KR20220169923A - Manufacturing method of mask and mask - Google Patents

Abstract

The present invention relates to a manufacturing method for a photomask and a photomask thereof, capable of reducing investment for enlarging a photomask. The photomask includes: a first end part; a second end part facing the first end part in a first direction; and a middle part positioned between the first end part and the second end part and including a through hole group. The manufacturing method for a photomask includes: a middle part forming step of forming the outer circumference and the through hole group of the middle part on a substrate; a first end part forming step of forming the outer circumference of the first end part on the substrate; and a second end part forming step of forming the outer circumference of the second end part on the substrate. The middle part forming step includes: a process of exposing a resist layer on the substrate by using a first exposure photomask; and a step of etching the substrate by interposing the resist layer exposed and developed. The first end part forming step includes: a process of exposing the resist layer on the substrate by using a second exposure photomask; and a process of etching the substrate by interposing the resist layer exposed and developed. Also, the first end part forming step includes a process of processing the substrate by using a laser.

Description

Mask manufacturing method and mask {MANUFACTURING METHOD OF MASK AND MASK}

An embodiment of the present disclosure relates to a mask manufacturing method and a mask.

Organic devices such as organic EL display devices are attracting attention. [0002] As a method of forming elements of an organic device, a method of attaching a material constituting an element to a substrate by vapor deposition is known. For example, first, a substrate on which a first electrode is formed in a pattern corresponding to an element is prepared. Subsequently, an organic material is deposited on the first electrode through the through hole of the mask, and an organic layer is formed on the first electrode. Subsequently, a second electrode is formed on the organic layer.

As a method of manufacturing a mask, a method of forming a through hole by etching a substrate such as a metal plate is known. The manufacturing method includes a step of exposing a resist layer on a substrate using an exposure mask, and a step of etching the substrate through the exposed and developed resist layer.

Japanese Patent No. 3539597

As one of the means for reducing the manufacturing cost of organic devices, an increase in the size of the substrate can be considered. When the substrate is enlarged, the mask is also enlarged, and manufacturing equipment for manufacturing the mask is also enlarged. For example, in order to manufacture a mask corresponding to the eighth generation substrate, an exposure mask corresponding to the eighth generation substrate is required. However, in order to enlarge an exposure mask, a huge investment is required.

Embodiment of this indication provides the manufacturing method of the mask which can solve such a subject effectively.

In the method for manufacturing a mask according to an embodiment of the present disclosure, the mask has first and second ends facing each other in a first direction, and is positioned between the first and second ends, and the through hole You may provide the intermediate part containing a group. The manufacturing method includes: an intermediate portion forming step of forming an outer edge of the intermediate portion and the group of through holes in an original substrate; a first end portion forming step of forming an outer edge of the first end portion in the original substrate; A second end forming step for forming an outer edge of the second end portion may be provided. The intermediate portion forming step may include a process of exposing a resist layer on the original substrate using a first exposure mask, and a process of etching the original substrate through the exposed and developed resist layer. The first end forming step may include a process of exposing a resist layer on the original substrate using a second exposure mask, and a process of etching the original substrate through the exposed and developed resist layer. Alternatively, the first end forming step may include a process of processing the original substrate using a laser.

According to one embodiment of the present disclosure, it is possible to reduce the investment for increasing the size of the mask.

1 is a cross-sectional view showing an example of an organic device.
2 is a plan view showing an example of an organic device group.
3 is a cross-sectional view showing an example of a deposition apparatus.
4 is a plan view showing an example of a mask device.
5 is a plan view showing an example of a mask.
6 is a plan view showing an enlarged first end of the mask of FIG. 5;
FIG. 7 is a cross-sectional view of the mask of FIG. 6 viewed from an AA direction.
8 is a cross-sectional view showing a substrate used to manufacture a mask.
9A is a plan view showing an example of a process of exposing a resist layer using a first exposure mask.
Fig. 9B is a cross-sectional view of the substrate of Fig. 9A viewed from the BB direction.
10A is a plan view showing an example of a resist layer exposed by a first exposure mask.
FIG. 10B is a cross-sectional view of the substrate of FIG. 10A viewed from the CC direction.
11A is a plan view showing an example of a process of exposing a resist layer using a second exposure mask and a third exposure mask.
Fig. 11B is a cross-sectional view of the substrate of Fig. 11A viewed from the DD direction.
12A is a plan view showing an example of a resist layer exposed by a second exposure mask and a third exposure mask.
FIG. 12B is a cross-sectional view of the substrate of FIG. 12A viewed from the EE direction.
13 is a cross-sectional view showing an example of an etched substrate.
14A is a plan view showing an example of a mask formed on a substrate.
Fig. 14B is a cross-sectional view of the substrate of Fig. 14A viewed from the FF direction.
15 is a plan view showing an example of a process of fixing a mask to a mask support.
16A is a plan view showing an example of a mask formed on a substrate in the second embodiment.
Fig. 16B is a cross-sectional view of the substrate of Fig. 16A viewed from the GG direction.
Fig. 17A is a plan view showing an example of a step for forming a first end portion and a second end portion in the second embodiment.
Fig. 17B is a cross-sectional view of the substrate of Fig. 17A viewed from the HH direction.
Fig. 18 is a plan view showing an example of a mask in the third embodiment.
19 is a plan view showing an enlarged first end of the mask of FIG. 18;
Fig. 20 is a plan view showing an example of a mask in the fourth embodiment.
21A is an enlarged plan view of a first end of the mask of FIG. 20;
21B is a plan view showing an example of the first end of the mask.
22 is a plan view showing an example of the first end of the mask.
Fig. 23 is a plan view showing an example of a mask in the fifth embodiment.
24 is a plan view showing an example of a process of exposing a resist layer using a first exposure mask in the sixth embodiment.
Fig. 25 is a plan view showing an example of a resist layer exposed by the first exposure mask in the sixth embodiment.
26 is a plan view showing an example of a process of exposing a resist layer using a second exposure mask in the sixth embodiment.
27 is a plan view showing an example of a mask in the sixth embodiment.
28A is a plan view showing an example of a mask in the seventh embodiment.
28B is a plan view showing an enlarged middle portion of the mask of FIG. 28A.
28C is a plan view showing an example of a process of exposing a resist layer using a first exposure mask.
28D is a plan view showing an example of a resist layer exposed by a first exposure mask.
28E is a plan view showing an example of a process of exposing a resist layer using a second exposure mask.
Fig. 28F is a plan view showing an example of a reference mark.
Fig. 29 is a plan view showing the mask of the embodiment.
30A is a diagram showing an image including a first stepped portion at a first end and an image including a mark.
FIG. 30B is a diagram showing an image including a second stepped portion at a first end and an image including a mark.
30C is a diagram showing an image including a first stepped portion at a second end and an image including a mark.
30D is a diagram showing an image including a second stepped portion at a second end and an image including a mark.
Fig. 31 is a diagram showing evaluation results of Examples 1 to 49;
32 is a diagram showing evaluation results of Examples 50 to 56;
Fig. 33 is a diagram showing the evaluation results of Examples 57 to 66;

In this specification and this drawing, unless otherwise specified, a term meaning a substance that is the basis of a certain configuration, such as a "substrate", a "base material", a "plate", a "sheet", or a "film", is a name Based only on the difference in , they are not distinguished from each other.

In this specification and this drawing, unless otherwise specified, terms such as "parallel" or "orthogonal" or values of lengths or angles that specify shapes or geometrical conditions and their degree, for example, are in the strict sense. It is not constrained, and the analysis includes the range to which similar functions can be expected.

In this specification and this drawing, unless otherwise specified, a certain configuration such as a certain member or a certain region is "on" or "below", "above" or "under" another configuration such as another member or other area. In the case of “downward”, or “upward” or “downward”, a case in which a certain element is in direct contact with another element is included. In addition, a case where a separate configuration is included between a certain configuration and another configuration, that is, a case where they are indirectly in contact with each other is also included. In addition, as long as there is no special explanation, the phrases such as "upper" or "upper side" or "upper side" or "lower side" or "lower side" or "lower side" may be reversed in the vertical direction.

In this specification and the drawings, unless otherwise specified, the same or similar reference numerals are assigned to the same parts or parts having similar functions, and repeated explanations thereof are omitted in some cases. In addition, the ratio of dimensions in the drawing may differ from the actual ratio for convenience of description, or a part of the configuration may be omitted from the drawing.

In this specification and this drawing, unless otherwise specified, one embodiment in this specification can be combined with other embodiments to the extent that no contradiction occurs. In addition, other embodiments can also be combined within a range in which contradiction does not occur.

In this specification and this drawing, unless otherwise specified, in the case of starting two or more steps or processes in a method such as a manufacturing method, other steps or processes that are not disclosed may be added between the disclosed steps or processes. may be carried out. In addition, the order of the disclosed steps or processes is arbitrary within the range in which a contradiction does not arise.

In this specification and this drawing, unless otherwise specified, the numerical range represented by the symbol "to" includes the numerical values before and after the symbol "to". For example, the numerical range defined by the expression "34-38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

In one embodiment of the present specification, an example in which a mask is used to form an organic material or an electrode on a substrate when manufacturing an organic EL display device will be described. However, the use of the mask is not particularly limited, and the present embodiment can be applied to masks used for various uses. For example, the mask of this embodiment may be used to form a device electrode for displaying or projecting an image or video for expressing virtual reality, so-called VR, or augmented reality, so-called AR. In addition, in order to form electrodes of display devices other than organic EL display devices, such as electrodes of a liquid crystal display device, you may use the mask of this embodiment. In addition, in order to form electrodes of organic devices other than display devices, such as electrodes of a pressure sensor, you may use the mask of this embodiment.

A first aspect of the present disclosure is a method for manufacturing a mask,

The mask has first and second ends facing each other in a first direction, and an intermediate portion located between the first and second ends and including a group of through holes;

The manufacturing method,

An intermediate portion forming step of forming an outer edge of the intermediate portion and the group of through holes in an original substrate;

a first end forming step of forming an outer edge of the first end on the original substrate;

a second end forming step for forming an outer edge of the second end on the original substrate;

The intermediate portion forming step includes a process of exposing a resist layer on the original substrate using a first exposure mask, and a process of etching the original substrate through the exposed and developed resist layer,

The first end forming step,

A process of exposing a resist layer on the original substrate using a second exposure mask, and a process of etching the original substrate through the exposed and developed resist layer, or

Including a process of processing the original substrate using a laser,

manufacturing method.

In the second aspect of the present disclosure, in the manufacturing method according to the first aspect described above, the second end forming step includes a process of exposing the resist layer on the original substrate using a third exposure mask, exposure and development It may also include a process of etching the original substrate through the resist layer. Alternatively, the second end portion forming step may include a process of processing the original substrate using a laser.

In the third aspect of the present disclosure, in the manufacturing method according to each of the above-described first aspect or the above-described second aspect, the first exposure mask may have a rectangle including a first side and a second side. . 1250 mm or more may be sufficient as the said 1st side. 1100 mm or more may be sufficient as the said 2nd side.

In the fourth aspect of the present disclosure, in the manufacturing method according to each of the above-described first aspect to the above-described third aspect, the thickness of the original substrate may be 40 μm or less.

A fifth aspect of the present disclosure is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

The first side edge portion includes a first step portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;

The dimension of the first stepped portion in the second direction is 1 mm or less,

The first end portion is a mask including a first mark located on the first surface or the second surface.

In a sixth aspect of the present disclosure, in the mask according to the fifth aspect described above, the dimension of the first stepped portion in the second direction may be 2.5 μm or more.

In the seventh aspect of the present disclosure, in the mask according to each of the above-described fifth aspect or the above-described sixth aspect, the first stepped portion faces outward in the first direction and outward in the second direction. A displaced outer step may be provided.

In an eighth aspect of the present disclosure, in the mask according to each of the fifth aspect or the sixth aspect described above, the first stepped portion faces outward in the first direction and inward in the second direction. A displaced inner step may be provided.

In a ninth aspect of the present disclosure, in the mask according to each of the above-described fifth aspect or the above-mentioned sixth aspect, the second side edge is located at the boundary between the first end and the middle portion, and is in the first direction You may also include the 2nd stepped part displaced in the orthogonal 2nd direction. A dimension of the second stepped portion in the second direction may be 1 mm or less.

In a tenth aspect of the present disclosure, in the mask according to the ninth aspect described above, the first step portion and the second step portion are displaced outward in the second direction when facing outward in the first direction. Outside steps may be provided.

In an eleventh aspect of the present disclosure, in the mask according to the ninth aspect described above, the first stepped portion and the second stepped portion are displaced inward in the second direction when facing outward in the first direction. An inner step may be provided.

In a twelfth aspect of the present disclosure, in the mask according to the ninth aspect, the first stepped portion may be an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction, The second stepped portion may be an inner stepped portion that is displaced inward in the second direction when facing outward in the first direction.

In a thirteenth aspect of the present disclosure, in the mask according to each of the above-described fifth aspect to the above-described twelfth aspect, the intermediate portion is a first intermediate mark located in a first side edge area spreading along the first side edge portion. may be included, and the distance between the first stepped portion and the first intermediate mark in the first direction may be 5 mm or less.

In a fourteenth aspect of the present disclosure, in the mask according to the thirteenth aspect, a distance between the first stepped portion and the first intermediate mark in the first direction, in the second direction The ratio of the dimensions of the first stepped portion may be 1.0 or less.

A fifteenth aspect of the present disclosure is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

A direction in which the first side edge of the first end portion extends is deviated by 0.0007° or more from a direction in which the first side edge portion of the intermediate portion extends;

The first end portion is a mask including a first mark located on the first surface or the second surface.

In a sixteenth aspect of the present disclosure, in the mask according to the fifteenth aspect, the direction in which the second side edge of the first end extends is 0.0007° or more relative to the direction in which the second side edge of the middle portion extends. may be inconsistent.

A seventeenth aspect of the present disclosure is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

In plan view, the intermediate portion includes a center coincident with the center of the mask in the first direction and has a dimension of 1250 mm in the first direction;

The first end portion is a mask including a first mark located on the first surface or the second surface.

An eighteenth aspect of the present disclosure is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

The first side edge portion includes a first step portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;

The first stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction,

The dimension of the first stepped portion in the second direction is 10 μm or more,

The second side edge portion includes a second stepped portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;

The second stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction;

The dimension of the second stepped portion in the second direction is 10 μm or more,

The first end portion is a mask including a first mark located on the first surface or the second surface.

In a nineteenth aspect of the present disclosure, in the mask according to each of the above-mentioned fifth aspect to the above-mentioned eighteenth aspect, the middle portion is formed by the first side edge and the above-mentioned middle portion in a second direction orthogonal to the first direction. You may also include the 1st intermediate mark located between the groups of through holes. A distance between the first mark and the first intermediate mark in the second direction may be 4 mm or less.

In the twentieth aspect of the present disclosure, in the mask according to each of the fifth aspect to the nineteenth aspect, the substrate may have a thickness of 40 μm or less.

EMBODIMENT OF THE INVENTION One Embodiment of this indication is described in detail, referring drawings. In addition, embodiment described below is an example of embodiment of this indication, and this indication is limited only to these embodiment, and is not interpreted.

An organic device 100 having an element formed by using a mask will be described. 1 is a cross-sectional view showing an example of an organic device 100 .

The organic device 100 includes a substrate 110 including a first surface 111 and a second surface 112 and a plurality of elements 115 positioned on the first surface 111 of the substrate 110. include Element 115 is, for example, a pixel. The elements 115 may be arranged along the in-plane direction of the first surface 111 . The substrate 110 may include two or more types of elements 115 . For example, the substrate 110 may include the first element 115A and the second element 115B. Although not shown, the substrate 110 may include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

The element 115 may include a first electrode 120 , an organic layer 130 positioned on the first electrode 120 , and a second electrode 140 positioned on the organic layer 130 . The element formed by using the mask may be the organic layer 130 or the second electrode 140 . An element formed by using a mask is also referred to as a deposition layer.

The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in plan view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap the end of the first electrode 120 in plan view.

The organic device 100 may be of an active matrix type. For example, although not shown, the organic device 100 may include a switch electrically connected to each of the plurality of elements 115 . The switch is, for example, a transistor. The switch can control ON/OFF of the voltage or current for the corresponding element 115 .

The substrate 110 may be a plate-shaped member having insulating properties. The substrate 110 preferably has transparency that transmits light. As the material of the substrate 110, for example, a rigid material without flexibility such as quartz glass, Pyrex (registered trademark) glass, synthetic quartz plate, or the like, or a flexible material having flexibility such as a resin film, a resin plate for optics, and thin glass, etc. Ash, etc. can be used. In addition, the base material may be a laminate having a barrier layer on one side or both sides of the resin film.

The element 115 realizes a certain function by applying a voltage between the first electrode 120 and the second electrode 140 or by flowing a current between the first electrode 120 and the second electrode 140. is configured to For example, when the element 115 is a pixel of an organic EL display device, the element 115 may emit light constituting an image.

The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a metal oxide having conductivity, or an inorganic material having other conductivity. The first electrode 120 may contain a metal oxide having transparency and conductivity, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

The organic layer 130 includes an organic material. When current is applied to the organic layer 130, the organic layer 130 can exhibit a certain function. Energization means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130 . As the organic layer 130, a light emitting layer or the like that emits light by being energized can be used. The organic layer 130 may contain an organic semiconductor material. Properties such as transmittance and refractive index of the organic layer 130 may be appropriately adjusted.

As shown in FIG. 1 , the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light emitting layer, a blue light emitting layer, and a green light emitting layer.

When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. When the organic layer 130 is a light emitting layer, light is emitted from the organic layer 130 and the light is extracted from the second electrode 140 side or the first electrode 120 side to the outside.

