KR20230094240A - Method for mesuring purity of powder for single crystal growth and high purity powder for single crystal growth capable of mesuring thereby - Google Patents

Abstract

A method for measuring the purity of powder for single crystal growth of the present invention comprises: a sample preparation step of preparing a powder sample for single crystal growth; a Raman analysis step of performing the Raman analysis with respect to the sample; and a purity measurement step of measuring the purity of the sample through Raman analysis values. In addition, the high-purity powder for single crystal growth of the present invention has a cubic phase structure, and the spectral intensity ratio (TO/LO) of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal optical (LO) phonon mode is 0.9 or more and 1.0 or less. A method for measuring the purity of powder for single crystal growth of the present invention comprises: a sample preparation step of preparing a powder sample for single crystal growth; a Raman analysis step of performing the Raman analysis with respect to the sample; and a purity measurement step of measuring the purity of the sample through Raman analysis values. In addition, the high-purity powder for single crystal growth of the present invention has a cubic phase structure, and the spectral intensity ratio (TO/LO) of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal optical (LO) phonon mode is 0.9 or more and 1.0 or less.

Description

Purity measurement method of single crystal growth powder and high purity single crystal growth powder capable of measuring purity by the method

The present invention relates to a method for measuring the purity of powder for single crystal growth and a high-purity single crystal growth powder capable of measuring purity by the method. More specifically, it relates to a method for measuring the purity of a powder for single crystal growth capable of rapidly measuring the purity, and a high-purity single crystal growth powder capable of measuring the purity by the method.

Ceramic single-crystal substrates are variously used as electronic materials such as semiconductors, and ceramic single-crystal substrates having excellent electrical properties can be manufactured from ultra-high purity single-crystal ingots.

In order to grow an ultra-high purity single crystal ingot, the purity of the powder for single crystal growth, which is the raw material of the ingot, must be as high as 99% or higher. In particular, in the case of silicon-based single crystal growth powder widely used as a semiconductor device, impurities such as free silica or free carbon have a great influence on the powder purity. It is required to develop a purity measurement technology for

There are various techniques for measuring the purity of the powder for single crystal growth, for example, glow discharge mass spectrometry (GDMS) and wet analysis (ICP, KS L 1612, ISO21068). However, in the case of glow discharge mass spectrometry, only trace metals are detected in the sample, and the remaining purity calculation conversion is difficult. There are many downsides to this.

Accordingly, there is a demand for technology development for a quantitative analysis method for quickly and accurately selecting ultra-high purity single crystal growth powder having low impurity content.

On the other hand, the foregoing background art is not necessarily known art disclosed to the general public prior to the filing of the present invention.

Korean Registered Patent No. 10-2220438

An object of one embodiment of the present invention is to provide a method for measuring the purity of a powder for single crystal growth for quickly and accurately selecting an ultra-high purity powder for single crystal growth having a low impurity content.

Another object of the present invention is to provide a high-purity powder for single crystal growth, the purity of which can be measured by the above-described purity measurement method.

As a technical means for achieving the above-described technical problem, the method for measuring the purity of powder for single crystal growth of the present invention is a sample preparation step of preparing a powder sample for single crystal growth, a Raman analysis step of Raman analysis of the sample, and a Raman analysis value through A purity measurement step of measuring the purity of the sample is included.

For example, the sample preparation step may include a pulverization step of pulverizing the sample and an impurity removal step of removing impurities from the pulverized sample.

For example, the pulverizing step may include pulverizing the powder particles to a size of 10 μm or less.

For example, the pulverizing step may include pulverizing the sample using a ball milling device.

For example, the impurity removal step may include an acid treatment step of hydrofluoric acid treatment and a heat treatment step of applying heat to the acid-treated powder.

For example, the heat treatment step may include heat treatment at a temperature of 750° C. or higher for 10 hours or more under an air atmosphere in an electric furnace.

For example, the purity measurement step is the spectral intensity ratio of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal-optical (LO) phonon mode among the Raman peaks measured in the Raman analysis step. It may include measuring the purity of the sample using (TO / LO).

According to another aspect of the present invention, the high-purity single crystal growth powder of the present invention has a cubic structure, and has a transverse-optical (TO) phonon mode Raman peak and a longitudinal-optical (LO) phonon mode It is characterized in that the spectral intensity ratio (TO / LO) of the Raman peak of is 0.9 or more and 1.0 or less.

