KR20230147241A - Thin film formation method for improving defect in amorphous silicon layer for pattern formation and substrate processing apparatus therefor - Google Patents

Abstract

The present invention relates to a thin film forming method that can improve defects in an amorphous silicon layer for pattern formation and a substrate processing apparatus therefor.
A thin film forming method according to an embodiment includes the steps of supplying an oxygen-containing gas to a reaction space of a process chamber where a substrate with a metal hard mask layer formed on the upper surface is seated, forming plasma, and pre-treating the metal hard mask layer; forming a silicon oxide layer on the pretreated substrate; Post-processing the silicon oxide film layer by supplying an oxygen-containing gas to the process chamber and forming plasma; and forming an amorphous silicon film layer on the post-treated substrate.

Description

Thin film formation method for improving defect in amorphous silicon layer for pattern formation and substrate processing apparatus therefor}

The present invention relates to a thin film forming method and a substrate processing apparatus therefor, and the thin film forming method can improve defects in an amorphous silicon layer for pattern formation.

As semiconductor devices become more highly integrated, the line width of patterns included in the semiconductor device is becoming finer, and in order to form fine patterns on a substrate, pattern forming processes such as SADP (self aligned double patterning) have been developed and utilized. The SADP process is a process of performing double patterning to form a mask pattern with a narrower line width than a mask pattern formed by a lithography process, and using this to form a fine pattern.

Previously, the SADP process was performed to sequentially form a titanium nitride layer (TiN layer), a silicon oxynitride layer (SiON layer), a silicon oxide layer (TEOS layer), and an amorphous silicon layer (a-Si layer) on the substrate. A thin film structure is manufactured, and a fine pattern is formed on a substrate using the manufactured thin film structure. However, such existing methods have problems such as increased etch power due to a decrease in the pitch of the pattern, decreased etch selectivity of the silicon oxynitride film layer, and increased process time due to the number of thin films formed (see Figure 1(a)).

To compensate for this, various attempts have been made recently to reduce the thickness of the thin film and improve the etch profile and selectivity by using a metal hard mask layer (MH layer). For example, a thin film structure is manufactured by performing a SADP process to sequentially form a metal hard mask layer (MH layer), a silicon oxide layer (TEOS layer), and an amorphous silicon layer (a-Si layer) on a substrate. A thin film structure is used to form fine patterns on a substrate (see Figure 1(b)). This process causes the thickness of the hard mask and silicon oxide film to decrease as the device scale decreases, while the thickness of the amorphous silicon film tends to increase, improving the adhesion and interface defects between the amorphous silicon film layer and the lower film, thereby improving pattern quality. It serves as an important factor in decision making. In particular, for amorphous silicon, which is used as a hard mask in the semiconductor patterning process, adhesion to the lower layer and preventing peeling and popping phenomena due to the hydrogen content at the interface are important factors.

However, when using the above process, there is a problem that hydrogen is trapped on the surface of the substrate and the silicon oxide film, easily causing full-scale bubble defects on the amorphous silicon film, so research on methods to compensate for this is necessary.

According to one embodiment, the purpose is to provide technical details on a thin film forming method that can prevent bubble defects in an amorphous silicon thin film layer caused by hydrogen.

A thin film forming method according to an embodiment includes the steps of supplying an oxygen-containing gas to a reaction space of a process chamber where a substrate with a metal hard mask layer formed on the upper surface is seated, forming plasma, and pre-treating the metal hard mask layer; forming a silicon oxide layer on the pretreated substrate; Post-processing the silicon oxide film layer by supplying an oxygen-containing gas to the process chamber and forming plasma; and forming an amorphous silicon film layer on the post-treated substrate.

According to one embodiment, the thin film structure formed by the above thin film forming method includes a substrate, a metal hard mask layer formed on the upper surface of the substrate, a silicon oxide film layer formed on the upper surface of the metal hard mask layer, and a upper surface of the silicon oxide film layer. It may have a structure including an amorphous silicon film layer, and the metal hard mask layer may have a thickness of 50 to 500 Å, the silicon oxide film layer may have a thickness of 200 to 500 Å, and the amorphous silicon film layer may have a thickness of 300 to 500 Å. It may be 1,000 Å.

