KR20220039620A - Stripper composition for removing photoresist and stripping method of photoresist using the same - Google Patents

Abstract

The present invention relates to a stripper composition for photoresist removal capable of effectively removing oxides and inhibiting corrosion of a lower metal film during a stripping process while having excellent stripping power to a photoresist, and a method for stripping the photoresist using the same.

Description

A stripper composition for removing photoresist and a method of stripping a photoresist using the same

The present invention relates to a stripper composition for removing a photoresist and a method for peeling a photoresist using the same, and more particularly, it has an excellent peeling force for the photoresist and inhibits corrosion to the lower metal film during the peeling process, It relates to a stripper composition for removing a photoresist capable of effectively removing the oxide of the photoresist and a method for removing the photoresist using the same.

The microcircuit process or semiconductor integrated circuit manufacturing process of a liquid crystal display device is a conductive metal film such as aluminum, aluminum alloy, copper, copper alloy, molybdenum or molybdenum alloy, or an insulating film such as a silicon oxide film, silicon nitride film, or fork acrylic insulating film on a substrate and It includes various processes of forming various lower layers, uniformly coating the photoresist on the lower layer, selectively exposing and developing to form a photoresist pattern, and then patterning the lower layer with a mask. After the patterning process, there is a process of removing the photoresist remaining on the lower layer, and for this purpose, a stripper composition for removing the photoresist is used.

A stripper composition including an amine compound, a protic polar solvent, and an aprotic polar solvent has been widely known and used since before. Such stripper compositions have been known to exhibit some degree of removal and peeling power to photoresist.

On the other hand, as display high-resolution models increase, the metal of TFT is used as Cu wiring with low electrical resistance.

For example, Cu is applied to the gate, source, and drain wirings among the TFT wirings, and an insulating film such as SiNx or SiOx is deposited on the upper layer.

However, as shown in FIGS. 1 and 2, a metal oxide (Cu Oxide) is generated at the contact portion between Cu and ITO after the deposition of the insulating film, but the ITO is not properly adhered due to the Cu Oxide and Cu during annealing of the ITO wiring /ITO film lifting phenomenon occurs. That is, referring to FIG. 2 , after annealing of the insulating film, the film between Cu and ITO is lifted due to the non-removal of Cu oxide, and the film between SiNx and ITO is lifted due to the PR residual due to the decrease in peeling force.

In order to solve this problem, in the prior art, Cu oxide is removed by performing the strip process, which is the last step of forming the gate or source and drain wirings, twice, and the process time increases and costs occur.

In addition, in the case of a stripper composition composed of a conventional tertiary amine, the peeling force is lowered and it is difficult to remove the metal oxide, and when peeling a large amount of photoresist, the peeling force is lowered. In addition, when a copper metal film is used as the lower film, stains and foreign substances due to corrosion are generated during the peeling process, making it difficult to use, and there are limitations such as inability to effectively remove copper oxide.

An object of the present invention is to provide a stripper composition for photoresist removal that can effectively remove oxides while inhibiting corrosion to the lower metal film during the peeling process while having excellent peeling force for the photoresist.

In addition, the present invention is to provide a method for removing the photoresist using the stripper composition for removing the photoresist.

In the present specification, two or more amine compounds;

an aprotic solvent selected from the group consisting of an amide compound, a sulfone, and a sulfoxide compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen;

protic solvents; and

contains a corrosion inhibitor;

The amine compound may include a) a tertiary amine compound; and b) at least one amine compound selected from the group consisting of cyclic amines, primary amines, and secondary amines, wherein a weight ratio between a) a tertiary amine compound and b) an amine compound is 1:0.05 to 1: 0.8 , a stripper composition for removing photoresist is provided.

In the present specification, there is also provided a method of peeling a photoresist, including the step of peeling the photoresist using the stripper composition for removing the photoresist.

Hereinafter, a stripper composition for removing a photoresist according to a specific embodiment of the present invention and a method for removing a photoresist using the same will be described in more detail.

The terminology used herein is used to describe exemplary embodiments only, and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present specification, terms such as "comprise", "comprising" or "have" are intended to designate the existence of an embodied feature, number, step, element, or a combination thereof, but one or more other features or It should be understood that the existence or addition of numbers, steps, elements, or combinations thereof, is not precluded in advance.

Since the present invention may have various changes and may have various forms, specific embodiments will be illustrated and described in detail below. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention.

* According to one embodiment of the invention, two or more amine compounds; an aprotic solvent selected from the group consisting of an amide compound, a sulfone, and a sulfoxide compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen; protic solvents; and a corrosion inhibitor, wherein the amine compound comprises: a) a tertiary amine compound; and b) at least one amine compound selected from the group consisting of cyclic amines, primary amines, and secondary amines, wherein a weight ratio between a) a tertiary amine compound and b) an amine compound is 1:0.05 to 1: 0.8, a stripper composition for photoresist removal may be provided.

The present inventors conduct research on a stripper composition for photoresist removal, and include the above-described tertiary amine compound as a basis, and a photo containing components such as cyclic amine, primary amine, secondary amine, etc. A stripper composition for removing resist Experiment with the fact that it has excellent peeling power for photoresist compared to a stripper composition composed only of tertiary amine compounds, suppresses corrosion of the lower metal film during the stripping process, and has the property to more effectively remove oxides Confirmed through , and the invention was completed. At this time, in the present specification, the primary amine or secondary amine means a primary linear amine or a secondary linear amine.

Specifically, as the display high-resolution model increases, the metal of the TFT is used as a copper wiring with low electrical resistance. It has a structure in which corrosion of molybdenum with a low redox potential occurs due to dislocation. However, during the strip process, which is a process of removing the photoresist, damage between copper / molybdenum by the stripper occurs and a quality problem occurs, so improvement of the corrosion inhibitor to prevent corrosion of the stripper is required .

Therefore, in the present invention, in order to solve the insulation film floating defect, the copper oxide is effectively removed even if the stripping process of the copper metal wiring (gate or source and drain wiring) is performed only once, thereby reducing the process time and solving the problem of cost We want to provide a way to

Accordingly, in the present invention, by adding a cyclic amine, a linear amine compound, etc., it is possible to improve peel strength and efficiently remove a metal oxide, specifically, a copper oxide (Cu oxide).

