KR20230063007A - Substrate processing method - Google Patents

Abstract

The present invention relates to a device for processing a substrate using plasma - the device includes a support unit supporting the substrate, and the support unit includes an RF rod for applying RF power and an electrode plate to which the RF rod is connected. It provides a method of treating a substrate using -. A substrate processing method includes an adjusting step of adjusting a processing rate of the substrate; and a processing step of processing the substrate with the plasma at the processing rate adjusted in the adjusting step, wherein the adjusting step includes a first dielectric plate and a second material of a material having a reactance value different from that of the first dielectric plate. Any one of the dielectric plates selected from among the dielectric plates may be installed under the electrode plate.

Description

Substrate processing method {SUBSTRATE PROCESSING METHOD}

The present invention relates to a method of processing a substrate.

Plasma is generated by a very high temperature or a strong electric field or RF Electromagnetic Fields, and refers to an ionized gas state composed of ions, electrons, or radicals. A semiconductor device manufacturing process may include an etching process, an ashing process, and the like using plasma. A process of treating a substrate such as a wafer by using plasma is performed by colliding ion and radical particles contained in the plasma with the wafer. As the line width between patterns formed on a wafer has recently become very fine, it is required to precisely control substrate processing by plasma.

In general, an etching apparatus for etching a wafer using plasma includes an RF power source and a process gas supply source. In addition, process conditions such as the amount of power applied by the RF power source and the type of process gas are determined according to the degree of etching required for the wafer. When the same etching devices etch a wafer under the same processing conditions, the same etching performance must be implemented. Only then can Tool To Tool Matching (TTTM, etching devices achieve the same etching performance) is possible.

However, in the case of actually processing a wafer, the etching rate (Etch Rate ) has a slight difference of about 1-2%. In order to adjust this difference, a method of varying the supply flow rate of the process gas or adjusting the size of the applied RF power may be considered, but this method has difficulty in setting different processing recipes for each etching device.

An object of the present invention is to provide a substrate processing method capable of adjusting a processing rate for a substrate.

In addition, an object of the present invention is to provide a substrate processing method that facilitates Tool to Tool Matching.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention relates to a device for processing a substrate using plasma - the device includes a support unit supporting the substrate, and the support unit includes an RF rod for applying RF power and an electrode plate to which the RF rod is connected. It provides a method of treating a substrate using -. A substrate processing method includes an adjusting step of adjusting a processing rate of the substrate; and a processing step of processing the substrate with the plasma at the processing rate adjusted in the adjusting step, wherein the adjusting step includes a first dielectric plate and a second material of a material having a reactance value different from that of the first dielectric plate. Any one of the dielectric plates selected from among the dielectric plates may be installed under the electrode plate.

According to an embodiment, when the reactance value of the first dielectric plate is smaller than that of the second dielectric plate and the processing rate is to be increased, the second one of the first dielectric plate and the second dielectric plate is used. A dielectric plate may be installed below the electrode plate.

According to an embodiment, when the reactance value of the first dielectric plate is smaller than the reactance value of the second dielectric plate and the processing rate is to be lowered, the first one of the first dielectric plate and the second dielectric plate is used. A dielectric plate may be installed below the electrode plate.

According to one embodiment, the device, when viewed from the top, an insulating ring provided to surround the substrate supported by the support unit; and a conductive block configured to be surrounded by the insulating ring, and in the adjusting step, a first cable member connectable to the conductive block, and having a reactance value different from that of the first cable member and connected to the conductive block Any one cable member selected from possible second cable members may be connected to the conductive block.

According to an embodiment, when the reactance value of the first cable member is greater than that of the second cable member and the processing rate is to be increased, the second cable member of the first cable member and the second cable member is used. A cable member may be connected to the conductive block.

According to an embodiment, when the reactance value of the first cable member is greater than the reactance value of the second cable member and the processing rate is to be lowered, the second cable member of the first cable member and the second cable member is used. A cable member may be connected to the conductive block.

In addition, the present invention, a chamber having a processing space; a support unit supporting a substrate in the processing space; and a gas supply unit supplying a process gas to the processing space, wherein the support unit includes: an electrode plate to which an RF load is applied; and a conductive ring arranged to surround an outer circumference of the electrode plate when viewed from above. In the substrate processing method, a first cable member is connected to the conductive ring when processing a first substrate, and a second cable member having a reactance value different from that of the first cable member is connected to the conductive ring when processing a second substrate different from the first substrate. Cable members can be connected.

