KR20230153659A - Polishing pad with improved performance - Google Patents
Polishing pad with improved performance Download PDFInfo
- Publication number
- KR20230153659A KR20230153659A KR1020220053332A KR20220053332A KR20230153659A KR 20230153659 A KR20230153659 A KR 20230153659A KR 1020220053332 A KR1020220053332 A KR 1020220053332A KR 20220053332 A KR20220053332 A KR 20220053332A KR 20230153659 A KR20230153659 A KR 20230153659A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- diisocyanate
- glycol
- weight
- paragraph
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 44
- -1 isocyanate compound Chemical class 0.000 claims abstract description 42
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000012948 isocyanate Substances 0.000 claims abstract description 22
- 229920005862 polyol Polymers 0.000 claims abstract description 14
- 239000004088 foaming agent Substances 0.000 claims description 27
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 239000000654 additive Substances 0.000 claims description 10
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 9
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 claims description 8
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 7
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 claims description 6
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical group C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 4
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims description 4
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 claims description 4
- PPUHQXZSLCCTAN-UHFFFAOYSA-N 4-[(4-amino-2,3-dichlorophenyl)methyl]-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1Cl PPUHQXZSLCCTAN-UHFFFAOYSA-N 0.000 claims description 4
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004970 Chain extender Substances 0.000 claims description 4
- 239000005057 Hexamethylene diisocyanate Substances 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
- 229940018564 m-phenylenediamine Drugs 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229920000909 polytetrahydrofuran Polymers 0.000 claims description 4
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 claims description 3
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 claims description 3
- KXBFLNPZHXDQLV-UHFFFAOYSA-N [cyclohexyl(diisocyanato)methyl]cyclohexane Chemical compound C1CCCCC1C(N=C=O)(N=C=O)C1CCCCC1 KXBFLNPZHXDQLV-UHFFFAOYSA-N 0.000 claims description 3
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229940083957 1,2-butanediol Drugs 0.000 claims description 2
- 229940043375 1,5-pentanediol Drugs 0.000 claims description 2
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 claims description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 2
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 claims description 2
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 claims description 2
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 claims description 2
- QJENIOQDYXRGLF-UHFFFAOYSA-N 4-[(4-amino-3-ethyl-5-methylphenyl)methyl]-2-ethyl-6-methylaniline Chemical compound CC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(C)C=2)=C1 QJENIOQDYXRGLF-UHFFFAOYSA-N 0.000 claims description 2
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005058 Isophorone diisocyanate Substances 0.000 claims description 2
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 claims description 2
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 claims description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 claims description 2
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000005442 diisocyanate group Chemical group 0.000 claims description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 claims description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 claims description 2
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 claims description 2
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 claims description 2
- YZZTZUHVGICSCS-UHFFFAOYSA-N n-butan-2-yl-4-[[4-(butan-2-ylamino)phenyl]methyl]aniline Chemical compound C1=CC(NC(C)CC)=CC=C1CC1=CC=C(NC(C)CC)C=C1 YZZTZUHVGICSCS-UHFFFAOYSA-N 0.000 claims description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 2
- 229920001610 polycaprolactone Polymers 0.000 claims description 2
- 239000004632 polycaprolactone Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 150000003077 polyols Chemical class 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229960004063 propylene glycol Drugs 0.000 claims description 2
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 claims 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 230000007547 defect Effects 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- 238000009835 boiling Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 9
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- BJZYYSAMLOBSDY-QMMMGPOBSA-N (2s)-2-butoxybutan-1-ol Chemical compound CCCCO[C@@H](CC)CO BJZYYSAMLOBSDY-QMMMGPOBSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- PQMAKJUXOOVROI-UHFFFAOYSA-N 2,2,3,3,5,5,6,6-octafluoro-4-(trifluoromethyl)morpholine Chemical compound FC(F)(F)N1C(F)(F)C(F)(F)OC(F)(F)C1(F)F PQMAKJUXOOVROI-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HYTRYEXINDDXJK-UHFFFAOYSA-N Ethyl isopropyl ketone Chemical compound CCC(=O)C(C)C HYTRYEXINDDXJK-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 description 2
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PSJKAILWKIKKNU-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluoro-n-(1,1,2,2,3,3,4,4,4-nonafluorobutyl)-n-(trifluoromethyl)butan-1-amine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F PSJKAILWKIKKNU-UHFFFAOYSA-N 0.000 description 1
- BJBXQQZMELYVMD-UHFFFAOYSA-N 2,2,3,3,4,5,5,6,6-nonafluoromorpholine Chemical class FN1C(F)(F)C(F)(F)OC(F)(F)C1(F)F BJBXQQZMELYVMD-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- 239000004604 Blowing Agent Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- DXVYLFHTJZWTRF-UHFFFAOYSA-N ethyl iso-butyl ketone Natural products CCC(=O)CC(C)C DXVYLFHTJZWTRF-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- RMLFHPWPTXWZNJ-UHFFFAOYSA-N novec 1230 Chemical compound FC(F)(F)C(F)(F)C(=O)C(F)(C(F)(F)F)C(F)(F)F RMLFHPWPTXWZNJ-UHFFFAOYSA-N 0.000 description 1
- 229960004624 perflexane Drugs 0.000 description 1
- AQZYBQIAUSKCCS-UHFFFAOYSA-N perfluorotripentylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AQZYBQIAUSKCCS-UHFFFAOYSA-N 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3203—Polyhydroxy compounds
- C08G18/3206—Polyhydroxy compounds aliphatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3225—Polyamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
- C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
본 발명은 이소시아네이트 화합물 및 폴리올 화합물을 포함하는 우레탄 프리폴리머의 경화체를 포함하며, 상기 이소시아네이트 화합물은 총 중량에 대하여 하기 화학식 1로 표시되는 화합물을 3 내지 23 중량%로 포함하는 연마패드를 제공한다:
[화학식 1]
상기 식에서 n은 0 내지 5의 유리수이다.The present invention provides a polishing pad comprising a cured body of a urethane prepolymer containing an isocyanate compound and a polyol compound, wherein the isocyanate compound contains 3 to 23% by weight of a compound represented by the following formula (1) based on the total weight:
[Formula 1]
In the above formula, n is a rational number from 0 to 5.
Description
본 발명은 연마공정 시 웨이퍼 표면의 결함 발생을 감소시킬 수 있는 개선된 성능을 갖는 연마패드에 관한 것이다.The present invention relates to a polishing pad with improved performance that can reduce the occurrence of defects on the wafer surface during a polishing process.
화학기계적 평탄화/연마(CHEMICAL MECHANICAL PLANARIZATION / CHEMICAL MECHANICAL POLISHING, 이하, CMP라한다) 공정은 반도체 소자의 글로벌 평탄화를 위해 도입된 공정이다. 최근들어 웨이퍼의 대구경화, 고집적화, 선폭의 미세화 및 배선구조의 다층화 추세에 따라 웨이퍼의 CMP 공정 시 발생하는 웨이퍼의 표면 결함 감소에 대한 요구가 증가하고 있다.The chemical mechanical planarization/polishing (CHEMICAL MECHANICAL PLANARIZATION/CHEMICAL MECHANICAL POLISHING, hereinafter referred to as CMP) process is a process introduced for global planarization of semiconductor devices. Recently, with the trends of larger wafer diameters, higher integration, finer line widths, and multi-layered wiring structures, there is an increasing demand for reduction of wafer surface defects that occur during the CMP process of wafers.
