KR20220062207A - Apparatus for treating substrate - Google Patents

Abstract

The present invention provides a substrate processing device. The substrate processing device comprises: a process chamber in which a substrate processing process is performed; a substrate support member provided in the process chamber, supporting a substrate, and applied with power; a supply line supplying a cooling gas to the substrate placed on the substrate support member; and an arcing prevention member preventing arcing by dissipating energy of the cooling gas by moving the cooling gas in a zigzag manner through an intersecting inner pattern disposed on the supply line.

Description

Substrate processing apparatus

The present invention relates to a plasma processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.

As the semiconductor and display industries develop, substrate processing such as wafers and glass is also progressing in the direction of ultra-fine and high-integration of desired patterns in a limited area. is being utilized Plasma processing is widely used in processing processes of semiconductors and display substrates due to advantages such as high-density process control. The plasma processing apparatus includes a single-wafer type or a batch type apparatus, and in the single-wafer type plasma processing apparatus, electrodes are vertically opposed in a vacuum chamber, and high-frequency power is applied between the electrodes to generate plasma.

Referring to FIG. 6, a typical single-wafer semiconductor plasma processing apparatus includes an upper electrode 21 and a substrate support member positioned to face the upper electrode 21 in a vacuum chamber 10 and on which a semiconductor substrate as a target object is mounted, The substrate support member includes a lower electrode 52 to which power is applied and an electrostatic chuck 51 . The upper electrode and the lower electrode are spaced apart from each other to face each other, and matched high-frequency power is applied from the outside, and the gas in the vacuum chamber is ionized by the high-frequency power applied to the upper and lower electrodes 21 and 52, A high-density plasma is generated in the space between the lower electrodes 21 and 52 . Here, an electrostatic chuck 51 for mounting a substrate is installed above the lower electrode 52 , and the lower portion of the lower electrode 52 is formed of an insulator 54 . When plasma is generated by applying high-frequency power to the upper and lower electrodes 21 and 52 , a DC voltage is applied to the electrostatic chuck 51 through a constant DC high-voltage power supply 65 to electrostatically adsorb the substrate 30 . is fixed to the electrostatic chuck 51 . At this time, in the microspace S between the substrate 30 and the electrostatic chuck 51 , a heat transfer gas, for example, helium gas, is supplied through the heat transfer gas supply line 60 to facilitate temperature control of the substrate 30 . is supplied After the plasma treatment process for a certain period of time is finished, the helium gas is exhausted by the exhaust line, and the substrate 30 that has been electrostatically adsorbed to the electrostatic chuck 51 is desorbed by the negative DC high-voltage power supply and transferred out of the vacuum chamber 10 . do.

Here, the helium gas is injected to facilitate heat transfer between the substrate 30 and the electrostatic chuck 51 during the plasma processing process to maintain the temperature of the substrate at an appropriate level. However, during the plasma processing process, when DC high-voltage power is applied to fix the substrate 30 to the electrostatic chuck 51 and high-frequency power is applied to the lower electrode 52 , a potential difference with the grounded lower support member 55 is , which also affects the gas supply line 60 passing through the lower electrode 52 , the insulator 54 , and the support member 55 . Due to the characteristics of helium, which is a metastable gas, it is easily ionized by an electric field generated by a high-frequency power source, and a discharge occurs inside the gas supply line 60 .

As shown in the conceptual diagram of helium ionization in FIG. 7 , when helium gas is supplied to the gas supply line 60 , the electrons inside the gas supply line are moved by the potential difference between the electrostatic chuck 51 and the grounded support member 55 . Accelerated in the electric field direction (E), helium gas is ionized by collision with helium molecules, resulting in an electron avalanche, and eventually a discharge is generated inside the gas supply line. In particular, it is difficult to suppress the ionization of the helium gas and block the discharge due to the nature of the helium gas, which is a metastable gas.

This discharge phenomenon inside the gas supply line 60 makes the matching unstable and affects the plasma to affect the etching process, damage the gas supply line 60 , and stably adsorb the substrate to the electrostatic chuck 51 . , etc., adversely affects not only the plasma processing apparatus as a whole but also the plasma processing process.

