KR20220049926A - Substrate Processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing device and, more particularly, to a substrate processing device for performing substrate processing such as deposition, etching, etc. on a substrate using plasma. The present invention discloses a substrate processing device comprising: a process chamber (100) forming a closed processing space (S); a gas injection unit (200) installed above the process chamber (100) to inject gas into the processing space (S); a substrate support unit (300) installed below the process chamber (100) to support the substrate (10) and be grounded or to be applied with an RF bias; and a gas supply unit (400) for supplying the gas to the gas injection unit (200) in communication with the gas injection unit (200). Accordingly, the thin film deposition rate can be improved.

Description

Substrate Processing Apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing substrate processing such as deposition and etching on a substrate using plasma.

A substrate processing apparatus for performing substrate processing using plasma may be classified into a CCP method and an ICP method according to a plasma generation method.

ICP (Inductively Coupled Plasma) refers to high-density plasma generated by changing the electric field at the antenna installed outside the process chamber to generate an induced magnetic field inside the coil, and the resulting secondary induced electric field is formed inside the reactor. .

On the other hand, CCP (capacitively coupled plasma) refers to plasma generated using an induced electric field induced by capacitive coupling between the upper electrode and the lower electrode installed in the process chamber.

The substrate processing apparatus using the CCP type plasma generally forms a CCP plasma by applying a single high-frequency power to a showerhead for gas injection as an upper electrode and grounding a substrate support unit (susceptor) supporting the substrate as a lower electrode. do.

However, as the substrate becomes larger in area, a region in which plasma is weak is generated in the processing space and the plasma density in the processing space is low.

In addition, since the supplied gas is dissociated by the CCP plasma in the processing space, there is a problem in that the gas dissociation rate is lowered and radical efficiency or reactivity is lowered.

An object of the present invention is to provide a substrate processing apparatus capable of improving radical efficiency and reactivity and improving thin film deposition rate and thin film quality by increasing the dissociation rate of a gas for substrate processing in order to solve the above problems. there is.

Another object of the present invention is to provide a substrate processing apparatus capable of improving plasma density and uniformity in a processing space.

The present invention was created to achieve the object of the present invention as described above, and the process chamber 100 for forming a closed processing space (S); a gas injection unit 200 installed on the upper side of the process chamber 100 to inject gas into the processing space S; a substrate support unit 300 installed under the process chamber 100 to support the substrate 10 and to which a grounding or RF bias is applied; Disclosed is a substrate processing apparatus including a gas supply unit 400 communicating with the gas injection unit 200 and supplying gas to the gas injection unit 200 .

The gas supply unit 400 communicates with the gas dissociation unit 410 for dissociating the gas for substrate processing by applying RF power, and the gas dissociation unit 200, and is dissociated by the gas dissociation unit 410. It may include a plurality of gas supply tubes 420 and 430 forming a flow path through which the gas flows.

It may include an antenna unit 800 installed above the gas injection unit 200 to form an induced electric field in the processing space (S).

The gas injection unit 200, RF power may be applied, and the substrate support unit 300 may be grounded or an RF bias may be applied.

The gas injection unit 200 is spaced below the first plate 210 so that a first diffusion space F1 is formed on the lower side of the first plate 210 and the first plate 210 . The second plate 220 is installed and through which a plurality of first open holes 222 for gas injection are formed, and the second diffusion space F2 is formed at the lower side of the second plate 220. It may include a third plate 230 which is installed at a distance on the lower side of the plate 210 and through which a plurality of second open holes 232 for gas injection are formed.

The gas dissociation unit 410 dissociates the first gas supplied to the first diffusion space F1 and the second gas supplied to the second diffusion space F2 by applying RF power of different frequencies. can

The plurality of gas supply tubes 420 and 430 communicate with the gas injection unit 200 so that the first gas dissociated by the gas dissociation unit 410 is supplied to the first diffusion space F1. The first gas supply tube 420 coupled to the first plate 210 and the second gas dissociated by the gas dissociation unit 410 are supplied to the second diffusion space F2. A second gas supply tube 430 that passes through the plate 210 and is coupled to the second plate 220 may be included.

The gas ejection unit 200 includes the first open hole 222 and the second A plurality of connection passages 240 installed between the opening holes 232 may be additionally included.

The second open hole 232 includes a first gas injection hole 232a that communicates with the connection passage 240 for the first gas to be injected, and the second gas injection hole 232a supplied to the second diffusion space F2. It may include a second gas injection hole 232b through which the 2 gas is injected.

The gas dissociation part 410 is a first coil part to which RF power is applied so that plasma is formed in the first gas supply tube 420 while surrounding the outer peripheral surface of each of the first gas supply tubes 420 in a spiral shape. 610 and a second coil part 620 to which RF power is applied so that plasma is formed in the second gas supply tube 430 while surrounding the outer peripheral surface of each of the second gas supply tubes 430 in a spiral shape. may include

The frequency of the RF power applied to the first coil unit 610 and the frequency of the RF power applied to the second coil unit 620 may be different from each other.

The frequency of the RF power applied to the first coil unit 610 and the second coil unit 620 may be different depending on a position on a plane.

At least one of the first gas and the second gas may be a mixed gas in which two or more types of gases are mixed.

The gas dissociation unit 410 includes a first remote plasma source 710 coupled to one end of the first gas supply tube 420 and a second remote coupled to one end of the second gas supply tube 430 . A plasma source 720 may be included.

