KR20230089557A - Micro device package, micro device package manufacturing apparatus and micro device package manufacturing method - Google Patents

Abstract

The technical idea of the present invention is a metal wire structure including an insulating layer and a metal wire pattern disposed in the insulating layer; a micro device structure mounted on an upper surface of the metal wire structure and including a micro device body having an active surface and an inactive surface opposite to the active surface, and a device layer formed on the active surface; and a shielding film covering the top and side surfaces of the micro device structure and surrounding at least a portion of the side surface of the metal line structure, wherein a portion of the side surface of the metal wire structure is exposed by the shielding film, and the exposed side surface is vertical It provides a micro device package characterized in that the thickness along the direction is uniform.

Description

Micro device package, micro device package manufacturing apparatus, and micro device package manufacturing method {Micro device package, micro device package manufacturing apparatus and micro device package manufacturing method}

The present invention relates to a micro device package, a micro device package manufacturing apparatus, and a micro device package manufacturing method, and more particularly, to a micro device package in which an EMI shielding film is precisely formed and a micro device package manufacturing method.

In recent micro devices, the chip size is reduced and the number of input/output terminals is increased due to miniaturization of process technology and diversification of functions, and the pitch of electrode connection parts is gradually refined. A system-level packaging technology that integrates into a package is emerging.

However, system-level packaging technology can cause electromagnetic interference (EMI) between parts as the operating speed of electronic parts increases and various functions are added, and a separate process is required to improve this.

An object to be solved by the technical idea of the present invention is to provide a micro device package, a micro device package manufacturing apparatus, and a micro device package manufacturing method that provide a uniformly formed shielding film.

In addition, the problem to be solved by the technical spirit of the present invention is not limited to the above-mentioned problems, and other problems can be clearly understood by those skilled in the art from the description below.

In order to achieve the technical problem, the present invention provides the following micro device package, a micro device package manufacturing apparatus, and a micro device package manufacturing method. A micro device package according to the present invention includes a metal line structure including an insulating layer and a metal line pattern disposed in the insulating layer; a micro device structure mounted on an upper surface of the metal wire structure and including a micro device body having an active surface and an inactive surface opposite to the active surface, and a device layer formed on the active surface; and a shielding film covering the top and side surfaces of the micro device structure and surrounding at least a portion of the side surface of the metal line structure, wherein a portion of the side surface of the metal wire structure is exposed by the shielding film, and the exposed side surface is vertical It is characterized in that the thickness along the direction is uniform.

According to an exemplary embodiment, the thickness along the vertical direction of the portion exposed by the shielding film on the side of the jaboseon structure is characterized in that it does not exceed 10 μm.

According to an exemplary embodiment, the metal line structure further includes a non-protruding connection portion electrically connected to the metal line pattern and exposed to a lower portion from the insulating layer, and a level of a lower surface of the non-protruding connection portion in a vertical direction is the metal line Characterized in that it is higher than the level along the vertical direction of the lower surface of the structure.

According to an exemplary embodiment, the micro device structure may be mounted on the metal line structure such that the device layer faces the metal line structure.

In order to achieve the technical problem, the present invention provides a micro device package manufacturing apparatus as follows.

An apparatus for manufacturing a micro device package according to the present invention includes a ring frame having a donut shape; a magnetic tape disposed on the ring frame; a magnetic chuck disposed on a lower surface of the magnetic tape; a metal wire structure attached to an upper surface of the magnetic tape; a micro device structure mounted on the metal line structure; and a shielding film covering the metal wire structure and the micro device structure, wherein the shielding film is formed at a predetermined distance from the upper surface of the magnetic tape in a vertical direction.

According to an exemplary embodiment, the magnetic tape is uniformly stretched by a magnetic force between the magnetic tape and the magnetic chuck.

According to an exemplary embodiment, the metal line structure further includes a non-protruding connection portion electrically connected to the metal line pattern and exposed to a lower portion from the insulating layer, and a level of a lower surface of the non-protruding connection portion in a vertical direction is the metal line Characterized in that it is higher than the level along the vertical direction of the lower surface of the structure.

