KR20230097150A - Metal mask for deposition and method for manufacturing the metal mask for deposition - Google Patents

Abstract

A metal mask for deposition includes: a surface having a first opening facing an evaporation source provided in a deposition apparatus; a back surface having a second opening smaller than the first opening as a surface opposite to the surface; A metal mask substrate for vapor deposition having a through hole having an inverted truncated cone shape as a through hole passing through the two openings is provided. The metal mask for vapor deposition is located on the surface and the inner wall surface defining the through hole, and further includes an antifouling layer containing a fluorine compound. On the back surface, no halogen-based compound containing a halogen atom is located, the contact angle with respect to water on the surface of the antifouling layer is 90° or more, and the surface roughness Sa on the surface of the metal mask substrate for deposition is 10 nm or more. less than 80 nm.

Description

Metal mask for deposition and method for manufacturing the metal mask for deposition

The present disclosure relates to a metal mask for deposition and a method for manufacturing the metal mask for deposition.

BACKGROUND OF THE INVENTION In display devices of small devices typified by smart phones and head-mounted displays, and organic EL displays attracting attention as flexible displays in the future, high resolution is required. As the main methods for forming the pixels of the organic EL display, a deposition method and a coating method are mentioned. Currently, a deposition method is mainly employed as a method of forming a pixel of an organic EL display in terms of device characteristics. For this reason, it is common to form the light emitting layer or the like included in the pixel by a vapor deposition method.

A metal mask for deposition used in a deposition process for forming a pixel has a through hole. In the deposition process, organic molecules for forming a desired pixel pattern on a substrate pass through the through hole. The organic molecule is a light emitting material sublimated from an evaporation source or the like. If patterning of pixels by vapor deposition, that is, formation of pixels, is repeated using the same metal mask for vapor deposition, organic molecules are deposited on the surface of the metal mask for vapor deposition facing the evaporation source, and organic molecules are deposited in the through holes. The accumulation of molecules causes clogging, which causes patterning defects. Therefore, it is necessary to perform cleaning to remove organic molecules from the surface of the metal mask for deposition and the pattern portion of the metal mask for deposition, that is, the through hole.

Meanwhile, organic molecules fly into the metal mask for deposition from multiple directions, that is, from multiple directions, and these organic molecules are attached to a substrate for forming a pixel pattern. Therefore, in the through hole included in the end face of the metal mask for deposition, when the metal mask base material for deposition is etched from only one side to thereby form the through hole, the surface facing the deposition source faces the substrate. It is required that the angle formed by the plane connecting the back surface to the back surface is 45° or less. On the other hand, in the case where the metal mask substrate for deposition is etched from both the front and back surfaces to thereby form through holes, the surface that connects the surface facing the evaporation source and the part where the surface concave portion extends to the back concave portion is It is required that the angle formed with the back surface be 45° or less. Due to this design constraint, the thickness of the metal mask for deposition must be reduced along with the increase in pixel density, that is, high resolution.

However, with thinning of the metal mask for vapor deposition, the metal mask for vapor deposition is easily deformed by cleaning. A metal mask for deposition is generally cleaned by ultrasonic cleaning. Since the metal mask for deposition is easily deformed by cleaning, treatment of the surface of the substrate forming the metal mask for deposition with an omniphobic material such as a fluorine-containing material has been studied (for example, see Patent Document 1). . In a metal mask for a printing plate, fluorine treatment of the metal surface has been studied (see Patent Document 2, for example).

Japanese Unexamined Patent Publication No. 2019-210496 Japanese Unexamined Patent Publication No. 2006-205716

However, there is a concern that halogen-based substances such as fluorine affect the reduction in light-emitting characteristics and lifetime of organic EL devices, so that the transfer of the halogen-based substances from the metal mask for deposition to the substrate is a problem.

A metal mask for deposition to solve the above problems has a surface having a first opening facing a deposition source provided in a deposition apparatus, and a second opening smaller than the first opening as a surface opposite to the surface. A metal mask substrate for deposition having a back surface and a through hole having an inverted truncated cone shape as a through hole passing through the first opening and the second opening. The metal mask for deposition further includes an antifouling layer containing a fluorine compound on the surface and the inner wall surface of the through hole. On the back surface, no halogen-based compound containing a halogen atom is located, the contact angle with respect to water on the surface of the antifouling layer is 90° or more, and the surface roughness Sa of the surface of the metal mask substrate for deposition is is 10 nm or more and 80 nm or less.

A metal mask for deposition to solve the above problems has a surface having a first opening facing a deposition source provided in a deposition apparatus, and a second opening smaller than the first opening as a surface opposite to the surface. A through hole passing through the back surface, the first opening and the second opening, including the first opening and having a first hole portion having an inverted truncated cone shape, including the second opening and having a truncated cone shape, In addition, a metal mask substrate for deposition having the through hole including a second hole smaller than the first hole is provided. The metal mask for deposition includes an antifouling layer containing a fluorine compound on the surface and an inner wall surface defining the first hole portion, and a halogen atom is contained on the back surface and the inner wall surface defining the second hole portion. is not located, the contact angle with respect to water on the surface of the antifouling layer is 90° or more, and the surface roughness Sa on the surface of the metal mask substrate for deposition is 10 nm or more and 80 nm or less.

In the metal mask for vapor deposition, the material forming the metal mask substrate for vapor deposition may be an iron-nickel alloy or an iron-nickel-cobalt alloy.

In the metal mask for deposition, the thickness of the metal mask substrate for deposition may be 1 μm or more and 100 μm or less.

A method of manufacturing a metal mask for deposition to solve the above problems is a surface for forming a first opening facing an deposition source provided in a deposition apparatus, and a second opening located on the opposite side to the surface and smaller than the first opening. An inverted truncated pyramid shape is formed by preparing a metal metal mask substrate for deposition having a rear surface for forming two openings, forming a resin layer on the rear surface, and wet etching the metal mask substrate for deposition from the surface. Forming a through hole with, thereby forming the first opening on the surface, and also forming the second opening on the surface, on the surface and the inner wall surface defining the through hole, a fluorine compound forming an antifouling layer containing; and, after forming the antifouling layer, exposing the metal mask substrate for deposition and the resin layer to an alkaline solution, thereby removing the resin layer from the substrate from the metal mask for deposition. including chemical removal.

In the method for manufacturing the metal mask for deposition, the resin layer may be made of polyimide.

A method of manufacturing a metal mask for deposition to solve the above problems is a surface for forming a first opening facing an deposition source provided in a deposition apparatus, and a second opening located on the opposite side to the surface and smaller than the first opening. Preparing a metal mask substrate for deposition made of metal having a rear surface for forming two openings, forming a second hole having a truncated cone shape having the second opening on the rear surface by wet etching, forming a resin layer on the back surface so as to cover, and wet-etching the metal mask substrate for deposition from the surface to form a first hole having an inverted truncated pyramid shape and the first opening, whereby, Forming a through hole by the second hole portion and the first hole portion, forming an antifouling layer containing a fluorine compound on the surface and an inner wall surface defining the first hole portion, the antifouling layer After forming, chemically removing the resin layer from the metal mask substrate for deposition by exposing the resin layer and the metal mask substrate for deposition to an alkaline solution.

In the manufacturing method of the metal mask for vapor deposition, the resin layer may be made of a photosensitive resin.

In the method for manufacturing the metal mask for deposition, the resin layer may be made of polyimide.

A method of manufacturing a metal mask for deposition to solve the above problems is a surface for forming a first opening facing an deposition source provided in a deposition apparatus, and a second opening located on the opposite side to the surface and smaller than the first opening. An inverted truncated pyramid shape is formed by preparing a metal metal mask substrate for deposition having a rear surface for forming two openings, forming a resin layer on the rear surface, and wet etching the metal mask substrate for deposition from the surface. Forming a through hole with a fluorine compound on the inner wall surface defining the surface and the through hole, thereby forming the first opening on the surface and further forming the second opening on the back surface Forming an antifouling layer containing an antifouling layer, and after forming the antifouling layer, exposing the metal mask substrate for deposition and the resin layer to ultraviolet rays to reduce the adhesion of the resin layer to the metal mask substrate for deposition. and peeling the resin layer with reduced adhesion from the metal mask substrate for deposition.

In the manufacturing method of the metal mask for vapor deposition, the resin layer may be made of an ultraviolet curable pressure sensitive adhesive.

According to the present invention, the deposition material deposited on the metal mask for deposition can be easily removed, and deformation of the metal mask for deposition due to ultrasonic cleaning can be suppressed.

1 is a plan view showing the structure of a mask device in one embodiment.
Fig. 2 is a cross-sectional view showing the structure of a first example of a metal mask for vapor deposition according to the embodiment.
Fig. 3 is a cross-sectional view showing the structure of a second example of a metal mask for vapor deposition in the embodiment.
4 is a cross-sectional view partially showing a bonding structure between an edge of a metal mask for deposition and a mask frame.
5A is a plan view showing the relationship between the number of mask frame holes of a metal mask sheet for deposition and the number of metal masks for deposition.
Fig. 5B is a cross-sectional view showing the structure of the metal mask sheet for vapor deposition shown in Fig. 5A.
6A is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
6B is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
6C is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
Fig. 6D is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
Fig. 6E is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
6F is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
Fig. 6G is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
7A is a process chart showing one step in the first example of the manufacturing method of the metal mask for vapor deposition in the same embodiment.
7B is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
7C is a process chart showing one step in the first example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8A is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8B is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8C is a process chart showing one step in the second example of the manufacturing method of the metal mask for vapor deposition in the same embodiment.
8D is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8E is a process chart showing one step in the second example of the manufacturing method of the metal mask for vapor deposition in the same embodiment.
8F is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
Fig. 8G is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8H is a process chart showing one step in the second example of the manufacturing method of the metal mask for vapor deposition in the same embodiment.
8I is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8J is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.
8K is a process chart showing one step in the second example of the method for manufacturing a metal mask for vapor deposition in the same embodiment.

Hereinafter, with reference to the drawings, a metal mask for deposition and a method for manufacturing the metal mask for deposition will be described. Here, the drawing is typical, and the relationship between the thickness and the plane dimension, the ratio of the thickness of each layer, and the like are different from those in reality. In addition, the embodiments shown below illustrate configurations for embodying the technical idea of the present invention, and the technical idea of the present invention does not specify the material, shape, structure, etc. of component parts to those described below. Various changes can be added to the technical idea of the present disclosure within the technical scope defined by the claims described in the claims.

