KR20220136123A - Substrate mounting table polishing method and substrate processing apparatus - Google Patents

Abstract

The purpose of the present invention is to suppress the generation of a step caused by machining mismatch caused by the tilting of a machining tool due to a cutting load during the machining of a substrate mounting base, and to suppress the generation of an etching speckle. A method for polishing a substrate placing surface, which is the top surface of a substrate mounting base provided with a substrate, a lower thermal spray film provided on the substrate, and an upper thermal spray film provided on an electrode layer includes the steps of: applying an impregnation process using an impregnation agent to the thermal spray film; applying a planarization process by a grinding process to the substrate placing surface; and masking a peripheral part of the substrate placing surface to apply a roughening process to a central part of the substrate placing surface excluding the peripheral part.

Description

Grinding method and substrate processing apparatus for substrate loading table

The present disclosure relates to a polishing method for a substrate mounting table and a substrate processing apparatus.

Patent Document 1 discloses a substrate mounting table having a roughened portion on a substrate mounting surface formed of an insulating film and a smooth portion provided around it, and a method for manufacturing the same. In such a board|substrate mounting stand, generation|occurrence|production of an etching stain can be suppressed effectively, without damaging a board|substrate.

Japanese Patent Laid-Open No. 2011-119326

The technology according to the present disclosure suppresses generation of a level difference accompanying a processing mismatch caused by an inclination of a processing tool under the influence of a cutting load during processing of a substrate mounting table, thereby suppressing the occurrence of etching unevenness.

One aspect of the present disclosure is a polishing method for polishing a substrate mounting surface, which is an upper surface of a substrate mounting table having a substrate, a lower thermal sprayed film provided on the substrate, and an upper thermal sprayed film provided on an electrode layer, The process of performing an impregnation process, the process of performing the flattening process by grinding with respect to the said board|substrate mounting surface, The periphery of the said board|substrate mounting surface is masked, and roughening process with respect to the center part except the periphery of the said board|substrate mounting surface. There is a process for carrying out

ADVANTAGE OF THE INVENTION According to this indication, generation|occurrence|production of the level|step difference accompanying a processing mismatch which arises when a processing tool inclines under the influence of a cutting load during processing of a board|substrate mounting table can be suppressed, and generation|occurrence|production of an etching stain can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing about a process mismatch.
2 is a longitudinal sectional view schematically showing the configuration of the plasma processing apparatus according to the present embodiment.
3 is a cross-sectional view schematically showing the configuration of the plasma processing apparatus according to the present embodiment.
Fig. 4 is an explanatory view of a polishing method for the mounting table according to the present embodiment.
It is explanatory drawing for the grinding|polishing method of the mounting table which concerns on another 1st Embodiment.
6 is an explanatory view of a polishing method of a mounting table according to another second embodiment.

In the manufacturing process of a plasma panel display (FPD), a plasma etching process is performed with respect to the board|substrate which is a to-be-processed object. In the plasma etching process, for example, in a processing vessel in which a pair of parallel plate electrodes (upper electrode and lower electrode) are arranged, a substrate is placed on a substrate mounting table functioning as a lower electrode, and high-frequency power is applied to at least one of the electrodes. to form a high-frequency electric field between the electrodes. A plasma of a processing gas is formed by this high-frequency electric field, and the material film on the substrate is etched by the plasma. If the plasma etching process is repeatedly performed, an etching product may be generated, which may adhere to and accumulate on the surface of the substrate mounting table. In that case, in the surface of the substrate mounting table, the presence of the deposit causes a region where the deposit is interposed between the back surface of the substrate and the surface of the substrate mounting table, and there is a difference in thermal conductivity and conductivity between the area in which the deposit is not present. occurs Thereby, a part with a high etching rate and a part with a low etching rate are formed in the surface of a board|substrate, and the nonuniformity called an etching unevenness generate|occur|produces.

In recent years, the manufacturing apparatus of FPD WHEREIN: The panel production for flexible is increasing, and the customer request|requirement regarding the display nonuniformity of a panel is becoming strict. Therefore, it is necessary to process or polish the surface of the thermal sprayed film (insulating film) sprayed onto the surface of the substrate mounting table (lower electrode) into a more suitable shape (for example, macroscopically flat and microscopically rough). Patent Document 1 discloses a configuration in which the insulating film formed on the surface of the substrate mounting table is smoothed, and then only the inner part of the insulating film is blasted to form a roughened part, and the periphery is a smooth part. have.

