KR20230044174A - Power amplifier circuit - Google Patents

Abstract

The present invention provides a power amplifying circuit capable of suppressing an increase in a circuit scale and efficiently supplying an RF signal in a wide frequency band. The power amplifying circuit comprises: a first amplifying circuit amplifying a first signal in a first frequency band, and outputting a first amplified signal having first power; a second amplifying circuit amplifying a second signal in the first frequency band or a second frequency band different from the first frequency band, and outputting a second amplified signal having second power different from the first power; and a first variable adjustment circuit formed between the second amplifying circuit and a first circuit at the rear end of the second amplifying circuit, and configured to adjust first impedance when the first circuit is viewed from the second amplifying circuit.

Description

Power Amplifier Circuit {POWER AMPLIFIER CIRCUIT}

The present invention relates to a power amplifier circuit.

In a mobile communication device such as a mobile phone, a high-frequency power amplifier is used to amplify the power of a radio frequency (RF) signal transmitted to a base station. Such a high-frequency power amplifier may include a high-output path that is a circuit that outputs a high-output signal and a medium-output path that is a circuit that outputs a medium-output signal (for example, Patent Document 1). In addition, examples of other prior art are disclosed in US Patent No. 8461931 and US Patent No. 10630320.

International Publication No. 2012/098863 Specification of US Patent No. 8461931 Specification of US Patent No. 10630320

Patent Literature 1 discloses a configuration in which a medium power path and two high output paths respectively corresponding to two frequency bands are formed as a configuration of a high frequency power amplifier that amplifies signals of two different frequency bands. Each of the two high-power paths includes a switch element on the input terminal side, an input matching circuit, a high-power amplifier, an output matching circuit, and a switch element on the output terminal side. In such a configuration in which three output paths of a medium power path and two high power paths are formed, the circuit scale is increased, which is not preferable.

The present invention has been made in view of such a situation, and an object of the present invention is to provide a power amplifier circuit capable of efficiently supplying an RF signal in a wide frequency band and suppressing an increase in circuit scale.

A power amplification circuit according to an aspect of the present invention includes a first amplification circuit for amplifying a first signal of a first frequency band and outputting a first amplified signal having a first power, the first frequency band or the first frequency band and A second amplifying circuit that amplifies a second signal in a different second frequency band and outputs a second amplified signal having a second power different from the first power, and a stage subsequent to the second amplifying circuit and the second amplifying circuit. A first variable adjustment circuit formed between the first circuits and configured to be able to adjust a first impedance when the first circuit is viewed from the second amplifier circuit is provided.

(Effects of the Invention)

According to the present invention, it becomes possible to provide a power amplifier circuit capable of efficiently supplying an RF signal in a wide frequency band and suppressing an increase in circuit scale.

1 is a diagram showing the configuration of a transmission device according to a first embodiment of the present invention.
Fig. 2 is a diagram showing an example of the band configuration of each RF signal transmitted by the transmitter according to the first embodiment of the present invention.
Fig. 3 is a diagram schematically showing the band configuration shown in Fig. 2;
4 is a diagram showing the configuration of a basic example of a power amplifier circuit according to the first embodiment of the present invention.
Fig. 5 is a circuit diagram showing an example of a high-power broadband amplifier circuit and a low-power MB amplifier circuit according to the first embodiment of the present invention.
Fig. 6 is a circuit diagram showing a basic example of a first variable adjustment circuit according to the first embodiment of the present invention.
7 is a circuit diagram showing a modified example of the first variable adjustment circuit according to the first embodiment of the present invention.
8 is a circuit diagram showing an example of a fixed adjustment circuit according to the first embodiment of the present invention.
Fig. 9 is a diagram showing the configuration in the case where the basic example of the power amplifier circuit according to the first embodiment of the present invention can be applied to transmission using the transmission power of PC 1.5.
Fig. 10 is a diagram showing the configuration of Modification 1 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 11 is a diagram showing the configuration of Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 12 is a circuit diagram showing an example of a high-power broadband amplifier circuit and a low-power MB amplifier circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 13 is a circuit diagram showing a basic example of a first variable adjustment circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 14 is a circuit diagram showing a modified example of the first variable adjustment circuit in modified example 2 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 15 is a circuit diagram showing an example of a fixed adjustment circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.
Fig. 16 is a diagram showing the configuration of Modification Example 3 of the power amplifier circuit according to the first embodiment of the present invention.
17 is a diagram showing an example of a power amplifier circuit according to a reference example.
18 is a diagram showing an example of a change in power efficiency with respect to the frequency of an input signal in the power amplifier circuit according to the first embodiment of the present invention.
19 is a diagram showing an example of the band configuration of each RF signal transmitted by the transmitter according to the second embodiment of the present invention.
Fig. 20 is a diagram schematically showing the band configuration shown in Fig. 19;
Fig. 21 is a diagram showing the configuration of a power amplifier circuit according to the second embodiment of the present invention.
Fig. 22 is a diagram showing the configuration of a power amplifier circuit according to a third embodiment of the present invention.
23 is a diagram showing the configuration of a transmission/reception unit according to a fourth embodiment of the present invention.
24 is a diagram showing the configuration of a basic example of a power amplifier circuit according to a fifth embodiment of the present invention.
25 is a diagram showing an example of the band configuration of each RF signal amplified by the power amplifier circuit according to the fifth embodiment of the present invention.
Fig. 26 is a diagram showing the configuration of modified example 1 of the power amplifier circuit according to the fifth embodiment of the present invention.
Fig. 27 is a diagram showing the configuration of modification 2 of the power amplifier circuit according to the fifth embodiment of the present invention.
Fig. 28 is a diagram showing the configuration of modified example 3 of the power amplifier circuit according to the fifth embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail, referring drawings. In addition, the same code|symbol is attached|subjected to substantially the same element, and overlapping description is abbreviate|omitted as much as possible.

[First Embodiment]

A transmission device according to the first embodiment will be described. 1 is a diagram showing the configuration of a transmission device according to a first embodiment of the present invention. As shown in Fig. 1, the transmission device 1 includes a power amplifying circuit 11, an RF signal generating circuit 16, and transmission lines 61, 62, 63, and 64. The transmission lines 61, 62, 63, and 64 are, for example, coaxial cables, microstrip lines, or triflate lines, and have characteristic impedances.

The transmission device 1 is used to transmit various signals such as voice, video, and data to a base station in a mobile communication device, for example. In addition, the mobile communication unit also includes a receiving device for receiving a signal from the base station, but details of the receiving device are omitted.

Fig. 2 is a diagram showing an example of the band configuration of each RF signal transmitted by the transmitter according to the first embodiment of the present invention. Fig. 3 is a diagram schematically showing the band configuration shown in Fig. 2; In Fig. 3, the horizontal axis represents the frequency with "MHz" as the unit. In Fig. 3, rectangular frames marked with "BN-X" (where X is an integer such as 1, 2, 3, and 4) indicate the frequency range of a band of band number X.

1 to 3, the RF signal generation circuit 16 in the transmitter 1 generates a first signal belonging to a first frequency band and a second signal belonging to either the first frequency band or the second frequency band. . Here, the second frequency band is different from the first frequency band. In other words, the second frequency band does not overlap with the first frequency band. In addition, the first frequency band and the second frequency band may partially overlap each other.

In this embodiment, the RF signal generator circuit 16 belongs to the mid band (first frequency band) from 1695 MHz to 2025 MHz, and the input signal used for FDD (Frequency Division Duplex) communication ( RFin1) (first signal) and an input signal (second frequency band) belonging to the mid-band or high band (second frequency band) from 2300 MHz to 2690 MHz and used for TDD (Time Division Duplex) communication ( RFin2) (second signal) is generated.

The mid-band includes, for example, a band of band number 1 from 1920 MHz to 1980 MHz, a band of band number 2 from 1850 MHz to 1910 MHz, a band of band number 37 from 1910 MHz to 1930 MHz, and a band of band number 37 from 1880 MHz to It includes the band of band number 39 up to 1920 MHz, and the like.

Among the bands included in the mid-band, bands with band numbers 33, 34, 35, 36, 37, and 39 are used for TDD (Time Division Duplex) communication (see FIGS. 2 and 3). Among the bands included in the mid-band, bands other than the above, such as band numbers 1, 2, 66, and 70, are used for FDD (Frequency Division Duplex) communication (see FIGS. 2 and 3).

Transmission power in TDD communication is often larger than transmission power in FDD communication. In the present embodiment, in TDD communications, RF signals are transmitted with, for example, power class (PC: Power Class) 2 transmit power. On the other hand, in the communication of the FDD method, the RF signal is transmitted by the transmission power of PC 3, for example. Here, the transmit power of PC 2 and the transmit power of PC 3 are, for example, an antenna output of 26 dBm and an antenna output of 23 dBm, respectively.

The high band includes, for example, a band with band number 40 from 2300 MHz to 2400 MHz and a band with band number 41 from 2496 MHz to 2690 MHz. Bands with band numbers 40 and 41 included in the high band are used for TDD communication (see FIGS. 2 and 3).

A control unit (not shown) of the mobile communication device sets the band number to be used by the mobile communication device based on, for example, the country where the mobile communication device is used and the communication line operator to which the mobile communication device communicates. The control unit generates a control signal including designation of a band number based on the above settings, and outputs the generated control signal to the RF signal generation circuit 16 .

The RF signal generating circuit 16 modulates a transmission signal including voice, video, data, etc. based on a control signal received from the control unit of the mobile communication device, and generates input signals RFin1 and RFin2 for wireless transmission. do.

In addition, the RF signal generator circuit 16 outputs band information representing the frequency of the generated input signal RFin2 to the power amplifier circuit 11 .

In this embodiment, the RF signal generating circuit 16 outputs, for example, the band signal Sb1 to the power amplifier circuit 11 as band information. Here, the level of the band signal Sb1 becomes high level when the input signal RFin2 belongs to the high band, and becomes low level when the input signal RFin2 belongs to the mid band.

Accordingly, in the power amplifier circuit 11, the circuit configuration for the high band and the circuit configuration for the mid band can be switched according to whether the input signal RFin2 belongs to either the high band or the mid band.

In addition, the RF signal generator circuit 16 is not limited to a configuration in which the band signal Sb1 representing two values of high level and low level is output to the power amplifier circuit 11, and the RF signal generator circuit 16 has 3 A configuration may be used to output the band signal Sb1 representing values of 10 or more to the power amplifying circuit 11. As a result, in the power amplifier circuit 11, the circuit configuration can be switched in three stages or more.

Further, the RF signal generating circuit 16 may output frequency information indicating the frequency of the input signal RFin2 to the power amplifier circuit 11 as band information. As a result, in the power amplifier circuit 11, the circuit configuration can be continuously changed according to the frequency of the input signal RFin2.

The RF signal generation circuit 16 supplies the generated input signals RFin1 and RFin2 to transmission lines 61 and 62, respectively.

The power amplifier circuit 11 receives input signals RFin1 and RFin2 output from the RF signal generator circuit 16 through transmission lines 61 and 62, respectively, and transmits the input signals RFin1 and RFin2 to the base station. Amplify to the required level.

The power amplifier circuit 11 supplies an output signal RFout1 obtained by amplifying the input signal RFin1 to the transmission line 63 . In addition, the power amplifier circuit 11 supplies an output signal RFout2 obtained by amplifying the input signal RFin2 to the transmission line 64 . Output signals RFout1 and RFout2 are transmitted to a front end unit and an antenna (not shown) via, for example, transmission lines 63 and 64, respectively, and transmitted to the base station via the antenna. Details of the front end portion will be described later.

A basic example of the power amplifier circuit according to the first embodiment will be described. 4 is a diagram showing the configuration of a basic example of a power amplifier circuit according to the first embodiment of the present invention. As shown in FIG. 4, a basic example of the power amplifier circuit 11 according to the first embodiment (hereinafter sometimes referred to as a power amplifier circuit 11A) is a low-power MB (mid-band) amplifier circuit 102 (first amplifier circuit), a fixed adjustment circuit 103, a high-power broadband amplifier circuit 202 (second amplifier circuit), and a first variable adjustment circuit 203.

An input signal RFin1 is supplied to the RF signal input terminal 31 through a transmission line 61 . An input signal RFin2 is supplied to the RF signal input terminal 32 through a transmission line 62 . RF signal output terminals 36 and 37 are connected to transmission lines 63 and 64, respectively. The low-power MB amplifier circuit 102 and the high-power broadband amplifier circuit 202 are formed in the semiconductor chips 21 and 22, respectively.

The low-power MB amplifier circuit 102 amplifies the input signal RFin1 supplied through the RF signal input terminal 31, and generates amplified signals RF3p and RF3m (first amplified signal) having a first power. . In this embodiment, the low-power MB amplifier circuit 102 is a circuit that amplifies the input signal RFin1 to a transmittable level with the transmission power of PC 3, and targets a signal belonging to the mid-band as an amplification target. The low-power MB amplifier circuit 102 outputs the generated amplified signals RF3p and RF3m to the fixed adjustment circuit 103.

The fixed adjustment circuit 103 adjusts the impedance when the transmission line 63 is viewed from the low-power MB amplifier circuit 102. In other words, the fixed adjustment circuit 103 matches the impedance between the low-power MB amplifier circuit 102 and the transmission line 63. The adjustment circuit in some embodiments of the present invention has a role of an impedance matching circuit and a role of attenuating harmonic components of an integral multiple (eg, twice or more) of the frequency of a signal to be amplified by the amplifier circuit.

The high-power broadband amplifier circuit 202 amplifies the input signal RFin2 supplied through the RF signal input terminal 32, and amplifies the amplified signals RF4p and RF4m having a second power greater than the first power (second amplification). signal) is generated. In the present embodiment, the high-power broadband amplifier circuit 202 is a circuit that amplifies the input signal RFin2 to a transmittable level with the transmission power of PC 2, and targets signals belonging to the mid-band or high-band to be amplified. The high-power broadband amplifier circuit 202 outputs the generated amplified signals RF4p and RF4m to the first variable adjustment circuit 203 .

The first variable adjustment circuit 203 is formed between the high-power wideband amplifier circuit 202 and the circuit (first circuit) subsequent to the high-power wideband amplifier circuit 202. In this embodiment, the circuit following the high-power wideband amplifier circuit 202 is, for example, the transmission line 64. The first variable adjustment circuit 203 is configured to be able to adjust the first impedance when the transmission line 64 is viewed from the high-power broadband amplifier circuit 202 . In other words, the first variable adjustment circuit 203 matches the impedance between the high-power broadband amplifier circuit 202 and the transmission line 64 .

The high-power broadband amplifier circuit 202 and low-power MB amplifier circuit 102 in the power amplifier circuit 11A shown in Fig. 4 will be described in detail. Fig. 5 is a circuit diagram showing an example of a high-power broadband amplifier circuit and a low-power MB amplifier circuit according to the first embodiment of the present invention. Since the high-power wideband amplifier circuit 202 and the low-power MB amplifier circuit 102 have the same circuit configuration, the high-power wideband amplifier circuit 202 is representatively described here, and the low-power MB amplifier circuit 102 omit the explanation as much as possible.

As shown in Fig. 5, the high power wideband amplifier circuit 202 includes a driver stage single amplifier circuit 41, a stage matching circuit 42, and a power stage differential amplifier circuit 43. The driver stage single amplifier circuit 41 includes an input matching circuit 41a, an amplifier 41b, and a bias circuit 41c. The power stage differential amplifier circuit 43 includes amplifiers 43a and 43b and a bias circuit 43c.

The amplifiers 41b, 43a, and 43b are constituted by bipolar transistors such as, for example, heterojunction bipolar transistors (HBTs). Further, each of the amplifiers 41b, 43a, and 43b may be constituted by a FET (Field Effect Transistor). In this case, it is good to replace the base with the gate, the collector with the drain, and the emitter with the source.

The bias circuit 41c supplies a bias to the amplifier 41b. The bias circuit 43c supplies bias to the amplifiers 43a and 43b. Also, although not shown, a power source voltage is supplied to the amplifier 41b.

The *41 circuit input terminal 33 is connected to the transmission line 62, and the input signal RFin2 is supplied through the transmission line 62. The input matching circuit 41a has a first end and a second end connected to the circuit input terminal 33, and matches the impedance between the transmission line 62 and the amplifier 41b.

The amplifier 41b has an input terminal and an output terminal connected to the second terminal of the input matching circuit 41a. The amplifier 41b amplifies the input signal RFin2 input from the input terminal and outputs the amplified signal RFf from the output terminal.

The stage-to-stage matching circuit 42 matches the impedances between the amplifier 41b and the amplifiers 43a and 43b, and inputs the amplified signal RFf from the amplifier 41b and sets the amplified signal RFf out of phase with each other. It functions as a power divider that divides into different amplified signals (RFsp and RFsm).

The stage-to-stage matching circuit 42 includes a transformer 42a. The transformer 42a has a primary winding 42b and a secondary winding 42c.

The primary side winding 42b has a first end connected to the output terminal of the amplifier 41b and a second end connected to ground. The secondary winding 42c has a first end connected to the amplifier 43a, a neutral point receiving a bias supply from the bias circuit 43c, and a second end connected to the amplifier 43b, and the primary winding 42b ) and is coupled electromagnetically.

When the amplified signal RFf is input from the amplifier 41b to the first terminal of the primary winding 42b, the first and second terminals of the secondary winding 42c electromagnetically coupled to the primary winding 42b In this case, amplified signals RFsp and RFsm are respectively generated. A phase difference between the amplified signal RFsp and the amplified signal RFsm becomes about 180°. Further, the phase difference may deviate from 180° depending on the unevenness of the wire length of the circuit.