According to an embodiment, a reactance value of the first cable member may be greater than a reactance value of the second cable member, and a processing rate required for the first board may be smaller than a processing rate required for the second board. .

According to an embodiment, a first dielectric plate is installed under the electrode plate when the first substrate is processed, and a material having a dielectric constant different from that of the first dielectric plate is provided under the electrode plate when the second substrate is processed. A second dielectric plate may be installed.

According to an embodiment, a reactance value of the first dielectric plate may be smaller than a reactance value of the second dielectric plate, and a processing rate required for the first substrate may be smaller than a processing rate required for the second substrate. .

According to an embodiment of the present invention, a processing rate for a substrate may be adjusted.

In addition, according to an embodiment of the present invention, Tool to Tool Matching can be easily performed.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a diagram schematically illustrating how bias power is applied when a first dielectric plate is installed in a support unit.
3 is a diagram schematically illustrating how bias power is applied when a second dielectric plate is installed in a support unit.
4 is a diagram schematically illustrating how bias power is reflected when a first cable member is connected to a conductive ring of a support unit.
5 is a view schematically illustrating how bias power is reflected when a second cable member is connected to a conductive ring of a support unit.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

Hereinafter, FIG. 1 is a view showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1 , the substrate processing apparatus 10 may process a substrate W using plasma P. The substrate processing apparatus 10 may perform an etching process of removing a thin film formed on the substrate W, for example, a silicon oxide film, using plasma P. Alternatively, the substrate processing apparatus 10 may perform an ashing process of removing the photoresist film using the plasma P. However, it is not limited thereto, and the substrate processing apparatus 10 may be used in various processing processes of processing the substrate W using the plasma P. A plurality of substrate processing apparatuses 10 may be provided.

The substrate processing apparatus 10 includes a chamber 100, a support unit 200, a shower head unit 300, a gas supply unit 400, an exhaust unit 500, a baffle 600, and a controller 700. can do.

The chamber 100 may have a processing space 102 in which a substrate processing process is performed. The chamber 100 may have a closed shape. The chamber 100 may be made of a conductive material. For example, the chamber 100 may be made of a material containing metal. Also, the chamber 100 may be grounded. An exhaust hole 104 connected to an exhaust unit 500 to be described later may be formed on a bottom surface of the chamber 100 .

A heater (not shown) may be provided in the chamber 100 . A heater may heat the chamber 100 . The heater may be electrically connected to a heating power source (not shown). The heater may generate heat by resisting a current applied from a heating power source. Heat generated by the heater may be transferred to the processing space 102 . The processing space 102 may be maintained at a predetermined temperature by the heat generated by the heater. A plurality of heaters may be provided in the chamber 100 . The heater may be provided as a coil-shaped heating wire. However, it is not limited thereto, and the heater may be variously modified as a known device capable of heating the chamber 100 .

The support unit 200 may support the substrate W in the processing space 102 . The support unit 200 may be provided as an electrostatic chuck that adsorbs and supports the substrate W using electrostatic force.

The support unit 200 includes an upper plate 210, a lower plate 220 (dielectric plate), an insulating member 230, a support frame SF, a ground plate 240, a lower cover 250, an interface cover 260, It may include a ring member 270 , a conductive ring 280 , and a cable member 290 .

The upper plate 210 may support the substrate (W). The top plate 210 may form an electric field in the processing space 102 . The upper plate 210 may include a support plate 210a and an electrode plate 210b.

The support plate 210a may support the substrate W. The support plate 210a may be made of an insulating material. The support plate 210a may be made of a material including ceramic. An electrostatic electrode 211 may be buried in the support plate 210a. The electrostatic electrode 211 may be electrically connected to the suction power source 213 . The adsorption power source 213 may be a DC power source. A switch (not shown) may be installed between the electrostatic electrode 211 and the suction power source 213 . The electrostatic electrode 211 may be electrically connected to the suction power source 213 by turning on/off of a switch. When the switch is turned on, DC current may be applied to the electrostatic electrode 211 . An electrostatic force may act between the electrostatic electrode 211 and the substrate W by the current applied to the electrostatic electrode 211 . The substrate W may be adsorbed and/or fixed to the support plate 210a by electrostatic force.