In order to suppress the discharge of the gas supply line as described above, conventionally, a member made of porous ceramic is inserted into the gas supply line 60, a fine ceramic ball is inserted, or a spiral supply having a predetermined angle with respect to the lower electrode surface is provided. A method of forming a line and the like have been proposed.

However, in the method of inserting a member made of porous ceramic or inserting a fine ceramic ball into the supply pipe, when the porous hole or the ceramic ball hole becomes small, the helium gas injection is not performed quickly, so the efficiency decreases, and the spiral gas supply If the line is used, there may be a partial discharge suppression effect, but there is an unreasonable problem in terms of efficiency because the length of the overall gas supply line is too long.

An object of the present invention is to provide a discharge suppressing member for preventing discharge from occurring in a heat transfer gas supply pipe and a plasma processing apparatus using the same.

An object of the present invention is to provide a plasma processing apparatus capable of lowering the risk of arcing and reducing the dump time compared to the prior art.

The problems to be solved by the present invention are not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, a process chamber in which a substrate processing process is performed; a substrate support member provided in the process chamber, supporting a substrate, and to which power is applied; a supply line for supplying a cooling gas to the substrate placed on the substrate support member; and an arcing preventing member configured to prevent arcing by zigzag movement of the cooling gas through an inner pattern crossing shape disposed on the supply line to exhaust energy of the cooling gas.

In addition, the arcing preventing member may include an outer tube having an inner passage; a support rod provided in the longitudinal direction at the center of the inner passage; and wing members protruding in multiple stages along the longitudinal direction of the support rod and connected to the inner surface of the outer tube.

In addition, the wing member may include a plurality of blades on the same line, and a gas movement path may be provided between the plurality of blades.

In addition, the wing member may be disposed to be displaced from the gas movement path between the wings of the adjacent wing member.

In addition, the arcing preventing member may be manufactured by 3D printing technique.

According to another aspect of the present invention, an outer tube having an inner passage through which the cooling gas passes; a support rod provided in the longitudinal direction at the center of the inner passage; And an arcing prevention member including wing members protruding in multiple stages along the longitudinal direction of the support rod to increase the movement distance of the cooling gas and connected to the inner surface of the outer tube may be provided.

In addition, the wing member may include a plurality of blades on the same line, and a gas movement path may be provided between the plurality of blades.

In addition, the wing member may be disposed to be displaced from the gas movement path between the wings of the adjacent wing member.

In addition, the outer tube, the support rod, and the wing members may be manufactured integrally.

According to this embodiment, by applying 3D printing technology to parts that are difficult to machine processing, by manufacturing an arcing prevention member, the risk of arcing is lowered than before, and the dump time can be advantageously improved to improve facility performance. there is.

Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of the main part of the arcing preventing member shown in FIG. 1 .
3 is a cross-sectional perspective view of the arcing preventing member.
Figure 4a is a plan view of the arcing preventing member.
4B is a cross-sectional view of a main part of the arcing preventing member.
Figure 4c is a view for explaining the wing member installed on the support rod.
5 is a view for explaining the movement of helium gas in the arcing preventing member.
6 is a cross-sectional view of a conventional plasma processing apparatus.
7 is a conceptual diagram of the ionization of helium gas.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.

In an embodiment of the present invention, a substrate processing apparatus for processing a substrate by generating plasma using an inductively coupled plasma (ICP) method will be described. However, the present invention is not limited thereto, and can be applied to various types of apparatuses for processing a substrate using plasma, such as a Conductively Coupled Plasma (CCP) method or a remote plasma method.

In addition, in the embodiment of the present invention, an electrostatic chuck will be described as an example of the support unit. However, the present invention is not limited thereto, and the support unit may support the substrate by mechanical clamping or support the substrate by vacuum.

1 is an exemplary diagram illustrating a substrate processing apparatus 1000 according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 10 processes the substrate S using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate S. The substrate processing apparatus 10 may include a process chamber 100 , a substrate support assembly 200 , a plasma generating unit 300 , a gas supply unit 400 , and a baffle unit 500 .