The amplifier 43a has an input terminal connected to the first end of the secondary side winding 42c and an output terminal connected to the circuit output terminal 34p. The amplifier 43a amplifies the amplification signal RFsp input from the input terminal, and outputs the amplification signal RF4p from the output terminal to the circuit output terminal 34p.

The amplifier 43b has an input terminal connected to the second end of the secondary side winding 42c and an output terminal connected to the circuit output terminal 34m. The amplifier 43b amplifies the amplification signal RFsm input from the input terminal, and outputs the amplification signal RF4m from the output terminal to the circuit output terminal 34m.

In addition, in the case of the low-power MB amplifier circuit 102, the input signal RFin1 is supplied to the circuit input terminal 33 through the transmission line 61. The input matching circuit 41a matches the impedance between the transmission line 61 and the amplifier 41b.

The amplifier 41b amplifies the input signal RFin1 input from the input terminal and outputs the amplified signal RFf from the output terminal.

The amplifier 43a amplifies the amplification signal RFsp input from the input terminal, and outputs the amplification signal RF3p from the output terminal to the circuit output terminal 34p. The amplifier 43b amplifies the amplification signal RFsm input from the input terminal, and outputs the amplification signal RF3m from the output terminal to the circuit output terminal 34m.

In addition, the high-power broadband amplifier circuit 202 and the low-power MB amplifier circuit 102 according to the present embodiment have a configuration in which an input signal is amplified by a two-stage amplifier circuit of a driver stage amplifier circuit and a power stage amplifier circuit. described, but is not limited thereto. The high-power broadband amplifier circuit 202 and the low-power MB amplifier circuit 102 may have a configuration in which an input signal is amplified by a one-stage amplifier circuit, or a configuration in which an input signal is amplified by three or more stages of amplifier circuits.

In addition, in the high-power wideband amplifier circuit 202 and the low-power MB amplifier circuit 102 according to the present embodiment, the driver stage single amplifier circuit 41 has explained the configuration in which a single-ended signal is amplified, but is not limited to this. no. By providing a differential amplification circuit instead of the driver stage single amplification circuit 41, the driver stage may also amplify the balanced signal. In this case, by installing a transformer as the input matching circuit 41a, for example, the input matching circuit 41a converts the input signal RFin1 or RFin2 into a balanced signal. Then, by providing two amplifiers 41b in parallel, the two signals constituting the balanced signal are respectively amplified. The two signals after amplification are converted into single-ended signals by, for example, a synthesizer, and supplied to the stage-to-stage matching circuit 42. In addition, it is not limited to the configuration in which the two signals after amplification are converted into single-ended signals by a synthesizer and then converted into balanced signals again by the transformer 42a in the stage-to-stage matching circuit 42, and the two signals may be supplied to the amplifiers 43a and 43b as balanced signals through matching circuits, respectively.

The first variable adjustment circuit 203 in the power amplifier circuit 11A shown in Fig. 4 will be described in detail. Fig. 6 is a circuit diagram showing a basic example of a first variable adjustment circuit according to the first embodiment of the present invention.

As shown in Fig. 6, the basic example of the first variable adjustment circuit 203 (hereinafter sometimes referred to as the first variable adjustment circuit 203A) is a broadband matching circuit 301 (fundamental wave variable adjustment circuit) and terminating circuit 402. The circuit input terminal 35p is connected to the circuit output terminal 34p in the high-power broadband amplifier circuit 202, and an amplification signal RF4p is supplied (see Fig. 5). The circuit input terminal 35m is connected to the circuit output terminal 34m in the high-power broadband amplifier circuit 202, and an amplification signal RF4m is supplied (see Fig. 5). The RF signal output terminal 37 is connected to the transmission line 64.

Termination circuit 402 attenuates harmonics of amplified signals RF4p and RF4m. The amplified signals RF4p and RF4m are transmitted to the wideband matching circuit 301 through the termination circuit 402. In this embodiment, the termination circuit 402 is, for example, an LC series circuit, and includes an inductor 411a and a capacitor 411b.

The inductor 411a has a first end and a second end connected to the circuit input terminal 35p. Capacitor 411b has a first end connected to the second end of inductor 411a and a second end connected to circuit input terminal 35m. In addition, the inductor 411a and the capacitor 411b may be connected interchangeably.

The wideband matching circuit 301 is configured to be able to adjust the first impedance with respect to the frequency of the fundamental wave of the amplified signals RF4p and RF4m. The amplified signals RF4p and RF4m are synthesized by the wideband matching circuit 301 and converted into an output signal RFout2. The output signal RFout2 is transmitted through the transmission line 64.

In this embodiment, the broadband matching circuit 301 includes a transformer 311, a capacitor 312, inductors 313, 314, and 315a, and a switch 315b. The transformer 311 has a primary winding 311a and a secondary winding 311b.

The transformer 311 functions as a power synthesizer that synthesizes the amplified signals RF4p and RF4m and generates an output signal RFout2 that is an amplified signal of the input signal RFin2. The primary side winding 311a of the transformer 311 has a first end connected to the circuit input terminal 35p and the first end of the inductor 411a, and the amplifiers 43a and 43b in the high-power broadband amplifier circuit 202 ) and a second terminal connected to circuit input terminal 35m and a second terminal of capacitor 411b. The secondary winding 311b has a first terminal connected to the capacitor 312 and a second terminal grounded, and is electromagnetically coupled to the primary winding 311a.

The capacitor 312 has a first end and a second end connected to a first end of the secondary side winding 311b. The inductor 314 has a first end connected to the second end of the capacitor 312 and a second end connected to the RF signal output terminal 37 . In this embodiment, the wideband matching circuit 301 includes the capacitor 312, but the wideband matching circuit 301 may not include the capacitor 312.

The inductor 313 has a first end connected to the second end of the capacitor 312 and a second end connected to ground.

Switch 315b has a first terminal and a second terminal connected to a second terminal of capacitor 312. Inductor 315a has a first end connected to the second end of switch 315b and a second end connected to ground.

The switch 315b switches between a high-frequency matching state and a low-frequency matching state of the wideband matching circuit 301 . Here, in the high-frequency matching state, the first impedance with respect to the frequency of the fundamental wave of the input signal RFin2 belonging to the high band is such that the amplifiers 43a and 43b in the high-power broadband amplifier circuit 202 operate efficiently. It is made of impedance. In the low-frequency matching state, the first impedance with respect to the frequency of the fundamental wave of the input signal RFin2 belonging to the mid-band is such that the amplifiers 43a and 43b in the high-power broadband amplifier circuit 202 operate efficiently. has been

In other words, in the high-frequency matching state, the impedance between the amplifiers 43a and 43b and the transmission line 64 in the high-power broadband amplification circuit 202 with respect to the frequency of the fundamental wave of the input signal RFin2 belonging to the high band are matched On the other hand, in the low-frequency matching state, the impedance is matched with respect to the frequency of the fundamental wave of the input signal RFin2 belonging to the mid-band.

In this embodiment, when the switch 315b receives the low-level band signal Sb1 from the RF signal generating circuit 16, it electrically insulates its first and second terminals and turns off. At this time, the wideband matching circuit 301 transitions to a low-frequency matching state. On the other hand, when the switch 315b receives the high-level band signal Sb1 from the RF signal generating circuit 16, its first and second terminals are electrically connected to be turned on. At this time, the wideband matching circuit 301 transitions to a high frequency matching state.

Alternatively, when the switch 315b is in an on state, the wideband matching circuit 301 may transition to a low frequency matching state, and when the switch 315b is in an off state, the wideband matching circuit 301 may transition to a high frequency matching state.

Note that the wideband matching circuit 301 and the terminating circuit 402 are examples, and the circuit configurations of the wideband matching circuit 301 and the terminating circuit 402 may have other circuit configurations.

Further, in the broadband matching circuit 301, a configuration in which the low-frequency matching state and the high-frequency matching state are switched by the switch 315b has been described, but is not limited thereto. The wideband matching circuit 301 may have, for example, a configuration including two or more switches in a configuration that receives a band signal Sb1 indicating three or more values. In this case, switching between three or more matching states can be performed by switching two or more switches based on the band signal Sb1. Further, a capacitor connected in series to the inductor 315a may be further provided in the broadband matching circuit 301. The LC resonant circuit including the inductor 315a and the capacitor attenuates a noise source (eg, harmonics or noise) output from the high-power broadband amplification circuit 202 or a noise signal input from the outside. The switch 315b switches between an on state and an off state depending on the power class of the transmission power, for example, it is turned on in power class 1.5 or 2, and turned off in power class 3.

Further, the wideband matching circuit 301 includes, for example, at least one of a variable capacitor capable of changing capacitance and a variable inductor capable of changing inductance in a configuration in which frequency information indicating the frequency of the input signal RFin2 is received as band information. It may be a composition. In this case, the matching state can be continuously changed according to the frequency of the input signal RFin2 by adjusting the capacitance of the variable capacitor and the inductance of the variable inductor based on the frequency information.

In addition, although the configuration in which the first variable adjustment circuit 203 matches the impedance between the high-power broadband amplifier circuit 202 and the transmission line 64 has been described, it is not limited thereto. The first variable adjustment circuit 203 may be configured to match the impedance between the high-power broadband amplifier circuit 202 and the front end or antenna.

Further, the circuit configuration of the broadband matching circuit 301 may be such that an inductor is provided instead of the capacitor 312, and two capacitors are provided instead of the inductors 315a and 313, respectively.

A modified example of the first variable adjustment circuit 203 in the power amplifier circuit 11A shown in Fig. 4 will be described. In the description of the modified example, a description of items common to the basic example will be omitted, and only different points will be described. In particular, about the same operation and effect by the same structure, it is not mentioned successively for each modified example.

7 is a circuit diagram showing a modified example of the first variable adjustment circuit according to the first embodiment of the present invention. As shown in Fig. 7, in a modified example of the first variable adjustment circuit 203 (hereinafter sometimes referred to as a first variable adjustment circuit 203B), a switch is provided in the terminating circuit and a switch is provided in the matching circuit. It is different from the 1st variable adjustment circuit 203A shown in FIG. 6 in that it does not become.

In this modified example, the first variable adjustment circuit 203B includes a matching circuit 302 and a wideband termination circuit 401 (harmonic variable adjustment circuit).

The broadband termination circuit 401 is configured to be able to adjust the first impedance with respect to the frequency of the harmonics of the amplified signals RF4p and RF4m. The amplified signals RF4p and RF4m are transmitted to the matching circuit 302 through the wideband termination circuit 401.

In this modified example, the broadband termination circuit 401 includes an inductor 411a, capacitors 411b and 412b, and a switch 412a.

The inductor 411a has a first end and a second end connected to the circuit input terminal 35p. Capacitor 411b has a first end connected to the second end of inductor 411a and a second end connected to circuit input terminal 35m.

Switch 412a has a first end and a second end connected to the second end of inductor 411a. Capacitor 412b has a first end connected to the second end of switch 412a and a second end connected to circuit input terminal 35m and the second end of capacitor 411b.

The switch 412a switches between a high-frequency attenuation state and a low-frequency attenuation state of the broadband termination circuit 401 . Here, in the high-frequency attenuation state, the first impedance to the frequency of the harmonics of the input signal RFin2 belonging to the high band is such that the harmonics are attenuated. In the low-frequency attenuation state, the first impedance to the frequency of the harmonics of the input signal RFin2 belonging to the mid-band is such that the harmonics are attenuated.

In this modification, when the switch 412a receives the low-level band signal Sb1 from the RF signal generating circuit 16, its first and second terminals are electrically connected to turn on. At this time, the broadband termination circuit 401 transitions to a low frequency attenuation state. On the other hand, when the switch 412a receives the high level band signal Sb1 from the RF signal generating circuit 16, it electrically insulates its first and second terminals and turns off. At this time, the broadband termination circuit 401 transitions to a high frequency attenuation state.

Alternatively, when the switch 412a is in an off state, the wideband termination circuit 401 may transition to a low frequency attenuation state, and when the switch 412a is in an on state, the wideband termination circuit 401 may transition to a high frequency attenuation state. Further, the inductor 411a, the capacitor 411b, and the capacitor 412b may be LC resonance circuits that attenuate a noise source (eg, harmonics) output from the high-power wideband amplifier circuit 202. The switch 412a switches between an on state and an off state depending on the power class of transmission power, for example, it is turned on in power class 1.5 or 2, and turned off in power class 3.

The matching circuit 302 matches impedances between the amplifiers 43a and 43b in the high-power broadband amplifier circuit 202 and the transmission line 64. The amplified signals RF4p and RF4m are synthesized by the matching circuit 302 and converted into an output signal RFout2. The output signal RFout2 is transmitted through the transmission line 64.

In this modified example, the matching circuit 302 includes a transformer 311, a capacitor 312, and inductors 313 and 314. The transformer 311 has a primary winding 311a and a secondary winding 311b. In this modification, the matching circuit 302 includes the capacitor 312, but the matching circuit 302 may not include the capacitor 312.

The primary side winding 311a of the transformer 311 has a first terminal connected to the circuit input terminal 35p and the first terminal of the inductor 411a, a neutral point connected to the voltage supply node VCC1, and a circuit input terminal ( 35m), a second terminal of capacitor 411b, and a second terminal connected to the second terminal of capacitor 412b. The secondary winding 311b has a first terminal connected to the capacitor 312 and a second terminal grounded, and is electromagnetically coupled to the primary winding 311a.

The capacitor 312 has a first end and a second end connected to a first end of the secondary side winding 311b. The inductor 314 has a first end connected to the second end of the capacitor 312 and a second end connected to the RF signal output terminal 37 .

The inductor 313 has a first end connected to the second end of the capacitor 312 and a second end connected to ground.

Note that the matching circuit 302 and the wideband termination circuit 401 are examples, and the circuit configurations of the matching circuit 302 and the wideband termination circuit 401 may be other circuit configurations.

Further, in the broadband termination circuit 401, a configuration in which a low-frequency attenuation state and a high-frequency attenuation state are switched by the switch 412a has been described, but is not limited thereto. The wideband termination circuit 401 may have, for example, a configuration including two or more switches in a configuration that receives a band signal Sb1 representing three or more values. In this case, switching between three or more attenuation states can be performed by switching two or more switches based on the band signal Sb1.

Further, the wideband termination circuit 401 may have, for example, a configuration including at least one of a variable capacitor and a variable inductor in a configuration that receives frequency information indicating the frequency of the input signal RFin2 as band information. In this case, the attenuation state may be continuously changed according to the frequency of the input signal RFin2 by adjusting the capacitance of the variable capacitor and the inductance of the variable inductor based on the frequency information.

Alternatively, the first variable adjustment circuit 203B may have a configuration including a broadband matching circuit 301 shown in FIG. 6 instead of the matching circuit 302 .

The fixed adjustment circuit 103 in the power amplifier circuit 11A shown in Fig. 4 will be described in detail. 8 is a circuit diagram showing an example of a fixed adjustment circuit according to the first embodiment of the present invention.

As shown in FIG. 8 , the fixed adjustment circuit 103 includes a matching circuit 302 and a terminating circuit 402 . The circuit input terminal 35p is connected to the circuit output terminal 34p in the low-power MB amplifier circuit 102, and an amplification signal RF3p is supplied (see Fig. 5). The circuit input terminal 35m is connected to the circuit output terminal 34m in the low-power MB amplifier circuit 102, and an amplification signal RF3m is supplied (see Fig. 5).

The termination circuit 402 attenuates the harmonics of the amplified signals RF3p and RF3m. The amplified signals RF3p and RF3m are transmitted to the matching circuit 302 through the termination circuit 402.

The matching circuit 302 matches impedances between the amplifiers 43a and 43b in the low-power MB amplifier circuit 102 and the transmission line 63. The amplified signals RF3p and RF3m are synthesized by the matching circuit 302 and converted into an output signal RFout1. The output signal RFout1 is transmitted through the transmission line 63.

Further, the power amplifier circuit 11A amplifies the input signal RFin1 to a transmittable level with the transmit power of PC 3, and amplifies the input signal RFin2 to a transmittable level with the transmit power of PC 2. As described above, a configuration in which the power amplifier circuit amplifies the input signal to a transmittable level with the transmission power of any one of PC 1.5, PC 2, and PC 3 is also possible. Here, the transmission power of PC 1.5 is an antenna output of 29 dBm, for example.

Fig. 9 is a diagram showing the configuration in the case where the basic example of the power amplifier circuit according to the first embodiment of the present invention can be applied to transmission using the transmission power of PC 1.5. As shown in Fig. 9, the power amplification circuit 11E is a set of a high-power broadband amplification circuit 202 and a first variable adjustment circuit 203 (hereafter referred to as a high-power amplification circuit) compared to the power amplification circuit 11A shown in Fig. 4. Sometimes referred to as a system) is further provided.

In the power amplification circuit 11E, two high power amplification systems are installed in parallel. An input signal RFin5 to be amplified divided into two is supplied to the transmission lines 62A and 62B, respectively.

One high power amplification system (hereinafter sometimes referred to as a first high power amplification system) of the two high power amplification systems is connected to a transmission line 62A via an RF signal input terminal 32A on the input side; On the output side, it is connected to the transmission line 64A via the RF signal output terminal 37A.

Of the two high power amplification systems, the other high power amplification system (hereinafter sometimes referred to as a second high power amplification system) is connected to a transmission line 62B via an RF signal input terminal 32B on the input side; On the output side, it is connected to the transmission line 64B via the RF signal output terminal 37B.

The first high-power amplifier system amplifies the input signal RFin5 supplied through the transmission line 62A, and supplies the output signal RFout5 as the amplified signal to the transmission line 64A. The second high-power amplifier system amplifies the input signal RFin5 supplied through the transmission line 62B and supplies the output signal RFout5 as the amplified signal to the transmission line 64B.