The electrode plate 210b may be provided below the support plate 210a. The electrode plate 210b may be made of a material containing metal. The electrode plate 210b may be made of a material containing aluminum. The electrode plate 210b may form an electric field in the processing space 102 . A fluid passage (not shown) may be formed in the electrode plate 210b to control the electrode plate to a predetermined temperature. A cooling fluid may flow through the fluid passage. As will be described later, the electrode plate 210b can receive high frequency power from the power supply rod 221 (RF rod). That is, the electrode plate 210b may be a lower electrode.

The power supply rod 221 may apply power to the electrode plate 210b. The power supply rod 221 may be electrically connected to the electrode plate 210b. The power supply rod 221 may be connected to the lower power source 223 . The lower power supply 223 may be a high frequency power supply generating high frequency power. The high frequency power source may be an RF power source. The RF power source may be a high bias power RF power source. The power supply rod 221 may receive high frequency power from the lower power source 223 and transfer the received power to the electrode plate 210b. The power supply rod 221 may be provided with a conductive material. For example, the power supply rod 221 may be provided with a material including metal. The power supply rod 221 may be a metal rod. Also, the power supply rod 221 may be connected to the matching device 222 . The power supply rod 221 may be connected to the lower power source 223 via the matching device 222 . The matcher 225 may perform impedance matching.

The dielectric plate 220 may be disposed below the electrode plate 210b. The dielectric plate 220 may be provided with an insulating material. The dielectric plate 220 may be made of a material including ceramic. The dielectric plate 220 may have a substantially disk shape when viewed from the top. When viewed from the top, the dielectric plate 220 may have a larger diameter than the electrode plate 210b. A conductive ring 280 and a first insulating ring 231, which will be described later, may be disposed on an edge region of the dielectric plate 220. The first insulating ring 231 and the conductive ring 232 may be disposed to surround the outer circumference of the conductive plate 210b when viewed from above.

When viewed from above, the insulating member 230 may be configured to surround the outer circumference of the substrate (W). The insulating member 230 may include a first insulating ring 231 and a second insulating ring 232 . When viewed from above, the first insulating ring 231 may be placed on an edge region of the dielectric plate 220 . A groove may be formed inside the first insulating ring 231 . The groove of the first insulating ring 231 may be processed into a ring shape. A conductive ring 280 may be inserted into the groove of the first insulating ring 231 . The conductive ring 280 may be surrounded by the first insulating ring 231 and the dielectric plate 220 . The conductive ring 280 may be connected to the cable member 290 . The cable member 290 may include a cable 291 and a variable capacitor 292 . A variable capacitor 292 may be installed on the cable 291. According to the setting of the capacitance of the variable capacitor 292, the flow of the plasma P delivered to the edge region of the substrate W may be changed.

When viewed from above, the second insulating ring 232 may be configured to surround the first insulating ring 232 . The second insulating ring 232 may be provided between the dielectric plate 220 and the inner wall of the chamber 100 . The second insulating ring 232 may be provided between the dielectric plate 220 and the baffle 600 to be described later.

The support frame SF may support the dielectric plate 220 . The support frame SF may be provided in various shapes capable of supporting the dielectric plate 220 . A ground plate 240 may be disposed below the support frame SF. The ground plate 240 may be grounded. The ground plate 240 may have a circular plate shape when viewed from above.

A lower cover 250 may be disposed under the ground plate 240 . The lower cover 250 may have a cylindrical shape with an open top. The lower cover 250 may be combined with the ground plate 240 to form the lower space 252 . Various interface lines connected to the electrostatic electrode 211 and the power supply rod 221 may pass through the lower space 252 . These interface lines may be connected to substrates disposed outside the chamber 100 through the interface cover 260 connected to the lower cover 250 .

The ring member 270 may include a first ring 271 and a second ring 272 . The first ring 271 may have a ring shape when viewed from above. The top surface of the first ring 271 may have a stepped shape such that the height of the outer top surface is higher than the height of the inner top surface. The first ring 271 may be placed over an edge area of the upper plate 210 and an outer upper surface of the first insulating ring 231 . The first ring 271 may be a focus ring.

