KR20220017136A - Pellicle Using 1-dimensinal Materials for Extreme Ultraviolet(EUV) Lithography and Method for Fabricating of the same - Google Patents

Abstract

The present invention relates to a pellicle for extreme ultraviolet lithography using 1-dimensinal (1D) materials and a manufacturing method thereof. According to the present invention, the pellicle for extreme ultraviolet lithography comprises a central layer including a first layer and a second layer. The first layer is made of a material containing silicon and the second layer is made of nanotubes. The first layer can be formed of any one of SiN_x, SiC_x, BN_x, MoSi_x, and MoSi_xC_y. The nanotubes forming the second layer can be single-walled nanotubes, double-walled nanotubes, or triple or more multi-walled nanotubes. Accordingly, thermal and chemical stability of the pellicle can be increased while minimizing loss of the optical properties of the pellicle.

Description

Pellicle Using 1-dimensinal Materials for Extreme Ultraviolet (EUV) Lithography and Method for Fabricating of the same}

The present invention relates to a pellicle for extreme ultraviolet lithography and a method for manufacturing the same, and more particularly, to a pellicle satisfying a transmittance of 88% or more and a reflectance of 0.1% or less with respect to extreme ultraviolet exposure light, and a method for manufacturing the same.

The development of exposure technology called photo-lithography has enabled high integration of semiconductor integrated circuits. In order to form a finer circuit pattern on the wafer, the resolution of the exposure equipment, also called resolution, needs to be increased. If a fine pattern exceeding the resolution limit is transferred, light interference due to diffraction and scattering of light occurs, resulting in a problem in which a distorted image different from the original mask pattern is transferred.

The currently commercialized exposure process forms a fine pattern on the wafer by performing the transfer process with exposure equipment using an ArF wavelength of 193 nm. immersion lithography using a liquid medium with a higher refractive index than air Various methods are being developed, such as phase shift technology to improve the image quality, and optical phase correction to correct the phenomenon that the design pattern size is smaller than the design pattern size or the tip is rounded due to interference and diffraction effects of light.

However, with the exposure technology using the ArF wavelength, it is difficult to realize a more miniaturized circuit line width of 32 nm or less, and production cost is increased and process complexity is inevitably increased. For this reason, EUV lithography technology using Extreme Ultra-Violet (hereinafter referred to as EUV) light, which uses 13.5 nm wavelength, which is very short compared to 193 nm wavelength, as the main exposure wavelength, is attracting attention as a next-generation process.

On the other hand, in the lithography process, a photomask is used as an original plate for patterning, and the pattern on the photomask is transferred to a wafer. If impurities such as particles or foreign substances are attached to the photomask, This impurity may absorb or reflect the exposure light, thereby damaging the transferred pattern, which may lead to deterioration in performance or yield of the semiconductor device.

Accordingly, in order to prevent impurities from adhering to the surface of the photomask, a method of attaching a pellicle to the photomask is used. The pellicle is disposed on the surface of the photomask, and even if impurities are attached to the pellicle, during the photolithography process, the focus is on the pattern of the photomask, so the impurities on the pellicle are not in focus and are not transferred to the wafer surface. Recently, since the size of impurities that may affect pattern damage is also reduced according to the miniaturization of the circuit line width, the role of the pellicle for protecting the photomask is becoming more important.

An object of the present invention is to provide a pellicle for extreme ultraviolet lithography capable of improving thermal and chemical stability of a pellicle while minimizing loss of optical properties of the pellicle, and a method for manufacturing the same.

The pellicle for extreme ultraviolet lithography according to the present invention for achieving the above object includes a central layer including a first layer and a second layer, wherein the first layer is formed of a material containing silicon, and the second The layer is characterized in that it is formed of nanotubes.

The first layer may be formed of any one of SiNx, SiCx, BNx, MoSix, and MoSixCy.

The material composition ratio of the first layer is SiNx (x=0.5~2), SiCx (x=0.1~4), BNx (x=0~2), MoSix (x=0~2.5), MoSixCy (x) for each material. =0-2, y=0.1-2) is preferable.

