KR20220074387A - UVC sensor using wide-bandgap perovskite nano materials and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a UVC sensor using a perovskite-structured nanomaterial having a wide bandgap and a method for manufacturing the same. More specifically, the present invention relates to a pin structure in which a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ used as an intrinsic layer, and an electron transport layer made of n-type nanoparticles are stacked in this order. It relates to a UVC sensor having a and a manufacturing method thereof.

Description

UVC sensor using wide-bandgap perovskite nano materials and method of manufacturing the same

The present invention relates to a UVC sensor using a perovskite-structured nanomaterial having a wide bandgap and a method for manufacturing the same. More specifically, the present invention relates to a pin structure in which a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ used as an intrinsic layer, and an electron transport layer made of n-type nanoparticles are stacked in this order. It relates to a UVC sensor having a and a manufacturing method thereof.

Although ultraviolet (UV) radiation accounts for less than 10% of the total sunlight, it has a great influence on the survival and development of mankind, and has remained as one of the most important components of existing solar radiation since its existence. Depending on the wavelength, UV radiation is generally divided into three regions: UVA (400 to 320 nm), UVB (320 to 280 nm) and UVC (280 to 100 nm), of which some of UVA and UVB penetrate the atmosphere and reach the ground. Since the UVC region does not exist naturally on the ground, it is called the Solar Blind band. UVC detection is widely used in various fields such as missile-plum warning, flame detection, and secure communication, and UVC radiation is strongly absorbed by biological materials and damages the DNA and RNA of microorganisms. It is also used as a strategy.

Light sensors are small, durable, inexpensive, and require solar blinds and high sensitivity. Currently, PMT (photomultiplier tube) and Si-based photodiodes are generally used as UV sensors. The Si-based photodiode requires an expensive visible light blocking filter to absorb only the UVC region due to its low photosensitivity and low bandgap (~1.12 eV). In the case of PMT, it is used together with high photosensitivity and a band pass filter, and it requires high cost, heat resistance, high operating voltage, etc., and has a problem related to miniaturization of the PMT because of its large volume. As a method for improving the performance of a UVC sensor using a photodiode, a pin structure device has been proposed to control carriers generated by light. In this case, for the active layer corresponding to the i-layer, a material having a wide bandgap should be used for selective absorption of UVC. However, when manufacturing a UVC sensor using a material with a wide bandgap, for example, diamond, β-Ga ₂ O ₃ , AlGaN, etc., it can be realized only by using a complex and expensive court using a semiconductor process. There is a disadvantage that In addition, in order to increase the amount of light absorption, it is necessary to increase the thickness of the i-layer. In this case, when the mobility of the layer is low, the generated carriers cannot escape to the outside, so performance is rather deteriorated.

Republic of Korea Patent Publication No. 10-2011-0100478 (2011.09.14.)

As a result of the inventors' earnest efforts to manufacture a UVC sensor using an inexpensive and simple solution process instead of the conventionally used semiconductor process, CaSnO ₃ having a bandgap of 4.4 eV (~280 nm) or more for absorption selectivity in the UVC region In the case of synthesizing nanoparticles and manufacturing a pin-structured UVC sensor using the CaSnO ₃ nanoparticles, UVC selectivity is high, and sensitivity can be maximized by optimizing the thickness of CaSnO ₃ , and in zero bias mode After confirming that it is possible to operate and minimize power consumption with noise, the present invention was completed.

An object of the present invention is to provide a UVC sensor using a perovskite structure nanomaterial having a wide bandgap. The UVC sensor according to the present invention has a pin structure in which a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ used as an intrinsic layer, and an electron transport layer made of n-type nanoparticles are stacked in this order. It is characterized in that it has

Another object of the present invention is to provide a method for manufacturing a UVC sensor using a perovskite-structured nanomaterial having a wide bandgap.

The UVC sensor comprising the CaSnO ₃ layer according to the present invention can improve the 254 nm UV selectivity due to strong absorption in the DUV spectrum as well as an increase in the number of light-generated carriers. In particular, when the CaSnO ₃ layer is formed to a thickness of 30 nm, it has a high detection rate of 1.56×10 ¹⁰ Jones, a fast response time of 80/70ms (rise/fall time), and a high 254:365 nm photocurrent ratio of 5.5. performance can be shown.

