KR20230100491A - Initiated chemical vapor deposition system for depositing polymer organic thin film by using vapor monomer and method for using them - Google Patents

Abstract

A chemical vapor deposition apparatus according to an embodiment of the present invention includes a deposition chamber, an initiator supply unit for supplying a liquid or vapor phase initiator into the deposition chamber, and a mixed gas including a vapor phase monomer and a carrier gas. A monomer supply unit supplied to the inside of the deposition chamber, a shower head disposed so that the initiator and mixed gas supplied into the deposition chamber can be uniformly diffused and descended inside the deposition chamber, disposed below the shower head, and passed through the shower head An activation unit that activates an initiator, and a susceptor that supports a substrate on which a polymer organic thin film is deposited through polymerization of monomers activated by the activated initiator and cools the substrate to induce adsorption of the polymer organic thin film. Including, the initiator supply unit and the monomer supply unit are formed independently, so that the deposition rate and quality of the polymer organic thin film can be improved through smooth and uniform supply of monomers.

Description

Chemical vapor deposition apparatus using vapor phase monomers and method for manufacturing polymer organic thin films using the same

The present invention relates to chemical vapor deposition equipment for depositing a high-quality polymer organic thin film and a method for manufacturing a polymer organic thin film using the same.

An initiated chemical vapor deposition (iCVD) process is a method of depositing a polymer organic thin film using polymerization of activated monomers. The chemical vapor deposition process is a dry process that does not use organic solvents or additives used in the existing liquid phase process by spin coating. It can form high-purity and high-quality polymer organic thin films, and has recently been in the limelight in the semiconductor device manufacturing process. there is.

In a general chemical vapor deposition process, first, a monomer and an initiator are introduced into a deposition chamber maintained in a vacuum. The introduced initiator is radicalized or activated by filament heat. The activated initiator activates the monomer introduced into the deposition chamber. The activated monomer is adsorbed on the surface of a substrate or substrate requiring thin film deposition and deposited as a polymer organic thin film through a polymerization reaction. As a method for improving the quality of the chemical vapor deposition process, a method of optimizing the filament array structure, a method of optimizing the vacuum formation and process pressure in the deposition chamber, and a method of enabling the activated monomer to lose thermal energy stably to form a uniform polymer There is a method of forming a thin film.

In existing chemical vapor deposition equipment, an initiator and a monomer are supplied into a deposition chamber in the form of a mixed solution. In order to smoothly supply the mixed solution into the deposition chamber, the difference between the pressure before supply and the internal pressure of the deposition chamber must be large. Since the initiator having a relatively small particle size has a high vapor pressure and a large pressure difference before and after being supplied to the deposition chamber, the initiator is smoothly supplied into the deposition chamber. On the other hand, in the case of a monomer having a relatively large particle size, it is difficult to supply the monomer to the deposition chamber because the vapor pressure is low and the pressure difference before and after supply to the deposition chamber is small. When the supply of the monomer is not smooth, the deposition rate of the polymer organic thin film to be formed is significantly lowered, and the unstable supply of the monomer results in poor deposition reproducibility. As a result, a longer deposition time is required for the formation of the required organic thin film, and it is difficult to expect the deposition of an organic thin film of excellent quality. These issues cause even greater problems in terms of process management when applied to mass production facilities.

In an embodiment of the present invention, in order to solve the problem that it is difficult to form a high-quality film due to the low vapor pressure of the monomer supplied to the deposition chamber, the monomer is mixed with a carrier gas in a gaseous state and supplied to the deposition chamber at a high vapor pressure. To provide a chemical vapor deposition apparatus capable of obtaining excellent thin film quality through smooth supply of monomers by increasing the pressure difference between the inside and outside of the deposition chamber and a method for manufacturing a polymer organic thin film using the same.

The problem to be solved by the present invention is not limited to the above-mentioned problem (s), and another problem (s) not mentioned will be clearly understood by those skilled in the art from the following description.