Meanwhile, a substrate processing apparatus according to an embodiment includes a process chamber forming a reaction space for processing a substrate; a gas injection unit installed in the process chamber to supply first source gas, second source gas, and oxygen gas to the reaction space, respectively; a substrate support portion installed inside the reaction space to face the gas injection portion and on which the substrate is seated; a gas supply unit connected to the gas injection unit to supply gas; a power supply unit that applies power to form plasma in the reaction space; and a control unit that controls the operation of the gas injection unit, the substrate support unit, the gas supply unit, and the power supply unit, wherein the control unit supplies an oxygen-containing gas to the reaction space and forms plasma to form a metal layer on the upper surface of the substrate. A hard mask layer is pretreated, a first source gas is supplied to the reaction space to form a silicon oxide film layer on the metal hard mask layer, an oxygen-containing gas is supplied to the reaction space, and plasma is formed to form a silicon oxide layer. After post-processing the oxide layer, a second source gas is supplied to the reaction space to form an amorphous silicon layer on the silicon oxide layer.

The thin film formation method according to the embodiment can prevent bubble defects in the amorphous silicon film caused by hydrogen by treating the substrate with oxygen plasma before and after depositing the oxide film.

Figure 1 is a structural diagram showing an example of (a) a thin film structure using an existing SADP process and (b) a thin film structure using an improved SADP process to form a fine pattern.
Figure 2 is a process diagram showing a thin film forming method according to an example.
Figure 3 is a process diagram showing a substrate processing apparatus for performing a thin film forming method according to an embodiment.
Figure 4 shows the results of evaluating the hydrogen ion concentration profile of the thin film structure manufactured by the method according to Example 1 and Comparative Example 3 through secondary ion mass spectrometry (SIMS) method.
Figure 5 is an image of the appearance of a thin film structure manufactured by the method according to (a) Comparative Example 2, (b) Comparative Example 1, and (c) Example 1.

Below, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, since the description of the present invention is only an example for structural and functional explanation, the scope of the present invention should not be construed as limited by the examples described in the text. In other words, since the embodiments can be modified in various ways and can take various forms, the scope of rights of the present invention should be understood to include equivalents that can realize the technical idea. In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment must include all or only such effects, so the scope of the present invention should not be understood as limited thereby.

The meaning of terms described in the present invention should be understood as follows.

Terms such as “first” and “second” are used to distinguish one component from another component, and the scope of rights should not be limited by these terms. For example, a first component may be named a second component, and similarly, the second component may also be named a first component. When a component is referred to as being “connected” to another component, it should be understood that it may be directly connected to the other component, but that other components may also exist in between. On the other hand, when a component is referred to as being “directly connected” to another component, it should be understood that there are no other components in between. Meanwhile, other expressions that describe the relationship between components, such as "between" and "immediately between" or "neighboring" and "directly neighboring" should be interpreted similarly.

Singular expressions should be understood to include plural expressions, unless the context clearly indicates otherwise, and terms such as “comprise” or “have” refer to the specified features, numbers, steps, operations, components, parts, or them. It is intended to specify the existence of a combination, and should be understood as not excluding in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

All terms used herein, unless otherwise defined, have the same meaning as commonly understood by a person of ordinary skill in the field to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as consistent with the meaning they have in the context of the related technology, and cannot be interpreted as having an ideal or excessively formal meaning unless clearly defined in the present invention.

Hereinafter, the present invention will be described in detail.

Figure 2 is a process diagram showing a thin film forming method according to an example.

Referring to FIG. 2, the thin film forming method according to the embodiment includes preprocessing a metal hard mask layer (S100); Forming a silicon oxide layer on the pretreated substrate (S200); Post-processing the silicon oxide layer (S300); and forming an amorphous silicon film layer on the post-processed substrate (S400).

First, in the step of pre-treating the metal hard mask layer (S100), oxygen-containing gas may be supplied on the metal hard mask layer of the substrate and plasma may be formed to pre-treat the metal hard mask layer to form a thin film.

The process chamber may be provided in various types of conventional substrate processing devices used to deposit thin films using plasma. In particular, the substrate processing device may be utilized to perform a plasma enhanced chemical vapor deposition (PECVD) process.

The substrate may be crystalline silicon, silicon oxide, silicon oxynitride, silicon nitride, strained silicon, silicon germanium, tungsten, titanium nitride, doped or undoped polysilicon, doped or undoped silicon wafer, patterned or patterned. Unused wafers, SOI (silicon on insulator), made of materials containing carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, glass, sapphire, low-k dielectrics, or mixtures thereof may be used. You can. The substrate 10 may be a result of a semiconductor substrate on which a predetermined device is formed, or may be a bare wafer.