1 shows the XRD pattern of CaSnO ₃ NPs.
Figure 2 (a) is the UV-Vis spectrum of CaSnO ₃ NPs, Figure 2 (b) is the PL spectrum of CaSnO ₃ NPs, Figure 2 (c) is the electron-only IV curve and Figure 2 (d) the IV curve of the hole device. indicates
Figure 3(ab) shows the IV curves of pn and pin devices, (c) Detectivity and EQE, and (d) transient photoresponses of different devices at 0V.
Figure 4(a) UV-Vis spectrum (i ₁ -i ₅ ) of CaSnO ₃ film as a function of thickness and Figure 4(b) show Nyquist plots of different devices (pi ₁ n-pi ₅ n) under 254 nm UV illumination. , Fig. 4(c) shows It curves under 254 and 365 nm illumination, and Fig. 4(d) shows the spectral response of the pi ₂ n device at 0 V.
Figure 5 shows the FIB-SEM image of the pi ₂ n device.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Reference to an element or layer “on” or “on” another element or layer includes not only directly on the other element or layer, but also with intervening other layers or elements. include all On the other hand, reference to an element "directly on" or "directly on" indicates that no intervening element or layer is intervening.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe a correlation between an element or components and other elements or components. Spatially relative terms should be understood as terms including different orientations of the device during use or operation in addition to the orientation shown in the drawings. For example, when an element shown in the drawings is turned over, an element described as "below or beneath" another element may be placed "above" another element. Accordingly, the exemplary term “below” may include both directions below and above. The device may also be oriented in other orientations, in which case spatially relative terms may be interpreted according to orientation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used with the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly specifically defined.

According to the first embodiment,

The present invention is to provide a UVC sensor using a perovskite structure nanomaterial with a wide bandgap, the UVC sensor comprising:

Board;

a transparent electrode layer formed on the substrate;

a metal electrode layer formed to face the transparent electrode layer;

and a p-i-n layer formed between the transparent electrode layer and the metal electrode layer,

The pin layer comprises a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ formed on the hole transport layer, and an electron transport layer made of n-type nanoparticles formed on the light absorption layer do it with That is, in the UVC sensor according to the present invention, a substrate, a transparent electrode layer, a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ , an electron transport layer made of n-type nanoparticles and a metal electrode are stacked from the lower layer. As described above, the UVC sensor according to the present invention is laminated in order of a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ used as an intrinsic layer, and an electron transport layer made of n-type nanoparticles. to form a pin structure.

In the UVC sensor according to the present invention, the wavelength of the ultraviolet rays is characterized in that 100 nm to 280 nm.

In the UVC sensor according to the present invention, the substrate is characterized in that quartz (Quartz).

In the UVC sensor according to the present invention, the substrate is indium-tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO), aluminum doped oxide It is characterized in that it is coated with zinc (AZO; aluminum-zinc oxide; ZnO:Al), aluminum-tin oxide (ATO; aluminum-tin oxide; SnO2:Al) and tin-based oxide, zinc oxide (ZnO), and combinations thereof. .

In the UVC sensor according to the present invention, the transparent electrode layer is poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) [Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), PEDOT: PSS] or It is characterized in that it is graphene. The transparent electrode layer may be treated with methanol to reduce sheet resistance and improve UV region transmittance.

In the UVC sensor according to the present invention, the thickness of the transparent electrode layer is 30 to 70 nm, preferably 50 nm.

In the UVC sensor according to the present invention, the hole transport layer made of the p-type polymer has a thickness of 10 to 30 nm, preferably 15 nm.

In the UVC sensor according to the present invention, the thickness of the light absorption layer made of CaSnO ₃ is 10 to 50 nm, preferably 30 nm.

In the UVC sensor according to the present invention, the electron transport layer made of the n-type nanoparticles has a thickness of 10 to 50 nm, preferably 30 nm.

In the UVC sensor according to the present invention, the metal electrode layer is silver (Ag), gold (Au), aluminum (Al), platinum (Pt), tungsten (W), copper (Cu), molybdenum (Mo), gold ( Au), nickel (Ni), and may include one or two or more selected from the group consisting of palladium (Pd).

In an exemplary embodiment, the UVC sensor according to the present invention includes a Quartz/ITO/PH1000/TFB/CaSnO ₃ /Ag structure, and a high detection rate of 1.56×10 ¹⁰ Jones, 80/70 ms (rise/fall time) It can have a fast response time of , and a high 254:365 nm photocurrent ratio of 5.5.

