KR20220121423A - Plasma Processing Device - Google Patents

Abstract

Disclosed is a plasma processing device capable of protecting a lower electrode when plasma is generated, and extending the life of the lower electrode. The plasma processing device has a focus ring divided and disposed to surround side surfaces of the lower electrode, and has adjacent sides disposed at intervals not to be in contact with each other to prevent the sides from being in contact with each other even if the sides are expanded by heat, thereby preventing generation of particles and damage to the sides due to friction. In addition, corner insulating members having supports are disposed in corner areas of the lower electrode in which the sides are adjacent to each other to prevent a phenomenon in which helium gas leaks due to rising of the corner insulating members and arcing occurs due to penetration of plasma into the corner areas of the lower electrode.

Description

Plasma Processing Device

The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of protecting a lower electrode when plasma is generated and extending the life of the lower electrode.

In general, in the field of semiconductor device manufacturing or the like, a plasma processing apparatus is known that converts a processing gas into plasma to perform a predetermined processing, for example, an etching process or a film forming process, on a target substrate such as a semiconductor wafer or a glass substrate.

For example, the plasma generating apparatus may be divided into a capacitive coupled plasma (CCP) type and an inductive coupled plasma type according to a plasma-forming method.

The capacitive plasma apparatus includes, for example, a chamber, an upper electrode at least a part of which is disposed in the chamber and grounded, a gas injection unit disposed below the upper electrode in the chamber to inject a source gas, and a gas injection unit disposed opposite to the lower side of the gas injection unit to process the object It includes an electrostatic chuck supporting the , an upper power supply for applying power to the upper electrode, and a lower power supply for applying power to the lower electrode. When power is applied to the upper electrode and the lower electrode in such a capacitive plasma device, an electric field and plasma are formed between the lower electrode and the upper electrode. The plasma generated in the capacitive plasma apparatus has an advantage of high ion energy due to the electric field, but there is a problem in that the object to be treated or the thin film formed on the object to be treated is damaged by the high energy ions. And as the pattern is refined, the degree of damage caused by high-energy ions increases.

The inductive plasma apparatus includes, for example, a chamber, a gas injection unit disposed in the chamber to inject a source gas, an electrostatic chuck disposed opposite the gas injection unit in the chamber to support a processing object, and an external chamber to which source power is applied. It includes an antenna, an antenna source power supply for applying a source power to the antenna, and a bias power supply for applying a high frequency bias power to the electrostatic chuck. In such an inductive plasma device, when a bias power is applied to the electrostatic chuck and a source power is applied to the antenna, plasma is formed in the chamber. Positive ions in the generated plasma are incident or collide with the surface of the object to form a thin film on the object to be treated or to etch the thin film formed on the object to be treated or the object to be treated. Plasma formed in the inductive plasma apparatus has a high density and forms a low ion energy distribution, so there is an advantage in that there is little damage to a processing object or a thin film.

The plasma apparatus using such a plasma includes a support part on which a substrate is seated and functions as a lower electrode, and a focus ring disposed on a side surface of the support part to protect the lower electrode from plasma.

The focus ring is disposed on the side of the support part, is divided so as to be adjacent to two or more sides of the support part, and is fixed to the support part with bolts, etc. are placed

However, the support part or the focus ring is thermally expanded or contracted by the heat generated by the plasma discharge, and an abnormal discharge is generated due to a gap generated between the support part and the focus ring, or the support part is etched due to contact between the support part and the focus ring. Accordingly, there is a problem in that the life of the lower electrode is shortened. In addition, there is a problem in that the divided focus rings are etched by friction at the portions in contact with each other due to thermal expansion or contraction, so that particles are induced in the plasma equipment, or the etched focus ring is damaged.

Korean Patent Publication No. 11-2011-0077575

An object of the present invention is to provide a plasma processing apparatus capable of maintaining a gap between a lower electrode and a focus ring, and preventing friction between the focus ring due to thermal expansion or contraction, thereby extending the lifespan of the lower electrode and the focus ring is doing

In order to solve the above problems, the plasma processing apparatus of the present invention includes a chamber body, a processing chamber provided by the chamber body and in which plasma processing of an accommodated target substrate is performed, a plasma generating unit generating plasma in the processing chamber, the processing chamber and a frame disposed between the plasma generator and a lower electrode supporting the substrate to be processed in the processing chamber, and a support unit having a focus ring disposed thereon, wherein the focus ring extends around the lower electrode It includes a plurality of edges divided to wrap, wherein the plurality of edges have a gap so as not to contact each other.