Each of the output signals RFout5 supplied to the transmission lines 64A and 64B, respectively, is synthesized in a subsequent circuit. As a result, the input signal RFin5 is amplified to a level that can be transmitted by the transmission power of PC 1.5.

In addition, in the power amplifier circuit 11E, when the input signal RFin1 is supplied to the low-power MB amplifier circuit 102 through the transmission line 61, the power amplifier circuit 11E converts the input signal RFin1 to PC 3. It can be amplified to a transmittable level by the transmit power. In addition, when the input signal RFin2 is supplied to the first high power amplification system or the second high power amplification system through the transmission line 62A or 62B, the power amplifier circuit 11E converts the input signal RFin2 to PC 2. It can be amplified to a transmittable level by the transmit power.

(Modified Example 1 of Power Amplifier Circuit 11)

Modification 1 of the power amplifier circuit according to the first embodiment will be described. Fig. 10 is a diagram showing the configuration of Modification 1 of the power amplifier circuit according to the first embodiment of the present invention. As shown in Fig. 10, in Modification 1 of the power amplifier circuit 11 according to the first embodiment (hereinafter sometimes referred to as a power amplifier circuit 11B), two amplifier circuits are formed on one semiconductor chip. This point is different from the basic example of the power amplifier circuit 11 shown in Fig. 4, that is, the power amplifier circuit 11A.

In this modified example, the low-power MB amplifier circuit 102 and the high-power broadband amplifier circuit 202 are formed on the semiconductor chip 29 . In this way, by forming elements constituting each of the low-power MB amplifier circuit 102 and the high-power wideband amplifier circuit 202 on the same substrate, variation in characteristics of these elements can be suppressed. Further, for example, by connecting the low-power MB amplifier circuit 102 and the high-power broadband amplifier circuit 202 to a common ground, chip shrinking that reduces the size of the semiconductor chip 29 can be realized.

(Modified Example 2 of Power Amplifier Circuit 11)

Modification 2 of the power amplifier circuit according to the first embodiment will be described. Fig. 11 is a diagram showing the configuration of Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention. As shown in Fig. 11, in Modification 2 of the power amplifier circuit 11 according to the first embodiment (hereinafter sometimes referred to as a power amplifier circuit 11C), the amplifier circuit amplifies the input signal by a single method. This point is different from the basic example of the power amplifier circuit 11 shown in Fig. 4, that is, the power amplifier circuit 11A.

In this modified example, the power amplifier circuit 11C includes the low power MB amplifier circuit 112 (first amplifier circuit), the fixed adjustment circuit 113, the high power wideband amplifier circuit 212 (second amplifier circuit), , a first variable adjustment circuit 213 is provided. The low-power MB amplifier circuit 112 and the high-power broadband amplifier circuit 212 are formed in the semiconductor chips 21 and 22, respectively.

The low-power MB amplifier circuit 112 amplifies the mid-band input signal RFin1 supplied through the RF signal input terminal 31 and generates an amplified signal RF3 (first amplified signal) having a first power. do. In this modified example, the low-power MB amplifier circuit 112 is a circuit that amplifies the input signal RFin1 to a transmittable level with the transmission power of PC 3, and targets a signal belonging to the mid-band as an amplification target. The low power MB amplifier circuit 112 outputs the generated amplification signal RF3 to the fixed adjustment circuit 113 .

The fixed adjustment circuit 113 adjusts the impedance when the transmission line 63 is viewed from the low-power MB amplifier circuit 112. In other words, the fixed adjustment circuit 113 matches the impedance between the low-power MB amplifier circuit 112 and the transmission line 63.

The high-power broadband amplifier circuit 212 amplifies a mid-band or high-band input signal RFin2 supplied through the RF signal input terminal 32, and generates an amplified signal RF4 having a second power (second amplified signal RFin2). ) to create In this modified example, the high-power broadband amplifier circuit 212 is a circuit that amplifies the input signal RFin2 to a transmittable level with the transmission power of PC 2, and targets a signal belonging to the mid-band or high-band as an amplification target. The high-power broadband amplifier circuit 212 outputs the generated amplification signal RF4 to the first variable control circuit 213 .

The first variable adjustment circuit 213 is configured to be able to adjust the first impedance when the transmission line 64 is viewed from the high-power broadband amplifier circuit 212 .

The high-power broadband amplifier circuit 212 and low-power MB amplifier circuit 112 in the power amplifier circuit 11C shown in Fig. 11 will be described in detail. Fig. 12 is a circuit diagram showing an example of a high-power broadband amplifier circuit and a low-power MB amplifier circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention. Since the high-power wideband amplifier circuit 212 and the low-power MB amplifier circuit 112 have the same circuit configuration, the high-power wideband amplifier circuit 212 is representatively described here, and the low-power MB amplifier circuit 112 omit the explanation as much as possible.

As shown in Fig. 12, the high-power broadband amplifier circuit 212 includes a driver stage single amplifier circuit 41, an interstage matching circuit 44, and a power stage single amplifier circuit 45. The driver stage single amplifier circuit 41 has the same circuit configuration as the driver stage single amplifier circuit 41 in the high power wideband amplifier circuit 202 shown in FIG. The power stage single amplifier circuit 45 includes an amplifier 45a and a bias circuit 45b.

The amplifier 45a is constituted by, for example, a bipolar transistor such as HBT. Alternatively, the amplifier 45a may be constituted by an FET. The bias circuit 45b supplies a bias to the amplifier 45a. Also, although not shown, a power source voltage is supplied to the amplifier 45a.

The input signal RFin2 is supplied to the circuit input terminal 33 through the transmission line 62 . The stage-to-stage matching circuit 44 is constituted by, for example, a combination of a capacitor and an inductor, and has a first stage and a second stage connected to the output terminal of the amplifier 41b. The stage-to-stage matching circuit 44 matches the impedance between the amplifier 41b and the amplifier 45a.

The amplifier 45a has an input terminal connected to the second terminal of the stage-to-stage matching circuit 44 and an output terminal connected to the circuit output terminal 34. The amplifier 45a amplifies the amplification signal RFf input from the input terminal, and outputs the amplification signal RF4 to the circuit output terminal 34 from the output terminal.

In addition, in the case of the low-power MB amplifier circuit 112, the input signal RFin1 is supplied to the circuit input terminal 33 through the transmission line 61. The amplifier 41b amplifies the input signal RFin1 input from the input terminal and outputs the amplified signal RFf from the output terminal.

The amplifier 45a amplifies the amplification signal RFf input from the input terminal, and outputs the amplification signal RF3 to the circuit output terminal 34 from the output terminal.

In addition, the high-power broadband amplifier circuit 212 and the low-power MB amplifier circuit 112 according to this modified example have a structure in which an input signal is amplified by a two-stage amplifier circuit of a driver stage amplifier circuit and a power stage amplifier circuit. described, but is not limited thereto. The high-power broadband amplifier circuit 212 and the low-power MB amplifier circuit 112 may have a configuration in which an input signal is amplified by a single-stage amplifier circuit, or a configuration in which an input signal is amplified by three or more stages of amplifier circuits.

The first variable adjustment circuit 213 in the power amplifier circuit 11C shown in Fig. 11 will be described in detail. Fig. 13 is a circuit diagram showing a basic example of a first variable adjustment circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.

As shown in Fig. 13, the basic example of the first variable adjustment circuit 213 (hereinafter sometimes referred to as the first variable adjustment circuit 213A) is a broadband matching circuit 306 (fundamental wave variable adjustment circuit) and terminating circuit 407. The circuit input terminal 35 is connected to the circuit output terminal 34 of the high-power broadband amplifier circuit 212, and an amplification signal RF4 is supplied (see Fig. 12).

The termination circuit 407 attenuates harmonics of the amplified signal RF4. The amplified signal RF4 is transmitted to the wideband matching circuit 306 through the termination circuit 407. In this basic example, the termination circuit 407 is, for example, an LC series circuit, and includes an inductor 421a and a capacitor 421b.

The inductor 421a has a first end and a second end connected to the circuit input terminal 35 . Capacitor 421b has a first end connected to the second end of inductor 421a and a second end connected to ground.

The wideband matching circuit 306 is configured to be able to adjust the first impedance with respect to the frequency of the fundamental wave of the amplification signal RF4. The amplified signal RF4 is converted into an output signal RFout2 through the wideband matching circuit 306 and transmitted to the transmission line 64.

In this basic example, the broadband matching circuit 306 includes, for example, inductors 321 and 323, capacitors 322, 324a, 325, and 326, and a switch 324b.

The inductor 321 has a first end and a second end connected to the circuit input terminal 35 and the first end of the inductor 421a. The capacitor 322 has a first end connected to the second end of the inductor 321 and a second end connected to ground.

The inductor 323 has a first end and a second end connected to the second end of the inductor 321 and the first end of the capacitor 322 . The capacitor 326 has a first terminal connected to the second terminal of the inductor 323 and a second terminal connected to the RF signal output terminal 37 .

The capacitor 325 has a first end connected to the second end of the inductor 323 and the first end of the capacitor 326, and a second end connected to ground.

The switch 324b has a first terminal and a second terminal connected to the second terminal of the inductor 323 and the first terminal of the capacitor 326. Capacitor 324a has a first end connected to the second end of switch 324b and a second end connected to ground.

The switch 324b switches between a high-frequency matching state and a low-frequency matching state of the wideband matching circuit 306 . When the switch 324b receives the low-level band signal Sb1 from the RF signal generating circuit 16, its first and second terminals are electrically connected to be turned on. At this time, the wideband matching circuit 306 transitions to a low-frequency matching state. On the other hand, when the switch 324b receives the high-level band signal Sb1 from the RF signal generating circuit 16, it electrically insulates its first and second terminals and turns off. At this time, the wideband matching circuit 306 transitions to a high-frequency matching state.

Alternatively, when the switch 324b is in an off state, the wideband matching circuit 306 may transition to a low frequency matching state, and when the switch 324b is in an on state, the wideband matching circuit 306 may transition to a high frequency matching state. In addition, the broadband matching circuit 306 may further include an inductor connected in series with the capacitor 324a. The LC resonant circuit including the capacitor 324a and the inductor attenuates a noise source (eg, harmonics or noise) output from the high-power broadband amplifier circuit 212 or a noise signal coming from the outside. The switch 324b is switched between an on state and an off state according to the power class of transmission power, for example, it is turned on in power class 1.5 or 2, and turned off in power class 3.

Note that the wideband matching circuit 306 and the terminating circuit 407 are examples, and the circuit configurations of the wideband matching circuit 306 and the terminating circuit 407 may be different circuit configurations.

Further, the broadband matching circuit 306 may have a configuration including two or more switches in a configuration that receives, for example, a band signal Sb1 indicating three or more values. In this case, switching between three or more matching states can be performed by switching two or more switches based on the band signal Sb1.

Further, the wideband matching circuit 306 may have, for example, a configuration including at least one of a variable capacitor and a variable inductor in a configuration that receives frequency information indicating the frequency of the input signal RFin2 as band information. In this case, the matching state can be continuously changed according to the frequency of the input signal RFin2 by adjusting the capacitance of the variable capacitor and the inductance of the variable inductor based on the frequency information.

A modified example of the first variable adjustment circuit 213 in the power amplifier circuit 11C shown in Fig. 11 will be described. Fig. 14 is a circuit diagram showing a modified example of the first variable adjustment circuit in modified example 2 of the power amplifier circuit according to the first embodiment of the present invention. As shown in Fig. 14, in the modified example of the first variable adjustment circuit 213 (hereinafter sometimes referred to as the first variable adjustment circuit 213B), a switch is provided in the terminal circuit and a switch is provided in the matching circuit. It differs from the first variable adjustment circuit 213A shown in FIG. 13 in that it is not.

In this modified example, the first variable adjustment circuit 213B includes a matching circuit 307 and a wideband termination circuit 406 (harmonic variable adjustment circuit).

The broadband termination circuit 406 is configured to be able to adjust the first impedance with respect to the frequency of the harmonics of the amplification signal RF4. The amplified signal RF4 is transmitted to the matching circuit 307 through the wideband termination circuit 406.

In this variant, the broadband termination circuit 406 includes an inductor 421a, capacitors 421b and 422b, and a switch 422a.

The inductor 421a has a first end and a second end connected to the circuit input terminal 35 . Capacitor 421b has a first end connected to the second end of inductor 421a and a second end connected to ground.

The switch 422a has a first end and a second end connected to the second end of the inductor 421a. Capacitor 422b has a first end connected to the second end of switch 422a and a second end connected to ground.

The switch 422a switches between a high-frequency attenuation state and a low-frequency attenuation state of the broadband termination circuit 406 . When the switch 422a receives the low-level band signal Sb1 from the RF signal generating circuit 16, its first terminal and second terminal are electrically connected to be turned on. At this time, the broadband termination circuit 406 transitions to a low frequency attenuation state. On the other hand, when the switch 422a receives the high level band signal Sb1 from the RF signal generating circuit 16, it electrically insulates its first and second terminals and turns off. At this time, the broadband termination circuit 406 transitions to a high frequency attenuation state.

Alternatively, when the switch 422a is in an off state, the wideband termination circuit 406 may transition to a low frequency attenuation state, and when the switch 422a is in an on state, the wideband termination circuit 406 may transition to a high frequency attenuation state. In addition, the inductor 421a, the capacitor 421b, and the capacitor 422b may be LC resonance circuits that attenuate a noise source (eg, harmonics, etc.) output from the high-power wideband amplifier circuit 212. The switch 422a switches between an on state and an off state according to the power class of transmission power, for example, it is on in power class 1.5 or 2 and off in power class 3.

The matching circuit 307 matches the impedance between the amplifier 45a in the high-power broadband amplifier circuit 212 and the transmission line 64. The amplified signal RF4 is converted into an output signal RFout2 through the matching circuit 307 and transmitted to the transmission line 64.

In this modified example, the matching circuit 307 includes inductors 321 and 323 and capacitors 322 , 325 and 326 .

The inductor 321 has a first end and a second end connected to the circuit input terminal 35 and the first end of the inductor 421a. The capacitor 322 has a first end connected to the second end of the inductor 321 and a second end connected to ground.

The inductor 323 has a first end and a second end connected to the second end of the inductor 321 and the first end of the capacitor 322 . The capacitor 326 has a first terminal connected to the second terminal of the inductor 323 and a second terminal connected to the RF signal output terminal 37 .

The capacitor 325 has a first end connected to the second end of the inductor 323 and the first end of the capacitor 326, and a second end connected to ground.

Note that the matching circuit 307 and the wideband termination circuit 406 are examples, and the circuit configurations of the matching circuit 307 and the wideband termination circuit 406 may be other circuit configurations.

Further, the broadband termination circuit 406 may have a configuration including two or more switches in a configuration that receives, for example, a band signal Sb1 indicating three or more values. In this case, switching between three or more attenuation states can be performed by switching two or more switches based on the band signal Sb1.

Further, the wideband termination circuit 406 may have, for example, a configuration including at least one of a variable capacitor and a variable inductor in a configuration that receives frequency information indicating the frequency of the input signal RFin2 as band information. In this case, the attenuation state may be continuously changed according to the frequency of the input signal RFin2 by adjusting the capacitance of the variable capacitor and the inductance of the variable inductor based on the frequency information.

Alternatively, the first variable adjustment circuit 213B may have a configuration including a wideband matching circuit 306 shown in FIG. 13 instead of the matching circuit 307 .

The fixed adjustment circuit 113 in the power amplifier circuit 11C shown in Fig. 11 will be described in detail. Fig. 15 is a circuit diagram showing an example of a fixed adjustment circuit in Modification Example 2 of the power amplifier circuit according to the first embodiment of the present invention.

As shown in FIG. 15 , the fixed adjustment circuit 113 includes a matching circuit 307 and a terminating circuit 407 . The circuit input terminal 35 is connected to the circuit output terminal 34 of the low-power MB amplifier circuit 112, and an amplification signal RF3 is supplied (see Fig. 12).

The termination circuit 407 attenuates harmonics of the amplified signal RF3. The amplified signal RF3 is transmitted to the matching circuit 307 through the terminating circuit 407.

The matching circuit 307 matches the impedance between the amplifier 45a in the low-power MB amplifier circuit 112 and the transmission line 63. The amplified signal RF3 is converted into an output signal RFout1 through the matching circuit 307 and transmitted to the transmission line 63.

In this way, the configuration of the amplifier circuit can be simplified by the configuration of amplifying the input signal in a single method in the low power MB amplifier circuit 112 and the high power broadband amplifier circuit 212, so that the circuit size of the amplifier circuit can be reduced. can

Further, although the configuration in which the low-power MB amplifier circuit 112 and the high-power wideband amplifier circuit 212 are formed in the semiconductor chips 21 and 22, respectively, has been described, the low-power MB amplifier circuit 112 and the high-power wideband amplifier circuit 212 may be formed on one semiconductor chip.

(Modified Example 3 of Power Amplifier Circuit 11)

Modification 3 of the power amplifier circuit according to the first embodiment will be described. Fig. 16 is a diagram showing the configuration of Modification Example 3 of the power amplifier circuit according to the first embodiment of the present invention. As shown in Fig. 16, modified example 3 of the power amplifier circuit 11 according to the first embodiment (hereinafter sometimes referred to as a power amplifier circuit 11D) has an amplifier circuit that amplifies an input signal belonging to the mid-band. It is different from the basic example of the power amplifier circuit 11 shown in Fig. 4, that is, the power amplifier circuit 11A, in that the input signal is amplified by a single method.

In this modified example, the power amplifier circuit 11D includes a low-power MB amplifier circuit 112, a fixed adjustment circuit 113, a high-power broadband amplifier circuit 202, and a first variable adjustment circuit 203. . The low-power MB amplifier circuit 112 and the high-power broadband amplifier circuit 202 are formed in the semiconductor chips 21 and 22, respectively.

