KR20220145756A - Spectral filter, and image sensor and electronic device including the spectral filter - Google Patents

Abstract

Provided are a spectral filter, and an image sensor and an electronic device each including the spectral filter. The spectral filter includes: a first metal reflection layer and a second metal reflection layer spaced apart from each other; a plurality of cavities disposed between the first metal reflection layer and the second metal reflection layer; and a bandpass filter disposed between the plurality of cavities and selectively transmitting light of a certain wavelength region. Each of the plurality of cavities may have a multi-mode structure having a plurality of central wavelengths.

Description

Spectral filter, and image sensor and electronic device including the same

The present disclosure relates to a spectral filter, an image sensor and an electronic device including the same.

The conventional image sensor classifies the wavelength band into only three sections: red (R), green (G), and blue (B). However, in order to improve color expression accuracy and object recognition performance, the wavelength band is divided into more sections. It is necessary to develop an image sensor having a filter. However, the conventional spectral filter is used for a dedicated camera composed of bulky and complex optical device components, and the module technology of an image sensor integrating the spectral filter on a semiconductor chip is still in the research and development stage.

An exemplary embodiment provides a spectral filter, an image sensor and an electronic device including the same.

In one aspect,

a first metal reflective layer;

a second metal reflective layer provided on the first metal reflective layer;

a plurality of cavities provided between the first and second metal reflective layers and configured to have a plurality of center wavelengths, respectively; and

a bandpass filter provided under the first metal reflective layer or above the second metal reflective layer, the bandpass filter including a plurality of bandpass filters that transmit light of different wavelength ranges, respectively;

The plurality of band filters and the plurality of cavities are provided to correspond to each other,

Each band filter transmits light in a specific wavelength region,

Each of the cavities corresponding to each of the band-pass filters is provided with a spectral filter having a plurality of center wavelengths including a center wavelength within the specific wavelength region.

The bandpass filter may include a color filter or a broadband filter.

The plurality of band filters may be provided to correspond to the plurality of cavities one-to-one.

The plurality of bandpass filters may include a first bandpass filter that transmits light of a first wavelength region, a second bandpass filter that transmits light of a second wavelength region, and a third bandpass filter that transmits light of a third wavelength region. can

The plurality of cavities may include a first cavity corresponding to the first bandpass filter, a second cavity corresponding to the second bandpass filter, and a third cavity corresponding to the third bandpass filter.

the first cavity has a plurality of center wavelengths including a center wavelength within the first wavelength region, the second cavity has a plurality of center wavelengths including a center wavelength within the second wavelength region, and the third cavity may have a plurality of center wavelengths including the center wavelength in the third wavelength region.

The first, second, and third cavities may be configured to have different effective refractive indices.

The first, second, and third cavities may have the same thickness.

Each of the first, second, and third cavities may have a thickness of 200 nm or more and 1000 nm or less.

At least one of the first, second, and third cavities may include a base and at least one pattern disposed in a predetermined shape in the base.

The base of each of the first, second, and third cavities may include titanium oxide.

The base of each of the first, second, and third cavities may include silicon nitride or hafnium oxide. Each of the plurality of bandpass filters may be provided to correspond to the two or more cavities.

The first and second metal reflective layers may include the same metal material or different metal materials.

The first or second metal reflective layer may include Al, Cu, Ag, Au, Ti, W, or TiN. The first or second metal reflective layer may further include poly-Si.

Each of the first and second metal reflective layers may have a thickness of 10 nm to 80 nm.

The spectral filter is provided above or below the plurality of cavities, and may further include a plurality of dielectric layers having different effective refractive indices.

In another aspect,

spectral filter; and

Including; a pixel array for receiving the light transmitted through the spectral filter;

The spectral filter is

a first metal reflective layer;

a second metal reflective layer provided on the first metal reflective layer;

a plurality of cavities provided between the first and second metal reflective layers and configured to have a plurality of center wavelengths, respectively; and

a band-pass filter provided under the first metal reflective layer or an upper part of the second metal reflective layer, the band-pass filter including a plurality of band-pass filters for selectively transmitting light of different wavelength ranges, respectively;

The plurality of band filters and the plurality of cavities are provided to correspond to each other,

Each band filter transmits light in a specific wavelength region,

Each of the cavities corresponding to each of the band-pass filters is provided with an image sensor having a plurality of center wavelengths including a center wavelength within the specific wavelength region.

The pixel array includes a plurality of pixels, and each pixel includes a wiring layer in which a driving circuit is provided and a photodiode provided in the wiring layer.

The plurality of bandpass filters may include a first bandpass filter that transmits light of a first wavelength region, a second bandpass filter that transmits light of a second wavelength region, and a third bandpass filter that transmits light of a third wavelength region. can

The plurality of cavities may include a first cavity corresponding to the first bandpass filter, a second cavity corresponding to the second bandpass filter, and a third cavity corresponding to the third bandpass filter.

the first cavity has a plurality of center wavelengths including a center wavelength within the first wavelength region, the second cavity has a plurality of center wavelengths including a center wavelength within the second wavelength region, and the third cavity may have a plurality of center wavelengths including the center wavelength in the third wavelength region.

The first, second, and third cavities may be configured to have different effective refractive indices.

The first, second, and third cavities may have the same thickness.

At least one of the first, second, and third cavities may include a base and at least one pattern disposed in a predetermined shape in the base.

The spectral filter may further include a plurality of dielectric layers provided above or below the plurality of cavities and having different effective refractive indices.

The image sensor may further include a timing controller, a row decoder, and an output circuit.

In another aspect,

An electronic device including the above-described image sensor is provided.

The electronic device may include a mobile phone, a smart phone, a tablet, a smart tablet, a digital camera, a camcorder, a notebook computer, a television, a smart television, a smart refrigerator, a security camera, a robot, or a medical camera.

According to an exemplary embodiment, a spectral filter having a broadband characteristic capable of detecting only light of a desired wavelength can be implemented by combining a band-pass filter that transmits only light in a specific wavelength region to a multi-mode cavity having a plurality of central wavelengths. have. In addition, by forming all of the multi-mode cavities to have the same thickness, the spectral filter can be manufactured in a simpler process.

According to another exemplary embodiment, an image sensor including the above spectral filter may be provided, and an electronic device including the image sensor may be provided.

1 schematically shows a cross-section of an image sensor according to an exemplary embodiment.
Fig. 2 is a cross-sectional view of a spectral filter according to an exemplary embodiment.
3A to 3C exemplarily show transmission spectra of the first, second, and third band-pass filters in the spectral filter shown in FIG. 2 .
FIG. 4 shows an example of the band pass filter shown in FIG. 2 .
FIG. 5 shows another example of the band pass filter shown in FIG. 2 .
6A to 6C exemplarily show transmission spectra of the first, second, and third cavities in the spectral filter shown in FIG. 2 .
Fig. 7 shows a spectral filter according to another exemplary embodiment.
8A and 8B are simulation results illustrating transmission spectra of the first and second cavities in the spectral filter shown in FIG. 7 .
FIG. 9A is simulation results illustrating absorption spectra detected in the first and second pixels through the spectral filter shown in FIG. 7 .
9B is a simulation result illustrating absorption spectra detected in the third and fourth pixels through the spectral filter shown in FIG. 7 .
FIG. 9C is simulation results illustrating absorption spectra detected in the fifth and sixth pixels through the spectral filter shown in FIG. 7 .
FIG. 9D is a simulation result illustrating absorption spectra detected in the seventh and eighth pixels through the spectral filter shown in FIG. 7 .
Fig. 10 shows a spectral filter according to another exemplary embodiment.
Fig. 11 shows a spectral filter according to another exemplary embodiment.
12 is a block diagram of an image sensor according to an exemplary embodiment.
13 is an exemplary plan view of a spectral filter that may be applied to the image sensor of FIG. 12 .
14 is another exemplary plan view of a spectral filter that may be applied to the image sensor of FIG. 12 .
15 is another exemplary plan view of a spectral filter that may be applied to the image sensor of FIG. 12 .
16 is a block diagram schematically illustrating an electronic device including an image sensor according to example embodiments.
17 is a block diagram schematically illustrating the camera module of FIG. 16 .
18A to 19E are diagrams illustrating various examples of electronic devices to which image sensors are applied according to exemplary embodiments.

The use of the term “above” and similar referential terms may be used in both the singular and the plural. The steps constituting the method may be performed in an appropriate order, and are not necessarily limited to the order described, unless the order is explicitly stated or contrary to the description.

