KR20220150052A - Optical image sensor integrated display device and its operation method - Google Patents

Abstract

The present invention relates to an optical sensor-integrated display device capable of embodying a display light emitting element and a light detection element sensing the brightness thereof in one single pixel, and an operation method thereof. To achieve the purpose, in the optical sensor-integrated display device in accordance with the present invention, one single pixel (PX) has a structure in which a light detection element (PD) is connected to a first power line (ELVDD), has a light emitting element (OLED) is connected to a second power line (ELVSS), the light detection device (PD) is turned on through a sensing transistor (TP), the light emitting element (OLED) is turned on through the first and second light emitting control transistors (TE1, TE2), and a driving transistor (TD) is connected between the sensing transistor (TP) and the first and second light emitting control transistors (TE1, TE2). Therefore, the present invention can perform both a display mode and an image detection mode through one single pixel, thereby minimizing a performance deterioration in the display.

Description

Optical image sensor integrated display device and its operation method

The present invention relates to an optical sensor-integrated display device capable of realizing a light emitting device for displaying an image of an object in one pixel and a light sensing device for sensing its brightness, and an operating method thereof.

In recent years, display devices such as smart phones and tablet PCs have been utilized in various fields. For example, the display device is manufactured to recognize a user's fingerprint or surrounding environment, or to support various functions such as a scanner function. Accordingly, a display device incorporating an optical image sensor has become common.

A display device according to an example inserts an image sensor pixel between display pixels, selects a display pixel to input data from a row line through a gate driver, and selects an image pixel from which a sensor value is to be read through a sensor driver choose A column line connected to the selected display pixel is driven by the value to be input to the display pixel to input data to the display pixel, and the column line connected to the selected image pixel is driven by the value stored in the image sensor to read the sensor value. pay Therefore, since each image sensor pixel must be connected to a column line independent of the display pixel, additional area is required.

In a display device according to another embodiment, an image sensor pixel is inserted between display pixels, and when a horizontal row line is selected, a display pixel and an image sensor pixel corresponding to the row line are simultaneously selected, and the image sensor pixel is selected in the selected display pixel. A connected column line is driven by a value to be input to a display pixel to input data to the display pixel, and a column line connected to the selected image pixel is driven by a value stored in the image sensor to read the sensor value. Therefore, since each image sensor pixel must be connected to a column line independent of the display pixel, additional area is required.

The above-described display devices require a large amount of additional area when all of the components of the image sensor pixel are integrated into the display pixel. That is, switches for control as well as the photodiode PD must be included, a source-follower transistor for reading a value stored in the photodiode PD is required, and an additional low line for a control signal is required. and an additional column line for reading the value of the photodiode PD is required.

In addition, the above-described display devices include correlated double sampling for compensating for a threshold voltage variation of a source follower transistor and a reset voltage of a photodiode PD for an operation of an image sensor; CDS) is essential. At this time, if the process of compensating the reset voltage of the photodiode (PD) is added, additional complicated control is required, and image pixels must operate at a faster speed than the display to perform correlated double sampling, or correlated double sampling is not performed. Otherwise, there is a problem of obtaining very low image quality.

Accordingly, the inventor of the present specification, in order to solve the above-described problem, an optical sensor implemented as a hybrid pixel capable of performing both display mode and imaging mode for one pixel in a display device An integrated display device was invented.

In addition, the inventors of the present specification optimize the pixel area by sharing components of the display pixel and the image sensor pixel, and obtain a high-quality image through the image sensor operation including the correlated double sampling (CDS) process, A method of operating an optical sensor integrated display device that reduces the number of driving processes and increases a driving speed of a pixel by integrating a reset process of .

The above-mentioned objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned can be understood by the following description, and will be more clearly understood by the examples of the present invention. will be. It will also be readily apparent that the objects and advantages of the present invention may be realized by the means and combinations thereof indicated in the appended claims.

An optical sensor integrated display device according to an embodiment of the present invention can be provided. In the optical sensor integrated display device, a first power line ELVDD is connected to one side of the light sensing element PD in one pixel PX, and a second power line ELVSS is connected to one side of the light emitting element OLED. is connected, first and second light emission control transistors TE1 and TE2 are connected in series between the other side of the light emitting device and the first power line, and the first light emission control transistor and the second light emission control transistor A driving transistor TD is connected therebetween, and a sensing transistor TP is connected between a connection point between the driving transistor and the first emission control transistor and the other side of the light sensing element, and the driving transistor and the second light emission A readout line RO may be connected between the control transistors.

Also, it is possible to provide a method of operating an optical sensor integrated display device according to an embodiment of the present invention. In the method of operating the optical sensor integrated display device, in the display mode, the driving transistor is driven as a light emission (high) signal is applied to the first and second light emission control transistors TE1 and TE2 through the light emission signal line to be turned on. becoming a step; emitting light from the first power line as a first power is supplied through the first light emission control transistor, the driving transistor, and the second light emission control transistor; generating, by the photo-sensing element, a photocharge by receiving light emitted from the light-emitting element; storing the photocharges generated by the photo-sensing device in a storage capacitor connected in parallel with the photo-sensing device between the first power line and the driving transistor; switching from the display mode to the image sensing mode, turning off the first and second light emission control transistors TE1 and TE2, and driving the sensing transistor TP by a sensing signal applied through a sensing signal line; and driving the driving transistor by the voltage of the photo-sensing element and the voltage of the storage capacitor, and outputting a voltage value according to the brightness value of the photo-sensing element through a readout line RO connected to the driving transistor can proceed with

According to an embodiment of the present invention, a hybrid pixel that can acquire an image from the front of the display by introducing an imaging pixel to a display pixel driven by a voltage driving method can provide

In addition, in the present invention, the number of in-pixel TRs is configured to be controlled and readout using only an existing display control signal line, and one column line is introduced. may be reduced or a simultaneous operation of display/imaging may be performed.

In addition, the present invention uses the photodiode-connected transistor of the display pixel as a source-follower transistor of the image sensor pixel operation, and integrates the reset phase in the image acquisition process with the reset process of the display. The number of necessary transistors can be minimized.

In addition, for the hybrid pixel, the source follower transistor is operated by a select signal of a neighboring pixel, a signal of an initial row line, and a signal of a separately added row line, and data I/O may be performed simultaneously with two column lines, or may be performed while changing modes by sharing one column line.

In addition, the present invention can optimize the pixel area by sharing the components of the display pixel and the image sensor pixel.

In addition, according to the present invention, a high-quality image may be obtained through an image sensor operation including a correlated double sampling (CDS) process.

In addition, the present invention has the effect of reducing the number of driving processes and increasing the driving speed of the pixel by integrating the reset process of two operations for display and light sensing.

Effects of the present specification are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

In addition to the above-described effects, the specific effects of the present invention will be described together while describing specific details for carrying out the invention below.