The RF frequency of the first remote plasma source 710 and the RF frequency of the second remote plasma source 720 may be different from each other.

The antenna unit 800, one end is connected to the third RF power source 540, the other end is grounded, the plurality of gas supply tubes (420, 430) and one or more spirally wound and installed at a position that does not interfere. It may be a spiral type antenna.

The spiral type antenna may be provided in plurality and may be installed in correspondence with each of the plurality of areas above the gas injection unit 200 .

The spiral type antenna may be spirally wound around one of the plurality of gas supply tubes 420 and 430 .

The antenna unit 800 is installed at a position where it does not interfere with the plurality of gas supply tubes 420 and 430, one end connected to the third RF power source 540 is branched and formed, and then merged at the other end. It may be one or more loop-type antennas that are grounded to form a closed curve.

The loop-type antenna may be provided in plurality and may be installed in correspondence with each of the plurality of areas above the gas injection unit 200 .

The plurality of gas supply tubes 420 and 430 may be located inside the loop-type antenna.

Add an RF filter for removing howling caused by overlapping at least two frequencies among the frequencies of the RF power applied to the gas injection unit 200, the gas dissociation unit 410, and the antenna unit 800 can be included as

In the substrate processing apparatus according to the present invention, the gas first dissociated from the outside of the process chamber is supplied to the gas injection unit of the process chamber, and the gas first dissociated from the processing space inside the process chamber is treated by secondary dissociation using plasma in the processing space. There is an advantage in that the ion radical efficiency is improved in the space and the reactivity is improved, so that the thin film deposition rate is improved.

In particular, the substrate processing apparatus according to the present invention can greatly increase the dissociation rate of the gas by controlling the frequency for the primary dissociation of the gas to be changed according to the dissociation rate of the gas for processing the substrate, and through this, the plasma density in the processing space And there is an advantage that can improve the uniformity.

In addition, when processing a substrate through the substrate processing apparatus according to the present invention, it is possible to deposit _a thin film with a higher density _than a thin film, and less gas can be used. There is an advantage in that it can be prevented from penetrating into the thin film and deterioration of the thin film quality.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.
FIG. 3A is a plan view illustrating a part of the configuration of the substrate processing apparatus of FIG. 1 .
3B is a plan view illustrating a modification of FIG. 3A .
4 is a circuit diagram showing an electrical connection relationship of a part of the configuration of the substrate processing apparatus of FIG. 1 .
FIG. 5A is a graph showing a relationship between RF power for primary gas dissociation and ion flux in a processing space in the substrate processing apparatus of FIGS. 1 to 2 .
FIG. 5B is a graph illustrating a relationship between an RF power for primary gas dissociation and radicals in a processing space in the substrate processing apparatus of FIGS. 1 to 2 .
6A to 6D are simulations illustrating an induced electric field in a processing space in the substrate processing apparatus of FIGS. 1 to 2 .

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

A substrate processing apparatus according to the present invention is a processing apparatus for performing substrate processing using plasma, and includes a process chamber 100 forming a closed processing space (S) and an upper side of the process chamber 100 , A gas injection unit 200 that injects gas into the processing space S, a substrate support unit 300 installed below the process chamber 100 to support the substrate 10, and the gas injection unit 200 and a gas supply unit 400 for supplying gas to the gas injection unit 200 in communication with the gas injection unit 200 .

The process chamber 100 is configured to form a closed processing space (S) for substrate processing, various configurations are possible.

For example, the process chamber 100 may include a chamber body having an open upper side, and an upper lid detachably coupled to the opening of the chamber body.

The chamber body is a configuration in which the substrate support part 300 is installed, and various configurations are possible, and one or more gates (not shown) are provided on the inner wall for introducing and discharging the substrate 10 to the processing space S. can be formed.

In addition, an exhaust port 104 for exhausting gas or process by-products in the processing space S may be formed in the chamber body.

The process chamber 100 may be grounded.

The substrate support unit 300 is installed under the process chamber 100 to support the substrate 10 , and various configurations are possible.

The substrate support unit 300 may function as a lower electrode for forming a capacitively coupled plasma in the processing space (S).

For example, the substrate support unit 300, as shown in FIGS. 1 to 2 , an RF bias may be applied.

The RF bias may be applied to the substrate support part 300 by the RF power source 520 for RF bias applied to the bias plate 302 installed in the substrate support part 300 .

The RF power source 520 for the RF bias may apply RF power of a low frequency, for example, a frequency of 13.56Mhz or 2Mhz.

When an RF bias is applied to the substrate support unit 300 by the RF power source 520 for the RF bias, a negative bias voltage or sheath voltage may be generated, which accelerates the dissociated gas in the processing space S to react can improve productivity.

In particular, since the bias voltage is formed on the substrate support part 300 , there is an advantage that a higher density and thin film can be formed on the substrate 10 . Through this, the stress on bending of the substrate 10 can be reduced, and there is an advantage that a dense and thin thin film similar to ALD can be formed.

As another example, although not shown, the substrate support unit 300 may be grounded.

In this case, the substrate support part 300 may be grounded through a variable capacitor (VVC (Vacuum Variable Capacitor)).

In addition, a heater unit 304 for temperature control of the substrate 10 may be installed inside the substrate support unit 300 .

The gas injection unit 200 is installed on the upper side of the process chamber 100, and various configurations are possible as a shower head for injecting gas into the processing space (S).

