KR20230077869A - Micro Bump Array - Google Patents

Abstract

The present invention provides a micro bump array that can more effectively transport micro bumps that can accommodate narrow pitches between terminals and prevent an increase in current density and thermal energy density in a bump connection part. According to the present invention, the micro bump array includes: a plurality of micro bumps; and a support member.

Description

Micro bump array {Micro Bump Array}

The present invention relates to a micro bump array.

Compared to the wire bonding method, the conventional flip chip bonding method using solder bumps minimizes the length of the connection between the chip and the board, so it has excellent electrical performance, can increase the degree of integration of input/output terminals, and can reduce the heat dissipation path. It has been generally used because it has the advantage of dissipating internal heat to the outside more quickly.

In recent semiconductor chips, one chip performs various functions and processing speed gradually increases, while the number of input/output terminals inevitably increases and the pitch gradually decreases.

As the pitch between terminals decreases, the pitch interval between solder bumps naturally narrows. However, in the case of a method using a conventional solder bump, a problem arises in that the possibility of shorting with an adjacent solder bump increases when the solder bump melts. To solve this problem, reducing the size of the solder bump may be considered. However, as the size of the solder bump decreases, the distance between the chip and the board becomes too short, so the difficulty of the underfill process increases. As the distance between the chip and the board decreases, parasitic capacitance significantly increases in the high frequency band. . In addition, as the size of the solder bump decreases, current density and thermal energy density increase at the bump connection portion.

Meanwhile, micro LED displays are emerging as another next-generation display. While the core materials of LCD and OLED are liquid crystal and organic materials, respectively, micro LED display is a display that uses 1-100 micrometer (㎛) LED chip itself as a light emitting material. Since the micro LED has a terminal size and pitch interval in micrometers (㎛), the above-mentioned problems are also encountered in bonding these micro LEDs to a board (circuit board) using the conventional solder bump method. the same will happen

Meanwhile, as the size of the bumps decreases, a technology capable of more effectively transferring numerous bumps is also required.

Republic of Korea Registration No. 10-1610326 Registered Patent Publication

The present invention has been made to solve the above problems, and the present invention is capable of responding to a narrow pitch between terminals, while preventing an increase in current density and thermal energy density at the bump connection, and can more effectively transfer micro bumps. It aims to provide a micro bump array.

In order to achieve the above object, a micro bump array according to the present invention includes a plurality of micro bumps including an electrically conductive material portion; and a support member supporting the plurality of micro bumps.

In addition, a plurality of micro trenches are provided on side surfaces of the micro bumps.

In addition, the micro trench is provided entirely along the circumference of the side surface of the micro bump.

In addition, the electrically conductive material part includes at least one of Cu, Al, W, Au, Ag, Mo, Ta, or an alloy including these materials.

In addition, a body made of an anodic oxide film is provided on the upper surface of the support member, and the micro bumps are provided inside through holes of the body made of an anodic oxide film.

In addition, a metal layer provided between the micro bumps and the support member is included, and a plurality of the micro bumps are connected to the metal layer.

In addition, a separation space is provided between the micro bump and the through hole.

In addition, the micro-bumps include a bonding material portion provided on at least a part of an upper portion and a lower portion of the electrically conductive material portion.

In addition, the bonding material part includes at least one of Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn, or an alloy containing Sn.

In addition, the support member is a flexible film.

In addition, the support member is a blue tape or a UV tape.

The present invention provides a micro bump array capable of more effectively transferring micro bumps, capable of responding to a narrow pitch between terminals, and preventing an increase in current density and thermal energy density at bump connections.

1 is a diagram showing a micro bump array according to a first preferred embodiment of the present invention;
2 is a diagram showing micro bumps constituting a micro bump array according to first preferred embodiments of the present invention;
3 is a view for explaining a method of manufacturing a micro bump array according to a first preferred embodiment of the present invention;
4 is a diagram showing a micro bump array according to a second preferred embodiment of the present invention.
5 is a diagram for explaining a method of manufacturing a micro bump array according to a second preferred embodiment of the present invention.
6 is a diagram showing a micro bump array according to a third preferred embodiment of the present invention.
7 is a view for explaining a method of manufacturing a micro bump array according to a third preferred embodiment of the present invention.
8 is a diagram showing a micro bump array according to a fourth preferred embodiment of the present invention.
9 is a view for explaining a method of manufacturing a micro bump array according to a fourth preferred embodiment of the present invention.
10 is a view showing a modified example of micro bumps constituting a micro bump array according to preferred embodiments of the present invention.
11 is a view showing a modified example of micro bumps constituting a micro bump array according to preferred embodiments of the present invention;

