KR20220129725A - Method of manufacturing temperature and stress-sensitive film and temperature and stress-sensitive measuring system - Google Patents

Abstract

The present invention relates to a manufacturing method of a temperature and stress-sensitive film and a temperature and stress-measuring system, and more particularly, to a non-contact measurement system which can manufacture a flexible temperature and stress-sensing film by uniformly mixing two kinds of inorganic phosphorescent materials and a polyimide derivative compound and measure a wide range of temperature and stress.

Description

Method of manufacturing temperature and stress-sensitive film and temperature and stress-sensitive measuring system

The present invention relates to a method for manufacturing a temperature and stress sensitive film and a system for measuring temperature and stress, and more specifically, to a flexible temperature and stress sensing film by uniformly mixing two types of inorganic phosphorescent materials and a polyimide derivative compound And it relates to a non-contact measurement system that can measure a wide range of temperature and stress using the same.

Sensors act as a link between the machine and the real world. By sending real-world information to the machine, the machine can make a series of responses based on this information to meet various life or production needs. Advances in robotics, industry and advanced medical technology are placing increasingly high demands on flexible sensors. In particular, as artificial intelligence technology matures in recent years, it will become possible to "make machines replace humans", which will depend primarily on perceptions and interactions between machines and the real world. In other words, high-performance sensors will be the key to future industrial development.

Temperature and stress, the two most common signals in the real world, play a very important role in human life and production sites. In particular, industrial production places great demands on temperature and stress sensors. In most industries, temperature and stress influence each other. Therefore, the study of accurate measurement methods for these two signals has always been one of the important research directions of many researchers. In recent years, scientific researchers have invested a lot of effort and money in this field and have successfully developed flexible temperature and stress sensors based on electrical signals. However, given the complex structure, high manufacturing cost, limited use environment, and other shortcomings, these sensors are difficult to mass-produce and difficult to use in production and life. Therefore, new types of multi-measurement sensors that measure temperature and stress simultaneously must be developed to meet the growing demands of the manufacturing and medical fields. Newly developed sensors should have advantages such as flexibility, simple structure, efficient sensing, and adaptability to harsh environments.

Therefore, the present inventors have completed the present invention, recognizing that it is urgent to develop a method for manufacturing a temperature and stress sensitive film sensor and a temperature and stress measurement system required in various fields to supplement the above-mentioned problems.

Republic of Korea Patent Publication No. 10-1843854 Republic of Korea Patent Publication No. 10-1835218

An object of the present invention relates to a method for manufacturing a temperature and stress sensitive film and a system for measuring temperature and stress, and more specifically, to a temperature and stress sensing film in a flexible form by uniformly mixing two kinds of inorganic phosphorescent materials and a polyimide derivative compound. to provide a non-contact measurement system that can measure a wide range of temperatures and stresses by using them.

The technical problems to be achieved by the invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those of ordinary skill in the art from the description of the present invention.

In order to achieve the above object, the present invention provides a method for manufacturing a temperature and stress sensitive film and a system for measuring temperature and stress.

Hereinafter, the present specification will be described in more detail.

The present invention provides a method for producing a temperature and stress sensing film comprising the following steps.

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-(Hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 4,4'-methylenedicyclohexanamine (4,4'- Mixing Methylenedicyclohexanamine, MCA) and methylpyrrolidone (N-methyl-2-pyrrolidone, NMP) to prepare a compound represented by the following [Formula 2]; and

(S2) adding a temperature-sensitive inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by the [Formula 2], and performing a thermal imidization reaction to prepare a compound represented by the following [Formula 1]; A method of manufacturing a temperature and stress sensing film comprising a.

[Formula 1]

[Formula 2]

[wherein n is 1 to 1,000,000,000].

In the present invention, the step (S1) is

(S1a) mixing the MCA and NMP; and

(S1b) adding 6FDA to the mixture to prepare a compound represented by the above [Formula 1]; consists of,

The 6FDA:MCA is mixed in a molar mass ratio of 1:0.8 to 1.2.