As described above, the stripper composition for removing the photoresist of the embodiment is an amide compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen, a ratio selected from the group consisting of sulfone and sulfoxide compounds magnetic solvents; protic solvents; and a corrosion inhibitor to maintain excellent peel strength over time. In addition, the stripper composition for removing the photoresist includes one or more amine compounds selected from the group consisting of cyclic amines, primary amines and secondary amines on the basis of a tertiary amine compound with the composition, to increase the peel strength It is possible to further improve and effectively remove metal oxides, and to realize the effect of suppressing corrosion on the lower metal film.

In particular, the stripper composition of the embodiment includes a linear amine together with a tertiary amine in two or more amine compounds to improve the removal rate for Cu Oxide, so that the photoresist does not remain on the insulating film after stripping the insulating film as before, and the lower metal A metal oxide that may be generated on the film (eg, lower Cu wiring) is easily removed, so that when a transparent conductive film such as ITO is formed, a film lifting phenomenon between the insulating film and the lower metal film can be prevented.

That is, the two or more kinds of amine compounds including the a) and b) components can make the stripper composition for removing the photoresist have peeling power to the photoresist according to a specific combination ratio, and specifically melt the photoresist to remove it can play a role

The tertiary amine compound may be used to impart basic peeling force. However, the stripper composition comprising only the tertiary amine compound has problems in that peeling force is lowered and metal oxide is difficult to remove.

Therefore, the stripper composition for removing the photoresist of the embodiment is based on a tertiary amine compound as an amine compound, and two kinds of amine compounds of a specific composition using compounds such as cyclic amines, primary and secondary amines together Including, it is possible to improve the peeling force than the prior art, and to increase the removal rate of the metal oxide. Preferably, the cyclic compound may further improve peeling force. In addition, the primary or secondary linear amine compound may improve the removal ability of the metal oxide (Cu Oxide).

Moreover, the stripper composition of the embodiment of the above embodiment includes a relatively small content of other amines (cyclic amine and primary or secondary amine) included together with respect to the tertiary amine, so that the metal oxide of the metal-containing lower film can improve the removal rate of In this case, when the content of the amine compound additionally added to the tertiary amine compound in the two or more amine compounds is large, the effect of removing the metal oxide of the metal-containing lower layer is insignificant.

Accordingly, the stripper composition of the embodiment can maximize the effect of preventing corrosion of the copper-containing film, particularly the metal-containing lower film such as copper / molybdenum metal film, when removing the photoresist pattern, and when only the conventional tertiary amine compound is used B. Corrosion of the metal-containing lower layer can be suppressed more efficiently compared to the case of using two or more general amine compounds that do not satisfy the mixing ratio of the amine compound of the present invention.

The stripper composition for photoresist removal of the embodiment is removed in the DIW rinse process immediately after the stripper process to improve the contact resistance between the metal-containing lower layer and the substrate, for example, the contact between the Gate (Cu) and PXL (ITO) resistance can be improved.

In addition, the stripper composition for removing the photoresist of the embodiment (removing solution composition) can effectively remove the metal oxide generated in the metal-containing lower film, such as a copper / molybdenum metal film, with only one use in the stripper process.

Meanwhile, a weight ratio between a) the tertiary amine compound and b) the at least one amine compound may be 1:0.05 to 1:0.8, 1:0.08 to 1:0.5, or 1:0.08 to 1:0.3. In this case, when the content ratio of a) the tertiary amine compound to b) the at least one amine compound is 0.05 or less, the effect of removing the metal oxide of the metal-containing lower layer is insignificant. In addition, when the content ratio of a) the tertiary amine compound to b) the at least one amine compound is 0.8 or more, corrosion of the metal in contact with the stripper may occur. In addition, when the weight ratio between a) the tertiary amine compound and b) the at least one amine compound is 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3, the metal generated in the metal-containing lower layer after deposition of the insulating film of oxides can be more effectively removed and the occurrence of metal corrosion can be suppressed as much as possible.

Therefore, according to an embodiment of the present invention, when a mixture of (a) the tertiary amine compound and (b) a cyclic amine and a primary amine is used, the ratio is 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3.

In addition, when a mixture of (a) the tertiary amine compound and (b) a cyclic amine and a secondary amine is used, the ratio may be 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3.

In addition, according to another embodiment, when mixing the tertiary amine compound and the cyclic amine compound, the ratio may be 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3, but 1: 0.05 to 0.18 or less An excellent effect can be exhibited.

In addition, when the tertiary amine compound and the primary amine compound are mixed, the ratio may be 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3, but when it is 1:0.05 to 0.18 or less, a better effect can be exhibited there is.

When the tertiary amine compound and the secondary amine compound are mixed, the ratio may be 1:0.1 to 1:0.5 or 1:0.08 to 1:0.3, but when it is 1:0.05 to 0.18 or less, a better effect may be exhibited.

Therefore, it is important to use a) a tertiary amine compound and b) the at least one amine compound in a specific weight ratio. The prevention ability can be maximized. In addition, according to the present invention, a) the tertiary amine compound and b) the at least one amine compound are each used, or the weight ratio between the above-described a) tertiary amine compound and b) the at least one amine compound is It is possible to have an excellent anti-corrosion effect on the lower metal film than the case where it is not satisfactory.

On the other hand, the amine compound may be included in an amount of about 0.1 to 10% by weight, or 0.5 to 7% by weight, or 1 to 5% by weight based on the total composition. Depending on the content range of the amine compound, the stripper composition of one embodiment can exhibit excellent peeling force, etc., it is possible to reduce the economical and efficiency degradation of the process due to an excess of amine, and it is possible to reduce the generation of waste liquid, etc. If an excessively large content of the amine compound is included, corrosion of the lower layer, for example, the copper-containing lower layer may be caused, and it may be necessary to use a large amount of a corrosion inhibitor to suppress this. In this case, a significant amount of the corrosion inhibitor may be adsorbed and remained on the surface of the lower layer by a large amount of the corrosion inhibitor, thereby degrading electrical properties of the copper-containing lower layer.

Specifically, if the amine compound is less than 0.1% by weight relative to the total composition, the peeling force of the photoresist stripper composition may be reduced, and if it is more than 10% by weight relative to the total composition, including an excess of the amine compound Accordingly, economic feasibility and efficiency may be reduced in the process.

In addition, within the content range of the amine compound, the above-described a) tertiary amine compound and b) may be used by adjusting the weight ratio between one or more amine compounds.