In this way, the input signal RFin2 can be amplified to a level that can be transmitted by the transmission power of PC 2 by the configuration using the power stage differential amplifier circuit 43, which is easy to synthesize power in the high-power broadband amplifier circuit 202. can

In addition, although the configuration in which the low-power MB amplifier circuit 112 and the high-power wideband amplifier circuit 202 are formed in the semiconductor chips 21 and 22, respectively, has been described, the low-power MB amplifier circuit 112 and the high-power wideband amplifier circuit 202 may be formed on one semiconductor chip.

Further, in the transmitter 1 according to the first embodiment, a configuration in which the first frequency band is a mid-band has been described, but it is not limited thereto. Even if the first frequency band is configured as another band such as a low band of 1000 MHz or less, a low mid band around 1500 MHz, or an ultra high band from 3000 MHz to 5000 MHz good night.

Further, in the transmission device 1 according to the first embodiment, a configuration in which the second frequency band is a high band has been described, but it is not limited thereto. The second frequency band may be another band such as a low band, a low mid band, or an ultra high band.

[Tasks and action effects]

17 is a diagram showing an example of a power amplifier circuit according to a reference example. As shown in Fig. 17, the power amplifier circuit according to the reference example includes a switch 901 and amplifier circuits 902, 903, and 904, for example.

The switch 901 receives, for example, an input signal R1 belonging to the mid-band, and the input signal R1 is a signal to be transmitted by the transmission power of PC 3 (hereinafter referred to as an input signal R3). Yes), the input signal R3 is output to the amplifier circuit 902. Further, the switch 901, for example, converts the input signal R4 when the input signal R1 is a signal to be transmitted by the transmission power of PC 2 (hereinafter sometimes referred to as input signal R4). output to the amplifier circuit 903.

The amplifier circuit 902 receives the input signal R3 from the switch 901 and amplifies the input signal R3 to a transmittable level by the transmission power of the PC 3 . The amplifier circuit 903 receives the input signal R4 from the switch 901 and amplifies the input signal R4 to a transmittable level with the transmission power of PC2. The amplifier circuit 904 receives, for example, the input signal R2 belonging to the high band, which is a signal to be transmitted with the transmission power of PC 2, and receives the input signal R2 up to a level that can be transmitted with the transmission power of PC 2. ) is amplified.

18 is a diagram showing an example of a change in power efficiency with respect to the frequency of an input signal in the power amplifier circuit according to the first embodiment of the present invention. In Fig. 18, the vertical axis represents the power efficiency with a unit of "%", and the horizontal axis represents the frequency with a unit of "MHz". Here, the power efficiency is expressed as a percentage of the ratio of the output power of the amplifier to the power supplied from the power supply to the amplifier, for example. The higher the power efficiency of the amplifier, the less wasted power in the amplifier.

As shown in Figs. 17 and 18, the efficiency curves MBPC 3r, MBPC 2r, and HBPC 2r represent frequency changes in the power efficiency of the amplifier circuits 902, 903, and 904, respectively. Each of the amplifier circuits 902, 903, and 904 has a narrow frequency band in which they operate efficiently. For this reason, in the power amplifier circuit according to the reference example, the input signals R3, R4, and R2 are amplified by amplifier circuits 902, 903, and 904, respectively. In such a configuration in which three amplifying circuits are formed, the circuit scale increases, which is not preferable.

However, as a configuration in which the input signals R3, R4, and R2 are amplified by two amplifier circuits, the input signal R2 is amplified by the amplifier circuit 904 and the input signals R3 and R4 are amplified by one amplifier circuit. A configuration is considered. However, in general, in an amplification circuit, if the load impedance is set so that the power efficiency when transmitting is increased by the transmission power of PC 3, the power efficiency at the time of transmission is lowered by the transmission power of PC 2. On the other hand, if the load impedance is set so that the power efficiency when transmitting with the transmission power of PC 2 increases, the power efficiency at the time of transmission with the transmission power of PC 3 decreases. For this reason, setting the load impedance so that the input signal R4 can be amplified to a transmittable level by the transmit power of PC 2, for example, is not preferable because power efficiency when amplifying the input signal R3 is lowered. not.

On the other hand, in the power amplifier circuit 11, the low-power MB amplifier circuit 102 amplifies the input signal RFin1 belonging to the mid-band, and amplifies the input signal RFin1 to a level that can be transmitted by the transmission power of PC 3. . The high-power wideband amplifier circuit 202 amplifies the input signal RFin2 belonging to the mid-band or high-band, and amplifies the input signal RFin2 to a level that can be transmitted by the transmission power of PC2. The first variable adjustment circuit 203 is formed between the high power wideband amplifier circuit 202 and the transmission line 64, and the first impedance when the transmission line 64 is viewed from the high power wideband amplifier circuit 202 is configured to be adjustable.

An efficiency curve (MBHBPC 2) shown in FIG. 18 represents, for example, a frequency change of the power efficiency of the high-power wideband amplifier circuit 202. In the power amplifier circuit 11, load impedance is set such that power efficiency increases when transmitting with the transmission power of the PC 2 to the high-power broadband amplifier circuit 202, for example. In addition, by combining the high-power wideband amplifier circuit 202 with the first variable adjustment circuit 203, the frequency band in which the high-power wideband amplifier circuit 202 operates efficiently is expanded from the mid-band to the high-band, thereby increasing the efficiency curve (MBPC 2r). and HBPC 2r) can realize the same degree of power efficiency.

[Second Embodiment]

A transmission device according to the second embodiment will be described. After the second embodiment, descriptions of items common to those of the first embodiment will be omitted, and only differences will be described. In particular, about the same operation and effect by the same structure, it is not mentioned successively for every embodiment.

In the transmission device according to the first embodiment, the RF signal belonging to the high band is transmitted by the transmission power of PC2. On the other hand, the transmitter according to the second embodiment differs from the transmitter according to the first embodiment in that the RF signal belonging to the high band is transmitted with the transmission power of PC 2 or PC 3.

19 is a diagram showing an example of the band configuration of each RF signal transmitted by the transmitter according to the second embodiment of the present invention. Fig. 20 is a diagram schematically showing the band configuration shown in Fig. 19; In addition, the viewing direction of FIGS. 19 and 20 is the same as that of FIGS. 2 and 3 , respectively.

Compared to the band configuration shown in FIG. 2, a band with band number 7 from 2500 MHz to 2570 MHz is further added to the band configuration shown in FIG. 19 in the high band. Accordingly, a band BN-7 is added in FIG. 20 compared to the schematic diagram of the band configuration shown in FIG. 3 . The band of band number 7 is used for FDD communication.

As shown in Figs. 1, 19 and 20, in the transmitter 1 according to the second embodiment, the RF signal generating circuit 16 transmits the first signal belonging to the first frequency band or the second frequency and the first frequency band or A second signal belonging to the second frequency band is generated.

In the present embodiment, the RF signal generator circuit 16 includes an input signal RFin3 (first signal) belonging to the mid-band (first frequency band) or high band (second frequency band) and an input signal (first signal) belonging to the mid-band or high band ( RFin2) (second signal) is generated.

Specifically, the RF signal generating circuit 16 modulates a transmission signal based on a control signal received from the control unit of the mobile communication device, and generates input signals RFin3 and RFin2 for radio transmission. The RF signal generating circuit 16 supplies the generated input signals RFin3 and RFin2 to transmission lines 61 and 62, respectively.

In addition, the RF signal generator circuit 16 outputs band information indicating the frequency of the generated input signals RFin3 and RFin2 to the power amplifier circuit 12 .

In this embodiment, the RF signal generating circuit 16 outputs, for example, the band signals Sb1 and Sb2 to the power amplifier circuit 12 as band information. Here, the level of the band signal Sb2 becomes high level when the input signal RFin3 belongs to the high band, and becomes low level when the input signal RFin3 belongs to the mid band.

In addition, the RF signal generator circuit 16 is not limited to a configuration in which the band signal Sb2 representing two values of high level and low level is output to the power amplifier circuit 12, and the RF signal generator circuit 16 has 3 A configuration may be used to output the band signal Sb2 representing values equal to or more than 10 to the power amplifying circuit 12. Further, the RF signal generating circuit 16 may output frequency information indicating the frequency of the input signal RFin3 to the power amplifier circuit 12 as band information.

A power amplifier circuit according to the second embodiment will be described. Fig. 21 is a diagram showing the configuration of a power amplifier circuit according to the second embodiment of the present invention. As shown in Fig. 21, the power amplifier circuit 12 according to the second embodiment includes the low power wideband amplifier circuit 122 and the second variable adjustment circuit instead of the low power MB amplifier circuit 102 and the fixed adjustment circuit 103. 123 is different from the power amplifier circuit 11 according to the first embodiment (see Fig. 4).

An input signal RFin3 is supplied to the RF signal input terminal 31 through a transmission line 61 . The low power wideband amplifier circuit 122 is formed on the semiconductor chip 23 .

The low-power wideband amplifier circuit 122 amplifies the input signal RFin3 supplied through the RF signal input terminal 31, and generates amplified signals RF5p and RF5m having a first power smaller than the second power (first amplification signal). signal) is generated. In this embodiment, the low-power wideband amplifier circuit 122 is a circuit that amplifies the input signal RFin3 to a transmittable level with the transmission power of PC 3, and targets signals belonging to the mid-band or high-band to be amplified. The low power wideband amplifier circuit 122 outputs the generated amplified signals RF5p and RF5m to the second variable control circuit 123 .

The low power wideband amplifier circuit 122 has the same circuit configuration as the low power MB amplifier circuit 102 and the high power wideband amplifier circuit 202, for example, and includes a driver stage single amplifier circuit 41 and A matching circuit 42 and a power stage differential amplifier circuit 43 are included (see FIG. 5).

The second variable adjustment circuit 123 is formed between the low-power wideband amplifier circuit 122 and a circuit (second circuit) subsequent to the low-power wideband amplifier circuit 122. In this embodiment, the circuit following the low-power wideband amplifier circuit 122 is, for example, the transmission line 63. The second variable adjustment circuit 123 is configured to be capable of adjusting the second impedance when the transmission line 63 is viewed from the low power wideband amplifier circuit 122 .

The second variable adjustment circuit 123 has, for example, the same circuit configuration as the first variable adjustment circuit 203A, and can adjust the second impedance with respect to the frequency of the fundamental wave of the amplified signals RF5p and RF5m. It includes a wideband matching circuit 301 and a termination circuit 402 configured to (see FIG. 6).

Further, the second variable adjustment circuit 123 may have a configuration including the matching circuit 302 and the broadband termination circuit 401 configured to be able to adjust the second impedance with respect to the frequency of the harmonics of the amplified signals RF5p and RF5m. OK (see FIG. 7). Further, the second variable adjustment circuit 123 may have a structure including a wideband matching circuit 301 (see Fig. 6) and a wideband termination circuit 401 (see Fig. 7).

Further, in the power amplification circuit 12 according to the second embodiment, the low power wideband amplification circuit 122 includes the driver stage single amplification circuit 41, the stage matching circuit 42, and the power stage differential amplification circuit 43 Although the configuration including (see FIG. 5) has been described, it is not limited thereto. The low-power wideband amplifier circuit 122 may have, for example, a configuration including a driver stage single amplifier circuit 41, an interstage matching circuit 44, and a power stage single amplifier circuit 45 (see Fig. 12). .

In this case, the second variable adjusting circuit 123 includes, for example, a wideband matching circuit 306 and a terminating circuit 407 (see Fig. 13). Further, the second variable adjustment circuit 123 may have a configuration including a matching circuit 307 and a wideband termination circuit 406 (see Fig. 14), or a wideband matching circuit 306 (see Fig. 13) and a wideband termination circuit. A configuration including the circuit 406 (see Fig. 14) may be used.

In addition, although the configuration in which the low-power wideband amplifier circuit 122 and the high-power wideband amplifier circuit 202 are formed on the semiconductor chips 23 and 22, respectively, has been described, the low-power wideband amplifier circuit 122 and the high-power wideband amplifier circuit 202 may be formed on one semiconductor chip.

[Third Embodiment]

A transmission device according to the third embodiment will be described.

In the transmission device according to the first embodiment, the RF signal belonging to the high band is transmitted with the transmit power of PC 2, and the RF signal belonging to the mid band is transmitted with the transmit power of PC 2 or PC 3. On the other hand, in the transmitter according to the third embodiment, the RF signal belonging to the high band is transmitted by the transmission power of PC 2 or PC 3, and the RF signal belonging to the mid-band is transmitted by the transmission power of PC 3. It is different from the transmission device according to one embodiment.

As shown in Fig. 1, in the transmitter 1 according to the third embodiment, the RF signal generation circuit 16 generates a first signal belonging to the first frequency band and a second signal belonging to the first frequency band or the second frequency band. .

In this embodiment, the RF signal generator circuit 16 generates an input signal RFin3 (second signal) belonging to the mid-band (second frequency band) or high band (first frequency band) and an input signal RFin4 (second signal) belonging to the high band. first signal).

Specifically, the RF signal generation circuit 16 modulates a transmission signal based on a control signal received from the control unit of the mobile communication device, and generates input signals RFin3 and RFin4 for radio transmission. The RF signal generation circuit 16 supplies the generated input signals RFin3 and RFin4 to transmission lines 61 and 62, respectively.

In addition, the RF signal generator circuit 16 outputs band information representing the frequency of the generated input signal RFin3 to the power amplifier circuit 13 . In this embodiment, the RF signal generating circuit 16 outputs, for example, the band signal Sb2 to the power amplifier circuit 13 as band information.

A power amplifier circuit according to the third embodiment will be described. Fig. 22 is a diagram showing the configuration of a power amplifier circuit according to a third embodiment of the present invention. As shown in FIG. 22, the power amplifier circuit 13 according to the third embodiment replaces the second variable adjustment circuit 123, the high-power broadband amplifier circuit 202, and the first variable adjustment circuit 203, and The power amplifier circuit 12 according to the second embodiment in that it includes a variable adjustment circuit 133, a high-power HB (high-band) amplifier circuit 222, and a fixed adjustment circuit 233 (see Fig. 21) different from The first variable adjustment circuit 133 has, for example, the same circuit configuration as the second variable adjustment circuit 123 (see Fig. 21).

An input signal RFin4 is supplied to the RF signal input terminal 32 through a transmission line 62 . The high-power HB amplifier circuit 222 is formed on the semiconductor chip 24 .

The low-power broadband amplifier circuit 122 amplifies the input signal RFin3 supplied through the RF signal input terminal 31 and generates amplified signals RF5p and RF5m (second amplified signal) having a second power. . In this embodiment, the low-power wideband amplifier circuit 122 is a circuit that amplifies the input signal RFin3 to a transmittable level with the transmission power of PC 3, and targets signals belonging to the mid-band or high-band to be amplified. The low power wideband amplifier circuit 122 outputs the generated amplified signals RF5p and RF5m to the first variable control circuit 133 .

The high-power HB amplifier circuit 222 amplifies the input signal RFin4 supplied through the RF signal input terminal 32, and amplifies the amplified signals RF6p and RF6m having a first power greater than the second power (first amplification). signal) is generated. In this embodiment, the high-power HB amplifier circuit 222 is a circuit that amplifies the input signal RFin4 to a transmittable level with the transmission power of PC 2, and targets a signal belonging to a high band as an amplification target. The high-power HB amplifier circuit 222 outputs the generated amplified signals RF6p and RF6m to the fixed adjustment circuit 233.

The high-power HB amplifier circuit 222 has the same circuit configuration as the low-power MB amplifier circuit 102 and the high-power broadband amplifier circuit 202, for example, and includes a driver stage single amplifier circuit 41 and A matching circuit 42 and a power stage differential amplifier circuit 43 are included (see FIG. 5). The fixed adjustment circuit 233 has, for example, the same circuit configuration as the fixed adjustment circuit 103, and includes a matching circuit 302 and a termination circuit 402 (see Fig. 8).

Further, the high-power HB amplifier circuit 222 may have a structure including a driver stage single amplifier circuit 41, an interstage matching circuit 44, and a power stage single amplifier circuit 45 (see Fig. 12). In this case, the fixed adjustment circuit 233 includes a matching circuit 307 and a termination circuit 407 (see FIG. 15).

In addition, although the configuration in which the low-power wideband amplifier circuit 122 and the high-power HB amplifier circuit 222 are formed on the semiconductor chips 23 and 24, respectively, has been described, the low-power wideband amplifier circuit 122 and the high-power HB amplifier circuit 222 may be formed on one semiconductor chip.

[Fourth Embodiment]

A transmission/reception unit according to the fourth embodiment will be described. The transmitting/receiving unit according to the fourth embodiment differs from the transmitting device according to the first embodiment in that the path of the RF signal is configured to be switchable.

23 is a diagram showing the configuration of a transmission/reception unit according to a fourth embodiment of the present invention. As shown in FIG. 23, the transmission/reception unit 6 according to the fourth embodiment includes a power amplifier circuit 14, switches 503, 504, 505, 506, and 507, and an FDD filter circuit group 521 ( 3rd circuit and 6th circuit), TDD filter circuit group 522 (4th circuit and 5th circuit), filter circuits 523, 524 and 525, and low noise amplifiers 531 and 532 , coupler circuit 541 is provided.

The power amplifier circuit 14 includes an amplifier circuit group 71A, an input distribution switch 501 (third switch section and fourth switch section), and an output distribution switch 502 (first switch section). The amplifying circuit group 71A has a circuit configuration similar to that of the power amplifying circuit 11A (see Fig. 4). A circuit after the power amplifier circuit 14 corresponds to, for example, a front end.

