KR20220142780A - Stretchable device and display panel and sensor and electronic device - Google Patents

Abstract

The present invention relates to a stretchable element, a display panel, a sensor and an electronic device. The stretchable element comprises: a stretchable substrate having a plurality of cut lines deformed by an external force; a plurality of active elements located on the stretchable substrate; and a connection wire electrically connecting adjacent active elements. The connection wire comprises: a metal wire; and a conductive elastic structure electrically connected to the metal wire and locally located in the connection wire.

Description

Stretching elements, display panels, sensors, and electronic devices

It relates to a stretching element, a display panel, a sensor, and an electronic device.

In recent years, research has been conducted on attachable devices that directly attach biological devices such as display devices or smart skin devices, soft robots, and biomedical devices to objects, skin, or clothes. Such an attachable device can be flexibly stretched according to the shape of an object or the movement of a living body, and extensibility that can be restored to its original state is required.

One embodiment provides a stretching device capable of improving stretching stability.

Another embodiment provides a display panel including the stretching element.

Another embodiment provides a sensor including the stretching element.

Another embodiment provides an electronic device including the stretching element, the display panel, or the sensor.

According to one embodiment, a stretched substrate having a plurality of cut lines deformed by an external force, a plurality of active elements positioned on the stretched substrate, and a connection line electrically connecting the adjacent active elements, the connection The wiring provides a stretching element including a metal wiring and a conductive elastic structure electrically connected to the metal wiring and located locally in the connection wiring.

The stretched substrate may include a plurality of island-shaped regions in which the active element is disposed and a stretched region excluding the island-shaped regions, and the plurality of cut lines may be positioned in the stretched region.

The connection line may be positioned on the stretched region of the stretched substrate.

The conductive elastic structure may be in contact with a portion where stress is concentrated in the metal wiring.

The conductive elastic structure may be in contact with an edge portion, a center portion, or a combination thereof of the metal wiring.

The conductive elastic structure may be located locally on the metal wire, or at least a portion of the conductive elastic structure may be embedded in the metal wire.

The conductive elastic structure may include a combination of at least one of a metal, a liquid metal, and a conductive nanostructure and an elastic polymer.

The conductive elastic structure may include an elastic layer including an elastic polymer, and a conductive layer positioned on the elastic layer and including a metal, wherein the elastic layer is a first sequentially positioned in a depth direction from a surface in contact with the conductive layer. It may include a depth region and a second depth region, and the first depth region may include the metal.

The elastic polymer may be a copolymer including at least one rigid structural unit and at least one flexible structural unit, and a weight ratio of the rigid structural unit to the flexible structural unit may be less than about 1.

The rigid structural unit may include a styrene structural unit, an olefin structural unit, a urethane structural unit, an ether structural unit, or a combination thereof, and the flexible structural unit is an ethylene structural unit, a propylene structural unit, a butylene structural unit, an iso butylene structural unit, butadiene structural unit, isoprene structural unit, or a combination thereof.

The metal is gold (Au), silver (Ag), copper (Cu), rhodium (Rh), palladium (Pd), ruthenium (Ru), osmium (Os), iridium (Ir), platinum (Pt), these alloys or combinations thereof.

The metal in the first depth region of the elastic layer may exist in the form of a metal cluster.

The conductive layer may be electrically connected to the metal cluster of the elastic layer.

The metal cluster or the conductive layer of the elastic layer may be electrically connected to the metal wiring.

The conductive layer may include a plurality of microcracks.

The active element may include a transistor, a light emitting element, a light absorbing element, a resistive element, an imaging element, or a combination thereof.

According to another embodiment, there is provided a display panel including the stretching element.

According to another embodiment, there is provided a sensor including the stretching element.

According to another embodiment, an electronic device including the stretching element, the display panel, or the sensor is provided.

Stretch stability can be improved.

1 is a plan view showing an example of a stretching element according to an embodiment,
Figure 2 is a plan view showing an example of the substrate in the stretching element of Figure 1,
Figure 3 is a cross-sectional view taken along the line III-III of the stretching element of Figure 1,
Figure 4 is a schematic view showing an example of the local arrangement of the conductive elastic structure in the stretching element of Figure 1,
5 and 6 are cross-sectional views showing an example of a conductive elastic structure in the stretching element of FIG. 1,
7 is a schematic diagram showing a skin type display panel according to an example;
8 is a schematic diagram illustrating a sensor according to an example.

Hereinafter, the embodiments will be described in detail so that those of ordinary skill in the art can easily implement them. However, the actually applied structure may be implemented in several different forms and is not limited to the embodiments described herein.

In order to clearly express various layers and regions in the drawings, the thicknesses are enlarged.

When a part of a layer, film, region, plate, etc. is said to be “on” another part, it includes not only cases where it is “directly on” another part, but also cases where there is another part in between. Conversely, when we say that a part is "just above" another part, we mean that there is no other part in the middle.

Unless otherwise defined below, 'substituted' means that a hydrogen atom in a compound or functional group is a halogen atom, a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, or a hydrazo group. No group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid or its salt, silyl group, C1 to C20 alkyl group, C2 to C20 alkenyl group, C2 to C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroaryl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, It means substituted with a substituent selected from a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof.

