KR20230100219A - Method and apparatus for treating substrate - Google Patents

Abstract

An embodiment of the present invention relates to a substrate treatment apparatus, which comprises: a support unit which supports and rotates a substrate; a liquid supply unit which supplies a processing liquid to the substrate supported on the support unit; and an irradiation module which radiates a laser beam to a pattern formed on the substrate supported by the support unit and coated with the processing liquid to heat the pattern of the substrate. The irradiation module includes a laser unit which irradiates the laser beam, and an imaging unit which monitors a point at which the laser beam is irradiated. A reference mark is formed on the substrate, and the imaging unit can measure the degree of eccentricity of the substrate by deriving the actual position of the reference mark. The present invention can perform precise etching on the substrate.

Description

Substrate processing method and substrate processing apparatus {METHOD AND APPARATUS FOR TREATING SUBSTRATE}

Embodiments of the present invention relate to a substrate processing method and a substrate processing apparatus.

In order to manufacture a semiconductor device, various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition are performed on a substrate such as a wafer. Various processing liquids and processing gases are used in each process. In addition, a drying process is performed on the substrate to remove the treatment liquid used to treat the substrate from the substrate.

A photo process for forming a pattern on a wafer includes an exposure process. The exposure process is a preliminary work for cutting the semiconductor direct material attached on the wafer into a desired pattern. The exposure process may have various purposes, such as formation of patterns for etching and formation of patterns for ion implantation. In the exposure process, a pattern is drawn with light on the wafer using a mask, which is a kind of 'frame'. When a semiconductor direct material on the wafer, for example, a resist on the wafer, is exposed to light, the chemical properties of the resist are changed according to the pattern by the light and the mask. When a developer is supplied to the resist whose chemical properties are changed according to the pattern, a pattern is formed on the wafer.

In order to precisely perform an exposure process, a pattern formed on a mask must be precisely manufactured. In order to check whether the pattern is formed in a desired shape and/or whether the pattern is precisely formed, an operator inspects the formed pattern using inspection equipment such as a scanning electron microscope (SEM). However, a plurality of patterns are formed on one mask. That is, it takes a lot of time to inspect each of a plurality of patterns in order to inspect one mask.

Accordingly, a monitoring pattern that can represent one pattern group including a plurality of patterns is formed on the mask. In addition, an anchor pattern representing a plurality of pattern groups is formed on the mask. The operator can estimate the quality of the patterns formed on the mask through inspection of the anchor pattern. In addition, the operator can estimate the quality of the patterns included in one pattern group through inspection of the monitoring pattern.

In this way, through the monitoring pattern and the anchor pattern formed on the mask, the operator can effectively reduce the time required for mask inspection. However, in order to increase the accuracy of the mask inspection, it is preferable that the monitoring pattern and the anchor pattern have the same critical dimension (CD).

If etching is performed to match the line width of the monitoring pattern and the line width of the anchor pattern, over-etching may occur in the pattern. For example, the difference between the etching rate for the line width of the monitoring pattern and the etching rate for the anchor pattern may occur several times. , and over-etching may occur in the line width of the anchor pattern. When the etching process is precisely performed in order to minimize the occurrence of such over-etching, the etching process takes a lot of time. Accordingly, a line width correction process (FCC, Fine Critical Dimension Correction) for precisely correcting line widths of patterns formed on the mask is additionally performed.

1 shows a normal distribution of a first line width CDP1 of a mask monitoring pattern and a second line width CDP2 of an anchor pattern before a line width correction process, which is the final step of a mask manufacturing process, is performed. Also, the first line width CDP1 and the second line width CDP2 have sizes smaller than the target line width. And, as can be seen with reference to FIG. 1, the line widths of the monitoring pattern and the anchor pattern are intentionally varied before the line width correction process is performed. And, by additionally etching the anchor pattern in the line width correction process, the line widths of the two patterns are made the same.

In the line width correction process, an etching chemical is supplied onto the substrate so that the first and second line widths CDP1 and CDP2 have target line widths. However, if the etching chemical is uniformly supplied on the substrate, even if one of the first and second line widths CDP1 and CDP2 can reach the target line width, the first line width CDP1 and the second line width ( The other one of CDP2) is difficult to reach the target line width. In addition, the deviation between the first line width CDP1 and the second line width CDP2 does not decrease.

On the other hand, in order to precisely perform the line width correction process, the laser must be accurately irradiated to the position of the pattern to be irradiated. In general, positional information of patterns formed on a mask is known in advance. However, when the mask is seated on the support unit, it is difficult to accurately seat it in the center of the support unit, and accordingly, it is difficult to perform a precise line width correction process when irradiating a laser according to previously known positional information of patterns. Therefore, in order to precisely perform the line width correction process, it is necessary to accurately specify the position of the pattern to be irradiated with the laser. For example, the location of the monitoring pattern and/or the location of the anchor pattern must be accurately specified.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

In addition, an object of an embodiment of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of performing precise etching on a substrate.

In addition, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of uniforming the line width of a pattern formed on a substrate.

In addition, an object of an embodiment of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of specifying a position of a pattern to be irradiated with a laser among patterns formed on a substrate.

In addition, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of measuring the degree of eccentricity of a substrate seated on a support unit.

The problem to be solved by the present invention is not limited to the above-mentioned problems, and problems not mentioned can be clearly understood by those skilled in the art from this specification and the accompanying drawings. There will be.

An embodiment of the present invention discloses an apparatus for processing a substrate. A substrate processing apparatus includes a support unit for supporting and rotating the substrate; a liquid supply unit supplying a processing liquid to the substrate supported by the support unit; and an irradiation module supported by the support unit and irradiating a laser in a pattern formed on the substrate coated with the treatment liquid to heat the pattern of the substrate, wherein the irradiation module comprises a laser unit irradiating the laser. ; and an imaging unit monitoring a point where the laser is irradiated, wherein a reference mark is formed on the substrate, and the imaging unit derives an actual position of the reference mark to measure the degree of eccentricity of the substrate.

The substrate includes a first region including a first vertex, a second region including a second vertex, a third region including a third vertex, and a fourth region including a fourth vertex, The reference mark may include a first fiducial mark formed in the first area, a second fiducial mark provided in the second area, and a third fiducial mark provided in the third area.

The imaging unit may determine the degree of eccentricity of the substrate by matching actual positions of the first to third reference marks with actual positions of the first to third reference marks, respectively.

The imaging unit may specify the actual position of the pattern through the degree of eccentricity of the substrate.

The irradiation module may be swing-moved between a process position for irradiating the substrate with the laser beam and a standby position outside the substrate.

The imaging unit sequentially derives the actual positions of the first to third fiducial marks, the irradiation module is swing-moved so that the irradiation end of the irradiation module is located in the first area, and the support unit moves the substrate By rotating to position the first fiducial mark under the irradiation end, the imaging unit may derive an actual position of the first fiducial mark.

When the imaging unit derives the actual position of the first fiducial mark, the support unit rotates the substrate to position the second fiducial mark below the irradiation end, and the imaging unit determines the position of the second fiducial mark. The actual location can be derived.

When the imaging unit derives the actual position of the second fiducial mark, the support unit rotates the substrate to position the third fiducial mark below the irradiation end, and the imaging unit determines the position of the third fiducial mark. The actual location can be derived.

The substrate may include a first pattern and a second pattern different from the first pattern, and the irradiation module may irradiate the laser with the second pattern.

An embodiment of the present invention discloses a method of processing a substrate. The substrate processing method includes a positional information acquisition step of acquiring actual positional information of a pattern to be irradiated with a laser by measuring the degree of eccentricity of a substrate seated on a support unit; and a processing step of processing the substrate by irradiating the laser with the pattern, wherein the position information obtaining step comprises deriving actual positions of at least three reference marks among a plurality of reference marks formed on the substrate. Deriving a reference mark position; calculating the degree of eccentricity of the substrate; and a pattern position specifying step of obtaining an actual position of a pattern to be irradiated with the laser.

The substrate includes a first region including a first vertex, a second region including a second vertex, a third region including a third vertex, and a fourth region including a fourth vertex, The fiducial marks include a first fiducial mark formed in the first area, a second fiducial mark provided in the second area, a third fiducial mark provided in the third area, and a fourth fiducial mark provided in the fourth area. Can include 4 fiducial marks.

The step of deriving the position of the reference mark may include: deriving a position of a first reference mark for deriving an actual position of the first reference mark; a second reference mark position derivation step of deriving an actual position of the second reference mark; and a third reference mark position derivation step of deriving an actual position of the third reference mark.

The step of deriving the first reference mark position, the step of deriving the second reference mark position, and the step of deriving the third reference mark position are sequentially performed, and the step of deriving the first reference mark position is performed in an irradiation module for irradiating the laser. a first alignment step in which the irradiation end is moved to the first region and the support unit is rotated so that the first fiducial mark is aligned below the irradiation end; and acquiring first fiducial mark position information, wherein an imaging unit included in the irradiation module and monitoring a point where the laser is irradiated detects an actual position of the first fiducial mark.