In the present invention, the step (S2) is

(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;

(S2b) coating the mixture on a cover slip; and

(S2c) performing a thermal imidization reaction of the coated mixture at a temperature of 120 to 350 ° C. to prepare a temperature and stress sensing film; consists of,

The inorganic phosphor is added in an amount of 1 to 20 wt% based on the total mass% of the compound represented by [Formula 1].

The present invention provides a temperature and stress sensing system comprising:

a signal generator outputting a control signal;

an excitation light source controlled by a control signal of the signal generator;

a target material to which a temperature and stress sensing film is attached to emit excitation light from the excitation light source as emission light; and

A signal processing unit for extracting the emitted light as a phosphorescence attenuation signal.

In the present invention, the signal generator outputs a control signal that causes the excitation light source to have a pulse width of 5 ns to 50 ms.

In the present invention, the signal generator outputs a control signal that causes the excitation light source to have a pulse period of 10 to 1000 ms.

In the present invention, the signal processing unit is equipped with a phosphorescent filter, and the phosphorescent filter passes through a wavelength band of 620 to 670 nm.

In the present invention, the signal processing unit is equipped with a detector for obtaining a temperature-related phosphorescence attenuation signal,

The temperature-related phosphorescence decay signal is converted to a calibration curve of temperature versus phosphorescence lifetime using Equation 1:

[Equation 1]

I(t) = I ₀ × exp(-t/τ) + b

In the above equation, I(t) is the phosphorescence intensity with time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is the noise.

In the present invention, the signal processing unit is equipped with a detector for obtaining a stress-related phosphorescence attenuation signal,

The stress-related phosphorescence decay signal is converted to a calibration curve of stress versus phosphorescence intensity using Equation 2:

[Equation 2]

ε = I _M / I _a

where I _M is the intensity of the mechanoluminescence recorded after stress loading, and I _a is the intensity of the afterglow recorded before stress loading.

All matters mentioned in the method for manufacturing the temperature and stress sensitive film and the temperature and stress measuring system above apply equally unless contradictory.

The method for manufacturing a temperature and stress sensitive film of the present invention may have advantages of flexibility, long service life, wide measurement range, and high accuracy, and has strong resistance to harsh environments by using a polyimide derivative.

The temperature and stress measuring system of the present invention has the effect of being able to measure a wide range of temperature and stress.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a configuration diagram schematically showing a temperature and stress measurement system according to the present invention.
2 is a cross-sectional view of a temperature and stress sensing film according to the present invention and an enlarged view of an inorganic phosphor of the film.
3 is a spectrum and graph showing information on the temperature-related phosphorescence attenuation signal in Experimental Example 1. Referring to FIG.
4 is a spectrum and graph showing information on the stress-related phosphorescence attenuation signal in Experimental Example 2. FIG.
5 is a graph showing a comparison of the temperature measured by the thermocouple with respect to the elapsed heating time and the temperature measured by the sensing film of the present invention with respect to the elapsed heating time.
6 is a photograph showing the result of sensing stress using the temperature and stress sensing film according to the present invention.

The terms used in this specification have been selected as currently widely used general terms as possible while considering the functions in the present invention, which may vary depending on the intention or precedent of a person skilled in the art, the emergence of new technology, and the like. In addition, in a specific case, there is a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the corresponding invention. Therefore, the term used in the present invention should be defined based on the meaning of the term and the overall content of the present invention, rather than the name of a simple term.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

Numerical ranges are inclusive of the values defined in that range. Every maximum numerical limitation given throughout this specification includes all lower numerical limitations as if the lower numerical limitation were expressly written. Every minimum numerical limitation given throughout this specification includes all higher numerical limitations as if the higher numerical limitation were expressly written. All numerical limitations given throughout this specification will include all numerical ranges that are better within the broader numerical limits, as if the narrower numerical limitations were expressly written.

Hereinafter, examples of the present invention will be described in detail, but it is obvious that the present invention is not limited by the following examples.

Method of making temperature and stress sensing film

The present invention provides a temperature and stress sensing film prepared by the following method.

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-(Hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 4,4'-methylenedicyclohexanamine (4,4'- Mixing Methylenedicyclohexanamine, MCA) and methylpyrrolidone (N-methyl-2-pyrrolidone, NMP) to prepare a compound represented by the following [Formula 2]; and

(S2) adding a temperature-sensitive inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by the [Formula 2], and performing a thermal imidization reaction to prepare a compound represented by [Formula 1].