The gap may have a range of 0.03 mm to 0.08 mm.

The lower electrode may have a rectangular shape, and the focus ring may be divided to be disposed on one side of the lower electrode.

All of the plurality of edges may have the same shape.

The plurality of edges may wrap around the lower electrode such that a cross-section of one side in the longitudinal direction of the side faces the other side in the longitudinal direction of the adjacent side.

The one side cross-section and the other side surface may include a step-shaped step portion to be alternately disposed with each other.

The cross-section of the step portion may have a zigzag cross-section such that the step portion faces each other in a zigzag shape.

It may further include a corner insulating member respectively disposed on the corner of the lower electrode.

The corner insulating member may include a pillar portion disposed to contact the edge portion adjacent to the edge of the lower electrode, and a support portion extending to protrude below the pillar portion and supporting the edge portion in contact with the pillar portion.

The side portion may include a first clearance groove having an elliptical shape in the longitudinal direction of the side portion so that the side portion expands or contracts in the longitudinal direction, and perpendicular to the longitudinal direction of the side portion such that the side portion expands or contracts in a direction perpendicular to the longitudinal direction. It may include a second clearance groove having an elliptical shape in one direction.

The first clearance groove and the second clearance groove may further include a fixing pin for limiting movement of the edge portion.

According to the present invention described above, the focus ring is divided and arranged to surround the side surface of the lower electrode, and adjacent edges are arranged so that they do not contact each other at a predetermined distance, so that even if the edges are expanded by heat, contact between the edges can be prevented. It is possible to prevent the generation of particles due to friction and damage to the edges.

In addition, by forming the non-contact region to have a stepped shape or a zigzag shape so that the edges are arranged to be alternated with each other, it is possible to prevent plasma from flowing through the non-contact region.

Furthermore, by arranging a corner insulating member having a support in the corner region of the lower electrode where the edges are adjacent to each other, the occurrence of helium gas leakage due to the rise of the corner insulating member and the occurrence of arcing due to plasma penetration into the corner region of the support can be prevented. can

The technical effects of the present invention are not limited to those mentioned above, and other technical effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a view showing a plasma processing apparatus of the present invention.
2 is a view showing a focus ring according to a first embodiment of the present invention.
FIG. 3 is a cross-sectional view taken along line A-A' of FIG. 2 .
FIG. 4 is a cross-sectional view taken along line B-B' of FIG. 2 .
5 is a view showing a focus ring according to a second embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along line C-C' of FIG. 5 .
7 is a view showing a focus ring according to a third embodiment of the present invention.
FIG. 8 is a cross-sectional view taken along line D-D' of FIG. 7 .

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. do it with

1 is a view showing a plasma processing apparatus of the present invention.

Referring to FIG. 1 , a chamber body 1000 of a plasma processing apparatus according to the present invention creates an environment for performing a plasma processing process on a target substrate 101 and provides a space in which plasma is generated and reacted. In this case, the chamber body 1000 may have a rectangular shape as a whole so as to be suitable for the processing target substrate 101 having a rectangular plate shape.

The chamber body 1000 may include a plasma generator 100 , a frame 200 , and a processing chamber 300 .

The chamber body 1000 is divided into a plasma generating unit 100 and a processing chamber 300 by a frame 200 , a high-frequency antenna 110 is disposed in the plasma generating unit 100 , and the processing chamber 300 is A support unit 310 is disposed.

The high-frequency antenna 110 of the plasma generating unit 100 is a means for inducing an electric field for generating plasma in the processing chamber 300 by receiving high-frequency power from the first high-frequency power source 120, and has a coil-shaped structure as a whole. , the shape, number, and arrangement of the high-frequency antenna 110 may be appropriately selected according to the process being carried out.