1 is a configuration diagram schematically showing the overall configuration of an optical sensor integrated display device according to an embodiment of the present invention.
2 is a circuit diagram illustrating the configuration of one pixel in the optical sensor integrated display device according to the first embodiment of the present invention.
3 to 6 are circuit diagrams illustrating an operation in a display mode of an optical sensor integrated display device according to an embodiment of the present invention.
7 is a circuit diagram illustrating the configuration of one pixel in the optical sensor integrated display device according to the second embodiment of the present invention.
8 to 13 are circuit diagrams illustrating an operation in a display mode of an optical sensor integrated display device according to a second exemplary embodiment of the present invention.
14 to 19 are circuit diagrams illustrating an operation in an image sensing mode of an optical sensor integrated display device according to a second embodiment of the present invention.
20A to 20C are diagrams illustrating three methods of turning on the light sensing element PD in the optical sensor integrated display device according to an embodiment of the present invention.
21 is a diagram illustrating a method of configuring a column line of an optical sensor integrated display device according to an embodiment of the present invention.
22 is an operation flowchart illustrating a method of operating an optical sensor integrated display device according to an embodiment of the present invention.
23A to 23D are graphs showing the intensity of OLED light obtained by simulating the optical sensor integrated display device according to an embodiment of the present invention with 30×30 pixels.

The above-described objects, features and advantages will be described below in detail with reference to the accompanying drawings, and accordingly, those skilled in the art to which the present invention pertains will be able to easily implement the technical idea of the present invention. In describing the present invention, if it is determined that a detailed description of a known technology related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to indicate the same or similar components.

Also, when it is described that a component is “connected”, “coupled” or “connected” to another component, the components may be directly connected or connected to each other, but other components are “interposed” between each component. It is to be understood that “or, each component may be “connected”, “coupled” or “connected” through another component.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used with the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly defined in particular.

Hereinafter, an optical sensor integrated display device and an operating method thereof according to an embodiment of the present invention will be described.

1 is a configuration diagram schematically showing the overall configuration of an optical sensor integrated display device according to an embodiment of the present invention.

Referring to FIG. 1 , an optical sensor integrated display device 100 according to an embodiment of the present invention includes a display panel 20 in which a plurality of pixels PX are defined, including a luminance controller 10 , and the display panel 20 . ) and may include a scan driver 30 , a data driver 40 , a light emission controller 50 , a power supply unit 60 , and a timing controller 70 .

Also, although not illustrated, the optical sensor integrated display device 100 may include a display area, a non-display area, and a bending area.

The luminance controller 10 provides one gamma set selected from among a plurality of gamma sets each including a plurality of gamma data to the data driver 40 , and provides dimming data corresponding to the selected gamma set to the light emission controller 50 . can be provided to

The display panel 20 may include a plurality of pixels PX. In this case, each of the pixels PX may include an organic light emitting diode.

In the display panel 20 , a plurality of gate lines GL and a plurality of data lines DL are disposed to cross each other, and each pixel PX may be defined at each intersection.

That is, in the display panel 20 , a plurality of gate lines GL and data lines DL are formed to cross each other on an organic substrate or a plastic substrate, and a point where the gate lines GL and data lines DL cross each other. Pixels PX corresponding to red (R), green (G), and blue (B) are defined in .

As shown in FIG. 2 , one pixel PX 110 among the one or more pixels has a photo-sensing element PD having one side connected to the first power line ELVDD and one side connected to the second power line ELVSS. It may include a connected light emitting device (OLED). Here, the structure of one pixel PX 110 will be described in more detail with reference to FIG. 2 .

Each of the wires SL and DL of the display panel 20 is connected to the scan driver 30 and the data driver 40 formed outside the display panel 20 . In addition, power supply voltage supply lines ELVDD, Vini, and ELVSS formed in a direction parallel to the data line DL may be further formed on the display panel 20 to be connected to the respective pixels PX.

Also, although not shown, each pixel PX may include at least one organic light emitting diode OLED, a capacitor Cst, a switching thin film transistor, and a driving thin film transistor TD. Here, the organic light emitting diode (OLED) may include a first electrode (hole injection electrode), an organic compound layer, and a second electrode (electron injection electrode).

The organic compound layer may further include various organic layers for efficiently transferring carriers of holes or electrons to the light emitting layer in addition to the light emitting layer in which light is actually emitted. These organic layers may be a hole injection layer and a hole transport layer positioned between the first electrode and the light emitting layer, and an electron injection layer and an electron transport layer positioned between the second electrode and the light emitting layer.

In addition, the switching and driving thin film transistors are connected to the scan line SL, the control signal supply line CL, and the data line DL, and the switching thin film transistors conduct according to the gate voltage input to the scan line SL, At the same time, the data voltage input to the data line DL is transmitted to the driving TFT. The capacitor is connected between the thin film transistor and the power supply wiring, is charged with the data voltage transmitted from the thin film transistor, and is maintained for one frame.

The driving thin film transistor is connected to the power supply line VL and the capacitor, and supplies a drain current corresponding to the gate-source voltage to the organic light emitting diode. Accordingly, the organic light emitting diode emits light by the drain current. Here, the driving thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and the anode electrode of the organic light emitting diode is connected to one electrode of the driving thin film transistor.

The scan driver 30 applies a scan signal to the plurality of scan lines SL. That is, the scan driver 30 sequentially applies the gate voltage to each pixel PX in units of one horizontal line in response to the gate control signal GCS. The scan driver 30 may be implemented as a shift register having a plurality of stages that sequentially output a high-level gate voltage every one horizontal period.

The data driver 40 applies a data signal to the plurality of data lines DL. That is, the data driver 40 receives an image signal of a digital waveform applied from the timing controller 70 and converts it into an analog voltage type data voltage having a grayscale value that the pixel PX can process, and also A data voltage is supplied to each pixel PX through the data line DL in response to the data control signal DCS.

Here, the data driver 40 converts an image signal into a data voltage using a plurality of reference voltages supplied from a reference voltage supply unit (not shown).

The emission control unit 50 applies the emission control signal to the plurality of pixels.

The power supply unit 60 supplies the high power supply voltage ELVDD, the low power supply voltage ELVSS, and the initialization voltage Vini to each pixel. In an embodiment of the present invention, the high power voltage ELVDD may be referred to as a first voltage, the low power voltage ELVSS may be referred to as a second voltage, and the initialization voltage Vini may be referred to as a third voltage.

The timing controller 70 controls the scan driver 30 and the data driver 40 . That is, the timing controller 70 receives an externally applied image signal, a clock signal, and a timing signal such as vertical and horizontal synchronization signals, and generates a gate control signal GCS and a data control signal DCS.

Here, the horizontal sync signal represents the time taken to display one line of the screen, and the vertical sync signal represents the time it takes to display the screen of one frame. In addition, the clock signal is a signal serving as a reference for generating control signals for the gate and each driver.

Meanwhile, although not shown, the timing controller 70 is connected to an external system through a predetermined interface and receives an image related signal and a timing signal output therefrom at high speed without noise. As such an interface, a Low Voltage Differential Signal (LVDS) method or a Transistor-Transistor Logic (TTL) interface method may be used.

2 is a circuit diagram illustrating the configuration of one pixel in the optical sensor integrated display device according to the first embodiment of the present invention.

Referring to FIG. 2 , one pixel 110 according to the first embodiment of the present invention includes a photo-sensing device PD, a light emitting device OLED, first and second light emission control transistors TE1 and TE2; It may include a driving transistor TD, a sensing transistor TP, a storage capacitor Cst, first and second readout lines RO1 and RO2 , and first to fifth selection transistors TS1 to TS5 .