The step of deriving the position of the second fiducial mark may include: a second alignment step of rotating the supporting unit so that the second fiducial mark is aligned below the irradiation end; and a second fiducial mark position information obtaining step of detecting, by the imaging unit, an actual position of the second fiducial mark.

The step of deriving the position of the third fiducial mark may include: a step of aligning the third position of the supporting unit so that the third fiducial mark is aligned below the irradiation end; and a third fiducial mark position information obtaining step of detecting, by the imaging unit, an actual position of the third fiducial mark.

In the step of calculating the degree of eccentricity of the substrate, the actual positions of the first to third reference marks when the center of the support unit coincides with the center of the substrate and the actual positions of the first to third reference marks, respectively. Matching can be calculated.

In the step of specifying the position of the pattern, the position of the pattern may be specified by applying the calculated degree of eccentricity of the substrate to the position of the pattern when the center of the support unit and the center of the substrate coincide.

In the step of calculating the degree of eccentricity of the substrate, the degree of eccentricity of the substrate may be calculated based on the amount of movement and rotation of the substrate relative to the original position of the substrate using actual position information of the first to third fiducial marks. there is.

The substrate may include a first pattern and a second pattern different from the first pattern, and the laser may be irradiated with the second pattern.

According to one embodiment of the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

In addition, according to an embodiment of the present invention, precise etching of the substrate can be performed.

In addition, according to one embodiment of the present invention, the line width of the pattern formed on the substrate can be made uniform.

In addition, according to an embodiment of the present invention, the position of a pattern to be irradiated with a laser can be specified among the patterns formed on the substrate.

In addition, according to one embodiment of the present invention, the degree of eccentricity of the substrate seated on the support unit can be measured.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram showing a normal distribution of line widths of monitoring patterns and line widths of anchor patterns.
2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a schematic view of a substrate being processed in the liquid processing chamber of FIG. 2 viewed from above.
FIG. 4 is a schematic view of an embodiment of the liquid processing chamber of FIG. 2 .
FIG. 5 is a view of the liquid processing chamber of FIG. 4 viewed from above.
FIG. 6 is a view schematically showing a front view of the irradiation module of FIG. 4 .
FIG. 7 is a view schematically showing the irradiation module of FIG. 6 viewed from above.
FIG. 8 is a diagram schematically showing an embodiment of the detecting member of FIG. 4 .
FIG. 9 is a view schematically showing a state of the detecting member of FIG. 8 viewed from above.
10 is a flow chart showing a substrate processing method according to an embodiment of the present invention.
FIG. 11 is a view showing how the substrate processing apparatus checks an error between a laser irradiation position and a preset target position in the process preparation step of FIG. 10 .
FIG. 12 is a view showing a state of a substrate processing apparatus performing the liquid processing step of FIG. 10 .
FIG. 13 is a view showing a state of a substrate processing apparatus performing the heating step of FIG. 10 .
FIG. 14 is a view showing a state of a substrate processing apparatus performing the rinsing step of FIG. 10 .
FIG. 15 is a flow chart in the location information acquisition step of FIG. 10 .
16(a) is a diagram schematically illustrating a state in which a substrate seated on a support unit is seated in the correct position, and FIG. It is a drawing schematically showing the appearance.
FIG. 17 is a view showing a state of the substrate processing apparatus performing the step of deriving the first fiducial mark position of FIG. 15 .
FIG. 18 is a view showing a state of the substrate processing apparatus performing the step of deriving the position of the second reference mark of FIG. 15 .
FIG. 19 is a view showing the state of the substrate processing apparatus performing the step of deriving the position of the third reference mark of FIG. 15 .

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 2 to 19 .

2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 2 , the substrate processing apparatus 1 includes an index module 10 , a treating module 20 , and a controller 30 . According to one embodiment, when viewed from above, the index module 10 and the processing module 20 may be disposed along one direction.

Hereinafter, the direction in which the index module 10 and the processing module 20 are disposed is defined as a first direction (X), and when viewed from the front, a direction perpendicular to the first direction (X) is defined as a second direction ( Y), and a direction perpendicular to the plane including both the first direction (X) and the second direction (Y) is defined as a third direction (Z).

The index module 10 transfers the substrate M from the container C containing the substrate M to the processing module 20 that processes the substrate M. In addition, the index module 10 stores the substrate M, which has undergone a predetermined process in the processing module 20, into the container C. The length direction of the index module 10 may be formed in the second direction (Y). The index module 10 may have a load port 12 and an index frame 14 .

A container C may be seated in the load port 12 . A substrate M may be accommodated in the container C. The load port 12 may be located on the opposite side of the processing module 20 based on the index frame 14 . A plurality of load ports 12 may be provided. A plurality of load ports 12 may be arranged in a line along the second direction (Y). The number of load ports 12 may increase or decrease depending on process efficiency and footprint conditions of the processing module 20 .

As the container (C), an airtight container such as a front opening unified pod (FOUP) may be used. The container C may be placed in the load port 12 by an operator or a transportation means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. there is.

The index frame 14 provides a transport space for transporting the substrate M. An index robot 120 and an index rail 124 are provided on the index frame 14 . The index robot 120 conveys the substrate M. The index robot 120 may transport the substrate M between the index module 10 and a buffer unit 200 to be described later. The indexing robot 120 includes an indexing hand 122 . A substrate M may be placed on the index hand 122 . The index hand 122 may be provided to be capable of forward and backward movement, rotation about the third direction Z as an axis, and movement along the third direction Z. A plurality of hands 122 may be provided. Each of the plurality of index hands 122 may be spaced apart in a vertical direction. The plurality of index hands 122 may move forward and backward independently of each other.

An index rail 124 is provided within the index frame 14 . The length direction of the index rail 124 is provided along the second direction Y. An index robot 120 may be placed on the index rail 124 , and the index robot 120 may be provided to be linearly movable on the index rail 124 .

The controller 30 may control the substrate processing apparatus 1 . The controller 30 includes a process controller composed of a microprocessor (computer) for controlling the substrate processing apparatus 1, a keyboard for inputting commands and the like for an operator to manage the substrate processing apparatus 1, and substrate processing. A user interface consisting of a display or the like that visualizes and displays the operation status of the apparatus 1, a control program for executing processes executed in the substrate processing apparatus 1 under the control of a process controller, and various data and processing conditions. A storage unit in which a program for executing a process, that is, a process recipe, is stored in each constituent unit may be provided. Also, the user interface and storage may be connected to the process controller. The processing recipe may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

The controller 30 may control the substrate processing apparatus 1 to perform a substrate processing method described below. For example, the controller 30 may control components provided in the liquid processing chamber 400 to perform a substrate processing method described below.

The processing module 20 may include a buffer unit 200 , a transport frame 300 and a liquid processing chamber 400 . The buffer unit 200 may provide a space in which the substrate M carried into the processing module 20 and the substrate M transported out of the processing module 20 temporarily stay. The transport frame 300 may provide a space for transporting the substrate M between the buffer unit 200 and the liquid processing chamber 400 . The liquid processing chamber 400 may perform a liquid processing process of liquid treating the substrate M by supplying liquid onto the substrate M. The processing module 20 may further include a drying chamber, and the drying chamber may perform a drying process of drying the liquid-processed substrate M.

The buffer unit 200 may be disposed between the index frame 14 and the transport frame 300 . The buffer unit 200 may be located at one end of the transport frame 300 . The buffer unit 200 may store a plurality of substrates M therein. A slot (not shown) in which the substrate M is placed may be provided inside the buffer unit 200 . A plurality of slots (not shown) may be provided. A plurality of slots (not shown) may be spaced apart from each other along the third direction (Z). Accordingly, the plurality of substrates M stored in the buffer unit 200 may be spaced apart from each other along the third direction Z and stacked.

A front face and a rear face of the buffer unit 200 may be opened. The front side may be a side facing the index module 10, and the rear side may be a side facing the transport frame 300. The index robot 120 may approach the buffer unit 200 through the front side, and the transfer robot 320 to be described later may access the buffer unit 200 through the rear side.

The transport frame 300 may be provided in a first direction (X) in its longitudinal direction. Liquid processing chambers 400 may be disposed on both sides of the transport frame 300 . When the processing module 20 includes the drying chamber, the liquid processing chamber 400 may be disposed on one side of the transport frame 300 and the drying chamber may be disposed on the other side of the transport frame 300 . The liquid processing chamber 400 and the drying chamber may be disposed on the side of the transport frame 300 . The transfer frame 300 and the liquid processing chamber 400 may be disposed along the second direction (Y). The transfer frame 300 and the drying chamber may be disposed along the second direction (Y). The liquid processing chambers 400 are respectively A X B (A and B are 1 or a natural number greater than 1) along the first direction (X) and the third direction (Z), respectively, on one side or both sides of the transport frame 300. may be provided as an array of On the other side of the transport frame 300, the drying chambers may be provided in an array of A X B (A and B are 1 or a natural number greater than 1, respectively) along the first direction (X) and the third direction (Z).

