KR20230140302A - Display apparatus and manufacturing method of the same - Google Patents

Abstract

A display device according to an embodiment of the present specification includes a substrate including a plurality of subpixels, a first electrode located on each of the plurality of subpixels, nanopatterns disposed on the first electrode, a first electrode, and nanopatterns. It may include an organic layer disposed on the organic layer, and a second electrode disposed on the organic layer.

Description

Display device and method of manufacturing the same {DISPLAY APPARATUS AND MANUFACTURING METHOD OF THE SAME}

This specification relates to a display device and a method of manufacturing the same.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Accordingly, in recent years, Liquid Crystal Display (LCD), Organic Light Emitting Display (OLED), Micro Light Emitting Diode (Micro LED Display), and Quantum Dot display devices have been developed. Display devices such as Display (QD) are being used.

A display device is a display device that outputs light using light-emitting elements and includes a display panel provided with light-emitting elements.

Display panels can be divided into a top emission method, a bottom emission method, or a dual emission method, depending on the direction in which light is emitted.

Among these, in the case of a top-emitting display panel, a reflective electrode is included at the anode of the light-emitting element. In such a top emitting display panel, there is a problem in that external light incident from the outside is reflected by the reflective electrode of the anode, thereby deteriorating the viewing characteristics.

The content of the background technology described above is technical information that the inventor of this specification possessed for the derivation of this specification or was acquired in the process of deriving this specification, and must be regarded as known technology disclosed to the general public before the specification of this specification. It is impossible.

The object of this specification is to provide a display device that can prevent reflection by external light and a manufacturing method thereof.

In addition to the tasks of the present specification mentioned above, other features and advantages of the present specification are described below, or can be clearly understood by those skilled in the art from such descriptions and descriptions. will be.

A display device according to an embodiment of the present specification includes a substrate including a plurality of subpixels, a first electrode located on each of the plurality of subpixels, nanopatterns disposed on the first electrode, a first electrode, and nanopatterns. It may include an organic layer disposed on the organic layer, and a second electrode disposed on the organic layer.

A method of manufacturing a display device according to an embodiment of the present specification includes forming a first electrode on a substrate, forming a protective material pattern on the first electrode, and forming nanopatterns using the protective material pattern. , forming an organic layer covering the first electrode and the nanopatterns, and forming a second electrode covering the organic layer.

The display device and its manufacturing method according to the present specification can reduce reflectance by external light due to a difference in refractive index between the nanopattern and the organic layer by forming a nanopattern on the anode electrode.

In addition to the effects of the present specification mentioned above, other features and advantages of the present specification are described below, or can be clearly understood by those skilled in the art from such descriptions and descriptions.

1 is a diagram schematically showing a display device according to an embodiment of the present specification.
Figure 2 is a cross-sectional view taken along line II' in Figure 1.
FIG. 3 is a diagram showing a light emitting device in part A of FIG. 2 according to an embodiment of the present specification.
FIG. 4 is a diagram showing a light emitting device in part A of FIG. 2 according to another embodiment of the present specification.
5A to 5C are diagrams for explaining the shape of a nanopattern according to an embodiment of the present specification.
FIGS. 6A to 6C are diagrams for explaining a reflection reduction phenomenon caused by nanopatterns according to an embodiment of the present specification.
7 to 10 are manufacturing process diagrams for explaining a method of forming a nanopattern according to an embodiment of the present specification.
11 to 15 are manufacturing process diagrams for explaining a method of forming a nanopattern according to another embodiment of the present specification.
16 are images for explaining a method of forming a nanopattern according to an embodiment of the present specification.
17 to 32 are manufacturing process diagrams for explaining a method of manufacturing a display device after nanopattern formation according to an embodiment of the present specification.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the various examples described in detail below along with the accompanying drawings. However, the present specification is not limited to the various examples disclosed below and will be implemented in various different forms, and the various examples in the present specification only serve to ensure that the disclosure of the present specification is complete and that the technical idea of the present specification pertains to the technical field. It is provided to fully inform those skilled in the art of the scope of the technical idea of the present specification, and examples of the present specification are only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining various examples of the present specification are illustrative and are not limited to the matters shown in the drawings of the present specification. Like reference numerals refer to like elements throughout the specification. Additionally, when describing examples of the present specification, if it is determined that detailed descriptions of related known technologies may unnecessarily obscure the gist of the present specification, the detailed descriptions will be omitted.

When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise.

When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used.

In the case of a description of a temporal relationship, for example, if a temporal relationship is described as 'after', 'successfully after', 'after', 'before', etc., 'immediately' or 'directly' Unless used, non-consecutive cases may also be included.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical idea of the present specification.

“First horizontal axis direction”, “second horizontal axis direction”, and “vertical axis direction” should not be interpreted as only geometric relationships in which the relationship between each other is vertical, and the scope within which the configuration of the present specification can function functionally It can mean having a broader direction than within.

The term “at least one” should be understood to include all possible combinations from one or more related items. For example, “at least one of the first, second, and third items” means each of the first, second, or third items, as well as two of the first, second, and third items. It can mean a combination of all items that can be presented from more than one.

Each feature of the various examples of the present specification can be partially or entirely combined or combined with each other, and various technological interconnections and operations are possible, and each example can be implemented independently of each other or together in a related relationship. .

Hereinafter, a preferred example of a display device and its manufacturing method according to an embodiment of the present specification will be described in detail with reference to the attached drawings. In adding reference numerals to components in each drawing, identical components may have the same reference numerals as much as possible even if they are shown in different drawings. Additionally, the scale of the components shown in the attached drawings has a different scale from the actual scale for convenience of explanation, and is therefore not limited to the scale shown in the drawings.

FIG. 1 is a diagram schematically showing a display device according to an embodiment of the present specification, and FIG. 2 is a cross-sectional view taken along line II' of FIG. 1.

Referring to FIG. 1, a display device 100 according to an embodiment of the present specification includes a display panel 110, an image processor 120, a timing controller 130, a data driver 140, a scan driver 150, and It may include a power supply unit 160.

The display panel 110 may display an image in response to a data signal (DATA) supplied from the data driver 140, a scan signal supplied from the scan driver 150, and power supplied from the power supply unit 160.

The display panel 110 may include a plurality of pixels (PX, Pixel) arranged in each intersection area of a plurality of gate lines GL and a plurality of data lines DL. Each of the plurality of pixels PX may include a plurality of subpixels SP. The structure of the subpixel SP may vary depending on the type of display device 100.

The display panel 110 can be divided into a display area (AA) where a plurality of pixels (PX) are arranged to display an image, and a non-display area (NA) around the display area (AA). The scan driver 150 may be mounted in the non-display area (NA) of the display panel 110. Additionally, the non-display area (NA) may include a pad area.

The image processing unit 120 may output a data enable signal (DE) in addition to a data signal (DATA) supplied from the outside. In addition to the data enable signal DE, the image processor 120 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal, but these signals are omitted for convenience of explanation.

The timing control unit 130 may receive a data signal (DATA) in addition to a driving signal from the image processing unit 120. The driving signal may include a data enable signal (DE). Alternatively, the driving signal may include a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing control unit 130 includes a data timing control signal (DDC) for controlling the operation timing of the data driver 140 and a gate timing control signal (GDC) for controlling the operation timing of the scan driver 150 based on the driving signal. can be output.

The data driver 140 samples and latches the data signal (DATA) supplied from the timing control unit 130 in response to the data timing control signal (DDC) supplied from the timing control unit 130, converts it to a gamma reference voltage, and outputs it. You can.

The data driver 140 may output a data signal (DATA) through the data lines (DL). The data driver 140 may be implemented in the form of an integrated circuit (IC). For example, the data driver 140 may be electrically connected to a pad area disposed in the non-display area (NA) of the display panel 110 through a flexible circuit film.

The scan driver 150 may output a scan signal in response to the gate timing control signal (GDC) supplied from the timing control unit 130. The scan driver 150 may output a scan signal through the gate lines GL. The scan driver 150 may be implemented in the form of an integrated circuit (IC) or may be implemented in the display panel 110 using a gate in panel (GIP) method.