RF signal input terminals 551 and 552 are supplied with input signals RFin1 and RFin2 from the RF signal generating circuit 16, respectively.

The power supply voltage of the amplifiers 43a and 43b in the low-power MB amplifier circuit 102 (first amplifier circuit) (see Fig. 5) of the amplifier circuit group 71A is supplied to the power supply terminal 558, for example. are supplied The power supply voltage of the amplifier 41b in the low-power MB amplifier circuit 102 (see FIG. 5) of the amplifier circuit group 71A is supplied to the power supply terminal 559, for example.

The power supply voltage of the amplifiers 43a and 43b in the high-power broadband amplifier circuit 202 (second amplifier circuit) (see Fig. 5) of the amplifier circuit group 71A is supplied to the power supply terminal 560, for example. are supplied To the power supply terminal 561, for example, the power supply voltage of the amplifier 41b in the high-power broadband amplifier circuit 202 (see Fig. 5) of the amplifier circuit group 71A is supplied. A battery voltage is supplied to the battery connection terminal 562 .

The input distribution switch 501 has a first terminal to which the input signal RFin2 is supplied, a second terminal connected to the high-power broadband amplifier circuit 202, a third terminal connected to the low-power MB amplifier circuit 102, and an input terminal. It has a fourth stage to which the signal RFin1 is supplied.

In this embodiment, the fourth end and the first end of the input distribution switch 501 are connected to the RF signal input terminals 551 and 552, respectively. The second terminal of the input distribution switch 501 is connected to the RF signal input terminal 32 (see Fig. 4) of the amplifier circuit group 71A via the transmission line 62. The third terminal of the input distribution switch 501 is connected to the RF signal input terminal 31 (see Fig. 4) of the amplifier circuit group 71A via the transmission line 61.

The input distribution switch 501 is configured such that the first end can be connected to any one of the second and third terminals, and the fourth terminal can be connected to any one of the second and third terminals.

In this embodiment, the input distribution switch 501 electrically connects the fourth stage and the third stage based on a control signal output from the control unit of the mobile communication device, and electrically connects the first stage and the second stage. connect Further, the input distribution switch 501 electrically connects the fourth stage and the second stage and electrically connects the first stage and the third stage based on, for example, a control signal.

The FDD filter circuit group 521 includes the FDD filter circuits 521a, 521b, and 521c, and the low power MB amplifier circuit 102 and the fixed adjustment circuit 103 in the amplifier circuit group 71A ( See Figure 4) is formed at the rear end. Hereinafter, each of the FDD filter circuits 521a, 521b, and 521c may simply be referred to as an FDD filter circuit.

The FDD filter circuit is, for example, a band pass filter formed corresponding to a band number of a band used for FDD communications and having attenuation characteristics corresponding to the band number.

The FDD filter circuit includes a first stage to which an RF signal is supplied during transmission, a second stage to output an RF signal during reception, and a third stage to output an RF signal during transmission and to supply an RF signal during reception. have

Specifically, for example, when the filter circuit 521a for FDD is formed corresponding to the band number 25, the filter circuit 521a for FDD passes the RF signal included in the frequency band from 1850 MHz to 1915 MHz, RF signals of frequency components out of the frequency band are attenuated (see FIG. 2).

The TDD filter circuit group 522 includes the TDD filter circuits 522a, 522b, and 522c, and the high power wideband amplifier circuit 202 and the first variable adjustment circuit 203 in the amplifier circuit group 71A. ) (see FIG. 4). Hereinafter, each of the TDD filter circuits 522a, 522b, and 522c may simply be referred to as a TDD filter circuit.

The TDD filter circuit is, for example, a band pass filter formed corresponding to the band number of a band used in TDD communications and having attenuation characteristics corresponding to the band number.

A filter circuit for TDD has a first stage to which an RF signal is supplied during transmission and outputs an RF signal during reception, and a second stage to output an RF signal during transmission and to supply an RF signal during reception. .

Specifically, for example, when the filter circuit 522a for TDD is formed corresponding to the band number 40, the filter circuit 522a for TDD passes RF signals included in the frequency band from 2300 MHz to 2400 MHz, RF signals of frequency components out of the frequency band are attenuated (see FIG. 2).

The output distribution switch 502 is provided between the amplifier circuit group 71A and the filter circuit group 521 for FDD and the filter circuit group 522 for TDD. Then, the output distribution switch 502 connects the low-power MB amplifier circuit 102 and the fixed adjustment circuit 103 (see Fig. 4) in the amplifier circuit group 71A to the FDD filter circuits 521a, 521b, and 521c. and filter circuits for TDD (522a, 522b, and 522c).

In this embodiment, the output distribution switch 502 has a first end connected to the fixed control circuit 103 via a transmission line 63 and a first end connected to the first variable control circuit 203 via a transmission line 64. The second terminal, the third terminal, the fourth terminal, the fifth terminal, the sixth terminal connected to the first terminal of the TDD filter circuit 522c, and the seventh terminal connected to the first terminal of the TDD filter circuit 522b; , the eighth terminal connected to the first terminal of the TDD filter circuit 522a, the ninth terminal connected to the first terminal of the FDD filter circuit 521c, and the first terminal of the FDD filter circuit 521b. and an 11th terminal connected to the first terminal of the FDD filter circuit 521a.

In the present embodiment, the output distribution switch 502 electrically connects the first terminal and any one of the terminals from the sixth to eleventh terminals based on a control signal output from the control unit of the mobile communication device, for example. .

Further, the output distribution switch 502 electrically connects the eighth terminal and any one of the second terminal and the third terminal based on the control signal. Further, the output distribution switch 502 electrically connects the seventh terminal and any one of the second terminal and the fourth terminal based on the control signal. Further, the output distribution switch 502 electrically connects the 6th terminal and any one of the 2nd terminal and the 5th terminal based on the control signal.

The switch 503 is configured so that any one of the FDD filter circuits 521a, 521b, and 521c and the TDD filter circuits 522a, 522b, and 522c can be connected to the filter circuit 523. The filter circuit 523 is a low pass filter capable of changing the cut-off frequency, and has a first stage and a second stage.

In this embodiment, the switch 503 comprises a first end connected to the third end of the FDD filter circuit 521a, a second end connected to the third end of the FDD filter circuit 521b, and an FDD filter circuit ( 521c), the fourth terminal connected to the second terminal of the TDD filter circuit 522a, the fifth terminal connected to the second terminal of the TDD filter circuit 522b, and the TDD filter circuit 522b. It has a sixth terminal connected to the second terminal of the filter circuit 522c and a seventh terminal connected to the first terminal of the filter circuit 523.

The switch 503 electrically connects any one of the terminals from the first to the sixth terminals to the seventh terminal based on a control signal output from the control unit of the mobile communication device, for example.

The switch 504 is configured to enable connection of the filter circuit 523 to either the RF signal output terminal 553 connected to the first antenna or the RF signal output terminal 554 connected to the second antenna.

In this embodiment, the switch 504 includes a first terminal connected to the second terminal of the filter circuit 523, a second terminal connected to the negative output terminal 563 for DRX (Discontinuous Reception) control, and an RF signal output terminal ( 554) and a fourth terminal connected to the RF signal output terminal 553.

The switch 504 electrically connects a first end and any one of a third end and a fourth end based on a control signal output from a control unit of a mobile communication device, for example. Further, the switch 504 electrically connects the second end and any one of the third end and the fourth end based on, for example, a control signal.

The coupler circuit 541 includes a switch and the like, is electromagnetically coupled to a signal line connecting the switch 503 and the filter circuit 523, and transmits a portion of the RF signal transmitted by the signal line to the coupler output terminal ( 564) is supplied.

The switch 505 is configured such that any one of the TDD filter circuits 522a, 522b, and 522c can be connected to the low noise amplifier 531.

In this embodiment, the switch 505 is connected to the first terminal connected to the low noise amplifier 531, the second terminal connected to the fifth terminal of the output distribution switch 502, and the fourth terminal of the output distribution switch 502. It has a third end connected and a fourth end connected to the third end of the output distribution switch 502.

The switch 505 electrically connects the first end, the second end, the third end, and any one of the fourth end based on a control signal output from the control unit of the mobile communication device, for example.

The low noise amplifier 531 is an amplifier capable of changing a gain based on a control signal output from a control unit of the mobile communication device, and amplifies an RF signal received in TDD communication. In this embodiment, the low noise amplifier 531 is connected to the first terminal of the switch 505 and has an input terminal to which an RF signal is supplied and an output terminal to output an amplified RF signal.

The switch 506 is configured such that any one of the FDD filter circuits 521a, 521b, and 521c can be connected to the low noise amplifier 532.

In this embodiment, the switch 506 includes a first terminal connected to the low noise amplifier 532, a second terminal connected to the second terminal of the FDD filter circuit 521c, and a second terminal of the FDD filter circuit 521b. and a fourth terminal connected to the second terminal of the FDD filter circuit 521a.

The switch 506 electrically connects the first end, any one of the second end, third end, and fourth end based on a control signal output from the control unit of the mobile communication device, for example.

The low noise amplifier 532 is an amplifier capable of changing a gain based on a control signal output from a control unit of the mobile communication device, and amplifies an RF signal received in FDD communication. In this embodiment, the low noise amplifier 532 is connected to the first terminal of the switch 506 and has an input terminal to which an RF signal is supplied and an output terminal to output an amplified RF signal.

The switch 507 is configured such that any one of the low noise amplifiers 531 and 532 can be connected to any one of the RF signal output terminals 555, 556 and 557.

In this embodiment, the switch 507 has a first terminal connected to the output terminal of the low noise amplifier 532 through the filter circuit 525, and connected to the output terminal of the low noise amplifier 531 through the filter circuit 524. It has a second terminal connected to the RF signal output terminal 555, a fourth terminal connected to the RF signal output terminal 556, and a fifth terminal connected to the RF signal output terminal 557.

The switch 507 electrically connects any one of the first stage, the third stage, the fourth stage, and the fifth stage based on a control signal output from the control unit of the mobile communication device, for example, and The second end and any one of the third end, the fourth end, and the fifth end are electrically connected.

(Switch Connection Type for FDD communication)

The input distribution switch 501, the output distribution switch 502, and the switches 503, 505, and 506 operate in conjunction.

In this embodiment, communication of the FDD method and communication of the TDD method are not performed simultaneously. For this reason, when communication of the FDD system is performed, only the input signal RFin1 is output from the RF signal generating circuit 16 and supplied to the RF signal input terminal 551.

In the communication of the FDD system, since the transmission power of PC 3 is the upper limit of the transmission power of the RF signal, for example, the input distribution switch 501 electrically connects its fourth terminal and its third terminal. The output distribution switch 502 electrically connects its first terminal to terminals corresponding to band numbers of bands used for FDD communication among the ninth, tenth, and eleventh terminals.

Specifically, the output distribution switch 502 electrically connects its first end and its eleventh end when, for example, the band of band number 25 is used for FDD communication. The switch 503 electrically connects its first end and its seventh end. The switch 504 electrically connects a first end and a fourth end thereof, for example. The switch 506 electrically connects its first and fourth terminals.

As a result, the input signal RFin1 belonging to the band of band number 25 passes through the RF signal input terminal 551 and the input distribution switch 501 to the low-power MB amplifier circuit 102 in the amplifier circuit group 71A ( See Figure 4) is supplied to and amplified. The RF signal amplified by the low-power MB amplifying circuit 102 includes the fixed adjustment circuit 103 (see FIG. 4), the output distribution switch 502, the FDD filter circuit 521a, the switch 503, and the filter circuit 523. ), and supplied to the RF signal output terminal 553 through the switch 504.

Further, for example, the RF signal belonging to the band of band number 25 received by the first antenna is transmitted through the switch 504, the filter circuit 523, the switch 503, the FDD filter circuit 521a, and the switch 506. , is supplied to the RF signal output terminal 555, 556 or 557 through the low noise amplifier 532, the filter circuit 525, and the switch 507.

(Switch connection type 1 for TDD communication)

When communication of the TDD method is performed, only the input signal RFin2 is output from the RF signal generating circuit 16 and supplied to the RF signal input terminal 552. In the communication of the TDD method, since the transmission power of PC 2 is, for example, the upper limit of the transmission power of the RF signal, the input distribution switch 501 electrically connects its first terminal and its second terminal. Since the RF signal transmission period and the RF signal reception period are separated in the TDD type communication, the output distribution switch 502 divides its second, sixth, seventh and fourth stages in the RF signal transmission period. Electrically connect the terminal corresponding to the band number of the band used for TDD type communication among the 8 terminals.

Specifically, the output distribution switch 502 electrically connects its second end and its eighth end when, for example, the band of band number 40 is used for TDD communication. The switch 503 electrically connects its fourth and seventh terminals. The switch 504 electrically connects a first end and a fourth end thereof, for example.

As a result, the input signal RFin2 belonging to the band of band number 40 passes through the RF signal input terminal 552 and the input distribution switch 501 to the high-power wideband amplifier circuit 202 in the amplifier circuit group 71A ( See Figure 4) is supplied to and amplified. The RF signal amplified by the high-power broadband amplification circuit 202 includes a first variable adjustment circuit 203 (see FIG. 4), an output distribution switch 502, a TDD filter circuit 522a, a switch 503, and a filter circuit. 523, and supplied to the RF signal output terminal 553 through the switch 504.

Further, the output distribution switch 502 electrically insulates the second terminal and the eighth terminal of the magnet during the reception period of the RF signal, and electrically connects the third terminal and the eighth terminal of the magnet. The switch 505 electrically connects its first and fourth terminals.

Thereby, for example, the RF signal belonging to the band of band number 40 received by the first antenna is transmitted through the switch 504, the filter circuit 523, the switch 503, the TDD filter circuit 522a, and the output distribution. The RF signal is supplied to the RF signal output terminal 555, 556 or 557 through the switch 502, switch 505, low noise amplifier 531, filter circuit 524, and switch 507.

(Switch connection type 2 in TDD communication)

In the communication of the TDD method, since the transmit power of PC 2 is the upper limit of the transmit power of the RF signal, amplification is performed by the high-power broadband amplifier circuit 202 (see Fig. 4) in the amplifier circuit group 71A. There is a case where an RF signal can be transmitted with the transmit power of PC 3 because the distance between the base station and the base station is close. In addition, in the communication of the TDD system, there is a case where the transmit power of PC 3 may be set as the upper limit of the transmit power of the RF signal.

In this case, the input distribution switch 501 electrically connects its first terminal and its third terminal. The output distribution switch 502 electrically selects terminals corresponding to band numbers of bands used for communication of the TDD method among its first terminal, sixth terminal, seventh terminal, and eighth terminal during the transmission period of the RF signal. connect to

Specifically, the output distribution switch 502 electrically connects its first end and its eighth end when, for example, the band of band number 40 is used for TDD communication. The switch 503 electrically connects its fourth and seventh terminals. The switch 504 electrically connects a first end and a fourth end thereof, for example.

As a result, the input signal RFin2 belonging to the band of band number 40 passes through the RF signal input terminal 552 and the input distribution switch 501 to the low-power MB amplifier circuit 102 in the amplifier circuit group 71A ( See Figure 4) is supplied to and amplified. The RF signal amplified by the low-power MB amplifying circuit 102 includes a fixed adjustment circuit 103 (see FIG. 4), an output distribution switch 502, a TDD filter circuit 522a, a switch 503, and a filter circuit 523. ), and supplied to the RF signal output terminal 553 through the switch 504.

In addition, the output distribution switch 502 electrically insulates the first terminal and the eighth terminal of the magnet during the reception period of the RF signal, and electrically connects the third terminal and the eighth terminal of the magnet. The switch 505 electrically connects its first and fourth terminals.

Thereby, for example, the RF signal belonging to the band of band number 40 received by the first antenna is transmitted through the switch 504, the filter circuit 523, the switch 503, the TDD filter circuit 522a, and the output distribution. The RF signal is supplied to the RF signal output terminal 555, 556 or 557 through the switch 502, switch 505, low noise amplifier 531, filter circuit 524, and switch 507.

The low-power MB amplifier circuit 102 (see Fig. 4) is configured to be highly efficient when amplifying an RF signal to a level that can be transmitted by, for example, the transmission power of PC3. In addition, the high-power wideband amplifier circuit 202 (see FIG. 4) is configured to be highly efficient when amplifying an RF signal to a transmittable level by, for example, the transmit power of PC2. For this reason, the power efficiency of the high-power wideband amplifier circuit 202 decreases when amplifying the RF signal to a level that can be transmitted by the transmission power of PC3.

In contrast, in the transmission/reception unit 6, the supply source of the input signal RFin2 is switched to either the low-power MB amplifier circuit 102 or the high-power broadband amplifier circuit 202 by means of the input distribution switch 501. Specifically, for example, when the input signal RFin2 is amplified to a transmittable level by the transmission power of PC 2, the input signal RFin2 is supplied to the high-power wideband amplifier circuit 202, and the input signal RFin2 The input signal RFin2 is supplied to the low-power MB amplifier circuit 102 when amplifying to a transmittable level by the transmission power of PC 3. As a result, the input signal RFin2 can be supplied to the low-power MB amplifier circuit 102 or high-power broadband amplifier circuit 202 that can efficiently operate according to the amplification level in amplifying the input signal RFin2, and thus the power amplifier circuit. In (14), it is possible to suppress a decrease in power efficiency.

In addition, in the transmission/reception unit 6 according to the present embodiment, the configuration in which the amplifying circuit group 71A has the same circuit configuration as that of the power amplifying circuit 11A has been described, but the amplifying circuit group 71A is the power amplifying circuit 11B. , 11C, 11D, 12 or 13) may have the same circuit configuration.