[Formula 1]

[Formula 2]

[wherein n is 1 to 1,000,000,000].

The step (S1) is a step of preparing a compound represented by [Formula 2], and may consist of the following steps.

(S1a) mixing the MCA and NMP; and

(S1b) preparing a compound represented by the [Formula 1] by adding 6FDA to the mixture.

More specifically, the 6FDA:MCA may be used in a molar mass ratio of 1:0.8 to 1.2, preferably in a molar mass ratio of 1:0.9 to 1.1. In addition, the NMP may be measured and used to have a mass-to-volume ratio (W/V) satisfying W(MCA+6FDA)/V(NMP)=0.1 to 0.2.

For example, when using the MCA (0.105 g, 0.5 mmol) and 6FDA (0.222 g, 0.5 mmol) in a molar mass ratio of 1:1, the NMP is W (MCA (0.105 g) + 6FDA (0.222 g)) Since /V(NMP(mL)) = 0.1 to 0.2 must be satisfied, 1.635 to 3.27 mL of NMP may be used. In other words, 0.105 g of MCA (0.5 mmol) and 1.635-3.27 mL of NMP can be mixed, and 0.222 g of 6FDA (0.5 mmol) can be added to the mixture.

The step (S1a) may be performed while stirring under a non-reactive gas condition, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. .

In step (S1b), the 6FDA may be slowly added dropwise to the mixture prepared in step (S1a) at room temperature or room temperature and stirred at the same time.

The stirring step in step (S1b) may be performed for 20 hours to 28 hours, preferably, it may be performed for 23 hours to 25 hours.

The step (S1b) may be performed while stirring under a non-reactive gas condition, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. .

The compound represented by [Formula 1] prepared in step (S1b) may be a transparent compound, or a compound having viscosity.

The step (S2) is a step of preparing a polyimide compound represented by the [Formula 1] by adding a temperature-sensitive inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by [Formula 2], comprising the following steps can be

(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;

(S2b) coating the mixture on a cover slip; and

(S2c) performing a thermal imidization reaction of the coated mixture at a temperature of 120 to 350 ℃ to prepare a temperature and stress sensing film.

In the step (S2), the temperature sensing inorganic phosphorescent material and the stress sensing inorganic phosphorescent material may be mixed by stirring when added, and the stirring may be performed for 0.5 to 4 hours.

The inorganic phosphor may be a phosphor including a rare earth metal. More specifically, the inorganic phosphor may be a phosphor containing at least one rare earth metal selected from the group consisting of Eu ²⁺ , Eu ³⁺ , Mn ⁴⁺ , Mn ²⁺ and Dy ³⁺ , preferably , Y ₂ O ₃ :Eu ³⁺ , Y ₂ O ₂ S:Eu ³⁺ , TiO ₂ :Eu ³⁺ , Gd ₂ O ₃ :Eu ³⁺ , GdAlO ₃ :Eu ³⁺ , La ₂ O ₂ S:Eu ³⁺ , BaMg ₂ Al ₁₀ O ₁₇ :Eu ²⁺ , SrAl ₂ O ₄ :Eu ²⁺ , (Sr,Mg) ₂ SiO ₄ :Eu ²⁺ , Mg ₄ FGeO ₆ :Mn ⁴⁺ , TiMg ₂ O ₄ : Mn ⁴⁺ , and SrAl ₂ O ₄ :Dy ³⁺ may be at least one selected from the group consisting of, most preferably Mg ₄ FGeO ₆ :Mn ⁴⁺ , SrAl ₂ O ₄ :Eu ²⁺ and SrAl ₂ O ₄ : It may be at least one selected from the group consisting of Dy ³⁺ .

The temperature-sensing inorganic phosphor may have a particle size of 0.1 to 10 μm. More specifically, when the temperature-sensing inorganic phosphor is less than 0.1 μm, it is impossible to manufacture the phosphor particles, and when the temperature-sensing inorganic phosphor is more than 10 μm, the surface of the polyimide compound represented by [Formula 1] This roughening problem may occur.

The stress-sensing inorganic phosphor may have a particle diameter of 50 to 120 μm.