In the prior art, machining using a processing tool is known as a processing method of a thermal sprayed coating on the surface of a substrate mounting table. In machining, there is a concern about so-called machining mismatch, in which a machining tool tilts under the influence of a cutting load during machining and a step is formed on the surface. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing about a process mismatch. As shown in FIG. 1A , during cutting with the machining tool 200 , the machining tool inclines due to cutting resistance, thereby forming a fine step 203 on the surface of the substrate mounting table 202 . become And, as shown in (b) of FIG. 1 , when the etching product 204 is attached in a state in which a step 203 is formed on the surface of the substrate mounting table 202 , depending on the position of the substrate due to the step Due to the difference in heat transfer (refer to the large and small arrows in the figure), a temperature difference (temperature non-uniformity) may occur, and there is a possibility that etching unevenness may occur.

Therefore, the technique according to the present disclosure realizes a substrate mounting table capable of effectively preventing the occurrence of etching unevenness by suppressing the occurrence of processing mismatch accompanying machining using a machining tool in surface polishing of the substrate mounting table. do.

Hereinafter, the structure of the plasma processing apparatus provided with the board|substrate mounting stand which concerns on this embodiment is demonstrated, referring drawings. In addition, in this specification, in the element which has substantially the same functional structure, duplicate description is abbreviate|omitted by attaching|subjecting the same number.

<Plasma processing device>

2 and 3 are a longitudinal cross-sectional view and a cross-sectional view respectively showing the outline of the structure of the plasma processing apparatus which concerns on this embodiment.

The plasma processing apparatus 1 of FIG. 2 performs substrate processing using plasma of a processing gas, ie, plasma processing, on a rectangular glass substrate G (hereinafter referred to as "substrate G") as a substrate. The plasma processing performed by the plasma processing apparatus 1 is, for example, a film-forming process for FPD, an etching process, an ashing process, etc. FIG. By these processes, an electronic device such as a light emitting element or a driving circuit of the light emitting element is formed on the substrate G.

The plasma processing apparatus 1 is provided with the container body 10 of a bottomed square cylinder shape. The container body 10 is made of a conductive material, for example, aluminum, and is electrically grounded. Since corrosive gas is often used for plasma treatment, the inner wall surface of the container body 10 is subjected to a corrosion-resistant coating treatment such as anodizing treatment for the purpose of improving corrosion resistance. In addition, an opening is formed in the upper surface of the container body 10 . This opening is hermetically closed by a rectangular metal window 20 provided insulated from the container body 10 , and specifically, hermetically closed by a metal window 20 and a metal frame 14 to be described later. The space surrounded by the container body 10 and the metal window 20 becomes a processing space S1 in which the substrate G, which is the processing target of the plasma processing, is located during the plasma processing, and the space above the metal window 20 will be described later. An antenna room S2 in which a high-frequency antenna (plasma antenna) 90 is disposed. On the side wall of the container body 10 on the negative side (left side of FIG. 2 ) in the X direction, a gate valve 12 for opening and closing a carry-in outlet 11 for carrying in/out of the substrate G into and out of the processing space S1 is provided. is provided.

On the bottom wall 10a of the container body 10 , a substrate mounting table (hereinafter, simply referred to as a “loading table”) 30 on which the substrate G is mounted is provided so as to face the metal window 20 . The mounting table 30 is formed in a rectangular shape in planar view, for example. The mounting table 30 has the pedestal main body 31 whose upper surface becomes the mounting surface of the board|substrate G. A base 36 made of a conductive material, for example, aluminum or an aluminum alloy, is provided under the pedestal body 31 . The base material 36 is mounted on an insulating member 32 made of an insulating material, and the pedestal body 31 is placed on the bottom wall 10a of the container body 10 with the base 36 and the insulating member 32 interposed therebetween. installed.

A power feeding member 44 is connected to the lower surface of the base material 36 . The power supply member 44 is connected to a high frequency power supply 41 serving as a bias power supply via a matching device 40 . The high frequency power supply 41 supplies high frequency power for biasing, for example, high frequency power having a frequency of 3.2 MHz to the pedestal main body 31 . Thereby, an RF bias is generated, and ions in the plasma generated in the processing space S1 can be drawn into the substrate G. In this way, the mounting table 30 forms a bias electrode for generating an RF bias.

