer (BML) is disposed to overlap the active layer (ACT1) of the first transistor (T1). The lower metal layer (BML) prevents light from being incident on the first active layer (ACT1) of the first transistor, or is electrically connected to the first active layer (ACT1) to stabilize the electrical characteristics of the first transistor (T1). It can perform its function. However, the lower metal layer (BML) may be omitted.

The buffer layer BL may be disposed on the lower metal layer BML and the first substrate SUB. The buffer layer BL is formed on the first substrate SUB to protect the transistors of the pixel PX from moisture penetrating through the first substrate SUB, which is vulnerable to moisture penetration, and may perform a surface planarization function.

The semiconductor layer is disposed on the buffer layer BL. The semiconductor layer may include a first active layer (ACT1) of the first transistor (T1) and a second active layer (ACT2) of the second transistor (T2). The first active layer (ACT1) and the second active layer (ACT2) may be arranged to partially overlap the first gate electrode (G1) and the second gate electrode (G2) of the second conductive layer, which will be described later.

The semiconductor layer may include polycrystalline silicon, single crystalline silicon, oxide semiconductor, etc. In other embodiments, the semiconductor layer may include polycrystalline silicon. The oxide semiconductor may be an oxide semiconductor containing indium (In). For example, the oxide semiconductor includes indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), and indium zinc tin oxide (Indium Zinc Tin Oxide). , IZTO), Indium Gallium Tin Oxide (IGTO), Indium Gallium Zinc Oxide (IGZO), and Indium Gallium Zinc Tin Oxide (IGZTO). .

The drawing illustrates that one first transistor T1 is disposed in the sub-pixel SPXn of the display device 10, but the display device 10 is not limited thereto and may include a larger number of transistors. .

The first gate insulating layer GI is disposed on the semiconductor layer and the buffer layer BL in the display area DPA. The first gate insulating layer GI may not be disposed in the pad area PDA. It can serve as a gate insulating film for each transistor (T1, T2). In the drawing, it is illustrated that the first gate insulating layer (GI) is entirely disposed on the buffer layer (BL), but the present invention is not limited thereto. In some embodiments, the first gate insulating layer (GI) is patterned together with the gate electrodes (G1, G2) of the second conductive layer, which will be described later, between the second conductive layer and the active layers (ACT1, ACT2) of the semiconductor layer. It may also be partially deployed.

The second conductive layer is disposed on the first gate insulating layer (GI). The second conductive layer may include the first gate electrode G1 of the first transistor T1 and the second gate electrode G2 of the second transistor T2. The first gate electrode G1 is disposed to overlap the channel region of the first active layer ACT1 in the third direction DR3, which is the thickness direction, and the second gate electrode G2 is disposed to overlap the channel region of the first active layer ACT1. It may be arranged to overlap the channel region in the third direction DR3, which is the thickness direction. Although not shown in the drawing, the second conductive layer may further include one electrode of a storage capacitor.

The first interlayer insulating layer IL1 is disposed on the second conductive layer. The first interlayer insulating layer IL1 may function as an insulating film between the second conductive layer and other layers disposed on the second conductive layer and protect the second conductive layer.

The third conductive layer is disposed on the first interlayer insulating layer IL1. The third conductive layer includes the first voltage line (VL1) and the second voltage line (VL2) and the first conductive pattern (CDP1) disposed in the display area (DPA), and the source electrode ( S1, S2) and drain electrodes (D1, D2). Although not shown in the drawing, the third conductive layer may further include another electrode of the storage capacitor.

The first voltage line VL1 is applied with a high potential voltage (or first power voltage) transmitted to the first electrode RME1, and the second voltage line VL2 is applied with a low potential voltage transmitted to the second electrode RME2. A potential voltage (or a second power supply voltage) may be applied. A portion of the first voltage line (VL1) contacts the first active layer (ACT1) of the first transistor (T1) through a contact hole penetrating the first interlayer insulating layer (IL1) and the first gate insulating layer (GI). can do. The first voltage line VL1 may serve as the first drain electrode D1 of the first transistor T1. The second voltage line VL2 may be directly connected to the second electrode RME2, which will be described later.

The first conductive pattern (CDP1) may be in contact with the first active layer (ACT1) of the first transistor (T1) through a contact hole penetrating the first interlayer insulating layer (IL1) and the first gate insulating layer (GI). there is. The first conductive pattern CDP1 may contact the lower metal layer BML through another contact hole. The first conductive pattern CDP1 may serve as the first source electrode S1 of the first transistor T1. Additionally, the first conductive pattern CDP1 may be connected to the first electrode RME1 or the first connection electrode CNE1, which will be described later. The first transistor T1 may transmit the first power voltage applied from the first voltage line VL1 to the first electrode RME1 or the first connection electrode CNE1.

The second source electrode (S2) and the second drain electrode (D2) are connected to the second transistor (T2) through contact holes penetrating the first interlayer insulating layer (IL1) and the first gate insulating layer (GI), respectively. It can contact the active layer (ACT2). The second transistor T2 may be any one of the switching transistors described above with reference to FIG. 3 . The second transistor T2 transmits the signal applied from the data line DTL of FIG. 3 to the first transistor T1, or transmits the signal applied from the initialization voltage line VIL of FIG. 3 to the other electrode of the storage capacitor. It can be delivered.

The first protective layer PV1 is disposed on the third conductive layer. The first protective layer PV1 may function as an insulating film between other layers of the third conductive layer and protect the third conductive layer.

The above-described buffer layer (BL), first gate insulating layer (GI), first interlayer insulating layer (IL1), and first protective layer (PV1) may be formed of a plurality of inorganic layers alternately stacked. For example, the buffer layer (BL), the first gate insulating layer (GI), the first interlayer insulating layer (IL1), and the first protective layer (PV1) are made of silicon oxide (SiO _x ), silicon nitride (Silicon It may be formed as _a double layer _in which inorganic layers containing at least one of nitride _, SiN However, it is not limited thereto, and the buffer layer (BL), the first gate insulating layer (GI), the first interlayer insulating layer (IL1), and the first protective layer (PV1) are formed as one inorganic layer including the above-described insulating material. It may come true. Additionally, in some embodiments, the first interlayer insulating layer IL1 may be made of an organic insulating material such as polyimide (PI).

The via layer VIA is disposed on the third conductive layer in the display area DPA. The via layer (VIA) may include an organic insulating material, such as polyimide (PI), and may compensate for steps caused by lower conductive layers and form a flat upper surface. However, in some embodiments, the via layer (VIA) may be omitted.

The display device 10 is a display element layer disposed on a via layer (VIA) of the wiring board 101, and includes bank patterns BP1 and BP2, a plurality of electrodes RME (RME1, RME2), and a bank layer ( BNL), a plurality of light emitting elements (ED) and a plurality of connection electrodes (CNE; CNE1, CNE2). Additionally, the display device 10 may include a plurality of insulating layers (PAS1, PAS2, and PAS3) disposed on the wiring board 101.