Chemical vapor deposition (iCVD) apparatus according to an embodiment of the present invention, the deposition chamber; an initiator supply unit supplying a liquid or gaseous initiator into the deposition chamber; a monomer supply unit supplying a mixed gas containing a vapor phase monomer and a carrier gas into the deposition chamber; a shower head disposed so that the initiator and the mixed gas supplied into the deposition chamber are uniformly diffused and descended in the deposition chamber; an activation unit disposed under the shower head and activating the initiator passing through the shower head; and a susceptor that supports a substrate on which a polymer organic thin film is deposited through polymerization of the monomer activated by the activated initiator and cools the substrate to induce adsorption of the polymer organic thin film, , The initiator supply unit and the monomer supply unit may be formed independently.

In the above embodiment, the monomer supply unit contains a liquid monomer, a reservoir for storing the gaseous monomer vaporized from the liquid monomer; an inlet for injecting the carrier gas into the reservoir; and an outlet supplying the mixed gas including the vapor phase monomer and the carrier gas in the reservoir to the deposition chamber.

In the above embodiment, one end of the inlet extending into the reservoir may be extended to be immersed in the liquid monomer.

In the above embodiment, one end of the inlet extending into the reservoir may extend to the surface of the liquid monomer.

In the above embodiment, the reservoir may include a heater jacket or a cooling jacket for vaporizing the liquid monomer into the vapor phase monomer and controlling the amount of the vaporized monomer through temperature control.

In the above embodiment, the monomer supply unit may include a carrier gas injection control unit connected to the other end of the inlet to control the amount or speed of the carrier gas injected into the reservoir.

In the above embodiment, one end of the initiator supply unit may be connected to the deposition chamber, and the other end of the initiator supply unit may include an initiator supply control unit configured to control the amount or speed of the initiator supplied to the deposition chamber.

In the above embodiment, the carrier gas may include argon (Ar), nitrogen (N2) or oxygen (O2).

In the above embodiment, the activator may include a filament or a plasma electrode, the filament may supply thermal energy to activate the initiator, and the plasma electrode may activate the initiator through plasma.

An iCVD apparatus according to an embodiment of the present invention includes a deposition chamber; a monomer supply unit supplying a mixed gas containing a vapor phase monomer and a carrier gas into the deposition chamber; a shower head disposed so that the mixed gas supplied into the deposition chamber can be uniformly diffused and descended inside the deposition chamber; an activating unit disposed under the shower head and activating the vapor phase monomer passing through the shower head; and a susceptor that supports a substrate on which a polymer organic thin film is deposited through polymerization of the activated monomers and induces adsorption of the polymer organic thin film by cooling the substrate, wherein the activator includes a plasma electrode. Including, it is possible to activate the monomer through the plasma formed by the plasma electrode.

In the above embodiment, the monomer supply unit contains a liquid monomer, and a reservoir for storing the gaseous monomer vaporized from the liquid monomer; an inlet for injecting the carrier gas into the reservoir; and an outlet supplying the mixed gas including the vapor phase monomer and the carrier gas in the reservoir to the deposition chamber.

In the above embodiment, the reservoir may include a heater jacket or a cooling jacket for vaporizing the liquid monomer into the gas phase monomer and adjusting the amount of the vaporized monomer through temperature control.

In the above embodiment, the monomer supply unit may include a carrier gas injection control unit connected to the other end of the inlet to adjust the amount or speed of the carrier gas injected into the reservoir.

A method of manufacturing a polymer organic thin film using an iCVD apparatus according to an embodiment of the present invention includes the steps of vaporizing a liquid monomer contained in a reservoir into a vapor phase monomer by applying heat (S1); Injecting a carrier gas into the reservoir (S2); Forming a mixed gas including the carrier gas and the vapor phase monomer injected into the reservoir (S3); supplying the mixed gas into a deposition chamber through a monomer supply unit (S4); uniformly diffusing and descending the mixed gas supplied into the deposition chamber through the monomer supply unit inside the deposition chamber through a shower head (S5); activating the vapor phase monomers included in the mixed gas passing through the showerhead through plasma formed by a plasma electrode (S6); Depositing the polymer organic thin film on the upper surface or side surface of the substrate through polymerization of the activated gas phase monomer (S7); may include.

In the embodiment, in order to induce adsorption of the polymer organic thin film formed by the polymerization reaction in step (S7), the substrate is cooled through a susceptor supporting the substrate (S71); may be included.

