KR20230090901A - Composition for manufacturing NTC thermistor Thick films having low resistance and the manufacturing method of the same - Google Patents

Composition for manufacturing NTC thermistor Thick films having low resistance and the manufacturing method of the same Download PDF

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KR20230090901A
KR20230090901A KR1020210180073A KR20210180073A KR20230090901A KR 20230090901 A KR20230090901 A KR 20230090901A KR 1020210180073 A KR1020210180073 A KR 1020210180073A KR 20210180073 A KR20210180073 A KR 20210180073A KR 20230090901 A KR20230090901 A KR 20230090901A
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윤상옥
김신
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주식회사와이테크
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30Apparatus or processes specially adapted for manufacturing resistors adapted for baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003Thick film resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008Thermistors

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Abstract

본 발명은 저저항이고 B정수(온도계수)가 작은 NTC 서미스터 후막 제조용 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는 화학식 (100-x) 스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass) 로 표시되는 식 중, x는 0 내지 60 중량%이고, y는 0 내지 30중량%인 것, 그리고 a는 0 내지 0.5 mol 이고, b도 0 내지 0.5 mol인 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물과 이의 제조방법을 제공한다.The present invention relates to a composition for preparing a thick NTC thermistor film having low resistance and a small B constant (temperature coefficient) and a method for preparing the same, and more particularly, to a spinel compound of the formula (100-x) (Cu 1+a Zn b Mn 2- a O 4 ) + x ruthenium oxide (RuO 2 ) + y lead-free glass (Pb free Glass), in which x is 0 to 60% by weight, y is 0 to 30% by weight, and a is 0 to 0.5 mol, and b is also 0 to 0.5 mol.

Description

저저항 NTC 서미스터 후막 제조용 조성물 및 그 제조방법{Composition for manufacturing NTC thermistor Thick films having low resistance and the manufacturing method of the same}Composition for manufacturing NTC thermistor Thick films having low resistance and the manufacturing method of the same}

본 발명은 저저항이고 B정수(온도계수)가 작은 NTC 서미스터 후막 제조용 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는, NTC 서미스터 후막을 제조함에 있어서, 소결온도가 낮은 구리-망간계 스핀넬 화합물에 저저항을 위해 산화루테늄을 적정량 혼합하고, 850℃ 정도에서 치밀화를 위해 무연유리을 더 첨가함으로써 낮은 저항 및 B정수(온도계수)를 갖는 NTC 서미스터 후막 제조용 조성물 및 그 제조방법을 제공한다. 특히, 본 발명은 다양한 특성의 저항 및 B정수(온도계수)를 갖는 NTC 서미스터 후막을 용이하게 구현하였다는 점에 특징이 있다.The present invention relates to a composition for preparing a thick NTC thermistor film having low resistance and a small B constant (temperature coefficient), and a method for manufacturing the same, and more particularly, to a copper-manganese spinel having a low sintering temperature in manufacturing a thick NTC thermistor film. A composition for preparing a thick NTC thermistor film having low resistance and B constant (temperature coefficient) by mixing an appropriate amount of ruthenium oxide with a compound and further adding lead-free glass for densification at about 850 ° C. and a method for manufacturing the same are provided. In particular, the present invention is characterized in that an NTC thermistor thick film having various characteristics of resistance and B constant (temperature coefficient) is easily implemented.

서미스터는 저항의 온도 계수가 큰, 열에 민감한 저항기이다. 이러한 서미스터에는 2가지 종류가 있다. 한 가지는 온도가 증가함에 따라 저항에 있어서 양의 변화를 나타내는것(정온도계수, PTC)이고, 다른 하나는 온도가 증가함에 따라 저항에 있어서 음의 변화를 나타내는 것(부온도계수, NTC)이다. NTC 서미스터는 통상적으로 소결된 반도체 재료로 이루어지며, 실온에서 10 내지 1,000,000 Ω의 저항값을 갖는 소자를 제조하는데 사용할 수 있으며, 이들 서미스터는 열 감지기 또는 온도 보상 소자로서 광범위하게 사용한다.A thermistor is a heat-sensitive resistor with a large temperature coefficient of resistance. There are two types of these thermistors. One shows a positive change in resistance with increasing temperature (Positive Temperature Coefficient, PTC), and the other shows a negative change in resistance with increasing temperature (Negative Temperature Coefficient, NTC) . NTC thermistors are usually made of sintered semiconductor material and can be used to manufacture devices with resistance values of 10 to 1,000,000 Ω at room temperature, and these thermistors are widely used as thermal sensors or temperature compensation devices.

또한, 서미스터는 전자 기기의 고밀도화 및 고집적화에 따라 후막화 또는 박막화하여 제조함으로서 소형화하고 있으며, 혼성 미세회로(hybrid microcircuits) 등에 응용이 확대되고 있다.In addition, thermistors are miniaturized by manufacturing thick or thin films according to high density and high integration of electronic devices, and their applications to hybrid microcircuits are expanding.

한편, 부온도계수(NTC) 서미스터로는 스핀넬 결정상의 NiMn2O4계 재료가 일반적으로 사용되고 있으며, 대한민국공개특허 제2010-0113321호(2009년04월13일)에서는 NiMn2O4계 재료로 제조된 고밀도 및 나노결정립을 가지는 스핀넬계 부온도계수(NTC) 서미스터 후막을 진공분말분사법에 의해 제조하였으며, 대한민국등록특허 제1260048호(2013년04월25일)에서는 저항값을 낮추기 위해 NiMn2O4계 스핀넬 재료에 전도성 LaNiO3계 페로브스카이트 분말 입자를 분산시켜 부온도계수(NTC) 서미스터 후막의 제조방법을 개시하고 있으나, 제조방법이 난해하고 저저항 후막의 제조가 어려운 문제가 있다.On the other hand, as a negative temperature coefficient ( NTC) thermistor, a NiMn 2 O 4 -based material in the form of a spinel crystal is generally used. A spinel-based negative temperature coefficient (NTC) thermistor thick film having high density and nanocrystalline grains made of was manufactured by a vacuum powder spraying method, and in Korean Patent No. 1260048 (April 25, 2013), NiMn A method for manufacturing a negative temperature coefficient (NTC) thermistor thick film by dispersing conductive LaNiO 3 perovskite powder particles in an O 4 spinel material is disclosed, but the manufacturing method is difficult and it is difficult to manufacture a low resistance thick film. there is