One side of the photo-sensing element PD may be connected to the first power line ELVDD, and the other side may be connected to the sensing transistor TP. The photo-sensing element PD is for generating an electrical signal corresponding to the amount of light received, and may be, for example, a photodiode. According to an embodiment, the photodiode may be one of various types of photodiodes, including a PIN diode, an APD diode, and the like, and the type is not particularly limited. For example, the photo-sensing device PD may include a photodiode connected in parallel to the first power line ELVDD with respect to the storage capacitor Cst connected to the first power line ELVDD. The photo-sensing device PD includes a light receiving unit to which light is incident, and generates photocharges in response to the incident light.

Here, the light emitting device (OLED) may include, for example, an organic light emitting diode. The organic light emitting diode may include a first electrode (hole injection electrode), an organic compound layer, and a second electrode (electron injection electrode).

The organic compound layer may further include various organic layers for efficiently transferring carriers of holes or electrons to the light emitting layer in addition to the light emitting layer in which light is actually emitted. These organic layers may be a hole injection layer and a hole transport layer positioned between the first electrode and the light emitting layer, and an electron injection layer and an electron transport layer positioned between the second electrode and the light emitting layer.

The driving transistor TD is connected between the first emission control transistor TE1 and the second emission control transistor TE2 , and based on the data signal DATA transmitted from the data driver 40 , the light emitting device OLED The current (iD) flowing through can be adjusted. In this case, the luminance of the light emitting device OLED may be adjusted according to the magnitude of the current iD.

The light emission control transistors TE1 and TE2 may be connected to the driving transistor TD and the light emitting device OLED to control light emission of the light emitting device OLED. That is, the first and second light emission control transistors TE1 and TE2 may be connected in series between the other side of the light emitting device OLED and the first power line ELVDD to control the light emission of the light emitting device OLED. have.

Specifically, in response to the emission control signal Emss'n supplied from the emission control line, when the emission control transistors TE1 and TE2 are turned on, the current flowing through the driving transistor TD is transferred to the light emitting device OLED. Thus, the light emitting element OLED can emit light, and when the light emission control transistors TE1 and TE2 are turned off, the current flowing through the driving transistor TD is not transferred to the light emitting element OLED so that the light emitting element OLED emits light. may not

As such, the luminance of the light emitting device OLED may be determined by the amount of the current iD supplied from the driving transistor TD and the time when the light emitting transistors TE1 and TE2 are turned on.

The sensing transistor TP may be connected between the connection point l between the driving transistor TD and the first emission control transistor TE1 and the other side of the photo sensing device PD. That is, in the sensing transistor TP, the first electrode is connected to the other side of the photo-sensing element PD, and the second electrode is connected to the connection point e of the driving transistor TD and the storage capacitor Cst, The third electrode may be connected to the sensing signal line ~(Emss'n).

The photo-sensing element PD may include a photodiode, a first electrode of the photodiode may be connected to the first power line ELVDD, and a second electrode of the photodiode may be connected to a first electrode of the sensing transistor TP. have.

The storage capacitor Cst is connected in parallel with the photo-sensing device PD between the first power line ELVDD and the driving transistor TD, and charges photocharges generated by the photo-sensing device PD.

In the first light emission control transistor TE1 , a first electrode is connected to a second electrode of the driving transistor TD, a second electrode is connected to the other side of the light emitting device OLED, and a third electrode is connected to the second light emission. It may be connected to the third electrode of the control transistor TE2 .

The second light emission control transistor TE2 has a first electrode connected to the first power line ELVDD, a second electrode connected to the first electrode of the driving transistor TD, and a third electrode connected to the first light emission control transistor TE2 It may be connected to the third electrode of the transistor TE1.

The emission signal line Emss'n may be connected to a connection point m between the third electrode of the first emission control transistor TE1 and the third electrode of the second emission control transistor TE2 .

The first readout line RO1 is connected between the fourth selection transistor TS4 and the first power line ELVDD, and the second readout line RO2 is connected to the fifth selection transistor TS5 and the data voltage Vdata. ) is connected to the line. For example, the data voltage Vdata may be connected to the first readout line RO1 , and the high potential voltage VDD may be connected to the second readout line RO2 .

The first selection transistor TS1 has a first electrode connected to the connection point d of the storage capacitor Cst and the driving transistor TD, a second electrode connected to an initial power line, and a third electrode It may be connected to the n-th selection line SEL[n].

The second selection transistor TS2 has a first electrode connected to a second electrode of the first selection transistor TS1 and a second electrode connected to a connection point k between the driving transistor TD and the first emission control transistor TE1. , and the third electrode may be connected to the (n-1)-th selection line SEL[n-1].

The third selection transistor TS3 has a first electrode connected to the second electrode of the sensing transistor TP, and a second electrode connected to the connection point l between the driving transistor TD and the first emission control transistor TE1. and the third electrode may be connected to the (n+1)-th selection line SEL[n+1].

The fourth selection transistor TS4 has a first electrode connected to the connection point g between the driving transistor TD and the second emission control transistor TE2, and a second electrode connected to the readout line RO, The third electrode may be connected to the (n-1)-th selection line SEL[n-1].

The fifth selection transistor TS5 has a first electrode connected to the connection point f of the driving transistor TD and the second emission control transistor TE2, and a second electrode connected to the readout line RO, The three electrodes may be connected to the (n+1)-th selection line SEL[n+1].

3 to 6 are circuit diagrams illustrating an operation in a display mode of an optical sensor integrated display device according to an embodiment of the present invention.

Referring to FIGS. 3 to 6 , the optical sensor integrated display device 100 according to an embodiment of the present invention includes the light emitting operation (Phase 1: emission) of FIG. 3 and the readout operation of FIG. 4 in the display mode ( Phase 2: readout), the reset operation of FIG. 5 (Phase 3: reset), and the data load operation of FIG. 6 (Phase 4: dataload) are executed.

3 to 6 , a scan and an emission signal of a pixel Pn are denoted by S[n] and em[n], respectively. In addition to S[n] and em[n], Pn is controlled by S[n-1], which is the scan signal of the pixel immediately above, and S[n+1], which is the scan signal of the pixel below. That is, this pixel uses one more scan signal to add one more phase for reading data in addition to the existing display operation.

First, in Phase 1 (emission), in the same way as in the existing display pixel, Pn emits light with an intensity corresponding to Vdata and prev while em[n] is high.

That is, in the display mode, the emission operation is turned on by the n-th emission signal em[n], as shown in FIG. 3 , and the third emission of the first emission control transistor TE1 is By applying the emission signal Emss'n to the connection point m between the electrode Gate and the third electrode Gate of the second emission control transistor TE2, the first emission control transistor TE1 and the second emission control transistor TE2 By turning on all of the transistors TE2, a high potential voltage from the first power line ELVDD passes through the first light emission control transistor TE1, the driving transistor TD, and the second light emission control transistor TE2. It is applied to the light emitting device OLED to cause the light emitting device OLED to emit light.

Also, in Phase 2 (readout), em[n] becomes low, preventing the OLED from emitting light, and at the same time S[n-2] becomes high. S[n-2] forms a source follower through TD(M1) and at the same time connects PD to the gate of TD(M1) to generate voltage change Δ. At this time, the output voltage of TD(M1) becomes Vdata, prev+. By reading this, you can find out only the voltage change due to light by subtracting the Vdata and prev values you already know.