The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

The second electrode 140 includes a conductive material such as metal. The second electrode 140 is formed on the organic layer 130 by a deposition method using a mask. Examples of materials constituting the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), and indium zinc oxide. (IZO), carbon, and the like can be used. These materials may be used individually or may be used in combination of two or more types. When using two or more types, you may laminate|stack the layer which consists of each material. Moreover, you may use the alloy containing two or more types of materials. For example, magnesium alloys, such as MgAg, and aluminum alloys, such as AlLi, AlCa, and AlMg, can be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferably used as the material of the second electrode 140 . You may use an alloy of alkali metals and alkaline earth metals. For example, you may use lithium fluoride, sodium fluoride, potassium fluoride, etc.

The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of the other element 115 .

The second electrode 140 may be composed of one layer. For example, the second electrode 140 may be a layer formed by a deposition process using one mask.

Alternatively, as shown in FIG. 1 , the second electrode 140 may include a first layer 140A and a second layer 140B. The first layer 140A may be a layer formed by a deposition process using a first mask. The second layer 140B may be a layer formed by a deposition process using a second mask. In this way, the second electrode 140 may be formed using two or more masks. As a result, the degree of freedom of the pattern of the second electrode 140 in a planar view is increased. For example, the organic device 100 may include a region in which the second electrode 140 does not exist when viewed from a plan view. An area where the second electrode 140 does not exist may have higher transmittance than an area where the second electrode 140 exists.

As shown in FIG. 1, the edge part of 140 A of 1st layers, and the edge part of 2nd layer 140B may partially overlap. Accordingly, the first layer 140A and the second layer 140B can be electrically connected.

Although not shown, the second electrode 140 may include other layers such as a third layer. Other layers such as the third layer may be electrically connected to the first layer 140A and the second layer 140B.

In the following description, among the configurations of the second electrode 140, when a configuration common to the first layer 140A, the second layer 140B, the third layer, etc. is described, "the second electrode 140 」 is used.

In the manufacturing method of the organic device 100, the organic device group 102 as shown in FIG. 2 may be manufactured. The organic device group 102 includes two or more organic devices 100 . For example, the organic device group 102 may include the organic devices 100 arranged in the first direction D1 and the second direction D2. The second direction D2 is a direction orthogonal to the first direction D1. Two or more organic devices 100 may have a common substrate 110 . For example, the organic device group 102 is located on one substrate 110, and includes a first electrode 120, an organic layer 130, and a second electrode 140 constituting two or more organic devices 100. ) and the like may be included. By dividing the organic device group 102, the organic device 100 is obtained.

As will be described later, the first direction D1 may be the direction in which the mask 50 used to manufacture the organic device 100 extends.

The dimension A1 of the organic device 100 in the first direction D1 may be, for example, 10 mm or more, 30 mm or more, or 100 mm or more. Dimension A1 may be, for example, 200 mm or less, 500 mm or less, or 1000 mm or less. The range of dimension A1 may be determined by the first group consisting of 10 mm, 30 mm, and 100 mm, and/or the second group consisting of 200 mm, 500 mm, and 1000 mm. The range of dimension A1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of dimension A1 may be determined by any combination of two of the values included in the first group described above. The range of dimension A1 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension A1 may be 10 mm or more and 1000 mm or less, 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 30 mm or less, or 30 mm or more and 1000 mm or less, 30 mm or more and 500 mm or less, 30 mm or more and 200 mm or less, 30 mm or more and 100 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 1000 mm or less, 200 mm It may be more than 500 mm or less, and may be 500 mm or more and 1000 mm or less.

The dimension A2 of the organic device 100 in the second direction D2 may be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. Dimension A2 may be, for example, 100 mm or less, 200 mm or less, or 500 mm or less. The range of dimension A2 may be determined by the first group consisting of 10 mm, 20 mm and 50 mm, and/or the second group consisting of 100 mm, 200 mm and 500 mm. The range of the dimension A2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension A2 may be determined by any combination of two of the values included in the first group described above. The range of the dimension A2 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension A2 may be 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 500 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 50 mm or more and 500 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 500 mm or less, 100 mm It may be more than 200 mm or less, and may be 200 mm or more and 500 mm or less.

The organic device group 102 includes a device area 103 in which a plurality of organic devices 100 are located. The device area 103 has a dimension G12 in the first direction D1 and a dimension G22 in the second direction D2.

By enlarging the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. This increases the number of organic devices 100 formed on one substrate 110 . In this way, the manufacturing cost of the organic device 100 can be reduced.

The dimension G11 of the substrate 110 in the first direction D1 may be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. The dimension G11 may be, for example, 1200 mm or less, 1300 mm or less, 1900 mm or less, 2100 mm or less, or 2300 mm or less. The range of the dimension G11 may be determined by a first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm, and/or a second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of the dimension G11 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension G11 may be determined by any combination of two of the values included in the first group described above. The range of the dimension G11 may be determined by any combination of two of the values included in the second group described above. For example, the dimension G11 may be 1000 mm or more and 2300 mm or less, 1000 mm or more and 2100 mm or less, 1000 mm or more and 1900 mm or less, 1000 mm or more and 1300 mm or less, 1000 mm or more and 1200 mm or less, 1200 mm or more and 2300 mm or less, 1200 mm or more and 2100 mm or less, 1200 mm or more and 1900 mm or less, 1200 mm or more and 1300 mm or less, 1300 mm or more and 2300 mm or less, 1300 mm or more and 2100 mm or less, 1300 mm or more and 1900 mm or less, 1900 mm or more and 2300 mm or less, It may be more than 2100 mm or less, and may be 2100 mm or more and 2300 mm or less.

The dimension G21 of the substrate 110 in the second direction D2 may be, for example, 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. Dimension G21 may be, for example, 1300 mm or less, 2300 mm or less, 2400 mm or less, or 2600 mm or less. The range of the dimension G21 may be determined by a first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and/or a second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of the dimension G21 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension G21 may be determined by any combination of two of the values included in the first group described above. The range of the dimension G21 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension G21 may be 1200 mm or more and 2600 mm or less, 1200 mm or more and 2400 mm or less, 1200 mm or more and 2300 mm or less, 1200 mm or more and 1500 mm or less, 1200 mm or more and 1300 mm or less, 1300 mm or more and 2600 mm or less, 1300 mm or more and 2400 mm or less, 1300 mm or more and 2300 mm or less, 1300 mm or more and 1500 mm or less, 1500 mm or more and 2600 mm or less, 1500 mm or more and 2400 mm or less, 1500 mm or more and 2300 mm or less, 2000 mm or more and 2300 mm or less, It may be more than 2600 mm or less, 2300 mm or more and 2400 mm or less may be sufficient, and 2400 mm or more and 2600 mm or less may be sufficient.

A specific numerical range of the dimension G11 and a specific numerical range of the dimension G21 may be combined. For example, the dimension G11 may be 1000 mm or more and 1200 mm or less, and the dimension G21 may be 1200 mm or more and 1300 mm or less. For example, the dimension G11 may be 1200 mm or more and 1300 mm or less, and the dimension G21 may be 2000 mm or more and 2300 mm or less. For example, the dimension G11 may be 2100 mm or more and 2300 mm or less, and the dimension G21 may be 2400 mm or more and 2600 mm or less.

Next, a method of forming elements such as the organic layer 130 and the second electrode 140 by a vapor deposition method will be described. 3 is a diagram showing the deposition apparatus 10 . The deposition apparatus 10 performs a deposition process of depositing a deposition material on the substrate 110 .

As shown in FIG. 3 , the deposition apparatus 10 may include a deposition source 6 , a heater 8 and a mask device 15 therein. In addition, the deposition apparatus 10 may further include an exhaust unit for setting the inside of the deposition apparatus 10 to a vacuum atmosphere. The evaporation source 6 is, for example, a crucible, and accommodates evaporation materials 7 such as organic materials and metal materials. The heater 8 heats the evaporation source 6 and evaporates the evaporation material 7 under a vacuum atmosphere. The mask device 15 is disposed facing the crucible 6 .

As shown in FIG. 3 , the mask device 15 includes at least one mask 50 . The mask device 15 may include a mask support 40 that supports the mask 50 . The mask support 40 may include a frame 41 including an opening 43 . The mask 50 may be fixed to the frame 41 so as to cross the opening 43 in plan view. The frame 41 may support the mask 50 with the mask 50 stretched in the plane direction so as to suppress bending of the mask 50 .

As shown in FIG. 3 , the mask device 15 is disposed in the deposition device 10 such that the mask 50 faces the first surface 111 of the substrate 110 . The mask 50 includes a plurality of through holes 56 through which the evaporation material 7 flying from the evaporation source 6 passes. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as a first surface 551 . A surface of the mask 50 positioned opposite to the first surface 551 is referred to as a second surface 552 .

As shown in FIG. 3 , the deposition apparatus 10 may include a substrate holder 2 holding the substrate 110 . The substrate holder 2 may be movable in the thickness direction of the substrate 110 . The substrate holder 2 may be movable in the surface direction of the substrate 110 . The substrate holder 2 may be configured to control the inclination of the substrate 110 . For example, the substrate holder 2 may include a plurality of chucks installed on the outer periphery of the substrate 110 . Each chuck may be independently movable in the thickness direction or surface direction of the substrate 110 .

By moving at least one of the substrate holder 2 and the mask holder 3, the position of the mask 50 relative to the substrate 110 can be adjusted.

As shown in FIG. 3 , the deposition apparatus 10 may include a cooling plate 4 disposed on the side of the second surface 112 of the substrate 110 . The cooling plate 4 may have a flow path for circulating a refrigerant inside the cooling plate 4 . The cooling plate 4 can suppress an increase in the temperature of the substrate 110 during the deposition process.

As shown in FIG. 3 , the deposition apparatus 10 may include a magnet 5 arranged on the side of the second surface 112 of the substrate 110 . The magnet 5 may be disposed on the surface of the cooling plate 4 far from the substrate 110 . The magnet 5 can pull the mask 50 closer to the substrate 110 by magnetic force. As a result, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. As a result, generation of shadows in the deposition process can be suppressed. The shadow is a phenomenon in which the evaporation material 7 enters the gap between the mask 50 and the substrate 110, and thereby the shape of the evaporation layer becomes non-uniform. The shape of the vapor deposition layer is the thickness of the vapor deposition layer, the dimension of the vapor deposition layer seen from a plane, and the like. The mask 50 may be pulled closer to the substrate 110 side using an electrostatic chuck using electrostatic force.

4 is a plan view showing the case where the mask device 15 is viewed from the first surface 551 side. The mask device 15 may include a mask support 40 including a frame 41 and a mask 50 fixed to the frame 41 . The mask device 15 may include two or more masks 50 arranged in the second direction D2. The frame 41 supports the mask 50 in a state in which tension is applied to the mask 50 in order to suppress bending of the mask 50 .

The frame 41 may include a pair of first sides 411 extending in the first direction D1, a pair of second sides 412 extending in the second direction D2, and an opening 43. . The second side 412 may be longer than the first side 411 . The opening 43 is located between the pair of first sides 411 and between the pair of second sides 412 .

The mask 50 may include a first side edge portion 501 and a second side edge portion 502 extending in the first direction D1, and a first end 503 and a second end 504 . The first end 503 and the second end 504 are ends of the mask 50 in the first direction D1.

In plan view, the mask 50 includes a first end 51a, a second end 51b and an intermediate portion 52. The first end 51a and the second end 51b face each other in the first direction D1. The intermediate portion 52 is located between the first end 51a and the second end 51b. The intermediate portion 52 includes a group of through holes 53 .

The first end 51a has a width W01. The width W01 is the dimension of the first end portion 51a in the second direction D2. The width W01 is measured at the boundary between the first end portion 51a and the middle portion 52 . The second end portion 51b has a width W02. The width W02 is the dimension of the second end portion 51b in the second direction D2. The width W02 is measured at the boundary between the second end portion 51b and the middle portion 52. The intermediate portion 52 has a width W03. The width W03 is the dimension of the intermediate portion 52 in the second direction D2. The width W03 is measured at the center C1 of the mask 50.

The width W01 of the first end portion 51a may be the same as the width W03 of the intermediate portion 52, may be larger than the width W03, or may be smaller than the width W03. The width W02 of the second end portion 51b may be the same as the width W03 of the intermediate portion 52, may be larger than the width W03, or may be smaller than the width W03.

"Planar view" means viewing an object along the thickness direction of the mask 50 .

The mask 50 is fixed to the second side 412 . Specifically, the first end portion 51a is fixed to the second side 412 on one side, and the second end portion 51b is fixed to the second side 412 on the other side. The 1st end part 51a and the 2nd end part 51b may be fixed to the 2nd side 412 by welding. The intermediate portion 52 overlaps the opening 43 of the frame 41 in plan view.

5 is a plan view showing an example of the mask 50 . The through-hole group 53 of the intermediate portion 52 includes a plurality of through-holes 56 regularly arranged in plan view. The through holes 56 may be arranged periodically in two directions. For example, the through holes 56 may be arranged periodically in the first direction D1 and the second direction D2.

One group of through holes 53 corresponds to one organic device 100 . For example, the plurality of first organic layers 130A included in one organic device 100 are formed of a deposition material passing through a plurality of through holes 56 of one through hole group 53 . The mask 50 includes at least one group of through holes 53 . The mask 50 may also include two or more groups of through holes 53 arranged in the first direction D1.

The mask 50 has dimensions M11 in the first direction D1. The intermediate portion 52 has dimensions M12 in the first direction D1. The first end 51a has a dimension M13 in the first direction D1. The second end 51b has dimensions M14 in the first direction D1.

In order to increase the size of the substrate 110 of the organic device group 102 shown in Fig. 2, it is required to increase the size M11 of the mask 50. When the size of the mask 50 increases, manufacturing facilities for manufacturing the mask also increase in size. For example, in order to manufacture a mask corresponding to the eighth generation substrate, an exposure mask corresponding to the eighth generation substrate is required. However, in order to enlarge an exposure mask, a huge investment is required.

A method of manufacturing the mask 50 of one sheet is also considered by performing the exposure process twice or more. By this method, the mask 50 having dimensions larger than that of the exposure mask can be manufactured. For this reason, a large-sized mask 50 can be manufactured using an existing exposure mask. On the other hand, when two or more exposure steps are performed, the positional accuracy of the through hole of the mask 50 is lowered. For example, the relative precision between the position of the through hole determined by the exposure process of the first time and the position of the through hole determined by the exposure process of the second time is lowered. This is because the relative position of the exposure mask in the second exposure process to the position of the exposure mask in the first exposure process may deviate from the ideal position.

When performing two or more exposure processes, you may set an exposure process considering that the relative position of an exposure mask shifts|deviates from an ideal position. In this embodiment, it is proposed to form the intermediate portion 52 using one exposure mask, and to form the first end portion 51a and the second end portion 51b using another exposure mask or other method. do. As a result, the dimension M12 of the intermediate portion 52 can be increased compared to the case where the entire mask 50 is formed using a single exposure mask. In addition, the position of the through hole 56 of the intermediate portion 52 can be determined by a single exposure step. For this reason, compared with the case where two or more exposure steps are performed with respect to the intermediate part 52, the positional accuracy of the through hole 56 can be improved.

For example, when the entire mask 50 is formed using an exposure mask of the G6 half generation, the size M11 of the mask 50 is about 1200 mm, and the size M12 of the middle portion 52 is about 900 mm. By forming the intermediate portion 52 using an exposure mask of the G6 half generation, the dimension M12 of the intermediate portion 52 can be made about 1200 mm.

The dimension M12 of the intermediate portion 52 in the first direction D1 is greater than or equal to the dimension G12 of the device region 103 shown in FIG. 2 . Thus, for example, the first organic layer 130A of two or more organic devices 100 arranged in the first direction D1 shown in FIG. 2 can be formed by a vapor deposition method using a single mask 50. there is. In other words, by increasing the dimension M12 of the intermediate portion 52 in the first direction D1, the dimension G12 of the device region 103 can be increased. In this way, the manufacturing cost of the organic device 100 can be reduced.

The dimension M12 of the intermediate portion 52 may be, for example, 900 mm or more, 1100 mm or more, 1200 mm or more, or 2000 mm or more. The dimension M12 may be, for example, 1100 mm or less, 1200 mm or less, 1800 mm or less, 2000 mm or less, or 2200 mm or less. The range of the dimension M12 may be determined by a first group consisting of 900 mm, 1100 mm, 1200 mm, and 2000 mm, and/or a second group consisting of 1100 mm, 1200 mm, 1800 mm, 2000 mm, and 2200 mm. The range of the dimension M12 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension M12 may be determined by any combination of any two of the values included in the first group described above. The range of the dimension M12 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension M12 may be 900 mm or more and 2200 mm or less, 900 mm or more and 2000 mm or less, 900 mm or more and 1800 mm or less, 900 mm or more and 1200 mm or less, 900 mm or more and 1100 mm or less, 1100 mm or more and 2200 mm or less, 1100 mm or more and 2000 mm or less, 1100 mm or more and 1800 mm or less, 1100 mm or more and 1200 mm or less, 1200 mm or more and 2200 mm or less, 1200 mm or more and 2000 mm or less, 1200 mm or more and 1800 mm or less, 1800 mm or more and 2200 mm or less, It may be more than 2000 mm or less, and may be 2000 mm or more and 2200 mm or less.

The size M13 of the first end portion 51a is smaller than the size M12 of the intermediate portion 52 . The ratio of the dimension M13 to the dimension M12 may be, for example, 0.01 or more, 0.02 or more, or 0.05 or more. The ratio of the dimension M13 to the dimension M12 may be, for example, 0.10 or less, 0.20 or less, or 0.30 or less. The range of the ratio of the dimension M13 to the dimension M12 may be determined by the first group consisting of 0.01, 0.02 and 0.05, and/or the second group consisting of 0.10, 0.20 and 0.30. The range of the ratio of the dimension M13 to the dimension M12 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the dimension M13 to the dimension M12 may be determined by any combination of two of the values included in the first group described above. The range of the ratio of the dimension M13 to the dimension M12 may be determined by any combination of two of the values included in the second group described above. For example, the ratio of the dimension M13 to the dimension M12 may be 0.01 or more and 0.30 or less, 0.01 or more and 0.20 or less, 0.01 or more and 0.10 or less, 0.01 or more and 0.05 or less, 0.01 or more and 0.02 or less, or 0.02 0.30 or more, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more 0.30 or less may be sufficient, 0.10 or more and 0.20 or less may be sufficient, and 0.20 or more and 0.30 or less may be sufficient.

