KR20230111823A - Multilayerd electronic component - Google Patents

Abstract

A multilayer electronic component according to an embodiment of the present invention includes a body including a plurality of dielectric layers and internal electrodes disposed to face each other with the dielectric layers interposed therebetween; and an external electrode connected to the internal electrode and disposed outside the body. The dielectric layer includes a BaTiO ₃ -based base material main component and subcomponents, wherein the subcomponents include dysprosium (Dy) and terbium (Tb), and the content of terbium (Tb) is 0.2 mol or more and less than 1.0 mol relative to 100 mol of the base material main component, and the dielectric layer is a particle at a point (D50) at which the accumulated volume is 50% in the cumulative particle size distribution according to the particle size distribution system It may include a plurality of dielectric crystal grains having a size of 60 nm or more and 250 nm or less.

Description

Multilayer electronic components {MULTILAYERD ELECTRONIC COMPONENT}

The present invention relates to multilayer electronic components.

Multi-Layered Ceramic Capacitor (MLCC), one of the multilayer electronic components, is a chip-type capacitor that charges or discharges electricity by being mounted on printed circuit boards of various electronic products, such as video devices such as Liquid Crystal Displays (LCDs) and Plasma Display Panels (PDPs), computers, smartphones, and mobile phones. In addition, as the range of application of capacitors becomes wider and wider, demands for miniaturization, high capacity and high reliability are gradually expanding.

On the other hand, attempts have been made to improve reliability by including additive elements in a ceramic dielectric composition in order to achieve high capacity and high reliability, but when a dielectric composition is manufactured to a certain size or less, it is difficult to achieve a target high reliability level and firing stability is low, so it is difficult to develop a new type.

Japanese Unexamined Patent Publication No. 2020-136298

One of the various problems to be solved by the present invention is to improve the reliability of a multilayer electronic component by adding an additive element to a ceramic dielectric composition.

However, the present invention is not limited to the above, and will be more easily understood in the process of describing specific embodiments of the present invention.

A multilayer electronic component according to an embodiment of the present invention includes a body including a plurality of dielectric layers and internal electrodes disposed to face each other with the dielectric layers interposed therebetween; and an external electrode connected to the internal electrode and disposed outside the body. The dielectric layer includes a BaTiO ₃ -based base material main component and subcomponents, wherein the subcomponents include dysprosium (Dy) and terbium (Tb), and the content of terbium (Tb) is 0.2 mol or more and less than 1.0 mol relative to 100 mol of the base material main component, and the dielectric layer is a particle at a point (D50) at which the accumulated volume is 50% in the cumulative particle size distribution according to the particle size distribution system It may include a plurality of dielectric crystal grains having a size of 60 nm or more and 250 nm or less.

One of the various effects of the present invention is that when a dielectric layer is formed by adding an additive element to a ceramic-based dielectric composition, reliability of a multilayer electronic component can be improved.

However, the various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 schematically illustrates a perspective view of a laminated deficit component according to an embodiment of the present invention.
2 is a cross-sectional view taken along line II′ of FIG. 1;
3 is a TEM image according to an embodiment and a comparative example of the present invention.
4 is a graph showing a result of severe reliability evaluation according to an embodiment of the present invention and a comparative example.

Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and accompanying drawings. However, the embodiments of the present invention can be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shape and size of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

In addition, in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, so the present invention is not necessarily limited to the shown bar. In addition, components having the same function within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when it is said that a certain part includes a certain component, this means that it may further include other components, not excluding other components unless otherwise stated.

In the drawing, the first direction may be defined as the stacking direction or the thickness (T) direction, the second direction may be defined as the length (L) direction, and the third direction may be defined as the width (W) direction.

Stacked electronic components

1 schematically illustrates a perspective view of a laminated deficit component according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II′ of FIG. 1 .

Hereinafter, a multilayer electronic component according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 .