The power supply unit 160 may output a high potential voltage and a low potential voltage for driving the display panel 110. The power supply unit 160 may supply a high potential voltage to the display panel 110 through a first power line (EVDD) (driving power line or pixel power line) and a low potential voltage through a second power line (EVSS) ( It can be supplied to the display panel 110 through an auxiliary power line or a common power line.

Referring again to the enlarged portion of one pixel (PX) in FIG. 1, one pixel (PX) may include a plurality of subpixels (SP) adjacent to each other. The plurality of subpixels SP may include a first subpixel SP1, a second subpixel SP2, and a third subpixel SP3. For example, the subpixels SP1, SP2, and SP3 may be formed in a top emission method, a bottom emission method, or a dual emission method depending on the structure. The subpixels SP1, SP2, and SP3 refer to units that can emit their own color with or without a specific type of color filter. Each subpixel SP1, SP2, and SP3 may include a light-emitting device that is a self-light emitting device (eg, an organic light-emitting device) and a thin film transistor (TR) for driving the light-emitting device.

For example, the first subpixel SP1 may emit red light, the second subpixel SP2 may emit green light, and the third subpixel SP3 may emit blue light. there is. However, the present specification is not necessarily limited to this, and may further include a subpixel that emits white light. Or, subpixels that emit at least two lights among red light, green light, blue light, yellow light, magenta light, and cyan light. It may be composed of: Additionally, the color type, arrangement type, and arrangement order of the subpixels SP1, SP2, and SP3 may be configured in various ways depending on light emission characteristics, device lifespan, and device specifications.

Referring to FIG. 2, the display device 100 according to an embodiment of the present specification includes a circuit layer 102 (or a thin film transistor array layer) on a substrate 101 including a plurality of subpixels SP1, SP2, and SP3. ), a planarization layer 103 (or overcoat layer), a light emitting device 200, and a bank layer 105.

The substrate 101 is a base substrate and may be made of glass or plastic. For example, the substrate 101 may be made of a plastic material such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polycarbonate (PC), and may have flexible characteristics.

In the circuit layer 102, circuit elements including various signal lines, thin film transistors (TR), storage capacitors, etc. may be formed for each of the plurality of subpixels SP1, SP2, and SP3. The signal lines include a gate line (GL), a data line (DL), a first power line (EVDD) (driving power line or pixel power line), a second power line (EVSS) (auxiliary power line or common power line), and A reference line may be included, and the thin film transistor (TR) may include a driving thin film transistor, a switching thin film transistor, and a sensing thin film transistor. For example, the circuit layer 102 may include at least two insulating films and metal or active layers between the at least two insulating films. For example, the circuit layer 102 includes a light blocking layer, a buffer layer, an active layer constituting a thin film transistor (TR), a gate electrode, a source electrode, and a drain electrode, a gate insulating film, an interlayer insulating film, a passivation layer, etc. It may be included, but this specification is not limited thereto.

The planarization layer 103 may perform the function of planarizing the top surface of the circuit layer 102. The planarization layer 103 may be made of an organic insulating material. For example, the planarization layer 103 is made of at least one organic material such as photo acryl, polyimide, benzocyclobutene resin, and acrylate resin. It can be done.

On the planarization layer 103, a first electrode 201 (anode electrode or pixel electrode), an organic layer 202 (light emitting layer or organic light emitting layer), and a second electrode 203 (cathode electrode or common electrode) constituting the light emitting device 200 are provided. electrodes) may be sequentially stacked.

The first electrode 201 (anode electrode or pixel electrode) may be disposed at a position corresponding to each of the plurality of subpixels SP1, SP2, and SP3. The first electrode 201 may be connected to the drain electrode of the thin film transistor (TR) through a contact hole penetrating the planarization layer 103 and the circuit layer 102. For example, the first electrode 201 may be connected to a driving thin film transistor disposed on the circuit layer 102.

The first electrode 201 may be formed of a metal, an alloy thereof, or a combination of a metal and an oxide metal. For example, the first electrode 201 may be formed in a multi-layer structure including a transparent electrode layer made of a transparent conductive film and a reflective electrode layer made of an opaque conductive film with high reflection efficiency. The transparent electrode layer of the first electrode 201 is made of a material with a relatively high work function value, such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is reflective. The electrode layer is any one selected from the group consisting of silver (Ag), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), nickel (Ni), chromium (Cr), or tungsten (W). Alternatively, it may be composed of a single layer or multiple layers of these alloys. For example, the first electrode 201 may be formed in a structure in which a transparent electrode layer, a reflective electrode layer, and a transparent electrode layer are sequentially stacked, or in a structure in which a transparent electrode layer and a reflective electrode layer are sequentially stacked. However, this specification is not limited to this.

A bank layer 105 may be disposed on the first electrode 201 and the planarization layer 103. The bank layer 105 may cover an edge portion of the first electrode 201 and define an opening of the first electrode 201. For example, the bank layer 105 may be made of an inorganic material such as a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a silicon oxynitride film (SiO _x N _y ). Alternatively, the bank layer 105 may be made of an organic material such as polyimide, acrylate, or benzocyclobutene series resin. According to an embodiment of the present specification, the bank layer 105 may be made of an inorganic material that is relatively resistant to etching, but is not limited thereto. The opening of the first electrode 201 exposed by the bank layer 105 may be defined as a light emitting area.

An organic layer 202 (light-emitting layer or organic light-emitting layer) may be disposed on the first electrode 201 and the bank layer 105. The organic layer 202 is disposed on the opening of the first electrode 201 of each of the plurality of subpixels SP1, SP2, and SP3, the side surface of the bank layer 105, and at least a portion of the top surface of the bank layer 105. It can be. For example, the organic layer 202 may be disposed at positions corresponding to each of the plurality of subpixels SP1, SP2, and SP3 and may be spaced apart from each other on the upper surface of the bank layer 105. Additionally, the organic layer 202 may be made of an organic material that emits light of different colors corresponding to each of the plurality of subpixels SP1, SP2, and SP3. For example, the organic layer 202 disposed in each of the plurality of subpixels SP1, SP2, and SP3 may be made of an organic material that emits red light, green light, and blue light, but is not necessarily limited thereto.

A second electrode 203 (cathode electrode or common electrode) may be disposed on the organic layer 202 and the bank layer 105. The second electrode 203 may be a common layer commonly formed in the plurality of subpixels SP1, SP2, and SP3. For example, the second electrode 203 is made of a transparent metal material such as indium tin oxide (ITO) or indium zinc oxide (IZO) that can transmit light. material; TCP), or a translucent metal material such as silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), or an alloy thereof that has a thickness thin enough to allow light to pass through. It may be made of (semi-transmissive conductive material).

According to an embodiment of the present specification, in order to prevent reflection caused by external light incident on the front of the display device 100, the light emitting device 200 may include randomly arranged nanopatterns. Nanopatterns for anti-reflection may be disposed between the first electrode 201 and the second electrode 203. Nanopatterns according to an embodiment of the present specification are disposed on the first electrode 201, an organic layer 202 is disposed on the first electrode 201 and the nanopatterns, and a second electrode is disposed on the organic layer 202. By arranging 203, external light incident from the outside is diffusely reflected by the nanopatterns, thereby reducing the reflectance of external light.

FIG. 3 is a diagram showing a light emitting device in part A of FIG. 2 according to an embodiment of the present specification.

Referring to FIG. 3 in conjunction with FIG. 2 , the display device 100 according to an embodiment of the present specification may include nanopatterns 300 disposed on the first electrode 201 . The nanopatterns 300 may be placed in direct contact with the upper surface 201a of the first electrode 201.

The first electrode 201 is disposed on the planarization layer 103 and may be disposed at positions corresponding to each of the plurality of subpixels SP1, SP2, and SP3. A bank layer 105 may be disposed on the first electrode 201 and the planarization layer 103. The bank layer 105 may cover an edge portion of the first electrode 201 and define an opening 201b of the first electrode 201 that exposes the top surface 201a of the first electrode 201.

