KR20220121567A - Monitoring system for evapoporation process and method thereof - Google Patents

Abstract

The monitoring system for a deposition process includes: a vacuum chamber having a processing space (S) sealed therein with a substrate disposed in an upper part of the processing (S); a crucible disposed in the processing space to have an inner space filled with a source material, having an upper surface penetrated in a vertical direction to form a plurality of jet outlets, and allowing the source material vaporized through the jet outlets to be deposited on the substrate; a pressure sensor installed in the inner space of the crucible and periodically measuring and transmitting the inner pressure of the inner space; a QCM sensor installed in the processing space of the vacuum chamber, and periodically measuring and transmitting a deposition rate which is a speed by which the source material is deposited on the substrate; and a control unit electrically connected with the pressure sensor and the QCM sensor, collecting the inner pressure and the deposition rate in real time, separately measuring an inner pressure inclination and a deposition rate inclination, which are variations of the inner pressure and the deposition rate according to the flow of time, and comparing changes of the inner pressure inclination and the deposition rate inclination. Therefore, the present invention is capable of improving productivity and efficiency.

Description

Monitoring system and method for deposition process

The present invention relates to a monitoring system for a deposition process and a method therefor, and more particularly, by monitoring the deposition rate of the substrate and the internal pressure of the crucible inside the vacuum chamber to detect nozzle clogging, denaturation and exhaustion of the source material. It relates to a monitoring system and method for a deposition process capable of preventing substrate defects in advance by monitoring.

In general, vacuum heating deposition technology is a technology used to manufacture thin films in semiconductors and displays, and a crucible containing a material material and a heating element capable of heating the crucible are installed in a vacuum chamber, and a substrate is installed thereon , a technique in which a material material is evaporated in a vacuum to become a coating on a substrate by heating the crucible.

Although this vacuum heating deposition method has been mainly used for the production of small-scale pure thin films in the laboratory, its industrial application has been rapidly expanded as it has been widely used in the production of organic thin films and metal thin films of OLED, a flat panel display device that has recently been in the spotlight.

The deposition source may include a housing, a heater for heating the source material, a crucible containing the source material, and a nozzle through which the source material is sprayed.

Here, the nozzle frequently exhibits nozzle clogging, denaturation and exhaustion of the source material depending on process conditions and the type of source material. When such nozzle clogging, denaturation and exhaustion of the source material occur, the uniformity of deposition cannot be maintained, so that there is a problem in that the substrate is defective.

Republic of Korea Patent Publication No. 10-2019-0132888 (2019.11.29.)

The problem to be solved by the present invention is to monitor the deposition rate of the substrate and the internal pressure of the crucible inside the vacuum chamber to detect nozzle clogging, denaturation and exhaustion of the source material, and through this, to prevent substrate defects To provide a monitoring system and method for a deposition process that can improve productivity and efficiency.

Other problems to be solved by the present invention will become more apparent from the following detailed description and drawings.

According to an embodiment of the present invention, a monitoring system for a deposition process includes a vacuum chamber having a sealed processing space (S) therein and in which a substrate is disposed on the processing space (S); a crucible disposed in the processing space and having an internal space (H) filled with a source material, the upper surface of which is penetrated in the vertical direction to form a plurality of jets, and the source material vaporized through the jets is deposited on the substrate; a pressure sensor installed in the inner space (H) of the crucible and periodically measuring and transmitting the inner pressure of the inner space (H); a QCM sensor installed in the processing space of the vacuum chamber and periodically measuring and transmitting a deposition rate, which is a rate at which the source material is deposited on the substrate; And it is electrically connected to the pressure sensor and the QCM sensor, the internal pressure and the deposition rate are collected in real time, and the internal pressure gradient and the deposition rate gradient, which are changes in the internal pressure and the deposition rate over time, are measured. and a control unit that measures each and compares changes in the internal pressure gradient and the deposition rate gradient.