A multilayer electronic component according to an embodiment of the present invention includes a body including a plurality of dielectric layers and internal electrodes disposed to face each other with the dielectric layers interposed therebetween, and an external electrode connected to the internal electrodes and disposed outside the body, wherein the dielectric layer is BaTiO₃Including the base material main component and subcomponent, wherein the subcomponent includes dysprosium (Dy) and terbium (Tb), the content of terbium (Tb) is 0.2 mol or more and less than 1.0 mol relative to 100 mol of the base material main component, and the dielectric layer has a particle size of 60 nm or more and 250 nm or less at the point (D50) at which the cumulative volume total is 50% in the cumulative particle size distribution according to the particle size distribution system It may include a plurality of dielectric crystal grains.

The body 110 may include a plurality of dielectric layers 111 and internal electrodes 121 and 122 disposed to face each other with the dielectric layers 111 interposed therebetween.

Although the specific shape of the body 110 is not particularly limited, as shown, the body 110 may have a hexahedral shape or a shape similar thereto. Due to shrinkage of the ceramic powder included in the body 110 during firing, the body 110 may have a substantially hexahedral shape, although it does not have a perfectly straight hexahedral shape.

The body 110 may include first and second surfaces 1 and 2 facing each other in a first direction, third and fourth surfaces 3 and 4 connected to the first and second surfaces 1 and 2 and facing each other in a second direction, and fifth and sixth surfaces 5 and 6 connected to the first to fourth surfaces and facing each other in a third direction.

The plurality of dielectric layers 111 forming the body 110 are in a sintered state, and the boundary between adjacent dielectric layers 111 may be integrated to the extent that it is difficult to confirm without using a scanning electron microscope (SEM).

The material forming the dielectric layer 111 may include various ceramic additives, organic solvents, plasticizers, binders, dispersants, and the like added to powder such as barium titanate (BaTiO ₃ ) according to the purpose of the present invention.

Meanwhile, the thickness td of the dielectric layer 111 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component 100, the thickness td of the dielectric layer 111 may be 0.4 μm or less. Here, the thickness td of the dielectric layer 111 may mean an average thickness of the dielectric layer 111 . In this case, the dielectric layer 111 may have 400 layers or less, and may have a dielectric constant of 3000 or more at room temperature for miniaturization and high capacity of the multilayer electronic component.

The average thickness of the dielectric layer 111 may be measured by scanning an image of a cross section of the body 110 in the longitudinal and thickness directions (L-T) with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, an average value may be measured by measuring the thickness of one dielectric layer 111 at 30 equally spaced points in the longitudinal direction in the scanned image. The 30 equally spaced points may be designated in the active part Ac. In addition, if the average value is measured by extending the average value measurement to 10 dielectric layers 111, the average thickness of the dielectric layer 111 can be further generalized.

In addition, the dielectric layer may include a main component and a subcomponent of a BaTiO ₃ based base material.

More specifically _, the main component of the BaTiO ₃ base material forming the dielectric layer 111 is (Ba _1-x Ca _x )TiO ₃ , Ba(Ti _1-y Ca _{y )} O ₃ , (Ba _1-x Ca _x )(Ti _1-y Zr _y )O ₃ or Ba(Ti _1-y Zr _y )O ₃ and the like, but are not necessarily limited thereto.

The subcomponent includes dysprosium (Dy) and terbium (Tb), and the content of terbium (Tb) may be 0.2 mol or more and less than 1.0 mol based on 100 mol of the main component of the base material.

In general, in order to secure the reliability of the dielectric inside the multilayer electronic component, a lot of rare earth elements are added as subcomponents. Among these rare earth elements, dysprosium (Dy) is known to be effective in improving reliability by reducing the concentration of oxygen vacancies while substituting a Ba-site when added to barium titanate (BaTiO ₃ ), which is the main component of the base material.

On the other hand, when using a rare earth element having a larger ionic radius than dysprosium (Dy), for example, lanthanum (La), samarium (Sm), etc., Ba-site can be more effectively substituted, so it is more effective in reducing the concentration of oxygen vacancy defects. However, it is not applied in practice because there is a problem in that insulation resistance rapidly decreases due to excessive semiconductorization.

