KR20220096886A - Light emitting display apparatus and multi screen display apparatus using the same - Google Patents

Abstract

A light emitting display device according to some embodiments of the present specification includes: a substrate having a display part; a circuit layer disposed on the display part of the substrate; a planarization layer disposed on the circuit layer; a barrier structure disposed along an edge portion of the substrate and surrounding a side surface of the planarization layer; a light emitting element layer including a self-light emitting element and a common electrode disposed on the planarization layer and the barrier structure; and an encapsulation layer disposed on the light emitting element layer. The self-light emitting element is formed only on the upper surface of the upper surface and the side surface of the barrier structure. The common electrode is continuously formed on the upper and side surfaces of the barrier structure and may be in direct contact with a circuit layer disposed under the barrier structure.

Description

A light emitting display device and a multi-screen light emitting display device using the same

The present specification relates to a light emitting display device and a multi-screen light emitting display device using the same.

The light emitting display device is a self-emission type light emitting display device, and unlike a liquid crystal light emitting display device, it does not require a separate light source and thus can be manufactured in a lightweight and thin form. In addition, the light emitting display device is not only advantageous in terms of power consumption due to low voltage driving, but also has excellent color realization, response speed, viewing angle, and contrast ratio, and thus is in the spotlight as a next-generation light emitting display device.

A light emitting display device displays an image through light emission of a light emitting element layer including a light emitting element interposed between two electrodes. At this time, the light generated according to the light emission of the light emitting device is emitted to the outside through the electrode and the substrate.

A light emitting display device includes a display panel configured to display an image. The display panel includes a display area having a plurality of pixels for displaying an image, an encapsulation layer including an organic encapsulation layer disposed on the display area, a dam preventing the encapsulation layer from spreading, and a bezel area surrounding the display area can do.

A conventional light emitting display device requires a bezel (or a device) to cover the bezel area disposed on the edge (or edge portion) of the display panel, and the bezel width may increase due to the width of the bezel. In addition, when the bezel width of the light emitting display device is extremely reduced, the reliability of the display panel may be deteriorated due to deterioration of the light emitting element due to moisture permeation, and the organic encapsulation layer may not be filled or overflowed. Reliability may be reduced.

Recently, a multi-screen light emitting display device that realizes a large screen by arranging the light emitting display device in a grid has been commercialized.

However, in the conventional multi-screen light emitting display device, a boundary portion called a seam exists between adjacent light emitting display devices due to the bezel area or bezel of each of the plurality of light emitting display devices. This boundary portion reduces the immersion of the image by giving a sense of disconnection (or discontinuity) of the image when one image is displayed on the entire screen of the multi-screen light emitting display device.

An object of the present specification is to provide a light emitting display device having a zero bezel width while preventing a decrease in reliability of a light emitting display panel due to moisture permeation, and a multi-screen light emitting display device including the same.

The present specification provides a light emitting display device having a zero bezel width and a multi-screen light emitting display device including the same while preventing the organic encapsulation layer from filling and overflowing and reducing the reliability of the light emitting display panel due to moisture permeation make it a technical task.

The problems to be solved according to the example of the present specification are not limited to the above-mentioned problems, and other problems not mentioned are from the description below to those of ordinary skill in the art to which the technical idea of the present specification belongs. can be clearly understood.

A light emitting display device according to some embodiments of the present specification includes a substrate having a display unit, a circuit layer disposed on the display unit of the substrate, a planarization layer disposed on the circuit layer, and a planarization layer disposed along an edge portion of the substrate and surrounding the side surface of the planarization layer. includes a barrier structure, a planarization layer, a light emitting device layer including a self-luminous device and a common electrode disposed on the barrier structure, and an encapsulation layer disposed on the light emitting device layer, wherein the self-luminous device includes top and side surfaces of the barrier structure It is formed only on the upper middle surface, and the common electrode is continuously formed on the upper surface and the side surface of the barrier structure, and may be in direct contact with a circuit layer disposed under the barrier structure.

A multi-screen display device according to some embodiments of the present specification includes a plurality of display modules disposed along at least one of a first direction and a second direction crossing the first direction, and each of the plurality of display modules is a light emitting display A light emitting display device comprising: a substrate having a display portion; a circuit layer disposed on the display portion of the substrate; a planarization layer disposed on the circuit layer; and a barrier structure disposed along an edge portion of the substrate and surrounding a side surface of the planarization layer , a planarization layer, a light emitting device layer including a self-luminous device and a common electrode disposed on the barrier structure, and an encapsulation layer disposed on the light emitting device layer, wherein the self-luminous device is disposed only on the upper surface of the upper surface and the side surface of the barrier structure. is formed, and the common electrode is continuously formed on the upper surface and the side surface of the barrier structure, and may be in direct contact with a circuit layer disposed under the barrier structure.

Specific details according to various examples of the present specification other than the means for solving the above-mentioned problems are included in the description and drawings below.

An exemplary embodiment of the present specification may provide a light emitting display device having a thin bezel width while preventing reliability degradation due to moisture permeation, and a multi-screen light emitting display device including the same.

An exemplary embodiment of the present specification provides a light emitting display device having a zero bezel width while preventing the organic encapsulation layer from filling and overflowing, and preventing a decrease in reliability of a light emitting display panel due to moisture permeation, and a multi-screen light emitting display device including the same can provide

An embodiment of the present specification may provide a multi-screen light emitting display device capable of displaying an image without a sense of disconnection.

Since the contents of the problems to be solved, the problem solving means, and the effects mentioned above do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the content of the invention.

1 is a plan view illustrating a light emitting display device according to an exemplary embodiment of the present specification.
FIG. 2A is a diagram illustrating one pixel according to the exemplary embodiment shown in FIG. 1 .
FIG. 2B is a diagram illustrating one pixel according to another exemplary embodiment illustrated in FIG. 1 .
FIG. 2C is a diagram illustrating one pixel according to another exemplary embodiment illustrated in FIG. 1 .
FIG. 3 is an enlarged view of part 'A' shown in FIG. 1 .
4 is an equivalent circuit diagram of one pixel shown in FIGS. 1 and 3 .
5 is a diagram illustrating the gate driving circuit shown in FIGS. 1 and 3 .
6 is a rear perspective view illustrating a light emitting display device according to an exemplary embodiment of the present specification.
7 is a rear perspective view illustrating a light emitting display device according to another exemplary embodiment of the present specification.
Fig. 8 is a cross-sectional view taken along the line II' shown in Fig. 7;
9 is an enlarged view of part 'B' shown in FIG. 8 .
FIG. 10 is a cross-sectional view taken along line II-II' shown in FIG. 7 .
11 is an enlarged view of part 'C' shown in FIG. 8 .
12 is a view showing the structure of the barrier structure shown in FIGS. 8, 10, and 11 .
Fig. 13 is another cross-sectional view taken along the line II' shown in Fig. 7;
14 is another cross-sectional view taken along the line II-II' shown in FIG. 7 .
Fig. 15 is another cross-sectional view taken along the line II' shown in Fig. 7;
Fig. 16 is another cross-sectional view taken along the line II-II' shown in Fig. 7;
17 is an enlarged view of part 'D' shown in FIG. 15 .
18 is a diagram illustrating a multi-screen display device according to an exemplary embodiment of the present specification.
19 is a cross-sectional view taken along line III-III' shown in FIG. 18;

Advantages and features of the present specification, and a method for achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present specification to be complete, and common knowledge in the technical field to which this specification belongs It is provided to fully inform those who have the scope of the invention, and the present specification is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present specification are exemplary, and thus the present specification is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in the description of the present specification, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present specification, the detailed description thereof will be omitted. When "includes," "has," "consisting of," etc. mentioned in this specification are used, other parts may be added unless "only" is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, even if there is no explicit description of the error range, it is interpreted as including the error range.

In the case of a description of the positional relationship, for example, when the positional relationship of the two parts is described as "on," "upper," "lower," "nextly", for example, "just" Alternatively, one or more other parts may be placed between two parts unless "directly" is used.

In the case of a description of a temporal relationship, when the temporal precedence is described as “after,” to “following,” “after,” “before”, etc., it is not continuous unless “immediately” or “directly” is used. cases may be included.

Although the first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present specification.

In describing the components of the present specification, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, order, or number of the elements are not limited by the terms. When it is described that a component is “connected,” “coupled,” or “connected” to another component, the component may be directly connected or connected to the other component, but indirectly without specifically expressly stated. It should be understood that other components may be “interposed” between each component that is connected or can be connected.

“At least one” should be understood to include all combinations of one or more of the associated elements. For example, the meaning of "at least one of the first, second, and third components" means not only the first, second, or third components, but also two of the first, second, and third components. It can be said to include a combination of all or more components.

Each feature of the various embodiments of the present specification may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, referring to the embodiments of the present specification through the accompanying drawings and embodiments, as follows. The scales of the components shown in the drawings have different scales from the actual ones for convenience of description, and thus are not limited to the scales shown in the drawings.

1 is a plan view illustrating a light emitting display device according to an exemplary embodiment of the present specification.

Referring to FIG. 1 , a light emitting display device (or display panel) 10 according to an exemplary embodiment of the present specification includes a substrate 100 having a display unit AA, and a plurality of display units AA of the substrate 100 . It may include a pixel P and a barrier structure 104 .

The substrate 100 may be expressed as a first substrate, a base substrate, or a pixel array substrate. For example, the substrate 100 may be a glass substrate, a bendable or bendable thin glass substrate, or a plastic substrate.

The display area AA is an area on which an image is displayed and may be expressed as an active area, an active area, or a display area. The size of the display unit AA may be the same as the size of the substrate (or the light emitting display device) 10 . For example, the size of the display unit AA may be the same as the overall size of the first surface of the substrate 100 . Accordingly, the display unit AA is implemented (or disposed) on the entire front surface of the substrate 100 so that the substrate 100 is an opaque non-display area provided along the edge of the first surface to surround the entire display unit AA. does not include Accordingly, the entire front surface of the light emitting display device may implement the display unit AA.

The end (or outermost) of the display unit AA may overlap the outer surface OS of the substrate 100 or may be aligned with the outer surface OS of the substrate 100 . For example, based on the thickness direction Z of the light emitting display device, the side surface of the display unit AA may be aligned with a vertical extension line extending vertically from the outer surface OS of the substrate 100 . The side surface of the display unit AA may not be surrounded by a separate mechanism, but may be surrounded only by air. That is, all sides of the display unit AA may have a structure in direct contact with air without being surrounded by a separate mechanism. Accordingly, since the outer surface OS of the substrate 100 corresponding to the end of the display unit AA is surrounded only by air, in the light emitting display device according to the present specification, the end (or side) of the display unit AA is opaque. It may have an air-bezel structure surrounded by air instead of a display area or a bezel-free (or zeroized bezel) structure.

The plurality of pixels P may be arranged (or arranged) on the display unit AA of the substrate 100 to have a first interval D1 in each of the first direction X and the second direction Y. have. The first direction X may be a horizontal direction, a horizontal direction, or a first longitudinal direction (eg, a horizontal longitudinal direction) of the substrate 100 or the light emitting display device. The second direction Y may be a vertical direction or a vertical direction, or a second longitudinal direction (eg, a vertical longitudinal direction) of the substrate 100 or the light emitting display device.

Each of the plurality of pixels P may be implemented on a plurality of pixel areas defined on the display unit AA of the substrate 100 . Each of the plurality of pixel areas may have a first length L1 parallel to the first direction X and a second length L2 parallel to the second direction Y. The first length L1 may be equal to the second length L2 or may be equal to the first interval D1. The first length L1 and the second length L2 may be equal to the first distance D1 . Accordingly, the plurality of pixels (or pixel areas) P may all have the same size.

Two pixels P adjacent in each of the first direction X and the second direction Y may have the same first interval D1 within an error range in the manufacturing process. The first interval D1 may be a pitch (or pixel pitch) between two adjacent pixels P. For example, the first interval (or pixel pitch) D1 may be the shortest distance (or the shortest length) between the centers of each of the two adjacent pixels P.

Each of the plurality of pixels P according to an embodiment may include a circuit layer including a pixel circuit implemented in a pixel area on the substrate 100 and a light emitting device layer disposed on the circuit layer and connected to the pixel circuit. . The pixel circuit outputs a data current corresponding to the data signal in response to the data signal and the scan signal supplied from the pixel driving lines disposed in the pixel area. The light emitting device layer may include a self-emitting device that emits light by a data current supplied from the pixel circuit. Such pixel driving lines, a pixel circuit, and a light emitting element layer will be described later.

The plurality of pixels P may be divided into outermost pixels Po and internal pixels Pi.

The outermost pixels Po may be pixels disposed closest to the outer surface OS of the substrate 100 among the plurality of pixels P.

The second interval D2 between the center of the outermost pixels Po and the outer surface OS of the substrate 100 may be half or less than half the first interval D1 . For example, the second distance D2 may be the shortest distance (or the shortest length) between the center of the outermost pixels Po and the outer surface OS of the substrate 100 .

When the second interval D2 exceeds half of the first interval D1 , the substrate 100 is larger than the display unit AA by the difference between the half of the first interval D1 and the second interval D2 . It must have a size, and therefore, the area between the end of the outermost pixel Po and the outer surface OS of the substrate 100 may be configured as a non-display area surrounding the entire display unit AA. For example, when the second interval D2 exceeds half of the first interval D1 , the substrate 100 inevitably includes a bezel area according to the non-display area surrounding the entire display area AA. . On the other hand, when the second distance D2 is half or less than half the first distance D1 , the end of the outermost pixel Po is aligned with the outer surface OS of the substrate 100 or the display unit AA The end AAa may be aligned with the outer surface OS of the substrate 100 , and thus the display unit AA may be implemented (or disposed) on the entire front surface of the substrate 100 .

The internal pixels Pi may be pixels other than the outermost pixels Po among the plurality of pixels P or pixels surrounded by the outermost pixels Po among the plurality of pixels P. These internal pixels Pi may be implemented in a configuration or structure different from that of the outermost pixel Po.

The barrier structure 104 may be implemented at the edge of the substrate 100 or at the edge of the outermost pixels Po disposed in the display unit AA. For example, the barrier structure 104 may be disposed to have a closed loop line shape (or a closed loop shape) between the center of each of the outermost pixels Po and the outer surface OS of the substrate 100 . . Accordingly, the outermost pixel Po includes the barrier structure 104 , and thus may be implemented in a different configuration or structure from the internal pixel Pi not including the barrier structure 104 .

The barrier structure 104 according to an embodiment blocks the side vapor transmission path by separating (or disconnecting) only the self-luminous element of the light emitting element layer at the edge of the outermost pixels Po, and through this, light emission by the side vapor transmission Reliability deterioration of the device layer may be prevented or minimized. In this case, the barrier structure 104 functions to physically separate only the self-luminous element from the edge of the substrate 100 or the outermost pixels Po, and prevents moisture from penetrating in the lateral direction of the substrate 100 . function may be included.

The barrier structure 104 according to another embodiment blocks the spread or overflow of the organic encapsulation layer among the encapsulation layers disposed on the light emitting device layer at the edge of the outermost pixels Po. can play a role In this case, the barrier structure 104 functions to physically separate only the self-luminous element from the edge of the substrate 100 or the outermost pixels Po, and blocks the spread or overflow of the organic encapsulation layer. It may include a function and a function of preventing moisture penetration in the lateral direction of the substrate 100 .

The light emitting display device (or display panel) 10 according to the exemplary embodiment of the present specification may further include a groove line 105 .

The groove line 105 may be disposed in a groove region (or trench region) defined in an inner region of the barrier structure 104 . According to an embodiment, the groove line 105 may be disposed to have a closed loop line shape between the side surface of the planarization layer 102 and the barrier structure 104 . For example, the groove line 105 may be formed or implemented by removing all structures and/or steps disposed in the groove area of the inner area of the barrier structure 104 . For example, the groove line 105 may be implemented such that a circuit layer disposed between the side surface of the planarization layer 102 and the barrier structure 104 is exposed.

The light emitting display device (or display panel) 10 according to the exemplary embodiment of the present specification may further include a pad unit 110 .

The pad part 110 may be a first pad part or a front pad part. The pad unit 110 may include a plurality of pads for receiving a data signal, a gate control signal, a pixel driving power, a reference voltage, and a pixel common voltage from the driving circuit unit.

The pad part 110 may be included in the outermost pixels Po disposed on a first edge portion of the first surface of the substrate 100 parallel to the first direction X. That is, the outermost pixels Po disposed on the first edge of the substrate 100 may include at least one of the plurality of pads. Accordingly, since the plurality of pads are disposed or included in the display unit AA, a non-display area (or bezel area) according to the pad unit 110 is not formed or does not exist on the substrate 100 . Accordingly, since the outermost pixel Po includes the pad part 110 , it may be implemented in a configuration or structure different from that of the internal pixel Pi that does not include the pad part 110 .

For example, when the pad part 110 is not formed inside the outermost pixels Po and is disposed between the outermost pixels Po and the outer surface OS of the substrate 100 , the substrate 100 ) has a non-display area corresponding to the area in which the pad part 110 is formed, and due to this non-display area, a second gap between the outermost pixels Po and the outer surface OS of the substrate 100 . (D2) not only exceeds half of the first interval D1, the entire substrate 100 cannot be implemented as the display unit AA, and a separate bezel is required to cover the non-display area. On the other hand, the pad part 110 according to the present specification is disposed between the outermost surface OS of the substrate 100 and the outermost pixels Po and is included in the outermost pixels Po, so that the substrate ( A non-display area (or a bezel area) according to the pad part 110 is not formed or does not exist between the outer surface OS of 100 and the outermost pixels Po.

The pad unit 110 according to an embodiment may include first pixel driving power pads, first data pads, first reference voltage pads, first gate pads, and first pixel common voltage pads. , but is not limited thereto.

The light emitting display device (or display panel) 10 according to the exemplary embodiment of the present specification may further include a gate driving circuit 150 .

The gate driving circuit 150 is disposed in the display unit AA to supply a scan signal (or a gate signal) to the pixels P disposed on the substrate 100 . The gate driving circuit 150 may simultaneously supply a scan signal to the pixels P disposed on a horizontal line parallel to the first direction X. For example, the gate driving circuit 150 may supply at least one scan signal to the pixels P disposed on one horizontal line.

The gate driving circuit 150 according to an exemplary embodiment may be implemented as a shift register including a plurality of stage circuit units. That is, the light emitting display device according to the present example may include a shift register disposed on the display unit AA on the substrate 100 and supplying a scan signal to the pixels P.

Each of the plurality of stage circuit units may include a plurality of branch circuits spaced apart from each other on each horizontal line of the substrate 100 in the first direction (X). Each of the plurality of branch circuits includes at least one thin film transistor (or branch thin film transistor), and is disposed between at least one pixel P (or pixel region) within one horizontal line along the first direction X. can be Each of the plurality of stage circuit units generates a scan signal according to driving of a plurality of branch circuits according to a gate control signal supplied through gate control lines scattered among the plurality of pixels P in the display unit AA and generates a corresponding scan signal. A scan signal may be supplied to the pixels P disposed on a horizontal line.

