KR20230021055A - Display apparatus - Google Patents

Abstract

For a display device that can guarantee a long life of the display device and minimize the occurrence of defects such as disconnection, etc. during the manufacturing process, the present invention provides a display device including: a substrate having a first bending area located between a first area and a second area and bent around a first bending axis extending in a first direction; a first inorganic insulating layer disposed on the substrate and having a first opening or a first groove corresponding to the first bending area; an organic material layer filling at least a portion of the first opening or first groove; and a first conductive layer extending from the first area to the second area through the first bending area and located on the organic layer.

Description

Display apparatus {Display apparatus}

Embodiments of the present invention relate to a display device, and more particularly, to a display device capable of ensuring a long lifespan of the display device and minimizing the occurrence of defects such as disconnection during a manufacturing process.

In general, a display device has a display unit positioned on a substrate. By bending at least a portion of the display device, visibility at various angles may be improved or the area of the non-display area may be reduced.

However, in the case of a conventional display device, problems such as defects occurring in the process of manufacturing the bent display device or shortening the lifespan of the display device have occurred.

An object of the present invention is to solve various problems including the above problems, and to provide a display device capable of minimizing the occurrence of defects such as disconnection during the manufacturing process while ensuring a long life of the display device. . However, these tasks are illustrative, and the scope of the present invention is not limited thereby.

According to one aspect of the present invention, a substrate having a first bending area positioned between a first area and a second area and bent about a first bending axis extending in a first direction; A first inorganic insulating layer having a first opening or a first groove corresponding to one bending area, an organic material layer filling at least a part of the first opening or first groove, and passing through the first bending area in the first area. A display device including a first conductive layer extending into the second region and positioned on the organic material layer is provided.

The first opening or the first groove may overlap the first bending area. Furthermore, an area of the first opening or the first groove may be larger than that of the first bending area.

A protective film positioned on a surface of the substrate opposite to the direction in which the first inorganic insulating layer is positioned and having an opening corresponding to the first bending region may be further included. In this case, an area of the opening may be larger than an area of the first bending area. Furthermore, an area of the opening may be larger than an area of the first bending area and smaller than an area of the first opening or the first groove.

Meanwhile, the organic material layer may cover an inner surface of the first opening or the first groove.

The organic material layer may have a concavo-convex surface on at least a portion of an upper surface. In this case, the organic material layer may have the uneven surface only within the first opening or the first groove. Furthermore, an area of the portion of the organic material layer having the concave-convex surface may be larger than an area of the first bending region but smaller than an area of the first opening or first groove.

The organic material layer may have the concavo-convex surface by having a plurality of grooves extending in the first direction on an upper surface thereof.

A shape of an upper surface of the first conductive layer on the organic material layer may correspond to a shape of an upper surface of the organic material layer.

In a second direction crossing the first direction, the concavo-convex surface has a plurality of protrusions, and a distance between the plurality of protrusions at the central portion of the first opening or first groove is It may be shorter than the distance between the plurality of protrusions in other parts of one groove.

In a second direction crossing the first direction, the concavo-convex surface has a plurality of protrusions, and the height from the upper surface of the substrate at the central portion of the first opening or the first groove to the plurality of protrusions is It may be higher than the height from the upper surface of the substrate to the plurality of protrusions in the first opening or other portion in the first groove.

A stress neutralization layer disposed above the first conductive layer may be further included, and at least a portion of an upper surface of the stress neutralization layer may have a shape corresponding to the concave-convex surface. In this case, the upper surface of the stress neutralization layer may have the same shape as the concavo-convex surface. Alternatively, all protrusions on the upper surface of the stress neutralization layer may correspond to at least some of the protrusions on the uneven surface.

The organic material layer has a concavo-convex surface having a plurality of protrusions on at least a portion of an upper surface in a second direction crossing the first direction, and the plurality of protrusions are adjacent to the inner surface of the first opening or first groove. A distance between them may be shorter than a distance between the plurality of protrusions in the first opening or another portion of the first groove.

The organic material layer has a concavo-convex surface having a plurality of protrusions on at least a portion of the upper surface in a second direction crossing the first direction, and the upper surface of the substrate at a portion adjacent to the inner surface of the first opening or first groove. A height from the upper surface of the substrate to the plurality of protrusions may be higher than a height from the upper surface of the substrate to the plurality of protrusions in another portion of the first opening or first groove.

The organic material layer may have a plurality of islands extending in the first direction and spaced apart from each other in a second direction crossing the first direction.

In this case, the shape of the top surface of the plurality of islands of the first conductive layer may correspond to the shape of the top surface of the plurality of islands.

A distance between the plurality of islands in a central portion of the first opening or first groove may be shorter than a distance between the plurality of islands in another portion of the first opening or first groove.

The height from the top surface of the substrate at the central portion of the first opening or the first groove to the top surface of the plurality of islands is the height from the top surface of the substrate at another portion in the first opening or first groove to the top surface of the plurality of islands. It may be higher than the height to the top of the fields.

Meanwhile, a thin film transistor disposed in the first region or the second region and including a source electrode, a drain electrode, and a gate electrode, an encapsulation layer covering the display element on the first region, and a touch disposed on the encapsulation layer. A touch electrode for a screen is further provided, and the first conductive layer may include the same material as the touch electrode.

In this case, a touch protection layer covering the touch electrode and the first conductive layer may be further provided.

On the other hand, a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer interposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, covering the display element on the first region, An encapsulation layer may be further provided, and the organic material layer may include the same material as the organic encapsulation layer.

A second conductive layer disposed in the first area or the second area and electrically connected to the first conductive layer may be further included.

In this case, the elongation rate of the first conductive layer may be greater than the elongation rate of the second conductive layer.

A thin film transistor disposed in the first region or the second region and including a source electrode, a drain electrode, and a gate electrode, wherein the first conductive layer is positioned on the same layer as the source electrode and the drain electrode, The second conductive layer may be positioned on the same layer as the gate electrode.

In this case, the thin film transistor may further include a semiconductor layer, and the first inorganic insulating layer may be interposed between the semiconductor layer and the gate electrode.

Alternatively, the first inorganic insulating layer may be interposed between the thin film transistor and the substrate. Furthermore, the thin film transistor may further include a semiconductor layer, and the organic material layer may extend to be interposed between the semiconductor layer and the gate electrode.

a thin film transistor disposed in the first region or the second region and including a source electrode, a drain electrode, and a gate electrode; and a planarization layer covering the thin film transistor and including an organic material, wherein the organic material layer and the planarization layer may contain the same material.

On the other hand, a thin film transistor disposed in the first region or the second region and including a source electrode, a drain electrode, and a gate electrode, and an interlayer insulating film interposed between the source electrode, the drain electrode, and the gate electrode. , The organic material layer may include the same material as the interlayer insulating layer.

In this case, the organic material layer may be integral with the interlayer insulating layer.

Meanwhile, a first thin film transistor disposed in the first region or the second region and including a first semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode, a second semiconductor layer, and a second source A second thin film transistor including an electrode, a second drain electrode, and a second gate electrode is further provided, wherein the distance between the layer where the first gate electrode is located and the substrate is the distance between the layer where the second gate electrode is located and the substrate The first inorganic insulating layer is interposed between the first semiconductor layer and the first gate electrode and between the second semiconductor layer and the second gate electrode, and the organic material layer comprises the first inorganic insulating layer. It may extend to be interposed between the insulating layer and the second gate electrode. Furthermore, a second inorganic insulating layer disposed on the organic material layer and having a second opening or a second groove corresponding to the first bending region may be further provided.

a second conductive layer disposed in the first region or the second region, including the same material as the first gate electrode, and electrically connected to the first conductive layer; It may contain the same material as the gate electrode.

The substrate may have a second bending area extending in a second direction crossing the first direction within the first area, and may be bent about a second bending axis extending in the second direction.

In this case, the substrate may have a chamfered shape at a corner closest to a portion where the first bending axis and the second bending axis intersect.

Alternatively, the radius of curvature in the first bending area may be smaller than the radius of curvature in the second bending area. Furthermore, the first inorganic insulating layer may be continuous in at least a portion of the first region including the second bending region.

Other aspects, features, and advantages other than those described above will become clear from the detailed description, claims, and drawings for carrying out the invention below.

According to one embodiment of the present invention made as described above, it is possible to implement a display device capable of ensuring a long lifespan of the display device and minimizing the occurrence of defects such as disconnection during the manufacturing process. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view schematically illustrating a part of a display device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a part of the display device of FIG. 1 .
3 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
4 is a schematic cross-sectional view of a portion of a display device according to a comparative example of the present invention.
5 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
6 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
7 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
8 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
9 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
10 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
11 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
12 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
13 to 15 are cross-sectional views schematically illustrating a process of forming a part of FIG. 12 .
16 are cross-sectional views schematically illustrating a process of forming a part of FIG. 12 .
17 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
18 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
19 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
20 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
21 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
22 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
23 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
24 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
25 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
26 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
27 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
28 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
29 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
30 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
31 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention.
32 is a plan view schematically illustrating a part of a display device according to another embodiment of the present invention.
33 is a plan view schematically illustrating a part of a display device according to another exemplary embodiment of the present invention.
34 is a perspective view schematically illustrating a part of a display device according to another embodiment of the present invention.
FIG. 35 is a plan view schematically illustrating a part of the display device of FIG. 34 .
36 is a perspective view schematically illustrating a part of a display device according to another embodiment of the present invention.
37 is a perspective view schematically illustrating a part of a display device according to another embodiment of the present invention.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and methods for achieving them will become clear with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components are assigned the same reference numerals, and overlapping descriptions thereof will be omitted. .

In the following embodiments, when various elements such as layers, films, regions, and plates are said to be “on” other elements, this is not only when they are “directly on” other elements, but also when other elements are interposed therebetween. Including cases where In addition, for convenience of description, the size of components may be exaggerated or reduced in the drawings. For example, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes of the Cartesian coordinate system, and may be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

FIG. 1 is a perspective view schematically illustrating a portion of a display device according to an exemplary embodiment, and FIG. 2 is a cross-sectional view schematically illustrating a portion of the display device of FIG. 1 . As shown in FIG. 1 , in the display device according to the present embodiment, a portion of the substrate 100 , which is a part of the display device, is bent, so that a portion of the display device has a bent shape similarly to the substrate 100 . However, for convenience of illustration, FIG. 2 shows the display device in an unbent state. For reference, cross-sectional views and plan views of the embodiments to be described below also show the display device in an unbent state for convenience of illustration.

As shown in FIGS. 1 and 2 , the substrate 100 included in the display device according to the present embodiment has a first bending area 1BA extending in a first direction (+y direction). The first bending area 1BA is located between the first area 1A and the second area 2A in the second direction (+x direction) crossing the first direction. As shown in FIG. 1 , the substrate 100 is bent about a first bending axis 1BAX extending in a first direction (+y direction). The substrate 100 may include various materials having flexible or bendable properties, such as polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate, PC) or a polymer resin such as cellulose acetate propionate (CAP).

The first area 1A includes the display area DA. Of course, as shown in FIG. 2 , the first area 1A includes a part of the non-display area outside the display area DA in addition to the display area DA. The second area 2A also includes a non-display area.

In the display area DA of the substrate 100, in addition to the display element 300, as shown in FIG. 2, a thin film transistor 210 to which the display element 300 is electrically connected may also be positioned. 2 illustrates that an organic light emitting device as the display device 300 is located in the display area DA. Electrically connecting the organic light emitting device to the thin film transistor 210 may be understood as electrically connecting the pixel electrode 310 to the thin film transistor 210 . Of course, a thin film transistor (not shown) may be disposed in a peripheral area outside the display area DA of the substrate 100 as needed. The thin film transistor located in the peripheral area may be, for example, a part of a circuit unit for controlling an electrical signal applied to the display area DA.