Further, in the transmission/reception unit 6 according to the present embodiment, the output distribution switch 502 has a configuration in which the high-power broadband amplifier circuit 202 can be connected to any one of the TDD filter circuits 522a, 522b, and 522c. described, but is not limited thereto. The output distribution switch 502 may have a configuration in which the high-power broadband amplifier circuit 202 can be connected to any one of the FDD filter circuits 521a, 521b, and 521c and the TDD filter circuits 522a, 522b, and 522c. good night. In this way, the RF signal amplified by the high-power wideband amplifier circuit 202 can be supplied to the FDD filter circuit 521a, 521b or 521c.

In addition, in the transmitting/receiving unit 6 according to the present embodiment, the input distribution switch 501 is configured such that the first end is connectable to either the second end or the third end, and the fourth end is connected to the second end or the third end. Although the configuration configured to be connectable to any one of the third stages has been described, it is not limited to this. The input distribution switch 501 may be configured such that the first end is only connectable to either the second end or the third end. In addition, the input distribution switch 501 may be configured only so that the fourth end is connectable to either the second end or the third end.

Here, when the amplifying circuit group 71A has the same circuit configuration as the power amplifying circuit 13 (see Fig. 22), the output distribution switch 502 corresponds to the "second switch section". The low power wideband amplifier circuit 122 and the high power HB amplifier circuit 222 correspond to the "second amplifier circuit" and the "first amplifier circuit", respectively. The filter circuit group 521 for FDD and the filter circuit group 522 for TDD correspond to the "fifth circuit" and the "sixth circuit", respectively.

In this case, the output distribution switch 502 connects the high-power HB amplifier circuit 222 to any one of the FDD filter circuits 521a, 521b, and 521c and the TDD filter circuits 522a, 522b, and 522c. Any possible configuration may be used.

[Fifth Embodiment]

A basic example of the power amplifier circuit according to the fifth embodiment will be described. In the power amplification circuit according to the fifth embodiment, RF signals belonging to the frequency band (UB: Unlicensed Band) (hereinafter sometimes referred to as the unlicensed band) from 5.925 GHz to 7.125 GHz are not RF signals belonging to the mid-band or high band. It is different from the power amplifier circuit according to the first embodiment in that it amplifies the signal.

24 is a diagram showing the configuration of a basic example of a power amplifier circuit according to a fifth embodiment of the present invention. As shown in Fig. 24, a basic example of the power amplifier circuit 15 according to the fifth embodiment (hereinafter sometimes referred to as a power amplifier circuit 15A) includes an amplifier circuit group 634 and a TDD filter circuit group ( 621) is provided. The amplifier circuit group 634 includes a high power UB amplifier circuit 635 (third amplifier circuit) and a low power UB amplifier circuit 636 (fourth amplifier circuit). The TDD filter circuit group 621 includes TDD filter circuits 621a (first filter) and 621b (second filter). The amplifier circuit group 634 and the filter circuit group for TDD 621 are formed on the semiconductor chip 641, for example.

25 is a diagram showing an example of the band configuration of each RF signal amplified by the power amplifier circuit according to the fifth embodiment of the present invention. In Fig. 25, the horizontal axis represents the frequency with "GHz" as the unit.

As shown in Figs. 24 and 25, each RF signal amplified by the power amplifier circuit 15A belongs to an unlicensed band that does not require a radio station license. An RF signal belonging to an unlicensed band is transmitted and received in a TDD method conforming to the communication standard of the fifth generation mobile communication system (5G), for example.

The unlicensed bands are HP (High Power) band 1 (third frequency band) from 5.925GHz to 6.425GHz, LP (Low Power) band 1 (fourth frequency band) from 6.425GHz to 6.525GHz, and 6.525GHz to 6.875 It includes HP band 2 (third frequency band) up to GHz and LP band 2 (fourth frequency band) from 6.875 GHz to 7.125 GHz. Hereinafter, each of HP band 1 and HP band 2 is sometimes referred to as a high power band. Each of LP band 1 and LP band 2 is sometimes referred to as a low power band.

An RF signal belonging to the high power band is transmitted with an antenna output of 23 dBm at the maximum (hereinafter sometimes referred to as a high power output). An RF signal belonging to the low power band is transmitted with an antenna output of 17 dBm at maximum (hereinafter sometimes referred to as low power output). In the present embodiment, the low power band is a band for wireless communication dedicated to indoors, such as large factories and offices, for example.

An RF signal belonging to the high power band (hereinafter sometimes referred to as an input signal RFinH) (first transmission signal) is supplied to the RF signal input terminal 651 in the power amplifier circuit 15A. The RF signal input terminal 652 is supplied with an RF signal belonging to a low power band (hereinafter sometimes referred to as an input signal RFinL) (second transmission signal). The RF signal output terminals 653 and 654 are connected to, for example, a third antenna not shown.

The high power UB amplifier circuit 635 in the amplifier circuit group 634 has the same circuit configuration as the low power MB amplifier circuit 102 and the fixed adjustment circuit 103 (see Fig. 4). The high-power UB amplifier circuit 635 may have a circuit configuration similar to that of the low-power MB amplifier circuit 112 and the fixed adjustment circuit 113 (see Fig. 11).

The high-power UB amplifier circuit 635 receives an input terminal to which an input signal RFinH is supplied through an RF signal input terminal 651 and an amplified signal RF7H (third amplified signal) obtained by amplifying the input signal RFinH. It has an output terminal that outputs. The high-power UB amplifier circuit 635 has high power efficiency when amplifying an RF signal belonging to an unlicensed band to a transmittable level (hereinafter sometimes referred to as a high power level) (third power) by means of a high power output. It is composed of

The low power UB amplifier circuit 636 has the same circuit configuration as the low power MB amplifier circuit 102 and the fixed adjustment circuit 103 (see Fig. 4). Further, the low power UB amplifier circuit 636 may have a circuit configuration similar to that of the low power MB amplifier circuit 112 and the fixed adjustment circuit 113 (see Fig. 11).

The low-power UB amplifier circuit 636 outputs an input terminal to which the input signal RFinL is supplied through the RF signal input terminal 652 and an amplified signal RF7L (fourth amplified signal) obtained by amplifying the input signal RFinL. It has an output terminal that The low power UB amplifier circuit 636 has high power efficiency when amplifying an RF signal belonging to an unlicensed band to a transmittable level (hereinafter sometimes referred to as a low power level) (fourth power) by means of a low power output. It is composed of

The TDD filter circuit 621a is formed after the high-power UB amplifier circuit 635, and has power resistance at a high power level. Specifically, the TDD filter circuit 621a has a first end connected to the output terminal of the high-power UB amplifier circuit 635 and a second end connected to the RF signal output terminal 653.

The filter circuit 621a for TDD passes RF signals included in, for example, HP band 1, and attenuates RF signals of frequency components out of HP band 1. Further, the TDD filter circuit 621a may pass RF signals included in HP band 2 and attenuate RF signals of frequency components outside of HP band 2. Further, the TDD filter circuit 621a may pass RF signals included in the high power band and attenuate RF signals of frequency components outside the high power band.

The TDD filter circuit 621b is formed after the low-power UB amplifier circuit 636, and has power resistance at a low power level. Specifically, the TDD filter circuit 621b has a first end connected to the output terminal of the low-power UB amplifier circuit 636 and a second end connected to the RF signal output terminal 654.

The filter circuit 621b for TDD passes RF signals included in, for example, LP band 1, and attenuates RF signals of frequency components out of LP band 1. Further, the TDD filter circuit 621b may pass RF signals included in LP band 2 and attenuate RF signals of frequency components outside of LP band 2. Further, the TDD filter circuit 621b may pass RF signals included in the low power band and attenuate RF signals of frequency components outside the low power band.

(Modification 1 of the power amplifier circuit 15)

Modification 1 of the power amplifier circuit according to the fifth embodiment will be described. Fig. 26 is a diagram showing the configuration of modified example 1 of the power amplifier circuit according to the fifth embodiment of the present invention. As shown in Fig. 26, modified example 1 of the power amplification circuit 15 according to the fifth embodiment (hereinafter sometimes referred to as a power amplification circuit 15B) includes a low noise amplifier 631 for a received signal and a TDD It is different from the basic example of the power amplifier circuit 15 shown in FIG. 24, that is, the power amplifier circuit 15A, in that a switch for switching the connection destination of each of the filter circuits 621a and 621b is provided.

Compared to the power amplifier circuit 15A shown in FIG. 24, the power amplifier circuit 15B includes an output distribution switch 604 (fifth switch section), a switch 605 (sixth switch section), and a low noise amplifier 631 ) (a fifth amplifier circuit).

The RF signal output terminal 655 in the power amplifier circuit 15B is connected to a circuit that demodulates a received signal, for example. The RF signal output terminal 653 is connected to a third antenna (seventh circuit), for example.

The low noise amplifier 631 amplifies the input signal RFinR (received signal) belonging to the high power band or low power band received by the third antenna. In this embodiment, the low noise amplifier 631 is connected to an input terminal to which the input signal RFinR is supplied and an RF signal output terminal 655, and generates an amplified signal RF7R (fifth amplification) obtained by amplifying the input signal RFinR. It has an output terminal that outputs a signal). The low noise amplifier 631 is configured to increase power efficiency when amplifying an RF signal belonging to an unlicensed band.

The output distribution switch 604 is provided between the amplifier circuit group 634 and the low noise amplifier 631 and the TDD filter circuit group 621. The output distribution switch 604 is configured such that the filter circuit 621a for TDD can be connected to either the high-power UB amplifier circuit 635 or the low noise amplifier 631, and the filter circuit 621b for TDD is connected. It is configured to be connectable to either of the power UB amplifier circuit 636 and the low noise amplifier 631.

In this embodiment, the output distribution switch 604 includes a first terminal connected to the output terminal of the high-power UB amplifier circuit 635, a second terminal connected to the input terminal of the low-noise amplifier 631, and a low-power UB amplifier circuit 636 has a third terminal connected to the output terminal, a fourth terminal connected to the first terminal of the TDD filter circuit 621b, and a fifth terminal connected to the first terminal of the TDD filter circuit 621a. .

The output distribution switch 604 electrically connects the fifth stage and either the first stage or the second stage based on a control signal output from the control unit of the mobile communication device, for example. Further, the output distribution switch 604 electrically connects the fourth end and any one of the second end and the third end based on the control signal.

The switch 605 is provided between the TDD filter circuit group 621 and the RF signal output terminal 653 connected to the third antenna. The switch 605 is configured so that connection of either one of the TDD filter circuits 621a and 621b to the RF signal output terminal 653 is possible.

In this embodiment, the switch 605 includes a first end connected to the second end of the TDD filter circuit 621a, a second end connected to the second end of the TDD filter circuit 621b, and an RF signal output terminal ( 653) and has a third end connected to it.

The switch 605 electrically connects the third end and either the first end or the second end based on a control signal output from the control unit of the mobile communication device, for example.

(Type of switch connection when transmitting and receiving RF signals belonging to the high power band)

The output distribution switch 604 and switch 605 operate interlockingly. In this embodiment, communication in the high power band and communication in the low power band are not performed simultaneously. For this reason, only the input signal RFinH is supplied to the RF signal input terminal 651 when communication in the high power band is performed.

In TDD communication, since the RF signal transmission period and the RF signal reception period are separated, the output distribution switch 604 has its first terminal and The fifth stage is electrically connected. Meanwhile, the output distribution switch 604 electrically insulates its first end and fifth end and electrically connects its second end and fifth end during the reception period of the RF signal belonging to HP band 1. The switch 605 electrically connects its first terminal and its third terminal in the transmission period and reception period of the RF signal belonging to HP band 1.

As a result, during the transmission period of the RF signal belonging to the HP band 1, the amplified signal RF7H output from the high-power UB amplifier circuit 635 is transmitted through the output distribution switch 604, the TDD filter circuit 621a, and the switch 605 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the reception period of the RF signal belonging to HP band 1, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 605, the TDD filter circuit 621a, and the output distribution switch 604. is supplied to the low noise amplifier 631 through

(Type of switch connection when transmitting and receiving RF signals belonging to LP band 1)

When communication in the low power band is performed, only the input signal RFinL is supplied to the RF signal input terminal 652. The output distribution switch 604 electrically connects its third and fourth terminals during the transmission period of the RF signal belonging to the low power band, for example, the LP band 1. Meanwhile, the output distribution switch 604 electrically insulates its third and fourth terminals during the receiving period of the RF signal belonging to LP band 1, and electrically connects its second and fourth terminals. The switch 605 electrically connects its second and third terminals in the transmission period and reception period of the RF signal belonging to LP band 1.

As a result, during the transmission period of the RF signal belonging to the LP band 1, the amplified signal RF7L output from the low-power UB amplifier circuit 636 is output by the output distribution switch 604, the TDD filter circuit 621b, and the switch 605 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the receiving period of the RF signal belonging to LP band 1, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 605, the TDD filter circuit 621b, and the output distribution switch 604. is supplied to the low noise amplifier 631 through

(Modified Example 2 of Power Amplifier Circuit 15)

Modification 2 of the power amplifier circuit according to the fifth embodiment will be described. Fig. 27 is a diagram showing the configuration of modification 2 of the power amplifier circuit according to the fifth embodiment of the present invention. As shown in FIG. 27, in the modified example 2 of the power amplifier circuit 15 according to the fifth embodiment (hereinafter sometimes referred to as a power amplifier circuit 15C), two more filters are formed. It is different from modified example 1 of the power amplifier circuit 15 shown, that is, the power amplifier circuit 15B.

Compared to the power amplifier circuit 15B shown in Fig. 26, the power amplifier circuit 15C includes an output distribution switch 602 (the first 5 switch section), a switch 603 (sixth switch section), and a filter circuit group 622 for TDD.

The TDD filter circuit group 622 includes TDD filter circuits 622a (first filter), 622b (third filter), 622c (second filter), and 622d (fourth filter). Filter circuits 622a and 622b for TDD are formed after the high power UB amplifier circuit 635, and have power resistance at a high power level. Filter circuits 622c and 622d for TDD are formed after the low-power UB amplifier circuit 636, and have power withstandability at a low power level. Hereinafter, each of the TDD filter circuits 622a, 622b, 622c, and 622d may simply be referred to as a TDD filter circuit.

A filter circuit for TDD has a first stage to which an RF signal is supplied during transmission and outputs an RF signal during reception, and a second stage to output an RF signal during transmission and to supply an RF signal during reception. .

The filter circuit 622a for TDD passes RF signals included in HP band 1 and attenuates RF signals of frequency components out of HP band 1. The filter circuit 622b for TDD passes RF signals included in HP band 2 and attenuates RF signals of frequency components out of HP band 2. The TDD filter circuit 622c passes an RF signal included in LP band 1 and attenuates an RF signal of a frequency component outside of LP band 1. The TDD filter circuit 622d passes an RF signal included in LP band 2 and attenuates an RF signal of a frequency component out of LP band 2.

The output distribution switch 602 is configured such that the TDD filter circuit 622a can be connected to either the high power UB amplifier circuit 635 or the low noise amplifier 631, and the TDD filter circuit 622b can be connected to the high power It is configured to be connectable to either one of the UB amplifier circuit 635 and the low noise amplifier 631, and the TDD filter circuit 622c is connected to either the low power UB amplifier circuit 636 and the low noise amplifier 631 It is configured to be connectable, and also configured to be able to connect the TDD filter circuit 622d to either the low power UB amplifier circuit 636 or the low noise amplifier 631.

In other words, the output distribution switch 602 is configured to connect the high-power UB amplifier circuit 635 to either of the TDD filter circuits 622a and 622b, and the low-power UB amplifier circuit 636 to the TDD filter It is configured to be connectable to either of the circuits 622c and 622d, and also to allow the low noise amplifier 631 to be connected to any one of the TDD filter circuits 622a, 622b, 622c, and 622d.

In this embodiment, the output distribution switch 602 includes a first terminal connected to the output terminal of the high-power UB amplifier circuit 635, a second terminal connected to the input terminal of the low-noise amplifier 631, and a low-power UB amplifier circuit The third terminal connected to the output terminal of 636, the fourth terminal connected to the first terminal of the TDD filter circuit 622d, the fifth terminal connected to the first terminal of the TDD filter circuit 622c, and the TDD It has a sixth terminal connected to the first terminal of the filter circuit 622b for TDD and a seventh terminal connected to the first terminal of the filter circuit 622a for TDD.

The output distribution switch 602 electrically connects a first end and any one of a sixth end and a seventh end based on a control signal output from a control unit of a mobile communication device, for example. Also, the output distribution switch 602 electrically connects the second terminal and any one of the terminals from the fourth to seventh terminals based on the control signal. Further, the output distribution switch 602 electrically connects the third terminal and any one of the fourth terminal and the fifth terminal based on the control signal.

The switch 603 is configured to enable connection of any one of the TDD filter circuits 622a, 622b, 622c, and 622d to the RF signal output terminal 653.

In this embodiment, the switch 603 includes a first end connected to the second end of the TDD filter circuit 622a, a second end connected to the second end of the TDD filter circuit 622b, and a TDD filter circuit ( 622c) has a third terminal connected to the second terminal, a fourth terminal connected to the second terminal of the TDD filter circuit 622d, and a fifth terminal connected to the RF signal output terminal 653.

The switch 603 electrically connects any one of the terminals from the first to the fourth terminals to the fifth terminal based on a control signal output from the control unit of the mobile communication device, for example.

(Type of switch connection when transmitting and receiving RF signals belonging to HP band 1)

The output distribution switch 602 and switch 603 operate interlockingly. In this embodiment, communication in the high power band and communication in the low power band are not performed simultaneously. For this reason, only the input signal RFinH is supplied to the RF signal input terminal 651 when communication in the high power band is performed.