Hereinafter, the term 'combination' includes a mixture, a composite, or a stacked structure of two or more.

Hereinafter, a stretchable device according to an embodiment will be described with reference to the drawings.

1 is a plan view showing an example of a stretched element according to an embodiment, FIG. 2 is a plan view showing an example of a substrate in the stretched element of FIG. 1, and FIG. 3 is the stretched element of FIG. It is a cross-sectional view taken along, and FIG. 4 is a schematic diagram showing an example of a local arrangement of the conductive elastic structure in the stretching element of FIG. 1, and FIGS. 5 and 6 are cross-sectional views showing an example of the conductive elastic structure in the stretching element of FIG. .

1 and 3 , the stretching device 1000 according to an exemplary embodiment includes a substrate 110 , a plurality of active devices 200 positioned on the substrate 110 , and a connection wire 300 .

The substrate 110 may be a stretchable substrate that can be stretched in a predetermined direction and can be restored again. The stretched substrate can flexibly respond to external forces or external movements such as twisting, pressing, and pulling in a predetermined direction.

The substrate 110 may include an elastic polymer having a predetermined elastic modulus, where the elastic modulus may be, for example, Young's modulus. For example, the substrate 110 may be a substituted or unsubstituted polyorganosiloxane such as polycarbonate, polymethylmethacrylate, polyethyleneterephthalate, polyethylenenaphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, and polydimethylsiloxane. , an elastomer comprising a substituted or unsubstituted butadiene moiety such as styrene-ethylene-butylene-styrene, an elastomer comprising a urethane moiety, an elastomer comprising an acrylic moiety, an elastomer comprising an olefin moiety, or their Combinations may be included, but are not limited thereto.

For example, the substrate 110 may include an elastic polymer having a relatively high elastic modulus. For example, the elastic modulus of the substrate 110 may be, for example, about 10 ⁵ Pa to 10 ¹² Pa, about 10 ⁶ Pa to 10 ¹² Pa, or about 10 ⁷ Pa to 10 ¹² Pa, but is not limited thereto. For example, the substrate 110 may include polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, or a combination thereof, but is not limited thereto. not.

For example, the substrate 110 may include a combination of elastic polymers having different elastic modulus, for example, may have a laminated structure of a flexible layer having a relatively low elastic modulus and a rigid layer having a relatively high elastic modulus. For example, the flexible layer may be a lower layer and the rigid layer may be an upper layer, and the rigid layer may be disposed closer to the active device 200 to be described later than the flexible layer.

For example, the flexible layer may include a substituted or unsubstituted polyorganosiloxane such as polydimethylsiloxane, an elastomer including a substituted or unsubstituted butadiene moiety such as styrene-ethylene-butylene-styrene, or an elastomer including a urethane moiety , an elastomer including an acrylic moiety, an elastomer including an olefin moiety, or a combination thereof, and the rigid layer may include polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, poly amides, polyamideimides, polyethersulfones, or combinations thereof.

Referring to FIG. 2 , the substrate 110 includes a plurality of island-shaped regions 110A in which a plurality of active devices 200 to be described later are to be formed, and a stretched region 110B excluding the plurality of island-shaped regions 110A. The stretched region 110B includes a wiring region 110B-1 in which a connection wiring 300 to be described later is to be disposed. The plurality of island-like regions 110A may be spaced apart from each other at a predetermined interval and may be arranged, for example, in a plane direction (eg, XY direction) of the substrate 110 . The stretched region 110B is an entire region except for the island-shaped region 110A, and may be connected over the entire substrate 110 .

A plurality of cut lines (not shown) that are deformed by an external force are formed in the stretched region 110B of the substrate 110 . The cut line may be geometrically deformed while being widened or twisted by stretching of the substrate 110 , thereby providing effective stretchability to the substrate 110 having a relatively high elastic modulus. The shape, position, and/or size of the plurality of cut lines may be geometrically pre-calculated and determined in consideration of the stretching direction of the substrate 110 , the arrangement of the active element 200 , and the like. The plurality of incisions may be repeatedly disposed along the plane direction (eg, XY direction) of the substrate 110 , and thus, when stretching in a predetermined direction (eg, X and/or Y direction), the substrate 110 may have repetitive geometric shapes. Deformation may occur. Such a structure may be called a so-called "kirigami structure", and the incision line and adjacent patterns (cut patterns) divided by the incision line may be opened, stretched, or twisted, and accordingly, the presence or absence of stretching or the strength of stretching Accordingly, the separation distance between adjacent patterns (cut patterns) may change. For example, the separation distances L ₁ and L ₂ between the adjacent wiring regions 110B - 1 may be changed according to the presence or absence of stretching or the strength of stretching. Due to the two-dimensional and/or three-dimensional structural deformation, stretching and restoration in the stretching direction are easy, so that effective stretchability can be provided to the stretching region 110B of the substrate 110 .

1 and 3 , the plurality of active devices 200 are disposed on the island-like region 110A of the substrate 110 , for example, arranged along rows and/or columns of the substrate 110 to form an array. can form. The plurality of active devices 200 may be arranged in, for example, a Bayer matrix, a PenTile matrix, and/or a diamond matrix, but is not limited thereto. The plurality of active elements 200 may be disposed on the island-like region 110A of the substrate 110, which is relatively stable against external force, so that stretching stability may be high.

