KR20230000610A - Apparatus and method for processing substrate - Google Patents

Abstract

A substrate processing device capable of uniformly heating a substrate is provided. The processing device includes: a process chamber forming an inner space; a source for generating microwaves; and a dielectric which receives the microwaves, diffuses and transmits the microwaves into an internal space, and transmits the microwaves to a substrate. The dielectric includes a first region having a first transmission rate of microwaves with respect to the substrate, and a second region having a second transmission rate smaller than the first transmission rate.

Description

Substrate processing apparatus and substrate processing method {Apparatus and method for processing substrate}

The present invention relates to a substrate processing apparatus and a substrate processing method.

Processes for processing glass substrates or wafers in the semiconductor manufacturing process include a photoresist coating process, a developing process, an etching process, an ashing process, a cleaning process, and Various processes such as In an etching process or a cleaning process, microwaves are applied to heat the substrate.

When a substrate is heated using microwaves, the substrate may be heated nonuniformly depending on the positional relationship between a device for applying microwaves and the substrate. For example, a portion of the substrate that overlaps with the microwave application unit may be heated more, while another portion of the substrate that does not overlap with the microwave application unit may not be sufficiently heated.

An object to be solved by the present invention is to provide a substrate processing apparatus capable of uniformly heating a substrate during a substrate processing process.

An object to be solved by the present invention is to provide a substrate processing method capable of uniformly heating a substrate during a substrate processing process.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing apparatus of the present invention for achieving the above object is a process chamber forming an inner space, a source for generating microwaves, and receiving the microwaves to diffuse and transmit them into the inner space to transmit them to the substrate. The dielectric may include a first region having a first transmission rate of the microwave with respect to the substrate, and a second region having a second transmission rate smaller than the first transmission rate.

The first area may have a first surface roughness, and the second area may have a second surface roughness smaller than the first surface roughness.

The first region may have a first permittivity, and the second region may have a second permittivity smaller than the first permittivity.

A part or all of the first region may overlap the source.

The second area may surround the first area.

The first region may include any one of AlN, Al2O3, and SiC, and the second region may include any one of BN, Si3N4, and BeO.

Another aspect of the substrate processing apparatus of the present invention for achieving the above object includes a process chamber forming an inner space, a source for generating microwaves, and an area of north water, receiving the microwaves to diffuse and transmit into the inner space. and a dielectric that transmits the microwave to a substrate, wherein the plurality of regions are arranged in a concentric circle shape, and each of the plurality of regions can transmit the microwave to the substrate at a different transmission rate.

Another aspect of the substrate processing apparatus of the present invention for achieving the above object includes a source for generating microwaves and a dielectric that receives the microwaves and diffuses and transmits them into the internal space to transmit them to the substrate, wherein the dielectric comprises: It may include a center region having a first surface roughness, and an edge region surrounding the center region and having a second surface roughness smaller than the first surface roughness.

One aspect of the substrate processing method of the present invention for achieving the other object is a process chamber forming an inner space, a substrate support part installed in the inner space and supporting a substrate, a source and a first region for generating microwaves, and A substrate processing apparatus including a second region and a dielectric material receiving and transmitting microwaves to the substrate, carrying the substrate into the inner space, disposing the substrate in the substrate support unit, and disposing the substrate in the substrate support unit, annealing the substrate by transmitting the microwaves to the inner space through a region and the second region, wherein the dielectric transmits the microwaves to the substrate at a first transmission rate through the first region; The microwave may be transmitted to the substrate at a second transmission rate lower than the first transmission rate through the second region.

1 is a conceptual diagram for explaining a dielectric according to some embodiments of the present invention.
2 to 5 are plan views illustrating dielectrics according to first to fourth embodiments.
6 is a conceptual diagram for explaining a dielectric according to some other embodiments of the present invention.
7 is a plan view showing a dielectric according to a fifth embodiment.
8 is a diagram illustrating a substrate processing apparatus including a dielectric according to some embodiments of the present invention.
9 and 10 are enlarged views of A of FIG. 8 .
11 is a diagram illustrating a substrate processing apparatus including a dielectric according to some other embodiments of the present invention.
FIG. 12 is an enlarged view illustrating B of FIG. 11 .
13 is a diagram illustrating a substrate processing apparatus including a dielectric material according to another exemplary embodiment of the present invention.
14 is a plan view illustrating a dielectric according to some other embodiments of the present invention.
15 is a diagram illustrating a substrate processing apparatus including a dielectric material according to some other embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