Meanwhile, the high frequency power supplied from the first high frequency power source 120 passes through the first matching unit 130 provided on the upper portion of the chamber body 1000 and through the power lead line 140 disposed in the plasma generating unit 100 . applied to the antenna 110 . At this time, the first matcher 130 matches the load impedance of the high frequency antenna 110 and the plasma impedance caused by the plasma generated by the high frequency antenna 110 with the internal impedance of the first high frequency power supply 120 . matching) to minimize the loss of power applied from the first high frequency power source 120 to the high frequency antenna 110 .

When high-frequency power is applied from the first high-frequency power source 120 to the high-frequency antenna 110 , an electric field induced by a magnetic field generated from the high-frequency antenna 110 reacts with the processing gas to generate plasma. Since the electric field induced by the magnetic field of the high frequency antenna 110 can reduce the electric field lost to the chamber body 1000 wall by the magnetic field, it is possible to generate high-density plasma compared to the electric field generated in the capacitive plasma processing apparatus. .

At this time, the capacitor electric field is a means for igniting the initial plasma, but it damages the dielectric window 210 disposed between the plasma and the high-frequency antenna 110 by sputtering, and reduces the uniformity of the plasma. It can have negative effects such as dropping.

In order to prevent such a negative effect, the electric storage effect on the dielectric window 210 by adjusting the distance between the high frequency antenna 110 and the dielectric window 210 or by changing the shape and structure of the high frequency antenna 110 or the dielectric window 210 . The effect of the electric field can be minimized. As such, by minimizing the effect of the capacitive electric field on the dielectric window 210 , it is possible to more effectively transfer energy from high-frequency power to plasma through inductive coupling.

In the frame 200 , an opening 201 having a size smaller than that of the dielectric window 210 may be formed at the same position and the same shape as the dielectric window 210 . The dielectric window 210 is disposed at the position of the opening 201 of the frame 200 and supported by the frame 200 , and is provided on the substantially same horizontal plane at the upper portion of the chamber body 1000 .

The shape of the dielectric window 210 may be any one of a circle, an ellipse, a triangle, and a square, and may be preferably disposed in a rectangular shape. In addition, the dielectric window 210 may have a form divided into one or more, and may have any one of four divisions, 5 divisions, 6 divisions, 8 divisions, 9 divisions, and more.

The gas supply unit 220 includes an ejection port 230 for injecting gas from the upper portion of the chamber body 1000 toward the target substrate 101 , and the ejection port 230 is formed in one or more holes formed in the frame 200 . Can be inserted and installed.

When the plasma processing apparatus is applied to the large-area chamber body 1000 , the dielectric window 210 and the frame 200 may consist of a plurality of regions, and accordingly, one or more outlets 230 may be provided.

A lower portion of the processing chamber 300 includes a support unit 310 disposed to support the substrate 101 to be processed, and the support unit 310 includes a lower electrode 320 , a base electrode 330 , an insulating member 340 and A focus ring 350 may be included.

The lower electrode 320 supports the target substrate 101 while fixing the substrate, and maintains the temperature of the substrate. The processing target substrate 101 is seated on the electrode surface 321 of the lower electrode 320 , and the peripheral portion except for the electrode surface 321 on which the processing target substrate 101 is seated is a peripheral groove such that the electrode surface 321 protrudes. 322 is formed.

In general, since the capacitive plasma processing apparatus has a relatively low plasma density, there is no problem in maintaining the temperature of the substrate even during processing of a large-area substrate. However, in a capacitive plasma processing apparatus using a relatively high process temperature, the substrate is bent by the high temperature, and in order to prevent this, an electrostatic chuck (ESC) is used to fix the entire area of the substrate. Accordingly, high voltage DC (HVDC) for generating the electrostatic chuck may be applied to the lower portion of the lower electrode 320 .

In addition, a helium hole 323 may be formed in the lower electrode 320 by using helium gas to increase heat transfer efficiency of the target substrate 101 and improve temperature distribution. The helium hole 323 may be formed to spray the helium gas toward the target substrate 101 and uniformly spray the helium gas onto the target substrate 101 in order to increase a temperature distribution.

The base electrode 330 may be disposed under the lower electrode 320 .