Examples of combinations of dimensions M12 and M13 are shown in the table.

The size M14 of the second end portion 51b is smaller than the size M12 of the intermediate portion 52 . As the numerical range of the ratio of the size M14 to the size M12, the above-described numerical range of the ratio of the size M13 to the size M12 can be adopted.

The intermediate portion 52 has dimensions M20 in the second direction D2. The dimension M20 is smaller than the dimension M12. The ratio of the dimension M20 to the dimension M12 may be, for example, 0.01 or more, 0.02 or more, or 0.05 or more. The ratio of the dimension M20 to the dimension M12 may be, for example, 0.10 or less, 0.30 or less, or 0.80 or less. The range of the ratio of the dimension M20 to the dimension M12 may be determined by the first group consisting of 0.01, 0.02 and 0.05, and/or the second group consisting of 0.10, 0.30 and 0.80. The range of the ratio of the dimension M20 to the dimension M12 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the dimension M20 to the dimension M12 may be determined by any combination of two of the values included in the first group described above. The range of the ratio of the dimension M20 to the dimension M12 may be determined by any combination of two of the values included in the second group described above. For example, the ratio of the dimension M20 to the dimension M12 may be 0.01 or more and 0.80 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.01 or more and 0.05 or less, 0.01 or more and 0.02 or less, or 0.02 0.80 or more, 0.02 or more and 0.30 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.80 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.10 or less, 0.10 or more 0.80 or less may be sufficient, 0.10 or more and 0.30 or less may be sufficient, and 0.30 or more and 0.80 or less may be sufficient.

Structural features appearing in the mask 50 produced by the method of the present embodiment will be described in detail with reference to FIGS. 5 and 6 . FIG. 6 is a plan view showing an enlarged first end portion 51a of the mask 50 in FIG. 5 . 5 and 6 show the mask 50 before being fixed to the frame 41 . Plan views of FIGS. 5 and 6 and the like show the mask 50 when viewed from the first surface 551 side.

The outer edge of the mask 50 includes the above-described first side edge portion 501, second side edge portion 502, first end 503, and second end 504. As shown in FIGS. 5 and 6 , the first side edge 501 of the mask 50 includes a first stepped portion 501a located at the boundary between the middle portion 52 and the first end portion 51a. . In other words, the first end portion 51a and the middle portion 52 are distinguished by the first stepped portion 501a as a boundary.

The first stepped portion 501a is displaced in the second direction D2. In the example shown in FIGS. 5 and 6 , when the first stepped portion 501a faces outward in the first direction D1, it is displaced outward in the second direction D2. In other words, the first side edge 501 of the first end portion 51a is located outside the first side edge 501 of the intermediate portion 52 . "Outside" means the side away from the center C1 of the mask 50 in planar view. “Outside in the first direction D1” means a side away from the center C1 of the mask 50 in the first direction D1. “Outside in the second direction D2” means a side away from the center C1 of the mask 50 in the second direction D2. In the following description, "a stepped portion that is displaced outward in the second direction D2 when it faces outward in the first direction D1" is also referred to as an outside stepped portion.

The center C1 of the mask 50 may be defined as an intersection of a first center line C10 extending in the first direction D1 and a second center line C20 extending in the second direction D2.

The 1st center line C10 is a straight line located in the middle of the 1st straight line L1 and the 2nd straight line L2.

The 1st straight line L1 is a straight line which passes through the 1st side edge area|region 54a mentioned later of the intermediate part 52, and extends along the 1st side edge 501. The first straight line L1 is defined as a straight line passing through the first reference point P1 and the second reference point P2. The first reference point P1 is located in a first side edge region 54a of the intermediate portion 52 described below, and is close to the first end portion 51a. The first reference point P1 is located in the first side edge region 54a of the intermediate portion 52 and is a first intermediate mark 58a described later that is closest to the first end portion 51a. The second reference point P2 is located in the first side edge region 54a of the intermediate portion 52 and is close to the second end portion 51b. The second reference point P2 is the first intermediate mark 58a located in the first side edge region 54a of the intermediate portion 52 and closest to the second end portion 51b.

The 2nd straight line L2 is a straight line which passes through the 2nd side edge area|region 54b mentioned later of the middle part 52, and extends along the 2nd side edge 502. The second straight line L2 is defined as a straight line passing through the third reference point P3 and the fourth reference point P4. The third reference point P3 is located in the second side edge region 54b of the intermediate portion 52, which will be described later, and is close to the first end portion 51a. The third reference point P3 is located in the second side edge region 54b of the intermediate portion 52 and is a second intermediate mark 58b described later that is closest to the first end portion 51a. The fourth reference point P4 is located in the second side edge region 54b of the intermediate portion 52 and is close to the second end portion 51b. The fourth reference point P4 is the second intermediate mark 58b located in the second side edge region 54b of the intermediate portion 52 and closest to the second end portion 51b.

The 2nd center line C20 is a straight line located in the middle of the 3rd straight line L3 and the 4th straight line L4.

The third straight line L3 is defined as a straight line passing through the first reference point P1 and the third reference point P3.

The fourth straight line L4 is defined as a straight line passing through the second reference point P2 and the fourth reference point P4.

The straight lines L1 to L4, the center lines C10, C20, and the center C1 are calculated by taking an image of the mask 50 viewed from a plane and analyzing a plurality of coordinates of the points of the intermediate portion 52 based on the image. As the measuring instrument, AMIC-2500 manufactured by Shinto S Precision Co., Ltd. can be used.

The first stepped portion 501a is generated because the forming step of the intermediate portion 52 and the forming step of the first end portion 51a are different. For example, the first stepped portion 501a is caused by a difference between an exposure mask used to form the intermediate portion 52 and an exposure mask used to form the first end portion 51a. An exposure mask used to form the intermediate portion 52 is also referred to as a first exposure mask. An exposure mask used to form the first end portion 51a is also referred to as a second exposure mask. If the position of the second exposure mask relative to the first exposure mask is shifted from the ideal in the second direction D2, a first stepped portion 501a is generated corresponding to the shift amount.

The first stepped portion 501a has a dimension S1 in the second direction D2. Dimension S1 may be, for example, 0.5 μm or more, 2.5 μm or more, 5.0 μm or more, or 10 μm or more. Dimension S1 may be, for example, 50 μm or less, 100 μm or less, 200 μm or less, or 1 mm or less. The range of dimension S1 may be determined by a first group consisting of 0.5 µm, 2.5 µm, 5.0 µm and 10 µm, and/or a second group consisting of 50 µm, 100 µm, 200 µm and 1 mm. The range of dimension S1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of dimension S1 may be determined by any combination of two of the values included in the first group described above. The range of dimension S1 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension S1 may be 0.5 μm or more and 1 mm or less, 0.5 μm or more and 200 μm or less, 0.5 μm or more and 100 μm or less, 0.5 μm or more and 50 μm or less, or 0.5 μm or more and 10 μm or less. 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 2.5 μm or less, 2.5 μm or more and 1 mm or less, 2.5 μm or more and 200 μm or less, 2.5 μm or more and 100 μm or less, 2.5 μm or more 50 ㎛ or less, 2.5 μm or more and 10 μm or less, 2.5 μm or more and 5.0 μm or less, 5.0 μm or more and 1 mm or less, 5.0 μm or more and 200 μm or less, 5.0 μm or more and 100 μm or less, 5.0 μm or more ㎛ or more and 50 μm or less, 5.0 μm or more and 10 μm or less, 10 μm or more and 1 mm or less, 10 μm or more and 200 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less 50 μm or more and 1 mm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1 mm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1 mm or less may be

The dimension S1 is calculated by photographing an image of the mask 50 in a plane view and analyzing the coordinates of points on the first side edge 501 based on the image. As a measuring instrument for calculating the dimension S1, AMIC-2500 manufactured by Shinto S Precision Co., Ltd. can be used.

5 and 6, the 1st end part 51a may also contain the 1st mark 58c. The first mark 58c is formed at the same time as the outer edge of the first end 51a in a first end forming step described later. Therefore, the 1st mark 58c can function as an index of the processing precision in the 1st end forming step.

The first mark 58c is located on the first surface 551 or the second surface 552 . The first mark 58c is, for example, a concave portion formed in the first surface 551 or a concave portion formed in the second surface 552 . The depth of the concave portion may be, for example, 2 μm or more, 3 μm or more, or 5 μm or more. The depth of the concave portion may be, for example, 10 μm or less, 20 μm or less, or 30 μm or less. The depth range of the concave portion may be determined by a first group consisting of 2 µm, 3 µm and 5 µm, and/or a second group consisting of 10 µm, 20 µm and 30 µm. The depth range of the concave portion may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the depth of the concave portion may be determined by any combination of two of the values included in the first group described above. The range of the depth of the concave portion may be determined by any combination of two of the values included in the above-mentioned second group. For example, the depth of the recess may be 2 µm or more and 30 µm or less, 2 µm or more and 20 µm or less, 2 µm or more and 10 µm or less, 2 µm or more and 5 µm or less, or 2 µm or more and 3 µm or less. 3 μm or more and 30 μm or less, 3 μm or more and 20 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 30 μm or less, 5 μm or more It may be 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, or 20 μm or more and 30 μm or less.

The first mark 58c may be a through hole penetrating from the first surface 551 to the second surface 552 .

The dimension of the first mark 58c in plan view may be larger than the dimension r of the penetrating portion 564 of the through hole 56 . The ratio of the dimension r of the penetrating portion 564 to the dimension r of the first mark 58c in plan view may be, for example, 1.03 or more, 2.0 or more, or 5.0 or more. The ratio of the dimension r of the penetrating portion 564 to the dimension r of the first mark 58c in plan view may be, for example, 5.0 or less, 10 or less, or 50 or less. The range of the ratio of the dimension of the first mark 58c in plan view to the dimension r of the penetrating portion 564 is the first group consisting of 1.03, 2.0 and 5.0, and/or the second group consisting of 5.0, 10 and 50. It may be determined by 2 groups. The range of the ratio of the dimension of the first mark 58c in plan view to the dimension r of the penetrating portion 564 is any one of the values included in the first group described above and included in the second group described above. It may be determined by any combination of any one of the values. The range of the ratio of the dimension r of the penetrating portion 564 to the dimension r of the first mark 58c in plan view may be determined by any combination of any two of the values included in the first group described above. The range of the ratio of the dimension of the first mark 58c in plan view to the dimension r of the penetrating portion 564 may be determined by any combination of any two of the values included in the second group described above. For example, the ratio of the dimension r of the through portion 564 to the dimension r of the first mark 58c in plan view may be 1.03 or more and 50 or less, 1.03 or more and 10 or less, or 1.03 or more and 5.0 or less. , 1.03 or more and 5.0 or less, 1.03 or more and 2.0 or less, 2.0 or more and 50 or less, 2.0 or more and 10 or less, 2.0 or more and 5.0 or less, 2.0 or more and 5.0 or less, 5.0 or more and 50 or less, It may be 5.0 or more and 10 or less, 5.0 or more and 50 or less, 5.0 or more and 10 or less, or 10 or more and 50 or less.

The 1st mark 58c may be located in the 1st side edge area|region 54a. The first side edge region 54a is a region on the side of the first side edge 501 rather than the through hole group 53 in the second direction D2. The first side edge region 54a spans the first end portion 51a, the middle portion 52 and the second end portion 51b, and spreads along the first side edge portion 501 .

5 and 6, the intermediate part 52 may include the 1st intermediate mark 58a located in the 1st side edge area|region 54a. The intermediate portion 52 may include two or more first intermediate marks 58a arranged along the first direction D1. The first intermediate mark 58a is formed simultaneously with the outer periphery of the intermediate portion 52 in the intermediate portion forming step described later.

Like the first mark 58c, the first intermediate mark 58a is located on the first surface 551 or the second surface 552. Like the first mark 58c, the first intermediate mark 58a may be a concave portion formed in the first surface 551 or a concave portion formed in the second surface 552, or may be a through hole. may be continued

As the numerical range of the size of the first intermediate mark 58a, the above-described numerical range of the size of the first mark 58c can be adopted.

As shown in FIG. 6, the intermediate part 52 may be designed so that two or more 1st intermediate marks 58a may be located on the 1st straight line L1. The 1st straight line L1 may be drawn as an approximate straight line of two or more 1st intermediate marks 58a. In this case, the displacement amount of the position of the 1st intermediate mark 58a with respect to the 1st straight line L1, the 1st mark 58c becomes an index of the processing precision in the intermediate part formation step. For example, if the processing precision in the intermediate|middle part formation step is high, the some 1st intermediate mark 58a overlaps with the 1st straight line L1 correctly. When the processing precision in the intermediate portion forming step is low, the displacement of the position of the first intermediate mark 58a with respect to the first straight line L1 becomes large.

As shown in FIG. 6, the distance G1 between the 1st mark 58c in the 2nd direction D2 and the 1st straight line L1 may be computed. The distance G1 can function as an index of processing accuracy in the first end forming step. For example, when the relative position of the second exposure mask with respect to the first exposure mask deviates from the ideal in the second direction D2, the distance G1 deviates from the ideal value. When the first end portion 51a is designed such that the first mark 58c is located on the first straight line L1, the ideal value of the distance G1 is zero. In this case, the distance G1 can function as an index of displacement of the relative position of the first end portion 51a with respect to the middle portion 52 . The distance G1 is, for example, 1 mm or less, 200 μm or less, 100 μm or less, 50 μm or less, 20 μm or less, 10 μm or less, 5.0 μm or less, or 3.0 μm or less. may be

You may evaluate the processing precision in the 1st end part formation step based on the coordinates of the 1st mark 58c at the time of using the center C1 as a reference|standard. For example, if the relative position of the second exposure mask with respect to the first exposure mask is deviated from the ideal in the second direction D2, the coordinates of the first mark 58c are deviated from the ideal coordinates in the second direction.

In FIG. 6 , symbol S3 indicates the distance from the first stepped portion 501a to the group of through holes 53 in the first direction D1. The distance S3 may be, for example, 100 μm or more, 300 μm or more, 1 mm or more, or 3 mm or more. The distance S3 may be, for example, 10 mm or less, 30 mm or less, 100 mm or less, or 200 mm or less. The range of the distance S3 may be determined by a first group consisting of 100 µm, 300 µm, 1 mm, and 3 mm, and/or a second group consisting of 10 mm, 30 mm, 100 mm, and 200 mm. The range of the distance S3 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the distance S3 may be determined by any combination of two of the values included in the first group described above. The range of the distance S3 may be determined by any combination of two of the values included in the second group described above. For example, the distance S3 may be 100 μm or more and 200 mm or less, 100 μm or more and 100 mm or less, 100 μm or more and 30 mm or less, 100 μm or more and 10 mm or less, 100 μm or more and 3 mm or less, or 100 μm. 1 mm or more, 100 μm or more and 300 μm or less, 300 μm or more and 200 mm or less, 300 μm or more and 100 mm or less, 300 μm or more and 30 mm or less, 300 μm or more and 10 mm or less, 300 μm or more 3 mm or less, 300 μm or more and 1 mm or less, 1 mm or more and 200 mm or less, 1 mm or more and 100 mm or less, 1 mm or more and 30 mm or less, 1 mm or more and 10 mm or less, 1 mm or more and 3 mm or less, 3 mm or more 200 mm or less, 3 mm or more and 100 mm or less, 3 mm or more and 30 mm or less, 3 mm or more and 10 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 30 mm or less, 30 mm or more 200 mm It may be less than, 30 mm or more and 100 mm or less may be sufficient, and 100 mm or more and 200 mm or less may be sufficient.

In FIG. 6 , symbol S5 represents the minimum value of the distance from the first stepped portion 501a to the first intermediate mark 58a in the first direction D1. The minimum value S5 may be, for example, 100 μm or more, 300 μm or more, or 1 mm or more. The minimum value S5 may be, for example, 2 mm or less, 3 mm or less, or 5 mm or less. The range of the minimum value S5 may be determined by the first group consisting of 100 µm, 300 µm and 1 mm, and/or the second group consisting of 2 mm, 3 mm and 5 mm. The range of the minimum value S5 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the minimum value S5 may be determined by any combination of two of the values included in the first group described above. The range of the minimum value S5 may be determined by any combination of two of the values included in the second group described above. For example, the minimum value S5 may be 100 μm or more and 5 mm or less, 100 μm or more and 3 mm or less, 100 μm or more and 2 mm or less, 100 μm or more and 1 mm or less, 100 μm or more and 300 μm or less, or 300 ㎛ or more and 5 mm or less, 300 μm or more and 3 mm or less, 300 μm or more and 2 mm or less, 300 μm or more and 1 mm or less, 1 mm or more and 5 mm or less, 1 mm or more and 3 mm or less, 1 mm or more and 2 mm or less 2 mm or more and 5 mm or less may be sufficient, 2 mm or more and 3 mm or less may be sufficient, and 3 mm or more and 5 mm or less may be sufficient.

5 and 6, the second side edge 502 of the mask 50 includes a second stepped portion 502a located at the boundary between the middle portion 52 and the first end portion 51a, There may be. The second stepped portion 502a is displaced in the second direction D2, similarly to the first stepped portion 501a. In the example shown in FIGS. 5 and 6 , when the second stepped portion 502a faces outward in the first direction D1, it displaces inward in the second direction D2. In other words, the second side edge portion 502 of the first end portion 51a is located inside the second side edge portion 502 of the intermediate portion 52 . "Inner side" means the side approaching the center of the mask 50. “Inside in the first direction D1” means a side closer to the center of the mask 50 in the first direction D1. “Inside in the second direction D2” means a side closer to the center of the mask 50 in the second direction D2. In the following description, "a step portion that is displaced inward in the second direction D2 when it faces outward in the first direction D1" is also referred to as an inside step portion. The inner stepped portion is preferably positioned outside the through hole group 53 in the second direction D2.