이미 알려진 바와 같이 산화루테늄(RuO2) 또는 루테늄산칼슘(CaRuO4), 루테늄산비스무스(Bi2Ru2O7)등의 루테늄 화합물과 유리성분의 비를 조절함으로써 넓은 범위의 저항변화를 갖는 후막 저항체(thick film resistor)를 제조하고 있다. 또한, 대한민국공개특허 제1994-702640호(1994년08월20일)에서는 (1) 백금족 금속 산화물 1종 이상과 (2) Co2RuO4로 이루어진 도전체 상에 유리질 결합제를 혼합한 부온도계수(NTC) 서미스터 후막의 제조방법을 개시함으로써 저저항 후막을 구현하였으나 B정수(온도계수)의 변화가 제한적인 문제가 있다.As is already known, a thick film with a wide range of resistance changes by adjusting the ratio of ruthenium compounds such as ruthenium oxide (RuO 2 ), calcium ruthenate (CaRuO 4 ), or bismuth ruthenate (Bi 2 Ru 2 O 7 ) and glass components. We are manufacturing thick film resistors. In addition, in Korean Patent Publication No. 1994-702640 (August 20, 1994), (1) one or more platinum group metal oxides and (2) Co 2 RuO 4 The negative temperature coefficient of mixing a glassy binder on a conductor (NTC) Although a low-resistance thick film was realized by disclosing a method for manufacturing a thermistor thick film, there is a problem in that the change in B constant (temperature coefficient) is limited.

따라서, 저저항이고 B정수(온도계수)의 변화가 가능하며, 제조가 용이한 NTC 서미스터 후막 제조용 조성물과 제조방법이 필요한 실정이다.Therefore, there is a need for a composition and method for preparing a thick NTC thermistor film that has low resistance, can change B constant (temperature coefficient), and is easy to manufacture.

대한민국공개특허 제10-2010-0113321호 (2009.04.13.)Republic of Korea Patent Publication No. 10-2010-0113321 (2009.04.13.) 대한민국등록특허 제10-1260048호 (2013.04.25.)Korean Patent Registration No. 10-1260048 (2013.04.25.) 대한민국공개특허 제10-1994-702640호 (1994.08.20.)Korean Patent Publication No. 10-1994-702640 (1994.08.20.)

본 발명은 전술한 종래기술의 문제점을 해결하기 위하여 안출된 것으로서, 본 발명은 저저항이고 B정수(온도계수)가 작은 NTC 서미스터 후막 제조용 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는, NTC 서미스터 후막을 제조함에 있어서, 소결온도가 낮은 구리-망간계 스핀넬 화합물에 저저항을 위해 산화루테늄을 적정량 혼합하고, 850℃ 정도에서 치밀화를 위해 무연유리을 더 첨가함으로써 낮은 저항 및 B정수(온도계수)를 갖는 NTC 서미스터 후막 제조용 조성물 및 그 제조방법을 제공하는 것을 목적으로 한다.The present invention has been made to solve the above-mentioned problems of the prior art, and the present invention relates to a composition for preparing an NTC thermistor thick film having a low resistance and a small B constant (temperature coefficient) and a method for manufacturing the same, and more particularly, to NTC In manufacturing the thermistor thick film, by mixing an appropriate amount of ruthenium oxide for low resistance with a copper-manganese spinel compound having a low sintering temperature, and further adding lead-free glass for densification at about 850 ° C, low resistance and B constant (temperature coefficient It is an object of the present invention to provide a composition for preparing a thick film of an NTC thermistor having a ) and a method for manufacturing the same.

특히, 본 발명은 다양한 특성의 저항 및 B정수(온도계수)를 갖는 NTC 서미스터 후막을 용이하게 구현하였다는 점에 특징이 있다.In particular, the present invention is characterized in that an NTC thermistor thick film having various characteristics of resistance and B constant (temperature coefficient) is easily implemented.

본 발명은 전술한 문제점을 해결하기 위하여, 본 발명은 다음과 같은 수단을 제공한다.In order to solve the above problems, the present invention provides the following means.

구리-망간계 스핀넬화합물과 루테늄화합물을 포함하여 구성되는 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물을 제공한다.Provided is a composition for preparing a low-resistance NTC thermistor thick film comprising a copper-manganese spinel compound and a ruthenium compound.

상기 루테늄화합물은 낮은 저항을 갖는 산화루테늄인 것이 바람직하다.The ruthenium compound is preferably ruthenium oxide having low resistance.

상기 구리-망간계 스핀넬화합물은 Cu1+aZnbMn2-aO4이며, 상기 루테늄화합물은 산화루테늄이고, 화학식 (100-x)스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass)로 표시되는 식 중, x는 0 내지 60 중량%이고, y는 0 내지 30중량%, a 및 b는 0 내지 0.5 mol인 것이 바람직하다.The copper-manganese spinel compound is Cu 1+a Zn b Mn 2-a O 4 , the ruthenium compound is ruthenium oxide, and the chemical formula (100-x) spinel compound (Cu 1+a Zn b Mn 2- a O 4 ) + x ruthenium oxide (RuO 2 ) + y in the formula represented by lead-free glass (Pb free Glass), x is 0 to 60% by weight, y is 0 to 30% by weight, a and b are 0 to It is preferably 0.5 mol.

상기 무연유리는 납을 포함하지 않으며 유리전이온도가 700℃이하인 유리분말인 것이 바람직하다.The lead-free glass is preferably a glass powder that does not contain lead and has a glass transition temperature of 700° C. or less.