In addition, terms such as “…unit” and “module” described in the specification mean a unit that processes at least one function or operation, which may be implemented as hardware or software, or a combination of hardware and software. .

The connections or connecting members of lines between the components shown in the drawings exemplify functional connections and/or physical or circuit connections, and in an actual device, various functional connections, physical connections, or circuit connections.

The use of all examples or exemplary terms is merely for describing the technical idea in detail, and the scope is not limited by these examples or exemplary terms unless limited by the claims.

1 schematically shows a cross-section of an image sensor 1000 according to an exemplary embodiment. The image sensor 1000 illustrated in FIG. 1 may include, for example, a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD) image sensor.

Referring to FIG. 1 , the image sensor 1000 may include a pixel array 65 and a resonator structure 80 provided on the pixel array. Here, the pixel array 65 may include a plurality of pixels arranged two-dimensionally, and the resonator structure 80 may include a plurality of resonators provided to correspond to the plurality of pixels.

Each pixel of the pixel array 65 may include a photodiode 62 which is a photoelectric conversion element and a driving circuit 52 for driving the photodiode 62 . The photodiode 62 may be provided to be embedded in the semiconductor substrate 61 . As the semiconductor substrate 61, for example, a silicon substrate may be used. However, the present invention is not limited thereto. A wiring layer 51 may be provided on the lower surface of the semiconductor substrate 61 , and a driving circuit 52 such as, for example, a MOSFET may be provided inside the wiring layer 51 .

A resonator structure 80 including a plurality of resonators is provided on the semiconductor substrate 61 . Each resonator may be provided to transmit light of a desired specific wavelength region. Each resonator includes first and second reflective layers 81 and 82 spaced apart from each other, and cavities 83a , 83b , 83c and 83d provided between the first and second reflective layers 81 and 82 . can do. Each of the first and second reflective layers may include, for example, a metal reflective layer or a Bragg reflective layer. Each of the cavities 83a, 83b, 83c, and 83d may be provided to resonate light of a desired specific wavelength region.

A first functional layer 71 may be provided between the upper surface of the semiconductor substrate 61 and the resonator structure 80 . The first functional layer 71 may serve to improve transmittance of light incident to the photodiode 62 through the resonator structure 80 , for example. To this end, the first functional layer 71 may include a dielectric layer or dielectric pattern whose refractive index is adjusted.

A second functional layer 72 may be provided on the upper surface of the resonator structure 80 . The second functional layer 72 may serve to improve transmittance of light incident toward the resonator structure 80 , for example. To this end, the second functional layer 72 may include a dielectric layer or dielectric pattern whose refractive index is adjusted. A third functional layer 90 may be further provided on the upper surface of the second functional layer 72 . The third functional layer 90 may include, for example, an antireflection layer, a focusing lens, a color filter, a short wavelength absorption filter, or a long wavelength cutoff filter. However, this is merely exemplary.

At least one of the above-described first, second, and third functional layers 71 , 72 , and 90 may constitute a spectral filter to be described later together with the resonator structure 80 . Hereinafter, a spectral filter according to an exemplary embodiment will be described in detail.

Hereinafter, spectral filters according to exemplary embodiments that may be employed in the image sensor 1000 will be described in detail. Spectral filters according to the described exemplary embodiment may detect light in a wavelength range of approximately 350 nm to 1000 nm or a wavelength range of approximately 350 nm to 1500 nm, for example. However, the present invention is not limited thereto.

2 shows a cross-sectional view of a spectral filter 1100 according to an exemplary embodiment. FIG. 2 exemplarily illustrates a case in which light in the first, second, and third wavelength regions is incident on the spectral filter 1100 . Here, the first wavelength region includes first, first' and first” wavelengths (λ ₁ , λ ₁ ', λ ₁ ”), and the second, second, and second” wavelengths of the second wavelength region. (λ ₂ , λ ₂ ′, λ ₂ ”), and the third wavelength region includes third, third’, and third” wavelengths (λ ₃ , λ ₃ ′, λ ₃ ”).

Referring to FIG. 2 , the spectral filter 1100 may include a plurality of unit filters 111 , 112 , and 113 arranged in a two-dimensional form. A pixel array 4100 including a plurality of pixels 101 , 102 , and 103 corresponding to the plurality of unit filters 111 , 112 , and 113 may be provided under the spectral filter 1100 . In FIG. 2 , three first, second, and third unit filters 111 , 112 , and 113 and three first, second and third pixels 101 , 102 and 103 are illustratively shown.

The first, second, and third unit filters 111 , 112 , and 113 may be substantially disposed on the same plane, but are not limited thereto. The first unit filter 111 may have a center wavelength of the first wavelength region. For example, the first wavelength region may have a wavelength range of, for example, approximately 350 nm to 500 nm. However, in addition to this, the first wavelength region may have various wavelength ranges according to design conditions.

The second unit filter 112 may have a center wavelength of the second wavelength region. The second wavelength region may be a longer wavelength region than the first wavelength region. For example, the second wavelength region may have a wavelength range of, for example, approximately 500 nm to 650 nm, but this is exemplary only. The third unit filter 113 may have a center wavelength of the third wavelength region. The third wavelength region may be a longer wavelength region than the second wavelength region. For example, the third wavelength region may have a wavelength range of, for example, approximately 650 nm to 800 nm, but this is merely exemplary.

The first, second, and third unit filters 111 , 112 , and 113 may include a resonator 140 and a bandpass filter 150 provided on the resonator 140 . The resonator 140 may include first, second, and third cavities 141 , 142 , and 143 , and the bandpass filter 150 may include first, second, and third bandpass filters 151 , 152 and 153 .

The resonator 140 may have a Fabry-Perot structure. Specifically, the resonator 140 includes first and second metal reflective layers 131 and 132 spaced apart from each other, and first, second, and third cavities 141 , 142 , and 143 provided between the first and second metal reflective layers 131 and 132 . ) may be included. Here, each of the first, second, and third cavities 141 , 142 , and 143 may have a multi-mode cavity structure having a plurality of center wavelengths, as will be described later.

When light passes through the second metal reflective layer 132 and enters each cavity 141 , 142 , 143 , the light reciprocates between the first and second metal reflective layers 131 and 132 inside each cavity 141 , 142 , 143 , and constructive interference in this process and destructive interference. In addition, light having specific central wavelengths satisfying the constructive interference condition in each of the cavities 141 , 142 , and 143 passes through the first metal reflective layer 131 and is incident on each of the pixels 101 , 102 , and 103 of the pixel array 4100 .

A lower dielectric layer 170 may be further provided between the resonator 140 and the pixel array 4100 , and an upper dielectric layer 180 may be further provided between the resonator 140 and the bandpass filter 150 . The lower and upper dielectric layers may include a transparent dielectric material that enhances the transmittance of the central wavelength. The lower and upper dielectric layers 170 and 180 may include, for example, but not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high index polymer.

The first unit filter 111 includes a first cavity 141 provided between the first and second metal reflective layers 131 and 132 , and a first bandpass filter 151 provided above the first cavity 141 . can do. The second unit filter 112 includes a second cavity 142 provided between the first and second metal reflective layers 131 and 132 , and a second bandpass filter 152 provided above the second cavity 142 . can do. The third unit filter 113 includes a third cavity 143 provided between the first and second metal reflective layers 131 and 132 , and a third bandpass filter 153 provided above the third cavity !43 . may include

The first, second, and third bandpass filters 151 , 152 , and 153 may transmit only light of a specific wavelength region and block light of other wavelength regions, respectively. 3A to 3C exemplarily show transmission spectra of the first, second, and third band filters 151 , 152 , and 153 . FIG. 3A shows a transmission spectrum of the first bandpass filter 151, and the first bandpass filter 151 may transmit only light in the first wavelength region. FIG. 3B shows a transmission spectrum of the second bandpass filter 152, and the second bandpass filter 152 may transmit only light in the second wavelength region. 3C shows the transmission spectrum of the third bandpass filter 153, the third bandpass filter 153 may transmit only light in the third wavelength region.

In the spectral filter 1100 illustrated in FIG. 2 , when light of the first, second, and third wavelength ranges is incident on the band-transmission filter 150 , the first, first', and first Light of "wavelengths (λ ₁ , λ ₁ ', λ ₁ ”) is transmitted through the first bandpass filter 151. And, the second, second', and second” wavelengths (λ ₂ ) in the second wavelength region. , λ ₂ ', λ ₂ ”) light passes through the second bandpass filter 152, and the third, third ', and third" wavelengths (λ ₃ , λ ₃ ', λ ₃ ”) within the third wavelength region. ) is transmitted through the third band filter 153 .