The thin film transistor 210 may include a semiconductor layer 211 including amorphous silicon, polycrystalline silicon, or an organic semiconductor material, a gate electrode 213, a source electrode 215a, and a drain electrode 215b. In order to secure insulation between the semiconductor layer 211 and the gate electrode 213, the gate insulating film 120 containing an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride is applied to the semiconductor layer 211 and the gate electrode 213. It may be interposed between the gate electrodes 213 . In addition, an interlayer insulating film 130 containing an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride may be disposed above the gate electrode 213, and the source electrode 215a and the drain electrode 215b may be disposed on such an interlayer insulating film 130 . As such, the insulating film containing an inorganic material may be formed through CVD or atomic layer deposition (ALD). This is also the case in the embodiments described later and modifications thereof.

A buffer layer 110 containing an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride may be interposed between the thin film transistor 210 having this structure and the substrate 100 . The buffer layer 110 may increase the smoothness of the upper surface of the substrate 100 or prevent or minimize the penetration of impurities from the substrate 100 into the semiconductor layer 211 of the thin film transistor 210. .

A planarization layer 140 may be disposed on the thin film transistor 210 . For example, as shown in FIG. 2 , when an organic light emitting element is disposed on the thin film transistor 210 , the planarization layer 140 may serve to substantially planarize an upper portion of the passivation layer covering the thin film transistor 210 . The planarization layer 140 may be formed of, for example, an organic material such as acrylic, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). In FIG. 2 , the planarization layer 140 is shown as a single layer, but various modifications such as multiple layers are possible. And, as shown in FIG. 2 , the flattening layer 140 has an opening outside the display area DA, so that a portion of the flattening layer 140 in the display area DA and the flattening layer 140 in the second area 2A ) may be physically separated. This is to prevent impurities or the like penetrating from the outside from reaching the inside of the display area DA through the inside of the planarization layer 140 .

In the display area DA of the substrate 100, on the planarization layer 140, an organic light emitting device having a pixel electrode 310, a counter electrode 330, and an intermediate layer 320 interposed therebetween and including a light emitting layer can be located. As shown in FIG. 2 , the pixel electrode 310 is electrically connected to the thin film transistor 210 by contacting either the source electrode 215a or the drain electrode 215b through an opening formed in the planarization layer 140 or the like. .

A pixel defining layer 150 may be disposed on the planarization layer 140 . The pixel-defining layer 150 serves to define a pixel by having an opening corresponding to each sub-pixel, that is, an opening through which at least the central portion of the pixel electrode 310 is exposed. 2, the pixel-defining layer 150 increases the distance between the edge of the pixel electrode 310 and the counter electrode 330 above the pixel electrode 310, thereby forming the pixel electrode 310. ) plays a role in preventing arcs from occurring at the edges. Such a pixel-defining layer 150 may be formed of, for example, an organic material such as polyimide or hexamethyldisiloxane (HMDSO).

The intermediate layer 320 of the organic light emitting device may include a low molecular weight or high molecular weight material. In the case of including a small molecule material, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL) : Electron Injection Layer) may have a single or complex laminated structure, copper phthalocyanine (CuPc), N,N-di(naphthalen-1-yl)-N,N'-diphenyl -Benzidine (N,N'-Di(naphthalene-1-yl)-N,N'-diphenyl-benzidine: NPB), tris-8-hydroxyquinoline aluminum (Alq3), etc. It may contain a variety of organic materials, including These layers may be formed by vacuum deposition.

When the intermediate layer 320 includes a polymer material, it may have a structure including a hole transport layer (HTL) and a light emitting layer (EML). In this case, the hole transport layer may include PEDOT, and the light emitting layer may include a polymer material such as PPV (Poly-Phenylenevinylene) or Polyfluorene. The intermediate layer 320 may be formed by screen printing, inkjet printing, laser induced thermal imaging (LITI), or the like.

Of course, the intermediate layer 320 is not necessarily limited thereto, and may have various structures. Also, the intermediate layer 320 may include a layer integral with the plurality of pixel electrodes 310 or may include a layer patterned to correspond to each of the plurality of pixel electrodes 310 .

The counter electrode 330 is disposed above the display area DA, and may be disposed to cover the display area DA as shown in FIG. 2 . That is, the counter electrode 330 may be integrally formed in the plurality of organic light emitting devices to correspond to the plurality of pixel electrodes 310 .

Since these organic light emitting devices can be easily damaged by moisture or oxygen from the outside, the encapsulation layer 400 can cover these organic light emitting devices to protect them. The encapsulation layer 400 may cover the display area DA and extend to the outside of the display area DA. As shown in FIG. 2 , the encapsulation layer 400 may include a first inorganic encapsulation layer 410 , an organic encapsulation layer 420 and a second inorganic encapsulation layer 430 .

The first inorganic encapsulation layer 410 covers the counter electrode 330 and may include silicon oxide, silicon nitride, and/or silicon oxynitride. Of course, other layers such as a capping layer may be interposed between the first inorganic encapsulation layer 410 and the counter electrode 330 as needed. Since the first inorganic encapsulation layer 410 is formed along the lower structure, the top surface thereof is not flat, as shown in FIG. 2 . The organic encapsulation layer 420 covers the first inorganic encapsulation layer 410, and unlike the first inorganic encapsulation layer 410, the upper surface thereof may be substantially flat. Specifically, the top surface of the organic encapsulation layer 420 may be substantially flat in a portion corresponding to the display area DA. The organic encapsulation layer 420 may include one or more materials selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane. there is. The second inorganic encapsulation layer 430 covers the organic encapsulation layer 420 and may include silicon oxide, silicon nitride, and/or silicon oxynitride. The second inorganic encapsulation layer 430 contacts the first inorganic encapsulation layer 410 at its magnetic field located outside the display area DA, thereby preventing the organic encapsulation layer 420 from being exposed to the outside.

As described above, the encapsulation layer 400 includes a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430, and cracks are formed in the encapsulation layer 400 through such a multilayer structure. Even if this occurs, such a crack may not be connected between the first inorganic encapsulation layer 410 and the organic encapsulation layer 420 or between the organic encapsulation layer 420 and the second inorganic encapsulation layer 430 . Through this, it is possible to prevent or minimize the formation of a path through which moisture or oxygen from the outside penetrates into the display area DA.

A polarizer 520 may be positioned on the encapsulation layer 400 by using a light-transmitting adhesive 510 (optically clear adhesive (OCA)). The polarizer 520 may serve to reduce external light reflection. For example, when external light passes through the polarizing plate 520 and is reflected on the upper surface of the counter electrode 330 and then passes through the polarizing plate 520 again, the phase of the external light can be changed as it passes through the polarizing plate 520 twice. As a result, by making the phase of the reflected light different from the phase of the external light entering the polarizer 520, destructive interference occurs, and as a result, visibility can be improved by reducing the reflection of the external light. The light-transmissive adhesive 510 and the polarizer 520 may cover the opening of the planarization layer 140 as shown in FIG. 2 . Of course, the display device according to the present embodiment does not always include the polarizing plate 520, and the polarizing plate 520 may be omitted or replaced with other components if necessary. For example, reflection of external light may be reduced by omitting the polarizer 520 and using a black matrix and a color filter.

Meanwhile, the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 including inorganic materials may be collectively referred to as a first inorganic insulating layer. As shown in FIG. 2 , the first inorganic insulating layer has a first opening corresponding to the first bending region 1BA. That is, each of the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 may have openings 110a, 120a, and 130a corresponding to the first bending region 1BA. That the first opening corresponds to the first bending area 1BA may be understood as overlapping the first opening with the first bending area 1BA. In this case, the area of the first opening may be larger than that of the first bending area 1BA. To this end, FIG. 2 shows that the width OW of the first opening is wider than that of the first bending area 1BA. Here, the area of the first opening may be defined as the area of the narrowest opening among the openings 110a, 120a, and 130a of the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130. In FIG. It is illustrated that the area of the first opening is defined by the area of the opening 110a of the buffer layer 110 .

For reference, although the inner surface of the opening 110a of the buffer layer 110 coincides with the inner surface of the opening 120a of the gate insulating layer 120 in FIG. 2 , the present invention is not limited thereto. For example, as shown in FIG. 3 , which is a schematic cross-sectional view of a portion of a display device according to another embodiment of the present invention, the area of the opening 110a of the buffer layer 110 is greater than the area of the opening 120a of the gate insulating layer 120 . ) may be larger. Even in this case, the area of the first opening may be defined as the area of the narrowest opening among the openings 110a, 120a, and 130a of the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130.

The display device according to the present embodiment includes the organic material layer 160 filling at least a part of the first opening of the first inorganic insulating layer. 2 shows that the organic material layer 160 fills all of the first openings. Further, the display device according to the present embodiment includes a first conductive layer 215c, which passes through the first region 1A to the first bending region 1BA to the second region 2A. ), and is located on the organic material layer 160. Of course, where the organic layer 160 does not exist, the first conductive layer 215c may be positioned on an inorganic insulating layer such as the interlayer insulating layer 130 . The first conductive layer 215c may be simultaneously formed of the same material as the source electrode 215a or the drain electrode 215b.

As described above, although the display device is shown in an unbent state for convenience in FIG. 2 , the display device according to the present embodiment actually bends the substrate 100 and the like in the first bending area 1BA as shown in FIG. 1 . is in a bent state. To this end, in the manufacturing process, as shown in FIG. 2 , the display device is manufactured in a state in which the substrate 100 is substantially flat, and then the substrate 100 is bent in the first bending area 1BA so that the display device is approximately shown in FIG. 1 . to have the same shape as shown in At this time, tensile stress may be applied to the first conductive layer 215c in the process of bending the substrate 100 in the first bending area 1BA, but in the case of the display device according to the present embodiment, the first The occurrence of defects in the conductive layer 215c may be prevented or minimized.

If the first inorganic insulating layer such as the buffer layer 110, the gate insulating film 120, and/or the interlayer insulating film 130 does not have an opening in the first bending region 1BA, the second region ( 2A), and if the first conductive layer 215c is located on such a first inorganic insulating layer, a large tensile force is applied to the first conductive layer 215c in the process of bending the substrate 100 or the like. stress is applied. In particular, since the hardness of the first inorganic insulating layer is higher than that of the organic material layer, the probability of occurrence of cracks in the first inorganic insulating layer is very high in the first bending region 1BA. A crack or the like is also generated in the first conductive layer 215c on the insulating layer, so that the probability of occurrence of defects such as disconnection of the first conductive layer 215c is very high.

However, in the case of the display device according to the present embodiment, as described above, the first inorganic insulating layer has the first opening in the first bending area 1BA, and the first bending area 1BA of the first conductive layer 215c The portion is located on the organic material layer 160 filling at least a part of the first opening of the first inorganic insulating layer. Since the first inorganic insulating layer has a first opening in the first bending region 1BA, the probability of occurrence of cracks in the first inorganic insulating layer is extremely low. less likely to occur Therefore, it is possible to prevent or minimize the occurrence of cracks in the portion of the first bending region 1BA of the first conductive layer 215c located on the organic material layer 160 . Of course, since the hardness of the organic material layer 160 is lower than that of the inorganic material layer, the tensile stress generated by bending of the substrate 100 is absorbed by the organic material layer 160 and the tensile stress is concentrated in the first conductive layer 215c. can be effectively minimized.

The display device according to this embodiment may include second conductive layers 213a and 213b in addition to the first conductive layer 215c. The second conductive layers 213a and 213b are disposed in the first area 1A or the second area 2A so as to be positioned on a different layer from the layer on which the first conductive layer 215c is located, and the first conductive layer 215c ) can be electrically connected to In FIG. 2 , the second conductive layers 213a and 213b are made of the same material as the gate electrode 213 of the thin film transistor 210 and are positioned on the same layer, that is, on the gate insulating layer 120 . Further, it is shown that the first conductive layer 215c contacts the second conductive layers 213a and 213b through contact holes formed in the interlayer insulating layer 130 . In addition, it is illustrated that the second conductive layer 213a is located in the first region 1A and the second conductive layer 213b is located in the second region 2A.

