KR20230046375A - Apparatus and methods for treating substrates - Google Patents

Abstract

One embodiment of the present invention relates to a substrate processing apparatus, which can discharge all the wetting solution stagnant in a nozzle and maintain a constant flow rate of the supplied wetting solution, comprising: a chuck on which a substrate is loaded; a nozzle member supplying a wetting solution to a surface of the substrate to keep the surface of the substrate in a wet state; a drain cup disposed adjacent to the chuck and storing the wetting solution discharged from the nozzle member and then discharging the same; and a control unit controlling the nozzle member to move to an upper part of the drain cup and discharge the wetting solution into the drain cup at a preset flow rate before supplying the wetting solution to the substrate. The drain cup comprises: a body providing a space for storing the wetting solution discharged from the nozzle member; a temperature sensor disposed in the space and measuring the temperature of the wetting solution stored in the space; a load sensor disposed at a lower part of the body and measuring the load of the wetting solution stored in the space; a drain pipe connected to the body and providing a flow path through which the wetting solution stored in the space is drained; and a substrate processing device including a valve that opens and closes the drain pipe.

Description

Substrate processing apparatus and substrate processing method using the same {APPARATUS AND METHODS FOR TREATING SUBSTRATES}

The present invention relates to a substrate processing apparatus and a substrate processing method using the same.

In general, a semiconductor device, which is one of integrated circuit devices, is manufactured from a wafer based on silicon. Specifically, a semiconductor device is manufactured by forming a fine circuit pattern on an upper surface of a wafer by performing unit processes such as a deposition process, a photolithography process, an etching process, and a cleaning process.

Among the unit processes, an etching process or a cleaning process may be performed by a single-wafer type device processing a single wafer and a batch type device processing a plurality of wafers simultaneously. In particular, the single-wafer type device may process a wafer by supplying an etching liquid, a cleaning liquid, a rinsing liquid, a drying gas, etc. onto the wafer while rotating the wafer. However, as the line width of circuit patterns decreases, a drying method using a supercritical fluid has recently been adopted. Specifically, the wafer can be dried by placing the wafer coated with the wetting solution in a sealed pressure container and injecting a high-pressure supercritical fluid into the pressure container to replace the supercritical fluid with the wetting solution on the wafer. there is.

One of the problems to be solved by the present invention is to provide a substrate processing apparatus capable of discharging all the wetting solution stagnant in the nozzle of the substrate processing apparatus and maintaining a constant flow rate of the supplied wetting solution.

One of the problems to be solved by the present invention is to provide a substrate processing method capable of discharging all the wetting solution stagnant in the nozzle of a substrate processing apparatus and maintaining a constant flow rate of the supplied wetting solution.

One embodiment of the present invention, the substrate is loaded chuck (chuck); a nozzle member supplying a wetting solution to the surface of the substrate to keep the surface of the substrate in a wet state; a drain cup disposed adjacent to the chuck and discharged after storing the wetting solution discharged from the nozzle member; and a control unit for controlling to discharge the wetting solution into the drain cup at a preset flow rate by moving the nozzle member above the drain cup before supplying the wetting solution to the substrate, wherein the drain cup includes: a body portion providing a space for storing the wetting solution discharged from the nozzle member; a temperature sensor disposed in the space portion to measure a temperature of the wetting solution stored in the space portion; a load sensor disposed under the body and measuring a load of the wetting solution stored in the space; a drain pipe connected to the body and providing a passage through which the wetting solution stored in the space is drained; and a valve opening and closing the drain pipe.

One embodiment of the present invention, the step of etching or cleaning the substrate in a first module for etching or cleaning the substrate; discharging the wetting solution at a predetermined flow rate into a drain cup through a nozzle pipe supplying the wetting solution to the substrate, thereby removing the wetting solution stagnant in the nozzle pipe; measuring a temperature value of the wetting solution discharged into the drain cup; measuring a load value of the wetting solution discharged into the drain cup; converting the measured load value of the wetting solution into a flow rate value with reference to the temperature value, and comparing the converted flow rate value with the predetermined flow rate value; matching a flow rate value of the wetting solution supplied through the nozzle pipe with the predetermined flow rate based on the result of the comparison; applying the wetting solution to the substrate; transferring the substrate to a second module for drying; and drying the substrate.