또한, 본 발명은 화학식 (100-x)스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass)를 x는 0 내지 60 중량%이고, y는 0 내지 30중량%, a 및 b는 0 내지 0.5 mol이 되도록 혼합하여 혼합분말을 제조하는 단계; 상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 이용하여 제조한 유기바인더를 혼합하는 단계; 및 상기 혼합분말, 상기 레진, 상기 용매의 균일한 혼합 및 혼합분말의 균일한 분산을 위해 3-roll mill을 이용하여 후막 NTC 페이스트를 제조한 후, 스크린 인쇄하여 건조시키고 열처리하여 저저항 NTC 서미스터 후막을 제조하는 방법을 제공한다.In addition, the present invention is a chemical formula (100-x) spinel compound (Cu 1+a Zn b Mn 2-a O 4 ) + x ruthenium oxide (RuO 2 ) + y lead-free glass (Pb free Glass), x is 0 to 60% by weight, y is 0 to 30% by weight, and a and b are mixed to prepare a mixed powder so that they are 0 to 0.5 mol; mixing the mixed powder with an organic binder prepared using ethylcellulose resin and dehydro terpineol as a solvent; And for uniform mixing of the mixed powder, the resin, and the solvent and uniform dispersion of the mixed powder, thick-film NTC paste is prepared using a 3-roll mill, screen-printed, dried, and heat-treated to form a low-resistance NTC thermistor thick film. Provides a method for manufacturing.

상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 이용하여 제조한 유기바인더를 혼합하는 단계;는 상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 중량비 기준으로 10: 90 ~ 20 : 80으로 하여 제조한 유기바인더를, 60 : 40 ~ 50 : 50 wt%가 되도록 혼합하는 단계;인 것이 바람직하다.Mixing the mixed powder with an organic binder prepared using ethylcellulose resin and dehydro terpineol as a solvent; Mixing an organic binder prepared by using dehydro terpineol at a weight ratio of 10:90 to 20:80 at a ratio of 60:40 to 50:50 wt%; preferably.

상기 건조 및 열처리는 100~200℃에서 건조시키고 750℃~950에서 20~40분간 열처리하는 것이 바람직하다.The drying and heat treatment is preferably performed at 100 to 200 ° C and heat treated at 750 ° C to 950 for 20 to 40 minutes.

본 발명은 저저항이고 B정수(온도계수)가 작은 NTC 서미스터 후막을 제조함에 있어서, 일반적인 인쇄방법에 의해 후막을 형성한 후 850℃ 정도에서 열처리하여 치밀화를 이룰 수 있는 조성물과 이의 제조방법을 제공함으로써 전자부품의 소형화, 혼성화 및 고밀도화가 가능하므로 관련 전자부품의 시장확대가 기대된다.In manufacturing an NTC thermistor thick film with low resistance and a small B constant (temperature coefficient), the present invention provides a composition capable of forming a thick film by a general printing method and then heat-treating at about 850 ° C to achieve densification and a method for manufacturing the same. As a result, miniaturization, hybridization, and high density of electronic components are possible, so the market expansion of related electronic components is expected.

도 1은 본 발명에 의한 산화루테늄(RuO2) 함량에 대한 NTC 서미스터 후막의 면저항과 B정수 변화이다.1 is a change in sheet resistance and B constant of an NTC thermistor thick film with respect to ruthenium oxide (RuO 2 ) content according to the present invention.

NTC 서미스터 후막은 진공분말분사법이나 플라즈마용사법등 특정한 장치를 이용하거나 루테늄화합물을 유리와 혼합하여 제조하고 있으며, 저항과 B정수(온도계수)의 변화가 제한적이다.NTC thermistor thick film is manufactured by using specific equipment such as vacuum powder spraying or plasma spraying, or by mixing ruthenium compound with glass, and the change in resistance and B constant (temperature coefficient) is limited.

한편, 소결온도가 낮은 구리-망간계 스핀넬 화합물에 저저항을 위해 루테늄화합물, 바람직하게는 낮은 저항값을 갖는 산화루테늄을 적정량 혼합하여 낮은 저항 및 B정수(온도계수)를 구현하고, 치밀화를 위해 무연유리을 더 첨가하여 인쇄용 NTC 서미스터 후막 조성물을 제조함으로서 적정성을 확인하기 위하여 개발을 진행하였다. 무연유리는 환경을 고려하여 납이 포함되지 않은 것으로 채택하였다.On the other hand, by mixing an appropriate amount of a ruthenium compound for low resistance, preferably ruthenium oxide having a low resistance value, with a copper-manganese spinel compound having a low sintering temperature, low resistance and B constant (temperature coefficient) are realized, and densification is achieved. Development was carried out to confirm the suitability by preparing an NTC thermistor thick film composition for printing by adding lead-free glass for printing. Lead-free glass was adopted as lead-free in consideration of the environment.

본 발명은 저저항이고 B정수(온도계수)가 작은 NTC 서미스터 후막 제조용 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는 화학식 (100-x)스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass)로 표시되는 식 중, x는 0 내지 60 중량%이고, y는 0 내지 30중량%인 것, 그리고 a는 0 내지 0.5 mol이고, b도 0 내지 0.5mol인 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물과 이의 제조방법을 제공한다.The present invention relates to a composition for preparing a thick NTC thermistor film having a low resistance and a small B constant (temperature coefficient) and a method for preparing the same, and more particularly, to a composition having the chemical formula (100-x) spinel compound (Cu 1+a Zn b Mn 2- a O 4 ) + x ruthenium oxide (RuO 2 ) + y in the formula represented by lead-free glass (Pb free Glass), x is 0 to 60% by weight, y is 0 to 30% by weight, and a is 0 to 0.5 mol, and b is also 0 to 0.5 mol.

여기서, 산화루테늄이 60중량%를 초과하면 PTC 특성으로 전환되어 바람직하지 않고, 스핀넬화합물이 적어 스핀넬화합물에 의한 B정수 값의 변환율에 제한이 발생되는 문제점도 동시에 존재한다. 그러므로, 이 값을 초과하지 않는 것이 좋다.Here, if the ruthenium oxide exceeds 60% by weight, it is undesirably converted to PTC characteristics, and there is also a problem that the conversion rate of the constant B value by the spinel compound is limited due to the small number of spinel compounds. Therefore, it is recommended not to exceed this value.

또한, Zn값도 지나치게 많아지면 저항이 매우 높이 오르게 되며, 따라서 서미스터의 성능 저하가 초래되므로 0.5몰까지만 첨가하는 것이 바람직하다. 특히 구리-망간 스핀넬화합물이 갖는 고유의 기능이 크게 희석되는 결과가 초래된다.In addition, if the Zn value is too large, the resistance rises very high, and thus the performance of the thermistor is deteriorated. Therefore, it is preferable to add only up to 0.5 mol. In particular, the unique function of the copper-manganese spinel compound is significantly diluted.