The plurality of active elements 200 may be the same or different from each other, and each active element 200 may include, for example, a light emitting element such as an organic light emitting diode, an inorganic light emitting diode, a quantum dot light emitting diode, a micro light emitting diode, or a perovskite light emitting diode; light absorption elements such as photoelectric conversion elements; transistors such as thin film transistors; resistance element; It may include an imaging device or a combination thereof, but is not limited thereto. Each active element 200 may include, but is not limited to, a conductor such as an electrode, a semiconductor such as an active layer, and an insulator.

For example, each active device 200 may be a light emitting device that independently displays red, green, blue, or a combination thereof. For example, the light emitting device may include a light emitting layer positioned between a pair of electrodes and a pair of electrodes and emitting light in a red wavelength region, a green wavelength region, a blue wavelength region, an infrared wavelength region, an ultraviolet wavelength region, or a combination thereof. .

For example, each active device 200 may be a light absorbing device that absorbs light in a red wavelength region, a green wavelength region, a blue wavelength region, an infrared wavelength region, an ultraviolet wavelength region, or a combination thereof. For example, the light absorbing element may include a light absorbing layer positioned between a pair of electrodes and a pair of electrodes and absorbing light in a red wavelength region, a green wavelength region, a blue wavelength region, an infrared wavelength region, an ultraviolet wavelength region, or a combination thereof. have.

For example, the plurality of active devices 200 may include a plurality of light emitting devices and a plurality of light absorbing devices alternately arranged along rows and/or columns.

For example, each active device 200 may include one or more thin film transistors. The thin film transistor may include, for example, a switching transistor and/or a driving transistor. The switching transistor includes a first gate electrode electrically connected to the gate line and the data line, and connected to the gate line; a first source electrode connected to the data line; a first drain electrode facing the first source electrode; and a first semiconductor electrically connected to the first source electrode and the first drain electrode, respectively. The driving transistor may include a second gate electrode electrically connected to the first drain electrode; a second source electrode connected to the driving voltage line; a second drain electrode facing the second source electrode; It may include a second semiconductor electrically connected to the second source electrode and the second drain electrode, respectively. For example, the first semiconductor and the second semiconductor may each include a semiconductor material and an elastic body. For example, the first semiconductor and the second semiconductor may each include an organic semiconductor material and an elastic body.

In the drawings, all of the active elements 200 are illustrated as having the same size, but the present invention is not limited thereto, and one or more active elements 200 may be larger or smaller than the other active elements 200 . In the drawings, all of the active elements 200 are illustrated as having the same shape, but the present invention is not limited thereto, and one or more active elements 200 may have different shapes from other active elements 200 .

The connection wiring 300 is disposed on the stretched region 110B of the substrate 110 and is located between the adjacent active elements 200 to electrically connect the adjacent active elements 200 .

The connection wire 300 includes a metal wire 310 and a conductive elastic structure 320 .

The metal wiring 310 may be an electrical wiring extending between adjacent active devices 200 and may include, for example, a low-resistance conductor such as silver, gold, copper, aluminum, or an alloy thereof, but is not limited thereto. Each metal wiring 310 may be one or more than one, and may be arranged along a row direction (eg, X direction) and column direction (eg, Y direction) between active elements 200 arranged along rows and/or columns. can However, the present invention is not limited thereto and may be arranged obliquely at a predetermined angle with respect to the row direction (eg, the X direction) and the column direction (eg, the Y direction). The metal wiring 310 may be connected to a signal line (not shown), and the signal line includes, for example, a gate line transmitting a gate signal (or a scan signal), a data line transmitting a data signal, and a driving voltage line applying a driving voltage. and/or a common voltage line for applying a common voltage, but is not limited thereto.

The conductive elastic structure 320 is electrically connected to the metal wire 310 and may be located locally in the connection wire 300 . Since the conductive elastic structure 320 has conductivity and a relatively low elastic modulus, stretchability may be improved while maintaining or supplementing the electrical characteristics of the connection wiring 300 .

For example, as shown in FIG. 3 , at least a portion of the conductive elastic structure 320 may be embedded in the metal wiring 310 . However, the present invention is not limited thereto, and the conductive elastic structure 320 may be in contact with one surface of the metal wire 310 on the upper or lower portion of the metal wire 310 .