A method of manufacturing a polymer organic thin film using an iCVD apparatus according to an embodiment of the present invention includes the steps of vaporizing a liquid monomer contained in a reservoir into a vapor phase monomer by applying heat (P1); Injecting a carrier gas into the reservoir (P2); Forming a mixed gas including the carrier gas and the vapor phase monomer injected into the reservoir (P3); supplying the mixed gas into a deposition chamber through a monomer supply unit (P4); supplying a liquid or gaseous initiator into the deposition chamber through an initiator supplying part provided independently of the monomer supplying part (P41); uniformly diffusing and descending the mixed gas and the initiator supplied into the deposition chamber through the monomer supply unit and the initiator supply unit through a shower head (P5); activating the initiator through a filament for supplying thermal energy or a plasma electrode for forming plasma, and activating the vapor phase monomer included in the mixed gas with the activated initiator (P6); Depositing the polymer organic thin film on the upper surface or side surface of the substrate through polymerization of the activated gas phase monomer (P7); may include.

In the above embodiment, a step (P71) of cooling the substrate through a susceptor supporting the substrate to induce adsorption of the polymer organic thin film formed by the polymerization reaction in step (P7) may be included. .

According to an embodiment of the present invention, the deposition rate and quality of a polymer organic thin film can be improved through a smooth and uniform supply of monomers by supplying a mixture of gaseous monomers and a carrier gas into the deposition chamber at a sufficient vapor pressure. make it possible to improve

1 is a diagram schematically illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention.
2 and 3 are views schematically showing a monomer supply unit according to embodiments of the present invention.
4 is a diagram schematically illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention.
5 is a diagram schematically illustrating a chemical vapor deposition apparatus for directly activating a monomer through an activator without an initiator according to an embodiment of the present invention.
6 to 9 are diagrams illustrating each step of a method for manufacturing a polymer organic thin film according to embodiments of the present invention.

Advantages and/or features of the present invention, and methods of achieving them, will become apparent with reference to the following detailed description of the embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various forms different from each other, only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to completely inform the person who has the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram schematically illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a chemical vapor deposition apparatus according to an embodiment of the present invention includes a deposition chamber 1 in which a polymer organic thin film is deposited, and an initiator supply unit 2 for supplying an initiator (I) to the deposition chamber 1. ), a monomer supply unit 3 for supplying a mixed gas (M) of a vapor phase monomer and a carrier gas to the deposition chamber 1, an initiator (I) supplied into the deposition chamber 1, and a mixture A shower head (4) that induces uniform diffusion of the vapor phase monomers contained in the gas (M), an activation unit (5) that induces activation of the monomers through the activation of the initiator passing through the shower head, and a polymer organic A susceptor 7 supporting a substrate 6 on which a thin film is deposited is included.

The deposition chamber 1 induces a polymerization reaction of monomers through an activated initiator so that a polymer organic thin film can be deposited on the substrate 6 that needs to be deposited therein. It may include a scepter (7). The deposition chamber 1 may include a vacuum pump 8 to be maintained in a low vacuum state of low pressure for smooth deposition of the polymer organic thin film. In addition, when the polymer organic thin film is deposited at atmospheric pressure or higher depending on the type of monomer or initiator, the deposition chamber 1 may include a pressure pump 8 to maintain an appropriate pressure.

The initiator supply unit 2 is provided outside the deposition chamber 1 and supplies liquid or gaseous initiator I through an initiator supply line extending to an upper part of the inside of the deposition chamber 1 . The initiator supply unit 2 may store an initiator and supply the initiator into the deposition chamber 1 in a liquid or gaseous state at or before or after the monomer is supplied to proceed with the thin film deposition process. The initiator supply unit 2 may supply the initiator into the deposition chamber 1 in a gaseous or liquid form through an initiator supply control unit (not shown) such as a mass flow controller (MFC). The initiator is a material that induces the activation of the first reaction so that the monomers can form a polymer organic thin film through a polymerization reaction. As the type of initiator, a thermal initiator or a UV initiator may be applied, and it is not limited thereto and can be applied as long as it can be decomposed by heat supply to activate the monomer.

On the other hand, since the initiator plays a role of inducing the activation of the monomer so that the polymerization reaction takes place, the initiator may not be used if the monomer can be directly activated. An embodiment for not using an initiator will be described later with reference to FIG. 5 .