이와 같은 본 발명의 조성물은 다음과 같은 일반적인 세라믹 제조방법에 의해 용이하게 제조할 수 있다.Such a composition of the present invention can be easily prepared by a general ceramic manufacturing method as follows.

상기 스핀넬화합물(Cu1+aZnbMn2-aO4) 분말을 제조하기 위하여 시약급의 MnCO3(99%, Daejung Chem. Co., Korea), CuO(99%, Yakuri, Chem. Co., Japan) 및 ZnO(99.9%, Kojundo Chem. Co., Japan)을 사용하였다. 상기 MnCO3, CuO 및 NiO을 [표 1]의 조성에 따라 칭량된 분말을 폴리에틸렌제 용기에 넣고, 직경 10 mm의 지르코니아 ball 과 에탄올을 사용하여 12시간 동안 ball milling하여 혼합하였다. 분쇄 및 혼합된 분말을 건조시킨 후, 750℃에서 5시간 동안 하소하여 구리-망간계 스핀넬상 분말을 합성하였다. To prepare the spinel compound (Cu 1+a Zn b Mn 2-a O 4 ) powder, reagent grade MnCO 3 (99%, Daejung Chem. Co., Korea), CuO (99%, Yakuri, Chem. Co., Japan) and ZnO (99.9%, Kojundo Chem. Co., Japan) were used. The powders of MnCO 3 , CuO and NiO weighed according to the composition of [Table 1] were placed in a polyethylene container, and mixed by ball milling using 10 mm diameter zirconia balls and ethanol for 12 hours. After drying the pulverized and mixed powder, it was calcined at 750° C. for 5 hours to synthesize a copper-manganese spinel-like powder.

합성된 분말은 지름이 10mm인 원형의 금속몰드에서 유압프레스를 이용하여 100 MPa의 압력으로 성형한 다음, 전기로를 이용하여 1000℃에서 1시간동안 소결하였다. 소결체의 기본물성은 은(Ag) 페이스트를 양면에 인쇄한 후 650℃에서 30분 동안 열처리하여 평가하였다. The synthesized powder was molded at a pressure of 100 MPa using a hydraulic press in a circular metal mold having a diameter of 10 mm, and then sintered at 1000 ° C. for 1 hour using an electric furnace. The basic physical properties of the sintered body were evaluated by heat treatment at 650° C. for 30 minutes after printing silver (Ag) paste on both sides.

본 발명에 의한 후막 NTC 페이스트는 상기한 바와 같이 NTC 특성의 스핀넬 합성분말, 산화루테늄과 같은 전도성 입자와 접합 및 절연성 역할을 하는 무연유리 분말이 일정 비율로 유기 바인더에 분산된 것이다. As described above, the thick-film NTC paste according to the present invention is obtained by dispersing NTC-characteristic spinel synthetic powder and lead-free glass powder that serves to bond and insulate conductive particles such as ruthenium oxide in an organic binder at a certain ratio.

따라서, 합성분말은 산화루테늄과 무연유리 분말과 함께 하기 표 2에 나타낸 조성에 따라 칭량한 후, 폴리에틸렌제 용기에 넣고, 직경 10 mm의 지르코니아 ball 과 에탄올을 사용하여 12시간 동안 ball milling하여 혼합하였다. 분쇄 및 혼합된 분말을 건조시킨 다음, 유발을 사용하여 분쇄 후 325 mesh의 sieve를 이용하여 sieving하여 후막제조용 분말로 사용하였다. 여기서, 무연유리 분말(PSG Co., Korea)은 BaO - ZnO - Al2O3 - B2O3 - SiO2계 유리로 Tg가 690℃이고, 밀도가 3.3 g/cm2이며, 평균입경이 2㎛이다.Therefore, the synthesized powder was weighed together with ruthenium oxide and lead-free glass powder according to the composition shown in Table 2, put into a polyethylene container, and ball milled for 12 hours using a 10 mm diameter zirconia ball and ethanol and mixed. . The pulverized and mixed powder was dried, then pulverized using a mortar, and then sieved using a 325 mesh sieve to be used as a powder for preparing a thick film. Here, the lead-free glass powder (PSG Co., Korea) is a BaO - ZnO - Al 2 O 3 - B 2 O 3 - SiO 2 -based glass with a Tg of 690 °C, a density of 3.3 g/cm 2 , and an average particle diameter of 2 μm.

또한, 혼합된 분말을 유기바인더와 60:40 wt%가 되도록 분산하였으며, 여기서, 혼합된 분말과 유기바인더는 60:40~50:50wt%의 범위로 하는 것이 바람직하다. 상기 유기바인더는 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 중량비 기준으로 10:90으로 하여 제조하였으며, 무기물(합성분말, RuO2분말과 유리분말)과 균일분산을 위해 3-roll mill을 이용하여 후막 NTC 페이스트를 제조하였다. 여기서 상기 중량비는 10:90~20:80의 범위로 하는 것이 바람직하다. In addition, the mixed powder was dispersed with the organic binder to be 60:40 wt%, where the mixed powder and the organic binder are preferably in the range of 60:40 to 50:50 wt%. The organic binder was prepared by using ethylcellulose resin and dehydro terpineol as a solvent in a weight ratio of 10:90, and for uniform dispersion with inorganic materials (synthetic powder, RuO 2 powder and glass powder), 3 - Thick film NTC paste was prepared using a roll mill. Here, the weight ratio is preferably in the range of 10:90 to 20:80.