The metal hard mask layer formed on the upper surface of the substrate is a metal component including tungsten (W), aluminum (Al), titanium (Ti), hafnium (Hf), tantalum (Ta), zirconium (Zr), or a mixture thereof. It may be formed using a metal precursor containing.

The metal hard mask layer may be formed through various conventional methods for forming a metal hard mask layer on a substrate. For example, sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition, or physical vapor deposition ( It may be formed by a method such as physical vapor deposition (PVD).

In particular, the metal hard mask layer may be deposited by supplying a mixed gas containing a metal precursor gas, carbon gas, and carrier gas in a specific ratio to the reaction space of the process chamber and forming plasma. For example, the metal precursor gas may be TBIDMW [bis(tert-butyl-imido)bis(dimethylamido)tungsten], but is not limited thereto.

In this step, oxygen-containing gas is supplied to the reaction space and plasma is formed to pre-treat the metal hard mask layer formed on the substrate.

The oxygen-containing gas may be a gas containing oxygen (O ₂ ) gas alone, or may be a mixed gas containing oxygen (O ₂ ) gas and an inert gas. _The concentration of the oxygen-containing gas can be adjusted for pretreatment by adjusting the mixing ratio of the oxygen (O ₂ ) gas and the inert gas.

Specifically, the pretreatment supplies oxygen at a flow rate of 10 to 500 sccm, applies dual frequency power of 13.56 MHz and 370 KHz, forms plasma with a power of 27.12 to 100 MHz, and is performed for 1 to 120 seconds. You can. At this time, the flow rate of oxygen may be 3000 to 7000 sccm, and the inert gas may be supplied at a flow rate of 1000 to 3000 sccm.

Next, in the step of forming a silicon oxide layer (S200), a silicon oxide layer can be formed on the substrate by supplying the first source gas onto the metal hard mask layer of the substrate pretreated in the same manner as above.

In this step, a silicon oxide film layer can be formed on the metal hardmask layer of the pretreated substrate by supplying the first source gas to the reaction space and forming plasma.

The first source gas is tetraethylorthosilicate (TEOS), silane, disilane, dichlorosilane, dimethyldimethoxysilane, silicon tetrachloride, Bis(tertiary-butylamino)silane, dichlorosilane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclo Siloxane (octamethyl cyclotetrasiloxanes), tris(tert-pentoxy)silanol, hexamethyldisilazane, tetrakis (dimethylamino) silicon, tetramethylsilane A silicon source containing (tetramethylsilane), tetramethyldisiloxane, diethylsilane, hexachlorodisilane, diethoxydimethylsilane, polydimethylsiloxane, or mixtures thereof. May contain gas. In particular, the silicon source gas may use TEOS.

Additionally, the first source gas may further include oxygen gas in addition to the silicon source gas. The first source gas may further include an inert gas such as nitrogen, helium, argon, etc. as a carrier gas.

Next, in the step of post-processing the silicon oxide layer (S300), oxygen-containing gas is supplied to the process chamber and plasma is formed to post-process the substrate on which the silicon oxide layer is formed.

In this step, oxygen-containing gas is supplied to the reaction space and plasma is formed to post-process the silicon oxide layer formed on the substrate.

The oxygen-containing gas may be a gas containing oxygen (O ₂ ) gas alone, or may be a mixed gas containing oxygen (O ₂ ) gas and an inert gas. _The concentration of the oxygen-containing gas can be adjusted for post-processing by adjusting the mixing ratio of the oxygen (O ₂ ) gas and the inert gas.

Specifically, the post-processing may be performed by applying dual frequency power of 13.56 MHz and 370 KHz, forming plasma with a power of 27.12 to 100 MHz, and lasting 1 to 120 seconds. At this time, the flow rate of oxygen may be 3000 to 7000 sccm, and the inert gas may be supplied at a flow rate of 1000 to 3000 sccm.

Next, in the step of forming an amorphous silicon film layer (S400), a second source gas is supplied to the post-processed substrate to form an amorphous silicon film layer.

In this step, an amorphous silicon film layer can be formed on the silicon oxide film layer of the pretreated substrate by supplying a second source gas to the reaction space and forming plasma.

The second source gas may include a silane gas, and the silane gas may include a Si _x H _y series gas such as mono silane, disilane, trisilane, etc. Additionally, the second source gas may further include hydrogen gas and a carrier gas.