CMP 공정에서는 웨이퍼 표면이 연마패드와 접촉된 상태에서 연마 슬러리가 공급되며, 이에 따라 상기 슬러리내의 화학 성분에 의한 웨이퍼 금속막질의 화학적인 제거 작용과 슬러리에 포함된 연마 입자와 연마패드의 표면에 의한 웨이퍼 금속막질의 물리적인 제거 작용이 동시에 이루어진다.In the CMP process, a polishing slurry is supplied while the wafer surface is in contact with a polishing pad. Accordingly, the chemical removal action of the wafer metal film by the chemical components in the slurry and the polishing action by the abrasive particles contained in the slurry and the surface of the polishing pad The physical removal of the wafer metal film occurs simultaneously.
상기 물리적인 제거 작용은 가압하에 이루어지므로, 연마패드의 마모에 의한 데브리(Debris)를 발생시키며, 이러한 데브리는 웨이퍼의 결함을 유발하는 것으로 알려져 있다. 특히 데브리의 사이즈가 클수록 웨이퍼 표면의 결함을 발생시키는 빈도가 증가하는 것으로 알려져 있다. Since the physical removal action is performed under pressure, debris is generated due to wear of the polishing pad, and such debris is known to cause defects in the wafer. In particular, it is known that the larger the size of the debris, the more frequent the occurrence of defects on the wafer surface.
그러므로, 웨이퍼 표면의 결함을 감소시키기 위해서는 상기데브리의 크기를 감소시킬 수 있는 기술의 개발이 필수적이라 할 수 있다.Therefore, in order to reduce defects on the wafer surface, it is essential to develop a technology that can reduce the size of the debris.
그러나, 종래기술의 경우 아직까지 데브리를 효과적으로 감소시킬 수 있는 방법을 제시하고 있지 못한 실정이다. However, the prior art has not yet proposed a method for effectively reducing debris.
본 발명은, 종래기술의 상기와 같은 문제를 해소하기 위하여 안출된 것으로서, The present invention was devised to solve the above problems of the prior art,
연마공정 시 발생하는 데브리의 크기를 감소시킴으로써 웨이퍼 표면의 결함을 감소시키며, 열안정성을 향상시킬 수 있는 연마패드를 제공하는 것을 목적으로 한다.The purpose is to provide a polishing pad that can reduce defects on the wafer surface and improve thermal stability by reducing the size of debris generated during the polishing process.
상기 목적을 달성하기 위하여, 본 발명은In order to achieve the above object, the present invention
이소시아네이트 화합물 및 폴리올 화합물을 포함하는 우레탄 프리폴리머의 경화체를 포함하며, It includes a cured body of urethane prepolymer containing an isocyanate compound and a polyol compound,
상기 이소시아네이트 화합물은 총 중량에 대하여 하기 화학식 1로 표시되는 화합물을 3 내지 23 중량%로 포함하는 연마패드를 제공한다.The isocyanate compound provides a polishing pad containing 3 to 23% by weight of a compound represented by the following formula (1) based on the total weight.
[화학식 1][Formula 1]
상기 식에서In the above equation
n은 0 내지 5의 유리수이다.n is a rational number from 0 to 5.
상기 화학식 1로 표시되는 화합물의 평균 n 값은 0.1 내지 0.8인 것이 바람직할 수 있다.It may be preferable that the average n value of the compound represented by Formula 1 is 0.1 to 0.8.
또한, 상기화학식 1로 표시되는 화합물은 n 값이 0 또는 1인 화합물들로 이루어지는 것이 바람직할 수 있다.In addition, the compound represented by Formula 1 may preferably be composed of compounds with an n value of 0 or 1.
본발명의 연마패드는 연마공정 시 발생하는 데브리의 크기를 감소시킴으로써 웨이퍼 표면의 결함을 감소시키며, 열안정성도 크게 향상시키는 효과를 제공한다.The polishing pad of the present invention reduces defects on the wafer surface by reducing the size of debris generated during the polishing process, and also provides the effect of greatly improving thermal stability.
도 1은 본 발명의 일 실시예 및 비교예에 따른 연마패드를 사용하는 경우 발생하는 데브리의 사이즈(Debris Size)를 측정하여 나타낸 그래프이며,
도 2는본 발명의 일 실시예 및 비교예에 따른 연마패드를 사용하는 경우 발생하는 웨이퍼 결함(defect)의 개수를 측정하여 나타낸 그래프이며,
도 3은 본 발명의 일 실시예 및 비교예에 따른 연마패드를 사용하는 경우 DMA Storage Modulus를 측정하여 나타낸 그래프이다.1 is a graph showing the measurement of the size of debris generated when using a polishing pad according to an embodiment and a comparative example of the present invention;
Figure 2 is a graph showing the number of wafer defects that occur when using a polishing pad according to an embodiment and a comparative example of the present invention;
Figure 3 is a graph showing the DMA Storage Modulus measured when using a polishing pad according to an embodiment and comparative example of the present invention.
이하, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 본 발명의 실시 예에 대하여 첨부한 도면을 참고로 하여 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein.
본 발명에서 “~~를 포함한다”는 의미는 포함되는 어떤 구성요소 이외에 다른 구성요소가 더 포함될 수 있다는 것을 의미하지만, 다른 구성요소 없이 상기 어떤 구성요소만으로 이루어지는 경우를 의미하기도 한다.In the present invention, the meaning of “including ~~” means that other components may be included in addition to certain included components, but it also means that the component consists of only the above-mentioned components without other components.
본 발명의 연마패드는 이소시아네이트 화합물 및 폴리올 화합물을 포함하는 우레탄 프리폴리머의 경화체를 포함하며, The polishing pad of the present invention includes a cured body of urethane prepolymer containing an isocyanate compound and a polyol compound,
상기 이소시아네이트 화합물은 총 중량에 대하여 하기 화학식 1로 표시되는 화합물을 3 내지 23 중량%로 포함하는 것을 특징으로 한다.The isocyanate compound is characterized in that it contains 3 to 23% by weight of a compound represented by the following formula (1) based on the total weight.
[화학식 1][Formula 1]
상기 식에서In the above equation
n은 0 내지 5의 유리수이다.n is a rational number from 0 to 5.
상기 화학식 1로 표시되는 화합물은 이소시아네이트 총 중량에 대하여, 하한 값이 3, 5, 7, 10, 15, 또는 20 중량% 중에서 선택되고, 상한 값이 23, 20, 15, 10, 7, 또는 5 중량% 중에서 선택되는 범위로 포함될 수 있다.The compound represented by Formula 1 has a lower limit of 3, 5, 7, 10, 15, or 20% by weight, and an upper limit of 23, 20, 15, 10, 7, or 5, based on the total weight of isocyanate. It may be included in a range selected from weight percent.
상기에서 화학식 1의 화합물이 이소시아네이트 총 중량에 대하여, 3중량% 미만으로 포함되는 경우에는 데브리의 사이즈 감소 및 이에 따르는 웨이퍼 표면의 결함 감소 효과를 기대하기 어려우며, 23 중량%를 초과하는 경우에도 데브리의 사이즈 감소 및 이에 따르는 웨이퍼 표면의 결함 감소 효과를 기대하기 어렵다.In the case where the compound of Formula 1 is contained in less than 3% by weight based on the total weight of isocyanate, it is difficult to expect the effect of reducing the size of debris and the resulting defects on the wafer surface, and even if it exceeds 23% by weight, the amount of debris is reduced. It is difficult to expect size reduction and subsequent reduction in defects on the wafer surface.