The following merely illustrates the principles of the invention. Therefore, those skilled in the art can invent various devices that embody the principles of the invention and fall within the concept and scope of the invention, even though not explicitly described or shown herein. In addition, it should be understood that all conditional terms and embodiments listed in this specification are, in principle, expressly intended only for the purpose of making the concept of the invention understood, and are not limited to such specifically listed embodiments and conditions. .

The above objects, features and advantages will become more apparent through the following detailed description in conjunction with the accompanying drawings, and accordingly, those skilled in the art to which the invention belongs will be able to easily implement the technical idea of the invention. .

Embodiments described in this specification will be described with reference to sectional views and/or perspective views, which are ideal exemplary views of the present invention. Films and thicknesses of regions shown in these drawings are exaggerated for effective description of technical content. The shape of the illustrative drawings may be modified due to manufacturing techniques and/or tolerances. Also, only a part of the number of micro bumps shown in the drawing is illustratively shown in the drawing. Therefore, embodiments of the present invention are not limited to the specific shapes shown, but also include changes in shapes generated according to manufacturing processes. Technical terms used in this specification are used only to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "comprise" or "comprise" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in this specification, but one or more other It should be understood that it does not preclude the possibility of addition or existence of features, numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of various embodiments, the same names and the same reference numbers will be given to components performing the same functions even if the embodiments are different. In addition, configurations and operations already described in other embodiments will be omitted for convenience.

Example 1

Hereinafter, a micro bump array according to a first preferred embodiment of the present invention will be described with reference to FIGS. 1 to 3 .

1 is a diagram showing a micro bump array according to a first preferred embodiment of the present invention, and FIG. 2 is a diagram showing micro bumps constituting the micro bump array according to a first preferred embodiment of the present invention. 3 is a diagram for explaining a method of manufacturing a micro bump array according to a first preferred embodiment of the present invention.

The micro bump array according to the first embodiment includes a plurality of micro bumps 150 and a support member 200 supporting the plurality of micro bumps 150 .

The micro bump array can easily separate the micro bumps 150 from the support member 200 when the micro bumps 150 are mounted while maintaining alignment of the micro bumps 150 until the process step for mounting the micro bumps 150 . let it be

A plurality of micro bumps 150 are attached to the support member 200 . The micro bumps 150 are supported by the support member 200 and can be transported while being attached to the support member 200 , and the micro bumps 150 can be separated from the support member 200 by an external force.

The support member 200 may be a flexible film. Alternatively, the support member 200 may be blue tape or UV tape. However, it is not limited thereto.

The micro bump array shown in FIG. 1A includes a metal layer 300 provided between the micro bumps 150 and the support member 200 . The metal layer 300 is formed to a thickness of 0.01 μm or more and 1 μm or less. The metal layer 300 may be formed of a single layer of titanium (Ti), copper (Cu), or nickel (Ni) or a plurality of layers thereof.

In the micro bump array shown in FIG. 1B , the micro bumps 150 are directly attached to the support member 200 without a separate metal layer 300 between the micro bumps 150 and the support member 200 .

The micro bumps 150 include electrically conductive material portions 130 .

The electrically conductive material portion 130 is made of at least one of Cu, Al, W, Au, Ag, Mo, Ta, or an alloy containing these materials. For example, the electrically conductive material portion 130 may be made of copper (Cu) or an alloy material containing copper (Cu) as a main component.

The micro bumps 150 may have a cylindrical shape. However, the shape of the micro bumps 150 is not limited thereto. The micro bumps 150 may have various shapes including polygonal pillars.

The micro bumps 150 have a height of 70 μm or more and 200 μm or less. In addition, the micro bumps 150 have a diameter of 10 μm or more and 200 μm or less. Of course, these figures are only examples, and the micro bumps 150 may be formed with smaller figures.