Similar to the first stepped portion 501a, the second stepped portion 502a is also generated because the forming step of the intermediate portion 52 and the forming step of the first end portion 51a are different. The second stepped portion 502a has a dimension S2 in the second direction D2. As the numerical range of the dimension S2, the numerical range of the dimension S1 described above can be adopted.

5 and 6, the 1st end part 51a may also contain the 2nd mark 58d located in the 2nd side edge area|region 54b. The second side edge region 54b is a region on the second side edge 502 side rather than the through hole group 53 in the second direction D2. The second side edge region 54b spans the first end portion 51a, the middle portion 52 and the second end portion 51b, and spreads along the second side edge portion 502 .

Similar to the first mark 58c, the second mark 58d is formed simultaneously with the outer periphery of the first end 51a in a first end forming step described later. Like the first mark 58c, the second mark 58d is located on the first surface 551 or the second surface 552. Like the first mark 58c, the second mark 58d may be a concave formed in the first surface 551, or may be a concave formed in the second surface 552, or may be a through hole. do. As the numerical range of the size of the second mark 58d, the above-described numerical range of the size of the first mark 58c can be adopted.

5 and 6, the middle part 52 may include the 2nd intermediate mark 58b located in the 2nd side edge area|region 54b. The intermediate portion 52 may include two or more second intermediate marks 58b arranged along the first direction D1. Similar to the first intermediate mark 58a, the second intermediate mark 58b is formed simultaneously with the outer periphery of the intermediate portion 52 in an intermediate portion forming step described later.

Like the first mark 58c, the second intermediate mark 58b is located on the first surface 551 or the second surface 552. Like the first mark 58c, the second intermediate mark 58b may be a concave portion formed in the first surface 551 or a concave portion formed in the second surface 552, or may be a through hole. may be continued As the numerical range of the size of the second intermediate mark 58b, the above-described numerical range of the size of the first mark 58c can be adopted.

As shown in FIG. 6, the intermediate part 52 may be designed so that two or more 2nd intermediate mark 58b may be located on the 2nd straight line L2. The 2nd straight line L2 may be drawn as an approximation straight line of two or more 2nd intermediate mark 58b.

As shown in FIG. 6, the distance G2 between the 2nd mark 58d in the 2nd direction D2 and the 2nd straight line L2 may be computed. When the first end 51a is designed so that the second mark 58d is located on the second straight line L2, the ideal value of the distance G2 is zero. The distance G2 may be, for example, 1 mm or less, 200 μm or less, 100 μm or less, 50 μm or less, 20 μm or less, 10 μm or less, or 5 μm or less.

In FIG. 6 , symbol S4 indicates the distance from the second stepped portion 502a to the group of through holes 53 in the first direction D1. As the numerical range of the distance S4, the above-mentioned numerical range of the distance S3 can be adopted.

In Fig. 6, symbol S6 represents the minimum value of the distance from the second stepped portion 502a to the second intermediate mark 58b in the first direction D1. As the numerical range of the minimum value S6, the above-mentioned numerical range of the minimum value S5 can be adopted.

As shown in FIG. 5 , the first side edge portion 501 may include a first stepped portion 501a located at the boundary between the middle portion 52 and the second end portion 51b. The second side edge portion 502 may also include a second stepped portion 502a located at the boundary between the middle portion 52 and the second end portion 51b. In the example shown in FIG. 5 , the first stepped portion 501a located at the boundary between the middle portion 52 and the second end portion 51b is an outer stepped portion, and the middle portion 52 and the second end portion 51b The second stepped portion 502a located at the boundary of is an inner stepped portion.

The configuration of the first step portion 501a and the second step portion 502a located at the boundary between the middle portion 52 and the second end portion 51b is the boundary between the middle portion 52 and the first end portion 51a. Since it is the same as the configuration of the first step portion 501a and the second step portion 502a located at , a detailed description thereof will be omitted.

As shown in FIG. 5, the 2nd end part 51b may also contain the 1st mark 58c located in the 1st side edge area|region 54a. The second end portion 51b may also include a second mark 58d located in the second side edge region 54b.

Since the structure of the 1st mark 58c and the 2nd mark 58d of the 2nd end part 51b is the same as the structure of the 1st mark 58c and the 2nd mark 58d of the 1st end part 51a, A detailed description is omitted.

Next, the cross-sectional structure of the mask 50 will be described. Fig. 7 is a cross-sectional view of the mask 50 of Fig. 6 viewed from the A-A direction.

The mask 50 includes a substrate 55 and a through hole 56 penetrating the substrate 55 . Substrate 55 includes a first side 551 and a second side 552 . The through hole 56 penetrates the substrate 55 from the first surface 551 to the second surface 552 .

The through hole 56 may also include a first concave portion 561, a second concave portion 562, and a connecting portion 563 connecting the first concave portion 561 and the second concave portion 562. . The first concave portion 561 is located on the first surface 551 and is concave toward the second surface 552 . The second concave portion 562 is a concave portion located on the second surface 552 and concave toward the first surface 551 . By connecting the first concave portion 561 and the second concave portion 562 , a through hole 56 penetrating the substrate 55 is formed. The first concave portion 561 is formed by processing the substrate 55 from the first surface 551 side by etching, laser, or the like. The second concave portion 562 is formed by processing the substrate 55 from the second surface 552 side by etching, laser, or the like.

The first concave portion 561 has a dimension r1 in plan view. The second concave portion 562 has a dimension r2 in plan view. Dimension r2 may be larger than dimension r1. For example, the outline of the 2nd concave part 562 may surround the outline of the 1st concave part 561 in planar view.

The connecting portion 563 may have a continuous outline over one circumference. The connecting portion 563 may be located between the first surface 551 and the second surface 552 . The connecting portion 563 may define a penetrating portion 564 in which the opening area of the through hole 56 is minimized in plan view of the mask 50 .

The dimension r of the penetrating portion 564 may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. Also, the dimension r of the penetrating portion 564 may be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 is determined by the first group consisting of 10 μm, 15 μm, 20 μm and 25 μm, and/or the second group consisting of 40 μm, 45 μm, 50 μm and 55 μm. may be determined The range of the dimension r of the penetrating portion 564 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension r of the penetrating portion 564 may be determined by any combination of two of the values included in the first group described above. The range of the dimension r of the penetrating portion 564 may be determined by any combination of two of the values included in the second group described above. For example, the dimension r of the penetrating portion 564 may be 10 μm or more and 55 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 45 μm or less, or 10 μm or more and 40 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 55 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 45 μm 15 μm or more and 40 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 55 μm or less, 20 μm or more and 50 μm or less, 20 μm or more ㎛ or more and 45 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 55 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 45 μm or less 25 μm or more and 40 μm or less, 40 μm or more and 55 μm or less, 40 μm or more and 50 μm or less, 40 μm or more and 45 μm or less, 45 μm or more and 55 μm or less, 45 μm It may be greater than or equal to 50 μm, and may be greater than or equal to 50 μm and less than or equal to 55 μm.

A dimension r of the penetrating portion 564 may be determined by light passing through the through hole 56 . Specifically, parallel light is incident on one of the first surface 551 or the second surface 552 of the mask 50 along the normal direction of the mask 50, and is transmitted through the through hole 56 to transmit the first surface. The surface 551 or the other side of the second surface 552 is emitted. The size of the area occupied by the emitted light in the surface direction of the mask 50 is adopted as the size r of the penetrating portion 564 .

In FIG. 7, although the example in which the 2nd surface 552 of the base material 55 remains between two adjacent 2nd recessed parts 562 was shown, it is not limited to this. Although not shown, etching may be performed so that two adjacent second concave portions 562 are connected. That is, a place where the second surface 552 of the substrate 55 does not remain may exist between the two adjacent second concave portions 562 .

As shown in FIG. 7 , the first end 503 may also include a concave portion formed on the surface of the substrate 55 similarly to the through hole 56 . In the example shown in FIG. 7 , the first end 503 includes a third concave portion 571 located on the first surface 551 and a fourth concave portion 572 located on the second surface 552. include Like the first concave portion 561 and the second concave portion 562, the third concave portion 571 and the fourth concave portion 572 are formed by processing the substrate 55 by etching, laser, or the like.

Although not shown, the first end 503 includes a fourth concave portion 572 located on the second surface 552, but includes a third concave portion 571 located on the first surface 551. You don't have to. In this case, the first end 503 is formed by processing the substrate 55 from the second surface 552 side by etching or the like so that the fourth concave portion 572 reaches the first surface 551 .

Although not shown, the outer edges of the first side edge 501, the second side edge 502, the second end 504, and the like, and the concave portion formed on the surface of the substrate 55 similarly to the first end 503 may include

Materials of the mask 50 and the frame 41 will be described. As a main material of the mask 50 and the frame 41, an iron alloy containing nickel can be used. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the substrate 55 of the mask 50, the total content of nickel and cobalt is 28% by mass or more and 54% by mass or less, and the content of cobalt is 0% by mass or more and 6% by mass or less. Iron alloys may be used. Thereby, the difference between the thermal expansion coefficient of the mask 50 and the frame 41 and the thermal expansion coefficient of the substrate 110 made of glass can be reduced. Therefore, it is possible to suppress a decrease in the dimensional accuracy and positional accuracy of the deposition layer formed on the substrate 110 due to thermal expansion of the mask 50 , frame 41 , substrate 110 and the like.

The content of nickel and cobalt in the substrate 55 may be 28% by mass or more and 38% by mass or less in total. In this case, specific examples of the iron alloy containing nickel or nickel and cobalt include an invar material, a super invar material, and an ultra invar material. An invar material is an iron alloy containing 34 mass % or more and 38 mass % or less of nickel, remainder iron, and unavoidable impurities. The super invar material is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, the balance of iron and unavoidable impurities. The ultra-invar material is 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, and 0.10% by mass or less of silicon , It is an iron alloy containing 0.01% by mass or less of carbon, the balance of which is iron, and unavoidable impurities.

The content of nickel and cobalt in the mask 50 may be 38% by mass or more and 54% by mass or less in total. For example, the mask 50 may be made of an iron alloy containing 38% by mass or more and 54% by mass or less of nickel, the balance of which is iron, and unavoidable impurities. Such a mask 50 may be manufactured by a plating method.

Also, when the temperature of the mask 50, the frame 41, and the substrate 110 does not reach a high temperature during the deposition process, the thermal expansion coefficient of the mask 50 and the frame 41 is reduced to that of the substrate 110. It is not particularly necessary to set it as a value equal to the thermal expansion coefficient. In this case, as a material constituting the mask 50, you may use materials other than the iron alloy mentioned above. For example, you may use iron alloys other than the iron alloy containing nickel mentioned above, such as iron alloy containing chromium. As the iron alloy containing chromium, for example, an iron alloy called stainless steel can be used. Moreover, you may use alloys other than an iron alloy, such as nickel and a nickel-cobalt alloy.

The thickness T of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. In addition, the thickness T may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T may be determined by a first group consisting of 8 µm, 10 µm, 13 µm and 15 µm, and/or a second group consisting of 20 µm, 30 µm, 40 µm and 50 µm. The range of the thickness T may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness T may be determined by any combination of two of the values included in the first group described above. The range of the thickness T may be determined by any combination of two of the values included in the above-described second group. For example, the thickness T may be 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, or 8 μm or more and 15 μm or less. 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more 20 μm or more, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 50 μm or less, 13 μm or more and 40 μm or less, 13 μm or more and 30 μm or less 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less , 40 μm or more and 50 μm or less may be sufficient.

By setting the thickness T to 50 μm or less, the ratio of the evaporation material 7 caught on the wall surface of the through hole 56 before passing through the through hole 56 among the evaporation materials 7 can be reduced. Thereby, utilization efficiency of the evaporation material 7 can be improved. In addition, by setting the thickness T to 8 μm or more, the strength of the mask 50 can be ensured, and damage or deformation of the mask 50 can be suppressed.

As a method for measuring the thickness T, a contact-type measuring method is employed. As a contact-type measuring method, "MT1271" of length gauge HEIDENHAIM-METRO, which is equipped with a plunger of the ball-bush guide type and made by Heidenheim, is used.

Next, a method for manufacturing the mask 50 will be described. First, a base material is prepared. The base material may be prepared in a form in which a base material extending in the first direction D1 is wound around a roll. In this case, the substrate unwound from the roll is transported toward an exposure device, a developing device, an etching device, and the like. The substrate is transported intermittently whenever processing in an exposure apparatus, a developing apparatus, an etching apparatus, or the like is completed.

Subsequently, the mask 50 is manufactured by processing the substrate. A plurality of masks 50 are fabricated from one substrate. For example, a plurality of masks 50 are manufactured from a roll of substrate. In the following description, the substrate used to manufacture the mask 50 is referred to as an original substrate and is denoted by reference numeral 55A.

The manufacturing method of the mask 50 has an intermediate part forming step, a 1st end forming step, and a 2nd end forming step. In the intermediate portion forming step, the through hole 56 and the outer edge of the intermediate portion 52 are formed in the original substrate 55A. In the intermediate portion forming step, intermediate marks 58a and 58b may be formed on the original substrate 55A. In the first end forming step, the marks 58c and 58d and the periphery of the first end 51a are formed on the original substrate 55A. In the second end forming step, the marks 58c and 58d and the periphery of the second end 51b are formed on the original substrate 55A.

The intermediate portion formation step includes a resist layer formation process, a first exposure process, a development process, an etching process, and a resist removal process.

The first end forming step includes a resist layer forming process, a second exposure process, a developing process, an etching process, and a resist removal process.

The second end forming step includes a resist layer forming process, a third exposure process, a developing process, an etching process, and a resist removal process.

The resist layer formation process, the development process, the etching process, and the resist removal process may be processes common to the intermediate portion formation step, the first end portion formation step, and the second end portion formation step. For example, in the resist layer formation process, a resist layer may be simultaneously provided in regions of the original base material 55A corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b. The developing process, the etching process, and the resist removal process simultaneously process the resist layer located in the regions of the original substrate 55A corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b, respectively. can also

The second exposure process and the third exposure process are performed at different timings from the first exposure process. The second exposure process and the third exposure process may be performed at the same timing or at different timings.

After preparing the original substrate 55A, a resist layer forming process is performed. In the resist layer formation process, as shown in FIG. 8 , a resist layer is provided on the surface of the original substrate 55 . The resist layer may include a first resist layer 61 positioned on the first surface 551 and a second resist layer 62 positioned on the second surface 552 .

8, in a cross-sectional view for explaining the manufacturing process of the mask 50, the region of the original substrate 55 on which the first end portion 51a is formed and the original substrate on which the intermediate portion 52 is formed ( 55A), a dashed-dotted line is drawn at the boundary between the regions.

The resist layer may be a layer formed by applying a solution containing a resist material to the surface of the original substrate 55A and solidifying it. Alternatively, the resist layer may be a layer formed by sticking a film such as dry film on the surface of the original substrate 55A.

The coating type resist layer is formed by applying a solution containing a photosensitive material to the surface of the original substrate 55A and solidifying it. At this time, a resist layer baking process of baking the resist layer may be performed. The photosensitive material may be of a photolysis type, so-called positive type, or a photocuring type, so-called negative type.

As an example of a positive type photosensitive material, novolak-type positive resists, such as SC500, etc. are mentioned. Examples of negative photosensitive materials include casein resist and the like.

The thickness of the resist layer may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The thickness of the resist layer may be, for example, 5 μm or less, 7 μm or less, or 10 μm or less. The range of the thickness of the resist layer may be determined by the first group consisting of 1 µm, 2 µm and 3 µm, and/or the second group consisting of 5 µm, 7 µm and 10 µm. The range of the thickness of the resist layer may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness of the resist layer may be determined by any combination of two of the values included in the first group described above. The range of the thickness of the resist layer may be determined by any combination of two of the values included in the above-mentioned second group. For example, the thickness of the resist layer may be 1 µm or more and 10 µm or less, 1 µm or more and 7 µm or less, 1 µm or more and 5 µm or less, 1 µm or more and 3 µm or less, or 1 µm or more 2 µm or more. ㎛ or less, 2 μm or more and 10 μm or less, 2 μm or more and 7 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 10 μm or less, It may be 3 μm or more and 7 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 7 μm or less, or 7 μm or more and 10 μm or less.

Subsequently, the first exposure process is performed. A 1st exposure process exposes the resist layer on the original base material 55A using a 1st exposure mask, as shown to FIG. 9A and FIG. 9B. The first exposure mask exposes the resist layer located in the region corresponding to the intermediate portion 52 . The first exposure mask includes a first surface first exposure mask 711 exposing the first resist layer 61 and a second surface first exposure mask 712 exposing the second resist layer 62. You can do it.

As shown in FIG. 9A, the 1st exposure mask may have a rectangle containing a 1st side and a 2nd side. The first side may extend in the direction in which the original substrate 55A is conveyed. The second side may extend in a direction orthogonal to the direction in which the original substrate 55A is conveyed. The dimension of the first side is also referred to as length, and is denoted by the symbol Y1. The dimension of the second side is also referred to as width, and is denoted by the symbol W1. The conveying direction of the original substrate 55A may be parallel to the first direction D1 of the mask 50 .

The width W1 of the first exposure mask may be larger than the width W0 of the original substrate 55A. Width W0 is the dimension of 55 A of original base materials in the direction orthogonal to the direction in which 55 A of original base materials are conveyed.