The gas ejection unit 200 may function as an upper electrode for forming a capacitively coupled plasma in the processing space S together with the substrate support unit 300 to which RF power is applied.

The gas injected from the gas injection unit 200 is a gas for substrate processing such as deposition and etching, and may be a single type or a mixed gas in which several types of gases are mixed.

For example, the gas may be a mixed gas in which H ₂ , SiH ₄ , NH ₃ , N ₂ O, N ₂ and the like are mixed as a source gas for depositing a nitride film on the substrate 10 .

In an embodiment, the gas injection unit 200 includes a first plate 210 electrically connected to an external first RF power source 510 and a first diffusion space ( A second plate 220 installed at an interval below the first plate 210 so as to form F1) and through which a plurality of first open holes 222 for gas injection are formed, and the second plate ( 220), the third plate is installed at an interval on the lower side of the second plate 210 so that a second diffusion space F2 is formed at the lower side of the second plate 210 and through which a plurality of second open holes 232 for gas injection are formed. (230) may be included.

The first plate 210 may be an uppermost plate electrically connected to an external first RF power source 510 .

The first RF power source 510 is configured to apply RF power to the gas injection unit 200, and may apply RF power of various frequencies.

For example, the first RF power source 510 may apply RF power of a frequency of 13.56Mhz to the gas injection unit 200 .

The second plate 220 is installed at an interval on the lower side of the first plate 210 so that a first diffusion space F1 is formed on the lower side of the first plate 210, It may be a plate through which one open hole 222 is formed.

The second plate 220 may be coupled around an edge of the first plate 210 .

The first open holes 222 are holes for the gas flowing into the first diffusion space F1 to be injected into the processing space S, and may be formed in various shapes and sizes, and have various patterns and densities at various locations. can be formed with

The second plate 220 may be electrically connected to the first plate 210 .

The third plate 230 is installed at an interval on the lower side of the second plate 210 so that a second diffusion space F2 is formed on the lower side of the second plate 220, and a plurality of It may be a plate through which the second open holes 232 are formed.

The third plate 230 may be coupled around an edge of the second plate 220 .

The second open hole 232 is a hole for the gas flowing into the first diffusion space F1 and the second diffusion space F2 to be injected into the processing space S, and may be formed in various shapes and sizes. and may be formed in various patterns and densities at various locations.

The third plate 230 may be electrically connected to the second plate 220 .

In this case, the gas flowing into the first diffusion space F1 may be referred to as a first gas, and the gas flowing into the second diffusion space F2 may be referred to as a second gas.

The first gas and the second gas undergo a chemical reaction in the processing space S to form a thin film on the substrate 10, a process gas such as a raw material gas and a reaction gas, and an inert gas (eg, SiH). ₄ , NH ₃ , N ₂ O, NO, H ₂ , N ₂ , etc.).

At least one of the first gas and the second gas may be a mixed gas in which two or more types of gases are mixed.

When the first gas flowing into the first diffusion space F1 and the second gas flowing into the second diffusion space F2 are mixed with each other, the reaction occurs in the gas injection unit 200 rather than the processing space S. Accordingly, a problem in that the first open hole 222 or the second open hole 232 of the gas injection unit 200 is blocked may occur.

To this end, the gas injection unit 200 includes the first open hole 222 and the first gas supplied to the first diffusion space F1 so as not to flow into the second diffusion space F2. A plurality of connection passages 240 installed between the second open holes 232 may be further included.

The connection flow path 240 is a connection flow path through which the first gas passing through the first open hole 222 bypasses the second diffusion space F2 and directly flows into the processing space S. configuration is possible.

Through this, the first gas of the first diffusion space F1 and the second gas of the second diffusion space F2 can be injected into the processing space S independently of each other without being mixed with each other, and the processing space ( Only S) can mix and react with each other.

The second open hole 232 includes a first gas injection hole 232a that communicates with the connection passage 240 for the first gas to be injected, and the second gas injection hole 232a supplied to the second diffusion space F2. It may include a second gas injection hole 232b through which the 2 gas is injected.

The first gas injection hole 232a is a hole that communicates with the first open hole 222 of the second plate 220 and the connection passage 240 through which the first gas is injected, and has various shapes and sizes. can be formed.

The first gas injection hole 232a is preferably formed at a position overlapping the first open hole 222 vertically so that the connection passage 240 can be formed to extend in the vertical direction.

The second gas injection hole 232b is a hole through which the second gas supplied to the second diffusion space F2 is injected, and may be formed in various shapes and sizes.

The first gas injection hole 232a and the second gas injection hole 232b may be alternately disposed for uniform gas injection.

The connection passage 240 is a feed-through for the first gas, and may be sealed at a connection boundary between the first open hole 222 and the first gas injection hole 232a.

The first plate 210 , the second plate 220 , and the third plate 230 may be provided with a cooling means (not shown) for cooling on the surface to which the plasma is directly exposed therein.

The gas supply unit 400 communicates with the gas injection unit 200 to supply gas to the gas injection unit 200, and various configurations are possible.

In the present invention, the gas supply unit 400 may supply the gas in the primary dissociated state to the gas injection unit 200 .

The gas primarily dissociated by the gas supply unit 400 is supplied to the gas injection unit 200 and injected into the processing space S, and then the gas injection unit 200 and the substrate support unit (S) in the processing space (S). 300), by secondary decomposition and reaction by the capacitively coupled plasma, more uniform and high-density radicals can be formed, and consequently, there is an advantage in that reactivity can be improved.