For example, a color filter may be used as the band-pass filter 150 . This color filter may be, for example, a color filter commonly applied to a color display device such as a liquid crystal display device or an organic light emitting display device. In this case, the first bandpass filter 151 may be a blue color filter, the second bandpass filter 152 may be a green color filter, and the third bandpass filter 153 may be a red color filter. .

As the band pass filter 150 , a broad band pass filter may be used in addition to the above-described color filter. In this case, the first, second, and third bandpass filters 151 , 152 , and 153 may be first, second, and third wideband filters. Here, each of the first, second, and third broadband filters may have, for example, a multi-cavity structure or a metal mirror structure.

4 shows an example of a wideband filter. Referring to FIG. 4 , the broadband filter 2510 includes a plurality of reflective layers 2513 , 2514 , and 2515 spaced apart from each other, and a plurality of cavities 2511,2512 provided between the reflective layers 2513 , 2514 , and 2515 . ) may be included. In FIG. 4 , three reflective layers 2513 , 2514 , and 2515 and two cavities 2511,2512 are exemplarily shown, but the present invention is not limited thereto. ) can be variously modified.

The first, second and third reflective layers 2513, 2514, and 2515 are disposed to be spaced apart from each other, and a first cavity 2511 is provided between the first and second reflective layers 2513 and 2514, and the second and A second cavity 2512 is provided between the third reflective layers 2514 and 2515 .

Each of the first and second cavities 2511,2512 may include a material having a predetermined refractive index. In addition, each of the first and second cavities 2511,2512 may include two or more materials having different refractive indices.

Each of the first, second, and third reflective layers 2513 , 2514 , and 2515 may be a Bragg reflective layer. Here, the Bragg reflective layer may be a distributed Bragg reflector (DBR). Each of the first, second, and third reflective layers 2513 , 2514 , and 2515 may have, for example, a structure in which a plurality of material layers having different refractive indices are alternately stacked.

5 shows another example of a wideband filter. Referring to FIG. 5 , the broadband filter 2520 includes first and second metal mirror layers 2522 and 2523 spaced apart from each other and provided between the first and second metal mirror layers 2522 and 2523 . A cavity 2521 may be included.

Referring back to FIG. 2 , first, second, and third cavities 141 , 142 , and 143 may be provided between the first and second metal reflective layers 131 and 132 . The first and second metal reflective layers 131 and 132 may include a metal material capable of reflecting light of a predetermined wavelength region. The first and second metal reflective layers 131 and 132 may include, for example, Al, Cu, Ag, Au, Ti, W, or TiN, but is not limited thereto. The first and second metal reflective layers 131 and 132 may further include poly-Si.

Both the first and second metal reflective layers 131 and 132 may include the same metal material. As a specific example, both the first and second metal reflective layers 131 and 132 may include Al. Alternatively, both the first and second metal reflective layers 131 and 132 may include Cu. Also, the first and second metal reflective layers 131 and 132 may include different metal materials. As a specific example, the first metal reflective layer 131 may include Cu, and the second metal reflective layer 132 may include Au. However, this is merely exemplary.

The first and second metal reflective layers 131 and 132 may be provided to have a thickness of about several tens of nm, but are not limited thereto. As a specific example, the first and second metal reflective layers 131 and 132 may each have a thickness of about 10 nm to about 80 nm.

Each of the first, second, and third cavities 141 , 142 , and 143 may have a multi-mode cavity structure having a plurality of center wavelengths. As described above, in order to implement a multi-mode cavity structure, each of the first, second, and third cavities 141 , 142 , and 143 needs to be formed to be thicker than a predetermined thickness. The first, second, and third cavities 141 , 142 , and 143 may be formed to have the same thickness as each other. The first, second, and third cavities 141 , 142 , and 143 may have different effective refractive indices to have different center wavelengths.

The first, second and third cavities 141 , 142 and 143 may include, for example, silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide, although these are merely exemplary and may include a variety of other dielectric materials. have.

The first cavity 141 may include a base 140a. In addition, the first cavity 141 may further include at least one first pattern 141a disposed in a predetermined shape in the base 140a and including a dielectric material different from that of the base 140a. The effective refractive index of the first cavity 141 may be determined by the content of the base material, the first pattern material, and the first pattern material.

For example, the base 140a of the first cavity 141 may include titanium oxide. The base 140a of the first cavity 141 may include silicon nitride or hafnium oxide. However, this is merely exemplary.

As a specific example, in the first cavity 141 , the base 140a may include titanium oxide, and the first pattern 141a may include silicon oxide. However, this is merely exemplary, and the base 140a may include silicon oxide and the first pattern 141a may include titanium oxide.

The first cavity 141 may be formed to have a predetermined thickness or more to implement a multi-mode. For example, the first cavity may have a thickness of about 200 nm or more and 1000 nm or less. For example, the first cavity may have a thickness of about 250 nm or more and 700 nm or less. However, the present invention is not limited thereto.

The second cavity 142 may include a base 140a and at least one second pattern 142a disposed in a predetermined shape in the base 140a. The second cavity 142 may be provided to have an effective refractive index different from that of the first cavity 141 so as to have different center wavelengths from the first cavity 141 . The effective refractive index of the second cavity 142 may be determined by the content of the base material, the second pattern material, and the second pattern material. The second pattern 142a may include the same material as the first pattern 141a. In this case, the content of the second pattern material may be different from the content of the first pattern material. Meanwhile, the second pattern 142a may include a material different from that of the first pattern 141a. Like the first cavity 141 , the second cavity 142 may be formed to have a predetermined thickness or more to implement a multi-mode.

The third cavity 143 may include a base 140a and at least one third pattern 143a disposed in a predetermined shape in the base 140a. The third cavity 143 may be provided to have an effective refractive index different from that of the first and second cavities 141 and 142 so as to have different center wavelengths from those of the first and second cavities 141 and 142 . The effective refractive index of the third cavity 143 may be determined by the content of the base material, the third pattern material, and the third pattern material. The third pattern 143a may include the same material as the first and second patterns 141a and 142a. In this case, the content of the third pattern material may be different from the content of the first and second pattern materials. Meanwhile, the third pattern 143a may include a material different from that of the first or second patterns 141a and 142a.

Like the first and second cavities 141 and 142 , the third cavity 143 may be formed to have a predetermined thickness or more to implement a multi-mode. The first, second, and third cavities 141 , 142 , and 143 may have the same thickness. For example, the first, second, and third cavities 141 , 142 , and 143 may have a thickness of about 200 nm or more and 1000 nm or less (eg, about 250 nm or more and 700 nm or less).

6A to 6C exemplarily show transmission spectra of the first, second, and third cavities 141 , 142 , and 143 . 6A to 6C exemplarily show a case where each of the first, second, and third cavities 141 , 142 , and 143 has three center wavelengths. However, the present invention is not limited thereto, and each of the first, second, and third cavities 141 , 142 , and 143 may be provided to have two or four or more central wavelengths by adjusting the thickness and effective refractive index thereof.

6A shows a transmission spectrum of the first cavity 141, the first cavity 141 may have first, second, and third wavelengths (λ ₁ , λ ₂ , λ ₃ ) as central wavelengths. have. Here, the first, second, and third wavelengths λ ₁ , λ ₂ , and λ ₃ may be in the first, second, and third wavelength ranges, respectively.

FIG. 6B shows a transmission spectrum of the second cavity 142, wherein the second cavity 142 transmits first ', second' and third wavelengths (λ ₁ ', λ ₂ ', λ ₃ '). can have central wavelengths. The first, second, and third wavelengths (λ ₁ ', λ ₂ ', λ ₃ ') are respectively spaced apart from the first, second, and third wavelengths (λ ₁ , λ ₂ , λ ₃ ). It may be spaced apart, but is not necessarily limited thereto. The first, second, and third wavelengths λ ₁ ′, λ ₂ ′, and λ ₃ ′ may be in the first, second, and third wavelength regions, respectively.

FIG. 6c shows a transmission spectrum of the third cavity 143, wherein the third cavity 143 transmits first", second" and third" wavelengths (λ ₁ ″, λ ₂ ″, λ ₃ ″). center wavelengths. The first", second" and third" wavelengths (λ ₁ ”, λ ₂ ”, λ ₃ ”) are respectively the first ', second' and third' wavelengths (λ _{1 )} . ', λ ₂ ', λ ₃ ') may be spaced apart from each other at a predetermined interval, but is not limited thereto. These first", second" and third" wavelengths (λ ₁ ″, λ ₂ ″, λ ₃ ″) may be in the first, second and third wavelength regions, respectively.