An organic layer 202 (light-emitting layer or organic light-emitting layer) may be disposed on the first electrode 201 and the bank layer 105. Additionally, a second electrode 203 (cathode electrode or common electrode) may be disposed on the organic layer 202.

Nanopatterns 300 according to an embodiment of the present specification may be randomly disposed on the upper surface 201a of the first electrode 201 exposed by the opening 201b of the first electrode 201. The nanopatterns 300 may be formed randomly in shape and arrangement on the first electrode 201. The nanopatterns 300 may be made of a different material from the first electrode 201. For example, the nanopatterns 300 may be made of a protective material used in the manufacturing process of the display device 100. For example, the protective material may be a material that functions as an etch stopper for the organic layer or as a pattern mask in the process of patterning the organic layer of the display device 100. The protective material may include a water-based polymer material or a fluorine-based polymer material. For example, the water-based polymer material of the protective material may be a hydrophilic organic material such as polyethylene glycol (PEG), polyvinyl alcohol (PVA), or polyvinyl acetate (PVAc), and the fluorine-based polymer material may be a carbon-carbon bond. It may be a fluoropolymer material that has a continuous chain structure and contains a large amount of fluorine (F) in the functional group (or functional group).

According to an embodiment of the present specification, a protective material pattern is formed on the first electrode 201, and the protective material pattern formed on the first electrode 201 is dry-etched to form a nanopattern with a random shape and arrangement. Fields 300 may be formed. For example, the dry etching process may include plasma treatment.

The nanopattern 300 may be formed in a random circular or cylindrical three-dimensional structure. In this specification, a random circular or cylindrical shape may mean a shape in which some areas are irregularly depressed or protruded in a circular or cylindrical shape. The nanopattern 300 may have a length of at least one dimension of 10 nm or less in a three-dimensional structure. Additionally, the longitudinal length of the surface of the nanopattern 300 in contact with the first electrode 201 may be smaller than the longitudinal length in other dimensions except for the surface in contact with the first electrode 201. For example, the nanopattern 300 may include a moth-eye shape that is advantageous for diffuse reflection and can reduce reflectance. The nanopatterns 300 can reduce the reflectance of external light reflected through the first electrode 201 by causing the incident external light to be diffusely reflected due to their random shape and arrangement.

According to an embodiment of the present specification, an organic layer 202 (light-emitting layer or organic light-emitting layer) may be disposed on the first electrode 201 on which the nanopatterns 300 are disposed and the bank layer 105. The organic layer 202 includes the top surface 201a of the first electrode 201 exposed by the opening 201b of the first electrode 201, the side surface of the bank layer 105, and the top surface of the bank layer 105. It may be placed in at least part of . The organic layer 202 may cover the nanopatterns 300 disposed on the top surface 201a of the first electrode 201. The organic layer 202 may completely cover the nanopatterns 300 and surround the nanopatterns 300 together with the first electrode 201 . The organic layer 202 may be made of a different material from the nanopatterns 300 . Additionally, the nanopatterns 300 and the organic layer 202 may have different refractive indices. For example, the nanopattern 300 may have a higher refractive index than the organic layer 202 .

According to an embodiment of the present specification, a second electrode 203 (cathode electrode or common electrode) may be disposed on the organic layer 202 and the bank layer 105. The second electrode 203 may be disposed to cover the top surface of the organic layer 202 and the top surface of the bank layer 105. The second electrode 203 may be a common layer commonly formed in the plurality of subpixels SP1, SP2, and SP3. Additionally, the second electrode 203 may be a transparent electrode or an opaque electrode capable of transmitting light.

According to an embodiment of the present specification, when the nanopattern 300 having a higher refractive index than the refractive index of the organic layer 202 is disposed on the first electrode 201, the organic layer 202 on the first electrode 201 The overall refractive index may be changed gradually or irregularly by the nanopattern 300. This means that the incident external light does not recognize the nanopattern 300, which has a size smaller than the wavelength of visible light, and proceeds toward a medium with a high refractive index, that is, the nanopattern 300. Since the refractive index changes gradually or irregularly due to the structural characteristics of the pattern 300, the occurrence of reflection can be suppressed.

FIG. 4 is a diagram showing a light emitting device in part A of FIG. 2 according to another embodiment of the present specification.

Referring to FIG. 4 in conjunction with FIG. 2 , the display device 100 according to another embodiment of the present specification includes nanopatterns 300 disposed on at least a portion of the first electrode 201 and the bank layer 105. may include. The nanopatterns 300 may be placed in direct contact with the top surface 201a of the first electrode 201 and the bank layer 105.

The first electrode 201 is disposed on the planarization layer 103 and may be disposed at positions corresponding to each of the plurality of subpixels SP1, SP2, and SP3. A bank layer 105 may be disposed on the first electrode 201 and the planarization layer 103. The bank layer 105 may cover an edge portion of the first electrode 201 and define an opening 201b of the first electrode 201 that exposes the top surface 201a of the first electrode 201.

An organic layer 202 (light-emitting layer or organic light-emitting layer) may be disposed on the first electrode 201 and the bank layer 105. Additionally, a second electrode 203 (cathode electrode or common electrode) may be disposed on the organic layer 202.

Nanopatterns 300 according to another embodiment of the present specification include the top surface 201a of the first electrode 201 exposed by the opening 201b of the first electrode 201, and the top surface of the bank layer 105. It may be randomly disposed on at least a portion of 105a and the side 105b of the bank layer 105. The nanopatterns 300 may be randomly formed in shape and arrangement on the first electrode 201, the top surface 105a of the bank layer 105, and the side surface 105b of the bank layer 105. The nanopatterns 300 may be made of a different material from the first electrode 201 and the bank layer 105. For example, the nanopatterns 300 may be made of a protective material used in the manufacturing process of the display device 100. For example, the protective material may be a material that functions as an etch stopper for the organic layer or as a pattern mask in the process of patterning the organic layer of the display device 100. The protective material may include a water-based polymer material or a fluorine-based polymer material. For example, the water-based polymer material of the protective material may be a hydrophilic organic material such as polyethylene glycol (PEG), polyvinyl alcohol (PVA), or polyvinyl acetate (PVAc), and the fluorine-based polymer material may be a carbon-carbon bond. It may be a fluoropolymer material that has a continuous chain structure and contains a large amount of fluorine (F) in the functional group (or functional group).

According to another embodiment of the present specification, a protective material pattern is formed on at least a portion of the first electrode 201, the side surface 105b of the bank layer 105, and the top surface 105a of the bank layer 105, By dry etching the protective material pattern, nanopatterns 300 with random shapes and arrangements can be formed. For example, the dry etching process may include plasma treatment.

The nanopattern 300 may be formed in a random circular or cylindrical three-dimensional structure. In this specification, a random circular or cylindrical shape may mean a shape in which some areas are irregularly depressed or protruded in a circular or cylindrical shape. The nanopattern 300 may have a length of at least one dimension of 10 nm or less in a three-dimensional structure. In addition, the nanopattern 300 has a long direction length of the surface in contact with at least one of the first electrode 201, the top surface 105a of the bank layer 105, and the side surface 105b of the bank layer 105. It may be smaller than the longitudinal length in any dimension except one tangent surface. For example, the nanopattern 300 may include a moth-eye shape that is advantageous for diffuse reflection and can reduce reflectance. The nanopatterns 300 can reduce the reflectance of external light reflected through the first electrode 201 by causing the incident external light to be diffusely reflected due to their random shape and arrangement.