The transport frame 300 may include a transport robot 320 and a transport rail 324 . The transport robot 320 may transport the substrate M. The transfer robot 320 may transfer the substrate M between the buffer unit 200 and the liquid processing chamber 400 . Also, the transport robot 320 may transport the substrate M between the buffer unit 200 , the liquid processing chamber 400 and the drying chamber. The transfer robot 320 may include a transfer hand 322 on which the substrate M is placed. A substrate M may be placed on the transfer hand 322 . The transfer hand 322 may be provided so as to move forward and backward, rotate about an axis in the third direction Z, and move along the third direction Z. A plurality of hands 322 may be provided spaced apart in the vertical direction. The plurality of hands 322 may move forward and backward independently of each other.

The transport rail 324 may be provided along the length direction of the transport frame 300 within the transport frame 300 . For example, the longitudinal direction of the transport rail 324 may be provided along the first direction X. A transport robot 320 may be placed on the transport rail 324 . The transport robot 320 may be provided on the transport rail 324 to be movable on the transport rail 324 .

FIG. 3 is a schematic view of a substrate being processed in the liquid processing chamber of FIG. 2 viewed from above. Hereinafter, the substrate M processed in the liquid processing chamber 400 according to an embodiment of the present invention will be described in detail with reference to FIG. 3 .

Referring to FIG. 3 , an object to be processed in the liquid processing chamber 400 may be a substrate of any one of a wafer, a glass, and a photo mask. For example, the substrate M processed in the liquid processing chamber 400 according to an embodiment of the present invention may be a photo mask, which is a 'frame' used in an exposure process.

The substrate M may have a quadrangular shape. The substrate M may be a photo mask that is a 'frame' used during an exposure process. At least one fiducial mark AK may be displayed on the substrate M. For example, a plurality of reference marks AK may be formed at each corner region of the substrate M. Referring to FIG. 3 , the fiducial mark AK may include a first fiducial mark AK1 , a second fiducial mark AK2 , a third fiducial mark AK3 , and a fourth fiducial mark AK4 . The substrate M may include a first region including a first vertex, a second region including a second vertex, a third region including a third vertex, and a fourth region including a fourth vertex. can The first fiducial mark AK1 includes a first fiducial mark AK1 formed in a first area on the substrate M, a second fiducial mark AK2 provided in a second area on the substrate M, and a substrate ( A third fiducial mark AK3 provided in a third area on M and a fourth fiducial mark AK4 included in a fourth area on substrate M may be included.

The reference mark AK may be a mark called an alignment key used when aligning the substrate M. Also, the reference mark AK may be a mark used to derive positional information of the substrate M. For example, the imaging unit 4540 to be described below may acquire an image by capturing the fiducial mark AK and transmit the acquired image to the controller 30 . The controller 30 can detect the exact position of the substrate M by analyzing the image including the fiducial mark AK. In addition, the fiducial mark AK may be used to determine the position of the substrate M when transporting the substrate M.

A cell CE may be formed on the substrate M. At least one cell CE may be formed. For example, a plurality of cells CE may be formed. A plurality of patterns may be formed in each cell CE. Patterns formed in each cell CE may be defined as one pattern group. A pattern formed on the cell CE may include an exposure pattern EP and a first pattern P1.

The exposure pattern EP may be used to form an actual pattern on the substrate M. The first pattern P1 may be a pattern representing exposure patterns EP formed in one cell CE. Also, when a plurality of cells CE is provided, a plurality of first patterns P1 may be provided. For example, a first pattern P1 may be provided in each of the plurality of cells CE. However, it is not limited thereto, and a plurality of first patterns P1 may be formed in one cell CE. The first pattern P1 may have a shape in which parts of each of the exposure patterns EP are combined. The first pattern P1 may be called a monitoring pattern. An average value of line widths of the plurality of first patterns P1 may be referred to as a critical dimension monitoring macro (CDMM).

When a worker inspects the first pattern P1 formed in any one cell CE through a scanning electron microscope (SEM), whether the shape of the exposure patterns EP formed in any one cell CE is good or bad is checked. can be estimated Accordingly, the first pattern P1 may function as a pattern for inspection. Unlike the above example, the first pattern P1 may be any one of the exposure patterns EP participating in the actual exposure process. Optionally, the first pattern P1 is a pattern for inspection and may also be an exposure pattern that participates in actual exposure at the same time.

The second pattern P2 may be a pattern representing the exposure patterns EP formed on the entire substrate M. For example, the second pattern P2 may have a shape in which parts of each of the first patterns P1 are combined.

When a worker examines the second pattern P2 through a scanning electron microscope (SEM), it is possible to estimate whether the shape of the exposure patterns EP formed on one substrate M is good or bad. Accordingly, the second pattern P2 may function as a pattern for inspection. The second pattern P2 may be an inspection pattern that does not participate in an actual exposure process. The second pattern P2 may be a pattern for setting process conditions of an exposure apparatus. The second pattern P2 may be called an anchor pattern.

Hereinafter, the liquid processing chamber 400 according to an embodiment of the present invention will be described in detail. In addition, hereinafter, a process performed in the liquid processing chamber 400 will be described as an example of performing a Fine Critical Dimension Correction (FCC) process among manufacturing a mask for an exposure process.

The substrate M to be processed after being brought into the liquid processing chamber 400 may be a substrate M on which pre-processing has been performed. Line widths of the first pattern P1 and the second pattern P2 of the substrate M carried into the liquid processing chamber 400 may be different from each other. According to an embodiment, the line width of the first pattern P1 may be relatively larger than that of the second pattern P2. For example, the line width of the first pattern P1 may have a first width (eg, 69 nm), and the line width of the second pattern P2 may have a second width (eg, 68.5 nm).

FIG. 4 is a schematic view of an embodiment of the liquid processing chamber of FIG. 2 . FIG. 5 is a view of the liquid processing chamber of FIG. 4 viewed from above. 4 and 5, the liquid processing chamber 400 includes a housing 410, a support unit 420, a processing container 430, a liquid supply unit 440, an irradiation module 450, and a coordinate unit ( 490) may be included.

The housing 410 has an inner space. A support unit 420 , a processing container 430 , a liquid supply unit 440 , an irradiation module 450 , and a coordinate unit 490 may be provided in the inner space. In the housing 410, a carry-out port (not shown) through which the substrate M can be carried in and out may be formed. The inner wall surface of the housing 410 may be coated with a material having high corrosion resistance to the chemicals supplied by the liquid supply unit 440 .

An exhaust hole 414 may be formed on the bottom surface of the housing 410 . The exhaust hole 414 may be connected to an exhaust member such as a pump capable of exhausting the internal space. Fume and the like that may be generated in the inner space may be exhausted to the outside of the housing 410 through the exhaust hole 414 .

The support unit 420 supports the substrate M. The support unit 420 may support the substrate M in a processing space provided by a processing container 430 to be described later. The support unit 420 rotates the substrate M. The support unit 420 may include a body 421 , a support pin 422 , a support shaft 426 , and a driving member 427 .

The body 421 may be provided in a plate shape. The body 421 may have a plate shape having a certain thickness. When viewed from the top, the body 421 may have an upper surface provided in a substantially circular shape. An upper surface of the body 421 may have a relatively larger area than the substrate M. A support pin 422 may be installed in the body 421 .

The support pin 422 supports the substrate (M). When viewed from the top, the support pin 422 may have a substantially circular shape. When viewed from above, the support pin 422 may have a shape in which a portion corresponding to a corner region of the substrate M is recessed downward. The support pin 422 may have a first surface and a second surface. For example, the first surface may support a lower portion of the corner region of the substrate M. The second surface may face the side of the corner region of the substrate M. Accordingly, when the substrate M is rotated, the movement of the substrate M in the lateral direction may be restricted by the second surface.

At least one support pin 422 is provided. For example, a plurality of support pins 422 may be provided. Support pins 422 may be provided in numbers corresponding to the number of corner regions of the substrate M having a square shape. The support pins 422 may support the substrate M so that the lower surface of the substrate M and the upper surface of the body 421 are spaced apart from each other.

The support shaft 426 is coupled to the body 421. The support shaft 426 is located below the body 421. The support shaft 426 may be a hollow shaft. A fluid supply line 428 may be formed inside the hollow shaft. The fluid supply line 428 may supply a processing fluid or/and a processing gas to a lower portion of the substrate M. For example, the treatment fluid may include a chemical or rinsing fluid. The chemical may be a liquid having acidic or basic properties. The rinse liquid may be pure water. For example, the processing gas may be an inert gas. The processing gas may dry the lower portion of the substrate M. However, unlike the above example, the fluid supply line 428 may not be provided inside the support shaft 426 .

