KR20230102576A - Epitaxial film formation method and epitaxial film structure thereby - Google Patents

Abstract

The present disclosure relates to a method for forming an epitaxial film and an epitaxial film structure according thereto, and a technical problem to be solved is a method for forming an epitaxial film simply and inexpensively through aerosol deposition and heat treatment, and an epitaxial film according thereto to provide structure. To this end, the present disclosure provides a single crystal substrate, and a first powder having a lattice mismatch rate of -5% to +5% with the single crystal substrate is applied on the single crystal substrate at a rate of 100 m/s to 500 m/s. Disclosed is an epitaxial film structure manufactured by forming a first polycrystalline film by spraying through a nozzle in a vacuum at a speed of

Description

Epitaxial film formation method and epitaxial film structure accordingly {Epitaxial film formation method and epitaxial film structure thereby}

This disclosure relates to a method of forming an epitaxial film and an epitaxial film structure resulting therefrom.

Epitaxy or epitaxial growth refers to a phenomenon in which a crystal film having a direction is grown on a crystal substrate. One of the crystal growth methods for various device applications is to grow thin crystals on wafers made of compatible crystals. The crystals of the substrate may be the same as the material being grown or may be another material with a similar lattice structure. In this process, the substrate becomes a seed crystal on which a new crystal is grown, and the new crystal has the same crystal structure and orientation as the substrate.

A technique for growing a single crystal film having directionality on a substrate wafer is referred to as epitaxial growth or epitaxy. This is done at a temperature much lower than the melting point of the substrate crystal, and various methods are used to supply suitable atoms to the surface of the growth film.

These methods include chemical vapor deposition (CVD), growth from a melt (liquid-phase epitaxy (LPE)), and deposition of atoms in vacuum (molecular beam epitaxy (MBE)). etc.

Crystals having various properties required for electronic and optoelectronic devices can be grown using such a wide range of growth methods.

The above-described information disclosed in the background art of this invention is only for improving the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art.

An object to be solved according to the present disclosure is to provide a method for forming a single crystal epitaxial film simply and inexpensively through aerosol deposition and heat treatment, and an epitaxial film structure accordingly.

An exemplary epitaxial film structure according to the present disclosure provides a single-crystal substrate, and a first powder having a lattice mismatch rate of -5% to +5% with the single-crystal substrate is applied to the single-crystal substrate at 100 m/s. s to 500 m/s through a nozzle in vacuum to form a first polycrystalline film having an average particle diameter of 5 nm to 500 nm of particles constituting the polycrystalline film, and heat-treating the first polycrystalline film to form a first single crystal epitaxial It is produced by forming a film.

An exemplary epitaxial film structure according to the present disclosure provides a single crystal substrate, and a first powder and metal particles having a lattice mismatch rate of -5% to +5% with the single crystal substrate are formed on the single crystal substrate. The heterogeneous composite powder is sprayed through a nozzle in vacuum at a speed of 100 m/s to 500 m/s to form a first composite heteropolycrystalline film, and the first composite heterogeneous polycrystalline film is heat treated in an atmosphere to form a thickness of 1 nm to 1 nm in the epitaxial film. It is prepared by forming a first composite heterogeneous single crystal epitaxial film in which metal particles having an average particle diameter of 900 nm are present.

An exemplary epitaxial film structure according to the present disclosure provides a single-crystal substrate, and a first powder having a lattice mismatch rate of -5% to +5% with the single-crystal substrate is applied to the single-crystal substrate at 100 m/s. s to 500 m/s through a nozzle in vacuum to form a first polycrystalline film having an average particle diameter of 5 nm to 500 nm of particles constituting the polycrystalline film, and on the first polycrystalline film and the first polycrystalline film. A second powder having a lattice mismatch rate of -5% to +5% is sprayed through a nozzle in a vacuum at a speed of 100 m/s to 500 m/s to form a second polycrystalline film, It is manufactured by subjecting the polycrystalline film and the second polycrystalline film to separate or simultaneous atmosphere heat treatment to form a multilayer single-crystal epitaxial film.