The process chamber 100 may provide a processing space in which a substrate processing process is performed. The process chamber 100 may have a processing space therein and may be provided in a closed shape. The process chamber 100 may be made of a metal material. The process chamber 100 may be made of an aluminum material. The process chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the process chamber 100 . The exhaust hole 102 may be connected to the exhaust line 151 . Reaction by-products generated during the process and gas remaining in the internal space of the chamber may be discharged to the outside through the exhaust line 151 . The inside of the process chamber 100 may be decompressed to a predetermined pressure by the exhaust process. For example, the exhaust line 151 may be controlled by the controller 700 to adjust the process pressure inside the process space of the process chamber 100 to 20 mT to 50 mT.

According to an example, the liner 130 may be provided inside the process chamber 100 . The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner surface of the chamber 100 . The liner 130 may protect the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by arc discharge. In addition, it is possible to prevent impurities generated during the substrate processing process from being deposited on the inner wall of the chamber 100 . The liner 130 may be exposed to the processing space inside the process chamber 100 to react with the first cleaning gas, and may include yttria (Y2O3) material.

The substrate support assembly 200 may be positioned inside the process chamber 100 . The substrate support assembly 200 may support the substrate S. The substrate support assembly 200 may include an electrostatic chuck 210 for adsorbing the substrate S using electrostatic force. Alternatively, the substrate support assembly 200 may support the substrate S in various ways such as mechanical clamping. Hereinafter, the substrate support assembly 200 including the electrostatic chuck 210 will be described.

The substrate support assembly 200 may include an electrostatic chuck 210 , a lower cover 250 , and a plate 270 . The substrate support assembly 200 may be located inside the chamber 100 while being spaced apart from the bottom surface of the chamber 100 upwardly.

The electrostatic chuck 210 may include a dielectric plate 220 , a body 230 , and a focus ring 240 . The electrostatic chuck 210 may support the substrate S.

The dielectric plate 220 may be positioned on the top of the electrostatic chuck 210 . The dielectric plate 220 may be provided as a disk-shaped dielectric (dielectric substance). A substrate S may be placed on the upper surface of the dielectric plate 220 . The upper surface of the dielectric plate 220 may have a smaller radius than the substrate S. Therefore, the edge region of the substrate S may be located outside the dielectric plate 220 .

The dielectric plate 220 may include a first electrode 223 , a heater 225 , and a first supply passage 221 therein. The first supply passage 221 may be provided from an upper surface to a lower surface of the dielectric plate 210 . A plurality of first supply passages 221 are formed to be spaced apart from each other, and may be provided as passages through which the heat transfer medium is supplied to the bottom surface of the substrate S.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be installed between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by ON/OFF of the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223 . An electrostatic force acts between the first electrode 223 and the substrate S by the current applied to the first electrode 223 , and the substrate S may be adsorbed to the dielectric plate 220 by the electrostatic force.

The heater 225 may be positioned under the first electrode 223 . The heater 225 may be electrically connected to the second power source 225a. The heater 225 may generate heat by resisting the current applied from the second power source 225a. The generated heat may be transferred to the substrate S through the dielectric plate 220 . The substrate S may be maintained at a predetermined temperature by the heat generated by the heater 225 . The heater 225 may include a spiral-shaped coil.

The body 230 may be positioned under the dielectric plate 220 . The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be bonded by an adhesive 236 . The body 230 may be made of an aluminum material. The upper surface of the body 230 may be stepped so that the central region is higher than the edge region. The central region of the top surface of the body 230 has an area corresponding to the bottom surface of the dielectric plate 220 , and may be adhered to the bottom surface of the dielectric plate 220 . The body 230 may have a first circulation passage 231 , a second circulation passage 232 , and a second supply passage 233 formed therein.

The first circulation passage 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation passage 231 may be formed in a spiral shape inside the body 230 . Alternatively, the first circulation passage 231 may be arranged such that ring-shaped passages having different radii have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 may be formed at the same height.

The second circulation passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation passage 232 may be formed in a spiral shape inside the body 230 . Alternatively, the second circulation passage 232 may be arranged such that ring-shaped passages having different radii have the same center. Each of the second circulation passages 232 may communicate with each other. The second circulation passage 232 may have a larger cross-sectional area than the first circulation passage 231 . The second circulation passages 232 may be formed at the same height. The second circulation passage 232 may be located below the first circulation passage 231 .