As an example, referring to FIG. 4 , the conductive elastic structure 320 may be disposed in a portion S where stress is concentrated in the stretched region 110B of the substrate 110 and the metal wiring 310 . Stress may be applied to the metal wiring 310 formed thereon by deformation such as compression, tension, bending and/or torsion of the substrate 110, and the portion S where the stress is concentrated is compressed, tensioned, bent and/or twisted. /or it may be an area where deformation, such as torsion, is concentrated. The portion S where the stress is concentrated may be determined by various causes, for example, the stress may be concentrated on a portion of the metal wiring 310 by geometrical deformation by the cut line of the substrate 110 described above, for example, a metal Stress may be concentrated in an edge portion, a center portion, or a combination thereof of the wiring 310 . The portion S where the stress is concentrated may have a relatively higher relative stress than that of the above-described substrate 110 or metal wiring 310, for example, about 200% or more, and about 250% or more, 300% or more within the above range. or greater, about 500% or greater, about 750% or greater, or about 1000% or greater, within the above ranges from about 200% to 10000%, from about 250% to 10000%, from about 300% to 10000%, from about 500% to 10000%. %, or from about 750% to 10000%. Here, the relative stress may be a percentage with respect to the stress of the above-described substrate 110 or metal wiring 310 . Accordingly, the conductive elastic structure 320 may be formed to be in contact with the edge portion, the center portion, or a combination thereof of the metal wire 310, and accordingly, the stretchability of the connection wire 300 in the portion S where the stress is concentrated. and may prevent damage and/or short circuit of the connection wiring 300 .

The conductive elastic structure 320 may be a structure having both conductivity and elasticity, for example, may be electrically connected to the metal wire 310 and may have a lower elastic modulus than the metal wire 310 .

For example, the conductive elastic structure 320 may include a combination of a conductor and an elastic body, for example, may include a combination of a conductor and an elastic polymer, and may include, for example, at least one of metal, liquid metal, and conductive nanostructure and elastic. Combinations of polymers may be included. The conductive nanostructure may be, for example, conductive nanowires, conductive nanotubes, conductive nanofibers, conductive nanoparticles, or a combination thereof, but is not limited thereto. The conductive elastic structure 320 may be, for example, a combination of a metal and an elastic polymer, a combination of a liquid metal and an elastic polymer, or a combination of a conductive nanostructure and an elastic polymer. Combinations herein may include mixed, composite and/or layered structures.

For example, referring to FIG. 5 , the conductive elastic structure 320 may be a combination of a metal and an elastic polymer, and may include an elastic layer 321 including an elastic polymer and a conductive layer 322 including a metal. have.

The elastic layer 321 may have stretchability that can be stretched in a predetermined direction and restored again, and can flexibly respond to external forces or external movements such as twisting, pressing, and pulling in a predetermined direction. The elastic layer 321 may have a relatively low elastic modulus, and the elastic modulus of the elastic layer 321 may be, for example, about 10 ² Pa or more and less than 10 ⁸ Pa, and within the above range, about 10 ² Pa or more and 10 ⁷ Pa, It may be about 10 ² Pa or more and 10 ⁶ Pa or about 10 ² Pa or more and 10 ⁵ Pa.

The elongation of the elastic layer 321 may be about 20% or more, and within the above range, about 50% or more, about 100% or more, about 120% or more, about 150% or more, about 200% or more, about 250% or more, or about 300% or more, within the above range from about 20% to 1000%, from about 50% to 1000%, from about 100% to 1000%, from about 120% to 1000%, from about 150% to 1000%, from about 200% to 1000% %, from about 250% to 1000% or from about 300% to 1000%. Here, the elongation may be a percentage of the length change increased to the breaking point with respect to the initial length.

The elastic layer 321 may include an elastic polymer having a relatively low elastic modulus. The elastic polymer may be, for example, a thermoplastic elastomer, a thermosetting elastomer, or a combination thereof, and may include a plurality of structural units identical to or different from each other.

For example, the elastic polymer may be a thermoplastic elastic polymer including at least one hard structural unit providing relatively hard physical properties and at least one soft structural unit providing relatively soft physical properties. can The rigid structural unit may provide plastic properties such as, for example, high-temperature performance, thermoplastic processability, tensile strength and tear strength, the flexible structural unit being For example, it can provide low-temperature performance, hardness, flexibility and elastomeric properties such as tension/compression. The rigid structural units and the flexible structural units may be respectively alternately arranged or arranged in clusters or blocks in the elastic polymer.

The rigid structural unit is, for example, a styrene-containing structural unit (hereinafter referred to as a 'styrene structural unit'), an olefin-containing structural unit (hereinafter referred to as an 'olefin structural unit'), and a urethane-containing structural unit (hereinafter referred to as a 'urethane structural unit'). ), an ether-containing structural unit (hereinafter referred to as an 'ether structural unit'), or a combination thereof, but is not limited thereto.

The flexible structural unit includes, for example, an ethylene-containing structural unit (hereinafter referred to as an 'ethylene structural unit'), a propylene-containing structural unit (hereinafter referred to as a 'propylene structural unit'), and a butylene-containing structural unit (hereinafter referred to as a 'butylene structural unit'). ), isobutylene-containing structural unit (hereinafter referred to as 'isobutylene structural unit'), butadiene-containing structural unit (hereinafter referred to as 'butadiene structural unit'), isoprene-containing structural unit (hereinafter referred to as 'isoprene structural unit') or a combination thereof, but is not limited thereto.

For example, the rigid structural unit may be a styrene structural unit, and the flexible structural unit includes an ethylene structural unit, a propylene structural unit, a butylene structural unit, an isobutylene structural unit, a butadiene structural unit, an isoprene structural unit, or a combination thereof. can do.

For example, the elastic polymer is styrene-butadiene rubber (styrene-butadiene rubber, SBR), styrene-ethylene-butylene-styrene (styrene-ethylene-butylene-styrene, SEBS), styrene-ethylene-propylene-styrene Styrene (styrene-ethylene-propylene-styrene, SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene- isobutylene-styrene (styrene-isobutylene-styrene, SIBS) or a combination thereof.