The second conductive layer 213a located in the first area 1A may be electrically connected to a thin film transistor or the like in the display area DA. Accordingly, the first conductive layer 215c may be connected to the second conductive layer 213a. Through this, it can be electrically connected to the thin film transistor in the display area DA. Of course, the second conductive layer 213b located in the second area 2A may also be electrically connected to the thin film transistor in the display area DA by the first conductive layer 215c. As such, the second conductive layers 213a and 213b may be positioned outside the display area DA and electrically connected to components positioned within the display area DA, or may be positioned outside the display area DA and be electrically connected to components located outside the display area DA ( DA), and at least a portion thereof may be positioned within the display area DA.

As described above, although the display device is shown in an unbent state for convenience in FIG. 2 , the display device according to the present embodiment actually bends the substrate 100 and the like in the first bending area 1BA as shown in FIG. 1 . is in a bent state. To this end, in the manufacturing process, as shown in FIG. 2 , the display device is manufactured in a state in which the substrate 100 is substantially flat, and then the substrate 100 is bent in the first bending area 1BA so that the display device is approximately shown in FIG. 1 . to have the same shape as shown in In this case, while the substrate 100 or the like is bent in the first bending area 1BA, tensile stress may be applied to components located in the first bending area 1BA.

Therefore, in the case of the first conductive layer 215c crossing the first bending area 1BA, since a material having a high elongation is included, cracks may occur in the first conductive layer 215c or the first conductive layer 215c may be disconnected. It is possible to prevent such defects from occurring. In addition, in the first region 1A or the second region 2A, the elongation rate is lower than that of the first conductive layer 215c, but the second conductive layer ( By forming 213a and 213b), the efficiency of electrical signal transmission in the display device can be increased or the rate of occurrence of defects in the manufacturing process can be reduced. For example, the second conductive layers 213a and 213b may include molybdenum, and the first conductive layer 215c may include aluminum. Of course, the first conductive layer 215c or the second conductive layers 213a and 213b may have a multilayer structure if necessary.

Of course, in the case of the second conductive layer 213b located in the second region 2A, unlike that shown in FIG. 2, at least a part of the upper portion thereof is exposed to the outside without being covered by the planarization layer 140 or the like, so that various electronic It may be electrically connected to a device or a printed circuit board.

Meanwhile, as shown in FIG. 2 , it may be considered that the organic material layer 160 covers the inner surface of the first opening of the first inorganic insulating layer. Specifically, the organic material layer 160 may cover an upper surface of an end portion of the first inorganic insulating layer in the direction of the first opening so that the organic material layer 160 may extend inside and outside the first opening of the first inorganic insulating layer. As described above, the first conductive layer 215c may be simultaneously formed of the same material as the source electrode 215a and the drain electrode 215b. To this end, a conductive layer is formed on the entire surface of the substrate 100. After that, the patterning may be performed to form the source electrode 215a, the drain electrode 215b, and the first conductive layer 215c. If the organic material layer 160 is the inner surface of the opening 110a of the buffer layer 110, the inner surface of the opening 120a of the gate insulating film 120, or the inner surface of the opening 130a of the interlayer insulating film 130, If not covered, the conductive material may be applied to the inner surface of the opening 110a of the buffer layer 110, the inner surface of the opening 120a of the gate insulating film 120, or the interlayer insulating film 130 in the process of patterning the conductive layer. It is not removed from the inner surface of the opening 130a and may remain in the corresponding portion. In that case, the remaining conductive material may cause a short circuit between the other conductive layers.

Therefore, when forming the organic material layer 160, the organic material layer 160 is formed in the direction of the first opening of the first inorganic insulating layer so that the organic material layer 160 reliably covers the inner surface of the first opening of the first inorganic insulating layer. It is preferable to cover the upper surface of the end so that the organic material layer 160 extends inside and outside the first opening of the first inorganic insulating layer. For reference, although the organic material layer 160 is shown to have a uniform thickness in FIG. 2, it has a different thickness depending on the position, so that the inner surface of the opening 110a of the buffer layer 110 or the opening of the gate insulating film 120 ( 120a) or in the vicinity of the inner surface of the opening 130a of the interlayer insulating film 130, the upper surface of the organic material layer 160 may have a gentle slope. Accordingly, in the process of patterning the conductive layer to form the source electrode 215a, the drain electrode 215b, and the first conductive layer 215c, it is possible to effectively prevent the conductive material from remaining without being removed. can

Meanwhile, as shown in FIG. 2 , the organic material layer 160 may have an uneven surface 160a on at least a part of the upper surface (in the +z direction). As the organic material layer 160 has the concavo-convex surface 160a, the first conductive layer 215c positioned on the organic material layer 160 has its upper and/or lower surface on the concavo-convex surface 160a of the organic material layer 160. may have a corresponding shape.

As described above, as the substrate 100 or the like is bent in the first bending area 1BA during the manufacturing process, tensile stress may be applied to the first conductive layer 215c, and the upper surface of the first conductive layer 215c And/or by having the lower surface have a shape corresponding to the uneven surface 160a of the organic material layer 160, the amount of tensile stress applied to the first conductive layer 215c may be minimized. That is, tensile stress that may occur during the bending process can be reduced through deformation of the shape of the organic material layer 160 having low strength. In this case, at least before bending, the shape of the first conductive layer 215c having a concave-convex shape is deformed by bending. By deforming the organic material layer 160 to correspond to the shape of the deformed organic material layer 160, it is possible to effectively prevent occurrence of defects such as disconnection in the first conductive layer 215c.

In addition, by forming the uneven surface 160a on at least a part of the upper surface (in the +z direction) of the organic material layer 160, the surface area of the upper surface of the organic material layer 160 and the first conductive layer 215c in the first opening It is possible to increase the surface area of the upper and lower surfaces. The fact that the surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c is large means that there is more room for the shape to be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. it means that

For reference, since the first conductive layer 215c is positioned on the organic layer 160, the lower surface of the first conductive layer 215c has a shape corresponding to the uneven surface 160a of the organic layer 160. However, the upper surface of the first conductive layer 215c may have a concave-convex surface, but may have an original concave-convex surface that does not correspond to the concave-convex surface 160a of the organic material layer 160 .

For example, after forming a conductive material layer on the organic material layer 160, photoresist is applied on the conductive material layer, and the exposure amount is varied depending on the portion of the photoresist using a slit mask or halftone mask, and then the photoresist is developed. The first conductive layer 215c may be formed by etching the exposed conductive material layer and then removing the photoresist. Since the exposure amount is changed according to the portion of the photoresist using a slit mask or a half-tone mask, the degree of etching of the conductive material layer is different depending on the portion. Therefore, it is possible to artificially form an uneven surface on the upper surface of the first conductive layer 215c through this method, and in this case, the upper surface of the first conductive layer 215c does not correspond to the uneven surface 160a of the organic layer 160. It may have a concavo-convex surface of a unique shape that does not exist. This is also the case in the embodiments described later and modifications thereof. Of course, even through the process of artificially forming the concave-convex surface on the upper surface of the first conductive layer 215c, the concave-convex surface may correspond to the concave-convex surface 160a of the organic layer 160.

The concavo-convex surface 160a on the upper surface (in the +z direction) of the organic layer 160 may be formed through various methods. For example, when forming the organic layer 160, a photoresist material is used, and in the manufacturing process, a slit mask or a half-tone mask is used to vary the exposure amount in various parts of the organic layer 160 whose upper surface is still substantially flat. , certain parts can be etched (removed) relatively more than other parts. Here, the more etched portion may be understood as a concave portion on the upper surface of the organic layer 160 . Of course, the method used when manufacturing the display device according to the present embodiment is not limited to this method. For example, various methods may be used, such as forming the organic material layer 160 having a substantially flat top surface and then removing only a specific portion by dry etching or the like.

In order for the organic material layer 160 to have the uneven surface 160a on its upper surface (+z direction), the organic material layer 160 has a plurality of grooves extending in the first direction (+y direction) on its upper surface (+z direction). can At this time, the shape of the top surface of the first conductive layer 215c on the organic material layer 160 corresponds to the shape of the top surface of the organic material layer 160 .

The organic material layer 160 may have the uneven surface 160a only within the first opening of the first inorganic insulating layer. In FIG. 2 , the width UEW of the organic material layer 160 where the uneven surface 160a is formed is smaller than the width OW of the first opening of the first inorganic insulating layer. If the organic material layer 160 has a concavo-convex surface 160a covering the inside and outside of the first opening of the first inorganic insulating layer, the inner surface of the opening 110a of the buffer layer 110 or the opening 120a of the gate insulating layer 120 ) or near the inner surface of the opening 130a of the interlayer insulating film 130, the organic material layer 160 also has a concavo-convex surface 160a.

In this case, as shown in FIG. 4 showing a portion of the display device according to the comparative example, the thickness of the organic material layer 160 in the concave portion of the uneven surface 160a is greater than that of the organic material layer 160 in the protruding portion. Since it is relatively thin, the concave portion is the inner surface of the opening 110a of the buffer layer 110, the inner surface of the opening 120a of the gate insulating film 120, or the inner surface of the opening 130a of the interlayer insulating film 130 When positioned nearby, the organic material layer 160 may not be continuously connected and may be disconnected. Therefore, by allowing the organic layer 160 to have the uneven surface 160a only within the first opening of the first inorganic insulating layer, the inner surface of the opening 110a of the buffer layer 110 or the opening 120a of the gate insulating layer 120 It is possible to prevent the organic material layer 160 from being cut off near the inner surface of the inner surface or the inner surface of the opening 130a of the interlayer insulating film 130 .

Of course, as described above, in order to prevent disconnection of the first conductive layer 215c from occurring in the first bending area 1BA, the organic layer 160 has a concavo-convex surface 160a in the first bending area 1BA. It is desirable to do Therefore, as a result, the area of the organic layer 160 having the concave-convex surface 160a may be larger than that of the first bending region 1BA but smaller than that of the first opening. 2 , it is shown that the width UEW of the portion having the uneven surface 160a of the organic layer 160 is larger than the width of the first bending region 1BA and narrower than the width OW of the first opening.

Meanwhile, as shown in FIG. 5 showing a portion of a display device according to another embodiment of the present invention, the organic material layer 160 has a concave-convex surface 160a over the inside and outside of the first opening of the first inorganic insulating layer. However, the protruding portion of the organic material layer 160 is the inner surface of the opening 110a of the buffer layer 110, the inner surface of the opening 120a of the gate insulating film 120, or the opening 130a of the interlayer insulating film 130. It is also possible to position it near the inner surface of. In this case, since the thickness of the organic material layer 160 in the protruding part of the organic material layer 160 is relatively thicker than that of the organic material layer 160 in the concave part, the inner surface of the opening 110a of the buffer layer 110 or the gate insulating film It is possible to prevent the organic layer 160 from being cut near the inner surface of the opening 120a of (120) or the inner surface of the opening 130a of the interlayer insulating film 130.

Meanwhile, a stress neutralization layer (SNL) 600 may be positioned outside the display area DA. That is, the stress neutralization layer 600 may be positioned on the first conductive layer 215c corresponding to at least the first bending area 1BA.

When bending a laminate, a stress neutral plane exists within the laminate. If the stress neutralization layer 600 does not exist, excessive tensile stress or the like may be applied to the first conductive layer 215c within the first bending region 1BA according to bending of the substrate 100 or the like. This is because the location of the first conductive layer 215c may not correspond to the stress neutral plane. However, by allowing the stress neutralization layer 600 to exist and adjusting its thickness, modulus, etc., the laminate including the substrate 100, the first conductive layer 215c, and the stress neutralization layer 600 is stress neutral. The position of the plane can be adjusted. Therefore, the tensile stress applied to the first conductive layer 215c can be minimized by positioning the stress neutral plane near the first conductive layer 215c through the stress neutralization layer 600 .