The second ring 272 may have a ring shape when viewed from above. The upper surface of the second ring 272 may have an inner upper surface having a flat shape and an outer upper surface inclined downward in a direction toward the outside of the substrate W supported by the support unit 200 . In addition, the second ring 272 may be provided with a material including quartz.

The shower head unit 300 may disperse gas supplied from the top. Also, the shower head unit 300 may uniformly supply the gas supplied by the gas supply unit 400 to the processing space 102 . A shower head 310 and a gas dispensing plate 320 may be included.

The shower head 310 is disposed below the gas dispensing plate 320 . The shower head 310 is spaced apart from the top of the chamber 100 by a certain distance from the bottom to the bottom. The shower head 310 is located above the support unit 200 . A certain space is formed between the upper surface of the shower head 310 and the chamber 100. The shower head 310 may be provided in a plate shape having a constant thickness. The bottom surface of the shower head 310 may be anodized to prevent arc generation by plasma. A cross section of the shower head 310 may have the same shape and cross section as that of the support unit 200 . A plurality of gas supply holes 312 are formed in the shower head 310 . include The gas supply hole 312 may be formed to penetrate the upper and lower surfaces of the shower head 310 in a vertical direction.

The shower head 310 may be made of a material that generates a compound by reacting with plasma generated from the gas supplied by the gas supply unit 400 . For example, the shower head 310 may be made of a material that generates a compound by reacting with ions having the highest electronegativity among ions included in plasma. For example, the shower head 310 may be made of a material containing silicon (Si).

The gas spray plate 320 may be disposed above the shower head 310 . The gas injection plate 320 may be spaced apart from the upper surface of the chamber 100 by a predetermined distance. The gas distributing plate 320 may diffuse gas supplied from the top. A gas introduction hole 322 may be formed in the gas dispensing plate 320 . The gas introduction hole 322 may be formed at a position corresponding to the gas supply hole 312 described above. The gas introduction hole 322 may communicate with the gas supply hole 312 . Gas supplied from the upper part of the shower head unit 300 may be supplied to the lower part of the shower head 310 through the gas introduction hole 322 and the gas supply hole 312 sequentially. The gas dispensing plate 320 may include a metal material. The gas dispensing plate 320 may be grounded. The gas injection plate 320 may function as an upper electrode by being grounded.

The gas supply unit 400 may supply process gas to the processing space 102 of the chamber 100 . The process gas supplied by the gas supply unit 400 may be excited into a plasma state. Also, the gas supplied by the gas supply unit 400 may be a gas containing fluorine. For example, the process gas supplied by the gas supply unit 400 may include carbon tetrafluoride.

The gas supply unit 400 may include a gas supply nozzle 410 , a gas supply line 420 , and a gas storage unit 430 . The gas supply nozzle 410 may be installed in the central portion of the upper surface of the chamber 100 . An injection hole may be formed on a lower surface of the gas supply nozzle 410 . The nozzle may supply process gas to the processing space 102 of the chamber 100 . The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage unit 430 . The gas supply line 420 may supply process gas stored in the gas storage unit 430 to the gas supply nozzle 410 . A valve 421 is installed in the gas supply line 420 . The valve 421 opens and closes the gas supply line 420 and can adjust the flow rate of process gas supplied through the gas supply line 420 .

The exhaust unit 500 may exhaust the processing space 102 . The exhaust unit 500 may exhaust byproducts generated during the process of processing the substrate W in the processing space 102 or process gas supplied to the processing space 102 to the outside of the chamber 100 . The exhaust unit 500 may include a pressure reducing member 510 and a pressure reducing line 520 . The pressure reducing member 510 may deliver reduced pressure to the pressure reducing line 520 . The pressure reducing line 520 may be connected to the exhaust hole 104 of the chamber 100 . The reduced pressure generated by the pressure reducing member 510 is transferred to the exhaust hole 104 through the reduced pressure line 520 , and the reduced pressure transmitted to the exhaust hole 104 may be transferred to the processing space 102 . The pressure reducing member 510 may be a pump. However, it is not limited thereto, and the pressure reducing member 510 may be variously modified with a known device capable of delivering reduced pressure to the processing space 102 .