The elastic polymer may have a relatively low glass transition temperature (Tg). Since the elastic layer 321 contains an elastic polymer having a relatively low glass transition temperature, in the step of thermally depositing the conductive layer 322 to be described later on the elastic layer 321, the increased flexibility of the elastic polymer chains in the elastic layer 321 and Due to the increased free volume, penetration and/or diffusion of metal into the surface and interior of the elastic layer 321 may be facilitated.

The glass transition temperature of the elastic polymer may be, for example, about 80 ° C. or less, and about 75 ° C. or less, about 70 ° C. or less, about 65 ° C. or less, or about 60 ° C. or less, for example, about -80 ° C. or more, about - 70 °C or higher, about -60 °C or higher, about 0 °C or higher, about 5 °C or higher, about 10 °C or higher, about 20 °C or higher, about 25 °C or higher, or about 30 °C or higher, within this range about -80 °C to 80°C, about -80°C to 75°C, about -80°C to 70°C, about -60°C to 65°C, or about -30°C to 60°C.

As such, an elastic polymer having a relatively low glass transition temperature can be obtained by controlling the ratio of a structural unit having a relatively high glass transition temperature to a structural unit having a relatively low glass transition temperature. For example, a structural unit having a relatively high glass transition temperature may be selected from the aforementioned rigid structural units, and a structural unit having a relatively low glass transition temperature may be selected from the aforementioned soft structural units. For example, the weight ratio of the rigid structural unit to the ductile structural unit of the elastic polymer may be less than about 1, and within the above range, about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, about 0.5 or less, about 0.4 or less, or It can be about 0.3 or less, and it can be about 0.01 to 0.9, about 0.01 to 0.8, about 0.01 to 0.7, about 0.01 to 0.6, about 0.01 to 0.5, about 0.01 to 0.4, or about 0.01 to 0.3.

For example, the elastic polymer may be styrene-ethylene-butylene-styrene (SEBS) including a styrene structural unit as a rigid structural unit and an ethylene structural unit and a butylene structural unit as a soft structural unit, and ethylene By controlling the weight ratio of the structural unit and the styrene structural unit to the butylene structural unit, an elastic polymer having a relatively low glass transition temperature of, for example, about 80° C. or less can be obtained. For example, in styrene-ethylene-butylene-styrene (SEBS), the weight ratio of the styrene structural unit to the ethylene structural unit and the butylene structural unit may be less than about 1, and within this range, about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, about 0.5 or less, about 0.4 or less, or about 0.3 or less, about 0.01 to 0.9, about 0.01 to 0.8, about 0.01 to 0.7, about 0.01 to 0.6, about 0.01 to 0.5, from about 0.01 to 0.4 or from about 0.01 to 0.3.

The elastic layer 321 may have a first depth region 321a and a second depth region 321b sequentially positioned along a depth direction (eg, Z direction) from an upper surface 321U in contact with the conductive layer 322 . . The first depth region 321a may be a region up to a predetermined depth from the upper surface 321U in contact with the conductive layer 322 , and the second depth region 321b is a boundary 321M with the first depth region 321a. ) to the lower surface 321L of the elastic layer 321 . The first depth region 321a and the second depth region 321b may be determined depending on whether a metal to be described later is included, and the boundary 321M between the first depth region 321a and the second depth region 321b will be described later. It may be a boundary through which the metal penetrates and/or diffuses during thermal deposition of the metal to form the conductive layer 322 . The thickness of the first depth region 321a may not be constant depending on the location.

The first depth region 321a of the elastic layer 321 may include a metal. The metal included in the first depth region 321a of the elastic layer 321 penetrates into the inside through the upper surface 321U of the elastic layer 321 when the metal is thermally deposited to form a conductive layer 322 to be described later. / or may be derived from diffused metal atoms, and accordingly, the type of metal included in the first depth region 321a of the elastic layer 321 may be the same as the type of metal included in the conductive layer 322 . .

The metal may be selected from metals with low reactivity, for example, may be a noble metal, for example, gold (Au), silver (Ag), copper (Cu), rhodium (Rh), palladium (Pd), ruthenium. (Ru), osmium (Os), iridium (Ir), platinum (Pt), an alloy thereof, or a combination thereof, but is not limited thereto.

For example, metal atoms that have penetrated and/or diffused inside through the upper surface 321U of the elastic layer 321 may aggregate with each other to form metal clusters. Accordingly, at least a portion of the metal positioned in the first depth region 321a of the elastic layer 321 may exist in the form of a metal cluster.

The first depth region 321a of the elastic layer 321 may have, for example, a thickness of about 2 nm to 100 nm, within the range of about 2 nm to 70 nm, about 2 nm to 50 nm, about 2 nm to 40 nm, about 2 nm to 30 nm, about It may have a thickness of 2 nm to 25 nm, about 2 nm to 20 nm, about 2 nm to 15 nm, or about 2 nm to 10 nm, but is not limited thereto.