For example, the high-purity single crystal growth powder may have a purity of 99.85 to 99.99%.

For example, the high-purity single crystal growth powder may be 3C-SiC powder.

For example, the high-purity powder for single crystal growth may be characterized in that the average particle diameter of the particles is within 10 μm.

According to any one of the above-described problem solving means of the present invention, the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention can measure the purity more quickly and accurately.

In addition, the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention can easily quantify the high-purity powder by rapid purity measurement.

In the powder for single crystal growth according to another embodiment of the present invention, it is possible to quickly and accurately measure the purity by the above-described purity measurement method by minimizing a phenomenon in which spectroscopic interference occurs in an optical system.

The effects obtainable in the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description below. will be.

1 is a flowchart of a method for measuring the purity of a powder for single crystal growth according to an embodiment of the present invention.
Figure 2 is a flow chart of the sample preparation step of Figure 1;
Figure 3a is a graph showing the results of Raman analysis of low-purity single crystal growth powder.
Figure 3b is a graph showing the results of Raman analysis of high purity powder for single crystal growth.
Figure 4a is a graph showing the XRD analysis results of low-purity single crystal growth powder.
Figure 4b is a graph showing the results of XRD analysis of high-purity single crystal growth powder.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice the present invention with reference to the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the specification, when a part is said to be "connected" to another part, this includes not only the case where it is "directly connected" but also the case where it is "indirectly connected" with another component in between. . In addition, when a certain component is said to "include", this means that it may further include other components without excluding other components unless otherwise stated.

The method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention refers to a method for measuring the purity of the powder for single crystal growth. Here, the powder for single crystal growth may be a powder for producing a single crystal ingot or a substrate, and may be single crystal, polycrystalline, or amorphous.

The method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention may be a method for measuring the purity of the ceramic single crystal growth powder. For example, the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention may be a method for measuring the purity of the silicon-based single crystal growth powder.

A method for measuring the purity of a powder for single crystal growth according to an embodiment of the present invention is characterized in that it is performed through Raman spectroscopy.

Raman spectroscopy is a method of performing qualitative and quantitative analysis of each material by measuring the unique vibration spectrum of the material and finding the unique spectrum of the material.

Scattering is a phenomenon in which the wavelength of light is changed when light passes through a medium, and part of the light is deviated from the direction of travel and proceeds in another direction. Scattering that changes the wavelength of light is called Raman scattering. Raman spectroscopy measures the Raman scattering. Specifically, the intensity of scattered light is displayed as a band or repetitive peak according to frequency, and qualitative and quantitative analysis of the material is performed using the peak spectrum and the like.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a flowchart of a method for measuring the purity of a powder for single crystal growth according to an embodiment of the present invention.

Referring to FIG. 1, the method for measuring the purity of a powder for single crystal growth according to an embodiment of the present invention includes a sample preparation step of preparing a powder sample for single crystal growth (S10), a Raman analysis step of Raman analysis of the sample (S20), and A purity measuring step (S30) of measuring the purity of the sample through the Raman analysis value is included.

The sample preparation step (S10) may be a step of quantifying and preparing a powder for single crystal growth whose purity is to be measured. Specifically, it may include quantifying the powder for single crystal growth to be used in manufacturing the single crystal ingot, and pulverizing and miniaturizing the determined powder for single crystal growth.

In some embodiments, the sample preparation step may further include removing impurities such as free carbon and free silica from the powder for single crystal growth, as shown in FIG. 2 . In order to explain this in more detail, FIG. 2 is also referred to.

Figure 2 is a flow chart of the sample preparation step of Figure 1;

Referring to FIG. 2 , the sample preparation step ( S10 ) may include a pulverization step ( S11 ) of pulverizing the sample and an impurity removal step ( S12 ) of removing impurities from the pulverized sample.

The pulverization step (S11) may be a step of pulverizing the powder for single crystal growth more finely. When the powder for single crystal growth is pulverized more finely, spectroscopic interference can be minimized during Raman analysis.

The fine grinding step (S11) may be a step of grinding the powder particles for single crystal growth to have an average particle diameter of 10 μm or less. If the particle size of the powder for single crystal growth exceeds 10 μm, the particle diameter of the powder for single crystal growth is too large and may cause unintentional light scattering in the Raman analysis process, resulting in deterioration in measurement accuracy.