[Metal mask for deposition]

As FIG. 1 shows, the mask device 10 includes a main frame 20 and a plurality of metal mask sheets 30 for deposition. The main frame 20 has a frame shape supporting a plurality of metal mask sheets 30 for deposition. The main frame 20 is mounted on a deposition apparatus for performing deposition. The main frame 20 defines a main frame hole 21 . In the main frame hole 21, a part of each metal mask sheet 30 for vapor deposition is located.

The metal mask sheet 30 for vapor deposition includes a mask frame 31 and a metal mask 32 for vapor deposition. The mask frame 31 has a strip shape for supporting the metal mask 32 for vapor deposition. The mask frame 31 is attached to the main frame 20 . The mask frame 31 has the same number of mask frame holes 33 as the number of metal masks 32 for deposition. One mask frame hole 33 is a hole penetrating almost the entire area where one metal mask 32 for deposition is located in the mask frame 31 . The mask frame 31 has a rigidity higher than that of the metal mask 32 for deposition and has a frame shape surrounding the mask frame hole 33 . In the mask frame 31, the portion defining the mask frame hole 33 is the inner edge 31E (see Fig. 4). The metal mask 32 for vapor deposition is fixed to the inner side edge 31E by welding, adhesion, or the like.

Referring to FIGS. 2 and 3 , the metal mask 32 for deposition will be described in detail. In addition, below, the thing common to the metal mask 32 for vapor deposition shown in FIG. 2 and the metal mask 32 for vapor deposition shown in FIG. 3 is demonstrated. Next, the particulars specific to each metal mask 32 for deposition are explained.

As FIG. 2 and FIG. 3 show, the metal mask 32 for vapor deposition in the metal mask sheet 30 for vapor deposition is provided with the metal mask base material 32S for vapor deposition, and the antifouling layer 32AF. The metal mask 32 for vapor deposition includes a surface 32a of the metal mask substrate for vapor deposition (hereinafter, the front surface 32a) and a back surface 32b of the metal mask substrate for vapor deposition, which is also a surface opposite to the surface 32a. , the back surface 32b) is provided. At least one of the front surface 32a and the back surface 32b is a target surface for positioning the resist layer. The target surface is a surface on which a resist mask is formed in the process of forming the metal mask 32 for deposition.

The metal mask substrate 32S for vapor deposition may be formed of a single metal sheet or may be formed of a multilayer metal sheet. The metal mask substrate 32S for vapor deposition is made of metal. The material forming the metal mask substrate 32S for deposition may be, for example, an iron-nickel alloy or an iron-nickel-cobalt alloy. The iron-nickel alloy is an alloy containing iron and nickel as main components and, for example, 30% by mass or more of nickel and iron as a residue. Among the iron-nickel alloys, an alloy containing 36% by mass of nickel, that is, invar, is preferable as a material for forming the metal mask 32 for vapor deposition. In Invar, the remainder with respect to 36% by mass of nickel may contain additives other than iron as the main component. Additives are, for example, chromium, manganese, carbon and cobalt. The amount of additives contained in the iron-nickel alloy is 1% by mass or less at most.

In the iron-nickel-cobalt alloy, an alloy containing 32% by mass of nickel and 4% by mass or more and 5% by mass or less of cobalt, that is, superinvar is preferable as a material for forming the metal mask substrate 32S for vapor deposition. do. In the superinbar, the balance of 32% by mass of nickel and 4% by mass or more and 5% by mass or less of cobalt may contain additives other than iron as the main component. Additives are, for example, chromium, manganese and carbon. The amount of additives contained in the iron-nickel-cobalt alloy is 0.5% by mass or less at most.

The coefficient of thermal expansion of the iron-nickel-cobalt alloy is smaller than that of the iron-nickel alloy. The alloy forming the metal mask substrate 32S for deposition is preferably an iron-nickel alloy, and may be an iron-nickel-cobalt alloy.

The surface 32a of the metal mask substrate 32S for vapor deposition satisfies the following [Condition 1].

[Condition 1] The surface roughness Sa satisfies the following expression.

10 nm ≤ Sa ≤ 80 nm

Surface roughness Sa is a value measured by a method based on ISO 25178. When the surface roughness Sa is less than 10 nm, deposits of evaporation materials can be removed by ultrasonic cleaning, while deposits deposited on the metal mask during evaporation are separated from the evaporation source and fall off and spark. The spark causes a problem that the evaporation material cannot be deposited uniformly. That is, when the surface roughness Sa is 10 nm or more, deposits of the evaporation material can be removed by ultrasonic cleaning, and when the surface roughness Sa is 10 nm or more, the deposits deposited on the metal mask 32 for deposition during deposition are removed. It is suppressed that sparking is suppressed when it peels, and then the peeled deposited material falls to an evaporation source.

When the surface roughness Sa exceeds 80 nm, even if the metal surface is fluorinated, the deposit of the deposition material on the metal mask substrate for deposition is removed by ultrasonic treatment due to the physical anchor effect of the deposit of the deposition material and the metal surface. It causes problems that cannot be eliminated. That is, when the surface roughness Sa is 80 nm or less, the anchoring effect of the surface of the metal mask 32 for deposition on deposits of the deposition material is suppressed, and thus the fluorinated metal mask 32 for deposition It is possible to remove deposits on the surface by sonication.

The antifouling layer 32AF contains a fluorine compound. The antifouling layer 32AF has a surface opposite to the surface in contact with the metal mask substrate 32S for vapor deposition. The surface of the antifouling layer 32AF satisfies the following [Condition 2].

[Condition 2] The contact angle with respect to water on the surface of the antifouling layer 32AF is 90° or more.

When the contact angle of the antifouling layer 32AF is 90 DEG or more, the adhesion of the evaporation material to the antifouling layer 32AF is weakened, so that deposits on the antifouling layer 32AF can be removed by ultrasonic treatment.

As the material forming the antifouling layer 32AF, a material containing a fluorine compound, insoluble in a solvent, and having a property of easily removing adhering dregs can be appropriately selected and used. For example, as the antifouling layer 32AF of the present invention, an antifouling material conventionally known in the field of "antireflection film" or "water repellent sheet" can be used.

As a method for manufacturing the metal mask substrate 32S for vapor deposition, any one of (A) electrolysis, (B) rolling and polishing, (C) electrolysis and polishing, and (D) only rolling is used.

When the metal mask substrate 32S for vapor deposition is an invar sheet, the coefficient of thermal expansion of the metal mask substrate 32S for vapor deposition is about 1.2×10 ^-6 /°C. In addition, if the metal mask base material 32S for vapor deposition is a superinvar sheet, the thermal expansion coefficient of the metal mask base material 32S for vapor deposition is about 0.5x10 ^-6 / degreeC. According to the metal mask substrate 32S for vapor deposition having such a thermal expansion coefficient, the degree of thermal expansion in the metal mask 32 for vapor deposition matches the degree of thermal expansion in the glass substrate. Therefore, in vapor deposition using the mask device 10, it is preferable to use a glass substrate as an example of the vapor deposition target.

As described above, the metal mask base material 32S for vapor deposition is equipped with the front surface 32a and the back surface 32b. The surface 32a is a surface for facing the evaporation source in the evaporation apparatus. The back surface 32b is a surface for contacting or approaching an evaporation target such as a glass substrate in the deposition apparatus. In addition, the back surface 32b is an example of a contact surface or a proximity surface, and the surface 32a is an example of a non-contact surface.

The thickness of the metal mask substrate 32S for vapor deposition is 1 μm or more and 100 μm or less, preferably 1 μm or more and 40 μm or less. If the thickness of the metal mask base material 32S for deposition is 40 micrometers or less, it becomes possible to make the depth of the hole formed in the metal mask base material 32S for deposition into 40 micrometers or less. When higher resolution is required for the metal mask 32 for vapor deposition, the thickness of the metal mask substrate 32S for vapor deposition is, for example, 1 μm or more and 15 μm or less. Among them, when the thickness of the metal mask substrate 32S for deposition is 5 μm or less, the metal mask hole 32H for deposition, which is an example of a through hole formed in the metal mask substrate 32S for deposition (hereinafter, the mask hole 32H) )) is possible to make the depth of 5 μm or less. If such a thin metal mask substrate 32S for evaporation is used, when the evaporation target is viewed from the evaporation particles flying toward the metal mask 32 for evaporation, the portion covered by the metal mask 32 for evaporation is reduced, That is, it is possible to suppress the shadow effect.

In addition, when the thickness of the metal mask substrate 32S for vapor deposition is 3 μm or more and 5 μm or less, the metal mask substrate 32S for vapor deposition has a plurality of mask holes 32H spaced apart from each other when viewed from a plane facing the surface 32a. ), and a mask hole 32H capable of responding to manufacturing of a high-resolution display device having a resolution of 700 ppi or more and 1000 ppi or less. In addition, when the thickness of the metal mask substrate 32S for vapor deposition is 10 μm or more and 15 μm or less, the metal mask substrate 32S for vapor deposition has a plurality of mask holes 32H spaced apart from each other when viewed from a plane facing the surface 32a. ), and a mask hole 32H capable of responding to the manufacture of a low-resolution display device having a resolution of 300 ppi or more and 400 ppi or less.

In the example shown in FIG. 2 , the metal mask 32 for vapor deposition has a plurality of mask holes 32H penetrating the metal mask substrate 32S for vapor deposition. The side surface of the hole that partitions the mask hole 32H has an inverted truncated pyramid shape protruding outward of the mask hole 32H in a cross section along the thickness direction of the metal mask substrate 32S for deposition.

The surface 32a includes a surface opening H1 which is an opening of the mask hole 32H. The back surface 32b includes a back surface opening H2 that is an opening of the mask hole 32H. The front opening H1 is an example of the first opening, and the back opening H2 is an example of the second opening. When viewed from a plane facing the front surface 32a, the size of the front opening H1 is larger than that of the back opening H2. Each mask hole 32H is a passage through which vapor deposition particles sublimated from an vapor deposition source pass. The evaporation particles sublimated from the evaporation source advance through the mask hole 32H from the front opening H1 toward the back opening H2. In the mask hole 32H, since the surface opening H1 is larger than the back surface opening H2, it is possible to suppress the shadow effect on deposited particles entering from the surface opening H1.

In the surface 32a, each surface opening H1 is separated from the other surface openings H1. In other words, in the surface 32a, each surface opening H1 is not continuous with the other surface openings H1. Therefore, when viewed from a plane facing the surface 32a, the thickness of the portion located between the surface openings H1 in the metal mask 32 for vapor deposition is such that the mask hole 32H in the metal mask 32 for vapor deposition is It is suppressed to become thinner than the thickness of the part which is not formed. This suppresses a decrease in the mechanical strength of the metal mask 32 for deposition. On the other hand, in the case where one surface opening H1 continues to another surface opening H1 on the surface 32a, the thickness of the portion where the two surface openings H1 connect is the metal mask for vapor deposition. It is thinner than the part in 32 where the mask hole 32H is not formed. As a result, the mechanical strength of the metal mask 32 for deposition is lowered compared to the case where each surface opening H1 is separated from the other surface openings H1.