The conductive layer 322 may be a metal layer formed to a predetermined thickness on the elastic layer 321 . The conductive layer 322 may include the same type of metal as the metal included in the first depth region 321a of the aforementioned elastic layer 321 . The conductive layer 322 may include, for example, an inert metal, for example, gold (Au), silver (Ag), copper (Cu), rhodium (Rh), palladium (Pd), ruthenium (Ru), or osmium (Os). , inert metals such as iridium (Ir) or platinum (Pt); alloys thereof; or a combination thereof, but is not limited thereto.

The conductive layer 322 may be a thin film deposited by thermal evaporation as described later, or may be a fine pattern having a predetermined width and length. For example, the conductive layer 322 may have an island shape, a linear shape, or a wavy shape, but is not limited thereto.

Referring to FIG. 6 , the conductive layer 322 may have a plurality of microcracks 322a, and the plurality of microcracks 322a may be enlarged by extending along the stretching direction during stretching. The plurality of microcracks 322a may be intentionally or unintentionally formed during the formation of the conductive layer 322 or the stretching of the conductive layer 322 . The plurality of microcracks 322a may prevent or reduce the cracking or cracking of the conductive layer 322 during stretching by imparting flexibility or stretchability to the conductive layer 322 . In addition, since the microcracks 322a are separated from each other like small holes in the conductive layer 322, unlike general linear cracks, the passage of current in the conductive layer 322 during stretching is a microcrack ( 322a) can be continuously connected without being blocked, and thus electrical stability can be secured without damage to the electrical passage due to elongation.

The conductive layer 322 may be electrically connected to a metal (eg, a metal cluster) existing in the first depth region 321a of the above-described elastic layer 321 , for example, in the first depth region of the elastic layer 321 . It may be in contact with at least some of the metal present in 321a. Therefore, it is possible to increase the adhesiveness between the conductive layer 322 and the upper surface 321U of the elastic layer 321 , thereby preventing the conductive layer 322 from peeling or detaching from the elastic layer 321 during stretching. Thus, an electrical short circuit can be effectively prevented. In addition, a metal (eg, a metal cluster) present in the first depth region 321a of the elastic layer 321 may also serve as one electrical passage, thereby maintaining stable electrical properties even during stretching.

The metal (eg, metal cluster) and/or the conductive layer 322 present in the first depth region 321a of the elastic layer 321 may be electrically connected to the metal wiring 310 , for example, the elastic layer 321 . ), a metal (eg, a metal cluster) and/or a conductive layer 322 present in the first depth region 321a may be in contact with at least a portion of the metal wiring 310 . Accordingly, even if a part of the metal wiring 310 is damaged or short-circuited, the electrical connection is maintained by the metal (eg, metal cluster) and/or the conductive layer 322 present in the first depth region 321a of the elastic layer 321 . Stable electrical properties can be maintained even during stretching.

The conductive elastic structure 320 can flexibly respond to an external force or external movement such as twisting, pressing, and pulling in a predetermined direction, and at the same time, as described above, the adhesiveness between the elastic layer 321 and the conductive layer 322 is improved. By increasing the height and maintaining the electrical connection with the metal wiring 310, it is possible to effectively reduce or prevent damage caused by external force or movement, and by stably securing an electrical passage, ultimately, it is possible to effectively increase electrical stability according to stretching.

The conductive elastic structure 320 may be formed by thermally depositing a metal on the elastic layer 321 as described above. For example, the method of manufacturing the conductive elastic structure 320 may include preparing the elastic layer 321 , and thermally depositing a metal on the elastic layer 321 to form the conductive layer 322 .

The step of preparing the elastic layer 321 may be obtained by, for example, applying an elastic polymer solution containing an elastic polymer by a solution process such as spin coating, curing, and selectively patterning. The elastic polymer solution may further include, for example, a curing agent. The elastic polymer is as described above, for example, a monomer or oligomer for at least one rigid structural unit and a monomer or oligomer for at least one flexible structural unit, for example, a predetermined glass transition temperature of about 80° C. or less. It can be obtained by copolymerization in a ratio. For example, a weight ratio of the monomer or oligomer for the at least one flexible structural unit to the monomer or oligomer for the at least one rigid structural unit may be included less than about 1, and within this range, about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, about 0.5 or less, about 0.4 or less, or about 0.3 or less, about 0.01 to 0.9, about 0.01 to 0.8, about 0.01 to 0.7, about 0.01 to 0.6, about 0.01 to 0.5, about 0.01 to 0.4 or about 0.01 to 0.3 may be included.

Forming the conductive layer 322 may be performed by a method of forming a thin film at a temperature equal to or higher than the glass transition temperature of the elastic polymer, for example, may be performed by thermal deposition, vacuum It may be performed by vacuum thermal deposition. For example, forming the conductive layer 322 may include preparing a thermal evaporator in which a boat or crucible containing a metal sample and an elastic layer 321 face each other in a vacuum chamber, and applying heat to the boat or crucible to form the metal Evaporating the sample may include thermally depositing a metal on the surface of the elastic layer 321 . The heat applied to the boat or crucible may be, for example, resistive heat.