FIG. 2A is a diagram illustrating one pixel according to the exemplary embodiment illustrated in FIG. 1 , FIG. 2B is a diagram illustrating one pixel according to another exemplary embodiment illustrated in FIG. 1 , and FIG. 2C is the diagram illustrated in FIG. 1 . It is a diagram illustrating one pixel according to another embodiment.

1 and 2A , one pixel (or unit pixel) P according to an exemplary embodiment of the present specification includes first to fourth sub-pixels SP1, SP2, and SP3 disposed in the pixel area PA. , SP4).

The first subpixel SP1 is disposed in the first subpixel area of the pixel area PA, the second subpixel SP2 is disposed in the second subpixel area of the pixel area PA, and the third subpixel SP3 may be disposed in the third subpixel area of the pixel area PA, and the fourth subpixel SP4 may be disposed in the fourth subpixel area of the pixel area PA.

Each of the first to fourth sub-pixels SP1 , SP2 , SP3 , and SP4 according to an embodiment may be disposed in a 2Х2 shape or a quad structure. Each of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 may include an emission area EA1 , EA2 , EA3 , EA4 and a circuit area CA1 , CA2 , CA3 , and CA4 . For example, the light emitting areas EA1 , EA2 , EA3 , and EA4 may be expressed as an opening area, an opening, or a light emitting part.

Each of the light emitting areas EA1 , EA2 , EA3 , and EA4 of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 may have an equivalent quad structure having a square shape having the same size as each other. According to an embodiment, the light emitting areas EA1 , EA2 , EA3 , and EA4 having an even quad structure have a size smaller than a quarter size of the pixel P and the central portion CP of the pixel P in the subpixel area. ), or may be arranged to be concentrated in the center CP of the pixel P. According to another exemplary embodiment, the light emitting areas EA1 , EA2 , EA3 , and EA4 having a uniform quad structure may have a size smaller than a quarter size of the pixel P and be disposed in the center of the corresponding subpixel area.

1 and 2B , each of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 according to another exemplary embodiment may be arranged in a non-uniform quad structure having different sizes. For example, the emission areas EA1 , EA2 , EA3 , and EA4 of each of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 may be arranged in a non-uniform quad structure having different sizes.

The size of each of the first to fourth sub-pixels SP1 , SP2 , SP3 , and SP4 having a non-uniform quad structure may be set according to resolution, luminous efficiency, or image quality. According to an embodiment, when the emission areas EA1 , EA2 , EA3 , and EA4 have a non-uniform quad structure, each of the emission areas EA1 and EA2 of the first to fourth sub-pixels SP1 , SP2 , SP3 and SP4 , EA3 and EA4 , the emission area EA4 of the fourth subpixel SP4 may have the smallest size, and the emission area EA3 of the third subpixel SP3 may have the largest size. For example, the emission areas EA1 , EA2 , EA3 , and EA4 having a non-uniform quad structure may be concentrated around the central portion CP of the pixel P.

1 and 2C , each of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 according to another exemplary embodiment may have a 1Х4 shape or a uniform stripe structure. For example, each of the light emitting areas EA1 , EA2 , EA3 , and EA4 of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 may have a 1Х4 shape or a uniform stripe structure.

The light emitting areas EA1, EA2, EA3, and EA4 of each of the first to fourth subpixels SP1, SP2, SP3, and SP4 having a uniform stripe structure have a short side parallel to the first direction (X) and a second direction (Y). ) and may have a rectangular shape with a long side parallel to it.

The light emitting areas EA1 , EA2 , EA3 , and EA4 having a uniform stripe structure according to an exemplary embodiment have a size smaller than a quarter size of the pixel P and the central portion CP of the pixel P in the sub-pixel area It may be disposed to be shifted toward the side or may be disposed to be concentrated in the central portion CP of the pixel P.

The light emitting areas EA1 , EA2 , EA3 , and EA4 having a uniform stripe structure according to another exemplary embodiment may have a size smaller than a quarter size of the pixel P and may be disposed in the center of the corresponding subpixel area.

According to another exemplary embodiment, the light emitting areas EA1 , EA2 , EA3 , and EA4 having a uniform stripe structure may have the same size as the quarter size of the pixel P and may be disposed in the entire corresponding sub-pixel area.

Alternatively, the emission areas EA1 , EA2 , EA3 , and EA4 of each of the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 may have a non-uniform stripe structure having different sizes. According to an exemplary embodiment, when the emission areas EA1, EA2, EA3, and EA4 have a non-uniform stripe structure, each of the emission areas EA1 and EA2 of the first to fourth sub-pixels SP1, SP2, SP3, and SP4 , EA3 and EA4, the emission area EA4 of the fourth sub-pixel SP4 may have the smallest size, and the emission area EA3 of the third sub-pixel SP3 may have the largest size, The present invention is not limited thereto.

2A to 2C , the circuit areas CA1 , CA2 , CA3 , CA4 of each of the first to fourth subpixels SP1 , SP2 , SP3 and SP4 correspond to the corresponding emission areas EA1 , EA2 , EA3 , EA4). The circuit areas CA1 , CA2 , CA3 , and CA4 may include a circuit circuit for emitting a corresponding sub-pixel and pixel driving lines. For example, the circuit areas CA1 , CA2 , CA3 , and CA4 may be expressed as a non-light-emitting area, a non-opening area, a non-light-emitting area, a non-opening area, or a peripheral area.

Additionally, the pixel pitch D1 according to the increase in the aperture ratio of the sub-pixels SP1, SP2, SP3, and SP4 corresponding to the size of the emission areas EA1, EA2, EA3, and EA4 or the high resolution of the pixel P ), the light emitting areas EA1, EA2, EA3, and EA4 of each of the first to fourth subpixels SP1, SP2, SP3, and SP4 are part of the circuit areas CA1, CA2, CA3, CA4 or It may be extended onto the circuit areas CA1 , CA2 , CA3 , CA4 so as to overlap the entirety. For example, since each of the light emitting areas EA1 , EA2 , EA3 , and EA4 of the first to fourth subpixels SP1 , SP2 , SP3 and SP4 has a top light emitting structure, the corresponding circuit areas CA1 , CA2 , CA3, CA4) may be disposed to overlap. In this case, the emission areas EA1 , EA2 , EA3 , and EA4 may have the same size as the circuit areas CA1 , CA2 , CA3 , or CA4 .

2A to 2C , the first subpixel SP1 is light of a first color, the second subpixel SP2 is light of a second color, the third subpixel SP3 is light of a third color, and The fourth sub-pixel SP4 may be implemented to emit light of the fourth color, respectively. Each of the first to fourth colors may be different. As an embodiment, the first color may be red, the second color may be blue, the third color may be white, and the fourth color may be green. As another embodiment, some of the first to fourth colors may be the same. For example, the first color may be red, the second color may be first green, the third color may be second green, and the fourth color may be blue.

Optionally, a white subpixel emitting white light among the first to fourth subpixels SP1 , SP2 , SP3 , and SP4 having a uniform stripe structure or a non-uniform stripe structure may be omitted.

3 is an enlarged view of part 'A' shown in FIG. 1 , and FIG. 4 is an equivalent circuit diagram of one pixel shown in FIGS. 1 and 3 .

1, 3, and 4 , the substrate 100 according to an exemplary embodiment of the present specification includes pixel driving lines DL, GL, PL, CVL, RL, and GCL, and a plurality of pixels P. , a common electrode CE, a plurality of common electrode connection parts CECP, a barrier structure 104 , a groove line 105 , and a pad part 110 .

The pixel driving lines DL, GL, PL, CVL, RL, and GCL include a plurality of data lines DL, a plurality of gate lines GL, a plurality of pixel driving power lines PL, and a plurality of pixel common voltage lines. (CVL), a plurality of reference voltage lines RL, and gate control lines GCL may be included.

Each of the plurality of data lines DL may extend along the second direction Y and may be disposed on the display unit AA of the substrate 100 to have a predetermined interval along the first direction X. . For example, among the plurality of data lines DL, the odd-numbered data line DLo is a first edge portion of each of the plurality of pixel areas PA arranged on the substrate 100 in the second direction Y. The even-numbered data line DLe may be disposed on a second edge portion of each of the plurality of pixel areas PA arranged on the substrate 100 along the second direction Y. It is not limited.

Each of the plurality of gate lines GL may extend long in the first direction X and may be disposed on the display unit AA of the substrate 100 to have a predetermined interval along the second direction Y. . For example, among the plurality of gate lines GL, the odd-numbered gate line GLo is a third edge portion of each of the plurality of pixel areas PA arranged on the substrate 100 in the first direction X. The even-numbered gate line GLe may be disposed at a fourth edge portion of each of the plurality of pixel areas PA arranged on the substrate 100 along the first direction X, but It is not limited.

Each of the plurality of pixel driving power lines PL extends along the second direction Y and is disposed on the display unit AA of the substrate 100 to have a predetermined interval along the first direction X. can For example, among the plurality of pixel driving power lines PL, the odd-numbered pixel driving power line PL may be disposed at a first edge portion of the odd-numbered pixel area PA with respect to the first direction X. In addition, the even-numbered pixel driving power line PL may be disposed on the second edge of the even-numbered pixel area PA with respect to the first direction X, but is not limited thereto.

Two adjacent pixel driving power lines PL among the plurality of pixel driving power lines PL are connected through a plurality of power sharing lines PSL disposed in each pixel area PA arranged in the second direction Y. can be connected to each other. For example, the plurality of pixel driving power lines PL may have a ladder structure or a mesh structure by being electrically connected to each other by a plurality of power sharing lines PSL. Since the plurality of pixel driving power lines PL have a ladder structure or a mesh structure, a voltage drop (IR drop) of the pixel driving power supply according to the line resistance of the pixel driving power line PL can be prevented or minimized, Accordingly, in the light emitting display device according to the present example, image quality deterioration due to a deviation in pixel driving power supplied to each of the pixels P arranged in the display unit AA may be prevented or minimized.

Each of the plurality of power sharing lines PSL may branch from an adjacent pixel driving power line PL so as to be parallel to the first direction X and be disposed in the middle area of each pixel area PA, but is not limited thereto. .

Each of the plurality of pixel common voltage lines CVL extends along the second direction Y and is disposed on the display unit AA of the substrate 100 to have a predetermined interval along the first direction X. can For example, each of the plurality of pixel common voltage lines CVL may be disposed on a first edge portion of the even-numbered pixel area PA with respect to the first direction X, but is not limited thereto.

Each of the plurality of reference voltage lines RL may be disposed on the display unit AA of the substrate 100 to extend long in the second direction Y and to have a predetermined interval in the first direction X. . Each of the plurality of reference voltage lines RL may be disposed in a central area of each pixel area PA arranged in the second direction Y, but is not limited thereto.

Each of the plurality of reference voltage lines RL may be shared by two sub-pixels (SP1, SP2) (SP3, SP4) adjacent in the first direction X in each pixel area PA. To this end, each of the plurality of reference voltage lines RL may include a reference branch line RDL. The reference branch line RDL branches (or protrudes) toward two adjacent sub-pixels (SP1, SP2) (SP3, SP4) in the first direction X in each pixel area PA, so that the two adjacent sub-pixels It may be electrically connected to the pixels (SP1, SP2) (SP3, SP4).

Each of the plurality of gate control lines GCL may be disposed on the display portion AA of the substrate 100 to extend long in the second direction Y and to have a predetermined interval in the first direction X. . For example, each of the plurality of gate control lines GCL may be disposed at a boundary between the plurality of pixel areas PA or between two adjacent pixel areas PA with respect to the first direction X. .

Each of the plurality of pixels P may include at least three sub-pixels. For example, each of the plurality of pixels P may include first to fourth sub-pixels SP1 to SP4.

Each of the first to fourth subpixels SP1 to SP4 may include a pixel circuit PC disposed on the substrate 100 and a light emitting device layer electrically connected to the pixel circuit PC.

The pixel circuit PC according to an embodiment may be disposed in the circuit area of the pixel area PA and may be connected to adjacent gate lines GLo and GLe, the data lines DLo and DLe, and the pixel driving power line PL. have. For example, the pixel circuit PC disposed in the first subpixel SP1 may be connected to the odd-numbered data line DLo and the odd-numbered gate line GLo, and disposed in the second subpixel SP2 The pixel circuit PC may be connected to the even-numbered data line DLe and the odd-numbered gate line GLo, and the pixel circuit PC disposed in the third subpixel SP3 is connected to the odd-numbered data line DLo The pixel circuit PC disposed in the fourth subpixel SP4 may be connected to the even-numbered gate line GLe, and may be connected to the even-numbered data line DLe and the even-numbered gate line GLe.

The pixel circuit PC of each of the first to fourth subpixels SP1 to SP4 receives data supplied from the corresponding data lines DLo and DLe in response to the scan signal supplied from the corresponding gate lines GLo and GLe. A signal may be sampled and a current flowing from the pixel driving power line PL to the light emitting device layer may be controlled based on the sampled data signal.

The pixel circuit PC according to an embodiment may include a first switching thin film transistor Tsw1, a second switching thin film transistor Tsw2, a driving thin film transistor Tdr, and a storage capacitor Cst, but limited thereto. it is not going to be In the following description, a thin film transistor will be referred to as a “TFT”.

The first switching TFT Tsw1 has a gate electrode connected to the gate lines GLo and GLe, a first source/drain electrode connected to the data line DL, and a gate node n1 connected to the driving TFT Tdr. and a second source/drain electrode. The first switching TFT Tsw1 may supply the data voltage supplied from the data line DL to the gate node n1 of the driving TFT Tdr according to the scan signal supplied to the corresponding gate lines GLo and GLe. have.

The second switching TFT Tsw2 has a gate node connected to the gate lines GLo and GLe, a first source/drain electrode connected to the source node n2 of the driving TFT Tdr, and a reference voltage line RL. and connected second source/drain electrodes. The second switching TFT Tsw2 supplies the reference voltage supplied to the reference voltage line RL to the source node n2 of the driving TFT Tdr according to the scan signal supplied to the corresponding gate lines GLo and GLe. can

The storage capacitor Cst may be formed between the gate node n1 and the source node n2 of the driving TFT Tdr. The storage capacitor Cst according to an embodiment includes a first capacitor electrode connected to the gate node n1 of the driving TFT Tdr, a second capacitor electrode connected to the source node n2 of the driving TFT Tdr, and the first and a dielectric layer formed in an overlapping region of the capacitor electrode and the second capacitor electrode. The storage capacitor Cst charges the difference voltage between the gate node n1 and the source node n2 of the driving TFT Tdr, and then switches the driving TFT Tdr according to the charged voltage.

The driving thin film transistor Tdr includes a gate electrode (or gate node n1) commonly connected to the second source/drain electrode of the first switching TFT Tsw1 and the first capacitor electrode of the storage capacitor Cst, the second A first source/drain electrode (or a source node n2) commonly connected to the first source/drain electrode of the switching TFT Tsw2, the second capacitor electrode of the storage capacitor Cst, and the pixel electrode PE of the light emitting element layer ), and a second source/drain electrode (or drain node) connected to the pixel driving power line PL. The driving TFT Tdr is turned on by the voltage of the storage capacitor Cst to control the amount of current flowing from the pixel driving power line PL to the light emitting device layer.

The light emitting device layer may be disposed in the light emitting area EA of the pixel area PA to be electrically connected to the pixel circuit PC. The light emitting device layer according to an embodiment includes a pixel electrode PE electrically connected to the pixel circuit PC, a common electrode CE electrically connected to the pixel common voltage line CVL, and the pixel electrode PE and the common electrode It may include a self-light emitting device ED interposed between (CE). For example, the self-emission device ED may be separated by the barrier structure 104 . In addition, the common electrode CE is formed on the substrate 100 so as to completely surround each of the barrier structure 104 and the separation pattern of the self-light emitting device ED separated by the self-emitting device ED and the barrier structure 104 . can be placed. For example, the common electrode CE is in direct contact with the self-light emitting device ED and the insulating layer disposed around the ends of each of the separation patterns of the self-emitting device ED, thereby forming a space between the insulating layer and the self-emitting device ED. It is possible to block or prevent the penetration of moisture through the boundary of the

Each of the plurality of common electrode connection parts CECP electrically connects the common electrode CE between the plurality of pixels P overlapping each of the plurality of pixel common voltage lines CVL to each of the plurality of pixel common voltage lines CVL. connect Each of the plurality of common electrode connection parts CECP according to an exemplary embodiment includes each of the plurality of pixel common voltage lines CVL at a boundary between the plurality of pixels P or between the plurality of pixels in the second direction Y. The common electrode CE may be electrically connected to each of the plurality of pixel common voltage lines CVL by being electrically connected to and electrically connected to a portion of the common electrode CE.

Each of the plurality of common electrode connection parts CECP is disposed between the plurality of pixels P to electrically connect each of the plurality of pixel common voltage lines CVL and the common electrode CE according to the sheet resistance of the common electrode CE. It is possible to prevent or minimize the voltage drop (IR drop) of the pixel common voltage, and thus, the light emitting display device according to the present example may be configured to compensate for the deviation of the pixel common voltage supplied to each pixel P arranged in the display unit AA. The resulting image quality can be prevented or minimized.

According to an embodiment, each of the plurality of common electrode connection parts CECP may be formed together with the pixel electrode PE having at least a two-layer structure to be electrically connected to each of the plurality of pixel common voltage lines CVL. Each of the plurality of common electrode connection parts CECP may be electrically connected to the common electrode CE through a side contact structure having a cross-sectional structure in the form of " ( " or "<". For example, the plurality of common electrode connection parts ( CECP) each of the first and second metal layers, each of the plurality of common electrode connection portions CECP corresponds to an undercut structure or a tapered structure formed on a side surface of the first metal layer by an etching rate between the first and second metal layers For example, when each of the plurality of common electrode connection parts CECP is formed of the first to third metal layers, each of the plurality of common electrode connection parts CECP is formed between the first and second metal layers. It may have a side contact structure corresponding to the undercut structure or the tapered structure formed on the side surface of the first metal layer by the etching rate.

Each of the barrier structure 104 and the groove line 105 is disposed or implemented at the edge of the substrate 100 or the outermost pixel Po to have a closed loop line shape (or a closed loop shape), which is illustrated in FIG. 1 . Since it is the same as described above, a redundant description thereof will be omitted.

The pad part 110 may be disposed on a first edge portion of the first surface of the substrate 100 parallel to the first direction (X). The pad part 110 may be disposed on a third edge portion of the outermost pixel areas PAo disposed on the first edge portion of the substrate 100 . In the second direction Y, an end of the pad part 110 may overlap or be aligned with an end of the outermost pixel areas PAo. Accordingly, the pad part 110 is included (or disposed) in the outermost pixel areas PAo disposed on the first edge of the substrate 100 , and thus the pad part 110 is disposed on the substrate 100 according to the ratio according to the pad part 110 . A display area (or a bezel area) is not formed or does not exist.