According to one embodiment, the amine compound is a) a tertiary amine compound and b) a secondary amine compound; a) a tertiary amine compound, and b) a cyclic amine and a primary amine compound; or a) a tertiary amine compound, and b) a cyclic amine and a secondary amine compound.

In addition, according to another embodiment, the amine compound may include a tertiary amine compound and a cyclic amine compound, or include a tertiary amine compound and a primary amine compound, or include a tertiary amine compound and a secondary amine compound. there is.

a weight ratio between the cyclic amine compound and the primary amine compound; Alternatively, the weight ratio between the cyclic amine compound and the secondary amine compound may be 1: 1 to 10, or 1: 1 to 5, or 1: 1-3. In addition, when the weight ratio between the cyclic amine and the primary amine compound is 1:1 or less, the effect of removing the metal oxide of the metal-containing lower layer is insignificant. In addition, when the ratio is 1:10 or more, corrosion of the metal in contact with the stripper may occur.

Meanwhile, the two or more kinds of amine compounds may include a chain-type amine compound having a weight average molecular weight of 95 g/mol or more .

The chain-type amine compound having a weight average molecular weight of 95 g/mol or more appropriately removes the native oxide film on the lower film, for example, the copper-containing film, together with the peeling force for the photoresist, so that the containing film and the insulating film thereon, e.g. For example, interlayer adhesion with a silicon nitride film or the like can be further improved.

Among these chain amines, the tertiary amine compounds basically used in the embodiment are methyl diethanolamine (MDEA), N-butylethanolamine (N-Butyldiethanolamine, BDEA), diethylaminoethanol; DEEA), and triethanolamine (TEA) may include one or more compounds selected from the group consisting of, but is not limited thereto.

The primary amine is (2-aminoethoxy)-1-ethanol [(2-aminoethoxy)-1-ethanol; AEE], aminoethyl ethanol amine (AEEA), isopropanolamine (MIPA) and ethanolamine (MEA) may include one or more compounds selected from the group consisting of, but is not limited thereto. . Specifically, the primary amine is A

The secondary amine is diethanolamine (DEA), triethylene tetraamine (TETA), N-methylethanolamine (N-metylethanloamine; N-MEA), diethylene triamine (Diethylene triamine; DETA) , and may include one or more compounds selected from the group consisting of diethylene triamine (DETA), but is not limited thereto.

Although the specific kind of the cyclic amine compound is not particularly limited, at least one cyclic amine compound having a weight average molecular weight of 95 g/mol or more may be included.

As described above, the cyclic amine may have the effect of further improving the peeling power of the photoresist by a synergistic action with the tertiary amine compound and increasing the dissolving power of the photoresist.

Examples of the cyclic amine compound are not particularly limited, for example, 1-imidazolidine ethanol (1-imidazolidine ethanol), 4-imidazolidine ethanol (4-imidazolidine ethanol), hydroxyethylpiperazine (HEP), and may include one or more compounds selected from the group consisting of aminoethylpiperazine, but is not limited thereto.

In addition, the stripper composition for removing the photoresist may include an amide-based compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen, and these compounds may be used as aprotic solvents. The amide-based compound in which 1 to 2 of the linear or branched alkyl group having 1 to 5 carbon atoms is substituted with nitrogen can dissolve the amine compound well, and the photoresist stripper composition for removing the photoresist is effectively permeated onto the lower film. By doing so, it is possible to improve the peeling force and rinsing force of the stripper composition.

Specifically, the amide-based compound in which the linear or branched alkyl group having 1 to 5 carbon atoms is substituted with nitrogen by 1 to 2 may include an amide-based compound in which a methyl group or an ethyl group is substituted with 1 to 2 nitrogen. The amide-based compound in which the methyl group or the ethyl group is substituted with nitrogen by 1 to 2 may have a structure of Formula 1 below.

[Formula 1]

In Formula 1,

R ₁ is hydrogen, a methyl group, an ethyl group, or a propyl group,

R ₂ is a methyl group or an ethyl group,

R ₃ is hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms,

R ₁ and R ₃ may be bonded to each other to form a ring.

Examples of the linear or branched alkyl group having 1 to 5 carbon atoms are not limited, but for example, a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl group, a pentyl group, etc. may be used.

Examples of the amide-based compound in which the methyl group or ethyl group is substituted with nitrogen 1 to 2 are not particularly limited, but for example, in Formula 1, R ₂ is a methyl group or an ethyl group, and R ₁ and R ₃ are each hydrogen. can

For example, the amide compound in which 1 to 2 of a straight or branched chain alkyl group having 1 to 5 carbon atoms is substituted with nitrogen is diethylformamide (N,N-Diethylformamide), dimethylacetamide (N,N-Dimethylacetamide). ), N-methylformamide (N-Methylformamide), N-methylpyrrolidone (1-Methyl-2-pyrrolidinone), N-ethylformamide (N-Formylethylamine), or a mixture thereof.

In addition, when the boiling point is usually high, the vapor pressure is low, and this amide solvent may be applied to the stripper composition to affect the amount of the stripper used in the field. Accordingly, it is more preferable to use a material having a boiling point in the range of 190 to 215° C. for the amide compound.

According to one embodiment, the amide compound includes N-methylformamide (N-Methylformamide) or N-methylpyrrolidone (1-Methyl-2-pyrrolidinone). That is, since the stripper process is performed at 50° C., the loss of the amount of volatilization of the stripper should be small. The amide compound has a higher boiling point than an amide compound such as diethylformamide (N,N-Diethylformamide) and has a lower vapor pressure, so it volatilizes when using the stripper quantity is low Therefore, it is possible to effectively exhibit peeling properties without increasing the amount used.

In addition, examples of the sulfone used as the aprotic solvent are not particularly limited, but, for example, sulfolane may be used. Examples of the sulfoxide are also not particularly limited, but for example, dimethyl sulfoxide (DMSO), diethyl sulfoxide, dipropyl sulfoxide, and the like may be used.

The aprotic solvent may be included in an amount of 10 to 80% by weight, 20 to 70% by weight, or 30 to 60% by weight, or 35 to 55% by weight based on the total composition. According to the content range, excellent peeling power of the stripper composition for removing the photoresist can be secured, and the peeling power and the rinsing power can be maintained for a long time over time.

