KR20220105256A - Light sensor and photoelectric device utilizing heterojunction of single-walled carbon nanotube and silicon - Google Patents

Abstract

A light sensor is disclosed. The light sensor includes: a single-walled carbon nanotube; a Si surface forming a heterojunction with the first region of the single-walled carbon nanotube; a first electrode provided on the Si surface; an insulator surface on which a second region of single-walled carbon nanotubes is formed; and a second electrode connected to the single-walled carbon nanotubes on the surface of the insulator. The single-walled carbon nanotube outputs a current according to input light based on a reverse voltage between the first electrode and the second electrode.

Description

Optical sensor and photoelectric device using single-walled carbon nanotube and silicon heterojunction { LIGHT SENSOR AND PHOTOELECTRIC DEVICE UTILIZING HETEROJUNCTION OF SINGLE-WALLED CARBON NANOTUBE AND SILICON}

The present disclosure relates to an optical sensor, and more particularly, to an optical sensor using a heterojunction of single-walled carbon nanotubes and silicon.

Among conventional photodetectors, a photodetector using a semiconductor heterojunction is widely used because of its wide spectrum response, excellent linearity, high quantum efficiency and operating range. Semiconductor materials with various functional configurations mainly measure and detect broad-spectrum electromagnetic waves. For example, GaAs (bandgap Eg=1.43 eV), GaN (Eg=3.4 eV), AlGaN (Eg=3.4-6.1 eV), SiC (Eg=2.36-3.05 eV), Si (Eg=1.12 eV), etc. is a well-known UV detector often used in photoconductive or photovoltaic applications. Most of these materials work as p-n, p-i-n, or Schottky photodiodes. In the reverse voltage, the reverse current becomes saturated and increases linearly with the incident photon flux without any change according to the voltage change. The bonding condition of this mode responds linearly to the input optical power and is suitable as an optical measuring instrument.

An optoelectronic photo-switch is a major element of a digital optoelectronic circuit that requires a high ON/OFF ratio even with very weak light input power. Devices that can increase current by tens to hundreds of times (potentially abrupt non-linear current response) even with weak light input power (high ON/OFF ratio) are well suited for optical switches. Existing photodiodes show low ON/OFF ratio, which is an important evaluation factor of optical switches, due to their linear response to light and saturation current in reverse voltage. As a result, the use of photodiodes in optoelectronic integrated circuits does not satisfy the low power/high performance requirements. Avalanche photodiodes can overcome this limitation by operating near the reverse breakdown voltage, but the breakdown voltages are usually very high, ranging from tens to hundreds of volts, and fast-photoelectrons due to high noise and unstable recovery currents. Not suitable for switches. From this point of view, if a device capable of obtaining a low dark current and a high reverse photocurrent can be developed, a very effective optical switch can be manufactured.

Graphene-based optical switching devices are attracting much attention due to their ultra-fast and broadband response. Recently, an effective gain mechanism (including R(λ)>107A/W) in graphene/quantum dot hybrid devices has been reported. However, despite the ability to detect a very weak signal, the responsiveness is low, and the characteristic of responding to light becomes insensitive. Inefficient and impractical as photoswitches (ON/OFF ratio << 1) due to very large dark currents. In addition, most mechanically exfoliated graphene was used, which has high electron mobility but is not suitable for devices with relatively large scale. For realistic applications, it is desirable to use an extensible architecture that does not require complex structures. However, to date, no technology has been developed to fabricate high-performance sensors (various wavelength ranges) using simple, scalable, and potentially inexpensive techniques.

The present disclosure provides a new type of photocurrent detection sensor (optical sensor) generated from a heterojunction between a single walled carbon nanotube (SWNT) and a semiconductor silicon (Si).

In addition, the present disclosure provides an electronic device using the above-described optical sensor.

Objects of the present disclosure are not limited to the above-mentioned purposes, and other objects and advantages of the present disclosure that are not mentioned may be understood by the following description, and will be more clearly understood by examples of the present disclosure. Moreover, it will be readily apparent that the objects and advantages of the present disclosure may be realized by the means and combinations thereof indicated in the claims.