The pad unit 110 may include a plurality of first pads disposed on a first edge portion of the substrate 100 in parallel with each other in the first direction X. The plurality of first pads include first data pads DP, first gate pads GP, first pixel driving power pads PPP, first reference voltage pads RVP, and a first pixel common. They may be classified (or classified) into voltage pads CVP.

Each of the first data pads DP may be individually (or one-to-one) connected to one end of each of the plurality of data lines DLo and DLe disposed on the substrate 100 .

Each of the first gate pads GP may be individually (or one-to-one) connected to one end of each of the gate control lines disposed on the substrate 100 . The plurality of first gate pads GP according to an embodiment may include a first start signal pad, a plurality of first shift clock pads, a plurality of first carry clock pads, at least one first gate driving power pad, and at least It may be divided (or classified) into one first gate common power pad.

Each of the first pixel driving power pads PPP may be individually (or one-to-one) connected to one end of each of the plurality of pixel driving power lines PL disposed on the substrate 100 . Each of the first reference voltage pads RVP may be individually (or one-to-one) connected to one end of each of the plurality of reference voltage lines RL disposed on the substrate 100 . Each of the first pixel common voltage pads CVP may be individually (or one-to-one) connected to one end of each of the plurality of pixel common voltage lines CVL disposed on the substrate 100 .

The pad unit 110 according to an exemplary embodiment includes a first pixel driving power pad PPP, a first data pad DP, a first reference power pad RVP, and a first data pad along a first direction X. (DP), a first gate pad GP, a first pixel common voltage pad CVP, a first data pad DP, a first reference power pad RVP, a first data pad DP, and a first It may include a plurality of pad groups PG arranged in the order of the pixel driving power pads PPP. Each of the plurality of pad groups PG may be connected to two adjacent pixels P disposed in the first direction X. For example, each of the plurality of pad groups PG includes a first pixel driving power pad PPP and a first data pad DP that are sequentially disposed in the odd-numbered pixel area PA in the first direction X. , a first pad group PG1 including a first reference power pad RVP, a first data pad DP, and a first gate pad GP, and an even-numbered pixel area along the first direction X A first pixel common voltage pad CVP, a first data pad DP, a first reference power pad RVP, a first data pad DP, and a first pixel driving power pad continuously disposed in the PA The second pad group PG2 including PPP may be included.

The substrate 100 according to an embodiment may further include a plurality of auxiliary voltage lines SVL and a plurality of auxiliary line connection units SLCP.

Each of the plurality of auxiliary voltage lines SVL may extend along the second direction Y and be disposed adjacent to each of the plurality of pixel common voltage lines CVL. Each of the plurality of auxiliary voltage lines SVL is not electrically connected to the first pixel common voltage pad CVP, but is electrically connected to the adjacent pixel common voltage line CVL, so that the plurality of auxiliary voltage lines SVL are electrically connected to the adjacent pixel common voltage line CVL. voltage can be supplied. To this end, the substrate 100 according to the present specification may further include a plurality of line connection patterns LCP that electrically connect the pixel common voltage line CVL and the auxiliary voltage line SVL adjacent to each other.

Each of the plurality of line connection patterns LCP is disposed on the substrate 100 to cross the pixel common voltage line CVL and the auxiliary voltage line SVL adjacent to each other, and is disposed on the pixel common voltage line adjacent to each other through a line jumping structure. CVL) and the auxiliary voltage line SVL may be electrically connected. For example, one side of each of the plurality of line connection patterns LCP is electrically connected to a portion of the auxiliary voltage line SVL through a first line contact hole formed in an insulating layer on the auxiliary voltage line SVL, and The other side of each of the line connection patterns LCP may be electrically connected to a portion of the pixel common voltage line CVL through a second line contact hole formed in an insulating layer on the pixel common voltage line CVL.

Each of the plurality of auxiliary line connection parts SLCP electrically connects the common electrode CE to each of the plurality of auxiliary voltage lines SVL between the plurality of pixels P overlapping each of the plurality of auxiliary voltage lines SVL. . Each of the plurality of auxiliary line connection parts SLCP according to an embodiment is connected to each of the plurality of auxiliary voltage lines SVL at a boundary between the plurality of pixels P or between the plurality of pixels in the second direction Y. The common electrode CE may be electrically connected to each of the plurality of auxiliary voltage lines SVL by being electrically connected and electrically connected to a portion of the common electrode CE. Accordingly, the common electrode CE may be additionally connected to each of the plurality of auxiliary voltage lines SVL through the plurality of auxiliary line connection units SLCP. Accordingly, in the light emitting display device according to the present example, image quality deterioration due to a deviation of the pixel common voltage supplied to each of the pixels P arranged in the display unit AA may be further prevented or further minimized. Further, in the light emitting display device according to the present example, the pixel common voltage line CVL and the first pixel common voltage pad CVP connected to each of the plurality of auxiliary voltage lines SVL are not additionally disposed (or formed). A pixel common voltage may be supplied to each of the plurality of auxiliary voltage lines SVL through each of the plurality of line connection patterns LCP.

The substrate 100 according to an embodiment of the present specification may further include an encapsulation layer.

The encapsulation layer according to an embodiment may include an inorganic encapsulation layer disposed on the substrate 100 to completely surround the light emitting device layer and the barrier structure 104 . For example, the inorganic encapsulation layer entirely surrounds the common electrode CE of the light emitting device layer, and directly contacts the insulating layer disposed around the end of the common electrode CE, thereby forming a boundary between the insulating layer and the common electrode CE. can block or prevent moisture ingress.

The encapsulation layer according to another embodiment may include a first inorganic encapsulation layer (or first encapsulation layer) completely surrounding the light emitting device layer and the barrier structure 104 , and a second inorganic encapsulation layer disposed on the first inorganic encapsulation layer (or a third encapsulation layer), and an organic encapsulation layer (or second encapsulation layer) interposed between the first and second encapsulation layers disposed on the encapsulation region defined by the barrier structure 104 . .

The organic encapsulation layer may cover the entire surface (or upper surface) of the light emitting device layer and may flow toward the end of the substrate 100 , and the spread (or flow) of the organic encapsulation layer may be blocked by the barrier structure 104 . For example, the spreading (or flow) of the organic encapsulation layer may smoothly proceed to the barrier structure 104 by the groove line 105 , thereby causing the microscopicity of the organic encapsulation layer generated in the inner region of the barrier structure 104 . The charging phenomenon can be prevented. The barrier structure 104 may define or define a disposition area (or encapsulation area) of the organic encapsulation layer, and may further block or prevent spreading or overflow of the organic encapsulation layer.

5 is a diagram illustrating the gate driving circuit shown in FIGS. 1 and 3 .

1, 3, and 5 , the gate driving circuit 150 according to the exemplary embodiment of the present specification may be implemented (or embedded) in the display unit AA of the substrate 100 . The gate driving circuit 150 may generate a scan signal based on the gate control signal supplied through the pad unit 110 and the gate control lines GCL and sequentially supply the scan signal to the plurality of gate lines GL.

The gate control lines GCL may include a start signal line, a plurality of shift clock lines, at least one gate driving voltage line, and at least one gate common voltage line. The gate control lines GCL may extend long in the second direction Y and may be disposed on the display portion AA of the substrate 100 to have a predetermined interval in the first direction X. For example, the gate control lines GCL may be disposed between the at least one pixel P along the first direction X.

The gate driving circuit 150 according to an embodiment may be implemented as a shift register including a plurality of stage circuit units 1501 to 150m.

Each of the plurality of stage circuit units 1501 to 150m may be individually disposed on each horizontal line on the first surface of the substrate 100 along the first direction X, and may be dependently connected to each other along the second direction Y have. Each of the plurality of stage circuit units 1501 to 150m generates a scan signal according to a predetermined order in response to a gate control signal supplied through the pad unit 110 and the gate control lines GCL to generate a corresponding gate line GL. can be supplied to

Each of the plurality of stage circuit units 1501 to 150m according to an embodiment may include a plurality of branch circuits 1511 to 151n and a branch network 153 .

Each of the plurality of branch circuits 1511 to 151n may be selectively connected to the gate control lines GCL through the branch network 153 and may be electrically connected to each other through the branch network 153 . Each of the plurality of branch circuits 1511 to 151n generates a scan signal according to the gate control signal supplied through the gate control lines GCL and the voltage of the branch network 153 to be supplied to the corresponding gate line GL. can

Each of the plurality of branch circuits 1511 to 151n may include at least one TFT (or branch TFT) from among the plurality of TFTs constituting one stage circuit unit 1501 to 150m. Any one of the plurality of branch circuits 1511 to 151n may include a pull-up TFT connected to the gate line GL. Another one of the plurality of branch circuits 1511 to 151n may include a pull-down TFT connected to the gate line GL.

Each of the plurality of branch circuits 1511 to 151n according to an embodiment is disposed in a circuit area between two adjacent pixels P in each horizontal line of the substrate 100 or between at least two adjacent pixels P It may be disposed in the circuit area, but is not limited thereto. For example, each of the plurality of branch circuits 1511 to 151n may include at least one adjacent at least one according to the number of TFTs constituting one stage circuit unit 1501 to 150m and the number of pixels P disposed in one horizontal line. It may be disposed in a circuit region (or boundary portion) between the pixels P.

The branch network 153 may be disposed on each horizontal line of the substrate 100 and electrically connect the plurality of branch circuits 1511 to 151n to each other. The branch network 153 according to an embodiment may include a plurality of control node lines and a plurality of network lines.

The plurality of control node lines may be disposed on each horizontal line of the substrate 100 and may be selectively connected to the plurality of branch circuits 1511 to 151n on one horizontal line. For example, the plurality of control node lines may be disposed in an upper edge region (or a lower edge region) among pixel regions arranged on each horizontal line of the substrate 100 .

The plurality of network lines may be selectively connected to the gate control lines GCL disposed on the substrate 100 and may be selectively connected to the plurality of branch circuits 1511 to 151n. For example, the plurality of network lines may supply gate control signals supplied from the gate control lines GCL to the corresponding branch circuits 1511 to 151n, and transmit signals between the plurality of branch circuits 1511 to 151n. have.

As described above, according to this example, since the gate driving circuit 150 is disposed in the display area AA of the substrate 100 , it is between the center of the outermost pixel area PAo and the outer surfaces OS of the substrate 100 . The second interval D2 of , may be less than or equal to half of the first interval (or pixel pitch) D1 between adjacent pixel areas PA. For example, when the gate driving circuit 150 is not disposed in the display portion AA of the substrate 100 but is disposed at the edge of the substrate 100 , the second gap D2 is the first gap D1 . cannot have less than half of Accordingly, in the light emitting display device according to another exemplary embodiment of the present specification, the gate driving circuit 150 is disposed in the display portion AA of the substrate 100 so that the second interval D2 is less than half of the first interval D1 . In addition, it may have an air bezel structure with no bezel area or a zeroed bezel.

6 is a rear perspective view illustrating a light emitting display device according to an exemplary embodiment of the present specification.

1, 3, and 6 , in the light emitting display device according to an embodiment of the present specification, the second pad part 210 disposed on the rear surface (or rear surface) 100b of the substrate 100 is further added. may include

The second pad part 210 may be disposed on one edge part (or the first rear edge part) of the back surface 100b of the substrate 100 overlapping the pad part 110 disposed on the front surface of the substrate 100 . have. In the following description of FIG. 6 , the pad unit 110 disposed on the front surface of the substrate 100 will be referred to as a “first pad unit 110”.

The second pad unit 210 may include a plurality of second pads disposed at regular intervals along the first direction (X) and overlapping each of the pads of the pad unit 110 . In the following description of FIG. 6 , the pad of the first pad unit 110 will be referred to as a “first pad”.

The plurality of second pads includes second pixel driving power pads and first data pads overlapping each of the first pixel driving power pads PPP among the first pads disposed on the first pad unit 110 . DP), second data pads overlapping each other, second reference voltage pads overlapping each of the first reference voltage pads RVP, second gate pads overlapping each of the first gate pads GP; and second pixel common voltage pads overlapping each of the first pixel common voltage pads CVP.

The light emitting display device according to an exemplary embodiment of the present specification may further include at least one third pad unit 230 and a link line unit 250 disposed on the rear surface 100b of the substrate 100 .

At least one third pad unit (or input pad unit) 230 may be disposed on the rear surface 100b of the substrate 100 . For example, the at least one third pad part 230 may be disposed in a middle portion adjacent to one edge portion of the rear surface 100b of the substrate 100 . The at least one third pad unit 230 according to an embodiment may include a plurality of third pads (or input pads) spaced apart from each other to have a constant interval. For example, the plurality of third pads may include third pixel driving power pads, third data pads, third reference voltage pads, third gate pads, and third pixel common voltage pads.

The link line unit 250 may include a plurality of link lines disposed between the second pad unit 210 and the at least one third pad unit 230 .

The link line unit 250 according to an exemplary embodiment includes pixel driving power link lines connecting the second pixel driving power pads and the third pixel driving power pads individually (or one-to-one), the second data pads, and the third Data link lines that individually (or one-to-one) connect the data pads, reference voltage link lines that individually (or one-to-one) connect the second reference voltage pads and the third reference voltage pads, the second gate pads and the second It may include gate link lines individually (or one-to-one) connecting the three gate pads, and a pixel common voltage link line connecting the second pixel common voltage pads and the third pixel common voltage pads.

The pixel common voltage link line includes a first common link line 251 disposed between the second pad unit 210 and at least one third pad unit 230 and commonly connected to the second pixel common voltage pads; A second common link line 253 commonly connected to the three pixel common voltage pads and electrically connected to the first common link line 251 may be included. The second common link line 253 may be disposed on a different layer from the first common link line 251 and may be electrically connected to the first common link line 251 through a via hole. The size of the second common link line 253 may gradually increase from the at least one third pad part 230 toward the edge of the substrate 100 in order to minimize the voltage drop of the pixel common voltage.

The light emitting display device according to the exemplary embodiment of the present specification may further include a routing unit 400 disposed on one side OS of the substrate 100 .

The routing unit 400 may be disposed to surround the first pad unit 110 and the outer surface OS and the second pad unit 210 of the substrate 100 .

Routing unit 400 according to an embodiment may include a plurality of routing lines (410). Each of the plurality of routing lines 410 is disposed at regular intervals along the first direction (X) and surrounds the first pad part 110 and the outer surface OS and the second pad part 210 of the substrate 100 . and may be electrically connected to the first pads of the first pad unit 110 and the second pads of the second pad unit 210 one-to-one. According to one embodiment, each of the plurality of routing lines 410 may be formed by a printing process using a conductive paste. According to another embodiment, each of the plurality of routing lines 410 may be formed by a transfer process of transferring the conductive paste pattern by transferring the conductive paste pattern to a transfer pad made of a flexible material. For example, the conductive paste may include a silver (Ag) paste, but is not limited thereto.

A plurality of routing lines 410 according to an embodiment include pixel power routing lines 411 , data routing lines 413 , reference voltage routing lines 415 , gate routing lines 417 , and a pixel common Voltage routing lines 419 may be classified (or divided).

Each of the pixel power routing lines 411 is formed to surround the first pad part 110 , the outer surface OS, and the second pad part 210 , and the first pixel driving power of the first pad part 110 . The pads PPP and the second pixel driving power pads of the second pad unit 210 may be electrically connected one-to-one.

Each of the data routing lines 413 is formed to surround the first pad part 110 , the outer surface OS, and the second pad part 210 , and the first data pads ( DP) and the second data pads of the second pad unit 210 may be electrically connected one-to-one.

Each of the reference voltage routing lines 415 is formed to surround the first pad unit 110 , the outer surface OS, and the second pad unit 210 , and a first reference voltage pad of the first pad unit 110 . The RVP may be electrically connected one-to-one to the second reference voltage pads of the second pad unit 210 .

Each of the gate routing lines 417 is formed to surround the first pad part 110 , the outer surface OS, and the second pad part 210 , and the first gate pads ( GP) and the second gate pads of the second pad unit 210 may be electrically connected one-to-one.

Each of the pixel common voltage routing lines 419 is formed to surround the first pad part 110 , the outer surface OS, and the second pad part 210 , and the first pixel common of the first pad part 110 . The voltage pads CVP and the second pixel common voltage pads of the second pad unit 210 may be electrically connected one-to-one.

Routing unit 400 according to an embodiment may further include an edge coating layer.

The edge coating layer may be implemented to cover each of the plurality of routing lines 410 . The edge coating layer according to an embodiment may be implemented to cover the entirety of the first edge portion and the outer surface (OS) of the substrate 100 as well as the plurality of routing lines 410 . This edge coating layer can prevent corrosion of each of the plurality of routing lines 410 made of a metal material or an electrical short between the plurality of routing lines 410 . In addition, the edge coating layer may prevent or minimize reflection of external light by the plurality of routing lines 410 and the first pads of the first pad unit 110 . The edge coating layer according to an embodiment may be made of a light blocking material including black ink. For example, the edge coating layer may be formed to surround all the outer surfaces OS of the substrate 100 . For example, the edge coating layer may be an edge protective layer or an edge insulating layer.

The light emitting display device according to the exemplary embodiment of the present specification may further include a driving circuit unit 500 .

The driving circuit unit 500 drives (or emits light) the pixels P disposed on the substrate 100 based on digital image data and a synchronization signal supplied from the display driving system to display an image corresponding to the image data on the display unit ( AA) can be indicated. The driving circuit unit 500 is connected to at least one third pad unit 230 disposed on the rear surface 100b of the substrate 100 , and drives (or emits light) the pixels P disposed on the substrate 100 . ), a gate control signal and driving power may be output to the at least one third pad unit 230 .

The driving circuit unit 500 according to an embodiment may include a flexible circuit film 510 , a driving integrated circuit 530 , a printed circuit board 550 , a timing controller 570 , and a power circuit unit 590 .

The flexible circuit film 510 may be connected to at least one third pad unit 230 disposed on the rear surface 100b of the substrate 100 .

The driving integrated circuit 530 is mounted on the flexible circuit film 510 . The driving integrated circuit 530 may receive sub-pixel data and a data control signal provided from the timing controller 570 , convert the sub-pixel data into an analog data signal according to the data control signal, and output the converted data. The data signal may be supplied to the third data pads disposed on the at least one third pad unit 230 through the flexible circuit film 510 .

The driving integrated circuit 530 senses a characteristic value of a driving TFT disposed in each sub-pixel SP through each of a plurality of reference voltage lines (or pixel sensing lines) disposed on the substrate 100 , and each sub-pixel Sensing raw data for each sub-pixel corresponding to the sensing value may be generated and provided to the timing controller 570 .