When an element or layer is referred to as being "on" or "on" another element or layer, it is not only directly on the other element or layer, but also when another layer or other element is intervening therebetween. All inclusive. On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. As used herein, "comprises" and/or "comprising" means that a stated component, step, operation, and/or element is present in the presence of one or more other components, steps, operations, and/or elements. or do not rule out additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in a meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

1 is a conceptual diagram for explaining a dielectric according to some embodiments of the present invention. 2 to 5 are plan views illustrating dielectrics according to first to fourth embodiments.

Referring to FIG. 1 , during a process of heating a substrate using microwaves, a dielectric 10 and a microwave source 20 may be used.

The dielectric 10 may include a first bend 101 , a second bend 102 and a dielectric plate 103 . The dielectric 10 may include a first region R1 and a second region R2. The dielectric 10 may transmit microwaves received from the microwave source 20 to the substrate W.

The first region R1 includes a region overlapping the microwave source 20 . The second region R2 includes a region that does not overlap with the microwave source 20 . In other words, the shortest distance between the first region R1 and the microwave source 20 is shorter than the shortest distance between the second region R2 and the microwave source 20 . Accordingly, the amount of microwaves that the dielectric 10 receives from the microwave source 20 is greater in the first region R1 than in the second region R2.

The first region R1 and the second region R2 may include a first bend 101 and a second bend 102 formed convexly from the dielectric plate 103 toward the substrate W, respectively. . That is, the first region R1 and the second region R2 may have surface roughness by including the protrusion-shaped first bend 101 and the second bend 102 .

The first region R1 and the second region R2 each have different surface roughness. For example, the first bend 101 included in the first region R1 and the second bend 102 included in the second region R2 may have different sizes. For another example, the number of first bends 101 included in the first region R1 and the number of second bends 102 included in the second region R2 may be different.

In FIG. 1 , the size of the first bend 101 and the second bend 102 are different, and the number is different at the same time, but the embodiment is not limited thereto. For example, the first bend 101 and the second bend 102 have the same size, and the first region R1 and the second region R2 have different numbers of first bends 101 and A second bend 102 may be included. For another example, the number of first bends 101 and second bends 102 included in the first region R1 and the second region R2 is the same, and The size of the second bend 102 may be different. That is, only the first region R1 and the second region R2 have different surface roughness, and the size and number of bends forming the surface roughness of each region are not limited to the embodiment.

As the microwaves provided from the microwave source 20 pass through the first and second regions R1 and R2, each having different surface roughness, the degree to which they are refracted in the first region R1 and the second region R2 may vary. For example, microwaves provided from the microwave source 20 are more refracted while passing through the first refracting part 101 of the first region R1, while the second refracting part 102 of the second region R2 It can be relatively less refracted while passing through.

As described above, although the amount of microwaves supplied from the microwave source 20 to the dielectric 10 is greater in the first region R1 than in the second region R2, the microwaves supplied from the microwave source 20 By relatively being refracted more in the first region R1 and refracted less in the second region R2, the amount of microwaves transmitted to the substrate W can be controlled. Accordingly, the substrate W heated by the microwaves can be heated to a uniform temperature regardless of the location of the microwave source 20 .

In FIG. 1 , the dielectric 10 is illustrated as including a first region R1 and a second region R2, but the embodiment is not limited thereto. For example, the dielectric 10 may further include a third region. The dielectric 10 may include a plurality of regions having different surface roughness.

The arrangement of the first bend 101 and the second bend 102 and the arrangement of the first region R1 and the second region R2 of the dielectric 10 may be variously changed according to embodiments. there is.

Referring to FIG. 2 , the first region R1 of the dielectric 10 may partially overlap the microwave source 20 . The first region R1 of the dielectric 10 may include a bend having a larger size than the bend of the second region R2 . The bends of the first region R1 of the dielectric 10 may be arranged in a cross shape. The bends of the second region R2 of the dielectric 10 may be arranged in a radial shape. The second region R2 of the dielectric 10 may be disposed in a shape surrounding the first region R1. That is, the first region R1 and the second region R2 may be aligned in a concentric circle shape.