According to the second embodiment,

An object of the present invention is to provide a method for manufacturing a UVC sensor using a perovskite-structured nanomaterial having a wide bandgap, the method comprising:

forming a transparent electrode layer on a substrate;

forming a p-i-n layer on the transparent electrode layer; and

forming a metal electrode on the p-i-n layer;

The pin layer includes a p-type TFB layer, a CaSnO ₃ layer and an n-type SnO ₂ layer,

The thickness of the CaSnO ₃ layer is characterized in that 10 to 50 nm.

In the method for manufacturing a UVC sensor according to the present invention, the thickness of the CaSnO ₃ layer is 30 nm.

In the method for manufacturing a UVC sensor according to the present invention, the transparent electrode layer is methanol-treated poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) [Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) ), PEDOT:PSS].

In the method for manufacturing a UVC sensor according to the present invention, the p-type TFB layer is formed by spin-coating a TBF solution on the transparent conductive layer, and applying the spin-coated TBF solution at 100 to 130° C. for 5 to 20 minutes. It is characterized in that it is formed by the step of heat treatment for minutes.

In the method for manufacturing a UVC sensor according to the present invention, the CaSnO ₃ layer is formed by spin-coating a CaSnO ₃ nanoparticle suspension on the p-type TFB layer, and spin-coated CaSnO ₃ nanoparticle suspension 100 to 130. It is characterized in that it is formed by the step of heat treatment at ℃ for 5 minutes to 20 minutes. The spin-coating may be performed 1 to 5 times, preferably 2 times.

In the method for manufacturing a UVC sensor according to the present invention, the n-type SnO ₂ layer is formed by spin-coating a SnO ₂ nanoparticle suspension on the CaSnO ₃ layer, and spin-coated SnO ₂ nanoparticle suspension from 100 to It is characterized in that it is formed by the step of heat treatment at 130 ℃ for 5 minutes to 20 minutes.

Hereinafter, the present invention will be described in more detail by way of Examples and Experimental Examples. However, the following Examples and Experimental Examples are merely illustrative of the present invention, and the content of the present invention is not limited to the following Examples and Experimental Examples.

<Example>

1-1. Preparation of CaSnO ₃ NPs

Calcium chloride dihydrate (CaCl ₂ 2H ₂ O , 99.5 % DaeJung) and sodium tartrate trihydrate (Na ₂ SnO ₃ 3H ₂ O , 95 % Aldrich) were used as precursors and polyvinylpyrrolidone (PVP) as a capping agent. , M _w ~55000, Aldrich) by a precipitation method in the presence of CaSnO ₃ nanoparticles (NPs) were synthesized. First, 6 mmol of CaCl ₂ · 2H ₂ O and 5 mmol of Na ₂ SnO ₃ · 3H ₂ O were respectively dissolved in 20 mL of deionized water (DI) to obtain two homogeneous solutions A and B. Then, 3 mmol PVP was added to solution A and stirred at 25° C. for 30 minutes. Solution B was slowly added dropwise to the solution while stirring at 25°C. After a white slurry was formed, the resulting mixture was transferred to a sealed vial and stirred vigorously at 100° C. for 16 hours. The CaSn(OH) ₆ precipitate was centrifuged and washed 5 times with hot ethanol and deionized water (70 °C) to remove impurities (PVP, Na ⁺ and Cl ⁻ ), then dried at 60 °C for 12 h, and in air for 6 h CaSn(OH) ₆ was converted to CaSnO ₃ by calcination at 800 °C during The synthetic route of CaSnO ₃ is as follows:

Na ₂ SnO ₃ + 3H ₂ O → Na ₂ [Sn(OH) ₆ ]

Na ₂ [Sn(OH) ₆ ] + CaCl ₂ → CaSn(OH) ₆ + 2NaCl

CaSn(OH) ₆ → CaSnO ₃ + 3H ₂ O

Finally, 1 g of the synthesized CaSnO ₃ was suspended in 50 mL of a mixture of chloroform and methanol (1:1 v/v), followed by wet ball-milling (Pulverisette 5, Fritsch, Germany) for 24 hours, followed by sonication for 1 hour. and centrifugation at 3000 rpm for 5 min to discard larger particles, respectively, to obtain CaSnO ₃ NP suspensions each having an estimated concentration of 5 mg mL ⁻¹ .