According to another embodiment of the present specification, an organic layer 202 (light-emitting layer or organic light-emitting layer) may be disposed on the first electrode 201 and the bank layer 105 on which the nanopatterns 300 are disposed. The organic layer 202 includes the top surface 201a of the first electrode 201 exposed by the opening 201b of the first electrode 201, the side surface 105b of the bank layer 105, and the bank layer 105. It may be disposed on at least a portion of the upper surface 105a. The organic layer 202 includes nanopatterns 300 disposed on the top surface 201a of the first electrode 201, the side surface 105b of the bank layer 105, and the top surface 105a of the bank layer 105. It can be covered. For example, the nanopatterns 300 on the upper surface 105a of the bank layer 105 may be arranged up to a portion that overlaps the edge portion of the first electrode 201 covered by the bank layer 105. Additionally, the organic layer 202 may be disposed to completely cover the nanopatterns 300 disposed on the upper surface 105a of the bank layer 105. The organic layer 202 may completely cover the nanopatterns 300 and surround the nanopatterns 300 together with the first electrode 201 and the bank layer 105. The organic layer 202 may be made of a different material from the nanopatterns 300 . Additionally, the nanopatterns 300 and the organic layer 202 may have different refractive indices. For example, the nanopattern 300 may have a higher refractive index than the organic layer 202 .

According to another embodiment of the present specification, the second electrode 203 (cathode electrode or common electrode) may be disposed on the organic layer 202 and the bank layer 105. The second electrode 203 may be disposed to cover the top surface of the organic layer 202 and the top surface 105a of the bank layer 105. The second electrode 203 may be a common layer commonly formed in the plurality of subpixels SP1, SP2, and SP3. Additionally, the second electrode 203 may be a transparent electrode or an opaque electrode capable of transmitting light.

According to another embodiment of the present specification, when the nanopattern 300 having a higher refractive index than the refractive index of the organic layer 202 is disposed on at least a portion of the first electrode 201 and the bank layer 105, the first electrode 201 The overall refractive index of the organic layer 202 on the (201) and bank layer 105 may be gradually or irregularly changed by the nanopattern 300. This means that the incident external light does not recognize the nanopattern 300, which has a size smaller than the wavelength of visible light, and proceeds toward a medium with a high refractive index, that is, the nanopattern 300. Since the refractive index changes gradually or irregularly due to the structural characteristics of the pattern 300, the occurrence of reflection can be suppressed.

5A to 5C are diagrams for explaining the shape of a nanopattern according to an embodiment of the present specification.

Referring to FIGS. 5A to 5C , the nanopattern 300 according to an embodiment of the present specification may be formed in a random circular or cylindrical three-dimensional structure.

As shown in FIG. 5A, the nanopattern 300 may be formed into a random circle with a three-dimensional structure. In this specification, random circularity may mean a shape in which some areas are irregularly depressed or protruding from the circular shape. The nanopattern 300 may have a length of at least one dimension of 10 nm or less in a three-dimensional structure. For example, the nanopattern 300 may have a longitudinal length of 10 nm or less in at least one of the X-dimension, Y-dimension, and Z-dimension. If the nanopattern 300 has a random circular shape, the longitudinal lengths in the X-dimension, Y-dimension, and Z-dimension may be approximately similar to each other. The nanopattern 300 may be in contact with the X-Y dimensional plane, and the long direction length of the surface in contact with the X-Y dimensional plane may be smaller than the long direction lengths in the

As shown in FIGS. 5B and 5C, the nanopattern 300 may be formed in a random cylindrical (or oval) shape with a three-dimensional structure. In this specification, a random cylindrical shape may mean a cylindrical shape in which some areas are irregularly depressed or protruded. The nanopattern 300 may have a length of at least one dimension of 10 nm or less in a three-dimensional structure. For example, the nanopattern 300 may have the longest longitudinal length in the X-dimension or Y-dimension, as shown in FIG. 5B, and the longitudinal length in the The nanopattern 300 may be in contact with the X-Y dimensional plane, and the long direction length of the surface in contact with the X-Y dimensional plane may be smaller than the long direction length in the In addition, the nanopattern 300 may have the longest longitudinal length in the Z dimension, as shown in FIG. 5C, and the longitudinal length in the Z dimension may be 10 nm or less. The nanopattern 300 may be in contact with the X-Y dimensional plane, and the longitudinal length of the surface in contact with the X-Y dimensional plane may be smaller than the longitudinal length in the Z dimension.

The nanopattern 300 according to an embodiment of the present specification may be made of a protective material used in the manufacturing process of the display device 100. The protective material may be a material that does not cause damage even if it is close to the organic layer of the display device 100. For example, the protective material may be a material that functions as an etch stopper for the organic layer or as a pattern mask in the process of patterning the organic layer of the display device 100. Additionally, the nanopattern 300 may be formed by dry etching a protective material, and the dry etching process may include plasma treatment. The nanopattern 300 may be a residue of a protective material whose strength has increased as the protective material has been denatured by plasma treatment. For example, the nanopattern 300 may become conductive due to plasma denaturation. The shape, size, and distribution density of the nanopattern 300 may be controlled according to dry etching process conditions.

FIGS. 6A to 6C are diagrams for explaining a reflection reduction phenomenon caused by nanopatterns according to an embodiment of the present specification. Figure 6a shows the optical path when the nano-pattern structure is not placed on the first electrode 201, and Figure 6b shows the light path when the hemispherical pattern 300' is placed on the first electrode 201. Figure 6c shows the optical path when the nanopattern 300 according to an embodiment of the present specification is disposed on the first electrode 201.

Referring to FIG. 6A, when the nano-pattern structure is not disposed on a reflector such as the first electrode 201, the incident external light L1 is reflected (R1), that is, totally reflected, at the first electrode 201 and is reflected again. It may have an optical path directed to the outside.

Referring to FIG. 6B, a hemispherical pattern 300' may be disposed on the same reflector as the first electrode 201. In this specification, the hemispherical pattern 300' may mean a shape in which the longitudinal length of the surface in contact with the first electrode 201 is longer than the longitudinal length in other dimensions. When the hemispherical pattern 300' is disposed on the first electrode 201, the incident external light L2 is first refracted r1 at the interface of the hemispherical pattern 300', and is first refracted. Light is reflected (R2) from the first electrode 201 and heads outward, and a second refraction (r2) occurs at the interface of the hemispherical pattern 300', thereby forming a light path that heads outward. Because this has a double refraction phenomenon, the reflectance can be reduced compared to a case without a pattern structure.

Referring to FIG. 6C, a nanopattern 300 according to an embodiment of the present specification may be disposed on a reflector such as the first electrode 201. The nanopattern 300 according to an embodiment of the present specification has a long direction length (a1) on the surface in contact with the first electrode 201 and a long direction length (a2) in other dimensions excluding the surface in contact with the first electrode 201. ) may be smaller than When the nanopattern 300 is disposed on the first electrode 201, the incident external light L3 is first refracted (r1) at the interface on one side of the nanopattern 300, and is first refracted. The light is secondly refracted (r2) at the interface on the other side of the nanopattern 300, and the secondly refracted light is reflected (R3) at the first electrode 201 and directed outward, and then again into the nanopattern. A third refraction (r3) occurs at the interface of the other side of (300), thereby allowing a light path to be directed to the outside. Because it has a triple refraction phenomenon, it can induce diffuse reflection of light, and the reflectance can be greatly reduced by the diffusely reflected light path.

Hereinafter, a method of manufacturing a display device according to an embodiment of the present specification will be described in more detail with reference to FIGS. 7 to 32.

FIGS. 7 to 10 are manufacturing process diagrams for explaining a method of forming a nanopattern according to an embodiment of the present specification, and FIGS. 11 to 15 illustrate a method of forming a nanopattern according to another embodiment of the present specification. These are manufacturing process diagrams for the following, Figure 16 is an image for explaining a method of forming a nano pattern according to an embodiment of the present specification, and Figures 17 to 32 show a display device after forming a nano pattern according to an embodiment of the present specification. These are manufacturing process charts to explain the manufacturing method.

First, if FIGS. 7 to 10 are described in conjunction with FIG. 2, the method of forming a nanopattern according to an embodiment of the present specification is manufactured in the form of a light emitting device according to an embodiment of the present specification shown in FIG. 3. It's about how to do it.

As shown in FIG. 7, a circuit layer 102 and a planarization layer 103 may be formed on the substrate 101, and a first electrode 201 may be formed on the planarization layer 103. Alternatively, the first electrode 201 and the bank layer 105 may be formed on the planarization layer 103.