Referring to FIG. 3 , all portions of the first region R1 of the dielectric 11 may overlap the microwave source 20 . A portion of the second region R2 of the dielectric 11 bordering the first region R1 may partially overlap the microwave source 20 . Similarly, the bends of the first region R1 of the dielectric 11 may be arranged in a cross shape. The bent portion of the second region R2 of the dielectric 11 may be arranged in a radial shape. The second region R2 of the dielectric 11 may be disposed to surround the first region R1.

Referring to FIG. 4 , the first region R1 of the dielectric 12 and the microwave source 20 may completely overlap each other. The first region R1 of the dielectric 12 may include bends of different sizes. The second region R2 of the dielectric 12 may include a bent portion having a predetermined size. The bent parts of the first region R1 and the second region R2 of the dielectric 12 may be irregularly arranged.

Referring to FIG. 5 , the dielectric 13 may include a first region R1 , a second region R2 , and a third region R3 . The first region R1 , the second region R2 , and the third region R3 of the dielectric 13 may be aligned in parallel in one direction. The first region R1 may be disposed in the center including the diameter of the dielectric 13 . The second region R2 may be spaced apart and aligned in parallel with the first region R1 interposed therebetween. The third region R3 may be spaced apart and aligned in parallel with the first region R1 and the second region R2 interposed therebetween. The first region R1 may partially overlap the microwave source 20 . The second region R2 and the third region R3 may not overlap the microwave source 20 . The first region R1 of the dielectric 13 may include a bend having a larger size than the bends of the second and third regions R2 and R3. The second region R2 and the third region R3 of the dielectric 13 may include a bend smaller than that of the first region R1 and each having the same size. The third region R3 of the dielectric 13 may include fewer bends than the second region R2.

6 is a conceptual diagram for explaining a dielectric according to some other embodiments of the present invention. 7 is a plan view showing a dielectric according to a fifth embodiment. For convenience of explanation, the description will focus on differences from those described with reference to FIGS. 1 to 5 .

Referring to FIG. 6 , the dielectric 10 may include a first region R1 , a second region R2 , and a third region R3 .

The first region R1 includes a region overlapping the microwave source 20 . The second region R2 may or may not partially or entirely overlap the microwave source 20 . The third region R3 necessarily includes a region that does not overlap with the microwave source 20 . In other words, the shortest distance between the first region R1 and the microwave source 20 is shorter than the shortest distance between the second region R2 and the microwave source 20 . Also, the shortest distance between the second region R2 and the microwave source 20 is shorter than the shortest distance between the third region R3 and the microwave source 20 . Accordingly, the amount of microwaves received by the dielectric 10 from the microwave source 20 is greater in the first region R1 than in the second region R2, and in the second region R2 than in the third region R3. more.

The first region R1 , the second region R2 , and the third region R3 may each include different dielectric materials having different dielectric constants. The dielectric constant of the first region R1 may be greater than that of the second region R2. The dielectric constant of the second region R2 may be greater than that of the third region R3. For example, the first region R1 may include SiC, the second region R2 may include any one of AlN and Al2O3, and the third region R3 may include any one of BN, Si3N4, and BeO. can

The dielectric 10 transmits microwaves received from the microwave source 20 to the substrate W in different amounts through the first region R1, the second region R2, and the third region R3, each having a different permittivity. can For example, since the first region R1 having the highest dielectric constant has a large capacitance, the ratio of the amount of microwaves transmitted to the substrate W through the dielectric 10 among the microwaves provided from the microwave source 20 is A microwave transmittance may be lowest in the first region R1 of the dielectric 10 .

In addition, since the third region R3 having the lowest permittivity has a small capacitance, the microwave transmittance may be highest in the third region R3 of the dielectric 10 . Since the second region R2 having a permittivity higher than the third region R3 and lower than the first region R1 has a capacitance higher than the third region R3 and lower than the first region R1, the microwave transmittance is the first. It may be higher than the first region R1 and lower than the third region R3.

As described above, the amount of microwaves received by the dielectric 10 from the microwave source 20 is greater in the second region R2 than in the third region R3, and is greater in the first region R1 than in the second region R2. ), the microwave transmittance in each region is different, so the amount of microwave transmitted to the substrate W through the dielectric 10 can be uniformly controlled. Accordingly, the substrate W heated by the microwaves can be heated to a uniform temperature regardless of the location of the microwave source 20 .