6A to 6C, each of the first, second and third cavities 141, 142, 143 may implement a multi-mode having a plurality of center wavelengths, and the first, second and third cavities 141, 142, 143 are By having different effective refractive indices, it is possible to have different center wavelengths.

As described above, in the spectral filter 1100 illustrated in FIG. 2 , when light of the first, second, and third wavelength regions is incident on the band-transmission filter 150 , the first and second wavelengths within the first wavelength region Light of 1' and first" wavelengths (λ ₁ , λ ₁ ', λ ₁ ”) is transmitted through the first bandpass filter 151. And, the second, second', and second wavelengths within the second wavelength region. Light of "wavelengths (λ ₂ , λ ₂ ', λ ₂ ”) passes through the second bandpass filter 152, and the third, third ', and third" wavelengths (λ ₃ , λ ₃ in the third wavelength region) ', λ ₃ ”) is transmitted through the third band filter 153 .

When light of the first, first ', and first" wavelengths (λ ₁ , λ ₁ ', λ ₁ ”) passing through the first bandpass filter 151 is incident into the first cavity 141 , the first wavelength λ Only light of ₁ ) may be emitted from the first cavity 141 and may be incident on the first pixel 101. In addition, the second, second', and second" wavelengths ( When light of λ ₂ , λ ₂ ', λ ₂ ”) is incident into the second cavity 142 , only light of the second wavelength λ ₂ is emitted from the second cavity 142 and is incident on the second pixel 102 . can be Then, when the light of the third, third', and third "wavelengths (λ ₃ , λ ₃ ', λ ₃ ″) passing through the third bandpass filter 153 is incident into the third cavity 143 , the third wavelength Only light of (λ ₃ ) may be emitted from the third cavity 143 and may be incident on the third pixel 103. Accordingly, the first, second, and third pixels 101, 102, and 103 are respectively first and second and light of the third wavelength (λ ₁ , λ ₂ , λ ₃ ) can be detected.

According to the present embodiment, by combining the band-transmission filter 150 that transmits only light of a specific wavelength region to the cavities 141 , 142 , and 143 of the multi-mode structure each having a plurality of central wavelengths, it is possible to detect only light of a desired wavelength. A filter 1100 may be implemented. In addition, since the cavities 141 , 142 , and 143 of the multi-mode structure are all formed to have the same thickness, the spectral filter 1100 may be manufactured through a simpler process.

7 illustrates a spectral filter 1200 according to another exemplary embodiment. 7 exemplarily illustrates a case in which light in the first, second, third, and fourth wavelength regions is incident on the spectral filter 1200 . Here, the first wavelength region includes first, first' and first” wavelengths (λ ₁ , λ ₁ ', λ ₁ ”), and the second, second, and second” wavelengths of the second wavelength region. (λ ₂ , λ ₂ ', λ ₂ ”), and the third wavelength region includes third, third ', and third” wavelengths (λ ₃ , λ ₃ ', λ ₃ ”), and a fourth The wavelength region includes fourth, fourth', and fourth” wavelengths (λ ₄ , λ ₄ ′, λ ₄ ”). Hereinafter, different points from the above-described embodiment will be mainly described.

Referring to FIG. 7 , the spectral filter 1200 may include a plurality of unit filters 211 to 218, and below the spectral filter 1200 is a pixel array including a plurality of pixels 101 to 108. 4100) may be provided. FIG. 7 exemplarily shows eight first to eighth unit filters 211 to 218 and eight first to eighth pixels 101 to 108 .

The first and second unit filters 211 and 212 may have a center wavelength of the first wavelength region. For example, the first wavelength region may have a wavelength range of, for example, approximately 350 nm to 500 nm. The third and fourth unit filters 213 and 214 may have a center wavelength of the second wavelength region. For example, the second wavelength region may have a wavelength range of, for example, approximately 500 nm to 650 nm.

The fifth and sixth unit filters 215.216 may have a center wavelength of the third wavelength region. For example, the third wavelength region may have a wavelength range of, for example, approximately 650 nm to 800 nm). The seventh and eighth unit filters 217 and 218 may have a center wavelength of the fourth wavelength region. For example, the fourth wavelength region may have a wavelength range of, for example, approximately 800 nm to 1000 nm or approximately 800 nm to 1500 nm.

The first to eighth unit filters 211 to 218 may include a resonator 260 and a band-pass filter 250 provided in the resonator 260 . The resonator 260 may include first to eighth cavities 261 to 268 provided between the first and second metal reflective layers 231,232 . The bandpass filter 250 may include first to fourth bandpass filters 251 to 254 . A lower dielectric layer 270 may be further provided between the resonator 260 and the pixel array 4100 , and an upper dielectric layer 280 may be further provided between the resonator 260 and the band-pass filter 250 .

Each of the first to eighth cavities 261 to 268 may have a multi-mode structure having a plurality of center wavelengths as described above. To this end, each of the first to eighth cavities 261 to 268 may be formed to have a predetermined thickness or more. Also, the first to eighth cavities 261 to 268 may be provided to have different effective refractive indices to have different central wavelengths.

As the band-pass filter 250 , as described above, a color filter or a wide-band filter may be used. The first to fourth band filters 251 to 254 may transmit light in a specific wavelength region and block light in another wavelength region, respectively.

The first band filter 251 may transmit light in the first wavelength region (eg, approximately 350 nm to 500 nm). The first bandpass filter 251 may be provided to correspond to the first and second cavities 261,262 . The first bandpass filter 251 may be provided above the first and second cavities 261,262 . The second band filter 252 may transmit light in the second wavelength region (eg, approximately 500 nm to 650 nm). The second bandpass filter 252 may be provided to correspond to the third and fourth cavities 263 and 264 . The second bandpass filter 252 may be provided above the third and fourth cavities 263 and 264 .

The third band filter 253 may transmit light in the third wavelength region (eg, approximately 650 nm to 800 nm). The third bandpass filter 253 may be provided to correspond to the fifth and sixth cavities 265 and 266 . The third bandpass filter 253 may be provided above the fifth and sixth cavities 265 and 266 .

The fourth band filter 254 may transmit light in the fourth wavelength region (eg, approximately 800 nm to 1000 nm). The fourth bandpass filter 254 may be provided to correspond to the seventh and eighth cavities 267 and 268 . The fourth bandpass filter 254 may be provided on the seventh and eighth cavities 267 and 268 .

For example, blue, green, and red colors may be used as the first, second, and third bandpass filters 251,252 and 253 , respectively, and a near-infrared (NIR) filter may be used as the fourth bandpass filter 254 . Meanwhile, when the fourth wavelength region has a near-infrared (NIR) wavelength range, it is also possible to use a blue color filter as the fourth band filter 254 .

In the spectral filter 1200 illustrated in FIG. 7 , when light of the first, second, third, and fourth wavelength regions is incident on the band-transmission filter 250 , the first and first ′ in the first wavelength region , first" wavelength (λ ₁ , λ ₁ ', λ ₁ ″) passes through the first bandpass filter 251 and is incident on the first and second cavities 261,262. Here, the first wavelength λ ₁ ) light is emitted from the first cavity 261 and is incident on the first pixel 101 , and the light of the first 'wavelength (λ ₁ ') is emitted from the second cavity 262 to the second pixel 102 . ) is entered into

Light of the second, second', and second "wavelengths (λ ₂ , λ ₂ ', λ ₂ ″) in the second wavelength region passes through the second bandpass filter 252 to the third and fourth cavities 263 and 264 . Here, the light of the second wavelength λ ₂ is emitted from the third cavity 263 and is incident on the third pixel 103, and the light of the second wavelength λ ₂ ′ is emitted from the fourth cavity. It is emitted at 264 and is incident on the fourth pixel 104 .

Light of the third, third ', and third "wavelengths (λ ₃ , λ ₃ ', λ ₃ ”) in the third wavelength region passes through the third bandpass filter 253 to the fifth and sixth cavities 265 and 266 . Here, the light of the third wavelength λ ₃ is emitted from the fifth cavity 265 and is incident on the fifth pixel 105, and the light of the third wavelength λ ₃ ′ is emitted from the sixth cavity. It is emitted from 266 and is incident on the sixth pixel 106 .

Light of the fourth, fourth', and fourth "wavelengths (λ ₄ , λ ₄ ', λ ₄ ″) in the fourth wavelength region passes through the fourth band filter 254 and passes through the seventh and eighth cavities 267 and 268 . Here, the light of the fourth wavelength λ ₄ is emitted from the seventh cavity 267 and is incident on the seventh pixel 107, and the light of the fourth wavelength λ ₄ ′ is emitted from the eighth cavity. It is emitted from 268 and is incident on the eighth pixel 108 .

