KR20230146996A - Target and blackening layer - Google Patents
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- KR20230146996A KR20230146996A KR1020230046587A KR20230046587A KR20230146996A KR 20230146996 A KR20230146996 A KR 20230146996A KR 1020230046587 A KR1020230046587 A KR 1020230046587A KR 20230046587 A KR20230046587 A KR 20230046587A KR 20230146996 A KR20230146996 A KR 20230146996A
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- 239000000203 mixture Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 238000012360 testing method Methods 0.000 description 19
- 230000007613 environmental effect Effects 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 17
- 239000000956 alloy Substances 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000002845 discoloration Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000523 sample Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 229910002064 alloy oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910016507 CuCo Inorganic materials 0.000 description 1
- 229910003336 CuNi Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000001192 hot extrusion Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
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- 239000004926 polymethyl methacrylate Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/002—Alloys based on nickel or cobalt with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
Abstract
본 발명은, CuaNibCoc로 나타나는 조성을 갖고, a는 Cu의 비율을 at%로 나타내고, b는 Ni의 비율을 at%로 나타내고, c는 Co의 비율을 at%로 나타내고, a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c인 스퍼터링용 타깃 및, 조성이 (CuaNibCoc)100-xOx로 나타나는 금속 산화물로 이루어지고, a는 Cu의 비율을 at%로 나타내고, b는 Ni의 비율을 at%로 나타내고, c는 Co의 비율을 at%로 나타내고, x는 O의 비율을 at%로 나타내고, a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50인 것을 특징으로 하는 흑화막에 관한 것이다.The present invention has a composition expressed as Cu a Ni b Co c , a represents the proportion of Cu in at%, b represents the proportion of Ni in at%, c represents the proportion of Co in at%, a+b+c= A sputtering target of 100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, and a metal oxide with a composition of (Cu a Ni b Co c ) 100-x O x , a represents the proportion of Cu in at%, b represents the proportion of Ni in at%, c represents the proportion of Co in at%, x represents the proportion of O in at%, a+b+c=100, 0.30≤ It relates to a blackening film characterized by a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50.
Description
이 발명은, 스퍼터링용의 타깃 및 이 타깃을 이용하여 적합하게 형성할 수 있는 흑화막(黑化膜)에 관한 것이다.This invention relates to a target for sputtering and a blackening film that can be suitably formed using this target.
터치 패널은, 액정 패널로 대표되는 표시 장치(디스플레이 장치)의 상면에 터치 조작 검출용의 센서(터치 패널 센서)를 겹쳐, 표시와 입력의 2개의 기능을 융합한 장치이다. 이 터치 패널에서는, 조작자가 화면상의 표시를 터치 조작하면, 조작된 위치의 정보가 외부에 신호로서 출력되고, 그리고 외부 장치가 조작 위치의 위치 정보에 기초하여 조작자가 원하는 적절한 동작을 행한다.A touch panel is a device that combines the two functions of display and input by superimposing a sensor (touch panel sensor) for detecting touch operations on the upper surface of a display device (display device) represented by a liquid crystal panel. In this touch panel, when an operator touches a display on the screen, information on the operated position is output to the outside as a signal, and the external device performs an appropriate operation desired by the operator based on the position information of the manipulated position.
종래부터 터치 패널 센서에 있어서는, 전극으로서 투명한 ITO(Indium Tin Oxide: 산화 인듐 주석) 전극이 이용되고 있지만, ITO는, 비(比)저항이 높고, 또한 굽힘성도 뒤떨어지기 때문에, 최근에 있어서의 터치 패널의 대형화나 곡면화에 충분히 대응할 수 없는 문제를 갖고 있다.Conventionally, transparent ITO (Indium Tin Oxide) electrodes have been used as electrodes in touch panel sensors. However, ITO has a high specific resistance and is also inferior in bendability, so it has recently been used as an electrode for touch panel sensors. It has the problem of not being able to sufficiently respond to the larger or curved panel.
그 때문에, ITO보다도 비저항이나 굽힘성이 우수한 Cu나 Al을 메쉬 형상으로 가공한 메탈 메쉬 배선이 사용되기 시작하고 있다. 이 금속선을 이용한 금속 전극의 경우, 금속선이 불투명하고 금속 광택을 갖는 점에서, 외부로부터의 빛이 이 금속선에 부딪혀 반사되고, 그 반사광에 의해 표시부에 대한 시인성이 저하하는 것이 문제시되고 있다. 그리고, 이 문제를 해결하는 수단으로서, 금속선의 표면에 반사 저감막으로서의 흑화막을 형성하는 것이 제안되어 있다(하기 특허문헌 1, 2 참조).For this reason, metal mesh wiring made by processing Cu or Al into a mesh shape, which has better resistivity and bendability than ITO, is beginning to be used. In the case of a metal electrode using this metal wire, since the metal wire is opaque and has a metallic luster, light from the outside strikes the metal wire and is reflected, and the visibility of the display portion is reduced due to the reflected light, which is a problem. As a means of solving this problem, it has been proposed to form a blackening film as a reflection reduction film on the surface of the metal wire (see Patent Documents 1 and 2 below).