In FIG. 6 , the dielectric 10 is illustrated as including a first region R1 , a second region R2 , and a third region R3 , but the embodiment is not limited thereto. For example, the dielectric 10 may include only the first region R1 and the second region R2.

Arrangements of the first region R1 , the second region R2 , and the third region R3 of the dielectric 10 may be variously changed according to embodiments.

Referring to FIG. 7 , the second region R2 may be disposed in a shape surrounding the first region R1. The third region R3 may be disposed in a shape surrounding the second region R2. That is, the first region R1, the second region R2, and the third region R3 may be aligned in a concentric circle shape.

In FIG. 7 , the first region R1 , the second region R2 , and the third region R3 are illustrated as being concentrically arranged, but the embodiment is not limited thereto. For example, the first region R1 , the second region R2 , and the third region R3 are the first region R1 , the second region R2 , and the third region R3 shown in FIG. 5 . They may also be arranged side by side, such as

8 is a diagram illustrating a substrate processing apparatus including a dielectric according to some embodiments of the present invention. 9 and 10 are enlarged views of A of FIG. 8 .

Referring to FIG. 8 , the substrate processing apparatus including the dielectric according to the first embodiment includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, an antenna unit ( 500), a slow wave plate 600 and a dielectric plate 700.

The processing chamber 100 has a processing space 140 formed therein, and the processing space 140 is provided as a space in which a substrate W processing process is performed. The process chamber 100 includes a body 110 and a cover 120 . The upper surface of the body 110 is open and a space is formed therein. The cover 120 is placed on top of the body 110 and seals the open upper surface of the body 110. The inside of the lower end of the cover 120 is stepped so that the upper space has a larger radius than the lower space.

An exhaust hole 130 may be formed on a bottom surface of the process chamber 100 . The exhaust hole 130 is connected to the exhaust line 131 . By exhausting through the exhaust line 131, the inside of the process chamber 100 may be maintained at a pressure lower than normal pressure. In addition, reaction by-products generated during the process and gas remaining in the process chamber 100 may be discharged to the outside through the exhaust line 131 .

A substrate entrance 106 may be formed on one sidewall of the process chamber 100 . The substrate entrance 106 may be opened and closed by a door.

An inner surface of the process chamber 100 may be made of an insulating component such as quartz to protect the process chamber 100 from plasma. For example, the inner wall 111 and the lower surface 112 of the process chamber 100 may include quartz.

The substrate support unit 200 supports the substrate W inside the processing space 140 . The substrate support unit 200 includes a support plate 210 , a heater 220 and a support shaft 230 .

The support plate 210 has a predetermined thickness and is provided as a disk having a larger radius than the substrate W. A substrate W is placed on the upper surface of the support plate 210 . According to the embodiment, the support plate 210 is not provided with a structure for fixing the substrate (W), and the substrate (W) is provided to the process while being placed on the upper surface of the support plate 210 . Alternatively, the support plate 210 may be provided as an electrostatic chuck for fixing the substrate W using electrostatic force or a chuck for fixing the substrate W using a mechanical clamping method.

A plurality of lift pins are provided and located in each of pin holes (not shown) formed in the support plate 210 . The lift pins move vertically along the pin holes, and may load the substrate W onto the support plate 210 or unload the substrate W placed on the support plate 210 .

The heater 220 is provided inside the support plate 210 . The heater 220 is provided as a spiral coil and may be buried inside the support plate 210 at regular intervals. The heater 220 is connected to an external power source (not shown) and generates heat by resisting a current applied from the external power source. The generated heat is transferred to the substrate (W) via the support plate 210 and heats the substrate (W) to a predetermined temperature.

The support shaft 230 is located below the support plate 210 and supports the support plate 210 .

The gas supply unit 300 supplies process gas to the processing space 140 . The gas supply unit 300 includes a gas storage unit 310 , a valve 320 , and a gas supply line 330 . The valve 320 may open and close the gas supply line 330 and adjust the supply flow rate of the process gas. The gas supply unit 300 processes the process gas stored in the gas storage unit 320 into the process chamber 100 through the gas supply hole 130 formed on the sidewall of the process chamber 100 and the gas supply line 330. gas can be supplied. A plurality of gas supply holes 105 may be provided.