특히, 상기 화학식 1의 화합물이 23 중량%를 초과하는 경우에는 다관능 화합물이 과도한 함량으로 포함되어, 가교결합이 크게 증가하며, 이에 따라 우레탄 매트릭스가 과도하게 브리틀해지고, 데브리의 사이즈도 오히려 증가하는 것으로 확인되었다.In particular, when the compound of Formula 1 exceeds 23% by weight, the polyfunctional compound is included in an excessive amount, which greatly increases crosslinking, and as a result, the urethane matrix becomes excessively brittle and the size of the debris also increases. It was confirmed that it does.
상기 데브리(Debris)는 연마공정시 연마패드가 다이아몬드 디스크, 웨이퍼 등에 의해 마모될때 발생하는 연마패드의 파티클을 의미하며, 이러한 파티클들은 웨이퍼 표면의 결함을 발생시키는 원인으로 작용한다.특히 사이즈가 큰 데브리는 웨이퍼 표면의 결함을 증가시키므로, 웨이퍼의 결함을 감소시키기 위해서는 데브리의 사이즈를 줄이는 것이 중요하다.Debris refers to particles in the polishing pad that are generated when the polishing pad is worn by a diamond disk, wafer, etc. during the polishing process. These particles act as a cause of defects on the surface of the wafer. Especially in large sizes. Since debris increases defects on the wafer surface, it is important to reduce the size of debris in order to reduce wafer defects.
본 발명의 일 실시형태에 있어서, 상기화학식 1로 표시되는 화합물의 평균 n 값은 0.1 내지 0.8인 것이 바람직할 수 있다.In one embodiment of the present invention, it may be preferable that the average n value of the compound represented by Formula 1 is 0.1 to 0.8.
본 발명의 연마패드에서 상기 평균 n 값이 상술한 범위를 벗어나는 경우에는 데브리의 사이즈 감소 및 이에 따르는 웨이퍼 표면의 결함 감소 효과를 기대하기 어렵다. 특히, 상기 평균 n 값이 0.8을 초과하는 경우에는 3 이상의 다관능 화합물이 과도한 함량으로 포함되어, 가교결합이 크게 증가하며, 이에 따라 우레탄 매트릭스가 과도하게 브리틀해지고, 데브리의 사이즈도 오히려 증가하는 것으로 확인되었다.If the average n value in the polishing pad of the present invention is outside the above-mentioned range, it is difficult to expect the effect of reducing the size of debris and thereby reducing defects on the wafer surface. In particular, when the average n value exceeds 0.8, an excessive amount of polyfunctional compounds of 3 or more are included, resulting in a significant increase in crosslinking, which causes the urethane matrix to become excessively brittle and the size of the debris also increases. It was confirmed that
상기 평균 n 값은 하한 값이 0.1, 0.3, 0.5, 또는 0.7에서 선택되고, 상한 값이 0.8, 0.7, 0.5, 또는 0.3에서 선택되는 범위를 가질 수 있다.The average n value may have a lower limit value selected from 0.1, 0.3, 0.5, or 0.7, and an upper limit value selected from 0.8, 0.7, 0.5, or 0.3.
본 발명의 일 실시형태에 있어서, 상기 화학식 1로 표시되는 화합물은 n 값이 0 또는 1인 화합물들로 이루어지는 것이 바람직할 수 있다.In one embodiment of the present invention, it may be preferable that the compound represented by Formula 1 consists of compounds with an n value of 0 or 1.
상기 화학식 1로 표시되는 화합물에 n 값이 1을 초과하는 화합물이 포함되는 경우 가교결합이 과도하게 증가하여 입체장애를 발생시키며, 가교결합의 증가에 의해 우레탄 매트릭스가 과도하게 브리틀해지고, 데브리의 사이즈도 오히려 증가하는 것으로 확인되었다.When the compound represented by Formula 1 includes a compound with an n value exceeding 1, cross-linking increases excessively, causing steric hindrance, and the increase in cross-linking causes the urethane matrix to become excessively brittle, and the amount of debris increases. It was confirmed that the size also increased.
본 발명의 일 실시형태에 있어서, 상기 우레탄 프리폴리머는 이소시아네이트 화합물 및 폴리올 화합물을 7~9 : 1~3의 중량비로 포함할 수 있다.In one embodiment of the present invention, the urethane prepolymer may include an isocyanate compound and a polyol compound at a weight ratio of 7 to 9: 1 to 3.
본 발명의 일 실시형태에 있어서, 상기 이소시아네이트 화합물은 화학식 1로 표시되는 화합물을 제외한 이소시아네이트 화합물로서, 톨루엔디이소시아네이트(toluene diisocyanate, TDI), 나프탈렌-1, 5-디이소시아네이트(naphthalene-1, 5-diisocyanate), 파라페닐렌디이소시아네이트(p-phenylene diisocyanate), 토리딘디이소시아네이트(tolidine diisocyanate), 4, 4'-디페닐메탄디이소시아네이트(4, 4'-diphenyl methane diisocyanate), 헥사메틸렌디이소시아네이트(hexamethylene diisocyanate, HDI), 디시클로헥실메탄디이소시아네이트(dicyclohexylmethane diisocyanate), 1-이소시아네이토-4-[(4-이소시아네이토헥실)메틸]사이클로헥산(1-isocyanato-4-[(4-isocyanatocyclohexyl)methyl]cyclohexan, H12MDI), 이소포론디이소시아네이트(isoporone diisocyanate) 등으로 이루어진 군으로부터 선택되는 1종 이상이 바람직하게 사용될 수 있으나, 상기 이소시아네이트 화합물이 상기 화합물들로 한정되는 것은 아니다.In one embodiment of the present invention, the isocyanate compound is an isocyanate compound excluding the compound represented by Formula 1, and includes toluene diisocyanate (TDI), naphthalene-1, 5-diisocyanate (naphthalene-1, 5- diisocyanate), p-phenylene diisocyanate, tolidine diisocyanate, 4, 4'-diphenyl methane diisocyanate, hexamethylene diisocyanate , HDI), dicyclohexylmethane diisocyanate, 1-isocyanato-4-[(4-isocyanatocyclohexyl)methyl]cyclohexane (1-isocyanato-4-[(4-isocyanatocyclohexyl) )methyl]cyclohexan, H12MDI), isophorone diisocyanate, etc. may be preferably used, but the isocyanate compound is not limited to the above compounds.
본 발명의 일 실시형태에 있어서, 상기 폴리올 화합물로는 폴리카프로락톤폴리올, 폴리테트라메틸렌 에테르 글리콜(PTMEG), 폴리프로필렌 에테르 글리콜(PPG), 폴리에틸렌 에테르 글리콜(PEG), 아크릴 폴리올(acryl polyol) 등으로 이루어진 군으로 부터 선택되는 1종 이상이 바람직하게 사용될 수 있으나, 상기 이소시아네이트 화합물이 상기 화합물들로 한정되는 것은 아니다.In one embodiment of the present invention, the polyol compound includes polycaprolactone polyol, polytetramethylene ether glycol (PTMEG), polypropylene ether glycol (PPG), polyethylene ether glycol (PEG), acryl polyol, etc. One or more types selected from the group consisting of may be preferably used, but the isocyanate compound is not limited to the above compounds.