In addition, the thin film forming method according to the embodiment may further include, but is not limited to, forming a silicon oxide film layer or an amorphous silicon film layer as described above and then purging the film by supplying a purge gas.

The thin film structure formed by the thin film forming method according to the above-described embodiment includes a substrate 10, a metal hard mask layer 20 formed on the upper surface of the substrate 10, and silicon formed on the upper surface of the metal hard mask layer 20. It may have a structure including an oxide layer 30 and an amorphous silicon layer 40 formed on the upper surface of the silicon oxide layer 30. The thin film structure can be pretreated using oxygen plasma before and after forming the silicon oxide layer 30 to remove hydrogen remaining on the upper surface of the metal hard mask layer 20 and the upper surface of the silicon oxide layer 30, respectively. Accordingly, the bonding strength of the amorphous silicon film layer 40 is improved, allowing the amorphous silicon film layer 40 to be bonded to the silicon oxide film layer 30 with strong bonding strength, and bubble defects caused by excessive residual hydrogen are prevented. Occurrence can be prevented.

Additionally, the thin film forming method according to the embodiment can be used to implement a pattern with a fine line width during the manufacturing process of a semiconductor device. To this end, in the thin film structure, the metal hard mask layer 20 may have a thickness of 50 to 500 Å, the silicon oxide layer 30 may have a thickness of 200 to 500 Å, and the amorphous silicon layer 40 may have a thickness of 200 to 500 Å. The thickness may be 300 to 1,000 Å. In particular, the thin film forming method according to the embodiment includes a metal hard mask layer 20 having a thickness of 150 to 250 Å, a silicon oxide layer 30 having a thickness of 200 to 300 Å, and an amorphous silicon film layer having a thickness of 400 to 500 Å. (40) can be configured to form each.

That is, the ratio of the silicon oxide film layer and the amorphous silicon film layer can be adjusted depending on the thickness of the metal hard mask layer.

For example, the metal hard mask layer and the silicon oxide layer may have a thickness ratio of 1:0.5 to 1:1.3. Preferably, the metal hard mask layer and the silicon oxide layer may have a thickness ratio of 1:1 to 1:1.25.

The silicon oxide film layer and the amorphous silicon film layer may have a thickness ratio of 1:0.5 to 1:1.3. Preferably, the thickness ratio of the silicon oxide film layer and the amorphous silicon film layer may be 1:0.8 to 1:1.25. The thin film forming method according to the above-described embodiment can prevent bubble defects in the amorphous silicon film caused by hydrogen by treating the substrate with oxygen plasma before and after depositing the oxide film.

Meanwhile, the substrate processing apparatus 100 according to the embodiment includes a process chamber 110, a gas injection unit 120, a substrate support unit 130, a gas supply unit 140, a power supply unit 150, and a control unit 160. It has a structure (see Figure 4).

The process chamber 110 may form a reaction space therein for substrate processing. The process chamber 110 can be implemented using chambers of various typical structures that form a space for substrate processing such as thin film deposition and etching.

The gas injection unit 120 may be installed in the process chamber 110 to supply first source gas, oxygen (O ₂ ) gas, second source gas, auxiliary gas, etc. to the reaction space. The gases can be supplied by being connected to a gas supply unit 140 installed outside the process chamber 110.

The gas injection unit 120 may be installed at a position opposite to the substrate support 130 at the upper part of the process chamber 110 to spray process gas on the substrate 10 seated on the substrate support 130. Gas The spray unit 120 has at least one inlet hole formed on the top or side to receive each gas from the outside, and a plurality of spray holes formed downward facing the substrate 10 to spray the gas onto the substrate 10. may include.

The gas injection unit 120 may have various shapes such as a shower head, nozzle, etc. In particular, when the gas injection unit 120 is in the form of a shower head, the gas injection unit 120 may be coupled to the process chamber 110 in a form that covers the upper part of the process chamber 110. For example, the gas injection unit 120 may be coupled to the side wall of the process chamber 110 in the form of a cover.

The substrate support unit 130 is installed in the process chamber 110 to face the gas injection unit 120, and the substrate 10 can be seated on the substrate support unit 130.

The substrate support 130 generally corresponds to the shape of the substrate 10, but is not limited to this and may be larger than the substrate 10 and have various shapes so as to stably seat the substrate 10. For example, the substrate support 130 ) may be connected to an external motor (not shown) to enable raising and lowering, and in this case, it may have a structure connected to a bellows pipe (not shown) to maintain airtightness.