A coolant pattern 331 for controlling a temperature distribution of the lower electrode 320 may be formed on the base electrode 330 . The coolant pattern 331 is connected to the coolant inlet 332 and the coolant outlet 333 , and when coolant is injected through the coolant inlet 332 , the coolant moves along the coolant pattern 331 formed in the base electrode 330 . After cooling the lower electrode 320 , it is discharged through the coolant outlet 333 . Here, the coolant pattern 331 may be formed in various patterns to improve the temperature distribution of the lower electrode 320 .

In addition, one end of the lower surface of the base electrode 330 is connected to the lower surface of the base electrode 330 , and the other end is connected to the second matching unit 360 , and the second high frequency power supply 370 applies bias high frequency power to the lower electrode. A connection member 380 for transmitting to the 320 may be included.

The insulating member 340 may be formed to surround the lower and side surfaces of the lower electrode 320 and the base electrode 330 . Accordingly, the lower electrode 320 and the base electrode 330 may be protected from plasma generated in the processing chamber 300 by the insulating member 340 .

The focus ring 350 may be disposed on the support unit 310 . More specifically, the focus ring 350 may be disposed to extend from the peripheral groove 322 of the lower electrode 320 to the upper surface of the insulating member 340 disposed on the side surface of the lower electrode 320 . In addition, the focus ring 350 is disposed on the peripheral groove 322 of the lower electrode 320 , and may be disposed to surround all the side surfaces of the electrode surface 321 .

2 is a view showing a focus ring according to a first embodiment of the present invention.

FIG. 3 is a cross-sectional view taken along line A-A' of FIG. 2 .

FIG. 4 is a cross-sectional view taken along line B-B' of FIG. 2 .

2 to 4 , the focus ring 350 according to the first embodiment of the present invention is disposed to surround the side surface of the lower electrode 320 , and one focus ring ( 350) may have a divided form to correspond to each other. For example, when the lower electrode 320 has a rectangular shape, the focus ring 350 has four divided focus rings 350 such that the divided focus rings 350 are disposed one by one on four sides of the lower electrode 320 . ) can have That is, the focus ring 350 may have a shape in which first to fourth edges 351 , 352 , 353 , and 354 having the same shape are coupled to each other so as to surround the side surface of the lower electrode 320 .

For example, one longitudinal cross-section of the first side 351 may be disposed to be adjacent to the other longitudinal side of the second side 352 , and the one longitudinal cross-section of the second side 352 may be a third side It may be arranged to be adjacent to the other side of the longitudinal direction of (353). In addition, one longitudinal cross-section of the third side 353 may be disposed adjacent to the other longitudinal side of the fourth side 354 , and the one longitudinal cross-section of the fourth side 354 is the first side 351 . ) may be arranged to be adjacent to the other side in the longitudinal direction. Accordingly, the focus ring 350 may have a ring shape in which the respective edges 351 , 352 , 353 , and 354 are disposed adjacent to one side and the other side of each other.

In this case, it is preferable that the adjacent edges have a gap 301 so that they do not contact each other. If the edges are disposed in contact with each other, the lower electrode 320 or the edges thermally expand or contract due to heat generated during plasma discharge, and at this time, particles are generated by friction between the edges that are in contact with each other. The particles thus generated contaminate the inside of the chamber body, which causes defects in the substrate to be processed.

Therefore, the adjacent edges are arranged to be non-contact in consideration of thermal expansion or contraction due to heat, but the non-contact gap 301 is preferably arranged to have a range of 0.03 mm to 0.08 mm. This is, if the gap 301 is smaller than 0.03 mm, contact between the edges may occur due to the expansion of the edges and particles may be induced. This is because arcing may be generated on the surface of the lower electrode 320 due to abnormal discharge by penetrating it.

In addition, each of the edges 351 , 352 , 353 , and 354 may include a first clearance groove 302 and a second clearance groove 303 for controlling the movement direction of the edges 351 , 352 , 353 , 354 according to the expansion or contraction of the edges 351 , 352 , 353 , 354 . At this time, the first clearance groove 302 and the second clearance groove 303 may have an elliptical slot hole, and may be a groove formed in an upward direction from the lower portion of the side portions 351 , 352 , 353 , 354 .