The support shaft 426 may be rotated by a driving member 427 . The driving member 427 may be a hollow motor. When the driving member 427 rotates the support shaft 426, the body 421 coupled to the support shaft 426 may rotate. The substrate M may be rotated along with the rotation of the body 421 via the support pin 422 .

The processing vessel 430 has a processing space. The processing container 430 has a processing space in which the substrate M is processed. According to one example, the processing container 430 may have a processing space with an open top. The processing container 430 may have a cylindrical shape with an open top. The substrate M may be subjected to liquid treatment and heat treatment within the treatment space. The processing container 430 may prevent the processing liquid supplied to the substrate M from scattering to the housing 410 , the liquid supply unit 440 , and the irradiation module 450 .

The processing container 430 may have a plurality of collection containers 432a, 432b, and 432c. Each of the collection containers 432a, 432b, and 432c may separate and recover different liquids among the liquids used for processing the substrate M. Each of the recovery containers 432a, 432b, and 432c may have a recovery space for recovering liquid used for processing the substrate M. Each of the collection containers 432a, 432b, and 432c may be provided in an annular ring shape surrounding the support unit 420 when viewed from above. When the liquid treatment process is performed, the liquid scattered by the rotation of the substrate M is introduced into the recovery space through the inlet, which is a space formed between the respective recovery cylinders 432a, 432b, and 432c. Different types of treatment liquids may be introduced into the recovery containers 432a, 432b, and 432c.

According to an example, the processing container 430 may include a first collection container 432a, a second collection container 432b, and a third collection container 432c. The first collection container 432a may be provided in an annular ring shape surrounding the support unit 420 . The second collection container 432b may be provided in an annular ring shape surrounding the first collection container 432a. The third collection container 432c may be provided in an annular ring shape surrounding the second collection container 432b.

Recovering lines 434a, 434b, and 434c extending vertically downward on the bottom surface of the respective collection containers 432a, 432b, and 432c may be connected. Each of the recovery lines 434a, 434b, and 434c may discharge the treatment liquid introduced through the respective recovery containers 432a, 432b, and 432c. The discharged treatment liquid may be reused through an external treatment liquid recovery system (not shown).

The processing vessel 430 may be coupled with an elevating member 436 . The elevating member 436 may move the processing container 430 . For example, the elevating member 436 may change the position of the processing container 430 along the third direction Z. The elevating member 436 may be a driving device that moves the processing container 430 in a vertical direction. The elevating member 436 may move the processing container 430 upward while liquid processing and/or heat processing are performed on the substrate M. The elevating member 436 may move the processing container 430 downward when the substrate M is carried into or taken out of the inner space.

The liquid supply unit 440 may supply liquid onto the substrate M. The liquid supply unit 440 may supply a processing liquid for liquid processing the substrate M. The liquid supply unit 440 may supply the treatment liquid to the substrate M supported by the support unit 420 . For example, the liquid supply unit 440 treats a substrate M having a first pattern P1 formed in the plurality of cells CE and a second pattern P2 formed outside the region where the cells CE are formed. liquid can be supplied.

The treatment liquid may be provided as an etching liquid or a rinsing liquid. The etchant may be a chemical. The etchant may etch patterns formed on the substrate M. The etchant may also be called an etchant. The etchant may be a liquid containing a mixture of ammonia, water, and additives and hydrogen peroxide. The rinsing liquid may clean the substrate M. A rinse liquid may be provided as a known chemical liquid.

Referring to FIGS. 4 and 5 , the liquid supply unit 440 may include a nozzle 441 , a fixed body 442 , a rotating shaft 443 , and a rotating member 444 . The nozzle 441 may supply the treatment liquid to the substrate M supported by the support unit 420 . One end of the nozzle 441 may be connected to the fixed body 442 and the other end of the nozzle 441 may extend from the fixed body 442 toward the substrate M. The nozzle 441 may extend along the first direction X from the fixed body 442 . The other end of the nozzle 441 may be bent at a certain angle and extended in a direction toward the substrate M supported by the support unit 420 .

The nozzle 441 may include a first nozzle 441a, a second nozzle 441b, and a third nozzle 441c. Any one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c may supply the chemical of the above-described treatment liquid. In addition, the other one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c may supply a rinsing liquid among the aforementioned treatment liquids. Another one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c is any one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c. It is possible to supply a different kind of chemical from the chemical supplied by

The body 442 may fixedly support the nozzle 441 . The body 442 may be connected to a rotation shaft 443 rotated in the third direction Z by a rotation member 444 . When the rotation member 444 rotates the rotation shaft 443, the body 442 may be rotated in the third direction Z as an axis. Accordingly, the discharge port of the nozzle 441 may be moved between a liquid supply position, which is a position where the treatment liquid is supplied to the substrate M, and a standby position, which is a position where the treatment liquid is not supplied to the substrate M.

FIG. 6 is a view schematically showing a front view of the irradiation module of FIG. 4 . FIG. 7 is a view schematically showing the irradiation module of FIG. 6 viewed from above.

Referring to FIGS. 4 to 7 , the irradiation module 450 may irradiate light to the substrate M. For example, the irradiation module 450 may heat-process the substrate M. In addition, the irradiation module 450 may capture an image or/and video of the heat treatment of the substrate M. The irradiation module 450 may include a housing 4510, a moving unit 4520, a laser unit 4530, and an imaging unit 4540.

The housing 4510 has an installation space therein. A laser unit 4530 and an imaging unit 4540 may be positioned in the installation space of the housing 4510 . For example, a laser unit 4530, a camera unit 4542, and a lighting unit 4544 may be positioned in the installation space of the housing 4510. The housing 4510 protects the laser unit 4530 and the imaging unit 4540 from particles, fume, or liquid that is scattered during processing.

An opening may be formed in a lower portion of the housing 4510 . An irradiation end 4535 to be described below may be inserted into the opening of the housing 4510 . By inserting the irradiation end portion 4535 into the opening of the housing 4510, one end of the irradiation end portion 4535 may protrude from the lower end of the housing 4510.

The moving unit 4520 moves the housing 4510. The moving unit 4520 may move the irradiation end 4535 to be described later by moving the housing 4510 . The moving unit 4520 may include an actuator 4522, a shaft 4524, and a moving member 4526.

The actuator 4522 may be a motor. The actuator 4522 may be connected to the shaft 4524. The actuator 4522 may move the shaft 4524 in a vertical direction. The actuator 4522 can rotate the shaft 4524. As the actuator 4522 rotates the shaft 4524, the irradiation module 450 may be swing-moved. For example, a plurality of actuators 4522 may be provided. One of the plurality of actuators 4522 may be provided as a rotary motor for rotating the shaft 4524, and the other of the plurality of actuators 4522 may be provided as a linear motor for moving the shaft 4524 in the vertical direction. .

Shaft 4524 may be connected to housing 4510 . The shaft 4524 may be connected to the housing 4510 via a moving member 4526. As the shaft 4524 rotates, the housing 4510 may also rotate. Accordingly, the location of the irradiation end portion 4535 to be described later may also be changed. For example, the position of the irradiation end 4535 may be changed in the third direction (Z). In addition, the position of the irradiation end 4535 may be changed with the rotation axis in the third direction Z.

When viewed from above, the center of the irradiation end 4535 may move in an arc around the central axis of the shaft 4524. When viewed from above, the center of the irradiation end 4535 may be moved past the center of the substrate M supported by the support unit 420 . The irradiation end 4535 is moved by the moving unit 4520 between a process position in which the laser L is irradiated to the substrate M and a standby position, which is a position in which the substrate M is not subjected to heat treatment and is in standby. It can be. A coordinate unit 490 to be described later is located in the standby position.

A moving member 4526 may be provided between the housing 4510 and the shaft 4524. The moving member 4526 may be an LM guide. The moving member 4526 can move the housing 4510 laterally. The moving member 4526 may move the housing 4510 along the first direction (X) and/or the second direction (Y). The position of the irradiation end 4535 may be variously changed by the actuator 4522 and the moving member 4526 .

The laser unit 4530 may heat the substrate M. The laser unit 4530 may heat the substrate M supported by the support unit. The laser unit 4530 may heat a partial area of the substrate M. The laser unit 4530 may heat a specific area of the substrate M. The laser unit 4530 may heat the substrate M on which the liquid film is formed by supplying the chemical. The laser unit 4530 may heat the pattern formed on the substrate M. The laser unit 4530 may heat either the first pattern P1 or the second pattern P2. The laser unit 4530 may heat the second pattern P2 of the first pattern P1 and the second pattern P2. According to an embodiment, the laser unit 4530 may irradiate the laser L to heat the second pattern P2.