The printed circuit board 550 may be connected to the other edge portion of the flexible circuit film 510 . The printed circuit board 550 serves to transfer signals and power between components of the driving circuit unit 500 .

The timing controller 570 is mounted on the printed circuit board 550 and receives digital image data and a timing synchronization signal provided from the display driving system through a user connector disposed on the printed circuit board 550 . Alternatively, the timing controller 570 may not be mounted on the printed circuit board 550 but may be implemented on the display driving system or mounted on a separate control board connected between the printed circuit board 550 and the display driving system.

The timing controller 570 generates pixel data by aligning digital image data to fit a pixel arrangement structure disposed on the display unit AA based on the timing synchronization signal, and provides the generated pixel data to the driving integrated circuit 530 . do.

The timing controller 570 generates a data control signal and a gate control signal, respectively, based on the timing synchronization signal, controls the driving timing of the driving integrated circuit 530 through the data control signal, and controls the driving timing of the driving integrated circuit 530 through the gate control signal. 150) can control the driving timing. For example, the timing synchronization signal may include a vertical synchronization signal, a horizontal synchronization signal, a data enable signal, and a main clock (or dot clock).

The data control signal according to an embodiment may include a source start pulse, a source shift clock, and a source output signal. The data control signal may be supplied to the driving integrated circuit 530 via the flexible circuit film 510 .

The gate control signal according to an embodiment may include a start signal (or gate start pulse), a plurality of shift clocks, a forward driving signal, and a reverse driving signal. In this case, the plurality of shift clocks may include a plurality of scan clocks whose phases are sequentially shifted, and a plurality of carry clocks whose phases are sequentially shifted. Additionally, the gate control signal according to an embodiment may further include an external sensing line selection signal, an external sensing reset signal, and an external sensing control signal for sensing the characteristic value of the driving TFT disposed in the sub-pixel SP. . These gate control signals are the flexible circuit film 510 , at least one third pad unit 230 , the link line unit 250 , the second pad unit 210 , the routing unit 400 , and the first pad unit 110 . ), and may be supplied to the gate driving circuit 150 via the gate control lines GCL.

The timing controller 570 drives each of the driving integrated circuit 530 and the gate driving circuit 150 in an external sensing mode during a preset external sensing period, and receives the sensing raw data for each sub-pixel provided from the driving integrated circuit 530 . Based on the sub-pixel compensation data for compensating for a characteristic change of the driving TFT for each sub-pixel, compensation data for each sub-pixel may be generated, and the pixel data for each sub-pixel may be modulated based on the compensation data for each sub-pixel. For example, the timing controller 570 drives each of the driving integrated circuit 530 and the gate driving circuit 150 in the external sensing mode for each external sensing section corresponding to the blanking section (or vertical blanking section) of the vertical synchronization signal. can For example, the external sensing mode may be performed during an inspection process before product shipment of the light emitting display device, when the light emitting display device is initially driven, when the light emitting display device is powered on, and the light emitting display device is powered off. When the light emitting display device is powered off after driving for a long time, it may be performed in real time or during a blank period of a periodically set frame.

The timing controller 570 according to an embodiment stores the sensing raw data for each sub-pixel provided from the driving integrated circuit 530 in the storage circuit according to the external sensing mode. Also, in the display mode, the timing controller 570 may correct pixel data to be supplied to each sub-pixel SP based on the sensing raw data for each sub-pixel stored in the storage circuit and provide it to the driving integrated circuit 530 . . Here, the sensing raw data for each sub-pixel may include temporal change information of each of the driving TFT and the self-luminous device disposed in the sub-pixel. Accordingly, in the external sensing mode, the timing controller 570 senses a characteristic value (eg, a threshold voltage or mobility) of a driving TFT disposed in each sub-pixel, and based on this, a pixel to be supplied to each sub-pixel By correcting the data, it is possible to minimize or prevent deterioration of image quality due to deviation of characteristic values of driving TFTs disposed in sub-pixels. Since such an external sensing mode of the light emitting display device is a technology known by the applicant of the present specification, a detailed description thereof will be omitted. For example, the light emitting display device according to the present specification can transmit data to each sub-pixel through the sensing mode disclosed in Korean Patent Laid-Open No. 10-2016-0093179, 10-2017-0054654, or 10-2018-0002099. A characteristic value of the disposed driving TFT may be sensed.

The power circuit unit 590 is mounted on the printed circuit board 550, generates various power voltages necessary to display an image on the pixels P using input power supplied from the outside, and provides it to the corresponding circuit. . For example, the power circuit unit 590 may include a logic power voltage required for driving each of the timing controller 570 and the driving integrated circuit 530 , a plurality of reference gamma voltages provided to the driving integrated circuit 530 , and a gate driving circuit ( 150) may be generated and output at least one gate driving power supply and at least one gate common power supply required for driving. Also, the power circuit unit 590 may generate and output the pixel driving power and the pixel common voltage, but is not limited thereto. For example, the driving integrated circuit 530 may generate and output each of a pixel driving power and a pixel common voltage based on a plurality of reference gamma voltages.

FIG. 7 is a rear perspective view illustrating a light emitting display device according to another exemplary embodiment of the present specification, in which a wiring board is additionally configured in the light emitting display device shown in FIGS. 1 to 6 .

Referring to FIG. 7 , a light emitting display device according to another exemplary embodiment of the present specification may include a substrate 100 , a second substrate 200 , a coupling member 300 , and a routing unit 400 .

The substrate 100 may be expressed as a display substrate, a pixel array substrate, an upper substrate, a front substrate, or a base substrate. The substrate 100 may be a glass substrate, a bendable or bendable thin glass substrate, or a plastic substrate. In the following description of FIG. 7 , the substrate 100 will be referred to as a “first substrate 100”.

Since the first substrate 100 is substantially the same as the substrate 100 of the light emitting display device shown in FIGS. 1 to 6 , the same reference numerals are assigned thereto, and a redundant description thereof will be omitted.

The second substrate 200 may be expressed as a wiring substrate, a link substrate, a lower substrate, a rear substrate, or a link glass. The second substrate 200 may be a glass substrate, a bendable or bendable thin glass substrate, or a plastic substrate. For example, the second substrate 200 may be made of the same material as the first substrate 100 . The second substrate 200 may have the same size as the first substrate 100 , but is not limited thereto, and may have a size smaller than that of the first substrate 100 . For example, the second substrate 200 may preferably have the same size as the first substrate 100 in order to maintain or secure rigidity of the first substrate 100 .

The second substrate 200 may include a second pad unit 210 , at least one third pad unit 230 , and a link line unit 250 . The second pad part 210 , the at least one third pad part 230 , and the link line part 250 are respectively disposed on the rear surface (or rear surface) 200b of the second substrate 200 as shown in FIG. Since the second pad part 210, the at least one third pad part 230, and the link line part 250 are substantially identical to each other, the same reference numerals are assigned to them, and a redundant description thereof is omitted. do.

The second substrate 200 may be coupled to (or connected to) the second surface (or rear surface) of the first substrate 100 via the coupling member 300 . The coupling member 300 is interposed between the first substrate 100 and the second substrate 200 . Accordingly, the first substrate 100 and the second substrate 200 may be bonded to each other facing each other via the coupling member 300 .

The routing unit 400 may be expressed as a side routing unit or a printing line unit. The routing unit 400 is disposed to surround the outer surface OS1a of the first substrate 100 and the outer surface OS1b of the second substrate 200 . Routing unit 400 according to an embodiment of the first outer surface (or one side) of the outer surface (OS) of the first substrate 100 (OS1a) and the outer surface (OS) of the second substrate 200 of It may include a plurality of routing lines 410 disposed on each of the first outer surface (or one side) (OS1b). The routing unit 400 is a plurality of routing lines 410, respectively, the first pad portion 110 and the first outer surface (OS1a) of the first substrate 100, and the second pad of the second substrate 200 Since it is substantially the same as the routing unit 400 described in FIG. 6 except that it is disposed to surround the portion 210 and the first outer surface (OS1b), the same reference numerals are given for this, and the redundant description thereof is omit

The light emitting display device according to another exemplary embodiment of the present specification may further include a driving circuit unit 500 .

The driving circuit unit 500 may include a flexible circuit film 510 , a driving integrated circuit 530 , a printed circuit board 550 , a timing controller 570 , and a power circuit unit 590 . The driving circuit unit 500 is the driving circuit described with reference to FIG. 6 except that the flexible circuit film 510 is connected to at least one third pad unit 230 disposed on the rear surface 200b of the second substrate 200 . Since it is substantially the same as that of the circuit unit 500, the same reference numerals are assigned thereto, and a redundant description thereof is omitted.

8 is a cross-sectional view taken along line II-I' shown in FIG. 7 , FIG. 9 is an enlarged view of part 'B' shown in FIG. 8 , and FIG. 10 is a cross-sectional view taken along line II-II' shown in FIG. 7 . .

7 to 10 , the light emitting display device according to an exemplary embodiment of the present specification further includes a first substrate 100 , a second substrate 200 , a coupling member 300 , and a routing unit 400 . can do.

The first substrate 100 according to an embodiment includes a circuit layer 101 , a passivation layer (PAS), a planarization layer 102 , a light emitting device layer (EDL), a bank 103 , a barrier structure 104 , and a groove line. 105 , and an encapsulation layer 106 .

The circuit layer 101 may be disposed on the first substrate 100 . The circuit layer 101 may be expressed as a pixel array layer or a TFT array layer.

The circuit layer 101 according to an embodiment may include a buffer layer 101a and a circuit array layer 101b.

The buffer layer 101a serves to block diffusion of a material such as hydrogen contained in the first substrate 100 into the circuit array layer 101b during a high-temperature process during the TFT manufacturing process. Also, the buffer layer 101a may serve to prevent external moisture or moisture from penetrating toward the light emitting device layer EDL. The buffer layer 101a according to an embodiment has a single-layer structure of any one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride film (SiONx), a titanium oxide film (TiOx), and an aluminum oxide film (AlOx), or these It may include a stacked structure of, but is not necessarily limited thereto.

The circuit array layer 101b may include a pixel circuit PC having a driving TFT Tdr disposed in each pixel area PA on the buffer layer 101a.

The driving TFT Tdr disposed in the circuit area CA of each pixel area PA includes an active layer ACT, a gate insulating film GI, a gate electrode GE, an interlayer insulating layer 101c, and a first source/drain. It may include an electrode SD1 and a second source/drain electrode SD2 .

The active layer ACT may be disposed on the buffer layer 101a on each pixel area PA. The active layer ACT may include a channel region overlapping the gate electrode GE, and first source/drain regions and second source/drain regions parallel to each other with the channel region interposed therebetween. The active layer ACT may be used as a bridge line of a jumping structure that directly connects lines in the display area AA or electrically connects lines disposed in different layers by being conductive through a conducting process.

The gate insulating layer GI may be disposed on the channel region of the active layer ACT. The gate insulating layer GI may insulate the active layer ACT from the gate electrode GE.

The gate electrode GE may be disposed on the gate insulating layer GI and may be connected to the gate line GL. The gate electrode GE may overlap the channel region of the active layer ACT with the gate insulating layer GI interposed therebetween.

The interlayer insulating layer 101c may be disposed on the first substrate 100 to cover the gate electrode GE and the active layer ACT. The interlayer insulating layer 101c may electrically insulate (or separate) the gate electrode GE and the source/drain electrodes SD1 and SD2 .

The interlayer insulating layer 101c according to an embodiment may be made of an inorganic insulating material. For example, the interlayer insulating layer 101c may have a single layer structure of any one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride film (SiONx), a titanium oxide film (TiOx), and an aluminum oxide film (AlOx); These may include a laminated structure. For example, the interlayer insulating layer 101c may be expressed in terms of an insulating layer, an intermediate insulating layer, an inorganic insulating layer, a first inorganic insulating layer, or a first insulating layer.

The first source/drain electrode SD1 is disposed on the interlayer insulating layer 101c overlapping the first source/drain region of the active layer ACL, and a first source/drain contact disposed on the interlayer insulating layer 101c. It may be electrically connected to the first source/drain region of the active layer ACL through the hole. For example, the first source/drain electrode SD1 may be a source electrode of the driving TFT Tdr, and the first source/drain region of the active layer ACL may be a source region.

The second source/drain electrode SD2 is disposed on the interlayer insulating layer 101c overlapping the second source/drain region of the active layer ACL, and a second source/drain contact disposed on the interlayer insulating layer 101c. It may be electrically connected to the second source/drain region of the active layer ACL through the hole. For example, the second source/drain electrode SD2 may be a drain electrode of the driving TFT Tdr, and the second source/drain region of the active layer ACL may be a drain region.

Since each of the first and second switching TFTs Tsw1 and Tsw2 constituting the pixel circuit PC is formed together with the driving TFT Tdr, a description thereof will be omitted.

The circuit layer 101 according to an embodiment may further include a lower metal layer BML disposed between the first substrate 100 and the buffer layer 101a.

The lower metal layer BML may include a light blocking pattern LSP disposed under the active layer ACT of the TFTs Tdr, Tsw1, and Tsw2 constituting the pixel circuit PC.

The light blocking pattern LSP may be disposed in an island shape between the first substrate 100 and the active layer ACT. The light blocking pattern LSP blocks light incident toward the active layer ACT through the first substrate 100 to minimize or prevent a change in the threshold voltage of the TFT due to external light. Optionally, the light blocking pattern LSP may serve as a lower gate electrode of the corresponding TFT by being electrically connected to the first source/drain electrode SD1 of the TFT. In this case, not only the characteristic change due to light but also the bias voltage Accordingly, it is possible to minimize or prevent a change in the threshold voltage of the TFT.

The lower metal layer BML may be used as a line arranged in parallel with each other among the gate line GL, the data line DL, the pixel driving power line PL, the pixel common voltage line, and the reference voltage line RL. For example, the lower metal layer BML is disposed in a direction parallel to the second direction Y among the pixel driving lines DL, GL, PL, CVL, RL, and GCL disposed on the first substrate 100 . lines can be used.

The passivation layer PAS may be disposed on the first substrate 100 to cover the pixel circuit PC including the driving TFT Tdr. The passivation layer PAS may cover the circuit layer 101 including the driving TFT Tdr disposed in each pixel area PA. For example, the passivation layer PAS may be disposed between the circuit layer 101 and the planarization layer 102 .

The passivation layer PAS according to an embodiment may be formed of an inorganic insulating material. For example, the passivation layer (PAS) may have a single layer structure of any one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride film (SiONx), a titanium oxide film (TiOx), and an aluminum oxide film (AlOx), or these may include a stacked structure of For example, the passivation layer PAS may be expressed in terms of a protective layer, a circuit protective layer, a circuit insulating layer, an inorganic protective layer, a second inorganic insulating layer, or a second insulating layer.

The planarization layer 102 may be disposed on the first substrate 100 on which the passivation layer PAS is disposed, and may provide a flat surface on the passivation layer PAS. For example, the passivation layer PAS may be disposed between the interlayer insulating layer 101c and the planarization layer 102 .

The planarization layer 102 according to an exemplary embodiment may be formed to cover the remaining circuit layers 101 except for the passivation layer PAS disposed on the edge of the first substrate 100 . For example, the planarization layer 102 may be disposed between the first substrate 100 and the light emitting device layer EDL or between the passivation layer PAS and the light emitting device layer EDL. The planarization layer 102 according to an embodiment may be formed of an organic insulating material, but is not limited thereto. For example, the planarization layer 102 may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamides resin, or a polyimides resin, etc. may be made of an organic insulating material, but is not limited thereto.

The light emitting device layer EDL may be disposed on the planarization layer 102 . The light emitting device layer EDL according to an embodiment may include a pixel electrode PE, a self-emission device ED, and a common electrode CE.

The pixel electrode PE may be expressed as an anode electrode, a reflective electrode, a lower electrode, or a first electrode of the self-emission device ED.

The pixel electrode PE may be disposed on the planarization layer 103 overlapping the emission area EA of each sub-pixel SP on the first substrate 100 . The pixel electrode PE may be patterned in an island shape and disposed in each sub-pixel SP, and may be electrically connected to the first source/drain electrode SD1 of the driving TFT Tdr of the corresponding pixel circuit PC. . For example, one side of the pixel electrode PE extends on the first source/drain electrode SD1 of the driving TFT Tdr and passes through the electrode contact hole ECH provided in the planarization layer 103 to the driving TFT ( Tdr) may be electrically connected to the first source/drain electrode SD1.

The pixel electrode PE may include, but is not limited to, a metal material having a low work function and excellent reflection efficiency.

The pixel electrode PE according to an embodiment may have a two-layer structure including a first pixel electrode layer (or a first metal layer) and a second pixel electrode layer (or a second metal layer). The first and second pixel electrode layers may be sequentially deposited on the planarization layer 102 and then patterned simultaneously.

The first pixel electrode layer may be disposed on the planarization layer 102 . The second pixel electrode layer may be disposed (or laminated) on the first pixel electrode layer. For example, the first pixel electrode layer may serve as an adhesive layer with the planarization layer 102 and as an auxiliary electrode of the self-luminous device ED, and may be made of an ITO material or an IZO material, but is not limited thereto. . For example, the second pixel electrode layer may serve as a reflector and reduce resistance of the pixel electrode PE, and may include aluminum (Al), silver (Ag), molybdenum (Mo), titanium (Ti), and It may be made of one of molybdenum titanium alloy (MoTi), but is not limited thereto. For example, the pixel electrode PE may have a two-layer structure of ITO/MoTi or a two-layer structure of MoTi/ITO.

The pixel electrode PE according to another embodiment has a three-layer structure of IZO/MoTi/ITO or ITO/MoTi/ITO, a four-layer structure of ITO/Cu/MoTi/ITO, and a five-layer structure of ITO/MoTi/ITO/Ag/ITO. It may have a layer structure, but is not limited thereto.

The self-emission device ED may be disposed on the first substrate 100 . The self-emission device ED may be formed on the pixel electrode PE to directly contact the pixel electrode PE. The pixel electrode PE may be disposed between the self-emission device ED and the planarization layer 102 .

The self-emission device ED according to an exemplary embodiment may be a common layer commonly formed in each of the plurality of sub-pixels SP so as not to be divided into sub-pixels SP. The self-emission device ED may emit white light (or blue light) in response to a current flowing between the pixel electrode PE and the common electrode CE. The self-light emitting device ED according to an embodiment may include an organic light emitting device or a stacked or mixed structure of an organic light emitting device and a quantum dot light emitting device.