그런데, 반사 저감막으로서의 흑화막은, 향후, 차량 탑재 용도에서의 적용의 확대가 예상되고 있어, 고온 고습하에서도 막면이 변색되기 어려운 내(耐)환경 시험 특성이 요구된다. 예를 들면 상기 특허문헌 1에 기재된 흑화막은 CuNiW 합금의 산화물, 또한 특허문헌 2에 기재된 흑화막은 CuNiMo 합금의 산화물로 이루어지는 것이지만, 이들 공지의 흑화막에 있어서는 충분한 내환경 시험 특성은 얻어지고 있지 않다.However, the blackening film as a reflection reduction film is expected to expand in application in vehicle applications in the future, and environmental test characteristics that prevent the film surface from discoloring even under high temperature and high humidity are required. For example, the blackening film described in Patent Document 1 is made of an oxide of CuNiW alloy, and the blackening film described in Patent Document 2 is made of an oxide of CuNiMo alloy. However, these known blackening films have not been able to obtain sufficient environmental resistance test characteristics.
본 발명은 이상과 같은 사정을 배경으로 하여, 반사율이 낮게 억제되고 또한 고온 고습하에서도 변색되기 어려운 내환경 시험 특성을 구비한 흑화막을 제공하는 것 및, 이 흑화막을 형성하는 데에 적합한 스퍼터링용의 타깃을 제공하는 것을 목적으로 하여 이루어진 것이다.Against the background of the above circumstances, the present invention is to provide a blackening film with low reflectance and environmental test characteristics that are difficult to discolor even under high temperature and high humidity, and a sputtering film suitable for forming this blackening film. This was done with the purpose of providing a target.
본 발명자들은 상기 과제를 해결하기 위해 예의 검토를 거듭한 결과, Cu의 산화물을 포함하는 흑화막에 있어서, 추가로 Ni 및 Co를 소정량 함유시킴으로써, 고온 고습하에서도 변색되기 어려운 내환경 시험 특성이 얻어지는 것을 발견했다. 본 발명은 이러한 인식에 기초하여 이루어진 것이다.The present inventors have conducted extensive studies to solve the above problems and have found that, by additionally containing a predetermined amount of Ni and Co in the blackening film containing the oxide of Cu, the environmental test characteristics that are difficult to discolor even under high temperature and high humidity are improved. found what was achieved. The present invention has been made based on this recognition.
그리고 본 발명의 흑화막은, 조성이 (CuaNibCoc)100-xOx로 나타나는 금속 산화물로 이루어지고, 상기 a는 Cu의 비율을 at%로 나타내고, 상기 b는 Ni의 비율을 at%로 나타내고, 상기 c는 Co의 비율을 at%로 나타내고, 상기 x는 O의 비율을 at%로 나타내고,And the blackening film of the present invention is made of a metal oxide whose composition is expressed as (Cu a Ni b Co c ) 100-x O x , where a represents the proportion of Cu in at%, and b represents the proportion of Ni at Expressed in %, c represents the proportion of Co in at%, and x represents the proportion of O in at%,
a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50인 것을 특징으로 한다.It is characterized by a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50.
이와 같이 규정된 본 발명에 의하면, 반사율이 낮게 억제되고 또한 고온 고습하에서도 변색되기 어려운 내환경 시험 특성을 구비한 흑화막으로 할 수 있다.According to the present invention defined in this way, it is possible to produce a blackening film that has low reflectance and has environmental test characteristics that are difficult to discolor even under high temperature and high humidity.
여기에서, 상기 x가 30≤x<40이면, 저반사율이고 또한 내환경 시험 특성을 구비함과 함께, 종래부터 널리 사용되고 있는 염화 제2철로 에칭 가능한 흑화막으로 할 수 있다.Here, if x is 30 ≤
또한, 상기 x가 40≤x≤50이면, 저반사율이고 또한 내환경 시험 특성을 구비함과 함께, 전기비저항이 낮게 억제된 흑화막으로 할 수 있다.In addition, if x is 40≤x≤50, a blackening film can be obtained that has low reflectivity and environmental test characteristics as well as suppressed electrical resistivity to a low level.
또한 본 발명의 타깃은, 스퍼터링용의 타깃으로서, CuaNibCoc로 나타나는 조성을 갖고, 상기 a는 Cu의 비율을 at%로 나타내고, 상기 b는 Ni의 비율을 at%로 나타내고, 상기 c는 Co의 비율을 at%로 나타내고,In addition, the target of the present invention is a target for sputtering and has a composition expressed as Cu a Ni b Co c , where a represents the proportion of Cu in at%, the b represents the proportion of Ni in at%, and the c represents the ratio of Co in at%,
a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c인 것을 특징으로 한다.It is characterized by a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c.
이와 같이 규정된 본 발명의 타깃을 이용함으로써, 저반사율이고 또한 내환경 시험 특성을 구비한 흑화막을, 스퍼터 장치를 이용한 반응성 스퍼터링으로 적합하게 성막할 수 있다.By using the target of the present invention defined in this way, a blackening film with low reflectivity and environmental test characteristics can be suitably formed by reactive sputtering using a sputtering device.
도 1의 (A)는 본 발명의 일 실시 형태의 흑화막을 구비한 적층체를 나타낸 도면, 도 1의 (B)는 동(同)적층체의 다른 형태예를 나타낸 도면이다.
도 2는 동적층체의 추가로 다른 형태예를 나타낸 도면이다.
도 3은 내환경 시험의 설명도이다.FIG. 1(A) is a diagram showing a laminate provided with a blackening film according to an embodiment of the present invention, and FIG. 1(B) is a diagram showing an example of another form of the same laminate.
Figure 2 is a diagram showing another example of a dynamic layer body.
Figure 3 is an explanatory diagram of an environmental resistance test.