Here, when the gradient of the deposition rate is within a preset range and the internal pressure gradient belonging to the preset range increases, it may be determined that a problem has occurred in the deposition process.

In addition, the controller may determine that the clogging phenomenon has occurred when the increased internal pressure gradient returns to the internal pressure gradient of the preset range within a predetermined time.

In addition, the controller may determine that the source material is exhausted when the increased internal pressure gradient changes to a negative (-) value within a predetermined time.

On the other hand, the pressure sensor is inserted and installed in an insertion hole penetrating the upper surface of the crucible, the housing having a passage communicating the processing space (S) and the inner space (H), and is installed in the passage to the passage a diaphragm bent according to the pressure of the internal space (H), a first electrode plate disposed on the diaphragm and spaced apart from the diaphragm by a first interval, a first insulator supporting the first electrode plate, forming a connection space (B) together with the housing and the diaphragm, and having a through hole communicating the connection space (B) and the processing space (S); and a capacitance measuring unit capable of calculating a first capacitance between the diaphragm and the first electrode plate, and a pressure converting unit capable of converting the first capacitance into a pressure.

According to another embodiment of the present invention, the monitoring method for a deposition process is installed in the processing space of a vacuum chamber in which a substrate is disposed in a closed processing space, disposed under the substrate in the processing space, and filled therein A data collection step of collecting in real time the deposition rate, which is the internal pressure of the crucible in which the source material is vaporized and a jet hole for depositing on the substrate is formed penetrating in the vertical direction, and the rate at which the source material is deposited on the substrate; a slope measuring step of measuring an internal pressure gradient and a deposition rate gradient, which are changes in the internal pressure and the deposition rate over time, respectively; and a gradient comparison step of comparing changes in the internal pressure gradient and the deposition rate gradient.

Here, the step of comparing the slope may be a step of determining that a problem has occurred in the deposition process when the slope of the deposition rate is within a predetermined range and the internal pressure slope belonging to the predetermined range increases.

In addition, the step of comparing the slope may be a step of determining that the clogging phenomenon has occurred when the increased slope of the internal pressure returns to the slope of the internal pressure of the preset range within a predetermined time.

In addition, the gradient comparison step may be a step of determining that the source material is exhausted when the increased internal pressure gradient changes to a negative value within a predetermined time.

The monitoring system and method for a deposition process according to the present invention monitor the deposition rate of the substrate and the internal pressure of the crucible inside the vacuum chamber to determine whether the nozzle clogging, the denaturation and exhaustion of the source material, and through this , there is a remarkable effect that can improve productivity and efficiency by preventing substrate defects.

1 is a block diagram of a monitoring system for a deposition process according to an embodiment of the present invention.
FIG. 2 is a control block diagram of the monitoring system for the deposition process of FIG. 1 .
FIG. 3A is a cross-sectional view of the sensor unit of the first type applied to the monitoring system for the deposition process of FIG. 1 .
3B is a cross-sectional view of a sensor unit of a second type applied to the monitoring system for the deposition process of FIG. 1 .
4A is a cross-sectional view of a sensor unit of a third type applied to the monitoring system for the deposition process of FIG. 1 .
FIG. 4B is a cross-sectional view of a sensor unit of a fourth type applied to the monitoring system for the deposition process of FIG. 1 .
5 is a cross-sectional view of a sensor unit of a fifth type applied to the monitoring system for the deposition process of FIG. 1 .
FIG. 6 is a view showing the arrangement of the first electrode and the second electrode when viewed from the side A of FIG. 5 .
7 is a view for explaining the difference between the first capacitance (Cm) and the second capacitance (Cr) of the sensor unit of FIGS. 2 to 6 .
8 is a graph showing the internal pressure and deposition rate of the crucible over time.
9 is a flowchart illustrating a flow of a monitoring method for a deposition process according to an embodiment of the present invention.

Since the present invention can have various changes and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention. In describing each figure, like reference numerals have been used for like elements.