본 발명의 일 실시형태에 있어서, 상기 우레탄 프리폴리머는 에틸렌글리콜(EG), 1, 2-프로필렌 글리콜, 1, 3-프로필렌 글리콜, 1, 2-부탄디올, 1, 3-부탄디올, 2-메틸-1, 3-프로판디올, 1, 4-부탄디올(BDO), 네오펜틸글리콜, 1, 5-펜탄디올, 3-메틸-1, 5-펜탄디올, 1, 6-헥산디올, 디에틸렌글리콜, 디프로필렌글리콜, 트리프로필렌글리콜 등으로 이루어진 이루어진 군으로부터 선택되는 1종 이상의 사슬연장제를 더 포함할 수 있다.In one embodiment of the present invention, the urethane prepolymer is ethylene glycol (EG), 1, 2-propylene glycol, 1, 3-propylene glycol, 1, 2-butanediol, 1, 3-butanediol, 2-methyl-1 , 3-propanediol, 1, 4-butanediol (BDO), neopentyl glycol, 1, 5-pentanediol, 3-methyl-1, 5-pentanediol, 1, 6-hexanediol, diethylene glycol, dipropylene It may further include one or more chain extenders selected from the group consisting of glycol, tripropylene glycol, etc.
이 때, 상기 사슬연장제는 우레탄 프리폴리머 총 중량에 대하여, 0 내지 10 중량%로 포함될 수 있다. 상기 “0”은 사슬연장제가 포함되지 않는 경우를 의미한다.At this time, the chain extender may be included in an amount of 0 to 10% by weight based on the total weight of the urethane prepolymer. The above “0” means that the chain extender is not included.
상기 우레탄 프리폴리머는 총 중량에 대하여 0.1 내지 2.0 중량%의 계면활성제를 더 포함할 수 있다. 상기 계면활성제로는 예를 들어, 실리콘계 비이온성 계면활성제가 사용될 수 있으나, 이에 한정되는 것은 아니며, 이 분야에 공지된 성분이 제한 없이 사용될 수 있다.즉, 연마패드에 요구되는 물성에 따라 공지된 계면활성제를 다양하게 선택하여 사용할 수 있다.The urethane prepolymer may further include 0.1 to 2.0% by weight of a surfactant based on the total weight. The surfactant may be, for example, a silicone-based nonionic surfactant, but is not limited thereto, and components known in the art may be used without limitation. That is, known ingredients may be used according to the physical properties required for the polishing pad. A variety of surfactants can be selected and used.
본 발명의 일 실시형태에 있어서, 상기 우레탄 프리폴리머의 경화체는 4, 4'-메틸렌-비스-(2-클로로아닐린)(MBOCA); 디에틸톨루엔디아민(DETDA); 3, 5-디메틸티오-2, 4-톨루엔디아민 및 이의 이성질체; 3, 5-디에틸톨루엔-2, 4-디아민 및 그의 이성질체(예를 들어, 3, 5-디에틸톨루엔-2, 6-디아민); 4, 4'-비스-(sec-부틸아미노)-디페닐메탄; 1, 4-비스-(sec-부틸아미노)-벤젠; 4, 4'-메틸렌-비스-(2-클로로아닐린); 4, 4'-메틸렌-비스-(3-클로로-2, 6-디에틸아닐린)(MCDEA); 폴리테트라메틸렌옥사이드-디-p-아미노벤조에이트; N, N'-디알킬디아미노디페닐 메탄; p, p'-메틸렌 디아닐린(MDA); m-페닐렌디아민(MPDA); 4, 4'-메틸렌-비스-(2, 6-디에틸아닐린)(MDEA); 4, 4'-메틸렌-비스-(2, 3-디클로로아닐린)(MDCA); 4, 4'-디아미노-3, 3'-디에틸-5, 5'-디메틸 디페닐메탄; 2, 2', 3, 3'-테트라클로로 디아미노디페닐메탄; 트리메틸렌글리콜 디-p-아미노벤조에이트 등으로 이루어진 군에서 선택되는 1종 이상의 경화제를 포함할 수 있다.그러나, 상기 경화제가 상기에 나열된 화합물로 한정되는 것은 아니다.In one embodiment of the present invention, the cured product of the urethane prepolymer is 4, 4'-methylene-bis-(2-chloroaniline) (MBOCA); diethyltoluenediamine (DETDA); 3, 5-dimethylthio-2, 4-toluenediamine and isomers thereof; 3, 5-diethyltoluene-2, 4-diamine and its isomers (e.g., 3, 5-diethyltoluene-2, 6-diamine); 4, 4'-bis-(sec-butylamino)-diphenylmethane; 1, 4-bis-(sec-butylamino)-benzene; 4, 4'-methylene-bis-(2-chloroaniline); 4, 4'-methylene-bis-(3-chloro-2, 6-diethylaniline) (MCDEA); polytetramethyleneoxide-di-p-aminobenzoate; N, N'-dialkyldiaminodiphenyl methane; p, p'-methylene dianiline (MDA); m-phenylenediamine (MPDA); 4, 4'-methylene-bis-(2, 6-diethylaniline) (MDEA); 4, 4'-methylene-bis-(2, 3-dichloroaniline) (MDCA); 4, 4'-diamino-3, 3'-diethyl-5, 5'-dimethyl diphenylmethane; 2, 2', 3, 3'-tetrachloro diaminodiphenylmethane; It may include one or more curing agents selected from the group consisting of trimethylene glycol di-p-aminobenzoate, etc. However, the curing agent is not limited to the compounds listed above.
본 발명의 일 실시형태에 있어서, 상기우레탄 프리폴리머의 경화체는 우레탄 프리폴리머 65내지 90 중량%, 경화제 5 내지 30 중량%, 및 첨가제 0 내지 5 중량%를 포함할 수 있다.In one embodiment of the present invention, the cured body of the urethane prepolymer may include 65 to 90% by weight of the urethane prepolymer, 5 to 30% by weight of the curing agent, and 0 to 5% by weight of the additive.
상기에서 우레탄 프리폴리머의 경화체는 우레탄 프리폴리머 70 내지 85 중량%, 경화제 10 내지 25 중량%, 및 첨가제 2 내지 5 중량%를 포함하는 것이 더욱 바람직할 수 있다.In the above, the cured body of the urethane prepolymer may more preferably include 70 to 85% by weight of the urethane prepolymer, 10 to 25% by weight of the curing agent, and 2 to 5% by weight of the additive.
상기에서 첨가제는 이 분야에서 일반적으로 사용되는 첨가제를 의미한다.In the above, additives refer to additives commonly used in this field.
본 발명의 일 실시형태에 있어서, 상기우레탄 프리폴리머의 경화체는 첨가제로서 발포제를 포함할 수 있다. 상기 발포제는 연마패드의 기공 형성에 통상적으로 사용되는 것이라면 특별히 제한되지 않는다. 예를 들어, 고상 발포제, 액상 발포제, 및 기상 발포제 중에서 선택된 1종 이상이 사용될 수 있다. In one embodiment of the present invention, the cured body of the urethane prepolymer may include a foaming agent as an additive. The foaming agent is not particularly limited as long as it is commonly used to form pores in a polishing pad. For example, one or more types selected from solid foaming agents, liquid foaming agents, and gaseous foaming agents may be used.