The monomer supply unit 3 is provided outside the deposition chamber 1 and supplies vapor phase monomers together with a carrier gas to the inside of the deposition chamber 1 in the form of a mixed gas M. The monomer supply unit 3 is formed independently of the initiator supply line and supplies the mixed gas I of the vapor phase monomer and the carrier gas to the deposition chamber 1 through a mixed gas supply line extending to the top of the inside of the deposition chamber 1. ) is supplied into the interior of When monomers are supplied to the deposition chamber 1 together with a vapor or liquid initiator through a single supply line, or when they are supplied to the deposition chamber 1 together with a carrier gas through a single supply line, the vapor pressure is relatively high. Since the difference in pressure before and after supplying the low monomer to the deposition chamber 1 is small, it is difficult to achieve a sufficient and uniform supply compared to the initiator. When the monomer is supplied to the deposition chamber 1 through a separate supply line from the initiator and supplied to the deposition chamber 1 in the form of a mixed gas together with a carrier gas to further increase the vapor pressure, sufficient and uniform monomer supply is possible Details of vaporizing the monomer, mixing it with the carrier gas, and supplying it to the deposition chamber 1 will be described later.

The monomer is a unit that can be used to form a polymer organic thin film, and the polymer organic thin film is formed through polymerization of activated monomers. The monomer may be applied without particular limitation as long as it satisfies the material, physical properties, process conditions, or environmental regulations of the polymer organic thin film to be deposited. The carrier gas makes the vapor pressure of the vaporized monomer sufficiently high, and may include argon (Ar), nitrogen (N ₂ ) or oxygen (O ₂ ), but is not limited thereto, and various types of gases may be used depending on the type of thin film. can be applied

The shower head 4 allows monomers and initiators supplied through separate supply lines to be uniformly diffused and descended inside the deposition chamber 1 . The showerhead 4 includes a plurality of holes, and allows monomers and initiators to descend after passing through the holes. The diameter of the holes included in the showerhead 4 may be 0.5 mm to 5 mm, and the respective holes may be arranged at intervals of 5 mm to 20 mm. The diameters of the holes included in the showerhead 4 may be the same, but are not limited thereto, and may be diversified such that the diameters increase from the center to the edge according to the horizontal distribution of the monomers and initiators supplied to the deposition chamber 1. The holes included in the showerhead 4 may be arranged at regular intervals, but are not limited thereto, and are arranged in a higher density from the center to the edge according to the horizontal distribution of the monomers and initiators supplied to the deposition chamber 1. The layout can be varied.

The activator 5 is located below the shower head 4 to activate or radicalize the initiator. The activator 5 may include a filament or a plasma electrode. The filament activates the initiator by converting electrical energy into thermal energy like a resistive coil and supplying the converted thermal energy to the initiator. The plasma electrode activates the initiator through arc generation ionized gaseous plasma. As the initiator passes through the activator 5 and is activated, it becomes an unstable state (meta stable state), and activates nearby vapor phase monomers to be placed in an unstable state.

The susceptor 7 supports the substrate 6 on which the polymer organic thin film is deposited and cools the substrate 6 for thin film deposition. The susceptor 7 may include a cooling device using a thermoelectric element or a cooling device using cooling water or refrigerant gas for efficient and stable cooling of the substrate 6 . The activated monomer descends to reach the surface of the substrate 6 and is adsorbed, and the cooled substrate 6 absorbs the thermal energy of the monomer and improves adsorption. The monomer activated through the above process is deposited as a polymer organic thin film on the substrate 6 through polymerization and deposition.

2 and 3 are diagrams schematically showing a monomer supply unit 3 according to embodiments of the present invention.

Referring to FIGS. 2 and 3 , the monomer supply unit 3 may include a reservoir 31 , an inlet 32 and an outlet 33 . The reservoir 31 contains the liquid monomer (M _l ) and stores the vaporized monomer (M _g ) from the liquid monomer. The reservoir 31 may include a heater jacket (not shown), and may heat the liquid monomer to vaporize it into a gaseous monomer. In addition, the reservoir 31 may include a cooling jacket (not shown), and the gaseous monomer may be cooled and liquefied into a liquid monomer. The reservoir 31 may control the amount of vapor phase monomer stored in the reservoir 31 through temperature control using a heater jacket or a cooling jacket. The reservoir 31 may be supplied with liquid monomer from the outside through a control valve (not shown) so as to maintain a constant amount of the liquid monomer contained therein.