The optical sensor according to an embodiment of the present disclosure includes a single-walled carbon nanotube, a Si surface forming a heterogeneous junction with a first region of the single-walled carbon nanotube, a first electrode provided on the Si surface, and the single-walled carbon nanotube. and an insulator surface on which the second region of the walled carbon nanotubes is formed, and a second electrode connected to the single walled carbon nanotubes on the insulator surface. The single-walled carbon nanotube outputs a current according to the input light based on the reverse voltage between the first electrode and the second electrode.

The Si surface may include P-type doped Si.

And, the electronic device according to an embodiment of the present disclosure includes the above-described optical sensor, a communication unit for performing communication with a plurality of Internet of Things (IoT) devices, and at least one processor. The processor may control the power of at least one IoT device among the plurality of IoT devices through the communication unit based on ambient brightness sensed through the optical sensor.

Specifically, when the ambient brightness sensed through the optical sensor falls within a first range, the processor controls the power of a first IoT device among the plurality of IoT devices to be turned on, and is detected through the optical sensor. When the ambient brightness falls within the second range, power of a second IoT device among the plurality of IoT devices may be controlled to be turned on.

In this case, when the power of the first IoT device is turned on according to a user input in a state where the ambient brightness detected through the optical sensor corresponds to the second range, the processor is configured to operate at least one lighting device. can provide a guide for

Alternatively, the processor provides the ambient brightness of the first range when the power of the first IoT device is turned on according to a user input in a state where the ambient brightness detected through the optical sensor corresponds to the second range. At least one lighting device may be controlled to do so.

Meanwhile, the processor may identify the ambient brightness sensed through the light sensor in units of seconds. Here, when the identified deviation of ambient brightness is equal to or greater than a threshold, the processor may control a third IoT device among the plurality of IoT devices to perform at least one function.

In this case, the processor may control the third IoT device to perform the function according to a cycle set according to the deviation.

Meanwhile, the processor identifies the ambient brightness sensed through the optical sensor in real time, and inputs pattern information about the identified ambient brightness into at least one artificial intelligence model to use the space in which the electronic device is located. may be determined, a lighting environment suitable for the determined use may be identified, and at least one lighting device existing in the space may be controlled according to the identified lighting environment.

In this case, the artificial intelligence model may be a model trained to select at least one use matching the input pattern information among a plurality of uses when pattern information of ambient brightness is input.

The optical sensor according to the present disclosure exhibits a very high light ON/OFF ratio and responsiveness at a low reverse voltage, and has an effect of high responsiveness.

The optical sensor according to the present disclosure can be used to develop various optoelectronic devices in combination with template induction assembly technology, and is low-cost, low-power, and high-sensitivity capable of detecting changes in input voltage and input power according to various wavelengths of light Optoelectronic devices can be constructed.

1 is a view for explaining the structure of an optical sensor according to an embodiment of the present disclosure;
2 is a view for comparing the structures of the optical sensor and the conventional optical sensor according to an embodiment of the present disclosure;
3 is a graph for comparing characteristics of an optical sensor according to an embodiment of the present disclosure and a conventional optical sensor;
4 is a graph for explaining various characteristics of an optical sensor according to an embodiment of the present disclosure;
5 is a graph for explaining ON/OFF characteristics of an optical sensor according to an embodiment of the present disclosure;
6 is a block diagram illustrating a configuration of an electronic device according to an embodiment of the present disclosure;
7 is a block diagram illustrating an operation of an electronic device for controlling a plurality of IoT devices according to an embodiment of the present disclosure;
8 is a flowchart illustrating an operation of an electronic device according to an embodiment of the present disclosure.

Prior to describing the present disclosure in detail, a description will be given of the description of the present specification and drawings.

First, terms used in the present specification and claims have been selected in consideration of functions in various embodiments of the present disclosure. However, these terms may vary depending on the intention or legal or technical interpretation of a person skilled in the art, and the emergence of new technology. Also, some terms are arbitrarily selected by the applicant. These terms may be interpreted in the meaning defined in the present specification, and if there is no specific term definition, it may be interpreted based on the general content of the present specification and common technical knowledge in the art.