The second layer is a carbon nanotube (CNT, Carbon Nanotube), a boron nitride nanotube (BNNT, Boron Nitride Nanotube), a silicon carbide nanotube (SiCNT, Silicon Carbide NanoTube), a boron carbon nanotube (BCNNT, Boron Carbon Nitride). NanoTube) may be formed of any one material.

The nanotube constituting the second layer may have a single-walled nanotube, double-walled nanotube, or triple or more multi-walled nanotube structure.

Each of the nanotubes has a structure in which a part of its constituent elements is substituted with one or more of boron (B), nitrogen (N), phosphorus (P), sulfur (S), and oxygen (O).

In each of the nanotubes, it is preferable that the ratio of the element to be substituted is within 20% of the total element element.

The first layer and the second layer are MoSix/CNT, MoSix/BNNT, MoSix/SiCNT, MoSix/BCNNT, SiCx/CNT, SiCx/BNNT, SiCx/BCNNT, BNx/CNT, BNx/SiCNT, BNx/BCNNT , SiNx/CNT, SiNx/BNNT, SiNx/SiCNT, SiNx/BCNNT, MoSixCy/CNT, MoSixCy/BNNT, MoSixCy/SiCNT, and MoSixCy/BCNNT.

The central layer preferably has a transmittance of 88% or more and a reflectance of 0.1% or less with respect to the extreme ultraviolet light.

The central layer has a thickness of 150 nm or less.

The first layer has a thickness of 1 to 10 nm, and the second layer has a thickness of 30 to 70 nm.

The thickness ratio of the first layer to the second layer is preferably 0.02 to 0.3.

The first layer forms a lower layer on the pellicle frame and the second layer forms an upper layer on the pellicle frame. Conversely, the first layer may be configured to form an upper layer on the pellicle frame, and the second layer may be configured to form a lower layer on the pellicle frame.

A capping layer having a single-layer structure or a multi-layer structure may be formed on at least one of an upper portion and a lower portion of the central layer.

The capping layer is, chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), niobium (Nb), silicon (Si), ruthenium (Ru), a metal material including at least one of lanthanum (La) and cerium (Ce); a metal silicide including silicon (Si) in the metal material; a metal compound MNxByCzOn (x, y, z, n=0-6) in which one or more light elements of C, O, N, and B are bonded to the metal material; a metal silicide compound MSiqNxByCzOn (q=0.5~3; x, y, z, n=0~6) in which silicon and one or more light elements of C, O, N, and B are bonded to the metal material; any one of BN, BxC (x=0-5); Graphen, a two-dimensional material comprising at least one of h-GN; and a transition metal dichalcogenide MX2 material comprising at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2; It may be formed of any one material.

According to another aspect of the present invention, the method comprising: a) forming an etching stop layer on a support substrate; b) forming a central layer on the etch stop layer; c) forming an upper etch protection layer on an upper portion of the central layer, and forming a lower etch protection layer on a lower portion of the support substrate; d) forming a lower etch protection layer pattern by patterning the lower etch protection layer; e) forming a pellicle frame by etching the support substrate and the etch stop layer using the lower etch protection layer pattern as an etch mask; and f) removing the upper etch protection layer and the lower etch protection layer pattern;

According to another aspect of the present invention, the method comprising: a) sequentially forming a separation layer, a central layer, and a support layer on a substrate; b) peeling the central layer and the support layer from the separation layer; c) transferring and attaching the center layer and the support layer on a pellicle frame; and d) removing the support layer; is provided.

Preferably, the separation layer is formed of an organic material or an inorganic material soluble in a predetermined solvent, and the support layer is formed of an organic material having chemical stability with respect to a solvent reacting with the separation layer.

According to another aspect of the present invention, a method comprising: a) immersing a membrane filter in a nanotube solution; b) applying a negative pressure to the membrane filter to form a second layer of the central layer on the membrane filter; c) forming a first layer of the central layer on the second layer; d) separating the central layer comprising the first layer and the second layer; and e) transferring and attaching the separated central layer to the pellicle frame.

In step d), the central layer may be separated through taping.

According to the present invention, there is provided a pellicle for extreme ultraviolet lithography capable of improving the thermal and chemical stability of the pellicle while minimizing the loss of optical properties of the pellicle, and a method for manufacturing the same.