상기 액상 발포제로는 휘발성 액상 발포제가 사용될 수 있으며, 구체적으로 프레온, 탄화수소 화합물, 과불화 화합물, 또는 이들의 조합물을 들 수 있다. 상기 프레온으로는 CCl3F(비점 23.8℃), CHCl2CF3(비점 28.7℃), CH3CCl2F(비점 32℃) 등을 들 수 있다. 상기 탄화수소 화합물로는 n-펜탄(비점 36.1℃), c-펜탄(비점 49℃), 메틸셀로솔브(methylcellosolve, 비점 124℃), 에틸 셀로솔브(ethyl cellosolve, 비점 136℃), 시클로헥사논(cyclohexanone, 비점 154℃) 등을 들 수 있다. 상기 과불화 화합물로는 PF-5056(비점 60 ℃, 3M 제조), PF-5058(비점 80℃, 3M 제조), 과불화탄소화합물(perfluorinated compounds), C4F9NO(비점 95 ℃) 및 이의이성체 등과 같은 퍼플루오로모르폴린 화합물(perfluoromorpholine compounds), Novec 1230(perfluoro(2-methyl-3-pentanone: C6F12O, 비점 49℃)등을 들 수 있다.The liquid foaming agent may be a volatile liquid foaming agent, and specifically includes freon, hydrocarbon compounds, perfluorinated compounds, or combinations thereof. Examples of the freon include CCl 3 F (boiling point 23.8°C), CHCl 2 CF 3 (boiling point 28.7°C), and CH 3 CCl 2 F (boiling point 32°C). The hydrocarbon compounds include n-pentane (boiling point 36.1°C), c-pentane (boiling point 49°C), methylcellosolve (boiling point 124°C), ethyl cellosolve (boiling point 136°C), and cyclohexanone. (cyclohexanone, boiling point 154°C), etc. The perfluorinated compounds include PF-5056 (boiling point 60 ℃, manufactured by 3M), PF-5058 (boiling point 80 ℃, manufactured by 3M), perfluorinated compounds, C 4 F 9 NO (boiling point 95 ℃) and their Examples include perfluoromorpholine compounds such as isomers, Novec 1230 (perfluoro(2-methyl-3-pentanone: C6F12O, boiling point 49°C), etc.
상기 기상 발포제로는 불활성 기체가 사용될 수 있으며, 구체적으로 He, Ne, Ar, Kr, Xe, Rn, N2, 또는 이들의 조합물이 사용될 수 있다.An inert gas may be used as the gaseous foaming agent, and specifically, He, Ne, Ar, Kr, Xe, Rn, N2, or a combination thereof may be used.
상기 고상 또는 액상 발포제는 상기 우레탄 프리폴리머의 경화체 총 중량에 대하여 0.1 중량% 내지 3 중량%의 양으로 포함될수 있으며, 상기 기상 발포제는 우레탄 프리폴리머의 경화체총 부피의 15% 내지 30%에 해당하는 부피로 사용될 수 있다.The solid or liquid foaming agent may be included in an amount of 0.1% to 3% by weight based on the total weight of the cured body of the urethane prepolymer, and the gaseous foaming agent may be included in a volume equivalent to 15% to 30% of the total volume of the cured body of the urethane prepolymer. can be used
또한, 상기 우레탄 프리폴리머의 경화체는 첨가제로서 계면활성제를 포함할 수 있다. 상기 계면활성제는 형성되는 포어들의 겹침 및 합침 현상을 방지하는 역할을 할 수 있다. 구체적으로, 상기 계면활성제는 실리콘계 비이온성 계면활성제가 적합하나, 이외에도 연마패드에 요구되는 물성에 따라 다양하게 선택할 수 있다.Additionally, the cured body of the urethane prepolymer may include a surfactant as an additive. The surfactant may serve to prevent overlapping and merging of formed pores. Specifically, silicone-based nonionic surfactants are suitable as the surfactant, but various other surfactants can be selected depending on the physical properties required for the polishing pad.
상기 계면활성제는 상기 우레탄 프리폴리머의 경화체 총 중량에 대하여 0.1 중량% 내지 2.0 중량%의 양으로 포함될수 있다.The surfactant may be included in an amount of 0.1% to 2.0% by weight based on the total weight of the cured body of the urethane prepolymer.
아래에서 액상 발포제를 사용하는 발포 과정을 예를 들어 설명한다. 그러나, 본 발명의 발포 과정은 이 분야에 공지된 기술이 제한 없이 적용될 수 있으며, 아래 예시된 발포 과정으로 한정되지 않는다. Below, the foaming process using a liquid foaming agent is explained as an example. However, the foaming process of the present invention can be applied without limitation to techniques known in the field, and is not limited to the foaming process illustrated below.
우레탄 프리폴리머와 경화제 혼합시, 1종 이상의 휘발성 액상 발포제와 불활성 기체를 사용하여 포어를 형성시키며, 프리폴리머, 경화제, 휘발성 액상 발포제, 불활성 기체는 혼합 과정에서 동시에 투입될 수 있다. 이때 알루미늄, SUS 등의 금속재질로 제작된 믹싱헤드챔버(Mixing Head Chamber) 내에 투입될 수 있다. 상기 믹싱헤드챔버에서 교반을 통해 프리폴리머와 경화제, 휘발성 액상 발포제와 불활성 기체가 동시 혼합되고, 혼합물이 몰드에 주입됨과 동시에 우레탄 발열에 의해 분산된 휘발성 액상 발포제가 기화되어 포어들이 형성된다.When mixing a urethane prepolymer and a curing agent, one or more volatile liquid foaming agents and an inert gas are used to form pores, and the prepolymer, curing agent, volatile liquid foaming agent, and inert gas can be added simultaneously during the mixing process. At this time, it can be put into a mixing head chamber made of metal materials such as aluminum and SUS. The prepolymer, curing agent, volatile liquid foaming agent, and inert gas are simultaneously mixed through stirring in the mixing head chamber, and at the same time the mixture is injected into the mold, the dispersed volatile liquid foaming agent is vaporized by heat generation from urethane to form pores.
상기 교반은 3, 000 내지 6, 000 rpm 으로 수행될 수 있다. 교반 속도가 상기 범위 내일 때, 휘발성 액상 발포제가 원료 내에 고르게 분산되어 포어를 형성하는데 더욱 유리할 수 있다.The stirring may be performed at 3,000 to 6,000 rpm. When the stirring speed is within the above range, it may be more advantageous for the volatile liquid foaming agent to be evenly dispersed in the raw material to form pores.