The pulverization step (S11) may be performed, for example, by a ball mill method, and the ball mill method refers to a process of miniaturizing the sample by causing collision, compression, friction, etc. using a ball. Specifically, in the pulverization step, a jet mill, a hammer mill, or a planetary ball mill may be used. However, the grinding method is not limited thereto, and a vibratory mill, a tumbler mill, a mixer mill, a rod mill, an attrition mill, and a shaker mill mill) can be performed in a variety of ways.

After the pulverization step, an impurity removal step (S12) of removing impurities from the pulverized sample may be performed.

The impurity removal step ( S12 ) may include an acid treatment step of hydrofluoric acid treatment and a heat treatment step of applying heat to the acid-treated powder.

The acid treatment step may be a step of removing impurities in the powder through chemical treatment. For example, the acid treatment step may be performed with hydrofluoric acid (HF). As the acid treatment using hydrofluoric acid is performed, free silica (SiO ₂ ) in the powder for single crystal growth can be easily removed.

The heat treatment process step may be a step of removing impurities in the powder by applying thermal energy to the powder.

The heat treatment process step is preferably performed for 10 minutes to 10 hours at a temperature range of 500 to 1000 ° C, preferably 750 to 900 ° C. For example, the heat treatment step may be performed by applying electricity at 750° C. for 1 hour under an air atmosphere. Free-carbon in the powder for single crystal growth can be easily removed through the heat treatment step.

Referring back to FIG. 1 , after the sample preparation step, the sample is subjected to Raman analysis (S20).

Specifically, the sample is irradiated with a laser for Raman analysis, and Raman peaks by phonons for a specific optical mode generated in the sample are collected.

At this time, lasers for Raman analysis may use lasers of various wavelengths depending on the type of sample. For example, the laser may be performed using an excitation diode laser having a wavelength of 500 to 600 nm.

When the Raman analysis is completed, the purity of the sample is measured through the Raman analysis value (S30).

Specifically, the ratio (TO /LO) of the spectral intensity of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal-optical (LO) phonon mode among the Raman analysis peaks of the sample The purity of can be measured.

The inventors of the present application found that the ratio of spectral intensities (TO/LO) of the horizontal optical phonon mode to the vertical optical phonon mode among the Raman analysis peaks of a powder sample for single crystal growth having a cubic phase structure is close to 1, and the purity is excellent. , and it was found that it was possible to measure the purity of a powder sample for single crystal growth having a cubic phase structure by utilizing the above-described spectral intensity ratio (TO/LO).

Specifically, in a region where the wave number is 0 (eg, the Brillouin-zone (BZ)), the energy of the transverse optical phonon mode and the energy of the longitudinal optical phonon mode are equal, and the transverse optical phonon mode The spectral intensity ratio (TO/LO) of the large longitudinal optical phonon mode approaches 1. In particular, in the case of a cubic phase structure with very high purity (e.g., ultra-high purity diamond), since the order in the crystal structure is very good, Raman scattering can occur regularly, and the transverse optical phonon mode versus the vertical optical phonon mode The ratio of spectral intensities (TO/LO) approaches 1.

On the other hand, when an impurity is included, the order of the crystal structure is degraded due to defects caused by the impurity, and spectroscopic interference occurs in the optical system, so that the energy of a specific mode among the transverse optical phonon mode and the vertical optical phonon mode may be lowered. Accordingly, the ratio of the spectral intensities of the transverse optical phonon mode to the longitudinal optical phonon mode (TO/LO) greatly deviate from 1.

Therefore, the purity of the powder for growing single crystal having a cubic structure can be measured by utilizing the ratio (TO/LO) of the spectral intensities of the transverse optical phonon mode to the vertical optical phonon mode among Raman analysis peaks.

The method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention can be easily applied to the powder for single crystal growth having a cubic structure.

In particular, the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention is more suitable for measuring the purity of the high purity powder for single crystal growth, which is a raw material necessary for growing a high purity single crystal ingot.

Here, the high-purity powder for single crystal growth has a cubic structure and is characterized by having an ultra-high purity of 99.85 to 99.99%. For example, the high-purity single crystal growth powder of the present invention may be 3C-SiC powder.