Hereinafter, simulation results for the spectral filter 1200 shown in FIG. 7 will be described. Here, a Cu layer having a thickness of 30 nm and an Al layer having a thickness of 10 nm were used as the first and second metal reflective layers 231,232, respectively. The first to eighth cavities 261 to 268 were formed to have a thickness of 400 nm.

8A and 8B are simulation results exemplarily showing transmission spectra of the first and second cavities 261,262 in the spectral filter 1200 shown in FIG. 7 . Here, only titanium oxide was formed in the first cavity 261 , and the base of the second cavity 262 was formed of titanium oxide and a pattern was formed of silicon oxide. The content of the pattern in the second cavity 262 was 20%.

8A and 8B , it can be seen that each of the first and second cavities 261,262 has two central wavelengths (specifically, a wavelength in a blue light region and a wavelength in a red light region). Also, it can be seen that the center wavelengths of the second cavity 262 have shifted by a predetermined distance from the center wavelengths of the first cavity 261 .

FIG. 9A is simulation results illustrating absorption spectra detected in the first and second pixels 101 and 102 through the spectral filter 1200 shown in FIG. 7 . Here, a blue color filter is used as the first band filter 251 . Referring to FIG. 9A , it can be seen that wavelengths of the blue light region are detected in the first and second pixels 101 and 102 .

FIG. 9B is a simulation result illustrating absorption spectra detected by the third and fourth pixels 103 and 104 through the spectral filter 1200 shown in FIG. 7 . Here, a green color filter is used as the second band filter 252 . Referring to FIG. 9B , it can be seen that the wavelengths of the green light region are detected in the third and fourth pixels 103 and 104 .

FIG. 9C is simulation results illustrating absorption spectra detected by the fifth and sixth pixels 105 and 106 through the spectral filter 1200 shown in FIG. 7 . Here, a red color filter is used as the third band filter 253 . Referring to FIG. 9C , it can be seen that wavelengths in the red light region are detected in the fifth and sixth pixels 105 and 106 .

FIG. 9D is a simulation result illustrating absorption spectra detected in the seventh and eighth pixels 107 and 108 through the spectral filter 1200 shown in FIG. 7 . Here, a blue color filter is used as the fourth band filter 254 . Referring to FIG. 9D , it can be seen that wavelengths in the near-infrared (NIR) region are detected in the seventh and eighth pixels 107 and 108 .

As described above, according to the present embodiment, for example, the spectral filter 1200 having a broadband characteristic ranging from ultraviolet to near-infrared (NIR) may be implemented. In the above, the case in which the bandpass filter 250 includes four bandpass filters 251 to 254 has been exemplarily described, but the present invention is not limited thereto and the bandpass filter 250 may include various number of bandpass filters. . In addition, although a case in which each of the band filters 251 to 254 is provided corresponding to two cavities has been exemplarily described, the number of cavities corresponding to each of the band filters 251 to 254 is not limited thereto. can be deformed.

Fig. 10 shows a spectral filter 1300 according to another exemplary embodiment.

Referring to FIG. 10 , the spectral filter 1300 may include a plurality of unit filters 311 , 312 , and 313 , and a pixel array 4100 including a plurality of pixels 101 , 102 and 103 is provided under the spectral filter 1300 . can be In FIG. 10 , three first, second, and third unit filters 311 , 312 , and 313 are exemplarily shown.

The first, second, and third unit filters 311 , 312 , and 313 may include a resonator 340 and a band-pass filter 350 provided on the resonator 340 . The resonator 340 may include first, second, and third cavities 341 , 342 , and 343 provided between the first and second metal reflective layers 331 and 332 . The bandpass filter 350 may include first, second, and third bandpass filters 351 , 352 , and 353 . Since the resonator 340 and the bandpass filter 350 have been described above, a description thereof will be omitted.

A lower dielectric layer 370 may be provided between the resonator 340 and the pixel array 4100 , and an upper dielectric layer 380 may be provided between the resonator 340 and the band pass filter 350 . The lower and upper dielectric layers 370 and 380 are for improving the transmittance of the spectral filter 1300 . The lower and upper dielectric layers 370 and 380 may include, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high index polymer. However, this is merely exemplary.

First and second dielectric layers 371 and 372 may be respectively provided below and above the first cavity 341 . The first and second dielectric layers 371 and 372 are for improving the transmittance of the first unit filter 311 . For example, the first and second dielectric layers 371 and 372 may improve transmittance in the first wavelength region.

Each of the first and second dielectric layers 371 and 372 may include dielectric materials having different refractive indices. Specifically, each of the first and second dielectric layers 371 and 372 may include bases 370a and 380a and at least one first pattern 371a and 381a disposed in a predetermined shape in the bases 370a and 380a. . The effective refractive index of each of the first and second dielectric layers 371 and 372 may be determined by the base material, the first pattern material, and contents of the first pattern material.

Third and fourth dielectric layers 372 and 382 may be provided below and above the second cavity 342 , respectively. The third and fourth dielectric layers 372 and 382 are for improving the transmittance of the second unit filter 312 . For example, the third and fourth dielectric layers 372 and 382 may improve transmittance in the second wavelength region. The third and fourth dielectric layers 372 and 382 may have different effective refractive indices from the first and second dielectric layers 371 and 381 . Each of the third and fourth dielectric layers 372 and 382 may include bases 370a and 380a and at least one second pattern 372a and 382a disposed in the bases 370a and 380a in a predetermined shape. The effective refractive index of each of the third and fourth dielectric layers 372 and 382 may be determined by the amounts of the base material, the second pattern material, and the second pattern material.

Fifth and sixth dielectric layers 373 and 383 may be provided below and above the third cavity 343 , respectively. The fifth and sixth dielectric layers 373 and 383 are for improving the transmittance of the third unit filter 313 . For example, the fifth and sixth dielectric layers 373 and 383 may improve transmittance in the third wavelength region. The fifth and sixth dielectric layers 373 and 383 may have different effective refractive indices from the first and second dielectric layers 371 and 381 and the third and fourth dielectric layers 372 and 382 . Each of the fifth and sixth dielectric layers 373 and 383 may include bases 370a and 380a and at least one third pattern 373a and 383a disposed in a predetermined shape in the bases 370a and 380a. The effective refractive index of each of the fifth and sixth dielectric layers 373 and 383 may be determined by contents of the base material, the third pattern material, and the third pattern material.

Fig. 11 shows a spectral filter 1400 according to another exemplary embodiment. The spectral filter 1400 shown in FIG. 11 is the same as the spectral filter 1100 shown in FIG. 2 , except that the band-pass filter 450 is provided under the resonator 440 .

Referring to FIG. 11 , the spectral filter 1400 may include a plurality of unit filters 411 , 412 , and 413 , and a pixel array 4100 including a plurality of pixels 101 , 102 , 103 is provided under the spectral filter 1400 . can be

The first, second, and third unit filters 411 , 412 , and 413 may include a resonator 440 and a band pass filter 450 provided under the resonator 440 . The resonator 440 may include first, second, and third cavities 441 , 442 , and 443 provided between the first and second metal reflective layers 431 and 432 . The bandpass filter 450 may include first, second, and third bandpass filters 451 , 452 , and 453 . Since the resonator 440 and the bandpass filter 450 have been described above, a description thereof will be omitted.

A lower dielectric layer 470 may be provided on a lower portion of the resonator 440 , and an upper dielectric layer 480 may be provided on an upper portion of the resonator 440 . The lower and upper dielectric layers 470 and 480 may be composed of the lower and upper dielectric layers 370 and 380 shown in FIG. 10 in order to improve the transmittance of the spectral filter 1300 .

12 is a schematic block diagram of an image sensor 1000 according to an exemplary embodiment.