In addition, if the thickness of the metal mask 32 for vapor deposition is 3 μm or more and less than or equal to 5 μm, the above-described high-resolution display device can be manufactured only by wet etching the metal mask substrate 32S for vapor deposition from the surface 32a. A plurality of possible mask holes 32H can be formed. In addition, if the thickness of the metal mask 32 for vapor deposition is 10 μm or more and 15 μm or less, only by wet etching the metal mask substrate 32S for vapor deposition from the surface 32a, the above-described low resolution display device can be manufactured. A plurality of possible mask holes 32H can be formed. In this way, in any case, it is unnecessary to wet-etch the metal mask substrate 32S for deposition from the back surface 32b.

The metal mask substrate 32S for vapor deposition included in the metal mask 32 for vapor deposition shown in FIG. 2 satisfies the following [Condition 3].

[Condition 3] In the back surface 32b, no halogen-based compound containing a halogen atom is located.

In the metal mask 32 for vapor deposition shown in Fig. 2, the antifouling layer 32AF is located on the front surface 32a and the inner wall surface defining the mask hole 32H, which is a through hole, while not located on the back surface 32b. don't Therefore, no halogen-based compound containing a halogen atom is located on the back surface 32b.

Also, the halogen atom may be at least one of a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. That is, the halogen-based compound may be a compound containing at least one of a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The halogen-based compound may be a fluorine-based compound containing fluorine. The fluorine-based compound may be, for example, a material for forming the antifouling layer 32AF.

In contrast, in order to form the metal mask 32 for deposition used in manufacturing a display device having each resolution using a thicker metal mask substrate 32S for deposition, each of the front surface 32a and the back surface 32b It is necessary to wet-etch the metal mask base material 32S for vapor deposition from this.

In this case, as Fig. 3 shows, the mask hole 32H is equipped with a front surface recessed part 32LH and a back surface recessed part 32SH. The surface concave portion 32LH is an example of the first hole portion, and the back surface concave portion 32SH is an example of the second hole portion. The surface concave portion 32LH is an inverted truncated cone-shaped concave portion formed by wet-etching the metal mask substrate 32S for vapor deposition from the surface 32a. The back surface concave portion 32SH is a frustum shaped concave portion formed by wet etching the metal mask base material 32S for deposition from the back surface 32b. At a position in the vicinity of the backside opening H2 with respect to the central portion of the metal mask 32 for deposition in the thickness direction, the front surface concave portion 32LH is connected to the backside concave portion 32SH. In the mask hole 32H, a portion where the surface concave portion 32LH continues to the back concave portion 32SH is a connection portion. That is, the mask hole 32H includes the front concave portion 32LH, the connecting portion, and the back concave portion 32SH, thereby forming the mask hole 32H as a through hole.

The area of the mask hole 32H along the direction parallel to the surface 32a is the smallest in the connecting portion. In this mask hole 32H, the distance between the back surface opening H2 and the connecting portion is the step height SH. The larger the step height (SH), the larger the shadow effect described above.

Therefore, in the metal mask 32 for vapor deposition shown in FIG. 3 , from the viewpoint of suppressing the shadow effect, the step height SH is preferably 2 μm or less, more preferably 1 μm or less, and 0.5 μm or less. more preferable

In contrast, in the metal mask 32 for vapor deposition shown in Fig. 2 described above, the step height SH is zero. In this case, the mask hole 32H which is a through hole is formed only by the surface recessed part 32LH in the mask hole 32H shown in FIG.

In addition, in FIG. 3, when viewed from the plane facing the surface 32a, the plurality of mask holes 32H are spaced apart from each other, but when wet etching from the surface 32a, adjacent surface recesses 32LH interfere with each other. In other words, there is a case where the adjacent mask holes 32H are not separated from each other by connecting the surface concave portions 32LH adjacent to each other. In that case, the strength of the metal mask 32 for vapor deposition is the metal mask 32 for vapor deposition formed using the metal mask base material 32S for vapor deposition of the same thickness, and the adjacent mask holes 32H are spaced apart from each other. lower than that of the metal mask 32 for deposition.

The metal mask substrate 32S for vapor deposition included in the metal mask 32 for vapor deposition shown in Fig. 3 satisfies the following [Condition 4].

[Condition 4] No halogen-based compound is located on the inner wall surface defining the back surface 32b and the back surface concave portion 32SH.

In the metal mask 32 for vapor deposition shown in FIG. 3, the antifouling layer 32AF is located on the inner wall surface defining the front surface 32a and the surface concave portion 32LH, while the back surface 32b and the back concave portion It is not located on the inner wall surface defining (32SH). Therefore, the halogen-based compound is not located on the inner wall surface defining the back surface 32b and the back surface concave portion 32SH.

[Joint structure of metal mask for deposition]

Referring to FIG. 4 , a cross-sectional structure of a bonding structure between the metal mask 32 for deposition and the mask frame 31 will be described. In addition, in FIG. 4, for convenience of illustration, illustration of the antifouling layer 32AF provided in the metal mask 32 for deposition is omitted.

As FIG. 4 shows, in the metal mask base material for vapor deposition 32S, the part containing the edge in the metal mask base material for vapor deposition 32S is the outer periphery part 32E. In the outer periphery 32E of the metal mask substrate 32S for vapor deposition, a region where the mask hole 32H is not formed continues along the edge of the metal mask substrate 32S for vapor deposition. A portion included in the outer periphery 32E of the surface 32a is bonded to the mask frame 31 .

The mask frame 31 is equipped with the inner edge part 31E, the frame back surface 31b, and the frame surface 31a. The inner edge portion 31E partitions the mask frame hole 33 . The frame back surface 31b faces the metal mask substrate 32S for vapor deposition. The frame surface 31a is a surface opposite to the frame back surface 31b. The inner edge 31E includes a part of the frame back surface 31b and a part of the frame surface 31a. The thickness (T31) of the mask frame 31, that is, the distance between the frame back surface (31b) and the frame surface (31a) is greater than the thickness (T32) of the metal mask substrate 32S for deposition. As a result, the mask frame 31 has higher rigidity than the metal mask substrate 32S for deposition. In particular, the mask frame 31 has high rigidity against sagging of the inner edge 31E due to the weight of the mask frame 31 or displacement of the inner edge 31E toward the metal mask 32 for deposition. have

The material for forming the mask frame 31 is preferably an iron-nickel alloy or an iron-nickel-cobalt alloy. The material for forming the mask frame 31 is more preferably the same as the alloy used as the main component of the metal mask substrate 32S for deposition, among iron-nickel alloys or iron-nickel-cobalt alloys. That is, the material for forming the mask frame 31 is preferably invar or superinvar. The thickness (T31) of the mask frame 31 is twice or more than the thickness (T32) of the metal mask substrate 32S for deposition when the thickness (T32) of the metal mask 32 for deposition is smaller than 20 μm. it is desirable

In a portion of the frame back surface 31b included in the inner edge portion 31E, a junction portion 31BN where the front surface 32a and the frame back surface 31b of the mask frame 31 are joined is located. The joint portion 31BN is positioned continuously or intermittently over almost the entire circumference of the inner edge portion 31E. The bonding portion 31BN may be a welding mark formed by welding of the frame back surface 31b and the front surface 32a. Alternatively, the bonding portion 31BN is a bonding layer for bonding the frame back surface 31b and the front surface 32a, and may be a layer separate from both the mask frame 31 and the metal mask 32 for deposition.

In addition, to the mask frame 31, when the mask frame 31 is joined to the main frame 20, a stress that is pulled toward the outside of the mask frame 31 is applied by the main frame 20. At this time, the mask frame 31 is joined to the main frame 20 so that each end in the direction in which the mask frame 31 extends protrudes outward from the main frame 20. .

[Number of metal masks for deposition]

Referring to Figs. 5A and 5B, the relationship between the number of mask frame holes 33 provided in the metal mask sheet 30 for deposition and the number of metal masks 32 for deposition will be described. 5A and 5B, illustration of the antifouling layer 32AF is omitted for convenience of illustration.

As Fig. 5A shows, the mask frame 31 has a plurality of mask frame holes 33, for example, three mask frame holes 33A, 33B, and 33C. As Fig. 5B shows, the metal mask sheet 30 for vapor deposition is equipped with one metal mask 32 for vapor deposition corresponding to each mask frame hole 33A, 33B, and 33C. More specifically, the inner edge portion 31E that partitions the first mask frame hole 33A is bonded to the first metal mask 32A for vapor deposition. The inner side edge 31E that partitions the second mask frame hole 33B is bonded to the second metal mask 32B for vapor deposition. The inner side edge portion 31E that partitions the third mask frame hole 33C is bonded to the third metal mask for vapor deposition 32C.

Since the metal mask sheet 30 for evaporation is repeatedly used for a plurality of evaporation objects, each of the plurality of mask holes 32H provided in the metal mask sheet 30 for evaporation has a high position, structure, and the like. Precision is required. In this way, when the number of mask frame holes 33A, 33B, and 33C required for one mask frame 31 is covered by three metal masks 32 for deposition, the following advantages are obtained. That is, when the metal mask sheet 30 for evaporation includes one metal mask 32 for evaporation covering all the mask frame holes 33A, 33B and 33C, or only the metal mask 32 for evaporation Compared with the case where the metal mask sheet 30 for deposition is constituted by the above, that is, the case where the mask frame 31 and the metal mask 32 for deposition are integrally formed, the following advantages are obtained. That is, when deformation occurs in a part of one metal mask 32 for deposition, it is possible to reduce the size of the new metal mask 32 for deposition to be replaced with the metal mask 32 for deposition before replacement. In addition, it is also possible to suppress the consumption of various materials required for the manufacture and maintenance of the metal mask sheet 30 for deposition.

In addition, the inspection of the structure of the mask hole 32H is preferably performed in a state where the metal mask 32 for deposition is bonded to the mask frame 31 . Therefore, junction 31BN is. It is preferable to have a configuration in which the deformed metal mask 32 for evaporation can be replaced with a new metal mask 32 for evaporation. Thus, it is possible to use one mask frame 31 for a plurality of metal mask substrates 32S for evaporation and inspect different metal masks 32 for evaporation using one mask frame 31. it is possible to carry out And, the thinner the thickness of the metal mask base material 32S for vapor deposition constituting the metal mask 32 for vapor deposition, and the smaller the size of the mask hole 32H, the lower the yield of the metal mask 32 for vapor deposition. easy. Therefore, a configuration in which one metal mask 32 for vapor deposition is provided for each of the plurality of mask frame holes 33 is preferable for the metal mask sheet 30 for vapor deposition requiring high precision.