One end 32a of the inlet is connected to the inside of the reservoir 31, and the carrier gas C is supplied through the other end 32b. Referring to FIG. 2 , one end 32a of the inlet connected to the inside of the reservoir 31 extends only to the upper portion of the water surface of the liquid monomer M _l and may not be submerged in the liquid monomer M _l . Also, referring to FIG. 3 , one end 32a of the inlet may be provided to extend below the surface of the liquid monomer M _l and be submerged in the liquid monomer M _l . Whether one end 32a of the inlet is immersed in the liquid monomer M _l depends on the pressure inside the reservoir 31, the pressure of the carrier gas supplied, the pressure of the mixed gas supplied to the deposition chamber 1, or each part. It can be appropriately selected according to whether or not there is a reverse flow. A carrier gas injection control unit 32c for controlling the amount or speed of the carrier gas supplied may be connected to the other end 32b of the inlet. The carrier gas injection controller 32c may be implemented as a device such as a mass flow controller (MFC). The ratio of gaseous monomer and carrier gas mixed in the reservoir 31 may be independently or integrally controlled through the carrier gas injection controller 32c, the heater jacket or the cooling jacket.

One end of the outlet 33 extends above the surface of the liquid monomer inside the reservoir 31, and the other end is connected to the inside of the deposition chamber 1. The mixed gas M containing gaseous monomer and carrier gas in the reservoir 31 is supplied into the deposition chamber 1 through the other end of the outlet 33 .

4 is a diagram schematically illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 4 , the monomer supply unit 3 may include a mixed gas supply control unit 33a connected to the other end of the outlet 33 so that the mixed gas can be supplied sufficiently and uniformly. The mixed gas supply control unit 33a may be interlocked with the initiator supply control unit, and may control the supply amount or supply speed of the mixed gas according to the initiator supply amount or supply speed so as to maintain optimum thin film deposition conditions. A pressure gauge (P _M ) capable of checking the supply amount or supply speed of the mixed gas may be connected to the other end of the outlet 33 . In addition, a pressure gauge P _I capable of checking the supply amount or supply speed of the initiator may be connected to the supply line between the deposition chamber 1 and the initiator supply unit 2 .

Table 1 below shows the deposition rate of the polymer organic thin film according to the injection rate of the carrier gas using the chemical vapor deposition apparatus according to the embodiment of the present invention. While maintaining the process pressure of the deposition chamber at 0.3 Torr and the vapor pressure of the mixed gas at 0.6 Torr, the deposition rate of the thin film was measured while changing the flow of the carrier gas (N ₂ ). Referring to Table 1, it can be seen that the deposition rate of the thin film increases when the carrier gas is injected compared to when the carrier gas is not injected. Through this, it can be confirmed that when the monomer is supplied in a gaseous state at a high pressure by mixing with a carrier gas through a separate supply line from the initiator, the supply of the monomer is smooth and the deposition rate of the thin film is improved.

_N2 flow Thin film deposition rate (thick/min) 0 1.88 10 2.55 20 2.66 30 2.56 50 2.38 70 2.47 100 2.39

Table 2 below shows the process pressure window of the deposition chamber when the carrier gas is injected and when the carrier gas is not injected using the chemical vapor deposition apparatus according to the embodiment of the present invention, and the pressure of the mixed gas increases. The enlargement of indicates the deposition rate of the thin film according to the increase in the process pressure in the deposition chamber. Referring to Table 2, it can be confirmed once again that the deposition rate of the thin film is increased when the carrier gas (N ₂ ) is injected than when it is not injected. In addition, it can be confirmed that the deposition rate of the thin film increases as the pressure of the mixed gas increases. Accordingly, it can be confirmed that when the pressure of the monomer supplied to the deposition chamber is increased using the carrier gas, the monomer is smoothly supplied, thereby increasing the deposition rate of the thin film.

N ₂ flow presence or absence Deposition chamber pressure (Torr) Thin film deposition rate (thick/min) X 0.3 2.39 O 0.5 3.67 O One 6.46 O 2 9.80

5 is a diagram schematically illustrating a chemical vapor deposition apparatus for directly activating a monomer through an activator without an initiator according to an embodiment of the present invention.