Unlike the stress neutralization layer 600 shown in FIG. 2 , the stress neutralization layer 600 may extend to the edge of the substrate 100 of the display device. For example, in the second region 2A, at least a part of the first conductive layer 215c, the second conductive layer 215b, and/or other conductive layers electrically connected thereto form the interlayer insulating film 130 or the planarization layer ( 140), etc., and can be electrically connected to various electronic devices or printed circuit boards. Accordingly, there exists a portion where the first conductive layer 215c, the second conductive layer 215b, and/or other conductive layers electrically connected thereto are electrically connected to various electronic devices or printed circuit boards. At this time, since it is necessary to protect the electrically connected portion from impurities such as external moisture, the stress neutralization layer 600 covers the electrically connected portion, so that the stress neutralization layer 600 is the protective layer. It can even play a role. To this end, the stress neutralization layer 600 may extend to the edge of the substrate 100 of the display device, for example.

Meanwhile, although FIG. 2 shows that the top surface of the stress neutralization layer 600 in the display area DA direction (−x direction) coincides with the top surface of the polarizer 520 (+z direction), the present invention is limited thereto. It is not. For example, an end of the stress neutralization layer 600 in the display area DA direction (−x direction) may cover a part of the upper surface of the edge of the polarizer 520 . Alternatively, the end of the stress neutralization layer 600 in the display area DA direction (-x direction) may not contact the polarizer 520 and/or the translucent adhesive 510. In particular, in the latter case, during or after forming the stress neutralization layer 600, the gas generated in the stress neutralization layer 600 moves in the display area DA direction (-x direction) and Deterioration of the same display element 300 can be prevented.

As shown in FIG. 2 , if the top surface of the stress neutralization layer 600 in the display area DA direction (−x direction) coincides with the top surface of the polarizer 520 (+z direction), or the stress neutralization layer 600 The end of the display area (DA) direction (-x direction) covers a part of the upper surface of the edge of the polarizer 520, or the end of the stress neutralization layer 600 in the display area (DA) direction (-x direction) is the light-transmitting adhesive 510 ), the thickness of the portion of the stress neutralization layer 600 in the display area DA direction (-x direction) may be thicker than that of other portions of the stress neutralization layer 600. When forming the stress neutralization layer 600, a material in the form of a liquid or paste may be applied and cured. During the curing process, the volume of the stress neutralization layer 600 may be reduced. At this time, when the portion of the stress neutralization layer 600 in the display area DA direction (-x direction) is in contact with the polarizer 520 and/or the light-transmissive adhesive 510, the position of the corresponding portion of the stress neutralization layer 600 Since is fixed, a volume reduction occurs in the remaining portion of the stress neutralization layer 600 . As a result, the thickness of the portion of the stress neutralization layer 600 in the display area DA direction (-x direction) may be thicker than that of other portions of the stress neutralization layer 600 .

FIG. 6 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, the vicinity of a first opening of a first inorganic insulating layer. In the case of the display device according to the present embodiment, the concavo-convex surface 160a of the organic material layer 160 forms a plurality of protrusions in the second direction (+x direction) crossing the first direction (+y direction), as described above. have At this time, the distance d1 between the plurality of protrusions in the central portion of the first opening is shorter than the distance d2 between the plurality of protrusions in other portions of the first opening.

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent in the first bending area 1BA. At this time, the center of the first bending area 1BA, that is, the center of the first opening. At this point, the greatest tensile stress may be applied to the first conductive layer 215c. Therefore, by making the distance d1 between the plurality of protrusions at the central portion of the first opening shorter than the distance d2 between the plurality of protrusions at other portions within the first opening, The surface area of the upper surface of the organic material layer 160 and the surface area of the upper and lower surfaces of the first conductive layer 215c in the central portion of the first opening may be relatively larger than those of other portions within the first opening. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more In this case, a point where the distance between the plurality of protrusions changes from the distance d1 to the distance d2 may be located within the first bending area 1BA.

Of course, the distance between the plurality of protrusions may be different from the distance d1 or d2 in a portion other than the central portion of the first opening or a portion adjacent to an edge within the first opening. Furthermore, the distance between the plurality of protrusions may gradually increase from the center of the first opening to the edge of the first opening. This is also the case in the embodiments described later and modifications thereof.

7 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, a portion of a first inorganic insulating layer in the vicinity of a first opening. In the case of the display device according to the present embodiment, the concavo-convex surface 160a of the organic material layer 160 forms a plurality of protrusions in the second direction (+x direction) crossing the first direction (+y direction), as described above. have At this time, the height (h1) from the upper surface of the substrate 100 in the central portion of the first opening to the plurality of protrusions is the height (h1) from the top surface of the substrate 100 to the plurality of protrusions in the other portion of the first opening ( h2) higher.

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent in the first bending area 1BA. At this time, the center of the first bending area 1BA, that is, the center of the first opening. At this point, the greatest tensile stress may be applied to the first conductive layer 215c. Therefore, the height h1 from the upper surface of the substrate 100 to the plurality of protrusions in the central part of the first opening is the height h2 from the upper surface of the substrate 100 to the plurality of protrusions in the other part of the first opening. ), so that the surface area of the upper surface of the organic material layer 160 in the central part of the first opening and the surface area of the upper and lower surfaces of the first conductive layer 215c in the central part of the first opening are different from the other parts in the first opening. It can be made relatively wider. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more In this case, a point where the height from the upper surface of the substrate 100 to the plurality of protrusions changes from height h1 to height h2 may be located within the first bending area 1BA.

Of course, the height from the upper surface of the substrate 100 to the plurality of protrusions may be different from the height h1 or the height h2 in a portion other than the central portion of the first opening or the portion adjacent to the edge within the first opening. there is. Furthermore, the height of the plurality of protrusions from the upper surface of the substrate 100 may gradually decrease from the center of the first opening to the edge of the first opening. This is also the case in the embodiments described later and modifications thereof.

As shown in FIG. 8 schematically showing a portion of a display device according to another embodiment of the present invention, both FIGS. 6 and 7 may be applied.

For example, the distance d1 between the plurality of protrusions at the central portion of the first opening is shorter than the distance d2 between the plurality of protrusions at other portions within the first opening, and also at the central portion of the first opening. The height h1 from the upper surface of the substrate 100 to the plurality of protrusions may be higher than the height h2 from the upper surface of the substrate 100 to the plurality of protrusions in other parts within the first opening. . Through this, the surface area of the upper surface of the organic material layer 160 in the central part of the first opening and the surface area of the upper and lower surfaces of the first conductive layer 215c in the central part of the first opening are relatively larger than those in other parts of the first opening. You can maximize what you let go. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more Even in this case, a change in the height of the plurality of protrusions or a distance between the plurality of protrusions may gradually change. In this case, a point where the distance between the plurality of protrusions changes from the distance d1 to the distance d2 may be located within the first bending area 1BA.

9 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, a portion near a first opening of a first inorganic insulating layer. In the case of the display device according to the present embodiment, the concavo-convex surface 160a of the organic material layer 160 forms a plurality of protrusions in the second direction (+x direction) crossing the first direction (+y direction), as described above. have At this time, a distance d2 between the plurality of protrusions at a portion adjacent to the inner surface of the first opening is shorter than a distance d1 between the plurality of protrusions at another portion within the first opening.

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic layer 160, and the first conductive layer 215c are bent in the first bending area 1BA, and in this process, tensile stress is applied to the organic layer 160 and the first conductive layer 215c. will be inflicted In particular, since the buffer layer 110, the gate insulating layer 120, and/or the interlayer insulating layer 130, which can be referred to as the first inorganic insulating layer containing inorganic materials, have a first opening, they exist within the first bending region 1BA. However, since the portion of the organic material layer 160 adjacent to the inner surface of the first opening is in contact with or adjacent to the first inorganic insulating layer, it is affected by the first inorganic insulating layer having high hardness. , and thus can be easily damaged by tensile stress.

Therefore, by making the distance d2 between the plurality of protrusions at a portion adjacent to the inner surface of the first opening shorter than the distance d1 between the plurality of protrusions at another portion within the first opening, The surface area of the upper surface of the organic material layer 160 at a portion adjacent to the side surface and the surface area of the upper and lower surfaces of the first conductive layer 215c at a portion adjacent to the inner surface of the first opening are relatively larger than those at other portions within the first opening. can do. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more In this case, a point where the distance between the plurality of protrusions changes from the distance d1 to the distance d2 may be located within the first bending area 1BA.

Of course, the distance between the plurality of protrusions may be different from the distance d1 or d2 in a portion other than the central portion of the first opening or a portion adjacent to an edge within the first opening. Furthermore, the distance between the plurality of protrusions may gradually decrease from the center of the first opening to the edge of the first opening.

A display device according to another embodiment of the present invention may have a structure to which both FIGS. 6 and 9 are applied. For example, the distance between the plurality of protrusions in the central portion of the first opening and the distance between the plurality of protrusions in the portion adjacent to the inner side surface of the first opening are different from the plurality of protrusions in the other portion of the first opening. It can be made shorter than the distance d2 between them.

FIG. 10 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, the vicinity of a first opening of a first inorganic insulating layer. In the case of the display device according to the present embodiment, the concavo-convex surface 160a of the organic material layer 160 forms a plurality of protrusions in the second direction (+x direction) crossing the first direction (+y direction), as described above. have At this time, the height h2 from the upper surface of the substrate 100 at a portion adjacent to the inner surface of the first opening to the plurality of protrusions extends from the upper surface of the substrate 100 to the plurality of protrusions at another portion within the first opening. is higher than the height (h1) of

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic layer 160, and the first conductive layer 215c are bent in the first bending area 1BA, and in this process, tensile stress is applied to the organic layer 160 and the first conductive layer 215c. will be inflicted In particular, since the buffer layer 110, the gate insulating layer 120, and/or the interlayer insulating layer 130, which can be referred to as the first inorganic insulating layer containing inorganic materials, have a first opening, they exist within the first bending region 1BA. However, since the portion of the organic material layer 160 adjacent to the inner surface of the first opening is in contact with or adjacent to the first inorganic insulating layer, it is affected by the first inorganic insulating layer having high hardness. , and thus can be easily damaged by tensile stress.

Therefore, the height h2 from the upper surface of the substrate 100 to the plurality of protrusions at a portion adjacent to the inner surface of the first opening is equal to the height h2 from the top surface of the substrate 100 to the plurality of protrusions at another portion within the first opening. By making the height h1 higher than the surface area of the upper surface of the organic material layer 160 adjacent to the inner surface of the first opening and the upper and lower surfaces of the first conductive layer 215c adjacent to the inner surface of the first opening The surface area may be relatively larger than that of other portions within the first opening. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more In this case, a point where the height from the upper surface of the substrate 100 to the plurality of protrusions changes from height h1 to height h2 may be located within the first bending area 1BA.

Of course, the height from the upper surface of the substrate 100 to the plurality of protrusions may be different from the height h1 or the height h2 in a portion other than the central portion of the first opening or the portion adjacent to the edge within the first opening. there is. Furthermore, the height of the plurality of protrusions from the upper surface of the substrate 100 may gradually increase from the center of the first opening to the edge of the first opening. This is also the case in the embodiments described later and modifications thereof.

A display device according to another embodiment of the present invention may have a structure to which both FIGS. 7 and 10 are applied. For example, the height from the upper surface of the substrate 100 at the center of the first opening to the plurality of protrusions and the height from the upper surface of the substrate 100 to the plurality of protrusions at the portion adjacent to the inner surface of the first opening. , may be higher than the height from the upper surface of the substrate 100 to the plurality of protrusions in other parts of the first opening.