The temperature and stress sensing inorganic phosphor may be added to the compound represented by the [Formula 2] in an amount of 1 to 20% by weight relative to the total mass% of the compound represented by the [Formula 2], preferably the [Formula 2] 2] may be added in an amount of 1 to 16 wt% based on the total mass% of the compound represented by

Step (S2b) may be a step of coating the mixture prepared in step (S2a) on a cover slip. More specifically, the mixture prepared in step (S2a) may be coated on a clean cover slip and then coated in a vacuum oven at 50 to 70° C. for 1 to 8 hours.

The step (S2c) may be a step of finally preparing a temperature and stress sensing film through a thermal imidization reaction. More specifically, the mixture coated in step (S2b) is subjected to a first thermal imidization reaction at 60 to 100°C, a secondary thermal imidization reaction is performed at 120 to 220°C, and 220 to 280°C to perform the tertiary thermal imidization reaction, and the quaternary thermal imidization reaction may be sequentially performed at 280 to 350 °C. In addition, when the thermal imidization reaction is carried out at less than 80 ℃, the reaction does not occur, and when carried out above 350 ℃, the produced film is burned, so that a film form is not obtained.

The thermal imidization reaction may be performed under a non-reactive gas condition, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. In addition, the first thermal imidization reaction may be performed for 0.5 to 6 hours, and the second to fourth thermal imidization reaction may be performed for 0.1 to 5 hours.

The temperature and stress sensing film may be in the form of a transparent or translucent film, and may have a size of 1 mm 2 to 1 m 2 and a thickness of 40 to 100 μm.

Temperature and Stress Measurement System

The present invention provides a signal generator for outputting a control signal (10); an excitation light source (20) controlled by a control signal of the signal generator (10); a target material 30 to which a temperature and stress sensing film 31 is attached to emit excitation light from the excitation light source 20 as emission light; and a signal processing unit 40 for extracting the emitted light as a phosphorescence attenuation signal.

The temperature and stress sensing film 31 may be manufactured and applied in the same manner as described above.

The control signal output by the signal generator 10 may be a pulse signal.

The control signal enables the excitation light source 20 to emit pulsed light with a pulse period of 10 to 1000 ms.

The control signal allows the excitation light source 20 to emit pulsed light with a pulse width of 1 to 5 ms.

The wavelength of the excitation light source 20 controlled by the control signal of the signal generator 10 may be in the range of 250 to 430 nm, preferably in the range of 260 to 410 nm.

The excitation light source 20 has a power of 0 to 20 W, preferably 0 to 15 W.

The excitation light source 20 may be an LED lamp or a laser, but is not limited thereto.

The target material 30 is a material whose temperature and stress are measured by emitting the excitation light received from the excitation light source 20 as emission light, and the target material 30 is the temperature and stress sensing film 31 . It may be a material of a metallic component that can be attached.

The signal processing unit 40 may include two phosphorescent filters 41 , a detector 42 , and a computer 43 connected thereto.

A band pass filter may be used for the phosphorescent filter 41, and when measuring temperature, the band pass filter can pass a wavelength band of 620 to 670 nm, and when measuring stress, the band pass filter is It can pass through a wavelength band of 480 to 700 nm.

The phosphorescent filter 41 may be mounted on a lens of the detector 42 .

The temperature and stress related phosphorescent signal received from the target material 30 may pass through the phosphorescent filter 41 to be acquired by the detector 42 and transmitted to the computer 43 .

The detector 42 may be a CCD camera or a CMOS high-speed camera, but is not limited thereto as long as it is a detector capable of measuring to detect the emitted light emitted from the target material 30 .

According to a preferred embodiment of the present invention, when measuring the temperature, the excitation light received from the excitation light source 20 is converted into light emitted by the temperature and stress sensing film 31 attached to the target material 30 . can be emitted. The emitted light may be filtered into a temperature-related phosphorescence signal by passing through the phosphorescence filter 41 and extracted as a phosphorescence attenuation signal. The extracted phosphorescence attenuation signal may be converted into a calibration curve of temperature versus phosphorescence lifetime through the following [Equation 1] in the signal processing unit 40 .