A plurality of bank patterns BP1 and BP2 may be arranged in the emission area EMA of each sub-pixel SPXn. The bank patterns BP1 and BP2 may have a predetermined width in the second direction DR2 and may have a shape extending in the first direction DR1.

For example, the bank patterns BP1 and BP2 are a first bank pattern BP1 and a second bank pattern (BP1) spaced apart from each other in the second direction DR2 within the emission area EMA of each sub-pixel SPXn. BP2) may be included. The first bank pattern BP1 is disposed on the left side in the second direction DR2 from the center of the light emitting area EMA, and the second bank patterns BP2 are spaced apart from the first bank pattern BP1 to form the light emitting area. It may be placed on the right side, the other side of the second direction DR2, from the center of (EMA). The first bank pattern BP1 and the second bank pattern BP2 are alternately arranged along the second direction DR2 and may be arranged in an island-shaped pattern in the display area DPA. A plurality of light emitting elements ED may be disposed between the first bank pattern BP1 and the second bank pattern BP2.

The first bank pattern BP1 and the second bank pattern BP2 have the same length in the first direction DR1, but are longer than the length in the first direction DR1 of the light emitting area EMA surrounded by the bank layer BNL. It can be small. The first bank pattern BP1 and the second bank pattern BP2 may be spaced apart from a portion of the bank layer BNL extending in the second direction DR2. However, the present invention is not limited thereto, and the bank patterns BP1 and BP2 may be integrated with the bank layer BNL or may partially overlap with a portion of the bank layer BNL extending in the second direction DR2. In this case, the length of the bank patterns BP1 and BP2 in the first direction DR1 may be equal to or greater than the length of the light emitting area EMA surrounded by the bank layer BNL in the first direction DR1.

The first bank pattern BP1 and the second bank pattern BP2 may have the same width in the second direction DR2. However, it is not limited to this, and they may have different widths. For example, one bank pattern may have a larger width than another bank pattern, and the bank pattern with a larger width may be arranged across the emission areas EMA of other sub-pixels SPXn adjacent in the second direction DR2. You can. In this case, as for the bank pattern disposed across the plurality of light emitting areas EMA, the portion of the bank layer BNL extending in the first direction DR1 may overlap the second bank pattern BP2 in the thickness direction. In the drawing, two bank patterns BP1 and BP2 are arranged with the same width for each sub-pixel SPXn, but the present invention is not limited thereto. The number and shape of the bank patterns BP1 and BP2 may vary depending on the number or arrangement structure of the electrodes RME.

A plurality of bank patterns BP1 and BP2 may be disposed on the via layer VIA. For example, the bank patterns BP1 and BP2 may be placed directly on the via layer VIA, and may have a structure where at least a portion of the bank patterns protrude relative to the top surface of the via layer VIA. The protruding portions of the bank patterns BP1 and BP2 may have inclined or curved sides, and the light emitted from the light emitting element ED is reflected from the electrodes RME disposed on the bank patterns BP1 and BP2. It may be emitted toward the top of the via layer (VIA). Unlike illustrated in the drawings, the bank patterns BP1 and BP2 may have a semicircle or semiellipse shape with a curved outer surface in a cross-sectional view. The bank patterns BP1 and BP2 may include, but are not limited to, an organic insulating material such as polyimide (PI).

A plurality of electrodes (RME) (RME1, RME2) are disposed in each sub-pixel (SPXn) in a shape extending in one direction. The plurality of electrodes RME1 and RME2 may extend in the first direction DR1 and be disposed in the emission area EMA and sub-area SA of the sub-pixel SPXn, and may be aligned with each other in the second direction DR2. Can be placed spaced apart. The plurality of electrodes (RME) may be electrically connected to the light-emitting element (ED), which will be described later, but are not limited to this and may not be electrically connected to the light-emitting element (ED).

The display device 10 may include a first electrode (RME1) and a second electrode (RME2) disposed in each sub-pixel (SPXn). The first electrode (RME1) is disposed to the left of the center of the light emitting area (EMA), and the second electrode (RME2) is spaced apart from the first electrode (RME1) in the second direction (DR2) and is located at the center of the light emitting area (EMA). is placed on the right. The first electrode RME1 may be disposed on the first bank pattern BP1, and the second electrode RME2 may be disposed on the second bank pattern BP2. The first electrode RME1 and the second electrode RME2 may be partially disposed in the corresponding sub-pixel SPXn and sub-area SA beyond the bank layer BNL. The first electrode (RME1) and the second electrode (RME2) of different sub-pixels (SPXn) may be spaced apart from each other based on the separation portion (ROP) located in the sub-area (SA) of one sub-pixel (SPXn). .

In the drawing, it is illustrated that two electrodes RME for each sub-pixel SPXn have a shape extending in the first direction DR1, but the present invention is not limited thereto. The electrodes (RME) may be disposed, or the electrodes (RME) may be partially bent and have a shape with a different width depending on the location.

The first electrode RME1 and the second electrode RME2 may be disposed at least on the inclined side of the bank patterns BP1 and BP2. In one embodiment, the width measured in the second direction DR2 of the plurality of electrodes RME may be smaller than the width measured in the second direction DR2 of the bank patterns BP1 and BP2, and the first electrode The distance between the RME1) and the second electrode RME2 in the second direction DR2 may be narrower than the distance between the bank patterns BP1 and BP2. At least a portion of the first electrode RME1 and the second electrode RME2 may be disposed directly on the via layer VIA, so that they may be disposed on the same plane.

The light emitting element (ED) disposed between the bank patterns (BP1, BP2) emits light in both end directions, and the emitted light may be directed to the electrode (RME) disposed on the bank patterns (BP1, BP2). there is. The portion of each electrode RME disposed on the bank patterns BP1 and BP2 may have a structure capable of reflecting light emitted from the light emitting device ED. The first electrode RME1 and the second electrode RME2 are disposed to cover at least one side of the bank patterns BP1 and BP2 and can reflect light emitted from the light emitting device ED.

Each electrode (RME) may directly contact the third conductive layer through electrode contact holes (CTD, CTS) in a portion overlapping with the bank layer (BNL) between the light emitting area (EMA) and the sub-area (SA). The first electrode contact hole (CTD) is formed in the area where the bank layer (BNL) and the first electrode (RME1) overlap, and the second electrode contact hole (CTS) is formed between the bank layer (BNL) and the second electrode (RME2). It can be formed in this overlapping area. The first electrode RME1 may contact the first conductive pattern CDP1 through the first electrode contact hole CTD penetrating the via layer VIA and the first protective layer PV1. The second electrode RME2 may contact the second voltage line VL2 through the second electrode contact hole CTS penetrating the via layer VIA and the first protective layer PV1. The first electrode (RME1) is electrically connected to the first transistor (T1) through the first conductive pattern (CDP1) to apply the first power voltage, and the second electrode (RME2) is connected to the second voltage line (VL2) and It may be electrically connected and a second power voltage may be applied. However, it is not limited to this. In another embodiment, each electrode (RME1, RME2) may not be electrically connected to the voltage wires (VL1, VL2) of the third conductive layer, and the connection electrode (CNE), which will be described later, may be directly connected to the third conductive layer. there is.