Since the substrate support unit 130 as described above is configured to seat the substrate 10 on the top, it may also be called a substrate seating unit, a substrate supporter, a susceptor, etc. The substrate support unit 130 is used to heat the substrate 10. It may include a heater, and may include a heater power supply unit that supplies power to the heater.

The gas supply unit 140 is connected to the gas injection unit 120 and serves to supply gas to the reaction space of the process chamber, and can be implemented as a plurality of gas storage tanks installed outside the process chamber 110. there is.

The gas supply unit 140 is connected to the gas injection unit 120 and can supply auxiliary gases such as first and second source gas, oxygen gas, carrier gas, and inert gas to the reaction space of the process chamber, respectively. It may include at least one gas storage tank for

The gas supply unit 140 may have a structure in which a flow control valve is installed, and may be controlled by a control unit 160 to be described later to control the supply of gas.

The power supply unit 150 serves to supply power to form plasma in the reaction space. It may include at least one RF power source to apply at least one radio frequency (RF) power to the process chamber 110 . For example, the power supply unit 150 may be connected to apply RF power to the gas injection unit 120. In this case, in a configuration in which at least one RF power source is applied to the gas injection unit 120 to create a plasma atmosphere inside the process chamber, the gas injection unit 120 may be understood as a plasma electrode.

The control unit 150 serves to control the operation of the gas injection unit 120, the gas supply unit 140, and the power supply unit 150.

The control unit 160 applies power to form plasma inside the reaction space, and supplies first source gas, second source gas, and oxygen gas to the inside of the reaction space, respectively, to preprocess the metal hard mask layer or silicon In addition to post-processing the oxide layer, it is possible to control the formation of a silicon oxide layer and an amorphous silicon layer on the substrate, respectively.

In addition, the control unit 160 can control to supply additional auxiliary gas, such as an inert gas, to the reaction space in order to form a silicon oxide film layer and an amorphous silicon oxide film layer, respectively. Each can be formed and then controlled to supply purge gas.

Hereinafter, the present invention will be described in more detail through examples. The presented examples are only specific examples of the present invention and are not intended to limit the technical scope of the present invention.

<Example 1>

A substrate was prepared in which a tungsten carbide film layer with a thickness of 200 Å was formed as a metal hard mask layer. The substrate is seated in the chamber, oxygen gas is supplied at a flow rate of 5,400 sccm, argon gas is supplied to the reaction space at a flow rate of 1,550 sccm, and plasma is formed at a pressure of 3.8 mTorr in the reaction space to form a tungsten carbide film layer. was pretreated for 5 seconds.

TEOS gas was supplied to the reaction space, and plasma was formed to form a silicon oxide film layer with a thickness of 200 Å.

Afterwards, oxygen gas was supplied at a flow rate of 5,400 sccm, argon gas was supplied to the reaction space at a flow rate of 1,550 sccm, and plasma was formed at a pressure of 3.8 mTorr in the reaction space to post-process the silicon oxide film layer for 5 seconds. did.

Silane gas was supplied to the reaction space, and plasma was formed to form an amorphous silicon film layer with a thickness of 400 Å to prepare a thin film structure sample according to Example 1.

<Comparative Example 1>

A thin film structure sample was manufactured in the same manner as Example 1, except that a silicon oxide film layer with a thickness of 175 Å was formed.

<Comparative Example 2>

A thin film structure sample was manufactured in the same manner as Example 1, except that a silicon oxide film layer with a thickness of 150 Å was formed.

<Comparative Example 3>

Nitrogen (N ₂ ) gas is supplied to the reaction space at a flow rate of 2,000 sccm, plasma is formed while nitrous oxide (N ₂ O) gas is supplied at a flow rate of 2,800 sccm, and the tungsten carbide film layer is pretreated for 20 seconds. A thin film structure sample was prepared.

<Experimental example>

(1) Hydrogen concentration evaluation

The hydrogen ion concentration profile of the thin film structure manufactured by the method according to Example 1 and Comparative Example 3 was evaluated using secondary ion mass spectrometry (SIMS) method, and the results are shown in FIG. 4.

As shown in Figure 4, it was confirmed that the hydrogen ion concentration was significantly reduced in the sample according to Example 1 compared to the sample according to Comparative Example 3, and it was confirmed that the hydrogen ion concentration was not significantly reduced by nitrous oxide treatment. I was able to.