According to an exemplary embodiment, the distance at which the lowermost end of the shielding film surrounding the side surface of the metal line structure is separated from the upper surface of the magnetic tape does not exceed 10 μm.

According to an exemplary embodiment, the micro device structure is mounted on the metal line structure such that the device layer faces the metal line structure, and the metal line structure includes an insulating layer, a metal line pattern disposed in the insulating layer, and the metal line. It includes a non-protruding connection part electrically connected to the pattern, and a level along the vertical direction of the lower surface of the non-protrusion connection part is higher than a level along the vertical direction of the lower surface of the metal wire structure.

In order to achieve the technical problem, the present invention provides a method for manufacturing a micro device package as follows.

A method for manufacturing a micro device package according to the present invention includes dicing a wafer; placing a magnetic tape on the ring frame; attaching a plurality of diced micro device structures on an upper surface of the magnetic tape; providing a magnetic chuck on the lower surface of the magnetic tape; forming a shielding film on the micro device structures; and separating the micro device structures on which the shielding films are formed from the magnetic tape.

According to an exemplary embodiment, in the step of providing the magnetic chuck on the lower surface of the magnetic tape, the magnetic tape is uniformly stretched by a magnetic force generated between the magnetic tape and the magnetic chuck.

According to an exemplary embodiment, in the step of separating the micro device structures on which the shielding film is formed from the magnetic tape, each of the micro device structures has a thickness of 10 μm in a vertical direction of a side surface of the metal line structure exposed by the shielding film. characterized in that it does not exceed

A microdevice package, a microdevice package manufacturing apparatus, and a microdevice package manufacturing method according to the technical idea of the present invention can provide a microdevice package in which a shielding film is uniformly formed. Accordingly, the yield of the micro device may ultimately be improved.

1 is a schematic diagram schematically illustrating a micro device package according to example embodiments.
FIG. 2 is an enlarged view of portion AA of FIG. 1 .
3 is a schematic diagram schematically illustrating an apparatus for manufacturing a micro device package according to example embodiments.
4 is a flowchart illustrating a method of manufacturing a micro device package according to example embodiments.
5 to 12 are drawings for explaining a method of manufacturing the micro device package of FIG. 1 .

Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, exemplary embodiments of the present disclosure may be modified in many different forms, and the scope of the present disclosure should not be construed as being limited due to the embodiments described below. Exemplary embodiments of the present disclosure are preferably interpreted as being provided to more completely explain the concept of the present disclosure to those with average knowledge in the art. The same sign means the same element throughout. Further, various elements and areas in the drawings are schematically drawn. Accordingly, the concepts of the present disclosure are not limited by the relative sizes or spacings drawn in the accompanying drawings.

Terms such as first and second may be used to describe various components, but the components are not limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and conversely, a second element may be termed a first element, without departing from the scope of the present disclosure.

Terms used in the present disclosure are used only to describe specific embodiments, and are not intended to limit the concept of the present disclosure. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the expression "comprises" or "has" is intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of a number, operation, component, part, or combination thereof is not precluded.

Unless defined otherwise, all terms used herein, including technical terms and scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the concepts of the present disclosure belong. In addition, commonly used terms as defined in the dictionary should be interpreted as having a meaning consistent with what they mean in the context of the technology to which they relate, and in an overly formal sense unless explicitly defined herein. It will be understood that it should not be interpreted.

1 is a schematic diagram schematically illustrating a micro device package according to example embodiments. FIG. 2 is an enlarged view of portion AA of FIG. 1 .

Referring to FIGS. 1 and 2 , a micro device package 10 may include a metal line structure 200 , a micro device structure 100 , and a shielding film 500 . The metal line structure 200 may be disposed under the micro device structure 100 and electrically connect the micro device structure 100 to an external connection terminal. The metal line structure 200 may include an insulating layer 210 and a metal line pattern 230 formed in the insulating layer 210 .