The plurality of electrodes (RME) may include a highly reflective conductive material. For example, the electrodes (RME) contain metals such as silver (Ag), copper (Cu), aluminum (Al), or alloys containing aluminum (Al), nickel (Ni), lanthanum (La), etc. Alternatively, it may have a structure in which metal layers such as titanium (Ti), molybdenum (Mo), and niobium (Nb) and the alloy are laminated. In some embodiments, the electrodes (RME) are a double layer or multilayer in which an alloy containing aluminum (Al) and at least one metal layer made of titanium (Ti), molybdenum (Mo), and niobium (Nb) are stacked. It can be done.

Without being limited thereto, each electrode (RME) may further include a transparent conductive material. For example, each electrode (RME) may include materials such as ITO, IZO, ITZO, etc. In some embodiments, each electrode (RME) may have a structure in which one or more layers of a transparent conductive material and a highly reflective metal layer are stacked, or may be formed as a single layer including them. For example, each electrode (RME) may have a stacked structure of ITO/Ag/ITO, ITO/Ag/IZO, or ITO/Ag/ITZO/IZO. The electrodes (RME) are electrically connected to the light emitting device (ED) and may reflect some of the light emitted from the light emitting device (ED) toward the top of the first substrate (SUB).

The first insulating layer PAS1 is disposed on the entire surface of the display area DPA and may be disposed on the via layer VIA and the plurality of electrodes RME. The first insulating layer (PAS1) can protect the plurality of electrodes (RME) and at the same time insulate the different electrodes (RME) from each other. In particular, the first insulating layer PAS1 is disposed to cover the electrodes RME before the bank layer BNL is formed, so that the electrodes RME are formed in the process of forming the bank layer BNL. It can prevent damage. Additionally, the first insulating layer PAS1 may prevent the light emitting element ED disposed thereon from being damaged by direct contact with other members.

In an exemplary embodiment, a step may be formed between the electrodes RME spaced apart in the second direction DR2 so that a portion of the upper surface of the first insulating layer PAS1 is depressed. The light-emitting device ED may be disposed on the stepped upper surface of the first insulating layer PAS1, and a space may be formed between the light-emitting device ED and the first insulating layer PAS1.

The bank layer (BNL) may be disposed on the first insulating layer (PAS1). The bank layer (BNL) includes a portion extending in the first direction (DR1) and the second direction (DR2) and may surround each sub-pixel (SPXn). The bank layer (BNL) surrounds and can distinguish the emission area (EMA) and sub-area (SA) of each sub-pixel (SPXn), and surrounds the outermost part of the display area (DPA) and has a ratio compared to the display area (DPA). The display area (NDA) can be distinguished. The bank layer (BNL) is disposed entirely in the display area (DPA) to form a grid-like pattern, and the areas opened by the bank layer (BNL) in the display area (DPA) are the emission area (EMA) and the sub-area (SA). It can be.

The bank layer (BNL) may have a certain height similar to the bank patterns (BP1 and BP2). In some embodiments, the height of the upper surface of the bank layer BNL may be higher than that of the bank patterns BP1 and BP2, and its thickness may be the same as or greater than the bank patterns BP1 and BP2. The bank layer (BNL) can prevent ink from overflowing into the adjacent sub-pixel (SPXn) during the inkjet printing process during the manufacturing process of the display device 10. The bank layer BNL may include an organic insulating material such as polyimide, in the same way as the bank patterns BP1 and BP2.

A plurality of light emitting elements (ED) may be disposed in the light emitting area (EMA). The light emitting elements ED are disposed between the bank patterns BP1 and BP2 and may be arranged to be spaced apart from each other in the first direction DR1. In one embodiment, the plurality of light emitting elements ED may have a shape extending in one direction, and both ends may be disposed on different electrodes RME. The length of the light emitting element ED may be longer than the gap between the electrodes RME spaced apart in the second direction DR2. The light emitting elements ED may be generally arranged in an extending direction perpendicular to the first direction DR1 in which the electrodes RME extend. However, the present invention is not limited thereto, and the extending direction of the light emitting device ED may be arranged to face the second direction DR2 or a direction obliquely inclined thereto.

A plurality of light emitting devices (ED) may be disposed on the first insulating layer (PAS1). The light emitting device ED has a shape that extends in one direction, and may be arranged such that one extended direction is parallel to the top surface of the first substrate SUB. As will be described later, the light emitting device ED may include a plurality of semiconductor layers disposed along one extended direction, and the plurality of semiconductor layers are arranged along a direction parallel to the upper surface of the first substrate SUB. Can be placed sequentially. However, the present invention is not limited thereto, and when the light emitting device ED has a different structure, a plurality of semiconductor layers may be disposed in a direction perpendicular to the first substrate SUB.

The light emitting elements (ED) disposed in each sub-pixel (SPXn) may emit light of different wavelengths depending on the material of the semiconductor layer described above. However, the present invention is not limited thereto, and the light emitting elements ED disposed in each sub-pixel SPXn may include semiconductor layers made of the same material and emit light of the same color.

The light emitting elements (ED) may be electrically connected to the conductive layers below the electrode (RME) and the via layer (VIA) by contacting the connecting electrodes (CNE: CNE1, CNE2), and an electrical signal is applied to emit light in a specific wavelength range. can emit.

The second insulating layer PAS2 may be disposed on the plurality of light emitting devices ED, the first insulating layer PAS1, and the bank layer BNL. The second insulating layer PAS2 extends in the first direction DR1 between the bank patterns BP1 and BP2 and includes a pattern portion disposed on the plurality of light emitting elements ED. The pattern portion is arranged to partially cover the outer surface of the light emitting device ED, and may not cover both sides or both ends of the light emitting device ED. The pattern unit may form a linear or island-shaped pattern within each sub-pixel (SPXn) in a plan view. The pattern portion of the second insulating layer PAS2 may protect the light emitting elements ED and simultaneously fix the light emitting elements ED during the manufacturing process of the display device 10 . Additionally, the second insulating layer PAS2 may be arranged to fill the space between the light emitting device ED and the second insulating layer PAS2 below it. Additionally, a portion of the second insulating layer PAS2 may be disposed on the bank layer BNL and in the sub-areas SA.

A plurality of connection electrodes (CNE) (CNE1, CNE2) may be disposed on a plurality of electrodes (RME) and bank patterns (BP1, BP2). The plurality of connection electrodes (CNE) each have a shape extending in one direction and may be arranged to be spaced apart from each other. Each connection electrode (CNE) contacts the light emitting element (ED) and may be electrically connected to the third conductive layer.