(2) Appearance evaluation

The appearance of the thin film structure manufactured by the method according to Example 1 and Comparative Examples 1 and 2 was evaluated, and the results are shown in Figure 5.

As shown in FIG. 5(a), it was confirmed that a bubble defect was formed on the front surface of the sample of Comparative Example 2, and as shown in FIG. 5(b), a bubble defect was formed on the front edge of the sample of Comparative Example 1. It was confirmed that a defect had been formed. On the other hand, as shown in Figure 5(c), it was confirmed that no such defect occurred in the sample of Example 1.

Through the above results, it was confirmed that the hydrogen ion concentration in the silicon oxide film layer was greatly reduced by oxygen pre- and post-treatment, thereby preventing bubble defects in the amorphous silicon film layer.

A detailed description of preferred embodiments of the invention disclosed above is provided to enable any person skilled in the art to make or practice the invention. Although the present invention has been described above with reference to preferred embodiments, those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the scope of the present invention. For example, a person skilled in the art may use each configuration described in the above-described embodiments by combining them with each other. Accordingly, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

The present invention may be embodied in other specific forms without departing from the spirit and essential features of the present invention. Accordingly, the above detailed description should not be construed as restrictive in all respects and should be considered illustrative. The scope of the present invention should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the present invention are included in the scope of the present invention. The present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein. In addition, claims that do not have an explicit reference relationship in the patent claims can be combined to form an embodiment or included as a new claim through amendment after filing.

10: substrate 20: metal hard mask layer
30: Silicon oxide film layer 40: Amorphous silicon film layer
100: substrate processing device 110: process chamber
120: gas injection part 130: substrate support part
140: gas supply unit 150: power supply unit
160: control unit

Claims (9)

supplying an oxygen-containing gas to a reaction space of a process chamber where a substrate with a metal hard mask layer formed on its upper surface is seated, and forming plasma to pre-treat the metal hard mask layer;
forming a silicon oxide layer on the pretreated substrate;
Post-processing the silicon oxide film layer by supplying an oxygen-containing gas to the process chamber and forming plasma; and
A thin film forming method comprising: forming an amorphous silicon film layer on the post-treated substrate. According to paragraph 1,
The metal hard mask layer is,
Characterized by being formed using a metal precursor containing one or more metals selected from the group consisting of tungsten (W), aluminum (Al), titanium (Ti), hafnium (Hf), tantalum (Ta), and zirconium (Zr). Thin film formation method using. According to paragraph 1,
The metal hard mask layer is,
A method of forming a thin film, characterized in that the thickness is 50 to 500 Å. According to paragraph 1,
The silicon oxide layer is,
Tetraethylorthosilicate (TEOS), silane, disilane, dichlorosilane, dimethyldimethoxysilane, tetrachloride silicon, Bistershire butylaminosilane ( bis(tertiary-butylamino)silane), dichlorosilane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethyl cyclotetrasiloxanes, tris (tert-pentoxy)silanol (tris(tert-pentoxy)silanol), hexamethyldisilazane, tetrakis (dimethylamino) silicon, tetramethylsilane, tetramethyldi A first silicon source comprising at least one silicon source selected from the group consisting of tetramethyldisiloxane, diethylsilane, hexachlorodisilane, diethoxydimethylsilane, and polydimethylsiloxane. A thin film forming method characterized by forming using a source gas. According to paragraph 1,
The silicon oxide layer is,
A method of forming a thin film, characterized in that the thickness is 200 to 500 Å. According to paragraph 1,
The metal hard mask layer and the silicon oxide layer have a thickness ratio of 1:0.5 to 1:1.3,
A thin film forming method characterized in that the thin silicon oxide film layer and the amorphous silicon film layer have a thickness ratio of 1:0.5 to 1:1.3. According to paragraph 1,
The amorphous silicon film layer is,
A method of forming a thin film, characterized in that it is formed using a second source gas containing at least one silicon source selected from the group consisting of monosilane, disilane, trisilane, and tetrasilane. According to paragraph 1,
The amorphous silicon film layer is,
A method of forming a thin film, characterized in that the thickness is 300 to 1,000 Å. According to paragraph 1,
The step of pre-treating the substrate or the step of post-processing the substrate are, respectively,
The oxygen-containing gas is supplied at a flow rate of 3000 to 7000 sccm, dual frequency power of 13.56 MHz and 370 KHz is applied, plasma is formed at a power of 27.12 to 100 MHz, and the process is performed for 1 to 120 seconds. Thin film formation method using.