In addition, the stripper composition for removing the photoresist may include a protic solvent. The protic solvent, as a polar organic solvent, allows the stripper composition for photoresist removal to permeate better on the lower film to aid in the excellent peeling force of the stripper composition for photoresist removal, and on the lower film such as a copper-containing film By effectively removing stains, it is possible to improve the rinsing power of the stripper composition for removing the photoresist.

The protic solvent may include an alkylene glycol monoalkyl ether. More specifically, the alkylene glycol monoalkyl ether is diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene Glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol Monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether, tripropylene glycol mono butyl ether or a mixture of two or more thereof.

In addition, in consideration of the excellent wettability of the photoresist stripper composition and the improved peeling and rinsing power thereof, as the alkylene glycol monoalkyl ether, diethylene glycol monomethyl ether (MDG), diethylene glycol mono Ethyl ether (EDG) or diethylene glycol monobutyl ether (BDG) may be used.

In addition, the protic solvent may be included in an amount of 10 to 80% by weight, or 25 to 70% by weight, or 30 to 60% by weight based on the total composition. As the content range is satisfied, excellent peeling power of the stripper composition for removing the photoresist can be secured, and the peeling power and the rinsing power can be maintained for a long time over time.

On the other hand, the stripper composition for removing the photoresist may include a corrosion inhibitor. These corrosion inhibitors can inhibit corrosion of a metal-containing lower film such as a copper-containing film when removing the photoresist pattern using the stripper composition for removing the photoresist.

The corrosion inhibitor may include at least one selected from the group consisting of a triazole-based compound, a benzimidazole-based compound, and a tetrazole-based compound.

In this case, examples of the triazole-based compound are not particularly limited, but for example, ((2,2'[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol and 4,5, It may be at least one selected from the group consisting of 6,7-tetrahydro-1H-benzotriazole, specifically ((2,2'[[(methyl-1H-benzotriazol-1-yl)methyl]imino] It may be bisethanol.

The corrosion inhibitor may be included in an amount of 0.01 to 10% by weight, or 0.02 to 5.0% by weight, or 0.03 to 1.0% by weight based on the total composition. If the content of the corrosion inhibitor is less than 0.01 wt % based on the total composition, it may be difficult to effectively inhibit corrosion on the lower layer. In addition, when the content of the corrosion inhibitor is more than 10% by weight based on the total composition, a significant amount of the corrosion inhibitor is adsorbed and remains on the lower film, thereby reducing the electrical properties of the copper-containing lower film, particularly the copper / molybdenum metal film. there is.

Thus, for one embodiment of the photoresist stripper composition for removing, 0.1 to 10% by weight of two or more amine compounds; 10 to 80% by weight of an aprotic solvent selected from the group consisting of amide compounds, sulfones and sulfoxide compounds in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen; 10 to 80% by weight of a protic solvent; and 0.01 to 10% by weight of a corrosion inhibitor.

On the other hand, the stripper composition for removing the photoresist may further include a silicone-based nonionic surfactant. The silicone-based nonionic surfactant can be stably maintained without chemical change, denaturation or decomposition even in a stripper composition with strong basicity, including an amine compound, etc., and compatibility with the above-described aprotic polar solvent or protic organic solvent This can turn out to be excellent. Accordingly, the silicone-based nonionic surfactant is mixed well with other components to lower the surface tension of the stripper composition and to exhibit better wettability and wettability for the photoresist and its underlying film from which the stripper composition is to be removed. As a result, the stripper composition of one embodiment including the same can exhibit a better photoresist peeling force, and exhibit excellent rinsing force for the lower film, so that even after treatment with the stripper composition, almost no stains or foreign substances are generated and left on the lower film It is possible to effectively remove such stains and foreign matter without

Moreover, the silicone-based nonionic surfactant can exhibit the above-described effect even with a very low content of the surfactant, and the generation of by-products due to its denaturation or decomposition can be minimized.

Specifically, the silicone-based nonionic surfactant may include a polysiloxane-based polymer. More specifically, examples of the polysiloxane-based polymer are not particularly limited, but for example, polyether-modified acrylic functional polydimethylsiloxane, polyether-modified siloxane, polyether-modified polydimethylsiloxane, polyethylalkylsiloxane, aralkyl-modified poly Methylalkylsiloxane, polyether-modified hydroxy-functional polydimethylsiloxane, polyether-modified dimethylpolysiloxane, modified acrylic-functional polydimethylsiloxane, or a mixture of two or more thereof can be used.

The silicone-based nonionic surfactant may be included in an amount of 0.0005 wt% to 0.1 wt%, or 0.001 wt% to 0.09 wt%, or 0.001 wt% to 0.01 wt%, based on the total composition. If the content of the silicone-based nonionic surfactant is less than 0.0005% by weight based on the total composition, the peeling force and rinsing force improvement effect of the stripper composition according to the addition of the surfactant may not be sufficiently achieved. In addition, when the content of the silicone-based nonionic surfactant is more than 0.1% by weight based on the total composition, bubbles are generated at high pressure during the peeling process using the stripper composition to cause stains on the lower film, or to cause malfunction of the equipment sensor can

The stripper composition for removing the photoresist may further include a conventional additive as needed, and there is no particular limitation on the specific type or content of the additive.

In addition, the stripper composition for removing the photoresist may be prepared according to a general method of mixing each component described above, and there is no particular limitation on the specific method of manufacturing the stripper composition for removing the photoresist.

The stripper composition for photoresist removal according to an embodiment of the present invention as described above, after cleaning the substrate on which copper is deposited on the entire surface with the photoresist stripper composition, XPS (X-ray photoelectron spectroscopy) using the following formula 1 The measured copper oxide removal force of the cleaned substrate surface may be 0.35 or less, or 0.3 or less, or 0.25 or less, or 0.1 to 0.23.

[Equation 1]

Cu oxide removal power = XPS narrow scan O(Oxygen) quantified number after stripping the substrate with photoresist / XPS narrow scan Cu(copper) quantified number after stripping the substrate with photoresist

In Equation 1, the smaller the number of O/Cu ratio, the better the Cu oxide removal rate, so that in the case of the present invention, very excellent copper oxide removal power can be exhibited.

The substrate may be a glass substrate on which copper having a size of 5 cm × 5 cm is deposited over the entire surface.

The cleaned substrate may be provided by dipping the entire copper-deposited substrate at a temperature of 50° C. using a stripper composition for 60 seconds, washing with tertiary distilled water for 30 seconds, and then drying with an air gun. there is.