The plurality of connection electrodes CNE may include a first connection electrode CNE1 and a second connection electrode CNE2 disposed in each sub-pixel SPXn. The first connection electrode CNE1 may have a shape extending in the first direction DR1 and may be disposed on the first electrode RME1 or the first bank pattern BP1. The first connection electrode (CNE1) partially overlaps the first electrode (RME1) and may be disposed from the light emitting area (EMA) beyond the bank layer (BNL) to the sub-area (SA). The second connection electrode CNE2 has a shape extending in the first direction DR1 and may be disposed on the second electrode RME2 or the second bank pattern BP2. The second connection electrode (CNE2) partially overlaps the second electrode (RME2) and may be disposed from the light emitting area (EMA) beyond the bank layer (BNL) to the sub-area (SA). The first connection electrode (CNE1) and the second connection electrode (CNE2) each contact the light emitting elements (ED) and may be electrically connected to the electrodes (RME) or the conductive layer below them.

For example, the first connection electrode (CNE1) and the second connection electrode (CNE2) are each disposed on the side of the second insulating layer (PAS2) and may contact the light emitting elements (ED). The first connection electrode CNE1 partially overlaps the first electrode RME1 and may contact one end of the light emitting elements ED. The second connection electrode CNE2 may partially overlap the second electrode RME2 and contact the other end of the light emitting elements ED. A plurality of connection electrodes (CNE) are disposed across the light emitting area (EMA) and the sub-area (SA). The connection electrodes CNE may be in contact with the light-emitting elements ED at a portion disposed in the light-emitting area EMA, and may be electrically connected to the third conductive layer at a portion disposed in the sub-area SA.

According to one embodiment, the display device 10 may contact the electrode RME through the contact portions CT1 and CT2 where each connection electrode CNE is disposed in the sub-area SA. The first connection electrode (CNE1) connects the sub-area (SA) through the first contact portion (CT1) penetrating the first insulating layer (PAS1), the second insulating layer (PAS2), and the third insulating layer (PAS3). 1 can be in contact with the electrode (RME1). The second connection electrode CNE2 is in contact with the second electrode RME2 through the second contact part CT2 penetrating the first insulating layer PAS1 and the second insulating layer PAS2 in the sub-area SA. You can. Each connection electrode (CNE) may be electrically connected to the third conductive layer through each electrode (RME). The first connection electrode (CNE1) is electrically connected to the first transistor (T1) to apply the first power voltage, and the second connection electrode (CNE2) is electrically connected to the second voltage line (VL2) to apply the second power supply. Voltage may be applied. Each connection electrode (CNE) may contact the light emitting element (ED) in the light emitting area (EMA) and transmit the power voltage to the light emitting element (ED).

However, it is not limited to this. In some embodiments, the plurality of connection electrodes (CNE) may be in direct contact with the third conductive layer, and may be electrically connected to the third conductive layer through patterns other than the electrode (RME).

Connecting electrodes (CNE) may include conductive material. For example, it may include ITO, IZO, ITZO, aluminum (Al), etc. For example, the connection electrode (CNE) includes a transparent conductive material, and light emitted from the light emitting device (ED) may be emitted by passing through the connection electrode (CNE).

The third insulating layer (PAS3) is disposed on the second connection electrode (CNE2) and the second insulating layer (PAS2). The third insulating layer (PAS3) is entirely disposed on the second insulating layer (PAS2) to cover the second connection electrode (CNE2), and the first connection electrode (CNE1) is disposed on the third insulating layer (PAS3). can be placed in The third insulating layer PAS3 may be entirely disposed on the via layer VIA except for the area where the second connection electrode CNE2 is disposed. The third insulating layer (PAS3) may insulate the first connection electrode (CNE1) from the second connection electrode (CNE2) so that the first connection electrode (CNE1) does not directly contact the second connection electrode (CNE2).

Although not shown in the drawing, another insulating layer may be further disposed on the third insulating layer (PAS3) and the first connection electrode (CNE1). The insulating layer may function to protect members disposed on the first substrate SUB from the external environment.

The above-described first insulating layer (PAS1), second insulating layer (PAS2), and third insulating layer (PAS3) may each include an inorganic insulating material or an organic insulating material. For example, the first insulating layer (PAS1), the second insulating layer (PAS2), and the third insulating layer (PAS3) each include an inorganic insulating material, or the first insulating layer (PAS1) and the third insulating layer (PAS3) It may include an inorganic insulating material, but the second insulating layer (PAS2) may include an organic insulating material. The first insulating layer (PAS1), the second insulating layer (PAS2), and the third insulating layer (PAS3) may each be formed, or at least one layer may be formed in a structure in which a plurality of insulating layers are alternately or repeatedly stacked. In an exemplary embodiment, the first insulating layer (PAS1), the second insulating layer (PAS2), and the third insulating layer (PAS3) are silicon oxide (SiO _x ), silicon nitride (SiN _x ), and silicon oxynitride, respectively. It may be any one of (SiO _x N _y ). The first insulating layer (PAS1), the second insulating layer (PAS2), and the third insulating layer (PAS3) are made of the same material, or are partly made of the same material and partly different materials, or are each made of different materials. It may be done with

Figure 7 is a schematic diagram of a light-emitting device according to one embodiment.

Referring to FIG. 7, the light emitting device (ED) may be a light emitting diode. Specifically, the light emitting device (ED) has a size ranging from nanometers to micrometers. It may be an inorganic light emitting diode made of inorganic material. The light emitting element (ED) can be aligned between two opposing electrodes, where polarity is formed when an electric field is generated between the two electrodes in a specific direction.

The light emitting device ED according to one embodiment may have a shape extending in one direction. The light emitting device (ED) may have a shape such as a cylinder, rod, wire, or tube. However, the shape of the light emitting device (ED) is not limited to this, and may have the shape of a polygonal pillar such as a cube, a rectangular parallelepiped, or a hexagonal column, or a light emitting device (ED) that extends in one direction but has a partially inclined outer surface. ED) can take various forms.

The light emitting device ED may include a semiconductor layer doped with a dopant of any conductive type (eg, p-type or n-type). The semiconductor layer can emit light in a specific wavelength range by transmitting an electrical signal applied from an external power source. The light emitting device ED may include a first semiconductor layer 31, a second semiconductor layer 32, a light emitting layer 36, an electrode layer 37, and an insulating film 38.

The first semiconductor layer 31 may be an n-type semiconductor. The first semiconductor layer 31 may include a semiconductor material having the chemical formula AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the first semiconductor layer 31 may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with an n-type dopant. The n-type dopant doped in the first semiconductor layer 31 may be Si, Ge, Se, Sn, or the like.

The second semiconductor layer 32 is disposed on the first semiconductor layer 31 with the light emitting layer 36 interposed therebetween. The second semiconductor layer 32 may be a p-type semiconductor, and the second semiconductor layer 32 has AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). It may include a semiconductor material having a chemical formula. For example, the second semiconductor layer 32 may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type dopant. The p-type dopant doped into the second semiconductor layer 32 may be Mg, Zn, Ca, Ba, etc.