1 is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to a first embodiment of the present invention.
2 is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to a second embodiment of the present invention.
3 to 6 are views sequentially illustrating a manufacturing process of the pellicle according to the first embodiment of FIG.
7 to 10 are views sequentially showing another example of the manufacturing process of the pellicle according to the first embodiment of FIG.
11 and 12 are views sequentially showing another example of the manufacturing process of the pellicle according to the first embodiment of FIG.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to a first embodiment of the present invention.

The pellicle 100 for lithography includes a pellicle unit including a central layer 110 . The central layer 110 includes a first layer 111 formed below and a second layer 112 formed on the first layer 111 .

The first layer 111 of the central layer 110 is formed of a material including silicon, preferably, any one of SiNx, SiCx, BNx, MoSix, and MoSixCy in order to secure transmittance for EUV exposure light. The material composition ratio of the first layer 111 is preferably SiNx (x=0.5~2), SiCx (x=0.1~4), BNx (x=0~2), MoSix (x=0~2.5) for each material. ), MoSixCy (x=0~2, y=0.1~2).

The second layer 112 of the central layer 110 functions to secure the mechanical strength of the central layer 110 . The second layer 112 is a carbon nanotube (CNT, Carbon Nanotube), a boron nitride nanotube (BNNT, Boron Nitride Nanotube), a silicon carbide nanotube (SiCNT, Silicon Carbide NanoTube), a boron carbon nanotube (BCNNT, Boron). Carbon Nitride NanoTube) is composed of a nanotube layer formed of any one of the nanotube materials. The nanotube constituting the second layer 112 may have a single-walled nanotube, double-walled nanotube, or triple or more multi-walled nanotube structure. .

In addition, each nanotube may have a structure in which a part of its constituent elements is substituted with one or more elements of boron (B), nitrogen (N), phosphorus (P), sulfur (S), and oxygen (O). In this case, it is preferable that the ratio of the element to be substituted is within 20% of the total element. For example, in the case of CNT, it may be composed of a CNx (x=0.01-0.2) composition in which some of C is substituted with N. That is, under the premise that the nanotube structure is maintained, any form substituted with one or more of the elements listed above within 20% of the total elements constituting the nanotube is included in the scope of the nanotube described in the present invention.

According to the composition of the first layer 111 and the second layer 112, the central layer 110 may include MoSix/CNT, MoSix/BNNT, MoSix/SiCNT, MoSix/BCNNT; SiCx/CNT, SiCx/BNNT, SiCx/BCNNT, BNx/CNT, BNx/SiCNT, BNx/BCNNT, SiNx/CNT, SiNx/BNNT, SiNx/SiCNT, SiNx/BCNNT, MoSixCy/CNT, MoSixCy/BNNT, MoSixCy/BNNT, MoSixCy/BNNT It may be formed in any one structure of SiCNT and MoSixCy/BCNNT.

The central layer 110 has a transmittance of 88% or more and a reflectance of 0.1% or less with respect to the extreme ultraviolet exposure light. The central layer 110 has a thickness of 150 nm or less, preferably 100 nm or less. The first layer 111 has a thickness of 30 nm or less, preferably 1 to 10 nm. The second layer 112 has a thickness of 150 nm or less, preferably in the range of 30 to 70 nm. The thickness of the first layer 111 and the second layer 112 of the central layer 110 may be configured in various combinations to have the transmittance and reflectance described above. The thickness ratio of the first layer 111 and the second layer 112 of the central layer 110 preferably has a first layer/second layer=0.02-0.3 range.

Meanwhile, in FIG. 1 , the first layer 111 is configured to form a lower layer of the central layer 110 and the second layer 112 is configured to form an upper layer of the central layer 110 , but on the contrary, the first layer 111 is It may be configured to form an upper layer of the central layer 110 and the second layer 112 to form a lower layer of the central layer 110 .

Although not shown in FIG. 1, the pellicle 100 for extreme ultraviolet lithography according to the present invention serves to support the pellicle part and facilitates handling and transport when the pellicle 100 is manufactured. ) is included. The pellicle frame 211 is formed of a material capable of dry/wet etching, for example, a quartz, SOI, or silicon (Si) wafer may be formed using an etching process or microfabrication technology. Hereinafter, the pellicle 100 according to the present invention, which will be described later, includes the pellicle frame 211 even if there is no specific reference to the pellicle frame 211 .