The laser unit 4530 may include a laser emitter 4531, a beam expander 4532, a tilting member 4533, a lower reflection member 4534, and a lens member 4535. The laser irradiation unit 4531 irradiates a laser (L). The laser irradiation unit 4531 may irradiate a laser L having linearity. The laser L irradiated from the laser irradiation unit 4531 may be irradiated onto the substrate M through sequentially a lower reflection member 4534 and a lens member 4535 to be described later. For example, the laser L irradiated from the laser irradiator 4531 may pass through the lower reflection member 4534 and the lens member 4535 in order and be irradiated to the second pattern P2 formed on the substrate M.

The beam expander 4532 may control the characteristics of the laser L emitted from the laser irradiation unit 4531 . The beam expander 4532 may adjust the shape of the laser L emitted from the laser irradiation unit 4531 . In addition, the beam expander 4532 may adjust the profile of the laser L emitted from the laser irradiator 4531 . For example, the diameter of the laser L emitted from the laser irradiator 4531 may be changed in the beam expander 4532 . The diameter of the laser L irradiated by the laser irradiator 4531 may be expanded or reduced in the beam expander 4532 .

The tilting member 4533 may tilt the irradiation direction of the laser L emitted from the laser irradiation unit 4531 . The tilting member 4533 may rotate the laser irradiation unit 4531 based on one axis. The tilting member 4533 may tilt the irradiation direction of the laser L emitted from the laser irradiation unit 4531 by rotating the laser irradiation unit 4531 . The tilting member 4533 may include a motor.

The lower reflective member 4534 may change the irradiation direction of the laser L emitted from the laser irradiation unit 4531 . For example, the lower reflective member 4534 may change the irradiation direction of the laser L irradiated in a horizontal direction to a vertical downward direction. For example, the lower reflective member 4534 may change the irradiation direction of the laser L to a direction toward an irradiation end portion 4535 described below. The laser L refracted by the lower reflection member 4534 passes through a lens member 4535 to be described later to a substrate M as an object to be processed or a coordinate system 491 provided to a coordinate unit 490 to be described later.

When viewed from above, the lower reflective member 4534 may be positioned to overlap an upper reflective member 4548 described below. The lower reflective member 4534 may be disposed lower than the upper reflective member 4548 . The lower reflective member 4534 may be tilted at the same angle as the upper reflective member 4548.

The lens member 4535 may include a lens 4536 and a lens barrel (not shown). For example, the lens 4536 may be an objective lens. A lens barrel (not shown) may be installed below the lens. The barrel (not shown) may have a substantially cylindrical shape. A lens barrel (not shown) may be inserted into an opening formed at a lower end of the housing 4510 . One end of the lens barrel (not shown) may be positioned to protrude from the lower end of the housing 4510 .

The lens member 4535 may function as an irradiation end portion 4535 through which the laser L is irradiated onto the substrate M. The laser L irradiated by the laser unit 4530 may be irradiated onto the substrate M through the irradiation end portion 4535 . Image taking of camera unit 4542 may be provided through irradiation end 4535 . Light emitted from the lighting unit 4544 may be provided through the irradiation end 4535 .

The imaging unit 4540 may capture an image of the laser L emitted from the laser unit 4530 . The imaging unit 4540 may obtain an image such as a video and/or a photograph of an area to which the laser L is irradiated from the laser module 4330 . The imaging unit 4540 may monitor the laser L emitted from the laser irradiation unit 4531 . The imaging unit 4540 may obtain an image or/and an image of the laser L emitted from the laser irradiation unit 4531 . For example, the imaging unit 4540 may acquire an image such as a video and/or a photo of the laser L irradiated to the coordinate system 491 to be described later, and may transmit the data to the controller 30 . The imaging unit 4540 may include a camera unit 4542 , a lighting unit 4544 , and an upper reflective member 4548 .

The camera unit 4542 acquires an image of the laser L irradiated from the laser irradiation unit 4531 . For example, the camera unit 4542 may acquire an image including a point where the laser L emitted from the laser irradiation unit 4531 is irradiated. Also, the camera unit 4542 acquires an image of the substrate M supported by the support unit 420 .

The camera unit 4542 may be a camera. The camera unit 4542 may be a vision. A direction in which the camera unit 4542 captures an image to obtain an image may be toward an upper reflective member 4548 to be described later. The camera unit 4542 may transmit acquired photos and/or images to the controller 30 .

The lighting unit 4544 may provide light so that the camera unit 4542 can easily obtain an image. The lighting unit 4544 may include a lighting member 4545 , a first reflector 4546 , and a second reflector 4547 . The lighting member 4545 emits light. The lighting member 4545 provides light. Light provided by the lighting member 4545 may be sequentially reflected along the first reflector 4546 and the second reflector 4547 . Light provided by the lighting member 4545 may be reflected from the second reflecting plate 4547 and radiated toward an upper reflecting member 4548 to be described later.

The upper reflective member 4548 can change the imaging direction of the camera unit 4542 . For example, the upper reflective member 4548 may change an imaging direction of the camera unit 4542 in a horizontal direction to a vertical downward direction. For example, the upper reflective member 4548 may change the imaging direction of the camera unit 4542 toward the irradiation end 4535 . The upper reflective member 4548 may change the irradiation direction of light from the lighting member 4545 sequentially passed through the first reflector 4546 and the second reflector 4547 from a horizontal direction to a vertical downward direction. For example, the upper reflective member 4548 may change the irradiation direction of light from the lighting unit 4544 toward the irradiation end portion 4535 .

When viewed from above, the upper reflective member 4548 and the lower reflective member 4534 may overlap each other. The upper reflective member 4548 may be disposed above the lower reflective member 4534 . The upper reflective member 4548 and the lower reflective member 4534 may be tilted at the same angle. The upper reflective member 4548 and the lower reflective member 4534 are configured according to the irradiation direction of the laser L emitted by the laser irradiator 4531, the imaging direction in which the camera unit 4542 acquires an image, and the lighting unit 4544. The irradiation direction of the provided light may have the same axis when viewed from above.

FIG. 8 is a diagram schematically showing an embodiment of the detecting member of FIG. 4 . FIG. 9 is a view schematically showing a state of the detecting member of FIG. 8 viewed from above. As shown in FIG. 5 , the coordinate unit 490 is located in the inner space of the housing 410 . The coordinate unit 490 may be installed in an area below the irradiation end 4535 when the irradiation end 4535 is in a standby position by the moving unit 4520 . That is, the coordinate unit 490 provides a standby position where the laser unit 4530 stands by.

Referring to FIGS. 8 and 9 , the coordinate unit 490 may check whether an error occurs between the irradiation position of the laser L and the preset target position TP. For example, the coordinate unit 490 may be provided in the interior space 412 . In addition, the coordinate unit 490 may be installed in an area below the irradiation end 452 when the irradiation end 452 is in the above-described standby position. The coordinate unit 490 may include a coordinate system 491 , a plate 492 , and a support frame 493 .

The coordinate system 491 may also be referred to as a global coordinate system. The coordinate system 491 may be provided as a line grid. In the coordinate system 491, the coordinates of the center position A may be (0,0). The coordinate system 491 may be disposed below the irradiation end 452 of the heating unit 450 when the heating unit 450 is positioned in the stand-by position. A preset target location TP may be displayed on the coordinate system 491 . In addition, the coordinate system 491 may include a scale to check an error between the target position TP and the irradiation position where the laser L is irradiated. Also, the coordinate system 491 may be installed on the plate 492 . The plate 492 may be supported by a support frame 493 . The height of the coordinate system 491 determined by the plate 492 and the support frame 493 may be the same as that of the substrate M supported by the support unit 420 . For example, the height from the bottom surface of the housing 410 to the top surface of the coordinate system 491 may be the same as the height from the bottom surface of the housing 410 to the top surface of the substrate M supported by the support unit 420 . This is to match the height of the irradiation end 452 when checking an error using the coordinate unit 490 and the height of the irradiation end 452 when heating the substrate M. When the irradiation direction of the laser L irradiated by the laser irradiator 461 is slightly distorted with respect to the third direction Z, the irradiation position of the laser L depends on the height of the irradiation end 452. Since it can be different, the coordinate system 491 can be provided at the same height as the substrate M supported by the support unit 420 .

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described in detail. A substrate processing method described below may be performed by the liquid processing chamber 400 . Also, the controller 30 may control components of the liquid processing chamber 400 so that the liquid processing chamber 400 can perform a substrate processing method described below. For example, the controller 30 includes the support unit 420, the elevating member 436, the liquid supply unit 440, and the irradiation module 450 so that the liquid processing chamber 400 can perform a substrate processing method described below. ), and a control signal for controlling at least one of the coordinate units 490 may be generated.

10 is a flow chart showing a substrate processing method according to an embodiment of the present invention. Referring to FIG. 10, the substrate processing method according to an embodiment of the present invention includes a substrate loading step (S10), a process preparation step (S20), a location information acquisition step (S30), an etching step (S40), and a rinsing step (S50). ), and a substrate unloading step (S60).