That is, the readout operation in the display mode is turned on by the (n-1)-th scan signal S[n-1], as shown in FIG. 4 , The first electrode is connected to the driving transistor TD, the second electrode is connected to the readout line RO, and the third electrode is connected to the (n-1)th selection line SEL[n-1]. The selection transistor TS4 is turned on by receiving a high signal through the (n-1)-th selection line SEL[n-1] connected to the third electrode, the gate electrode. At this time, both the first emission control transistor TE1 and the second emission control transistor TE2 are turned off, and the third selection transistor TS3 is also turned off.

Accordingly, the driving transistor TD is turned on by the charges stored in the photo-sensing element PD and the storage capacitor Cst, and the driving transistor TD generates a voltage change Δ and , accordingly, the output voltage Vdata, prev+Δ is output to the second readout line RO2 via the fourth selection transistor TS4.

Accordingly, only the voltage change Δ caused by light may be determined by subtracting the known values of Vdata and prev from the output voltage of the second readout line RO2 .

Also, in Phase 3 (reset), S[n-1] becomes low and S[n] becomes high, resetting the gate voltage and PD of TD(M1), which is the driver TR.

That is, in the display mode, the reset operation is turned on by the (n)-th scan signal S[n], as shown in FIG. 5 , and the second electrode is initially powered When the first selection transistor TS1 connected to the (Initial) line is turned on, the first selection transistor TS1 connects the storage capacitor Cst and the driving transistor TD through the first electrode to the connection point d ), the gate voltage of the driving transistor TD and the photo-sensing device PD are reset. In this case, in the first selection transistor TS1 , a first electrode is connected to a connection point d between the storage capacitor Cst and the driving transistor TD, a second electrode is connected to an initial power line, and the third The electrode is connected to the nth selection line SEL[n]. In addition, the first emission control transistor TE1 and the second emission control transistor TE2 are both turned off, and the second selection transistor TS2 to the fifth selection transistor TS5 are all turned off. Off) state.

Also, in Phase 4 (data load), S[n] goes low and S[n+1] goes high. This sets the gate voltage and PD of TD(M1) to a voltage lowered by the threshold voltage VTH of TD(M1) from the voltage Vdata input from the data line. Back to phase 1, S[n+1] goes low and em[n] goes high. At this time, the TD(M1) flows a current determined only by the input data as in the conventional display.

That is, the data load operation in the display mode is turned on by the (n+1)-th scan signal S[n+1], as shown in FIG. 6 , The third selection transistor TS3 and the fifth selection transistor TSR connected to the (n+1)-th scan signal S[n+1] are turned on, respectively.

Here, in the third selection transistor TS3 , the first electrode is connected to the second electrode of the sensing transistor TP, and the second electrode is the connection point l between the driving transistor TD and the first emission control transistor TE1 . and the third electrode is connected to the (n+1)-th selection line SEL[n+1].

In addition, in the fifth selection transistor TS5 , the first electrode is connected to the connection point f of the driving transistor TD and the second emission control transistor TE2 , and the second electrode is connected to the first readout line RO1 . connected, and the third electrode is connected to the (n+1)-th selection line SEL[n+1].

Therefore, the driving transistor TD is turned on by the charges stored in the photo-sensing device PD and the storage capacitor Cst, and the voltage applied to the photo-sensing device PD is equal to the driving transistor TD and the second voltage applied to the photo-sensing device PD. The data voltage value is read by being output to the first readout line RO1 through the 5 selection transistor TS5.

7 is a circuit diagram illustrating the configuration of one pixel in the optical sensor integrated display device according to the second embodiment of the present invention.

Referring to FIG. 7 , one pixel 110 according to the second embodiment of the present invention includes a photo-sensing device PD, a light emitting device OLED, first and second light emission control transistors TE1 and TE2; It may include a driving transistor TD, a sensing transistor TP, a storage capacitor Cst, a readout line RO, and first to fifth selection transistors TS1 to TS5.

Here, the light sensing device PD, the light emitting device OLED, the first and second light emission control transistors TE1 and TE2, the driving transistor TD, the sensing transistor TP, the storage capacitor Cst, and the first All of the to fifth selection transistors TS1 to TS5 are the same as the components according to the first exemplary embodiment shown in FIG. 2 , and all functions may be the same.

In the second embodiment of the present invention shown in FIG. 7 , a portion different from the structure of FIG. 2 according to the first embodiment of the present invention will be mainly described with respect to one pixel 110 .

In one pixel 110 according to the second exemplary embodiment of the present invention, one readout line RO is connected to the fourth select transistor TS4 and the fifth select transistor TS5 .

Here, the readout line RO may be connected to the first electrode or the second electrode of the fourth selection transistor TS4 and may be connected to the first electrode or the second electrode of the fifth selection transistor TS5 .

One readout line RO may operate as a data load line in the display mode, and may operate as a data lead line in the image sensing mode.

One pixel 110 according to the second embodiment of the present invention shares a column line with an OLED pixel, and thus can be operated without additional rows and column lines. When the column line is shared, additional timings for reading the image sensor value are solved by sharing the driving transistor (TD/M1).

One pixel 110 according to the second embodiment of the present invention operates in a process of emission → reset → OLED data load → emission in the display operation mode.

In the imaging operation mode, one pixel 110 according to the second embodiment of the present invention operates in a process of PD integration → PD data read → reset → reset read (related double sampling, CDS) → integration process.

Therefore, one pixel 110 according to the second embodiment of the present invention shares the driving transistor TD, so that the threshold variation is compensated for in the display operation, no additional CDS process is required in the imaging operation, and a simplified implementation is possible. will be.

The optical sensor-integrated display device 100 according to the second embodiment of the present invention operates in a display mode for each frame, and operates in an imaging mode, and it is possible to acquire an image during display.

For example, in 60 frames (fps), 59 frames may perform a display mode operation, and 1 frame may perform an imaging mode operation.

8 to 13 are circuit diagrams illustrating an operation in a display mode of an optical sensor integrated display device according to a second exemplary embodiment of the present invention.

8 to 13 , in the display mode of the optical sensor integrated display device according to the second embodiment of the present invention, 1) voltage driving is performed on the column line with OLED data for one frame, and 2) the column The line voltage is determined by an external driver, and 3) the display performs normal operation.

FIG. 8 shows the display mode operation of the n-th row pixel, and shows the operation through a voltage driving column line. The column line is applied with the voltage of the OLED pixel to be input to the pixel by an external voltage driver. Since it is implemented as pMOS, active-low control signals are applied.

One pixel 110 according to the second embodiment of the present invention operates during three signals SEL[n-1], SEL[n], and SEL[n+1]. The SEL [n-1] signal is a period in which the second selection transistor TS2 and the fourth selection transistor TS4 are turned on, and the SEL [n] signal is a period in which the first selection transistor TS1 is turned on, The SEL [n+1] signal is a period in which the third selection transistor TS3 and the fifth selection transistor TS5 are turned on.

One pixel 110 according to the second embodiment of the present invention is turned on while the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned off by the emission signal Emss'n. A back-emission signal (~(Emss'n)) for the sensing transistor TP and the photo-sensing element PD is needed. At this time, since only PMOS can be used, inversion cannot be used.