Also, the same reference numerals or reference numerals in each drawing attached to this specification indicate parts or components that perform substantially the same functions. For convenience of description and understanding, the same reference numerals or reference numerals are used in different embodiments. That is, even though all components having the same reference number are illustrated in a plurality of drawings, the plurality of drawings do not mean one embodiment.

In addition, in this specification and claims, terms including an ordinal number, such as "first" and "second", may be used to distinguish between elements. This ordinal number is used to distinguish the same or similar elements from each other, and the meaning of the term should not be construed as limited due to the use of the ordinal number. For example, the components combined with such an ordinal number should not be limited in the order of use or arrangement by the number. If necessary, each ordinal number may be used interchangeably.

In this specification, the singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as "comprises" or "consisting of" are intended to designate that the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification exist, and are intended to indicate that one or more other It is to be understood that this does not preclude the possibility of addition or presence of features or numbers, steps, operations, components, parts, or combinations thereof.

In an embodiment of the present disclosure, terms such as “module”, “unit”, “part”, etc. are terms for designating a component that performs at least one function or operation, and such component is hardware or software. It may be implemented or implemented as a combination of hardware and software. In addition, a plurality of "modules", "units", "parts", etc. are integrated into at least one module or chip, except when each needs to be implemented as individual specific hardware, and thus at least one processor. can be implemented as

In an embodiment of the present disclosure, spatially relative terms "below", "beneath", "lower", "above", "upper", etc. are shown in the drawings. As described above, it can be used to easily describe the correlation between one component and other components. A spatially relative term should be understood as a term that includes different directions of components during use or operation in addition to the directions shown in the drawings. For example, when a component shown in the drawing is turned over, a component described as “beneath” or “beneath” of another component may be placed “above” of the other component. can Accordingly, the exemplary term “below” may include both directions below and above. Components may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

In addition, in an embodiment of the present disclosure, when a part is connected to another part, this includes not only direct connection but also indirect connection through another medium. In addition, the meaning that a certain part includes a certain component means that other components may be further included without excluding other components unless otherwise stated.

1 is a view for explaining the structure of an optical sensor according to an embodiment of the present disclosure.

Referring to FIG. 1 , the optical sensor includes a single-walled carbon nanotube (10, hereinafter SWNT), a Si surface 20 that forms a heterogeneous junction with a partial region of the SWNT, an insulator surface 30, and the like.

SWNT(10) is a one-dimensionally rolled material of graphene, and as a one-dimensional closed material with the molecular asymmetry (chirality) of SWNTs, conductor properties (Fermi level energy = 0 eV) and semiconductor properties (various energy band gaps) has).

In addition, the light absorptivity of SWNTs is closely related to the electron density of states (DoS) of SWNTs, which is characterized by the amount of van Hove singularities distributed symmetrically around each Fermi level energy. There is this.

The diameter of the SWNT 10 is usually much smaller than the depletion width of a typical semiconductor junction, and when in direct contact with silicon, the free electron depletion layer is almost eliminated. Therefore, the generation of photoelectrons can occur with little heat loss or recombination loss in the SWNT-Si heterojunction.

SWNTs 10 may be formed over Si surface 20 and insulator surface 30 in the form of a belt. The SWNT 10 may be implemented as a belt having a width ranging from 0.1 mm to about 500 nm, but is not limited thereto.

The Si surface 20 may include, for example, P-type doped Si, and the doping concentration may be about 10 ¹⁴ to 10 ¹⁷ atoms/cm ³ , but is not limited thereto.

The insulator surface 30 may be formed of, for example, SiO ₂ , but may also be formed of various insulators.

For example, oxidized SiO ₂ is formed on the surface of the P-type doped Si substrate to form an insulator surface, while at least a portion of the insulator surface is etched to form the above-described Si surface 20 and the insulator. Each of the surfaces 30 may be formed, but is not limited thereto.

Each surface 20 , 30 may include one or more electrodes. Referring to FIG. 1 , the Si surface 20 may include the electrode 21 , and the insulator surface 30 may include the electrode 31 .

The SWNT 10 may be connected to the electrode 31 provided on the insulator surface 30 .

In a state where a reverse voltage (reverse vias) is applied between the electrode 21 of the Si surface 20 and the electrode of the insulator surface 30 , when light of a certain wavelength is input to the SWNT 10 , the SWNT 10 is Since current can be output, specific experimental data will be described later with reference to FIGS. 2 to 5 .