The first clearance groove 302 may be formed so that the longitudinal direction of the long hole is in the same direction as the longitudinal direction of the sides so that the edges 351, 352, 353, 354 expand or contract in the longitudinal direction when the edges 351, 352, 353, and 354 are thermally expanded or contracted. The first clearance groove 302 may be formed on the other side of each of the edges 351 , 352 , 353 , 354 , or may be formed in plurality on the other side and the middle region.

The second clearance groove 303 is formed so that the longitudinal direction of the long hole is perpendicular to the longitudinal direction of the sides so that the edges 351, 352, 353, 354 expand or contract in the vertical direction in the longitudinal direction when the sides 351, 352, 353, 354 are thermally expanded or contracted. can be formed. The second clearance groove 303 may be formed on one side of each of the edges 351 , 352 , 353 and 354 .

As shown in FIGS. 2 and 3 , a circular fixing pin 304 fixed to the lower electrode 320 may be disposed in the first clearance groove 302 and the second clearance groove 303 . Accordingly, when the edges 351 , 352 , 353 , and 354 are expanded or contracted by heat, they may be expanded or contracted along the longitudinal direction of the long hole by the fixing pins 304 disposed in the clearance grooves 302 and 303 .

At this time, the side portions 351,352,353,354 may expand or contract in the longitudinal direction of the side portions 351,352,353,354, but may be expanded or contracted from one side to the other side mostly by the second clearance groove 303 formed in the vertical direction of the side portions 351,352,353,354. have. That is, since the edges 351, 352, 353, and 354 expand or contract in the other direction in which one surface in the longitudinal direction is opened, even if the edges 351, 352, 353, and 354 are expanded by heat, it is possible to prevent interference between the edges 351, 352, 353, and 354.

In addition, although most of the edges 351 , 352 , 353 , and 354 are expanded or contracted in the other direction of the edges 351 , 352 , 353 and 354 by the second clearance groove 303 , they may be partially expanded in one direction of the edges 351 , 352 , 353 , 354 . Therefore, when adjacent edges are disposed in contact with each other, friction may be generated by the edges partially expanded in one direction to induce particles. Accordingly, as described above, it is preferable to arrange adjacent edges so that they do not contact each other.

A corner insulating member 390 may be disposed at a corner of the lower electrode 320 . The edge insulating member 390 functions to protect the edge portion most vulnerable to plasma exposure among the upper portions of the lower electrode 320 from plasma.

For example, when the processing target substrate 101 is seated on the lower electrode 320 , the processing target substrate 101 is distorted due to the micro-sliding of the processing target substrate 101 , so that the entire upper portion of the lower electrode 320 cannot be covered. This can happen. When the upper portion of the lower electrode 320 is exposed due to a minute distortion of the substrate 101 , the most vulnerable portion from plasma may be a corner region of the upper portion of the lower electrode 320 .

The edge insulating member 390 may prevent the lower electrode 320 from being damaged by arcing by exposing the upper edge of the lower electrode 320 to plasma due to the minute distortion of the substrate 101 to be processed.

Also, the edge insulating member 390 may include a pillar portion 391 and a support portion 392 .

The pillar portion 391 may have a triangular or quadrangular cross-section. Preferably, it may have a triangular shape. In this case, the pillar portions 391 are disposed at the corners of the lower electrode 320 , respectively, and may be disposed so as to be in contact with adjacent edges. For example, in the pillar portion 391 having a triangular cross-section, one side of the triangular pillar may be disposed to contact the edge of the lower electrode 320 , and the two sides may be disposed to contact adjacent edges, respectively. That is, by forming the edge insulating member 390 to have a pillar shape, it is possible to prevent plasma penetration into the gap 301 due to an assembling error when assembling the non-contact edges.

The support part 392 may be disposed under the column part 391 to extend from the column part 391 . That is, the edge insulating member 390 may have a shape in which the lower edge protrudes by the support part 392 . Accordingly, the two sides in contact with the pillar portion 391 may be disposed to be seated on the upper surface of the support portion 392 , as shown in FIG. 4 . That is, the edge insulating member 390 may be fixed by being seated on the support part 392 by two contacting edges.