Referring to FIG. 5 , the chemical vapor deposition apparatus according to an embodiment of the present invention deposits a deposition chamber 1 in which a polymer organic thin film is deposited, a mixed gas M including a vapor phase monomer and a carrier gas into the deposition chamber 1 ), a shower head 4 for inducing uniform diffusion of the gas phase monomers contained in the mixed gas M supplied into the deposition chamber 1, and the gas phase monomers passing through the shower head. It includes an activator 51 for activating and a susceptor 7 for supporting the substrate 6 on which the polymer organic thin film is deposited.

The activator 51 may include a plasma electrode, and the plasma electrode directly activates the gaseous monomer through ionized gaseous plasma by arc generation. Therefore, an initiator for activating the gas phase monomer and a separate configuration for supplying the initiator are unnecessary.

The monomer supply unit 3 mixes gaseous monomers with a carrier gas and supplies them in the form of a mixed gas in order to smoothly supply the monomers into the deposition chamber 1 . Through this, it is possible to smoothly and uniformly supply the monomers into the deposition chamber 1 by increasing the vapor pressure of the supplied vapor phase monomer and increasing the pressure difference between the vapor phase monomers supplied into the deposition chamber 1 .

Other configurations can be equivalently modified for the same operation and effect from the embodiments according to FIGS. 1 to 4 using an initiator, so redundant content will be omitted for concise description.

6 and 7 are diagrams illustrating each step of a method for manufacturing a polymer organic thin film according to embodiments of the present invention.

Referring to FIG. 6, the method for manufacturing a polymer organic thin film according to an embodiment of the present invention includes the steps of applying heat to a liquid monomer contained in a reservoir to vaporize it into a vapor phase monomer (S1), and injecting a carrier gas into the reservoir ( S2), forming a mixed gas including the carrier gas and gaseous monomer injected into the reservoir (S3), supplying the mixed gas into the deposition chamber through the monomer supply unit (S4), through the monomer supply unit Uniformly diffusing and descending the mixed gas supplied into the deposition chamber inside the deposition chamber through the shower head (S5), the gaseous monomers included in the mixed gas passing through the shower head are converted into plasma formed by the plasma electrode. It may include activating through (S6), and depositing a polymer organic thin film on the top or side surface of the substrate through polymerization of the activated gas phase monomer (S7). In step S1, the amount of gaseous monomer vaporized through a heater jacket or a cooling jacket may be adjusted. In step S2, the amount or speed of the carrier gas injected into the reservoir may be adjusted through the carrier gas injection control unit. In step S4, the amount or speed of the mixed gas supplied to the deposition chamber may be adjusted through the mixed gas supply controller. In order to maintain optimum thin film deposition conditions, the ratio of gaseous monomer and carrier gas mixed in the reservoir may be independently or integrally controlled through a carrier gas injection control unit, a heater jacket, or a cooling jacket.

Referring to FIG. 7 , a step ( S9 ) of cooling the substrate through a susceptor may be included to induce adsorption of the polymer organic thin film formed by polymerization in step ( S7 ). Hereinafter, for concise description of the invention, the above and redundant contents will be omitted.

8 and 9 are diagrams illustrating each step of a method for manufacturing a polymer organic thin film according to embodiments of the present invention.