Meanwhile, although only one SWNT 10 is illustrated in FIG. 1 , the optical sensor may include a plurality of SWNTs. In this case, a plurality of SWNTs may be connected in parallel to one electrode 31 at regular intervals, or a plurality of SWNTs may be respectively connected to different electrodes on the insulator surface 30 .

2 is a diagram for comparing structures of an optical sensor according to an embodiment of the present disclosure and a conventional optical sensor.

In Fig. 2, (a) and (b) form a heterojunction with a SWNT belt on the surface of a wafer chip of p-type Si, and an electrode (-) of Ti (5 nm)/Au (150 nm) is formed in a region covered with SiO ₂ An optical image of the formed device and an image of an electron microscope (SEM) are shown. The electrode (+) in the lower right corner forms a Schottky junction between the Si surface and the electrode of Ti (5 nm)/Au (150 nm) and shows the characteristics of an ohmic contact.

In FIG. 2, (c) and (d) are fabricated under the same conditions as the above device and consist of Au belts instead of SWNT belts. The purpose of the fabrication of this device was to compare the markedly different electrical/optical properties of the typical Schottky junction seen in the semiconductor-metal junction (Au-Si) and the SWNT-Si heterojunction device.

Hereinafter, the effect of the heterogeneous bonding of SWNT-Si will be described with reference to FIGS. 3 to 5 .

3 is a graph for comparing characteristics of an optical sensor according to an embodiment of the present disclosure and a conventional optical sensor.

Specifically, (a) of FIG. 3 shows the current-voltage characteristics according to the intensity of input light in the heterogeneous junction structure of SWNT and Si, and (b) of FIG. 3 shows the intensity of input light in a typical Schottky junction. The current-voltage characteristics according to In FIG. 3 , the input light intensity is 117 μW when the maximum is 100%.

In (a) of FIG. 3 , the current in the absence of light shows a general rectification curve shape showing a very low saturation current. However, when the SWNT-Si heterojunction sensor part is exposed to 100% intensity of strong light, a rapidly increasing reverse bias current is generated. The nonlinear reverse bias photocurrent increases rapidly with the reverse voltage, and under the reverse bias value of -3V and the input light intensity of 117μW, it increases by more than 10,000 times compared to the photocurrent of 0V.

The table in (a) of FIG. 3 shows the Photo-ON/OFF ratio for the reverse voltage under the light of 100% intensity.

Conversely, Fig. 3(b) shows typical Schottky junction characteristics between a semiconductor and a metal, and the Photo-ON/OFF ratio does not increase in reverse bias and shows saturation under the light of 100% intensity. measured up to 1000 times. This is 10 times smaller than the SWNT-Si device, and it does not increase rapidly in proportion to the reverse voltage and shows a saturated curve.

4 is a graph for explaining various characteristics of an optical sensor according to an embodiment of the present disclosure.

Specifically, for the SWNT-Si heterojunction, (a) of FIG. 4 is a current-voltage characteristic according to various input wavelengths and input power, (b) is an ON/OFF ratio for various input conditions, (c) shows the responsiveness (responsivity).

In (a) of FIG. 4 , the input wavelength bands are 457 nm, 488 nm, 633 nm, 780 nm, broadband optical light, solar light, and the like. When the input power of 488nm wavelength is 524μW and 850μW, the photocurrent rapidly increases up to -2V and then becomes saturated. On the other hand, except for broadband optical light and solar light, most show a low increase in photocurrent.

FIG. 4(b) shows the ON/OFF (photocurrent/dark current) ratio for various measured wavelengths, and FIG. 4(c) shows the response (output current/incident power). As can be seen from the graph, the sensor's response to broadband optical light reached about 1 A/W when the reverse bias was increased to -3V. In comparison, commercial Si-based photosensors show a response value of 5 - 50 mA/W. In addition to a photodetector, this sensor can act as a photoswitch due to its high ON/OFF ratio. This means that an optoelectronic switch with a cross-sectional area of 1 μm x 1 μm requires only 0.25 nW of low power to turn on by 4 digits (10,000 times).