Through this, uniformity is improved, a dense thin film similar to the ALD process can be formed at a fast deposition rate, and as a result, productivity can be improved.

In addition, by supplying the gas to the processing space (S) after the primary dissociation, there is an advantage that the intended substrate processing is possible even using a smaller amount of gas.

As a process gas, when using SiH ₄ , NH ₃ , H ₂ is generated as a result of the reaction, which penetrates into the thin film and deteriorates the thin film quality (TFT driving characteristics change, pixel/image quality deterioration, IGZO characteristics change, etc.), the present invention In the case of H 2 , it is possible to reduce the amount of H ₂ generated during the process, thereby forming a low-concentration H ₂ thin film to improve the thin film quality.

More specifically, the gas supply unit 400 applies RF power of different frequencies to the first gas supplied to the first diffusion space F1 and the second gas supplied to the second diffusion space F2. The gas dissociation unit 410 for dissociation and dissociation are communicated with the gas dissociation unit 200 and the first gas dissociated by the gas dissociation unit 410 is supplied to the first diffusion space F1. A first gas supply tube 420 coupled to the first plate 210, and the first plate ( It may include a second gas supply tube 430 that passes through 210 and is coupled to the second plate 220 .

The gas dissociation unit 410 is configured to supply the primary dissociated gas to the gas injection unit 200, and various configurations are possible.

The gas dissociation unit 410 may form a plasma using RF power and dissociate the first gas and the second gas to be supplied to the gas injection unit 200 using the plasma.

However, the respective gases constituting the first gas and the second gas may have different dissociation rates under the same condition due to a specific difference.

At this time, the gas dissociation unit 410, the first gas supplied to the first diffusion space (F1) and the second gas supplied to the second diffusion space (F2) according to the dissociation rate RF of different frequencies It can be dissociated by applying power.

For example, assuming that SiH ₄ is included in the first gas as a process gas and NH 3 gas is included in the second gas as a process gas, SiH ₄ is dissociated at a relatively low frequency, and NH ₃ is a relatively high frequency. can be dissociated from

That is, the gas dissociation unit 410 may dissociate the gas using a different frequency according to the dissociation rate of each gas, and the dissociated gas is injected into the processing space S through the gas injection unit 200 and capacitively coupled. Plasma can induce secondary decomposition and a chemical reaction that prevents recombination.

A specific example of the gas dissociation unit 410 will be described later after the first gas supply tube 420 and the second gas supply tube 430 are described.

The first gas supply tube 420 is a gas flow path coupled to the first plate 210 so that the first gas dissociated by the gas dissociation unit 410 is supplied to the first diffusion space F1. Various configurations are possible.

The first gas supply tube 420 is formed to extend from the upper portion of the first plate 210 to the lower portion and passes through the coupling hole 212 provided in the first plate 210 to communicate with the first diffusion space F1. can be

A first diffuser 252 for diffusing the first gas into the first diffusion space F1 may be installed at an end of the first gas supply tube 420 .

The first diffuser 252 may be configured in various configurations such that the first gas is sprayed so that the gas introduced along the first gas supply tube 420 is horizontally diffused in the first diffusion space F1 .

A coupling boundary between the first gas supply tube 420 and the first plate 210 and a coupling boundary between the first diffuser 252 and the first plate 210 may be sealed to prevent the first gas from leaking out.

The first gas supply tube 420 is, as shown in FIGS. 3A to 3B , a plurality of positions in which gas can be uniformly sprayed on the plane of the first plate 210 in order to process the large-area substrate 10 . can be placed as

Specifically, the plurality of first gas supply tubes 420 may be arranged in a plurality of rows spaced apart from each other at regular intervals on the plane of the gas injection unit 200 as shown in FIG. 3A or 3B .

When the first gas supply tube 420 is provided in plurality, each of the first gas supply tubes 420 flows into the first gas supply tube 420 in a state in which all gases constituting the first gas are mixed, or Alternatively, the gas constituting the first gas may be independently introduced into the first diffusion space F1 through each of the first gas supply tubes 420 in a branched state.

1 and 2, A denotes a first gas introduced into the first diffusion space F1 through the first gas supply tube 420, and may be composed of a single type of gas or several types of gases.

In addition, in the gas line extending from the external first gas supply source (not shown) to the plurality of first gas supply tubes 420 , the flow rate of each gas constituting the first gas is independently controlled or each gas is mixed in the gas line. Valves (not shown) may be provided to prevent it from happening.

The second gas supply tube 430 passes through the first plate 210 so that the second gas dissociated by the gas dissociation unit 410 is supplied to the second diffusion space F2 to provide a second Various configurations are possible as a gas flow path coupled to the plate 220 .

The second gas supply tube 430 is formed to extend from the upper portion of the first plate 210 to the lower portion, passes through the coupling hole 212 provided in the first plate 210 and passes through the first diffusion space F1. It may communicate with the coupler 224 of the second plate 220 .

A second diffuser 254 for diffusing the second gas into the second diffusion space F2 may be installed at an end of the second gas supply tube 430 .

The second diffuser 254 may be configured in various configurations by injecting the second gas so that the gas introduced along the second gas supply tube 430 is horizontally diffused in the second diffusion space F2 .