For example, in the step of applying heat to the boat or crucible, the temperature inside the vacuum chamber may be increased by radiant heat generated by the heat, and the temperature of the vacuum chamber at this time may be equal to or higher than the glass transition temperature of the elastic polymer, for example. . In addition, in the step of applying heat to the boat or crucible, the surface temperature of the elastic layer 321 may also be increased by the radiant heat generated by the heat, and the surface temperature of the elastic layer 321 at this time is, for example, the glass transition temperature of the elastic polymer and the may be the same or higher. As described above, as the surface temperature of the vacuum chamber and/or the elastic layer 321 increases, the flexibility and free space of the elastic polymer chain of the elastic layer 321 can be increased, and the penetration of metal into the elastic layer 321 and / or increase the spread.

The amount of metal that penetrates and/or diffuses into the elastic layer 321 can be controlled by, for example, a deposition rate. For example, when depositing at a slow deposition rate for a long time, the depth at which metal atoms are diffused (the first depth region 321a) is relatively It may be deep, for example, in the case of depositing at a high deposition rate, the depth at which metal atoms are diffused (the first depth region 321a) may be relatively shallow. For example, the deposition rate of the metal may be, for example, about 0.001 Å/s or greater, about 0.002 Å/s or greater, about 0.005 Å/s or greater, about 0.007 Å/s or greater, about 0.01 Å/s or greater, about 0.002 Å/s or greater, about 0.005 Å/s or greater or about 0.007 Å/s or greater, such as about 20 Å/s or less, within the above range about 15 Å/s or less, about 10 Å/s or less, about 5 Å/s or less, about 3 Å/s or less, about 2 Å/s or less, about 1 Å/s or less, about 0.5 Å/s or less, about 0.4 Å/s or less, about 0.3 Å/s or less, about 0.2 Å/s or less, or about 0.1 Å/s or less, within this range about 0.001 Å/s to 20 Å/s, about 0.001 Å/s to 15 Å/s, about 0.001 Å/s to 10 Å/s, about 0.001 Å/s to 5 Å/s, from about 0.001 Å/s to 3 Å/s, from about 0.001 Å/s to 2 Å/s, from about 0.001 Å/s to 1 Å/s, from about 0.001 Å/s to 0.5 Å/s, from about 0.001 Å/s to 0.4 Å/s, from about 0.001 Å/s to 0.3 Å/s, from about 0.001 Å/s to 0.2 Å/s, or from about 0.001 Å/s to 0.1 Å/s.

The metal atoms evaporated initially in the step of thermally depositing the metal may easily penetrate and/or diffuse the surface of the elastic layer 321 having a relatively low glass transition temperature and move into the elastic layer 321, thus It may be distributed in an area up to a predetermined depth from the surface of the elastic layer 321 . Meanwhile, as the amount of metal atoms moved into the elastic layer 321 increases, at least some of the metal atoms may be aggregated with adjacent metal atoms and distributed in the form of metal clusters. When saturated with metal atoms and metal clusters at a predetermined depth from the surface of the elastic layer 321 , penetration and/or diffusion of metal atoms into the interior stops and is laminated on the surface of the elastic layer 321 to form the conductive layer 322 . can be formed.

As described above, the stretching element 1000 according to the present embodiment includes the conductive elastic structure 320 formed locally in addition to the metal wiring 310 in the connection wiring 300 for connecting the active element 200, so that the stretching stress during stretching. In this concentrated portion, it is possible to prevent damage and/or short circuit of the connection wiring 300 by providing extensibility to the connection wiring 300 and compensating for electrical damage to the metal wiring 310 due to stress concentration. Furthermore, when the substrate 110 having a relatively high elastic modulus is used for mechanical stability of the active element 200, a geometrical deformation structure by a cut line called a so-called kirigami structure in a region other than the region on which the active element 200 is disposed can be designed, and the conductive elastic structure 320 described above is disposed in a local area of the connection wiring 300 where stress is concentrated by the geometric deformation of the substrate 110 in such a kirigami structure to be connected to the connection wiring 300 . It is possible to prevent damage and/or short circuit of the connection wiring 300 by providing stretchability and compensating for electrical damage to the metal wiring 310 due to stress concentration. Accordingly, it is possible to ultimately increase the stretching stability of the stretching element 1000 .

The above-described stretching element 1000 may be applied to various stretching element systems requiring stretchability, for example, a display panel or a sensor. Stretched device systems include, for example, a bendable display panel, a foldable display panel, a rollable display panel, a wearable device, and a skin-like display panel. display panel), a skin-like sensor, a large-area conformable display, smart clothing, and the like, but is not limited thereto.

7 is a schematic diagram illustrating a skin-type display panel according to an example, and FIG. 8 is a schematic diagram illustrating a sensor according to an example.

Referring to FIG. 7 , the above-described stretching element 1000 may be a skin-type display panel that is an ultrathin display panel, and may display predetermined information such as various characters and/or images.