Terms such as first, second, A, and B may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, a second component may also be referred to as a first component. and/or includes a combination of a plurality of related listed items or any of a plurality of related listed items.

When a component is referred to as being “connected” or “connected” to another component, it may be directly connected or connected to the other component, but it is understood that other components may exist in between. it should be On the other hand, when it is said that a certain element is "directly connected" or "directly connected" to another element, it should be understood that the other element does not exist in the middle.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It is to be understood that this does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

1 is a block diagram of a monitoring system for a deposition process according to an embodiment of the present invention, FIG. 2 is a control block diagram of the monitoring system for a deposition process of FIG. 1, and FIG. 3(a) is a diagram for the deposition process of FIG. 1 A cross-sectional view of a sensor unit of a first type applied to the monitoring system, FIG. 3(b) is a cross-sectional view of a sensor unit of a second type applied to the monitoring system for the deposition process of FIG. 1, and FIG. 4(a) is the deposition of FIG. It is a cross-sectional view of a sensor unit of a third type applied to a monitoring system for a process, FIG. 4( b ) is a cross-sectional view of a sensor unit of a fourth form applied to the monitoring system for a deposition process of FIG. 1 , and FIG. 5 is the deposition process of FIG. 1 . It is a cross-sectional view of a sensor unit of a fifth type applied to a monitoring system for use, and FIG. 6 is a view showing the arrangement of the first electrode and the second electrode as viewed from the side A in FIG. 5, and FIG. 7 is the sensor unit of FIGS. 2 to 6 is a diagram for explaining the difference between the first capacitance (Cm) and the second capacitance (Cr) of It is a flowchart showing the flow of a monitoring method for a deposition process according to an embodiment.

1 and 2, the monitoring system 1 for a deposition process according to an embodiment of the present invention includes a vacuum chamber 10, a crucible 30, a pressure sensor 100, a control unit 210, and a power supply unit. 220 , a heating unit 230 and a QCM sensor 240 .

Referring to FIG. 1 , the vacuum chamber 10 has a high-vacuum (1X10-6torr or less) processed processing space S in the sealed interior. The substrate 20 is installed in the upper part of the processing space S, and the crucible 30 is installed in the lower part.

The crucible 30 has an internal space H in which a source material (such as an organic light emitting material) is accommodated. The upper surface of the crucible 30 is formed through a plurality of ejection holes 50 in the vertical direction. The crucible 30 has an insertion hole 70 whose upper surface is formed to penetrate in the vertical direction to communicate the processing space S and the inner space H. The source material heated and vaporized in the crucible 30 is discharged through the outlet 50 and deposited on the substrate 20 . Titanium may be used as a material of the crucible 30 .

Referring to FIG. 1 , the pressure sensor 100 according to the embodiment of the present invention is for measuring the pressure of the inner space H of a crucible 30 used as an evaporation source in the vacuum chamber 10, and the sensor unit 110 ), including a capacitance measuring unit 120 and a pressure converting unit 130 . The pressure sensor 100 is electrically connected to the control unit 210 , and transmits the measured pressure measured in the inner space H of the crucible 30 to the control unit 210 .

Referring to FIG. 3( a ), the sensor unit 110 of the first type includes a housing 111 , a diaphragm 112 , a first electrode plate 113 , a first insulator 115 , and a fixing ring 119 . include

Since the sensor unit 110 is located inside the crucible 30 , it is heated to the heating temperature of the crucible 30 . Since the crucible 30 is heated to a temperature at which the source material is evaporated, even if the source material is buried in the sensor unit 110 , it is evaporated again.

The housing 111 has a cylindrical shape and is open at the top and bottom, and has a passage communicating the processing space (S) and the inner space (H). The housing 111 is inserted and installed in the insertion hole 70 .