The width W0 of the original substrate 55A is determined in consideration of availability of the first exposure mask, for example. The width W0 may be, for example, 100 mm or more, 200 mm or more, or 400 mm or more. The width W0 may be, for example, 600 mm or less, 800 mm or less, or 1000 mm or less. The range of the width W0 may be determined by a first group consisting of 100 mm, 200 mm and 400 mm, and/or a second group consisting of 600 mm, 800 mm and 1000 mm. The range of the width W0 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the width W0 may be determined by any combination of any two of the values included in the first group described above. The range of the width W0 may be determined by any combination of any two of the values included in the second group described above. For example, the width W0 may be 100 mm or more and 1000 mm or less, 100 mm or more and 800 mm or less, 100 mm or more and 600 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 1000 mm or less, 200 mm or more and 800 mm or less, 200 mm or more and 600 mm or less, 200 mm or more and 400 mm or less, 400 mm or more and 1000 mm or less, 400 mm or more and 800 mm or less, 400 mm or more and 600 mm or less, 600 mm or more and 1000 mm or less, 600 mm It may be more than 800 mm or less, and may be 800 mm or more and 1000 mm or less.

The width W1 of the first exposure mask may be, for example, 400 mm or more, 600 mm or more, 800 mm or more, or 1100 mm or more. The width W1 may be, for example, 600 mm or less, 1000 mm or less, 1100 mm or less, or 1400 mm or less. The range of the width W1 may be determined by a first group consisting of 400 mm, 600 mm, 800 mm, and 1100 mm, and/or a second group consisting of 600 mm, 1000 mm, 1100 mm, and 1400 mm. The range of the width W1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the width W1 may be determined by any combination of two of the values included in the first group described above. The range of the width W1 may be determined by any combination of two of the values included in the second group described above. For example, the width W1 may be 400 mm or more and 1400 mm or less, 400 mm or more and 1100 mm or less, 400 mm or more and 1000 mm or less, 400 mm or more and 800 mm or less, 400 mm or more and 600 mm or less, 600 mm or more and 1400 mm or less, 600 mm or more and 1100 mm or less, 600 mm or more and 1000 mm or less, 600 mm or more and 800 mm or less, 800 mm or more and 1400 mm or less, 800 mm or more and 1100 mm or less, 800 mm or more and 1000 mm or less, 1000 mm or more and 1400 mm or less, 1000 mm It may be more than 1100 mm or less, and may be 1100 mm or more and 1400 mm or less.

A 1st exposure mask has length Y1. Length Y1 is the dimension of the 1st exposure mask in the direction in which the original base material 55A is conveyed. The length Y1 may be larger or smaller than the width W1. The length Y1 corresponds to the dimension M12 of the middle portion 52 of the mask 50 . As the numerical range of the length Y1, the above-mentioned numerical range of the dimension M12 can be adopted.

10A and 10B are a plan view and a cross-sectional view showing an example of a resist layer exposed with a first exposure mask. The exposed first resist layer 61 includes a first developing layer 61a. The first developing layer 61a is a portion of the first resist layer 61 that is removed by being developed. When the first resist layer 61 includes a positive photoresist, a portion irradiated with exposure light becomes the first developing layer 61a. When the first resist layer 61 includes a negative photosensitive material, the portion not irradiated with exposure light becomes the first developing layer 61a and is removed in the developing process.

Like the first resist layer 61, the second resist layer 62 includes a second developing layer 62a. The second developed layer 62a is the portion of the second resist layer 62 that is removed by being developed. When the second resist layer 62 includes a positive photoresist, a portion irradiated with exposure light becomes the second developing layer 62a. When the second resist layer 62 includes a negative photosensitive material, the portion not irradiated with exposure light becomes the second developing layer 62a and is removed in the developing process.

As shown in FIG. 10A, the second developed layer 62a generated by the first exposure process corresponds to the outer periphery of the intermediate portion 52, the through hole 56, and the intermediate marks 58a and 58b. It is located in the region of the resist layer 62 . Although not shown, the first developed layer 61a generated by the first exposure process is also a first resist layer corresponding to the periphery of the intermediate portion 52, the through hole 56, and the intermediate marks 58a and 58b. It is located in the area of (61).

Subsequently, the second exposure process is performed. The 2nd exposure process exposes the resist layer on the original base material 55A using a 2nd exposure mask, as shown to FIG. 11A and FIG. 11B. The second exposure mask exposes the resist layer located in the region corresponding to the first end portion 51a. The second exposure mask includes a first surface second exposure mask 721 exposing the first resist layer 61 and a second exposure mask 722 exposing the second resist layer 62. You can do it.

In the second exposure process, the position alignment of the second exposure mask with respect to the original substrate 55A may be performed by moving the second exposure mask using a driving device. The driving device is configured to precisely adjust the position of the exposure mask. For example, the driving device may include a microactuator. Microactuators may include electrostatic actuators, electromagnetic actuators, piezoelectric actuators, thermal expansion actuators, and the like.

In the second exposure process, the position of the second exposure mask may be adjusted with the first developing layer 61a corresponding to the alignment mark generated in the first exposure process as a reference. For example, the position alignment of the second exposure mask may be performed so that the first developing layer 61a corresponding to the alignment mark and the alignment mark of the second exposure mask coincide. The position of the first developing layer 61a corresponding to the alignment mark and the position of the alignment mark of the second exposure mask may be calculated by processing an image photographed by a camera. The resolution of the image processing may be, for example, 0.5 μm or less, 0.3 μm or less, or 0.1 μm or less.

In the second exposure process, the position of the second exposure mask may be adjusted with the second developing layer 62a corresponding to the alignment mark generated in the first exposure process as a reference. For example, the second exposure mask may be aligned so that the second developing layer 62a corresponding to the alignment mark coincides with the alignment mark of the second exposure mask. The position of the second developing layer 62a corresponding to the alignment mark and the position of the alignment mark of the second exposure mask may be calculated by processing an image photographed by a camera. The resolution of the image processing may be, for example, 0.5 μm or less, 0.3 μm or less, or 0.1 μm or less.

One or two or more first intermediate marks 58a may function as alignment marks. One or two or more second intermediate marks 58b may function as alignment marks. One or two or more first marks 58c may function as alignment marks. One or two or more second marks 58d may function as alignment marks. A combination of two or more types of these four types of marks may function as an alignment mark.

When the first resist layer 61 includes a positive photosensitive material, a portion not irradiated with exposure light becomes the first remaining layer. When the first resist layer 61 includes a negative photoresist, a portion irradiated with exposure light becomes the first remaining layer. In the second exposure process, the position of the second exposure mask may be adjusted based on the outline of the first remaining layer or the like.

Similar to the first developed layer 61a, the shape of the second developed layer 62a may be identified based on the difference between the second developed layer 62a and the second residual layer. The second residual layer is the portion of the second resist layer 62 that remains after the development process. In the second exposure process, the position of the second exposure mask may be adjusted based on the outline of the second residual layer or the like.

Further, a third exposure process is performed. The third exposure process exposes the resist layer on the original substrate 55A using a third exposure mask. The third exposure mask exposes the resist layer located in the region corresponding to the second end portion 51b. The third exposure mask includes a first surface third exposure mask (not shown) for exposing the first resist layer 61 and a second surface third exposure mask 732 for exposing the second resist layer 62. may include

Also in the 3rd exposure process, position alignment of the 3rd exposure mask with respect to the original base material 55A may be performed by moving a 3rd exposure mask using the drive apparatus mentioned above.

12A and 12B are a plan view and a cross-sectional view showing an example of a resist layer exposed by a second exposure mask and a third exposure mask.

As shown in FIG. 12A, the second developed layer 62a generated by the second exposure process is the outer edge of the first end portion 51a and the second resist layer 62 corresponding to the marks 58c and 58d. located in the area Although not shown, the first developed layer 61a generated by the second exposure process is formed on the periphery of the first end portion 51a and in the regions of the first resist layer 61 corresponding to the marks 58c and 58d. Located.

As shown in FIG. 12A, the second developed layer 62a generated by the third exposure process is the outer edge of the second end portion 51b and the second resist layer 62 corresponding to the marks 58c and 58d. located in the area Although not shown, the first developed layer 61a generated by the third exposure process is formed on the periphery of the second end portion 51b and in the regions of the first resist layer 61 corresponding to the marks 58c and 58d. Located.

Subsequently, the developing process is performed. As a result, the first developed layer 61a and the second developed layer 62a are removed.

Subsequently, an etching process is performed. The etching process etches the original substrate 55 using the exposed and developed first resist layer 61 and second resist layer 62 . The etching process may include a first surface etching process of etching the first surface 551 and a second surface etching process of etching the second surface 552 . As the etchant, for example, a liquid containing a ferric chloride solution and hydrochloric acid can be used.

13 is a cross-sectional view showing an example of an etched original substrate 55 . A first concave portion 561 and a third concave portion 571 are formed in the first surface 551 by the first surface etching process. A second concave portion 562 and a fourth concave portion 572 are formed in the second surface 552 by the second surface etching process. By connecting the first concave portion 561 and the second concave portion 562, the through hole 56 is formed. By connecting the third concave portion 571 and the fourth concave portion 572, a through hole is formed. A through hole that defines and forms the outer edge of the mask 50 constituted by the third concave portion 571 and the fourth concave portion 572 is also referred to as an outer peripheral hole. An outer hole defining the outer edge of the first end portion 51a is also referred to as a second outer hole, and is denoted by reference numeral 592 . The outer edge hole which defines and forms the outer edge of the middle part 52 is also called a 1st outer edge hole. An outer edge hole defining and forming the outer edge of the second end portion 51b is also referred to as a third outer edge hole. Although not shown, the first intermediate mark 58a, the second intermediate mark 58b, the first mark 58c and the second mark 58d are also formed by an etching process.

As shown in FIG. 13 , after the first surface etching process and before the second surface etching process, the first concave portion 561 and the third concave portion 571 may be filled with the resin 65 .

Subsequently, a resist layer removal process is performed. In this way, the first resist layer 61 and the second resist layer 62 are removed. Further, a process of removing the resin 65 is performed. The resin 65 may be removed simultaneously with the first resist layer 61 and the second resist layer 62 .

14A and 14B are plan and cross-sectional views showing the original substrate 55A after the first resist layer 61 and the second resist layer 62 have been removed. The original base material 55A includes a through hole group 53 including a through hole 56, an outer hole defining an outer edge of the mask 50, and marks 58a, 58b, 58c, and 58d. . As shown in FIG. 14A , the outer holes include a first outer hole 591 defining the outer edge of the middle portion 52 and a second outer hole 592 defining the outer edge of the first end portion 51a. and a third outer hole 593 defining and forming an outer edge of the second end portion 51b.

As shown in FIG. 14A , a bridge 595 may be connected to the outer edge of the mask 50 . In the example shown in FIG. 14A , a bridge 595 is connected to a first end 503 and a second end 504 .

The bridge 595 is the portion of the original substrate 55A that crosses the peripheral aperture. A bridge 595 connects the periphery of the mask 50 to the surrounding original substrate 55A. By providing the bridge 595, detachment of the mask 50 from the original substrate 55A can be suppressed. By breaking the bridge 595, the mask 50 can be extracted from the original substrate 55A.

In this embodiment, as described above, the resist layer of the intermediate portion 52 is exposed using the first exposure mask. Further, the resist layer of the first end portion 51a is exposed using a second exposure mask different from the first exposure mask. For this reason, the dimension M12 of the intermediate part 52 can be enlarged compared with the case where the mask 50 whole is formed using one exposure mask. For this reason, the dimension M11 of the mask 50 can be enlarged, using an exposure mask that is easy to obtain. That is, the size M11 of the mask 50 can be increased while suppressing the investment in manufacturing equipment for the mask 50 .

However, since the resist layer of the first end portion 51a is exposed using a second exposure mask different from the first exposure mask, the relative position of the second exposure mask to the first exposure mask may deviate from the above. As a result, the position of the second outer hole 592 defining the first side edge 501 of the first end portion 51a is the second outer hole 592 defining the first side edge 501 of the intermediate portion 52. It may shift in the second direction D2 with respect to the position of one outer edge hole 591 . As a result, the above-described first stepped portion 501a is formed at the first side edge portion 501 .

In this embodiment, the 1st end part 51a has the 1st mark 58c. By detecting the position of the first mark 58c, the degree of displacement of the relative position of the second exposure mask with respect to the first exposure mask can be verified. For example, based on the distance G1 between the first mark 58c and the above-described first straight line L1, the degree of deviation can be verified.

The manufacturing method of the mask 50 may include a sorting step of sorting the mask 50 based on the distance G1. In the selection step, for example, masks 50 having a distance G1 equal to or less than a threshold value are selected as good products. The threshold value may be, for example, 4 mm, 2 mm, 1 mm, 200 μm, 100 μm, 50 μm, 20 μm, 10 μm, or 5 μm.

Next, a method of manufacturing the mask device 15 will be described. First, the frame 41 is prepared. Subsequently, the mask 50 is fixed to the frame 41 by welding or the like. For example, first, with the mask 50 and the frame 41 overlapping, the mask 50 is photographed using a camera or the like. At this time, tension may be applied to the mask 50 . Subsequently, the position of the mask 50 relative to the frame 41 is detected based on the image obtained by shooting. Subsequently, the position of the mask 50 is adjusted so that the position of the mask 50 relative to the frame 41 is within a predetermined range.

As shown in Fig. 15, tension may be applied to the mask 50 using a clamp. The clamps include, for example, the first clamp 81 and the second clamp 82 installed on the first end 51a, and the third clamp 83 and the fourth clamp installed on the second end 51b ( 84).

As described above, the dimension S1 of the first stepped portion 501a of the first side edge portion 501 of the mask 50 in the second direction D2 is 1 mm or less. For this reason, the tension applied to the first end portion 51a can be appropriately transmitted to the intermediate portion 52 . For this reason, the position of the intermediate part 52 can be adjusted suitably by adjusting the position of the clamps 81, 82, 83, 84.

Dimension S1 may be measured in a state where tension is applied to the mask 50 . For example, even if the dimension S1 is measured in a state in which the position of the clamps 81, 82, 83, and 84 is adjusted so that the first stepped portion 501a and the second stepped portion 502a are arranged in the second direction D2. do. Dimension S2, distance G1, distance G2, etc. may similarly be measured in a state where tension is applied to the mask 50.

Various changes can be made to one embodiment described above. Hereinafter, other embodiments will be described with reference to the drawings as needed. In the following description and drawings used in the following description, the same reference numerals used for corresponding parts in the above-described embodiment are used for parts that can be configured in the same way as in the above-described embodiment. Redundant descriptions are omitted. In addition, when it is clear that the action and effect obtained in the above-mentioned one embodiment are also obtained in other embodiments, the explanation may be omitted.

A second embodiment will be described. In the embodiment described above, an example in which the first end portion forming step includes a resist layer formation process, a second exposure process, a developing process, an etching process, and a resist removal process has been described. In the second embodiment, an example in which the first end forming step includes a laser process will be described.

The manufacturing method of the mask 50 is provided with the middle part formation step, the 1st end formation step, and the 2nd end part formation step similarly to 1st Embodiment. In the intermediate portion formation step, as in the first embodiment, a resist layer formation process, a first exposure process, a developing process, an etching process, and a resist removal process are performed. As a result, as shown in FIGS. 16A and 16B , in the original base material 55A, the through hole 56, the first outer hole 591 defining the outer edge of the intermediate portion 52, and the intermediate mark 58a are formed. is formed

Subsequently, the first end forming step is performed. The first end forming step includes a laser process of processing the original substrate 55A using the laser 66, as shown in Figs. 17A and 17B. As a result, the second outer hole 592 defining and forming the outer edge of the first end portion 51a and the mark 58c are formed.

In addition, the second end forming step is performed. As shown in FIG. 17A and FIG. 17B, the 2nd end part formation step includes the laser process which uses the laser 66 and processes 55 A of original base materials. As a result, the third outer hole 593 defining and forming the outer edge of the second end portion 51b and the mark 58c are formed.

Also in this embodiment, the dimension M12 of the intermediate portion 52 can be increased compared to the case where the entire mask 50 is formed using a single exposure mask. For this reason, the dimension M11 of the mask 50 can be enlarged, using an exposure mask that is easy to obtain. That is, the size M11 of the mask 50 can be increased while suppressing the investment in manufacturing equipment for the mask 50 .

In the laser process, the original substrate 55A may be irradiated with a laser using a laser mask. In this case, the relative position of the laser mask with respect to the 1st exposure mask may shift from ideal. As a result, the position of the second outer hole 592 defining the first side edge 501 of the first end portion 51a is the second outer hole 592 defining the first side edge 501 of the intermediate portion 52. It may shift in the second direction D2 with respect to the position of one outer edge hole 591 . As a result, the above-described first stepped portion 501a is formed at the first side edge portion 501 .

Also in this embodiment, the 1st end part 51a has the 1st mark 58c. By detecting the position of the first mark 58c, it is possible to verify the degree of deviation of the position of the laser mask relative to the first exposure mask. For example, based on the distance G1 between the first mark 58c and the above-described first straight line L1, the degree of deviation can be verified.

The laser process may use a gas laser, a solid-state laser, or a semiconductor laser. A solid-state laser is superior in that it can oscillate at a short period, such as on the order of femtoseconds, and can increase the peak output. Solid-state lasers use crystals as the laser medium. Examples of crystals are Yb:YAG, Yb:KGW, Yb:KYW, and the like. In the laser process, the irradiation position of the laser may be adjusted by means other than a laser mask.

A third embodiment will be described. In the present embodiment, an example in which the outer stepped portion is intentionally formed in the first side edge portion 501 at the boundary between the intermediate portion 52 and the first end portion 51a will be described.

18 is a plan view showing an example of the mask 50 . 19 is a plan view showing an enlarged first end portion 51a of the mask 50 in FIG. 18 .