(발명을 실시하기 위한 형태)(Form for carrying out the invention)
다음으로 본 발명의 실시 형태에 대해서 구체적으로 설명한다.Next, embodiments of the present invention will be described in detail.
<1. 적층체><1. Laminate>
도 1에 있어서, 10A는 본 발명의 일 실시 형태의 흑화막을 구비한 적층체의 일 예를 나타내고 있다. 동도면에 있어서 12는 투명한 기재이고, 이 기재(12)의 한쪽의 면(도면 중의 상면)에, 전극 형성하는 금속층(14)이 기재(12) 전체면에 걸쳐 막 형상으로 적층되어 있다. 그리고 이 금속층(14)의, 기재(12)와는 반대측의 면 즉 도면 중 상면에, 반사 저감막으로서의 흑화막(16)이 적층 형성되어 있다. 이 흑화막(16)도 또한, 금속층(14)의 전체면에 걸쳐 막 형상으로 적층 형성되어 있다.In Fig. 1, 10A represents an example of a laminate provided with a blackening film of one embodiment of the present invention. In the same figure, 12 is a transparent substrate, and on one side of this substrate 12 (the upper surface in the drawing), a metal layer 14 to form an electrode is laminated in a film shape over the entire surface of the substrate 12. And a blackening film 16 as a reflection reduction film is laminated on the surface of this metal layer 14 opposite to the base material 12, that is, the upper surface in the figure. This blackening film 16 is also laminated in a film shape over the entire surface of the metal layer 14.
투명한 기재(12)는 소다 라임 유리 등의 유리라도 좋고, 또한 폴리에틸렌테레프탈레이트(PET), 폴리프로필렌(PP), 폴리스티렌(PS), 폴리염화비닐(PVC), 폴리카보네이트(PC), 폴리메틸메타크릴레이트(PMMA), 폴리이미드(PI) 등의 수지 재료라도 좋다. 수지 재료로서는, 폴리에틸렌테레프탈레이트(PET)가 바람직하다.The transparent substrate 12 may be glass such as soda lime glass, and may also be made of polyethylene terephthalate (PET), polypropylene (PP), polystyrene (PS), polyvinyl chloride (PVC), polycarbonate (PC), or polymethyl methane. Resin materials such as crylate (PMMA) and polyimide (PI) may also be used. As the resin material, polyethylene terephthalate (PET) is preferable.
금속층(14)은 전기비저항이 8.0μΩ·㎝ 이하의 도전성이 높은 것인 것이 바람직하고, 그러한 재료로서 순(純)Cu, Cu 합금, 순Al, Al 합금 등을 이용할 수 있다.The metal layer 14 is preferably highly conductive with an electrical resistivity of 8.0 μΩ·cm or less, and pure Cu, Cu alloy, pure Al, Al alloy, etc. can be used as such materials.
흑화막(16)은, 금속층(14)의 도면 중 상면에 적층 형성되어 있다. 흑화막(16)은 외부로부터의 빛이 이 금속선(금속층)에 부딪혀 반사되어, 그 반사광에 의해 표시부에 대한 시인성이 저하하는 것을 방지하는 것을 목적으로 한 층으로, 빛의 반사율이 20% 미만, 바람직하게는 15% 미만으로 억제되어 있는 것이 바람직하다. 이 흑화막(16)에 대해서는, 후에 상술한다.The blackening film 16 is laminated on the upper surface of the metal layer 14 in the drawing. The blackening film 16 is a layer aimed at preventing light from the outside from hitting the metal wire (metal layer) and being reflected, thereby reducing the visibility of the display portion due to the reflected light. The blackening film 16 has a light reflectance of less than 20%, Preferably, it is suppressed to less than 15%. This blackening film 16 will be described in detail later.
적층체(10A)는, 실제로는 이를 가공하여 터치 패널 센서의 요소로서 이용한다. 도 1의 (A)에서 나타내는, 10은 그의 가공 후의 적층체를 나타내고 있다.The laminate 10A is actually processed and used as an element of a touch panel sensor. In Figure 1(A), number 10 represents the laminate after processing.
가공 후의 적층체(10)에 있어서는, 가공 전의 적층체(10A)에 있어서의 막 형상의 금속층(14)의 여분이 되는 부분이 제거되어 다수의 극세선(S1)만이 금속층(14)으로서 남겨져 있고, 그들 남겨진 극세선(S1)이 서로 평행을 이루어 줄무늬 형상 패턴의 전극(14D)을 형성하고 있다.In the laminate 10 after processing, the excess portion of the film-like metal layer 14 in the laminate 10A before processing is removed, and only a large number of ultrafine wires S1 are left as the metal layer 14. , the remaining ultrafine lines S1 are parallel to each other to form electrodes 14D in a striped pattern.
흑화막(16)도 또한 여분의 부분이 제거되어, 극세선(S1)의 도면 중 상면을 덮는 부분만이 극세선(S2)이 되어 남겨지고, 그들이 극세선(S1)의 도면 중 상면에 입사하는 빛을 흡수하여 극세선(S1)으로부터의 빛의 반사를 억제하는 기능을 이루고 있다.The blackening film 16 also has its excess portion removed, leaving only the portion covering the upper surface of the drawing of the ultra-fine line S1 as the ultra-fine line S2, and these are incident on the upper surface of the drawing of the ultra-fine line S1. It has the function of absorbing light and suppressing reflection of light from the ultra-fine wire (S1).