The diaphragm 112 is installed in the passage of the housing 111 in a disk shape to separate and block the passage. The diaphragm 112 may be bent when the pressure of the medium to be measured (internal space H) is applied. The diaphragm 112 may be formed of a metal material such as titanium that can be used at a high temperature that is the evaporation temperature of the source material. The thickness of the diaphragm 112 should be sufficiently small to allow bending deformation to occur. For example, a metal plate having a thickness of about 0.1 mm may be used.

The first electrode plate 113 is installed in the passage of the housing 111 in the shape of a disk. A conductive metal may be used for the first electrode plate 113 . The first electrode plate 113 is positioned on the diaphragm 112 and spaced apart from the diaphragm 112 by a first interval.

The first insulator 115 is installed at the first interval to support the first electrode plate 113 . The first insulator 115 forms a connection space B together with the housing 11 and the diaphragm 112 . The first insulator 115 may be made of a ceramic material. The first insulator 115 has a through-hole communicating the connection space B and the processing space S so that the pressure of the connection space B is equal to the pressure of the processing space S.

The fixing ring 119 has an outer circumferential surface close to and fixed to the inner circumferential surface of the housing 111 so that the inner space H is sealed in a ring shape. A diaphragm 112 is fixed to the inner circumferential surface of the fixing ring 119 . The fixing ring 119 blocks the passage together with the diaphragm 112 to seal the inner space (H).

Referring to FIG. 3B , the sensor unit 110 of the third type further includes a second electrode plate 114 and a second insulator 116 in the sensor unit 110 according to the first embodiment. The second electrode plate 114 has a disk shape and is installed in the passage of the housing 111 . A conductive metal may be used for the second electrode plate 114 . The second electrode plate 114 is positioned on the first electrode plate 113 and is spaced apart from the first electrode plate 113 by a second interval. In this case, the first interval and the second interval may be the same as each other.

The second insulator 116 is installed between the first electrode plate 113 and the second electrode plate 114 . The second insulator 116 supports the lower surface of the second electrode plate. The second insulator 116 may be made of a ceramic material. It is preferable that the first insulator 115 and the second insulator 116 have the same thickness.

Referring to FIG. 4A , the sensor unit 110 of the third type includes a housing 111 , a diaphragm 112 , a first electrode plate 113 , a first insulator 115 , and an insulating plate 117 . do.

Since the sensor unit 110 is located inside the crucible 30 , it is heated to the heating temperature of the crucible 30 . Since the crucible 30 is heated to a temperature at which the source material is evaporated, even if the source material is buried in the sensor unit 110 , it is evaporated again.

The housing 111 has a cylindrical shape and is open at the top and bottom, and has a passage communicating the processing space (S) and the inner space (H). The housing 111 is inserted and installed in the insertion hole 70 .

The diaphragm 112 is installed in the passage of the housing 111 in a disk shape to separate and block the passage. The diaphragm 112 may be bent when the pressure of the medium to be measured (internal space H) is applied. The diaphragm 112 may be formed of a metal material such as titanium that can be used at a high temperature that is the evaporation temperature of the source material. The thickness of the diaphragm 112 should be sufficiently small to allow bending deformation to occur. For example, a metal plate having a thickness of about 0.1 mm may be used.

The first electrode plate 113 is installed in the passage of the housing 111 in the shape of a disk. A conductive metal may be used for the first electrode plate 113 . The first electrode plate 113 is positioned on the diaphragm 112 and spaced apart from the diaphragm 112 by a first interval.

The first insulator 115 is installed at the first interval to support the first electrode plate 113 . The first insulator 115 forms a connection space B together with the housing 11 and the diaphragm 112 . The first insulator 115 may be made of a ceramic material. The first insulator 115 has a through-hole communicating the connection space B and the processing space S so that the pressure of the connection space B is equal to the pressure of the processing space S.