Due to the relative thickness difference between the micro-bumps 150 and the metal layer 300, when the micro-bumps 150 are separated from the supporting member 200, the metal layer 300 is easily removed even if the metal layer 300 is interposed therebetween. By breaking, the micro bumps 150 can be easily separated from the support member 200 .

A micro trench 155 is provided on a side surface of the micro bump 150 .

The micro trench 155 is formed on the outer circumferential surface of the micro bump 150 . The fine trenches 155 are formed in the form of grooves extending from the side surfaces of the micro bumps 150 in a height direction of the micro bumps 150 .

More specifically, a plurality of micro trenches 155 are provided on the side surface of the electrically conductive material portion 130 . The fine trench 155 is provided along the entire circumference of the side surface of the electrically conductive material portion.

The fine trenches 155 are provided on all sides of the electrically conductive material portion 130 .

The fine trench 155 has a depth of 20 nm or more and 1 μm or less, and a width of 20 nm or more and 1 μm or less. Here, since the fine trench 155 is due to the pores formed during the manufacture of the body 110 made of anodized film, the width and depth of the fine trench 155 are values less than or equal to the diameter of the pores formed in the body 110. have On the other hand, in the process of forming the through hole 123 in the body 110, some of the pores of the body 110 are crushed together by the etching solution, and have a depth greater than the range of diameters of the pores formed during anodization. At least a portion of the fine trench 155 may be formed.

Since the body 110 includes numerous pores, at least a portion of the body 110 is etched to form the through hole 123, and the electrically conductive material portion 130 is formed inside the through hole 123, thus forming a micro bump. A fine trench 155 formed while contacting the pores of the body 110 is provided on the side surface of the surface 150 .

Since the fine trenches 155 as described above have a wrinkled shape in which peaks and valleys are repeated with a depth of 20 nm or more and 1 μm or less in the circumferential direction, it has an effect of increasing the surface area on the side surface of the micro bumps 150. In other words, even though the micro bumps 150 according to an exemplary embodiment of the present invention have the same shape and dimensions as conventional bumps, the surface area on the side of the micro bumps 150 can be increased through the configuration of the micro trenches 155. you can make it big Through the configuration of the micro trenches 155 formed on the side surfaces of the micro bumps 150, the surface area through which the current flows is increased according to the skin effect, so that the density of the current flowing along the micro bumps 150 is increased, thereby increasing the micro-bumps 150. Electrical characteristics of the bump 150 may be improved. In addition, since heat generated in the micro bumps 150 can be rapidly released through the configuration of the micro trenches 155 , a rise in temperature of the micro bumps 150 can be suppressed.

Hereinafter, a method of manufacturing a micro bump array according to a first preferred embodiment of the present invention will be described with reference to FIG. 3 .

The method of manufacturing the micro bump 150 array includes a step of forming the electrically conductive material portion 130 in the through hole 123 provided in the body 110 made of anodized film.

First, referring to FIG. 3A , a body 110 made of an anodic oxide film is prepared. The body 110 made of an anodic oxide film is manufactured by anodizing the base metal and then removing the base metal. The anodic oxide film means a film formed by anodic oxidation of a base metal, and the pore means a hole formed in the process of forming an anodic oxide film by anodic oxidation of a metal. For example, when the base metal is aluminum (Al) or an aluminum alloy, when the base metal is anodized, an anodized film made of aluminum oxide (Al ₂ O ₃ ) is formed on the surface of the base metal. However, the base metal is not limited thereto, and includes Ta, Nb, Ti, Zr, Hf, Zn, W, Sb or an alloy thereof. The anodic oxide film formed as above is a barrier with no pores formed therein in the vertical direction It is divided into a layer and a porous layer in which pores are formed. In the base material on which the anodic oxide film having the barrier layer and the porous layer is formed, when the base material is removed, only the anodic oxide film made of aluminum oxide (Al ₂ O ₃ ) remains. The anodic oxidation film may be formed in a structure in which the barrier layer formed during anodic oxidation is removed to pass through the upper and lower pores, or in a structure in which the barrier layer formed during anodic oxidation remains as it is and seals one end of the upper and lower portions of the pores.

The anodic oxide film has a thermal expansion coefficient of 2 to 3 ppm/°C. Due to this, when exposed to a high temperature environment, thermal deformation due to temperature is small. Accordingly, even in a high-temperature environment for manufacturing the micro-bumps 150 , precise micro-bumps 150 may be manufactured without thermal deformation.