In addition, the composition for removing the photoresist has excellent copper oxide removal power, and has excellent peeling power to the photoresist and prevents corrosion of the copper (Cu) / molybdenum (Mo) metal lower layer, so that the display has excellent performance can provide

On the other hand, according to another embodiment of the invention, there may be provided a method of peeling a photoresist comprising the step of peeling the photoresist using the stripper composition for removing the photoresist of the embodiment.

A photoresist stripping method of one embodiment includes: forming a photoresist pattern on a substrate on which a lower layer is formed; patterning the lower layer with the photoresist pattern; And using the stripper composition for removing the photoresist may include the step of peeling the photoresist.

The content related to the stripper composition for removing the photoresist includes the content described above with respect to the embodiment.

Specifically, the method for stripping the photoresist includes first forming a photoresist pattern on a substrate on which a lower layer to be patterned is formed through a photolithography process, followed by patterning the lower layer using the photoresist pattern as a mask, as described above. and stripping the photoresist using a stripper composition.

In the photoresist stripping method, a conventional device manufacturing process may be used for the photoresist pattern forming step and the lower layer patterning step, and there is no particular limitation on a specific manufacturing method therefor.

On the other hand, the example of the step of peeling the photoresist using the stripper composition for removing the photoresist is not particularly limited, for example, the photoresist pattern is treated on the substrate on which the stripper composition for removing the photoresist remains, and alkali A method of washing with a buffer solution, washing with ultrapure water, and drying may be used. As the stripper composition exhibits excellent peeling power, rinsing power to effectively remove stains on the lower film, and natural oxide film removal ability, while effectively removing the photoresist pattern remaining on the lower film, the surface condition of the lower film can be maintained in good condition. there is. Accordingly, a device may be formed by appropriately performing subsequent processes on the patterned lower layer.

Specific examples of the lower layer formed on the substrate are not particularly limited, but may include aluminum or aluminum alloy, copper or copper alloy, molybdenum or molybdenum alloy, or mixtures thereof, composite alloys thereof, composite laminates thereof, and the like. .

The type, component, or physical properties of the photoresist subject to the peeling method are also not particularly limited, and for example, a photo known to be used in a lower film including aluminum or aluminum alloy, copper or copper alloy, molybdenum or molybdenum alloy, etc. It may be a resist. More specifically, the photoresist may include a photosensitive resin component such as a novolak resin, a resol resin, or an epoxy resin.

According to the present invention, while having excellent peeling force for photoresist, corrosion of the lower metal film is suppressed during the peeling process, and in particular, Cu oxide generated in the contact portion between Cu and ITO after depositing the insulating film is effectively removed. A stripper composition for removing a photoresist that can solve the film lifting defect in the insulating film by removing it and a method for removing the photoresist using the same can be provided.

1 is a schematic diagram for explaining a film lifting phenomenon in a strip of an insulating film in a conventional display manufacturing process and an insulating film after an annealing process.
Figure 2 shows the FE-SEM image of the film lifting after the annealing of the insulating film.

The invention is described in more detail in the following examples. However, the following examples only illustrate the present invention, and the content of the present invention is not limited by the following examples.

<Examples and Reference Examples: Preparation of a stripper composition for photoresist removal>

According to the composition of Table 1 below, each component was mixed to prepare a stripper composition for removing the photoresist of Examples and Reference Examples, respectively. The specific composition of the prepared photoresist stripper composition for removal is as described in Tables 1 and 2 below.

Specifically, each composition of Tables 1 and 2 was mixed in a 500ml beaker to prepare 300g. The prepared beaker was stirred and heated on a hot plate to prepare a chemical solution (spriper composition) at a temperature of 50°C.

division Example One 2 3 4 5 6 7 8 9 tertiary
amine MDEA 3 3 3 TEA 3 3 3 BDEA 3 3 3 annular
amine IDE 0.5 0.5 0.5 HEP 0.5 0.5 0.5 AEP 0.5 0.5 0.5 Primary
amine AEEA 0.5 0.5 0.5 AEE 0.5 0.5 0.5 Secondary
amine N-MEA 0.5 0.5 0.5 aprotic
menstruum NMF 55.00 55.00 55.00 50.00 50.00 50.00 NMP 55.00 55.00 55.00 5.00 5.00 5.00 proton solvent EDG 40.70 40.70 40.70 MDG 40.70 40.70 40.70 BDG 40.70 40.70 40.70 preservative 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.30

division Reference example One 2 3 4 5 6 tertiary
amine MDEA 3 3 TEA 3 3 BDEA 3 3 annular
amine IDE 0.5 HEP 0.5 AEP 0.5 Primary
amine AEEA 0.5 AEE 0.5 Secondary
amine N-MEA 0.5 aprotic
menstruum NMF 55.00 55.00 55.00 55.00 55.00 55.00 NMP proton solvent EDG 41.20 41.20 MDG 41.20 41.20 BDG 41.20 41.20 preservative 0.30 0.30 0.30 0.30 0.30 0.30

* MDEA: N-Methyldiethanolamine (CAS: 150-59-9) * TEA: Triethanolamine (CAS: 102-71-6)

* BDEA: N-Butyldiethanolamine (CAS: 102-79-4)

* IDE: 1-Imidazolidine ethanol (CAS: 77215-47-5)

* HEP: Hydroxyethyl-piperazine (CAS: 103-76-4)

* AEP : N-Aminoethylpiperazine (CAS: 140-31-8)

* AEEA: Aminoethylethanolamine (CAS: 111-41-1)

* AEE: 2-(2-amino ethoxy)ethanol (2-(2-Amino Ethoxy) Ethanol, CAS: 929-06-6)

* N-MEA: N-methylethanolamine (N-methylethanolamine, CAS: 109-83-1)

* NMF: N-methylformamide (N-methylformamide, CAS: 123-39-7)

* NMP: N-methyl-2-pyrrolidone (N-Methyl-2-pyrrolidone, CAS: 872-50-4)

* EDG: ethyl diglycol (CAS: 111-90-0)

* MDG: methyl diglycol (CAS: 111-77-3)

* BDG: Diethylene glycol monobutyl ether (CAS: 112-34-5)

* Preservatives:

(2,2'[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol (2,2'[[(Methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol , CAS: 88477-37-6), (DEATTA, IR-42)

<Comparative Examples 1 to 15: Preparation of a stripper composition for photoresist removal>

According to the composition of Tables 3 and 4 below, each component was mixed to prepare a stripper composition for removing the photoresist of Comparative Example, respectively. Specific compositions of the prepared photoresist stripper composition for removal are as described in Tables 3 and 4 below.