In the TDD communication, since the RF signal transmission period and the RF signal reception period are separated, the output distribution switch 602 electrically connects its 1st terminal to its 7th terminal during the RF signal transmission period belonging to HP band 1. do. Meanwhile, the output distribution switch 602 electrically insulates its first terminal and its seventh terminal during the reception period of the RF signal belonging to HP band 1, and electrically connects its second terminal and its seventh terminal. The switch 603 electrically connects its first terminal and its fifth terminal in the transmission period and reception period of the RF signal belonging to HP band 1.

As a result, during the transmission period of the RF signal belonging to the HP band 1, the amplified signal RF7H output from the high-power UB amplifier circuit 635 is transmitted through the output distribution switch 602, the TDD filter circuit 622a, and the switch 603 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the reception period of the RF signal belonging to HP band 1, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622a, and the output distribution switch 602. is supplied to the low noise amplifier 631 through

(Type of switch connection when transmitting and receiving RF signals belonging to HP band 2)

The output distribution switch 602 electrically connects its first end and sixth end during the transmission period of the RF signal belonging to the HP band 2. Meanwhile, the output distribution switch 602 electrically insulates its first terminal and its sixth terminal during the receiving period of the RF signal belonging to HP band 2, and electrically connects its second terminal and sixth terminal. The switch 603 electrically connects its second terminal and fifth terminal in the transmission period and reception period of the RF signal belonging to HP band 2.

As a result, during the transmission period of the RF signal belonging to the HP band 2, the amplified signal RF7H output from the high-power UB amplifier circuit 635 is transmitted through the output distribution switch 602, the TDD filter circuit 622b, and the switch 603 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the receiving period of the RF signal belonging to the HP band 2, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622b, and the output distribution switch 602. is supplied to the low noise amplifier 631 through

(Type of switch connection when transmitting and receiving RF signals belonging to LP band 1)

When communication in the low power band is performed, only the input signal RFinL is supplied to the RF signal input terminal 652. The output distribution switch 602 electrically connects its third and fifth terminals during the transmission period of the RF signal belonging to LP band 1. Meanwhile, the output distribution switch 602 electrically insulates its third and fifth terminals during the receiving period of the RF signal belonging to LP band 1, and electrically connects its second and fifth terminals. The switch 603 electrically connects its third and fifth terminals in the transmission period and reception period of the RF signal belonging to LP band 1.

As a result, during the transmission period of the RF signal belonging to the LP band 1, the amplified signal RF7L output from the low-power UB amplifier circuit 636 is transmitted through the output distribution switch 602, the TDD filter circuit 622c, and the switch 603 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the receiving period of the RF signal belonging to LP band 1, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622c, and the output distribution switch 602. is supplied to the low noise amplifier 631 through

(Connection form of switch when transmitting/receiving RF signal belonging to LP band 2)

The output distribution switch 602 electrically connects its third and fourth terminals during the transmission period of the RF signal belonging to the LP band 2. Meanwhile, the output distribution switch 602 electrically insulates its third and fourth terminals during the receiving period of the RF signal belonging to LP band 2 and electrically connects its second and fourth terminals. The switch 603 electrically connects its fourth and fifth terminals in the transmission period and reception period of the RF signal belonging to LP band 2.

As a result, during the transmission period of the RF signal belonging to the LP band 2, the amplified signal RF7L output from the low-power UB amplifier circuit 636 is transmitted through the output distribution switch 602, the TDD filter circuit 622d, and the switch 603 ) is supplied to the RF signal output terminal 653.

Meanwhile, during the reception period of the RF signal belonging to the LP band 2, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622d, and the output distribution switch 602. is supplied to the low noise amplifier 631 through

(Modified Example 3 of Power Amplifier Circuit 15)

Modification 3 of the power amplifier circuit according to the fifth embodiment will be described. Fig. 28 is a diagram showing the configuration of modified example 3 of the power amplifier circuit according to the fifth embodiment of the present invention. As shown in Fig. 28, in modified example 3 of the power amplifier circuit 15 according to the fifth embodiment (hereinafter sometimes referred to as a power amplifier circuit 15D), the input signal supplied to the RF signal input terminal 651 It is different from Modification 2 of the power amplifying circuit 15 shown in Fig. 27, that is, the power amplifying circuit 15C, in that a switch for switching the output destination of is provided.

Compared to the power amplifier circuit 15C shown in FIG. 27, the power amplifier circuit 15D includes an output distribution switch 602a (fifth switch unit) instead of the output distribution switch 602, and an input distribution switch 601 ( A seventh switch unit) is further provided.

The input distribution switch 601 is installed in front of the amplifier circuit group 634. The input distribution switch 601 has a first terminal connected to the RF signal input terminal 651, a second terminal connected to the input terminal of the high power UB amplifier circuit 635, and an input terminal of the low power UB amplifier circuit 636 It has a third end connected to.

As described above, communication in the high power band and communication in the low power band are not performed simultaneously. For this reason, either one of the input signals RFinH and RFinL is supplied to the RF signal input terminal 651 .

The *350 input distribution switch 601 is configured such that the first end can be connected to either the second end or the third end.

In the present embodiment, the input distribution switch 601 electrically connects the first end and the second end based on a control signal output from the control unit of the mobile communication device, for example. Further, the input distribution switch 601 electrically connects the first end and the third end based on a control signal, for example.

The output distribution switch 602a is configured such that the TDD filter circuit 622a can be connected to either the high-power UB amplifier circuit 635, the low-power UB amplifier circuit 636, or the low noise amplifier 631, The TDD filter circuit 622b is configured to be connectable to any one of the high power UB amplifier circuit 635, the low power UB amplifier circuit 636, and the low noise amplifier 631, and the TDD filter circuit 622c is configured to be connectable to either of the low-power UB amplifier circuit 636 and the low-noise amplifier 631, and the TDD filter circuit 622d is connected to the low-power UB amplifier circuit 636 and the low-noise amplifier 631 It is configured to be able to connect to any one of them.

In other words, the output distribution switch 602a is configured such that the high-power UB amplifier circuit 635 can be connected to any one of the filter circuits 622a and 622b for TDD, and the low-power UB amplifier circuit 636 for TDD It is configured to be connectable to any one of the filter circuits 622a, 622b, 622c, and 622d, and the low noise amplifier 631 is connected to any one of the TDD filter circuits 622a, 622b, 622c, and 622d. configured to be accessible.

In this embodiment, the output distribution switch 602a has first to seventh terminals connected in the same manner as the first to seventh terminals of the output distribution switch 602 shown in FIG. 27 .

The output distribution switch 602a electrically connects a first end and any one of a sixth end and a seventh end based on a control signal output from a control unit of a mobile communication device, for example. Further, the output distribution switch 602a electrically connects the second terminal and any one of terminals from the fourth to seventh terminals on the basis of the control signal. Further, the output distribution switch 602a electrically connects the third terminal and any one of the terminals from the fourth to seventh terminals based on the control signal.

(Connection form of switch when transmitting amplified signal (RF7H) by high power output)

The input distribution switch 601, the output distribution switch 602a, and the switch 603 operate in conjunction. When communication in the high power band is performed, only the input signal RFinH is supplied to the RF signal input terminal 651. The input distribution switch 601 electrically connects its first terminal and its second terminal during a transmission period and a reception period when an RF signal belonging to a high power band is transmitted by means of a high power output.

Accordingly, during the transmission period in which the RF signal belonging to the high power band is transmitted by the high power output, the input signal RFinH supplied to the RF signal input terminal 651 passes through the input distribution switch 601 to the high power UB amplifier circuit 635, and is amplified by the high-power UB amplifier circuit 635.

The output distribution switch 602a and the switch 603 are output distribution switches 602 and 603 shown in FIG. 27 when transmitting and receiving RF signals belonging to HP band 1 and when transmitting and receiving RF signals belonging to HP band 2. Each operates similarly to the switch 603.

(Connection form of the switch when the amplified signal (RF7H) is transmitted with a low power output or less)

Even for an RF signal belonging to a high power band, there are cases in which the RF signal can be transmitted with less than a low power output because the distance between the mobile communication unit and the base station is short, for example. In this case, the input distribution switch 601 electrically connects its first terminal and its third terminal in a transmission period and a reception period when an RF signal belonging to a high power band is transmitted with a low power output or less.

1. When transmitting an RF signal belonging to HP band 1 below the low power output

The output distribution switch 602a electrically switches its 3rd and 7th stages during a transmission period when transmitting an RF signal belonging to HP band 1 with a low power output or lower (hereinafter sometimes referred to as an HPB1 low power transmission period). connect to Meanwhile, the output distribution switch 602a electrically insulates its third and seventh terminals during the receiving period of the RF signal belonging to HP band 1 and electrically connects its second and seventh terminals. The switch 603 electrically connects its first terminal and its fifth terminal in the HPB1 low power transmission period and reception period.

Accordingly, during the HPB1 low power transmission period, the input signal RFinH supplied to the RF signal input terminal 651 is supplied to the low power UB amplifier circuit 636 via the input distribution switch 601. The low-power UB amplifying circuit 636 amplifies the input signal RFinH and generates an amplified signal RF7H having a level transmittable below the low power output. The amplified signal RF7H generated by the low-power UB amplifier circuit 636 is supplied to the RF signal output terminal 653 through the output distribution switch 602a, the TDD filter circuit 622a, and the switch 603. .

Meanwhile, during the receiving period of the RF signal belonging to HP band 1, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622a, and the output distribution switch 602a. is supplied to the low noise amplifier 631 through

2. When transmitting an RF signal belonging to HP band 2 below low power output

The output distribution switch 602a electrically disconnects its third and sixth stages during a transmission period when transmitting an RF signal belonging to the HP band 2 with a low power output or lower (hereinafter sometimes referred to as an HPB2 low power transmission period). connect to Meanwhile, the output distribution switch 602a electrically insulates its third and sixth terminals during the receiving period of the RF signal belonging to HP band 2 and electrically connects its second and sixth terminals. The switch 603 electrically connects its second terminal and its fifth terminal in the HPB2 low power transmission period and reception period.

Thus, during the HPB2 low power transmission period, the input signal RFinH supplied to the RF signal input terminal 651 is supplied to the low power UB amplifier circuit 636 via the input distribution switch 601. The low-power UB amplifying circuit 636 amplifies the input signal RFinH and generates an amplified signal RF7H having a level transmittable below the low power output. The amplified signal RF7H generated by the low-power UB amplifier circuit 636 is supplied to the RF signal output terminal 653 through the output distribution switch 602a, the TDD filter circuit 622b, and the switch 603. .

Meanwhile, during the receiving period of the RF signal belonging to the HP band 2, the input signal RFinR supplied to the RF signal output terminal 653 passes through the switch 603, the TDD filter circuit 622b, and the output distribution switch 602a. is supplied to the low noise amplifier 631 through

(Connection form of switch when transmitting and receiving RF signals belonging to the low power band)

When communication in the low power band is performed, only the input signal RFinL is supplied to the RF signal input terminal 651. The input distribution switch 601 electrically connects a first terminal and a third terminal thereof during a transmission period and a reception period of an RF signal belonging to a low power band.

As a result, during the transmission period of the RF signal belonging to the low power band, the input signal RFinL supplied to the RF signal input terminal 651 passes through the input distribution switch 601 to the input terminal of the low power UB amplifier circuit 636. is supplied and amplified by the low-power UB amplifier circuit 636.

The output distribution switch 602a and the switch 603 are output distribution switches 602 and 603 shown in FIG. 27 when transmitting and receiving RF signals belonging to LP band 1 and when transmitting and receiving RF signals belonging to LP band 2. Each operates similarly to the switch 603.

Further, in the power amplifier circuit 15D, the configuration in which the output distribution switch 602a, the TDD filter circuit group 622, and the switch 603 are provided has been described, but is not limited thereto. The power amplifier circuit 15D includes the output distribution switch 604 shown in FIG. 26 instead of the output distribution switch 602a, the TDD filter circuit group 622, and the switch 603, the TDD filter circuit group 621, and a switch 605 may be provided.

In this case, the output distribution switch 604 configures the TDD filter circuit 621a to be connected to either the high power UB amplifier circuit 635, the low power UB amplifier circuit 636, or the low noise amplifier 631 Also, the TDD filter circuit 621b is configured to be connectable to either the low power UB amplifier circuit 636 or the low noise amplifier 631.

Further, in the power amplifier circuit 15 according to the fifth embodiment, a configuration in which the third frequency band is a high power band has been described, but it is not limited thereto. The third frequency band may be configured as another band such as a low band, a low mid band, a mid band, a high band, or an ultra high band.

Further, in the power amplifying circuit 15 according to the fifth embodiment, a configuration in which the fourth frequency band is a low power band has been described, but it is not limited to this. The fourth frequency band may be another band such as a low band, a low mid band, a mid band, a high band, or an ultra high band.

In the power amplifier circuit 15 according to the fifth embodiment, the high-power UB amplifier circuit 635 has the same circuit configuration as the low-power MB amplifier circuit 102 and the fixed adjustment circuit 103 (see FIG. 4). Although the structure having was described, it is not limited to this. The high-power UB amplifier circuit 635 may have a circuit configuration similar to that of the high-power wideband amplifier circuit 202 and the first variable adjustment circuit 203 (see Fig. 4). Further, the high-power UB amplifier circuit 635 may have a circuit configuration similar to that of the high-power wideband amplifier circuit 212 and the first variable adjustment circuit 213 (see Fig. 11).

In the power amplifier circuit 15 according to the fifth embodiment, the low-power UB amplifier circuit 636 has the same circuit configuration as the low-power MB amplifier circuit 102 and the fixed adjustment circuit 103 (see Fig. 4). Although the structure having was described, it is not limited to this. The low-power UB amplifier circuit 636 may have a circuit configuration similar to that of the high-power wideband amplifier circuit 202 and the first variable adjustment circuit 203 (see Fig. 4). Further, the low-power UB amplifier circuit 636 may have a circuit configuration similar to that of the high-power wideband amplifier circuit 212 and the first variable adjustment circuit 213 (see Fig. 11).

In the above, exemplary embodiments of the present invention have been described. In the power amplifying circuit 11A, the low-power MB amplifying circuit 102 amplifies the mid-band input signal RFin1 and outputs amplified signals RF3p and RF3m having a first power. The high-power wideband amplifier circuit 202 amplifies an input signal RFin2 of a mid-band or a high-band different from the mid-band, and outputs amplified signals RF4p and RF4m having a second power different from the first power. The first variable adjustment circuit 203 is formed between the high power wideband amplifier circuit 202 and the transmission line 64, and the first impedance when the transmission line 64 is viewed from the high power wideband amplifier circuit 202 is configured to be adjustable.

In this way, by the configuration in which the first impedance can be adjusted by the first variable adjustment circuit 203, the distortion of the RF signal due to the impedance mismatch between the high-power broadband amplifier circuit 202 and the transmission line 64 and the power efficiency Deterioration can be suppressed in a wide frequency band from the mid-band to the high-band. That is, a signal amplified in a wide frequency band by one high-power broadband amplifier circuit 202 without preparing two amplifier circuits for the mid-band and the high-band as the second power amplifier circuit. (RF4p and RF4m) can be efficiently supplied. Therefore, while efficiently supplying an RF signal in a wide frequency band, an increase in circuit scale can be suppressed.

Further, in the power amplifying circuit 13, the high-power HB amplifying circuit 222 amplifies the high-band input signal RFin4 and outputs amplified signals RF6p and RF6m having a first power. The low-power wideband amplifier circuit 122 amplifies the mid-band or high-band input signal RFin3 and outputs amplified signals RF5p and RF5m having second powers different from the first power. The first variable adjustment circuit 133 is formed between the low power wideband amplifier circuit 122 and the transmission line 63, and the first impedance when the transmission line 63 is viewed from the low power wideband amplifier circuit 122 is configured to be adjustable.

In this way, by the configuration in which the first impedance can be adjusted by the first variable adjustment circuit 133, the distortion of the RF signal due to the impedance mismatch between the low-power wideband amplifier circuit 122 and the transmission line 63 and the power efficiency Deterioration can be suppressed in a wide frequency band from the mid-band to the high-band. That is, a signal amplified in a wide frequency band by one low-power wideband amplifier circuit 122 without preparing two amplifier circuits for the mid-band and the high-band as the second power amplifier circuit. (RF5p and RF5m) can be efficiently supplied. Therefore, while efficiently supplying an RF signal in a wide frequency band, an increase in circuit scale can be suppressed.

In addition, the high power broadband amplifier circuit 202 includes a power stage differential amplifier circuit 43 .

With such a configuration, the amplifier in the case of amplifying the output of each of the amplifiers 43a and 43b constituting the power stage differential amplifier circuit 43 in a single method (for example, the power stage single amplifier circuit 45) It can be set to approximately half of the output from the constituting amplifier 45a. That is, the load impedance seen from each of the amplifiers 43a and 43b can be approximately twice the load impedance seen from the amplifier 45a. As a result, since the amount of impedance conversion by the first variable adjustment circuit 203 can be reduced, the frequency band in which the first variable adjustment circuit 203 can adjust the first impedance satisfactorily can be widened. Therefore, by amplifying the input signal RFin2 using the power stage differential amplification circuit 43, the frequency band can be widened compared to the case of amplifying the input signal RFin2 in a single method.

In addition, in the power amplifier circuit 11A, the power stage differential amplifier circuit 43 included in the high-power wideband amplifier circuit 202 amplifies the mid-band or high-band input signal RFin2, and generates a first power greater than the first power. It outputs amplified signals (RF4p and RF4m) with 2 powers.