The first electrode 201 may be disposed at a position corresponding to each of the plurality of subpixels SP1, SP2, and SP3. For example, the first electrode 201 may be formed in a multi-layer structure including a transparent electrode layer made of a transparent conductive film and a reflective electrode layer made of an opaque conductive film with high reflection efficiency. The transparent electrode layer of the first electrode 201 is made of a material with a relatively high work function value, such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is reflective. The electrode layer is any one selected from the group consisting of silver (Ag), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), nickel (Ni), chromium (Cr), or tungsten (W). Alternatively, it may be composed of a single layer or multiple layers of these alloys. For example, the first electrode 201 may be formed in a structure in which a transparent electrode layer, a reflective electrode layer, and a transparent electrode layer are sequentially stacked, or in a structure in which a transparent electrode layer and a reflective electrode layer are sequentially stacked. However, the present specification is not necessarily limited thereto.

A bank layer 105 may be formed on the first electrode 201 and the planarization layer 103. The bank layer 105 may cover an edge portion of the first electrode 201 and define an opening of the first electrode 201. For example, the bank layer 105 may be made of an inorganic material such as a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a silicon oxynitride film (SiO _x N _y ). Alternatively, the bank layer 105 may be made of an organic material such as polyimide, acrylate, or benzocyclobutene series resin. According to an embodiment of the present specification, the bank layer 105 may be made of an organic material, but it may be made of an inorganic material because it needs to be added to prevent leakage current between the anode and the cathode, and relatively strong properties against etching are required. . The opening of the first electrode 201 exposed by the bank layer 105 may be defined as a light-emitting area of each of the plurality of subpixels SP1, SP2, and SP3. However, the present specification is not necessarily limited thereto.

As shown in FIG. 8, a protective material layer SL may be formed on the entire surface of the substrate 101 including the first electrode 201. Alternatively, a protective material layer SL may be formed on the entire surface of the substrate 101 including the first electrode 201 and the bank layer 105. The protective material layer SL may be formed in a non-flat structure on the first electrode 201 and the bank layer 105.

The protective material layer SL may be made of a material used in the manufacturing process of the display device 100. The protective material layer SL may be a material that does not cause damage even if it is close to the organic layer of the display device 100. For example, the protective material layer SL may be a material that can function as an etch stopper for the organic layer or as a pattern mask in the process of patterning the organic layer of the display device 100. The protective material layer SL may include a water-based polymer material or a fluorine-based polymer material. For example, the water-based polymer material of the protective material layer (SL) may be a hydrophilic organic material such as polyethylene glycol (PEG), polyvinyl alcohol (PVA), or polyvinyl acetate (PVAc), and the fluorine-based polymer material may be carbon. -It may be a fluoropolymer material that contains a large amount of fluorine (F) in the functional group (or functional group) while the carbon bonds are formed continuously in a chain structure.

The protective material layer SL may be formed using spin coating or slit coating techniques. Additionally, the protective material layer SL may be formed to have a thickness of approximately 1.0 μm to 2.0 μm. Additionally, the difference between the thickness of the protective material layer SL on the first electrode 201 and the protective material layer SL on the bank layer 105 may be approximately within 0.2 μm. However, the present specification is not necessarily limited to this, and the thickness of the protective material layer SL may be formed to an adjustable level through a dry etching process.

As shown in FIG. 9 , after the protective material layer SL is formed, a first dry etching process DE_1 may be performed to form a protective material pattern SL_P on the first electrode 201 . The protective material pattern (SL_P) is formed by performing a first dry etching (DE_1) on the protective material layer (SL) formed on the first electrode 201 and the bank layer 105, thereby exposing the first electrode 201 through the opening of the first electrode 201. 1 It can be formed by leaving some of the material of the protective material layer (SL) remaining on the electrode 201.

The first dry etching (DE_1) uses oxygen (O ₂ ), fluorine-based gas (SF ₆ ), or argon (Ar) alone or in a mixed gas to quickly proceed with the etching rate, thereby reducing the overall thickness of the protective material layer (SL). And, a protective material pattern (SL_P) for forming a nano pattern can be formed only on the first electrode 201. Additionally, the first dry etching DE_1 may be performed under conditions in which damage to the bank layer 105 can be minimized. The size of the nanopattern can be controlled by adjusting the thickness of the protective material pattern (SL_P) according to the conditions of the first dry etching (DE_1). The protective material pattern SL_P may have an even surface roughness.

As shown in FIG. 10, after the protective material pattern (SL_P) is formed, a second dry etching (DE_1) process may be performed to form the nanopattern 300 on the first electrode 201. The nanopattern 300 is formed by performing a second dry etching (DE_2) on the protective material pattern (SL_P) formed on the first electrode 201, thereby denaturing the protective material pattern (SL_P) on the first electrode 201 to form a three-dimensional structure. It can be formed in a random circular or cylindrical shape.

The second dry etching (DE_2) excludes the fluorine-based gas (SF ₆ ) included in the first dry etching (DE_1), and uses oxygen (O ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ), and nitrogen (N ₂ ), or by increasing the surface roughness of the protective material pattern (SL_P) by plasma treatment using argon (Ar) alone or mixed gas to denature the remaining material, forming a shape and shape on the first electrode 201. Nanopatterns 300 with random arrangement may be formed.

The nanopattern 300 according to an embodiment of the present specification may have at least one dimension length of 10 nm or less in a three-dimensional structure. Additionally, the longitudinal length of the surface of the nanopattern 300 in contact with the first electrode 201 may be smaller than the longitudinal length in other dimensions except for the surface in contact with the first electrode 201. For example, the nanopattern 300 may include a moth-eye shape that is advantageous for diffuse reflection and can reduce reflectance. The nanopatterns 300 can reduce the reflectance of external light reflected through the first electrode 201 by causing the incident external light to be diffusely reflected due to their random shape and arrangement.

Next, when FIGS. 11 to 15 are described in connection with FIG. 2, the method of forming a nanopattern according to another embodiment of the present specification is in the form of a light emitting device according to another embodiment of the present specification shown in FIG. 4. It relates to a method for manufacturing. In the following description, descriptions that overlap with the method of forming a nanopattern according to an embodiment of the present specification shown in FIGS. 7 to 10 will be omitted or simplified.

As shown in FIG. 11, a circuit layer 102 and a planarization layer 103 may be formed on the substrate 101, and a first electrode 201 may be formed on the planarization layer 103. Alternatively, the first electrode 201 and the bank layer 105 may be formed on the planarization layer 103.

As shown in FIG. 12, a protective material layer (SL) and a photoresist layer (PR) may be formed on the entire surface of the substrate 101 including the first electrode 201. Alternatively, a protective material layer (SL) and a photoresist layer (PR) may be formed on the entire surface of the substrate 101 including the first electrode 201 and the bank layer 105. The protective material layer (SL) and the photoresist layer (PR) may be formed in a non-flat structure on the first electrode 201 and the bank layer 105.

The photoresist layer (PR) formed on the protective material layer (SL) can be formed by selecting either a positive type or a negative type photoresist material. According to another embodiment of the present specification, the photoresist layer PR may be formed of a negative type photoresist material, but is not necessarily limited thereto.

As shown in FIG. 13, after the protective material layer SL and the photoresist layer PR are formed, a photoresist pattern PR_P that exposes a portion of the surface of the protective material layer SL may be formed. The photoresist pattern PR_P is disposed in a portion overlapping the first electrode 201, the side of the bank layer 105 centered on the first electrode 201, and at least a portion of the top surface of the bank layer 105. You can. The portion where the photoresist pattern PR_P is disposed may correspond to the portion where the nanopatterns 300 will be formed later. The photoresist pattern (PR_P) undergoes an exposure process of exposing the part where the photoresist pattern (PR_P) will be located on the photoresist layer (PR) to light such as ultraviolet rays (UV), except for the exposed part using a developer. It can be formed by removing the remaining parts.