Meanwhile, the drawing shows that the first semiconductor layer 31 and the second semiconductor layer 32 are composed of one layer, but the present invention is not limited thereto. Depending on the material of the light emitting layer 36, the first semiconductor layer 31 and the second semiconductor layer 32 may further include a larger number of layers, such as a clad layer or a tensile strain barrier reducing (TSBR) layer. It may be possible. For example, the light emitting device ED may further include another semiconductor layer disposed between the first semiconductor layer 31 and the light emitting layer 36, or between the second semiconductor layer 32 and the light emitting layer 36. . The semiconductor layer disposed between the first semiconductor layer 31 and the light emitting layer 36 may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, InN, and SLs doped with an n-type dopant, and the second semiconductor layer ( The semiconductor layer disposed between 32) and the light emitting layer 36 may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type dopant.

The light emitting layer 36 is disposed between the first semiconductor layer 31 and the second semiconductor layer 32. The light emitting layer 36 may include a material with a single or multiple quantum well structure. If the light emitting layer 36 includes a material with a multiple quantum well structure, it may have a structure in which a plurality of quantum layers and well layers are alternately stacked. The light emitting layer 36 may emit light by combining electron-hole pairs according to an electrical signal applied through the first semiconductor layer 31 and the second semiconductor layer 32. The light-emitting layer 36 may include materials such as AlGaN, AlGaInN, and InGaN. In particular, when the light emitting layer 36 has a multi-quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include materials such as AlGaN or AlGaInN, and the well layers may include materials such as GaN or AlInN.

The light emitting layer 36 may have a structure in which a type of semiconductor material with a large band gap energy and a semiconductor material with a small band gap energy are alternately stacked, and may be made of different group 3 to group 5 materials depending on the wavelength of the emitted light. It may also contain semiconductor materials. The light emitted by the light emitting layer 36 is not limited to light in the blue wavelength range, and in some cases may emit light in the red and green wavelength ranges.

The electrode layer 37 may be an ohmic connection electrode. However, the electrode is not limited to this and may be a Schottky connection electrode. The light emitting device ED may include at least one electrode layer 37. The light emitting device ED may include one or more electrode layers 37, but is not limited to this and the electrode layer 37 may be omitted.

The electrode layer 37 may reduce the resistance between the light emitting element ED and the electrode or connection electrode when the light emitting element ED is electrically connected to the electrode or connection electrode in the display device 10. The electrode layer 37 may include a conductive metal. For example, the electrode layer 37 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), ITO, IZO, and ITZO.

The insulating film 38 is arranged to surround the outer surfaces of the plurality of semiconductor layers and electrode layers described above. For example, the insulating film 38 may be formed to surround at least the outer surface of the light emitting layer 36, but both ends in the longitudinal direction of the light emitting element ED are exposed. Additionally, the insulating film 38 may be formed to have a rounded upper surface in cross-section in an area adjacent to at least one end of the light emitting device ED.

The insulating film 38 is made of materials with insulating properties, for example, silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon oxynitride (SiO _x N _y ), aluminum nitride (AlN _x ), aluminum oxide ( It may include at least one of AlO _x ), zirconium oxide (ZrO _x ), hafnium oxide (HfO _x ), and titanium oxide (TiO _x ). In the drawing, the insulating film 38 is illustrated as being formed as a single layer, but the present invention is not limited thereto. In some embodiments, the insulating film 38 may be formed as a multi-layer structure in which a plurality of layers are stacked.

The insulating film 38 may function to protect the semiconductor layers and electrode layers of the light emitting device ED. The insulating film 38 can prevent an electrical short circuit that may occur in the light emitting layer 36 when it comes into direct contact with an electrode through which an electrical signal is transmitted to the light emitting device ED. Additionally, the insulating film 38 can prevent a decrease in the luminous efficiency of the light emitting device ED.

Additionally, the outer surface of the insulating film 38 may be surface treated. The light emitting element (ED) may be sprayed onto the electrode in a dispersed state in a predetermined ink and aligned. Here, in order to maintain the light emitting element ED in a dispersed state without agglomerating with other adjacent light emitting elements ED in the ink, the surface of the insulating film 38 may be treated to make it hydrophobic or hydrophilic.

The display device 10 described above may undergo an inspection process to inspect each structure, such as conductive layers and light emitting elements, for foreign substances or defects. The inspection process can inspect foreign matter or pattern defects by comparing images measured between processes. Among these, in the case of light-emitting devices, the light-emitting devices are scattered on the substrate, so all of the light-emitting devices are recognized as foreign substances, making it difficult to detect actual foreign substances or defects. To solve this problem, if the inspection process is performed by masking the light-emitting area where the light-emitting elements are formed and its surrounding area, it becomes impossible to detect foreign substances or defects in the light-emitting area and its surrounding area.

Hereinafter, an inspection device and an inspection method of a display device that can detect foreign substances or defects in the area where light emitting devices are formed and the surrounding area are disclosed.

Figure 8 is a block diagram schematically showing an inspection device according to an embodiment. Figure 9 is a cross-sectional view schematically showing an image acquisition unit of an inspection device according to an embodiment.

Referring to FIGS. 8 and 9, the inspection device 100 according to one embodiment is an Automatic Optical Inspection (AOI) device that inspects the location, width, length, etc. of holes, patterns, etc. during the manufacturing process of the display device. can be inspected.

The inspection device 100 includes a stage 110 on which a substrate (or display device) is mounted, an image acquisition unit 120 that captures an image of the substrate, and a control unit 130 that controls the stage 110 and the image acquisition unit 120. ), an image processing unit 140 that inspects and determines the obtained image, and an output unit 150 that outputs the inspection result.

The stage 110 may be supported by seating a substrate or a display device. The stage 110 may be a generally rectangular plate, but its shape is not limited thereto. The stage 110 may be fixed or moved by the control unit 130. For example, the stage 110 may be moved up, down, left, or right according to a control signal from the controller 130.

The image acquisition unit 120 may acquire an image by imaging the substrate mounted on the stage 110. The image acquisition unit 120 may irradiate light to the substrate according to a signal from the control unit 130 and acquire an image from the light reflected from the substrate. For example, when light in the ultraviolet ray (UV) band is irradiated to the substrate, the image acquisition unit 120 can acquire an image of the substrate including light-emitting devices that emit excitation light by light in the ultraviolet band. there is. Similar to the stage 110, the image acquisition unit 120 can move up, down, left, and right according to a signal from the control unit 130. The image acquisition unit 120 may acquire an image of the substrate by scanning the substrate while moving.

The image acquisition unit 120 may include a body unit 121, a camera 122, a filter unit 123, a first light irradiation unit 124, and a second light irradiation unit 125.

The body portion 121 may support the components of the image acquisition unit 120. A camera 122, a filter unit 123, a first light irradiation unit 124, and a second light irradiation unit 125 may be coupled to the body unit 121. The shape of the body portion 121 is not particularly limited and may be cylindrical, square pillar, etc.

The camera 122 may capture light reflected from the substrate to capture an image of the substrate. The camera 122 may capture light reflected from the substrate on which the light-emitting elements are disposed and capture an image of the substrate. The camera 122 may capture light in units of preset imaging areas and capture images for the imaging areas. The camera 122 may be placed on one side of the body portion 121. There may be at least one camera 122, and when there are multiple cameras 122, a certain area of the substrate corresponding to the location where each camera 122 is installed can be imaged on an imaging area basis.