The insulating plate 117 has a disk shape and an upper surface is coupled to a lower surface of the diaphragm 112 . The insulating plate 117 may be used in a form integrated with the diaphragm 112 (ie, the upper surface of the insulating plate 117 is coated with a metal). The insulating plate 117 may be bent together with the diaphragm 112 according to the pressure of the inner space (H). The insulating plate 117 may be formed of a thin-film ceramic material. When the insulating plate 117 is used, a frame such as the fixing ring 119 required to maintain the tension (tightness) of the diaphragm 112 is not required.

Referring to FIG. 4B , the sensor unit 110 of the fourth type further includes a second electrode plate 114 and a second insulator 116 in the sensor unit 110 according to the third embodiment. The second electrode plate 114 has a disk shape and is installed in the passage of the housing 111 . A conductive metal may be used for the second electrode plate 114 . The second electrode plate 114 is positioned on the first electrode plate 113 and is spaced apart from the first electrode plate 113 by a second interval. In this case, the first interval and the second interval may be the same as each other.

The second insulator 116 is installed between the first electrode plate 113 and the second electrode plate 114 . The second insulator 116 supports the lower surface of the second electrode plate. The second insulator 116 may be made of a ceramic material. It is preferable that the first insulator 115 and the second insulator 116 have the same thickness.

5 and 6 , the sensor unit 110 of the fifth type includes a housing 111 , a diaphragm 112 , a first electrode plate 113 , a first insulator 115 , and a second electrode plate 114 . ), and a second insulator 116 and a fixing ring 119 .

Since the sensor unit 110 is located inside the crucible 30 , it is heated to the heating temperature of the crucible 30 . Since the crucible 30 is heated to a temperature at which the source material is evaporated, even if the source material is buried in the sensor unit 110 , it is evaporated again.

The housing 111 has a cylindrical shape and is open at the top and bottom, and has a passage communicating the processing space (S) and the inner space (H). The housing 111 is inserted and installed in the insertion hole 70 .

The diaphragm 112 is installed in the passage of the housing 111 in a disk shape to separate and block the passage. The diaphragm 112 may be bent when the pressure of the medium to be measured (internal space H) is applied. The diaphragm 112 may be formed of a metal material such as titanium that can be used at a high temperature that is the evaporation temperature of the source material. The thickness of the diaphragm 112 should be sufficiently small to allow bending deformation to occur. For example, a metal plate having a thickness of about 0.1 mm may be used.

The third insulator 118 is installed on the upper portion of the diaphragm 112 , and forms a connection space B together with the housing 11 and the diaphragm 112 . The third insulator 118 may be a ceramic material. In the third insulator 118 , a through hole (not shown) communicating the connection space B and the processing space S is formed so that the pressure of the connection space B is equal to the pressure of the processing space S.

The first electrode plate 113 is coupled to the lower surface of the third insulator 118 in a circular plate shape, and is disposed in the center of the third insulator 118 . A conductive metal may be used for the first electrode plate 113 .

The second electrode plate 114 is coupled to the lower surface of the third electrode plate 118 in a circular plate shape, and is spaced apart from the first electrode plate 113 by a third interval. Specifically, as shown in FIG. 5 , the first electrode plate 113 may be disposed in the center of the second electrode plate 114 in an annular or donut shape.

The fixing ring 119 has an outer circumferential surface close to and fixed to the inner circumferential surface of the housing 111 so that the inner space H is sealed in a ring shape. A diaphragm 112 is fixed to the inner circumferential surface of the fixing ring 119 . The fixing ring 119 blocks the passage together with the diaphragm 112 to seal the inner space (H).

The fixing ring 119 has an outer circumferential surface close to and fixed to the inner circumferential surface of the housing 111 so that the inner space H is sealed in a ring shape. A diaphragm 112 is fixed to the inner circumferential surface of the fixing ring 119 . The fixing ring 119 blocks the passage together with the diaphragm 112 to seal the inner space (H).