Also, in the mask frame 31, a plurality of mask frame holes 33 form a mask hole row. The mask frame 31 is not limited to a configuration having one row of mask holes, and may have a configuration having a plurality of rows of mask holes. In this way, the metal mask sheet 30 for vapor deposition may have a configuration in which a plurality of rows constituted by a plurality of metal masks 32 for vapor deposition are arranged side by side.

[Method of manufacturing metal mask for vapor deposition]

A method of manufacturing the metal mask 32 for deposition will be described with reference to FIGS. 6 to 8 .

In addition, the method for manufacturing the metal mask 32 for vapor deposition described with reference to FIG. 2 and the method for manufacturing the metal mask 32 for vapor deposition described with reference to FIG. 3 are wet to the metal mask substrate 32S for vapor deposition. While the process of etching is different, other processes are almost the same. That is, the metal mask 32 for vapor deposition described with reference to FIG. 2 is manufactured by the one side etching method which processes only from one side of the metal mask base material 32S for vapor deposition, ie, one side. The metal mask 32 for vapor deposition described with reference to FIG. 3 is manufactured by the double-sided etching system which processes the metal mask base material 32S for vapor deposition from both surfaces.

Since the size of the surface opening H1 and the size of the rear surface opening H2 can be controlled, it is preferable to use a double-sided etching method for manufacturing the metal mask 32 for deposition. On the other hand, when the thickness of the metal mask substrate 32S for deposition is 15 μm or less, it is possible to use a single-sided etching method instead of using a double-side etching method because the thickness is small. Hereinafter, the manufacturing method of the metal mask base material 32S for vapor deposition previously demonstrated with reference to FIG. 2 is mainly demonstrated. On the other hand, regarding the manufacturing method of the metal mask 32 for vapor deposition previously demonstrated with reference to FIG. 3, the description overlapping with the manufacturing method of the metal mask 32 for vapor deposition shown in FIG. 2 is abbreviate|omitted. In addition, here, the manufacturing method at the time of using invar as a material which forms the metal mask base material 32S for vapor deposition is shown as an example in the manufacturing method of the metal mask 32 for vapor deposition.

As FIG. 6 shows, in the manufacturing method of the metal mask 32 for vapor deposition, first, the metal mask base material 32S for vapor deposition is prepared by rolling, polishing, etc. mentioned above (refer FIG. 6A). At this time, in order to set the thickness of the metal mask substrate 32S for deposition to a desired thickness, a relatively thick invar sheet is prepared, and then the invar sheet is thinned by etching. In this way, the metal mask substrate 32S for vapor deposition having a desired thickness can be obtained. When the thickness of the metal mask substrate 32S for deposition is 15 μm or less, particularly 10 μm or less, it is difficult to handle the metal mask substrate 32S for deposition. It is bonded to the glass substrate 42 via the phosphorus resin layer 41 . The resin layer 41 is preferably formed of polyimide. When reducing the thickness of the invar sheet, the entire surface of the invar sheet is etched with an etchant.

Next, a resist layer PR is formed on one of the target surfaces of the metal mask substrate 32S for deposition (see FIG. 6B), and then exposure and development are performed on the resist layer PR, thereby forming the target surface A resist mask RM is formed on (see Fig. 6C).

In the method of manufacturing the metal mask 32 for deposition, an etching method is used in which the metal mask substrate 32S for deposition is selectively dissolved by an etchant. As described above, the etching method may be either a single-sided method in which processing is performed from only one side (see Fig. 6) or a double-sided etching method in which processing is performed from both sides (see Fig. 8). Since the size of the front opening H1 and the size of the rear opening H2 can be controlled, it is preferable to use a double-sided etching method, but when the thickness of the metal sheet is 15 μm or less, as described above, a single-side etching method Use In addition, when the thickness of the metal mask base material 32S for deposition is thick enough to use the double-sided etching method, the metal mask sheet 30 for deposition is comprised only by the metal mask 32 for deposition in many cases.

In the metal mask substrate 32S for vapor deposition on which the resist layer PR is formed, patterning of the resist layer PR is performed using a photolithography method. The resist layer PR may be formed of negative photosensitive resin or positive photosensitive resin. In the case of using a negative photosensitive resin, the portion of the resist layer PR in which no opening is formed is exposed to light through a desired pattern mask, while in the case of using a positive photosensitive resin, the opening in the resist layer PR The part forming the is exposed through a desired pattern mask. A normal high-pressure mercury lamp or the like may be used as a light source for exposing the resist layer PR. In addition, the resist layer PR may be a dry film resist covered with a carrier film, or may be a resist layer formed from a coating liquid.

Then, when a dry film resist is used, the dry film resist is developed after peeling the carrier film from the dry film resist. An alkaline aqueous solution is used for the developing solution. The alkaline aqueous solution may be, for example, an aqueous sodium hydroxide solution, an aqueous sodium carbonate solution, an aqueous sodium hydrogencarbonate solution, an amine-based aqueous solution, or a mixed aqueous solution thereof, or an aqueous solution obtained by adding a suitable surfactant or the like to these. After developing the resist layer PR, the resist mask RM obtained by developing the resist layer PR is dried using a hot air dryer, an IR (Infrared Radiation) dryer, or the like.

In order to form a mask hole 32H in the metal mask substrate 32S for vapor deposition positioned on the glass substrate 42 via the resin layer 41, the metal mask substrate 32S for vapor deposition is treated with an acidic etchant. Etching is carried out (see Fig. 6D). Etching of the metal mask substrate 32S for vapor deposition can be performed under known conditions. As the acidic etchant, for example, a ferric perchlorate solution and a mixture of the ferric perchlorate solution and the ferric chloride solution are mixed with any of perchloric acid, hydrochloric acid, sulfuric acid, formic acid, and acetic acid. The etching method may be a dipping type in which the metal mask substrate 32S for deposition is immersed in an acid etchant, or a spray type in which an acidic etchant is sprayed onto the metal mask substrate 32S for deposition. A spin type in which an acidic etchant is dropped onto the mask substrate 32S may be used. Then, the resist mask RM is removed from the surface of the metal mask substrate 32S for deposition (see Fig. 6E).

In the state where the support layer, that is, the resin layer 41 made of polyimide and the glass substrate 42 are attached to the rear surface 32b of the metal mask substrate 32S for vapor deposition, the surface 32a is polished by chemical polishing liquid. Adjust the surface roughness of The chemical polishing liquid for adjusting the surface roughness is an acidic solution containing an oxidizing agent. An acidic solution is generally a combination of an oxidizing agent, an acid, either an inorganic acid or an organic acid, and a stabilizer. That is, the acidic solution contains an oxidizing agent, an acid and a stabilizer.

The composition of the acidic solution is determined according to the type of metal to be subjected to chemical polishing. In the case of an iron-nickel alloy, hydrogen peroxide can be used as an oxidizing agent in addition to the acidic etching solution described above. Specifically, the oxidizing agent may be hydrogen peroxide, the acid may be sulfuric acid or fluoric acid, and the stabilizer may be acetamide, benzamide, phenol, ethanol, ethylene glycol, and the like. In addition to the oxidizing agent, acid, and stabilizer, the acidic solution may also contain a pit inhibitor, other inorganic acids or organic acids, and the acidic solution can be prepared by diluting these materials with water. It is possible to adjust the surface roughness Sa in the surface 32a by changing at least one of the processing temperature and processing time by chemical polishing liquid.

An antifouling layer 32AF is formed on the metal mask substrate 32S for vapor deposition from the surface 32a side of the metal mask substrate 32S for vapor deposition with respect to the metal mask substrate 32S for vapor deposition whose surface roughness Sa is adjusted. (See Figure 6F). As described above, as the material forming the antifouling layer 32AF, a material that is insoluble in a solvent and has a property of easily removing adhering dregs can be appropriately selected and used. For example, as the antifouling layer 32AF of the present invention, an antifouling material conventionally known in the field of "antireflection film" or "water repellent sheet" can be used.

Specific materials include, for example, releasable materials. As the release material, a material that is insoluble in a solvent and capable of forming the antifouling layer 32AF at a temperature that does not deform the metal mask substrate 32S for deposition is used. The releasing material may be a fluorine-based compound, a silicone resin, or the like. From the viewpoints of improving antifouling properties and enhancing adhesion to the metal mask substrate 32S for vapor deposition, the peelable material is preferably a fluorine-based compound. Since the surface free energy of the silicone resin is greater than the surface free energy of the fluorine-based compound, antifouling properties are inferior to the fluorine-based compound. In other words, since the surface free energy of the fluorine-based compound is smaller than that of the silicone resin, antifouling properties are excellent with respect to the silicone resin. In addition, since silicone resin has lower adhesion to the metal that is the metal mask substrate 32S for deposition than fluorine-based compounds when the deposition material is removed by ultrasonic cleaning, the antifouling layer is removed from the metal mask substrate 32S for deposition. It peels off and is easy to fall off. In other words, since the adhesion of the fluorine-based compound to metal is higher than that of the silicone resin, the antifouling layer is less likely to peel off from the metal mask substrate 32S for deposition. The fluorine-based compound is preferably a fluorinated polyether compound.

Specifically as the fluorinated polyether compound, SURECO (registered trademark) AF series 2101S, 2120 (manufactured by AGC), SIFEL (registered trademark) 2000 series (manufactured by Shin-Etsu Chemical Co., Ltd.), Fluorolink (registered trademark) series P56 , P54, F10, S10, A10P, AD1700, MD700 (manufactured by Solvay) and the like.

When the thickness of the antifouling layer 32AF is increased, the apparent thickness of the metal mask substrate 32S for vapor deposition becomes thicker, thereby preventing the occurrence of a shadow depending on the thickness of the antifouling layer 32AF. There may be cases where this is not possible. Accordingly, it is desirable to determine the thickness of the antifouling layer 32AF in consideration of this point. Specifically, the thickness of the antifouling layer 32AF is preferably 100 nm or less. From the viewpoint of enhancing the ease of forming the antifouling layer 32AF, the thickness of the antifouling layer 32AF is preferably 20 nm or less, more preferably 5 nm or more and 10 nm or less.