The present disclosure may provide a method for forming a single crystal epitaxial film simply and inexpensively through aerosol deposition and heat treatment, and an epitaxial film structure according thereto. In addition, the present disclosure may provide a method of forming a heterogeneous multi-layer single crystal epitaxial film and an epitaxial film structure according thereto. In addition, the present disclosure may provide a method of forming a single crystal epitaxial film in which metal particles are embedded and an epitaxial film structure according to the method by additionally providing metal particles during the aerosol deposition process.

1 is a schematic diagram illustrating an exemplary epitaxial film forming apparatus and method of forming an epitaxial film according to the present disclosure.
2 is a schematic diagram illustrating an exemplary epitaxial film formation method and resulting epitaxial film structure according to the present disclosure.
3 is a table showing a substrate, a coating layer, and a lattice mismatch ratio of the coating layer to the substrate used in forming an exemplary epitaxial film according to the present disclosure.
4 is an enlarged cross-sectional photograph showing an exemplary epitaxial film structure according to the present disclosure.
5 is a diagram illustrating an X-ray diffraction (XRD) analysis result of an exemplary epitaxial film structure according to the present disclosure.
6 is a diagram illustrating an exemplary epitaxial film structure according to the present disclosure.
7 is a diagram illustrating an exemplary epitaxial film structure according to the present disclosure.
8 is a diagram illustrating an exemplary epitaxial film including metal particles and a lattice constant change rate thereof according to the present disclosure.

Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

The present disclosure is provided to more completely explain the present disclosure to those skilled in the art, and the following examples may be modified in many different forms, and the scope of the present disclosure is limited to the following examples. it is not going to be Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the spirit of the disclosure to those skilled in the art.

In addition, in the following drawings, the thickness or size of each layer is exaggerated for convenience and clarity of explanation, and the same reference numerals refer to the same elements in the drawings. As used herein, the term "and/or" includes any one and all combinations of one or more of the listed items. In addition, the meaning of "connected" in the present specification means not only when member A and member B are directly connected, but also when member A and member B are indirectly connected by interposing member C between member A and member B. do.

Terms used in this specification are used to describe specific embodiments and are not intended to limit the present disclosure. As used herein, the singular form may include the plural form unless the context clearly indicates otherwise. Also, when used herein, “comprise, include” and/or “comprising, including” refers to a referenced form, number, step, operation, member, element, and/or group thereof. presence, but does not preclude the presence or addition of one or more other shapes, numbers, operations, elements, elements and/or groups.

In this specification, terms such as first and second are used to describe various members, components, regions, layers and/or portions, but these members, components, regions, layers and/or portions are limited by these terms. It is self-evident that These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described in detail below may refer to a second member, component, region, layer or section without departing from the teachings of the present disclosure.

Space-related terms such as “beneath,” “below,” “lower,” “above,” and “upper” are associated with an element or feature shown in a drawing. It can be used for easy understanding of other elements or features. Terminology related to this space is for ease of understanding of the present disclosure according to various process conditions or use conditions of the present disclosure, and is not intended to limit the present disclosure. For example, if an element or feature in a figure is turned over, an element or feature described as "lower" or "below" becomes "above" or "above." Accordingly, "lower" is a concept encompassing "upper" or "below".

Also, in the present disclosure, the epitaxial film and the epitaxial film structure may be used interchangeably depending on the context, but this is a concept including the same film or structure.

1 is a schematic diagram illustrating an exemplary epitaxial film forming apparatus and method of forming an epitaxial film according to the present disclosure.

As shown in FIG. 1, the epitaxial film forming apparatus 100 according to the present disclosure includes a transport gas supply unit 110, a powder supply unit 120 for storing and supplying powder, and supplying powder from the powder supply unit 120 as a transport gas A transfer pipe 122 for transferring at high speed using a transfer pipe 122, a nozzle 132 for coating/laminating or spraying the powder from the transfer tube 122 on the single crystal substrate 131, and the powder from the nozzle 132 being applied to the single crystal substrate 131. It may include a process chamber 130 in which a polycrystalline film having a certain thickness is formed by colliding and crushing the surface of 131 .