The second supply passage 233 extends upward from the first circulation passage 231 and may be provided on the upper surface of the body 230 . The second supply passage 243 is provided in a number corresponding to the first supply passage 221 , and may connect the first circulation passage 231 and the first supply passage 221 .

The first circulation passage 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. A heat transfer medium may be stored in the heat transfer medium storage unit 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. The helium gas may be supplied to the first circulation passage 231 through the supply line 231b, and may be supplied to the bottom surface of the substrate S through the second supply passage 233 and the first supply passage 221 sequentially. . The helium gas may serve as a medium through which heat transferred from the plasma to the substrate S is transferred to the electrostatic chuck 210 .

The second circulation passage 232 may be connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. A cooling fluid may be stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid storage unit 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c circulates along the second circulation passage 232 to cool the body 230 . As the body 230 cools, the dielectric plate 220 and the substrate S are cooled together to maintain the substrate S at a predetermined temperature.

The body 230 may include a metal plate. According to an example, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The third power source 235a may be provided as a high frequency power source for generating high frequency power. The high-frequency power source may include an RF power source. The body 230 may receive high-frequency power from the third power source 235a. Due to this, the body 230 may function as an electrode, that is, a lower electrode.

The focus ring 240 may be disposed on an edge region of the electrostatic chuck 210 . The focus ring 240 has a ring shape and may be disposed along the circumference of the dielectric plate 220 . The upper surface of the focus ring 240 may be stepped such that the outer portion 240a is higher than the inner portion 240b. The inner portion 240b of the upper surface of the focus ring 240 may be positioned at the same height as the upper surface of the dielectric plate 220 . The upper inner portion 240b of the focus ring 240 may support an edge region of the substrate S positioned outside the dielectric plate 220 . The outer portion 240a of the focus ring 240 may be provided to surround an edge region of the substrate S. The focus ring 240 may control the electromagnetic field so that the density of plasma is uniformly distributed over the entire area of the substrate S. Accordingly, plasma is uniformly formed over the entire area of the substrate S, so that each area of the substrate S may be etched uniformly.

The lower cover 250 may be located at a lower end of the substrate support assembly 200 . The lower cover 250 may be positioned to be spaced apart from the bottom surface of the chamber 100 upwardly. The lower cover 250 may have a space 255 having an open upper surface formed therein. The outer radius of the lower cover 250 may be provided to have the same length as the outer radius of the body 230 . In the inner space 255 of the lower cover 250 , a lift pin module (not shown) for moving the transferred substrate S from an external transfer member to the electrostatic chuck 210 may be positioned. The lift pin module (not shown) may be positioned to be spaced apart from the lower cover 250 by a predetermined distance. A bottom surface of the lower cover 250 may be made of a metal material. Air may be provided in the inner space 255 of the lower cover 250 . Since air has a lower dielectric constant than the insulator, it may serve to reduce the electromagnetic field inside the substrate support assembly 200 .

The lower cover 250 may have a connection member 253 . The connecting member 253 may connect the outer surface of the lower cover 250 and the inner wall of the chamber 100 . A plurality of connection members 253 may be provided on the outer surface of the lower cover 250 at regular intervals. The connection member 253 may support the substrate support assembly 200 in the chamber 100 .

In addition, the connection member 253 may be connected to the inner wall of the chamber 100 so that the lower cover 250 is electrically grounded. A first power line 223c connected to the first power source 223a, a second power line 225c connected to the second power source 225a, and a third power line 235c connected to the third power source 235a , the heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a and the cooling fluid supply line 232c connected to the cooling fluid storage unit 232a are connected to the lower part through the internal space 255 of the connection member 253 . It may extend into the cover 250 .

A plate 270 may be positioned between the electrostatic chuck 210 and the lower cover 250 . The plate 270 may cover the upper surface of the lower cover 250 . The plate 270 may be provided with a cross-sectional area corresponding to the body 230 . The plate 270 may include an insulator. According to an example, one or a plurality of plates 270 may be provided. The plate 270 may serve to increase the electrical distance between the body 230 and the lower cover 250 .