5 is a graph for explaining ON/OFF characteristics of an optical sensor according to an embodiment of the present disclosure.

Specifically, FIG. 5 corresponds to the current-time characteristics of the sensor according to the SWNT-Si heterojunction. The external input voltage is 0V, and the input power of external light (broadband optical light) is 20%~100%.

In FIG. 5 , the input optical signal capable of controlling power was initially turned on at the 100% level, maintained for about 10 seconds, increased and then turned on again at the 100% level, and then decreased by about 20% for a certain period of time until the last 0% was measured. As can be seen in FIG. 5 , the optical sensor was very sensitive to the optical signal and responded quickly.

As such, the optical signal characteristics of the SWNT-Si heterojunction show a nonlinear reverse bias photocurrent that sharply increases as the incident output of light increases and the reverse bias increases. This characteristic shows high responsiveness (~ 1A/W) and ON/OFF ratio (~ 104), and can be easily and simply manufactured by a typical semiconductor process.

In particular, the SWNT-Si heterojunction optical sensor shows a very high ON/OFF ratio at a low reverse bias voltage and shows a photoresponse in various wavelength bands. The application of this sensor technology allows the development of various multifunctional optoelectronic switches, phototransistors, optoelectronic logic gates and complex optoelectronic digital circuits using photodetection devices. It can also develop low-cost, low-power, high-sensitivity scalable optoelectronic devices for a variety of analog, digital, sensing, imaging and other suitable applications.

As an example, an AND gate based on an optical signal input and a voltage input to one SWNT (eg, SWNT 10 in FIG. 1 ) may be implemented. That is, the current can be output only when both the optical signal and the reverse voltage are input.

As another example, as a result of using an optical signal input to each of a plurality of SWNTs connected in parallel to the same electrode, a logic element such as an OR gate and an ADDER may also be implemented.

On the other hand, as described above, the SWNT-Si heterojunction-based optical sensor has the characteristic that it can respond delicately according to the input power of light. It can be used for devices, etc.

In relation to this, FIG. 6 is a block diagram illustrating a configuration of an electronic device according to an embodiment of the present disclosure.

Referring to FIG. 6 , the electronic device 100 includes at least one optical sensor 110 for measuring ambient brightness, a communication unit 120 for communicating with various external devices (ex. IoT device), and a processor ( 130) and the like.

The electronic device 100 may be implemented as at least one control device, a relay device, a sensing device, etc. for controlling various IoT devices in an Internet of Things (IoT) system.

The IoT system may be an IoT system in various spaces or places, such as an IoT environment in a house, an IoT environment in an office, an IoT environment in a performance hall, an IoT environment such as a smart farm or a smart factory.

The optical sensor 110 may be implemented as a heterogeneous junction of SWNT-Si as shown in FIG. 1 described above, and may have a high optical response.

The optical sensor 110 may be implemented to measure ambient brightness using voltage-current characteristics of SWNTs according to wavelengths in the visible light region. To this end, the optical sensor 110 may include at least one control circuit or control element in addition to the SWNT-Si heterojunction of FIG. 1 .

The communication unit 120 may be connected to at least one external device through one or more networks to perform communication. Specifically, the communication unit 120 may communicate with a plurality of IoT devices included in the IoT system.

The network may be a personal area network (PAN), a local area network (LAN), a wide area network (WAN), etc. depending on the area or size, and depending on the openness of the network, an intranet, It may be an extranet or the Internet.

The communication unit 120 is a long-term evolution (LTE), LTE Advance (LTE-A), 5th generation (5G) mobile communication, code division multiple access (CDMA), wideband CDMA (WCDMA), universal mobile telecommunications system (UMTS) , WiBro (Wireless Broadband), GSM (Global System for Mobile Communications), DMA (Time Division Multiple Access), WiFi (Wi-Fi), WiFi Direct, Bluetooth, NFC (near field communication), Zigbee, etc. It can be connected to an external device through In addition, the communication unit 120 may be connected to an external device through a wired communication method such as Ethernet, an optical network, a Universal Serial Bus (USB), or a ThunderBolt.