In some examples, when a single crystal epitaxial layer is formed on the single crystal substrate 131 in an in situ manner, the process chamber 130 may further include a heater 131 .

In some examples, the single crystal substrate 131 on which the polycrystalline film is formed is taken out of the process chamber 130, and then a single crystal epitaxial film may be formed in a separate heater device.

In some examples, single crystal substrate 131 may include a silicon single crystal substrate, a sapphire single crystal substrate, or a SiC single crystal substrate. As will be described again below, in the embodiment of the present disclosure, SGGG [(Gd _2.6 Ca _0.4 )(Ga _4.1 Mg _0.25 Zr _0.65 )O ₁₂ ] was used as the single crystal substrate.

The transfer gas stored in the transfer gas supply unit 110 may be one type or a mixture of two types selected from oxygen, helium, nitrogen, argon, carbon dioxide, or hydrogen. The transfer gas is directly supplied from the transfer gas supply unit 110 to the powder supply unit 120 through the pipe 111, and the flow rate and pressure thereof may be controlled by the flow controller 150.

The powder supply unit 120 stores and supplies a large amount of powder, which may have an average particle diameter ranging from about 0.1 μm to about 50 μm. When the particle diameter range of the powder is smaller than about 0.1 ㎛, not only is it difficult to store and supply the powder, but also due to aggregation during powder storage and supply, particles smaller than 0.1 ㎛ are agglomerated during powder spraying, collision, crushing, and/or grinding. There is a disadvantage in that it is easy to form a green compact, which is in the form of a solid shape, and it is difficult to form a large-area polycrystalline film. In addition, when the particle diameter range of the powder is greater than about 50 μm, sand blasting, which cuts off the single crystal substrate during powder spraying, collision, crushing, and/or grinding, is likely to occur, as well as in some formed polycrystalline films. Since the particle diameter is relatively large, the film structure becomes unstable and the porosity inside or on the surface of the film increases, so that the original properties of the material may not be exhibited.

When the particle size range of the powder is about 0.1 μm to about 50 μm, a film having a relatively small porosity (porosity), no surface microcracks, and easy powder control can be obtained. In addition, when the particle size range of the powder is from about 0.1 μm to about 50 μm, a polycrystalline film having a relatively high stacking speed, being translucent, and having easy material properties can be obtained.

In some instances, the powder may be a brittle material. A brittle material means a material that is brittle and does not stretch.

The brittle material is one or two selected from yttrium-based oxides, fluorides, nitrides, Y ₂ O ₃ -Al ₂ O ₃ -based compounds (YAG, YAP, YAM), B ₄ C, ZrO ₂ or alumina (Al ₂ O ₃ ). It can be a mixture of species.

In some examples, the brittle material is yttria (Y ₂ O ₃ ), YAG (Y ₃ Al ₅ O ₁₂ ), rare earth series (element series with atomic numbers 57 to 71, including Y and Sc) oxides, alumina (Al ₂ O ₃ ), bio glass, silicon (SiO ₂ ), hydroxyapatite (hydroxyapatite) or titanium dioxide (TiO ₂ ) It may be one or a mixture of two selected from the group consisting of.