In the substrate loading step ( S10 ), the substrate M is loaded into the inner space 412 of the housing 410 . For example, in the substrate loading step ( S10 ), a door (not shown) may open a carry-in/outlet (not shown) formed in the housing 410 . In the substrate loading step ( S10 ), the transfer robot 320 may seat the substrate M on the support unit 420 . While the transfer robot 320 places the substrate M on the support unit 420 , the elevating member 436 may lower the position of the processing container 430 .

The process preparation step (S20) may be performed after the substrate M is completely loaded into the inner space 412 of the housing 410. In the process preparation step (S20), the characteristics of the laser (L) irradiated to the substrate (M) can be detected. The characteristic detection of the laser L in the process preparation step (S20) may be performed when the laser unit 4530 is located in a standby position. For example, the characteristic detection of the laser L in the process preparation step (S20) may be performed when the laser unit 4530 is located in the coordinate unit 490. In the process preparation step ( S20 ), the laser unit 4530 may irradiate the test laser L toward the coordinate system 491 provided to the coordinate unit 490 .

In addition, in the process preparation step (S20), it can be checked whether an error occurs in the irradiation position of the laser (L) irradiated to the substrate (M). For example, in the process preparation step (S20), the laser unit 4530 may irradiate the test laser L to the coordinate system 491 of the coordinate unit 490. FIG. 11 is a view showing how the substrate processing apparatus checks an error between a laser irradiation position and a preset target position in the process preparation step of FIG. 10 . When the test laser L irradiated by the laser unit 4530 coincides with the preset target position TP indicated on the coordinate system 491 as shown in FIG. It is determined that it is not, and the following location information acquisition step (S30) may be performed. In addition, in the process preparation step (S20), it is not only checked whether an error occurs in the irradiation position of the laser L, but also components of the liquid processing chamber 400 may be returned to their initial states.

In the location information acquisition step (S30), the location of the substrate M may be confirmed. In the location information acquisition step (S30), location information of patterns formed on the substrate M may be obtained. The data on the location information acquired in the location information acquisition step ( S30 ) may include coordinate data about the center of the substrate M and data about the location information of the patterns. In the positional information acquisition step (S30), positional information of the substrate M to which the chemical C and the rinsing liquid R are to be supplied may be checked. In addition, in the location information acquisition step (S30), location information of patterns to be irradiated with the laser L may be checked. For example, location information of the first pattern P1 or location information of the second pattern P2 may be obtained. Also, in the location information acquisition step (S30), location information of the first to fourth fiducial marks AK may be obtained. A detailed description of the location information acquisition step (S30) will be described later.

Etching step (S40) may perform an etching process for the pattern formed on the substrate (M). In the etching step (S40), the pattern formed on the substrate M may be etched so that the line width of the first pattern P1 and the line width of the second pattern P2 match each other. For example, the etching step ( S40 ) may be a line width correction process for correcting a difference in line widths between the first pattern P1 and the second pattern P2 . The etching step (S40) may include a liquid treatment step (S41) and a heating step (S42).

FIG. 12 is a view showing a state of a substrate processing apparatus performing the liquid processing step of FIG. 10 . Referring to FIG. 12 , the liquid processing step ( S41 ) may be a step in which the liquid supply unit 440 supplies a chemical (C) as an etchant to the substrate (M). In the liquid processing step ( S41 ), the support unit 420 may not rotate the substrate M. This is to minimize the displacement of the substrate M in order to accurately irradiate the laser L in a specific pattern in the heating step S42 to be described later.

The amount of the chemical (C) supplied in the liquid processing step (S41) may be supplied in an amount capable of forming a puddle of the chemical (C) supplied on the substrate (M). For example, the chemical (C) supplied in the liquid treatment step (S41) covers the entire top surface of the substrate (M), but the chemical (C) does not flow down from the substrate (M), or even if it flows down, the amount is not large. can be supplied. In addition, the chemical (C) can be supplied to the entire upper surface of the substrate (M) while changing the position of the nozzle 441 as needed.

In the above-described embodiment, supplying the chemical (C) on the substrate (M) without rotating the substrate (M) in the liquid processing step (S41) has been described as an example, but is not limited thereto. For example, the chemical (C) may be supplied on the substrate (M) while rotating the substrate (M) also in the liquid processing step (S41).

FIG. 13 is a view showing a state of a substrate processing apparatus performing the heating step of FIG. 10 . Referring to FIG. 13 , in the heating step (S42), the substrate M may be heated by irradiating a laser beam L onto the substrate M. In the heating step (S42), the irradiation module 450 may heat the substrate M by irradiating a laser beam onto the substrate M on which the liquid film is formed. In the heating step (S42), the laser (L) may be irradiated to a specific area of the substrate (M). The temperature of a specific region of the substrate M irradiated with the laser L may increase. Accordingly, the degree of etching by the chemical (C) in the region irradiated with the laser (L) may be increased.

In the heating step (S42), the laser (L) may be irradiated to any one of the first pattern (P1) and the second pattern (P2). For example, the laser (L) may be irradiated only to the second pattern (P2) of the first pattern (P1) and the second pattern (P2). Accordingly, the etching ability of the second pattern P2 of the chemical (C) is improved. The line width of the first pattern P1 may be changed from the first width (eg, 69 nm) to a target line width (eg, 70 nm). Also, the line width of the second pattern P2 may be changed from the second width (eg, 68.5 nm) to a target line width (eg, 70 nm). That is, the line width deviation of the pattern formed on the substrate M may be minimized by improving the etching capability of a partial region of the substrate M.

FIG. 14 is a view showing a state of a substrate processing apparatus performing the rinsing step of FIG. 10 . Referring to FIG. 14 , the rinsing step ( S50 ) removes process by-products generated in the etching step ( S40 ) from the substrate (M). In the rinsing step (S50), the rinsing liquid R may be supplied to the rotating substrate M. Process by-products formed on the substrate M may be removed by supplying a rinsing liquid to the substrate M. In addition, in order to dry the rinsing liquid R remaining on the substrate M as needed, the support unit 420 rotates the substrate M at high speed to dry the rinsing liquid R remaining on the substrate M. can be removed.

In the substrate unloading step ( S60 ), the processed substrate M may be transported from the inner space 412 . In the step of transporting the substrate ( S60 ), a door (not shown) may open a transport inlet (not shown) formed in the housing 410 . Also, in the substrate unloading step ( S60 ), the transfer robot 320 may unload the substrate M from the support unit 420 and transport the unloaded substrate M from the internal space 412 .

Hereinafter, the location information obtaining step according to an embodiment of the present invention will be described in detail. 15 is a flow chart in the position information acquisition step of FIG. 10, and FIG. 16 (a) is a diagram schematically showing a state in which the substrate seated on the support unit is seated in the correct position. (b) is a view schematically showing a state in which the substrate is seated in an eccentric state.

The substrate M may be seated on the support unit M by the transfer robot 320 . At this time, as shown in FIG. 16 (a), it is preferable that the substrate M is seated on the support unit 420 so that the center of the substrate M and the center of the support unit 420 coincide. Hereinafter, the position of the substrate M when the center of the substrate M coincides with the center of the support unit 420 is referred to as a correct position. When the substrate M is in the correct position, various patterns and marks formed on the substrate M may also have the correct position. When the substrate M is in the correct position, information about the correct positions of various patterns formed on the substrate M and the correct positions of the marks may be values known in advance. For example, the location information of the first pattern P1, the location information of the second pattern P2, the location information of the first fiducial mark AK1, the location information of the second fiducial mark AK2, The location information of the third fiducial mark AK3 and the location information of the fourth fiducial mark AK4 may be known values or predetermined values.

Distortion may occur while the substrate M is seated on the support unit 420 by the transfer unit 320 . In this case, as shown in FIG. 16(b) , the substrate M may be seated on the support unit 420 in a state where it is eccentric with respect to the original position. In this case, the center of the substrate M and the center of the support unit 420 may not coincide. Hereinafter, the position of the substrate M when the center of the substrate M does not coincide with the center of the support unit 420 is referred to as an eccentric position or an actual position.

When the substrate M is located at an eccentric position, the actual position of various patterns and marks formed on the substrate M may be eccentric with respect to the normal position. For example, the actual position of the first pattern (P1) is different from the original position of the first pattern (P1), the actual position of the second pattern (P2) is different from the original position of the second pattern (P2), Actual positions of the first to fourth reference marks AK1 to AK4 may be different from the actual positions of the first to fourth reference marks AK1 to AK4.

As such, when the substrate (M) is located at an eccentric position, since the actual position information of the patterns and marks on the substrate (M) does not match the actual position information, in order to irradiate the laser (L) to the exact position, the substrate (M) ), it is necessary to obtain actual positional information of patterns and marks on it. Therefore, in the position information acquisition step (S30) according to an embodiment of the present invention, the actual position information of the substrate M (eccentric position information), the actual position information of the pattern irradiated with the laser L (eccentric position information) and the substrate Actual location information (eccentric location information) of the fiducial mark AK on (M) can be obtained. Location information may include coordinate values.