The processor 130 is a configuration for overall controlling the electronic device 100 . Specifically, the processor 130 may perform operations according to various embodiments of the present disclosure by executing at least one instruction stored in the memory of the electronic device 100 .

The processor 130 may include one or more processors. In this case, the one or more processors may include a general-purpose processor such as a CPU, an AP, a digital signal processor (DSP), etc., a graphics-only processor such as a GPU, a VPU (Vision Processing Unit), or the like, or an artificial intelligence-only processor such as an NPU. The AI-only processor may be designed with a hardware structure specialized for training or use of a specific AI model.

According to an embodiment, the processor 130 may control the power of at least one IoT device among the plurality of IoT devices through the communication unit 120 based on the ambient brightness sensed through the optical sensor 110 .

In relation to this, FIG. 7 is a block diagram illustrating an operation of an electronic device for controlling a plurality of IoT devices according to an embodiment of the present disclosure.

Referring to FIG. 7 , the processor 130 may communicate with a plurality of IoT devices 200-1, 2, 3, ..., and control power and/or at least one function of each of the plurality of IoT devices. You may.

The plurality of IoT devices 200 - 1 , 2 , and 3 may include, for example, various devices such as a desktop PC, a TV, an air purifier, a robot cleaner, and a lighting device.

Each of the plurality of IoT devices 200 - 1 , 2 , 3 may be matched to at least one ambient brightness. Here, the unit of ambient brightness may be lux (lm/m ²⁾ , W/m ² , and the like.

As an example, the IoT device 200 - 1 may match ambient brightness in a first range, and other IoT devices 200 - 2 and 3 may match ambient brightness in a second range different from the first range. A range of ambient brightness values matched to each IoT device or each IoT device matching a range of ambient brightness values is set according to a user input received through the electronic device 100 or a user terminal connected to the electronic device 100 can be

In this case, the processor 130 controls the power of the IoT device 200 - 1 to be ON when the ambient brightness sensed through the light sensor 110 falls within the first range, and operates the light sensor 110 . When the ambient brightness sensed through the second range corresponds to the second range, power of the IoT devices 200 - 2 and 3 may be controlled to be turned on.

In relation to this, FIG. 8 is a flowchart illustrating an operation of an electronic device according to an embodiment of the present disclosure.

Referring to FIG. 8 , the processor 130 identifies the ambient brightness detected through the optical sensor 110 ( S810 ). An IoT device matching the ambient brightness may be selected (S820).

As a specific example, when the ambient brightness is 300 lux or more, the processor 130 may select an IoT device such as a desktop PC or a TV matching the corresponding brightness range.

As another example, when the ambient brightness is 50 lux or less, the processor 130 may select a beam projector matching the corresponding brightness range.

However, the above-described ambient brightness value is only an example, and the technical concept according to the present disclosure is not limited to the above-described value.

Then, the processor 130 may control the corresponding IoT device to turn on the power of the selected IoT device (S830).

As a result, IoT devices suitable for ambient light can be turned on automatically. For example, a user entering a room may simply turn on a lighting device (e.g. a fluorescent lamp), and the desktop PC and/or TV will automatically turn on, and the beam projector (which has been powered on) may automatically turn off. .

On the other hand, when the power of the IoT device is turned on in a state in which the ambient brightness detected through the optical sensor 110 corresponds to a brightness range that does not match the IoT device, the processor 130 is suitable for use of the IoT device To do so, a guide for the manipulation of the at least one lighting device may be provided or the at least one lighting device may be automatically controlled.

In one embodiment, when the desktop PC (and monitor) is powered on according to a user input in a state where the ambient brightness is 50 lux or less, the processor 130 provides a UI (User Interface) recommending to set the ambient brightness to be brighter. can

At this time, the processor 130 through the display or speaker provided in the electronic device 100 "the environment is too dark to see the computer screen. Turn on the lights and keep your surroundings brighter to protect your eyes.”

Alternatively, the processor 130 may provide the above-described guide through at least one IoT device (eg, a desktop PC, a speaker device) or a user terminal (eg, a smart phone) connected to the electronic device 100 .