The first stepped portion 501a has a dimension S1 in the second direction D2. Dimension S1 is 10 micrometers or more. Dimension S1 may be, for example, 10 μm or more, 20 μm or more, 50 μm or more, 100 μm or more, 500 μm or more, or 1 mm or more. Dimension S1 may be, for example, 20 μm or less, 100 μm or less, 200 μm or less, 500 μm or less, 1 mm or less, or 2 mm or less. The range of dimensions S1 is a first group consisting of 10 μm, 20 μm, 50 μm, 100 μm, 500 μm and 1 mm, and/or a second group consisting of 20 μm, 100 μm, 200 μm, 500 μm, 1 mm and 2 mm. It may be determined by group. The range of dimension S1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of dimension S1 may be determined by any combination of two of the values included in the first group described above. The range of dimension S1 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension S1 may be 10 μm or more and 2 mm or less, 10 μm or more and 1 mm or less, 10 μm or more and 500 μm or less, 10 μm or more and 200 μm or less, or 10 μm or more and 100 μm or less. , 10 μm or more and 50 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 2 mm or less, 20 μm or more and 1 mm or less, 20 μm or more and 500 μm or less, 20 μm or more and 200 μm or less 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 50 μm or more and 2 mm or less, 50 μm or more and 1 mm or less, 50 μm or more and 500 μm or less, 50 μm or more 200 ㎛ or less, 50 μm or more and 100 μm or less, 100 μm or more and 2 mm or less, 100 μm or more and 1 mm or less, 100 μm or more and 500 μm or less, 100 μm or more and 200 μm or less, 200 μm It may be 2 mm or more, 200 μm or more and 1 mm or less, 200 μm or more and 500 μm or less, 500 μm or more and 2 mm or less, 500 μm or more and 1 mm or less, or 1 mm or more and 2 mm or less.

In this embodiment, the first side edge portion 501 of the first end portion 51a is positioned outside the first side edge portion 501 of the intermediate portion 52 by 10 μm or more in the second direction D2. One end 51a is designed. For example, the area of the second exposure mask corresponding to the second peripheral hole is designed as such. For this reason, even if the relative position of the 2nd exposure mask with respect to the 1st exposure mask shifts from ideal in the 2nd direction D2, the 1st side edge 501 of the 1st end part 51a is set in the 2nd direction D2. It can be arrange|positioned outside the 1st side edge part 501 of the intermediate part 52. For this reason, the first stepped portion 501a located at the boundary between the middle portion 52 and the first end portion 51a becomes an outer stepped portion. For this reason, the tension applied from the clamps 81 and 82 to the first end portion 51a can be appropriately transmitted to the intermediate portion 52, compared to the case where the first stepped portion 501a is an inner stepped portion. For example, it is possible to suppress deviation of the direction of the tension applied to the intermediate portion 52 from the first direction D1. Accordingly, the positional accuracy of the through hole 56 of the mask 50 fixed to the frame 41 can be increased.

As shown in FIGS. 18 and 19 , an outer stepped portion may be intentionally formed in the second side edge portion 502 at the boundary between the intermediate portion 52 and the first end portion 51a. Thereby, like the dimension S1, the dimension S2mm can be made 10 micrometers or more. As the numerical range of the dimension S2, the numerical range of the dimension S1 described above can be adopted.

As shown in FIGS. 18 and 19 , even if a first stepped portion 501a serving as an outer stepped portion is intentionally formed in the first side edge portion 501 at the boundary between the middle portion 52 and the second end portion 51b. do. In the boundary between the middle portion 52 and the second end portion 51b, a second stepped portion 502a may be intentionally formed in the second side edge portion 502 as an outer stepped portion.

A fourth embodiment will be described. In this embodiment, an example in which the direction in which the first side edge portion 501 of the first end portion 51a extends is shifted from the direction in which the first side edge portion 501 of the intermediate portion 52 extends is described. do.

20 is a plan view showing an example of the mask 50 . FIG. 21A is a plan view showing an enlarged first end portion 51a of the mask 50 in FIG. 20 .

As shown in FIG. 21A , the direction in which the first side edge portion 501 of the first end portion 51a extends is a first angle θ1 with respect to the direction in which the first side edge portion 501 of the intermediate portion 52 extends. make up In other words, the first end portion 51a and the middle portion 52 are distinguished by the position where the direction in which the first side edge portion 501 extends changes. In the following description, the first side edge 501 of the first end portion 51a, which forms a first angle θ1 with respect to the direction in which the first side edge portion 501 of the intermediate portion 52 extends, is defined as the first side edge portion 501 of the first end portion 51a. It is also called an oblique side edge and is denoted by reference numeral 501b.

In the examples shown in FIGS. 20 and 21A , when the first inclined side edge 501b faces outward in the first direction D1, it is displaced outward in the second direction D2. In the following description, "an inclined side edge that is displaced outward in the second direction D2 when it faces outward in the first direction D1" is also referred to as an outer inclined side edge.

Similar to the first stepped portion 501a, the first inclined side edge portion 501b is generated because the forming step of the intermediate portion 52 and the forming step of the first end portion 51a are different. For example, when the relative direction of the second exposure mask with respect to the first exposure mask shifts from the ideal, a first inclined side edge 501b is generated according to the shift amount. Although not shown, the first end portion 51a may include both the first stepped portion 501a and the first inclined side edge portion 501b.

The first angle θ1 may be, for example, 0.0007° or more, 0.002° or more, 0.05° or more, or 0.1° or more. The first angle θ1 may be, for example, 0.2° or less, 0.5° or less, 1.0° or less, or 1.6° or less. The range of the first angle θ1 may be determined by a first group consisting of 0.0007°, 0.002°, 0.05°, and 0.1°, and/or a second group consisting of 0.2°, 0.5°, 1.0°, and 1.6°. The range of the first angle θ1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the first angle θ1 may be determined by a combination of any two of the values included in the first group described above. The range of the first angle θ1 may be determined by a combination of any two of the values included in the second group described above. For example, the first angle θ1 may be 0.0007° or more and 1.6° or less, 0.0007° or more and 1.0° or less, 0.0007° or more and 0.5° or less, 0.0007° or more and 0.2° or less, or 0.0007° or more and 0.1° or more. ° or less, 0.0007 ° or more and 0.05 ° or less, 0.0007 ° or more and 0.002 ° or less, 0.002 ° or more and 1.6 ° or less, 0.002 ° or more and 1.0 ° or less, 0.002 ° or more and 0.5 ° or less, 0.002° or more and 0.2° or less, 0.002° or more and 0.1° or less, 0.002° or more and 0.05° or less, 0.05° or more and 1.6° or less, 0.05° or more and 1.0° or less, 0.05° or more and 0.5° 0.05° or more and 0.2° or less, 0.05° or more and 0.1° or less, 0.1° or more and 1.6° or less, 0.1° or more and 1.0° or less, 0.1° or more and 0.5° or less, 0.1° or more ° or more and 0.2° or less, 0.2° or more and 1.6° or less, 0.2° or more and 1.0° or less, 0.2° or more and 0.5° or less, 0.5° or more and 1.6° or less, 0.5° or more and 1.0° or less , and may be 1.0° or more and 1.6° or less.

The direction in which the first side edge 501 extends is calculated by taking an image of the mask 50 in a planar view and analyzing a plurality of coordinates of points on the first side edge 501 based on the image. As a measuring instrument for calculating the direction in which the first side edge portion 501 extends, AMIC-2500 manufactured by Shinto S Precision can be used.

As shown in FIG. 21A , the direction in which the second side edge portion 502 of the first end portion 51a extends is a second angle θ2 with respect to the direction in which the second side edge portion 502 of the intermediate portion 52 extends. may be achieved. In the following description, the second side edge 502 of the first end portion 51a, which forms a second angle θ2 with respect to the direction in which the second side edge portion 502 of the middle portion 52 extends, is referred to as the second side edge portion 502 of the first end portion 51a. It is also called an oblique side edge and is denoted by reference numeral 502b.

In the examples shown in FIGS. 20 and 21A , when the second inclined side edge 502b faces outward in the first direction D1, it is displaced inward in the second direction D2. In the following description, "an inclined side edge that is displaced inward in the second direction D2 when facing outward in the first direction D1" is also referred to as an inner inclined side edge.

Similar to the first inclined edge 501b, the second inclined side edge portion 502b is also generated because the forming step of the intermediate portion 52 and the forming step of the first end portion 51a are different. For example, when the relative direction of the second exposure mask with respect to the first exposure mask is shifted from the ideal, the second inclined side edge 502b is generated according to the shift amount. Although not shown, the first end portion 51a may include both the second stepped portion 502a and the second inclined side edge portion 502b.

As the numerical range of the second angle θ2, the above-described numerical range of the first angle θ1 can be employed.

As shown in FIG. 20, the 1st side edge part 501 of the 2nd end part 51b may also contain the 1st inclined side edge part 501b. In the example shown in FIG. 20 , the first inclined side edge 501b of the second end portion 51b is an outside inclined side edge. Although not shown, the second end portion 51b may include both the first stepped portion 501a and the first inclined side edge portion 501b.

As shown in FIG. 20, the 2nd side edge 502 of the 2nd end part 51b may also contain the 2nd inclined side edge 502b. In the example shown in Fig. 20, the second inclined side edge 502b of the second end portion 51b is an inner inclined side edge. Although not shown, the second end portion 51b may include both the second stepped portion 502a and the second inclined side edge portion 502b.

Fig. 21B is a plan view showing a first end portion 51a according to a modified example of the fourth embodiment. As shown in FIG. 21B, the 1st end part 51a may contain the 2 or more 1st mark 58c. The 5th straight line L5 of FIG. 21B is an approximation straight line of the 2 or more 1st mark 58c. The first mark 58c may be arranged so that the direction in which the fifth straight line L5 extends is parallel to the direction in which the first inclined side edge portion 501b extends. In this case, the fifth angle θ5 between the fifth straight line L5 and the first straight line L1 corresponds to the first angle θ1 described above. As the numerical range of the fifth angle θ5, the numerical range of the first angle θ1 described above can be employed.

As shown in FIG. 21B, the 1st end part 51a may contain 2 or more 2nd mark 58d. The 6th straight line L6 of FIG. 21B is an approximation straight line of two or more 2nd mark 58d. The second mark 58d may be arranged so that the direction in which the sixth straight line L6 extends is parallel to the direction in which the second inclined side edge portion 502b extends. In this case, the sixth angle θ6 between the sixth straight line L6 and the second straight line L2 corresponds to the second angle θ2 described above. As the numerical range of the sixth angle θ6, the numerical range of the first angle θ1 described above can be employed.

Fig. 22 is a plan view showing a first end portion 51a according to a modified example of the fourth embodiment. As shown in Fig. 22, both the first inclined side edge 501b and the second inclined side edge 502b of the first end portion 51a may be outer inclined side edges.

A fifth embodiment will be described. In the embodiment described above, an example in which the shape of the stepped portion, the inclined side edge portion, etc. distinguishes the middle portion 52 from the first end portion 51a has been shown. In 5th Embodiment, based on the dimension of the middle part 52, the example which distinguishes the middle part 52 from the 1st end part 51a is demonstrated.

In this embodiment, the intermediate portion 52 has a center C2 coincident with the center C1 of the mask 50 in the first direction D1. The dimension M12 of the intermediate portion 52 in the first direction D1 is 1250 mm. In other words, in this embodiment, the part of the mask 50 having the center C2 coincident with the center C1 and having a length of 1250 mm in the first direction D1 is defined as the intermediate portion 52 . Moreover, the part of the mask 50 located outside the middle part 52 in the 1st direction D1 is defined as the 1st end part 51a and the 2nd end part 51b.

The length of the first side edge 501 determined based on the first exposure mask may be shorter than 1250 mm. In this case, as shown in FIG. 23 , the first side edge 501 of the intermediate portion 52 may include the first stepped portion 501a. The length of the first side edge 501 determined based on the first exposure mask may be longer than 1250 mm. In this case, although not shown, the first side edge portion 501 of the first end portion 51a may include the first stepped portion 501a.

As shown in FIG. 23, the 1st end part 51a may also contain the 1st mark 58c. Similar to the above-described embodiment, the first mark 58c can function as an index of processing accuracy in the first end forming step.

As shown in FIG. 23 , the second side edge 502 of the intermediate portion 52 may include the second stepped portion 502a. Although not shown, the second side edge portion 502 of the first end portion 51a may include the second stepped portion 502a. The first end portion 51a may also include the second mark 58d.

A sixth embodiment will be described. In the above-described first embodiment, an example in which the third exposure process of the second end portion formation step is performed using an exposure mask different from the first exposure process of the intermediate portion 52 has been shown. In 6th Embodiment, the example in which the exposure process of the 2nd end part formation step is performed using the 1st exposure process of the intermediate part 52 and the common exposure mask is demonstrated.

As in the case of the first embodiment, a resist layer forming process is performed. Subsequently, the first exposure process is performed. The first exposure process exposes the resist layer on the original substrate 55A using a first exposure mask. As shown in FIG. 24, the 1st exposure mask exposes the resist layer located in the area|region corresponding to the middle part 52, and the resist layer located in the area|region corresponding to the 2nd end part 51b. 25 is a plan view showing an example of a resist layer exposed by the first exposure mask.

Subsequently, the second exposure process is performed. The second exposure process exposes the resist layer on the original substrate 55A using a second exposure mask. As shown in FIG. 25, the 2nd exposure mask exposes the resist layer located in the area|region corresponding to the 1st end part 51a. 26 is a plan view showing an example of a resist layer exposed by the second exposure mask.

Subsequently, as in the case of the first embodiment, a developing process, an etching process, and a resist layer removal process are performed. 27 is a plan view showing an example of the mask 50 manufactured. The first side edge portion 501 of the mask 50 may include a first stepped portion 501a located at the boundary between the middle portion 52 and the first end portion 51a. The second side edge portion 502 of the mask 50 may also include a second stepped portion 502a located at the boundary between the middle portion 52 and the first end portion 51a. On the other hand, the first stepped portion and the second stepped portion need not be formed at the boundary between the intermediate portion 52 and the second end portion 51b. In this case, even if the boundary between the middle portion 52 and the second end portion 51b is set at a position symmetrical to the first stepped portion 501a with respect to the center C1 of the mask 50 in the first direction D1. do. That is, the position M13 away from the second end 504 in the first direction D1 may be determined as the boundary between the middle portion 52 and the second end portion 51b. M13 is the dimension of the first end portion 51a in the first direction D1.

Also in this embodiment, the resist layer of the 1st end part 51a is exposed using the 2nd exposure mask different from the 1st exposure mask. For this reason, the dimension M12 of the intermediate part 52 can be enlarged compared with the case where the mask 50 whole is formed using one exposure mask. For this reason, the dimension M11 of the mask 50 can be enlarged, using an exposure mask that is easy to obtain. That is, the size M11 of the mask 50 can be increased while suppressing the investment in manufacturing equipment for the mask 50 .

A seventh embodiment will be described. In the embodiment described above, an example in which the first stepped portion 501a is located at the boundary between the intermediate portion 52 and the second end portion 51b has been shown. In the seventh embodiment, an example in which the first stepped portion 501a is located at the first side edge portion 501 of the intermediate portion 52 will be described.

28A is a plan view showing an example of the mask 50 . The first side edge portion 501 of the mask 50 may include a first stepped portion 501a located in the middle portion 52 . The second side edge 502 of the mask 50 may include a second stepped portion 502a located in the middle portion 52 . The positions of the first stepped portion 501a and the second stepped portion 502a in the first direction D1 are preferably located between two adjacent through hole groups 53 in the first direction D1. In other words, when the mask 50 is viewed along the second direction D2, it is preferable that the first stepped portion 501a and the second stepped portion 502a do not overlap the through hole group 53.

As shown in Fig. 28A, the first stepped portion and the second stepped portion need not be formed at the boundary between the intermediate portion 52 and the first end portion 51a. As shown in Fig. 28A, the first stepped portion and the second stepped portion need not be formed at the boundary between the intermediate portion 52 and the second end portion 51b.

The region of the intermediate portion 52 located between the first end portion 51a and the first stepped portion 501a in the first direction D1 is also referred to as the first intermediate portion 52a. The region of the intermediate portion 52 located between the second end portion 51b and the first stepped portion 501a in the first direction D1 is also referred to as the second intermediate portion 52b. Both the first intermediate portion 52a and the second intermediate portion 52b include at least one through hole group 53 . Both of the first intermediate portion 52a and the second intermediate portion 52b may include at least two through hole groups 53 .

A region of the mask 50 positioned between the first end 503 and the first stepped portion 501a in the first direction D1 is also referred to as a first portion 50A. A region of the mask 50 positioned between the second end 504 and the first stepped portion 501a in the first direction D1 is also referred to as a second portion 50B.

The mask 50 according to the seventh embodiment may be expressed as follows.

is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

The first side edge portion is located in the middle portion and includes a first stepped portion displaced in a second direction orthogonal to the first direction,

A mask in which a dimension of the first stepped portion in the second direction is 3.0 μm or less.

In this embodiment, the boundary between the intermediate portion 52 and the first end portion 51a is determined based on the group of through holes 53 closest to the first end 503 . As shown in FIG. 28A , the boundary line BL1 representing the boundary extends in the second direction D2 so as to contact the plurality of through holes 56 closest to the first end 503 . Similarly, the boundary between the intermediate portion 52 and the second end portion 51b is determined based on the group of through holes 53 closest to the second end 504 . As shown in FIG. 28A , the boundary line BL2 representing the boundary extends in the second direction D2 so as to contact the plurality of through holes 56 closest to the second end 504 .

Fig. 28B is a plan view showing an enlarged middle portion 52 of the mask 50 in Fig. 28A. The dimension of the first stepped portion 501a in the second direction D2 may correspond to the distance G3 between the fifth reference point P5 and the seventh straight line L7. A seventh straight line L7 is defined as a straight line passing through the seventh reference point P7 and the ninth reference point P9. The fifth reference point P5 is the first intermediate mark 58a of the first intermediate portion 52a, which is closest to the first stepped portion 501a. The seventh reference point P7 is the first intermediate mark 58a of the second intermediate portion 52b closest to the first stepped portion 501a. The ninth reference point P9 is the first mark 58c of the second end portion 51b.