The coupling boundary between the second gas supply tube 430 and the second plate 220 and the coupling boundary between the second diffuser 254 and the second plate 220 may be sealed to prevent the first gas from flowing out.

As shown in FIGS. 3A to 3B , the second gas supply tube 430 is provided in a plurality of positions at positions where gas can be uniformly sprayed on the plane of the first plate 210 in order to process the large-area substrate 10 . can be placed as

Specifically, as shown in FIG. 3A or 3B , the plurality of second gas supply tubes 430 may be spaced apart from each other at regular intervals on the plane of the gas injection unit 200 and arranged in a plurality of rows.

In this case, the plurality of first gas supply tubes 420 and the plurality of second gas supply tubes 430 may be disposed to be spaced apart from each other by a preset interval so as to alternate with each other for uniform gas injection.

When a plurality of the second gas supply tubes 430 are provided, each second gas supply tube 430 flows into the second gas supply tube 430 in a state in which all gases constituting the second gas are mixed, or Alternatively, the gas constituting the second gas may be independently introduced into the second diffusion space F2 through each of the second gas supply tubes 430 in a branched state.

In addition, in the gas line extending from the external second gas supply source (not shown) to the plurality of second gas supply tubes 430 , the flow rate of each gas constituting the second gas is independently controlled or each gas is mixed in the gas line. Valves (not shown) may be provided to prevent it from happening.

The first gas supply tube 420 and the second gas supply tube 430 may be made of a material having plasma corrosion resistance.

Specifically, the first gas supply tube 420 and the second gas supply tube 430 are made of an Al-coated quartz material in order to prevent damage by the gas dissociated by the gas dissociation unit 410 . made of, or made of a ceramic material, or may be made of an AlN material.

In addition, cooling means (not shown) for cooling the first gas supply tube 420 and the second gas supply tube 430 may be provided on surfaces directly exposed to plasma.

In one embodiment, the gas dissociation unit 410 may be a spiral coil installed on the outer peripheral surfaces of the first gas supply tube 420 and the second gas supply tube 430 .

Specifically, the gas dissociation unit 410 surrounds the outer peripheral surface of each of the first gas supply tubes 420 in a spiral shape, and RF power is applied so that plasma is formed in the first gas supply tube 420 . The first coil part 610 and the second coil part ( 620) may be included.

The first coil part 610 is a spiral coil to which RF power is applied so that plasma is formed in the first gas supply tube 420 while surrounding the outer peripheral surface of each of the first gas supply tubes 420 in a spiral shape. Various configurations are possible.

The first coil unit 610 may have one end connected to the second RF power source 530 and the other end grounded through a variable capacitor (VVC).

The first coil part 610 may be provided in a number corresponding to the number of the first gas supply tubes 420 .

The first coil unit 610 may be wound on the outer peripheral surface of the first gas supply tube 420 by a preset length L at a preset height D based on the upper surface of the gas injection part 200 .

As RF power is applied to the first coil unit 610 by the second RF power source 530 , the gas flowing along the inner side of the first gas supply tube 420 may first dissociate to form plasma.

To the first coil unit 610 , RF power of a frequency adjusted (changed) according to the dissociation rate of the gas flowing along the first gas supply tube 420 may be applied.

For example, a high frequency RF power of 13.56Mhz or 27Mhz may be applied to the first coil unit 610 .

The variable capacitor VVC connected to the end of the first coil unit 610 may be connected to the first coil unit 610 in series, parallel, or series-parallel.

In addition, the power of the RF power applied to the first coil unit 610 is also variable (adjusted) depending on the gas flowing along the first gas supply tube 420 or the position on the plane of the first gas supply tube 420 . can be

Similarly, the second coil part 620 is a spirally surrounding the outer peripheral surface of each of the second gas supply tubes 430, and RF power is applied so that plasma is formed in the second gas supply tube 430. As a spiral coil, various configurations are possible.

The second coil unit 620 may have one end connected to the second RF power source 530 and the other end grounded through a variable capacitor (VVC).

The second coil part 620 may be provided in a number corresponding to the number of the second gas supply tubes 430 .

The second coil unit 620 may be wound on the outer peripheral surface of the second gas supply tube 430 by a preset length L at a preset height D based on the upper surface of the gas injection part 200 .

As RF power is applied to the second coil unit 620 by the second RF power source 530 , the gas flowing along the inner side of the second gas supply tube 430 may first dissociate to form plasma.

To the second coil unit 620 , RF power of a frequency adjusted (changed) according to the dissociation rate of the gas flowing along the second gas supply tube 430 may be applied.

For example, a relatively low frequency RF power of 2 Mhz may be applied to the second coil unit 620 .

The variable capacitor VVC connected to the end of the second coil unit 620 may be connected to the second coil unit 620 in series, parallel, or series-parallel.

In addition, the power of the RF power applied to the second coil unit 620 is also variable (adjusted) depending on the gas flowing along the second gas supply tube 430 or the position on the plane of the second gas supply tube 430 . can be

In this case, the frequency of the RF power applied to the first coil unit 610 and the frequency of the RF power applied to the second coil unit 620 may be implemented to be different from each other.

Furthermore, when the first coil unit 610 is provided in plurality, the frequency of the RF power applied to each first coil unit 610 may also be adjusted to be different from each other.

Similarly, when the second coil unit 620 is provided in plurality, the frequency of the RF power applied to each second coil unit 620 may also be adjusted to be different from each other.