The plasma generating unit 300 may excite the process gas in the chamber 100 into a plasma state. The plasma generating unit 300 may use a capacitively coupled plasma type plasma source. When a CCP-type plasma source is used, the upper electrode 330 and the lower electrode, that is, the body 230 may be included in the chamber 100 . The upper electrode 330 and the lower electrode 230 may be vertically disposed parallel to each other with a processing space therebetween. The lower electrode 230 as well as the upper electrode 330 may receive an RF signal by the RF power source 310 to receive energy for generating plasma, and the number of RF signals applied to each electrode is as shown. are not limited to one. An electric field is formed in the space between the electrodes, and the process gas supplied to the space may be excited into a plasma state. A substrate processing process is performed using this plasma. The RF signal applied to the upper electrode 330 and the lower electrode 230 may be controlled by the controller 700, for example, the controller 700 adjusts the output of the power supplied to the upper electrode to 2000W to 3000W. And, the output of the power supplied to the lower electrode can be adjusted to 500W to 1000W.

The gas supply unit 400 may supply a process gas into the chamber 100 . The gas supply unit 400 may include a gas supply nozzle 410 , a gas supply line 420 , and a gas storage unit 430 . The gas supply nozzle 410 may be installed in the center of the upper surface of the chamber 100 . An injection hole may be formed on a bottom surface of the gas supply nozzle 410 . The injection hole may supply a process gas into the chamber 100 . The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage unit 430 . The gas supply line 420 may supply the process gas stored in the gas storage unit 430 to the gas supply nozzle 410 . A valve 421 may be installed in the gas supply line 420 . The valve 421 may open and close the gas supply line 420 and control the flow rate of the process gas supplied through the gas supply line 420 .

The gas supply unit 400 may supply a first gas and a second gas different from the first gas into the process chamber. Here, the first gas may be a gas containing nitrogen trifluoride (NF3), and the second gas may be a gas containing oxygen (O2), but is not limited thereto. When the first gas and the second gas are supplied from the gas supply unit 400 and electric power is supplied to the upper electrode and the lower electrode to generate the first cleaning gas, the controller 700 uses the first cleaning gas to control the process chamber ( 100 ) The inner processing space may be primarily cleaned, and then, a second cleaning gas different from the first cleaning gas may be supplied to the processing space inside the process chamber 100 to perform secondary cleaning of the processing space. For example, the first cleaning gas may be fluorine (F2) or hydrogen fluoride (HF), and the second cleaning gas may include an inert gas.

Also, the gas supply unit 400 may be controlled by the controller 700 . The gas supply unit 400 may supply a gas including an inert gas. Here, the inert gas may be argon (Ar) gas.

The baffle unit 500 may be positioned between the inner wall of the chamber 100 and the substrate support assembly 200 . The baffle 510 may be provided in an annular ring shape. A plurality of through holes 511 may be formed in the baffle 510 . The process gas provided in the process chamber 100 may pass through the through holes 511 of the baffle 510 to be exhausted into the exhaust hole 102 . The flow of the process gas may be controlled according to the shape of the baffle 510 and the shape of the through holes 511 .

According to an embodiment of the present invention, a waveguide 320 may be disposed on the upper electrode 330 . The waveguide 320 transmits the RF signal provided from the RF power source 310 to the upper electrode 330 . The waveguide 320 may have a conductor that can be drawn into the waveguide.

When the substrate processing apparatus 10 applies high-frequency power to the body 230 serving as a lower electrode for plasma generation, electrons in the helium gas flowing through the supply line 231b are accelerated by the voltage generated by the high-frequency power. may cause a discharge. To prevent this, an arcing preventing member 900 may be installed on the supply line 231b.

Figure 2 is an enlarged view of the main part of the arcing preventing member shown in Fig. 1, Fig. 3 is a cross-sectional perspective view of the arcing preventing member, Fig. 4a is a plan view of the arcing preventing member, Fig. 4b is a cross-sectional view of the arcing preventing member, Fig. 4c is a support bar It is a view for explaining the installed wing member.

2 to 4C , the arcing prevention member 900 may include an outer tube 910 , a support rod 920 , and a wing member 930 . The anti-arc member is characterized in that it forms a cross pattern so that the energy received by the helium gas due to the potential difference is exhausted.