The back surface 32b of the metal mask base material 32S for vapor deposition is supported by the resin layer 41 which is a support layer. The method of forming the antifouling layer 32AF on the metal mask substrate 32S for deposition is not particularly limited. A coating solution for the antifouling layer 32AF in which a material for forming the antifouling layer 32AF is dissolved or dispersed in an appropriate solvent is coated on the surface 32a of the metal mask substrate 32S for deposition, and then the coating solution is heated. By doing so, the antifouling layer 32AF can be formed. A conventionally known method such as spray coating, spin coating, dip coating, curtain coating, or die coating may be used as a method of applying the coating solution. In addition, in the case of using these coating methods, in the metal mask substrate 32S for vapor deposition, the antifouling layer is also applied to the unetched portion of the surface 32a and the inner wall surface defining the inverted truncated mask hole 32H. (32AF) is formed. By forming the antifouling layer 32AF on the surface 32a and the inner wall surface of the mask hole 32H, even when scum adheres to the flat surface of the surface 32a and the inner wall surface of the mask hole 32H, the adhered The scum can be easily removed by washing. However, it is preferable that the antifouling layer 32AF is not formed on the surface 32a around the joint portion 31BN with the mask frame 31, that is, in a region including a portion forming the joint portion 31BN. Therefore, a masking layer is formed in advance before forming the antifouling layer 32AF so that the antifouling layer 32AF is not formed in the region including the portion where the bonding portion 31BN is formed on the surface 32a.

Deposition having the metal mask substrate 32S for deposition and the antifouling layer 32AF by removing the resin layer 41 and the glass substrate 42 from the metal mask substrate 32S for deposition on which the antifouling layer 32AF is formed. A metal mask 32 can be obtained (see Fig. 6G). In the case where the resin layer 41 and the glass substrate 42 are removed from the thin metal mask substrate 32S for vapor deposition, handling of the metal mask 32 for vapor deposition is difficult because the metal mask 32 for vapor deposition is thin. Therefore, as shown in FIGS. 4 and 5 previously referred to, and as described below with reference to FIG. 7 , after bonding the metal mask 32 for deposition to the mask frame 31, the resin layer ( 41) and the glass substrate 42 are separated from the metal mask 32 for deposition.

As FIGS. 7A to 7C show, the part included in the surface 32a among the outer periphery 32E and the inner edge 31E are joined (refer FIG. 7A). And the glass substrate 42 bonded to the resin layer 41 is peeled from each resin layer 41 (refer FIG. 7B). Next, the resin layer 41 bonded to the metal mask substrate 32S for vapor deposition is peeled from each metal mask 32 for vapor deposition (refer to Fig. 7C). Thereby, the metal mask sheet 30 for vapor deposition mentioned above is obtained. 7, for convenience of illustration, the number of metal masks 32 for vapor deposition bonded to the metal mask sheet 30 for vapor deposition shown in FIG. 5A is the number of metal masks for vapor deposition bonded to the metal mask sheet 30 for vapor deposition ( 32) is less than the number of

In the step of bonding a part of the metal mask 32 for vapor deposition and a part of the mask frame 31, the surface of the metal mask 32 for vapor deposition opposite to the surface in contact with the resin layer 41 is applied to the mask frame 31. It is the process of bonding the faces. As described above, the mask frame 31 is preferably made of an iron-nickel-based alloy or an iron-nickel-based-cobalt alloy, and the thickness of the mask frame 31 is the metal mask 32 for deposition It is preferably at least twice the thickness of In this case, the mechanical strength of the metal mask sheet 30 for vapor deposition can be increased. Furthermore, when vapor deposition using the metal mask sheet 30 for vapor deposition is performed, the metal mask 32 for vapor deposition originates from the difference between the coefficient of thermal expansion of the mask frame 31 and the coefficient of thermal expansion of the metal mask 32 for vapor deposition. bending is suppressed. This suppresses a decrease in accuracy in the shape of a pattern formed using the metal mask sheet 30 for vapor deposition.

As described above, in the metal mask sheet 30 for deposition having the metal mask 32 for deposition, when the thickness of the metal mask 32 for deposition is 3 μm or more and 15 μm or less, the thickness of the mask frame 31 is 15 μm or more and 200 μm or less, and the thickness of the mask frame 31 is preferably twice or more than that of the metal mask 32 for deposition. Further, in the metal mask sheet 30 for deposition having the metal mask 32 for deposition capable of producing a high-resolution display device, when the thickness of the metal mask 32 for deposition is 3 μm or more and 5 μm or less, the mask frame It is preferable that the thickness of 31 is 50 μm or more and 200 μm or less, and that the thickness of the mask frame 31 is 10 times or more of the thickness of the metal mask 32 for deposition. Since the thickness of the metal mask 32 for evaporation is very thin, the thickness of the mask frame 31 is 10 times or more of the thickness of the metal mask substrate 32S for evaporation, so that the entire metal mask sheet 30 for evaporation A decrease in mechanical strength can be suppressed.

As the method shown in FIG. 7A , laser welding can be used for the method of joining the outer periphery 32E to the inner edge 31E. Through the glass substrate 42 and the resin layer 41, the first laser beam L1 is irradiated to a portion of the metal mask 32 for deposition where the bonding portion 31BN is located. The wavelength of the first laser beam L1 may be, for example, 355 nm, 1064 nm, or 1070 nm. Therefore, the glass substrate 42 and the resin layer 41 have transparency with respect to the 1st laser beam L1. In other words, the first laser beam L1 has a wavelength capable of transmitting through the glass substrate 42 and the resin layer 41 . And intermittent bonding part 31BN is formed by irradiating the 1st laser beam L1 intermittently along the edge of the mask frame hole 33. On the other hand, by continuously irradiating the first laser beam L1 along the edge of the mask frame hole 33, a continuous junction 31BN is formed. Moreover, the glass substrate 42 may have a through hole through which the 1st laser beam L1 passes in the site|part to which the 1st laser beam L1 is irradiated. In this case, it is possible to make the power of the 1st laser beam L1 small compared with the case where the glass substrate 42 does not have a through hole.

Thereby, the outer periphery 32E of the metal mask 32 for vapor deposition and the inner periphery 31E of the mask frame 31 are welded. Further, in a state in which stress toward the outside of the metal mask 32 for deposition is applied to the metal mask 32 for deposition, the resin layer 41 made of polyimide and the glass substrate 42 form the metal mask 32 for deposition. ), it is also possible to omit the application of stress to the metal mask 32 for deposition in the welding of the metal mask 32 for deposition and the mask frame 31 .

As FIG. 7B and FIG. 7C show, the manufacturing method of the metal mask sheet 30 for vapor deposition includes a peeling process. A peeling process is a process of peeling the resin layer 41 and the glass substrate 42 from the metal mask 32 for vapor deposition. The metal mask 32 for vapor deposition including the plurality of mask holes 32H is supported by the resin layer 41 and the glass substrate 42 in the process of manufacturing the metal mask sheet 30 for vapor deposition. In the metal mask sheet 30 for vapor deposition, it is supported by the mask frame 31. Therefore, compared to the case where the metal mask sheet 30 for vapor deposition is comprised only of the metal mask 32 for vapor deposition, the thickness of the metal mask base material 32S for vapor deposition can be made thin. Therefore, by shortening the distance between one surface opening H1 and the other rear surface opening H2 in the mask hole 32H, the structural image of the pattern formed using the metal mask sheet 30 for vapor deposition is reduced. Accuracy is improved, and handling of the metal mask sheet 30 for deposition can be improved by the rigidity of the mask frame 31 .

The peeling step includes a first peeling step (see Fig. 7B) and a second peeling step (see Fig. 7C). In the first peeling step, the second laser beam (L2) having a wavelength transmitted through the glass substrate 42 and absorbed by the resin layer 41 is applied to the interface between the resin layer 41 and the glass substrate 42. ), the glass substrate 42 is peeled from the resin layer 41. The wavelength of the second laser beam L2 is preferably 308 nm or more and 355 nm or less.

In the 1st peeling process, the resin layer 41 absorbs the thermal energy by the 2nd laser beam L2 by irradiating the 2nd laser beam L2 to the interface of the resin layer 41 and the glass substrate 42. . Thereby, when the resin layer 41 is heated, the strength of the chemical bond between the resin layer 41 and the glass substrate 42 is lowered. And the glass substrate 42 is peeled from the resin layer 41. In the 1st peeling process, although it is preferable to irradiate the 2nd laser beam L2 to the whole junction part 31BN, in between the glass substrate 42 and the resin layer 41 in the whole junction part 31BN If it is possible to lower the bonding strength, the second laser beam L2 may be irradiated to a part of the junction 31BN.

At the wavelength of the second laser beam L2, it is preferable that the transmittance of the glass substrate 42 is higher than that of the resin layer 41. Thereby, compared with the case where the transmittance of the resin layer 41 is higher than the transmittance of the glass substrate 42, in the resin layer 41, the portion forming the interface between the glass substrate 42 and the resin layer 41 is heated. efficiency can be increased.

When the wavelength of the second laser beam L2 is, for example, 308 nm or more and 355 nm or less, in this wavelength, the transmittance of the glass substrate 42 is 54% or more and the transmittance of the resin layer 41 is 1 It is preferable that it is % or less. Thus, more than half of the light quantity of the second laser beam L2 irradiated to the glass substrate 42 passes through the glass substrate 42, and furthermore, the second laser beam L2 transmitted through the glass substrate 42 ) is absorbed by the resin layer 41. Therefore, the efficiency of heating the part which forms the interface of the glass substrate 42 and the resin layer 41 in the resin layer 41 can be raised more.

As described above, the resin layer 41 is preferably formed of colored polyimide among polyimides. Moreover, it is preferable that the glass substrate 42 is transparent. As the material for forming the glass substrate 42, quartz glass, non-alkali glass, soda lime glass, crystallized glass, borosilicate glass, high silica glass and porous glass can be used.