For example, when the edge insulating member 390 is formed only with the pillar portion 391, a small, light edge insulating member 390 during a pumping or purge operation inside the chamber for forming a process environment inside the chamber. ) can be raised. In this case, the edge of the processing target substrate 101 may also be raised by the elevation of the edge insulating member 390 . Accordingly, a leak of the helium gas injected to cool the target substrate 101 into the space formed by the elevation of the edge insulating member 390 may be generated, and the exposed edge region of the lower electrode 320 may be generated. As the plasma penetrates, arcing may occur.

Accordingly, the corner insulating member 390 of the present invention forms a support portion 392 under the pillar portion 391 so that the corner insulating member 390 is fixed by the edges 351, 352, 353, 354, so that the corner insulating member 390 is formed. rise can be prevented.

As described above, the focus ring 350 of the plasma processing apparatus according to the present invention is divided and disposed so as to surround the side surface of the lower electrode 320, and adjacent edges are disposed so that they are not in contact with each other at a predetermined distance, so that the edges 351, 352, 353, and 354 are disposed. Even if it expands by heating, it is possible to prevent contact between the edges 351 , 352 , 353 and 354 , thereby preventing particle generation due to friction and damage to the edges 351 , 352 , 353 and 354 . In addition, by arranging the corner insulating member 390 having the support portion 392 in the corner region of the lower electrode 320 where the edges 351 , 352 , 353 , and 354 are adjacent to each other, a helium gas leak occurs due to the rise of the corner insulating member 390 and the lower electrode (320) It is possible to prevent the occurrence of arcing due to plasma penetration into the edge region.

5 is a view showing a focus ring according to a second embodiment of the present invention.

FIG. 6 is a cross-sectional view taken along line C-C' of FIG. 5 .

5 and 6 , the focus ring 350 according to the second embodiment of the present invention is disposed to surround the side surface of the lower electrode 320 in the same manner as in the first embodiment. It may have divided edges 351 , 352 , 353 , and 354 so that one focus ring 350 is disposed to correspond to one side.

However, one side and the other side of the side adjacent to each other may include a step portion 305 so as to be alternately disposed in a step shape. At this time, it is preferable to arrange the sides arranged to be alternated with each other so that they do not contact each other as in the first embodiment.

For example, one longitudinal end surface of the first side 351 and the other longitudinal side of the second side 352 , one longitudinal end surface of the second side 352 and the other longitudinal side of the third side 353 . The side surface, one longitudinal end surface of the third side 353, the other longitudinal side surface of the fourth side 354, one longitudinal end surface of the fourth side 354, and the other longitudinal side surface of the first side 351 are Step portions 305 are formed so as to be alternately disposed, respectively, and may be disposed so as to be non-contact with each other.

This is to prevent the lower electrode 320 from being exposed to plasma due to the gap 301 allowing the edges 351 , 352 , 353 , and 354 to not contact each other when the focus ring 350 is viewed from the top. That is, by forming portions in which the edges 351 , 352 , 353 , and 354 do not contact each other in a step shape, it is possible to prevent the plasma from flowing from the top to the bottom of the gap 301 .

7 is a view showing a focus ring according to a third embodiment of the present invention.

Fig. 8 is a cross-sectional view taken along line D-D' of Fig. 7;

7 and 8 , the focus ring 350 according to the third exemplary embodiment of the present invention is a step so that one side and the other side of the adjacent side are alternately arranged in a step shape as in the second exemplary embodiment. Including the portion 305, the cross-sections of the step portion 305 may have a zigzag shape 306 with each other so that the cross-sections of the step portion 305 face each other in a zigzag shape. That is, as shown in FIG. 7 , when the adjacent edges are viewed from the top, the cross-section of the step portion 305 may have a zigzag shape 306 . In this case, it is preferable to arrange the cross-sections of the zigzag shape 306 in which the edges 351 , 352 , 353 , and 354 face each other to be non-contact.

For example, one longitudinal end surface of the first side 351 and the other longitudinal side of the second side 352 , one longitudinal end surface of the second side 352 and the other longitudinal side of the third side 353 . The side surface, one longitudinal end surface of the third side 353, the other longitudinal side surface of the fourth side 354, one longitudinal end surface of the fourth side 354, and the other longitudinal side surface of the first side 351 are Step portions 305 are formed so as to be alternately disposed, respectively, and cross-sections facing the step portions 305 may be disposed to be non-contacting in a zigzag shape 306 .