이러한 극세선(S1, S2)은, 예를 들면 염화 제2철 등의 에칭액을 이용한 웨트 에칭 수법으로 형성할 수 있다.These ultrafine lines S1 and S2 can be formed, for example, by a wet etching method using an etching solution such as ferric chloride.
도 1의 (B)는 적층체의 다른 형태예를 나타내고 있다. 동도면에서 나타내는 적층체(20A, 20)와 같이, 금속층(14)과 투명의 기재(12)와의 사이에 흑화막(16)을 적층 형성하는 것도 가능하다.Figure 1(B) shows another example of a laminated body. Like the laminates 20A and 20 shown in the same figure, it is also possible to form a blackening film 16 between the metal layer 14 and the transparent substrate 12 by laminating them.
또한, 도 2에서 나타내는 적층체(22A, 22)와 같이, 도면 중 하측으로부터 위를 향하여 투명의 기재(12), 제1 흑화막(16), 금속층(14), 제2 흑화막(16)을 순서대로 적층 형성하여, 금속층(14)의 기재(12)와는 반대측의 도면 중 상면에 암색층(暗色層)이 되는 제2 흑화막(16)을 적층 형성함과 함께, 금속층(14)의 하측, 즉 금속층(14)과 기재(12)의 사이에 있어서도, 마찬가지의 암색층이 되는 제1 흑화막(16)을 적층 형성하는 것도 가능하다.In addition, like the laminates 22A and 22 shown in FIG. 2, a transparent base material 12, a first blackening film 16, a metal layer 14, and a second blackening film 16 are formed from the bottom upward in the figure. are sequentially laminated to form a second blackening film 16 that becomes a dark color layer on the upper surface of the figure opposite to the base material 12 of the metal layer 14, and the metal layer 14 Also on the lower side, that is, between the metal layer 14 and the base material 12, it is also possible to laminate the first blackening film 16, which becomes a similar dark color layer.
<2. 흑화막><2. Black screen>
다음으로, 본 실시 형태의 흑화막(16)에 대해서 설명한다.Next, the blackening film 16 of this embodiment is explained.
흑화막(16)은, 조성이 (CuaNibCoc)100-xOx로 나타나는 CuNiCo 합금 산화물로 이루어진다. 여기에서, a는 CuNiCo 합금에 차지하는 Cu의 비율(at%)을 나타내고, b는 CuNiCo 합금에 차지하는 Ni의 비율(at%)을 나타내고, c는 CuNiCo 합금에 차지하는 Co의 비율(at%)을 나타내고, x는 CuNiCo 합금 산화물에 차지하는 O의 비율(at%)을 나타내고 있다. 본 예에서는, 이들 a, b, c, x를, 각각, a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50으로 규정하고 있다.The blackening film 16 is made of CuNiCo alloy oxide whose composition is expressed as (Cu a Ni b Co c ) 100-x O x . Here, a represents the proportion of Cu in the CuNiCo alloy (at%), b represents the proportion of Ni in the CuNiCo alloy (at%), and c represents the proportion of Co in the CuNiCo alloy (at%). , x represents the proportion (at%) of O in the CuNiCo alloy oxide. In this example, a, b, c, and x are defined as a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65, 0.1≤c, 30≤x≤50.
흑화막(16)에 있어서의 각 화학 성분의 한정 이유 등을 이하에 설명한다.The reasons for limitation of each chemical component in the blackening film 16 are explained below.
Cu는, 산화물로 함으로써 암색화하여 막의 반사율을 낮게 하는 데에 유효한 원소이다. CuNiCo 합금에 차지하는 Cu의 비율 (a)가 과도하게 작으면, 상대적으로 Ni, Co의 비율 (b+c)가 증가하기 때문에 염화 제2철을 이용한 에칭성이 악화된다. 한편, Cu의 비율 (a)가 과도하게 크면, 상대적으로 Ni, Co의 비율 (b+c)가 저하하여, 내환경 시험 특성이 악화된다. 이 때문에 본 예에서는, Cu의 비율 (a)를 0.30≤a/(a+b+c)≤0.70으로 규정하고 있다. 바람직하게는, 0.40≤a/(a+b+c)≤0.70이다.Cu is an element effective in darkening the film by forming it into an oxide and lowering the reflectance of the film. If the proportion of Cu (a) in the CuNiCo alloy is excessively small, the proportion of Ni and Co (b+c) relatively increases, and thus the etching property using ferric chloride deteriorates. On the other hand, when the ratio (a) of Cu is excessively large, the ratio of Ni and Co (b+c) relatively decreases, and the environmental test characteristics deteriorate. For this reason, in this example, the Cu ratio (a) is specified as 0.30≤a/(a+b+c)≤0.70. Preferably, 0.40≤a/(a+b+c)≤0.70.
Ni는, 흑화막의 내식성 및 내변색성을 높이는 데에 유효한 원소이고, 이 효과를 얻기 위해 본 예에서는, CuNiCo 합금에 차지하는 Ni의 비율 (b)를 10(at%) 이상으로 한다. 단, Ni를 함유시킨 경우에서도, 고온 고습하에서는, 국소적인 반점(斑點) 변색이 생기고, 이 반점 변색부를 기점으로 하여 변색이 퍼져 버리는 경우가 있다. 이 반점 변색은 Ni의 비율이 클수록 현저하게 확인되는 점에서, 본 예에서는, Ni의 비율 (b)를 10≤b≤65로 규정하고 있다. 바람직하게는 30≤b≤50이고, 보다 바람직하게는 40≤b≤50이다.Ni is an element effective in increasing the corrosion resistance and discoloration resistance of the blackening film, and in this example to obtain this effect, the ratio (b) of Ni to the CuNiCo alloy is set to 10 (at%) or more. However, even when Ni is contained, localized discoloration may occur under high temperature and high humidity, and the discoloration may spread starting from this spotty discoloration area. Since this spot discoloration becomes more noticeable as the Ni ratio increases, in this example, the Ni ratio (b) is specified as 10≤b≤65. Preferably, it is 30≤b≤50, and more preferably, it is 40≤b≤50.