In the second peeling step, after the first peeling step, the resin layer 41, the metal mask 32 for vapor deposition, and the mask frame 31 are exposed to the chemical liquid LM, thereby using the chemical liquid LM. By dissolving the resin layer 41, the resin layer 41 is peeled from the metal mask base material 32S for vapor deposition. In this way, the resin layer 41 is chemically removed from the metal mask substrate 32S for deposition. As the chemical liquid LM, a liquid capable of dissolving the material for forming the resin layer 41 and not reactive to the material for forming the metal mask 32 for deposition can be used. An alkaline solution can be used for the chemical liquid LM, for example. A sodium hydroxide aqueous solution is mentioned as an alkaline solution. In Fig. 7C, a dipping method is exemplified as a method of contacting the resin layer 41 and the chemical liquid LM, but a spray method and a spin method are used as a method of bringing the resin layer 41 into contact with the chemical liquid LM. It is also possible to use

Thus, in the process of peeling the resin layer 41 and the glass substrate 42 from the metal mask base material 32S for vapor deposition, the glass substrate 42 is peeled from the resin layer 41 by the 1st peeling process, Moreover, the resin layer 41 is peeled from the metal mask base material 32S for vapor deposition by the 2nd peeling process. Therefore, due to interface destruction by an external force applied to the laminate of the glass substrate 42, the resin layer 41, and the metal mask 32 for vapor deposition, the glass substrate 42 and the glass substrate 42 are separated from the metal mask substrate 32S for vapor deposition. Compared to the case where the paper layer 41 is peeled off, the external force acting on the metal mask 32 for deposition can be reduced. This prevents the metal mask 32 for evaporation from being deformed due to the separation of the resin layer 41 and the glass substrate 42, and consequently the mask hole 32H of the metal mask 32 for evaporation to be deformed. are suppressed

In addition, the material which forms the resin layer 41 is not limited to polyimide, For example, an ultraviolet (UV) curable adhesive may be sufficient. In this case, when peeling the resin layer 41 and the glass substrate 42 from the metal mask base material 32S for vapor deposition, the resin layer 41 is hardened by exposing the resin layer 41 to UV, and this In this way, the adhesiveness of the resin layer 41 to the metal mask base material 32S for vapor deposition can be reduced. Next, by peeling the resin layer 41 from the metal mask base material 32S for vapor deposition, it is also possible to simultaneously remove the resin layer 41 and the glass substrate 42 from the metal mask base material 32S for vapor deposition.

In addition, for formation of the resin layer 41 by an adhesive, a UV curable adhesive film for easy peeling is used, for example. By attaching one surface of the UV curable easily peelable adhesive film to the metal mask substrate 32S for vapor deposition, and further attaching the other surface of the UV curable easily peelable adhesive film to the glass substrate 42, glass A resin layer 41 positioned between the substrate 42 and the metal mask substrate 32S for deposition can be formed.

On the other hand, when the thickness of the metal mask base material 32S for deposition is thicker than 15 μm, particularly when the thickness is greater than 20 μm, the double-sided etching method shown in FIG. 8 is used as a method for manufacturing the metal mask 32 for deposition. do. In the double-sided etching method, each etching amount is changed to adjust the size of the rear surface opening H2 of the metal mask substrate 32S for deposition and the surface opening H1 of the metal mask substrate 32S for deposition, That is, it is necessary to form the back surface opening H2 and the front surface opening H1 by separate etching steps.

After the front surface 32a and the back surface 32b of the metal mask substrate 32S for vapor deposition are subjected to acid treatment using hydrochloric acid, sulfuric acid or the like, a resist layer PR for pattern formation is formed (see Fig. 8A). In detail, a resist layer (PRa) is formed on the front surface (32a), and a resist layer (PRb) is formed on the back surface (32b). The resist material may be a negative photosensitive resin in which the UV exposed portion is cured, or a positive photosensitive resin in which the UV exposed portion is dissolved in a developing solution. In addition, the method of forming the resist layer PR may be a method of laminating a dry film resist to the metal mask substrate 32S for vapor deposition while applying heat to the dry film resist. Alternatively, the method for forming the resist layer PR may be a method in which a liquid resist material is coated on a metal plate by gravure coating or screen coating to form a coated film, and then the solvent is removed from the coated film by a hot air dryer or the like. do.

In the metal mask substrate 32S for deposition on which the resist layers PRa and PRb are formed, patterning of the resist layers PRa and PRb is performed using a photolithography method (see Fig. 8B). The resist layers PRa and PRb may be formed of negative photosensitive resin or positive photosensitive resin. In the case of using a negative photosensitive resin, portions of the resist layers PRa and PRb without openings are exposed through a mask with a desired pattern. On the other hand, in the case of using a positive photosensitive resin, portions forming openings in the resist layers PRa and PRb are exposed. A normal high-pressure mercury lamp may be used as a light source for exposing the resist layers PRa and PRb.

Then, when a dry film resist is used, after peeling the carrier film from the dry film resist, the dry film resist is developed, thereby forming resist masks (RMa, RMb). An alkaline aqueous solution is used for the developing solution. The alkaline aqueous solution may be, for example, an aqueous sodium hydroxide solution, an aqueous sodium carbonate solution, an aqueous sodium hydrogencarbonate solution, an amine-based aqueous solution, or a mixed aqueous solution thereof, or an aqueous solution obtained by adding a suitable surfactant or the like to these. After developing the resist layers PRa and PRb, the resist layers PRa and PRb are dried using a hot air dryer, an infrared radiation (IR) dryer, or the like.

When either one of the back surface 32b and the front surface 32a is etched, a resin layer 43a serving as a protective layer is formed so that the other surface is not etched (see Fig. 8C). For formation of the resin layer 43a, an adhesive film, a liquid photosensitive resin, or polyimide is used. In the case of the double-sided etching method, generally, the metal mask substrate 32S for deposition is etched from the back surface 32b in order to form the rear surface opening H2 having a relatively small diameter. That is, the back surface opening H2 is formed in the metal mask substrate 32S for deposition prior to the surface opening H1 of the metal mask substrate 32S for deposition. In this case, it is preferable that the resin layer 43a which is the protective layer of the surface 32a is an adhesive film. Thereby, it is possible to form the resin layer 43a on the resist mask RMa and to peel the resin layer 43a from the resist mask RMa, and furthermore, the resin layer 43a is a metal for deposition. When conveying the mask base material 32S, it is possible to also play a role as a support body.

After forming the resin layer 43a on the front surface 32a, in order to form the rear surface opening H2 of the back surface 32b in the metal mask base material 32S for vapor deposition, etching by an acidic etchant is performed (FIG. 8D reference). Etching conditions are the same as those described above in the single-sided etching method.

In order to form the resin layer 43b serving as the protective layer of the back surface 32b, the resist mask RMb is removed from the metal mask base material 32S for deposition in which the back surface opening H2 is formed (see Fig. 8E). Peeling may be performed under known conditions. An alkali stripping solution is used for stripping the resist mask RMb, for example. The alkaline stripping solution may be, for example, an aqueous sodium hydroxide solution, an aqueous sodium carbonate solution, an aqueous sodium hydrogencarbonate solution, an amine-based aqueous solution, or a mixed aqueous solution thereof, or an aqueous solution to which an appropriate surfactant or the like is added.

In order to prevent the back surface 32b from being etched when the front surface 32a is etched, a resin layer 43b serving as a protective layer for the back surface 32b is formed by a coating method or a printing method (see Fig. 8F). A photosensitive resin, which is a liquid varnish, is used to form the resin layer 43b. It is preferable that the thickness of the resin layer 43b is 5 μm or more and 20 μm or less. At this time, the varnish is filled into the back concave portion 32SH formed in the metal mask substrate 32S for deposition, and thereby the resin layer 43b is formed so that the back concave portion 32SH is filled with the varnish. In addition, the resin layer 43b may be formed of polyimide. When the resin layer 43b is formed of polyimide, the resin layer 43b is formed by applying a polyimide solution, a polyamic acid solution, or the like to a film using a coating method or a printing method, and then curing the film by heat treatment or the like. It is preferable to form by doing.

In order to form the front opening H1 and thereby connect the front opening H1 to the rear opening H2, the resin layer 43a is peeled off, and then the front surface 32a is etched (FIG. 8G, see Figure 8H). Etching of the front surface 32a can be performed using the same etchant as the etching of the back surface 32b.

After peeling the resist mask RMa from the metal mask base material 32S for vapor deposition in which the front opening H1 and the back opening H2 were formed, the antifouling layer 32AF was applied under the conditions described above in a single-sided etching method. form (see FIGS. 8I and 8J). When forming the antifouling layer 32AF on the metal mask base material for vapor deposition 32S, the resin layer 43b is formed on the back surface of the metal mask base material for vapor deposition 32S, and the back surface concave portion 32SH is formed in the resin layer ( It is filled by 43b). Therefore, when the antifouling layer 32AF is formed so as to cover the surface 32a of the metal mask substrate 32S for vapor deposition, the surface 32a of the metal mask substrate 32S for vapor deposition and the surface concave portion 32LH An antifouling layer 32AF is formed so as to cover the inner wall surface. On the other hand, the antifouling layer 32AF is not formed on the back surface 32b of the metal mask base material 32S for vapor deposition and the inner wall surface of the back surface concave portion 32SH. Therefore, no halogen-based compound is located on the inner wall surface of the back surface 32b and the back surface concave portion 32SH.

According to the metal mask 32 for vapor deposition obtained by the double-side etching method, by peeling the resin layer 43b from the back surface 32b of the metal mask base material 32S for vapor deposition, deposition only by the metal mask 32 for vapor deposition. A metal mask sheet 30 may be configured (see FIG. 8K). In addition, when peeling the resin layer 43b formed of photosensitive resin or polyimide from the metal mask base material 32S for vapor deposition, an alkaline solution can be used. In this way, the resin layer 43b is chemically removed from the metal mask substrate 32S for deposition. A sodium hydroxide aqueous solution is mentioned as an alkaline solution.

Alternatively, similar to the operation in the single-side etching method, after bonding the metal mask 32 for vapor deposition to the mask frame 31, the resin layer 43b is peeled off from the back surface 32b, thereby forming the metal mask sheet 30 for vapor deposition. may be configured.

In addition, when the metal mask sheet 30 for vapor deposition includes the mask frame 31, among the mask frame 31, the frame surface 31a of the mask frame 31 facing the deposition source and the mask frame hole ( 33), an antifouling layer may be formed on the side surface. Further, even when the mask frame 31 includes an antifouling layer, it is preferable that the antifouling layer is not located on the frame back surface 31b of the mask frame 31 . That is, it is preferable that no halogen-based compound is located on the frame back surface 31b of the mask frame 31 .

In the method of manufacturing a display device using the metal mask sheet 30 for vapor deposition described above, first, the mask device 10 equipped with the metal mask sheet 30 for vapor deposition is installed in a vacuum chamber of the vapor deposition device. At this time, the mask device 10 is placed in a vacuum chamber so that the evaporation object such as a glass substrate and the back surface 32b of the metal mask substrate 32S for evaporation face each other, and the evaporation source and the antifouling layer 32AF face each other. Mount it. Then, the evaporation target is brought into the vacuum chamber, and the evaporation material is sublimated by the evaporation source. Thus, in the metal mask for deposition 32 formed only by etching the metal mask base material 32S for deposition from one side, the pattern having a shape following the back surface opening H2 is deposited facing the back surface opening H2. formed on the target. In contrast, in the metal mask 32 for deposition formed by etching from both the front surface 32a and the back surface 32b of the metal mask substrate 32S for deposition, the surface concave portion 32LH is formed in the back surface concave portion 32SH. A pattern having a shape following the continuous portion is formed on the deposition target facing the rear surface opening H2. Further, the evaporation material may be, for example, an organic light emitting material constituting a pixel of a display device, a material for forming a pixel electrode constituting a pixel circuit of a display device, or the like.