Referring to FIG. 15 , in the positional information acquisition step (S30) according to an embodiment of the present invention, actual positional information of the reference mark AK, which is a mark used for aligning the substrate M, is derived, and the actual position of the reference mark AK The degree of eccentricity of the substrate M is calculated according to the positional information, and the actual positional information of the pattern can be specified by applying the degree of eccentricity of the substrate M to the pattern to be irradiated with the laser L. Hereinafter, a location information acquisition method (S30) according to an embodiment of the present invention will be described in detail.

Referring to FIG. 15 , the location information acquisition step ( S30 ) may include a first reference mark position derivation step ( S31 ).

FIG. 17 is a view showing a state of the substrate processing apparatus performing the step of deriving the first fiducial mark position of FIG. 15 .

Referring to FIGS. 15 and 17 , the first reference mark position derivation step ( S31 ) may include a first position alignment step ( S311 ) and first reference mark position information acquisition step ( S312 ). In the first alignment step ( S311 ), the positions of the first fiducial mark AK1 on the substrate M and the irradiation end portion 4535 of the irradiation module 450 are aligned. In the first alignment step (S311), the positions of the first fiducial mark AK1 and the irradiation end 4535 of the irradiation module 450 are aligned so that the first fiducial mark AK1 is located under the irradiation module 4535. can do. Through this, the first fiducial mark AK1 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 .

In the first position alignment step (S311), the irradiation end 4535 of the irradiation module 450 is moved between a standby position and a process position in which the substrate M is irradiated with the laser (L) and heated, and the support unit 420 This may be performed by rotating the substrate M in one direction. First, the irradiation end portion 4535 of the irradiation module 450 is moved to a first area on the substrate M including the first fiducial mark AK1. At this time, the irradiation end 4535 may be swing-moved at a predetermined angle with the shaft 4524 as an axis. When the irradiation end 4535 is moved to the first region, the support unit 420 is rotated in one direction. At this time, as shown in FIG. 17 , the irradiation end 4535 and the first fiducial mark AK1 may be aligned with each other. When the irradiation end 4535 and the first fiducial mark AK1 are aligned with each other, the first fiducial mark AK1 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 . At this time, the imaging unit 4540 may acquire at least one data of a photo, image, and video data for the first fiducial mark AK1.

First fiducial mark location information acquisition step (S312) Through any one of photo, image, and video data acquired by the imaging unit 4540, the imaging unit 4540 obtains actual location information of the first fiducial mark AK1. can be obtained The imaging unit 4540 may obtain a coordinate value of the actual position of the first fiducial mark AK1 through any one of the acquired photo, image, and video data.

Referring to FIG. 15 , the location information acquisition step ( S30 ) may include a second reference mark position derivation step ( S32 ).

FIG. 18 is a view showing a state of the substrate processing apparatus performing the step of deriving the position of the second reference mark of FIG. 15 .

Referring to FIGS. 15 and 18 , the second reference mark position derivation step ( S32 ) may include a second position alignment step ( S321 ) and second reference mark position information acquisition step ( S322 ). In the second alignment step ( S321 ), positions of the second fiducial mark AK2 on the substrate M and the irradiation end portion 4535 of the irradiation module 450 are aligned. In the second position alignment step ( S321 ), the positions of the second fiducial mark AK2 and the irradiation end 4535 of the irradiation module 450 are aligned so that the second fiducial mark AK2 is located under the irradiation module 4535 . can do. Through this, the second fiducial mark AK2 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 .

The step of deriving the position of the second reference mark ( S32 ) may be performed after the step of deriving the position of the first reference mark ( S311 ). That is, the step of deriving the position of the second fiducial mark ( S321 ) may be performed after acquiring the actual position information of the first fiducial mark AK1 .

In the second position alignment step (S321), the irradiation end 4535 of the irradiation module 450 is moved between a standby position and a process position in which the substrate M is irradiated with the laser L and heated, and the support unit 420 This may be performed by rotating the substrate M in one direction. However, since the second position alignment step (S321) is performed after the first reference mark position deriving step (S311) is performed, the irradiation end ( 4535) may be in a swing-moved state at a predetermined angle. In this case, the irradiation module 450 is not moved and the support unit 420 is rotated in one direction so that the irradiation end 4535 and the second reference position AK2 may be aligned.

However, if the irradiation end 4535 of the irradiation module 450 is in the standby position when the second position alignment step (S321) is performed, the irradiation module 450 determines that the irradiation end 4535 is the second reference mark ( AK2) is first moved to the second region on the substrate M, and then the support unit 420 may be rotated in one direction.

When the support unit 420 is rotated, the irradiation end 4535 and the second fiducial mark AK2 may be aligned with each other, as shown in FIG. 18 . When the irradiation end 4535 and the second fiducial mark AK2 are aligned with each other, the second fiducial mark AK2 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 . In this case, the imaging unit 4540 may acquire at least one data of a photo, image, and video data for the second fiducial mark AK2.

In the second fiducial mark location information acquisition step ( S322 ), actual location information of the second fiducial mark AK2 may be acquired through any one of photo, image, and video data obtained by the imaging unit 4540 . The imaging unit 4540 may obtain a coordinate value of the actual position of the second fiducial mark AK2 through any one of the acquired photo, image, and video data.

Referring to FIG. 15 , the location information acquisition step ( S30 ) may include a third reference mark position derivation step ( S33 ).

FIG. 19 is a view showing the state of the substrate processing apparatus performing the step of deriving the position of the third reference mark of FIG. 15 .

Referring to FIGS. 15 and 19 , the step of deriving the position of the third reference mark ( S33 ) may include a step of aligning the third position ( S331 ) and obtaining third reference mark position information ( S332 ). In the third alignment step ( S331 ), the positions of the third fiducial mark AK3 on the substrate M and the irradiation end portion 4535 of the irradiation module 450 are aligned. In the third alignment step (S331), the position of the third fiducial mark AK3 and the irradiation end 4535 of the irradiation module 450 are aligned so that the third fiducial mark AK3 is located under the irradiation module 4535. can do. Through this, the third fiducial mark AK3 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 .

The third reference mark position deriving step ( S33 ) may be performed after the second reference mark position deriving step ( S32 ) is performed. That is, the step of deriving the position of the third fiducial mark ( S33 ) may be performed after acquiring the actual position information of the second fiducial mark AK2 .

In the third position alignment step (S331), the irradiation end 4535 of the irradiation module 450 is moved between a standby position and a process position in which the substrate M is irradiated with the laser L and heated, and the support unit 420 This may be performed by rotating the substrate M in one direction. However, since the third position alignment step (S331) is performed after the second reference mark position derivation step (S32) is performed, the irradiation end ( 4535) may be in a swing-moved state at a predetermined angle. In this case, the irradiation module 450 is not moved and the support unit 420 is rotated in one direction so that the irradiation end 4535 and the third reference position AK3 may be aligned.

However, when the third position alignment step (S331) is performed, if the irradiation end 4535 of the irradiation module 450 is in the standby position, the irradiation module 450 determines that the irradiation end 4535 is the third reference mark ( AK3) is first moved to the third region on the substrate M, and then the support unit 420 may be rotated in one direction.

When the support unit 420 is rotated, the irradiation end 4535 and the third fiducial mark AK3 may be aligned with each other, as shown in FIG. 19 . When the irradiation end 4535 and the third fiducial mark AK3 are aligned with each other, the third fiducial mark AK3 may be included in the imaging area of the imaging unit 4540 of the irradiation module 450 . At this time, the imaging unit 4540 may acquire at least one data of a photo, image, and video data for the third fiducial mark AK3.

In the third fiducial mark location information acquisition step ( S332 ), actual location information of the third fiducial mark AK3 may be acquired through any one of photo, image, and video data acquired by the imaging unit 4540 . The imaging unit 4540 may acquire a coordinate value of the actual position of the third fiducial mark AK3 through any one of the acquired photo, image, and video data.

Referring to FIG. 15 , the location information acquisition step ( S30 ) may include a substrate eccentricity calculation step ( S34 ). The step of calculating the degree of eccentricity of the substrate ( S34 ) may be performed by the imaging unit 3540 . Alternatively, the step of calculating the degree of eccentricity of the substrate ( S34 ) may be performed by the controller 30 .