The insulating layer 210 may include a plurality of insulating layers stacked in one direction, and the metal line pattern 230 may include a plurality of patterns formed in the stacked insulating layers.

In the following drawings, a direction in which a plurality of insulating layers are stacked may be understood as a Z-axis direction, and an X-axis direction and a Y-axis direction may be understood as directions perpendicular to each other in a plane having the Z-axis direction as a normal vector. there is. That is, the X-axis direction and the Y-axis direction indicate directions parallel to the upper or lower surface of the metal wire structure 200, and the X-axis direction and the Y-axis direction may be directions perpendicular to each other. The Z-axis direction may represent a direction perpendicular to the top or bottom surface of the metal wire structure 200, that is, a direction perpendicular to the X-Y plane. Also, in the following drawings, the first horizontal direction, the second horizontal direction, and the vertical direction may be understood as follows. A first horizontal direction may be understood as an X-axis direction, a second horizontal direction may be understood as a Y-axis direction, and a vertical direction may be understood as a Z-axis direction.

The metal line structure 200 may electrically connect the micro device structure 100 and external connection terminals through the metal line pattern 230 formed in the insulating layers 210 stacked in the vertical direction (Z). The metal line pattern 230 may be provided in the insulating layer 210 and may be formed to penetrate the metal line structure 200 from the upper surface to the lower surface of the metal wire structure 200 to serve as an electrical connection passage.

The metal line patterns 230 may include redistribution line patterns each extending in a horizontal direction within the stacked insulating layers 210 and metal via patterns electrically connecting the redistribution line patterns. The re-metal via patterns may penetrate the insulating layer 210 in the vertical direction (Z) to electrically connect redistribution line patterns respectively provided in the vertically adjacent insulating layers 210 .

In some embodiments, the re-metal via patterns may have a tapered shape in which a horizontal width is widened and extended from a lower side to an upper side. For example, the horizontal width of the plurality of re-metal via patterns may increase as they approach the micro device structure 100 . In some embodiments, at least some of the plurality of redistribution line patterns may be integrally formed with some of the plurality of redistribution via patterns.

According to example embodiments, the insulating layer 210 may be formed of photo imageable dielectric (PID) or photosensitive polyimide (PSPI). According to example embodiments, the metal line pattern 230 may include copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), indium (In), molybdenum (Mo), manganese Metals or metal alloys such as (Mn), Cobalt (Co), Tin (Sn), Nickel (Ni), Magnesium (Mg), Rhenium (Re), Beryllium (Be), Gallium (Ga), Ruthenium (Ru), etc. It may be, but is not limited to these. In some embodiments, the metal line pattern 230 may be formed by depositing a metal or metal alloy on a seed layer including copper, titanium, titanium nitride, or titanium tungsten.

The non-protruding connection part 250 may be formed on the lower surface of the metal wire structure 200 . The non-protruding connection portion 250 may be a metal line pattern formed on the lower surface of the metal line structure 200 among the metal line patterns 230 and exposed from the insulating layer 210 . A plurality of non-protruding connectors 250 may be provided. The non-protruding connection part 250 may be electrically connected to an external connection terminal.

The non-protruding connection part 250 may be electrically connected to the metal line pattern 230 . The non-protruding connection portion 250 may be formed to enter upward in the vertical direction (Z) from the lower surface of the metal wire structure 200 . That is, the level along the vertical direction Z of the lower surface of the non-protruding connection part 250 may be higher than the level along the vertical direction Z of the lower surface of the metal wire structure 200 . In addition, since the lower surface of the metal wire structure 200 is the same as that of the lowermost insulating layer 210, the lower surface of the non-protruding connection portion 250 is higher than the lower surface of the insulating layer 210 positioned at the lowermost level of the metal wire structure 200. It may have a vertical direction (Z) level.