상기 휘발성 액상 발포제는 50 ~ 170℃ 비점을 가지는 물질을 사용할 수 있으며, 폴리우레탄 조성물 내에서 화학반응에 참여하지 않고, 일정량의 불활성 기체의 혼입상태에서 우레탄 반응열에 의한 기화에 의해 다량의 기포를 발생시킬 수 있다. 구체적으로, 탄화수소 화합물로써 메틸셀로솔브(methyl cellosolve), 에틸 셀로솔브(ethyl cellosolve), 사이클로 헥사논(cyclohexanone) 등으로 이루어진 군으로부터 선택되는 1종 이상이 사용될 수 있다. 과불화화합물로써 비스(노나플루오로부틸)(트리플루오로메틸)아민(bis(nonafluorobutyl)(trifluoromethyl)amine), 퍼플루오로트리부틸아민(perfluorotributylamine), 퍼플루 오로-N-메틸모르폴린(perfluoro-N-methylmorpholine), 퍼플루오로트리펜틸아민(perfluorotripentylamine) 및 퍼플루오로헥산(perfluorohexane) 등으로이루어진 군으로부터 선택되는 1종 이상이 사용될 수 있다. 상기 퍼플루오로 화합물의 시판품으로는 PF-5056(3M사), PF-5058(3M사), FC-40(3M사), FC-43(3M사), FC-72(3M사), FC-84(3M사), FC-770(3M사), FC-3283(3M사), FC-3284(3M사), Novec 7100(3M사), Novec 7200(3M사), Novec 7300(3M사), Novec 7500(3M사), Novec 7600(3M사), HT-50(Solvay사), HT-70(Solvay사), HT-80(Solvay사), HT-110(Solvay사), HT-135(Solvay사), HT-170 등을 들 수 있다. The volatile liquid foaming agent can be a material having a boiling point of 50 to 170°C. It does not participate in chemical reactions in the polyurethane composition, and generates a large amount of bubbles by vaporization due to the heat of urethane reaction in the presence of a certain amount of inert gas. You can do it. Specifically, one or more hydrocarbon compounds selected from the group consisting of methyl cellosolve, ethyl cellosolve, cyclohexanone, etc. may be used. Perfluorinated compounds include bis(nonafluorobutyl)(trifluoromethyl)amine, perfluorotributylamine, and perfluoro-N-methylmorpholine. One or more types selected from the group consisting of N-methylmorpholine), perfluorotripentylamine, and perfluorohexane may be used. Commercially available perfluoro compounds include PF-5056 (3M), PF-5058 (3M), FC-40 (3M), FC-43 (3M), FC-72 (3M), FC -84 (3M company), FC-770 (3M company), FC-3283 (3M company), FC-3284 (3M company), Novec 7100 (3M company), Novec 7200 (3M company), Novec 7300 (3M company) ), Novec 7500 (3M), Novec 7600 (3M), HT-50 (Solvay), HT-70 (Solvay), HT-80 (Solvay), HT-110 (Solvay), HT- 135 (Solvay), HT-170, etc.
불활성 기체는 우레탄 반응에 참여하지 않는 것으로서 밀폐된 Mixing head 에서 교반시 휘발성 액상 발포제의 분산 효율을 올리기 위해 사용하며, 구체적으로는 He, Ne, Ar, Kr, Xe, Rn, N2 등으로 이루어진 군으로부터 선택되는 1종 이상이 사용될 수 있다.Inert gas does not participate in the urethane reaction and is used to increase the dispersion efficiency of the volatile liquid foaming agent when stirring in a closed mixing head. Specifically, it is from the group consisting of He, Ne, Ar, Kr, Xe, Rn, N2, etc. One or more selected types may be used.
상기 우레탄 프리폴리머의 경화체는 첨가제로서 이 분야에 공지된 성분을 더 포함할 수 있다.The cured body of the urethane prepolymer may further include ingredients known in the art as additives.
이하, 본발명을 구체적으로 설명하기 위해 실시예를 들어 상세하게 설명하기로 한다. 그러나 본발명에 따른 실시예는 여러가지 다른형태로 변형될수있으며, 본 발명의 범위가 아래에서 상술하는 실시예에 한정되는 것으로 해석되어서는 아니된다. 본 발명의 실시예는 당업계에서 평균적인 지식을 가진 자에게 본발명을 보다 완전하게 설명하기 위해서 제공되는 것이다.Hereinafter, the present invention will be described in detail with reference to examples. However, the embodiments according to the present invention may be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. Examples of the present invention are provided to more completely explain the present invention to those with average knowledge in the art.
실시예 1: 연마패드의 제조Example 1: Manufacturing of polishing pad
1 단계) 우레탄 프리폴리머 제조 Step 1) Preparation of urethane prepolymer
이소시아네이트 화합물로서 TDI(toluene diisocyanate)80 중량% 및 하기 화학식 1에서 평균 n값이 0.5인 다관능메틸렌디페닐디이소시아네이트 20 중량%를 혼합하여 사용하였다.As an isocyanate compound, 80% by weight of toluene diisocyanate (TDI) and 20% by weight of polyfunctional methylenediphenyl diisocyanate with an average n value of 0.5 in the following formula (1) were used.
[화학식 1][Formula 1]
상기 이소시아네이트 화합물 80 중량%와 PTMG(Poly(tetramethylene ether)glycol, Mw: 1000) 20 중량%를 혼합하고, 온도를 80℃ 유지하면서 반응시켰다. 이후 80℃에서 반응시켜 우레탄 프리폴리머(NCO%: 8.9%, 점도:27, 000cps)를 제조하였다.80% by weight of the isocyanate compound and 20% by weight of PTMG (poly(tetramethylene ether)glycol, Mw: 1000) were mixed and reacted while maintaining the temperature at 80°C. Afterwards, the reaction was carried out at 80°C to prepare urethane prepolymer (NCO%: 8.9%, viscosity: 27,000cps).
2단계) 연마패드의 제조 Step 2) Manufacturing of polishing pad
프리폴리머, 경화제 및 휘발성 액상 발포제, 불활성 기체 삽입라인이 각각 장착되어 있는 캐스팅 장치에서, 프리폴리머 탱크에는 상기 실시예1의 프리폴리머를 주입하고, 경화제 탱크에는 4, 4'-메틸렌-비스-(2-클로로아닐린)을 주입하고, 발포제 탱크에는 휘발성 액상 발포제를 주입하였다. 상기 각 탱크로부터 프리폴리머, 경화제, 및 휘발성 액상 발포제를 토출하여 프리폴리머, 경화제, 및 휘발성 액상 발포제 혼합물을 제조하였다. 이 때, 상기 프리폴리머와 경화제는 8:2의 중량비로 혼합되었고, 상기 휘발성 액상 발포제는 상기 프리폴리머 및 경화제 합산 총 100 중량부를 기준으로 0.5 중량부로 혼합되었다.In a casting device equipped with a prepolymer, a curing agent, a volatile liquid foaming agent, and an inert gas insertion line, the prepolymer of Example 1 is injected into the prepolymer tank, and 4, 4'-methylene-bis-(2-chloro) is added to the curing agent tank. Aniline) was injected, and a volatile liquid foaming agent was injected into the foaming agent tank. The prepolymer, curing agent, and volatile liquid foaming agent were discharged from each tank to prepare a mixture of prepolymer, curing agent, and volatile liquid foaming agent. At this time, the prepolymer and the curing agent were mixed at a weight ratio of 8:2, and the volatile liquid foaming agent was mixed at 0.5 parts by weight based on a total of 100 parts by weight of the prepolymer and the curing agent.