Accordingly, in the second embodiment of the present invention, 1) SEL signals are used, 2) an initial line is used, or 3) an external line is added to generate a reverse light emitting signal (~(Emss'n)) So, you can use these three things.

9 illustrates that in one pixel 110 according to the second embodiment of the present invention, the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned on by the emission signal Emss'n. Currently, the light emitting device (OLED) is emitting light on the display. The light sensing device PD is integrating the light received from the light emitting device OLED. That is, light emitted from the light emitting device OLED generates charges in the photosensitive device PD, and the generated charges are stored (accumulated) in the storage capacitor Cst.

10 shows that in one pixel 110 according to the second embodiment of the present invention, the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned off and SEL[n-1] is activated. .

The photo-sensing element PD and the storage capacitor Cst are shared to form a voltage at the gate of the driving transistor TD.

The second selection transistor TS2 and the fourth selection transistor TS4 are turned on by the (n-1)-th scan signal S[n-1].

Accordingly, the second selection transistor TS2 having the first electrode connected to the initial voltage line Initial, the driving transistor TD having the second electrode connected to the second selection transistor TS2, and the second electrode are connected to the readout line ( The output voltage is output to the readout line RO via the fourth selection transistor TS4 connected to the RO).

However, the column line is driven by an external voltage driver, and if the external driver is strong enough, the external column line voltage is not affected by the PD voltage in the pixel.

11 shows that in one pixel 110 according to the second embodiment of the present invention, the first selection transistor TS1 is turned on by the (n)-th scan signal S[n]. SEL [n] is activated.

That is, as the first selection transistor TS1 having the second electrode connected to the initial power line Initial is turned on, the first selection transistor TS1 is driven with the storage capacitor Cst through the first electrode As it is connected to the connection point d of the transistor TD, the gate voltage of the driving transistor TD and the photo-sensing device PD are reset. At this time, both the storage capacitor Cst and the photo-sensing device PD are reset to the initial voltage.

12 shows that in one pixel 110 according to the second embodiment of the present invention, S[n] becomes low and S[n+1] becomes high, so that SEL[n+1] is activated.

The gate voltage of the driving transistor TD and the photo-sensing device PD are set to a voltage lowered by the threshold voltage VTH of the driving transistor TD from the voltage Vdata input from the data line.

At this time, the voltage of the column line of both the storage capacitor Cst and the photo-sensing device PD is given as a threshold voltage |threshold|.

Accordingly, OLED data is loaded into the readout line RO via the driving transistor TD and the fifth selection transistor TS5.

FIG. 13 shows that in one pixel 110 according to the second embodiment of the present invention, S[n+1] becomes low and em[n] becomes high, and the light emitting element OLED is turned on. will be.

As the first and second light emission control transistors TE1 and TE2 are turned on by the light emitting signal Emss'n, the light emitting element OLED is formed by the light sensing element PD and the storage capacitor Cst. It emits light corresponding to the display value stored in .

In this case, the photo-sensing device PD receives and integrates the light emitted from the light-emitting device OLED, generates photocharges as the light is received, and the generated charges are stored in the storage capacitor Cst.

14 to 19 are circuit diagrams illustrating an operation in an image sensing mode of an optical sensor integrated display device according to a second embodiment of the present invention.

14 to 19 , in the image sensing mode of the optical sensor integrated display device according to the second embodiment of the present invention, 1) driving a column line with a constant current for one frame, 2) column The line is determined by the PD in the pixel in the selected row, 3) the display is not working.

14 shows an imaging mode operation of an n-th row pixel, and shows an operation through constant current column line driving. The column line is connected to an external constant current driver. Since it is implemented in pMOS, active-low control signals are applied.

One pixel 110 according to the second embodiment of the present invention operates during three signals SEL[n-1], SEL[n], and SEL[n+1]. The SEL [n-1] signal is a period in which the second selection transistor TS2 and the fourth selection transistor TS4 are turned on, and the SEL [n] signal is a period in which the first selection transistor TS1 is turned on, The SEL [n+1] signal is a period in which the third selection transistor TS3 and the fifth selection transistor TS5 are turned on.

One pixel 110 according to the second embodiment of the present invention is turned on while the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned off by the emission signal Emss'n. A back-emission signal (~(Emss'n)) for the sensing transistor TP and the photo-sensing element PD is needed. At this time, since only PMOS can be used, inversion cannot be used.

Accordingly, in the second embodiment of the present invention, 1) SEL signals are used, 2) an initial line is used, or 3) an external line is added to generate a reverse light emitting signal (~(Emss'n)) So, you can use these three things.

15 shows that in one pixel 110 according to the second embodiment of the present invention, the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned on by the emission signal Emss'n. Currently, the light emitting device (OLED) is emitting light on the display. The light sensing device PD is integrating the light received from the light emitting device OLED. That is, light emitted from the light emitting device OLED generates charges in the photosensitive device PD, and the generated charges are stored (accumulated) in the storage capacitor Cst.

16 shows that in one pixel 110 according to the second embodiment of the present invention, the first and second emission control transistors TE1 and TE2 and the light emitting device OLED are turned off and SEL[n-1] is activated. .

The initial voltage is a low voltage almost close to VSS, so the sensing transistor (TP) operates as a pMOS source-follower.

The gate voltage of the sensing transistor TP is determined by the OLED data voltage of the previous frame and the voltage stored in the photo sensing device PD (average according to the cap ratio).

The column line is given by the gate voltage + the threshold voltage of the sensing transistor TP. The threshold voltage is compensated when OLED data is stored in the storage capacitor (Cst). Since the voltage value stored in the previous frame is known, only the value by the photo-sensing device (PD) can be extracted.

The (n-2)-th pixel is performing the OLED data read process of reading the storage capacitor (Cst) value, but since the column line is performing current driving, the (n)-th pixel is the data of the photo-sensing device (PD). It does not affect the output process.

17 shows that in one pixel 110 according to the second embodiment of the present invention, the first selection transistor TS1 is turned on by the (n)-th scan signal S[n]. SEL [n] is activated.

That is, as the first selection transistor TS1 having the second electrode connected to the initial power line Initial is turned on, the first selection transistor TS1 is driven with the storage capacitor Cst through the first electrode As it is connected to the connection point d of the transistor TD, the gate voltage of the driving transistor TD and the photo-sensing device PD are reset. At this time, both the storage capacitor Cst and the photo-sensing device PD are reset to the initial voltage.

18 shows that in one pixel 110 according to the second embodiment of the present invention, S[n] becomes low and S[n+1] becomes high, so that SEL[n+1] is activated.

The gate voltage of the driving transistor TD and the photo-sensing device PD are set to a voltage lowered by the threshold voltage VTH of the driving transistor TD from the voltage Vdata input from the data line.

At this time, the voltage of the column line of both the storage capacitor Cst and the photo-sensing device PD is given as a threshold voltage |threshold|.

The column line voltage is given as the voltage when the (n+2)-th pixel photo-sensing device PD is read, and the current pixel does not affect this process.

19 shows that in one pixel 110 according to the second embodiment of the present invention, S[n+1] becomes low and em[n] becomes high, and the light emitting element OLED is turned on. will be.

As the first and second light emission control transistors TE1 and TE2 are turned on by the light emitting signal Emss'n, the light emitting element OLED is formed by the light sensing element PD and the storage capacitor Cst. It emits light corresponding to the display value stored in .