[Example]

Hereinafter, with reference to Table 1, Examples and Comparative Examples will be described.

[Example 1]

A metal sheet made of rolled invar and having a square shape of 110 mm x 110 mm in width and length, that is, with a side length of 110 mm, and having a thickness of 100 μm was prepared. A glass substrate 42 was bonded to the back side of the metal sheet by chemical bonding with a polyimide film (Kapton EN, manufactured by DuPont, 5 μm thick) interposed therebetween, thereby forming a support layer on the back side of the metal sheet. A polyimide film is an example of the resin layer 41 which is a support layer.

Next, after degreasing the surface of the metal sheet using a 30% aqueous sodium hydroxide solution as a degreasing solution, the surface of the metal sheet was subjected to acid treatment using 10% hydrochloric acid. An aqueous solution obtained by adding 4.21 mass% of acidic ammonium fluoride to 26 mass% aqueous hydrogen peroxide was prepared as a chemical polishing liquid stock solution. A chemical polishing liquid was prepared by diluting the chemical polishing liquid stock solution twice with pure water. The surface of the metal sheet was immersed in a chemical polishing solution heated at 50°C for 15 minutes, thereby adjusting the thickness of the metal sheet to 10.2 µm and adjusting the surface roughness Sa on the surface of the metal sheet to 10.1 nm. . This obtained the metal mask base material 32S for vapor deposition.

A negative dry film resist was laminated on the surface 32a of the metal mask substrate 32S for vapor deposition to form a resist layer PR. In the metal mask substrate 32S for vapor deposition, the pattern portion for forming the mask hole 32H was set as a region having a size of 99 mm x 99 mm in the center of the metal mask substrate 32S for vapor deposition. That is, a pattern portion having a square shape with a side length of 99 mm was set on the metal mask substrate 32S for vapor deposition such that the center of the metal mask substrate 32S for vapor deposition coincided with the center of the pattern portion. In addition, a region having a square shape of 100 mm × 100 mm, that is, a side length of 100 mm, including the peripheral portion, was set on the metal mask substrate 32S for deposition. The peripheral portion had a rectangular frame shape surrounding the pattern portion, and the width of the peripheral portion was set to 1 mm.

Hole 50 μm/Rib 50 μm, that is, after exposing the resist layer (PR) using an exposure mask in which light-blocking parts having a circular shape with a diameter of 50 μm are arranged in a grid pattern at a pitch of 100 μm, a 1% sodium carbonate aqueous solution was applied. was used to develop the resist layer (PR). After the metal mask base material 32S for vapor deposition provided with the resist layer PR was washed with water, the metal mask base material 32S for vapor deposition was heat-dried at 100 degreeC. The metal mask substrate 32S for deposition having the patterned resist layer PR, that is, the resist mask RM, thus prepared was etched by a spray method using a 48% aqueous ferric chloride solution as an etchant. Thus, the front opening H1 and the back opening H2 were formed in the metal mask substrate 32S for deposition. Furthermore, the resist mask RM was peeled from the metal mask substrate 32S for vapor deposition with a 10% sodium hydroxide aqueous solution as a resist stripper. Then, after washing the metal mask substrate 32S for vapor deposition with water, the metal mask substrate 32S for vapor deposition was dried.

After forming a coating film by applying a 0.1% diluted SUREC02120 (manufactured by AGC) aqueous solution to the metal mask substrate 32S for vapor deposition using a two-fluid spray device, the metal mask substrate 32S for vapor deposition provided with the coating film was heated at 120°C for 10 minutes. Thus, the antifouling layer 32AF was formed on the surface 32a of the metal mask substrate 32S for vapor deposition and on the inner wall surface of the mask hole 32H.

Next, a mask frame 31 made of a rolled invar material was prepared. The mask frame 31 had a length of 400 mm in the longitudinal direction and a length of 50 mm in the width direction, and had three mask frame holes 33 . Using an infrared laser having a wavelength of 1064 nm, a metal mask substrate 32S for deposition is placed on the mask frame 31 so that one mask frame hole 33 is covered by one metal mask substrate 32S for deposition. joined. Then, after the glass substrate 42 is lifted off using an ultraviolet laser having a wavelength of 308 nm, that is, after the glass substrate 42 is separated from the resin layer 41, the resin layer 41 is treated with an alkaline solution. It was separated from the metal mask base material 32S for deposition. Thus, the metal mask sheet 30 for vapor deposition of Example 1 was obtained.

A laser microscope OLS-4000 (manufactured by Olympus Corporation) was used for dimension measurement, ie, measurement of surface roughness Sa. For elemental analysis, a scanning electron microscope S-4800 (manufactured by Hitachi High-Technologies Corporation) was used and the elements of the front surface 32a and rear surface 32b of the metal mask 32 for deposition were measured by measuring in the SEM-EDX mode. analysis was performed. At this time, presence or absence of fluorination treatment on each surface 32a, 32b and contamination such as adhesion of a halogen-based compound were judged by the presence or absence of a peak of a halogen atom. The thickness of the metal mask 32 for vapor deposition was measured with micrometer K352C (manufactured by Anritz Corporation). Further, the contact angles on the front and rear surfaces of the metal mask 32 for vapor deposition were measured by dropping pure water on each surface, and subsequently using a CA-X type contact angle meter (manufactured by Kyowa Interface Science).

Washing resistance was evaluated by the following method. That is, the deposition metal mask ( 32) was cleaned using an ultrasonic cleaning device (W-118 ultrasonic cleaner, manufactured by Honda Electronics Co., Ltd.). At this time, 28 kHz/5 seconds, 45 kHz/5 seconds, and 100 kHz/5 seconds were regarded as one cycle, and the metal mask 32 for deposition was subjected to cleaning treatment over 1 minute. The metal mask 32 for deposition was cleaned by setting the maximum output of the ultrasonic cleaning device to 600 W and appropriately adjusting the output by lowering the output, that is, by setting the output to 600 W or less.

The evaluation criteria were mask strength and organic matter removal. The mask strength was judged based on whether or not wrinkles were generated in the metal mask 32 for deposition before and after cleaning. A case where wrinkles did not occur after washing was set as “○”, and a case where wrinkles occurred was set as “×”. Regarding organic matter removal, the presence or absence of organic matter, that is, deposits of the evaporation material, was judged by observation of appearance under a microscope. The case where there was no organic matter was set as "○", and the case where organic matter remained was set as "x". The evaluation results are shown in Table 1 below.

[Examples 2 to 7]

As Table 1 shows, in the metal sheet of Example 1, the thickness of the metal sheet was changed, and the surface roughness Sa was adjusted by the concentration of the chemical polishing liquid and the treatment temperature, that is, the temperature of the chemical polishing liquid. Other than that, the metal mask sheet 30 for vapor deposition of Examples 2-7 was obtained by performing the same operation as Example 1. As in Example 1, the results of evaluating the metal mask sheet 30 for vapor deposition are shown in Table 1.

[Example 8]

A metal sheet made of rolled invar and having a square shape of 110 mm x 110 mm in width and length, that is, with a side length of 110 mm, and having a thickness of 100 μm was prepared. After degreasing the surface of the metal sheet using a 30% aqueous sodium hydroxide solution as a degreasing solution, the surface of the metal sheet was subjected to acid treatment using 10% hydrochloric acid. At this time, the same chemical polishing liquid as in Example 1 was prepared, and the surface of the metal sheet was subjected to acid treatment under the same conditions as in Example 1. Thus, the thickness of the metal sheet was adjusted to 99.6 mm, and the surface roughness Sa on the surface of the metal sheet was adjusted to 10.5 nm. This obtained the metal mask base material 32S for vapor deposition.

A negative dry film resist was laminated on both surfaces of the metal mask base material 32S for vapor deposition to form a resist layer PR. On the back surface 32b of the metal mask substrate 32S for deposition, the back surface pattern portion forming the back surface opening H2 among the mask holes 32H has a size of 99 mm x 99 mm at the center of the back surface 32b. It was set as a region with That is, a back surface pattern portion having a square shape with a side length of 99 mm was set on the metal mask substrate 32S for deposition so that the center of the back surface 32b coincided with the center of the back surface pattern portion. The resist layer (PRb) was exposed using an exposure mask in which light-blocking portions having holes: 30 μm/rib: 70 μm, that is, circular shapes with a diameter of 30 μm, were arranged in a grid pattern at a pitch of 100 μm.

In addition, in the metal mask substrate 32S for vapor deposition, the surface pattern portion forming the surface opening H1 among the mask holes 32H is set as a region having a size of 99 mm x 99 mm in the center of the surface 32a. set up That is, a surface pattern portion having a square shape with a side length of 99 mm was set on the metal mask substrate 32S for deposition so that the center of the surface 32a coincided with the center of the surface pattern portion. Then, the resist layer PRa was exposed to light using an exposure mask in which light-shielding portions having a circular shape with Hole: 50 μm/Rib: 50 μm, that is, a diameter of 50 μm, were arranged in a grid pattern at a pitch of 100 μm. In addition, in the exposure mask for exposing the resist layer PRb located on the back surface 32b, the center of each opening is the opening formed in the exposure mask for exposing the resist layer PRa located on the front surface 32a. The positions of the two exposure masks were aligned so as to face the center. Thereafter, the resist layers (PRa, PRb) were developed with a 1% sodium carbonate aqueous solution, thereby forming resist masks (RMb, RMa).

After the metal mask substrate 32S for vapor deposition provided with the resist masks RMa and RMb was washed with water, the metal mask substrate 32S for vapor deposition was heat-dried at 100°C. Next, a resin layer 43a made of an adhesive film serving as a protective layer was formed on the resist mask RMa located on the surface 32a of the metal mask substrate 32S for vapor deposition. The metal mask substrate 32S for vapor deposition having the resist mask RMb positioned on the back surface 32b was etched by a spray method using a 48% aqueous ferric chloride solution as an etchant. Thus, the back surface opening H2 and the back surface concave portion 32SH were formed in the metal mask substrate 32S for vapor deposition.

Furthermore, the resist mask RM was peeled from the metal mask substrate 32S for vapor deposition with a 10% sodium hydroxide aqueous solution as a resist stripper. Then, after washing the metal mask substrate 32S for vapor deposition with water, the metal mask substrate 32S for vapor deposition was dried.