A baffle 600 may be disposed in processing space 102 . The baffle 600 may be disposed between the inner wall of the chamber 100 and the support unit 200 . The baffle 600 may have a generally ring shape when viewed from the top. The baffle 600 may be grounded. For example, the baffle 600 may be electrically connected to the grounded chamber 100 and grounded through the chamber 100 . However, it is not limited thereto, and the baffle 600 may be directly connected to a ground line or electrically connected to another grounded substrate other than the chamber 100 to be grounded.

In addition, at least one through hole 602 through which air current generated by the reduced pressure provided by the exhaust unit 500 flows may be formed in the baffle 600 . For example, a plurality of through holes 602 may be formed in the baffle 600 , and the through holes 602 may be formed to pass through the baffle 600 from the upper surface to the lower surface of the baffle 600 .

The controller 700 may control the substrate processing apparatus 10 . The controller 700 may control the substrate processing apparatus 10 so that the substrate processing apparatus 10 may process the substrate W using the plasma P. For example, the controller 700 includes the support unit 200, the gas supply unit 400, and the exhaust unit 500 so that the substrate processing apparatus 10 can process the substrate W using the plasma P. At least one of them can be controlled. The controller 700 includes a process controller composed of a microprocessor (computer) that controls the substrate processing apparatus 10, a keyboard through which an operator inputs commands to manage the substrate processing apparatus 10, and the like, and substrate processing. A user interface consisting of a display or the like that visualizes and displays the operation status of the apparatus 10, a control program for executing processes executed in the substrate processing apparatus 10 under the control of a process controller, and various data and processing conditions. A storage unit in which a program for executing a process, that is, a process recipe, is stored in each constituent unit may be provided. Also, the user interface and storage may be connected to the process controller. The processing recipe may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

The substrate processing apparatus 10 may process the substrate W using plasma. The substrate processing apparatus 10 may perform a processing step of processing the substrate W with plasma.

A plurality of substrate processing apparatuses 10 may be provided. The substrate processing apparatuses 10 may process the substrate W under preset processing conditions. Process conditions set between the substrate processing apparatuses 10 may be identical to each other. In this case, the substrate processing apparatuses 10 must have the same processing performance as each other. For example, when the substrate processing apparatuses 10 process the substrate W under the same process conditions, the processing rates (eg, etching rates, etch rates) of the substrates W must be the same. However, a slight difference of about 1% to 2% may occur in the processing rate between the substrate processing apparatuses 10 for various reasons.

Therefore, according to an embodiment of the present invention, when the substrate processing apparatus 10 processes the substrate W, it goes through an adjustment step of adjusting the processing rate for the substrate W, and at the adjusted processing rate in the adjustment step The substrate W is treated with plasma. The adjustment step may be performed for each substrate processing apparatus 10 . In this case, the substrate processing apparatuses 10 may have the same processing rate as each other. Hereinafter, the adjustment step will be described in detail.

In the adjustment step, the processing rate may be adjusted by changing the dielectric plate 220 installed in the unit 200 . The dielectric plate 220 may be made of a ceramic material.

The capacitance of the dielectric plate 220 can be defined as:

[C _Isolator : capacitance of dielectric plate 220, ε ₀ : permittivity of vacuum, ε _r : dielectric constant of dielectric plate 220, A _Isolator : area of dielectric plate 220, T _Isolator : dielectric plate 220 thickness of]

Since the area of the dielectric plate 220, the thickness of the dielectric plate 220, and the vacuum permittivity are all predetermined values, the capacitance of the dielectric plate 220 varies depending on the dielectric constant of the dielectric plate 220. That is, as the dielectric constant of the dielectric plate 220 decreases, the capacitance of the dielectric plate 220 also decreases.

Also, the reactance of the dielectric plate 220 may be defined as follows.

[X: reactance [Ω] of the dielectric plate 220, C _Isolator : capacitance of the dielectric plate 220]

That is, as the capacitance of the dielectric plate 220 decreases, the reactance value of the dielectric plate 220 increases. In other words, as the dielectric constant of the dielectric plate 220 decreases, the reactance value of the dielectric plate 220 may increase. When the reactance value of the dielectric plate 220 is changed, the intensity of the electric field generated in the processing space 102 may be changed. Accordingly, the processing rate for the substrate W may be adjusted.