[Equation 1]

I(t) = I ₀ × exp(-t/τ) + b

In the above equation, I(t) is the phosphorescence intensity with time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is the noise.

According to a preferred embodiment of the present invention, when measuring the stress, the excitation light may fill the inorganic phosphor of the temperature and stress sensing film 31 before being emitted as emission light. Thereafter, when the excitation light source 20 is turned off, the charged inorganic phosphor may emit afterglow.

After the afterglow is emitted, it may apply stress to the temperature and stress sensing film 31 .

The temperature and stress sensing film 31 to which the stress is applied may generate mechanoluminescence.

The stress-related phosphorescence signal received from the target material 30 may pass through the phosphorescent filter 41 to be obtained by the detector 42 and transmitted to the computer 43 to be extracted as a phosphorescence attenuation signal. The extracted phosphorescence attenuation signal may be converted into a calibration curve of the stress to intensity ratio through the following [Equation 2] in the signal processing unit 40 .

[Equation 2]

ε = I _M / I _a

where I _M is the intensity of the mechanoluminescence recorded after stress loading, and I _a is the intensity of the afterglow recorded before stress loading.

The temperature and stress measuring system 1 can measure the temperature and stress of a target material having a wide temperature range of -200 to 400° C. and a wide stress range of 0.1 to 20 Mpa, and thus can measure the temperature and stress of a bioengineering robot or biomedicine. It can be used for temperature and stress measurements in technology.

Advantages and features of the present invention, and methods for achieving them, will become apparent with reference to the embodiments described below in detail. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

Preparation Example 1. Preparation of a compound represented by [Formula 2]

0.105 g of MCA (0.5 mmol) and 2.2 mL of NMP were mixed in a glass reactor at room temperature under nitrogen conditions. Then, 0.222 g of 6FDA (0.5 mmol) was slowly added to the mixture and stirred at room temperature for 24 hours to prepare a compound represented by [Formula 2].

Example 1. Temperature and Stress Sensing Film Preparation

SAOED (SrAl ₂ O ₄ : Eu ²⁺ , Dy ³⁺ ) and MFG (Mg ₄ FGeO ₆ :Mn ⁴⁺ ) were added to the compound represented by [Formula 2] prepared in 1.1, and stirred vigorously for 1 hour. did. The mixture was coated on clean coverslips and stored in a vacuum oven at 60° C. for 4 hours. Thermal imidization reaction was performed at 80° C. for 2 hours and at 160° C., 240° C., and 300° C. for 1 hour under a nitrogen atmosphere. A composite film of SAOED + MFG/polyimide was prepared by peeling off the final product from the cover slip. The cross-section of the composite film and the inorganic phosphorescent materials SAOED and MFG layers are shown in FIG. 2 below.

Experimental Example 1. Confirmation of temperature measurement

The excitation light was controlled by generating a pulse signal having a pulse width of 50 ms and a pulse period of 100 ms through a signal transmitter, and the excitation light was irradiated with a wavelength of 385 nm, and an LED was used as the excitation light source. Next, the temperature and stress sensing film to which the target material is attached receives the excitation light and emits emitted light, and the emitted light passes through the phosphorescence filter and is filtered into a temperature-related phosphorescence signal to obtain a temperature-related phosphorescence attenuation signal. was extracted with And, the phosphorescence attenuation signal was converted into a calibration curve of temperature versus phosphorescence lifetime through [Equation 1] in the signal processing unit, and finally, temperature information on the calibration curve of temperature versus phosphorescence lifetime is shown in FIG. . Fig. 3a is a spectrum showing the decay behavior of phosphorescence at 654 nm under excitation of 385 nm UV light, Fig. 3b is a spectrum showing the decay of phosphorescence at 654 nm at 20 °C and 100 °C, and Fig. 3c is temperature vs. decay lifetime. is a graph showing the calibration curve of