The microwave application unit 400 applies microwaves to the metal layer 510 . The microwave application unit 400 includes a microwave generator 410, a first waveguide 420, a second waveguide 430, a phase converter 440, and a matching network 450.

The microwave generator 410 generates microwaves necessary to excite the process gas into a plasma state.

The first waveguide 420 is connected to the microwave generator 410, and a passage is formed therein. The microwaves generated by the microwave generator 410 are transferred to the phase converter 440 along the first waveguide 420 .

The second waveguide 430 includes an outer conductor 432 and an inner conductor 434 .

The external conductor 432 extends downward from the end of the first waveguide 420 in a vertical direction, and a passage is formed therein. The upper end of the external conductor 432 is connected to the lower end of the first waveguide 420 , and the lower end of the external conductor 432 is connected to the upper end of the cover 120 .

Inner conductor 434 is positioned within outer conductor 432 . The inner conductor 434 is provided as a cylindrical rod, and its longitudinal direction is parallel to the vertical direction. The upper end of the inner conductor 434 is inserted into and fixed to the lower end of the phase shifter 440 . The inner conductor 434 extends downward and its lower end is located inside the process chamber 100 . The lower end of the inner conductor 434 is fixedly coupled to the center of the metal layer 510 . The inner conductor 434 is disposed perpendicular to the upper surface of the metal layer 510 . The inner conductor 434 may be provided by sequentially coating a first plating film and a second plating film on a rod made of copper. According to an embodiment, the first plating layer may be made of nickel (Ni), and the second plating layer may be made of gold (Au). Microwaves mainly propagate to the metal layer 510 through the first plating layer.

The phase-converted microwaves in the phase converter 440 are transferred to the metal layer 510 along the second waveguide 430 .

The phase shifter 440 is provided at a point where the first waveguide 420 and the second waveguide 430 are connected, and changes the phase of the microwave. The phase shifter 440 may be provided in a cone shape with a pointed bottom. The phase converter 440 propagates the microwave transmitted from the first waveguide 420 to the second waveguide 430 in a mode-converted state. The phase shifter 440 may convert microwaves from a Transverse Electric (TE) mode to a Transverse Electro Magnetic (TEM) mode.

A matching network 450 is provided in the first waveguide 420 . The matching network 450 matches the microwave propagating through the first waveguide 420 to a predetermined frequency.

The antenna plate 500 may be provided in a plate shape. For example, the antenna plate 500 may be provided as a circular plate having a thin thickness. The antenna plate 500 may be disposed on the substrate support unit 200 to face the support plate 210 .

The slow wave plate 600 is located above the antenna plate 500 and is provided as a disk having a predetermined thickness. The slow wave plate 600 may have a radius corresponding to the inside of the cover 120 . The slow wave plate 600 is provided with a dielectric such as alumina or quartz. Microwaves propagated in a vertical direction through the inner conductor 434 propagate in a radial direction of the slow wave plate 600 . Wavelengths of microwaves propagated to the slow wave plate 600 are compressed and resonated.

Dielectric plate 700 transmits microwaves from metal layer 510 to processing space 140 . The metal layer 510 and the dielectric plate 700 are provided in close contact with each other. The dielectric plate 700 is provided on the upper surface of the processing space 140 . That is, the dielectric plate 700 is located below the metal layer 510 and is provided as a disk having a predetermined thickness. The dielectric plate 700 is made of a dielectric such as quartz. The bottom of the dielectric plate 700 may be positioned at the same height as the lower end of the cover 120 . The side of the dielectric plate 700 is stepped so that the upper end has a larger radius than the lower end. An upper end of the dielectric plate 700 is placed on a stepped lower end of the cover 120 . The lower end of the dielectric plate 700 has a smaller radius than the lower end of the cover 120 and maintains a predetermined distance from the lower end of the cover 120 . Microwaves are radiated into the processing space 140 of the process chamber 100 through the dielectric plate 700 .