A worker may have a plurality of dielectric plates 220 and have information about a reactance value of each of the dielectric plates 220 in advance. And, by changing the dielectric plate 220 installed on the support unit 200, the processing rate of each of the substrate processing apparatuses 10 may be adjusted. For example, a worker may have a first dielectric plate 220-1 and a second dielectric plate 220-2. The first dielectric plate 220-1 and the second dielectric plate 220-2 may have different reactance values. For example, the first dielectric plate 220-1 may have a relatively small reactance value, and the second dielectric plate 220-1 may have a relatively large reactance value compared to that of the first dielectric plate 220-1. In addition, the bias power applied by the lower power source 223 may escape downward while flowing along the outer wall of the first dielectric plate 220-1.

As shown in FIG. 2 , when the first dielectric plate 220 - 1 having a small reactance value is installed in the support unit 200 , the bias power applied by the lower power supply 223 may be relatively lowered toward the lower side. In this case, the amount of plasma generated in the processing space 102 may be reduced, and thus the processing rate for the substrate W may be reduced.

Unlike this, as shown in FIG. 3 , when the second dielectric plate 220-2 having a large reactance value is installed in the support unit 200, the bias power applied by the lower power supply 223 is relatively small towards the lower side. can fall out In this case, the amount of plasma generated in the processing space 102 may increase, and thus the processing rate for the substrate W may increase.

In addition, when the operator has a plurality of cable members 290 and the value of the variable capacitor 292 of the cable members 290 is set to a specific value, information about the reactance value of each of the cable members 290 is provided in advance. may have

In addition, by changing the cable member 290 connected to the conductive ring 280, the processing rate of each substrate processing apparatus 10 may be adjusted. For example, a worker may have a first cable member 290-1 and a second cable member 290-2. When the variable capacitor values of the first cable member 290-1 and the second cable member 290-2 are the same, the reactance values of the cable members may be different from each other. For example, the first cable member 290-1 may have a relatively small reactance value and the second cable member 290-2 may have a relatively large reactance value compared to that of the first cable member 290-1. In addition, the bias power applied by the lower power source 223 may flow toward the conductive ring 280 in some cases. Such bias power is applied to the electrode plate 210b by the cable member 290 and the conductive ring 280. It can be reflected towards.

As shown in FIG. 4 , when the first cable member 290 - 1 having a large reactance value is connected to the conductive ring 280 , the reflected amount of the bias power may be relatively small. In this case, the amount of plasma generated in the processing space 102 may be reduced, and thus the processing rate for the substrate W may be reduced.

Unlike this, as shown in FIG. 5 , when the second cable member 290 - 2 having a small reactance value is connected to the conductive ring 280 , the reflected amount of the bias power may be relatively large. In this case, the amount of plasma generated in the processing space 102 may increase, and accordingly, the processing rate for the substrate W may increase.

As such, by changing the reactance values of the dielectric plate 220 and the cable member 290 installed in the support unit 200, the amount of plasma generated in the processing space 102 can be adjusted, and accordingly, the substrate W ) may be possible with fine adjustments to the processing rate. Accordingly, processing performance of the substrate processing apparatuses 10 may be equal to each other.

In addition, processing rates required for each substrate W may be different from each other. For example, when processing a first substrate and a second substrate different from the first substrate, processing rates for the first substrate and the second substrate may be different. For example, a processing rate required for the first substrate may be less than a processing rate required for the second substrate.

In this case, when processing the first substrate, the dielectric plate 220 having a relatively low reactance value may be installed on the support unit. In addition, a cable member 290 having a relatively large reactance value may be installed in the support unit. For example, when processing the first substrate, the first dielectric plate 220-1 having a relatively small reactance value and the first cable member 290-1 having a relatively large reactance value may be installed on the support unit 200. there is.

Alternatively, when processing the second substrate, the dielectric plate 220 having a relatively large reactance value may be installed on the support unit 200 . In addition, the cable member 290 - 2 having a relatively small reactance value may be installed in the support unit 200 . For example, when processing the second substrate, the second dielectric plate 220-1 having a relatively large reactance value and the second cable member 290-2 having a relatively small reactance value may be installed on the support unit 200. there is.