This is to minimize exposure of the side surface of the lower electrode 320 to plasma by the gap 301 of the edges 351 , 352 , 353 and 354 when the step 305 of the focus ring 350 is viewed from the side.

That is, the portions where the edges 351 , 352 , 353 , and 354 do not contact each other are formed in a step shape, but the cross-section is formed in a zigzag shape to minimize the inflow of plasma in the lateral direction of the focus ring 350 .

As described above, in the plasma processing apparatus according to the present invention, the focus ring 350 is divided so as to surround the side surface of the lower electrode 320 , and adjacent edges are disposed so that they are not in contact with each other at a predetermined distance, so that the edges are heated by heat. Even if it expands, it is possible to prevent the edges from coming into contact with each other, thereby preventing the generation of particles due to friction and damage to the edges. In addition, by forming the non-contact region to have a stepped shape or a zigzag shape so that the edges are arranged to be alternated with each other, it is possible to prevent plasma from flowing through the non-contact region.

Furthermore, by arranging the corner insulating member 390 having the support portion 392 in the corner region of the lower electrode 320 whose edges are adjacent to each other, a helium gas leak is generated and the lower electrode 320 due to the rise of the corner insulating member 390 . ) It is possible to prevent the occurrence of arcing due to plasma penetration into the edge area.

On the other hand, the embodiments of the present invention disclosed in the present specification and drawings are merely presented as specific examples to aid understanding, and are not intended to limit the scope of the present invention. It will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications based on the technical spirit of the present invention can be implemented in addition to the embodiments disclosed herein.

1000: chamber body 100: plasma generating unit
110: high frequency antenna 200: frame
210: dielectric window 220: gas supply unit
230: outlet 300: treatment room
301: gap 302: first clearance groove
303: second clearance groove 304: fixing pin
305: step 306: zigzag shape
310: support part 320: lower electrode
330: base electrode 340: insulating member
350: focus ring 351,352,353,354: edge
352,452: edge 353,455: step
390: corner insulating member 391: pillar part
392: support

Claims (11)

chamber body;
a processing chamber provided by the chamber body and in which plasma processing of the received target substrate is performed;
a plasma generator generating plasma in the processing chamber;
a frame disposed between the processing chamber and the plasma generator; and
a lower electrode supporting the target substrate in the processing chamber and a support unit having a focus ring disposed thereon;
The focus ring includes a plurality of edges divided to surround a circumference of the lower electrode, wherein the plurality of edges have a gap so that they do not contact each other. According to claim 1,
The gap is a plasma processing apparatus having a range of 0.03mm to 0.08mm. According to claim 1,
The lower electrode has a rectangular shape, and the focus ring is divided so as to be disposed one at a time on one side of the lower electrode. According to claim 1,
The plasma processing apparatus of claim 1, wherein all of the plurality of edges have the same shape. According to claim 3, wherein the plurality of edges,
The plasma processing apparatus of claim 1 , wherein a cross-section of one side of the side in the longitudinal direction surrounds the periphery of the lower electrode to face the other side of the adjacent side in the longitudinal direction. 6. The method of claim 5,
and a step portion having a step shape such that the one end surface and the other side surface are alternately disposed. 7. The method of claim 6,
The cross-section of the step portion has a cross-section of the step portion having a zigzag shape so that the step portion faces each other in a zigzag shape. According to claim 1,
The plasma processing apparatus further comprising a corner insulating member disposed at the corner of the lower electrode, respectively. The method of claim 8, wherein the edge insulating member,
a pillar portion disposed in contact with the adjacent edge portion at the lower electrode edge; and
and a support part extending under the pillar part to protrude and supporting the edge part in contact with the pillar part. According to claim 1, wherein the edge,
a first clearance groove having an elliptical shape in the longitudinal direction of the side so that the side expands or contracts in the longitudinal direction; and
and a second clearance groove having an elliptical shape in a direction perpendicular to the longitudinal direction of the edge so that the edge expands or contracts in a direction perpendicular to the longitudinal direction. 11. The method of claim 10,
The plasma processing apparatus further comprising a fixing pin restricting movement of the edge portion in the first clearance groove and the second clearance groove.

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