In some examples, the brittle material is hydroxyapatite, calcium phosphate, bio glass, Pb(Zr,Ti)O ₃ (PZT), alumina, titanium dioxide, zirconia (ZrO ₂ ), yttria (Y ₂ O ₃ ), yttria. -Zirconia (YSZ, Yttria stabilized Zirconia), dysprosia (Dy ₂ O ₃ ), gadolinia (Gd ₂ O ₃ ), ceria (CeO ₂ ), gadolinia-doped Ceria (GDC, Gadolinia doped Ceria), magnesia (MgO), barium titanate (BaTiO ₃ ), nickel manganate (NiMn ₂ O ₄ ), potassium sodium niobate (KNaNbO ₃ ), bismuth potassium titanate (BiKTiO ₃ ), bismuth sodium titanate (BiNaTiO ₃ ), CoFe ₂ O ₄ , NiFe ₂ O ₄ , BaFe ₂ O ₄ , NiZnFe ₂ O ₄ , ZnFe ₂ O ₄ , MnxCo _3-x O ₄ (where x is a positive real number of 3 or less), bismuth ferrite (BiFeO ₃ ), bismuth Zinc Niobate (Bi _1.5 Zn ₁ Nb _1.5O7 ), Lithium Aluminum Titanium Phosphate Glass Ceramic, Li-La-Zr-O Garnet Oxide, Li-La-Ti-O Perovskite Oxide, La-Ni-O Oxide, Lithium iron phosphate, lithium-cobalt oxide, Li-Mn-O spinel oxide (lithium manganese oxide), lithium aluminum gallium phosphate, tungsten oxide, tin oxide, lanthanum nickelate, lanthanum-strontium-manganese oxide, lanthanum-strontium- Iron-cobalt oxide, silicate phosphor, SiAlON phosphor, aluminum nitride, silicon nitride, titanium nitride, AlON, silicon carbide, titanium carbide, tungsten carbide, magnesium boride, titanium boride, metal oxide and metal nitride mixture, metal oxide and metal carbide It may be one type or a mixture of two types selected from the group consisting of a mixture, a mixture of a ceramic and a polymer, or a mixture of a ceramic and a metal.

In some examples, the powder may include a single crystal substrate and a material having a lattice mismatch rate of approximately -5% to approximately +5%. The lattice mismatch rate can be defined as the following equation. Here, the substrate may mean a single crystal substrate, and the coating layer may mean a polycrystalline film. The films, coating layers, films, etc. described below may all be polycrystalline films or single crystal films in the same sense.

When a polycrystalline film is formed using a material having a lattice mismatch rate within about -5% to about +5% and then subjected to atmospheric heat treatment, a single crystal epitaxial film having directionality without crystal grains can be obtained (see the upper right drawing in FIG. 2). ).

When a polycrystalline film is formed using a material having a lattice mismatch rate other than about -5% to about +5% and then heat treated, a polycrystalline film having crystal grains of several hundred nm or more can be obtained through grain growth (lower right in FIG. 2). see drawing).

As described again in the examples below, the powder may include Bi _1.0 Y _1.0 Gd _1.0 Fe _4.0 Ga _1.0 O ₁₂ or Bi _1.0 Y _2.0 Fe ₅ O ₁₂ . Here, Bi _1.0 Y _1.0 Gd _1.0 Fe _4.0 Ga _1.0 O ₁₂ may be expressed as (BiYGd) ₃ (FeGa) ₅ O ₁₂ .

The process chamber 130 maintains a vacuum state during film formation, and a vacuum unit 140 may be connected thereto. In some examples, the pressure of the process chamber 130 may be between approximately 1 Pascal and approximately 800 Pascals, and the pressure of the powder transported by the high-speed transfer tube 122 may be between approximately 500 Pascals and approximately 2000 Pascals.

In addition, the internal temperature range of the process chamber 130 during the formation of the polycrystalline layer may be approximately 0 °C to approximately 1200 °C.

In some examples, an internal temperature range of the process chamber 130 during formation of the single crystal film may be lower than the melting temperature of the single crystal substrate by the heater 131, for example, about 1000 °C to about 1200 °C.

Meanwhile, as described above, the pressure difference between the process chamber 130 and the high-speed transfer pipe 122 (or the transfer gas supply unit 110 or the powder supply unit 120) may be approximately 1.5 times to approximately 2000 times. When the pressure difference is less than about 1.5 times, high-speed transfer of the powder may be difficult, and when the pressure difference is greater than about 2000 times, the surface of the single crystal substrate may be excessively etched by the powder.

According to the pressure difference between the process chamber 130 and the transfer pipe 122, the powder from the powder supply unit 120 is injected through the transfer tube 122 and delivered to the process chamber 130 at high speed.