In another embodiment, when the power of the desktop PC (and the monitor) is turned on according to a user input in a state where the ambient brightness is 50 lux or less, the processor 130 is configured to turn on at least one lighting device in the same space as the desktop PC. It can also be automatically controlled to make the ambient light brighter. Specifically, the processor 130 may control the illumination intensity of the lighting device so that the ambient brightness measured through the optical sensor 110 is 300 lux or more.

Meanwhile, the processor 130 may identify the ambient brightness detected through the optical sensor 110 in units of seconds, and control the power and/or function of at least one IoT device according to the deviation of the identified ambient brightness. .

Here, the deviation of the ambient brightness may correspond to a deviation (with respect to the average) of the ambient brightness during a preset time period (eg, 24 hours), but is not limited thereto.

For example, when the identified ambient brightness deviation is 3 lux or more, the processor 130 may control the robot cleaner (IoT device) to perform cleaning in a corresponding space (where the electronic device 100 is located). Also, the processor 130 may control the air purifier located in the corresponding space to perform an air cleaning operation.

The greater the deviation in ambient brightness, the more frequent the lighting device ON/OFF frequency in the space or the appearance/movement of objects (eg, people/animals) in the space, which means that the space is frequently used. That is, according to the above-described embodiment, air cleaning/cleaning may be performed according to the frequency of use of the corresponding space.

In addition, the processor 130 may control the IoT device (eg, a robot cleaner, an air purifier) to perform a function according to a cycle set according to the deviation. Specifically, the greater the deviation of ambient brightness, the greater the frequency at which the IoT device performs functions (eg, cleaning, air cleaning, etc.).

As an example, a period (T) during which an IoT device such as a robot cleaner or an air purifier performs cleaning for a corresponding space may be set as in Equation 1 below (D (duration) = target period (ex. one day: 24) time), x: ambient brightness variable (every second), E(x): average of ambient brightness during the target period, α: preset constant, β: constant set according to the performance of the IoT device).

That is, the smaller the deviation of ambient brightness and the better the performance (eg, suction power, suction range, etc.) of the IoT device, the longer the operating cycle of the IoT device.

As a similar example, when the electronic device 100 is located in the bathroom, the processor 130 may automatically control the operation cycle of the ventilation device in the bathroom according to the deviation of the brightness in the bathroom. Specifically, the processor 130 may automatically control the ventilation device by shortening the operation period of the ventilation device in the bathroom as the variation in brightness in the bathroom increases.

Meanwhile, according to an embodiment, the processor 130 may identify the ambient brightness sensed through the optical sensor 110 in real time, and obtain pattern information about the identified ambient brightness.

Specifically, the processor 130 may identify the change frequency, deviation, average brightness, etc. of ambient brightness for each specific day or time.

Then, the processor 130 may input the obtained pattern information into at least one artificial intelligence model to determine the use of the space in which the electronic device 100 is located.

If the artificial intelligence model is included in the external server connected to the electronic device 100 , the processor 130 may transmit the pattern information to the corresponding server and then receive information on the use of the space from the server.

The artificial intelligence model may be a deep learning-based model that includes one or more layers and is trained according to a change in a weight value between nodes included in different layers.

The artificial intelligence model may be trained to select at least one use matching the input pattern information when pattern information of a change in ambient brightness is input.

Specifically, the artificial intelligence model may be trained based on pattern information about ambient brightness of various spaces collected for each use.

Uses may be diverse, such as living room, bathroom, master bedroom, media content viewing, exercise, kitchen, conference room, personal office, and the like.

As such, when the use of the space in which the electronic device 100 is located is identified, the processor 130 may identify a lighting environment suitable for the determined use. Here, a suitable lighting environment (range of ambient brightness) may be pre-stored for each purpose.

In this case, the processor 130 may control at least one lighting device existing in the corresponding space according to the identified lighting environment. That is, the processor 130 may automatically control the output of the lighting device so that the corresponding space has a brightness range according to the identified lighting environment.

As a result, there is an effect that the electronic device 100 can automatically create a lighting environment suitable for the purpose of the space.

Meanwhile, the various embodiments described above may be implemented by combining two or more embodiments as long as they do not conflict with or contradict each other.

Meanwhile, the various embodiments described above may be implemented in a recording medium readable by a computer or a similar device using software, hardware, or a combination thereof.