Specifically, each composition of Tables 3 and 4 was mixed in a 500ml beaker to prepare 300g. The prepared beaker was stirred and heated on a hot plate to prepare a chemical solution (spriper composition) at a temperature of 50°C.

division comparative example One 2 3 4 5 6 7 8 9 tertiary
amine MDEA 3.5 TEA 3.5 BDEA 3.5 annular
amine IDE 3.5 HEP 3.5 AEP 3.5 Primary
amine AEEA 3.5 AEE 3.5 Secondary
amine N-MEA 3.5 aprotic
menstruum NMF 55.00 55.00 55.00 55.00 55.00 55.00 55.00 55.00 55.00 NMP proton solvent EDG 41.20 41.20 41.20 MDG 41.20 41.20 41.20 BDG 41.20 41.20 41.20 preservative 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.30

division comparative example 10 11 12 13 14 15 tertiary
amine MDEA 3 3 3 5 3 TEA 3 BDEA annular
amine IDE 0.5 3 HEP 0.05 AEP Primary
amine AEEA AEE 5.5 One One Secondary
amine N-MEA 3 0.04 aprotic
menstruum NMF 55.00 55.00 55.00 NMP 55.00 33.99 35.98 proton solvent EDG 50 30 MDG 35.7 BDG 43.7 41.20 43.7 preservative 0.3 0.30 0.30 0.30 0.01 MTBT 0.01 0.01 HMDM 10 deionized water 30

* MDEA: N-Methyldiethanolamine (N-Methyldiethanolamine, CAS: 150-59-9)* TEA: Triethanolamine (CAS: 102-71-6)* BDEA: N-Butyldiethanolamine (N-Butyldiethanolamine) , CAS: 102-79-4)

* IDE: 1-Imidazolidine ethanol (CAS: 77215-47-5)

* HEP: Hydroxyethyl-piperazine (CAS: 103-76-4)

* AEP : N-Aminoethylpiperazine (CAS: 140-31-8)

* AEEA: Aminoethylethanolamine (CAS: 111-41-1)

* AEE: 2-(2-amino ethoxy)ethanol (2-(2-Amino Ethoxy) Ethanol, CAS: 929-06-6)

* N-MEA: N-methylethanolamine (N-methylethanolamine, CAS: 109-83-1)

* NMF: N-methylformamide (N-methylformamide, CAS: 123-39-7)

* NMP: N-methyl-2-pyrrolidone (N-Methyl-2-pyrrolidone, CAS: 872-50-4)

* EDG: ethyl diglycol (CAS: 111-90-0)

* MDG: methyl diglycol (CAS: 111-77-3)

* BDG: Diethylene glycol monobutyl ether (CAS: 112-34-5)

* Preservative: (2,2'[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol(2,2'[[(Methyl-1H-benzotriazol-1-yl)methyl ]imino]bisethanol, CAS: 88477-37-6), (DEATTA, IR-42)

* MTBT: 4-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

* HMDM: 4-hydroxymethyl-2,2-dimethyl-1,3-dioxolane

<Experimental Example: Measurement of physical properties of the photoresist stripper composition obtained in Examples and Comparative Examples>

The physical properties of the stripper compositions obtained in Examples and Comparative Examples were measured by the following method, and the results are shown in the table.

1. Peel force evaluation

(1) Preparation of the substrate for evaluation

First, 3.5 ml of a photoresist composition (trade name: JC-800) was dropped onto a 100 mm × 100 mm glass substrate on which a thin film containing copper was formed, and the photoresist composition was applied in a spin coating apparatus at a speed of 400 rpm for 10 seconds. This glass substrate was mounted on a hot plate and hard-baked under very severe conditions at a temperature of 170° C. for 20 minutes to form a photoresist. After the photoresist-formed glass substrate was air-cooled at room temperature, it was cut into a size of 50 mm × 50 mm to prepare a sample for evaluation of peel force.

(2) peel evaluation

300 g of the stripper composition obtained in Examples and Comparative Examples was prepared, and the substrate was subjected to a dipping treatment for a time between 60 and 600 seconds with the stripper composition in a state where the temperature was raised to 50 °C.

After the immersion, the process of taking out the substrate and washing with tertiary distilled water for 30 seconds was repeated 3 times, and the distilled water was dried with an air gun.

Using an optical microscope, the peeling force was evaluated by checking the time for which the residue of the photoresist disappears in the cleaned sample (unit: sec).

The peel strength of the stripper compositions of Examples and Comparative Examples was evaluated in the same manner as above, and the results are shown in Tables 5 to 7 below.

division Example Reference example One 2 3 4 5 6 7 8 9 One 2 3 4 5 6 peeling
hour
(candle) 240 240 240 240 240 240 240 240 240 240 240 240 300 300 300

division comparative example One 2 3 4 5 6 7 8 9 peeling
hour
(candle) 420 420 420 240 240 240 300 300 300

division comparative example 10 11 12 14 15 peel time
(candle) 300 360 240 360 420

As shown in Tables 5 to 7, the stripper composition of the Examples includes two or more amine compounds in a specific composition and ratio, and as compared to the stripper compositions of Comparative Examples and Reference Examples, the same level or higher or better peeling force. That is, Examples 1 to 9 and Reference Examples 1 to 3 were based on a tertiary amine, and a cyclic amine was included, or a cyclic amine and a primary or secondary linear amine were included together. , it was confirmed that the peel strength was improved compared to the comparative examples. In addition, in Reference Examples 4 to 6, a small amount of a primary linear amine is included in a tertiary amine. included, and also exhibited an equivalent level of peeling force compared to the comparative example. However, Reference Examples 1 to 6 had better results than Comparative Examples, but compared to Examples 1 to 9, the peeling force was relatively poor. In other words, even if a tertiary amine and a different type of amine are included, if the combination and ratio of the specific amine of the present invention are not satisfied, the peel strength of the photoresist composition cannot be improved.

On the other hand, in the case of Examples 1 to 9, when compared with Comparative Examples and Reference Examples, all of them exhibited excellent peeling force of at least the same level as a whole.

2. Cu Oxide Removal Evaluation

(1) Preparation of the substrate for evaluation

A glass substrate on which a thin film on which copper (without pattern) was deposited was formed was prepared in a size of 5 cm × 5 cm.