2 is a cross-sectional view illustrating a pellicle for extreme ultraviolet lithography according to a second embodiment of the present invention.

The pellicle part of the pellicle 100 for extreme ultraviolet lithography according to the present invention includes a capping layer 120 formed on an upper surface and a lower surface of the central layer 110 . The capping layer 120 may be formed on only one of the upper and lower surfaces of the central layer 110, and the capping layer 120 on the upper and lower surfaces may be composed of a plurality of layers having different compositions or different composition ratios, respectively. may be

The capping layer 120 protects the central layer 110 from chemical reactions occurring in the extreme ultraviolet lithography environment, strengthens the mechanical strength of the pellicle 100, and increases the thermal stability of the pellicle 100 through heat radiation. do To this end, the capping layer 120 is made of chemically stable and mechanically excellent materials having low reactivity with hydrogen (H) radicals and oxygen (O). Specifically, the capping layer 120 is, chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium ( Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), niobium (Nb), silicon (Si), luce a metal material including at least one of nium (Ru), lanthanum (La), and cerium (Ce); a metal silicide including silicon (Si) in the metal material; a metal compound MNxByCzOn (x, y, z, n=0-6) in which one or more light elements of C, O, N, and B are bonded to the metal material; a metal silicide compound MSiqNxByCzOn (q=0.5~3; x, y, z, n=0~6) in which silicon and one or more light elements of C, O, N, and B are bonded to the metal material; any one of BN, BxC (x=0-5); Graphen, a two-dimensional material comprising at least one of h-GN; and a transition metal dichalcogenide MX2 material comprising at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2; It may consist of any one of.

As an example, the capping layer 120 may be formed of any one of SiNx, SiCx, BNx, MoSix, and MoSixCy. At this time, preferably, for each material, SiNx (x=0.5~2), SiCx (x=0.1~4), BNx (x=0~2), MoSix (x=0~2.5), MoSixCy (x=0~ 2, y=0.1~2), MNxByCzOn (x, y, z, n=0~6).

The capping layer 120 may have a thickness of 15 nm or less, preferably 10 nm or less, and may be formed in various thicknesses in consideration of the mechanical strength and optical properties of the pellicle 100 . The capping layer 120 may be preferably formed to have a thickness that minimizes reflectance and scattering of the extreme ultraviolet light of the pellicle part. For example, the capping layer 120 may be formed to have an optical thickness causing destructive interference with extreme ultraviolet exposure light reflected from one or more layers other than the capping layer 120 .

3 to 6 are views sequentially illustrating a manufacturing process of the pellicle according to the first embodiment of FIG. 1 .

Referring to FIG. 3 , an etching stop layer 140 and a center layer 110 are sequentially formed on a support substrate 210 made of a silicon substrate. The second layer 112 of the central layer 110 is a nanotube thin film formed by dispersing chemically synthesized nanotubes in a solvent, spray coating, spin coating, vacuum filtering, or chemical vapor deposition. It can be formed by exfoliating and transferring to the first layer 111 , or directly forming a film on the first layer 111 through chemical vapor deposition or physical vapor deposition.

Referring to FIG. 4 , an upper etch protection layer 310 is formed on the upper surface of the central layer 110 , and a lower etch protection layer 320 is formed on the lower surface of the support substrate 210 .

Referring to FIG. 5 , the lower etch protection layer 320 is first patterned to form a lower etch protection layer pattern 320a. Here, the lower etch protection layer pattern 320a is patterned through dry or wet etching. Then, the support substrate 210 is etched by dry etching or a wet etching process using KOH, TMAH, etc. using the lower etch protection layer pattern 320a as an etch mask to form a support layer pattern 210a, and an etch stop layer By etching 140, an etching stop layer pattern 140a is formed so that the lower surface of the center layer 110 of the pellicle part is exposed. The support layer pattern 320a and the etching stop layer pattern 140a constitute the pellicle frame 211 supporting the pellicle part thereon.

Referring to FIG. 6 , the upper etch protection layer 310 and the lower etch protection layer pattern 320a are removed by a dry etching or wet etching process.