The micro device structure 100 may be positioned on the upper surface of the metal line structure 200 . According to example embodiments, the micro device package 10 may further include a molding body covering a top surface of the metal line structure 200 and side and top surfaces of the micro device structure 100 . The molded body is formed from a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, or a resin containing a reinforcing material such as an inorganic filler therein, specifically ABF (Ajinomoto Build-up Film), FR-4, BT, etc. It may be, but is not limited thereto, and the molded body may be formed from a molding material such as EMC or a photosensitive material such as photoimagable encapsulant (PIE). In some embodiments, a portion of the molded body may be made of an insulating material such as a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer.

In example embodiments, an underfill material layer covering chip connection bumps may be disposed between the micro device structure 100 and the metal line structure 200 . The underfill material layer may be formed of, for example, an epoxy resin formed by a capillary under-fill method. However, in some exemplary embodiments, a molding layer may directly fill a gap between the micro device structure 100 and the metal line structure 200 through a molded under-fill process. In this case, the underfill material layer may be omitted.

The micro device structure 100 may be mounted on the upper surface of the metal line structure 200 . The micro device structure 100 may include a memory chip or a logic chip.

The memory chip is, for example, a volatile memory chip such as DRAM (Dynamic Random Access Memory) or SRAM (Static Random Access Memory), PRAM (Phase-change Random Access Memory), MRAM (Magnetoresistive Random Access Memory), FeRAM ( It may be a non-volatile memory chip such as Ferroelectric Random Access Memory) or Resistive Random Access Memory (RRAM). The logic chip may be, for example, a microprocessor such as a central processing unit (CPU), a graphic processing unit (GPU), or an application processor (AP), an analog device, or a digital signal. It may be a processor (digital signal processor).

The micro device structure 100 may include a micro device body 110 and a device layer 130 . The micro device body 110 may have an active surface 110a and an inactive surface 110b opposite to the active surface 110a, and the micro device structure 100 is mounted on the metal wire structure 200 in a flip chip method. In this case, the active surface 110a may face the metal line structure 200 .

The micro device body 110 may include silicon (Si), for example, crystalline silicon, polycrystalline silicon, or amorphous silicon. Alternatively, the micro device body 110 may be made of a micro device element such as germanium (Ge) or a compound micro such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP). may contain elements. Meanwhile, the micro device body 110 may have a silicon on insulator (SOI) structure. For example, the micro device body 110 may include a buried oxide layer (BOX layer). The micro device body 110 may include a conductive region, for example, a well doped with impurities or a structure doped with impurities. In addition, the micro device body 110 may have various device isolation structures such as a shallow trench isolation (STI) structure.

The device layer 130 may be formed on the active surface 110a of the micro device body 110 . The device layer 130 may include a plurality of micro devices and an interlayer insulating layer covering the devices. The micro devices may include, for example, switching devices such as transistors.

The body connector 150 may be configured to electrically connect the plurality of micro devices formed in the device layer 130 and the metal line pattern 230 of the metal line structure 200 . A plurality of body connection parts 150 may be provided.

The shielding film 500 may cover the upper and side surfaces of the micro device structure 100 and at least a portion of the side surface of the metal line structure 200 . According to example embodiments, the shielding film 500 covers the top and side surfaces of the micro device structure 100, covers a portion of the side surface of the metal wire structure 200, and does not cover a lower portion of the side surface of the metal wire structure 200. may not be That is, the shielding film 500 may cover the micro device structure 100 and the metal wire structure 200 without covering the lower portion of the side surface of the metal wire structure 200 . Accordingly, the shielding film 500 may be disposed at a level higher than the level of the lower surface of the metal wire structure 200 along the vertical direction Z. Specifically, the lowermost part of the shielding film 500 covering the side surface of the metal wire structure 200 may have a higher level in the vertical direction (Z) than the lower surface of the metal wire structure 200 . Accordingly, a gap D1 may exist between the lower surface of the metal wire structure 200 and the lowermost end of the portion of the shielding film 500 covering the side surface of the metal wire structure 200 as shown in FIG. 2 .