Meanwhile, as shown in FIG. 11 schematically showing a part of a display device according to another embodiment of the present invention, both FIGS. 9 and 10 may be applied. For example, the distance d2 between the plurality of protrusions at a portion adjacent to the inner surface of the first opening is shorter than the distance d1 between the plurality of protrusions at another portion within the first opening, and The height h2 from the top surface of the substrate 100 to the plurality of protrusions at a portion adjacent to the side surface is greater than the height h1 from the top surface of the substrate 100 to the plurality of protrusions at another portion within the first opening. can be made high Through this, the surface area of the upper surface of the organic material layer 160 at the portion adjacent to the inner surface of the first opening and the surface area of the upper and lower surfaces of the first conductive layer 215c at the portion adjacent to the inner surface of the first opening are different from each other within the first opening. It is possible to maximize the relatively wider than in the part. For reference, the large surface area of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c means that the shape can be deformed in order to reduce tensile stress caused by bending of the substrate 100 or the like. means that there will be more Even in this case, a change in the height of the plurality of protrusions or a distance between the plurality of protrusions may gradually change.

12 is a schematic cross-sectional view of a portion of a display device according to another exemplary embodiment of the present invention. As shown in FIG. 12 , in the display device according to the present embodiment, the stress neutralization layer 600 has an uneven surface 600a on at least a part of the upper surface. The concave-convex surface 600a may correspond to at least the first bending area 1BA, and may have a larger area than the area of the first bending area 1BA. In this case, the concave-convex surface 600a of the stress neutralization layer 600 may have a shape corresponding to the concave-convex surface 160a of the organic layer 160 .

As described above, the stress neutralization layer 600 can adjust the position of the stress neutral plane in the laminate including the substrate 100, the first conductive layer 215c, the stress neutralization layer 600, and the like. . Therefore, the tensile stress applied to the first conductive layer 215c can be minimized by positioning the stress neutral plane near the first conductive layer 215c through the stress neutralization layer 600 . 12, the concavo-convex surface 600a of the stress neutralization layer 600 has a shape corresponding to the concavo-convex surface 160a of the organic material layer 160, similarly to the concavo-convex surface 160a of the organic material layer 160. ), the stress neutral plane may be precisely located in the first conductive layer 215c having a shape corresponding to . Through this, the tensile stress applied to the first conductive layer 215c is minimized while the substrate 100 is bent in the first bending area 1BA, thereby preventing defects from occurring in the first conductive layer 215c. or can be minimized.

Meanwhile, the gate insulating layer 120 may be referred to as a first inorganic insulating layer, and the first inorganic insulating layer may have a first opening 120a or a first groove. Reference numeral 213b denotes a first conductive layer disposed on the first inorganic insulating layer, and the interlayer insulating film 130 is referred to as a second inorganic insulating layer disposed on the first conductive layer 213b. It can be said that it has a contact hole exposing a part of the first conductive layer 213b and also has a second opening 130a or a second groove. In this case, as shown in FIG. 12 , the width of the second opening 130a or the second groove may be wider than that of the first opening 120a or the first groove.

In addition, the buffer layer 110 is referred to as a third inorganic insulating layer, and it can be said that the third inorganic insulating layer is located under the semiconductor layer 211 . As shown in FIG. 12 , the third inorganic insulating layer 110 may have a third opening 110a exposing a portion of the substrate 100 . Although FIG. 12 shows that the inner surface of the third opening 110a does not match the inner surface of the first opening 120a to form a stair shape, as shown in FIG. 2 as necessary, the third opening 110a ) may coincide with the inner surface of the first opening 120a. The shape of the third opening 110a may be the same as that of the first opening 120a or the first groove. The first organic material layer 160 directly contacts the second conductive layer 215c and may also directly contact a portion of the substrate 100 exposed through the third opening 110a.

Reference numeral 160 can be said to fill the first opening 120a or first groove and the second opening 130a or second groove as the first organic material layer. Reference numeral 215c is referred to as a second conductive layer positioned on the first organic material layer 160, and the second conductive layer 215c directly contacting the first organic material layer 160 is the first opening 120a or the first groove. and extending above the second opening 130a or the second groove and electrically connected to the first conductive layer 213b through the contact hole. The planarization layer 140 may be referred to as a second organic material layer disposed on the second conductive layer 215c, and the stress neutralization layer 600 may be referred to as a third organic material layer disposed on the second organic material layer 140. The third organic material layer 600 may be disposed on the second organic material layer 140 above the first opening 120a or the first groove.

Since the first inorganic insulating layer is the gate insulating layer 120 , it may be disposed between the gate electrode 213 of the thin film transistor 210 and the substrate 100 . Since the second inorganic insulating layer is the interlayer insulating layer 130 , it may be disposed on the gate electrode 213 . The encapsulation layer 400 may include a first inorganic encapsulation layer 410 and an organic encapsulation layer 420, and may be positioned on the thin film transistor 210 and the like to cover the thin film transistor 210 and the like. A touch electrode 710 as described below with reference to FIG. 24 may be positioned on the encapsulation layer 400 .

The stress neutralization layer 600 having such a shape includes an organic material, and may be formed through various methods.

For example, as shown in FIG. 13, the first convex part, which is one of the convex parts of the concave-convex surface 160a of the organic material layer 160, has a shape extending in the y-axis direction along the edge of the substrate 100 to correspond to the first convex part. One portion 601 is formed by inkjet printing, jetting, or dotting, and the first portion 601 is cured by irradiation with UV. And, as shown in FIG. 14, among the convex portions of the uneven surface 160a of the organic material layer 160, the second convex portion adjacent to the first convex portion extends in the y-axis direction along the edge of the substrate 100 to correspond to the second convex portion adjacent to the first convex portion. A second portion 602 having a shape may be formed, and UV may be irradiated to the second portion 602 to cure the second portion 602 . At this time, adjacent portions of the first portion 601 and the second portion 602 are concave, and the central portion of the first portion 601 and the central portion of the second portion 602 each have a convex shape. This is because when the first part 601 and the second part 602 are formed, the first part 601 and the second part 601 and the second part are formed due to the characteristics of the first part 601 and the second part 602 including organic materials. (602) This is because each central portion has a convex shape. By repeating this process, as shown in FIG. 15 , the uneven surface 600a of the stress neutralization layer 600 may have a shape corresponding to the uneven surface 160a of the organic layer 160 . Of course, unlike shown in FIG. 15, a boundary may not exist between the first part or the second part. This is because they are formed from the same organic material.

Alternatively, an organic material for forming the stress neutralization layer 600 is placed on the first conductive layer 215c to correspond to at least the first bending region 1BA, and as shown in FIG. 16, the uneven surface of the organic material layer 160 A mold M having a lower surface having a shape corresponding to 160a may be brought into contact with an organic material for forming the stress neutralization layer 600 . In this state, the organic material for forming the stress neutralization layer 600 is cured by UV irradiation and the mold M is removed, so that the uneven surface 600a of the stress neutralization layer 600 is formed by the uneven surface 160a of the organic material layer 160. ) can be made to have a shape corresponding to Of course, if necessary, the organic material for forming the stress neutralization layer 600 is first cured by UV irradiation before bringing the mold M into contact with the organic material for forming the stress neutralization layer 600, and then the lower surface of the mold M After contacting the organic material for forming the stress neutralization layer 600, the organic material for forming the stress neutralization layer 600 is irradiated with UV again to cause secondary curing, and then the mold M may be removed.

For reference, FIGS. 13 to 16 as well as FIG. 12 are diagrams schematically illustrating the display device according to the present embodiment, and it may be understood that the thickness of each component is exaggerated or simplified for convenience of illustration. This is also the case in the embodiments described later and modifications thereof.

Although the concavo-convex surface 600a of the stress neutralization layer 600 may correspond exactly to the concavo-convex surface 160a of the organic material layer 160 as shown in FIG. As shown in FIG. 17 , which is a cross-sectional view of , the concavo-convex surface 600a of the stress neutralization layer 600 may roughly correspond to the concavo-convex surface 160a of the organic layer 160 .

For example, as shown in FIG. 17 , the period of protruding portions of the concave-convex surface 600a of the stress neutralization layer 600 may be an integer multiple of, for example, twice the period of the protruding portions of the concave-convex surface 160a of the organic layer 160 . Even in this case, all protrusions of the concave-convex surface 600a of the stress neutralization layer 600 correspond to at least some of the protrusions of the concave-convex surface 160a of the organic material layer 160, so that the substrate 100, etc. The occurrence of defects in the first conductive layer 215c may be prevented or minimized by minimizing the tensile stress applied to the first conductive layer 215c during the bending process in (1BA). Of course, contrary to this, the period of protruding portions of the concave-convex surface 160a of the organic layer 160 may be an integer multiple of the period of the protruding portions of the concave-convex surface 600a of the stress neutralization layer 600 . In this case, all protrusions of the concave-convex surface 160a of the organic layer 160 correspond to at least some of the protrusions of the concavo-convex surface 600a of the stress neutralization layer 600, so that the substrate 100 and the like are formed in the first bending region ( 1BA), it is possible to prevent or minimize the occurrence of defects in the first conductive layer 215c by minimizing the tensile stress applied to the first conductive layer 215c during bending.

Meanwhile, as shown in FIG. 12, the upper surface of the planarization layer 140 may be in a flat state, and is similar to that shown in FIG. Likewise, the upper surface of the planarization layer 140 may also have a concavo-convex surface 140a. A method of forming the concave-convex surface 140a on the top surface of the planarization layer 140 may be the same as/similar to the method of forming the concave-convex surface 160a on the top surface of the organic layer 160 .

As described above, the configuration of the stress neutralization layer 600 described with reference to FIGS. 12 to 18 may be applied to display devices according to the above-described embodiments and embodiments to be described later.

So far, only the first inorganic insulating layer having an opening has been described, but the present invention is not limited thereto. For example, the first inorganic insulating layer may have a first groove at a position corresponding to the first bending area 1BA, instead of having a first opening completely penetrating vertically at a position corresponding to the first bending area 1BA. there is. 19 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention, showing such a case.

As shown in FIG. 19 , for example, the buffer layer 110 may be continuous throughout the first region 1A, the first bending region 1BA, and the second region 2A. The gate insulating layer 120 may have an opening 120a corresponding to the first bending region 1BA, and the interlayer insulating layer 130 may also have an opening 130a corresponding to the first bending region 1BA. Accordingly, it may be understood that the first inorganic insulating layer including the buffer layer 110 , the gate insulating film 120 and the interlayer insulating film 130 has a first groove corresponding to the first bending region 1BA. Of course, the first inorganic insulating layer may include the first groove in various shapes different from the above. For example, a portion of the upper surface (+z direction) of the buffer layer 110 may also be removed, and a lower surface (−z direction) of the gate insulating film 120 may remain without being removed, and various modifications are possible.

That the first groove corresponds to the first bending area 1BA may be understood as overlapping the first groove with the first bending area 1BA. In this case, the area of the first groove may be larger than that of the first bending area 1BA. To this end, FIG. 19 shows that the width GW of the first groove is wider than that of the first bending area 1BA. Here, the area of the first groove may be defined as the area of the narrowest opening among the openings 120a and 130a of the gate insulating film 120 and the interlayer insulating film 130, and in FIG. 20, the opening of the gate insulating film 120 It is illustrated that the area of the first groove is defined by the area of (120a).

In the display device according to this embodiment, the organic material layer 160 may fill at least a part of the first groove. Also, the first conductive layer 215c is positioned on the organic material layer 160 in a region where the organic material layer 160 exists.