The camera 122 may be a Time Delay Integration (TDI) type CCD (Charge Coupled Device) camera. A time delay integral CCD camera may be composed of a plurality of pixels, and each of the plurality of pixels may output a gray value. The camera 122 is not limited to this and may be an infrared camera or the like.

The filter unit 123 is disposed within the body portion 121 and may be disposed to be spaced apart from the camera 122. The filter unit 123 may be accommodated within the body unit 121. Light reflected from the substrate is incident on the filter unit 123, and light passing through the filter unit 123 may be irradiated by the camera 122. The filter unit 123 may be an ultraviolet ray blocking filter that transmits light in the visible light band and blocks light in the ultraviolet (UV) band. In the filter unit 123, light in the ultraviolet band is blocked and light in the visible band is transmitted, and the transmitted light in the visible band may be incident on the camera 122 and converted into an image.

According to one embodiment, the filter unit 123 radiates light in the ultraviolet band (280 nm to 400 nm wavelength band) emitted from the second light irradiation unit 125 to the substrate, and the light in the ultraviolet band reflected from the substrate is irradiated to the camera 122. ) can be blocked from entering. The filter unit 123 may be coated with a UV blocking material on a transparent substrate. For example, a UV blocking material may be coated on a polyester or polyethylene substrate.

The first light irradiation unit 124 may irradiate light to the substrate. The first light irradiation unit 124 may be disposed on one side of the body 121 and irradiate light toward the substrate. The first light irradiation unit 124 may generate and emit visible ray in a wavelength range of about 400 nm to about 740 nm. Light in the visible light band generated by the first light irradiation unit 124 may be irradiated to a preset imaging area on the substrate. Light irradiated to the substrate may be reflected from the substrate, pass through the filter unit 123, and be incident on the camera 122. Light incident on the camera 122 may be converted into an image of the substrate.

The second light irradiation unit 125 may irradiate light to the substrate. The second light irradiation unit 125 is disposed below the body 121 and may irradiate light toward the substrate. However, the present invention is not limited to this, and the second light irradiation unit 125 may be disposed on one side of the body unit 121 . The second light irradiation unit 125 may generate and emit ultraviolet rays in a wavelength range of about 280 nm to about 400 nm. Light in the ultraviolet wavelength band generated and emitted from the second light irradiation unit 125 may be irradiated to the substrate to cause the light emitting devices to emit light. The light emitting device may emit internally excited fluorescence when irradiated with light in a wavelength band with energy greater than the band gap of the light emitting layer ('36' in FIG. 7). Light emitted from the light emitting device may pass through the filter unit 123 and enter the camera 122.

In one embodiment, the second light irradiation unit 125 may generate ultraviolet B rays in a wavelength band of about 280 nm to about 315 nm and ultraviolet C rays in a wavelength band of about 315 nm to about 400 nm. Preferably, ultraviolet B rays in a wavelength range of 280 nm to about 315 nm may be emitted from the second light irradiation unit 125. When light emitting devices are irradiated with light in a short wavelength band, for example, a wavelength band of about 100 nm to about 280 nm, the light emitting devices may be exposed to excessive energy and be destroyed. Accordingly, the second light irradiation unit 125 may generate and emit ultraviolet rays in a wavelength range of about 280 nm to about 400 nm.

The first light irradiation unit 124 may be a bright field light source, and the second light irradiation unit 125 may be a dark field light source. The intensity of light emitted from the first light irradiation unit 124 may be 10 times or more or 100 times more than the intensity of light emitted from the second light irradiation unit 125.

The control unit 130 may control the movement and operation of the stage 110 and the image acquisition unit 120. The control unit 130 can move the stage 110 and the image acquisition unit 120 up, down, left, and right. For example, when the substrate is placed on the stage 110, the control unit 130 moves the stage 110 and/or the image acquisition unit 120 to align the image acquisition unit 120 on the substrate. Additionally, the control unit 130 may control the operation of the image acquisition unit 120. For example, after the image acquisition unit 120 is aligned on the substrate, the control unit 130 operates the first light irradiation unit 124 and the second light irradiation unit 125 of the image acquisition unit 120 to generate light on the substrate. can be controlled to investigate. Additionally, the control unit 130 may control the camera 122 to acquire an image by capturing the substrate.

The control unit 130 may be hardware such as an Electronic Controller Unit (ECU), a Micro Controller Unit (MCU), or software running on these hardware, or a combination thereof.

The image processing unit 140 may process acquired image data. According to one embodiment, the image processing unit 140 may obtain the luminance characteristic value of each pixel corresponding to each gray value using the difference between each gray value constituting the image data and surrounding gray values. This image processing unit 140 may be implemented as an image processor that preprocesses image data.

In order to check whether there is a defect in the arrangement relationship between patterns and light emitting elements formed on the substrate of the display device, the image processing unit 140 may determine whether there is a defect by comparing the acquired image data with pre-stored reference image data. Specifically, the image processing unit 140 receives images before and after emission of light of the light emitting elements from the image acquisition unit 120, and extracts data for the image before emission and the image after emission. According to this embodiment, after the light-emitting elements emit light, position data of the light-emitting elements can be extracted from image data through luminance data of the light-emitting elements. Through this, the positions of the light-emitting elements are excluded from the image data before the light-emitting elements emit light, thereby generating image data excluding the light-emitting elements. Then, data on the similarity is extracted between the reference image data and the image data excluding the light-emitting elements, and if it is less than a certain similarity, it is judged as a defect.

Light-emitting elements are dispersed in ink and randomly scattered on the substrate, making it difficult to generate reference image data. Accordingly, it is difficult to detect actual foreign substances because all light-emitting elements are detected as foreign substances in an inspection after the light-emitting elements are placed.

The inspection device 100 according to one embodiment acquires a first image by imaging the substrate on which the light-emitting device is formed by irradiating light in the visible light wavelength band to the substrate. Then, light in the ultraviolet wavelength range is irradiated to the substrate to cause the light-emitting elements to emit light, and then a second image is acquired. By determining the positions of the light-emitting elements in the obtained second image and excluding the determined positions from the first image to generate image data and comparing this with the reference image, actual foreign substances or defects can be detected.

The output unit 150 may receive data on defect inspection results for the display device from the image processing unit 140 and display the defect inspection results and inspection status in real time.

Hereinafter, a display device inspection method that can detect foreign substances or defects in the display device will be described with reference to other drawings.

10 is a flowchart showing a method for inspecting a display device according to an embodiment.

Referring to FIG. 10, the inspection method of a display device according to an embodiment includes the steps of seating a target substrate on a stage and aligning an image acquisition unit on the target substrate (S100), and acquiring a first image by imaging the target substrate. Step (S110), irradiating ultraviolet rays to the target substrate to cause the light emitting devices to emit light (S120), acquiring a second image by imaging the target substrate (S130), extracting position data of the light emitting devices from the second image. It may include a step (S140), a step of excluding the positions of light emitting elements from the first image and comparing them with a reference image to determine effective defects (S150), and a step of outputting inspection result information (S160).