제조된 후막 NTC 페이스트를 사용하여 후막을 형성하기 전에 알루미나 기판위에 먼저 스크린 프린팅으로 상용 Ag-Pd 페이스트를 인쇄 후 50℃/min으로 승온하여 850℃에서 30분간 소결하여 전극을 형성하였다. 이렇게 얻어진 전극패턴위에 패턴을 가로와 세로가 1 in ×1 in, 즉, 가로와 세로 길이비가 1이 되도록 하여 스크린 프린팅으로 인쇄하였다. 이 때, 사용된 스크린의 재질은 325 메쉬의 스테인리스 스틸이며, 유체막의 두께는 10㎛이다. NTC 후막을 인쇄 후 150℃에서 10분간 유지하여 건조하였고, 수평식 급속 승온로를 이용하여 50℃/min의 승온속도로 850℃에서 30 분간 소결 후 로냉을 거쳐 최종 후막 NTC를 형성하였다.Before forming a thick film using the prepared thick film NTC paste, a commercially available Ag-Pd paste was first printed on an alumina substrate by screen printing, and then heated at 50 °C/min and sintered at 850 °C for 30 minutes to form an electrode. On the electrode pattern obtained in this way, the pattern was printed by screen printing so that the width and length were 1 in × 1 in, that is, the width and height ratio was 1. At this time, the material of the screen used was 325 mesh stainless steel, and the thickness of the fluid film was 10 μm. After printing, the NTC thick film was dried by holding at 150 ° C for 10 minutes, and then sintered at 850 ° C for 30 minutes at a heating rate of 50 ° C / min using a horizontal rapid heating furnace, and then furnace cooled to form the final thick film NTC.

소결된 후막 NTC 서미스터의 저항은 멀티미터(3457A,Hewlett Packard, USA)를 이용하여 비저항과 면저항을 측정 하였다. 또한, NTC 후막의 B정수는 항온기를 이용하여 하기 아래 식에 의해 계산된다.The resistivity of the sintered thick film NTC thermistor was measured for resistivity and sheet resistance using a multimeter (3457A, Hewlett Packard, USA). In addition, the B constant of the NTC thick film is calculated by the following formula using a thermostat.

Figure pat00001
Figure pat00001

상기 식에서, R25 및 R85는 각각 25℃, 85℃에서 측정된 전기저항이며, T25와 T85는 25℃, 85℃의 절대온도를 의미한다.In the above formula, R 25 and R 85 are electrical resistances measured at 25°C and 85°C, respectively, and T 25 and T 85 are absolute temperatures of 25°C and 85°C.

이하, 실시 예를 통하여 본 발명의 구성 및 효과를 더욱 상세히 설명하고자 한다. 이들 실시 예는 오로지 본 발명을 예시하기 위한 것일 뿐 본 발명의 범위가 이들 실시 예에 의해 제한되는 것은 아니다.Hereinafter, the configuration and effects of the present invention will be described in more detail through examples. These examples are only for illustrating the present invention, but the scope of the present invention is not limited by these examples.

<실시예><Example>

스핀넬화합물(Cu1+aZnbMn2-aO4) 분말을 제조하기 위하여 시약급의 MnCO3(99%, Daejung Chem. Co., Korea), CuO(99%, Yakuri, Chem. Co., Japan) 및 ZnO(99.9%, Kojundo Chem. Co., Japan)을 사용하였다. 상기 MnCO3, CuO 및 NiO을 [표 1]의 조성에 따라 칭량된 분말을 폴리에틸렌제 용기에 넣고, 직경 10 mm의 지르코니아 ball 과 에탄올을 사용하여 12시간 동안 ball milling하여 혼합하였다. 분쇄 및 혼합된 분말을 건조시킨 후, 750 ℃에서 5시간 동안 하소하여 구리-망간계 스핀넬상 분말을 합성하였다. To prepare spinel compound (Cu 1+a Zn b Mn 2-a O 4 ) powder, reagent grade MnCO 3 (99%, Daejung Chem. Co., Korea), CuO (99%, Yakuri, Chem. Co. ., Japan) and ZnO (99.9%, Kojundo Chem. Co., Japan) were used. The powders of MnCO 3 , CuO and NiO weighed according to the composition of [Table 1] were placed in a polyethylene container, and mixed by ball milling using 10 mm diameter zirconia balls and ethanol for 12 hours. After drying the pulverized and mixed powder, it was calcined at 750° C. for 5 hours to synthesize a copper-manganese spinel-like powder.

합성된 분말은 지름이 10mm인 원형의 금속몰드에서 유압프레스를 이용하여 100 MPa의 압력으로 성형한 다음, 전기로를 이용하여 1000℃에서 1시간동안 소결하였다. 소결체의 기본물성은 은(Ag) 페이스트를 양면에 인쇄한 후 650℃에서 30분 동안 열처리하여 평가하였다.The synthesized powder was molded at a pressure of 100 MPa using a hydraulic press in a circular metal mold having a diameter of 10 mm, and then sintered at 1000 ° C. for 1 hour using an electric furnace. The basic physical properties of the sintered body were evaluated by heat treatment at 650° C. for 30 minutes after printing silver (Ag) paste on both sides.

소결한 구리-망간계 스핀넬 화합물의 전기적 특성은 하기 표 1에서 보는 바와 같다.Electrical properties of the sintered copper-manganese spinel compound are shown in Table 1 below.

소결한 구리-망간계 스핀넬 화합물의 전기적 특성Electrical properties of sintered copper-manganese spinel compounds 표기Mark 조성(wt%)Composition (wt%) 소결온도(℃)Sintering temperature (℃) 비저항(ohm.mm)Resistivity (ohm.mm) B정수 (K)BInteger (K) CEMCEM Cu1.5Mn1.5O4 Cu 1.5 Mn 1.5 O 4 10001000 37.137.1 13501350 CCMCCM CuMn2O4 CuMn 2 O 4 10001000 178.8178.8 21872187 CZMCZM Cu0.5Zn0.5Mn2O4 Cu 0.5 Zn 0.5 Mn 2 O 4 10001000 1376.81376.8 24622462

일반적으로 NTC 서미스터 재료로는 니켈-망간계 스핀넬 화합물이 사용되고 있는데 소결온도가 높고 비저항이 높아 본 발명에서는 구리-망간계 스핀넬 화합물이 적합할 것으로 판단되어 기본실험을 진행한 결과 표 1에 나타낸 바와 같이 1000℃에서 수축율 20% 정도의 충분한 소결이 이루어 졌으며, 비저항 값도 매우 낮음을 알 수 있었다. 또한 구리량이 많아지면 비저항과 B정수가 낮아지고, 망간 또는 아연으로 치환하면 비저항과 B정수가 높아짐을 알 수 있으며,이러한 결과는 NTC 서미스터 후막의 특성을 제어하는데 매우 유용한 결과이다. 즉, 구리와 아연의 상대적인 양을 조절함으로써 B정수의 변화를 크게할 수 있고, 이는 종래 기술 대비 핵심적인 차별점이 된다. In general, a nickel-manganese spinel compound is used as an NTC thermistor material. It has a high sintering temperature and high resistivity, so it was judged that a copper-manganese spinel compound would be suitable for the present invention, and as a result of basic experiments, the results shown in Table 1 As shown, sufficient sintering with a shrinkage rate of about 20% was achieved at 1000 ° C, and it was found that the specific resistance value was also very low. In addition, when the amount of copper increases, the resistivity and B constant decrease, and when substituted with manganese or zinc, the resistivity and B constant increase. These results are very useful for controlling the characteristics of the NTC thermistor thick film. That is, by adjusting the relative amounts of copper and zinc, it is possible to increase the change in B constant, which is a key differentiator compared to the prior art.