Although FIG. 19 shows the display device in an unbent state for convenience, the display device according to the present embodiment is actually in a state in which the substrate 100 and the like are bent in the first bending area 1BA as shown in FIG. 1 . am. To this end, in the manufacturing process, as shown in FIG. 19, the display device is manufactured in a state in which the substrate 100 is substantially flat, and then the substrate 100 and the like are bent in the first bending area 1BA so that the display device is approximately shown in FIG. to have the same shape as shown in At this time, tensile stress may be applied to the first conductive layer 215c in the process of bending the substrate 100 or the like in the first bending area 1BA, but in the case of the display device according to the present embodiment, the first inorganic insulating layer The organic material layer 160 has a first groove in the first bending region 1BA, and a portion of the first bending region 1BA of the first conductive layer 215c fills at least a part of the first groove of the first inorganic insulating layer. located on top Therefore, it is possible to prevent or minimize the occurrence of cracks in the portion of the first bending region 1BA of the first conductive layer 215c located on the organic material layer 160 .

Meanwhile, what has been described above regarding the case where the first inorganic insulating layer has the first opening may be applied to all cases where the first inorganic insulating layer has the first groove. For example, the organic material layer 160 may cover the inner surface of the first groove. Also, the organic material layer 160 may have the uneven surface 160a on at least a part of the upper surface only in the first groove. Also, although the area of the portion having the uneven surface 160a of the organic layer 160 is larger than the area of the first bending area 1BA, it may be smaller than the area of the first groove, as shown in FIGS. 6 to 10. The description of the pitch or height of the plurality of protrusions on the uneven surface 160a of the organic layer 160 as described above with reference can also be applied to the case where the first inorganic insulating layer has the first groove. In addition, for convenience, only the case where the first inorganic insulating layer has the first opening will be described below, but it goes without saying that the following description can also be applied to the case where the first inorganic insulating layer has the first groove.

20 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention. In the case of the display device according to the present embodiment, the organic material layer 160 has a plurality of islands 160b. The plurality of islands 160b extend in a first direction (+y direction) and are spaced apart from each other in a second direction (+x direction). The first conductive layer 215c covers the plurality of islands 160b, and accordingly, the shape of the upper surface of the first conductive layer 215c on the plurality of islands 160b changes to that of the plurality of islands 160b. Corresponding to the shape of the upper surface, the surface area of the upper surface (+z direction) of the first conductive layer 215c is increased.

During the manufacturing process, as the substrate 100 is bent in the first bending area 1BA, tensile stress may be applied to the first conductive layer 215c, and thus the upper and/or lower surfaces of the first conductive layer 215c. By having the organic material layer 160 have a shape corresponding to the plurality of islands 160b, the amount of tensile stress applied to the first conductive layer 215c can be minimized. That is, tensile stress that may occur during the bending process can be reduced through deformation of the shape of the plurality of islands 160b of the organic material layer 160 having low strength. In this case, the first conductive layer 215c having a concavo-convex shape at least before bending ) is deformed to correspond to the shape of the organic material layer 160 deformed by bending, it is possible to effectively prevent defects such as disconnection in the first conductive layer 215c.

For reference, since the first conductive layer 215c is positioned on the organic layer 160, the lower surface of the first conductive layer 215c has a shape corresponding to the plurality of islands 160b of the organic layer 160. However, the top surface of the first conductive layer 215c may have a concave-convex surface, but may have an original concave-convex surface that does not correspond to the plurality of islands 160b of the organic material layer 160 .

For example, after forming a conductive material layer on the organic material layer 160, photoresist is applied on the conductive material layer, and the exposure amount is varied depending on the portion of the photoresist using a slit mask or halftone mask, and then the photoresist is developed. The first conductive layer 215c may be formed by etching the exposed conductive material layer and then removing the photoresist. Since the exposure amount is changed according to the portion of the photoresist using a slit mask or a half-tone mask, the degree of etching of the conductive material layer is different depending on the portion. Therefore, through this method, an uneven surface can be artificially formed on the upper surface of the first conductive layer 215c. In this case, the upper surface of the first conductive layer 215c is formed on the plurality of islands 160b of the organic layer 160. It may have a concavo-convex surface of an original shape that does not correspond. This is also the case in the embodiments described later and modifications thereof. Of course, even if the upper surface of the first conductive layer 215c is artificially formed with a concave-convex surface, the concave-convex surface may correspond to the plurality of islands 160b of the organic layer 160.

21 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, the vicinity of a first opening of a first inorganic insulating layer. In the case of the display device according to the present embodiment, the plurality of islands 160b of the organic layer 160 are spaced apart from each other in the second direction (+x direction), as described above. In this case, the distance d1 between the plurality of islands 160b in the central part of the first opening is shorter than the distance d2 between the plurality of islands 160b in other parts of the first opening.

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent in the first bending area 1BA. At this time, the center of the first bending area 1BA, that is, the center of the first opening. At this point, the greatest tensile stress may be applied to the first conductive layer 215c. Therefore, by making the distance d1 between the plurality of islands 160b in the central part of the first opening shorter than the distance d2 between the plurality of islands 160b in other parts of the first opening, the first opening The surface area of the plurality of islands 160b in the central portion of the opening and the surface area of the upper and lower surfaces of the first conductive layer 215c in the central portion of the first opening may be relatively larger than those in other portions of the first opening. there is. For reference, the fact that the surface areas of the plurality of islands 160b and the upper and lower surfaces of the first conductive layer 215c are large means that the shape can be deformed to reduce tensile stress caused by bending of the substrate 100 or the like. means that there is a lot of leeway.

22 is a cross-sectional view schematically illustrating a portion of a display device according to another embodiment of the present invention, specifically, a portion near a first opening of a first inorganic insulating layer. In the case of the display device according to the present embodiment, the height h1 from the upper surface of the substrate 100 in the central portion of the first opening to the plurality of islands 160b is equal to the height h1 of the substrate 100 in the other portion of the first opening. ) is higher than the height h2 from the upper surface to the plurality of islands 160b.

As described above with reference to FIG. 1 , the substrate 100 of the display device according to the present exemplary embodiment is bent about a first bending axis 1BAX extending in a first direction (+y direction). Accordingly, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent in the first bending area 1BA. At this time, the center of the first bending area 1BA, that is, the center of the first opening. At this point, the greatest tensile stress may be applied to the first conductive layer 215c. Accordingly, the height h1 from the upper surface of the substrate 100 to the plurality of islands 160b at the central portion of the first opening is equal to the height h1 of the plurality of islands 160b from the upper surface of the substrate 100 at another portion of the first opening. ), the surface area of the plurality of islands 160b at the center of the first opening and the surface area of the upper and lower surfaces of the first conductive layer 215c at the center of the first opening It may be made relatively wider than other parts within the first opening.

Meanwhile, as shown in FIG. 23, which is a schematic cross-sectional view of a part of a display device according to another embodiment of the present invention, a protective film 170 protecting the substrate 100 may be further provided. The protective film 170 is a lower protective film that protects the lower surface of the substrate 100 and may have an opening 170OP as shown in FIG. 23 . The opening 170OP corresponds to the first bending area 1BA, and the area of the opening 170OP may be larger than that of the first bending area 1BA. 23 shows that the width of the opening 170OP is wider than that of the first bending area 1BA.

Since the protective film 170 serves to protect the lower surface of the substrate 100, it may have its own rigidity. Accordingly, when the flexibility of the protective film 170 is low, peeling may occur between the protective film 170 and the substrate 100 as the substrate 100 is bent. Therefore, as shown in FIG. 23 , by making the protective film 170 have the opening 170OP corresponding to the first bending area 1BA, it is possible to effectively prevent such peeling from occurring. To this end, as described above, it is preferable to make the area of the opening 170OP of the protective film 170 wider than the area of the first bending area 1BA.

Meanwhile, in terms of allowing the protective film 170 to protect as large an area as possible on the lower surface of the substrate 100, it is necessary to minimize the area of the opening 170OP of the protective film 170. To this end, it is preferable that the area of the opening 170OP of the protective film 170 is larger than the area of the first bending region 1BA but smaller than the area of the first opening of the first inorganic insulating layer. Furthermore, it is more preferable that the area of the opening 170OP of the protective film 170 is smaller than the area of the portion where the uneven surface 160a of the organic layer 160 is formed. From this point of view, although the width of the opening 170OP is wider than that of the first bending region 1BA in FIG. It is shown as narrower than the width UEW of the portion where the surface 160a is formed. Of course, the protective film 170 having such a shape can also be applied to the above-described or later-described display devices.

Of course, in some cases, unlike the case shown in FIG. 23 , the protective film 170 may not cover the edge of the substrate 100 . That is, the protective film 170 may not exist in the second region 2A.

So far, the case where the first conductive layer 215c is simultaneously formed of the same material as the source electrode 215a or the drain electrode 215b of the thin film transistor 210 has been described, but the present invention is not limited thereto.

For example, as shown in FIG. 24, which is a schematic cross-sectional view of a part of a display device according to another embodiment of the present invention, various patterns of touch electrodes 710 for a touch screen function on the encapsulation layer 400 can be located. When forming the touch electrode 710, the first conductive layer 215c may be simultaneously formed of the same material. Of course, when the touch protection layer 720 covering the touch electrode 710 is formed to protect the touch electrode 710, a protection layer covering the first conductive layer 215c may also be formed at the same time. As such, the touch protection layer 720 may extend integrally from the display area DA to at least the first bending area 1BA. As such, when forming the touch electrode 710, the structure of simultaneously forming the first conductive layer 215c can be applied to the above-described or later-described display devices as a matter of course. Of course, unlike this, when forming the counter electrode 330, the first conductive layer 215c may be formed of the same material at the same time.

Meanwhile, in this case, the organic material layer 160 may be formed of the same material at the same time as the planarization layer 140 is formed. If necessary, the organic layer 160 may be formed in a separate process regardless of the planarization layer 140 . Alternatively, as shown in FIG. 25, which is a schematic cross-sectional view of a part of a display device according to another embodiment of the present invention, when forming the organic encapsulation layer 420 of the encapsulation layer 400, the same material is used. Various modifications are possible, such as simultaneously forming the organic material layer 160 .

Of course, when forming a layer other than the planarization layer 140, the organic layer 160 may be formed of the same material at the same time. For example, as shown in FIG. 26, which is a schematic cross-sectional view of a part of a display device according to another embodiment of the present invention, when the interlayer insulating film 130 is formed of an insulating organic material, the interlayer insulating film 130 is formed. Various modifications are possible, such as the simultaneous formation of the organic material layer 160 with the same material. For reference, since FIG. 26 is a cross-sectional view, the interlayer insulating film 130 and the organic material layer 160 are shown as separate layers by a contact hole through which the first conductive layer 215c is connected to the second conductive layers 213a and 213b. , In areas other than the contact hole, the interlayer insulating film 130 and the organic material layer 160 may be integral.

As such, when forming the interlayer insulating film 130 with an organic material, the structure in which the organic material layer 160 is simultaneously formed of the same material as the interlayer insulating film 130 can be applied to the display devices described above or later. In this case, as shown in FIG. 26 , the first conductive layer 215c may be simultaneously formed of the same material when forming the touch electrode 710 . In this case and as shown in FIG. 26 , the touch protection layer 720 may cover the first conductive layer 215c. Alternatively, an organic insulating layer other than the touch protection layer 720 may be required for a touch screen function. For example, another additional touch electrode may exist in addition to the touch electrode 710, and an organic insulating layer may be interposed between the touch electrode 710 and the additional touch electrode. In this case, the organic insulating layer may be extended to cover the first conductive layer 215c, or a layer formed of the same material as the organic insulating layer may cover the first conductive layer 215c.

Of course, the first conductive layer 215c may be formed of the same material at the same time as the source electrode 215a or the drain electrode 215b other than the touch electrode 710, and various modifications are possible. In this case, the first conductive layer 215c may be covered by the planarization layer 140 or another insulating layer.

So far, the case where the first inorganic insulating layer includes the gate insulating film 120 interposed between the semiconductor layer 211 and the gate electrode 213 has been described, but the present invention is not limited thereto. For example, as shown in FIG. 27, which is a schematic cross-sectional view of a part of a display device according to another embodiment of the present invention, the first inorganic insulating layer is interposed between the thin film transistor 210 and the substrate 100. It may include only the buffer layer 110 . In this case, the buffer layer 110 has an opening 110a, which can be referred to as a first opening. In addition, the gate insulating layer 120 may serve as the organic material layer 160 described in the above-described embodiments. That is, the gate insulating layer 120 may include an insulating organic material.