As described above, when the high-purity single crystal growth powder has a cubic structure and ultra-high purity of 99.85 to 99.99%, the order in the crystal structure is very high, and the phenomenon of spectroscopic interference during Raman analysis can be minimized. Therefore, the high-purity powder for single crystal growth of the present invention has a ratio of spectral intensity (TO /LO) may approach 1. For example, the high-purity powder for single crystal growth of the present invention may have a spectral intensity ratio (TO/LO) of 0.9 or more and 1.0 or less of a transverse optical phonon mode to a longitudinal optical phonon mode.

In addition, the high-purity powder for single crystal growth of the present invention may have an average particle diameter of 10 μm or less. In this case, spectroscopic interference that may occur in the powder for growing a high-purity single crystal in Raman analysis can be minimized.

Hereinafter, with reference to the following experimental examples, it will be described whether the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention is a reliable measuring method.

(experimental example)

In order to verify the effectiveness of the powder purity measurement method for single crystal growth according to an embodiment of the present invention, the purity content measured by the wet purity measurement method and the Raman measured by the powder purity measurement method for single crystal growth according to an embodiment of the present invention The spectral intensity ratio (TO/LO) was compared.

The following [Table 1] is a table showing the purity content measured by the wet purity measuring method and the analysis values measured by the powder purity measuring method for single crystal growth according to an embodiment of the present invention.

Raman ratio ICP-AES, F-Carbon analyzer
(wt %) Sample
(SiC type) Raman
Peak Center
(cm ^-One ) Peak
Height ratio of
TO/LO LO
Width SiC % Free
Carbon % Free Si % Free SiO ₂ % sample
information control group
(6H) TO 788 33596 3.32
　
　 99.90
0.004
0.05
0.05
standard
sample LO 969 10122 experimental group 1
3C-SiC
(GTW 31) TO 793 16184 1.26
16.45
99.16
0.440
0.20
0.20
Gosunhwajeon LO 969 12826 experimental group 2
3C-SiC
(G31) TO 796 45609 0.96
9.06
99.88
0.015
0.06
0.05
After Gosunhwa LO 974 47489 experimental group 3
3C-SiC
(GTW 51) TO 794 21002 1.13
11.18
99.25
0.524
0.12
0.11
Gosunhwajeon LO 969 18633 experimental group 4
3C-SiC
(G51) TO 796 27987 1.02
8.58
99.87
0.018
0.05
0.06
After Gosunhwa LO 972 27373

In this experimental example, powder for growing 6H-SiC single crystal having a hexagonal phase structure was used as the control group. -SiC single crystal growth powder was used.

More specifically, the control group is an experiment using a 6H-SiC standard sample having a purity of 99.90%. This is an experiment using dragon powder. That is, it refers to a powder for single crystal growth that has not been subjected to a pulverization step and an impurity removal step, and corresponds to a powder for single crystal growth that has low purity because impurities are not removed. For convenience of explanation, this is expressed as “Gosunhwajeon”. Experiment group 2 is an experiment using high-purity 3C-SiC single crystal growth powder from which the powder for single crystal growth of Experiment Group 1 is pulverized and impurities are removed. This is an experiment using powder for 3C-SiC single crystal growth. For convenience of explanation, this is expressed as “after high purification”.

The sample pulverization step was performed by pulverizing the powder for single crystal growth using a planetary mill. Specifically, a WC Disk (100mm) was used as a planetary disk, the WC Disk (100mm) was rotated at 3000 RPM, and a grinding bowl was used with the WC Disk (100mm) and the Grinding Bowl The powder for single crystal growth was pulverized by rotating at a rotation ratio of 10:1.

The impurity removal step was performed by acid treatment using hydrofluoric acid and heat treatment by applying electricity at 750° C. for 10 hours under an air atmosphere.

Meanwhile, in this embodiment, as the wet purity measurement method, inductively coupled plasma atomic emission spectroscopy (ICP-AES) was used.

First, the purity of the sample before and after ultra-high purification was measured by a wet purity measurement method. At this time, the sample was pretreated by eluting and neutralizing the sample with hydrofluoric acid, nitric acid, and hydrochloric acid before measuring the purity.

Then, the content of metal free silicon (Metal Free-Si), free silica (Free-SiO ₂ ), and free carbon (Free-Carbon) in the sample was measured using inductively coupled plasma atomic emission spectroscopy, and through each content value The purity value of the sample was calculated.