The substrate processing apparatus according to the technical concept of the present invention can discharge all the wetting solution stagnant in the nozzle of the substrate processing apparatus and maintain a constant flow rate of the supplied wetting solution.

The substrate processing method according to the technical idea of the present invention can discharge all the wetting solution stagnant in the nozzle of the substrate processing apparatus and maintain a constant flow rate of the supplied wetting solution.

Various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 is a schematic configuration diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic configuration diagram for explaining the first module of FIG. 1 .
FIG. 3 is a perspective view illustrating a process in which a wetting solution is discharged from the nozzle member of FIG. 2 to a drain cup.
4 is a schematic configuration diagram for explaining the drain cup of FIG. 2 .
5 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic configuration diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus 10 according to an embodiment of the present invention provides an etching process for etching a film on a substrate W such as a wafer used in manufacturing a semiconductor device or a substrate W It can be used to perform a cleaning process for removing foreign substances on the surface. When the etching process is performed, a cleaning process for removing an etchant or an etching by-product may be performed after the etching process. However, the substrate processing apparatus 10 is not used only to perform an etching or cleaning process, and may be used for a substrate processing process using various chemicals. For example, both an etching process for removing a film or foreign material on the substrate W and a cleaning process performed after the etching process may be performed.

The substrate processing apparatus 10 includes a first module 100 for processing a substrate W, a substrate transfer module 200, a second module 300 for drying the substrate W, a load port 400, It may include an interface module 500, a stage unit 600, and the like. As an example, the substrate cleaning apparatus 10 may include a plurality of first modules 100 , one substrate transfer module 200 and a plurality of second modules 300 as shown. However, the quantity of the first module 100 and the second module 300 may be variously changed according to the throughput of the substrate (W). As shown, the first modules 100, the substrate transfer module 200, and the second modules 300 are arranged in a track form, but may be arranged in a cluster form.

The first module 100 and the second module 300 may be provided to sequentially perform a process on one substrate (W). For example, a liquid treatment process such as a chemical process, a rinse process, and a replacement process may be performed on the substrate W in the first module 100 , and a drying process may be performed in the second module 300 . In this case, the substitution process may be performed by a wetting solution, and the drying process may be performed by a supercritical fluid.

As the wetting solution WS, a liquid capable of reducing the surface tension of deionized water or pure water applied to the surface of the substrate W in the process of etching or cleaning the substrate W may be used. For example, as the wetting solution WS, isopropyl alcohol (IPA), an isopropyl alcohol aqueous solution, or a mixed solution of a surfactant and water may be used. Also, as the supercritical fluid, for example, carbon dioxide (CO ₂ ) may be used.

The load port 400 may support the container 20 for accommodating a plurality of substrates W, and the interface module 500 transfers the substrates W stored in the container 20 to the first modules. 100 and may include an interface robot 510 and an interface chamber 520 for transferring the substrates W dried in the second modules 300 back into the container 20 . As an example, as shown, the substrate processing apparatus 10 may include a plurality of load ports 400 . The stage unit 600 may be provided to temporarily accommodate a substrate W to be processed or a processed substrate W between the interface module 500 and the substrate transfer module 200 .

FIG. 2 is a schematic configuration diagram for explaining the first module 100 of FIG. 1 .

Referring to FIG. 2 , the first module 100 includes a chamber 110 for processing a substrate W, a spin chuck 120 for supporting the substrate W in the chamber 110, and a substrate. A nozzle member 150 for supplying a wetting solution (WS) onto the substrate (W) to process (W), a drain cup for discharging the wetting solution (WS) remaining in the nozzle member 150 ( It may include a drain cup, 160, and a control unit 170 that controls the operation of the first module 100.

The spin chuck 120 may include a spin head 121 and a support pin 122 disposed on the upper surface of the spin head 121 to support the substrate W. The spin head 121 may support the substrate W through the support pin 122 and rotate the substrate W. Around the spin chuck 120, a bowl 140 for recovering the wetting solution WS scattered while supplying the wetting solution WS to the substrate W may be disposed to surround the spin chuck 120. can

A nozzle member 150 may be disposed above the spin chuck 120 to supply the wetting solution WS toward the spin head 121 .