불활성 기체는 별도의 원료 탱크없이 질소(순도 99.9999%) 봄베를 장착하여 사용하였으며, 상기 프리폴리머 및 경화제 합산 총 100 중량부를 기준으로 0.8 중량부로 주입하였다. 상기 프리폴리머, 경화제, 및 휘발성 액상 발포제 혼합물을 4500 rpm 으로 교반하면서, 불활성 기체를 16 kg/min의 속도로 공급하였다.The inert gas was used by installing a nitrogen (purity 99.9999%) cylinder without a separate raw material tank, and was injected at 0.8 parts by weight based on a total of 100 parts by weight of the prepolymer and curing agent. The prepolymer, curing agent, and volatile liquid blowing agent mixture was stirred at 4500 rpm while inert gas was supplied at a rate of 16 kg/min.
상기에서 제조된 상기 케이크를사각의 주형에 주입하고, 30분 동안 겔화 및 발포시킨 후 100℃ 오븐에서 20 시간 동안 경화시켰다.The cake prepared above was injected into a square mold, gelled and foamed for 30 minutes, and then cured in an oven at 100°C for 20 hours.
상기에서 제조된 경화물을 주형에서 꺼내어 재단 및 세정하여 연마패드를 제조하였다.The cured product prepared above was taken out of the mold, cut, and cleaned to manufacture a polishing pad.
실시예 2 내지 6 및 비교예 1 내지 4: 연마패드의 제조Examples 2 to 6 and Comparative Examples 1 to 4: Production of polishing pad
실시예 1에서 사용된 각 성분들 및 이들의 사용량을 하기 표 1에 기재된 양으로 변경하여 첨가한 것을 제외하고는 상기 실시예 1-1과 동일한 방법으로 연마패드를 제조하였다(하기 표 1에 기재되지 않은 성분은 실시예 1과 동일하게 사용됨).A polishing pad was manufactured in the same manner as in Example 1-1, except that each component used in Example 1 and its usage amount were changed and added in the amounts shown in Table 1 below (shown in Table 1 below) Components not used are used in the same way as in Example 1).
(%)total content
(%)
(%)TDI
(%)
(%)PTMG
(%)
주)TDI: toluene diisocyanateTDI: toluene diisocyanate
MDI: Methylene Diphenyl DiisocyanateMDI: Methylene Diphenyl Diisocyanate
PTMG: Poly(tetramethylene ether)glycolPTMG: Poly(tetramethylene ether)glycol
시험예 1: 연마패드의 연마 성능 평가Test Example 1: Evaluation of polishing performance of polishing pad
상기 실시예 및 비교예들에서 제조된 연마패드들을 사용하여 CMP 공정에서 발생되는 연마패드 데브리의 크기와 웨이퍼 결함을 측정하였고, 연마패드의 열안정성을 평가를 위하여 DMA(Dynamic mechanical analysis) 분석을 통하여 저장탄성율을 측정하였다. 이때 CMP 평가를 위하여 GnP사 Poli762 300mm Polisher 장비를 사용하고 소모품으로는 Cabot사 W7000 Slurry, 새솔다이아몬드사 LPX2 Disk를 적용하였다. Using the polishing pads manufactured in the above examples and comparative examples, the size of polishing pad debris and wafer defects generated in the CMP process were measured, and the thermal stability of the polishing pad was evaluated through DMA (Dynamic Mechanical Analysis) analysis. The storage modulus was measured. At this time, for CMP evaluation, GnP's Poli762 300mm Polisher equipment was used, and Cabot's W7000 Slurry and Saesol Diamond's LPX2 Disk were used as consumables.
(1) 데브리 크기 측정(1) Debris size measurement
데브리 크기는 연마공정 시 발생하는 데브리를 회수하여 particle size analyzer장치(Beckman사 제조)를 사용하여 측정하였다.Debris size was measured by collecting debris generated during the polishing process using a particle size analyzer (manufactured by Beckman).
(2) 웨이퍼 결함 측정(2) Wafer defect measurement
일정 시간의 CMP Process를 통과한 직후의 Wafer를 Cleaning 용액 및 초순수와 회전 운동을 하는 Brush 사이에 즉시 투입하여 일정 시간 동안 Cleaning Process를 수행하고, 이후 Spin dry 및 N2 Blow를 통해 Wafer 표면을 완전 건조 시킨 상태에서 분석 장비(KLA社의 Surfscan(SP2))에 투입하여 웨이퍼 결함을 측정하였다.Immediately after passing the CMP Process for a certain period of time, the wafer is immediately placed between the cleaning solution, ultra-pure water, and a rotating brush to perform the cleaning process for a certain period of time. Afterwards, the wafer surface is completely dried through Spin dry and N 2 Blow. In this state, wafer defects were measured by putting it into an analysis equipment (KLA's Surfscan (SP2)).
(3) DMA에 의한 열안정성 평가(3) Thermal stability evaluation by DMA
DMA에 의한 열안정성 평가는30℃/90℃ 조건에서TA Instrument社 DMA Q850을 사용하여 저장탄성율 값을 구하는 방식으로 실시되었다.Thermal stability evaluation by DMA was conducted by calculating the storage modulus value using TA Instrument's DMA Q850 under 30℃/90℃ conditions.
평가 결과는 하기 표 2 및 도 1 내지 3에 나타내었다.The evaluation results are shown in Table 2 and Figures 1 to 3 below.
(%)total content
(%)
(30℃/ 90℃)DMA Storage Modulus
(30℃/90℃)
(%)TDI
(%)
(%)PTMG
(%)
상기 표 2 및 도 1 내지 도 3으로부터 MDI의 함량 및 n 값이 본 발명의 범위에 포함되는 경우(실시예 1-6), 그러하지 않은 경우(비교예1-4)와 비교하여, 데브리 사이즈, 웨이퍼 디펙, 및 DMA Storage Modulus의 모든 측면에서 현저히 우수한 효과가 제공됨을 확인할 수 있다.From Table 2 and FIGS. 1 to 3, when the content and n value of MDI are within the range of the present invention (Example 1-6), compared to the case where it is not (Comparative Example 1-4), the debris size It can be confirmed that significantly excellent effects are provided in all aspects of wafer specifications, and DMA Storage Modulus.
Claims (11)
상기 이소시아네이트 화합물은 총 중량에 대하여 하기 화학식 1로 표시되는 화합물을 3 내지 23 중량%로 포함하는 연마패드:
[화학식 1]
상기 식에서
n은 0 내지 5의 유리수이다.It includes a cured body of urethane prepolymer containing an isocyanate compound and a polyol compound,
The isocyanate compound is a polishing pad comprising 3 to 23% by weight of a compound represented by the following formula (1) based on the total weight:
[Formula 1]
In the above equation
n is a rational number from 0 to 5.
상기 화학식 1로 표시되는 화합물의 평균 n 값이 0.1 내지 0.8인 것을 특징으로 하는 연마패드.According to paragraph 1,
A polishing pad, characterized in that the average n value of the compound represented by Formula 1 is 0.1 to 0.8.
상기 화학식 1로 표시되는 화합물은 n 값이 0 또는 1인 화합물들로 이루어지는 것을 특징으로 하는 연마패드.According to paragraph 2,
A polishing pad, characterized in that the compound represented by Formula 1 is composed of compounds with an n value of 0 or 1.
상기 우레탄 프리폴리머는 이소시아네이트 화합물 및 폴리올 화합물을 7~9 : 1~3의 중량비로 포함하는 것을 특징으로 하는 연마패드.According to paragraph 1,
A polishing pad characterized in that the urethane prepolymer contains an isocyanate compound and a polyol compound in a weight ratio of 7 to 9: 1 to 3.