Of course, in this case, as shown in FIG. 27 , the gate insulating layer 120 may have an uneven surface 120b on at least a part of the upper surface within the first opening. In the case of the shape of the concave-convex surface 120b of the gate insulating film 120, the pitch or height between a plurality of protrusions of the concave-convex surface 120b, the concavo-convex portion of the organic layer 160 described above with reference to FIGS. 6 to 10 Descriptions of the shape of the surface 160a, the pitch or height between the plurality of protrusions of the concave-convex surface 160a may be applied as they are. Furthermore, similarly to the organic material layer 160 having a plurality of islands 160b spaced apart from each other as shown in FIG. may have Of course, in this case, the description of the pitch or height between the plurality of islands 160b described above with reference to FIGS. 21 and 22 may also be applied to the plurality of islands of the gate insulating layer 120 .

In this way, when the gate insulating film 120 serves as an organic material layer, the first conductive layer 215c is simultaneously formed of the same material when forming the source electrode 215a or the drain electrode 215b as shown in FIG. 27 . It can be. If the touch electrode 710 of various patterns for the touch screen function is located on the encapsulation layer 400 covering the organic light emitting element 300 as described above with reference to FIGS. 24 to 26, the touch electrode ( 710), various modifications such as the simultaneous formation of the first conductive layer 215c with the same material are possible.

28 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention. The display device according to the present embodiment includes a thin film transistor 210' in addition to the thin film transistor 210 in the display area DA. The thin film transistor 210' includes a semiconductor layer 211', a source electrode 215a', a drain electrode 215b', and a gate electrode 213'. In this case, the semiconductor layer 211' includes the same material as the semiconductor layer 211 and may be positioned on the same layer, and the source electrode 215a' and the drain electrode 215b' also include the source electrode 215a and the drain electrode ( 215b) and may be located on the same layer. However, the gate electrode 213' may be positioned on a different layer from the gate electrode 213.

Specifically, the gate insulating film 120' is positioned on the gate insulating film 120, and the source electrode 215a, the drain electrode 215b, the source electrode 215a', and the drain electrode 215b' are the gate insulating film 120'. ) It may be located on the interlayer insulating film 130 covering. The gate electrode 213 may be positioned on the gate insulating film 120, the gate insulating film 120' may cover the gate electrode 213, and the gate electrode 213' may be positioned on the gate insulating film 120'. there is. In this case, each of the buffer layer 110 or the gate insulating layer 120 may have openings 110a and 120a, and the gate insulating layer 120' may serve as the organic layer 160 described in the foregoing embodiments. That is, the gate insulating layer 120 may include an insulating organic material.

Of course, in this case, the gate insulating layer 120' may have an uneven surface 120'a on at least a part of the upper surface within the first opening, as shown in FIG. 28 . In the case of the shape of the concave-convex surface 120'a of the gate insulating film 120', the pitch or height between a plurality of protrusions of the concave-convex surface 120'a, the organic layer described above with reference to FIGS. 6 to 10 The description of the shape of the concave-convex surface 160a of 160, the pitch or height between a plurality of protrusions of the concave-convex surface 160a may be applied as it is. Furthermore, similar to the organic material layer 160 having a plurality of islands 160b spaced apart from each other as shown in FIG. 20, the gate insulating film 120' has a plurality of islands spaced apart from each other, unlike shown in FIG. may have Of course, in this case, the description of the pitch or height between the plurality of islands 160b described above with reference to FIGS. 21 and 22 may also be applied to the plurality of islands of the gate insulating layer 120'.

In this structure, the first conductive layer 215c may be formed of the same material as the source electrode 215a or the drain electrode 215b at the same time as shown in FIG. 28 . However, the present invention is not limited thereto, and the first conductive layer 215c may be formed of the same material when forming the gate electrode 213'. Furthermore, as described above with reference to FIGS. 24 to 26, when the touch electrodes 710 of various patterns for a touch screen function are located on the encapsulation layer 400 covering the organic light emitting device 300, the touch electrodes When forming 710, various modifications are possible, such as simultaneously forming the first conductive layer 215c with the same material.

For reference, in the case shown in FIG. 28, the interlayer insulating film 130 is located on the gate insulating film 120', which can be referred to as an organic material layer, and the first layer including the buffer layer 110 and the gate insulating film 120. The interlayer insulating film 130 has a second opening 130a corresponding to the first opening of the inorganic insulating layer. This interlayer insulating film may be understood as a second inorganic insulating layer.

29 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention. The difference between the display device according to this embodiment and the display device according to the previous embodiment with reference to FIG. 28 is that the first conductive layer 215c is made of the same material as the source electrode 215a or the drain electrode 215b at the same time. It is not formed, but is formed simultaneously with the same material as the gate electrode 213'.

Since the gate electrode 213' is positioned on the gate insulating film 120' covering the gate electrode 213, the first conductive layer 215c formed of the same material as the gate electrode 213' is the gate electrode ( 213) and the second conductive layers 213a and 213b formed of the same material and the gate insulating film 120' formed of an organic material are positioned on the concavo-convex surface 120'a. In this case, the interlayer insulating layer 130 may cover a part of the first conductive layer 215c if necessary. Of course, the interlayer insulating film 130 has an opening 130a corresponding to the openings 110a and 120a of the buffer layer 110 or the gate insulating film 120 so that bending in the first bending area 1BA is smoothly performed. can do.

As such, the position of the first conductive layer 215c, the material forming it, and the timing of forming it may be modified in various ways.

30 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention. The display device according to this embodiment is different from the display device according to the previous embodiment with reference to FIG. 29 in that it further includes an additional conductive layer 215d in addition to the first conductive layer 215c. As described above, if the first conductive layer 215c is formed of the same material as the gate electrode 213', the additional conductive layer 215d is formed of the same material as the source electrode 215a or the drain electrode 215b at the same time. It can be. The additional conductive layer 215d may be positioned on the first conductive layer 215c in at least the first bending area 1BA so as to be electrically connected to the first conductive layer 215c.

In the case of the display device according to the present embodiment, since the first conductive layer 215c and the additional conductive layer 215d exist in the first bending area 1BA, the conductive layer is multi-layered in the first bending area 1BA. have a structure. Therefore, even if a defect due to a crack or the like occurs in the first conductive layer 215c in the first bending area 1BA, the electrical signal can be transmitted to the display area DA without any problem by the additional conductive layer 215d. . Of course, even if a defect due to a crack or the like occurs in the additional conductive layer 215d, the electrical signal can be transferred to the display area DA without any problem by the first conductive layer 215c.

So far, it has been described that the organic layer 160 may be simultaneously formed of the same material as the gate insulating layer 120 , the gate insulating layer 120 ′, the interlayer insulating layer 130 , and/or the planarization layer 140 . However, the present invention is not limited thereto. For example, the organic material layer 160 may be formed by a process separate from a process of forming the gate insulating film 120, the gate insulating film 120', the interlayer insulating film 130, and/or the planarization layer 140. In addition, even if the gate insulating film 120, the gate insulating film 120', the interlayer insulating film 130, and/or the planarization layer 140 are formed of an organic material, the organic material layer 160 of the present invention is the gate insulating film 120, the gate It may be formed of a material different from that of the insulating film 120 ′, the interlayer insulating film 130 and/or the planarization layer 140 .

31 is a schematic cross-sectional view of a part of a display device according to another exemplary embodiment of the present invention. The difference between the display device according to the present embodiment and the display device according to the previous embodiment with reference to FIG. 30 is that the interlayer insulating film 130 is interposed between the first conductive layer 215c and the additional conductive layer 215d. point. At this time, by making the interlayer insulating film 130 include an insulating organic material, even if the interlayer insulating film 130 exists in the first bending region 1BA, the interlayer insulating film 130 or the first conductive layer 215c and/or the additional insulating film 130 are formed by bending. Damage to the conductive layer 215d or the like can be prevented.

In addition, the additional conductive layer 215d on the interlayer insulating film 130 is electrically connected to the first conductive layer 215c under the interlayer insulating film 130 through the contact hole of the interlayer insulating film 130 formed outside the first bending region 1BA. is connected to Through this, even if a defect such as a crack occurs in the first conductive layer 215c in the first bending area 1BA, the additional conductive layer 215d can ensure that the electrical signal is transmitted to the display area DA without problems. can Of course, even if a defect due to a crack or the like occurs in the additional conductive layer 215d, the electrical signal can be transferred to the display area DA without any problem by the first conductive layer 215c. In addition, since the interlayer insulating film 130 is interposed between the first conductive layer 215c and the additional conductive layer 215d, cracks generated in either the first conductive layer 215c or the additional conductive layer 215d are different from each other. It can effectively prevent growth as one.

Meanwhile, in the structure shown in FIGS. 30 and 31 , the width of the first conductive layer 215c may be different from the width of the additional conductive layer 215d in the first direction (+y direction). For example, the first conductive layer 215c and the second conductive layer 215d may be formed of different materials, and accordingly, the ductility of the material for forming the first conductive layer 215c and the material for forming the additional conductive layer 215d may be reduced. Ductility may be different. Greater ductility means that the probability of disconnection is relatively small even when tensile stress is applied. Therefore, it does not matter if the width of the first conductive layer 215c and the additional conductive layer 215d formed of a material having greater ductility is narrower than that of the others.

In the embodiments described so far, the first conductive layer 215c extends in the second direction (+x direction) in the first direction (+y direction) in which the concave-convex surface 160a on the upper surface of the organic material layer 160 extends. ) can intersect. The intersection angle may be 90 degrees as shown in FIG. 32, which is a plan view conceptually illustrating a portion of a display device according to an embodiment of the present invention, or may be an angle other than 90 degrees as shown in FIG. 33. For reference, reference numeral GD in FIGS. 32 and 33 denotes a direction in which the concave-convex surface 160a on the upper surface of the organic layer 160 extends. 33 shows that the direction in which the concave-convex surface 160a on the upper surface of the organic layer 160 extends is inclined with respect to the second direction (+x direction) when compared to FIG. 32, but the present invention is not limited thereto. . For example, as shown in FIG. 32, the direction in which the concave-convex surface 160a on the top surface of the organic layer 160 extends is the first direction (+y direction), and the direction the first conductive layer 215c extends in the second direction (+y direction). It may be a direction inclined with respect to the second direction (+x direction) other than the +x direction (for example, a direction forming an angle of 45 degrees with respect to the second direction (+x direction)). Of course, when there are a plurality of first conductive layers 215c, some of the plurality of first conductive layers 215c have different angles with respect to the second direction (+x direction), and some of the plurality of first conductive layers 215c have different angles to the second direction (+x direction). ) may be different from the angle formed with respect to

In addition, in FIGS. 32 and 33, the first conductive layer 215c is illustrated as having a shape extending straight in the second direction (+x direction), but the present invention is not limited thereto. For example, the first conductive layer 215c may have a shape extending straight in the second direction (+x direction) and have a plurality of through holes (extending in the +z direction) therein. This is a plan view in which at least a part of the first conductive layer 215c has a honeycomb-like structure in a plane (xy plane) intersecting the first direction (+y direction) and the second direction (+x direction). It can be understood that it can appear. Alternatively, the first conductive layer 215c does not extend straight in the second direction (+x direction), but is formed on a plane (xy plane) intersecting the first direction (+y direction) and the second direction (+x direction). It may have a zigzag form or wave form from side to side.