Co는, 상기 반점 변색의 발생을 억제하는 데에 유효한 원소이다. 그 효과를 얻기 위해 본 예에서는, CuNiCo 합금에 차지하는 Co의 비율 (c)를 0.1(at%) 이상으로 한다. 단, 과잉인 첨가는 반사율을 상승시키기 때문에, 그의 상한을 20(at%)으로 하는 것이 바람직하다. 보다 바람직한 범위는, 1≤c≤10이다.Co is an element effective in suppressing the occurrence of the above-mentioned spot discoloration. In order to obtain that effect, in this example, the proportion (c) of Co in the CuNiCo alloy is set to 0.1 (at%) or more. However, since excessive addition increases the reflectance, it is desirable to set the upper limit to 20 (at%). A more preferable range is 1≤c≤10.
O는, CuNiCo 합금의 산화물로 이루어지는 흑화막에 있어서, 그의 비율 (x)를 높임으로써, 반사율을 낮게 억제하고, 또한 내환경 시험 특성을 높일 수 있다. 단, 비율 (x)를 과도하게 높인 경우에는 에칭성이 악화되기 때문에, 본 예에서는 비율 (x)를 30≤x≤50으로 규정하고 있다.In the blackening film made of the oxide of CuNiCo alloy, O can suppress the reflectance low and improve the environmental test characteristics by increasing its ratio (x). However, if the ratio (x) is excessively increased, the etching properties deteriorate, so in this example, the ratio (x) is specified as 30≤x≤50.
또한, 이와 같이 규정된 범위 내에 있어서, 전기비저항과 에칭성은 트레이드 오프의 관계에 있는 것이 확인되고 있어, 에칭성을 선택적으로 높이고 싶은 경우는 O의 비율 (x)를, 30≤x<40의 범위 내로 하는 것이 바람직하다. 한편, 우수한 전기비저항을 선택적으로 얻고 싶은 경우는 비율 (x)를, 40≤x≤50의 범위 내로 하는 것이 바람직하다.In addition, it has been confirmed that within the range specified in this way, there is a trade-off relationship between electrical resistivity and etching properties, and when it is desired to selectively increase etching properties, the ratio of O (x) must be set within the range of 30 ≤ x < 40. It is desirable to do it within. On the other hand, when it is desired to selectively obtain excellent electrical resistivity, it is desirable to set the ratio (x) within the range of 40≤x≤50.
흑화막의 성막에는, 산소 가스를 포함하는 반응성 스퍼터링법을 적합하게 이용할 수 있다. 구체적으로는, 밸런스드 마그네트론 스퍼터링법, 언밸런스드 마그네트론 스퍼터링법, 이온 플레이팅법 등을 들 수 있다. 스퍼터링에 의해 형성되는 흑화막의 금속 성분의 조성은, 스퍼터링용의 타깃의 조성과 거의 동일하고, 스퍼터링에 의한 성막은 제조성도 우수하다.To form a blackening film, a reactive sputtering method containing oxygen gas can be suitably used. Specifically, balanced magnetron sputtering method, unbalanced magnetron sputtering method, ion plating method, etc. can be mentioned. The composition of the metal component of the blackening film formed by sputtering is almost the same as that of the target for sputtering, and film formation by sputtering is also excellent in manufacturability.
<3. 타깃><3. Target>
본 실시 형태의 스퍼터링용의 타깃은, 상기 흑화막을 형성하는 용도로 이용되는 것으로서, Cu, Ni, Co를 함유하고, CuaNibCoc로 나타나는 조성을 갖고 있다. 단, 타깃에는 불가피적 불순물이 포함될 수 있다.The target for sputtering of this embodiment is used for forming the blackening film, contains Cu, Ni, and Co, and has a composition expressed as Cu a Ni b Co c . However, the target may contain unavoidable impurities.
여기에서, a는 CuNiCo 합금에 차지하는 Cu의 비율(at%)을 나타내고, b는 CuNiCo 합금에 차지하는 Ni의 비율(at%)을 나타내고, c는 CuNiCo 합금에 차지하는 Co의 비율(at%)을 나타내고, 이들 a, b, c는, 각각, a+b+c=100, 0.30≤a/(a+b+c)≤0.70, 10≤b≤65로 규정되어 있다.Here, a represents the proportion of Cu in the CuNiCo alloy (at%), b represents the proportion of Ni in the CuNiCo alloy (at%), and c represents the proportion of Co in the CuNiCo alloy (at%). , these a, b, and c are defined as a+b+c=100, 0.30≤a/(a+b+c)≤0.70, and 10≤b≤65, respectively.