Referring to FIG. 8 , the above-described stretching element 1000 may be an attachable biosensor, and may be attached to a living body surface such as skin, a living body such as an organ, or an indirect means contacting a living body such as clothes, such as a biological signal. Biometric information can be detected and measured. For example, the biosensor may include an electroencephalogram (EEG) sensor, an electrocardiogram (ECG) sensor, a blood pressure (BP) sensor, an electromyography (EMG) sensor, a blood glucose (BG) sensor, and a light blood flow. Measurement (photoplethysmography, PPG) sensor, accelerometer (accelerometer), RFID antenna (RFID antenna), inertial sensor (inertial sensor), activity sensor (activity sensor), strain sensor (strain sensor), motion sensor (Motion sensor) or these It may be a combination, but is not limited thereto. The biosensor can be attached to a living body in a very thin patch type or band type to monitor biometric information in real time.

As an example, the stretching element 1000 may be a photo blood flow measurement sensor (PPG sensor), and the biometric information may include heart rate, oxygen saturation, stress, arrhythmia, blood pressure, etc., and biometric information by analyzing a waveform of an electrical signal. can be obtained.

For example, the stretching element 1000 may be an electromyography (EMG) sensor or a strain sensor attached to a joint portion for rehabilitation treatment of patients with joint and muscle problems. An electromyography (EMG) sensor or strain sensor may be attached to a desired treatment site to quantitatively measure muscle movement or joint movement to obtain data necessary for rehabilitation.

the stretching element described above; Alternatively, a stretch element system such as a display panel and a sensor may be included in various electronic devices, and the electronic device may further include a processor (not shown) and a memory (not shown). Electronic devices are mobile; TV; The health care device may be, for example, a photoplethysmography (PPG) sensor device, an electroencephalogram (EEG) sensor device, an electrocardiogram (ECG) sensor device, and a blood pressure (BP) sensor device. , electromyography (EMG) sensor device, diabetes (blood glucose, BG) sensor device, accelerometer device, RFID antenna device, inertial sensor device, activity sensor device, It may be a strain sensor device, a motion sensor device, or a combination thereof, but is not limited thereto.

Although the embodiments have been described in detail above, the scope of the rights is not limited thereto, and various modifications and improved forms of those skilled in the art using the basic concepts defined in the following claims also belong to the scope of the rights.

110: substrate
110A: Island area
110B: stretch area
200: active element
300: connection wiring
310: metal wiring
320: conductive elastic structure
321: elastic layer
322: metal layer
1000: stretching element

Claims (20)

A stretched substrate having a plurality of incisions deformed by an external force;
a plurality of active elements positioned on the stretched substrate; and
a connection wire electrically connecting the adjacent active elements
including,
The connecting wire is
metal wiring, and
A conductive elastic structure electrically connected to the metal wiring and located locally in the connection wiring
A stretching element comprising a.
In claim 1,
The stretched substrate is
a plurality of island-like regions in which the active element is disposed; and
Stretched area excluding the island-like area
including,
The plurality of incision lines are located in the stretching region.
In claim 2,
The connecting wiring is a stretching element positioned on the stretching region of the stretching substrate.
In claim 1,
The conductive elastic structure is a stretching element in contact with a portion where stress is concentrated in the metal wiring.
In claim 1,
The conductive elastic structure is a stretching element in contact with an edge portion, a center portion, or a combination thereof of the metal wiring.
In claim 1,
The conductive elastic structure is locally located on the upper portion of the metal wire, or at least a portion of the conductive elastic structure is embedded in the metal wire.
In claim 1,
The conductive elastic structure is a stretching device comprising a combination of at least one of a metal, a liquid metal, and a conductive nanostructure and an elastic polymer.
In claim 7,
The conductive elastic structure is
An elastic layer comprising an elastic polymer, and
A conductive layer positioned on the elastic layer and comprising a metal
including,
The elastic layer includes a first depth region and a second depth region sequentially positioned in a depth direction from a surface in contact with the conductive layer,
The first depth region includes the metal
elongated element.
In claim 8,
The elastic polymer is a copolymer comprising at least one rigid structural unit and at least one flexible structural unit,
A weight ratio of the rigid structural unit to the flexible structural unit is less than 1.
In claim 9,
The rigid structural unit includes a styrene structural unit, an olefin structural unit, a urethane structural unit, an ether structural unit, or a combination thereof,
The flexible structural unit includes an ethylene structural unit, a propylene structural unit, a butylene structural unit, an isobutylene structural unit, a butadiene structural unit, an isoprene structural unit, or a combination thereof.
In claim 8,
The metal is gold (Au), silver (Ag), copper (Cu), rhodium (Rh), palladium (Pd), ruthenium (Ru), osmium (Os), iridium (Ir), platinum (Pt), these An elongated element comprising an alloy or a combination thereof.
In claim 8,
The stretching element in which the metal in the first depth region of the elastic layer is present in the form of a metal cluster.
In claim 12,
The conductive layer is electrically connected to the metal cluster of the elastic layer.
In claim 12,
The metal cluster or the conductive layer of the elastic layer is electrically connected to the metal wiring.
In claim 8,
The conductive layer is a stretched device including a plurality of microcracks (microcracks).
In claim 1,
The active element is a stretching element including a transistor, a light emitting element, a light absorbing element, a resistive element, an imaging element, or a combination thereof.
A display panel comprising the stretching element according to any one of claims 1 to 16.
17. A sensor comprising the stretching element according to any one of claims 1 to 16.
An electronic device comprising the display panel according to claim 17 .
An electronic device comprising the sensor according to claim 18 .

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