The distance D1 may be substantially equal to the thickness of a portion exposed by the shielding film 500 on the side of the metal wire structure 200 along the vertical direction Z.

The interval D1 is an interval generated in the process of forming the shielding layer 500 and may be uniformly formed throughout the shielding layer 500 . That is, the lowermost part of the shielding film 500 covering the side surface of the metal wire structure 200 may be formed with a uniform height along the side surface of the metal wire structure 200 .

Also, as will be described later, when the shielding film 500 is simultaneously formed on the plurality of micro device packages 10, the distance D1 of each of the plurality of micro device packages 10 may be substantially the same. This is because the magnetic tape 350 provided on the ring frame 300 and the plurality of micro device packages 10 provided on the magnetic tape 350 using the magnetic chuck 400 can have uniform flatness. Because.

According to exemplary embodiments, the distance D1 may not exceed 10 μm. That is, the thickness along the vertical direction (Z) of the portion exposed by the shielding film 500 on the side of the metal wire structure 200 may not exceed 10 μm. Similarly, as will be described later, this means that the magnetic tape 350 provided on the ring frame 300 and the micro device package 10 provided on the magnetic tape 350 using the magnetic chuck 400 have uniform flatness. because you can have

The shielding film 500 may be configured to shield EMI (Electro Magnetic Interference). The shielding film 500 may include a conductive material including at least one selected from the group consisting of metals and ceramics, and specifically made of copper (Cu), gold (Au), silver (Ag), and titanium (Ti). It may include any one or more selected from the group consisting of.

In addition, the shielding film 500 may include a conductive resin. The conductive resin may be formed of a combination in which one or more of aluminum, ceramic, or silicon is added to a carbon-based resin.

3 is a schematic diagram schematically illustrating an apparatus for manufacturing a micro device package according to example embodiments. Hereinafter, duplicate contents of the micro device package 10 of FIG. 1 and the micro device package manufacturing apparatus 20 of FIG. 3 will be omitted and the differences will be mainly described.

Referring to FIG. 3 , the micro device package manufacturing apparatus 20 includes a micro device structure 100, a metal wire structure 200, a shielding film 500, a magnetic tape 350, a magnetic chuck 400, and a ring frame 300. ) may be included.

The metal line structure 200 may be disposed under the micro device structure 100 and electrically connect the micro device structure 100 to an external connection terminal. Also, the metal wire structure 200 may be disposed on the upper surface of the magnetic tape 350 . While the metal wire structure 200 is disposed on the upper surface of the magnetic tape 350, the lower surface of the metal wire structure 200 may be attached to the upper surface of the magnetic tape 350 by the viscosity of the magnetic tape 350. The metal line structure 200 may include an insulating layer 210 and a metal line pattern 230 formed in the insulating layer 210 .

The micro device structure 100 may be disposed on the upper surface of the metal line structure 200 . The micro device structure 100 may be a memory chip or a logic chip, and may include a micro device body 110 and a device layer 130 .

The magnetic tape 350 may be disposed on the ring frame 300 . The magnetic tape 350 may be configured to attach the micro device package 10 disposed on the upper surface of the magnetic tape 350 . According to example embodiments, the magnetic tape 350 may be provided by coating a conductive adhesive on a conductive fiber or metal foil. The footprint of the magnetic tape 350 may be larger than that of the micro device package 10 .

The ring frame 300 may be configured to support the magnetic tape 350 . The ring frame 300 may be configured to support an outer portion of the magnetic tape 350 . The ring frame 300 may have a donut shape. That is, when viewed in the vertical direction (Z), the ring frame 300 may have a circular shape and have a circular hole having a smaller diameter than the circular hole inside.

The magnetic tape 350 may be fixed on the ring frame 300 . At this time, the magnetic tape 350 may be disposed on the ring frame 300 in a flattened state.