The dimension of the first stepped portion 501a in the second direction D2 may be, for example, 0.1 μm or more, 0.2 μm or more, 0.5 μm or more, or 1.0 μm or more. The dimension of the first stepped portion 501a may be, for example, 1.5 μm or less, 2.0 μm or less, 2.5 μm or less, or 3.0 μm or less. The range of dimensions of the first stepped portion 501a is in the first group consisting of 0.1 μm, 0.2 μm, 0.5 μm and 1.0 μm, and/or in the second group consisting of 1.5 μm, 2.0 μm, 2.5 μm and 3.0 μm. may be determined by The range of dimensions of the first stepped portion 501a may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of dimensions of the first stepped portion 501a may be determined by any combination of two of the values included in the first group described above. The range of dimensions of the first stepped portion 501a may be determined by any combination of two of the values included in the above-described second group. The dimension of the first stepped portion 501a may be, for example, 0.1 μm or more and 3.0 μm or less, 0.1 μm or more and 2.5 μm or less, 0.1 μm or more and 2.0 μm or less, or 0.1 μm or more and 1.5 μm or less, 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.1 μm or more and 0.2 μm or less, 0.2 μm or more and 3.0 μm or less, 0.2 μm or more and 2.5 μm or less, 0.2 μm or more and 2.0 μm or less 0.2 μm or more and 1.5 μm or less, 0.2 μm or more and 1.0 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 2.5 μm or less, 0.5 μm or more ㎛ or more and 2.0 μm or less, 0.5 μm or more and 1.5 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 3.0 μm or less, 1.0 μm or more and 2.5 μm or less, 1.0 μm or more and 2.0 μm or less 1.0 μm or more and 1.5 μm or less, 1.5 μm or more and 3.0 μm or less, 1.5 μm or more and 2.5 μm or less, 1.5 μm or more and 2.0 μm or less, 2.0 μm or more and 3.0 μm or less, 2.0 μm It may be greater than or equal to 2.5 μm, and may be greater than or equal to 2.5 μm and less than or equal to 3.0 μm.

The numerical range of the dimension of the first stepped portion 501a is also adopted as the numerical range of the distance G3.

The size of the second stepped portion 502a in the second direction D2 may correspond to the distance G4 between the sixth reference point P6 and the eighth straight line L8. The eighth straight line L8 is defined as a straight line passing through the eighth reference point P8 and the tenth reference point P10. The sixth reference point P6 is the second intermediate mark 58b of the first intermediate portion 52a, which is closest to the second stepped portion 502a. The eighth reference point P8 is the second intermediate mark 58b of the second intermediate portion 52b closest to the second stepped portion 502a. The tenth reference point P10 is the second mark 58d on the second end portion 51b.

As the numerical range of the dimension of the second stepped portion 502a in the second direction D2, the above-described numerical range of the dimension of the first stepped portion 501a can be adopted. Also as the numerical range of the distance G4, the above-described numerical range of the dimension of the first stepped portion 501a can be adopted.

The center C1 of the mask 50 may be determined as an intersection of the third central line extending in the first direction D1 and the ninth straight line L9. The 3rd center line is a straight line located in the middle of the 7th straight line L7 and the 8th straight line L8. The ninth straight line L9 is a straight line passing through the seventh reference point P7 and the eighth reference point P8.

The first portion 50A has dimensions M15 in the first direction D1. The second portion 50B has a dimension M16 in the first direction D1.

The dimension M15 of the first portion 50A may be 900 mm or more, 1100 mm or more, 1200 mm or more, or 2000 mm or more. The dimension M15 may be, for example, 1100 mm or less, 1200 mm or less, 1800 mm or less, 2000 mm or less, or 2200 mm or less. The range of the dimension M15 may be determined by a first group consisting of 900 mm, 1100 mm, 1200 mm, and 2000 mm, and/or a second group consisting of 1100 mm, 1200 mm, 1800 mm, 2000 mm, and 2200 mm. The range of the dimension M15 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension M15 may be determined by any combination of two of the values included in the first group described above. The range of the dimension M15 may be determined by any combination of any two of the values included in the second group described above. For example, the dimension M15 may be 900 mm or more and 2200 mm or less, 900 mm or more and 2000 mm or less, 900 mm or more and 1800 mm or less, 900 mm or more and 1200 mm or less, 900 mm or more and 1100 mm or less, 1100 mm or more and 2200 mm or less, 1100 mm or more and 2000 mm or less, 1100 mm or more and 1800 mm or less, 1100 mm or more and 1200 mm or less, 1200 mm or more and 2200 mm or less, 1200 mm or more and 2000 mm or less, 1200 mm or more and 1800 mm or less, 1800 mm or more and 2200 mm or less, It may be more than 2000 mm or less, and may be 2000 mm or more and 2200 mm or less.

M16/M15, which is a ratio of the size M16 of the second portion 50B to the size M15 of the first portion 50A, may be, for example, 0.5 or more, 0.7 or more, or 0.9 or more. M16/M15 may be, for example, 1.1 or less, 1.3 or less, or 1.5 or less. The range of M16/M15 may be determined by the first group consisting of 0.5, 0.7 and 0.9 and/or the second group consisting of 1.1, 1.3 and 1.5. The range of M16/M15 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of M16/M15 may be determined by a combination of any two of the values included in the first group described above. The range of M16/M15 may be determined by a combination of any two of the values included in the second group described above. For example, M16/M15 may be 0.5 or more and 1.5 or less, 0.5 or more and 1.3 or less, 0.5 or more and 1.1 or less, 0.5 or more and 0.9 or less, 0.5 or more and 0.7 or less, or 0.7 or more and 1.5 or less. , 0.7 or more and 1.3 or less, 0.7 or more and 1.1 or less, 0.7 or more and 0.9 or less, 0.9 or more and 1.5 or less, 0.9 or more and 1.3 or less, 0.9 or more and 1.1 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less may be sufficient, and 1.3 or more and 1.5 or less may be sufficient.

The first end portion 51a may also include a first mark 58c and a second mark 58d. The second end portion 51b may also include the first mark 58c and the second mark 58d. The 1st intermediate part 52a may also contain the 1st intermediate mark 58a and the 2nd intermediate mark 58b. The 2nd intermediate part 52b may also contain the 1st intermediate mark 58a and the 2nd intermediate mark 58b.

The thickness T of the mask 50 according to the seventh embodiment may be 25 μm or more. In this way, the rigidity of the mask 50 can be increased. For this reason, when tension is applied to the mask 50 in the first direction D1, the mask 50 is locally greatly deformed around the first stepped portion 501a or the second stepped portion 502a. can suppress it. In this way, it is possible to suppress the position of the through hole 56 of the through hole group 53 adjacent to the first stepped portion 501a or the second stepped portion 502a from being displaced from an abnormal position.

The thickness T of the mask 50 according to the seventh embodiment may be, for example, 25 μm or more, 30 μm or more, or 35 μm or more. The thickness T may be, for example, 50 μm or less, 80 μm or less, or 100 μm or less. The range of the thickness T may be determined by the first group consisting of 25 µm, 30 µm and 35 µm, and/or the second group consisting of 50 µm, 80 µm and 100 µm. The range of the thickness T may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness T may be determined by any combination of two of the values included in the first group described above. The range of the thickness T may be determined by any combination of two of the values included in the above-described second group. The thickness T may be, for example, 25 μm or more and 100 μm or less, 25 μm or more and 80 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 35 μm or less, or 25 μm or more and 30 μm or less. 30 μm or more and 100 μm or less, 30 μm or more and 80 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 35 μm or less, 35 μm or more and 100 μm or less, 35 μm or more It may be 80 μm or less, 35 μm or more and 50 μm or less, 50 μm or more and 100 μm or less, 50 μm or more and 80 μm or less, or 80 μm or more and 100 μm or less.

The manufacturing method of the mask 50 shown in FIG. 28A is demonstrated.

As in the case of the first embodiment, a resist layer forming process is performed. Subsequently, the first exposure process is performed. A 1st exposure process exposes the resist layer on the original base material 55A using a 1st exposure mask, as shown to FIG. 28C. The first exposure mask may include a first surface first exposure mask that exposes the first resist layer and a second surface first exposure mask 712 that exposes the second resist layer 62 . The first exposure mask exposes the resist layer located in the region corresponding to the first portion 50A. Specifically, the first exposure mask exposes the resist layer located in the region corresponding to the first intermediate portion 52a and the resist layer located in the region corresponding to the first end portion 51a.

Fig. 28D is a plan view showing an example of the second resist layer 62 exposed by the second surface first exposure mask 712. The exposed second resist layer 62 includes a second developing layer 62a and a second remaining layer 62b. Although not shown, the exposed first resist layer includes a first developing layer and a second remaining layer.

Subsequently, the second exposure process is performed. The second exposure process exposes the resist layer on the original substrate 55A using a second exposure mask. A 2nd exposure process exposes the resist layer on 55 A of original base materials using a 2nd exposure mask, as shown to FIG. 28E. The second exposure mask may include a first surface second exposure mask that exposes the first resist layer and a second surface second exposure mask 722 that exposes the second resist layer 62 . The second exposure mask exposes the resist layer located in the region corresponding to the second portion 50B. Specifically, the second exposure mask exposes the resist layer located in the region corresponding to the second intermediate portion 52b and the resist layer located in the region corresponding to the second end portion 51b.

In the second exposure process, the position of the second exposure mask may be adjusted based on the position, outline, etc. of the second developing layer 62a or the second remaining layer 62b generated in the first exposure process. .

Subsequently, as in the case of the first embodiment, a developing process, an etching process, and a resist layer removal process are performed. In this way, the mask 50 shown in Fig. 28A can be produced.

The manufacturing method of the mask 50 may include a sorting step of sorting the mask 50 based on the size of the first stepped portion 501a in the second direction D2. In the sorting step, for example, masks 50 whose dimensions of the first stepped portion 501a are equal to or less than a threshold value are sorted as good products. The threshold value may be, for example, 3.0 μm, 2.5 μm, 2.0 μm, 1.5 μm, or 1.0 μm. In the screening step, the mask 50 having a distance G3 equal to or less than the aforementioned threshold may be selected as a good product. In the selection step, the mask 50 having a distance in the first direction D1 between the center point QC1 and the center point QC2 described later may be equal to or less than the above-described threshold value as a good product. In the selection step, the mask 50 having a distance in the second direction D2 between the center point QC1 and the center point QC2 described later may be equal to or less than the above-mentioned threshold value as a good product.

In the screening step, the mask 50 having a first angle θ1 described later below a threshold value may be selected as a good product. The threshold may be 0.0240°, 0.0100°, 0.0050°, or 0.0020°.

Also in this embodiment, the dimension of the intermediate part 52 can be enlarged compared with the case where the whole mask 50 is formed using one exposure mask. For this reason, the dimension M11 of the mask 50 can be enlarged, using an exposure mask that is easy to obtain. That is, the size M11 of the mask 50 can be increased while suppressing the investment in manufacturing equipment for the mask 50 .

By detecting the position of the first mark 58c on the first end 51a and the position of the first mark 58c on the second end 51b, the displacement of the relative position of the second exposure mask with respect to the first exposure mask You can verify the degree of By detecting the position of the first intermediate mark 58a of the first intermediate portion 52a and the position of the first intermediate mark 58a of the second intermediate portion 52b, the second exposure mask relative to the first exposure mask is formed. The degree of deviation of the relative positions may be verified.

In the mask 50 according to the seventh embodiment, the direction in which the first side edge 501 of the first portion 50A extends is such that the first side edge 501 of the second portion 50B extends. The first angle θ1 may be formed with respect to the direction.

In this case, the mask 50 according to the seventh embodiment may be expressed as follows.

is a mask,

A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;

Equipped with a group of through holes penetrating the substrate;

In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,

The intermediate portion includes a first intermediate portion adjacent to the first end portion and a second intermediate portion adjacent to the second end portion,

A direction in which the first side edge of the first intermediate portion extends is deviated from a direction in which the first side edge of the second intermediate portion extends,

mask.

In the mask 50 according to the seventh embodiment, the first angle θ1 may be, for example, 0.00005° or more, 0.0001° or more, 0.0003° or more, or 0.0010° or more. The first angle θ1 may be, for example, 0.0020° or less, 0.0050° or less, 0.0100° or less, or 0.0240° or less. The range of the first angle θ1 may be determined by a first group consisting of 0.00005°, 0.0001°, 0.0003°, and 0.0010°, and/or a second group consisting of 0.0020°, 0.0050°, 0.0100°, and 0.0240°. The range of the first angle θ1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the first angle θ1 may be determined by a combination of any two of the values included in the first group described above. The range of the first angle θ1 may be determined by a combination of any two of the values included in the second group described above. For example, the first angle θ1 may be 0.00005° or more and 0.0240° or less, 0.00005° or more and 0.0100° or less, 0.00005° or more and 0.0050° or less, 0.00005° or more and 0.0020° or less, or 0.00005° or more and 0.0010 ° or less, 0.00005 ° or more and 0.0003 ° or less, 0.00005 ° or more and 0.0001 ° or less, 0.0001 ° or more and 0.0240 ° or less, 0.0001 ° or more and 0.0100 ° or less, 0.0001 ° or more and 0.0050 ° or less, 0.0001° or more and 0.0020° or less, 0.0001° or more and 0.0010° or less, 0.0001° or more and 0.0003° or less, 0.0003° or more and 0.0240° or less, 0.0003° or more and 0.0100° or less, 0.0003° or more and 0.0050° 0.0003° or more and 0.0020° or less, 0.0003° or more and 0.0010° or less, 0.0010° or more and 0.0240° or less, 0.0010° or more and 0.0100° or less, 0.0010° or more and 0.0050° or less, 0.0010 ° or more and 0.0020° or less, 0.0020° or more and 0.0240° or less, 0.0020° or more and 0.0100° or less, 0.0020° or more and 0.0050° or less, 0.0050° or more and 0.0240° or less, 0.0050° or more and 0.0100° or less may be, and may be 0.0100° or more and 0.0240° or less.

Fig. 28F is an enlarged plan view showing the double reference mark 58W positioned at the boundary between the first intermediate portion 52a and the second intermediate portion 52b. The double reference mark 58W includes a first contour 58w1 and a second contour 58w2. The first outline 58w1 includes a part of the outline of the mark having a shape determined by the first exposure process. For example, the first outline 58w1 includes a part of the outline of the first intermediate mark defined by the first exposure process. In Fig. 28F, a first intermediate mark determined by the first exposure process is denoted by reference numeral 58a1. The second outline 58w2 includes the outline of a mark having a shape determined by the second exposure process. For example, the second contour 58w2 includes a part of the contour of the second intermediate mark defined by the second exposure process. In Fig. 28F, the first intermediate mark determined by the second exposure process is denoted by the reference numeral 58a2. In FIG. 28F, an example in which both the first intermediate mark 58a1 and the first intermediate mark 58a2 have a circular shape is shown.

The double reference mark 58W is formed by performing the second exposure process so that a mark having a shape determined by the second exposure process coincides with a mark having a shape determined by the first exposure process. In the case where the position of the second exposure mask relative to the first exposure mask is deviated from the ideal, the outline of the double reference mark 58W includes the first outline 58w1 and the second outline 58w2 described above. The first contour 58w1 may be a circular arc in which the first intermediate mark has a central angle φ1 with respect to the central point QC1 of the symbol 58a1. The second contour 58w2 may be a circular arc in which the first intermediate mark has a central angle φ2 with respect to the central point QC2 of the symbol 58a2. Both the central angle φ1 and the central angle φ2 are greater than 180°. The smaller the position of the second exposure mask relative to the first exposure mask and the deviation from the ideal, the closer the central angle φ1 and the central angle φ2 are to 180°.

The central angle φ1 may be, for example, 181° or more, 185° or more, or 190° or more. The central angle φ1 may be, for example, 200° or less, 220° or less, or 250° or less. The range of the central angle φ1 may be determined by the first group consisting of 181°, 185° and 190° and/or the second group consisting of 200°, 220° and 250°. The range of the central angle φ1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the central angle φ1 may be determined by any combination of two of the values included in the first group described above. The range of the central angle φ1 may be determined by any combination of two of the values included in the above-mentioned second group. The central angle φ1 may be, for example, 181° or more and 250° or less, 181° or more and 220° or less, 181° or more and 200° or less, 181° or more and 190° or less, or 181° or more and 185° or less. 185° or more and 250° or less, 185° or more and 220° or less, 185° or more and 200° or less, 185° or more and 190° or less, 190° or more and 250° or less, 190° or more It may be 220° or less, 190° or more and 200° or less, 200° or more and 250° or less, 200° or more and 220° or less, or 220° or more and 250° or less.

As the range of the central angle φ2, the numerical range of the central angle φ1 described above can be adopted.

The distance between center point QC1 and center point QC2 in the 2nd direction D2 becomes small, so that the deviation|deviation of the position of the 2nd exposure mask with respect to the 1st exposure mask from ideal is small. As the numerical range of the distance between the central point QC1 and the central point QC2 in the second direction D2, the above-described numerical range of the dimension of the first stepped portion 501a can be adopted.

The distance between the center point QC1 and the center point QC2 in the first direction D1 decreases, so that the displacement of the position of the second exposure mask relative to the first exposure mask from the ideal is smaller. As the numerical range of the distance between the central point QC1 and the central point QC2 in the first direction D1, the above-described numerical range of the dimension of the first stepped portion 501a can be adopted.

The position of the double fiducial mark 58W is not particularly limited. For example, the double reference mark 58W is closest to the through hole group 53 of the first intermediate portion 52a, which is closest to the first stepped portion 501a, and closest to the first stepped portion 501a. You may be located between the through-hole group 53 of the 2nd intermediate part 52b which exists. For example, the double reference mark 58W may be formed on the mask 50 of the first to sixth embodiments.