Next, referring to FIG. 3B , a metal layer 300 is provided under the body 110 made of an anodic oxide film. The metal layer 300 is provided on one surface of the body 110 by a deposition method. The metal layer 300 is formed to improve plating characteristics during electroplating. The metal layer 300 is formed to a thickness of 0.01 μm or more and 1 μm or less. The metal layer 300 may be formed of a single layer of titanium (Ti), copper (Cu), or nickel (Ni) or a plurality of layers thereof.

Next, referring to FIG. 3C , a UV tape 401 is attached to the lower portion of the metal layer 300 and the carrier substrate 402 is coupled.

Next, referring to FIG. 3D , a step of forming a plurality of through holes 123 in the body 110 is performed.

The body 110 has a through hole 123 having a larger width than the width of the pore separately from the pore. The through hole 123 may be formed with a width of several μm or more to several hundred μm or less. The through hole 123 may be provided by an etching process. Since the through-hole 123 can form a plurality of through-holes 123 at once in a single etching process using an etching solution (eg, an alkaline solution) that reacts wet to the anodic oxide film, one via hole is formed at a time. It is advantageous in terms of production speed and manufacturing cost compared to

The through hole 123 may be formed by forming a photoresist (not shown) on one surface of the body 110, patterning the photoresist to form an opening area, and then flowing an etching solution through the opening area. Accordingly, the cross-sectional shape of the through hole 123 is manufactured by copying the shape of the patterned opening area as it is.

Since the through hole 123 is formed using an etching process using a patterned photoresist (not shown) as a mask, there is no restriction on the cross-sectional shape of the through hole 123 and the through hole is formed by reacting the anodic oxide film with the etching solution. The inner wall of the hole 123 forms a vertical inner wall.

The through hole 123 may have a circular cross section.

Next, referring to FIG. 3E , a step of forming the electrically conductive material portion 130 by electroplating using the metal layer 300 is performed. Through this, the electrically conductive material portion 130 is formed inside the through hole 123 of the body 110 .

Next, referring to FIG. 3F , the electrically conductive material portion 130 present on the upper surface of the body 110 made of anodized film is removed through a chemical mechanical polishing (CMP) process.

Next, referring to FIG. 3G , the body 110 made of the anodic oxide film is removed.

Next, referring to FIG. 3H , a temporary film 403 is attached to the top of the micro bumps 150 . The temporary film 403 is a low-adhesive film for supporting the micro bumps 150 when the support member 200 is coupled thereto.

Next, referring to FIG. 3I , the UV tape 401 is removed together with the carrier substrate 402 by weakening the adhesive force of the UV tape 401 .

Next, referring to FIG. 3J , the support member 200 is attached to the lower portion of the metal layer 300 . A plurality of micro bumps 150 are attached to the support member 200 . The micro bumps 150 are supported by the support member 200 and can be transported while being attached to the support member 200 , and the micro bumps 150 can be separated from the support member 200 by an external force. The support member 200 may be a flexible film. Alternatively, the support member 200 may be blue tape. However, it is not limited thereto.

Meanwhile, the micro bump array may be formed with the metal layer 300 remaining, or the micro bump array may be formed without the metal layer 300 by being removed at any of the above process steps.

An electrically conductive material portion 130 is filled in the through hole 123 having a vertical inner wall to form a micro bump 150 formed in a columnar shape. Since the pillar-shaped microbumps 150 from the lower surface to the upper surface of the body 110 have the same cross-sectional area, electric flow is smoother than, for example, spherical or conical microbumps whose inner walls do not form a vertical shape. advantage in terms of In the case of micro-bumps in which the inner wall does not form a vertical shape and the cross-sectional area decreases from the bottom to the top or toward the center, a thermal and electrical bottleneck is formed. However, the micro-bump according to the preferred embodiment of the present invention (150) has the same cross-sectional area from the bottom to the top, so it has no bottleneck section thermally and electrically.

The micro bumps 150 may have a circular column shape with a circular cross section. Through this, since it has a larger volume than the conventional ball-shaped solder bump, it has an effect of reducing current density and thermal energy density.