Therefore, in order to suppress semiconductorization to secure insulation resistance while minimizing oxygen vacancy defect concentration for reliability improvement, it is necessary to apply a rare earth element having a larger ionic radius than dysprosium (Dy) but not having a large size difference with dysprosium (Dy).

In addition, since the fixed-valence of general rare earth elements is +3, when Ba(+2) is substituted, it has a single positive charge (D _Ba ), but when it can have a multi-valence of +4 like terbium (Tb), it can have a double positive charge ( ^D _Ba ), so the effect of reducing the concentration of oxygen vacancies can be doubled. ^there is

Conversely, when ytterbium (Yb) has a variable electron valency of +2, since it is charge-neutral when Ba (+2) is substituted, it is not effective in reducing the oxygen vacancy defect concentration, and for this reason, it is known that reliability is further deteriorated when ytterbium (Yb) is added.

As a result, although it has a larger ionic radius than dysprosium (Dy), terbium (Tb) element, which is not semiconductorized to the extent of reducing insulation resistance and has multiple electron valences, is most effective in reducing the concentration of oxygen vacancy defects. Thus, the reliability of the dielectric of multilayer electronic components can be greatly improved, and it may be important to add a dielectric ceramic composition in which dysprosium (Dy) and terbium (Tb) are simultaneously applied.

Conventionally, attempts have been made to add one or more of dysprosium (Dy), gadolinium (Gd), and terbium (Tb) as rare earth elements to a dielectric ceramic composition, but without recognizing the above-mentioned effects of terbium (Tb), it was simply listed as a rare earth element or added in small amounts, and it seems that there has been little specific research on the content of terbium (Tb) added to improve reliability.

On the other hand, when the amount of terbium (Tb) is less than 0.2 mol relative to 100 mol of the main component of the base material, the reliability improvement effect due to the addition of terbium (Tb) may be insufficient, and when it is greater than 1.0 mol, it is advantageous in terms of reliability, but as the Curie temperature, Tc (Curie Temperature) moves to room temperature, temperature characteristics such as temperature coefficient of capacitance (TCC) may be greatly reduced, and insulation due to semiconductorization A decrease in resistance may occur.

Meanwhile, the dielectric layer may include a plurality of dielectric crystal grains having a particle size of 60 nm or more and 250 nm or less at a point (D50) at which the cumulative volume is 50% in the cumulative particle size distribution according to the particle size distribution system.

Here, D50 may mean the particle size at the point where the cumulative volume is 50% in the cumulative particle size distribution according to the particle size distribution system. For example, D50 = 100 nm means that particles with a size of 100 nm or less occupy 50% by volume in terms of volume accumulation.

More specifically, grain growth may be induced by adding subcomponents to a solid particulate base material having a D50 size of 50 nm or more and 150 nm or less, and the D50 size of the dielectric crystal grains may be 60 nm or more and 250 nm or less.

In the case of D50 = 50 nm of the solid particulate parent material, the grain growth due to the addition of subcomponents may be 60 nm or more and less than 100 nm based on D50, and in the case of D50 = 150 nm of the solid particulate parent material, the crystal grain growth due to the addition of subcomponents may be 170 nm or more and 250 nm or less based on D50.

On the other hand, when the D50 size of the dielectric crystal grains is less than 50 nm, there is a concern that the implementation of the expected effect due to the lack of employment of additive elements due to the decrease in dielectric constant and the decrease in grain growth rate may occur, and if it exceeds 250 nm, there is a risk of an increase in temperature characteristics and a capacity change rate according to DC voltage, and a decrease in the number of dielectric crystal grains per dielectric layer or the occurrence of pores in the dielectric, thereby reducing the reliability of multilayer electronic components.

In one embodiment of the present invention, the content of dysprosium (Dy) may be 0.2 mol or more and less than 1.2 mol based on 100 mol of the base material main component.