The organic light emitting device according to an embodiment may include two or more organic light emitting units for emitting white light (or blue light). For example, the organic light emitting device may include a first organic light emitting unit and a second organic light emitting unit for emitting white light by mixing the first light and the second light. Here, the first organic light-emitting unit may include at least one of a blue light-emitting layer, a green light-emitting layer, a red light-emitting layer, a yellow light-emitting layer, and a yellow-green light-emitting layer. The second organic light emitting unit is at least one for emitting a second light capable of producing white light by mixing with the first light emitted from the first organic light emitting unit among the blue light emitting layer, the green light emitting layer, the red light emitting layer, the yellow light emitting layer, and the yellow green light emitting layer may include a light emitting layer of

The organic light emitting diode according to an embodiment may further include at least one functional layer for improving luminous efficiency and/or lifespan. For example, the functional layer may be disposed above and/or below the light emitting layer, respectively.

The common electrode CE is disposed on the display unit AA of the first substrate 100 and is electrically connected to the self-luminous element ED of each of the plurality of pixels P. For example, the common electrode CE may be disposed on the remaining display portion AA except for an edge portion of the first substrate 100 .

The common electrode CE may be expressed as a cathode electrode, a transparent electrode, an upper electrode, a cathode, or a second electrode. The common electrode CE may be formed on the self-emission device ED and may be in direct contact with the self-emission device ED or may be in direct electrical contact with the self-emitting device ED. The common electrode CE may include a transparent conductive material so that light emitted from the self-emission device ED may be transmitted.

The common electrode CE according to an embodiment may be formed of a single-layer structure or a multi-layer structure of at least one of a transparent conductive material having a relatively high work function or graphene. For example, the common electrode CE may be formed of a metal oxide such as ITO or IZO, or a mixture of a metal and oxide such as ZnO:Al or SnO ₂ :Sb.

Additionally, the light emitting device layer EDL may further include a capping layer disposed on the common electrode CE. The capping layer may be disposed on the common electrode CE to adjust a refractive index of light emitted from the light emitting device layer EDL to improve light output efficiency.

The bank 103 may be disposed on the planarization layer 102 and define a pixel area on the first substrate 100 . The bank 103 may be disposed on the planarization layer 102 to cover an edge portion of the pixel electrode PE. The bank 103 may define a light emitting area (or opening) EA of each of the plurality of subpixels SP, and may electrically separate the pixel electrodes PE disposed in the adjacent subpixels SP. The bank 103 may be formed to cover the electrode contact hole ECH disposed in each pixel area PA. The bank 103 may be covered by the self-light emitting device ED of the light emitting device layer EDL. For example, the self-emission device ED may be disposed on the bank 103 as well as the pixel electrode PE of each of the plurality of sub-pixels SP.

The bank 103 according to an embodiment may be a transparent bank made of a transparent material or a black bank including a black pigment.

The barrier structure 104 may be disposed at an edge portion of the first substrate 100 or an edge portion of the outermost pixel Po. For example, the barrier structure 104 is included as a component of the outermost pixels Po disposed on the edge portion of the first substrate 100 , whereby the outermost pixels Po are included in the inner pixels. and may have a different structure.

The barrier structure 104 may be disposed on the circuit layer 101 at the edge of the first substrate 100 or the outermost pixel Po to have a closed loop line shape. For example, the barrier structure 104 may be disposed on the circuit layer 101 to have a closed-loop line shape surrounding the display unit AA and be supported by the interlayer insulating layer 101c of the circuit layer 101 . can For example, the barrier structure 104 may be implemented to separate the self-luminous device ED disposed on the edge of the first substrate 100 or the outermost pixels Po. The barrier structure 104 has a function of physically separating only the self-luminous element ED of the light emitting element layer EDL from the edge of the substrate 100 or the outermost pixels Po, and the organic encapsulation layer spreads or flows It may include a function of blocking overflow and a function of preventing penetration of moisture in the lateral direction of the substrate 100 . Such a barrier structure 104 will be described later.

The groove line 105 may be disposed in a groove region (or trench region) defined in an inner region of the barrier structure 104 . According to an embodiment, the groove line 105 may be disposed on the circuit layer 101 to have a closed loop line shape between the end of the planarization layer 102 and the barrier structure 104 . For example, the groove line 105 may be formed or implemented by removing both the planarization layer 102 and the passivation layer PAS disposed in the groove area of the inner area of the barrier structure 104 . For example, the groove line 105 may be implemented such that a portion of the interlayer insulating layer 101c disposed between the end of the planarization layer 102 and the barrier structure 104 is exposed. Also, the groove line 105 may be implemented to separate the self-luminous element ED disposed on the edge of the first substrate 100 or the outermost pixels Po.

The encapsulation layer 106 may be disposed on a portion other than the outermost edge portion of the first substrate 100 to cover the light emitting device layer EDL. The encapsulation layer 106 may be implemented on the first substrate 100 to surround both the front surface and the lateral surfaces of the light emitting device layer EDL. For example, the encapsulation layer 106 is implemented to surround both the front surface and the lateral surfaces of the light emitting device layer EDL, thereby preventing oxygen or moisture from penetrating into the light emitting device layer EDL. And, through this, the reliability of the light emitting device layer (EDL) by oxygen or moisture can be improved.

The encapsulation layer 106 according to an embodiment may include first to third encapsulation layers 106a, 106b, and 106c.

The first encapsulation layer 106a may be implemented to block oxygen or moisture from penetrating into the light emitting device layer EDL. The first encapsulation layer 106a may be disposed on the common electrode CE and surround the light emitting device layer EDL. Accordingly, both the front surface and the lateral surfaces of the light emitting device layer EDL may be surrounded by the first encapsulation layer 106a.

The first encapsulation layer 106a is a light emitting device layer (EDL) including a separation pattern of the self-emitting device ED disposed on the planarization layer 102 and the self-emitting device ED separated by the barrier structure 104 . ) can be encircled as a whole. The first encapsulation layer 106a according to an embodiment includes the end of the self-luminous device ED separated by the barrier structure 104 and the separation surface (or cut-off surface) of each of the separation patterns of the self-luminous device ED. It is completely enclosed or sealed, thereby fundamentally (or completely) preventing lateral moisture permeation. For example, the first encapsulation layer 106a may include the end of the self-luminous device ED separated by the barrier structure 104 and the circuit layer 101 disposed around each of the separation patterns of the self-luminous device ED. By sealing or sealing the boundary (or interface) between the separation surface (or cut surface) of the self-luminous element ED and the circuit layer 101 by directly contacting the top surface (or surface) of the self-luminous element ED, It is possible to block or prevent lateral moisture permeation through the boundary portion (or interface) between the separation surface (or cut surface) and the circuit layer 101 .

The first encapsulation layer 106a according to an embodiment may be a first inorganic encapsulation layer including an inorganic insulating material. For example, the first encapsulation layer 106a may have a single-layer structure of any one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride film (SiONx), a titanium oxide film (TiOx), and an aluminum oxide film (AlOx). Or it may include a stacked structure thereof.

The second encapsulation layer 106b may be implemented on the first encapsulation layer 106a of the encapsulation region defined by the barrier structure 104 to have a relatively larger thickness than the first encapsulation layer 106a. The second encapsulation layer 106b may have a thickness sufficient to cover foreign substances (or unnecessary materials or unnecessary structures) that are or may exist on the first encapsulation layer 106a. The second encapsulation layer 106b may spread to the edge portion of the substrate 100 due to its relatively large thickness, but the spread of the second encapsulation layer 106b may be blocked by the barrier structure 104 .

The second encapsulation layer 106b according to an embodiment may include an organic material or a liquid organic material. For example, the second encapsulation layer 106b may be formed of an organic material such as silicon oxycarbon (SiOCz) acrylic or epoxy-based resin. For example, the second encapsulation layer 106b may be expressed as a foreign material cover layer or an organic encapsulation layer.

According to an embodiment, the second encapsulation layer 106b may smoothly spread to the barrier structure 104 through the groove line 105 , and thereby the second encapsulation generated in an area adjacent to the inner side of the barrier structure 104 . The phenomenon of underfilling of the layer 106b can be prevented. For example, the spread of the second encapsulation layer 106b smoothly proceeds to the barrier structure 104 through the groove line 105 without being hindered by other structures, so that the second encapsulation layer 106b is formed by the barrier structure 104 . ) can be completely filled up to the area adjacent to the inner side.

According to an embodiment, instead of the groove line 105 , when an inner trench structure for separating the light emitting device layer EDL is disposed in the inner region of the barrier structure 104 , the second encapsulation layer 106b The spread is prevented or blocked by the height and step difference of the inner trench structure, so that it does not proceed to the barrier structure 104 . As a result, the non-filling phenomenon of the second encapsulation layer 106b in the area adjacent to the inner side of the barrier structure 104 is prevented. can occur.

The third encapsulation layer 106c may be implemented to primarily block penetration of oxygen or moisture into the light emitting device layer EDL. The third encapsulation layer 106c may be implemented to surround both the second encapsulation layer 106b disposed inside the barrier structure 104 and the first encapsulation layer 106a disposed outside the barrier structure 104 . have. The third encapsulation layer 106c according to an embodiment may include the same or different inorganic material as the first encapsulation layer 106a. According to one embodiment, the third encapsulation layer 106c is in direct contact with the top surface (or surface) of the circuit layer 101 around the end of the first encapsulation layer 106a and the circuit with the first encapsulation layer 106a. It is possible to further block or further prevent lateral moisture permeation through the boundary (or interface) between the layers 101 .

The light emitting display device or the first substrate 100 according to the exemplary embodiment of the present specification may include a first margin area MA1 , a second margin area MA2 , and a third margin area MA3 .

The first margin area MA1 may be disposed between the light emitting area EA of the outermost pixel P and the barrier structure 104 . The first margin area MA1 is based on the reliability margin of the light emitting device layer EDL due to the lateral permeation of moisture, the end of the light emitting area EA (or the bank 103) of the outermost pixel Po and the barrier It may have a first width between the structures 104 . Accordingly, the barrier structure 104 may be implemented to be spaced apart from the end of the light emitting area EA by the first margin area MA1 of the first width in the first direction X. For example, the first width may be set to 50 to 120 micrometers.

The second margin area MA2 may be disposed between the outer surface OS of the first substrate 100 and the barrier structure 104 . The second margin area MA2 has a second width between the outer surface OS of the first substrate 100 and the barrier structure 104 based on the reliability margin of the light emitting device layer EDL due to lateral permeation of moisture. can have Accordingly, the barrier structure 104 may be implemented to be spaced apart from the outer surface OS of the first substrate 100 by the second margin area MA2 of the second width in the first direction X. . For example, the second margin area MA2 may be an outermost edge portion of the first substrate 100 or an outermost edge portion of the outermost pixel Po, and includes the first pad portion 110 . can be For example, the second width may be set to 100 to 140 micrometers.

The third margin area MA3 may be disposed between the first margin area MA1 and the second margin area MA2 . The third margin area MA3 may have a third width corresponding to a width of the lowermost bottom surface (or lower surface) of the barrier structure 104 . For example, the third margin area MA3 may be an area including the barrier structure 104 . For example, the third width may be set to 30 to 60 micrometers.

The width of each of the first margin area MA1, the second margin area MA2, and the third margin area MA3 in the first direction X is the central portion of the outermost pixel Po and the first substrate ( The second distance D2 between the outer surfaces OS of 100 may be implemented to be less than or equal to half the pixel pitch.

3, 7, and 8 , the first substrate 100 according to an exemplary embodiment may further include a first pad unit 110 .

The first pad part 110 may be disposed on one edge portion of the first substrate 100 and may be electrically connected to the pixel driving lines DL, GL, PL, CVL, RL, and GCL one-to-one.

The first pad unit 110 according to an embodiment may include a plurality of first pads 111 disposed inside the circuit layer 101 .

The plurality of first pads 111 include first data pads DP, first gate pads GP, first pixel driving power pads PPP, first reference voltage pads RVP, and second It may be divided (or classified) into one pixel common voltage pads CVP.

Each of the plurality of first pads 111 is disposed on the interlayer insulating layer 101c and includes the pixel driving lines DL and GL through the pad contact hole PCH passing through the interlayer insulating layer 101c and the buffer layer 101a. , PL, CVL, RL, GCL) may be electrically connected to the corresponding line. Each of the plurality of first pads 111 according to an exemplary embodiment may be made of the same material as the pixel electrode PE, and may be formed together with the pixel electrode PE. Each of the plurality of first pads 111 according to another embodiment may be made of the same material as the source/drain electrodes of the TFT, and may be formed together with the source/drain electrodes of the TFT.

A portion of each of the plurality of first pads 111 may be exposed on the first substrate 100 through a pad open hole POH formed in the passivation layer PAS. For example, the pad open hole POH may be implemented by a pad open process of removing or opening a portion of the passivation layer PAS overlapping a portion of each of the plurality of first pads 111 .

8 and 10 , the light emitting display device or the first substrate 100 according to an exemplary embodiment of the present specification may further include a wavelength conversion layer 107 disposed on the encapsulation layer 106 .

The wavelength conversion layer 107 converts the wavelength of light incident from the emission area EA of each pixel area PA. For example, the wavelength conversion layer 107 converts white light (or blue light) incident from the light emitting area EA into color light corresponding to the subpixel SP or a color corresponding to the subpixel SP. Only light can pass through. For example, the wavelength conversion layer 107 may include at least one of a wavelength conversion member and a color filter layer.

The wavelength conversion layer 107 according to an embodiment may include a plurality of wavelength conversion members 107a and a protective layer 107b.

The plurality of wavelength conversion members 107a according to an embodiment may be disposed on the encapsulation layer 106 on the emission area EA of each subpixel SP. For example, the plurality of wavelength conversion members 107a may have the same size as or wider than the emission area EA of each subpixel SP.

The plurality of wavelength conversion members 107a according to an embodiment include a red color filter for converting white light into red light, a green color filter for converting white light into green light, and a blue color filter for converting white light into blue light. can be classified (or classified) as For example, the red color filter may be disposed on the encapsulation layer 106 on the emission area EA of the red subpixel SP, and the green color filter may be disposed on the emission area EA of the green subpixel SP. It may be disposed on the encapsulation layer 106 , and the blue color filter may be disposed on the encapsulation layer 106 on the emission area EA of the blue subpixel SP.

According to another example, the plurality of wavelength conversion members 107a may be disposed on the encapsulation layer 106 on each subpixel SP. For example, each of the plurality of wavelength conversion members 107a may be disposed on the encapsulation layer 106 to overlap the entire area of the corresponding subpixel SP.

According to another example, the plurality of wavelength conversion members 107a may overlap each other on the encapsulation layer 106 overlapping the circuit area CA (or the non-emission area) except for the light emitting area EA of each subpixel SP. can For example, on the encapsulation layer 106 overlapping the circuit area CA (or the non-emission area) excluding the light emitting area EA of each subpixel SP, two or more wavelength conversion members 107a having different colors ) can be placed. The two or more wavelength conversion members 107a disposed on the encapsulation layer 106 overlapping the circuit area CA (or the non-emission area) may block light to prevent color mixing between adjacent sub-pixels SP or adjacent pixels P. It can serve as a pattern.

The passivation layer 107b may be implemented to provide a flat surface on the wavelength conversion members 107a while covering the wavelength conversion members 107a. For example, the passivation layer 107b may be disposed to cover the wavelength conversion members 107a and the encapsulation layer 106 on which the wavelength conversion members 107a are not disposed. The passivation layer 107b according to an embodiment may include an organic material. Optionally, the protective layer 107b may further include a getter material capable of adsorbing moisture and/or oxygen.

Optionally, the wavelength conversion layer 107 according to an embodiment is formed on the encapsulation layer 106 overlapping the circuit area CA (or the non-emission area) except for the light emitting area EA in each subpixel SP. It may include two or more layers of wavelength conversion members 107a disposed in the light blocking pattern.

Alternatively, the wavelength conversion layer 107 may be changed to a wavelength conversion sheet having a sheet shape and disposed on the encapsulation layer 106 . In this case, the wavelength conversion sheet (or quantum dot sheet) may include wavelength conversion members 107a interposed between a pair of films. For example, when the wavelength conversion layer 107 includes quantum dots that re-emit color light set in the sub-pixel, the light-emitting element layer EDL of the sub-pixel SP may be implemented to emit white light or blue light. can

The light emitting display device or the first substrate 100 according to the exemplary embodiment of the present specification may further include a functional film 108 .

The functional film 108 may be disposed on the wavelength conversion layer 107 . For example, the functional film 108 may be coupled on the wavelength conversion layer 107 via a transparent adhesive member. The functional film 108 according to an embodiment may include at least one of an antireflection layer (or antireflection film), a barrier layer (or barrier film), a touch sensing layer, and a light path control layer (or light path control film). can

The anti-reflection layer may include a circularly polarizing layer (or circularly polarizing film) that blocks reflected light that is reflected by the TFT and/or pixel driving lines disposed on the first substrate 100 and propagates to the outside again.

The barrier layer may be made of a material having a low water vapor permeability, for example, a polymer material to primarily prevent penetration of moisture or oxygen.

Since the touch sensing layer includes a touch electrode layer based on a mutual capacitance method or a self-capacitance method, touch data corresponding to a user's touch may be output through the touch electrode layer.

Since the light path control layer includes a structure in which high refractive index layers and low refractive index layers are alternately stacked, a color shift phenomenon according to a viewing angle may be minimized by changing a path of light incident from each pixel P.

The light emitting display device or the first substrate 100 according to the exemplary embodiment of the present specification may further include a side sealing member 109 .

The side sealing member 109 is formed between the first substrate 100 and the functional film 108 , and may cover both sides of each of the circuit layer 101 and the wavelength conversion layer 107 . For example, the side sealing member 109 seals both sides of each of the circuit layer 101 and the wavelength conversion layer 107 exposed to the outside of the display device between the functional film 108 and the first substrate 100 . can be covered In addition, the side sealing member 109 may cover a portion of the routing unit 400 connected to the first pad unit 110 of the first substrate 100 . The side sealing member 109 may serve to prevent side light leakage due to light propagating toward the outer surface in the wavelength conversion layer 107 among the light emitted from the self-luminous element ED of each sub-pixel SP. can In particular, the side sealing member 109 overlapping the first pad part 110 of the first substrate 100 prevents reflection of external light by the first pad 111 disposed on the first pad part 110 or can play a role in minimizing

Optionally, the side sealing member 109 may further include a getter material capable of adsorbing moisture and/or oxygen.

In the light emitting display device according to the exemplary embodiment of the present specification, the first substrate 100 further includes a first chamfer 100c formed in a corner portion between the first surface 100a and the outer surface OS. can do. The first chamfer 100c prevents breakage of the routing part 400 along the edge of the first substrate 100 while minimizing damage to the edge of the first substrate 100 due to a physical impact from the outside. can play a role. For example, the first chamfer may have a 45 degree angle, but is not limited thereto. The first chamfer 100c may be implemented by a cutting wheel, a polishing wheel, or a chamfering process using a laser. Accordingly, the outer surfaces of the pad electrodes 111 of the first pad unit 110 disposed to be in contact with the first chamfer 100c are removed or polished together with the edge portion of the first substrate 100 by a chamfering process. As a result, the inclined surface inclined at an angle corresponding to the angle of the first chamfer 100c may be included. For example, when the first chamfer 100c is formed at an angle of 45 degrees between the first surface 100a and the outer surface OS of the first substrate 100 , the pad electrode of the first pad part 110 . The outer surface (or one end) of the poles 111 may also be formed at a 45 degree angle.