The nozzle member 150 may include a nozzle 154 , a nozzle support 153 , a support shaft 152 , and a driving unit 151 . The nozzle 154 is disposed at an end of the nozzle support 153 and may supply a wetting solution WS to the substrate W on the spin chuck 120 . The nozzle support 153 is horizontally coupled to the support shaft 152, and the nozzle 154 can be moved according to rotation and elevation of the support shaft 152. The driving unit 151 may rotate and lift the support shaft 152 . A nozzle pipe P through which the wetting solution WS flows may be disposed inside the nozzle member 150 . The wetting solution WS supplied from the wetting solution supply unit 156 may flow to the nozzle 154 through the nozzle pipe P. A flow meter 155 may be disposed in the nozzle pipe P to measure the flow rate of the wetting solution WS supplied through the nozzle pipe P. The control unit 170 may adjust the flow rate of the wetting solution WS supplied through the wetting solution supply unit 156 based on the flow rate value measured through the flow meter 155 .

Referring to FIGS. 2 and 3 , a drain cup 160 may be disposed adjacent to the spin chuck 120 in the chamber 110 . The drain cup 160 may be used to discharge the wetting solution WS in the nozzle pipe P before supplying the wetting solution WS to the substrate W. Isopropyl alcohol (IPA), used as the wetting solution (WS), can quickly denature when stagnant. Therefore, after supplying the wetting solution WS to the substrate W, since the wetting solution WS remaining in the nozzle pipe P is highly likely to be denatured, the wetting solution WS is newly applied to the substrate W. Before supply, a constant flow rate of the wetting solution WS is discharged through the drain cup 160 to remove the wetting solution WS remaining in the nozzle pipe P. In this way, when the wetting solution WS remaining in the nozzle pipe P is discharged and removed at a predetermined flow rate, but the zero point of the flow meter 155 measuring the flow rate of the wetting solution WS is not accurately achieved , the flow rate of the wetting solution WS discharged through the nozzle pipe P may not be sufficient to remove all of the wetting solution WS remaining in the nozzle pipe P. In this case, even though the wetting solution WS at a predetermined flow rate is discharged, the wetting solution WS may remain in the nozzle pipe P. The substrate processing apparatus 10 according to an embodiment measures the temperature and load of the wetting solution WS discharged through the drain cup 160, and discharges the wet solution WS into the drain cup 160 with reference to the measured temperature value and load value. The flow rate value (volume value) of the wetted solution WS can be accurately calculated. Accordingly, it is possible to check whether or not the wetting solution WS having an originally set flow rate is discharged through the drain cup 160, and whether or not the flow meter 155 is abnormal can also be checked. The calculation of the flow rate value of the wetting solution WS discharged into the drain cup 160 with reference to the measured temperature value and load value will be described later in detail.

Referring to FIG. 4 , the drain cup 160 may include a body portion 161 , a temperature sensor 165 , a load sensor 166 , and a drain pipe 163 .

The body portion 161 may be formed in a cup shape having a space portion to temporarily store the wetting solution WS discharged through the nozzle 154 of the nozzle member 150 . The body portion 161 may be supported by a pipe-shaped support portion 162 . A drain pipe 163 through which the stored wet solution WS is discharged may be coupled to a lower portion of the body portion 161 . The drain pipe 163 may be disposed to connect the lower part of the body part 161 and the support part 162, and a valve 164 may be disposed to control the flow rate of the wetting solution WS discharged to the drain pipe 163. there is. Accordingly, when the valve 164 is opened, the wetting solution WS stored in the body portion 161 may be discharged to the support portion 162 through the drain pipe 163 . The body portion 161 may include conductive materials such as carbon nano tubes and carbon black, and may include a ground electrode for removing static electricity stored in the body portion 161. there is. The drain pipe 163 may be formed of a material that is conductive to the body portion 161 and may be formed of a material different from that of the body portion 161 . According to the embodiment, the drain pipe 163 may be formed of an elastic material.

The temperature sensor 165 may be disposed in the space of the body 161 to measure the temperature of the wetting solution WS stored in the body 161 and transmit the measured temperature value to the controller 170 . The load sensor 166 may be disposed under the body 161 to measure the load of the wetting solution WS stored in the body 161 and transmit the measured load value to the controller 170 .