The diaphragm 112 may have a groove formed in a downward direction at a position corresponding to the third interval. By doing this, the first portion of the diaphragm 112 opposite to the first electrode plate 113 is bent by the pressure of the internal space H, and the portion of the diaphragm 112 opposite to the second electrode plate has one end of a fixed ring. Since it is fixed to (119), it maintains a flat state.

In addition, the pressure sensor 100 according to an embodiment of the present invention may further include a baffle (not shown). The baffle is disposed under the diaphragm 112 and installed in the passage of the housing 111 . The baffle may prevent the cluster from directly colliding with the diaphragm 112 while passing the vaporized raw material. The baffle 118 may have a plate shape or a screw shape installed in a double layer.

Meanwhile, the diaphragm 112 , the first electrode plate 113 , and the second electrode plate 114 may be electrically connected to the capacitance measuring unit 120 through a conducting wire or a wire, which can be easily implemented by a person skilled in the art. Since it is possible, a description thereof will be omitted.

Referring to FIG. 7 , the capacitance measuring unit 120 measures the first capacitance Cm between the diaphragm 112 and the first electrode plate 113 . The capacitance measuring unit 120 measures the second capacitance Cr between the first electrode plate 113 and the second electrode plate 114 . The capacitance measuring unit 120 calculates the measured capacitance Cd, which is the difference between the first capacitance Cm and the second capacitance Cr. The first insulator 115 and the second insulator 116 are preferably insulators such as ceramics having the same thickness.

This is to prevent the capacitance value itself from changing due to the change in dielectric constant as the temperature increases. That is, since the dielectric constant of the insulator is very large, when an insulator having the same thickness is inserted in the first gap and the second gap, the effect of the dielectric constant change due to the temperature rise is hardly affected.

Meanwhile, in the case of the sensor unit 110 of FIGS. 4 and 5 , the capacitance measuring unit 120 may measure the first capacitance Cn between the diaphragm 112 and the first electrode plate 113 . have. The capacitance measuring unit 120 may measure the second capacitance Cp between the diaphragm 112 and the second electrode plate 114 . The capacitance measuring unit 120 may calculate the measured capacitance Cd, which is a difference between the first capacitance Cn and the second capacitance Cp.

The pressure converting unit 130 converts the measured capacitance Cd measured by the capacitance measuring unit 120 into a measured pressure. The pressure converter 130 transmits the measured pressure to the controller 210 .

The heating unit 230 is installed in the crucible 30 to supply a heat source to the crucible 30 .

The power supply 220 is electrically connected to the heating unit 230 . The power supply 220 supplies power to the heating unit 230 . As the type of power, both DC power and AC power may be used. The power supply 220 may adjust the power output by a power control signal transmitted from the control unit 210 . The power control signal generally uses a 0 to 10V signal, and various signal methods other than this may be used.

The QCM sensor 240 is disposed in the processing space of the vacuum chamber 10 and is installed in a position close to the substrate 20 . The QCM sensor 240 measures the deposition rate at which the source material reaches the substrate 20 and is deposited. The QCM sensor 240 is electrically connected to the control unit 210 , and periodically calculates the deposition rate (A/s), which is the rate at which the raw material 40 is deposited on the substrate 20 , and transmits it to the control unit 210 . .

The QCM sensor 240 may be a quartz crystal monitor (QCM) using a quartz vibrator. When a deposition material is deposited on the quartz vibrator, the weight of the quartz vibrator increases, and accordingly, the frequency of the vibrator decreases. Therefore, the QCM sensor 240 can detect the amount deposited on the quartz vibrator by measuring the change in the frequency of the vibrator.

In order to increase the reproducibility of the deposition rate measurement of the QCM sensor 240, it is preferable that the vacuum degree of the vacuum chamber 10 processing space S is constant. In addition, it is preferable to minimize the separation distance between the QCM sensor 240 and the crucible 30 .