1-2. Confirmation of the crystal structure of CaSnO ₃ NPs

To confirm the crystal structure of the prepared CaSnO ₃ nanoparticles, X-ray diffraction (XRD; Rigaku DMAX 2200, Japan) was analyzed using Cu Kα radiation (λ=1.5406 Å) at a scan rate of 2° min ^-1 did As a result, the XRD pattern of CaSnO ₃ powder was (020), (200), (121), (040), (141), (123), (242) and (116) of orthorhombic CaSnO ₃ without additional impurity peaks. It was confirmed that CaSnO ₃ of high purity was synthesized in perfect agreement with the characteristic 2θ peak patterns 22.5, 31.6, 32.0, 45.9, 51.7, 57.6, 67.0 and 76.2° corresponding to the plane ( FIG. 1 ).

1-3. Confirmation of optical properties of CaSnO ₃ NPs

UV-Vis and PL spectra were measured to confirm the optical properties of the prepared CaSnO ₃ nanoparticles. As a result, strong absorbance was shown in the UV range corresponding to the electron excitation of the Sn ²⁺ center from the singlet ground state (S0) to the singlet excited state (S1), especially in the UVC band (clear absorption peak at 250 nm) (Fig. 2a) Estimation based on the Tauc plot shows that the band gap of CaSnO ₃ NPs (4.45 eV) is larger than the previously reported CaSnO ₃ value due to the quantum confinement effect when the CaSnO ₃ particles reach the nanometer size. In addition, upon excitation at 250 nm, the PL spectrum of CaSnO ₃ NPs showed an intense peak at 495 nm, corresponding to cyan emission emission (Fig. 2b). Therefore, it was confirmed that CaSnO ₃ synthesized according to the present invention can be used as an efficient light absorber in a DUV photodetector.

1-4. Evaluation of carrier transport properties of CaSnO ₃ NPs

In order to confirm the carrier transport properties of CaSnO ₃ nanoparticles, space-charge-limited current (SCLC) measurements were performed on electron-only and hole-only devices. The IV curves of both devices showed three regions (Fig. 2c-d). At low applied bias, the current increased linearly with voltage (I∝V ¹ ), showing ohmic behavior, and at medium bias, it rapidly increased with voltage (I∝V ⁿ , n>3) due to trap-charge process. A trap-charge limit (TFL) region was observed with increasing current. The trap density (n _t ) of the prepared CaSnO ₃ was determined as the TFL voltage (VTFL) using the following equation:

(In Equation 1, e is the electronic charge, d is the thickness of the CaSnO ₃ film (30 nm), ε0 is the vacuum permittivity, and ε is the dielectric constant of CaSnO3 (ε=14))

Therefore, the trap density of CaSnO ₃ for electrons and holes is 2.61×10 ¹⁹ and higher than that of halide light-absorbers, such as FASnI ₃ , Cs ₃ Cu ₂ I ₅ and MAPbI ₃ (MA: methylammonium, FA: formamidinium), respectively, respectively. It was confirmed as 3.56×10 ¹⁹ cm ^-3 . At an additional bias where excess carriers suppress the trap, the device operates in the trap-free SCLC region, and the IV curve is determined according to the following Mott-Gurney law:

(In Equation 2 above, I _dark is the dark current density, μ is the carrier mobility, V _b is the applied bias, A is the surface area of the active region (0.1656 cm ² ), and d is the thickness of the CaSnO ₃ film (30 nm))

Therefore, the electron and hole mobility (μ _e and μ _h ) values of CaSnO ₃ were compared with that of another Sn-based perovskite FASnI ₃ (μ _h = 0.91×10 ⁻⁴ cm ² V ⁻¹ s ⁻¹ ). Thus, 4.86×10 ^-10 and 1.42×10 ^-10 cm ² V ^-1 s ^-1 were calculated, respectively. Therefore, it was confirmed that the optimal thickness (30 nm) of the CaSnO ₃ film, which satisfies both the increase in UVC absorption and relaxation of the photogenerated charge resistance to the electrode, could play a pivotal role in the pin photodetector performance.

Example 2. SnO ₂ Preparation of NP Suspension

SnO ₂ NP suspensions have been previously studied [W. Gao, C. Ran, J. Li, H. Dong, B. Jiao, L. Zhang, X. Lan, X. Hou, Z. Wu, J. Phys. Chem. Lett. , 2018 , 9, 6999.] was prepared by hydrothermal reaction. Briefly, 1 mmol tin chloride pentahydrate (SnCl ₄ 5H ₂ O , 98 % Aldrich) was dissolved in 50 mL of absolute ethanol (99.9 % DaeJung) and deionized water (1:1 v/v) solution. The resulting homogeneous mixture was transferred to an autoclave at 150° C. for 24 hours. Then, the obtained solution was centrifuged and washed 3 times with absolute ethanol, and then re-dispersed in 25 mL of absolute ethanol to obtain a SnO ₂ NP suspension of about 6 mg mL ^-1 concentration. CaSnO ₃ NPs and SnO ₂ NPs were stored in glass vials at 25 °C and sonicated in a water bath for 30 min before use.