The magnetic chuck 400 may be positioned in an opening of the ring frame 300, that is, a donut-shaped hole, and support the magnetic tape 350. That is, the magnetic chuck 400 may be inserted into the hole of the ring frame 300 to support the magnetic tape 350 .

The magnetic chuck 400 may have magnetism. The magnetic chuck 400 may generate a magnetic field in the range of 1000 Gauss to 1800 Gauss. When the magnetic chuck 400 generates a magnetic field within the above range, the magnetic tape 350 disposed on the magnetic chuck 400 may be evenly spread without bending. That is, the magnetic tape 350 may be spread flat on the magnetic chuck 400 by the magnetic chuck 400 generating a magnetic field having a range of 1000 Gauss to 1800 Gauss. The magnetic chuck 400 may have a cylindrical shape. An upper surface of the magnetic chuck 400 may have a flat shape. Due to the magnetism of the magnetic chuck 400 , the magnetic tape 350 may be placed on the magnetic chuck 400 in a flattened state. That is, the magnetic tape 350 may be uniformly attached along the upper surface of the magnetic chuck 400 by magnetism. Therefore, air bubbles generated between the magnetic tape 350 and the magnetic chuck 400 may not be generated, and the magnetic tape 350 may have a uniform flatness.

Accordingly, at least one micro device package 10 disposed on the magnetic tape 350 may also be disposed with uniform flatness. In addition, the shielding film 500 formed after the micro device package 10 is disposed on the magnetic tape 350 may also be formed uniformly, and ultimately, the upper surface of the shielding film 500 and the magnetic tape 350 may be uniform. It may have an interval (D1).

In addition, even when the plurality of micro device packages 10 are disposed on the magnetic tape 350 to form the shielding film 500, the plurality of micro device packages 10 have uniform flatness and the magnetic tape (350). Accordingly, the gaps D1 formed in each of the plurality of micro device packages 10 may be formed identically to each other.

4 is a flowchart illustrating a method of manufacturing a micro device package according to example embodiments. 5 to 12 are drawings for explaining a method of manufacturing the micro device package of FIG. 1 .

A method of manufacturing a micro device package will be described with reference to FIGS. 4 to 12 . Contents overlapping those described with reference to FIGS. 1 to 3 will be omitted.

Referring to FIGS. 4 and 6 , dicing of the wafer W is performed in step S110 . The plurality of device layers 130 formed on the wafer W may be spaced apart by a predetermined distance by scribe lanes. A device layer may not be formed in the scribe lane. When the wafer W is cut into a plurality of micro device packages 11, 13, 15, and 17, a virtual cutting line L may be formed on a scribe lane.

Cutting of the wafer W may be performed by, for example, a cutting device using a cutting blade or a stealth laser cutting device using laser light for cutting. However, it is not limited thereto and more various cutting devices may be used.

By cutting the wafer W, the wafer W may be cut into a plurality of micro device packages 11, 13, 15, and 17 as shown in FIG. 6 . Each of the plurality of micro device packages 11 , 13 , 15 , and 17 may have the same configuration as the micro device package 10 (see FIG. 1 ) described with reference to FIG. 1 .

4, 7, and 8, in step S120, a magnetic tape is placed on the ring frame. The ring frame 300 may have a donut shape as shown in FIG. 8 . A magnetic tape 350 may be disposed on the ring frame 300 . The magnetic tape 350 may be disposed on the ring frame 300 in a ring flat state. That is, the magnetic tape 350 may be disposed on the ring frame 300 in a maximally spread state.

Referring to FIGS. 4 and 9 , the micro device package diced in step S130 is attached to the upper surface of the magnetic tape. According to example embodiments, a plurality of micro device packages 11 , 13 , 15 , and 17 may be attached on the magnetic tape 350 . Due to the viscosity of the magnetic tape 350 , the plurality of micro device packages 11 , 13 , 15 , and 17 may be attached to the magnetic tape 350 . The plurality of micro device packages 11, 13, 15, and 17 may be spaced apart from each other at predetermined intervals along the first horizontal direction X. That is, the plurality of micro device packages 11 , 13 , 15 , and 17 may be attached to the magnetic tape 350 while being spaced apart from each other at predetermined intervals.