The control unit 210 is electrically connected to the pressure sensor 100 , the power supply unit 220 , and the QCM sensor 240 . The control unit 210 may compare the measured pressure transmitted from the pressure sensor 100 with a preset set pressure to adjust the power supplied by the power supply unit 220 to the heating unit 230 . Specifically, the control unit 210 increases the power supplied to the power supply unit 220 when the measured pressure is less than the set pressure. The control unit 210 lowers the supply power of the power supply unit 220 when the measured pressure is greater than the set pressure.

Referring to FIG. 8 , the controller 210 may compare the measured pressure value and the deposition rate over time. The control unit 210 may determine that the clogging phenomenon in which the raw material blocks the outlet 50 has occurred when the value of the measured pressure increases while the deposition rate decreases with the passage of time.

The control unit 210 includes a data collection unit 212 , a slope measurement unit 214 , and a comparison determination unit 216 . The data collection unit 212 collects the internal pressure and the deposition rate periodically transmitted from the pressure sensor 100 and the QCM sensor 240 in real time. The slope measuring unit 214 measures the internal pressure and the deposition rate measured by the data collection unit 212, respectively, the internal pressure slope and the deposition rate slope, which are changes in the internal pressure and the deposition rate over time. . The comparison determination unit 216 compares the change in the gradient of the internal pressure and the gradient of the deposition rate.

Specifically, the comparison determination unit 216 may determine that a problem has occurred in the deposition process when the gradient of the deposition rate is within a preset range and the internal pressure gradient belonging to the preset range increases (source material). degeneration occurs).

The comparison determination unit 216 may determine that the clogging phenomenon has occurred when the increased internal pressure gradient returns to the internal pressure gradient within the preset range within a predetermined time.

The comparison determination unit 216 may determine that the source material is exhausted when the increased internal pressure gradient changes to a negative value within a predetermined time.

9 is a flowchart illustrating a flow of a monitoring method for a deposition process according to an embodiment of the present invention. Hereinafter, a monitoring method for a deposition process according to the present embodiment will be described with reference to FIG. 9 .

First, it is installed in the processing space (S) of the vacuum chamber 10 in which the substrate 20 is disposed in the sealed processing space (S), is disposed under the substrate 20 in the processing space (S), and inside The internal pressure and the rate at which the source material 40 is deposited on the substrate 20 and the internal pressure of the crucible 30 in which the outlet 50 for vaporizing the filled source material 40 and depositing it on the substrate 20 is formed through the vertical direction. The phosphorus deposition rate is collected in real time at preset time intervals (S10).

Next, the internal pressure gradient and the deposition rate gradient, which are changes in the internal pressure and the deposition rate with the passage of time, are respectively measured ( S20 ).

Next, the internal pressure gradient and the change in the deposition rate gradient are compared (S30).

Specifically, when the gradient of the deposition rate is within a preset range and the internal pressure gradient belonging to the preset range increases, it is determined that a problem has occurred in the deposition process (S30).

On the other hand, when the increased internal pressure gradient returns to the internal pressure gradient of the preset range within a predetermined time, it is determined that the clogging phenomenon has occurred (S41)

In addition, when the increased internal pressure gradient changes to a negative (-) value within a predetermined time, it is determined that the source material 40 is exhausted (S42).

In the case of the steps S30, S41, and S42, a warning sound or a warning message may be transmitted to the manager indicating that a problem has occurred in the deposition process.

As a result, the monitoring system for the deposition process and the method according to the present invention monitor the deposition rate of the substrate and the internal pressure of the crucible inside the vacuum chamber to determine whether nozzle clogging, denaturation and exhaustion of the source material. , through this, it is possible to prevent substrate defects and improve productivity and efficiency.

Although the present invention has been described in detail through preferred embodiments, other embodiments are also possible. Therefore, the spirit and scope of the claims described below are not limited to the preferred embodiments.