In this case, the photo-sensing device PD receives and integrates the light emitted from the light-emitting device OLED, generates photocharges as the light is received, and the generated charges are stored in the storage capacitor Cst.

20A to 20C are diagrams illustrating three methods of turning on the light sensing element PD in the optical sensor integrated display device according to an embodiment of the present invention.

20A to 20C , in the optical sensor integrated display device 100 according to the embodiment of the present invention, since only pMOS is used for display, the reverse light emission signal (~(Emss'n)) is converted to the light emission signal Emss' It cannot be made from n), so it is necessary to apply a separate signal according to the following three methods.

FIG. 20A shows generation of a back-emission signal (~(Emss'n)) by an OR operation of S[n-1], S[n], and S[n+1]. That is, by ORing the low signal of S[n-1], the low signal of S[n], and the low signal of S[n+1], the OLED[n-2], OLED[n-1], OLED[n] to generate a low-light back-emitting signal (~(Emss'n)) for the time period.

20B illustrates the application of the light emitting signal Emss'n through the initialization voltage line Init line to the gate electrode of the sensing transistor TP. That is, an initialization voltage line (Init line) is connected to the gate electrode of the sensing transistor TP and used as a supply line of the reverse light emission signal (~(Emss'n)). In this case, the back light emission signal ~(Emss'n) maintains a low signal while the light emission signal Emss'n is applied. The initialization voltage line (Init line) originally serves to supply a low voltage during pixel reset, but in the present invention, it maintains a low state only while the reverse light emitting signal (~(Emss'n)) is supplied. .

20C shows that a separate low signal line is connected to the gate electrode of the sensing transistor TP, and a low signal is applied through the separate low signal line.

21 is a diagram illustrating a method of configuring a column line of an optical sensor integrated display device according to an embodiment of the present invention.

Referring to FIG. 21 , the optical sensor integrated display device 100 according to the embodiment of the present invention may use an additional column line (VPD) as shown in (a).

That is, as shown in (a), an additional column line in which S[n+1] TR is connected to the Vdata line and S[n-1] TR is connected to the VDD line can be used. By using this additional column line, display operation and image readout can be performed at the same time every time instead of using display mode and imaging mode separately for each frame.

In addition, as shown in (b), the optical sensor integrated display device 100 according to the embodiment of the present invention may use a shared column line.

That is, as shown in (b), a WR switching element and !WR switching element that can select Vdata and VDD power are connected to the Vo line, and S[n-1] and S[n+1] switching elements are driven here. It is connected to the first electrode of the transistor TD/M1. By using this shared column line, it operates divided in time into display mode frame and imaging mode frame, and operates to acquire an image in a specific frame while operating as a display.

22 is an operation flowchart illustrating a method of operating an optical sensor integrated display device according to a second embodiment of the present invention.

The optical sensor integrated display device 100 according to the second embodiment of the present invention includes a display mode (S910 to S940) in which an OLED emits light in one pixel (PX), and an image for detecting the brightness of light emitted from the OLED. It may operate in an imaging mode (S950 to S960). In this case, one pixel PX may operate in the display mode for at least one frame, for example, several frames, and then operate in the image sensing mode. 22 shows an example in which one pixel PX operates in one display mode and then operates in one image sensing mode. Without limitation, after operating in the display mode for at least one or more frames, the image detection mode may be operated for one frame.

Referring to FIG. 22 , in the optical sensor integrated display device 100 according to the second embodiment of the present invention, first in the display mode, a light emission (high) signal is transmitted through the light emission signal line to the first and second light emission control transistors TE1 , TE2) and is turned on, thereby driving the driving transistor TD (S910).

At this time, the sensing transistor TP connected to the photo sensing element PD does not operate as a reverse light emission (low) signal is applied through the sensing signal line.

Then, as the first power source ELVDD is supplied from the first power line through the first light emission control transistor TE1 , the driving transistor TD, and the second light emission control transistor TE2 , the light emitting element OLED emits light. becomes (S920).

Next, the photo-sensing device PD receives the light emitted from the light-emitting device OLED to generate photocharges (S930).

Then, the photocharge generated by the photo-sensing device PD is stored in the storage capacitor Cst connected in parallel with the photo-sensing device PD between the first power line ELVDD and the driving transistor TD ( S940).

Here, in the display mode, the first and second light emission control transistors TE1 and TE2 are turned off, and the fourth selection transistor TS4 is driven by the (n-1)-th signal SEL[n-1]. Accordingly, the voltages of the photo-sensing device PD and the storage capacitor form a gate voltage of the sensing transistor TP, and a column line may be driven by an external voltage driver.

In addition, in the display mode, the first and second light emission control transistors TE1 and TE2 are turned off, and the first selection transistor TS1 in which the first electrode is connected between the storage capacitor Cst and the driving transistor TD is driven by the n-th signal (SEL[n]) applied through the third electrode, and the initial power (Initial) applied through the second electrode is applied to the storage capacitor (Cst) and the photo-sensing element (PD), , the storage capacitor Cst, and the photo-sensing device PD may be reset by an initial power source Initial applied from the first selection transistor TS1.

In addition, in the display mode, the first and second light emission control transistors TE1 and TE2 are turned off, the first electrode is connected to the connection point of the driving transistor TD and the second light emission control transistor TE2, and the readout ( The fifth selection transistor TS5 having the second electrode connected to the RO) line and the third electrode connected to the (n+1)-th selection line SEL[n+1] is the (n+1)-th signal SEL[ n+1]), the voltage of the storage capacitor Cst and the photo-sensing element PD forms a threshold voltage of a column line, and light is emitted through the readout line RO A data voltage of the device OLED may be loaded.

On the other hand, the optical sensor integrated display device 100 in the image detection mode is switched from the display mode to the image detection mode, the first and second light emission control transistors TE1 and TE2 are turned off, and the detection transistor TP is detected It is driven by the sensing signal applied through the signal line (S950).

At this time, the sensing transistor TP is a transistor driven by the (n-1)-th signal S[n-1] between the photo-sensing element PD and the driving transistor TP, and the n-th signal S[ n]), and a transistor driven by the (n+1)-th signal (S[n+1]) are connected in parallel, and the (n-1)-th signal ( S[n-1]), the n-th signal (S[n]), and the (n+1)-th signal (S[n+1]) may be driven by a sensing signal obtained by OR operation.

Also, in the image sensing mode, the sensing transistor TP may be driven by the sensing signal of the nth initial voltage Init[n] applied through the sensing signal line.

Also, in the image sensing mode, the sensing transistor TP may be driven by a sensing signal applied through a sensing signal line of a separately added row line from the outside.

Then, the driving transistor TD is driven by the voltage of the photo-sensing element PD and the voltage of the storage capacitor Cst, and the photo-sensing element PD is driven through the readout line RO connected to the driving transistor TD. A voltage value according to the brightness value of is output (S960).

In the image sensing mode, a column line may be connected to an external constant current driver.

In the image sensing mode, the first electrode is connected to the initial power supply (Initial) line, the second electrode is connected to the driving transistor TD, and the third electrode is connected to the (n-1)th selection line SEL[n-1]. The second selection transistor TS2 connected to may be driven by the (n−1)th signal SEL[n−1].