A method of inspecting a display device according to an embodiment uses an image acquisition unit 120 including a second light irradiation unit 125 that emits light in an ultraviolet wavelength band to prevent light-emitting elements from being detected as foreign substances, thereby preventing actual foreign substances from being detected. and defects can be detected. Hereinafter, a method for inspecting a display device will be described in detail with reference to other drawings.

FIG. 11 is a diagram schematically showing a method for inspecting a display device according to an embodiment. FIG. 12 is a plan view schematically showing an imaging area unit of a display device according to an embodiment. FIG. 13 is a plan view schematically showing light emitting elements emitting light in an imaging area unit of a display device according to an embodiment. Figure 14 is a plan view showing inspection results of a display device according to an embodiment. Figure 15 is a plan view showing the arrangement of foreign matter in a sub-pixel of a display device according to an embodiment. In the following, a method for inspecting a display device will be described in conjunction with FIG. 10 described above.

Referring to FIG. 11 , first, the target substrate TSUB is placed on the stage 110 and the image acquisition unit 120 is aligned on the target substrate TSUB. (S100)

The target substrate (TSUB) has light-emitting devices ('ED' in FIG. 6) arranged in alignment on a substrate ('SUB' in FIG. 6), and a second insulating layer (FIG. The process of forming 'PAS2' in 6 may have been performed. The image acquisition unit 120 may include a camera 122, a filter unit 123, a first light irradiation unit 124, and a second light irradiation unit 125 coupled to the body unit 121. The image acquisition unit 120 and/or the stage 110 may be aligned on the target substrate TSUB according to a control signal from the control unit ('130 in FIG. 8).

Next, referring to FIG. 12, the first image is obtained by imaging the target substrate (TSUB). (S110)

The image acquisition unit 120 may capture an image of the target substrate TSUB according to a signal from the control unit 130. Specifically, according to a signal from the control unit 130, the first light irradiation unit 124 of the image acquisition unit 120 prepares for imaging by irradiating light in the visible light wavelength band to the target substrate TSUB. Next, the control unit 130 transmits a signal to the camera 122 to image the target substrate TSUB. The camera 122 may capture the light radiated from the first light irradiation unit 124 and reflected from the target substrate TSUB to capture an image of the target substrate TSUB. The camera 122 may capture light in units of preset imaging areas and capture images for the imaging areas. An imaging area unit may include a plurality of pixels, but it should be noted that it is shown as a single pixel for ease of explanation.

As shown in FIG. 12, an imaging area unit may be one pixel (PX). In each sub-pixel (SPXn), a bank layer (BNL) that separates the light-emitting area (EMA) and the sub-area (SA), electrodes (RME1, RME2), and light-emitting elements (ED) are disposed, and although not shown, a light-emitting element ( A second insulating layer (PAS2) is disposed on the EDs. The camera 122 acquires a first image by capturing an image of the target substrate TSUB in units of imaging areas. The acquired first image is transmitted to the image processing unit ('140 in FIG. 8).

Next, referring to FIG. 13, ultraviolet rays are irradiated to the target substrate TSUB to cause the light emitting elements ED to emit light. (S120)

The image acquisition unit 120 may radiate ultraviolet rays onto the target substrate TSUB according to a signal from the control unit 130. Specifically, according to a signal from the control unit 130, the second light irradiation unit 125 of the image acquisition unit 120 prepares for imaging by irradiating light in the ultraviolet wavelength band to the target substrate TSUB. The second light irradiation unit 125 may generate and emit ultraviolet rays in the wavelength band of about 280 nm to about 400 nm among the light in the ultraviolet wavelength band, in order to prevent the light emitting elements (EDs) from being destroyed by light in the short wavelength band. Additionally, the second light irradiation unit 125 may be a dark field light source with a lower light intensity than the first light irradiation unit 124.

When light in the ultraviolet wavelength band is irradiated to the target substrate TSUB, the light emitting elements ED may emit light. The light-emitting devices (EDs) may be irradiated with light in the ultraviolet wavelength band with an energy greater than the bandgap of the light-emitting layer ('36' in FIG. 7), thereby emitting internally excited fluorescence. At this time, the first light irradiation unit 124 is turned off before irradiating light from the second light irradiation unit 125 and stops irradiating light in the visible light wavelength band.

Next, the target substrate (TSUB) is captured to obtain a second image. (S130)

The control unit 130 transmits a signal to the camera 122 to image the target substrate TSUB. The camera 122 may capture an image of the target substrate TSUB by capturing light emitted and reflected from the target substrate TSUB. Specifically, the light emitting elements ED emit light in the visible light wavelength band, and the light emitted from the second light irradiation unit 125 may be reflected on the target substrate TSUB. That is, light in the ultraviolet wavelength band and light in the visible light wavelength band are emitted from the target substrate TSUB to the image acquisition unit 120.

Light in the ultraviolet wavelength band and light in the visible light wavelength band incident on the image acquisition unit 120 are incident on the filter unit ('123' in FIG. 9) through the body unit ('121' in FIG. 9). The filter unit ('123' in FIG. 9) may be an ultraviolet ray blocking filter that transmits light in the visible light wavelength band and blocks light in the ultraviolet (UV) wavelength band. Light in the ultraviolet wavelength band incident on the filter unit ('123' in FIG. 9) is blocked and light in the visible wavelength band is transmitted, and the transmitted light in the visible wavelength band is incident on the camera 122 to produce a second image. can be obtained.

Next, position data of the light emitting elements (ED) is extracted from the second image. (S140)

Images acquired from the image acquisition unit 120 may be transmitted to the image processing unit ('140' in FIG. 8). The image processing unit 140 may use the difference between each gray value constituting the image data from the second image and the surrounding gray values to obtain the luminance characteristic value of the position corresponding to each gray value. Position data of the light emitting elements (EDs) can be extracted using this luminance characteristic value.

Next, the positions of the light emitting elements (ED) are excluded from the first image and compared with the reference image to determine effective defects. (S150)

The image processing unit ('140' in FIG. 8) may determine whether there is a defect by comparing the acquired image data with pre-stored reference image data. Specifically, the image processing unit ('140' in FIG. 8) excludes the position data of the light-emitting devices from the first image data obtained through the first image and generates image data from which the light-emitting devices are excluded. Image data excluding the light-emitting elements may be image data of the entire area excluding the light-emitting elements within the light-emitting area of each sub-pixel. Then, data on the similarity is extracted between the reference image data and the image data excluding the light-emitting elements, and if the similarity is less than a certain similarity, it is judged to be a valid defect.

Next, referring to Figures 14 and 15, test result information is output. (S160)

Valid defects determined by the image processing unit ('140' in FIG. 8) are transmitted to the output unit ('150' in FIG. 8) to output inspection result information.