In addition, according to a preferred embodiment of the present invention, since the electrically conductive material portion 130 is formed by a plating process, the height of the micro bump 150 can be limited to the height of the through hole 123, thereby forming a plurality of micro bumps. It is possible to reduce the height deviation of (150).

After the plating process is completed, the electrically conductive material portion 130 may be made more dense by raising the temperature to a high temperature and then applying pressure to pressurize the metal layer on which the plating process is completed. When a photoresist material is used as a mold, a process of raising the temperature to a high temperature and applying pressure cannot be performed because the photoresist exists around the metal layer after the plating process is completed. Unlike this, according to a preferred embodiment of the present invention, since the body 110 made of an anodic oxide film is provided around the electrically conductive material part 130 on which the plating process is completed, even if the temperature is raised to a high temperature, the anodic oxide film has a low thermal expansion coefficient. Due to this, it is possible to densify the electrically conductive material portion 130 while minimizing deformation. Accordingly, it is possible to obtain a higher density electrically conductive material portion 130 than a technique using a photoresist as a mold.

Example 2

Next, look at the second embodiment according to the present invention. However, the embodiments described below will be described focusing on characteristic components compared to the first embodiment, and descriptions of components identical or similar to those of the first embodiment will be omitted if possible.

Hereinafter, a micro bump array according to a second preferred embodiment of the present invention will be described with reference to FIGS. 4 and 5 . 4 is a diagram showing a micro bump array according to a second preferred embodiment of the present invention, and FIG. 5 is a diagram for explaining a method of manufacturing a micro bump array according to a second preferred embodiment of the present invention.

The micro bump array according to the second embodiment is different from the micro bump array according to the first embodiment in that the body 110 is made of an anodic oxide film.

The micro bump array according to the second embodiment includes the body 110 made of an anodic oxide film provided on the upper surface of the support member 200, and the micro bumps 150 are formed through holes of the body 110 made of the anodic oxide film. (123) is provided inside.

A metal layer 300 is provided on the upper surface of the support member 200 , and a micro bump 150 and a body 110 made of an anodic oxide film are provided on the upper surface of the metal layer 300 . The micro bumps 150 can be more stably transported by the body 110 made of an anodic oxide film.

Hereinafter, a method of manufacturing a micro bump array according to a second preferred embodiment of the present invention will be described with reference to FIG. 5 .

First, referring to FIG. 5A , a body 110 made of an anodic oxide film is prepared.

Next, referring to FIG. 5B , a metal layer 300 is provided under the body 110 made of an anodic oxide film.

Next, referring to FIG. 5C , a UV tape 401 is attached to the lower portion of the metal layer 300 and the carrier substrate 402 is coupled.

Next, referring to FIG. 5D , a step of forming a plurality of through holes 123 in the body 110 is performed.

Next, referring to FIG. 5E , a step of forming the electrically conductive material portion 130 by electroplating using the metal layer 300 is performed. Through this, the electrically conductive material portion 130 is formed inside the through hole 123 of the body 110 .

Next, referring to FIG. 5F , the electrically conductive material portion 130 present on the upper surface of the body 110 made of anodized film is removed through a chemical mechanical polishing (CMP) process.

Next, referring to FIG. 5G , the UV tape 401 is removed along with the carrier substrate 402 by weakening the adhesive force of the UV tape 401 .

Next, referring to FIG. 5H , the support member 200 is attached to the lower portion of the metal layer 300 . A plurality of micro bumps 150 are attached to the support member 200 . The micro bumps 150 are supported by the support member 200 and can be transported while being attached to the support member 200 , and the micro bumps 150 can be separated from the support member 200 by an external force. The support member 200 may be a flexible film. Alternatively, the support member 200 may be blue tape. However, it is not limited thereto.

3rd embodiment

Next, look at the third embodiment according to the present invention. However, the embodiments described below will be described focusing on characteristic components compared to the first embodiment, and descriptions of components identical or similar to those of the first embodiment will be omitted if possible.

Hereinafter, a micro bump array according to a third preferred embodiment of the present invention will be described with reference to FIGS. 6 and 7 . 6 is a diagram showing a micro bump array according to a third preferred embodiment of the present invention, and FIG. 7 is a diagram for explaining a method of manufacturing a micro bump array according to a third preferred embodiment of the present invention.