When the amount of dysprosium (Dy) is less than 0.2 mol relative to 100 mol of the main component of the base material, the reliability improvement effect due to the addition of dysprosium (Dy) may be insufficient, and when it is 1.2 mol or more, it is advantageous in terms of reliability. However, as Tc (Curie Temperature) moves to room temperature, temperature characteristics such as capacity temperature coefficient (TCC) may be greatly reduced, and insulation resistance may be reduced due to semiconductorization.

In one embodiment of the present invention, the number (b) of dielectric grains having pores in the dielectric grains relative to the total number (A) of the dielectric grains may satisfy b/A < 0.01. In addition, pores may not exist inside the dielectric crystal grains, and pores may be disposed at the triple point of the crystal grain boundary.

More specifically, crystal grain growth may occur as rare earth elements are added to the main component of the base material. At this time, pores may remain inside the crystal grains, and reliability of the multilayer electronic component may deteriorate.

In order to prevent this, dysprosium (Dy) or terbium (Tb) is added to the solid particulate parent material having a size of 50 nm or more and 150 nm or less, but the content of dysprosium (Dy) is adjusted to be 0.2 mol or more and less than 1.2 mol based on 100 mol of the main component of the parent material. In the case of control, it can be manufactured so that there is no or almost no pores inside the crystal grains while reliability is improved.

3 is a TEM image of dielectric crystal grains of a dielectric layer. Referring to this, when a dysprosium (Dy) additive is added to a BaTiO ₃ based particulate base material having a size of less than 200 nm manufactured through a conventional hydrothermal synthesis method, etc., it has a crystal grain size of 180 nm or more and 300 nm or less, and pores are formed inside the crystal grains. It can be confirmed from FIG. 3 (a). On the other hand, when additives containing dysprosium (Dy) and terbium (Tb) were added to the BaTiO ₃ solid particulate base material having a size of less than 200 nm, which is an embodiment of the present invention, pores were hardly formed inside the crystal grains, and pores were formed at the triple point from FIG. 3 (b).

Meanwhile, the internal electrodes 121 and 122 may include the first internal electrode 121 and the second internal electrode 122 and may include an active portion Ac forming capacitance. That is, the body 110 may be formed by alternately stacking the dielectric layer 111 on which the first internal electrodes 121 are printed and the dielectric layer 111 on which the second internal electrodes 122 are printed in a first direction, and then firing them.

The first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. In addition, the first internal electrode 121 may be exposed through the third, fifth, and sixth surfaces 3, 5, and 6. In this case, the first and second internal electrodes 121 and 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

According to the above configuration, when a predetermined voltage is applied to the first and second external electrodes 131 and 132 , charges are accumulated between the first and second internal electrodes 121 and 122 . At this time, the capacitance of the multilayer electronic component 100 is proportional to the overlapping area of the first and second internal electrodes 121 and 122 overlapping each other along the first direction in the active portion Ac.

The material forming the internal electrodes 121 and 122 is not particularly limited, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, and the internal electrodes 121 and 122 may be formed using a conductive paste.

Meanwhile, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component 100, the thickness te of the internal electrodes 121 and 122 may be 0.4 μm or less. Here, the thickness te of the internal electrodes 121 and 122 may mean an average thickness of the internal electrodes 121 and 122 .

The average thickness of the internal electrodes 121 and 122 may be measured by scanning an image of a cross section of the body 110 in the longitudinal and thickness directions (L-T) with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, an average value may be measured by measuring the thickness of one internal electrode 121 or 122 at 30 equally spaced points in the longitudinal direction in the scanned image. The 30 equally spaced points may be designated in the active part Ac. In addition, if the average value is measured by extending the average value measurement to the 10 internal electrode layers 121 and 122 , the average thickness of the internal electrodes 121 and 122 can be further generalized.

In one embodiment of the present invention, the average thickness (td) of the dielectric layer compared to the average thickness (te) of the internal electrodes may satisfy td/te > 2.