7, 8, and 10 , the second substrate 200 according to an exemplary embodiment of the present specification includes a second pad unit 210 and at least one third pad unit, as described with reference to FIG. 7 . Since it may include the 230 and the link line unit 250 , a redundant description thereof will be omitted or simplified.

The second substrate 200 according to an embodiment may include a metal pattern layer and an insulating layer insulating the metal pattern layer.

The metal pattern layer (or conductive pattern layer) may include a plurality of metal layers. The metal pattern layer according to an embodiment may include a first metal layer 201 , a second metal layer 203 , and a third metal layer 205 . The insulating layer may include a plurality of insulating layers. For example, the back insulating layer may include a first insulating layer 202 , a second insulating layer 204 , and a third insulating layer 206 . The insulating layer may be expressed as a back insulating layer or a pattern insulating layer.

The first metal layer 201 may be implemented on the rear surface 200b of the second substrate 200 . The first metal layer 201 according to an embodiment may include a first metal pattern. For example, the first metal layer 201 may be expressed as a first link layer or a link line layer.

The first metal pattern according to an embodiment may have a two-layer structure (Cu/MoTi) of copper (Cu) and a molybdenum titanium alloy (MoTi). Since this first metal pattern may be used as the link lines of the link line unit 250 , a redundant description thereof will be omitted.

The first insulating layer 202 may be implemented on the rear surface 200b of the second substrate 200 to cover the first metal layer 201 . The first insulating layer 202 according to an embodiment may be made of an inorganic insulating material.

The second metal layer 203 may be implemented on the first insulating layer 202 . The second metal layer 203 according to an embodiment may include a second metal pattern. For example, the second metal layer 203 may be expressed as a second link layer, a jumping line layer, or a bridge line layer.

The second metal pattern according to an embodiment may have a two-layer structure (Cu/MoTi) of copper (Cu) and a molybdenum titanium alloy (MoTi). The second metal pattern may be used as gate link lines among the link lines of the link line unit 250 , but is not limited thereto. For example, the second metal layer 203 may be used as a jumping line (or a bridge line) for electrically connecting link lines made of different layers or different metal materials in the link line unit 250 .

Optionally, a link line (eg, a plurality of first link lines) disposed on the second metal layer 203 is disposed on the first metal layer 201 and a link line disposed on the first metal layer 201 (eg, a link line disposed on the first metal layer 201 ) For example, the plurality of second link lines) may be changed to be disposed on the second metal layer 203 .

The second insulating layer 204 may be implemented on the rear surface 200b of the second substrate 200 to cover the second metal layer 203 . The second insulating layer 204 according to an embodiment may be made of an inorganic insulating material.

The third metal layer 205 may be implemented on the second insulating layer 204 . The third metal layer 205 according to an embodiment may include a third metal pattern. For example, the third metal layer 205 may be expressed as a third link layer or a pad electrode layer.

The third metal pattern according to an embodiment may have a stacked structure of at least two of ITO (or IZO), molybdenum (Mo), titanium (Ti), and molybdenum titanium alloy (MoTi). For example, the third metal pattern may have a three-layer structure of any one of ITO/Mo/ITO, ITO/MoTi/ITO, IZO/Mo/ITO, and IZO/MoTi/ITO. This third metal pattern may be used as pads of the second pad unit 210 . For example, the pads of the second pad unit 210 made of the third metal layer 205 are electrically connected to the first metal layer 201 through pad contact holes formed in the first and second insulating layers 202 and 204 . can be connected

The third insulating layer 206 may be implemented on the rear surface 200b of the second substrate 200 to cover the third metal layer 205 . The third insulating layer 206 according to an embodiment may be formed of an organic material. For example, the third insulating layer 206 may be made of an insulating material such as photo acryl. The third insulating layer 206 may cover the third metal layer 205 to prevent external exposure of the third metal layer 205 . The third insulating layer 206 may also be expressed as an organic insulating layer, a protective layer, a back protective layer, an organic protective layer, a back coating layer, or a back cover layer.

Each of the plurality of second pads disposed on the second pad part 210 may be connected to the rear surface 200b of the second substrate 200 through the second pad contact holes disposed on the first and second insulating layers 202 and 204 . It may be electrically connected to the link line of the link line unit 250 formed of the disposed first metal layer 201 or the second metal layer 203 . For example, the second data pad may electrically connect second pad contact holes disposed in the first and second insulating layers 202 and 204 to one end of the data link line.

The coupling member 300 according to the exemplary embodiment of the present specification is interposed between the first substrate 100 and the second substrate 200 . The first substrate 100 and the second substrate 200 may be bonded to each other to face each other via the coupling member 300 . The coupling member 300 according to an embodiment may be a transparent adhesive member including an optically clear adhesive (OCA) or an optically clear resin (OCR), or a double-sided tape. The coupling member 300 according to another example may include glass fibers.

The coupling member 300 according to an embodiment may be disposed in the entire space between the first substrate 100 and the second substrate 200 . For example, the entire second surface 100b of the first substrate 100 may be coupled to the entire surface of the coupling member 300 , and the entire front surface 200a of the second substrate 200 may be coupled to the coupling member 300 . ) can be combined with the entire other surface.

The coupling member 300 according to another example may be disposed between the first substrate 100 and the second substrate 200 in a patterned structure. For example, the coupling member 300 may have a line pattern structure or a mesh pattern structure. The mesh pattern structure may further include a vent part through which air bubbles generated between the first substrate 100 and the second substrate 200 can be discharged to the outside when the first substrate 100 and the second substrate 200 are bonded. can

Routing unit 400 according to an embodiment of the present specification is a plurality of routing that electrically connects the first pads 111 of the first pad unit 110 and the second pads of the second pad unit 210 one-to-one. It includes the line 410, which is the same as the plurality of routing lines 410 described with reference to FIG. 7, and thus a redundant description thereof will be omitted.

The light emitting display device or routing unit 400 according to an embodiment of the present specification may further include an edge coating layer 430 .

The edge coating layer 430 may be implemented to cover the routing unit 400 . The edge coating layer 430 may be implemented to cover the plurality of routing lines 410 . For example, the edge coating layer may be an edge protective layer or an edge insulating layer.

The edge coating layer 430 according to an embodiment includes a plurality of routing lines 410 as well as a first edge portion and a first outer surface OS1a of the first substrate 100 , and a first of the second substrate 200 . It may be implemented to cover the edge portion and the entire first outer surface OS1b. The edge coating layer 430 may prevent corrosion of each of the plurality of routing lines 410 made of a metal material or an electrical short between the plurality of routing lines 410 . In addition, the edge coating layer 430 may prevent or minimize the reflection of external light by the plurality of routing lines 410 and the first pads 111 of the first pad unit 110 . As an embodiment, the edge coating layer 430 may be formed of a light blocking material including black ink. As another example, the edge coating layer 430 implements (or configures) the outermost side (or sidewall) of the display device (or display panel), and thus the first and second substrates 100 and 200 by external impact. In order to prevent damage to the side OS, a shock absorbing material (or material) or a soft material may be included. As another example, the edge coating layer 430 may include a mixed material of a light blocking material and a shock absorbing material.

According to an embodiment, the edge coating layer 430 may be formed to surround one side outer surface OS of each of the first and second substrates 100 and 200 on which the routing unit 400 is disposed.

According to another embodiment, the edge coating layer 430 is, as shown in FIGS. 7, 8, and 10, the routing unit 400 is disposed on one side of the first and second substrates 100 and 200, respectively. It may be formed to surround all of the other outer surfaces OS as well as the outer surface OS. For example, it may be formed to surround all the outer surfaces OS of each of the first and second substrates 100 and 200 . In this case, one side outer surface (OS) (or the first outer surface) of each of the first and second substrates 100 and 200 may be surrounded by a plurality of routing lines 410 and the edge coating layer 430 . The other outer surfaces OS (or the second to fourth outer surfaces) except for one outer surface OS of each of the first and second substrates 100 and 200 may be surrounded only by the edge coating layer 430 . . For example, the first outer surface of each of the first and second substrates 100 and 200 includes a plurality of routing lines 410 and an edge coating layer 430 , and the first and second substrates 100 and 200 , respectively. Each of the second to fourth outer surfaces other than the first outer surface may include only the edge coating layer 430 .

According to an embodiment, the plurality of routing lines 410 and the edge coating layer 430 disposed on the first outer surface are referred to as a first sidewall structure, and the edge coating layer 430 disposed on the second to fourth outer surfaces. When referring to the second sidewall structure, the first sidewall structure and the second sidewall structure may have different thicknesses (or widths). For example, the thickness (or width) of the second sidewall structure may be thinner or narrower than the thickness (or width) of the first sidewall structure by a thickness of the plurality of routing lines 410 .

11 is an enlarged view of part 'C' shown in FIG. 8 , which is a view for explaining the barrier structure and groove line shown in FIGS. 8 and 9 .

8 , 10 , 11 , and 12 , the barrier structure 104 according to an exemplary embodiment of the present specification includes the first substrate 100 or the third margin area MA3 of the outermost pixel Po. ) may be disposed on the circuit layer 101 . The barrier structure 104 may serve to isolate (or disconnect) only the self-luminous element ED of the light emitting element layer EDL, and furthermore, the second encapsulation layer 106b (or organic material) of the encapsulation layer 106 . encapsulation layer) may serve as blocking the spread or overflow.

The barrier structure 104 according to an embodiment of the present specification may include a base structure 104a , an intermediate structure 104b , and a cliff structure 104c .

The base structure 104a may be disposed on the circuit layer 101 of the first substrate 100 or the third margin area MA3 of the outermost pixel Po. For example, the base structure 104a may be expressed as a first barrier structure, a first barrier pattern, or a lower barrier pattern.

The base structure 104a according to an embodiment may be formed of an inorganic insulating material. For example, the base structure 104a may be formed of the same material as the passivation layer PAS. The base structure 104a may be implemented as a single-layer structure of the passivation layer PAS. In this case, the base structure 104a is not patterned (or removed) by the patterning process of the passivation layer PAS disposed on the interlayer insulating layer 101c of the third margin area MA3, and the third margin area ( MA3) may be formed or implemented by a portion (or a non-patterning region) of the passivation layer PAS remaining as it is.

The side surface of the base structure 104a according to an embodiment may be implemented as an inclined structure or a normal taper structure. The lower surface of the base structure 104a may be in direct contact with the upper surface (or surface) of the interlayer insulating layer 101c, and the upper surface of the base structure 104a is disposed on the lower surface of the base structure 104a, and is narrower than the lower surface. can have a width. The side surface of the base structure 104a may be formed to be inclined between the upper surface and the lower surface. In the base structure 104a, the angle between the lower surface and the side surface may be an acute angle, and the angle between the upper surface and the side surface may be an obtuse angle. For example, the cross-section of the base structure 104a cut along the width direction may have a trapezoidal cross-sectional structure in which the upper side is narrower than the lower side.

The intermediate structure 104b may be disposed on the base structure 104a. For example, the intermediate structure 104b may be expressed as a second barrier structure, a second barrier pattern, or an intermediate barrier pattern.

The intermediate structure 104b according to an exemplary embodiment may be formed of an organic insulating material. For example, the intermediate structure 104b may be made of the same material as the planarization layer 102 . For example, the intermediate structure 104b may have the same height (or thickness) as the planarization layer 102 , or may have a lower height than the planarization layer 102 . This intermediate structure 104b is not patterned (or removed) by the patterning process of the planarization layer 102 , but due to a portion (or non-patterned region) of the planarization layer 102 remaining on the base structure 104a. may be formed or implemented.

According to an embodiment, the lower surface of the intermediate structure 104b may directly contact the upper surface of the base structure 104a and may have a narrower width than the upper surface of the base structure 104a. The upper surface of the intermediate structure 104b may have a narrower width than the lower surface. The side surface of the intermediate structure 104b may be formed to be inclined between the upper surface and the lower surface. In the intermediate structure 104b, the angle between the lower surface and the side surface may be an acute angle, and the angle between the upper surface and the side surface may be an obtuse angle. Accordingly, the side surface of the intermediate structure 104b may be implemented as an inclined structure or a normal tapered structure. For example, the cross-section of the base structure 104a cut along the width direction may have a trapezoidal cross-sectional structure in which the upper side is narrower than the lower side.

The cliff structure 104c may be disposed on the intermediate structure 104b. For example, the cliff structure 104c may be expressed as a third barrier structure, a third barrier pattern, or an upper barrier pattern.

The cliff structure 104c according to an embodiment may include a polymer material, but is not limited thereto. For example, the cliff structure 104c may include, but is not limited to, a polyimide material. This cliff structure 104c is not patterned (or removed) by the patterning process of the polymer material disposed on the bank 103 , and a portion (or non-patterned region) of the polymer material remaining on the intermediate structure 104b. may be formed or implemented by

The cliff structure 104c may have a wider width than the intermediate structure 104b. Thereby, the cliff structure 104c may have an eaves structure with respect to the intermediate structure 104b.

According to one embodiment, the upper surface (or the upper surface) of the cliff structure 104c may have a width that is wider than the width of each of the base structure 104a and the intermediate structure 104b.

The side surface of the cliff structure 104c may be inclined from the top surface (or top surface) of the cliff structure 104c toward the side surface of the intermediate structure 104b. For example, a side surface of the cliff structure 104c may have a cliff structure with respect to a top surface (or an upper surface) of the cliff structure 104c. The angle between the upper surface of the cliff structure 104c and the side surface of the cliff structure 104c separates (or cuts off) only the self-luminous element ED among the light-emitting element layers EDL disposed on the barrier structure 104 , and a common It may be set within a range that does not separate the electrodes CE. For example, the self-luminous device ED disposed on the barrier structure 104 may be separated by the cliff structure 104c. On the other hand, the common electrode CE disposed on the barrier structure 104 may not be separated by the cliff structure 104c and may be continuously formed to have a shape that follows the shape of the cliff structure 104c. have.

According to an embodiment, a side surface of the intermediate structure 104b may have an under cut structure with respect to the cliff structure 104c. For example, the barrier structure 104 may include an undercut region disposed on the side of the intermediate structure 104b. Since this undercut region is disposed under the upper surface of the cliff structure 104c, it may be planarly covered by the upper surface of the cliff structure 104c. For example, the top surface of the cliff structure 104c may cover both the base structure 104a, the intermediate structure 104b, and the sides of each of the cliff structures 104c from above. Accordingly, the side surface of the cliff structure 104c and the side surface of the intermediate structure 104b is an isolation structure for isolating (or disconnecting) only the self-luminous element ED of the light emitting element layer EDL disposed on the barrier structure 104 . (or a disconnected structure).

The groove line 105 according to an exemplary embodiment of the present specification may be disposed or formed to have a closed loop line shape in the first margin area MA1 of the first substrate 100 or the outermost pixel Po.

The groove line 105 according to an embodiment includes a passivation layer (PAS), a planarization layer 102 , and a pixel electrode disposed on the interlayer insulating layer 101c between the barrier structure 104 and the side surfaces of the planarization layer 102 . The material layer and the single structure or the multi-layer structure including at least one of the bank 103 may be all removed. For example, the groove line 105 may be formed by patterning (or forming) the planarization layer 102 and the passivation layer PAS, which are disposed on the first substrate 100 or the first margin area MA1 of the outermost pixel Po. removed) can be formed or implemented. Accordingly, the groove line 105 may define the end of the planarization layer 102 and have a closed loop line shape surrounding the end of the planarization layer 102 .

According to an embodiment, the groove line 105 is formed by patterning (or removing) the passivation layer (PAS) and the planarization layer 102 on the interlayer insulating layer 101c to form the uppermost surface (or surface) may be exposed. For example, the groove line 105 is a primary groove line formed on the passivation layer PAS by the patterning process of the planarization layer 102 for forming the electrode contact hole ECH of the TFT, and the primary groove A secondary groove line formed on the interlayer insulating layer 101c by a patterning process of the passivation layer PAS disposed on the line may be included. The interlayer insulating layer 101c may be exposed between the end 102e of the planarization layer 102 and the barrier structure 104 by the groove line 105 to implement the bottom surface of the groove line 105 . For example, the groove line 105 may have a relatively wider width than that of the barrier structure 104 .

Each of the barrier structure 104 and the groove line 105 according to the exemplary embodiment of the present specification may be formed or implemented prior to the formation process of the self-luminous device ED.

According to an embodiment, the material layer of the self-luminous device ED disposed on the barrier structure 104 and the groove line 105 is a side structure (or a cliff structure) of the cliff structure 104c of the barrier structure 104 . can be automatically separated (or disconnected) during the deposition process by For example, since the deposition material of the self-luminous device ED has straightness, the side surfaces of the base structure 104a, the intermediate structure 104b, and the cliff structure 104c are covered by the top surface of the cliff structure 104c. separated from each side of the base structure 104a, the intermediate structure 104b, and the cliff structure 104c by being deposited on the interlayer insulating layer 101c around the outer periphery and the inner periphery of the barrier structure 104. or disconnected). Accordingly, the self-luminous device ED may be automatically separated (or disconnected) from the barrier structure 104 during the deposition process.

According to an embodiment, the common electrode CE of the self-luminous device layer EDL may be formed to surround the self-luminous device ED disposed on the first substrate 100 . For example, the common electrode CE may be formed to have a shape that follows the surface shape of the self-luminous device ED disposed on the first substrate 100 and the side shape of the barrier structure 104 as it is. For example, the common electrode CE includes a self-emission device ED disposed on the planarization layer 102 and the groove line 105 , and an island shape disposed on the barrier structure 104 . It may be formed to surround each of the isolation pattern EDa of the ED and the isolation pattern EDb of the self-light emitting device ED disposed in an island shape around the outer periphery of the barrier structure 104 .

According to an exemplary embodiment, the common electrode CE is in direct contact with the upper surface (or surface) of the interlayer insulating layer 101c in the separation region of the self-luminous element ED, thereby forming the self-luminous element ED and the self-emissive element pattern. A boundary portion between each of (EDa, EDb) and the interlayer insulating layer 101c may be sealed, and through this, the boundary portion between the self-luminous element ED and each of the self-luminous element patterns EDa, EDb and the interlayer insulating layer 101c The lateral moisture permeation WP propagating or propagating through the light emitting diode ED may be prevented or blocked by the direct contact region CEc between the interlayer insulating layer 101c and the common electrode CE in the separation region of the self-luminous element ED. For example, the common electrode CE disposed on the barrier structure 104 may include an isolation pattern EDa of the self-luminous device ED disposed in an island shape on the barrier structure 104 and the base structure 104a. and the intermediate structure 104b and the cliff structure 104c may be formed to completely cover each side. In addition, the common electrode CE is in direct contact with the interlayer insulating layer 101c between the first barrier structure 104a and the end of the self-luminous device ED, and the first barrier structure 104a and the self-luminous device ED are in direct contact with each other. It may be formed to directly contact the interlayer insulating layer 101c between the separation patterns EDb of the ED). Accordingly, the self-luminous elements (or the self-luminous elements (MA1, MA2, MA3) disposed on the edge of the first substrate 100 (or the outermost pixel Po) or in the first to third margin areas MA1, MA2, MA3 of the first substrate 100) ED, EDa, and EDb) may be completely surrounded or completely sealed by the common electrode CE in direct contact with the interlayer insulating layer 101c.