Example 3. Fabrication and Performance Verification of Photodetector

3-1. Manufacturing of photodetectors

UV PD having a vertical pin structure was manufactured through a low-temperature solution process. First, an ITO-coated quartz substrate (0.6×1.5cm ² /1.5×1.5cm ² , sheet resistance 15Ω/sq, Korea Nanomaterials) was washed with detergent, acetone, deionized water, and isopropanol using ultrasonication for 10 minutes. Then, a methanol-treated PH1000 (PEDOT:PSS, 1.3 wt.% Heraeus Clevios™) layer was used as a transparent electrode layer as described in H. Uratani, K. Yamashita, J. Phys. Chem. Lett. , 2017, 8, 742.] were deposited on the substrate using the reported procedure. Then, 60 μL of TFB (Mw>30,000, Aldrich) solution (dissolved in chlorobenzene at a concentration of 10 mg mL ⁻¹ ) was spin coated at 4000 rpm for 40 seconds to deposit a p-type layer on the methanol-treated PH1000. After heating on a hot plate (120 °C) for 10 minutes and cooling to 25 °C, 60 μL of CaSnO ₃ NP suspension was spin-coated at 3000 rpm for 30 seconds, followed by heating at 120 °C for 10 minutes to induce an absorber layer. Similarly, 60 μL of SnO ₂ NP suspension was spin-coated at 3000 rpm for 30 sec and then heated at 120° C. for 10 min to deposit an n-type layer on the CaSnO ₃ layer. Finally, an 80 nm-thick Ag layer was deposited as the upper electrode at a rate of 2 Å s ^-1 under a high vacuum pressure of 8×10 ^-6 in a thermal evaporation system (STM-100/MF Sycon Instrument, USA). The overlapping active area of the device was 0.1656 cm ² .

3-2. Performance evaluation according to CaSnO ₃ layer thickness

(1) 1 to 5 (i ₁ , i ₂ , i ₃ , i ₄ and i ₅ ) spin-coatings of CaSnO ₃ thin films with different thicknesses controlled by pin photodiodes (pi ₁ n, pi ₂ n, pi ₃ n , denoted by pi ₄ n and pi ₅ n). Also, for comparison, a pn photodetector (denoted as pn) was prepared without using a CaSnO ₃ layer as a control. Key parameter properties of the UV photodetector such as reactivity (R), specific detection (D*) and EQE were calculated using the following equations:

(In Equations 3 to 5 above, I _dark is the dark current, I _light is the current under 254 nm UV illumination, P _opt is the incident light power, A is the surface area of the active region (0.1656 cm ² ), e is the electronic charge, and h is the Planck constant , c is the speed of light, and λ is the wavelength of the irradiated light.) Fig. 3 shows the IV curves of the devices under dark and 254 nm UV illumination. In contrast to the similar level of dark current (Fig. 3a), the photocurrent was significantly increased at zero bias when CaSnO ₃ thin films were used, and the maximum photocurrent was found to be 10-fold higher in the pi ₂ n device than in the pn device (Fig. 3b). As a result, as shown in Fig. 3c, the D* and EQE (at 0V) values increased from 4.31 × 10 ⁸ Jones and 0.04 % (pn device) to 1.56 × 10 ¹⁰ Jones and 1.06 % (pi ₂ n), respectively, so that pn It has been found that introducing an i-layer of appropriate thickness between the junctions can significantly increase the number of UVC-induced charge carriers. For the transient photoresponse (It curve) at 0V (Fig. 3d), the pi ₂ n device was 10.5, indicating an on/off ratio higher than 2.2 of the control pn device. Thus, it was shown that the number of absorbed photons in the UVC range (ie, the number of photoexcited charge carriers in the CaSnO ₃ region) outweighs the number of control pn devices that can use relatively few charge carriers in the depletion region. Absorbance increased with increasing CaSnO ₃ film thickness (Fig. 4a), but in the case of photocurrent CaSnO ₃ film thickness decreased in pi3n, pi4n and pi5n devices (Figs. 3b and 3d).