The control unit 170 is for controlling the overall operation of the substrate processing apparatus 10, for example, a central processing unit (CPU), a graphic processing unit (GPU), a microprocessor, an application specific integrated circuit (ASIC) ), Field Programmable Gate Arrays (FPGA), or the like, and may include a memory for storing various data necessary for the operation of the substrate processing apparatus 10 .

The controller 170 controls the nozzle member 150 to discharge the wetting solution WS remaining in the nozzle pipe P of the nozzle member 150 before supplying the wetting solution WS to the substrate W. can Before supplying the wetting solution WS to the substrate W, the control unit 170 controls the driving unit 151 of the nozzle member 150 to control the nozzle 154 to be positioned above the drain cup 160. can In addition, it is possible to control the wetting solution WS at a predetermined flow rate to be discharged to the drain cup 160 through the nozzle 154 of the nozzle member 150 . A flow rate of the wetting solution WS discharged through the nozzle member 150 may be measured using a flow meter.

The control unit 170 detects the temperature value and load value of the wetting solution WS discharged to the drain cup 160 through the temperature sensor 165 and the load sensor 166, and converts the detected temperature value and load value to Based on this, the flow rate of the wetting solution WS discharged into the drain cup 160 can be calculated. A table for calculating a flow rate value (volume value) based on a temperature value and a load value may be previously stored in the memory of the controller 170 .

When the calculated flow rate value is equal to the predetermined flow rate, the controller 170 may proceed with a subsequent process of supplying the wetting solution WS to the substrate W. On the other hand, if the calculated flow rate value is different from the preset flow rate value, the zero point of the flow meter 155 may be adjusted to make the preset flow rate equal to the calculated flow rate value. Depending on the embodiment, when the detected temperature value of the wetting solution WS does not reach the reference temperature, the control unit 170 may discharge the wetting solution WS until the detected temperature value reaches the reference temperature value. can

Next, referring to FIG. 5, a substrate processing method according to an embodiment of the present invention will be described. A substrate processing method according to an embodiment may be performed through the substrate processing apparatus 10 of FIGS. 1 to 4 . Since each configuration of the substrate processing apparatus 10 has been described in detail above, detailed descriptions of each configuration of the substrate processing apparatus 10 are omitted to prevent duplication of description.

First, the control unit 170 transfers the substrate W to the first module 100 by the transfer robot 220 (S100), and performs an etching process or cleaning process on the substrate W in the first module 100. can be performed (S200). In the etching process or the cleaning process, an etching liquid or a cleaning liquid may be supplied to the substrate W as a treatment liquid for processing the substrate W, followed by a rinse for removing process by-products and treatment liquid remaining on the substrate W. liquid can be supplied.

Next, the wetting solution WS may be drained at a predetermined flow rate (S300). The controller 170 may drive the nozzle member 150 to position the nozzle 154 above the drain cup 160 . Based on the flow rate value detected by the flow meter 155, the controller 170 may discharge the wet solution WS at a predetermined flow rate to the drain cup 160 through the nozzle member 150. The controller 170 closes the valve 164 of the drain cup 160 to temporarily store the wetting solution WS in the body 161 of the drain cup 160, and the temperature sensor 165 and the load sensor ( 166), the temperature value and load value of the stored wetting solution (WS) can be sequentially measured (S400, S500). Depending on the embodiment, the controller 170 opens the valve 164 of the nozzle member 150 until the measured temperature value becomes the reference temperature value when the measured temperature value is less than the reference temperature value, thereby supplying The temperature of the wetting solution WS may be set to a reference temperature value.

The control unit 170 may calculate the flow rate value of the wetting solution WS based on the detected temperature value and the load value, and compare the calculated flow rate value with a predetermined flow rate value (S600). The controller 170 may perform a subsequent process of supplying the wetting solution WS to the substrate W when the calculated flow rate value and the predetermined flow rate value are the same. On the other hand, if the calculated flow rate value and the predetermined flow rate value are different from each other, it is determined that there is an error in the flow meter 155 and the zero point of the flow meter 155 can be adjusted (S700). Through this, an error of the flowmeter 155 may be corrected. Therefore, the flow rate of the wetting solution WS drained through the drain cup 160 can be accurately maintained, and the flow rate of the wetting solution WS supplied through the nozzle member 150 can be maintained constant in a subsequent process.