When the average thickness (td) of the dielectric layer compared to the average thickness (te) of the internal electrodes satisfies td/te > 2, a sufficient permittivity of the multilayer electronic component may be secured, and at the same time miniaturization and high capacity may be achieved.

The external electrodes 131 and 132 are disposed outside the body 110, are connected to the internal electrodes 121 and 122, and may be disposed on the third and fourth surfaces 3 and 4 of the body 110.

The external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132 respectively connected to the first and second internal electrodes 121 and 122 . More specifically, the external electrodes may include a first external electrode 131 disposed on the third surface 3 of the body 110 and a second external electrode 132 disposed on the fourth surface 4 of the body 110. In this case, the second external electrode 132 may be connected to a potential different from that of the first external electrode 131 .

In this specification, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number and shape of the external electrodes 131 and 132 may be changed according to the shape of the internal electrodes 121 and 122 or other purposes.

More specifically, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the body 110 . The electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass or resin-based electrodes containing a conductive metal and a base resin. In addition, the electrode layers 131a and 132a may have a form in which a plastic electrode and a resin-based electrode are sequentially formed on the body 110 . In addition, the electrode layers 131a and 132a may be formed by transferring a sheet containing a conductive metal onto the body 110 or by transferring a sheet containing a conductive metal onto a firing electrode.

That is, the electrode layers 131a and 132a may include a first electrode layer including a first conductive metal and glass and a second electrode layer disposed on the first electrode layer and including a second conductive metal and resin, and the first and second conductive materials may include one or more selected from the group consisting of copper (Cu), nickel (Ni), palladium (Pd), silver (Ag), and alloys thereof.

The external electrodes 131 and 132 may be formed using any material having electrical conductivity, such as metal, and a specific material may be determined in consideration of electrical characteristics, structural stability, and the like, and may further have a multilayer structure.

In one embodiment of the present invention, the external electrodes 131 and 132 may further include plating layers 131b and 132b disposed on the electrode layers 131a and 132a.

The plating layers 131b and 132b serve to improve mounting characteristics. The plating layers 131b and 132b may be formed by sputtering or electrolytic plating, and may be formed of a plurality of layers, but are not particularly limited thereto. For example, the plating layer may have a form in which a first plating layer and a second plating layer are sequentially formed on the electrode layers 131a and 132a, and the first and second plating layers may include one or more selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), palladium (Pd), platinum (Pd), gold (Au), silver (Ag), lead (Pd), and alloys thereof, but the type of plating layer is particularly Not limited.

As a more specific example of the plating layer, the plating layer may be a Ni or Sn plating layer, and the Ni plating layer may be sequentially formed as a first plating layer, a Sn plating layer, and a second plating layer on the electrode layers 131a and 132a, and the Sn plating layer, the Ni plating layer, and the Pd plating layer may be sequentially formed. Further, the plating layer may include a plurality of Ni plating layers and/or a plurality of Sn plating layers. By including the plating layer, mountability with a substrate, structural reliability, durability to the outside, heat resistance, and/or equivalent series resistance (ESR) can be improved.

The glass may serve to improve bondability and moisture resistance of the external electrodes 131 and 132 . That is, adhesion between the electrode layers 131a and 132a of the external electrode and the dielectric layer 111 of the body 110 can be maintained by the glass component.

The glass may have a composition in which oxides are mixed, and may include one or more selected from the group consisting of silicon oxide, boron oxide, aluminum oxide, transition metal oxide, alkali metal oxide, and alkaline earth metal oxide, although it is not particularly limited thereto.

In one embodiment of the present invention, the mean time to failure (MTTF) of the multilayer electronic component may be 145 hours or more.

Here, MTTF (Mean Time To Failure) may mean the average time from the start of use to failure of a product that is not repaired, and MTTF can be calculated through (total operating time / number of products that fail). That is, it is one of the values that can predict the lifetime of a device that cannot be repaired, and the longer the MTTF time, the better the reliability of the product. A specific criterion for this will be described in an embodiment to be described later.