In addition, the frequency of the RF power applied to each of the first coil unit 610 and the second coil unit 620 may be adjusted to be different depending on a position on the upper plane of the gas injection unit 200 .

For example, as shown in FIG. 4, some of the plurality of second coil parts 620 are second coil parts 620a and 620b located on the gate (not shown) side of the process chamber 100, Some of the second coil parts 620c and 620d positioned on the opposite side of the gate of the process chamber 100, the second coil parts 620a and 620b positioned on the gate side are the second coil parts positioned on the opposite side of the gate. RF power of a higher frequency or higher power than (620c, 620d) may be applied. Conversely, it is also possible that the second coil units 620a and 620b located on the gate side receive RF power of a lower frequency or power than the second coil units 620c and 620d located on the opposite side of the gate.

FIG. 4 is only an example, and the frequency and power applied to each of the first coil units 610 and the second coil units 620 may be adjusted to be different from each other.

5A to 5B, as the ICP Power (W) of the first coil unit 610 or the second coil unit 620 increases, it can be seen that the ion flux and radicals in the processing space S increase. As a result, it can be seen that the plasma density and uniformity of the processing space S can be increased by adjusting the frequency and power of the RF power applied to the first coil unit 610 and the second coil unit 620 . .

Each of the graphs of FIGS. 5A to 5B means data obtained by varying the distance D between the first coil unit 610 or the second coil unit 620 and the upper surface of the gas injection unit 200 .

In another embodiment, the gas dissociation unit 410 may be a remote plasma source installed between an external gas supply source and the first gas supply tube 420 and the second gas supply tube 430 .

Specifically, the gas dissociation unit 410 is coupled to a first remote plasma source 710 coupled to one end of the first gas supply tube 420 and to one end of the second gas supply tube 430 . A second remote plasma source 720 may be included.

The first remote plasma source 710 is an RPG module coupled to one end of the first gas supply tube 420 (remote plasma module, RPG1), and the gas supplied to the first gas supply tube 420 is 1 Various configurations are possible with the configuration for dissociating the car.

The gas first dissociated through the first remote plasma source 710 may be injected into the processing space S through the first gas supply tube 420 .

Similarly, the second remote plasma source 720 is an RPG module coupled to one end of the second gas supply tube 430 (remote plasma module, RPG2), which is supplied to the second gas supply tube 430 . Various configurations are possible as a configuration for primary dissociation of gas.

The gas first dissociated through the second remote plasma source 720 may be injected into the processing space S through the second gas supply tube 430 .

In this case, the RF frequency of the first remote plasma source 710 and the RF frequency of the second remote plasma source 720 may be implemented to be different from each other.

For example, the first remote plasma source 710 forms a remote plasma with a frequency of 13.56Hhz, which is a relatively high frequency, and the second remote plasma source 720 is a remote plasma with a frequency of 2Mhz, which is a relatively low frequency, which is different from this. can form.

As the gas dissociation unit 410 is configured as a remote plasma source, in-situ cleaning of the process chamber 100 through the gas dissociation unit 410 may be possible.

On the other hand, when the gas dissociation unit 410 is composed of the first coil unit 610 and the second coil unit 620, the F-series cleaning gas is supplied to the first gas supply tube 420 or the second gas supply tube ( 430) and dissociating the cleaning gas using the first coil unit 610 and the second coil unit 620, in-situ cleaning may be possible without a separate RPG module.

To this end, at least one of the first gas supply tube 420 and the second gas supply tube 430 may be connected to a cleaning gas supply unit that supplies a cleaning gas for cleaning the process chamber 100 .

In this case, since the cleaning gas is injected into the process chamber 100 in an activated state by the gas dissociation unit 410 , in-situ cleaning of the process chamber 100 may be possible.

The first gas and the second gas injected into the processing space S in a first dissociated state through the first gas supply tube 420 and the second gas supply tube 430 are gases in the processing space S. A higher density radical and ion flux can be formed through secondary decomposition and reaction by the RF power applied to the spray unit 200, and a high-density thin film is formed on the substrate 10 at a high deposition rate with high-density plasma. can be formed.

On the other hand, in the substrate processing apparatus, in order to form a higher density plasma in the processing space (S), the antenna unit 800 is installed above the first plate 210 to form an induced electric field in the processing space (S). ) may be additionally included.

One end of the antenna unit 800 may be connected to a third RF power source 540 and the other end may be grounded through a variable capacitor (VVC).

When RF power is applied by the third RF power source 540 , an induced electric field may be formed in the processing space S by the antenna unit 800 , thereby forming a higher-density plasma in the processing space S. can be

The third RF power source 540 may apply, for example, RF power of a frequency of 13.56 Mhz to the antenna unit 800 .

The antenna unit 800 may have various shapes and arrangements if it can form a uniform plasma in the processing space S without interfering with the first gas supply tube 420 and the second gas supply tube 430 described above. can be installed.

For example, as shown in FIG. 3A , the antenna unit 800 is configured as a loop-type horizontal antenna divided into a plurality of regions, or as shown in FIG. 3B , a spiral divided into a plurality of regions It may be configured as a type antenna.

More specifically, the antenna unit 800 has one or more ends connected to the third RF power source 540 and the other end grounded, and installed at a position not to interfere with the plurality of gas supply tubes 420 and 430 . It may be a spiral type antenna.