Next, the wetting solution WS may be supplied to the substrate W (S800). That is, the wetting solution WS may be supplied to the substrate W to prevent the substrate W from being naturally dried while being transferred to the second module 300 . Accordingly, the substrate W can be maintained in a sufficiently wet state until it is transferred to the second module 300 .

Next, the substrate (W) can be transferred to the second module 300 through the transfer robot 220 (S900), and the substrate (W) is dried in the pressure vessel 310 of the second module 300. It can be (S1000). A supercritical fluid may be supplied into the pressure container 310 , and the substrate W may be sufficiently dried by replacing the supercritical fluid with the fluid on the substrate W.

The present invention is not limited by the above-described embodiments and accompanying drawings, but is intended to be limited by the appended claims. Therefore, various forms of substitution, modification, and change will be possible by those skilled in the art within the scope of the technical spirit of the present invention described in the claims, and this also falls within the scope of the present invention. will be.

10: substrate processing device 20: container
100: first module 110: process chamber
120: spin chuck 121: spin head
122: support pin 140: bowl
150: nozzle member 151: driving unit
152: support shaft 153: nozzle support
154: nozzle 160: drain cup
161: body part 162: support part
163: drain pipe 164: valve
165: temperature sensor 166: load sensor
220: transfer robot 300: second module
400: load port 500: interface module
510: interface robot 600: stage unit
P: nozzle piping

Claims (10)

a chuck into which the substrate is loaded;
a nozzle member supplying a wetting solution to the surface of the substrate to keep the surface of the substrate in a wet state;
a drain cup disposed adjacent to the chuck and discharged after storing the wetting solution discharged from the nozzle member; and
A control unit controlling the nozzle member to move to an upper portion of the drain cup before supplying the wetting solution to the substrate to discharge the wetting solution into the drain cup at a predetermined flow rate,
The drain cup,
a body portion providing a space for storing the wetting solution discharged from the nozzle member;
a temperature sensor disposed in the space portion to measure a temperature value of the wetting solution stored in the space portion;
a load sensor disposed under the body and measuring a load value of the wetting solution stored in the space;
a drain pipe connected to the body and providing a passage through which the wetting solution stored in the space is drained; and
A substrate processing apparatus comprising a valve opening and closing the drain pipe.
According to claim 1,
and a flow meter measuring a flow rate of the wetting solution discharged through the nozzle member.
According to claim 2,
The control unit,
A substrate processing apparatus for detecting the predetermined flow rate value through the flow meter.
According to claim 2,
The control unit,
and calculating a flow rate value of the wetting solution discharged from the nozzle member based on the measured temperature value and the measured load value.
According to claim 1,
The control unit,
If the measured temperature value is less than the reference temperature value,
and draining the wetting solution stored in the space by opening the valve until the measured temperature value is equal to the reference temperature value.
According to claim 1,
The body portion is made of a conductive material,
The body portion substrate processing apparatus further comprising a ground electrode.
According to claim 1,
The control unit,
After closing the valve, measure the temperature value through the temperature sensor,
After measuring the temperature value, measuring the load value through the load sensor,
After measuring the load value, the valve is opened to discharge the wetting solution stored in the space.
According to claim 1,
The substrate processing apparatus wherein the wetting solution is isopropyl alcohol.
Etching or cleaning the substrate in a first module for etching or cleaning the substrate;
discharging the wetting solution at a predetermined flow rate into a drain cup through a nozzle pipe supplying the wetting solution to the substrate, thereby removing the wetting solution stagnant in the nozzle pipe;
measuring a temperature value of the wetting solution discharged into the drain cup;
measuring a load value of the wetting solution discharged into the drain cup;
converting the measured load value of the wetting solution into a flow rate value with reference to the temperature value, and comparing the converted flow rate value with the predetermined flow rate value;
matching a flow rate value of the wetting solution supplied through the nozzle pipe with the predetermined flow rate based on the result of the comparison;
applying the wetting solution to the substrate;
transferring the substrate to a second module for drying; and
A substrate processing method comprising drying the substrate.
According to claim 9,
The predetermined flow rate value is measured through a flow meter disposed in the nozzle pipe.

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