In addition, a nozzle 132 connected to the transfer pipe 122 is provided in the process chamber 130 to collide the powder into the substrate 131 at a speed of about 100 m/s to about 500 m/s. That is, the powder passing through the nozzle 132 is crushed and/or pulverized by kinetic energy obtained during transport and collision energy generated during high-speed collision to form a polycrystalline film having a certain thickness on the surface of the single crystal substrate 131. In some examples, the average particle diameter of the particles constituting the polycrystalline film may be about 5 nm to about 500 nm.

Meanwhile, by performing an atmosphere heat treatment process after the polycrystalline film is formed, a single crystal epitaxial film is formed. The heat treatment may be performed for 11 hours to 13 hours at a temperature of 1000 ° C to 1200 ° C in an air atmosphere. In some examples, a nitrogen atmosphere or an argon atmosphere may be used in addition to an atmospheric atmosphere.

2 is a schematic diagram illustrating an exemplary epitaxial film formation method and resulting epitaxial film structure according to the present disclosure.

As shown in FIG. 2 , a polycrystalline coating layer having crystal particles of several hundred nm or less may be provided on a single crystal substrate by the aerosol deposition method described above.

When such a polycrystalline coating layer is subjected to atmospheric heat treatment, a single crystal epitaxial coating layer or a polycrystalline coating layer may be provided.

For example, when the lattice mismatch between the single crystal substrate and the powder is within about -5% to about +5%, a single crystal epitaxial coating layer having orientation without crystal grains may be provided on the single crystal substrate.

As another example, when the lattice mismatch between the single crystal substrate and the powder is other than about -5% to about +5%, a polycrystalline coating layer having crystal grains of several hundred nanometers or more may be provided on the single crystal substrate through particle growth.

Hereinafter, Examples and Comparative Examples of the present invention will be described.

[Example]

3 is a table showing a substrate, a coating layer, and a lattice mismatch ratio of the coating layer to the substrate used in forming an exemplary epitaxial film according to the present disclosure.

As shown in Fig. 3, as the single crystal substrate, SGGG [(Gd _2.6 Ca _0.4 )(Ga _4.1 Mg _0.25 Zr _0.65 )O ₁₂ ] was used. The SGGG single crystal substrate has a cubic crystal structure and has a lattice parameter of a = 12.480 Å.

In addition, as shown in FIG. 3, three types of powder were used to form a polycrystalline film by an aerosol deposition method.

As a powder for a comparative example of the present disclosure, SrTiO ₃ has a lattice parameter of a = 3.905 Å. The lattice mismatch ratio of the SrTiO ₃ coating layer compared to the single crystal substrate is calculated as follows.

As the powder for the examples of the present disclosure, Bi _1.0 Y _1.0 Gd _1.0 Fe _4.0 Ga _1.0 O ₁₂ has a lattice parameter of a=12.37 Å. The lattice mismatch ratio of the Bi _1.0 Y _1.0 Gd _1.0 Fe _4.0 Ga _1.0 O ₁₂ coating layer compared to the single crystal substrate is calculated as follows.

As a powder for another embodiment of the present disclosure, Bi _1.0 Y _2.0 Fe ₅ O ₁₂ has a lattice parameter of a = 12.75 Å. The lattice mismatch ratio of the Bi _1.0 Y _2.0 Fe ₅ O ₁₂ coating layer compared to the single crystal substrate is calculated as follows.

4 is an enlarged cross-sectional photograph showing an exemplary epitaxial film structure according to the present disclosure.

As shown in (a) of FIG. 4, a (BiY) ₃ Fe ₅ O ₁₂ polycrystalline coating layer was provided on the SGGG single crystal substrate, and then, as a result of heat treatment at approximately 1100 ° C. for 12 hours in an air atmosphere, a single crystal epitaxial film was formed. .

However, as shown in (b) of FIG. 4, as a result of providing a SrTiO ₃ polycrystalline coating layer on the SGGG single crystal substrate and then heat-treating it at approximately 1100° C. for 12 hours in an air atmosphere, the crystal grains grow to hundreds of nm to form a polycrystalline film. was formed

That is, when a material with a small lattice mismatch rate with a single crystal substrate (within -5% to +5%) is grown as a single crystal film, and a material with a large lattice mismatch rate with a single crystal substrate (other than -5% to +5%) It grew into a polycrystalline film.