In the state of FIG. 6, by additionally forming one or more capping layers 120 to cover any one of the upper and lower surfaces of the exposed pellicle central layer 110, a pellicle having a structure as shown in FIG. 2 can be manufactured. . In the case of the capping layer 120 on the central layer 110 , before performing the process of FIG. 4 in the state of FIG. 3 , that is, before forming the upper etch protection layer 310 , on the upper surface of the central layer 110 . A capping layer 120 may be additionally formed.

The etching stop layer 140 is not etched in the step of FIG. 5 of etching the lower surface of the support substrate 210, and is etched together with the upper etch protection layer 310 and the lower etch protection layer pattern 320a in the step of FIG. can

The etch stop layer 140 , the upper etch protection layer 310 , and the lower etch protection layer 320 may include a material having a high etch selectivity with the support substrate 210 in dry and wet etching, for example, at least one of SiOx, SiNx, and SiNxOy. It may be formed of a silicon compound, a transition metal containing Cr, Ti, or Zr, or a transition metal compound containing CrOx, CrNx, CrNxOy, TiOx, TiNx, or TiNxOy. In addition, the etch stop layer 140 , the upper etch protection layer 310 , and the lower etch protection layer 320 may be formed in a structure of two or more layers.

The above-described etching stop layer 140, the central layer 110, the capping layer 120, the upper etch protection layer 310, the lower etch protection layer 320 is a chemical vapor deposition method (Chemical Vapor Deposition: CVD), sputtering ( Physical vapor deposition including sputtering (Physical Vapor Deposition: PVD), atomic layer deposition (ALD), Thermal Oxidation, Annealing, Chemical Synthesis, spray coating ( Spray Coating), spin coating, thin film transfer, vacuum filtration, and the like.

The etching stop layer 140, the central layer 110, the capping layer 120, the upper etch protection layer 310, and the lower etch protection layer 320 are sputtering targets ( Target), or using a sputtering target of metal:silicon=1:0.1~3 composition, or silicon:compound (at least one of O, C, N)=1:0.1~4 composition using a sputtering target , can be formed through sputtering at a temperature of 25 ~ 600 ℃.

Each layer formed into a film, or the entire pellicle 100 that has been produced, is heat treated at a temperature of 150° C. or higher in an atmosphere of nitrogen (N), argon (Ar), hydrogen (H), hydrocarbon (Hydrocabon), or a mixture thereof. can be

7 to 10 are views sequentially illustrating another example of the manufacturing process of the pellicle according to the first embodiment of FIG. 1 .

Referring to FIG. 7 , the separation layer 150 , the central layer 110 , and the support layer 330 are sequentially formed on the substrate 220 .

The separation layer 150 is formed of an organic material soluble in acetone, ethanol, etc., or an organic material in which some of the binding elements are soluble in water such as PTAS, or an inorganic material soluble in water, spray coating or spin coating It is formed using the (Spin Coating) method.

The support layer 330 is formed of an organic material having chemical stability with respect to a solvent reacting with the separation layer 150, such as PMMA, and is formed using a spray coating method or a spin coating method. The support layer 330 functions to prevent damage by maintaining the outer shape of the central layer 110 in the following process.

Referring to FIG. 8 , the central layer 110 to which the support layer 130 is attached is peeled off from the separation layer 150 by immersing the product manufactured as shown in FIG. 7 in a solvent that chemically reacts with the separation layer 150 .

Referring to FIG. 9 , the peeled center layer 110 and the support layer 330 are transferred to and attached to the structure of the pellicle frame 211 that has been manufactured in advance. Here, the pellicle frame 211 may be manufactured by forming a quartz, SOI, or silicon (Si) wafer capable of dry/wet etching using an etching process or microfabrication technology, or metal processing.

Referring to FIG. 10 , the production of the pellicle for extreme ultraviolet lithography of the present invention is completed by removing the support layer 330 by a dry etching or wet etching process.

In this embodiment, the contents described in the description of FIGS. 3 to 7 , that is, the additional formation of the capping layer 120 , the method of forming each layer such as the central layer 110 and the capping layer 120 , and each layer or Heat treatment for the entire pellicle may be equally applied.

11 and 12 are views sequentially illustrating another example of a manufacturing process of a pellicle according to the first embodiment of FIG. 1 .