Referring to FIG. 8, the method for manufacturing a polymer organic thin film according to an embodiment of the present invention includes the steps of applying heat to a liquid monomer contained in a reservoir to vaporize it into a gaseous monomer (P1), and injecting a carrier gas into the reservoir ( P2), forming a mixed gas including the carrier gas and gaseous monomer injected into the reservoir (P3), supplying the mixed gas into the deposition chamber through a monomer supply unit (P4), Supplying an initiator into the deposition chamber through an initiator supply unit provided independently of the monomer supply unit (P41), the mixed gas and the initiator respectively supplied into the deposition chamber through the monomer supply unit and the initiator supply unit are transferred to the deposition chamber through a shower head. Uniformly diffusing and descending inside (P5), activating the initiator through a filament supplying thermal energy or a plasma electrode forming plasma, and activating the gaseous monomer included in the gas mixture with the activated initiator (P6 ), depositing a polymer organic thin film on the top or side surface of the substrate through polymerization of activated gas phase monomers (P7). In the step (P1), the amount of gaseous monomer vaporized through a heater jacket or a cooling jacket may be adjusted. In step P2, the amount or speed of the carrier gas injected into the reservoir may be adjusted through the carrier gas injection controller. In step P4, the amount or speed of the mixed gas supplied to the deposition chamber may be adjusted through the mixed gas supply controller. Step P41 may be performed regardless of any one of steps P1 to P4. In step P41, the amount or speed of the liquid or gaseous initiator supplied to the deposition chamber through the initiator supply control unit may be adjusted. The ratio of gaseous monomer and carrier gas mixed in the reservoir may be independently or integrally controlled through a carrier gas injection controller, a heater jacket, or a cooling jacket. In addition, through the interlocking of the mixed gas supply control unit and the initiator supply control unit, the supply amount or supply speed of the mixed gas may be adjusted according to the initiator supply amount or supply speed so as to maintain optimum thin film deposition conditions.

Referring to FIG. 9 , a step ( S9 ) of cooling the substrate through a susceptor may be included to induce adsorption of the polymer organic thin film formed by polymerization in step ( P7 ). Hereinafter, for concise description of the invention, the above and redundant contents will be omitted.

Although the specific embodiments according to the present invention have been described so far, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments and should not be defined, but should be defined by not only the scope of the claims described later, but also those equivalent to the scope of these claims.

As described above, the present invention has been described by the limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art in the field to which the present invention belongs can make various modifications and transformation is possible Therefore, the spirit of the present invention should be grasped only by the claims described below, and all equivalent or equivalent modifications thereof will be said to belong to the scope of the spirit of the present invention.

1: deposition chamber
2: initiator supply unit
3: monomer supply unit
31: reservoir
32: inlet
32a: one end of inlet
32b: inlet other end
32c: carrier gas injection control unit
33: outlet
33a: mixed gas supply control unit
4: shower head
5, 51: activation unit
6: substrate
7: susceptor
8: vacuum pump, pressure pump
M: mixed gas, I: initiator, C: carrier gas
P _M , P _I : Pressure gauge

Claims (17)