Experimental Example 2. Stress measurement confirmation

The phosphorescent filter uses a band-pass filter of 480 nm, and generates a pulse signal with a pulse width of 50 ms and a pulse period of 100 ms through a signal transmitter to control the excitation light, and irradiate the excitation light with a wavelength of 400 nm and LED was used as the excitation light source. The inorganic phosphorescent material SAOED of the temperature and stress sensing film to which the target material was attached was charged with the excitation light, and after the excitation light source was turned off, the afterglow was emitted. And a stress-related phosphorescence decay signal was extracted from the mechanoluminescence generated by the afterglow. And, the phosphorescence attenuation signal was converted into a calibration curve of the stress-to-strength ratio through [Equation 2] in the signal processing unit, and finally, the stress information for the calibration curve of the stress-to-phosphorescence lifetime is shown in FIG. . Fig. 4a is a spectrum showing the decay behavior of phosphorescence at 520 nm under excitation of 400 nm UV light, Fig. 4b is a spectrum showing the decay of phosphorescence at 520 nm, and Fig. 4c is a graph showing a calibration curve of stress versus decay lifetime. to be. 6 is a photograph showing a result of sensing stress using the temperature and stress sensing film of the present invention.

From the above description, those skilled in the art to which the present invention pertains will understand that the present invention may be implemented in other specific forms without changing the technical spirit or essential characteristics thereof. In this regard, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

Claims (9)

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-
(Hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 4,4'-methylenedicyclohexanamine (4,4'-Methylenedicyclohexanamine, MCA) and methylpyrrolidone (N-methyl-2-pyrrolidone, NMP) by mixing [ preparing a compound represented by Formula 2]; and
(S2) adding a temperature-sensitive inorganic phosphor and a stress-sensitive inorganic phosphor to the compound represented by the [Formula 2], and performing a thermal imidization reaction to prepare a compound represented by [Formula 1]; A method of manufacturing a temperature and stress sensing film comprising:
[Formula 1]

[Formula 2]

[wherein n is 1 to 1,000,000,000]. According to claim 1,
The step (S1) is
(S1a) mixing the MCA and NMP; and
(S1b) adding 6FDA to the mixture to prepare a compound represented by the above [Formula 1]; consists of,
The 6FDA:MCA is 1: a method of manufacturing a temperature and stress sensing film, characterized in that mixed in a molar mass ratio of 0.8 to 1.2. According to claim 1,
The step (S2) is
(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;
(S2b) coating the mixture on a cover slip; and
(S2c) performing a thermal imidization reaction of the coated mixture at a temperature of 120 to 350 ° C. to prepare a temperature and stress sensing film; consists of,
The inorganic phosphorescent material is a method of manufacturing a temperature and stress sensing film, characterized in that it is added in an amount of 1 to 20% by weight based on the total mass% of the compound represented by [Formula 1]. a signal generator outputting a control signal;
an excitation light source controlled by a control signal of the signal generator;
a target material to which a temperature and stress sensing film is attached to emit excitation light from the excitation light source as emission light; and
and a signal processing unit for extracting the emitted light as a phosphorescence attenuation signal. 5. The method of claim 4,
wherein the signal generator outputs a control signal that causes the excitation light source to have a pulse width of 5 ns to 50 ms. 5. The method of claim 4,
wherein the signal generator outputs a control signal to cause the excitation light source to have a pulse period of 10 to 1000 ms. 5. The method of claim 4,
The signal processing unit is equipped with a phosphorescent filter,
The phosphorescent filter is a temperature and stress sensing system, characterized in that it passes through a wavelength band of 620 to 670 nm. 5. The method of claim 4,
The signal processing unit is equipped with a detector for obtaining a temperature-related phosphorescence attenuation signal,
The temperature and stress sensing system, characterized in that the temperature-related phosphorescence decay signal is converted into a calibration curve of temperature versus phosphorescence lifetime using the following [Equation 1]:
[Equation 1]
I(t) = I ₀ × exp(-t/τ) + b
In the above equation, I(t) is the phosphorescence intensity with time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is the noise. 5. The method of claim 4,
The signal processing unit is equipped with a detector for obtaining a stress-related phosphorescence attenuation signal,
A temperature and stress sensing system, characterized in that the stress-related phosphorescence decay signal is converted into a calibration curve of the stress-to-intensity ratio using the following [Equation 2]:
[Equation 2]
ε = I _M / I _a
where I _M is the intensity of the mechanoluminescence recorded after stress loading, and I _a is the intensity of the afterglow recorded before stress loading.

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