As shown in FIG. 2 , a step portion is formed by the pedestal body 31 , the outer periphery of the base material 36 , and the upper portion of the insulating member 32 , and a rectangular focus ring 37 is formed on the step portion. has been The focus ring 37 is formed of ceramics, such as alumina. In the state where the substrate G is mounted on the upper surface of the pedestal main body 31 , the end of the upper surface of the focus ring 36 on the mounting table side is covered with the outer periphery of the substrate G.

The substrate 36 is provided with a temperature control medium flow path 47a meandering so as to cover the entire area of the plane. At both ends of the temperature control medium flow path 47a, the transfer pipe 47b to which the temperature control medium is supplied with respect to the temperature control medium flow path 47a, and the temperature control medium which flows through the temperature control medium flow path 47a and is heated are discharged. A return pipe 47c used is connected. As shown in Fig. 2, the conveying pipe 47b and the return pipe 47c communicate with the conveying flow path 51 and the return flow path 52, respectively, and the conveying flow path 51 and the return flow path 52 are It communicates with the chiller (50). The chiller 50 has a main body for controlling the temperature and discharge flow rate of the temperature control medium, and a pump for pumping the temperature control medium (both not shown). Moreover, a refrigerant|coolant is applied as a temperature control medium, Galden (trademark), a fluorine nut (trademark), etc. are applied to this refrigerant|coolant. The temperature control form of the illustrated example is a form in which a temperature control medium is circulated through the base material 36, but a form in which the base material 36 has a built-in heater or the like and temperature is controlled by a heater may be used, and both the temperature control medium and the heater It may be a form in which the temperature is controlled by Moreover, you may perform temperature control accompanying a heating by circulating a high temperature temperature control medium instead of a heater. Moreover, the heater which is a resistor is formed from tungsten, molybdenum, or any one of these metals, and a compound, such as alumina and titanium. In addition, although the temperature control medium flow path 47a is formed in the base material 36 in the example shown in figure, for example, the pedestal main body 31 may have a temperature control medium flow path.

The pedestal main body 31 is provided with the lower layer thermal sprayed-coat 33 formed with ceramics, such as dielectric material, for example, alumina, and the upper layer thermal sprayed-coat 34 provided on the lower layer thermal sprayed-coat 33. As shown in FIG. The upper thermal sprayed film 34 is formed by, for example, a thermal spraying method using ceramics such as alumina or a metal-ceramics composite. The upper surface of the upper thermal sprayed coating 34 is the board|substrate mounting surface 35 which mounts the board|substrate G. As shown in FIG. As for the board|substrate mounting surface 35, the surface roughness Ra surrounding the roughness part 35a which has a rough surface of 1 micrometer or more and 6 micrometers or less, for example, surface roughness Ra, and the roughening part 35a is less than 2 micrometers, for example. has a smooth portion 35b of That is, the board|substrate mounting surface 35 is comprised from the roughening part 35a (henceforth a 'center part') as a center part, and the smooth part 35b (henceforth a 'peripheral part') as a peripheral part.

The roughening part 35a has a fine unevenness|corrugation, and in the convex part, it has a structure supported without damaging the back surface of the board|substrate G by contacting with the board|substrate G at multiple points. Moreover, also when an etching product adheres on the roughening part 35a, it has a structure which can trap an etching product in the recessed part of the surface. As for the smooth part 35b, when the board|substrate G is mounted on the mounting table 30, the back surface of the periphery of the board|substrate G is closely_contact|adhered to the surface of the smooth part 35b, and the board|substrate G is stably mounted on the mounting table 30. you can let it With such a configuration, it is possible to form an enclosed space between the substrate G and the roughened portion 35a of the upper thermal sprayed coating 34, and in particular, when temperature control is performed by supplying a heat transfer gas to the back surface of the substrate G , since the heat transfer gas can be confined to the back surface side of the substrate G, the heat transfer efficiency is improved.

In addition, the surface roughness Ra means the arithmetic mean roughness prescribed in JIS B0601-1994, the reference length is determined from the roughness curve in the direction of the average line, and the deviation from the average line to the measured roughness curve within this reference length is Absolute values are summed up and the averaged value is expressed in micrometers (μm).

In addition, the pedestal main body 31 is provided with an electrode layer 31a constituting an electrostatic chuck for holding and holding the substrate G by suction. A DC power supply 46 is connected to the electrode layer 31a via a power supply line 45 . When a DC voltage is applied from the DC power supply 46 to the electrode layer 31a , a Coulomb force is generated, and the substrate G is held by the Coulomb force in a state mounted on the pedestal body 31 .