(2) copper oxide removal evaluation

300 g of the stripper composition obtained in Examples and Comparative Examples was prepared, and the substrate was immersed for 60 seconds with the stripper composition in a state where the temperature was raised to 50° C. (dipping) treatment.

After the immersion, the substrate was taken out, washed with tertiary distilled water for 30 seconds, and then distilled water was dried with an air gun.

Using X-ray photoelectron spectroscopy (XPS), the copper oxide removal ability from the copper surface of the cleaned sample was evaluated.

Specifically, C, Cu, and O were measured as O/Cu after element quantification by XPS narrow scan, and the O/Cu ratio after the photoresist strip was compared in the specimen. (The smaller the O/Cu ratio number, the better the Cu oxide removal rate)

[Equation 1-1]

Cu oxide removal power = XPS narrow scan O(Oxygen) quantified number after stripping the sample with photoresist / XPS narrow scan Cu(copper) quantified number after stripping the sample with photoresist

The copper oxide removal power of the stripper compositions of Examples and Comparative Examples was evaluated in the same manner as above, and the results are shown in Tables 8 to 10 below.

division Example Reference example One 2 3 4 5 6 7 8 9 One 2 3 4 5 6 O/Cu
Ratio 0.23 0.22 0.23 0.23 0.23 0.22 0.23 0.22 0.23 0.55 0.56 0.54 0.35 0.37 0.34

division comparative example One 2 3 4 5 6 7 8 9 O/Cu
Ratio 0.61 0.62 0.61 0.55 0.56 0.54 0.41 0.39 0.40

division comparative example 10 11 12 14 15 O/Cu
Ratio 0.42 0.53 0.40 0.62 0.64

As shown in Tables 8 to 10, the stripper composition of Examples includes two or more amine compounds in specific configurations and ratios, and as compared to the stripper compositions of Comparative Examples and Reference Examples, the removal rate of Cu Oxide or more excellent at the same level. That is, Comparative Examples 1 to 9 included primary to tertiary amines or cyclic amines alone, and overall Cu oxide removal rates were inferior to those of Examples. In addition, Comparative Examples 10 to 12 do not satisfy the specific content ratio of the present invention even if they additionally include primary, secondary amines or cyclic amines with respect to the tertiary amine, so that the Cu Oxdie removal rate is poorer than that of the Examples was confirmed. In addition, Comparative Examples 14 to 15 contained deionized water or an oxolane compound, which also had poor Cu oxide removal rate and caused metal corrosion. In particular, compared to the stripper compositions of Comparative Examples 1 to 3 containing only tertiary amine, In the case of Examples 1 to 9, it was confirmed that Cu oxide removal rate was further improved by including tertiary amines and cyclic and linear amines together. In addition, in the case of Reference Examples 1 to 6 in which the tertiary amine and the cyclic amine or the linear amine were included in a specific content ratio, the level was higher than that of Comparative Examples 4 to 9, but the effect was excellent compared to Comparative Examples 1 to 3. However, Reference Examples 1 to 6 had better results than Comparative Examples, but compared to Examples 1 to 9, the Cu oxide removal rate was poor. In other words, even if a tertiary amine and a different type of amine are included, if the specific amine combination and ratio of the present invention are not satisfied, the Cu oxide removal rate cannot be improved.

On the other hand, in the case of Examples 1 to 9, when compared with the Comparative Examples as well as the Reference Examples, overall, all exhibited excellent peeling force equal to or higher than the level.

Therefore, in Examples 1 to 9, it was confirmed that the Cu Oxdie removal rate was very excellent by including a mixture of a cyclic amine and a primary or secondary amine of a specific content with respect to the tertiary amine.

From these results, the stripper composition of the embodiment is excellent in Cu oxide removal rate, it is possible to solve the film lifting defect between Cu / ITO during annealing of the ITO wiring.

3. Corrosion evaluation of copper (Cu)/molybdenum (Mo) metal lower film (Cu/Mo under-cut damage evaluation)

(1) Preparation of the substrate for evaluation

A glass substrate formed of a copper/molybdenum pattern was prepared in a size of 5 cm × 5 cm.

(2) Corrosion evaluation of copper/molybdenum metal underlayer

300 g of the stripper composition obtained in Examples and Comparative Examples was prepared, and the substrate was dipping (dipping) treated for 10 minutes with the stripper composition in a state elevated to 50 °C.

After the immersion, the substrate was taken out, washed with tertiary distilled water for 30 seconds, and then distilled water was dried with an air gun.

Cross-sections of samples for evaluation of corrosion of the lower film obtained in Examples, Reference Examples and Comparative Examples were observed using a transmission electron microscope (Helios NanoLab650). Specifically, using FIB (Focused Ion Beam), a thin slice of the sample for corrosive evaluation of the lower film was prepared and observed with an acceleration voltage of 2 kV. After forming a Pt (platinum) protection layer on the layer), a TEM flake was fabricated.

The corrosiveness of the stripper compositions of Examples, Reference Examples and Comparative Examples was evaluated in the same manner as above, and the results are shown in Tables 11 to 13 below.

division Example Reference example One 2 3 4 5 6 7 8 9 One 2 3 4 5 6 Size
(nm) <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm <20nm

division comparative example One 2 3 4 5 6 7 8 9 Size(nm) <20nm <20nm <20nm 280nm 252nm 182nm 312nm 151nm 211nm

division comparative example 10 11 12 14 15 Size(nm) 208 125 186 301 412

As shown in Tables 11 to 13, the stripper composition of Examples includes two or more amine compounds in specific configurations and ratios, compared to the stripper compositions of Comparative Examples and Reference Examples, copper (Cu) / molybdenum (Mo) metal lower Corrosiveness of the film was reduced, and it was confirmed that the Cu/Mo under-cut damage evaluation result was excellent. That is, in the stripper composition of the above example, the weight ratio of tertiary amine: at least one amine compound is within the range of 1:0.1 to 1:0.5. By satisfying the ratio, the content of other amines (cyclic amine and primary or secondary linear amine) included together with respect to the tertiary amine is relatively small, thereby preventing corrosion of the Cu/Mo metal lower layer. It has been confirmed that there is Also, in the case of the Reference Example, the corrosion performance of the Cu/Mo metal lower layer was improved compared to the Comparative Examples by using a smaller amount of a cyclic amine, a primary or a secondary amine in a specific ratio with respect to the tertiary amine. Specifically, Examples 1 to 9 and Reference Examples 1 to 3 are based on a tertiary amine, and include a cyclic amine, or a cyclic amine and a primary or secondary linear amine. It was confirmed that the power was improved. In addition, in Reference Examples 4 to 6, the secondary linear amine was also included in the tertiary amine, and thus also exhibited an equivalent level of peel strength compared to the Comparative Example.