Accordingly, the common electrode CE disposed on the barrier structure 104 directly contacts the uppermost surface (or surface) of the interlayer insulating layer 101c exposed under the barrier structure 104 , thereby forming a lower surface of the barrier structure 104 . The lateral moisture permeation WP may be prevented or blocked through the boundary portion (or interface) between the self-luminous elements ED, EDa, and EDb and the interlayer insulating layer 101c.

According to an embodiment, the first encapsulation layer 106a of the encapsulation layer 106 disposed on the self-light emitting device layer EDL may (or completely) surround the self-luminous device layer EDL as a whole (or completely) of the first substrate ( 100) may be disposed on. The end of the first encapsulation layer 106a is in direct contact with the top surface (or surface) of the passivation layer PAS so as to surround the end of the common electrode CE, and thus the boundary between the common electrode CE and the passivation layer PAS. (or interface) can prevent or block lateral moisture permeation (WP).

According to an embodiment, the second encapsulation layer 106b (or organic encapsulation layer) is disposed in the encapsulation region defined on the first encapsulation layer 106a on the self-luminous device layer EDL by the barrier structure 104 . The silver may spread toward the groove line 105 surrounding the side surface of the planarization layer 102 , and may entirely surround the light emitting device layer EDL disposed on the upper surface and the side surface of the planarization layer 102 . The spread of the second encapsulation layer 106b may smoothly proceed to the barrier structure 104 through the groove line 105 , whereby the second encapsulation layer 106b is completely spread to the area adjacent to the inner side of the barrier structure 104 . can be fully filled. In addition, the spread of the second encapsulation layer 106b may be finally blocked by the intermediate structure 104b and the cliff structure 104c of the barrier structure 104 , whereby the barrier structure 104 is protected from the second encapsulation layer. The overflow of (106b) can be blocked or prevented. Accordingly, the barrier structure 104 according to the exemplary embodiment of the present specification has a function of physically separating only the self-luminous element ED of the self-luminous element layer EDL, and the spreading or overflowing of the organic encapsulation layer 106b (over). flow), and a function of preventing penetration of moisture in the lateral direction of the first substrate 100 .

12 is a view showing the structure of the barrier structure shown in FIGS. 8, 10, and 11 .

11 and 12 , the barrier structure 104 according to an exemplary embodiment of the present specification physically separates only the self-luminous device ED of the light-emitting device layer EDL and a common electrode of the light-emitting device layer EDL. It may contain structures that do not separate (CE).

The barrier structure 104 according to an embodiment may include a base structure 104a , an intermediate structure 104b , and a cliff structure 104c .

The base structure 104a may have a trapezoidal cross-sectional structure on the interlayer insulating layer 101c in which the upper side is narrower than the lower side.

The intermediate structure 104b may be disposed on the base structure 104a.

According to an embodiment, the lower surface 104b1 of the intermediate structure 104b may have a first width Wa. For example, the lower surface 104b1 of the intermediate structure 104b may have a first width Wa in a range of 30 μm to 60 μm.

According to an embodiment, the upper surface 104b2 of the intermediate structure 104b may be disposed on the lower surface 104b1 and may have a narrower width than the lower surface 104b1 . In the intermediate structure 104b, a second width Wb may be formed between the end 104b1e of the lower surface 104b1 and the end 104b2e of the upper surface 104b2. For example, the second width Wb may have a range of 4 μm to 8 μm. For example, in the intermediate structure 104b, a ratio of the first width Wa to the second width Wb may be 8:1.

The cliff structure 104c may be disposed on the intermediate structure 104b. The cliff structure 104c may be formed to surround the upper surface 104b2 and the upper surface of the intermediate structure 104b.

The cliff structure 104c according to an embodiment may include a top surface 104c1 , a first side surface 104cs1 , and a second side surface 104cs2 .

The top surface 104c1 (or top surface) of the cliff structure 104c may have a wider width than each of the base structure 104a and the intermediate structure 104b.

The first side 104cs1 of the cliff structure 104c may be inclined from the top side 104c1 toward the side 104b2 of the intermediate structure 104b. According to an embodiment, the first side surface 104cs1 of the cliff structure 104c may be inclined by 30° or more and less than 90° from the upper surface 104c1. For example, the angle θ between the top surface 104c1 of the cliff structure 104c and the first side 104cs1 of the cliff structure 104c may be greater than 30° and less than 90° (30°< θ < 90°).

In the barrier structure 104 according to an embodiment, a third width Wc is formed between the upper surface 104c1 of the cliff structure 104c and the upper surface 104b2 and the upper end 104b2e of the intermediate structure 104b. can have For example, the third width Wc may have a range of 8 μm to 16 μm. For example, in the barrier structure 104 , a ratio of the first width Wa to the second width Wb and the third width Wc may be 8:1:2.

The second side surface 104cs2 of the cliff structure 104c may be inclined from the distal end of the first side surface 104cs1 toward the side surface 104b2 of the intermediate structure 104b.

As such, the self-luminous device ED formed on the barrier structure 104 according to an exemplary embodiment may be formed on the upper surface 104c1 of the cliff structure 104c, but the first side surface of the cliff structure 104c. (104cs1) is not deposited.

According to the deposition experimental example of the self-luminous device ED, when the angle θ between the upper surface 104c1 of the cliff structure 104c and the first side surface 104cs1 of the cliff structure 104c is 90° or more, the cliff structure It was confirmed that the self-luminous device ED was deposited on the first side surface 104cs1 of 104c. In addition, when the angle θ between the upper surface 104c1 of the cliff structure 104c and the first side surface 104cs1 of the cliff structure 104c is 30° or less, at the first side surface 104cs1 of the cliff structure 104c It was confirmed that not only the self-luminous element ED but also the common electrode CE were separated. On the other hand, when the angle θ between the upper surface 104c1 of the cliff structure 104c and the first side surface 104cs1 of the cliff structure 104c is greater than 30° and less than 90°, the second of the cliff structure 104c It was confirmed that only the self-emission element ED was separated from one side surface 104cs1 and the common electrode CE was not separated. Therefore, in order to physically separate only the self-luminous element ED without separating the common electrode CE of the light emitting element layer EDL, the upper surface 104c1 of the cliff structure 104c and the first surface of the cliff structure 104c The angle θ between the side surfaces 104cs1 is preferably set to be greater than 30° and smaller than 90°.

The barrier structure 104 according to the exemplary embodiment of the present specification may include a structure capable of preventing overflow of the organic encapsulation layer 106b of the encapsulation layer 106 .

According to an embodiment, the shortest distance between the barrier structure 104 and the planarization layer 103 is referred to as a first distance La, and the entire intermediate structure 104b and the cliff structure 104c of the barrier structure 104 are When the height is the second distance Lb, the ratio of the first distance La and the second distance Lb may be set in a range of 5:1 to 67:1.

According to an embodiment, the first distance La may be the shortest distance between the end 104b1e of the intermediate structure 104b and the end 103e of the planarization layer 103, and may have a range of 30 μm to 200 μm. . The second distance Lb may be the longest distance between the lower surface 104b1 of the intermediate structure 104b (or the upper surface of the base structure 104a) and the upper surface 104c1 of the cliff structure 104c, and ranges from 3 μm to 6 μm. can have

According to the application example of the organic encapsulation layer 106b, when the ratio of the first distance La and the second distance Lb is less than 5:1, the spread of the organic encapsulation layer 106b overflows the barrier structure 104 . It was confirmed that an overflow phenomenon occurred. In addition, when the ratio of the first distance La and the second distance Lb is greater than 67:1, an underflow phenomenon in which the organic encapsulation layer 106b does not reach the inside of the barrier structure 104 . It was confirmed that this occurred. On the other hand, when the ratio of the first distance La and the second distance Lb is 5:1 or more and 67:1 or less, the spread of the organic encapsulation layer 106b completely reaches the inside of the barrier structure 104 and the barrier structure It was confirmed that the overflow and underflow phenomena of the organic encapsulation layer 106b did not occur as it was prevented by (104). Accordingly, the ratio of the first distance La and the second distance Lb is 5:1 to 67:1 in order to prevent overflow and underflow of the organic encapsulation layer 106b. It is preferable to set the range of .

As described above, in the light emitting display device according to the exemplary embodiment of the present specification, the barrier structure 104 disposed on the edge of the first substrate 100 (or the outermost pixel) has a function of separating the self-luminous element ED and the organic light emitting diode. By including the function of preventing the spread or overflow of the encapsulation layer, and the function of preventing the penetration of moisture, a decrease in reliability of the self-luminous element (ED) due to side permeation can be prevented, and the barrier structure 104 is formed on the edge of the outermost pixels As a result of being disposed on the surface, it is possible to have an air bezel structure having no bezel area or a zeroed bezel while preventing a decrease in reliability of the self-light emitting device (ED) due to side permeation.

13 is another cross-sectional view taken along the line II-I' shown in FIG. 7, and FIG. 14 is another cross-sectional view taken along the line II-II' shown in FIG. 7, which shows the structure of the barrier structure shown in FIGS. 1 to 12. it has been changed Accordingly, in the following description, the same reference numerals are given to components other than the barrier structure and related components, and redundant descriptions thereof are omitted or simplified.

7, 13, and 14 , the barrier structure 104 according to another embodiment of the present specification includes a base structure 104a, an intermediate structure 104b, an auxiliary structure 104m, and a cliff structure 104c. ) may be included.

Since each of the base structure 104a and the intermediate structure 104b is substantially the same as each of the base structure 104a and the intermediate structure 104b described with reference to FIGS. 11 and 12 , a redundant description thereof will be omitted.

The auxiliary structure 104m may be disposed on the intermediate structure 104b. For example, the auxiliary structure 104m may be expressed as an auxiliary barrier structure or an auxiliary barrier pattern.

The auxiliary structure 104m according to an embodiment may have a width equal to or smaller than that of the upper surface of the intermediate structure 104b. The side surface of the auxiliary structure 104m may be implemented as an inclined structure or a normal tapered structure. For example, the auxiliary structure 104m cut along the width direction may have the same trapezoidal cross-sectional structure as the intermediate structure 104b.

The auxiliary structure 104m according to an embodiment may include an organic insulating material or an inorganic insulating material. For example, the auxiliary structure 104m may be stacked on the intermediate structure 104b with the same material as the bank 103 . The auxiliary structure 104m is not patterned (or removed) by the patterning process of the bank 103 and is formed by a portion (or non-patterned region) of the bank 103 remaining on the intermediate structure 104b as it is, or can be implemented. The auxiliary structure 104m may serve to increase the height of the barrier structure 104 .

The cliff structure 104c may be disposed on the auxiliary structure 104m. Since the cliff structure 104c is substantially the same as the cliff structure 104c described with reference to FIGS. 11 and 12 except for being disposed on the auxiliary structure 104m, a redundant description thereof will be omitted.

As described above, the light emitting display device including the barrier structure 104 according to another embodiment of the present specification may have the same effect as the light emitting display device shown in FIGS. As the structure 104m is added, overflow of the organic encapsulation layer can be prevented more reliably.

15 is another cross-sectional view taken along line II-I' shown in FIG. 7 , FIG. 16 is another cross-sectional view taken along line II-II' shown in FIG. 7 , and FIG. 17 is part 'D' shown in FIG. 15 . is an enlarged view of a modified structure of the barrier structure shown in FIGS. 1 to 13 . Accordingly, in the following description, the same reference numerals are given to the remaining components except for the barrier structure, the encapsulation layer, and related components, and overlapping descriptions thereof will be omitted or simplified.

7, 15, and 16 , the barrier structure 104 according to another embodiment of the present specification may include a base structure 104d and a cliff structure 104u.

Since the base structure 104d is substantially the same as the base structure 104a described with reference to FIGS. 11 and 12 , a redundant description thereof will be omitted.

The cliff structure 104u may be disposed on the base structure 104d. The cliff structure 104u may have a wider width than the base structure 104d. The lower surface of the cliff structure 104u may directly contact the upper surface of the base structure 104d.

The cliff structure 104u according to an embodiment may include a top surface 104u1 , a first side surface 104us1 , and a second side surface 104us2 .

The top surface 104u1 (or top surface) of the cliff structure 104u may have a wider width than the base structure 104d.

The first side 104us1 of the cliff structure 104u may be inclined from the top surface 104u1 toward the top surface of the base structure 104d. According to an embodiment, the first side surface 104us1 of the cliff structure 104u may be inclined by 30° or more and less than 90° from the upper surface 104u1. For example, the angle θ between the top surface 104u1 of the cliff structure 104u and the first side 104us1 of the cliff structure 104u may be greater than 30° and less than 90° (30° < θ < 90°). The angle θ between the top surface 104u1 of the cliff structure 104u and the first side surface 104us1 of the cliff structure 104u does not separate the common electrode CE of the light emitting device layer EDL and is a self-luminous device. It is preferably set to be greater than 30° and less than 90° so that only (ED) is physically separated. Since this is the same as the angle θ between the upper surface 104c1 of the cliff structure 104c and the first side surface 104cs1 of the cliff structure 104c, a description thereof will be omitted.

The second side surface 104us2 of the cliff structure 104u may be inclined toward the top surface of the base structure 104d.

According to an embodiment, the material layer of the self-luminous device ED disposed on the barrier structure 104 is automatically formed during the deposition process by the side structure (or the cliff structure) of the cliff structure 104u of the barrier structure 104 . can be separated (or cut off). For example, since the deposition material of the self-light emitting device ED has straightness, it is deposited on the upper surface 104u1 of the cliff structure 104u, but is covered by the upper surface 104u1 of the cliff structure 104u. Separation (or disconnection) from each side of the cliff structure 104u and the base structure 104d by being deposited on the interlayer insulating layer 101c around the outer periphery and the inner periphery of the barrier structure 104 instead of being deposited on the side surface of the barrier structure 104 ) can be Accordingly, the self-luminous device ED may be automatically separated (or disconnected) from the barrier structure 104 during the deposition process.

According to an embodiment, the common electrode CE of the self-luminous device layer EDL may be formed to surround the self-luminous device ED disposed on the first substrate 100 . For example, the common electrode CE may be formed to have a shape that follows the surface shape of the self-luminous device ED disposed on the first substrate 100 and the side shape of the barrier structure 104 as it is. For example, the common electrode CE includes a self-emission device ED disposed on the planarization layer 102 and the groove line 105 , and an island shape disposed on the barrier structure 104 . It may be formed to surround each of the isolation pattern EDa of the ED and the isolation pattern EDb of the self-light emitting device ED disposed in an island shape around the outer periphery of the barrier structure 104 .

According to an exemplary embodiment, the common electrode CE is in direct contact with the upper surface (or surface) of the interlayer insulating layer 101c in the separation region of the self-luminous element ED, thereby forming the self-luminous element ED and the self-emissive element pattern. A boundary portion between each of the (EDa, EDb) and the interlayer insulating layer 101c may be sealed, and through this, the boundary portion between the self-luminous element ED and each of the self-luminous element patterns EDa, EDb and the interlayer insulating layer 101c The lateral vapor transmission WP propagating or propagating through the light emitting diode ED may be prevented or blocked by the direct contact region CEc between the interlayer insulating layer 101c and the common electrode CE in the separation region of the self-luminous element ED. For example, the common electrode CE disposed on the barrier structure 104 includes an isolation pattern EDa of the self-luminous device ED disposed in an island shape on the barrier structure 104 and the cliff structure 104u. and the base structure 104d may be formed to completely cover each side surface. In addition, the common electrode CE is in direct contact with the interlayer insulating layer 101c between the base structure 104d and the end of the self-luminous device ED, and separates the base structure 104d from the self-luminous device ED. It may be formed to directly contact the interlayer insulating layer 101c between the patterns EDb. Accordingly, the self-emission devices (or the self-luminous elements (MA1, MA2, MA3) disposed on the edge of the first substrate 100 (or the outermost pixel Po) or in the first to third margin areas MA1, MA2, MA3 of the first substrate 100) ED, EDa, and EDb) may be completely surrounded or completely sealed by the common electrode CE in direct contact with the interlayer insulating layer 101c.

Accordingly, the common electrode CE disposed on the barrier structure 104 directly contacts the uppermost surface (or surface) of the interlayer insulating layer 101c exposed under the barrier structure 104 , thereby forming a lower surface of the barrier structure 104 . The lateral moisture permeation WP may be prevented or blocked through the boundary portion (or interface) between the self-luminous elements ED, EDa, and EDb and the interlayer insulating layer 101c.

According to an embodiment, the encapsulation layer 106 disposed on the self-luminous device layer EDL may be disposed on the first substrate 100 to completely (or completely) surround the self-luminous device layer EDL. .

The encapsulation layer 106 according to the present embodiment may be formed or implemented as a single layer made of only an inorganic insulating material. For example, the encapsulation layer 106 may have a single-layer structure of any one of a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride film (SiONx), a titanium oxide film (TiOx), and an aluminum oxide film (AlOx), or these may include a stacked structure of

According to an embodiment, the end of the encapsulation layer 106 is in direct contact with the top surface (or surface) of the passivation layer PAS so as to surround the end of the common electrode CE and the common electrode CE and the passivation layer PAS. ) through the boundary (or interface) between the side moisture permeation (WP) can be prevented or blocked.

Since the encapsulation layer 106 according to the present embodiment is formed of a single layer of an inorganic insulating material, the second encapsulation layer 106b and the third encapsulation layer 106c shown in FIGS. 8 to 14 may be omitted. For example, according to the present embodiment, the self-luminous element ED is primarily sealed by the common electrode CE and secondarily sealed by the encapsulation layer 106 , whereby the second encapsulation layer 106b ) and the third encapsulation layer 106c may be omitted.

As described above, the light emitting display device including the barrier structure 104 according to another embodiment of the present specification is the same as the light emitting display device shown in FIGS. 1 to 14 , the first substrate 100 (or the outermost pixel). ), the barrier structure 104 disposed at the edge includes a separation function of the self-luminous element ED and a function of preventing penetration of moisture, so that a decrease in reliability of the self-luminous element ED due to side permeation can be prevented, As the barrier structure 104 is disposed at the edge of the outermost pixels, a decrease in reliability of the self-light emitting device ED due to side permeation is prevented, and the barrier structure 104 may have an air bezel structure having no bezel area or a zeroed bezel.