The outer tube 910 provides an inner space, and its cross-section is made in the form of a cylindrical case. The support rod 920 may be provided in the longitudinal direction at the center of the inner passage. The wing members 930 are formed to protrude in multiple stages along the longitudinal direction of the support rod 920 . The wing member 930 protrudes from the outer surface of the support rod 920 and is connected to the inner surface of the outer tube 910 . The wing member 930 may include a plurality of wings 932 on the same line.

In the present embodiment, the wing member 930 may include four wings 932 at intervals of 90 degrees. A movement passage through which helium gas may pass is provided between the wings 932 . As shown in FIGS. 4A and 5 , a movement passage (hatched area) formed between the wings 932 of the wing member 930 is provided to correspond to the wings 932 of the adjacent wing member 930 . That is, the gas passage of the wing member 930 is provided to be shifted from the gas passage of the adjacent wing member 930 . For example, acceleration is suppressed while the helium gas collides with the wing of the next wing member immediately after passing through the gas movement passage of the wing member 930, and the helium gas collided in this way passes through the movement passage between the colliding blades. And the helium gas passing through the moving passage passes through the intersecting patterns of the arcing preventing member 900 while repeating the process of colliding with the wings 932 of the next wing member 930 . For reference, the outer tube is omitted in FIG. 5 .

일 수 있다.(현재 구조에서

0.000000002%)As such, the helium gas is provided to the substrate after passing through the intersecting patterns of the anti-arcing member 900, and the probability that two molecules meet again after passing through the anti-arcing member 900 is a simple calculation.

(in the current structure)

0.000000002%)

The arcing preventing member 900 according to the present invention may increase the moving distance of the helium gas through the inner pattern crossing shape. And, by allowing the E of the helium gas, which is increased due to the potential difference, to be exhausted while passing through each of the crossing patterns, arcing can be prevented from occurring. The flow path of the helium gas is formed in a portion that does not overlap with other workpieces, so that the amount of helium gas supplied to each facility can be provided to be similar.

The outer tube 910, the support rod 920, and the wing member 930 of the arc prevention member 900 as described above are integrally manufactured. As an example, the arcing preventing member 900 may be manufactured using a 3D printing technique. Therefore, it is possible to minimize the difference in the amount of helium gas due to the processing tolerance between the arc prevention member and other parts through the pattern configuration in the anti-arching member.

The above description is merely illustrative of the technical spirit of the present invention, and various modifications and variations will be possible without departing from the essential characteristics of the present invention by those skilled in the art to which the present invention pertains. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

900: arcing prevention member 910: outer tube
920: support bar 930: wing member

Claims (9)

a process chamber in which a substrate processing process is performed;
a substrate support member provided in the process chamber, supporting the substrate, and to which power is applied;
a supply line for supplying a cooling gas to the substrate placed on the substrate support member; and
and an arcing preventing member for preventing arcing by zigzag movement of a cooling gas through an inner pattern crossing shape disposed on the supply line to exhaust energy of the cooling gas. According to claim 1,
The arcing preventing member is
an outer tube having an inner passage;
a support rod provided in the longitudinal direction at the center of the inner passage; and
The substrate processing apparatus including wing members protruding in multiple stages along the longitudinal direction of the support rod and connected to the inner surface of the outer tube. 3. The method of claim 2,
The wing member is
Including a plurality of wings on the same line,
A substrate processing apparatus provided with a gas movement path between the plurality of blades. 4. The method of claim 3,
The wing member is
A substrate processing apparatus disposed to be displaced from a gas flow passage between the blades of the adjacent wing members. 3. The method of claim 2,
The arcing preventing member is
Substrate processing equipment manufactured by 3D printing technique. an outer tube having an inner passage through which the cooling gas passes;
a support rod provided in the longitudinal direction at the center of the inner passage; and
An arcing preventing member including wing members protruding in multiple stages along the longitudinal direction of the support rod to increase the movement distance of the cooling gas and connected to the inner surface of the outer tube. 7. The method of claim 6,
The wing member is
Including a plurality of wings on the same line,
An arcing preventing member provided with a gas passage passage between the plurality of blades. 8. The method of claim 7,
The wing member is
An arcing preventing member disposed to be displaced from the gas flow passage between the blades of the adjacent wing member. 7. The method of claim 6,
The outer tube, the support rod, and the wing members are an arcing preventing member manufactured integrally.

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