5 is a diagram illustrating an X-ray diffraction (XRD) analysis result of an exemplary epitaxial film according to the present disclosure. In the graph of FIG. 5, the X-axis means 2θ, and the Y-axis means intensity a.u.

As shown in the graph shown in (a) of FIG. 5 , a polycrystalline coating layer formed on a single crystal substrate having crystal grains of several hundred nm or less exhibits a plurality of peaks, showing typical characteristics of a polycrystalline film.

As shown in the graph shown in (b) of FIG. 5, a polycrystalline coating layer is formed on a single-crystal substrate, and the single-crystal coating layer provided by heat treatment exhibits several peaks, indicating the characteristics of a single-crystal film. Specifically, a single crystal peak having (444) orientation without crystal grains is observed. That is, since the peak of the single-crystal substrate and the peak of the single-crystal epitaxial film are clearly distinguished, it can be seen that the lattice mismatch rate of the single-crystal epitaxial film is small.

6 is a diagram illustrating an exemplary epitaxial film structure according to the present disclosure.

As shown in FIG. 6, a (BiYGd) ₃ (FeGa) ₅ O ₁₂ first single crystal epitaxial film is provided on the SGGG single crystal substrate, and a Bi _1.0 Y _2.0 Fe ₅ O ₁₂ second single crystal epitaxial film is also provided on the first single crystal epitaxial film. A two-single-crystal epitaxial film may be provided.

As can be seen in a TEM (Transmission Electron Microscope) photograph, the interface between the first single-crystal epitaxial film and the second single-crystal epitaxial film also exhibits a single-crystal structure.

Here, the crystallite mismatch rate between the first single-crystal epitaxial film and the second single-crystal epitaxial film can be calculated as follows.

In some examples, a first powder having a lattice mismatch rate of -5% to +5% with the single crystal substrate is sprayed on a single crystal substrate at a speed of 100 m/s to 500 m/s to form a first polycrystalline film, and then a first polycrystalline film is formed. On the first polycrystalline film, a second powder having a lattice mismatch of -5% to +5% with the first polycrystalline film is sprayed at a speed of 100 m/s to 500 m/s to form a second polycrystalline film, and then the first polycrystalline film is formed. As described above, the first and second single-crystal epitaxial films may be formed by subjecting the second polycrystalline film to heat treatment in an atmosphere.

In some examples, a first polycrystalline film is formed by spraying a first powder having a lattice mismatch ratio of -5% to +5% with the single crystal substrate on a single crystal substrate at a speed of 100 m/s to 500 m/s, and then forming a first polycrystalline film. The first polycrystalline film is subjected to atmospheric heat treatment to form a first single-crystal epitaxial film as described above. Subsequently, a second powder having a lattice mismatch ratio of -5% to +5% with the first polycrystalline film is sprayed on the first polycrystalline film at a speed of 100 m/s to 500 m/s to form a second polycrystalline film; Thereafter, the second polycrystalline film may be heat treated in an atmosphere to form a second single crystal epitaxial film as described above.

In some examples, a structure made of two single-crystal epitaxial films may be referred to as a multi-layer single-crystal epitaxial film.

7 is a diagram illustrating an exemplary epitaxial film structure according to the present disclosure.

As shown in FIG. 7 , the single crystal epitaxial layer may further include metal particles. In some examples, the metal particle may include gold, silver, copper, aluminum or nickel. The average particle diameter of the metal particles may be from about 1 nm to about 900 nm. In some examples, the metal particles along with the powder may be provided on a monocrystalline substrate similarly to the method described above. That is, the powder forms a polycrystalline film, and metal particles may be embedded in the polycrystalline film. In some examples, the wt% of metal particles to powder may be between approximately 0.001 wt% and approximately 30 wt%.