12 , the image sensor 1000 may include a spectral filter 9100 , a pixel array 4100 , a timing controller 4010 , a row decoder 4020 , and an output circuit 4030 . The spectral filter 9100 transmits light of different wavelength ranges and includes a plurality of unit filters arranged in two dimensions. The pixel array 4100 includes a plurality of pixels for sensing light having different wavelengths transmitted through a plurality of unit filters. Specifically, the pixel array 4100 includes two-dimensionally arranged pixels along a plurality of rows and columns. The row decoder 4020 selects one row of the pixel array 4100 in response to a row address signal output from the timing controller 4010 . The output circuit 4030 outputs a light sensing signal from a plurality of pixels arranged along a selected row in column units. To this end, the output circuit 4030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 4030 may include a plurality of ADCs respectively disposed for each column between the column decoder and the pixel array 4100 , or one ADC disposed at an output terminal of the column decoder. The timing controller 4010 , the row decoder 4020 , and the output circuit 4030 may be implemented as a single chip or as separate chips. A processor for processing the image signal output through the output circuit 4030 may be implemented as a single chip together with the timing controller 4010 , the row decoder 4020 , and the output circuit 4030 . The pixel array 1100 includes a plurality of pixels for sensing light of different wavelengths, and the arrangement of the pixels may be implemented in various ways.

13 is an exemplary plan view of a spectral filter 9100 that may be applied to the image sensor 1100 of FIG. 12 .

Referring to FIG. 13 , the spectral filter 9100 may include a plurality of filter groups 9110 arranged in a two-dimensional form. Here, each filter group 91110 may include 16 unit filters F1 to F16 arranged in a 4×4 array.

The first and second unit filters F1 and F2 may have central wavelengths UV1 and UV2 in the ultraviolet region, and the third to fifth unit filters F3 to F5 have central wavelengths B1 in the blue light region. ~B3) may have. The sixth to eleventh unit filters F6 to F11 may have central wavelengths G1 to G6 of the green light region, and the twelfth to fourteenth unit filters F12 to F14 may have central wavelengths R1 of the red light region. ~R3). In addition, the fifteenth and sixteenth unit filters F15 and F16 may have center wavelengths NIR1 and NIR2 in the near-infrared region.

14 is another exemplary plan view of a spectral filter 9100 that may be applied to the image sensor of FIG. 12 . 14 is a plan view of one filter group 9120 for convenience.

Referring to FIG. 14 , each filter group 9120 may include nine unit filters F1 to F9 arranged in a 3×3 array form. Here, the first and second unit filters F1 and F2 may have center wavelengths UV1 and UV2 of the ultraviolet region, and the fourth, fifth, and seventh unit filters F4, F5, and F7 may emit blue light. It may have center wavelengths B1 to B3 of the region. The third and sixth unit filters F3 and F6 may have central wavelengths G1 and G2 of the green light region, and the eighth and ninth unit filters F8 and F9 have central wavelengths R1 of the red light region. , R2).

FIG. 15 is another exemplary plan view of a spectral filter 9100 that may be applied to the image sensor of FIG. 12 . 15 is a plan view of one filter group 9130 for convenience.

Referring to FIG. 15 , each filter group 9130 may include 25 unit filters F1 to F25 arranged in a 5×5 array. Here, the first to third unit filters F1 to F3 may have central wavelengths UV1 to UV3 of the ultraviolet region, and the sixth, seventh, eighth, eleventh and twelfth unit filters F6, F7, F8, F11, and F12 may have center wavelengths B1 to B5 of the blue light region. The fourth, fifth, and ninth unit filters F4, F5, and F9 may have central wavelengths G1 to G3 of the green light region, and the tenth, thirteenth, fourteenth, fifteenth, eighteenth and ninth unit filters. The 19 unit filters F10, F13, F14, F15, F18, and F19 may have central wavelengths R1 to R6 of the red light region. In addition, the 20th, 23rd, 24th, and 25th unit filters F20 , F23 , F24 , and F25 may have center wavelengths NIR1 to NIR4 in the near-infrared region.

The image sensor 1000 including the above-described spectral filter may be employed in various high-performance optical devices or high-performance electronic devices. Such electronic devices are, for example, smart phones, mobile phones, cell phones, personal digital assistants (PDA), laptops, PCs, various portable devices, home appliances, security cameras, medical cameras, automobiles, and Internet of Things (IoT). It may be an Internet of Things (IoT) device or other mobile or non-mobile computing device, but is not limited thereto.

In addition to the image sensor 1000 , the electronic device may further include a processor for controlling the image sensor, for example, an application processor (AP), and a plurality of hardware devices by driving an operating system or an application program through the processor. Alternatively, the software components may be controlled, and various data processing and operations may be performed. The processor may further include a graphic processing unit (GPU) and/or an image signal processor. When the processor includes an image signal processor, the image (or image) acquired by the image sensor may be stored and/or output using the processor.

16 is a block diagram illustrating an example of the electronic device ED01 including the image sensor 1000 . Referring to FIG. 16 , in a network environment ED00, the electronic device ED01 communicates with another electronic device ED02 through a first network ED98 (such as a short-range wireless communication network), or a second network ED99. It is possible to communicate with another electronic device ED04 and/or the server ED08 through (a long-distance wireless communication network, etc.). The electronic device ED01 may communicate with the electronic device ED04 through the server ED08. The electronic device ED01 includes a processor ED20, a memory ED30, an input device ED50, an audio output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, and an interface ED77 ), a haptic module (ED79), a camera module (ED80), a power management module (ED88), a battery (ED89), a communication module (ED90), a subscriber identification module (ED96), and/or an antenna module (ED97). can In the electronic device ED01 , some of these components (eg, the display device ED60 ) may be omitted or other components may be added. Some of these components may be implemented as one integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, illuminance sensor, etc.) may be implemented by being embedded in the display device ED60 (display, etc.). In addition, when the image sensor 1000 includes a spectral function, some functions (color sensor, illuminance sensor) of the sensor module may be implemented in the image sensor 1000 itself rather than a separate sensor module.

The processor ED20 may control one or a plurality of other components (hardware, software components, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (eg, a program ED40). , various data processing or operations can be performed. As part of data processing or operation, processor ED20 loads commands and/or data received from other components (sensor module ED76, communication module ED90, etc.) into volatile memory ED32, and The commands and/or data stored in the ED32 may be processed, and the resulting data may be stored in the non-volatile memory ED34. The processor (ED20) includes a main processor (ED21) (central processing unit, application processor, etc.) and a coprocessor (ED23) (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can be operated independently or together. may include The auxiliary processor ED23 may use less power than the main processor ED21 and may perform a specialized function.

The auxiliary processor ED23 operates on behalf of the main processor ED21 while the main processor ED21 is in the inactive state (sleep state), or the main processor ED21 is the main processor while the main processor ED21 is in the active state (the application execution state). Together with the processor ED21, functions and/or states related to some of the components of the electronic device ED01 (display device ED60, sensor module ED76, communication module ED90, etc.) may be controlled. can The auxiliary processor ED23 (image signal processor, communication processor, etc.) may be implemented as a part of other functionally related components (camera module ED80, communication module ED90, etc.).

The memory ED30 may store various data required by components of the electronic device ED01 (such as the processor ED20 and the sensor module ED76). The data may include, for example, input data and/or output data for software (such as a program ED40) and instructions related thereto. The memory ED30 may include a volatile memory ED32 and/or a non-volatile memory ED34. The nonvolatile memory ED32 may include an internal memory ED36 fixedly mounted in the electronic device ED01 and a removable external memory ED38.

The program ED40 may be stored as software in the memory ED30 and may include an operating system ED42, middleware ED44, and/or an application ED46.

The input device ED50 may receive a command and/or data to be used by a component (eg, the processor ED20 ) of the electronic device ED01 from outside the electronic device ED01 (eg, a user). The input device ED50 may include a microphone, a mouse, a keyboard, and/or a digital pen (such as a stylus pen).

The sound output device ED55 may output a sound signal to the outside of the electronic device ED01 . The sound output device ED55 may include a speaker and/or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver may be integrated as a part of the speaker or may be implemented as an independent separate device.

The display device ED60 may visually provide information to the outside of the electronic device ED01. The display device ED60 may include a display, a hologram device, or a projector and a control circuit for controlling the corresponding device. The display device ED60 may include a touch circuitry configured to sense a touch, and/or a sensor circuitry (pressure sensor, etc.) configured to measure the intensity of force generated by the touch.

The audio module ED70 may convert a sound into an electric signal or, conversely, convert an electric signal into a sound. The audio module ED70 obtains a sound through the input device ED50 or other electronic device (electronic device ED02, etc.) directly or wirelessly connected to the sound output device ED55 and/or the electronic device ED01. ) can output sound through the speaker and/or headphones.

The sensor module ED76 detects an operating state (power, temperature, etc.) of the electronic device ED01 or an external environmental state (user state, etc.), and generates an electrical signal and/or data value corresponding to the sensed state. can do. The sensor module ED76 may include a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (Infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and/or an illuminance sensor. It may include a sensor.