본 발명에 의한 후막 NTC 페이스트는 상기한 바와 같이 NTC 특성의 스핀넬 합성분말, 산화루테늄과 같은 전도성 입자와 접합 및 절연성 역할을 하는 무연유리 분말이 일정 비율로 유기 바인더에 분산된 것이다.As described above, the thick-film NTC paste according to the present invention is obtained by dispersing NTC-characteristic spinel synthetic powder and lead-free glass powder that serves to bond and insulate conductive particles such as ruthenium oxide in an organic binder at a certain ratio.

따라서, 합성분말은 산화루테늄과 무연유리 분말과 함께 하기 표 2에 나타낸 조성에 따라 칭량한 후, 폴리에틸렌제 용기에 넣고, 직경 10 mm의 지르코니아 ball 과 에탄올을 사용하여 12시간 동안 ball milling하여 혼합하였다. 분쇄 및 혼합된 분말을 건조시킨 다음, 유발을 사용하여 분쇄 후 325 mesh의 sieve를 이용하여 sieving하여 후막제조용 분말로 사용하였다. 여기서, 무연유리 분말(PSG Co., Korea)은 BaO - ZnO - Al2O3 - B2O3 - SiO2계 유리로 Tg가 690℃이고, 밀도가 3.3 g/cm2이며, 평균입경이 2㎛이다.Therefore, the synthesized powder was weighed together with ruthenium oxide and lead-free glass powder according to the composition shown in Table 2, put into a polyethylene container, and ball milled for 12 hours using a 10 mm diameter zirconia ball and ethanol and mixed. . The pulverized and mixed powder was dried, then pulverized using a mortar, and then sieved using a 325 mesh sieve to be used as a powder for preparing a thick film. Here, the lead-free glass powder (PSG Co., Korea) is a BaO - ZnO - Al 2 O 3 - B 2 O 3 - SiO 2 -based glass with a Tg of 690 °C, a density of 3.3 g/cm 2 , and an average particle diameter of 2 μm.

또한, 혼합된 분말을 유기바인더와 60:40 중량비가 되도록 분산하였으며, 유기바인더는 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 중량비 10:90로 하여 제조하였으며, 무기물(합성분말, RuO2분말과 유리분말)과 균일분산을 위해 3-roll mill을 이용하여 후막 NTC 페이스트를 제조하였다. In addition, the mixed powder was dispersed with an organic binder in a weight ratio of 60:40, and the organic binder was prepared by using ethylcellulose resin and dehydro terpineol as a solvent in a weight ratio of 10:90. powder, RuO 2 powder and glass powder) and thick film NTC paste were prepared using a 3-roll mill for uniform dispersion.

제조된 후막 NTC 페이스트를 사용하여 후막을 형성하기 전에 알루미나 기판위에 먼저 스크린 프린팅으로 상용 Ag-Pd 페이스트를 인쇄 후 50℃/min으로 승온하여 850℃에서 30분간 소결하여 전극을 형성하였다. 이렇게 얻어진 전극패턴 위에 패턴을 가로와 세로가 1 in ×1 in, 즉, 가로와 세로 길이비가 1이 되도록 하여 스크린 프린팅으로 인쇄하였다. 이 때, 사용된 스크린의 재질은 325 메쉬의 스테인리스 스틸이며, 유체막의 두께는 10㎛이다. NTC 후막을 인쇄 후 150℃에서 10분간 유지하여 건조하였고, 수평식 급속 승온로를 이용하여 50℃/min의 승온속도로 850℃에서 30 분간 소결 후 로냉을 거쳐 최종 후막 NTC를 형성하였다. 여기서 건조온도는 100~200℃의 범위에서 가능하다.Before forming a thick film using the prepared thick-film NTC paste, a commercially available Ag-Pd paste was first screen-printed on an alumina substrate and then heated at 50 °C/min and sintered at 850 °C for 30 minutes to form an electrode. On the electrode pattern obtained in this way, the pattern was printed by screen printing so that the width and length were 1 in × 1 in, that is, the width and height ratio was 1. At this time, the material of the screen used was 325 mesh stainless steel, and the thickness of the fluid film was 10 μm. After printing, the NTC thick film was dried by holding at 150 ° C for 10 minutes, and then sintered at 850 ° C for 30 minutes at a heating rate of 50 ° C / min using a horizontal rapid heating furnace, and then furnace cooled to form the final thick film NTC. Here, the drying temperature may be in the range of 100 to 200°C.

소결된 후막 NTC 서미스터의 저항은 멀티미터(3457A,Hewlett Packard, USA)를 이용하여 면저항을 측정 하였다. 또한, NTC 후막의 B정수는 항온기를 이용하여 25℃, 85℃에서 측정된 전기저항으로부터 계산하였다.The sheet resistance of the sintered thick film NTC thermistor was measured using a multimeter (3457A, Hewlett Packard, USA). In addition, the B constant of the NTC thick film was calculated from the electrical resistance measured at 25 ° C and 85 ° C using a thermostat.

<비교예><Comparative example>

본 발명에서 산화루테늄의 변화에 따른 효과를 알아보기 위해 하기 표 2에서 나타낸 바와 같이 산화루테늄을 첨가하지 않은 조성에 대해 상기에서 서술한 동일한 방법으로 900℃에서 30 분간 소결시켜 시편을 제조하여 특성을 평가하였다. In order to examine the effect of the change of ruthenium oxide in the present invention, as shown in Table 2 below, a specimen was prepared by sintering at 900 ° C. for 30 minutes in the same manner as described above for the composition without the addition of ruthenium oxide, and the characteristics were evaluated. evaluated.