However, Reference Examples 1 to 6 showed the same level of corrosiveness as compared to Examples 1 to 9, but as described above, the peel strength and Cu oxide removal rate of the photoresist composition could not be improved.

In addition, in the stripper compositions of Comparative Examples 4 to 9, the content of the primary and secondary amines increased, and it was confirmed that the Cu/Mo under-cut size increased and thus the corrosivity was poor. At this time, Comparative Examples 1 to 3 containing only the tertiary amine in the stripper composition showed a Cu/Mo under-cut size similar to that of Example, but it was confirmed that the peeling force and Cu oxide removal rate were poor as described above. In addition, Comparative Examples 10 to 12, with respect to the tertiary amine, even if additionally including a primary, secondary amine or cyclic amine did not satisfy the specific content ratio of the present invention, the results were poor. In addition, since Comparative Examples 14 to 15 contained deionized water or an oxolane compound, corrosion of the copper/molybdenum metal lower layer was rather caused.

From these results, it can be confirmed that the stripper composition of the embodiment is very excellent in the ability to prevent corrosion of the copper (Cu) / molybdenum (Mo) metal lower layer.

Claims (15)

two or more amine compounds;
an aprotic solvent selected from the group consisting of an amide compound, a sulfone and a sulfoxide compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen;
protic solvents; and
contains a corrosion inhibitor;
The amine compound may include a) a tertiary amine compound; and b) at least one amine compound selected from the group consisting of cyclic amines, primary amines and secondary amines;
wherein the weight ratio between a) the tertiary amine compound and b) the amine compound is 1:0.05 to 1:0.8,
A stripper composition for removing photoresist.
The method of claim 1, wherein the amine compound is
a) a tertiary amine compound and b) a secondary amine compound;
a) a tertiary amine compound, and b) a cyclic amine and a primary amine compound; or
a) a tertiary amine compound, and b) a cyclic amine and a secondary amine compound;
A stripper composition for removing a photoresist comprising a.
3. The method of claim 2,
a weight ratio between the cyclic amine compound and the primary amine compound; or
The weight ratio between the cyclic amine compound and the secondary amine compound is 1: 1 to 10, a stripper composition for photoresist removal.
According to claim 1,
After cleaning the substrate on which copper is deposited on the entire surface with a photoresist stripper composition, using X-ray photoelectron spectroscopy (XPS) to ensure that the copper oxide removal force of the cleaned substrate surface measured by Equation 1 is 0.35 or less, photo Stripper composition for removing resist:
[Equation 1]
Cu oxide removal power = XPS narrow scan O(Oxygen) quantified number after stripping the substrate with photoresist / XPS narrow scan Cu(copper) quantified number after stripping the substrate with photoresist
According to claim 1,
A stripper composition for photoresist removal comprising 0.1 to 10% by weight of the amine compound with respect to the entire stripper composition.
According to claim 1,
The tertiary amine compound is methyl diethanolamine (methyl diethanolamine; MDEA), N-butylethanolamine (N-Butyldiethanolamine, BDEA), diethylaminoethanol (Diethylaminoethanol; DEEA), and triethanolamine (Triethanolamine; TEA) consisting of A stripper composition for photoresist removal, comprising one or more compounds selected from the group.
According to claim 1,
The primary amine is (2-aminoethoxy)-1-ethanol [(2-aminoethoxy)-1-ethanol; AEE], aminoethyl ethanolamine (aminoethyl ethanol amine; AEEA), isopropanolamine (MIPA) and ethanolamine (ethanolamine; MEA) comprising at least one compound selected from the group consisting of, a photoresist stripper composition for removal .
According to claim 1,
The secondary amine is diethanolamine (DEA), triethylene tetraamine (TETA), N-methylethanolamine (N-metylethanloamine; N-MEA), diethylene triamine (Diethylene triamine; DETA) , And diethylene triamine (Diethylene triamine; DETA) comprising at least one compound selected from the group consisting of, a photoresist stripper composition for removal.
According to claim 1,
The cyclic amine is 1-imidazolidine ethanol (1-imidazolidine ethanol), 4-imidazolidine ethanol (4-imidazolidine ethanol), hydroxyethylpiperazine (HEP) and aminoethylpiperazine (aminoethylpiperazine) A stripper composition for photoresist removal comprising at least one compound selected from the group consisting of.
According to claim 1,
The amide compound is a photoresist stripper composition comprising a compound of Formula 1 below:
[Formula 1]

In Formula 1,
R ₁ is hydrogen, a methyl group, an ethyl group, or profile,
R ₂ is a methyl group or an ethyl group,
R ₃ is hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms,
R ₁ and R ₃ may be bonded to each other to form a ring.
According to claim 1,
The amide compound is diethylformamide (N,N-Diethylformamide), dimethylacetamide (N,N-Dimethylacetamide), N-methylformamide (N-Methylformamide), N-methylpyrrolidone (1-Methyl- 2-pyrrolidinone), N-ethylformamide (N-Formylethylamine), or a mixture thereof, including a photoresist stripper composition for removal.
According to claim 1,
The amide compound includes N-methylformamide (N-Methylformamide) or N-methylpyrrolidone (1-Methyl-2-pyrrolidinone), a photoresist stripper composition for removal.
According to claim 1,
The protic solvent is a stripper composition for photoresist removal comprising at least one selected from the group consisting of alkylene glycol monoalkyl ether-based compounds.
According to claim 1,
0.1 to 10% by weight of two or more amine compounds;
10 to 80% by weight of an aprotic solvent selected from the group consisting of an amide compound, a sulfone and a sulfoxide compound in which 1 to 2 straight or branched alkyl groups having 1 to 5 carbon atoms are substituted with nitrogen;
10 to 80% by weight of a protic solvent; and
0.01 to 10% by weight of a corrosion inhibitor;
A stripper composition for removing photoresist comprising a.
Using the stripper composition for removing the photoresist of claim 1, comprising the step of peeling the photoresist, a method of peeling a photoresist.

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