The size of the multilayer electronic component 100 described in this specification does not need to be particularly limited. However, since the thickness of the dielectric layer 111 and the internal electrodes 121 and 122 must be reduced to increase the number of layers in order to simultaneously achieve miniaturization and high capacity, the reliability improvement effect according to the present invention can be more remarkable in the multilayer electronic component 100 having a size of 0402 (length × width, 0.4 mm × 0.2 mm) or less.

Hereinafter, the present invention will be described in more detail through examples, but this is to help a detailed understanding of the invention, and the scope of the present invention is not limited by the examples.

(Example)

In Example 1 of the present invention, a dielectric layer including dielectric grains having a D50 size of 120 nm or more and 240 nm or less is formed by adding subcomponents including dysprosium (Dy) and terbium (Tb) to a dielectric composition containing barium titanate (BaTiO ₃ ). At this time, among the subcomponents added, 0.9 mol of dysprosium (Dy) is added relative to 100 mol of BaTiO ₃ , and 0.5 mol of terbium (Tb) is added relative to 100 mol of BaTiO ₃ .

Comparative Example 1 includes a dielectric layer in which dielectric crystal grains are formed by adding subcomponents including dysprosium (Dy) to a BCT-based dielectric composition of barium titanate (BaTiO ₃ ) containing calcium (Ca). At this time, among the additives added, dysprosium (Dy) includes 1.5 moles relative to 100 moles of BCT.

Comparative Example 2 includes a dielectric layer in which dielectric crystal grains are formed by adding subcomponents including dysprosium (Dy) to a BCT-based dielectric composition of barium titanate (BaTiO ₃ ) containing calcium (Ca). At this time, among the additives added, dysprosium (Dy) contains 1.6 moles compared to 100 moles of BCT.

A temperature characteristic and severe reliability (HALT) test was performed on the sample chip including the dielectric layer having the composition as described above to evaluate the defect rate.

For the temperature characteristics, the capacitance temperature coefficient (TCC) was measured, and the X7S temperature characteristics standard must satisfy capacitance ±22% in the range of -55 ° C or more and 125 ° C based on 25 ° C capacity. In the case of Bias TCC, when based on the capacity at 25 ° C, it means the maximum value of the capacity change rate (%) within the above temperature range.

Referring to FIG. 4 , the HALT test was measured by mounting 40 sample chips for each comparative example and example on a substrate, and applying a temperature of 150° C. and a voltage of 48 V for 150 hours.

division Comparative Example 1 Comparative Example 2 Example 1 With/without terbium (Tb) radish radish you number of layers 353 383 370 permittivity 3062 2647 3320 temperature characteristics
(X7S) Minimum temperature (%) -24.4 -11.7 -19.4 maximum temperature (%) -15.6 -16.9 -20.8 Bias TCC (%) -67.38 -60.27 -68.1

Referring to Table 1 and FIG. 4, in the case of Comparative Example 1 in which terbium (Tb) was not added, the temperature characteristics (X7S) were not satisfied, and the reliability was not improved even in the severe reliability test (FIG. 4-(a)). Results are shown. Similarly, in the case of Comparative Example 2 in which terbium (Tb) was not added, the dielectric constant was relatively low even though the number of layers was high, and although the temperature characteristics (X7S) were good, the reliability was not improved in the severe reliability test (FIG. 4-(b)).

On the other hand, in the case of Example 1 in which terbium (Tb) is added, the temperature characteristics (X7S) are also satisfied, and the reliability is improved even in the severe reliability test (FIG. 4-(c)).