Referring to FIGS. 8 to 10 , a dielectric ( 10 in FIG. 1 ) described above with reference to FIGS. 1 to 5 may be applied to the dielectric plate 700 . That is, the dielectric plate 700 may include a bent portion. The dielectric plate 700 may include a first region R1 and a second region R2. The dielectric plate 700 may transmit microwaves to the processing space 140 and the substrate W through the first region R1 and the second region R2 .

The first region R1 includes an area overlapping the inner conductor 434 . The second region R2 necessarily includes a region that does not overlap with the inner conductor 434 . In other words, the shortest distance between the first region R1 and the inner conductor 434 is shorter than the shortest distance between the second region R2 and the inner conductor 434 . Accordingly, the amount of microwaves that the dielectric plate 700 receives from the inner conductor 434 may be greater in the first region R1 than in the second region R2.

The first region R1 and the second region R2 of the dielectric plate 700 each have different surface roughness. For example, the bent part included in the first region R1 and the bent part included in the second region R2 may have different sizes. For another example, the number of bends included in the first region R1 and the number of bends included in the second region R2 may be different. 8 to 10, the first region R1 of the dielectric plate 700 includes both large and small bends, and the second region R2 includes only the small bends. can do.

As the microwaves supplied from the microwave application unit 400 pass through the first and second regions R1 and R2, each having different surface roughness, they are refracted in the first region R1 and the second region R2. degree may vary. For example, microwaves passing through the first region R1 having a larger surface roughness are refracted more while passing through the refracting unit, while microwaves passing through the second region R2 having a smaller surface roughness pass through the refracting unit and Relatively little can be refracted. Accordingly, the microwave transmitted through the dielectric plate 700 can be uniformly transmitted to the substrate W.

Referring to FIG. 9 , the dielectric plate 700 may include a bent part including a material different from that of the dielectric plate 700 .

Referring to FIG. 10 , the dielectric plate 700 may include a bend made of the same material integrally formed with the dielectric plate 700 .

11 is a diagram illustrating a substrate processing apparatus including a dielectric according to some other embodiments of the present invention. FIG. 12 is an enlarged view illustrating B of FIG. 11 . For convenience of description, the description will focus on differences from those described with reference to FIGS. 8 to 10 .

Referring to FIGS. 11 and 12 , a dielectric ( 10 in FIG. 6 ) described above with reference to FIGS. 6 and 7 may be applied to the dielectric plate 700 . That is, the dielectric plate 700 may include a first region R1 , a second region R2 , and a third region R3 each having a different permittivity. The dielectric constant of the first region R1 may be greater than that of the second region R2. The dielectric constant of the second region R2 may be greater than that of the third region R3. For example, the first region R1 may include SiC, the second region R2 may include any one of AlN and Al2O3, and the third region R3 may include any one of BN, Si3N4, and BeO. can

The first region R1 includes an area overlapping the inner conductor 434 . The second region R2 may or may not partially or entirely overlap the inner conductor 434 . The third region R3 includes a region that does not overlap with the inner conductor 434 . In other words, the shortest distance between the first region R1 and the inner conductor 434 is shorter than the shortest distance between the second region R2 and the inner conductor 434 . Also, the shortest distance between the second region R2 and the inner conductor 434 is shorter than the shortest distance between the third region R3 and the inner conductor 434 . Accordingly, the amount of microwaves received by the dielectric plate 700 from the internal conductor 434 is greater in the first region R1 than in the second region R2, and more in the second region R2 than in the third region R3. more in

The dielectric plate 700 transmits microwaves received from the internal conductor 434 to the substrate W at different transmission rates through the first region R1, the second region R2, and the third region R3, each having a different dielectric constant. can For example, since the first region R1 having the highest permittivity has a large capacitance, the ratio of the amount of microwaves transmitted to the substrate W through the dielectric plate 700 among the microwaves received from the inner conductor 434 Phosphorus microwave transmittance may be lowest in the first region R1 of the dielectric plate 700 .

Also, since the third region R3 having the lowest permittivity has a small capacitance, the microwave transmittance may be highest in the third region R3 of the dielectric plate 700 . Since the second region R2 having a permittivity higher than the third region R3 and lower than the first region R1 has a capacitance greater than the third region R3 and smaller than the first region R1, the microwave transmittance is the first. It may be higher than the first region R1 and lower than the third region R3.