Next, the purity of the sample before and after ultra-high purification was measured by the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention. Specifically, Raman analysis was performed, and a Raman spectral intensity ratio (TO/LO) was calculated according to the analyzed value.

Meanwhile, Raman analysis was performed using a 514 nm wavelength excitation diode laser.

Looking at experimental groups 1 to 4 in [Table 1], it can be seen that the Raman spectral intensity ratio (TO/LO) of the ultra-purified powder for single crystal growth is closer to 1 than before ultra-purification.

Specifically, referring to FIG. 3a , as a result of Raman analysis of the powder for single crystal growth before ultra-high purification (Experimental Group 1 and Experimental Group 3), it can be confirmed that Raman peaks are observed at 793cm ^-1 and 969cm ^-1 . At this time, the observed Raman peak at 793 cm ^-1 corresponds to a transverse optical phonon, and corresponds to a vertical optical phonon at 969 cm ^-1 . It can be seen that there is a height difference between the Raman peak of the transverse optical phonon mode and the Raman peak of the vertical optical phonon mode in both experimental group 1 and experimental group 3. Through this, it can be seen that the spectral intensity ratio (TO /LO) of the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode is out of 1.

In addition, referring to FIG. 3B, as a result of powder Raman analysis for single crystal growth after ultra-purification (Experimental group 2 and Experimental group 4), it can be confirmed that the height between the Raman peak of the horizontal optical phonon mode and the Raman peak of the vertical optical phonon mode is almost the same. . Through this, it can be seen that the spectral intensity ratio (TO /LO) of the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode is close to 1.

Meanwhile, looking at the contents of metal free-silicon (Metal Free-Si), free silica (Free-SiO ₂ ), and free-carbon (Free-Carbon) in Experimental Groups 1 to 4 measured by the wet method in [Table 1], It can be seen that the contents of free silicon, free silica, and free carbon in Experimental Group 1 and Experimental Group 3 before ultra-high purification are high, and accordingly, it can be confirmed that the purity of the 3C-SiC single crystal growth powder is low. In FIG. 3a, Experimental Group 1 and Experimental Group 3 confirmed that the spectral intensity ratio (TO /LO) of the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode was out of 1, so the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode If the spectral intensity ratio (TO /LO) of the mode is out of 1, it can be seen that the purity of the powder for single crystal growth is low.

In addition, it can be confirmed that the contents of free silicon, free silica, and free carbon in Experimental Group 2 and Experimental Group 4 after ultra-high purification are low, and accordingly, it can be confirmed that the purity of the powder for 3C-SiC single crystal growth is high. In FIG. 3b, experimental group 2 and experimental group 4 confirmed that the spectral intensity ratio (TO /LO) of the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode approached 1, and thus the Raman peak of the transverse optical phonon mode and the vertical optical phonon mode When the spectral intensity ratio (TO /LO) of the phonon mode approaches 1, it can be confirmed that the powder for single crystal growth has high purity.

Therefore, it can be seen that the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention is a method for measuring the purity and is reliable.

In addition, looking at the control group of [Table 1], it can be seen that the 6H-SiC standard sample has a sufficiently low content of free carbon, free silicon, and free silica, and has an ultra-high purity of 99.90%, but silicon-carbon (Si -C) Since the atomic planes have a hexagonal phase structure in which the atomic planes are stacked in a different stacking order than the cubic phase structure, it has a vibration frequency different from that of the 3C-SiC single crystal growth powder, and due to this, the Raman spectral intensity ratio (TO/LO) is 1 It can be seen that it is not close to

Therefore, it can be seen that the method for measuring the purity of the powder for single crystal growth according to one embodiment of the present invention is suitable as a method for measuring the purity of the powder for single crystal growth having a cubic structure.

Meanwhile, after measuring the signal intensity using the Raman spectral intensity ratio (TO/LO) of the powder for single crystal growth measured in [Table 1], the measured value can be converted into the mass of the powder for single crystal growth. At this time, the converted value and the mass of the powder calculated through the wet analysis method were almost identical. For example, when the Raman spectral intensity ratio (TO/LO) was 1.0, the purity of the powder for 3C-SiC single crystal growth was about, 99.9%, and it can be confirmed that free carbon is 0.02%.