이들 a, b, c를 상기 흑화막의 조성과 동일한 범위에서 규정한 것은, 스퍼터링법에 의해 형성되는 흑화막의 금속 성분의 조성이, 스퍼터링용의 타깃의 조성과 거의 동일해지는 것에 기초하고 있다.The reason that these a, b, and c are defined in the same range as the composition of the blackening film is based on the fact that the composition of the metal component of the blackening film formed by the sputtering method is almost the same as the composition of the target for sputtering.
본 타깃은, 소정의 성분 조성을 갖는 블록을 용제에 의해 제조하고, 그로부터 잘라내어 제작할 수 있다.This target can be manufactured by manufacturing a block with a predetermined composition using a solvent and cutting it out from there.
또한, 경우에 따라서는, 성분 원소를 포함하는 분말을 혼합하여, 혼합분(粉)을 냉간으로부터 열간에 있어서 가압함으로써 제조할 수 있다. 원료 분말은, 성분 원소를 포함하는 순금속 또는 합금이라도 좋다. 성형 방법으로서는, 예를 들면, 냉간 정수압 성형(CIP)법, 열간 정수압 성형(HIP)법, 열간 압출법, 초고압 핫 프레스법 등이 있다.Additionally, depending on the case, it can be manufactured by mixing powders containing the constituent elements and pressurizing the mixed powder from cold to hot. The raw material powder may be a pure metal or alloy containing component elements. Molding methods include, for example, cold isostatic pressing (CIP), hot isostatic pressing (HIP), hot extrusion, and ultra-high pressure hot pressing.
(실시예)(Example)
다음으로 본 발명의 실시예를 이하에 상세하게 설명한다. 이 실시예에서는, 하기표 1, 2에서 나타내는 조성의 금속 산화물로 이루어지는 흑화막을 구비한 적층체를 제작하여, 반사율, 내환경 시험 특성, 전기비저항, 에칭성의 평가를 행했다.Next, embodiments of the present invention will be described in detail below. In this example, a laminate provided with a blackening film made of a metal oxide with the composition shown in Tables 1 and 2 below was produced, and the reflectance, environmental test characteristics, electrical resistivity, and etching properties were evaluated.
<적층체의 제작><Production of laminate>
상기 표 1, 표 2에 나타내는 금속 성분 조성이 되도록 용제에 의해 타깃을 제작했다.A target was produced using a solvent so as to have the metal composition shown in Tables 1 and 2 above.
다음으로, 제작한 타깃을 이용하여 반응성 스퍼터링법에 의해, 평가용의 유리 기재(사이즈: 직경 100㎜×두께 0.5㎜)의 표면 혹은 유리 기재의 표면에 형성한 Cu 금속막의 표면에 막두께 30㎚∼50㎚의 흑화막을 형성했다.Next, using the manufactured target, a film thickness of 30 nm was applied to the surface of the glass substrate for evaluation (size: 100 mm in diameter x 0.5 mm in thickness) or the surface of the Cu metal film formed on the surface of the glass substrate by the reactive sputtering method. A blackening film of ∼50 nm was formed.
스퍼터링에 의한 흑화막의 성막 조건은, 이하와 같다.The film formation conditions for the blackening film by sputtering are as follows.
·진공도: 1×10-4㎩ 이하·Vacuum: 1×10 -4 Pa or less
·성막 가스: Ar 가스와 산소 가스의 혼합 가스·Film formation gas: Mixed gas of Ar gas and oxygen gas
·스퍼터압: 0.15㎩·Sputter pressure: 0.15Pa
·스퍼터 파워: 150W·Sputter power: 150W
<반사율의 평가><Evaluation of reflectance>
흑화막/Cu 금속막/기재의 층 구성으로 이루어지는 적층체를 이용하여, JIS K 7105:2008에 준거하여 반사율의 측정을 행했다. 상세하게는 자외 가시 분광 광도계를 이용하여 가시광(파장 400㎚∼800㎚)에 대해서 파장 50㎚마다의 반사율을 측정하고, 그의 평균값을 반사율로서 산출했다. 반사율의 측정은, 흑화막의 측으로부터 기재측을 보았을 때의 반사광의 측정, 즉 흑화막의 측으로부터 기재측에 빛이 입사했을 때의 반사광을 측정하여, 하기 평가 기준으로 평가했다. 그 결과를 표 1, 표 2에 나타낸다.Reflectance was measured based on JIS K 7105:2008 using a laminate consisting of a blackening film/Cu metal film/substrate layer structure. In detail, the reflectance was measured for every 50 nm of wavelength for visible light (wavelength 400 nm to 800 nm) using an ultraviolet-visible spectrophotometer, and the average value was calculated as the reflectance. The reflectance was measured by measuring the reflected light when looking at the substrate side from the blackening film side, that is, measuring the reflected light when light was incident on the substrate side from the blackening film side, and evaluating it based on the following evaluation criteria. The results are shown in Tables 1 and 2.
○: 반사율이 15% 미만○: Reflectance is less than 15%
△: 반사율이 15% 이상, 20% 미만△: Reflectance is 15% or more, less than 20%
×: 반사율이 20% 이상×: Reflectance is 20% or more
<내환경 시험 특성의 평가><Evaluation of environmental test characteristics>
도 3에서 나타내는 바와 같이, 흑화막/Cu 금속막/흑화막/기재의 층 구성으로 이루어지는 적층체를 이용하고, 이러한 적층체를 85℃×85%RH(상대 습도)의 대기 분위기하에서 보존유지하고, 100시간마다 적층체의 막면의 명도 (L*) 및 색도 (a*, b*)를 분광 색차계로 측정하여, 하기 계산식으로 규정된 시험 개시 시(0시간)를 기준으로 한 색차 (ΔE*)를 산출했다.As shown in Figure 3, a laminate consisting of a layer structure of blackening film/Cu metal film/blackening film/substrate is used, and this laminate is stored and maintained in an atmospheric atmosphere of 85°C x 85%RH (relative humidity). , the brightness (L*) and chromaticity (a*, b*) of the film surface of the laminate are measured with a spectroscopic colorimeter every 100 hours, and the color difference (ΔE*) is based on the start of the test (0 hours) defined by the following calculation formula ) was calculated.