Accordingly, the amount of microwaves received by the dielectric plate 700 from the inner conductor 434 is greater in the second region R2 than in the third region R3, and is greater in the first region R1 than in the second region R2. The amount of microwaves transmitted to the substrate W via the dielectric plate 700 may be uniform, even though there is more in .

13 is a diagram illustrating a substrate processing apparatus including a dielectric material according to another exemplary embodiment of the present invention. 14 is a plan view illustrating a dielectric according to some other embodiments of the present invention. For convenience of description, the description will focus on differences from those described with reference to FIGS. 8 to 12 .

Referring to FIGS. 13 and 14 , the dielectric plate 700 described above with reference to FIGS. 1 to 7 ( 10 in FIG. 1 and 10 in FIG. 6 ) may be applied. That is, the dielectric plate 700 may include a first region R1 , a second region R2 , and a third region R3 each having a different permittivity and a different surface roughness. The dielectric constant of the first region R1 may be greater than that of the second region R2. The dielectric constant of the second region R2 may be greater than that of the third region R3. At the same time, the surface roughness of the first region R1 may be greater than that of the second region R2. The surface roughness of the second region R2 may be greater than that of the third region R3.

As the microwaves supplied from the internal conductor 434 of the microwave application unit 400 pass through the first region R1, the second region R2, and the third region R3, each having a different permittivity and surface roughness, Transmittance from the first region R1 , the second region R2 , and the third region R3 to the substrate W and the degree of refraction of microwaves may vary.

For example, since the first region R1 having the highest permittivity has a large capacitance, the ratio of the amount of microwaves transmitted to the substrate W through the dielectric plate 700 among the microwaves received from the inner conductor 434 Phosphorus microwave transmittance may be lowest in the first region R1 of the dielectric plate 700 . Since the third region R3 having the lowest permittivity has a small capacitance, the microwave transmittance may be highest in the third region R3 of the dielectric plate 700 . Since the second region R2 having a permittivity higher than the third region R3 and lower than the first region R1 has a capacitance greater than the third region R3 and smaller than the first region R1, the microwave transmittance is the first. It may be higher than the first region R1 and lower than the third region R3.

In addition, when passing through the first region R1 having a larger surface roughness than the second region R2, the microwave may be refracted more in the first region R1 than in the second region R2 while passing through the refracting unit. . In addition, when passing through the second region R2 having a larger surface roughness than the third region R3, the microwave may be refracted more in the second region R2 than in the third region R3 while passing through the refracting part. .

Accordingly, the amount of microwaves received by the dielectric plate 700 from the inner conductor 434 is greater in the second region R2 than in the third region R3, and is greater in the first region R1 than in the second region R2. Although there are more in , microwaves transmitted to the substrate W via the dielectric plate 700 may be uniform.

15 is a diagram illustrating a substrate processing apparatus including a dielectric material according to some other embodiments of the present invention. For convenience of explanation, the description will focus on differences from those described with reference to FIGS. 8, 11, and 13 .

Referring to FIG. 15 and FIG. 2 , the substrate processing apparatus includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, a plasma source 500, and a dielectric plate 700.

The substrate support unit 200 may include a pillar part 210 and a ring assembly 230 . The pillar portion 210 may support the dielectric plate 700 and the ring assembly 230 . The ring assembly 230 focuses the plasma onto the substrate W. Ring assembly 250 includes an inner ring 232 and an outer ring 234 . The inner ring 232 is provided in an annular ring shape surrounding the dielectric plate 210 . The inner ring 232 is positioned at the edge area of the base 230 . The upper surface of the inner ring 232 is provided to have the same height as the upper surface of the dielectric plate 210 . The inner portion of the top surface of the inner ring 232 supports the edge area of the bottom surface of the substrate (W). The outer ring 234 is provided in an annular ring shape surrounding the inner ring 232 . The outer ring 234 is positioned adjacent to the inner ring 232 in the edge region of the base 230 . The upper surface of the outer ring 234 is provided with a higher height than the upper surface of the inner ring 232 . According to one example, the focus ring may be provided with a material including ceramic.