As shown in FIG. 14, after the photoresist pattern (PR_P) is formed, the first dry etching (DE_1) process is performed to remove the first electrode 201, the side surface of the bank layer 105, and the bank layer 105. A protective material pattern (SL_P) may be formed on at least a portion of the upper surface. The protective material pattern (SL_P) includes a protective material layer (SL) formed on the first electrode 201 and the bank layer 105, and a photoresist pattern (PR_P) partially formed on the protective material layer (SL). It can be formed by dry etching (DE_1) by leaving a portion of the material of the protective material layer (SL) remaining on the first electrode 201, the side surface of the bank layer 105, and at least a portion of the top surface of the bank layer 105. .

The first dry etching (DE_1) uses oxygen (O ₂ ), fluorine-based gas (SF ₆ ), or argon (Ar) alone or in a mixed gas to quickly proceed with the etching rate to remove and protect the photoresist pattern (PR_P). The overall thickness of the material layer (SL) is reduced, and the etching delay due to the photoresist pattern (PR_P) causes at least a portion of the first electrode 201, the side surface of the bank layer 105, and the top surface of the bank layer 105. A protective material pattern (SL_P) can be formed to form a nanopattern. Additionally, the first dry etching DE_1 may be performed under conditions in which damage to the bank layer 105 can be minimized. The size of the nanopattern can be controlled by adjusting the thickness of the protective material pattern (SL_P) according to the conditions of the first dry etching (DE_1). The protective material pattern SL_P may have an even surface roughness.

As shown in FIG. 15, after the protective material pattern (SL_P) is formed, the second dry etching (DE_1) process is performed to remove the first electrode 201, the side of the bank layer 105, and the bank layer 105. A nanopattern 300 may be formed on at least a portion of the upper surface. The nanopattern 300 is formed by performing a second dry etching (DE_2) on the protective material pattern (SL_P) formed on the first electrode 201, the side of the bank layer 105, and at least a portion of the top surface of the bank layer 105. The protective material pattern (SL_P) on the first electrode 201, the side of the bank layer 105, and at least a portion of the top surface of the bank layer 105 is modified to form a random circular or cylindrical three-dimensional structure. It can be.

The second dry etching (DE_2) excludes the fluorine-based gas (SF ₆ ) included in the first dry etching (DE_1), and uses oxygen (O ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ), and nitrogen (N ₂ ), or by increasing the surface roughness of the protective material pattern (SL_P) by plasma treatment using argon (Ar) alone or a mixed gas to denature the remaining material, the first electrode 201, the bank layer ( Nanopatterns 300 with random shapes and arrangements may be formed on at least a portion of the side surface of the bank layer 105 and the top surface of the bank layer 105 .

The nanopattern 300 according to another embodiment of the present specification may have at least one dimension length of 10 nm or less in a three-dimensional structure. In addition, the nanopattern 300 has a longitudinal length of a surface in contact with at least one of the first electrode 201, the top surface of the bank layer 105, and the side surface of the bank layer 105, excluding the at least one contact surface. It may be smaller than the longitudinal length in other dimensions. For example, the nanopattern 300 may include a moth-eye shape that is advantageous for diffuse reflection and can reduce reflectance. The nanopatterns 300 can reduce the reflectance of external light reflected through the first electrode 201 by causing the incident external light to be diffusely reflected due to their random shape and arrangement.

Referring to FIG. 16, a nanopattern according to an embodiment of the present specification can be formed by adjusting dry etching process conditions. In Figure 16, a1, b1, and c1 are images of the substrate surface taken at a 10K scale according to the dry etching process time, and a2, b2, and c1 are images of a cross section of the substrate according to the dry etching process time taken at a 20K scale. It is one image.

As shown in a1 and a2 of FIG. 16, when the dry etching time is set to the first time, most of the material on the substrate is removed, the surface roughness of the material is even, and a nano-pattern structure may not be formed.

As shown in b1 and b2 of Figure 16, when the dry etching period is performed for a second time shorter than the first time, less material on the substrate is removed than in the case of a1 and a2, but the surface roughness of the material is even. , a nanopattern structure may not be formed.

As shown in c1 and c2 of Figure 16, when the dry etching time is performed to a third time shorter than the second time, the surface roughness of the material on the substrate increases, and a nano-pattern structure having a three-dimensional structure is formed. It can be. In this way, it can be seen that the formation of nanopatterns can be controlled by adjusting the dry etching process conditions. For example, it can be seen that dry etching can control the formation of nanopatterns by adjusting the process time under the same pressure and gas atmosphere.

Next, FIGS. 17 to 32 will be described in connection with FIG. 2 , and will relate to a method for manufacturing a display device after nanopattern formation according to an embodiment of the present specification. According to an embodiment of the present specification, the organic layer of each of the plurality of subpixels SP1, SP2, and SP3 may be patterned using a dry etching method.

As shown in FIG. 17, after the nanopatterns 300 are formed, a first organic layer ( 202a) can be formed. The first organic layer 202a may be commonly disposed at a location corresponding to the plurality of subpixels SP1, SP2, and SP3. The first organic layer 202a may later be formed with an organic layer pattern corresponding to the first subpixel SP1. The first organic layer 202a may be formed using a vacuum deposition method. The first organic layer 202a may be formed on the first electrode 201 corresponding to each of the plurality of subpixels SP1, SP2, and SP3 and the bank layer 105.

As shown in FIG. 18, after the first organic layer 202a is formed, a first protective material layer SL1 and a first photoresist layer PR1 are formed on the entire surface of the substrate 101 including the first organic layer 202a. ) can be formed sequentially. The first protective material layer SL1 and the first photoresist layer PR1 may be formed in a non-flat structure on the first organic layer 202a.

The first protective material layer SL1 may function as an etching stopper for the organic layer during the patterning process of the first organic layer 202a. The first protective material layer SL1 may include a water-based polymer material or a fluorine-based polymer material. For example, the water-based polymer material of the protective material layer (SL) may be a hydrophilic organic material such as polyethylene glycol (PEG), polyvinyl alcohol (PVA), or polyvinyl acetate (PVAc), and the fluorine-based polymer material may be carbon. -It may be a fluoropolymer material that contains a large amount of fluorine (F) in the functional group (or functional group) while the carbon bonds are formed continuously in a chain structure. According to the embodiment of the present specification, the first protective material layer SL1 may be formed of an aqueous polymer material, but is not necessarily limited thereto.

The first photoresist layer PR1 may be formed by selecting either a positive type or a negative type photoresist material. According to another embodiment of the present specification, the first photoresist layer PR1 may be formed of a negative type photoresist material, but is not necessarily limited thereto.

As shown in FIG. 19, after the first protective material layer SL1 and the first photoresist layer PR1 are formed, the first photoresist pattern PR1_P covers a portion of the surface of the first protective material layer SL1. ) can be formed. The first photoresist pattern PR1_P may be disposed at a location where the first organic layer 202a pattern corresponding to the first subpixel SP1 will be formed. The first photoresist pattern (PR1_P) undergoes an exposure process of exposing the portion where the first photoresist pattern (PR1_P) will be located on the first photoresist layer (PR1) to light such as ultraviolet rays (UV), and uses a developer. Thus, it can be formed by removing the remaining parts except the exposed part.

As shown in FIG. 20, after the first photoresist pattern PR1_P is formed, a dry etching process is performed using the first photoresist pattern PR1_P as a mask pattern to form the first protective material pattern SL1_P and the first protective material pattern SL1_P. The remaining portion of the first protective material layer SL1 and the first organic layer 202a, excluding the first organic layer 202a protected by the protective material pattern SL1_P, is removed to form a second layer corresponding to the first subpixel SP1. 1 The organic layer 202a can be patterned. At this time, the nanopatterns 300 may remain on the first electrode 201 corresponding to the second subpixel SP2 and the third subpixel SP3 without being removed.

As shown in FIG. 21, after the first organic layer 202a is patterned, the second organic layer 202b may be formed on the entire surface of the substrate 101 including the first protective material pattern SL1_P. The second organic layer 202a may be commonly disposed at a location corresponding to the plurality of subpixels SP1, SP2, and SP3. The second organic layer 202b may later be formed with an organic layer pattern corresponding to the second subpixel SP2.