The following results are evaluation results obtained by the inventor finely adjusting the processing rate by 1 to 2% according to the increase in the reactance of the dielectric plate 220 and the reactance of the cable member 290 in the substrate processing apparatus 10 .

relative etch rate Cable member, reactance [Ω] 318 437 Dielectric plate, reactance [Ω] 1.42 1.00 0.99 (1%) 1.36 0.99 (1%) 0.98 (2%)

Referring to the above evaluation results, it can be seen that the processing rate increases as the reactance value of the dielectric plate 220 increases, and the processing rate increases as the reactance value of the cable member 290 decreases. , The gas spray plate 320 of the shower head unit 300 is grounded and the lower power source 223 is connected to the electrode plate 210b as an example, but is not limited thereto. For example, a high-frequency power source may be connected to the gas injection plate 320 and the electrode plate 210b may be grounded. Alternatively, a high frequency power source may be connected to the gas injection plate 320 and the electrode plate 210b.

In addition, in the above-described example, the substrate for forming the electric field for generating the plasma P has been described as an example of the electrode plate 210b, but it is not limited thereto, and the antenna is not limited thereto. It may be formed to generate plasma (P).

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Substrate processing unit: 10
Chamber: 100
Support units: 200
Shower head unit: 300
Exhaust unit: 500
Baffle: 600
Controller: 700

Claims (10)

An apparatus for processing a substrate using plasma, wherein the apparatus includes a support unit for supporting the substrate, and the support unit includes an RF rod for applying RF power and an electrode plate to which the RF rod is connected. In the method of processing a substrate using
an adjustment step of adjusting the processing rate of the substrate; and
A processing step of processing the substrate with the plasma at the processing rate adjusted in the adjusting step;
In the adjustment step,
A method for processing a substrate, wherein any one dielectric plate selected from among a first dielectric plate and a second dielectric plate made of a material different in reactance value from the first dielectric plate is installed under the electrode plate. According to claim 1,
The reactance value of the first dielectric plate is smaller than the reactance value of the second dielectric plate,
When the processing rate is to be increased, the second dielectric plate among the first dielectric plate and the second dielectric plate is installed under the electrode plate. According to claim 1,
The reactance value of the first dielectric plate is smaller than the reactance value of the second dielectric plate,
When the processing rate is to be lowered, the first dielectric plate among the first dielectric plate and the second dielectric plate is installed under the electrode plate. According to any one of claims 1 to 3,
The device,
an insulating ring provided to surround the substrate supported by the support unit when viewed from above; and
A conductive block configured to be surrounded by the insulating ring,
In the adjustment step,
Substrate processing comprising connecting a first cable member connectable to the conductive block and a second cable member having a reactance value different from that of the first cable member and connectable to the conductive block to the conductive block. method. According to claim 4,
The reactance value of the first cable member is greater than the reactance value of the second cable member;
When the processing rate is to be increased, the second cable member of the first cable member and the second cable member is connected to the conductive block. According to claim 4,
The reactance value of the first cable member is greater than the reactance value of the second cable member;
When the processing rate is to be lowered, the second cable member of the first cable member and the second cable member is connected to the conductive block. a chamber having a processing space; a support unit supporting a substrate in the processing space; and a gas supply unit supplying a process gas to the processing space, wherein the support unit includes: an electrode plate to which an RF load is applied; and a conductive ring disposed to surround an outer circumference of the electrode plate when viewed from above, wherein the substrate processing method includes:
When processing a first substrate, a first cable member is connected to the conductive ring;
When processing a second substrate different from the first substrate, a second cable member having a reactance value different from that of the first cable member is connected to the conductive ring. According to claim 7,
The reactance value of the first cable member is greater than the reactance value of the second cable member;
The processing rate required for the first substrate is
A substrate processing method that is smaller than the processing rate required for the second substrate. According to claim 7,
When processing the first substrate, a first dielectric plate is installed under the electrode plate,
A substrate processing method comprising: installing a second dielectric plate provided of a material having a dielectric constant different from that of the first dielectric plate under the electrode plate when processing the second substrate. According to claim 9,
The reactance value of the first dielectric plate is smaller than the reactance value of the second dielectric plate,
The processing rate required for the first substrate is
A substrate processing method that is smaller than the processing rate required for the second substrate.

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