Although several other embodiments have been described relative to the above-described one embodiment, it is naturally possible to apply a plurality of embodiments in appropriate combination.

[Example]

Next, the embodiment of the present disclosure will be described more specifically with examples, but the embodiment of the present disclosure is not limited to the description of the following examples, unless the gist thereof is exceeded.

(basic example)

The mask 50 shown in FIG. 29 was manufactured by implementing the manufacturing method provided with the intermediate part formation step, the 1st end part formation step, and the 2nd end part formation step.

The intermediate portion formation step includes a resist layer formation process, a first exposure process, a development process, an etching process, and a resist removal process.

The first end forming step includes a resist layer forming process, a second exposure process, a developing process, an etching process, and a resist removal process.

The second end forming step includes a resist layer forming process, a third exposure process, a developing process, an etching process, and a resist removal process.

In the resist layer formation process, a resist layer was simultaneously provided in the regions of the original substrate corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b.

The 2nd exposure process and the 3rd exposure process were implemented at the timing different from the 1st exposure process. In each exposure process, position alignment of the exposure mask was performed by moving the exposure mask using a driving device provided with a microactuator. Specifically, in the second exposure process and the third exposure process, the exposure mask was aligned so that the alignment mark of the exposure mask coincided with the alignment mark of the resist layer exposed in the first exposure process. The position of the alignment mark of the resist layer and the position of the alignment mark of the exposure mask were read by image processing with a resolution of 0.1 mu m.

In the developing process, the etching process and the resist removal process, the resist layer located in the regions of the original substrate corresponding to the intermediate portion 52, the first end portion 51a and the second end portion 51b were processed simultaneously.

Design values of the dimensions of the mask shown in Fig. 29 are as follows.

・Dimension M11 of the mask 50 in the first direction D1: 1650 mm

・Dimension M12 of the middle part 52 in the first direction D1: 1250 mm

Dimension M13 of the first end portion 51a in the first direction D1: 200 mm

Dimension M14 of the second end portion 51b in the first direction D1: 200 mm

・Dimension M20 of the middle part 52 in the second direction D2: 76 mm

Dimensions of the first end portion 51a in the second direction D2: 76 mm

Dimensions of the second end portion 51b in the second direction D2: 76 mm

As shown in Fig. 29, the intermediate portion 52 includes an intermediate mark. The 1st end part 51a and the 2nd end part 51b contain a mark. Intermediate marks and marks are through holes penetrating the substrate. Reference numeral M1 indicates a mark located at the first end portion 51a and closest to the first stepped portion 501a. Reference numeral M2 denotes a mark located at the first end portion 51a and closest to the second stepped portion 502a. Reference numeral M3 denotes a mark located at the second end portion 51b and closest to the first stepped portion 501a. Reference numeral M4 denotes a mark located at the second end portion 51b and closest to the second stepped portion 502a.

The first surface of the mask 50 was photographed using AMIC-2500 manufactured by Shinto S Precision.

Fig. 30A is a diagram showing an image including the first stepped portion 501a of the first end portion 51a and an image including the mark M1. The distance G1 between the mark M1 and the first straight line L1 in the second direction D2 was 11.7 µm.

Fig. 30B is a diagram showing an image including the second stepped portion 502a of the first end portion 51a and an image including the mark M2. The distance G2 between the mark M2 and the second straight line L2 in the second direction D2 was 12.9 µm.

Fig. 30C is a diagram showing an image including the first stepped portion 501a of the second end portion 51b and an image including the mark M3. Symbol S1' represents the dimension of the first stepped portion 501a of the second end portion 51b in the second direction D2. Symbol G1' represents the distance between the mark M3 and the first straight line L1 in the second direction D2. The distance G1' was 7.3 mu m.

Fig. 30D is a diagram showing an image including the second stepped portion 502a of the second end portion 51b and an image including the mark M4. Symbol S2' represents the dimension of the second stepped portion 502a of the second end portion 51b in the second direction D2. Symbol G2' represents the distance between the mark M4 and the second straight line L2 in the second direction D2. The distance G2' was 6.6 mu m.

(Examples 1 to 49)

In each of Examples 1 to 49, the mask 50 shown in FIG. was manufactured. Subsequently, the coordinates of the marks M1 to M4 with respect to the center C1 were measured using AMIC-2500 manufactured by Shinto S Precision. Then, in the first direction D1 and the second direction D2, the shift between the measured coordinates of the marks M1 to M4 and the coordinates of the ideal marks M1 to M4 was calculated. The calculation results are shown in the "M1" column, "M2" column, "M3" column, and "M4" column in FIG. 31 . The unit of the numerical value is mm. In the column of “D1 coordinates” in FIG. 31 , a positive value means that the measured coordinates are displaced from the ideal coordinates in the upward direction in FIG. 29 . In the column of “D1 coordinates” in FIG. 31 , a negative value means that the measured coordinates are shifted downward in FIG. 29 from the ideal coordinates. In the column of “D2 coordinates” in FIG. 31 , a positive value means that the measured coordinates are shifted to the right in FIG. 29 from the ideal coordinates. In the column of “D2 coordinates” in FIG. 31 , a negative value means that the measured coordinates are shifted to the left in FIG. 29 with respect to the ideal coordinates.

Further, the coordinates of the through hole 56 relative to the center C1 were measured. The number of through holes 56 measured is 15. Subsequently, the maximum value of the distance between the measured coordinates of the through hole 56 and the coordinates of the ideal through hole 56 was calculated. The calculation results are shown in the column of "PPA" in FIG. 31 . "PPA" means Pixel Position Accuracy. The unit of the numerical value is μm.

In the process of measuring the coordinates of the through hole 56, tension was applied to the mask 50. The tension was adjusted so that the marks M1 and M3 were aligned in the first direction D1, and the marks M2 and M4 were aligned in the first direction D1. The process of measuring the coordinates of the through hole 56 was performed while the mask 50 was fixed to the frame 41 . The mask 50 is fixed to the frame 41 with tension applied so that the marks M1 and M3 are aligned in the first direction D1, and the marks M2 and M4 are aligned in the first direction D1. The measuring means for measuring the coordinates of the through hole 56 includes a camera that photographs the first surface 551 of the mask 50 . Information about the coordinates of the through hole 56 is obtained by analyzing the image captured by the camera. The measuring means may be provided in a device for fixing the mask 50 to the frame 41 .

The process of measuring the coordinates of the marks M1 to M4 was performed without applying tension to the mask 50 .

(Reference Example 1)

A mask 50 serving as a reference for the mask 50 of Examples 1 to 49 was produced. In Reference Example 1, the resist layer located in the region of the original substrate corresponding to the intermediate portion 52, the first end portion 51a, and the second end portion 51b was exposed in one exposure step.

As in Examples 1 to 49, the coordinates of the marks M1 to M4 on the mask 50 of Reference Example 1 were measured. Then, in the first direction D1 and the second direction D2, the shift between the measured coordinates of the marks M1 to M4 and the coordinates of the ideal marks M1 to M4 was calculated. The calculation results are shown in the "M1" column, "M2" column, "M3" column, and "M4" column in FIG. 31 . As shown in Fig. 31, in Reference Example 1, the shift amount is zero.

As in Examples 1 to 49, the coordinates of the through hole 56 of the mask 50 of Reference Example 1 were measured. Subsequently, the maximum value of the distance between the measured coordinates of the through hole 56 and the coordinates of the ideal through hole 56 was calculated. The calculation results are shown in the column of "PPA" in FIG. 31 . PPA was 2.4 μm.

(Reference Example 2)

A mask 50 serving as a reference for the mask 50 of Examples 1 to 49 was produced. In Reference Example 2, the resist layer located in the region of the original substrate corresponding to the intermediate portion 52 was exposed in one exposure step. Areas corresponding to the first end portion 51a and the second end portion 51b are not provided.

Subsequently, the coordinates of the through holes 56 of the mask 50 of Reference Example 2 were measured in a state where tension was applied to the mask 50 in the first direction D1. Subsequently, the maximum value of the distance between the measured coordinates of the through hole 56 and the coordinates of the ideal through hole 56 was calculated. The calculation results are shown in the column of "PPA" in FIG. 31 . PPA was 2.0 μm.

As shown in Fig. 31, when the number of bad marks was 2 or less and the number of not good marks was 2 or less, the PPA was 3.0 µm or less. The number of bad marks is the number of marks for which the absolute value of the offset amount of the coordinates in the second direction D2 is 1.5 mm or more among the marks M1 to M4. The number of not good marks is the number of marks in which the absolute value of the offset amount of coordinates in the second direction D2 is 1.0 mm or more among the marks M1 to M4. On the other hand, when the number of bad marks was 2 or more and the number of not good marks was 3 or more, PPA exceeded 3.0 μm.

As shown in FIG. 31 , when the absolute values of the shift amounts of the coordinates of the marks M1 to M4 in the second direction D2 were all 1.0 mm or less, the PPA was 2.5 μm or less. On the other hand, when at least one of the absolute values of the deviation amount of the coordinates of the marks M1 to M4 in the second direction D2 exceeded 1.0 mm, the PPA exceeded 2.5 μm.

(Examples 50 to 56)

In each of Examples 50 to 56, a mask 50 of FIG. 28A including a first portion 50A and a second portion 50B was manufactured as in the case of the seventh embodiment described above.

The first portion forming step for forming the first portion 50A includes a resist layer forming process, a first exposure process, a developing process, an etching process, and a resist removal process.

The second portion forming step for forming the second portion 50B includes a resist layer forming process, a second exposure process, a developing process, an etching process, and a resist removal process.

Design values of dimensions of the mask shown in Fig. 28A are as follows.

・Dimension M11 of the mask 50 in the first direction D1: 1650 mm

Dimension M15 of the first portion 50A in the first direction D1: 825 mm

Dimension M16 of the second part 50B in the first direction D1: 825 mm

Dimensions of the first end portion 51a in the first direction D1: 200 mm

Dimensions of the second end portion 51b in the first direction D1: 200 mm

Dimensions of the first portion 50A in the second direction D2: 76 mm

Dimensions of the second portion 50B in the second direction D2: 76 mm

The coordinates of the reference points P5 to P8 relative to the center C1 were measured using AMIC-2500 manufactured by Shinto S Precision. Then, in the first direction D1 and the second direction D2, the deviation between the measured coordinates of the reference points P5 to P8 and the ideal coordinates of the reference points P5 to P8 was calculated. The calculation results are shown in the "P5" column, "P6" column, "P7" column and "P8" column of FIG. 32 . The unit of the numerical value is μm. In the column of “D1 coordinates” in FIG. 32 , a positive value means that the measured coordinates are displaced from the ideal coordinates in the upward direction in FIG. 28A . In the column of “D1 coordinates” in FIG. 32 , a negative value means that the measured coordinates are displaced downward from the ideal coordinates in FIG. 28A . In the column of "D2 coordinates" in Fig. 32, a positive value means that the measured coordinates are shifted to the right in Fig. 28A from the ideal coordinates. In the column of “D2 coordinates” in FIG. 32, a negative value means that the measured coordinates are displaced from the ideal coordinates in the left direction in FIG. 28A.

Further, the coordinates of the through hole 56 relative to the center C1 were measured. The number of through holes 56 measured is 15. Subsequently, the maximum value of the distance between the measured coordinates of the through hole 56 and the coordinates of the ideal through hole 56 was calculated. The calculation results are shown in the column of "PPA" in FIG. 32 .

In the process of measuring the coordinates of the through hole 56, tension was applied to the mask 50. Specifically, the coordinates of the through hole 56 of the mask 50 fixed to the frame 41 were measured. The coordinates of the through hole 56 were measured by a measuring means provided in a device for fixing the mask 50 to the frame 41 .

The step of measuring the coordinates of the reference points P5 to P8 was performed without applying tension to the mask 50 .

(Examples 57 to 66)

In Examples 57 to 66, as in Examples 50 to 56, a mask 50 of FIG. 28A including a first part 50A and a second part 50B was manufactured. Design values of the dimensions of the mask are the same as those in Examples 50 to 56.

As in Examples 50 to 56, the coordinates of reference points P5 to P8 with respect to the center C1 were measured. Then, in the first direction D1 and the second direction D2, the deviation between the measured coordinates of the reference points P5 to P8 and the ideal coordinates of the reference points P5 to P8 was calculated. The calculation results are shown in the "P5" column, "P6" column, "P7" column and "P8" column of FIG. 33 . The unit of the numerical value is μm.

Further, as in Examples 50 to 56, the coordinates of the through hole 56 with respect to the center C1 were measured. The number of through holes 56 measured is 15. Subsequently, the maximum value of the distance between the measured coordinates of the through hole 56 and the coordinates of the ideal through hole 56 was calculated. The calculation results are shown in the column of "PPA" in FIG. 33 .

As shown in FIGS. 32 and 33 , when the absolute values of the deviations of the coordinates of the reference points P5 to P8 in the first direction D1 and the second direction D2 were all 3.0 μm or less, the PPA was 3.0 μm or less. On the other hand, when at least one of the absolute values of the deviation amounts of the coordinates of the marks M1 to M4 in the first direction D1 and the second direction D2 exceeded 3.0 µm, PPA exceeded 3.0 µm.

Claims (20)

A method for manufacturing a mask,
The mask has first and second ends facing each other in a first direction, and an intermediate portion located between the first and second ends and including a group of through holes;
The manufacturing method,
An intermediate portion forming step of forming an outer edge of the intermediate portion and the group of through holes in an original substrate;
a first end forming step of forming an outer edge of the first end on the original substrate;
a second end forming step for forming an outer edge of the second end on the original substrate;
The intermediate portion forming step includes a process of exposing a resist layer on the original substrate using a first exposure mask, and a process of etching the original substrate through the exposed and developed resist layer,
The first end forming step,
A process of exposing a resist layer on the original substrate using a second exposure mask and a process of etching the original substrate through the exposed and developed resist layer, or
Including a process of processing the original substrate using a laser,
manufacturing method. The method of claim 1, wherein the second end forming step,
A process of exposing a resist layer on the original substrate using a third exposure mask and a process of etching the original substrate through the exposed and developed resist layer, or
Including a process of processing the original substrate using a laser,
manufacturing method. The method of claim 1 or 2, wherein the first exposure mask has a rectangle including a first side and a second side,
The first side is 1250 mm or more,
The second side is 1100 mm or more, the manufacturing method. The manufacturing method according to claim 1, wherein the thickness of the original substrate is 40 µm or less. is a mask,
A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;
Equipped with a group of through holes penetrating the substrate;
In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,
The first side edge portion includes a first step portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;
The dimension of the first stepped portion in the second direction is 1 mm or less,
The first end portion includes a first mark located on the first surface or the second surface. The mask according to claim 5, wherein a dimension of the first stepped portion in the second direction is 2.5 µm or more. The mask according to claim 5 or 6, wherein the first stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction. The mask according to claim 5 or 6, wherein the first stepped portion is an inner stepped portion that is displaced inward in the second direction when facing outward in the first direction. The method of claim 5 or 6, wherein the second side edge portion includes a second stepped portion located at a boundary between the first end portion and the middle portion and displaced in a second direction orthogonal to the first direction,
The mask, wherein a dimension of the second stepped portion in the second direction is 1 mm or less. The mask according to claim 9, wherein the first stepped portion and the second stepped portion are outer stepped portions that are displaced outward in the second direction when facing outward in the first direction. The mask according to claim 9, wherein the first stepped portion and the second stepped portion are inner stepped portions that are displaced inward in the second direction when facing outward in the first direction. The method of claim 9, wherein the first stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction,
The mask, wherein the second stepped portion is an inner stepped portion that is displaced inward in the second direction when facing outward in the first direction. The method according to claim 5 or 6, wherein the intermediate portion includes a first intermediate mark located in a first lateral edge region spreading along the first lateral edge portion,
The mask in which the minimum distance value between the said 1st stepped part and the said 1st intermediate mark in the said 1st direction is 5 mm or less. The mask according to claim 13, wherein a ratio of a dimension of the first stepped portion in the second direction to a distance between the first stepped portion and the first intermediate mark in the first direction is 1.0 or less. . is a mask,
A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;
Equipped with a group of through holes penetrating the substrate;
In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,
A direction in which the first side edge of the first end portion extends is deviated by 0.0007° or more from a direction in which the first side edge portion of the intermediate portion extends;
The first end portion includes a first mark located on the first surface or the second surface. The mask according to claim 15, wherein a direction in which the second side edge of the first end extends is shifted by 0.0007° or more from a direction in which the second side edge of the middle portion extends. is a mask,
A substrate including a first side edge and a second side edge extending in a first direction and including a first side and a second side;
Equipped with a group of through holes penetrating the substrate;
In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,
In plan view, the intermediate portion includes a center coincident with the center of the mask in the first direction and has a dimension of 1250 mm in the first direction;
The first end portion includes a first mark located on the first surface or the second surface. is a mask,
A substrate including a first lateral edge and a second lateral edge extending in a first direction and including a first surface and a second surface;
Equipped with a group of through holes penetrating the substrate;
In plan view, the mask has first and second ends that face each other in the first direction, and an intermediate portion located between the first and second ends and including the through hole group,
The first side edge portion includes a first step portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;
The first stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction,
The dimension of the first stepped portion in the second direction is 10 μm or more,
The second side edge portion includes a second stepped portion disposed at a boundary between the first end portion and the intermediate portion and displaced in a second direction orthogonal to the first direction;
The second stepped portion is an outer stepped portion that is displaced outward in the second direction when facing outward in the first direction;
The dimension of the second stepped portion in the second direction is 10 μm or more,
The first end portion includes a first mark located on the first surface or the second surface. The method according to claim 5 or 6, wherein the intermediate portion includes a first intermediate mark located in a first lateral edge region spreading along the first lateral edge portion,
The mask in which the distance between the said 1st mark and the said 1st intermediate mark in the said 2nd direction is 4 mm or less. The mask according to claim 5 or 6, wherein the substrate has a thickness of 40 µm or less.

Images