The spiral type antenna may be provided in plurality and may be installed in correspondence with each of the plurality of areas above the gas injection unit 200 .

The upper region of the gas injection unit 200 may be partitioned into a grid structure of an NXM matrix (N and M are natural numbers), as shown in FIG. 3B, and a spiral-type antenna may be installed in correspondence with each region. there is.

The spiral type antenna may be spirally wound around one of the plurality of gas supply tubes 420 and 430 .

Alternatively, the antenna unit 800 may be one or more loop-type antennas installed at a position not to interfere with the plurality of gas supply tubes 420 and 430 .

The loop-type antenna may be a flat-panel antenna flat in a horizontal direction.

The loop-type antenna may form a closed curve by having one end connected to the third RF power source 540 branched and formed, then merged at the other end, and then grounded.

In addition, a plurality of loop-type antennas may be provided to correspond to each of the plurality of areas above the gas injection unit 200 .

In this case, the plurality of loop antennas may be stacked in a layer structure of two or more upper and lower layers, as shown in FIG. 3A .

The loop-type antennas stacked in the upper and lower two-layer structure may be arranged to cross or deviate from each other on a plane, and the RF application direction (the direction from the third RF power source 540 to the ground) may also be arranged to face in opposite directions. there is.

Meanwhile, the plurality of gas supply tubes 420 and 430 may be located inside the loop-type antenna.

Plasma density uniformity and controllability may be greatly improved by controlling the plasma density for each region using the antenna unit 800 .

3A and 3B are only examples of possible shapes of the antenna unit 800, and the configuration of the antenna unit 800 of the present invention is not limited thereto.

The antenna unit 800, through a variable capacitor (VVC) connected to one end may control the uniformity for each region.

Since the magnetic field formed by the antenna unit 800 must pass through the gas injection unit 200 to form an induced electric field in the processing space S, at this time, the gas injection unit 200 is a non-magnetic conductive metal, For example, it may be made of aluminum or an aluminum alloy material.

On the other hand, the substrate processing apparatus according to the present invention, a first RF power supply 510 for applying RF power to the gas injection unit 200, and a second RF power supply 530 for applying RF power to the gas dissociation unit 410 and , may include a third RF power source 540 for applying RF power to the antenna unit 800 .

When at least some of the first RF power source 510, the second RF power source 530, and the 3RF power source 540 overlap in the same frequency region, a howling phenomenon may occur, so that the mutual frequencies do not overlap or Alternatively, an RF filter for removing howling may be additionally provided.

The RF filter is to remove the howling generated by overlapping at least two frequencies among the frequencies of the RF power applied to the gas injection unit 200 , the gas dissociation unit 410 , and the antenna unit 800 . Various configurations are possible as a circuit configuration for

The substrate processing apparatus including the above-described configuration includes a capacitively coupled plasma (CCP) through the gas injection unit 200 and the substrate support unit 300 and an inductively coupled plasma (ICP) through the antenna unit 800 and a gas dissociation unit ( By combining the primary dissociated gas through 410), there is an advantage that a higher density plasma can be formed without damage to the surface of the substrate 10 .

6A to 6D , by adding the gas dissociation unit 410 and the antenna unit 800 in the substrate processing apparatus according to the present invention, the intensity (E-field) of the induced electric field in the processing space S is increased. It can be seen that the uniformity is also increased.

FIG. 6a shows a state in which both uniformity and intensity are reduced by simulating the E-field formed in the processing space S using capacitively coupled plasma by applying the first RF power 510 only to the gas injection unit 200 .

FIG. 6b shows E- formed in the processing space S using capacitively coupled plasma after the gas is first dissociated by the gas dissociation unit 410 and then injected into the processing space S through the gas injection unit 200 By simulating the field, it can be seen that the intensity of the E-field in the processing space S is improved compared to FIG. 6A .

FIG. 6c shows a process space using inductively coupled plasma by the antenna unit 800 after the gas is first dissociated by the gas dissociation unit 410 and then injected into the processing space S through the gas injection unit 200 . By simulating the E-field formed in (S), it can be seen that the intensity and uniformity of the E-field in the processing space (S) are improved compared to FIG. 6b.

When processing the substrate in which the gas dissociation unit 410 and the antenna unit 800 are combined, RF power may not be applied to the gas injection unit 200, and the gas injection unit 200 may also be implemented with a ceramic material. .

Finally, it can be confirmed through simulation that the E-field of the greatest intensity and uniformity are secured by applying an RF bias to the substrate support unit 300 in addition to FIG. 6C in FIG. 6D .

Furthermore, it is of course also possible to perform substrate processing by combining the capacitive defect plasma through the gas injection unit 200 and the inductively coupled plasma through the antenna unit 800 .

In the substrate processing apparatus according to the present invention, by combining the inductively coupled plasma using the antenna unit 800 in the gas dissociation unit 410 and the capacitively coupled plasma using the gas injection unit 200, a higher density plasma can be generated. There is an advantage that radical efficiency and reactivity can be improved, and deposition rate, thin film quality, and thin film uniformity can be improved accordingly.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, as noted, the scope of the present invention should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea with the root are all included in the scope of the present invention.