For example, the single method such as the power stage single amplifier circuit 45 included in the high power wideband amplifier circuit 212 and the power stage differential amplifier circuit 43 included in the high power wideband amplifier circuit 202 are the same. When an output voltage is supplied, an output voltage approximately twice the output voltage of each of the amplifiers 43a and 43b constituting the power stage differential amplification circuit 43 is applied to the amplifier 45a constituting the power stage single amplifier circuit 45. It is required. For this reason, when supplying power equivalent to that of a differential amplification circuit using a single method, approximately twice the current is required. To realize this, lowering the output impedance is required, but lowering the output impedance is generally difficult. In contrast, the input signal RFin2 is amplified by the amplifiers 43a and 43b constituting the power stage differential amplifier circuit 43, so that the output voltage of the amplifiers 43a and 43b is converted into the output voltage of the amplifier 45a. Since the output impedance can be reduced to about half, the amplified signals RF4p and RF4m having a second power greater than the first power can be output without increasing the current by lowering the output impedance. That is, a structure in which the input signal RFin2 is amplified to a transmittable level by the transmit power of PC 2 can be easily realized.

Also, in the power amplifier circuit 13, the second power is smaller than the first power. The high-power HB amplification circuit 222 includes a power stage differential amplification circuit 43 .

In this way, when the output voltage of each of the amplifiers 43a and 43b is amplified in a single method by the configuration in which the input signal RFin4 is amplified by the amplifiers 43a and 43b constituting the power stage differential amplifier circuit 43 Since the output voltage of the amplifier 45a can be set to approximately half of the output voltage of the amplifier 45a, it is possible to output the amplified signals RF6p and RF6m having a first power higher than the second power without increasing the current by lowering the output impedance. That is, a configuration in which the input signal RFin4 is amplified to a transmittable level by the transmit power of PC 2 can be easily realized.

In addition, in the power amplifier circuit 12, the low-power wideband amplifier circuit 122 amplifies the mid-band or high-band input signal RFin3 and outputs amplified signals RF5p and RF5m having a first power. The second variable adjustment circuit 123 is formed between the low power wideband amplifier circuit 122 and the transmission line 63, and the second impedance when the transmission line 63 is viewed from the low power wideband amplifier circuit 122 is configured to be adjustable. The high-power broadband amplifier circuit 202 amplifies a mid-band or high-band input signal RFin2 and outputs amplified signals RF4p and RF4m having a second power different from the first power. The first variable adjustment circuit 203 is formed between the high power wideband amplifier circuit 202 and the transmission line 64, and the first impedance when the transmission line 64 is viewed from the high power wideband amplifier circuit 202 is configured to be adjustable.

In this way, the low-power broadband amplifying circuit 122 can be operated to increase power efficiency in a wide frequency band from the mid-band to the high-band by the configuration in which the second impedance can be adjusted by the second variable adjustment circuit 123. there is. As a result, a wide frequency band can be covered by one low-power wideband amplifier circuit 122 without preparing two amplifier circuits for the mid-band and high-band as the first power amplifier circuit. can

In addition, in the power amplifier circuit 11A, the first variable adjustment circuit 203A includes a wideband matching circuit 301 configured to be able to adjust the first impedance with respect to the frequency of the fundamental wave of the amplified signals RF4p and RF4m. .

With this configuration, the high-power broadband amplifier circuit 202 can be operated so as to increase power efficiency in a wide frequency band from the mid-band to the high-band. This makes it possible to supply good amplified signals (RF4p and RF4m) with sufficient power.

In addition, in the power amplifier circuit 11A, the first variable adjustment circuit 203B includes a wideband termination circuit 401 configured to be able to adjust the first impedance with respect to the frequency of the harmonics of the amplified signals RF4p and RF4m.

Since the harmonics of the amplified signals RF4p and RF4m can be attenuated by this configuration, it is possible to supply good amplified signals RF4p and RF4m suppressed from distortion due to harmonics.

In addition, in the power amplifier circuit 12, the second variable adjustment circuit 123 includes a broadband matching circuit 301 configured to be able to adjust the second impedance with respect to the frequency of the fundamental wave of the amplified signals RF5p and RF5m. .

With this configuration, the low-power wideband amplifying circuit 122 can be operated so as to increase power efficiency in a wide frequency band from the mid-band to the high-band. This makes it possible to supply good amplified signals (RF5p and RF5m) with sufficient power.

In addition, in the power amplification circuit 12, the second variable adjustment circuit 123 includes a broadband termination circuit 401 configured to be able to adjust the second impedance with respect to the frequency of the harmonics of the amplification signals RF5p and RF5m.

Since the harmonics of the amplified signals RF5p and RF5m can be attenuated by such a configuration, it is possible to supply good amplified signals RF5p and RF5m in which distortion due to harmonics is suppressed.

Further, in the power amplifier circuit 14, the output distribution switch 502 includes the low power MB amplifier circuit 102, the FDD filter circuit group 521 at the rear of the low power MB amplifier circuit 102, and the high power broadband amplifier circuit. It is provided between the TDD filter circuit group 522 at the rear stage of (202). And the output distribution switch 502 enables the low-power MB amplifier circuit 102 to be connected to any one of the FDD filter circuits 521a, 521b, and 521c and the TDD filter circuits 522a, 522b, and 522c. It consists of

With this configuration, for example, when communication is performed by the FDD method, the output signal RFout1 from the low-power MB amplifier circuit 102 can be supplied to any one of the FDD filter circuits 521a, 521b, and 521c. can Further, for example, in the case of performing communication by the TDD method, when the distance between the mobile communication unit and the base station is close, and the RF signal can be transmitted by the transmission power of the PC 3, or the transmission power of the PC 3 is equal to the transmission power of the RF signal. When the upper limit is acceptable, the input signal RFin2 is amplified by the low-power MB amplifier circuit 102. In addition, the output signal RFout1 from the low-power MB amplifier circuit 102 may be supplied to any one of the TDD filter circuits 522a, 522b, and 522c.

Further, in the power amplification circuit 14, the output distribution switch 502 includes the low power wideband amplification circuit 122, the FDD filter circuit group 521 at the rear of the low power wideband amplification circuit 122, and the high power HB amplification It is provided between the TDD filter circuit group 522 at the rear stage of the circuit 222. And the output distribution switch 502 enables connection of the low-power wideband amplifier circuit 122 to any one of the FDD filter circuits 521a, 521b, and 521c and the TDD filter circuits 522a, 522b, and 522c. It consists of

With such a configuration, for example, when communication is performed by the FDD method, the output signal RFout3 from the low-power wideband amplifier circuit 122 can be supplied to any one of the FDD filter circuits 521a, 521b, and 521c. can Further, for example, in the case of performing communication by the TDD method, when the distance between the mobile communication unit and the base station is close, and the RF signal can be transmitted by the transmission power of the PC 3, or the transmission power of the PC 3 is equal to the transmission power of the RF signal. When the upper limit is acceptable, the input signal RFin4 is amplified by the low-power wideband amplifier circuit 122. In addition, the output signal RFout3 from the low-power wideband amplification circuit 122 may be supplied to any one of the TDD filter circuits 522a, 522b, and 522c.

Further, in the power amplifier circuit 14, the input distribution switch 501 includes a first terminal to which the input signal RFin2 is supplied, a second terminal connected to the high-power broadband amplifier circuit 202, and a low-power MB amplifier circuit 102. ), and the first end is configured to be connectable to any one of the second end and the third end.

With this configuration, the input signal RFin2 used in, for example, TDD communications can be supplied to the high-power broadband amplifier circuit 202 or the low-power MB amplifier circuit 102 according to the required transmission power. In this way, the power efficiency of the high power wideband amplifier circuit 202 and the low power MB amplifier circuit 102 can be improved.

Further, in the power amplifier circuit 14, the input distribution switch 501 includes a first terminal to which the input signal RFin4 is supplied, a second terminal connected to the high power HB amplifier circuit 222, and a low power wideband amplifier circuit 122 ), and the first end is configured to be connectable to any one of the second end and the third end.

With this configuration, for example, the input signal RFin4 used for communication of the TDD method can be supplied to the high-power HB amplifier circuit 222 or the low-power wideband amplifier circuit 122 according to the required transmission power. As a result, the power efficiency of the high-power HB amplifier circuit 222 and the low-power wideband amplifier circuit 122 can be improved.

Further, in the power amplifier circuit 15B, the high power UB amplifier circuit 635 amplifies the input signal RFinH of the high power band and outputs the amplified signal RF7H having the third power. The low power UB amplifier circuit 636 amplifies the input signal RFinL of the low power band different from the high power band, and outputs the amplified signal RF7L having a fourth power lower than the third power. The low noise amplifier 631 amplifies the high power band or low power band input signal RFinR and outputs the amplified signal RF7R. Filter circuits 621a and 621b for TDD are formed after the high-power UB amplifier circuit 635 and the low-power UB amplifier circuit 636, respectively. The output distribution switch 604 is provided between the amplifier circuit group 634 and the low noise amplifier 631 and the TDD filter circuit group 621. The output distribution switch 604 is configured such that the filter circuit 621a for TDD can be connected to either the high-power UB amplifier circuit 635 or the low noise amplifier 631, and the filter circuit 621b for TDD is connected. It is configured to be connectable to either of the power UB amplifier circuit 636 and the low noise amplifier 631. The switch 605 is installed between the filter circuit group 621 for TDD and the third antenna installed at the rear end of the filter circuit group 621 for TDD. The switch 605 is configured such that any one of the TDD filter circuits 621a and 621b can be connected to the third antenna.

In this way, by installing the output distribution switch 604 and the switch 605 and appropriately switching the connection form of the output distribution switch 604 and the switch 605, the amplified signal RF7H belonging to the high power band and the input The TDD filter circuit 621a can be shared for noise removal of the signal RFinR, and the TDD filter circuit 621b is used for noise removal of the amplified signal RF7L and the input signal RFinR belonging to the low power band. can be shared. In addition, the low noise amplifier 631 can be used for amplification of the input signal RFinR belonging to the high power band and the input signal RFinR belonging to the low power band. As a result, compared to a configuration in which separate filters are formed for the transmission signal and the reception signal, or separate low noise amplifiers are provided for the reception signal belonging to the high power band and the reception signal belonging to the low power band, respectively, the power amplifier circuit ( 15B) can be reduced in circuit size.

In the power amplifier circuit 15C, filter circuits 622a and 622b for TDD are formed after the high-power UB amplifier circuit 635. Filter circuits 622c and 622d for TDD are formed after the low-power UB amplifier circuit 636. The output distribution switch 602 is configured such that the TDD filter circuit 622a can be connected to either the high power UB amplifier circuit 635 or the low noise amplifier 631, and the TDD filter circuit 622b can be connected to the high power It is configured to be connectable to either one of the UB amplifier circuit 635 and the low noise amplifier 631, and the TDD filter circuit 622c is connected to either the low power UB amplifier circuit 636 and the low noise amplifier 631 It is configured to be connectable, and also configured to be able to connect the TDD filter circuit 622d to either the low power UB amplifier circuit 636 or the low noise amplifier 631. The switch 603 is configured such that any one of the TDD filter circuits 622a, 622b, 622c, and 622d can be connected to the third antenna.

With this configuration, the amplified signal RF7H and the input signal RFinR are subjected to noise removal for each of HP band 1 and HP band 2 included in the high power band, and the TDD filter circuit 622a or 622b can be shared. can In addition, noise removal of the amplified signal RF7L and the input signal RFinR is performed for each of the LP band 1 and LP band 2 included in the low power band, and the TDD filter circuit 622c or 622d can be shared. In addition, the low noise amplifier 631 can be used for amplification of the input signal RFinR belonging to one of HP band 1, HP band 2, LP band 1, and LP band 2 band 2. As a result, the circuit scale of the power amplifier circuit 15C can be reduced compared to a configuration in which separate filters are formed for the transmission signal and the reception signal, or a low noise amplifier is provided for each band to which the reception signal belongs.

In addition, in the power amplifier circuit 15D, the input distribution switch 601 is provided at the front stage of the amplifier circuit group 634, and the first stage to which either one of the input signals RFinH and RFinL is supplied, and the high-power UB amplifier circuit It has a second terminal connected to 635 and a third terminal connected to a low-power UB amplifier circuit 636. And the input distribution switch 601 is comprised so that the 1st end can be connected to any one of a 2nd end and a 3rd end. The output distribution switch 602a can connect each of the TDD filter circuits 622a and 622b to any one of the high power UB amplifier circuit 635, the low power UB amplifier circuit 636, and the low noise amplifier 631 Also, each of the filter circuits 622c and 622d for TDD is configured to be connectable to either one of the low power UB amplifier circuit 636 and the low noise amplifier 631.

With this configuration, for example, when the input signal RFinH belonging to the high power band is transmitted by high power output, the input signal RFinH is supplied to the high power UB amplifier circuit 635, and the high power UB The amplified signal RF7H from the amplifier circuit 635 can be supplied to the TDD filter circuit 622a or 622b. This makes it possible to maintain a state of good power efficiency in the high-power UB amplifier circuit 635. In addition, for example, when the input signal RFinH belonging to the high power band is to be transmitted below the low power output, the input signal RFinH is supplied to the low power UB amplifier circuit 636, and the low power UB amplifier circuit 636 ) can be supplied to the TDD filter circuit 622a or 622b. This avoids a decrease in power efficiency when the high-power UB amplifier circuit 635 amplifies the input signal RFinH when the input signal RFinH is transmitted at a low power output or less, and low-power UB amplification In the circuit 636, the input signal RFinH can be amplified with good power efficiency.

In addition, each embodiment described above is for facilitating understanding of the present invention, and is not intended to limit and interpret the present invention. While this invention can be changed/improved without departing from the meaning, the present invention also includes the equivalent. That is, those skilled in the art appropriately added design changes to each embodiment are also included in the scope of the present invention as long as they have the characteristics of the present invention. For example, each element included in each embodiment and its arrangement, material, conditions, shape, size, etc. are not limited to those illustrated and can be appropriately changed. In addition, each embodiment is an example, and it goes without saying that partial substitution or combination of the structures shown in different embodiments is possible, and these are also included in the scope of the present invention as long as the features of the present invention are included.

1: Transmitting device 6: Transmitting/receiving unit
11, 12, 13, 14, 15: power amplification circuit 16: RF signal generation circuit
21, 22, 23, 24, 29: semiconductor chip 41: driver stage single amplifier circuit
42: stage-to-stage matching circuit 43: power stage differential amplifier circuit
44: stage-to-stage matching circuit 45: power stage single amplifier circuit
61, 62, 63, 64: Transmission line 71A: Amplifier circuit group
102 Low-power MB amplifier circuit 103 Fixed adjustment circuit
112 low power MB amplifier circuit 113 fixed adjustment circuit
122: low-power broadband amplifier circuit 123: second variable adjustment circuit
133 first variable adjustment circuit 202 high power broadband amplifier circuit
203 first variable adjustment circuit 212 high power broadband amplifier circuit
213 first variable adjustment circuit 222 high power HB amplifier circuit
233 Fixed adjustment circuit 301 Broadband matching circuit
302 matching circuit 306 broadband matching circuit
307 matching circuit 401 broadband termination circuit
402 termination circuit 406 broadband termination circuit
407 Termination circuit 521 Filter circuit for FDD
522 filter circuit for TDD 523, 524, 525 filter circuit
531, 532: low noise amplifier 601: input distribution switch
602, 602a: output distribution switch 603: switch
604: output distribution switch 605: switch
621, 622 filter circuit for TDD 631 low noise amplifier
634 Amplifier circuit group 635 High power UB amplifier circuit
636 Low power UB amplifier circuit 641 Semiconductor chip

Claims (3)

a third amplifying circuit for amplifying a first transmission signal in a third frequency band and outputting a third amplified signal having a third power;
a fourth amplifying circuit for amplifying a second transmission signal in a fourth frequency band different from the third frequency band and outputting a fourth amplified signal having a fourth power smaller than the third power;
a fifth amplifier circuit for amplifying a received signal of the third frequency band or the fourth frequency band and outputting a fifth amplified signal;
A first filter formed after the third amplifier circuit;
a second filter formed after the fourth amplifier circuit;
formed between a circuit group including the third amplifier circuit, the fourth amplifier circuit, and the fifth amplifier circuit and a filter group including the first filter and the second filter; A fifth switch section configured to be connectable to any one of three amplifier circuits and the fifth amplifier circuit, and configured to connect the second filter to either one of the fourth amplifier circuit and the fifth amplifier circuit;
It is formed between the filter group including the first filter and the second filter and a seventh circuit formed at a rear end of the filter group including the first filter and the second filter, and the first filter and the second filter A power amplifier circuit comprising a sixth switch section configured to enable connection of either of the two filters to the seventh circuit. According to claim 1,
A third filter formed after the third amplifier circuit;
A fourth filter formed after the fourth amplifier circuit is further provided,
The fifth switch unit is further configured to allow connection of the third filter to either the third amplifier circuit or the fifth amplifier circuit, and further connects the fourth filter to the fourth amplifier circuit or the fifth amplifier circuit. It is configured to be connectable to any one of the circuits,
The power amplifier circuit of claim 1 , wherein the sixth switch unit is configured to connect any one of the first filter, the second filter, the third filter, and the fourth filter to the seventh circuit. According to claim 1 or 2,
a first end formed in front of the third amplifier circuit and the fourth amplifier circuit, to which either the first transmission signal or the second transmission signal is supplied, and a second terminal connected to the third amplifier circuit; a seventh switch section having a third terminal connected to the fourth amplifier circuit and configured to connect the first terminal to either the second terminal or the third terminal;
The fifth switch unit is configured to enable connection of the first filter to any one of the third amplifier circuit, the fourth amplifier circuit, and the fifth amplifier circuit, and further connects the second filter to the fourth amplifier circuit. and a power amplifier circuit configured to be connectable to any one of the fifth amplifier circuits.

Images