A resin layer serving as a protective layer is obtained by applying a protective varnish made of a photosensitive resin by a bar coater to the back surface 32b of the metal mask substrate 32S for evaporation that has been etched, and then drying and curing the protective varnish. (43b) was formed. Then, the resin layer 43a located on the front surface 32a of the metal mask substrate 32S for vapor deposition is peeled off, and then the metal mask substrate 32S for vapor deposition is formed using the same etchant used for etching the back surface 32b. The surface 32a of was etched. In this way, the surface opening H1 and the surface recess 32LH were formed in the metal mask substrate 32S for vapor deposition.

Furthermore, the resist mask RM was peeled from the metal mask substrate 32S for vapor deposition with a 10% sodium hydroxide aqueous solution as a resist stripper. Then, after washing the metal mask substrate 32S for vapor deposition with water, the metal mask substrate 32S for vapor deposition was dried. In the state where the resin layer 43b was formed on the rear surface 32b of the metal mask substrate 32S for vapor deposition, the same operation as in Example 1 was carried out to obtain the front surface 32a and the surface concavity of the metal mask substrate 32S for vapor deposition. An antifouling layer 32AF was formed on the inner wall surface defining the portion 32LH. Then, the resin layer 43b was peeled off from the metal mask base material 32S for vapor deposition, and thereby the metal mask sheet 30 for vapor deposition of Example 8 was obtained.

[Comparative Example 1]

In Example 6, the metal mask sheet 30 for vapor deposition of Comparative Example 1 was obtained by carrying out the same operation as Example 6 except not forming the antifouling layer 32AF. Since the antifouling layer 32AF was not formed on the metal mask sheet 30 for vapor deposition of Comparative Example 1, even if the metal mask sheet 30 for vapor deposition was ultrasonically cleaned, deposits of deposition materials could not be removed. . In addition, when the output of the ultrasonic cleaning was raised and deposits of the deposition material were removed, wrinkles were generated in the metal mask sheet 30 for deposition.

[Comparative Example 2]

In Example 1, a metal mask sheet 30 for vapor deposition of Comparative Example 2 was obtained by performing the same operation as in Example 1 except that chemical polishing was not performed and the antifouling layer 32AF was not formed. . In the metal mask sheet 30 for vapor deposition of Comparative Example 2, it was confirmed that the surface roughness Sa was 79.8 nm. Further, since the antifouling layer 32AF was not formed on the metal mask sheet 30 for vapor deposition, the deposit of the vapor deposition material could not be removed even by ultrasonic cleaning. In addition, unless the output of the ultrasonic cleaning was raised to 600 W, deposits of the evaporation material could not be removed, and wrinkles were generated in the metal mask sheet 30 for evaporation.

[Comparative Example 3]

In Example 1, the metal mask sheet 30 for vapor deposition of Comparative Example 3 was obtained by performing the same operation as in Example 1 except for changing the conditions for chemical polishing. In the metal mask sheet 30 for vapor deposition of Comparative Example 3, it was confirmed that the surface roughness Sa was 5.5 nm, that is, less than 10 nm. Therefore, the deposit of the evaporation material could be easily removed. However, sparks were generated when the deposited material deposited on the metal mask sheet 30 for deposition was separated from the metal mask sheet 30 for deposition during deposition, and the separated deposited material fell to the deposition source. As a result, the film surface after deposition, that is, the film formed on the substrate by the deposition was non-uniform.

[Comparative Example 4]

In Example 1, the metal mask sheet 30 for vapor deposition of Comparative Example 4 was obtained by carrying out the same operation as in Example 1 except that chemical polishing was not performed. In the metal mask sheet 30 for vapor deposition of Comparative Example 4, it was confirmed that the surface roughness Sa was 98.6 nm, that is, more than 80 nm. Therefore, even if ultrasonic cleaning was performed, the deposit of the evaporation material could not be removed. In addition, unless the output of the ultrasonic cleaning was raised to 600 W, deposits of the evaporation material could not be removed, and as a result, wrinkles were generated in the metal mask sheet 30 for evaporation.

[Comparative Example 5]

In Example 8, before applying the antifouling layer 32AF, the resin layer 43b on the back surface 32b is peeled off, and then the antifouling layer 32AF is applied to the metal mask base material 32S for vapor deposition. , a metal mask sheet 30 for vapor deposition of Comparative Example 5 was obtained. Thereby, the metal mask 32 for vapor deposition which has the antifouling layer 32AF on both the front surface 32a and the back surface 32b of the metal mask base material 32S for vapor deposition was obtained. As a result of elemental analysis of the rear surface 32b of the metal mask 32 for deposition, it was confirmed that the rear surface 32b was contaminated by adhesion of a fluorine compound, which is a halogen compound. If the halogen-based compound is located on the back surface 32b of the metal mask 32 for deposition, the deposition target such as a glass substrate is contaminated, and the halogen-based compound causes a decrease in the light efficiency and lifetime of the light emitting element. It cannot be used as the metal mask 32 for deposition.

In addition, the material forming the antifouling layer 32AF may be changed to a silicone resin or a hybrid material in which a fluorine-based compound is blended with a silicone resin in the case of having antifouling properties and adhesiveness required for the antifouling layer 32AF. The silicone resin may be, for example, KR-400 (manufactured by Shin-Etsu Chemical Co., Ltd.), Modifer FS700 (manufactured by Nichiyu Corporation), Full Shade (manufactured by Toyochem Corporation), and the like. The hybrid material may be, for example, KR-400F (manufactured by Shin-Etsu Chemical Co., Ltd.) or the like.

10 … mask device
20 … main frame
21 … main frame hole
30 … Metal mask sheet for deposition
31 … mask frame
31E... medial edge
31BN … copula
31a... frame surface
31b... behind the frame
32 … Metal mask for deposition
32E... outer periphery
32a... surface
32b... the other side
32H... mask hole
32S... Metal mask substrate for deposition
33 … mask frame hole
41, 43a, 43b... resin layer
42 … glass substrate
H1 … surface opening
H2... back side opening
PR … resist layer
RM … resist mask

Claims (11)

A surface having a first opening facing the deposition source provided in the deposition apparatus;
a back surface having a second opening smaller than the first opening as a surface opposite to the front surface;
A metal mask for deposition having a metal mask substrate for deposition having a through hole having an inverted truncated pyramid shape as a through hole passing through the first opening and the second opening,
an antifouling layer located on the surface and an inner wall surface defining the through hole and containing a fluorine compound;
On the back side, a halogen-based compound containing a halogen atom is not located,
The contact angle with respect to water on the surface of the antifouling layer is 90° or more,
The metal mask for vapor deposition, wherein the surface roughness Sa of the surface of the metal mask substrate for vapor deposition is 10 nm or more and 80 nm or less. A surface having a first opening facing the deposition source provided in the deposition apparatus;
a back surface having a second opening smaller than the first opening as a surface opposite to the front surface;
A through hole passing through the first opening and the second opening, a first hole portion including the first opening and having an inverted truncated cone shape, and including the second opening and having a truncated cone shape; A metal mask for deposition having a metal mask substrate for deposition having the through hole including a second hole portion smaller than one hole portion,
An antifouling layer containing a fluorine compound is provided on the surface and an inner wall surface defining the first hole,
A halogen-based compound containing a halogen atom is not located on the back surface and the inner wall surface defining the second hole portion,
The contact angle with respect to water on the surface of the antifouling layer is 90° or more,
The metal mask for vapor deposition, wherein the surface roughness Sa of the surface of the metal mask substrate for vapor deposition is 10 nm or more and 80 nm or less. According to claim 1 or 2,
The metal mask for vapor deposition, wherein the material forming the metal mask substrate for vapor deposition is an iron-nickel alloy or an iron-nickel-cobalt alloy. According to any one of claims 1 to 3,
A metal mask for deposition, wherein the thickness of the metal mask substrate for deposition is 1 μm or more and 100 μm or less. As a method of manufacturing a metal mask for vapor deposition,
A metal deposition metal having a surface for forming a first opening facing an evaporation source of a deposition apparatus and a back surface for forming a second opening located on the opposite side to the surface and smaller than the first opening. preparing the mask material;
Forming a resin layer on the back surface;
Wet-etching the metal mask substrate for deposition from the surface to form a through hole having an inverted truncated pyramid shape, thereby forming the first opening on the surface and forming the second opening on the back surface. thing,
forming an antifouling layer containing a fluorine compound on the surface and the inner wall surface defining the through hole; and
After forming the antifouling layer, the metal mask substrate for deposition and the resin layer are exposed to an alkaline solution to chemically remove the resin layer from the metal mask substrate for deposition. manufacturing method. According to claim 5,
A method for manufacturing a metal mask for deposition, wherein the resin layer is made of polyimide. As a method of manufacturing a metal mask for vapor deposition,
A metal deposition metal having a surface for forming a first opening facing an evaporation source of a deposition apparatus and a back surface for forming a second opening located on the opposite side to the surface and smaller than the first opening. preparing the mask material;
Forming a second hole portion having a truncated cone shape having the second opening on the back surface by wet etching;
Forming a resin layer on the back surface so as to cover the second opening;
By wet-etching the metal mask substrate for deposition from the surface, a first hole having an inverted truncated pyramid shape and the first opening are formed, thereby forming the second hole and the first hole. forming a through hole;
forming an antifouling layer containing a fluorine compound on the surface and the inner wall surface defining the first hole;
After forming the antifouling layer, the resin layer and the metal mask substrate for deposition are exposed to an alkaline solution to chemically remove the resin layer from the metal mask substrate for deposition. manufacturing method. According to claim 7,
A method for manufacturing a metal mask for deposition, wherein the resin layer is made of a photosensitive resin. According to claim 7,
A method for manufacturing a metal mask for deposition, wherein the resin layer is made of polyimide. As a method of manufacturing a metal mask for vapor deposition,
A metal deposition metal having a surface for forming a first opening facing an evaporation source of a deposition apparatus and a back surface for forming a second opening located on the opposite side to the surface and smaller than the first opening. preparing the mask material;
Forming a resin layer on the back surface;
Wet-etching the metal mask substrate for deposition from the surface to form a through hole having an inverted truncated pyramid shape, thereby forming the first opening on the surface and forming the second opening on the back surface. thing,
forming an antifouling layer containing a fluorine compound on the surface and the inner wall surface defining the through hole;
After forming the antifouling layer, exposing the metal mask substrate for deposition and the resin layer to ultraviolet rays to reduce the adhesion of the resin layer to the metal mask substrate for deposition, and
The method of manufacturing a metal mask for deposition comprising peeling the resin layer having reduced adhesion from the metal mask substrate for deposition. According to claim 10,
A method for manufacturing a metal mask for vapor deposition, wherein the resin layer is made of an ultraviolet curable pressure-sensitive adhesive.

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