Additionally, the results of the additional severe reliability test (HALT) for Comparative Example 2 and Example 1 are shown in Table 2 below. At this time, the severe reliability test (HALT) was measured by mounting 40 sample chips of each of Comparative Example 2 and Example 1 on a substrate, and applying a temperature of 150° C. and a voltage of 75 V for 125 hours.

division Comparative Example 2 Example 1 With/without terbium (Tb) radish you Harsh Reliability Test (HALT)
(150℃, 75V) First failure (hours) 2.35 39.02 Life expectancy (hours) 7.12 145.65

Referring to Table 2, in the case of Comparative Example 2 in which terbium (Tb) was not added, when a temperature of 150 ° C. and 75 V were applied, the first failure time was 2.35 hours and the average lifespan was 7.12 hours, showing poor reliability results.

On the other hand, in the case of Example 1 in which terbium (Tb) was added, the first failure time was 39.02 hours and the average lifespan was 145.65 hours under the same conditions, showing improved reliability.

Therefore, it can be determined from the experimental example that the reliability of the multilayer electronic component can be improved as terbium (Tb) and dysprosium (Dy) are added.

Although the embodiment of the present invention has been described in detail above, the present invention is not limited by the above-described embodiment and the accompanying drawings. Therefore, various forms of substitution, modification and change will be possible by those skilled in the art within the scope of the technical spirit of the present invention described in the claims, and this will also be said to fall within the scope of the present invention.

100: stacked electronic components
110: body
111: dielectric layer
121, 122: internal electrode
131, 132: external electrode
131a, 132a: electrode layer
131b, 132b: plating layer

Claims (12)

a body including a plurality of dielectric layers and internal electrodes disposed to face each other with the dielectric layers interposed therebetween; and
an external electrode connected to the internal electrode and disposed outside the body; Including,
The dielectric layer includes a main component and a subcomponent of a BaTiO ₃ base material, wherein the subcomponent includes dysprosium (Dy) and terbium (Tb),
The content of terbium (Tb) is 0.2 mol or more and less than 1.0 mol relative to 100 mol of the main component of the base material,
The dielectric layer includes a plurality of dielectric crystal grains having a particle size of 60 nm or more and 250 nm or less at a point (D50) at which the cumulative volume is 50% in the cumulative particle size distribution according to the particle size distribution system
Stacked electronic components.
According to claim 1,
The content of dysprosium (Dy) is 0.2 mol or more and less than 1.2 mol relative to 100 mol of the main component of the base material
Stacked electronic components.
According to claim 1,
The main component of the base material is BaTiO ₃
Stacked electronic components.
According to claim 1,
The number (b) of dielectric grains having pores in the dielectric grains compared to the total number (A) of the dielectric grains satisfies b / A < 0.01
Stacked electronic components.
According to claim 1,
No pores exist inside the dielectric crystal grains, and pores are disposed at the triple point of the grain boundary
Stacked electronic components.
According to claim 1,
The average thickness (td) of the dielectric layer is 0.4 μm or less
Stacked electronic components.
According to claim 1,
The average thickness (te) of the internal electrode is 0.4 μm or less
Stacked electronic components.
According to claim 1,
The average thickness (td) of the dielectric layer compared to the average thickness (te) of the internal electrode satisfies td / te > 2
Stacked electronic components.
According to claim 1,
The external electrode includes an electrode layer disposed on the body and connected to the internal electrode,
The electrode layer is
a first electrode layer including a first conductive metal and glass; and
a second electrode layer disposed on the first electrode layer and including a second conductive metal and a resin; including,
The first and second conductive materials include at least one selected from the group consisting of copper (Cu), nickel (Ni), palladium (Pd), silver (Ag), and alloys thereof.
Stacked electronic components.
According to claim 1,
the external electrode
an electrode layer disposed on the body and connected to the internal electrode; and
a plating layer disposed on the electrode layer; including,
The plating layer includes at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), palladium (Pd), platinum (Pd), gold (Au), silver (Ag), lead (Pd), and alloys thereof.
Stacked electronic components.
According to claim 1,
The room temperature permittivity of the dielectric layer is 3000 or more
Stacked electronic components.
According to claim 1,
MTTF (Mean Time To Failure) of the laminated electronic component is 145 hours or more
Stacked electronic components.

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