The interface ED77 may support one or a plurality of designated protocols that may be used to directly or wirelessly connect the electronic device ED01 with another electronic device (eg, the electronic device ED02). The interface ED77 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and/or an audio interface.

The connection terminal ED78 may include a connector through which the electronic device ED01 may be physically connected to another electronic device (eg, the electronic device ED02 ). The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and/or an audio connector (such as a headphone connector).

The haptic module ED79 may convert an electrical signal into a mechanical stimulus (vibration, movement, etc.) or an electrical stimulus that the user can perceive through tactile or kinesthetic sense. The haptic module ED79 may include a motor, a piezoelectric element, and/or an electrical stimulation device.

The camera module ED80 may capture still images and moving images. The camera module ED80 may include a lens assembly including one or a plurality of lenses, the image sensor 1000 of FIG. 1 , image signal processors, and/or flashes. The lens assembly included in the camera module ED80 may collect light emitted from a subject, which is an image capturing object.

The power management module ED88 may manage power supplied to the electronic device ED01. The power management module ED88 may be implemented as a part of a Power Management Integrated Circuit (PMIC).

The battery ED89 may supply power to components of the electronic device ED01 . The battery ED89 may include a non-rechargeable primary cell, a rechargeable secondary cell, and/or a fuel cell.

Communication module ED90 establishes a direct (wired) communication channel and/or wireless communication channel between the electronic device ED01 and other electronic devices (electronic device ED02, electronic device ED04, server ED08, etc.); and performing communication through an established communication channel. The communication module ED90 operates independently of the processor ED20 (such as an application processor) and may include one or a plurality of communication processors supporting direct communication and/or wireless communication. The communication module ED90 includes a wireless communication module ED92 (a cellular communication module, a short-range wireless communication module, a Global Navigation Satellite System (GNSS, etc.) communication module) and/or a wired communication module ED94 (Local Area Network (LAN) communication). module, power line communication module, etc.). Among these communication modules, the corresponding communication module is a first network (ED98) (a local area communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network (ED99) (a cellular network, the Internet, or a computer network (LAN) , WAN, etc.) through a telecommunication network) and may communicate with other electronic devices. These various types of communication modules may be integrated into one component (single chip, etc.) or implemented as a plurality of components (plural chips) separate from each other. The wireless communication module ED92 uses the subscriber information (such as International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module ED96 within a communication network such as the first network ED98 and/or the second network ED99. can check and authenticate the electronic device ED01.

The antenna module ED97 may transmit or receive signals and/or power to the outside (eg, other electronic devices). The antenna may include a radiator having a conductive pattern formed on a substrate (PCB, etc.). The antenna module ED97 may include one or a plurality of antennas. When a plurality of antennas are included, an antenna suitable for a communication method used in a communication network such as the first network ED98 and/or the second network ED99 is selected from among the plurality of antennas by the communication module ED90. can A signal and/or power may be transmitted or received between the communication module ED90 and another electronic device through the selected antenna. In addition to the antenna, other components (such as an RFIC) may be included as a part of the antenna module ED97.

Some of the components are connected to each other through communication methods between peripheral devices (bus, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), MIPI (Mobile Industry Processor Interface), etc.) and signals (commands, data, etc.) ) are interchangeable.

The command or data may be transmitted or received between the electronic device ED01 and the external electronic device ED04 through the server ED08 connected to the second network ED99. The other electronic devices ED02 and ED04 may be of the same type as or different from those of the electronic device ED01. All or some of the operations performed in the electronic device ED01 may be performed in one or a plurality of other electronic devices ED02, ED04, and ED08. For example, when the electronic device ED01 needs to perform a function or service, part or all of the function or service is performed to one or a plurality of other electronic devices instead of executing the function or service by itself. you can ask to One or a plurality of other electronic devices receiving the request may execute an additional function or service related to the request, and transmit a result of the execution to the electronic device ED01. For this purpose, cloud computing, distributed computing, and/or client-server computing technologies may be used.

17 is a block diagram illustrating the camera module ED80 of FIG. 16 . Referring to FIG. 17 , the camera module ED80 includes a lens assembly CM10, a flash CM20, an image sensor 1000 (such as the image sensor 1000 of FIG. 12 ), an image stabilizer CM40, and a memory CM50. (buffer memory, etc.), and/or an image signal processor (CM60). The lens assembly CM10 may collect light emitted from a subject, which is an image capturing object. The camera module ED80 may include a plurality of lens assemblies CM10. In this case, the camera module ED80 may be a dual camera, a 360 degree camera, or a spherical camera. Some of the plurality of lens assemblies CM10 may have the same lens property (angle of view, focal length, auto focus, F number, optical zoom, etc.) or may have different lens properties. The lens assembly CM10 may include a wide-angle lens or a telephoto lens.

The flash CM20 may emit light used to enhance light emitted or reflected from the subject. The flash CM20 may include one or a plurality of light emitting diodes (RGB (Red-Green-Blue) LED, White LED, Infrared LED, Ultraviolet LED, etc.), and/or a Xenon Lamp. The image sensor 1000 may be the image sensor described with reference to FIG. 1 , and by converting light emitted or reflected from the subject and transmitted through the lens assembly CM10 into an electrical signal, an image corresponding to the subject may be obtained. . The image sensor 1000 may include one or a plurality of sensors selected from image sensors having different properties, such as an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor. Each of the sensors included in the image sensor 1000 may be implemented as a CCD (Charged Coupled Device) sensor and/or a CMOS (Complementary Metal Oxide Semiconductor) sensor.

The image stabilizer CM40 moves one or a plurality of lenses or image sensors 1000 included in the lens assembly CM10 in a specific direction in response to the movement of the camera module ED80 or the electronic device CM01 including the same. Alternatively, by controlling the operating characteristics of the image sensor 1000 (adjustment of read-out timing, etc.), a negative effect due to movement may be compensated. The image stabilizer CM40 detects the movement of the camera module ED80 or the electronic device ED01 using a gyro sensor (not shown) or an acceleration sensor (not shown) disposed inside or outside the camera module ED80. can The image stabilizer CM40 may be optically implemented.

The memory CM50 may store some or all data of an image acquired through the image sensor 1000 for a next image processing operation. For example, when a plurality of images are acquired at high speed, the acquired original data (Bayer-Patterned data, high-resolution data, etc.) is stored in the memory (CM50), only the low-resolution image is displayed, and then selected (user selected, etc.) It can be used to cause the original data of the image to be transmitted to the image signal processor (CM60). The memory CM50 may be integrated into the memory ED30 of the electronic device ED01 or may be configured as a separate memory operated independently.

The image signal processor CM60 may perform image processing on an image acquired through the image sensor 1000 or image data stored in the memory CM50. Image processing includes depth map generation, 3D modeling, panorama generation, feature point extraction, image synthesis, and/or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening) , softening (Softening, etc.) may be included. The image signal processor CM60 may perform control (exposure time control, readout timing control, etc.) on components (such as the image sensor 1000 ) included in the camera module ED80 . The image processed by the image signal processor (CM60) is saved back to the memory (CM50) for further processing or external components of the camera module (ED80) (memory (ED30), display device (ED60), electronic device (ED02) , the electronic device ED04, the server ED08, etc.). The image signal processor CM60 may be integrated into the processor ED20 or may be configured as a separate processor operated independently of the processor ED20. When the image signal processor CM60 is configured with the processor ED20 and a separate processor, the image processed by the image signal processor CM60 is subjected to additional image processing by the processor ED20 and then displayed on the display device ED60. can be displayed through

The electronic device ED01 may include a plurality of camera modules ED80 each having different properties or functions. In this case, one of the plurality of camera modules ED80 may be a wide-angle camera and the other may be a telephoto camera. Similarly, one of the plurality of camera modules ED80 may be a front camera and the other may be a rear camera.

The image sensor 1000 according to the embodiments is a mobile phone or smart phone 5100m shown in Fig. 18(a), a tablet or smart tablet 5200 shown in Fig. 18(b), and Fig. 18(c). It can be applied to the illustrated digital camera or camcorder 5300, the notebook computer 5400 illustrated in FIG. 18(d), or the television or smart television 5500 illustrated in FIG. 18(e). For example, the smart phone 5100m or the smart tablet 5200 may include a plurality of high-resolution cameras each having a high-resolution image sensor mounted thereon. High-resolution cameras may be used to extract depth information of subjects in an image, adjust outfocusing of an image, or automatically identify subjects in an image.