In the step of calculating the degree of eccentricity of the substrate (S34), the actual positions of the first to third reference marks AK1 to AK3 and the actual positions of the first to third reference marks AK1 to AK3 are matched, respectively, so that the substrate M The degree of eccentricity can be calculated. In the step of calculating the degree of eccentricity of the substrate (S34), the coordinates of the actual positions of the first to third reference marks AK1 to AK3 are matched with the coordinates of the actual positions of the first to third reference marks AK1 to AK3, respectively, so that the substrate The degree of eccentricity of (M) can be calculated. In step S34 of calculating the degree of eccentricity of the substrate, the actual position information (eccentric position information) of the first reference mark AK1 is compared with the actual position information of the first reference mark AK1, and the actual position information of the second reference mark AK2 is compared. The location information (eccentric location information) is compared with the exact location information of the second fiducial mark AK2, and the actual location information (eccentric location information) of the third fiducial mark AK3 is compared to the exact location of the third fiducial mark AK3. The degree of eccentricity of the substrate M can be calculated by comparing with the information.

In addition, in the step of calculating the degree of eccentricity of the substrate (S34), by using the actual position information of the first to third reference marks AK1 to AK4, the amount of movement and rotation of the substrate M relative to the original position of the substrate M is calculated. Based on this, the degree of eccentricity of the substrate M can be calculated.

In addition, the imaging unit 4540 includes the left and right widths of the substrate M, coordinate data for the center point of the substrate M, the first pattern P1 and the second pattern P2 in the substrate M, and exposure. Coordinate data for the position of the pattern EP may be stored in advance. The imaging unit 4540 may calculate the degree of eccentricity of the substrate M based on the acquired coordinate values of the reference mark AK and the previously stored data.

Referring to FIG. 15 , the location information obtaining step (S30) may include a pattern location specifying step (S35).

In the location information acquisition step (S30), the position of the pattern may be specified by applying the degree of eccentricity of the substrate M to the exact location information of the pattern. In this case, the pattern may be the first pattern P1 or the second pattern P2. For example, the pattern may be the second pattern P2.

In the above, it has been illustrated and described that four fiducial marks AK are formed on the substrate M, but it is not limited thereto, and various numbers of fiducial marks AK may be formed on the substrate M as needed. there is. In addition, although it has been illustrated and described that four fiducial marks AK are formed near the vertices of the substrate M, it is not limited thereto, and the positions of the fiducial marks AK may vary. In addition, in the above, it has been described that the degree of eccentricity of the substrate M is calculated through the actual positions of the three reference marks AK among the plurality of reference marks AK in the position information acquisition step (S30), but is not limited thereto. . For example, the degree of eccentricity of the substrate M may be determined through the actual positions of less than three fiducial marks AK. As another example, the degree of eccentricity of the substrate M may be determined through the actual positions of the four reference marks AK. As another example, when four or more reference marks AK are provided on the substrate M, the degree of eccentricity of the substrate M is determined through the actual positions of the four or more reference marks AK. can judge

In an embodiment of the present invention, in a substrate processing apparatus 1 operated using a swing-moving irradiation module 450 and a spinning support unit 420, a specific position on a substrate M (for example, an anchor pattern) Position) relates to an apparatus and method for measuring the degree of eccentricity of a substrate (M) seated on a support unit (420).

In general, when the substrate (M) is positioned in the correct position, information on the exact position of the pattern on the substrate (M) is known, but it is difficult for the substrate (M) to be accurately seated in the correct position on the support unit 420. There is a problem in that it is difficult to accurately specify the actual position of the pattern on the eccentric substrate M. In this case, there is a problem in that it is difficult for the irradiation module 450 to irradiate the laser L at an accurate position.

Accordingly, the embodiment of the present invention uses the imaging unit 4540 installed in the irradiation module 450 to detect the actual detection of at least three fiducial marks AK among a plurality of fiducial marks AK present in the substrate M. The degree of eccentricity of the substrate M may be calculated by detecting positional information and matching the positional information of the three reference marks AK. Using the degree of eccentricity of the substrate (M), it is possible to specify the exact location information of the pattern to be irradiated with the laser (L).

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Claims (19)

In the apparatus for processing the substrate,
a support unit supporting and rotating the substrate;
a liquid supply unit supplying a processing liquid to the substrate supported by the support unit; and
An irradiation module supported by the support unit and irradiating a laser to a pattern formed on the substrate coated with the treatment liquid to heat the pattern of the substrate;
The investigation module,
a laser unit irradiating the laser; and
An imaging unit monitoring a point where the laser is irradiated,
A reference mark is formed on the substrate,
The imaging unit measures the degree of eccentricity of the substrate by deriving the actual position of the reference mark. According to claim 1,
The substrate includes a first region including a first vertex, a second region including a second vertex, a third region including a third vertex, and a fourth region including a fourth vertex,
The reference mark includes a first fiducial mark formed in the first area, a second fiducial mark provided in the second area, and a third fiducial mark provided in the third area. According to claim 2,
The imaging unit determines the degree of eccentricity of the substrate by matching the actual positions of the first to third reference marks with the actual positions of the first to third reference marks, respectively. According to claim 3,
The imaging unit specifies the actual position of the pattern through the degree of eccentricity of the substrate. According to claim 2,
The irradiation module is swing-moved between a process position for irradiating the laser with the substrate and a standby position outside the substrate. According to claim 5,
the imaging unit sequentially derives actual positions of the first to third fiducial marks;
The irradiation module is swing-moved so that an irradiation end of the irradiation module is located in the first area,
The support unit rotates the substrate to position the first fiducial mark below the irradiation end,
The imaging unit derives the actual position of the first fiducial mark. According to claim 6,
when the imaging unit derives the actual position of the first fiducial mark, the support unit rotates the substrate to position the second fiducial mark below the irradiation end;
The imaging unit derives the actual position of the second fiducial mark. According to claim 7,
when the imaging unit derives the actual position of the second fiducial mark, the support unit rotates the substrate to position the third fiducial mark below the irradiation end;
The imaging unit derives the actual position of the third fiducial mark. According to any one of claims 1 to 8,
The substrate includes a first pattern and a second pattern different from the first pattern,
The irradiation module irradiates the laser with the second pattern. In the method of treating the substrate,
a positional information acquisition step of obtaining actual positional information of a pattern to be irradiated with a laser by measuring the degree of eccentricity of the substrate seated on the support unit; and
And a process treatment step of processing the substrate by irradiating the laser with the pattern,
The step of obtaining location information is,
a reference mark position derivation step of deriving actual positions of at least three reference marks among a plurality of reference marks formed on the substrate;
calculating the degree of eccentricity of the substrate; and
A substrate processing method comprising a pattern position specifying step of obtaining an actual position of a pattern to be irradiated with the laser. According to claim 10,
The substrate includes a first region including a first vertex, a second region including a second vertex, a third region including a third vertex, and a fourth region including a fourth vertex,
The fiducial mark includes a first fiducial mark formed in the first area, a second fiducial mark provided in the second area, a third fiducial mark provided in the third area, and a fiducial mark provided in the fourth area. A substrate processing method comprising a fourth fiducial mark. According to claim 11,
The step of deriving the reference mark position,
a first fiducial mark position derivation step of deriving an actual position of the first fiducial mark;
a second reference mark position derivation step of deriving an actual position of the second reference mark; and
and a third reference mark position derivation step of deriving an actual position of the third reference mark. According to claim 12,
The first reference mark position derivation step, the second reference mark position derivation step, and the third reference mark position derivation step are sequentially performed,
The first reference mark position derivation step,
a first alignment step of moving an irradiation end of the irradiation module for irradiating the laser to the first area and rotating the support unit so that the first fiducial mark is aligned below the irradiation end; and
and acquiring first fiducial mark position information, wherein an imaging unit included in the irradiation module and monitoring a point where the laser is irradiated detects an actual position of the first fiducial mark. According to claim 13,
The second reference mark position derivation step,
a second alignment step in which the support unit is rotated so that the second fiducial mark is aligned below the irradiation end; and
and a second fiducial mark position information obtaining step of detecting, by the imaging unit, an actual position of the second fiducial mark. According to claim 14,
The step of deriving the position of the third reference mark,
a third alignment step in which the support unit is rotated so that the third fiducial mark is aligned below the irradiation end; and
and a third fiducial mark position information acquisition step in which the imaging unit detects an actual position of the third fiducial mark. According to claim 10,
The step of calculating the degree of eccentricity of the substrate,
The substrate processing method of matching and calculating the actual positions of the first to third reference marks and the actual positions of the first to third reference marks when the center of the support unit coincides with the center of the substrate. According to claim 16,
The pattern position specifying step,
The substrate processing method of specifying the position of the pattern by applying the degree of eccentricity of the substrate calculated to the exact position of the pattern when the center of the support unit and the center of the substrate coincide. According to claim 16,
The step of calculating the degree of eccentricity of the substrate,
The substrate processing method of calculating the degree of eccentricity of the substrate based on the amount of movement and rotation of the substrate relative to the original position of the substrate using actual position information of the first to third fiducial marks. According to any one of claims 10 to 18,
The substrate includes a first pattern and a second pattern different from the first pattern,
The substrate processing method in which the laser is irradiated with the second pattern.

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