(2) CaSnO ₃ In order to confirm the effect of film thickness on light carrier transport, EIS measurement was additionally performed at 254 nm radiation. The value of the charge transfer resistance (Rct) of the pin device, determined according to the EIS Nyquist plot (Fig. 4b) according to the equivalent circuit (inset in Fig. 4b), increased from 34 to 80 Ω cm ² with the CaSnO ₃ thickness, showing that the IV curve and It curve Contradictory results appeared. The increase in Rct, which means a decrease in charge transfer kinetics, is related to (i) carrier scattering and trapping by many traps in thick CaSnO ₃ film, and (ii) slow charge transfer in CaSnO ₃ . Therefore, the optimal photodetector was found to be a pi ₂ n device corresponding to two spin-coating applications of CaSnO ₃ , and the CaSnO ₃ layer thickness was confirmed to be ~30 nm based on FIB-SEM images of the pi ₂ n device. became (Fig. 5).

(3) In addition, the 254:365 nm rejection (photocurrent ratio under 254 nm to 365 nm illumination) of the pi2n device was 5.5, which was higher than that of the pn device 1.2 (Fig. 4c). The high selectivity of the DUV region in the pi2n detector was confirmed by the spectral reactivity measured in Fig. 4d, which is consistent with the UV-Vis spectrum of the CaSnO ₃ layer (Fig. 2a).

(4) In conclusion, the incorporation of a 30 nm-thick CaSnO ₃ film to form a pin photodetector not only improves the photocurrent response, but also improves the selectivity of the UVC spectrum due to high DUV absorption, especially for a large number of photogenerated electron-hole pairs. It has been proven that this can be improved.

It looked at the examples mainly. Those of ordinary skill in the art to which the present invention pertains will understand that the present invention can be implemented in a modified form without departing from the essential characteristics of the present invention. Therefore, the disclosed embodiments are to be considered in an illustrative rather than a restrictive sense. The scope of the present invention is indicated in the claims rather than the foregoing description, and all differences within the scope equivalent thereto should be construed as being included in the present invention.

Claims (10)

An object of the present invention is to provide a UVC sensor using a perovskite structure nanomaterial with a wide bandgap, the UVC sensor comprising:
Board;
a transparent electrode layer formed on the substrate;
a metal electrode layer formed to face the transparent electrode layer;
A pin layer formed between the transparent electrode layer and the metal electrode layer,
The pin layer comprises a hole transport layer made of a p-type polymer, a light absorption layer made of CaSnO ₃ formed on the hole transport layer, and an electron transport layer made of n-type nanoparticles formed on the light absorption layer. , UVC sensor.
The method of claim 1,
The thickness of the hole transport layer made of the p-type polymer is characterized in that 10 to 30 nm, UVC sensor.
The method of claim 1,
The thickness of the light absorption layer made of CaSnO ₃ is, characterized in that 10 to 50 nm, UVC sensor.
The method of claim 1,
The thickness of the electron transport layer made of the n-type nanoparticles is 10 to 50 nm, characterized in that the UVC sensor.
The method of claim 1,
The UVC sensor is characterized in that it has a high detection rate of 1.56×10 ¹⁰ Jones, a fast response time of 80/70ms (rise/fall time) and a high 254:365 nm photocurrent ratio of 5.5.
An object of the present invention is to provide a method for manufacturing a UVC sensor using a perovskite-structured nanomaterial with a wide bandgap, the method comprising:
forming a transparent electrode layer on a substrate;
forming a pin layer on the transparent electrode layer; and
forming a metal electrode on the pin layer;
The pin layer includes a p-type TFB layer, a CaSnO ₃ layer and an n-type SnO ₂ layer,
The thickness of the CaSnO ₃ layer is 10 to 50 nm, the method of manufacturing a UVC sensor.
The method of claim 6, wherein the thickness of the CaSnO ₃ layer is 30 nm.
7. The method of claim 6,
The transparent electrode layer is methanol-treated poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) [Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), PEDOT: PSS] characterized in that , a method of manufacturing a UVC sensor.
7. The method of claim 6,
The CaSnO ₃ layer is in the step of spin-coating the CaSnO ₃ nanoparticle suspension on the p-type TFB layer, and heat-treating the spin-coated CaSnO ₃ nanoparticle suspension at 100 to 130 ° C. for 5 to 20 minutes. A method of manufacturing a UVC sensor, characterized in that it is formed by.
10. The method of claim 9,
The spin-coating is a method of manufacturing a UVC sensor, characterized in that performed 2 to 5 times.

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