In addition, the image sensor 1000 is a smart refrigerator 5600 shown in Fig. 19 (a), a security camera 5700 shown in Fig. 19 (b), a robot 5800 shown in Fig. 19 (c), Fig. 19(d) may be applied to the medical camera 5900 and the like. For example, the smart refrigerator 5600 may automatically recognize food in the refrigerator using an image sensor, and inform the user of the presence of specific food, the type of food put on or shipped out, and the like to the user through the smartphone. The security camera 5700 may provide an ultra-high-resolution image and may recognize an object or a person in the image even in a dark environment by using high sensitivity. The robot 5800 may provide a high-resolution image by being input at a disaster or industrial site that cannot be directly accessed by humans. The medical camera 5900 may provide a high-resolution image for diagnosis or surgery, and may dynamically adjust a field of view.

Also, the image sensor 1000 may be applied to the vehicle 6000 as shown in FIG. 19(e). The vehicle 6000 may include a plurality of vehicle cameras 6010 , 6020 , 6030 , and 6040 disposed in various positions. Each of the vehicle cameras 6010 , 6020 , 6030 , and 6040 may include an image sensor according to an embodiment. The vehicle 6000 may provide various information about the inside or the surroundings of the vehicle 6000 to the driver by using a plurality of vehicle cameras 6010, 6020, 6030, and 6040, and automatically recognizes objects or people in the image. It can provide information necessary for autonomous driving.

Although the image sensor having the above-described spectral filter and the electronic device including the same have been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those of ordinary skill in the art may perform various modifications and It will be appreciated that other equivalent embodiments are possible. Therefore, the disclosed embodiments are to be considered in an illustrative rather than a restrictive sense. The scope of rights is indicated in the claims rather than the above description, and all differences within the scope of equivalents should be construed as being included in the scope of rights.

101 to 108.. 1st to 8th pixels
111,211,311,411.. first unit filter
112,212,312,412.. second unit filter
113,213,313,413.. 3rd unit filter
214 ~ 218.. 4th ~ 8th unit filter
131,231,331,431.. first metal reflective layer
132,232,332,432.. second metal reflective layer
140,260,340,440.. resonator
141,261,341,441.. first cavity
142,262,342,442.. second cavity
143,263,343,443.. 3rd cavity
144 ~ 148.. 4th ~ 8th cavity
150,250,350,450.. bandpass filter
151,251,351,451.. 1st band filter
152,252,352,452.. second band filter
153,253,353,453.. 3rd band filter
254. 4th band filter
170,270,370,470.. bottom dielectric layer
180,280,380,480.. upper dielectric layer
1000.. image sensor
1100,1200,1300,1400.. Spectral filter
2510.. Wideband filter with multi-cavity structure
2511,512,2521.. Cavity
2513,2514,2515.. Reflective layer
2520.. Broadband filter with metal mirror construction
2522, 2523.. Metal mirror layer
4100.. Pixel Array
4010.. Timing Controller
4020.. Raw Decoder
4030.. Output circuit
5100m.. mobile phone or smartphone
5200.. Tablet or Smart Tablet
5300.. digital camera or camcorder
5400.. Laptop computer
5500.. Television or Smart Television
5600.. Smart Refrigerator
5700.. Security Camera
5800.. Robot
5900.. Medical camera
6000.. vehicle
6010,6020,6030,6040.. car camera

Claims (30)

a first metal reflective layer;
a second metal reflective layer provided on the first metal reflective layer;
a plurality of cavities provided between the first and second metal reflective layers and configured to have a plurality of center wavelengths, respectively; and
a bandpass filter provided under the first metal reflective layer or above the second metal reflective layer, the bandpass filter including a plurality of bandpass filters that transmit light of different wavelength ranges, respectively;
The plurality of band filters and the plurality of cavities are provided to correspond to each other,
Each band filter transmits light in a specific wavelength region,
A spectral filter having a plurality of center wavelengths including a center wavelength within the specific wavelength region, wherein each cavity corresponding to each band filter has a plurality of center wavelengths. The method of claim 1,
The band-pass filter is a spectral filter including a color filter or a broad-band filter. The method of claim 1,
The plurality of bandpass filters are provided to correspond one-to-one to the plurality of cavities. 4. The method of claim 3,
wherein the plurality of band-pass filters include a first band-pass filter that transmits light of a first wavelength region, a second band-pass filter that transmits light of a second wavelength region, and a third band filter that transmits light of a third wavelength region spectral filter. 5. The method of claim 4
The plurality of cavities includes a first cavity corresponding to the first bandpass filter, a second cavity corresponding to the second bandpass filter, and a third cavity corresponding to the third bandpass filter. 6. The method of claim 5,
the first cavity has a plurality of center wavelengths including a center wavelength within the first wavelength region, the second cavity has a plurality of center wavelengths including a center wavelength within the second wavelength region, and the third cavity is a spectral filter having a plurality of center wavelengths including the center wavelength in the third wavelength region. 6. The method of claim 5,
The first, second, and third cavities are configured to have different effective refractive indices. 8. The method of claim 7,
The first, second and third cavities have the same thickness as each other. 9. The method of claim 8,
Each of the first, second, and third cavities has a thickness of 200 nm or more and 1000 nm or less. 8. The method of claim 7,
At least one of the first, second, and third cavities includes a base and at least one pattern disposed within the base in a predetermined shape. 11. The method of claim 10,
Each of the first, second and third cavities is a spectral filter in which the base includes titanium oxide. 11. The method of claim 10,
Each of the first, second and third cavities is a spectral filter in which the base includes silicon nitride or hafnium oxide. The method of claim 1,
A spectral filter provided so that each of the plurality of bandpass filters corresponds to the at least two cavities. The method of claim 1,
The first and second metal reflective layers include the same metal material or different metal materials. 15. The method of claim 14,
The first or second metal reflective layer is a spectral filter comprising Al, Cu, Ag, Au, Ti, W or TiN. 16. The method of claim 15,
The first or second metal reflective layer is a spectral filter further comprising poly-Si. The method of claim 1,
The first and second metal reflective layers each have a thickness of 10 nm to 80 nm. The method of claim 1,
The spectral filter provided above or below the plurality of cavities and further comprising a plurality of dielectric layers having different effective refractive indices. spectral filter; and
Including; a pixel array for receiving the light transmitted through the spectral filter;
The spectral filter is
a first metal reflective layer;
a second metal reflective layer provided on the first metal reflective layer;
a plurality of cavities provided between the first and second metal reflective layers and configured to have a plurality of center wavelengths, respectively; and
a band-transmission filter provided under the first metal reflective layer or above the second metal reflective layer, the band-pass filter including a plurality of band-pass filters that transmit light of different wavelength ranges, respectively;
The plurality of band filters and the plurality of cavities are provided to correspond to each other,
Each band filter transmits light in a specific wavelength region,
Each of the cavities corresponding to the respective band-pass filters has a plurality of center wavelengths including a center wavelength within the specific wavelength region. 20. The method of claim 19,
The pixel array includes a plurality of pixels, and each pixel includes a wiring layer having a driving circuit therein and a photodiode provided in the wiring layer. 21. The method of claim 20,
wherein the plurality of band-pass filters include a first band-pass filter that transmits light of a first wavelength region, a second band-pass filter that transmits light of a second wavelength region, and a third band filter that transmits light of a third wavelength region image sensor. 22. The method of claim 21
The plurality of cavities may include a first cavity corresponding to the first bandpass filter, a second cavity corresponding to the second bandpass filter, and a third cavity corresponding to the third bandpass filter. 23. The method of claim 22,
the first cavity has a plurality of center wavelengths including a center wavelength within the first wavelength region, the second cavity has a plurality of center wavelengths including a center wavelength within the second wavelength region, and the third cavity is an image sensor having a plurality of center wavelengths including the center wavelength in the third wavelength region. 24. The method of claim 23,
The first, second, and third cavities are configured to have different effective refractive indices. 25. The method of claim 24,
The first, second and third cavities have the same thickness as each other. 25. The method of claim 24,
At least one of the first, second, and third cavities includes a base and at least one pattern disposed in the base in a predetermined shape. 20. The method of claim 19,
The spectral filter is provided above or below the plurality of cavities and further comprises a plurality of dielectric layers having different effective refractive indices. 20. The method of claim 19,
wherein the image sensor further includes a timing controller, a row decoder, and an output circuit. 29. An electronic device comprising the image sensor according to any one of claims 19 to 28. 30. The method of claim 29,
The electronic device includes a mobile phone, a smart phone, a tablet, a smart tablet, a digital camera, a camcorder, a notebook computer, a television, a smart television, a smart refrigerator, a security camera, a robot, or a medical camera.

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