Before forming the second organic layer 202b, plasma treatment may be performed to remove foreign substances or residues generated in the previous process. For example, the plasma treatment process may be performed by turning individual or mixed gases of oxygen (O ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ) and nitrogen (N ₂ ), or argon (Ar) into plasma.

As shown in FIG. 22, after the second organic layer 202b is formed, the first protective material pattern SL1_P located on the first organic layer 202a may be removed. The first protective material pattern SL1_P may be removed using a de-ionized (DI) solution. The DI solution may penetrate into the first protective material pattern SL1_P and be removed by peeling it from the first organic layer 202a. Additionally, the second organic layer 202b disposed on top of the first protective material pattern SL1_P may be removed during the process of removing the first protective material pattern SL1_P. At this time, the protruding pattern 202b_t of the second organic layer 202b may be formed on the edge portion of the removed first protective material pattern SL1_P.

As shown in FIG. 23, a second protective material layer (SL2) and a second photoresist layer (PR2) are formed on the front surface of the substrate 101 including the first organic layer (202a) pattern and the second organic layer (202b). can be formed sequentially. The second protective material layer SL2 and the second photoresist layer PR2 may be formed in a non-flat structure on the first organic layer 202a pattern and the second organic layer 202b. The second protective material layer SL2 may be made of the same material as the first protective material layer SL1. Additionally, the second photoresist layer PR2 may be made of the same material as the first photoresist layer PR1.

As shown in FIG. 24, after the second protective material layer SL2 and the second photoresist layer PR2 are formed, a second photoresist pattern PR2_P covers a portion of the surface of the second protective material layer SL2. ) can be formed. The second photoresist pattern PR2_P is disposed at a location where the first organic layer 202a pattern corresponding to the first subpixel SP1 and the second organic layer 202b pattern corresponding to the second subpixel SP2 will be formed. It can be. The second photoresist pattern (PR2_P) undergoes an exposure process of exposing the portion where the second photoresist pattern (PR2_P) will be located on the second photoresist layer (PR2) to light such as ultraviolet rays (UV), and uses a developer. Thus, it can be formed by removing the remaining parts except the exposed part.

As shown in FIG. 25, after the second photoresist pattern PR2_P is formed, a dry etching process is performed using the second photoresist pattern PR2_P as a mask pattern to form the second protective material pattern SL2_P and the second protective material pattern SL2_P. The second protective material layer (SL2), the first organic layer (202a), and the second organic layer (202b) except for the first organic layer (202a) and the second organic layer (202b) protected by the protective material pattern (SL2_P) By removing, the first organic layer 202a corresponding to the first subpixel SP1 and the second organic layer 202b corresponding to the second subpixel SP2 can be patterned. At this time, the first organic layer 202a and the second organic layer 202b may be patterned to be spaced apart from each other on the bank layer 105, and the protruding pattern 202b_t of the second organic layer 202b may be removed. Additionally, the nanopatterns 300 may remain on the first electrode 201 corresponding to the third subpixel SP3 without being removed.

As shown in FIG. 26, after the first organic layer 202a and the second organic layer 202b are patterned, a third organic layer 202c is formed on the front surface of the substrate 101 including the second protective material pattern SL2_P. can be formed. The third organic layer 202c may be commonly disposed at a location corresponding to the plurality of subpixels SP1, SP2, and SP3. The third organic layer 202c may later be formed with an organic layer pattern corresponding to the third subpixel SP3.

Before forming the third organic layer 202c, plasma treatment may be performed to remove foreign substances or residues generated in the previous process. For example, the plasma treatment process may be performed by turning individual or mixed gases of oxygen (O ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ) and nitrogen (N ₂ ), or argon (Ar) into plasma.

As shown in FIG. 27, after the third organic layer 202c is formed, the second protective material pattern SL2_P located on the first organic layer 202a and the second organic layer 202b may be removed. The second protective material pattern SL2_P may be removed using a de-ionized (DI) solution. The DI solution may penetrate into the second protective material pattern SL2_P and be removed by peeling it from the first organic layer 202a and the second organic layer 202b. Additionally, the third organic layer 202c disposed on top of the second protective material pattern SL2_P may be removed during the process of removing the second protective material pattern SL2_P. At this time, the first protruding pattern 202c_t1 of the third organic layer 202c may be formed on the edge portion of the removed second protective material pattern SL2_P. Additionally, a second protruding pattern 202c_t2 of the third organic layer 202c may be formed in a portion between adjacent second protective material patterns SL2_P.

As shown in FIG. 28, a third protective material layer SL3 and The third photoresist layer PR3 may be formed sequentially. The third protective material layer SL3 and the third photoresist layer PR3 may be formed in a non-flat structure on the first organic layer 202a pattern, the second organic layer 202b, and the third organic layer 202c. The third protective material layer SL3 may be made of the same material as the first or second protective material layers SL1 and SL2. Additionally, the third photoresist layer PR3 may be made of the same material as the first or second photoresist layers PR2 and PR3.

As shown in FIG. 29, after the third protective material layer SL3 and the third photoresist layer PR3 are formed, the third photoresist pattern PR3_P covers a portion of the surface of the third protective material layer SL3. ) can be formed. The third photoresist pattern PR3_P includes a first organic layer 202a pattern corresponding to the first subpixel SP1, a second organic layer 202b pattern corresponding to the second subpixel SP2, and a third subpixel ( It may be disposed at a location where the third organic layer 202c pattern corresponding to SP3) will be formed. The third photoresist pattern (PR3_P) undergoes an exposure process of exposing the portion where the third photoresist pattern (PR3_P) will be located on the third photoresist layer (PR3) to light such as ultraviolet rays (UV), and uses a developer. Thus, it can be formed by removing the remaining parts except the exposed part.

As shown in FIG. 30, after the third photoresist pattern (PR3_P) is formed, a dry etching process is performed using the third photoresist pattern (PR3_P) as a mask pattern to form the third protective material pattern (SL3_P) and the third protective material pattern (SL3_P). The third protective material layer (SL3) and the third organic layer (202c) except for the first organic layer (202a), the second organic layer (202b), and the third organic layer (202c) protected by the protective material pattern (SL3_P) is removed to form the first organic layer 202a corresponding to the first subpixel SP1, the second organic layer 202b corresponding to the second subpixel SP2, and the third organic layer 202b corresponding to the third subpixel SP3. 3 The organic layer 202c can be patterned. At this time, the first organic layer 202a and the second organic layer 202b may be patterned to be spaced apart from each other on the bank layer 105, and the second organic layer 202b and the third organic layer 202c may be patterned on the bank layer 105. They may be patterned to be spaced apart from each other, and the first and second protruding patterns 202c_t1 and 202c_t2 of the third organic layer 202c may be removed.

As shown in FIG. 31, after the first organic layer 202a, the second organic layer 202b, and the third organic layer 202c are patterned, the first organic layer 202a, the second organic layer 202b, and the third organic layer The third protective material pattern (SL3_P) located on (202c) may be removed. The third protective material pattern SL3_P may be removed using a de-ionized (DI) solution. The DI solution may penetrate into the third protective material pattern SL3_P and be removed by peeling it from the first organic layer 202a, the second organic layer 202b, and the third organic layer 202c.

As shown in FIG. 32, the second electrode 203 may be commonly formed on the first organic layer (202a) pattern, the second organic layer (202b) pattern, and the third organic layer (202c) pattern and the bank layer 105. there is. Accordingly, the first electrode 201, the nanopattern 300 on the first electrode 201, the organic layers 202a, 202b, 202c, and the second electrode 201 are formed at positions corresponding to each of the plurality of subpixels SP1, SP2, and SP3. The electrodes 203 are sequentially stacked to form the light emitting device 200. In a subsequent process, an encapsulation layer, etc. may be further formed on the second electrode 203 to complete the manufacturing of the display device.

A display device and a method of manufacturing the display device according to an embodiment of the present specification can be described as follows.

A display device according to an embodiment of the present specification includes a substrate including a plurality of subpixels, a first electrode located on each of the plurality of subpixels, nanopatterns disposed on the first electrode, a first electrode, and nanopatterns. It may include an organic layer disposed on the organic layer, and a second electrode disposed on the organic layer.