상기 이소시아네이트 화합물은 화학식 1로 표시되는 화합물을 제외한 이소시아네이트 화합물로서, 톨루엔 디이소시아네이트(toluene diisocyanate, TDI), 나프탈렌-1, 5-디이소시아네이트(naphthalene-1, 5-diisocyanate), 파라페닐렌 디이소시아네이트(p-phenylene diisocyanate), 토리딘 디이소시아네이트(tolidine diisocyanate), 4, 4'-디페닐메탄 디이소시아네이트(4, 4'-diphenyl methane diisocyanate), 헥사메틸렌 디이소시아네이트(hexamethylene diisocyanate, HDI), 디시클로헥실메탄 디이소시아네이트(dicyclohexylmethane diisocyanate), 1-이소시아네이토-4-[(4-이소시아네이토헥실)메틸]사이클로헥산(1-isocyanato-4-[(4-isocyanatocyclohexyl)methyl]cyclohexan, H12MDI) 및 이소포론 디이소시아네이트(isoporone diisocyanate)로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 연마패드.According to paragraph 1,
The isocyanate compound is an isocyanate compound excluding the compound represented by Formula 1, and includes toluene diisocyanate (TDI), naphthalene-1, 5-diisocyanate, and paraphenylene diisocyanate ( p-phenylene diisocyanate, tolidine diisocyanate, 4, 4'-diphenyl methane diisocyanate, hexamethylene diisocyanate (HDI), dicyclohexyl Methane diisocyanate (dicyclohexylmethane diisocyanate), 1-isocyanato-4-[(4-isocyanatocyclohexyl)methyl]cyclohexan, H12MDI) A polishing pad comprising at least one selected from the group consisting of isophorone diisocyanate.
상기 폴리올 화합물은 폴리카프로락톤폴리올, 폴리테트라메틸렌 에테르 글리콜(PTMEG), 폴리프로필렌 에테르 글리콜(PPG), 폴리에틸렌 에테르 글리콜(PEG), 및 아크릴 폴리올(acryl polyol)로 이루어진 군으로 부터 선택되는 1종 이상인 것을 특징으로 하는 연마패드.According to paragraph 1,
The polyol compound is at least one selected from the group consisting of polycaprolactone polyol, polytetramethylene ether glycol (PTMEG), polypropylene ether glycol (PPG), polyethylene ether glycol (PEG), and acryl polyol. A polishing pad characterized in that.
상기 우레탄 프리폴리머는 에틸렌글리콜(EG), 1, 2-프로필렌 글리콜, 1, 3-프로필렌 글리콜, 1, 2-부탄디올, 1, 3-부탄디올, 2-메틸-1, 3-프로판디올, 1, 4-부탄디올(BDO), 네오펜틸글리콜, 1, 5-펜탄디올, 3-메틸-1, 5-펜탄디올, 1, 6-헥산디올, 디에틸렌글리콜, 디프로필렌글리콜, 및 트리프로필렌글리콜로 이루어진 이루어진 군으로부터 선택되는 1종 이상의 사슬연장제를 더 포함하는 것을 특징으로 하는 연마패드. According to paragraph 1,
The urethane prepolymer is ethylene glycol (EG), 1, 2-propylene glycol, 1, 3-propylene glycol, 1, 2-butanediol, 1, 3-butanediol, 2-methyl-1, 3-propanediol, 1, 4 -Consisting of butanediol (BDO), neopentyl glycol, 1, 5-pentanediol, 3-methyl-1, 5-pentanediol, 1, 6-hexanediol, diethylene glycol, dipropylene glycol, and tripropylene glycol. A polishing pad further comprising at least one chain extender selected from the group.
상기 우레탄 프리폴리머의 경화체는 4, 4'-메틸렌-비스-(2-클로로아닐린)(MBOCA); 디에틸톨루엔디아민(DETDA); 3, 5-디메틸티오-2, 4-톨루엔디아민 및 이의 이성질체; 3, 5-디에틸톨루엔-2, 4-디아민 및 이의 이성질체; 4, 4'-비스-(sec-부틸아미노)-디페닐메탄; 1, 4-비스-(sec-부틸아미노)-벤젠; 4, 4'-메틸렌-비스-(2-클로로아닐린); 4, 4'-메틸렌-비스-(3-클로로-2, 6-디에틸아닐린)(MCDEA); 폴리테트라메틸렌옥사이드-디-p-아미노벤조에이트; N, N'-디알킬디아미노디페닐 메탄; p, p'-메틸렌 디아닐린(MDA); m-페닐렌디아민(MPDA); 4, 4'-메틸렌-비스-(2, 6-디에틸아닐린)(MDEA); 4, 4'-메틸렌-비스-(2, 3-디클로로아닐린)(MDCA); 4, 4'-디아미노-3, 3'-디에틸-5, 5'-디메틸 디페닐메탄; 2, 2', 3, 3'-테트라클로로 디아미노디페닐메탄; 및 트리메틸렌글리콜 디-p-아미노벤조에이트로 이루어진 군에서 선택되는 1종 이상의 경화제를 포함하는 것을 특징으로 하는 연마패드.According to paragraph 1,
The cured product of the urethane prepolymer is 4, 4'-methylene-bis-(2-chloroaniline) (MBOCA); diethyltoluenediamine (DETDA); 3, 5-dimethylthio-2, 4-toluenediamine and isomers thereof; 3, 5-diethyltoluene-2, 4-diamine and isomers thereof; 4, 4'-bis-(sec-butylamino)-diphenylmethane; 1, 4-bis-(sec-butylamino)-benzene; 4, 4'-methylene-bis-(2-chloroaniline); 4, 4'-methylene-bis-(3-chloro-2, 6-diethylaniline) (MCDEA); polytetramethyleneoxide-di-p-aminobenzoate; N, N'-dialkyldiaminodiphenyl methane; p, p'-methylene dianiline (MDA); m-phenylenediamine (MPDA); 4, 4'-methylene-bis-(2, 6-diethylaniline) (MDEA); 4, 4'-methylene-bis-(2, 3-dichloroaniline) (MDCA); 4, 4'-diamino-3, 3'-diethyl-5, 5'-dimethyl diphenylmethane; 2, 2', 3, 3'-tetrachloro diaminodiphenylmethane; A polishing pad comprising at least one curing agent selected from the group consisting of trimethylene glycol di-p-aminobenzoate.
상기 우레탄 프리폴리머의 경화체는 우레탄 프리폴리머 65 내지 90 중량%, 경화제 5 내지 30중량%, 및 첨가제 0 내지 5 중량%를 포함하는 것을 특징으로하는 연마패드.According to paragraph 1,
A polishing pad, characterized in that the cured body of the urethane prepolymer includes 65 to 90% by weight of urethane prepolymer, 5 to 30% by weight of curing agent, and 0 to 5% by weight of additives.
상기 첨가제는 고상 발포제, 액상 발포제, 및 기상 발포제 중에서 선택된 1종 이상을 포함하는 것을 특징으로 하는 연마패드.According to clause 9,
A polishing pad, wherein the additive includes at least one selected from a solid foaming agent, a liquid foaming agent, and a gaseous foaming agent.
상기 첨가제는 계면활성제를 포함하는 것을 특징으로 하는 연마패드.According to clause 9,
A polishing pad, wherein the additive includes a surfactant.
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