As described above, the light-emitting elements are randomly scattered on the substrate in a dispersed state in ink, so that all light-emitting elements are detected as foreign substances in subsequent inspection. In an inspection method of a display device according to an embodiment, images before and after emission of light-emitting elements are acquired using a second light irradiator that emits light in an ultraviolet wavelength band, and the positions of the light-emitting elements are determined to determine the area where the light-emitting elements are placed. can be excluded from the image before emission. Therefore, by generating image data excluding light-emitting elements and comparing it with a reference image, actual foreign substances or defects can be detected.

According to this embodiment, as the light emitting elements are excluded, foreign matter disposed between the light emitting elements ED can also be detected as shown in FIG. 15. This has the advantage of being able to inspect approximately 83% of the unit area of the imaging area.

Meanwhile, in the above-described embodiment, a method of inspecting a display device after forming the second insulating layer PAS2 was described. However, it is not limited to this, and the light emitting device (ED) is formed before and after each process of the first connection electrode (CNE1), the third insulating layer (PAS3), and the second connection electrode (CNE2) formed on the second insulating layer (PAS2). ) can be inspected after excluding their locations.

Hereinafter, an inspection device according to another embodiment will be described with reference to other drawings.

Figure 16 is a diagram schematically showing an image acquisition unit of an inspection device according to another embodiment.

Referring to FIG. 16, this embodiment differs from the embodiment of FIG. 9 in that the second light irradiation unit of the image acquisition unit is disposed on the side of the body unit and is a bright field light source. Hereinafter, overlapping explanations will be omitted and the differences will be explained.

The image acquisition unit 220 of the inspection device according to one embodiment includes a camera 222, a filter unit 223, a first light irradiation unit 224, and a second light irradiation unit 225 coupled to the body unit 221. It can be included.

The second light irradiation unit 225 may be disposed on one side of the body unit 221 . For example, the second light irradiation unit 225 may be arranged to be spaced apart from the first light irradiation unit 225 with the body portion 221 interposed therebetween. The second light irradiation unit 125 may generate and emit ultraviolet rays in a wavelength range of about 280 nm to about 400 nm.

According to one embodiment, the second light irradiation unit 225 may be a bright field light source. For example, both the second light irradiation unit 225 and the first light irradiation unit 224 may be bright field light sources. The intensity of light of the second light irradiation unit 225 may be similar or identical to that of the first light irradiation unit 225 . When the second light irradiation unit 225 is a bright field light source, the energy transfer speed may be fast as the intensity of light in the ultraviolet wavelength band irradiated to the light emitting device ED increases. Accordingly, the time required for the light emitting elements (EDs) to emit light can be reduced, thereby improving inspection efficiency.

Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will be able to understand it. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: display device 100: inspection device
110: Stage 120: Image acquisition unit
130: Control unit 140: Image processing unit
150: output unit 121: body unit
122: Camera 123: Filter unit
124: first light irradiation unit 125: second light irradiation unit

Claims (20)

A stage on which a substrate is placed;
An image acquisition unit that captures an image of the substrate;
a control unit that controls the operation of the image acquisition unit; and
An image processing unit that determines defects by comparing image data obtained through the image obtained from the image acquisition unit with reference image data,
The image acquisition unit,
a camera that captures an image of the substrate;
a filter unit that blocks light in some wavelength bands incident on the camera;
a first light irradiation unit that irradiates light in a visible light wavelength band to the substrate; and
An inspection device including a second light irradiation unit that irradiates light in an ultraviolet wavelength band to the substrate. According to claim 1,
The second light irradiation unit is an inspection device that irradiates light in a 280nm to 400nm wavelength band. According to clause 2,
The second light irradiation unit is an inspection device that irradiates light in a wavelength range of 280 nm to 315 nm. According to claim 1,
An inspection device wherein the first light irradiation unit is a bright field light source and the second light irradiation unit is a dark field light source. According to clause 4,
An inspection device in which the intensity of light emitted from the first light irradiation unit is more than 100 times greater than the intensity of light emitted from the second light irradiation unit. According to claim 1,
An inspection device wherein the first light irradiation unit and the second light irradiation unit are bright field light sources. According to claim 1,
The filter unit blocks light in the ultraviolet wavelength band and transmits light in the visible light wavelength band. According to claim 1,
The image acquisition unit includes a body unit, and the camera, the filter unit, the first light irradiation unit, and the second light irradiation unit are coupled to the body unit. According to clause 8,
An inspection device wherein the filter unit is accommodated within the body unit, and the first light irradiation unit and the second light irradiation unit are disposed outside the body unit. According to claim 1,
An inspection device further comprising an output unit that receives defect inspection results from the image processing unit and displays them. Placing a target substrate on which light emitting devices are formed on a stage and aligning an image acquisition unit on the target substrate;
Obtaining a first image by imaging the target substrate;
irradiating ultraviolet rays to the target substrate to cause light emitting devices formed on the target substrate to emit light;
acquiring a second image by imaging the target substrate;
extracting location data of the light emitting elements from the second image;
Excluding the positions of the light emitting elements from the first image and comparing them with a reference image to determine effective defects; and
A method of inspecting a display device including outputting inspection result information. According to claim 11,
The step of acquiring the first image is,
According to a signal from the control unit, the first light irradiation unit of the image acquisition unit irradiates light in the visible light wavelength band to the target substrate,
A method of inspecting a display device in which the target substrate is captured using a camera of the image acquisition unit. According to claim 12,
The image acquisition unit captures light from the target substrate in units of preset imaging areas to obtain the first image. According to claim 12,
A method of inspecting a display device in which, after acquiring the first image, the first light irradiation unit stops irradiating light in the visible light wavelength band. According to claim 11,
The step of emitting light from the light emitting elements formed on the target substrate is,
According to a signal from the control unit, the second light irradiation unit of the image acquisition unit irradiates light in an ultraviolet wavelength band to the target substrate,
A method of inspecting a display device in which the light emitting elements emit light by light in the ultraviolet wavelength band. According to claim 15,
A method of inspecting a display device, wherein the light in the ultraviolet wavelength band is light in the 280nm to 400nm wavelength band. According to claim 15,
The light emitted from the light emitting elements is incident into the image acquisition unit, and the filter unit provided in the image acquisition unit blocks light in the ultraviolet wavelength band and transmits light in the visible light wavelength band. According to claim 11,
The step of extracting location data of the light-emitting elements from the second image includes:
A method of inspecting a display device by using the difference between each gray value constituting image data from the second image and surrounding gray values in an image processing unit connected to the image acquisition unit and using the luminance characteristic value of the position corresponding to each gray value. . According to clause 18,
The step of excluding the positions of the light emitting elements from the first image and comparing them with a reference image to determine a valid defect is,
An inspection method for a display device in which the image processing unit excludes position data of the light-emitting elements from the first image data to generate image data excluding the light-emitting elements. According to clause 19,
An inspection method for a display device that extracts data on similarity between pre-stored reference image data and image data excluding the light-emitting elements, and determines it as a valid defect if the similarity is less than a certain level.

Images