Further, an exhaust port 13 is formed in the bottom wall 10a of the container body 10 . A plurality of exhaust ports 13 are provided along each side of the mounting table 30 having a rectangular shape in plan view. As shown in FIG. 2 , an exhaust unit 60 having a vacuum pump or the like is connected to the exhaust port 13 . The processing space S1 is depressurized by the exhaust unit 60 . The exhaust portion 60 may be provided in each of the plurality of exhaust ports 13 , or may be provided in common to the plurality of exhaust ports 13 .

On the upper surface side of the side wall of the container body 10, a metal frame 14, which is a rectangular frame made of a metal material such as aluminum, is provided. Between the container body 10 and the metal frame 14 , a sealing member 15 for keeping the processing space S1 airtight is provided. Further, the container body 10 , the metal frame 14 , and the metal window 20 constitute a processing container in which the mounting table 30 is provided.

The metal window 20 is divided into a plurality of partial windows 21 , and these partial windows 21 are disposed inside the metal frame 14 , and constitute a rectangular metal window 20 as a whole.

Each of the partial windows 21 functions as a shower head that supplies a processing gas to the processing space S1. For example, in each partial window 21 , a plurality of gas discharge holes 21a for discharging the processing gas downward and a diffusion chamber 21b for diffusing the processing gas are formed, and the gas discharge holes 21a are formed. and the diffusion chamber 21b are in communication.

The diffusion chamber 21b of each partial window 21 is connected to the processing gas supply unit 71 through a gas supply pipe 70 . The processing gas supply unit 71 includes a flow rate control valve (not shown), an on/off valve (not shown), and the like, and supplies a processing gas required for a film forming process, an etching process, an ashing process, and the like to the diffusion chamber 21b. For convenience of illustration, FIG. 2 shows a state in which the processing gas supply unit 71 is connected to one partial window 21 , but in reality, a processing gas supply unit is connected to the diffusion chamber 21b of each partial window 21 . (71) is connected.

In addition, the partial windows 21 are electrically insulated from the metal frame 14 by the insulating member 22 , and the adjacent partial windows 21 are also electrically insulated from each other by the insulating member 22 . The insulating member 22 is provided with an insulating member cover 23 that covers the surface of the insulating member 22 on the processing space S1 side in order to protect the insulating member 22 .

Moreover, the top plate part 80 is arrange|positioned at the upper side of the metal window 20. As shown in FIG. The top plate portion 80 is supported by a side wall portion 81 provided on the metal frame 14 . Further, the partial window 21 constituting the metal window 20 is suspended from the top plate portion 80 via a hanging member (not shown).

The space surrounded by the metal window 20, the side wall portion 81, and the top plate portion 80 described above constitutes the antenna room S2, and the high frequency antenna 90 is located inside the antenna room S2 so as to face the partial window 21. is placed.

The high-frequency antenna 90 is arranged to be spaced apart from the partial window 21 via a spacer (not shown) formed of, for example, an insulating material. A plurality of high-frequency antennas 90 are formed, for example, in a spiral wound shape, concentrically so as to go along a surface corresponding to each partial window 21 and go around the rectangular metal window 20 in the circumferential direction. It constitutes an annular antenna.

A high frequency power supply 43 is connected to each high frequency antenna 90 via a matching device 42 . Each of the high-frequency antennas 90 is supplied with, for example, 13.56 MHz of high-frequency power from the high-frequency power supply 43 through the matching unit 42 . Accordingly, during the plasma treatment, an eddy current is induced on the surface of each of the partial windows 21 , and an induced electric field is formed in the processing space S1 by the eddy current. The processing gas discharged from the gas discharge hole 21a is converted into a plasma in the processing space S1 by the induced electric field.

In addition, the plasma processing apparatus 1 is provided with the control part U. The control unit U is, for example, a computer provided with a CPU or a memory, and has a program storage unit (not shown). A program for controlling the processing of the substrate G in the plasma processing apparatus 1 is stored in the program storage unit. The above-described program is recorded on a computer-readable storage medium, and may be installed in the control unit U from the storage medium. Part or all of the program may be realized by dedicated hardware (circuit board). Further, the storage medium may be temporary or non-transitory.