그리고 색차 ΔE*가 5 이하였던 시간을 내용(耐用) 시간으로 하여, 하기 평가 기준으로 평가했다. 그 결과를 표 1, 표 2에 나타낸다.The time when the color difference ΔE* was 5 or less was considered the useful time, and was evaluated using the following evaluation criteria. The results are shown in Tables 1 and 2.
○: 내용 시간이 1000시간 이상인 경우○: When the content time is more than 1000 hours
△: 내용 시간이 500시간 이상, 1000시간 미만인 경우△: When the content time is more than 500 hours but less than 1000 hours
×: 내용 시간이 500시간 미만인 경우×: When the content time is less than 500 hours
<전기비저항의 평가><Evaluation of electrical resistivity>
흑화막(두께 50㎚)/기재의 층 구성으로 이루어지는 적층체를 제작하여, 4탐침법에 의해 흑화막의 5개소에서 측정하고, 그의 평균값으로부터 전기비저항(Ω·㎝)을 산출하여, 하기 평가 기준으로 평가했다. 4탐침법에 의한 측정에 있어서, 측정기로서 저(低)저항률계(닛토세이코애널리텍 가부시키가이샤 제조 MCP-T610)를 사용하고, 측정 프로브로서 PSP 프로브를 사용했다. 그 결과를 표 1, 표 2에 나타낸다.A laminate consisting of a layered structure of blackening film (thickness 50 nm) / base material was manufactured, measurement was made at five locations on the blackening film by the four-probe method, and the electrical resistivity (Ω·cm) was calculated from the average value, and the following evaluation criteria were used. It was evaluated as In the measurement by the four-probe method, a low resistivity meter (MCP-T610 manufactured by Nitto Seiko Analytech Co., Ltd.) was used as a measuring instrument, and a PSP probe was used as a measuring probe. The results are shown in Tables 1 and 2.
○: 1Ω·㎝ 미만○: Less than 1Ω·cm
△: 1Ω·㎝ 이상, 10Ω·㎝ 미만△: 1Ω·cm or more, less than 10Ω·cm
×: 10Ω·㎝ 이상×: 10Ω·cm or more
<에칭성의 평가><Evaluation of etching properties>
흑화막(두께 50㎚)/기재의 층 구성으로 이루어지는 적층체를 제작하여, 이러한 적층체로부터 20㎜ 각(角)의 시료를 잘라내고, 이 시료를, 염화 제2철이 1질량%, 잔부가 물로 이루어지는 에칭액에 침지시켰다. 그리고 기재 상에 형성한 흑화막이 완전하게 용해될 때까지의 시간을 측정하여, 하기 평가 기준으로 평가했다. 그 결과를 표 1, 표 2에 나타낸다.A laminate consisting of a layered structure of blackening film (thickness 50 nm)/substrate was produced, a 20 mm square sample was cut from this laminate, and this sample was mixed with 1 mass% of ferric chloride and the remainder. It was immersed in an etching solution made of water. Then, the time until the blackening film formed on the substrate was completely dissolved was measured and evaluated based on the following evaluation criteria. The results are shown in Tables 1 and 2.
○: 5∼10초에 전량 용해된 경우○: When the entire amount is dissolved in 5 to 10 seconds
×: 상기 이외의 경우×: Cases other than the above
표 1, 표 2의 평가 결과로부터 다음의 점을 알 수 있다.The following points can be seen from the evaluation results in Tables 1 and 2.
비교예 1∼10은, 흑화막을 단(單)금속의 산화물로 구성한 예이다. 비교예 1∼10에서는, Cu, Ni, Co, W, Cr의 어느 것의 단금속을 이용하여 흑화막이 구성되어 있다. 반사율에 대해서는, Co 혹은 W를 이용한 비교예 5∼8에 있어서 양호한 결과가 얻어지고 있지만, 이들 비교예 5∼8은 내환경 시험 특성의 평가 결과가 「×」이다. 또한 Cu 이외의 단금속을 이용한 예에서는 에칭성의 평가도 「×」이다.Comparative examples 1 to 10 are examples in which the blackening film was composed of an oxide of a single metal. In Comparative Examples 1 to 10, blackening films were formed using any of Cu, Ni, Co, W, and Cr. Regarding reflectance, good results were obtained in Comparative Examples 5 to 8 using Co or W, but the evaluation results of environmental resistance test characteristics in Comparative Examples 5 to 8 were “×”. Additionally, in the example using a single metal other than Cu, the evaluation of etching properties was also “×”.