According to the hardware implementation, the embodiments described in the present disclosure are ASICs (Application Specific Integrated Circuits), DSPs (digital signal processors), DSPDs (digital signal processing devices), PLDs (programmable logic devices), FPGAs (field programmable gate arrays) ), processors, controllers, micro-controllers, microprocessors, and other electrical units for performing other functions may be implemented using at least one.

In some cases, the embodiments described herein may be implemented by the processor itself. According to the software implementation, embodiments such as the procedures and functions described in this specification may be implemented as separate software modules. Each of the above-described software modules may perform one or more functions and operations described herein.

On the other hand, the computer instructions or computer program for performing the processing operation in the electronic device 100 according to various embodiments of the present disclosure described above is a non-transitory computer-readable medium. can be stored in When the computer instructions or computer program stored in such a non-transitory computer-readable medium are executed by the processor of the specific device, the specific device performs the processing operation in the electronic device 100 according to the various embodiments described above.

The non-transitory computer-readable medium refers to a medium that stores data semi-permanently, rather than a medium that stores data for a short moment, such as a register, cache, memory, etc., and can be read by a device. Specific examples of the non-transitory computer-readable medium may include a CD, DVD, hard disk, Blu-ray disk, USB, memory card, ROM, and the like.

In the above, preferred embodiments of the present disclosure have been illustrated and described, but the present disclosure is not limited to the specific embodiments described above, and is commonly used in the technical field pertaining to the present disclosure without departing from the gist of the present disclosure as claimed in the claims. Various modifications may be made by those having the knowledge of

10: SWNT 20: Si surface
30: insulator surface 100: electronic device
110: optical sensor 120: communication unit
130: processor

Claims (10)

In the optical sensor,
single-walled carbon nanotubes; and
a Si surface forming a heterojunction with the first region of the single-walled carbon nanotube;
a first electrode provided on the Si surface;
an insulator surface on which a second region of the single-walled carbon nanotube is formed; and
a second electrode connected to the single-walled carbon nanotube on the surface of the insulator;
The single-walled carbon nanotubes are
Based on the reverse voltage between the first electrode and the second electrode, the optical sensor for outputting a current according to the input light. According to claim 1,
The Si surface is
An optical sensor comprising P-type doped Si. In an electronic device,
The optical sensor of claim 1 ;
a communication unit for performing communication with a plurality of Internet of Things (IoT) devices; and
at least one processor;
The processor is
An electronic device that controls the power of at least one IoT device among the plurality of IoT devices through the communication unit based on ambient brightness sensed through the optical sensor. 4. The method of claim 3,
The processor is
When the ambient brightness detected through the optical sensor falls within the first range, controlling the power of the first IoT device among the plurality of IoT devices to be turned on;
When the ambient brightness sensed through the optical sensor corresponds to a second range, the electronic device controls to turn on the power of a second IoT device among the plurality of IoT devices. 5. The method of claim 4,
The processor is
When the power of the first IoT device is turned on according to a user input in a state in which the ambient brightness sensed through the optical sensor corresponds to the second range, providing a guide for operation of at least one lighting device, Electronic Device. 5. The method of claim 4,
The processor is
At least one lighting device to provide ambient brightness in the first range when the power of the first IoT device is turned on according to a user input in a state where the ambient brightness detected through the optical sensor corresponds to the second range to control the electronic device. 4. The method of claim 3,
The processor is
Identifies the ambient brightness detected through the light sensor in seconds,
When the identified deviation of the ambient brightness is equal to or greater than a threshold, controlling a third IoT device among the plurality of IoT devices to perform at least one function. 8. The method of claim 7,
The processor is
Controlling the third IoT device to perform the function according to a cycle set according to the deviation. 4. The method of claim 3,
The processor is
Identify the ambient brightness detected through the light sensor in real time,
input the identified pattern information for the ambient brightness into at least one artificial intelligence model to determine the use of the space in which the electronic device is located;
identifying a lighting environment suitable for the determined use;
and controlling at least one lighting device present in the space according to the identified lighting environment. 10. The method of claim 9,
The artificial intelligence model is
When pattern information of ambient brightness is input, the electronic device is a model trained to select at least one use matching the input pattern information from among a plurality of uses.

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