조성에 따른 면저항과 B정수 변화Changes in sheet resistance and B constant according to composition 번호number 조성 (wt%)Composition (wt%) 무연유리(wt%)Lead-free glass (wt%) 면저항(ohm/in2)Sheet resistance (ohm/in 2 ) B정수(K)BInteger (K) CEMCEM CCMCCM CZMCZM RuO2 RuO 2 비교예comparative example 00 100100 00 00 55 1,380,0001,380,000 26952695 실시예1Example 1 00 9090 00 1010 1010 245,400245,400 24172417 실시예2Example 2 00 8282 00 1818 2020 17,40017,400 15741574 실시예3Example 3 00 7575 00 2525 2020 17501750 13761376 실시예4Example 4 00 7070 00 3030 2020 485485 12251225 실시예5Example 5 00 6565 00 3535 2020 8888 345345 실시예6Example 6 00 6565 00 3535 2525 427427 11031103 실시예7Example 7 00 6565 00 3535 3030 24162416 14621462 실시예8Example 8 00 6060 00 4040 2020 5252 9797 실시예9Example 9 00 5050 00 5050 2020 2525 99 실시예10Example 10 00 4040 00 6060 2020 1515 66 실시예11Example 11 7575 00 00 2525 2020 598598 14291429 실시예12Example 12 7070 00 00 3030 2020 233233 904904 실시예13Example 13 00 00 77.577.5 22.522.5 2020 113,700113,700 19481948 실시예14Example 14 00 00 7070 3030 2020 86068606 18581858 실시예15Example 15 00 00 7070 3030 1515 982982 13241324 실시예16Example 16 00 00 7070 3030 1010 244244 259259 실시예17Example 17 3535 3535 00 3030 2020 302302 10361036 실시예18Example 18 3535 00 3535 3030 2020 478478 11581158 실시예19Example 19 00 3535 3535 3030 2020 866866 14271427

구리-망간계 스핀넬 화합물을 산화루테늄과 무연유리 분말과 함께 조성을 변화하며 제조한 후막 NTC 서미스터의 면저항과 B정수의 변화는 표 2에서 보는 바와 같다. 표 2에서 구리-망간계 스핀넬 화합물과 산화루테늄의 량을 100wt%로 하고 추가로 무연유리 분말을 첨가한 조성물로 기본실험 결과와 마찬가지로 산화루테늄의 함량이 증가하면 면저항과 B정수가 낮아짐을 알 수 있다. 이러한 결과는 도 1에서 나타낸 바와 같이 무연유리 분말을 20wt%로 고정하고 산화루테늄(RuO2) 함량에 대한 NTC 서미스터 후막의 면저항과 B정수 변화를 보면 더욱 분명히 알 수 있으며, 면저항의 경우 완만하게 감소하는 반면, B정수는 산화루테늄(RuO2) 함량이 30wt% 내지 40wt% 사이에서 급격히 변화됨을 볼 수 있다.Table 2 shows the changes in sheet resistance and B constant of thick-film NTC thermistors prepared by varying the composition of a copper-manganese spinel compound together with ruthenium oxide and lead-free glass powder. Table 2 shows that the amount of copper-manganese spinel compound and ruthenium oxide is 100wt%, and the sheet resistance and B constant decrease as the content of ruthenium oxide increases, as in the basic experiment results. can As shown in FIG. 1, the lead-free glass powder is fixed at 20wt% and the sheet resistance of the NTC thermistor thick film and the B constant change with respect to the ruthenium oxide (RuO 2 ) content can be seen more clearly. On the other hand, the B constant can be seen that the ruthenium oxide (RuO 2 ) content rapidly changes between 30wt% and 40wt%.

이러한 결과들로부터 도전성인 산화루테늄(RuO2)이 후막 NTC 서미스터 조성물에서 면저항과 B정수 변화에 매우 중요한 성분이며, 산화루테늄(RuO2) 함량이 30wt% 정도까지는 스핀넬 화합물이 특성의 주된 역할을 하고, 40wt% 이상에서는 산화루테늄(RuO2)이 주된 역할에 기여한 것으로 판단할 수 있다. 또한 산화루테늄(RuO2) 함량이 60wt%를 초과하게 되면 저항이 온도에 따라 증가하는 PTC 특성으로 전환될 가능성이 존재할 수 있다.From these results, it is clear that conductive ruthenium oxide (RuO 2 ) is a very important component for changing the sheet resistance and B constant in the thick-film NTC thermistor composition, and the spinel compound plays a major role in the characteristics until the ruthenium oxide (RuO 2 ) content is about 30 wt%. And, at 40wt% or more, it can be determined that ruthenium oxide (RuO 2 ) contributed to the main role. In addition, when the ruthenium oxide (RuO 2 ) content exceeds 60wt%, there may be a possibility of conversion to PTC characteristics in which resistance increases with temperature.

한편, 결합제 역할을 하는 무연 유리의 경우, 함량이 증가하면 면저항과 B정수가 약간 증가하지만 후막의 치밀화와 안정화를 위하여 적정량의 첨가가 바람직하며, 본 발명의 경우 10wt% 내지 30wt% 사이가 적당함을 알 수 있다. On the other hand, in the case of lead-free glass serving as a binder, sheet resistance and B constant increase slightly as the content increases, but an appropriate amount is preferably added for densification and stabilization of the thick film, and in the case of the present invention, between 10wt% and 30wt% is suitable can know