<Substrate processing>

Next, the substrate processing in the plasma processing apparatus 1 is demonstrated. In addition, the following substrate processing is performed under the control of the control part U.

First, the gate valve 12 is opened, and the board|substrate G is carried in in the process space S1 through the carrying-in outlet 11, and is mounted on the mounting table 30. After that, the gate valve 12 is closed.

Subsequently, the processing gas is supplied into the processing space S1 from the processing gas supply unit 71 through the diffusion chamber 21b of each of the partial windows 21 . Further, the process space S1 is evacuated by the exhaust unit 60 , and the pressure in the process space S1 is adjusted to a desired pressure.

Next, high-frequency power is supplied from the high-frequency power supply 43 to the high-frequency antenna 90 , whereby a uniform induced electric field is generated in the processing space S1 through the metal window 20 . As a result, the processing gas in the processing space S1 is converted into a plasma by the induced electric field, and a high-density inductively coupled plasma is generated. Then, by the high frequency power for bias supplied from the high frequency power supply 41 to the pedestal main body 31 of the mounting table 30 , ions in the plasma are drawn into the substrate G, and the substrate G is subjected to plasma processing.

After the plasma processing is finished, the power supply from the high frequency power supplies 41 and 43 and the processing gas supply from the processing gas supply unit 71 are stopped, and the substrate G is unloaded in the reverse order from that at the time of loading.

This completes the series of substrate processing.

<Polishing method of the substrate loading table>

Next, a polishing method of the mounting table 30 will be described with reference to the drawings. 4 is an explanatory view of a method for polishing a mounting table (substrate mounting surface) according to the present embodiment. First, as shown in Fig. 4(a), a structure A1 comprising a lower thermal sprayed film 33, an electrode layer 31a, and an upper thermal sprayed film 34 formed by thermal spraying as an upper layer on its upper surface is prepared. Then, the lower thermal sprayed coating 33, the electrode layer 31a, and the upper thermal sprayed coating 34 are impregnated with an impregnating agent in order to prevent penetration of the grinding liquid in the next step. Here, as the impregnating agent, for example, a first impregnating agent having a low filling rate, such as a fluororesin, silicone, or silicate, may be used, or a second impregnating agent having a high filling rate, such as acrylic, epoxy, or urethane, may be used.

And as shown in FIG.4(b), for example, using the grinding apparatus (not shown) which has the plane grinding wheel 100, grinding process as a flattening process with respect to the board|substrate mounting surface 35 whole surface. this is done Thereby, the whole surface of the board|substrate mounting surface 35 is smoothed uniformly, and surface roughness Ra of the upper surface of the upper thermal sprayed-coat 34 will be less than 2 micrometers.

Next, as shown in FIG.4(c), a roughening process is performed with respect to the center part 35a in the state which the peripheral part 35b of the board|substrate mounting surface 35 was protected by the mask 103. . A roughening process is performed as blast processing by the blasting apparatus 105, for example. In this blasting process, the process which cuts the upper thermal sprayed-coat 34 in the center part 35a may be performed. The amount of pitting of the upper layer thermal sprayed coating by this coring process is 30-50 micrometers, for example. By this roughening process, only the center part 35a in the board|substrate mounting surface 35 becomes surface roughness Ra 1 micrometer or more and 6 micrometers or less. Alumina, silicon carbite, and zirconia are mentioned as a blast material used in a blast process.

By the above process, the central part 35a of the board|substrate mounting surface 35 is comprised as the roughened part 35a which has predetermined surface roughness, and the peripheral part 35b protected by the mask 103 is the roughened part 35a. ) as compared to the flat smooth portion 35b.

<Effects of the present disclosure technology>

According to the grinding|polishing method which concerns on this embodiment, the roughening part 35a which has a predetermined|prescribed surface roughness on the board|substrate mounting surface 35, and the smooth part 35b are comprised in the periphery. Since machining using a machining tool is not used for grinding, there is no fear of a so-called machining mismatch, in which the machining tool tilts under the influence of a cutting load during machining and a step is formed on the surface. That is, it becomes possible to suppress generation|occurrence|production of the etching unevenness accompanying a process mismatch.

Moreover, when the board|substrate G is mounted on the board|substrate mounting surface 35, the board|substrate G closely_contact|adheres to the smooth part 35b, and since the convex part is formed in the roughening part 35a, the board|substrate G and an upper thermal sprayed coating A closed space is formed between the roughening portions 35a of (34). Thereby, when the heat transfer gas is supplied to the back surface of the substrate G to perform temperature control, since the heat transfer gas can be confined to the back surface side of the substrate G, the heat transfer efficiency is improved.