According to example embodiments, the plurality of micro device packages 11, 13, 15, and 17 may be attached on the magnetic tape 350 so that non-protruding connections formed on the metal wire structure face the magnetic tape 350. there is. Also, according to exemplary embodiments, the micro device packages 11, 13, 15, and 17 may be micro device structures that do not include a metal line structure. Accordingly, the device layer of the micro device structure may be disposed on the magnetic tape 350 so as to face the magnetic tape 350 .

4 and 10, in step S140, a magnetic chuck is provided on the lower surface of the magnetic tape. The magnetic chuck 400 may be disposed to support the lower surface of the magnetic tape 350 while being inserted into the hole of the ring frame 300 . The magnetic tape 350 may be attached to the magnetic chuck 400 in a flat state due to magnetism between the magnetic chuck 400 and the magnetic tape 350 . In addition, the micro device packages 11 , 13 , 15 , and 17 disposed on the upper surface of the magnetic tape 350 may also be attached to the magnetic tape 350 in a flat state. Accordingly, a gap may not be generated between the micro device packages 11 , 13 , 15 , and 17 and the magnetic tape 350 .

When the magnetic chuck 400 is provided on the lower surface of the magnetic tape 350, vacuum suction may be used, but is not limited thereto, and may be provided on the lower surface of the magnetic tape 350 using only magnetism.

Referring to FIGS. 4 and 11 , in step S140, a shielding film is formed on the micro device package. According to example embodiments, the shielding film 500 may be formed for the plurality of micro device packages 11, 13, 15, and 17 attached on the magnetic tape 350.

For forming the shielding film, a method such as chemical vapor deposition, electroless plating, electrolytic plating, spraying, or sputtering may be used. According to example embodiments, the shielding layer 500 may include a conductive material such as copper (Cu), silver (Ag), or platinum (Pt). The shielding layer 500 may prevent performance degradation of the micro device package due to EMI.

The shielding film 500 formed on the plurality of micro device packages 11, 13, 15, and 17 may be integrally formed. For example, as shown in FIG. 11 , it may be formed on the plurality of micro device packages 11, 13, 15, and 17 without interruption while having a predetermined thickness.

Thus, the shielding film 500 may cover both the upper and side surfaces of the micro device structure and the entire side surface of the metal line structure. Furthermore, the shielding film 500 may cover up to the upper surface of the magnetic tape 350 .

Referring to FIGS. 4 and 12 , in step S150, the micro device package is separated from the magnetic tape. At this time, while the micro device packages 11 , 13 , 15 , and 17 are separated from the magnetic tape 350 , a portion of the shielding film 500 may be separated. That is, a part of the shielding film 500 may remain on the magnetic tape 350 during the separation process of the micro device packages 11 , 13 , 15 , and 17 . Accordingly, during the separation process of the shielding film 500 , portions of the side surfaces of the micro device packages 11 , 13 , 15 , and 17 may be exposed from the shielding film 500 . That is, the interval D1 described with reference to FIGS. 1 to 3 may be formed.

The micro device packages 11 , 13 , 15 , and 17 having a certain flatness by the magnetic tape 350 and the magnetic chuck 400 may have uniform intervals despite the separation process. The uniform interval may mean a vertical direction (Z) interval from one micro device package 11 , 13 , 15 , or 17 to the magnetic tape 350 formed along the circumference of the micro device package. In addition, the interval D1 formed in all of the plurality of micro device packages 11, 13, 15, and 17 may also be formed uniformly. That is, the gap D1 formed in each of the micro device packages 11, 13, 15, and 17 may not have a large error.