100: chamber body 200: gas injection part
300: substrate support 400: gas supply

Claims (20)

a process chamber 100 forming a closed processing space (S); a gas injection unit 200 installed on the upper side of the process chamber 100 to inject gas into the processing space S; a substrate support unit 300 installed under the process chamber 100 to support the substrate 10 and to which a grounding or RF bias is applied; A substrate processing apparatus including a gas supply unit 400 communicating with the gas injection unit 200 to supply gas to the gas injection unit 200,
The gas supply unit 400 communicates with the gas dissociation unit 410 for dissociating the gas for substrate processing by applying RF power, and the gas dissociation unit 200, and is dissociated by the gas dissociation unit 410. It includes a plurality of gas supply tubes (420, 430) forming a flow path through which the gas flows,
and an antenna unit (800) installed above the gas injection unit (200) to form an induced electric field in the processing space (S). In claim 1,
The gas injection unit 200, RF power is applied and
The substrate support unit 300 is a substrate processing apparatus, characterized in that the ground or RF bias is applied. The method according to claim 1,
The gas injection unit 200 is spaced below the first plate 210 so that a first diffusion space F1 is formed on the lower side of the first plate 210 and the first plate 210 . The second plate 220 is installed and through which a plurality of first open holes 222 for gas injection are formed, and the second diffusion space F2 is formed at the lower side of the second plate 220. A substrate processing apparatus, comprising a third plate (230) installed at intervals on the lower side of the plate (210) and through which a plurality of second open holes (232) for gas injection are formed. 3. The method according to claim 2,
The gas dissociation unit 410 dissociates the first gas supplied to the first diffusion space F1 and the second gas supplied to the second diffusion space F2 by applying RF power of different frequencies. A substrate processing apparatus, characterized in that. 5. The method according to claim 4,
The plurality of gas supply tubes 420 and 430 communicate with the gas injection unit 200 so that the first gas dissociated by the gas dissociation unit 410 is supplied to the first diffusion space F1. The first gas supply tube 420 coupled to the first plate 210 and the second gas dissociated by the gas dissociation unit 410 are supplied to the second diffusion space F2. and a second gas supply tube (430) passing through the plate (210) and coupled to the second plate (220). 4. The method according to claim 3,
The gas injection unit 200 includes the first open hole 222 and the second gas supplied to the first diffusion space F1 not to flow into the second diffusion space F2 A substrate processing apparatus, characterized in that it further comprises a plurality of connection passages (240) installed between the open holes (232). 7. The method of claim 6,
The second open hole 232 includes a first gas injection hole 232a that communicates with the connection passage 240 for the first gas to be injected, and the second gas injection hole 232a supplied to the second diffusion space F2. A substrate processing apparatus comprising a second gas injection hole (232b) through which two gases are injected. 6. The method of claim 5,
The gas dissociation part 410 is a first coil part to which RF power is applied so that plasma is formed in the first gas supply tube 420 while surrounding the outer circumferential surface of each of the first gas supply tubes 420 in a spiral shape. 610 and a second coil part 620 to which RF power is applied so that plasma is formed in the second gas supply tube 430 while surrounding the outer circumferential surface of each of the second gas supply tubes 430 in a spiral shape. Substrate processing apparatus comprising a. 9. The method of claim 8,
The substrate processing apparatus, characterized in that the frequency of the RF power applied to the first coil unit (610) and the frequency of the RF power applied to the second coil unit (620) are different from each other. 10. The method of claim 9,
The first coil unit (610) and the second coil unit (620), the substrate processing apparatus, characterized in that the frequency of the RF power applied according to the position on a plane is different. 5. The method according to claim 4,
At least one of the first gas and the second gas is a mixed gas in which two or more kinds of gases are mixed. 6. The method of claim 5,
The gas dissociation unit 410 includes a first remote plasma source 710 coupled to one end of the first gas supply tube 420 and a second remote coupled to one end of the second gas supply tube 430 . A substrate processing apparatus comprising a plasma source (720). 13. The method of claim 12,
A substrate processing apparatus, characterized in that the RF frequency of the first remote plasma source (710) and the RF frequency of the second remote plasma source (720) are different from each other. The method according to claim 1,
The antenna unit 800, one end is connected to the third RF power source 540, the other end is grounded, the plurality of gas supply tubes (420, 430) and one or more spirally wound and installed at a position that does not interfere. A substrate processing apparatus, characterized in that it is a spiral type antenna. 15. The method of claim 14,
The spiral-type antenna is provided in plurality, and the substrate processing apparatus, characterized in that it is installed in correspondence with each of the plurality of areas above the gas injection unit 200 . 16. The method of claim 15,
The spiral type antenna is a substrate processing apparatus, characterized in that it is wound spirally around one of the plurality of gas supply tubes (420, 430). The method according to claim 1,
The antenna unit 800 is installed at a position where it does not interfere with the plurality of gas supply tubes 420 and 430, one end connected to the third RF power source 540 is branched and formed, and then merged at the other end. A substrate processing apparatus, characterized in that one or more loop-type antennas are grounded to form a closed curve. 18. The method of claim 17,
The loop-type antenna is provided in plurality, and the substrate processing apparatus, characterized in that it is installed in correspondence with each of the plurality of regions above the gas injection unit 200. 19. The method of claim 18,
The plurality of gas supply tubes (420, 430) are substrate processing apparatus, characterized in that located inside the loop antenna. The method according to claim 1,
Add an RF filter for removing howling caused by overlapping at least two frequencies among the frequencies of the RF power applied to the gas injection unit 200, the gas dissociation unit 410, and the antenna unit 800 A substrate processing apparatus comprising a.

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