본 발명을 통하여 저저항이고 B정수가 작은 NTC 서미스터 후막을 제조함에 있어서, NTC 특성의 스핀넬 합성분말, 산화루테늄과 같은 전도성 입자와 접합 및 절연성 역할을 하는 무연유리 분말이 일정 비율로 유기 바인더에 분산시킨 페이스트를 제조하여 일반적인 인쇄방법에 의해 형성한 후 850℃ 정도에서 열처리하여 치밀화를 이룰 수 있는 조성물과 이의 제조방법을 제공함으로써, 전자부품의 소형화, 혼성화 및 고밀도화가 가능할 것으로 판단된다. 여기서 750~950℃의 범위로 열처리하는 것이 가능하며, 따라서 위 850℃로 한정되는 것은 아니다. 아울러 열처리시간도 20~40분 범위에서 수행할 수 있다.In manufacturing the NTC thermistor thick film with low resistance and low B constant through the present invention, the NTC-characteristic spinel synthetic powder and lead-free glass powder, which plays a bonding and insulating role with conductive particles such as ruthenium oxide, are added to an organic binder at a certain ratio. It is believed that miniaturization, hybridization, and high density of electronic components are possible by providing a composition and a manufacturing method capable of achieving densification by preparing a dispersed paste, forming it by a general printing method, and heat-treating at about 850 ° C. Here, it is possible to heat treatment in the range of 750 ~ 950 ℃, therefore, it is not limited to the above 850 ℃. In addition, the heat treatment time may be performed in the range of 20 to 40 minutes.

이상과 같이 본 발명을 첨부되는 도면과 바람직한 실시예를 기초로 상세히 설명하였으나, 본 발명의 특허청구범위는 본 실시예에 의해서 제한되는 것으로 해석되어서는 아니됨은 자명하다고 할 것이다.As described above, the present invention has been described in detail based on the accompanying drawings and preferred embodiments, but it will be apparent that the claims of the present invention should not be construed as being limited by the present embodiments.

Claims (7)

구리-망간계 스핀넬화합물과 루테늄화합물을 포함하여 구성되는 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물.A composition for preparing a low resistance NTC thermistor thick film comprising a copper-manganese spinel compound and a ruthenium compound. 제1항에 있어서,
상기 루테늄화합물은 낮은 저항을 갖는 산화루테늄인 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물.
According to claim 1,
The composition for preparing a low resistance NTC thermistor thick film, characterized in that the ruthenium compound is ruthenium oxide having a low resistance.
제2항에 있어서,
상기 구리-망간계 스핀넬화합물은 Cu1+aZnbMn2-aO4이며,
상기 루테늄화합물은 산화루테늄이고,
화학식 (100-x)스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass)로 표시되는 식 중, x는 0 내지 60 중량%이고, y는 0 내지 30중량%, a 및 b는 0 내지 0.5 mol인 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물.
According to claim 2,
The copper-manganese spinel compound is Cu 1+a Zn b Mn 2-a O 4 ,
The ruthenium compound is ruthenium oxide,
Formula (100-x) spinel compound (Cu 1+a Zn b Mn 2-a O 4 ) + x ruthenium oxide (RuO 2 ) + y In the formula represented by lead-free glass (Pb free Glass), x is 0 to 60% by weight, y is 0 to 30% by weight, and a and b are 0 to 0.5 mol.
제1항에 있어서,
상기 무연유리는 납을 포함하지 않으며 유리전이온도가 700℃이하인 유리분말인 것을 특징으로 하는 저저항 NTC 서미스터 후막 제조용 조성물.
According to claim 1,
The lead-free glass is a composition for preparing a low resistance NTC thermistor thick film, characterized in that the glass powder does not contain lead and has a glass transition temperature of 700 ℃ or less.
화학식 (100-x)스핀넬화합물(Cu1+aZnbMn2-aO4) + x산화루테늄(RuO2) + y무연유리(Pb free Glass)를 x는 0 내지 60 중량%이고, y는 0 내지 30중량%, a 및 b는 0 내지 0.5 mol이 되도록 혼합하여 혼합분말을 제조하는 단계;
상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 이용하여 제조한 유기바인더를 혼합하는 단계; 및
상기 혼합분말, 상기 레진, 상기 용매의 균일한 혼합 및 혼합분말의 균일한 분산을 위해 3-roll mill을 이용하여 후막 NTC 페이스트를 제조한 후, 스크린 인쇄하여 건조시키고 열처리하여 저저항 NTC 서미스터 후막을 제조하는 방법.
Formula (100-x) spinel compound (Cu 1+a Zn b Mn 2-a O 4 ) + x ruthenium oxide (RuO 2 ) + y lead-free glass (Pb free Glass), x is 0 to 60% by weight, preparing a mixed powder by mixing y to be 0 to 30% by weight and a and b to be 0 to 0.5 mol;
mixing the mixed powder with an organic binder prepared using ethylcellulose resin and dehydro terpineol as a solvent; and
To uniformly mix the mixed powder, the resin, and the solvent, and to uniformly disperse the mixed powder, a thick film NTC paste is prepared using a 3-roll mill, then screen printed, dried, and heat treated to form a low resistance NTC thermistor thick film. manufacturing method.
제5항에 있어서,
상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 이용하여 제조한 유기바인더를 혼합하는 단계;는
상기 혼합분말과, 에틸셀룰로오즈(ethylcellulose) 레진과 용매인 터피네올(dehydro terpineol)을 중량비 기준으로 10: 90 ~ 20 : 80으로 하여 제조한 유기바인더를, 60 : 40 ~ 50 : 50 wt%가 되도록 혼합하는 단계;인 것을 특징으로 하는 저저항 NTC 서미스터 후막을 제조하는 방법.
According to claim 5,
Mixing the mixed powder with an organic binder prepared using ethylcellulose resin and dehydro terpineol as a solvent;
An organic binder prepared by using the mixed powder, ethylcellulose resin, and dehydro terpineol as a solvent in a weight ratio of 10: 90 to 20: 80, 60: 40 to 50: 50 wt% A method for manufacturing a low-resistance NTC thermistor thick film, characterized in that the step of mixing so as to be.
제5항에 있어서,
상기 건조 및 열처리는 100~200℃에서 건조시키고 750℃~950에서 20~40분간 열처리하는 것을 특징으로 하는 저저항 NTC 서미스터 후막을 제조하는 방법.
According to claim 5,
The drying and heat treatment is a method for manufacturing a low resistance NTC thermistor thick film, characterized in that drying at 100 ~ 200 ℃ and heat treatment at 750 ℃ ~ 950 for 20 to 40 minutes.
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KR101260048B1 (en) 2011-09-07 2013-05-06 한국기계연구원 Conductive particle dispersed negative temperature coefficient film and the preparation method thereof

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