Meanwhile, as shown in FIGS. 32 and 33 , a plurality of first conductive layers 215c extending in the second direction (+x direction) may exist. At this time, unlike those shown in FIGS. 32 and 33, the distance between the centers of the first conductive layers 215c in the first bending area 1BA is the first in at least a part other than the first bending area 1BA. It may be wider than the distance between the centers of the first conductive layers 215c. Accordingly, the width of the first conductive layers 215c in the first bending area 1BA in the first direction (+y direction) is equal to or less than the first conductive layer 215c in at least a part other than the first bending area 1BA. It may be formed wider than the width of them in the first direction (+y direction). As the widths of the first conductive layers 215c in the first bending area 1BA are widened in this way, there is a possibility that the first conductive layers 215c may be disconnected due to stress caused by bending in the first bending area 1BA. can be drastically reduced.

Of course, the distance between the centers of the first conductive layers 215c in the first bending area 1BA and the distance between the centers of the first conductive layers 215c in at least a part other than the first bending area 1BA are may be substantially the same. Even in this case, the width of the first conductive layers 215c in the first bending area 1BA in the first direction (+y direction) is at least part of the first conductive layers 215c other than the first bending area 1BA. ) in the first direction (+y direction), it is possible to drastically reduce the possibility of disconnection of the first conductive layer 215c due to stress caused by bending in the first bending area 1BA. .

34 is a perspective view schematically illustrating a portion of a display device, specifically, a substrate 100 according to another embodiment of the present invention. 35 is a plan view schematically illustrating a shape of the substrate 100 of FIG. 34 before being bent.

Unlike that shown in FIG. 1 , the display device according to the present embodiment also has a second bending area 2BA in addition to the first bending area 1BA. The second bending area 2BA is located within the first area 1A. Similar to the case where the substrate 100 is bent around the first bending axis 1BAX extending in the first direction (+y direction) in the first bending area 1BA, the substrate 100 is bent in the second direction (+x direction). direction) is bent about the second bending axis 2BAX. At this time, the substrate 100 has a chamfered portion (CP) by being chamfered at a corner closest to a portion where the first bending axis 1BAX and the second bending axis 2BAX intersect. Since the chamfer portion CP exists, the substrate 100 can be simultaneously bent around the first bending axis 1BAX and the second bending axis 2BAX crossing the first bending axis 1BAX.

At this time, the radius of curvature R1 in the first bending area 1BA is smaller than the radius of curvature R2 in the second bending area 2BA. This can be understood that the bending is performed gently in the second bending area 2BA, unlike in the first bending area 1BA. Therefore, in the second bending area 2BA where the bending is performed gently, the tensile stress applied to the components of the display device is relatively smaller than the tensile stress applied to the components in the first bending area 1BA. Therefore, the first inorganic insulating layer as in the display devices according to the above-described embodiments has a first opening or a first groove in the first bending area 1BA, but a second bending area in the first area 1A ( 2BA) may be continuous at least in part. Here, at least a part is because the first inorganic insulating layer may have contact holes for electrical connection of conductive layers positioned above and below the first region 1A. Here, it can be understood that the contact hole or the like appears in a circular, elliptical, square, or similar shape when viewed from a plan view, and the first opening or first groove appears in a rectangular shape with a very large aspect ratio when viewed from a plan view.

A display element may not exist in the first bending area 1BA, but a display element may exist in the second bending area 2BA belonging to the first area 1A. Accordingly, a display device in which at least a part is bent may be implemented. In addition, by allowing the display device to be bent in the second bending area 2BA, when the user looks at the display surface of the display device, the user may recognize that the display is not performed and the area of the peripheral area where the pad is located is narrowed.

Meanwhile, since the chamfer portion CP exists as described above, the substrate 100 may be simultaneously bent around the first bending axis 1BAX and the second bending axis 2BAX crossing the first bending axis 1BAX. At this time, as shown in FIG. 35 , the chamfer portion CP may be rounded so that a sharp angle is not formed in a portion toward the center of the substrate 100 .

As shown in FIG. 34, when the first bending area 1BA is bent around the first bending axis 1BAX and the second bending area 2BA is bent around the second bending axis 2BAX, chamfering occurs. A large stress is applied to the corner CN of the portion CP facing the central portion of the substrate 100, so that the substrate 100 or the like may be torn or damaged. Therefore, in order to prevent such a defect from occurring, as shown in FIG. 35 , the chamfered portion CP may be rounded so that no sharp angle is formed at the corner CN toward the central portion of the substrate 100 . At this time, the radius of curvature at the corner CN of the chamfer CP facing the central portion of the substrate 100 may be approximately 1/20 to 1/5 of the radius of curvature of the first bending region 1BA, preferably. may be 1/10.

In addition, when the first bending area 1BA is bent around the first bending axis 1BAX and the second bending area 2BA is bent around the second bending axis 2BAX, the substrate ( 100), the end of the first bending area 1BA in the direction of the first area 1A, as shown in FIG. 35, is chamfered ( CP) may be positioned closer to the edge of the substrate 100 than the extension line of the first cutting line 1CL. For example, the distance between the end of the first bending area 1BA in the direction of the first area 1A and the extension line of the first cutting line 1CL may be approximately 500um.

Of course, the central end of the substrate 100 of the second bending area 1BA may also be positioned closer to the edge of the substrate 100 than the extension line of the second cutting line 2CL of the chamfer CP. At this time, as described above, since the radius of curvature R2 in the second bending area 2BA is greater than the radius of curvature R1 in the first bending area 1BA, bending in the second bending area 2BA is difficult. The magnitude of stress applied to the corner CN of the chamfer CP is smaller than the magnitude of stress applied to the corner CN of the chamfer CP by bending in the first bending region 1BA. Therefore, the distance between the end of the second bending area 1BA in the central direction of the substrate 100 and the extension line of the second cutting line 2CL is equal to the end of the first bending area 1BA in the direction of the first area 1A. It may be shorter than the distance between extension lines of the first cutting line 1CL.

Of course, the description of the corner CN of the chamfer CP can also be applied to the foregoing or later-described embodiments or variations thereof.

34 shows that the display device has only the second bending area 2BA in addition to the first bending area 1BA, but the present invention is not limited thereto. For example, as shown in FIG. 36, which is a schematic perspective view of a part of a display device according to another embodiment of the present invention, a third bending area in addition to the first bending area 1BA or the second bending area 2BA. (3BA) and a fourth bending area (4BA) may also be provided. In the case of such a display device, it may be understood that all four edges are bent in a display device having four edges. In this case, the third bending area 3BA and the fourth bending area 4BA may have the same/similar configuration as the second bending area 2BA.

Of course, display elements may be present in the second bending area 2BA, the third bending area 3BA, and the fourth bending area 4BA belonging to the first area 1A. Accordingly, a display device in which all edges are bent may be implemented. In addition, by bending the display device in the second bending area 2BA to the fourth bending area 4BA, the display is not performed when the user looks at the display surface of the display device, and the area of the peripheral area where the pad is located is reduced. It can be perceived as narrowed down.

Meanwhile, unlike that shown in FIG. 36, as shown in FIG. 37, which is a perspective view schematically illustrating a part of a display device according to another embodiment of the present invention, the first bending area 1BA and the second area (2A) may exist in the opposite direction (−x direction) in addition to the second direction (+x direction). As in the second area 2A in the second direction (+x direction), various types of electronic devices are also located or corresponding to the second area 2A in the opposite direction (−x direction) to the second direction (+x direction). A printed circuit board or the like may be electrically connected to the region.

In this way, the present invention has been described with reference to the embodiments shown in the drawings, but this is only exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

1A: first area 2A: second area
1BA: 1st bending area 1BAX: 1st bending axis
2BA: 2nd bending area 2BAX: 2nd bending axis
100: substrate 110: buffer layer
120, 120': gate insulating film 130: interlayer insulating film
110a, 120a, 130a: opening 140: planarization layer
150: pixel defining layer 160: organic material layer
160a: uneven surface 160b: island
210, 210': thin film transistor 211, 211': semiconductor layer
213, 213': gate electrode 213a, 213b: second conductive layer
215a, 215a': source electrode 215b, 215b': drain electrode
215c: first conductive layer 300: display element
310: pixel electrode 320: intermediate layer
330: counter electrode

Claims (27)

Board;
a first inorganic insulating layer disposed on the substrate and having a first opening or a first groove;
a first conductive layer disposed on the first inorganic insulating layer;
a second inorganic insulating layer disposed on the first conductive layer, having a second opening or a second groove, and having a contact hole;
a first organic material layer on the first opening or first groove and the second opening or second groove;
A second conductive layer positioned on the first organic material layer, extending above the first opening or first groove and the second opening or second groove, and electrically connected to the first conductive layer through the contact hole. ; and
a second organic material layer disposed on the second conductive layer;
A display device comprising a. According to claim 1,
A display device bent in the first opening or the first groove. According to claim 2,
and a third organic material layer disposed on the second organic material layer above the first opening or first groove. According to claim 3,
Further comprising a thin film transistor disposed on the substrate and including a semiconductor layer, a source electrode, a drain electrode and a gate electrode,
The first inorganic insulating layer is disposed between the substrate and the gate electrode, the display device. According to claim 4,
The second inorganic insulating layer is disposed on the gate electrode, the display device. According to claim 4,
A display device comprising an inorganic encapsulation layer and an organic encapsulation layer, further comprising an encapsulation layer covering the thin film transistor. According to claim 6,
Further comprising a touch electrode disposed on the encapsulation layer, the display device. According to claim 1,
A width of the second opening or the second groove is wider than a width of the first opening or the first groove. According to claim 8,
and a third organic material layer disposed on the second organic material layer above the first opening or first groove. According to claim 9,
Further comprising a thin film transistor disposed on the substrate and including a semiconductor layer, a source electrode, a drain electrode and a gate electrode,
The first inorganic insulating layer is disposed between the substrate and the gate electrode, the display device. According to claim 10,
The second inorganic insulating layer is disposed on the gate electrode, the display device. According to claim 11,
A display device comprising an inorganic encapsulation layer and an organic encapsulation layer, further comprising an encapsulation layer covering the thin film transistor. According to claim 12,
Further comprising a touch electrode disposed on the encapsulation layer, the display device. Board;
a first inorganic insulating layer disposed on the substrate and having a first opening or a first groove;
a first conductive layer disposed on the first inorganic insulating layer;
a second inorganic insulating layer disposed on the first conductive layer, having a second opening or a second groove wider than the width of the first opening or the first groove, and having a contact hole;
a second conductive layer extending above the first opening or first groove and the second opening or second groove and electrically connected to the first conductive layer through the contact hole; and
a second organic material layer directly contacting the second conductive layer;
A display device comprising a. According to claim 14,
A display device bent in the first opening or the first groove. According to claim 14,
and a third organic material layer disposed on the second organic material layer above the first opening or first groove. According to claim 14,
Further comprising a thin film transistor disposed on the substrate and including a semiconductor layer, a source electrode, a drain electrode and a gate electrode,
The first inorganic insulating layer is disposed between the substrate and the gate electrode, the display device. According to claim 17,
The second inorganic insulating layer is disposed on the gate electrode, the display device. According to claim 17,
A display device comprising an inorganic encapsulation layer and an organic encapsulation layer, further comprising an encapsulation layer covering the thin film transistor. According to claim 19,
Further comprising a touch electrode disposed on the encapsulation layer, the display device. According to claim 14,
The display device further comprises a first organic material layer positioned above the first opening or first groove and the second opening or second groove and positioned between the substrate and the second conductive layer. According to claim 21,
Further comprising a third inorganic insulating layer located under the semiconductor layer, the display device. The method of claim 22,
The third inorganic insulating layer has a third opening exposing a portion of the substrate, the display device. The method of claim 22,
The third opening has the same shape as the first opening or the first groove. According to claim 24,
wherein the first organic material layer directly contacts the second conductive layer and the part of the substrate. According to claim 25,
A display device comprising an inorganic encapsulation layer and an organic encapsulation layer, further comprising an encapsulation layer covering the thin film transistor. The method of claim 26,
Further comprising a touch electrode disposed on the encapsulation layer, the display device.

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