1: Monitoring system for deposition process 10: Vacuum chamber
20: substrate 30: crucible
40: source material 50: outlet
100: pressure sensor 110: sensor unit
111: housing 112: diaphragm
113: first electrode plate 114: second electrode plate
115: first insulator 116: second insulator
117: insulating plate 1 18: third insulator
118: fixing ring 120: capacitance measuring unit
130: pressure conversion unit 210: control unit
212: data collection unit 214: slope measuring unit
216: comparison determination unit 220: power supply
230: heating unit 240: QCM sensor
S: Processing space H: Internal space
B: Connection space

Claims (9)

a vacuum chamber having a sealed processing space therein and in which a substrate is disposed on an upper portion of the processing space;
a crucible disposed in the processing space and having an inner space filled with a source material, the upper surface of which is penetrated in the vertical direction to form a plurality of jets, and a source material vaporized through the jets is deposited on the substrate;
a pressure sensor installed in the inner space of the crucible and periodically measuring and transmitting the inner pressure of the inner space;
A QCM sensor installed in the processing space of the vacuum chamber and periodically measuring and transmitting a deposition rate, which is a rate at which the source material is deposited on the substrate; And
It is electrically connected to the pressure sensor and the QCM sensor, and collects the internal pressure and the deposition rate in real time, and calculates the internal pressure gradient and the deposition rate gradient, which are changes in the internal pressure and the deposition rate over time, respectively. and a control unit that measures and compares the change in the internal pressure gradient and the deposition rate gradient. According to claim 1,
The control unit is
While the slope of the deposition rate is within a preset range,
A monitoring system for a deposition process that determines that a problem has occurred in the deposition process when the internal pressure gradient within a preset range increases. 3. The method of claim 2,
The control unit is
When the increased internal pressure gradient returns to the internal pressure gradient of the preset range within a predetermined time, it is determined that the clogging phenomenon has occurred. 3. The method of claim 2,
The control unit is
When the increased internal pressure gradient changes to a negative (-) value within a predetermined time, it is determined that the source material is exhausted, a monitoring system for a deposition process. According to claim 1,
The pressure sensor is
a housing inserted and installed in an insertion hole penetrating the upper surface of the crucible and having a passage communicating the processing space and the inner space;
a diaphragm installed in the passage to block the passage and bent according to the pressure of the inner space;
a first electrode plate disposed on the diaphragm and spaced apart from the diaphragm by a first interval;
a first insulator installed at the first interval to support the first electrode plate, to form a connection space together with the housing and the diaphragm, and to have a through-hole communicating the connection space and the processing space;
a capacitance measuring unit capable of calculating a first capacitance between the diaphragm and the first electrode plate;
A monitoring system for a deposition process comprising a; a pressure converter capable of converting the first capacitance into a pressure. It is installed in the processing space of the vacuum chamber in which the substrate in the closed processing space is disposed, and is disposed under the substrate in the processing space, and the ejection port for vaporizing the source material filled therein and depositing the substrate onto the substrate is in the vertical direction. A data collection step in which the deposition rate, which is the internal pressure of the crucible formed through the furnace and the rate at which the source material is deposited on the substrate, is collected in real time;
A slope measuring step of measuring the internal pressure gradient and the deposition rate gradient, which are changes in the internal pressure and the deposition rate with the passage of time, respectively; And
A monitoring method for a deposition process comprising a; a slope comparison step of comparing the change in the slope of the internal pressure and the deposition rate slope. 7. The method of claim 6,
The slope comparison step is,
While the slope of the deposition rate is within a preset range,
The step of determining that a problem has occurred in the deposition process when the internal pressure gradient belonging to a preset range increases, the deposition process monitoring method. 8. The method of claim 7,
The slope comparison step is,
The step of determining that the clogging phenomenon has occurred when the increased internal pressure gradient returns to the internal pressure gradient of the preset range within a predetermined time. 8. The method of claim 7,
The slope comparison step is,
The step of determining that the source material is exhausted when the increased internal pressure gradient changes to a negative (-) value within a predetermined time, the deposition process monitoring method.

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