As above, exemplary embodiments have been disclosed in the drawings and specifications. Embodiments have been described using specific terms in this specification, but they are only used for the purpose of explaining the technical spirit of the present disclosure, and are not used to limit the scope of the present disclosure described in the meaning or claims. Therefore, those of ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical scope of protection of the present disclosure should be determined by the technical spirit of the appended claims.

W: wafer, 10, 11, 13, 15, 17: micro device package, 20: micro device package manufacturing device, 100: micro device structure, 110: micro device body, 130: device layer, 150: body connection portion, 200: 210: insulating layer, 230: metal wire pattern, 250: non-protruding connection part, 300: ring frame, 350: magnetic tape, 400: magnetic chuck, 500: shielding film,

Claims (11)

a metal line structure including an insulating layer and a metal line pattern disposed in the insulating layer;
a micro device structure having an active surface and an inactive surface opposite to the active surface and located on the upper surface of the metal wire structure; and
A shielding film covering upper and side surfaces of the micro device structure and surrounding at least a portion of the side surface of the metal wire structure;
A side surface of the metal line structure is partially exposed by the shielding film, and a thickness of the exposed side surface in a vertical direction is uniform. According to claim 1,
A thickness along a vertical direction of a side surface of the metal line structure exposed by the shielding film is uniform within an error range, and a thickness along the vertical direction does not exceed 10 μm. According to claim 1,
The metal line structure further includes a non-protruding connection portion electrically connected to the metal line pattern and exposed downward from the insulating layer;
The micro device package, characterized in that the level along the vertical direction of the lower surface of the non-protruding connection portion is higher than the level along the vertical direction of the lower surface of the metal wire structure. A ring frame having a donut shape;
a magnetic tape disposed on the ring frame;
a magnetic chuck disposed on a lower surface of the magnetic tape;
a metal wire structure attached to an upper surface of the magnetic tape;
a micro device structure mounted on the metal line structure; and
A shielding film covering the metal wire structure and the micro device structure;
The micro device package manufacturing apparatus, characterized in that the shielding film is formed spaced apart from the upper surface of the magnetic tape at a predetermined interval in a vertical direction. According to claim 4,
The micro device package manufacturing apparatus, characterized in that the magnetic tape is uniformly stretched by the magnetic force between the magnetic tape and the magnetic chuck. According to claim 4,
The metal line structure further includes a non-protruding connection portion electrically connected to the metal line pattern and exposed downward from the insulating layer;
The micro device package manufacturing apparatus, characterized in that the level along the vertical direction of the lower surface of the non-protruding connection portion is higher than the level along the vertical direction of the lower surface of the metal wire structure. According to claim 4,
The micro device package manufacturing apparatus of claim 1, wherein a distance at which the lowermost end of the shielding film surrounding the side surface of the metal wire structure is separated from the upper surface of the magnetic tape does not exceed 10 μm. According to claim 4,
The micro device structure is mounted on the metal line structure so that the device layer faces the metal line structure;
The metal line structure includes an insulating layer, a metal line pattern disposed in the insulating layer, and a non-protruding connection portion electrically connected to the metal line pattern,
The micro device package manufacturing apparatus, characterized in that the level along the vertical direction of the lower surface of the non-protruding connection portion is higher than the level along the vertical direction of the lower surface of the metal wire structure. dicing the wafer;
placing a magnetic tape on the ring frame;
attaching a plurality of diced micro device structures on an upper surface of the magnetic tape;
providing a magnetic chuck on the lower surface of the magnetic tape;
forming a shielding film on the micro device structures; and
and separating the micro device structures on which the shielding film is formed from the magnetic tape. According to claim 9,
In the step of providing the magnetic chuck on the lower surface of the magnetic tape, the magnetic tape is uniformly stretched by a magnetic force generated between the magnetic tape and the magnetic chuck. According to claim 9,
In the step of separating the micro device structures on which the shielding film is formed from the magnetic tape, each of the micro device structures has a vertical thickness of a side surface of a metal line structure exposed by the shielding film not exceeding 10 μm. A method for manufacturing a micro device package.

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