In the chemical vapor deposition (iCVD) apparatus,
deposition chamber;
an initiator supply unit supplying a liquid or gaseous initiator into the deposition chamber;
a monomer supply unit supplying a mixed gas containing a vapor phase monomer and a carrier gas into the deposition chamber;
a shower head disposed so that the initiator and the mixed gas supplied into the deposition chamber are uniformly diffused and descended in the deposition chamber;
an activation unit disposed under the shower head and activating the initiator passing through the shower head; and
A susceptor that supports a substrate on which a polymer organic thin film is deposited through polymerization of the monomers activated by the activated initiator and cools the substrate to induce adsorption of the polymer organic thin film;
The chemical vapor deposition apparatus, characterized in that the initiator supply unit and the monomer supply unit are formed independently.
According to claim 1,
The monomer supply unit,
a reservoir containing a liquid monomer and storing the vaporized monomer from the liquid monomer;
an inlet for injecting the carrier gas into the reservoir; and
and an outlet for supplying the mixed gas including the vapor phase monomer and the carrier gas in the reservoir to the deposition chamber.
According to claim 2,
Chemical vapor deposition apparatus, characterized in that one end of the inlet extending into the reservoir is extended to be submerged in the liquid monomer.
According to claim 2,
Chemical vapor deposition apparatus, characterized in that one end of the inlet extending into the reservoir extends to the surface of the liquid monomer.
According to claim 2,
The chemical vapor deposition apparatus of claim 1, wherein the reservoir includes a heater jacket or a cooling jacket for vaporizing the liquid monomer into the vapor phase monomer and adjusting the amount of the vaporized monomer through temperature control.
According to claim 2,
The chemical vapor deposition apparatus of claim 1 , wherein the monomer supply unit includes a carrier gas injection control unit connected to the other end of the inlet to control an amount or speed of the carrier gas injected into the reservoir.
According to claim 1,
The chemical vapor deposition apparatus of claim 1 , wherein one end of the initiator supply unit is connected to the deposition chamber, and the other end of the initiator supply unit includes an initiator supply control unit configured to control an amount or speed of the initiator supplied to the deposition chamber.
According to claim 1,
The carrier gas is a chemical vapor deposition apparatus comprising argon (Ar), nitrogen (N ₂ ) or oxygen (O ₂ ).
According to claim 1,
The activator includes a filament or a plasma electrode,
The filament supplies thermal energy to activate the initiator, and the plasma electrode activates the initiator through plasma.
In the chemical vapor deposition (iCVD) apparatus,
deposition chamber;
a monomer supply unit supplying a mixed gas containing a vapor phase monomer and a carrier gas into the deposition chamber;
a shower head disposed so that the mixed gas supplied into the deposition chamber can be uniformly diffused and descended inside the deposition chamber;
an activating unit disposed under the shower head and activating the vapor phase monomer passing through the shower head; and
A susceptor that supports a substrate on which a polymer organic thin film is deposited through polymerization of the activated monomer and induces adsorption of the polymer organic thin film by cooling the substrate;
The chemical vapor deposition apparatus of claim 1 , wherein the activation unit includes a plasma electrode and activates the monomer through plasma formed by the plasma electrode.
According to claim 10,
The monomer supply unit,
a reservoir containing a liquid monomer and storing the vaporized monomer from the liquid monomer;
an inlet for injecting the carrier gas into the reservoir; and
and an outlet for supplying the mixed gas including the vapor phase monomer and the carrier gas in the reservoir to the deposition chamber.
According to claim 11,
The chemical vapor deposition apparatus of claim 1, wherein the reservoir includes a heater jacket or a cooling jacket for vaporizing the liquid monomer into the vapor phase monomer and adjusting the amount of the vaporized monomer through temperature control.
According to claim 11,
The chemical vapor deposition apparatus of claim 1 , wherein the monomer supply unit includes a carrier gas injection control unit connected to the other end of the inlet to control an amount or speed of the carrier gas injected into the reservoir.
In the method for manufacturing a polymer organic thin film using a chemical vapor deposition (iCVD) apparatus,
Applying heat to the liquid monomer contained in the reservoir to vaporize it into a gaseous monomer (S1);
Injecting a carrier gas into the reservoir (S2);
Forming a mixed gas including the carrier gas and the vapor phase monomer injected into the reservoir (S3);
supplying the mixed gas into a deposition chamber through a monomer supply unit (S4);
uniformly diffusing and descending the mixed gas supplied into the deposition chamber through the monomer supply unit inside the deposition chamber through a shower head (S5);
activating the vapor phase monomers included in the mixed gas passing through the showerhead through plasma formed by a plasma electrode (S6);
and depositing the polymer organic thin film on the upper surface or side surface of the substrate through polymerization of the activated vapor phase monomer (S7).
According to claim 14,
and (S71) cooling the substrate through a susceptor supporting the substrate to induce adsorption of the polymer organic thin film formed by the polymerization reaction in step (S7). manufacturing method.
In the method for manufacturing a polymer organic thin film using a chemical vapor deposition (iCVD) apparatus,
Applying heat to the liquid monomer contained in the reservoir to vaporize it into a gaseous monomer (P1);
Injecting a carrier gas into the reservoir (P2);
Forming a mixed gas including the carrier gas and the vapor phase monomer injected into the reservoir (P3);
supplying the mixed gas into a deposition chamber through a monomer supply unit (P4);
supplying a liquid or gaseous initiator into the deposition chamber through an initiator supplying part provided independently of the monomer supplying part (P41);
uniformly diffusing and descending the mixed gas and the initiator supplied into the deposition chamber through the monomer supply unit and the initiator supply unit through a shower head (P5);
activating the initiator through a filament for supplying thermal energy or a plasma electrode for forming plasma, and activating the vapor phase monomer included in the mixed gas with the activated initiator (P6);
A method of manufacturing a polymer organic thin film comprising the step (P7) of depositing the polymer organic thin film on an upper surface or side surface of a substrate through polymerization of the activated vapor phase monomer.
According to claim 16,
and (P71) cooling the substrate through a susceptor supporting the substrate to induce adsorption of the polymer organic thin film formed by the polymerization reaction in step (P7). manufacturing method.

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