According to the display device according to an embodiment of the present specification, the nanopattern may be covered by an organic layer.

According to the display device according to an embodiment of the present specification, the nanopattern and the organic layer may have different refractive indices.

According to the display device according to an embodiment of the present specification, the refractive index of the nanopattern may be higher than the refractive index of the organic layer.

According to the display device according to an embodiment of the present specification, the nanopattern may have a random circular or cylindrical shape with a three-dimensional structure.

According to the display device according to an embodiment of the present specification, the nanopattern may include a moth-eye shape.

According to the display device according to an embodiment of the present specification, the length of at least one dimension of the nanopattern in the three-dimensional structure may be 10 nm or less.

According to the display device according to an embodiment of the present specification, the longitudinal length of the surface in contact with the first electrode of the nanopattern may be smaller than the longitudinal length in other dimensions excluding the surface in contact with the first electrode.

According to the display device according to an embodiment of the present specification, the display device further includes a bank layer defining an opening of a first electrode corresponding to each of a plurality of subpixels, and the nanopattern is randomly formed on the first electrode exposed by the opening. It can be placed like this.

According to the display device according to an embodiment of the present specification, the display device further includes a bank layer defining an opening of a first electrode corresponding to each of a plurality of subpixels, and the nano pattern includes the first electrode and the bank layer exposed by the opening. may be randomly disposed on at least a portion of the upper surface of and on the sides of the bank layer.

According to a display device according to an embodiment of the present specification, the nanopattern has a long direction length of a surface in contact with at least one of the first electrode, the upper surface of the bank layer, and the side surface of the bank layer in other dimensions except for at least one contact surface. It may be smaller than the longitudinal length in .

According to the display device according to an embodiment of the present specification, the first electrode may be a reflective electrode, and the second electrode may be a transparent or translucent electrode.

A method of manufacturing a display device according to an embodiment of the present specification includes forming a first electrode on a substrate, forming a protective material pattern on the first electrode, and forming nanopatterns using the protective material pattern. , forming an organic layer covering the first electrode and the nanopatterns, and forming a second electrode covering the organic layer.

According to the method of manufacturing a display device according to an embodiment of the present specification, the protective material pattern may include a water-based polymer material or a fluorine-based polymer material.

According to the method of manufacturing a display device according to an embodiment of the present specification, the step of forming nanopatterns may include dry etching the protective material pattern to form nanopatterns randomly arranged on the first electrode.

According to the method of manufacturing a display device according to an embodiment of the present specification, dry etching may include plasma processing.

According to the method of manufacturing a display device according to an embodiment of the present specification, the nanopatterns have a random circular or cylindrical shape in a three-dimensional structure by denaturing the protective material pattern by plasma treatment, and have a length of at least one dimension in the three-dimensional structure. may be 10 nm or less.

According to the method of manufacturing a display device according to an embodiment of the present specification, the method further includes forming a bank layer defining an opening of the first electrode, and forming a protective material pattern includes forming a protective material pattern on the first electrode and the bank layer. A protective material layer of a non-flat structure may be formed, and the protective material layer may be dry etched to form a protective material pattern on the first electrode exposed by the opening.

According to the method of manufacturing a display device according to an embodiment of the present specification, the method further includes forming a bank layer defining an opening of the first electrode, and forming a protective material pattern includes forming a protective material pattern on the first electrode and the bank layer. A non-flat protective material layer and a photoresist pattern exposing a portion of the surface of the protective material layer are formed, and the protective material layer and the photoresist pattern are dry etched to expose the first electrode and the upper surface of the bank layer exposed by the opening. A protective material pattern may be formed on at least a portion of and on the side of the bank layer.

According to the method of manufacturing a display device according to an embodiment of the present specification, the step of forming nanopatterns includes dry etching the protective material pattern to expose the first electrode, at least a portion of the upper surface of the bank layer, and the bank exposed by the opening. Randomly placed nanopatterns can be formed on the side of the layer.

The present specification described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which this specification pertains that various substitutions, modifications, and changes are possible without departing from the technical details of the present specification. It will be clear to those who have the knowledge of. Therefore, the scope of the present specification is indicated by the claims described later, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present specification.

100: display device 110: display panel
200: light emitting device 300: nano pattern

Claims (20)

A substrate including a plurality of subpixels;
a first electrode located in each of the plurality of subpixels;
Nanopatterns disposed on the first electrode;
an organic layer disposed on the first electrode and the nanopatterns; and
A display device comprising a second electrode disposed on the organic layer. According to paragraph 1,
The display device wherein the nanopattern is covered by the organic layer. According to paragraph 1,
The display device wherein the nanopattern and the organic layer have different refractive indices. According to paragraph 3,
A display device wherein the refractive index of the nanopattern is higher than the refractive index of the organic layer. According to paragraph 1,
The display device wherein the nanopattern is a random circular or cylindrical shape with a three-dimensional structure. According to clause 5,
A display device wherein the nanopattern includes a moth-eye shape. According to paragraph 1,
The display device wherein the nanopattern has a length of at least one dimension of 10 nm or less in a three-dimensional structure. According to paragraph 1,
A display device wherein the longitudinal length of the surface of the nanopattern in contact with the first electrode is smaller than the longitudinal length in other dimensions except for the surface in contact with the first electrode. According to paragraph 1,
Further comprising a bank layer defining an opening of the first electrode corresponding to each of the plurality of subpixels,
The nanopattern is randomly disposed on the first electrode exposed by the opening. According to paragraph 1,
Further comprising a bank layer defining an opening of the first electrode corresponding to each of the plurality of subpixels,
The nanopattern is randomly disposed on the first electrode exposed by the opening, at least a portion of an upper surface of the bank layer, and a side surface of the bank layer. According to clause 10,
The nanopattern has a longitudinal length of a surface in contact with at least one of the first electrode, an upper surface of the bank layer, and a side surface of the bank layer, which is smaller than the longitudinal length in other dimensions except for the at least one contact surface. , display device. According to paragraph 1,
The display device wherein the first electrode is a reflective electrode and the second electrode is a transparent or translucent electrode. forming a first electrode on a substrate;
forming a protective material pattern on the first electrode;
forming nanopatterns using the protective material pattern;
forming an organic layer covering the first electrode and the nanopatterns; and
A method of manufacturing a display device, comprising forming a second electrode covering the organic layer. According to clause 13,
The method of manufacturing a display device, wherein the protective material pattern includes a water-based polymer material or a fluorine-based polymer material. According to clause 13,
The step of forming the nanopatterns is,
A method of manufacturing a display device, wherein the protective material pattern is dry-etched to form the nanopatterns randomly disposed on the first electrode. According to clause 15,
A method of manufacturing a display device, wherein the dry etching includes plasma processing. According to clause 16,
The nanopatterns have a random circular or cylindrical shape with a three-dimensional structure due to denaturation of the protective material pattern by the plasma treatment, and at least one dimension in the three-dimensional structure has a length of 10 nm or less. According to clause 13,
further comprising forming a bank layer defining an opening of the first electrode,
The step of forming the protective material pattern is,
Forming a protective material layer with a non-flat structure on the first electrode and the bank layer,
Dry etching the protective material layer to form the protective material pattern on the first electrode exposed by the opening. According to clause 13,
further comprising forming a bank layer defining an opening of the first electrode,
The step of forming the protective material pattern is,
Forming a non-flat protective material layer and a photoresist pattern exposing a portion of the surface of the protective material layer on the first electrode and the bank layer,
dry etching the protective material layer and the photoresist pattern to form the protective material pattern on the first electrode exposed by the opening, at least a portion of an upper surface of the bank layer, and a side surface of the bank layer, Method of manufacturing a display device. According to clause 19,
The step of forming the nanopatterns is,
A display device that dry-etches the protective material pattern to form the first electrode exposed by the opening, at least a portion of an upper surface of the bank layer, and the nanopatterns randomly disposed on a side of the bank layer. Manufacturing method.

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