In addition, the polycrystalline film may become a single-crystal epitaxial film by the heat treatment process, and at this time, the metal particles may still remain embedded in the single-crystal epitaxial film. That is, in the present disclosure, a single crystal epitaxial film having a nanocomposite structure is provided by coating metal particles and powder on a single crystal substrate in an aerosol deposition method and then performing heat treatment in an atmosphere. In some examples, a single crystal epitaxial film in which metal particles having an average particle diameter of 1 nm to 900 nm are present may be referred to as a composite heterogeneous single crystal epitaxial film.

In this way, the present disclosure provides a plasmonic effect in which free electrons on the metal surface collectively vibrate due to resonance with an electromagnetic field of a specific energy possessed by the light when light is incident on the surface of the metal nanoparticle, which is a conductor, and the single crystal epitaxial film, which is a dielectric. can be obtained.

Accordingly, the present disclosure can be widely applied in the fields of materials, electronics, information and communication, environment, energy, biotechnology, new drug development, and medical care that require plasmonic effects, and in particular, plasmonic phenomena of metal nanostructures. It can be applied to biosensors, gas sensors, solar cells, light emitting diodes, and the like.

Under conventional methods such as CVD, LPE, MBE, etc., when metal particles are supplied on a single crystal substrate together with deposited particles, the growth of the single crystal film is hindered by the metal particles, so that a single crystal epitaxial film in which metal particles are embedded cannot be obtained as in the present disclosure. .

8 is a diagram illustrating an exemplary epitaxial film including metal particles and a lattice constant change rate thereof according to the present disclosure.

As shown in the enlarged picture of FIG. 8, in the right area (A), upper area (B), lower area (C) and left area (D) around the metal particle, the lattice of A, C, and D for B The constant rate of change was calculated. As shown in the graph of FIG. 8, the lattice constant change rates of A, C, and D are calculated to be 0.07%, -0.07%, and -0.17%, respectively, so that there is almost no change in lattice constant depending on the metal particles. That is, it can be seen that the metal particles do not hinder the single crystal growth in the present disclosure, and still allow an excellent single crystal epitaxial film to be provided.

What has been described above is only one embodiment for implementing an exemplary epitaxial film forming method and an epitaxial film according to the present disclosure, and the present disclosure is not limited to the above-described embodiment, and claims in the following claims As such, anyone skilled in the art in the field to which the present invention belongs without departing from the gist of the present disclosure will say that the technical spirit of the present disclosure exists to the extent that various changes can be made.

Claims (3)

A single crystal substrate is provided, and a first powder having a lattice mismatch rate of -5% to +5% with the single crystal substrate is placed on the single crystal substrate in a vacuum at a speed of 100 m/s to 500 m/s. An epitaxial film structure manufactured by spraying through a nozzle to form a first polycrystalline film having an average particle diameter of 5 nm to 500 nm of particles constituting the polycrystalline film, and subjecting the first polycrystalline film to heat treatment in an atmosphere to form a first single-crystal epitaxial film. A single crystal substrate is provided, and a composite heterogeneous powder of a first powder and metal particles having a lattice mismatch rate of -5% to +5% with the single crystal substrate is applied on the single crystal substrate at 100 m/s to 500 m / s through a nozzle in vacuum to form a first complex heterogeneous polycrystalline film, and heat-treat the first complex heteropolycrystalline film in an atmosphere to form metal particles having an average particle diameter of 1 nm to 900 nm in the epitaxial film. An epitaxial film structure prepared by forming a first composite heterogeneous single crystal epitaxial film to A single crystal substrate is provided, and a first powder having a lattice mismatch rate of -5% to +5% with the single crystal substrate is placed on the single crystal substrate in a vacuum at a speed of 100 m/s to 500 m/s. A first polycrystalline film having an average particle diameter of 5 nm to 500 nm of particles constituting the polycrystalline film is sprayed through the nozzle, and a lattice mismatch rate with the first polycrystalline film is -5 on the first polycrystalline film. % to +5% of the second powder is sprayed through a nozzle in a vacuum at a speed of 100 m/s to 500 m/s to form a second polycrystalline film, and the first polycrystalline film and the second polycrystalline film are separated or simultaneously in an atmosphere. An epitaxial film structure prepared by heat treatment to form a multilayer single-crystal epitaxial film,

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