It should be considered that embodiment disclosed this time is an illustration in all points, and is not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the appended claims and the gist thereof. Hereinafter, another embodiment of the present disclosure will be described with reference to drawings and the like. In addition, in the following other embodiment, the same code|symbol is attached|subjected and shown about the component which has the same functional structure as the said embodiment, and the description is abbreviate|omitted.

<First other embodiment of the present disclosure>

Next, another first embodiment of the present disclosure will be described with reference to FIG. 5 . 5 is an explanatory view of a method for polishing a mounting table (substrate mounting surface) according to another first embodiment. First, as shown in Fig. 5 (a), a structure A2 comprising a lower thermal sprayed coating 33, an electrode layer 31a, and an upper thermal sprayed coating 34 formed by thermal spraying as an upper layer on its upper surface is prepared. And, with respect to the lower layer thermal sprayed coating 33, the electrode layer 31a, and the upper layer thermal sprayed coating 34, in order to prevent permeation of the grinding liquid in the next step, the interfacial adhesion with the weir sprayed coating 120 described later. For improvement, an impregnation treatment with an impregnating agent is performed. The impregnating agent used herein is a first impregnating agent having a low filling rate such as a fluororesin, silicone, or silicate.

And as shown in FIG.5(b), for example, using the grinding apparatus (not shown) which has the plane grinding wheel 100, grinding process as a flattening process with respect to the board|substrate mounting surface 35 whole surface. this is done Subsequently, as shown in Fig. 5(c), in a state where the central portion 35a is protected by the mask 110, ceramics such as alumina or a metal-ceramics composite is thermally sprayed to the peripheral portion 35b, A weir-shaped thermal sprayed coating 120 is formed. For the entire surface including the weir thermal sprayed coating 120, in order to prevent permeation of the grinding liquid in the next step, and to prevent peeling of the weir sprayed coating 120, an impregnation treatment with an impregnating agent is performed. is done The impregnating agent used herein is a second impregnating agent having a high filling rate such as acrylic, epoxy, or urethane.

Then, as shown in Fig. 5(d), using a grinding device (not shown) having a planar grinding wheel 100, a grinding process as a flattening process is performed on the surface of the weir-shaped thermal sprayed coating 120 . . Then, as shown in FIG.5(e), the roughening process is performed with respect to the center part 35a in the state which the planarized dam-like thermal sprayed coating 120 was protected by the mask 125. As shown in FIG. A roughening process uses the thermal spraying apparatus 130, for example, and is performed by the thermal spraying system called in-plane rough thermal spraying. After the roughening treatment, an impregnation treatment with an impregnating agent is performed in order to seal the formed pores and secure corrosion resistance and withstand voltage performance. The impregnating agent used herein is a second impregnating agent having a high filling rate such as acrylic, epoxy, or urethane.

By the above process, the central part 35a of the board|substrate mounting surface 35 is comprised as the roughening part 35a which has predetermined surface roughness, and the peripheral part 35b protected by the mask 125 after the planarization process is roughened. It is comprised as the smooth part 35b which is flat compared with the part 35a.

According to the polishing method according to the first other embodiment, in the shearing step of polishing shown in FIGS. The impregnation treatment is performed using a first impregnating agent having a low filling rate, such as a fluororesin, silicone, or silicate. In addition, in the post-polishing process shown in FIGS. 5(c) to 5(e), in order to improve the corrosion resistance and withstand voltage performance of the substrate mounting table 30, a second impregnating agent having a high filling rate such as acrylic, epoxy, urethane, etc. The used impregnation treatment is performed. Thereby, in addition to the effect demonstrated in the said embodiment, the mounting table 30 provided with the board|substrate mounting surface which was more excellent in corrosion resistance and voltage withstand performance is implement|achieved.

<Second other embodiment of the present disclosure>

Next, a second other embodiment of the present disclosure will be described with reference to FIG. 6 . 6 is an explanatory view of a method for polishing a mounting table (substrate mounting surface) according to another second embodiment. First, as shown in Fig. 6 (a), a structure A3 comprising a lower thermal sprayed coating 33, an electrode layer 31a, and an upper thermal sprayed coating 34 formed by thermal spraying as an upper layer on the upper surface thereof A3 is prepared. Then, the lower thermal sprayed coating 33, the electrode layer 31a, and the upper thermal sprayed coating 34 are impregnated with an impregnating agent in order to prevent penetration of the grinding liquid in the next step. The impregnating agent used herein is a second impregnating agent having a high filling rate such as acrylic, epoxy, or urethane.