The micro bump array according to the third embodiment is different from the micro bump array according to the first embodiment in that the body 110 is made of an anodic oxide film. In addition, there is a difference from the configuration of the micro bump array according to the second embodiment in that the metal layer 300 is not provided on the upper surface of the support member 200 .

The micro bump array according to the third embodiment includes the body 110 made of an anodic oxide film provided on the upper surface of the support member 200, and the micro bumps 150 are formed through holes of the body 110 made of the anodic oxide film. (123) is provided inside.

Hereinafter, a method of manufacturing a micro bump array according to a third preferred embodiment of the present invention will be described with reference to FIG. 7 .

First, referring to FIG. 7A , a body 110 made of an anodic oxide film is prepared.

Next, referring to FIG. 7B , a metal layer 300 is provided under the body 110 made of an anodic oxide film.

Next, referring to FIG. 7C , a UV tape 401 is attached to the lower portion of the metal layer 300 and the carrier substrate 402 is coupled.

Next, referring to FIG. 7D , a step of forming a plurality of through holes 123 in the body 110 is performed.

Next, referring to FIG. 7E , a step of forming the electrically conductive material portion 130 by electroplating using the metal layer 300 is performed. Through this, the electrically conductive material portion 130 is formed inside the through hole 123 of the body 110 .

Next, referring to FIG. 7F , the electrically conductive material portion 130 present on the upper surface of the body 110 made of anodized film is removed through a chemical mechanical polishing (CMP) process.

Next, referring to FIG. 7G , the UV tape 401 is removed along with the carrier substrate 402 by weakening the adhesive force of the UV tape 401 . In addition, the metal layer 300 is also removed. The metal layer 300 may be removed through a chemical mechanical polishing (CMP) process.

Next, referring to FIG. 7H , the support member 200 is attached. A plurality of micro bumps 150 are attached to the support member 200 . The micro bumps 150 are supported by the support member 200 and can be transported while being attached to the support member 200 , and the micro bumps 150 can be separated from the support member 200 by an external force. The support member 200 may be a flexible film. Alternatively, the support member 200 may be blue tape. However, it is not limited thereto.

Example 4

Next, look at the fourth embodiment according to the present invention. However, the embodiments described below will be described focusing on characteristic components compared to the first embodiment, and descriptions of components identical or similar to those of the first embodiment will be omitted if possible.

Hereinafter, a micro bump array according to a fourth preferred embodiment of the present invention will be described with reference to FIGS. 8 and 9 . 8 is a diagram showing a micro bump array according to a fourth preferred embodiment of the present invention, and FIG. 9 is a diagram for explaining a method of manufacturing a micro bump array according to a fourth preferred embodiment of the present invention.

The micro bump array according to the fourth embodiment is different from the micro bump array according to the first embodiment in that the body 110 is made of an anodic oxide film. In addition, there is a difference from the configuration of the micro bump array according to the second and third embodiments in that the separation space 404 is provided between the micro bumps 150 and the through holes 123.

The micro bump array according to the fourth embodiment includes a body 110 made of an anodic oxide film provided on the upper surface of the support member 200, and the micro bumps 150 are formed through holes of the body 110 made of an anodic oxide film. 123, and at least a part of the micro bump 150 is spaced apart from the sidewall of the through hole 123.

The micro bumps 150 may have a structure that is spaced apart from the sidewall of the through hole 123 over the entire circumference or spaced apart from the sidewall of the through hole 123 around a part of the circumference.

Through the structure in which the micro bumps 150 are spaced apart from the sidewall of the through hole 123, the micro bumps 150 can be separated more easily.

Hereinafter, a method of manufacturing a micro bump array according to a fourth preferred embodiment of the present invention will be described with reference to FIG. 9 .

First, referring to FIG. 9A , a body 110 made of an anodic oxide film is prepared.

Next, referring to FIG. 9B , a metal layer 300 is provided under the body 110 made of an anodic oxide film.

Next, referring to FIG. 9C , a UV tape 401 is attached to the lower portion of the metal layer 300 and the carrier substrate 402 is coupled.

Next, referring to FIG. 9D , a step of forming a plurality of through holes 123 in the body 110 is performed.

Next, referring to FIG. 9E , a step of forming the electrically conductive material portion 130 by electroplating using the metal layer 300 is performed. Through this, the electrically conductive material portion 130 is formed inside the through hole 123 of the body 110 .