In the image sensing mode, the first electrode is connected to the driving transistor TD, the second electrode is connected to the readout line RO, and the third electrode is connected to the (n-1)th selection line SEL[n-1]. The fourth selection transistor TS4 connected to A voltage value may be output to the readout line RO.

In the image sensing mode, the initial power applied to the first electrode of the second selection transistor TS2 is the second power ELVSS, and the gate voltage of the sensing transistor TP is the same as the voltage of the light emitting device of the previous frame and the photosensitive device It can be determined by the voltage stored in A gate voltage and a threshold voltage of the sensing transistor TP may be applied to a column line.

In the image sensing mode, the first electrode is connected to the connection point of the storage capacitor Cst and the driving transistor TD, the second electrode is connected to the initial power line, and the nth selection line SEL[n]) The first selection transistor TS1 to which the third electrode is connected may be driven by the n-th signal SEL[n] applied through the third electrode.

In the image sensing mode, both the storage capacitor Cst and the photo sensing device PD may be reset by the initial power supply Initial applied through the first selection transistor TS1.

In the image sensing mode, the first electrode is connected to the driving transistor TD, the second electrode is connected to the readout line RO, and the third electrode is connected to the (n+1)-th selection line SEL[n+1]. ]), the fifth selection transistor TS5 may be driven by the (n+1)-th signal SEL[n+1] applied through the third electrode.

In the image sensing mode, the voltages of the storage capacitor Cst and the photo-sensing device PD both form a threshold voltage of a column line, and the (n+2)-th pixel is formed through a column line. A voltage of the photo-sensing element may be applied.

In the image sensing mode, the first and second light emission control transistors TE1 and TE2 are turned on by the light emission (high) signal applied through the light emission signal line, and the power stored in the storage capacitor Cst is transferred to the driving transistor TD The light emitting device OLED may be driven as it is applied through .

In the image sensing mode, the photo-sensing device PD receives light emitted from the light-emitting device to generate photocharges, and the storage capacitor Cst stores the photocharges generated from the photo-sensing device PD.

As described above, in the optical sensor integrated display device 100 according to the embodiment of the present invention, the pixel is controlled using only the select signal inside the pixel and data read/load operates by sharing one column line. As shown in FIG. 23 , a simulation result as shown in FIG. 23 can be obtained. 23A to 23D are graphs showing the intensity of OLED light obtained by simulating the optical sensor integrated display device according to an embodiment of the present invention with 30×30 pixels.

23A is a graph showing the intensity of light when light of a fingerprint pattern is irradiated to the photo-sensing device (PD) in a 30 by 30 pixel array. The closer to black, the stronger light is irradiated to the photo-sensing element PD.

23B is a graph illustrating voltage data stored in a storage capacitor Cst of a pixel to which light is irradiated. The closer to black, the higher the voltage is input to the display as data, and light is generated from the light emitting device (OLED) corresponding to the stored voltage.

23C shows a voltage value of a column line in the data readout mode of the photosensitive device PD. The threshold voltage of the driving transistor TD, which is a source-follower transistor, was compensated for in the previous display mode during data readout of the photo-sensing device PD, and the voltage of the column line corresponds to the display data stored in the storage capacitor Cst of the pixel and the photo-sensing device. Appears as the sum of the values stored in the device PD. Data input for pixel display operation is a known value, and it is simple to subtract it from the measured column line voltage.

23D shows the result of subtracting the display data voltage of the previous frame from the column line voltage of FIG. 23C. Although the overall voltage swing is small, it can be seen that an output signal proportional to the input light intensity is obtained.

As described above, according to the present invention, it is possible to realize an optical sensor integrated display device implemented as a hybrid pixel capable of performing both display mode and imaging mode for one pixel in the display device. have.

In addition, according to the present invention, the pixel area is optimized by sharing the components of the display pixel and the image sensor pixel, and a high-quality image is obtained through the image sensor operation including the correlated double sampling (CDS) process, and By integrating a reset process, it is possible to implement a method of operating an optical sensor integrated display device that reduces the number of driving processes and increases a driving speed of a pixel.

Accordingly, the optical sensor integrated display device and the operating method thereof according to the embodiment of the present invention can improve product reliability by minimizing degradation of display performance.

As described above, the present invention has been described with reference to the illustrated drawings, but the present invention is not limited by the embodiments and drawings disclosed in the present specification. It is obvious that variations can be made. In addition, although the effects according to the configuration of the present invention are not explicitly described and described while describing the embodiments of the present invention, it is natural that the effects predictable by the configuration should also be recognized.

100: optical sensor integrated display device 10: luminance control unit
20: display panel 30: scan driver
40: data driving unit 50: light emission control unit
60: power unit 70: timing control unit
PX: pixel 110: present invention pixel
PD: light sensing element TE1, TE2: light emission control transistor
TD: drive transistor TP: sense transistor
Cst: storage capacitors RO, RO1, RO2: readout line
TS1~TS5 : Selection transistor OLED : Light emitting element

Claims (23)