And as shown in FIG.6(b), for example, using the grinding apparatus (not shown) which has the plane grinding wheel 100, grinding process as a flattening process with respect to the board|substrate mounting surface 35 whole surface. this is done Then, as shown in FIG.6(c), with respect to the central part 35a of the board|substrate mounting surface 35, by the blasting process using the blasting apparatus 105, in the central part 35a, the upper layer thermal sprayed film ( 34) is ditched (full ditching).

And as shown in FIG.6(d), the roughening process is performed with respect to the center part 35a in the state in which the peripheral part 35b was protected by the mask 135. As shown in FIG. A roughening process uses the thermal spraying apparatus 130, for example, and is performed by the thermal spraying system called in-plane rough thermal spraying. After the roughening treatment, an impregnation treatment with an impregnating agent is performed in order to seal the formed pores and secure corrosion resistance and withstand voltage performance. The impregnating agent used herein is a second impregnating agent having a high filling rate such as acrylic, epoxy, or urethane.

By the above process, the central part 35a of the board|substrate mounting surface 35 is comprised as the roughened part 35a which has a predetermined surface roughness, and the peripheral part 35b is flat compared with the roughened part 35a Smooth part 35b. is composed as

According to the grinding|polishing method which concerns on 2nd another embodiment, in addition to the effect demonstrated in the said embodiment, the mounting table 30 provided with the board|substrate mounting surface which is more excellent in corrosion resistance and voltage resistance performance is implement|achieved.

Claims (9)

It is a polishing method for polishing a substrate mounting surface, which is an upper surface of a substrate mounting table having a substrate, a lower thermal sprayed film provided on the substrate, and an upper thermal sprayed film provided on the electrode layer,
A step of impregnating the thermal sprayed coating with an impregnating agent;
A step of performing a planarization treatment by grinding with respect to the substrate mounting surface;
The process of masking the periphery of the said board|substrate mounting surface, and giving a roughening process with respect to the center part except the periphery of the said board|substrate mounting surface.
A method of polishing the substrate loading table. According to claim 1,
The method for polishing a substrate mounting table, wherein the impregnating treatment is performed by selecting at least one of a first impregnating agent and a second impregnating agent having a different filling rate from the first impregnating agent with respect to the thermal sprayed coating. 3. The method of claim 2,
The filling rate of the second impregnating agent is higher than that of the first impregnating agent,
The polishing method of the substrate mounting table, wherein the planarization treatment is performed on the entire surface of the substrate mounting surface after the impregnation treatment with the second impregnating agent is performed. 3. The method of claim 2,
The filling rate of the second impregnating agent is higher than that of the first impregnating agent,
The method for polishing a substrate mounting table, wherein the planarization treatment is performed with respect to the weir sprayed coating formed only on the periphery of the substrate mounting surface after the impregnation treatment with the first impregnating agent is performed. 5. The method of claim 4,
The polishing method of the substrate mounting table, wherein, after the planarization treatment of the weir sprayed film, an impregnation treatment with the second impregnating agent is further performed on the entire surface including the weir sprayed film. 4. The method of claim 3,
The said roughening process is the grinding|polishing method of the board|substrate mounting stand performed by a blast process. 7. The method of claim 6,
In the said roughening process, the grinding|polishing method of the board|substrate mounting table with which the process which cuts the said thermal sprayed film by the said blast process is performed. 6. The method of claim 5,
The said roughening process is the grinding|polishing method of the board|substrate mounting stand which is performed by thermal spraying. A substrate processing apparatus equipped with a substrate mounting table,
The substrate mounting table has a substrate, a lower thermal sprayed film provided on the substrate, and an upper thermal sprayed film provided on the electrode layer, the upper surface of which is configured as a substrate mounting surface,
A step of impregnating the thermal sprayed coating with an impregnating agent;
A step of performing a planarization treatment by grinding with respect to the substrate mounting surface;
The substrate processing apparatus in which the said board|substrate mounting surface was grind|polished by the process of masking the periphery of the said board|substrate mounting surface, and roughening with respect to the center part except the periphery of the said board|substrate mounting surface.

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