비교예 11∼18은, 흑화막을 Cu와 다른 1종의 금속으로 이루어지는 합금의 산화물로 구성한 예이다. CuNi 합금(비교예 11, 12) 및 CuCo 합금(비교예 13, 14)의 경우에, 내환경 시험 특성은 개선되지만, 아직 반점 변색이 생기기 때문에 목표로 하는 1000시간 이상의 내용 시간은 얻어지고 있지 않다.Comparative Examples 11 to 18 are examples in which the blackening film was composed of an oxide of an alloy consisting of Cu and one type of metal other than Cu. In the case of CuNi alloy (Comparative Examples 11 and 12) and CuCo alloy (Comparative Examples 13 and 14), the environmental test characteristics are improved, but the target service life of 1000 hours or more is not achieved because spot discoloration still occurs. .
비교예 19∼28은, 흑화막을 CuNiCo 합금의 산화물로 구성한 예이지만, 어느 것의 원소의 비율이 본 발명의 청구의 범위와 상이하다. O의 비율 (x)가 20at%로 본 발명의 하한값보다도 낮은 비교예 19∼22 및 비교예 24∼27은, 반사율의 평가가 「×」로 목표의 반사율 억제 효과가 얻어지고 있지 않다.Comparative Examples 19 to 28 are examples in which the blackening film is composed of oxide of CuNiCo alloy, but the ratio of certain elements is different from the claims of the present invention. In Comparative Examples 19 to 22 and Comparative Examples 24 to 27, where the O ratio (x) is 20 at%, which is lower than the lower limit of the present invention, the reflectance evaluation was “×”, and the target reflectance suppression effect was not obtained.
비교예 22, 23은, Ni의 비율 (b)가 70at%로 본 발명의 상한값을 상회한 예이다. 이들 예에서는 Ni의 비율이 높기 때문에 반점 변색이 생겨, 내환경 시험 특성의 평가가 「×」였다.Comparative Examples 22 and 23 are examples in which the Ni ratio (b) was 70 at%, which exceeded the upper limit of the present invention. In these examples, because the proportion of Ni was high, spotty discoloration occurred, and the evaluation of the environmental resistance test characteristics was "×".
비교예 27, 28은, Ni의 비율 (b)가 5at%로 본 발명의 하한값을 하회한 예이다. 이들 예에 있어서도 막면의 변색이 생겨, 내환경 시험 특성의 평가가 「×」였다.Comparative Examples 27 and 28 are examples in which the Ni ratio (b) was 5 at%, which was below the lower limit of the present invention. In these examples as well, discoloration of the film surface occurred, and the evaluation of the environmental resistance test characteristics was “×”.
이상과 같이 각 비교예에 있어서는, 반사율, 내환경 시험 특성의 적어도 어느 한쪽의 평가가 목표 미달이었다.As described above, in each comparative example, the evaluation of at least one of the reflectance and environmental test characteristics fell short of the target.
이에 대하여, CuNiCo 합금의 산화물로 이루어지고, 구성 원소의 비율이 본 발명의 규정을 만족하는 흑화막을 구비한 실시예 1∼27에 대해서는, 반사율 및 내환경 시험 특성의 어느 평가도 양호한 결과가 얻어지고 있다.On the other hand, for Examples 1 to 27, which are made of CuNiCo alloy oxide and have blackening films whose ratio of constituent elements satisfies the provisions of the present invention, good results were obtained in both evaluations of reflectance and environmental resistance test characteristics. there is.
각 실시예에 대해서 더욱 상세하게 보면, 전기비저항과 에칭성에 대해서는 트레이드 오프의 관계에 있고, 실시예 1∼3, 실시예 10∼12, 실시예 19∼21에서 나타내는 바와 같이 O의 비율 (x)를 30≤x<40으로 하면, Cu 등의 금속 배선의 에칭액으로서 널리 사용되고 있는 염화 제2철로 에칭 가능한 흑화막을 얻을 수 있고, 또한 실시예 4∼9, 실시예 13∼18, 실시예 22∼27에서 나타내는 바와 같이 O의 비율 (x)를 40≤x≤50으로 하면, 전기비저항이 1Ω·㎝ 미만으로 억제된 흑화막을 얻을 수 있는 것을 알 수 있다.Looking at each Example in more detail, there is a trade-off relationship between electrical resistivity and etching property, and as shown in Examples 1 to 3, Examples 10 to 12, and Examples 19 to 21, the ratio of O (x) When set to 30 ≤ As shown in , if the O ratio (x) is set to 40≤x≤50, it can be seen that a blackening film with electrical resistivity suppressed to less than 1Ω·cm can be obtained.
이상 본 발명의 실시 형태 및 실시예에 대해서 상세하게 설명했지만, 이는 어디까지나 일 예시이다. 본 발명은 그의 취지를 일탈하지 않는 범위에 있어서 여러 가지 변경을 더한 태양으로 실시 가능하다.Although the embodiments and examples of the present invention have been described in detail above, this is only an example. The present invention can be implemented with various modifications without departing from its spirit.
본 출원은, 2022년 4월 13일 출원의 일본특허출원 2022-066558에 기초하는 것으로서, 그의 내용은 여기에 참조로서 취입된다.This application is based on Japanese Patent Application No. 2022-066558, filed on April 13, 2022, the contents of which are incorporated herein by reference.
Claims (4)
상기 x가 30≤x<40인 것을 특징으로 하는, 흑화막.According to paragraph 2,
A blackening film, characterized in that x is 30≤x<40.
상기 x가 40≤x≤50인 것을 특징으로 하는, 흑화막.According to paragraph 2,
Blackening film, characterized in that x is 40≤x≤50.
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JP2016216797A (en) | 2015-05-25 | 2016-12-22 | 住友金属鉱山株式会社 | Alloy target for sputtering |
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