The plasma source 500 excites the process gas in the chamber 100 into a plasma state. As the plasma source 500, an inductively coupled plasma (ICP) source may be used. The plasma source 500 includes an antenna 510 and an external power source 530. The antenna 510 is disposed on the outer upper portion of the chamber 100 . The antenna 510 is provided in a spiral shape that is wound multiple times and is connected to an external power source 530 . The antenna 510 receives power from an external power source 530 . The antenna 510 to which power is applied forms a discharge space in the processing space 140 of the chamber 100 . The process gas remaining in the discharge space may be excited into a plasma state.

The dielectric plate 700 transmits microwaves from the microwave applying unit 400 to the substrate W. The dielectric plate 700 is positioned under the substrate W and may be provided as a disk having a predetermined thickness.

The dielectric plate 700 described above may be applied. For example, the dielectric plate 700 may include a first region R1 and a second region R2 each having a different permittivity. The dielectric constant of the first region R1 may be greater than that of the second region R2.

The first area R1 may include an area overlapping the microwave applying unit 400 . The second region R2 necessarily includes a region that does not overlap with the microwave application unit 400 . In other words, the shortest distance between the first region R1 and the microwave applying unit 400 is shorter than the shortest distance between the second region R2 and the microwave applying unit 400 . Accordingly, the amount of microwaves supplied to the dielectric plate 210 from the microwave application unit 400 is greater in the first region R1 than in the second region R2.

The dielectric plate 700 may transmit microwaves received from the microwave application unit 400 to the substrate W at different transmission rates through the first region R1 and the second region R2 having different dielectric constants. Accordingly, although the amount of microwaves to the dielectric plate 700 received from the microwave application unit 400 is greater in the first region R1 than in the second region R2, the substrate ( The microwaves delivered to W) may be uniform.

Although the dielectric plate 700 is illustrated in FIG. 15 as including a first region R1 and a second region R2 each having a different permittivity, the embodiment is not limited thereto. For example, the dielectric plate 700 may include a first region R1 and a second region R2 having different surface roughness. As another example, the dielectric plate 700 may include a first region R1 and a second region R2 having different permittivity and surface roughness.

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

10: dielectric 20: microwave source
100: process chamber 200: substrate support unit
300: gas supply unit 400: microwave application unit
500: antenna unit 600: wave plate
700: dielectric plate

Claims (9)

a process chamber forming an inner space;
a source that generates microwaves; and
Including a dielectric that receives the microwaves, diffuses and transmits them into the inner space, and transmits them to the substrate,
The dielectric,
a first region having a first transmittance of the microwave to the substrate;
A substrate processing apparatus comprising a second region having a second transmittance smaller than the first transmittance. According to claim 1,
The first region has a first surface roughness,
The substrate processing apparatus of claim 1 , wherein the second region has a second surface roughness smaller than the first surface roughness. According to claim 1,
The first region has a first permittivity,
The second region has a second permittivity smaller than the first permittivity, the substrate processing apparatus. According to claim 1,
The first region,
A part or all of the first region overlaps the source. According to claim 1,
The second area surrounds the first area, the substrate processing apparatus. According to claim 1,
The first region includes any one of AlN, Al2O3 and SiC,
The second region includes any one of BN, Si3N4 and BeO. a process chamber forming an inner space;
a source that generates microwaves; and
Including a plurality of regions, including a dielectric that receives the microwaves, diffuses and transmits them into the inner space, and transmits them to the substrate,
The plurality of regions are arranged in a concentric circle shape,
Each of the plurality of areas,
A substrate processing apparatus that transmits the microwaves to the substrate at different transmission rates. a process chamber forming an inner space;
a source that generates microwaves; and
Including a dielectric that receives the microwaves, diffuses and transmits them into the inner space, and transmits them to the substrate,
The dielectric,
A substrate processing apparatus comprising: a center region having a first surface roughness; and an edge region surrounding the center region and having a second surface roughness smaller than the first surface roughness. a process chamber forming an inner space;
a substrate support unit installed in the inner space and supporting a substrate;
a source that generates microwaves; and
Providing a substrate processing apparatus including a dielectric including a first region and a second region and receiving and transmitting the microwave to the substrate;
carrying the substrate into the inner space and disposing the substrate on the substrate support;
annealing the substrate by transmitting the microwave to the inner space through the first region and the second region;
The dielectric,
Transmitting the microwave to the substrate at a first transmission rate through the first region;
Transmitting the microwave to the substrate at a second transmission rate smaller than the first transmission rate through the second region.

Images