at least one pixel,
One pixel among the one or more pixels,
a photo-sensing element having one side connected to the first power line;
a light emitting device having one side connected to the second power line;
first and second light emission control transistors connected in series between the other side of the light emitting device and the first power line;
a driving transistor connected between the first emission control transistor and the second emission control transistor;
a sensing transistor connected between a connection point of the driving transistor and the first light emission control transistor and the other side of the light sensing element; and
a readout line connected between the driving transistor and the second emission control transistor;
An optical sensor integrated display device comprising a.
The method of claim 1,
a storage capacitor connected in parallel to the photo-sensing device between the first power line and the driving transistor and charging photocharges generated by the photo-sensing device;
An optical sensor integrated display device further comprising a.
3. The method of claim 2,
a first selection transistor having a first electrode connected to a connection point between the storage capacitor and the driving transistor, a second electrode connected to an initial power line, and a third electrode connected to an nth selection line;
A first electrode is connected to a second electrode of the first selection transistor, a second electrode is connected to a connection point between the driving transistor and the first emission control transistor, and a third electrode is connected to the (n-1)-th selection line. connected second select transistor;
A first electrode is connected to the second electrode of the sensing transistor, a second electrode is connected to a connection point between the driving transistor and the first emission control transistor, and a third electrode is connected to the (n+1)th selection line. 3 select transistors;
A fourth selection transistor having a first electrode connected to a connection point between the driving transistor and the second emission control transistor, a second electrode connected to the readout line, and a third electrode connected to an (n-1)th selection line ; and
A fifth selection transistor having a first electrode connected to a connection point between the driving transistor and the second emission control transistor, a second electrode connected to the readout line, and a third electrode connected to an (n+1)-th selection line ;
An optical sensor integrated display device further comprising a.
The method of claim 1,
The photo-sensing device includes a photodiode,
A first electrode of the photodiode is connected to the first power line, and a second electrode of the photodiode is connected to the first electrode of the sensing transistor.
3. The method of claim 2,
In the sensing transistor, a first electrode is connected to the other side of the light sensing element, a second electrode is connected to a connection point between the driving transistor and the storage capacitor, and a third electrode is connected to a sensing signal line, an optical sensor integrated display Device.
6. The method of claim 5,
In the first emission control transistor, a first electrode is connected to a second electrode of the driving transistor, a second electrode is connected to the other side of the light emitting device, and a third electrode is a third electrode of the second emission control transistor. connected to the electrode,
In the second emission control transistor, a first electrode is connected to the first power line, a second electrode is connected to the first electrode of the driving transistor, and a third electrode is a third electrode of the first emission control transistor. connected to,
and a light emission signal line is connected to a connection point between the third electrode of the first light emission control transistor and the third electrode of the second light emission control transistor.
7. The method of claim 6,
In the display mode, the driving transistor is driven as a light emission (high) signal is applied to the third electrode of the first light emission control transistor and the second light emission control transistor through the light emission signal line and is turned on, and the sensing transistor does not operate as a reverse light emission (low) signal is applied through the detection signal line,
The light emitting device emits light as a first power is supplied from the first power line through the first light emission control transistor, the driving transistor, and the second light emission control transistor,
The photo-sensing element receives the light emitted from the light-emitting element to generate photocharges,
The optical sensor integrated display device, wherein the photocharge generated by the photo-sensing element is stored in the storage capacitor.
8. The method of claim 7,
In the image sensing mode, the sensing transistor is driven by a sensing signal applied through the sensing signal line, and the driving transistor is driven by the voltage of the photo sensing element and the voltage of the storage capacitor,
and outputting a voltage value according to the brightness value of the light sensing element through a readout line connected to the first electrode of the driving transistor.
4. The method of claim 3,
The readout line may include a first readout line connected between the fourth selection transistor and the first power line; and a second readout line connected to the fifth selection transistor and a data voltage line.
9. The method of claim 8,
In the display mode, the driving transistor operates by a voltage applied from the outside through a column line for one frame,
In the image sensing mode, the light sensing element operates by a current applied through a column line during one frame.
An optical sensor integrated display device including at least one pixel in which a photo-sensing element is connected to a first power line, a light-emitting element is connected to a second power line, and a driving transistor is connected between the photo-sensing element and the light-emitting element A method of operation comprising:
(a) driving the driving transistor in a display mode as a light emitting (high) signal is applied to the first and second light emission control transistors through a light emission signal line and turned on;
(b) in the display mode, the light emitting device emits light as a first power is supplied from the first power line through the first light emission control transistor, the driving transistor, and the second light emission control transistor;
(c) in the display mode, generating, by the photo-sensing element, light emitted from the light-emitting element to generate photocharges;
(d) in the display mode, the photocharge generated by the photo-sensing element is stored in a storage capacitor connected in parallel with the photo-sensing element between the first power line and the driving transistor;
(e) in the image sensing mode, the first and second light emission control transistors are turned off, and the sensing transistor is driven by a sensing signal applied through a sensing signal line; and
(f) in the image sensing mode, the driving transistor is driven by the voltage of the photo-sensing element and the voltage of the storage capacitor, and a voltage according to the brightness value of the photo-sensing element through a readout line connected to the driving transistor outputting a value;
A method of operating an optical sensor integrated display device comprising a.
12. The method of claim 11,
In the display mode of step (a), the sensing transistor connected to the light sensing element does not operate as a back light (low) signal is applied through the sensing signal line.
12. The method of claim 11,
In the image sensing mode of step (e), the sensing transistor is a transistor driven by an (n-1)-th signal between the photo-sensing element and the driving transistor, a transistor driven by an n-th signal, and Transistors driven by the (n+1)-th signal are connected in parallel, and a detection signal by OR operation of the (n-1)-th signal, the n-th signal, and the (n+1)-th signal applied through the detection signal line A method of operating an optical sensor integrated display device driven by
12. The method of claim 11,
In the image sensing mode of step (e), the sensing transistor is driven by a sensing signal of an nth initial voltage applied through a sensing signal line.
12. The method of claim 11,
In the image sensing mode of step (e), the sensing transistor is driven by a sensing signal applied through a sensing signal line of a separately added row line from the outside.
12. The method of claim 11,
In the display mode of step (d), the first and second light emission control transistors are turned off, and as the fourth selection transistor is driven by the (n-1)-th signal, the photo-sensing element and the storage A method of operating an optical sensor integrated display device, wherein a voltage of a capacitor forms a gate voltage of the sensing transistor, and a column line is driven by an external voltage driver.
12. The method of claim 11,
In the display mode of step (d), the first and second light emission control transistors are turned off, and a first selection transistor connected with a first electrode between the storage capacitor and the driving transistor is connected through a third electrode It is driven by the applied n-th signal and applies initial power applied through the second electrode to the storage capacitor and the photo-sensing element,
and the storage capacitor and the photo-sensing element are reset by an initial power applied from the first selection transistor.
12. The method of claim 11,
In the display mode of step (d), the first and second light emission control transistors are turned off, a first electrode is connected to a connection point between the driving transistor and the second light emission control transistor, and a first electrode is connected to the readout line. A fifth selection transistor with two electrodes connected and a third electrode connected to the (n+1)-th selection line is driven by the (n+1)-th signal,
voltages of the storage capacitor and the photo-sensing element form a threshold voltage of the column line;
and the data voltage of the light emitting device is loaded through the readout line.
12. The method of claim 11,
In the image sensing mode of step (e), the column line is connected to an external constant current driver,
A second selection transistor having a first electrode connected to an initial power line, a second electrode connected to the driving transistor, and a third electrode connected to an (n-1)-th selection line is driven by an (n-1)-th signal, ,
A fourth selection transistor having a first electrode connected to the driving transistor, a second electrode connected to the read-out line, and a third electrode connected to the (n-1)-th selection line is controlled by the (n-1)-th signal. is driven and outputs a current value according to the brightness value of the photo-sensing element applied through the driving transistor to a readout line,
The initial power applied to the first electrode of the second selection transistor is the second power,
The gate voltage of the sensing transistor is determined by the voltage of the light-emitting device of the previous frame and the voltage stored in the photo-sensing device,
and a gate voltage and a threshold voltage of the sensing transistor are applied to the column line.
12. The method of claim 11,
In the image sensing mode of step (f), a first electrode is connected to a connection point between the storage capacitor and the driving transistor, a second electrode is connected to an initial power line, and a third electrode is connected to an nth selection line The first selection transistor is driven by the nth signal applied through the third electrode,
and the storage capacitor and the photo-sensing element are both reset by the initial power applied through the first selection transistor.
12. The method of claim 11,
In the image sensing mode of step (f), a first electrode is connected to the driving transistor, a second electrode is connected to the readout line, and a third electrode is connected to the (n+1)th selection line. 5 selection transistor is driven by the (n+1)th signal applied through the third electrode,
The voltage of the storage capacitor and the photo-sensing element both form a threshold voltage of a column line, and the voltage of the photo-sensing element of the (n+2)-th pixel is applied through the column line. Operation of an optical sensor-integrated display device Way.
22. The method of claim 21,
After the image sensing mode of step (f), the first and second light emission control transistors are turned on by the light emission (high) signal applied through the light emission signal line,
When the power stored in the storage capacitor is applied through the driving transistor, the light emitting device is driven,
The photo-sensing element receives the light emitted from the light-emitting element to generate photocharges,
and the storage capacitor stores the photocharge generated by the photo-sensing element.
12. The method of claim 11,
and one pixel operates in the display mode for at least one or more frames and then operates in the image sensing mode for one frame.

Images