Next, referring to FIG. 9F , the electrically conductive material portion 130 present on the upper surface of the body 110 made of anodized film is removed through a chemical mechanical polishing (CMP) process. In addition, by etching and removing the anodic oxide film of the periphery of the electrically conductive material portion 130, at least a portion of the electrically conductive material portion 130 is separated from the body of the anodic oxide film material.

Next, referring to FIG. 9G , the UV tape 401 is removed along with the carrier substrate 402 by weakening the adhesive force of the UV tape 401 .

Next, referring to FIG. 9H , the support member 200 is attached. A plurality of micro bumps 150 are attached to the support member 200 . The micro bumps 150 are supported by the support member 200 and can be transported while being attached to the support member 200 , and the micro bumps 150 can be separated from the support member 200 by an external force. The support member 200 may be a flexible film. Alternatively, the support member 200 may be blue tape. However, it is not limited thereto.

Modification of the micro bump 150

Modifications of the micro bumps 150 constituting the micro bump array according to a preferred embodiment of the present invention will be described with reference to FIGS. 10 and 11 .

The micro bumps 150 include the electrically conductive material portion 130 and the bonding material portion 120 provided on at least a part of the top and bottom of the electrically conductive material portion 130 . By forming the electrically conductive material portion 130 and the bonding material portion 120 inside the through hole 123 in the electroplating process, the micro bumps 150 form the electrically conductive material portion 130 and the bonding material portion 120. You can form a configuration that includes.

The electrically conductive material portion 130 includes at least one of Cu, Al, W, Au, Ag, Mo, Ta, or alloys containing these materials, and the bonding material portion 120 includes Sn, AgSn, and Au. , PbSn, SnAgCu, SnAgBi, AuSn, In, InSn, or includes at least one of alloys containing Sn. For example, the conductive material part 130 is copper (Cu) or an alloy material containing copper (Cu) as a main component, and the bonding material part 120 is tin (Sn) or an alloy material containing tin (Sn) as a main component. can

Referring to FIG. 10 , the bonding material portion 120 includes a first bonding material portion 121 provided below the electrically conductive material portion 130 and a second bonding material portion provided above the electrically conductive material portion 130. It includes the material part 123.

The first bonding material unit 121 and the second bonding material unit 123 may be made of the same material. Alternatively, the first bonding material unit 121 and the second bonding material unit 123 may be made of different materials. Also, the melting points of the first bonding material part 121 and the second bonding material part 123 may be different from each other.

Referring to FIG. 11 , the micro bumps 150 include the first bonding material portion 121 only under the electrically conductive material portion 130 . Of course, the second bonding material portion 123 may be provided only on the upper portion of the electrically conductive material portion 130 .

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. Or it can be carried out by modifying.

150: micro bump 155: fine trench
200: support member 300: metal layer

Claims (11)

a plurality of micro bumps including an electrically conductive material portion; and
A micro bump array comprising a support member supporting the plurality of micro bumps.
According to claim 1,
A micro bump array comprising a plurality of micro trenches on side surfaces of the micro bumps.
According to claim 2,
The micro-bump array of claim 1 , wherein the micro-trench is provided entirely along a side circumference of the micro-bump.
According to claim 1,
The electrically conductive material portion includes at least one of Cu, Al, W, Au, Ag, Mo, Ta, or an alloy containing these materials.
According to claim 1,
It includes a body made of an anodic oxide film material provided on the upper surface of the support member,
The micro bump array is provided in the through hole of the body made of the anodic oxide film.
According to claim 1,
Including a metal layer provided between the micro bump and the support member,
A micro bump array, wherein a plurality of the micro bumps are connected to the metal layer.
According to claim 5,
A micro bump array comprising a separation space between the micro bumps and the through holes.
According to claim 1.
The micro bumps include a bonding material portion provided on at least a part of an upper portion and a lower portion of the electrically conductive material portion.
According to claim 8,
The bonding material part includes at least one of Sn, AgSn, Au, PbSn, SnAgCu, SnAgBi, AuSn, In, InSn, or an alloy containing Sn, the micro bump array.
According to claim 1,
The support member is a flexible film. microbump array.
According to claim 1,
The support member is a blue tape or an ultraviolet tape, a micro bump array.

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