On the other hand, looking at Experimental Group 3 and Experimental Group 4, as the content of free carbon increases, the crystallinity defects contributed by antisite carbon increase, resulting in asymmetry in the transverse direction and the Raman peak (i.e., spectral intensity) of the transverse optical phonon mode. It can be seen that there is a tendency to appear relatively high.

Through this, the method for measuring the purity of the powder for single crystal growth according to an embodiment of the present invention measures the purity of the powder for single crystal growth and free It can be seen that this is suitable for predicting the content of impurities, and it can be seen that it is a method for measuring purity with excellent accuracy.

Meanwhile, XRD analysis was performed on experimental groups 1 to 4 in [Table 1].

4a is a graph showing XRD analysis results of low-purity single crystal growth powders, and XRD analysis results for Experimental Group 1 and Experimental Group 3.

4B is a graph showing XRD analysis results of high-purity single crystal growth powders, and XRD analysis results for Experimental Group 2 and Experimental Group 4.

Referring to FIG. 4a, it can be seen that a peak is observed around 2θ - 26.16° in the XRD graphs of 3C-SiC single crystal growth powders having a purity of about 99% (Experimental group 1 and Experimental group 3), which is free carbon. It can be confirmed that it is a peak according to (Free-Carbon). In contrast, referring to FIG. 4B, it can be seen that no peak is observed around 2θ - 26.16° in the XRD graphs of 3C-SiC single crystal growth powders (Experimental group 2 and Experimental group 4) having an ultra-high purity of 99.9%, This indicates that free carbon was reduced by that much.

In addition, it can be seen from FIGS. 4A and 4B that the powder for single crystal growth has a cubic phase structure in which characteristic crystal planes of (111), (200), (220), and (311) are well displayed.

Therefore, it can be seen that the method for measuring the purity of a powder for single crystal growth according to an embodiment of the present invention is reliable as a method for measuring the purity of a powder for single crystal growth having a cubic structure. It can be seen that the carbon-reduced high-purity single crystal growth powder can be rapidly and accurately quantified.

The scope of the present invention is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be construed as being included in the scope of the present invention. do.

Claims (11)

A sample preparation step of preparing a powder sample for single crystal growth;
Raman analysis step of Raman analysis of the sample; and
Including a purity measurement step of measuring the purity of the sample through the Raman analysis value,
A method for determining the purity of powder for single crystal growth.
According to claim 1,
The sample preparation step is
A pulverization step of pulverizing the sample; and
Including an impurity removal step of removing impurities in the unpulverized sample,
A method for determining the purity of powder for single crystal growth. According to claim 2,
The pulverization step is
Comprising the step of pulverizing the powder particles so that the size is 10 μm or less,
A method for determining the purity of powder for single crystal growth. According to claim 2,
The pulverization step is
Including the step of grinding the sample using a ball milling device,
A method for determining the purity of powder for single crystal growth. According to claim 2,
The impurity removal step is
Acid treatment step of hydrofluoric acid treatment; and
Including a heat treatment process step of applying heat to the acid-treated powder,
A method for determining the purity of powder for single crystal growth. According to claim 5,
The heat treatment process step
Including the step of heat treatment at a temperature of 750 ℃ or more for 10 hours or more under an air atmosphere in an electric furnace,
A method for determining the purity of powder for single crystal growth. According to claim 1,
The purity measurement step is
Among the Raman peaks measured in the Raman analysis step, the spectral intensity ratio (TO /LO) of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal-optical (LO) phonon mode Including the step of measuring the purity of the sample using
A method for determining the purity of powder for single crystal growth. It has a cubic phase structure, and the spectral intensity ratio (TO /LO) of the Raman peak of the transverse-optical (TO) phonon mode and the Raman peak of the longitudinal-optical (LO) phonon mode is 0.9 or more and 1.0 or less. characterized by,
High-purity single crystal growth powder. According to claim 8,
The high-purity single crystal growth powder
Characterized in that it has a purity of 99.85 to 99.99%,
High-purity single crystal growth powder. According to claim 8,
The high-purity single crystal growth powder
Characterized in that it is a 3C-SiC powder,
High-purity single crystal growth powder. According to claim 8,
The high-purity single crystal growth powder
Characterized in that the average particle diameter of the particles is within 10 μm,
High-purity single crystal growth powder.

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