18 is a view showing a multi-screen display device according to an embodiment of the present specification, and FIG. 19 is a cross-sectional view taken along line III-III' shown in FIG. 18 , which is the embodiment of the present specification shown in FIGS. 1 to 17 . A multi-screen display device implemented by tiling a light emitting display device according to an example is shown.

18 and 19 , a multi-screen display device (or a tiling light emitting display device) according to an embodiment of the present specification may include a plurality of display modules DM1 , DM2 , DM3 , and DM4 .

Each of the plurality of display modules DM1, DM2, DM3, and DM4 may display an individual image or divide and display one image. Each of the plurality of display modules (DM1, DM2, DM3, DM4) includes the light emitting display device according to the embodiment of the present specification shown in FIGS. 1 to 16 , and a redundant description thereof may be omitted. have.

Each of the plurality of display modules DM1 , DM2 , DM3 , and DM4 may be tiled in a separate tiling frame so that side surfaces thereof are in contact with each other. For example, each of the plurality of display modules DM1 , DM2 , DM3 , and DM4 may be tiled to have an N×M shape to implement a multi-screen display device having a large screen. For example, N may be a positive integer of 1 or more, and M may be a positive integer of 2 or more. For example, N may be a positive integer of 2 or more, and M may be a positive integer of 1 or more.

Each of the plurality of display modules DM1, DM2, DM3, and DM4 does not include a bezel area (or non-display area) surrounding the entire display unit AA on which an image is displayed, and the display unit AA is surrounded by air. It has an air-bezel structure. That is, in each of the plurality of display modules DM1 , DM2 , DM3 , and DM4 , the entire first surface of the first substrate 100 may be implemented as the display unit AA.

According to the present example, in each of the plurality of display modules DM1 , DM2 , DM3 , and DM4 , the second space between the center CP of the outermost pixel Po and the outermost outer surface VL of the first substrate 100 . The second interval D2 is implemented to be less than half of the first interval D1 (or pixel pitch) between adjacent pixels. Accordingly, in the two adjacent display modules DM1, DM2, DM3, and DM4 connected (or contacted) with each other along the first direction (X) and the second direction (Y) according to the side coupling method, the outermost adjacent The distance D2+D2 between the pixels Po is equal to or smaller than the first distance D1 between two adjacent pixels. Referring to FIG. 19 as an example, in the first display module DM1 and the third display module DM3 connected (or in contact) with each other in the second direction Y, the outermost pixel of the first display module DM1 The distance (D2+D2) between the center (CP) of (Po) and the center (CP) of the outermost pixel (Po) of the third display module (DM3) is the first display module (DM1) and the third display module ( DM3) may be equal to or smaller than the first distance D1 (or pixel pitch) between two adjacent pixels disposed in each.

Accordingly, the central portion of each of the outermost pixels Po of the two adjacent display modules DM1, DM2, DM3, and DM4 connected (or contacted) with each other in the first direction (X) and in the second direction (Y). CP) is equal to or smaller than the first distance D1 between two adjacent pixels disposed in each display module DM1, DM2, DM3, DM4, so that the two adjacent display modules DM1 , DM2, DM3, and DM4), there is no boundary or seam, and as a result, there is no dark area due to the boundary provided between the plurality of display modules DM1, DM2, DM3, and DM4. . As a result, the image displayed on the multi-screen display device in which each of the plurality of display modules DM1, DM2, DM3, and DM4 is tiled in an N×M shape is a boundary between the plurality of display modules DM1, DM2, DM3, and DM4. A part can be displayed continuously without a sense of disconnection (or discontinuity).

18 and 19 show that the plurality of display modules DM1, DM2, DM3, and DM4 are tiled in a 2×2 form, but the present invention is not limited thereto, and the plurality of display modules DM1, DM2, DM3, and DM4 are It may be tiled in an x×1 shape, a 1×y shape, or an x×y shape. Here, x and y may be two or more natural numbers equal to or different from each other.

As such, in the multi-screen display device according to the present specification, when a single image is displayed on the display unit AA of each of the plurality of display modules DM1, DM2, DM3, and DM4 on one screen, the plurality of display modules DM1 , DM2, DM3, DM4) can display continuous images without being cut off at the boundary, thereby improving the image immersion of viewers watching the images displayed on the multi-screen display device.

The light emitting display device and the multi-screen display device including the same according to the present specification may be described as follows.

A light emitting display device according to some embodiments of the present specification includes a substrate having a display unit, a circuit layer disposed on the display unit of the substrate, a planarization layer disposed on the circuit layer, and a planarization layer disposed along an edge portion of the substrate and surrounding the side surface of the planarization layer. includes a barrier structure, a planarization layer, a light emitting device layer including a self-luminous device and a common electrode disposed on the barrier structure, and an encapsulation layer disposed on the light emitting device layer, wherein the self-luminous device includes top and side surfaces of the barrier structure It is formed only on the upper middle surface, and the common electrode is continuously connected to the upper surface and the side surface of the barrier structure and may be in direct contact with a circuit layer disposed under the barrier structure.

According to some embodiments of the present specification, a barrier structure is formed on the base structure disposed on the circuit layer, the intermediate structure disposed on the base structure to have a width smaller than the base structure, and the intermediate structure to have a wider width than the intermediate structure. including a cliff structure disposed on the , wherein the self-luminous device is formed only on the upper surface of the upper surface and the side surface of the cliff structure, and the common electrode is formed to be continuously connected to the upper surface and the side surface of the cliff structure, the side surface of the intermediate structure, and the base structure, It may be in direct contact with a circuit layer disposed below the barrier structure.

According to some embodiments of the present specification, the encapsulation layer includes a first encapsulation layer surrounding the light emitting device layer and the barrier structure, and a second encapsulation disposed in an encapsulation region defined on the first encapsulation layer on the light emitting device layer by the barrier structure. layer, and a second encapsulation layer disposed on the second encapsulation layer and the first encapsulation layer disposed in an outer region of the barrier structure, wherein an end of the first encapsulation layer surrounds an end of the common electrode and is directly connected to the circuit layer and the spread of the second encapsulation layer may be blocked by the barrier structure.

According to some embodiments of the present specification, a barrier structure is formed on the base structure disposed on the circuit layer, the intermediate structure disposed on the base structure to have a width smaller than the base structure, and the intermediate structure to have a width smaller than the intermediate structure. and a cliff structure disposed on the auxiliary structure to have a wider width than the auxiliary structure, wherein the self-luminous device is formed only on the upper surface of the upper surface and side surfaces of the cliff structure, and the common electrode is formed on the upper surface of the cliff structure The side surface, the side surface of the auxiliary structure, the side surface of the intermediate structure, and the base structure are continuously formed and may be in direct contact with the circuit layer disposed under the barrier structure.

According to some embodiments of the present specification, the encapsulation layer includes a first encapsulation layer surrounding the light emitting device layer and the barrier structure, and a second encapsulation disposed in an encapsulation region defined on the first encapsulation layer on the light emitting device layer by the barrier structure. layer, and a second encapsulation layer disposed on the second encapsulation layer and the first encapsulation layer disposed in an outer region of the barrier structure, wherein an end of the first encapsulation layer surrounds an end of the common electrode and is directly connected to the circuit layer and the spread of the second encapsulation layer may be blocked by the barrier structure.

According to some embodiments of the present specification, the barrier structure includes a base structure disposed on the circuit layer, and a cliff structure disposed on the base structure to have a wider width than the base structure, wherein the self-luminous device is an upper surface of the cliff structure. It is formed only on the upper surface among the side surfaces and the common electrode is formed to be continuously connected to the upper surface and the side surface of the cliff structure, and may be in direct contact with the circuit layer disposed under the barrier structure.

According to some embodiments of the present specification, the encapsulation layer is made of a single layer of inorganic insulating material surrounding the light emitting device layer and the barrier structure, and the end of the encapsulation layer is to be in direct contact with the circuit layer while surrounding the end of the common electrode. can

According to some embodiments of the present specification, the angle between the top surface and the side surface of the cliff structure may be greater than 30° and less than 90°. According to some embodiments of the present specification, the underside of the intermediate structure has a first width, and in the intermediate structure, between the lower end and the upper end of the structure has a second width, and between the upper end of the cliff structure and the upper end of the intermediate structure. may have a third width, and a ratio of the first width, the second width, and the third width may be 8:1:2. According to some embodiments of the present specification, the shortest distance between the side surface of the intermediate structure and the planarization layer is a first distance, the longest distance between the bottom end of the intermediate structure and the top surface of the cliff structure is a second distance, the first distance and the second distance The ratio of the distance may be 5:1 to 67:1.

In a light emitting display device according to some embodiments of the present specification, a first pad part having a plurality of first pads disposed on one edge of a substrate and a second pad part having a plurality of second pads overlapping each of the plurality of first pads may be provided. A wiring board including a pad part, a coupling member interposed between the board and the wiring board, and a plurality of routing lines disposed on one side of each of the board and the wiring board and connecting the plurality of first pads and the plurality of second pads one-to-one It may further include a routing unit having a.

According to some embodiments of the present specification, the display unit includes a plurality of pixels arranged in a first direction and a second direction crossing the first direction on a substrate, and the center of the outermost pixels among the plurality of pixels and the substrate A distance between the outer surfaces may be less than or equal to half of a pixel pitch, and the pixel pitch may be a distance between centers of two adjacent pixels.

A multi-screen display device according to some embodiments of the present specification includes a plurality of display modules disposed along at least one of a first direction and a second direction crossing the first direction, and each of the plurality of display modules is a light emitting display A light emitting display device comprising: a substrate having a display portion; a circuit layer disposed on the display portion of the substrate; a planarization layer disposed on the circuit layer; and a barrier structure disposed along an edge portion of the substrate and surrounding a side surface of the planarization layer , a planarization layer, a light emitting device layer including a self-luminous device and a common electrode disposed on the barrier structure, and an encapsulation layer disposed on the light emitting device layer, wherein the self-luminous device is disposed only on the upper surface of the upper surface and the side surface of the barrier structure. The common electrode may be continuously formed on the upper surface and the side surface of the barrier structure, and may be in direct contact with a circuit layer disposed under the barrier structure.

According to some embodiments of the present specification, in the light emitting display device of each of the plurality of display modules, the display unit includes a plurality of pixels arranged in a first direction and a second direction crossing the first direction on a substrate, In the first display module and the second display module adjacent in the first direction and the second direction, the distance between the center of the outermost pixel of the first display module and the center of the outermost pixel of the second display module is equal to or less than the pixel pitch , and the pixel pitch may be a distance between centers of two adjacent pixels.

The light emitting display device according to the example of the present specification may be applied to all electronic devices including a display panel. For example, the light emitting display device according to the present specification may include a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, and a rollable device. (rollable device), bendable device (bendable device), flexible device (flexible device), curved device (curved device), electronic notebook, e-book, PMP (portable multimedia player), PDA (personal digital assistant), MP3 player , mobile medical device, desktop PC, laptop PC, netbook computer, workstation, navigation, vehicle navigation, vehicle display, television, wallpaper display , Shinage (signage) devices, game devices, laptops, monitors, cameras, camcorders, and home appliances may be applied.

Features, structures, effects, etc. described in various examples of the present specification are included in at least one example of the present specification, and are not necessarily limited to only one example. Furthermore, features, structures, effects, etc. illustrated in at least one example of the present specification can be combined or modified for other embodiments by those of ordinary skill in the art to which the technical spirit of the present specification pertains. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the technical scope or scope of the present specification.

The present specification described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which this specification belongs that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present specification. It will be clear to those who have the knowledge of Therefore, the scope of the present specification is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present specification.

10: light emitting display device 100: first substrate
101: circuit layer 102: planarization layer
104: barrier structures 104a, 104d: base structures
104b: intermediate structures 104c, 104u: cliff structures
104m: auxiliary structure 105: groove line
106: encapsulation layer 106a: first encapsulation layer
106b: second encapsulation layer 150: gate driving circuit
200: second substrate 300: coupling member
400: routing unit 500: driving circuit unit

Claims (20)

a substrate having a display unit;
a circuit layer disposed on the display unit of the substrate;
a planarization layer disposed on the circuit layer;
a barrier structure disposed along an edge of the substrate and surrounding a side surface of the planarization layer;
a light emitting device layer including a self-emitting device and a common electrode disposed on the planarization layer and the barrier structure; and
It includes an encapsulation layer disposed on the light emitting device layer,
The self-luminous element is formed only on the upper surface of the upper surface and the side surfaces of the barrier structure,
and the common electrode is continuously formed on top and side surfaces of the barrier structure and is in direct contact with the circuit layer disposed under the barrier structure. The method of claim 1,
The barrier structure is
a base structure disposed on the circuit layer;
an intermediate structure disposed on the base structure to have a smaller width than the base structure; and
and a cliff structure disposed on the intermediate structure to have a wider width than the intermediate structure,
The self-luminous element is formed only on the upper surface of the upper surface and the side surfaces of the cliff structure,
The common electrode is formed to be continuously connected to an upper surface and a side surface of the cliff structure, a side surface of the intermediate structure, and the base structure, and is in direct contact with the circuit layer disposed under the barrier structure. 3. The method of claim 2,
and an angle between the top surface and the side surface of the cliff structure is greater than 30° and less than 90°. 4. The method of claim 3,
The lower surface of the intermediate structure has a first width,
In the intermediate structure, between the end of the lower surface and the end of the upper surface has a second width,
Between the upper end of the cliff structure and the upper end of the intermediate structure has a third width,
and a ratio of the first width, the second width, and the third width is 8:1:2. 5. The method of claim 4,
The shortest distance between the side surface of the intermediate structure and the planarization layer is a first distance,
The longest distance between the lower end of the intermediate structure and the uppermost surface of the cliff structure is a second distance,
A ratio of the first distance to the second distance is 5:1 to 67:1. 3. The method of claim 2,
The encapsulation layer is
a first encapsulation layer surrounding the light emitting device layer and the barrier structure;
a second encapsulation layer disposed in an encapsulation region defined on the first encapsulation layer on the light emitting device layer by the barrier structure; and
a second encapsulation layer disposed on the second encapsulation layer and the first encapsulation layer disposed in an outer region of the barrier structure;
The end of the first encapsulation layer is in direct contact with the circuit layer while surrounding the end of the common electrode,
and spreading of the second encapsulation layer is blocked by the barrier structure. The method of claim 1,
The barrier structure is
a base structure disposed on the circuit layer;
an intermediate structure disposed on the base structure to have a smaller width than the base structure; and
an auxiliary structure disposed on the intermediate structure to have a width smaller than that of the intermediate structure; and
and a cliff structure disposed on the auxiliary structure to have a wider width than the auxiliary structure,
The self-luminous element is formed only on the upper surface of the upper surface and the side surfaces of the cliff structure,
The common electrode is formed to be continuously connected to an upper surface and a side surface of the cliff structure, a side surface of the auxiliary structure, a side surface of the intermediate structure, and the base structure, and is in direct contact with the circuit layer disposed under the barrier structure. , a light emitting display device. 8. The method of claim 7,
The encapsulation layer is
a first encapsulation layer surrounding the light emitting device layer and the barrier structure;
a second encapsulation layer disposed in an encapsulation region defined on the first encapsulation layer on the light emitting device layer by the barrier structure; and
a second encapsulation layer disposed on the second encapsulation layer and the first encapsulation layer disposed in an outer region of the barrier structure;
The end of the first encapsulation layer is in direct contact with the circuit layer while surrounding the end of the common electrode,
and the spread of the second encapsulation layer is blocked by the barrier structure. 8. The method of claim 7,
and an angle between the top surface and the side surface of the cliff structure is greater than 30° and less than 90°. 10. The method of claim 9,
The lower surface of the intermediate structure has a first width,
In the intermediate structure, between the end of the lower surface and the end of the upper surface has a second width,
Between the upper end of the cliff structure and the upper end of the intermediate structure has a third width,
and a ratio of the first width, the second width, and the third width is 8:1:2. 11. The method of claim 10,
The shortest distance between the side surface of the intermediate structure and the planarization layer is a first distance,
The longest distance between the lower end of the intermediate structure and the uppermost surface of the cliff structure is a second distance,
A ratio of the first distance to the second distance is 5:1 to 67:1. The method of claim 1,
The barrier structure is
a base structure disposed on the circuit layer; and
and a cliff structure disposed on the base structure to have a wider width than the base structure,
The self-luminous element is formed only on the upper surface of the upper surface and the side surfaces of the cliff structure,
The common electrode is formed to be continuously connected to an upper surface and a side surface of the cliff structure and is in direct contact with the circuit layer disposed under the barrier structure. 13. The method of claim 12,
The encapsulation layer is made of a single layer of inorganic insulating material surrounding the light emitting device layer and the barrier structure,
and an end of the encapsulation layer is in direct contact with the circuit layer while surrounding an end of the common electrode. 13. The method of claim 12,
and an angle between the top surface and the side surface of the cliff structure is greater than 30° and less than 90°. 15. The method of claim 14,
The lower surface of the intermediate structure has a first width,
In the intermediate structure, between the end of the lower surface and the end of the upper surface has a second width,
Between the upper end of the cliff structure and the upper end of the intermediate structure has a third width,
and a ratio of the first width, the second width, and the third width is 8:1:2. 16. The method of claim 15,
The shortest distance between the side surface of the intermediate structure and the planarization layer is a first distance,
The longest distance between the lower end of the intermediate structure and the uppermost surface of the cliff structure is a second distance,
The ratio of the first distance to the second distance is 5:1 to 67:1. The method of claim 1,
a first pad unit having a plurality of first pads disposed on one edge of the substrate;
a wiring board including a second pad unit having a plurality of second pads overlapping each of the plurality of first pads;
a coupling member interposed between the substrate and the wiring board; and
and a routing part disposed on one side of each of the substrate and the wiring board and having a plurality of routing lines connecting the plurality of first pads and the plurality of second pads one-to-one. 18. The method according to any one of claims 1 to 17,
The display unit includes a plurality of pixels arranged in a first direction and a second direction crossing the first direction on the substrate;
A distance between a center of the outermost pixels among the plurality of pixels and an outer surface of the substrate is less than or equal to half a pixel pitch, and the pixel pitch is a distance between centers of two adjacent pixels. a plurality of display modules disposed along at least one of a first direction and a second direction crossing the first direction;
A multi-screen display device, wherein each of the plurality of display modules includes the light emitting display device according to any one of claims 1 to 17. 20. The method of claim 19,
In the light emitting display device of each of the plurality of display modules, the display unit includes a plurality of pixels arranged on the substrate in a first direction and a second direction crossing the first direction,
In the first display module and the second display module adjacent in the first direction and the second direction, the distance between the center of the outermost pixel of the first display module and the center of the outermost pixel of the second display module is a pixel less than or equal to the pitch,
The pixel pitch is a distance between centers of two adjacent pixels.

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