Referring to FIG. 11 , the central layer 110 is formed on the membrane filter 230 . Specifically, by applying negative pressure to the plate surface of the membrane filter 230 in a state in which the membrane filter 230 is immersed in a CNT solution mixed with nanotubes, specifically, CNTs in a solvent, the CNT solution is converted into the membrane filter. (230) to pass. Accordingly, the second layer 112 made of CNT material is formed on the membrane filter 230 . The central layer 110 is formed on the membrane filter 230 by forming the first layer 111 on the membrane filter 230 on which the second layer 112 is formed.

Referring to FIG. 12 , the central layer 110 formed on the membrane filter 230 is separated from the membrane filter 230 through taping, and transferred to the pre-fabricated pellicle frame 211 structure and attached thereto. The pellicle frame 211 may be manufactured by forming a quartz, SOI, or silicon (Si) wafer capable of dry/wet etching using an etching process or microfabrication technology, or by metal processing.

In this embodiment, the contents described in the description of FIGS. 3 to 7 , that is, the additional formation of the capping layer 120 , the method of forming each layer such as the central layer 110 and the capping layer 120 , and each layer or Heat treatment for the entire pellicle may be equally applied.

As mentioned above, although the present invention is specifically described through the structure of the present invention with reference to the drawings, the structure is used only for the purpose of illustration and description of the present invention and limits the meaning or the scope of the present invention described in the claims. It is not intended to be limiting. Therefore, those skilled in the art will understand that various modifications and equivalent other structures are possible from the structure. Therefore, the true technical protection scope of the present invention will have to be determined by the technical matters of the claims.

100: pellicle 110: central layer
111: first floor 112: second floor
120: capping layer 140: etch stop layer
150: separation layer 210: support substrate
220: substrate 230: membrane filter
211: pellicle frame 310: upper etch protection layer
320: lower etch protection layer 330: support layer

Claims (21)

A central layer comprising a first layer and a second layer,
The first layer is formed of a material containing silicon, and the second layer is a pellicle for extreme ultraviolet lithography, characterized in that it is formed of a nanotube.
The method of claim 1,
The first layer is a pellicle for extreme ultraviolet lithography, characterized in that it is formed of any one of SiNx, SiCx, BNx, MoSix, and MoSixCy.
3. The method of claim 2,
The material composition ratio of the first layer is SiNx (x=0.5~2), SiCx (x=0.1~4), BNx (x=0~2), MoSix (x=0~2.5), MoSixCy (x) for each material. = 0 to 2, y = 0.1 to 2) pellicle for extreme ultraviolet lithography, characterized in that.
The method of claim 1,
The second layer is carbon nanotube (CNT, Carbon Nanotube), boron nitride nanotube (BNNT, Boron Nitride Nanotube), silicon carbide nanotube (SiCNT, Silicon Carbide NanoTube), boron carbon nanotube (BCNNT, Boron Carbon Nitride) NanoTube) pellicle for extreme ultraviolet lithography, characterized in that it is formed of any one material.
5. The method of claim 4,
The nanotube constituting the second layer is a single-walled nanotube, a double-walled nanotube, or a triple or more multi-walled nanotube, characterized in that it has a structure pellicle for extreme ultraviolet lithography.
5. The method of claim 4,
Each of the nanotubes has a structure in which some of its constituent elements are substituted with one or more elements of boron (B), nitrogen (N), phosphorus (P), sulfur (S), and oxygen (O) Pellicle for extreme ultraviolet lithography.
7. The method of claim 6,
Each of the nanotubes is a pellicle for extreme ultraviolet lithography, characterized in that the ratio of the element to be substituted is within 20% of the total element element.
The method of claim 1,
The first layer and the second layer are MoSix/CNT, MoSix/BNNT, MoSix/SiCNT, MoSix/BCNNT, SiCx/CNT, SiCx/BNNT, SiCx/BCNNT, BNx/CNT, BNx/SiCNT, BNx/BCNNT , SiNx/CNT, SiNx/BNNT, SiNx/SiCNT, SiNx/BCNNT, MoSixCy/CNT, MoSixCy/BNNT, MoSixCy/SiCNT, MoSixCy/BCNNT pellicle for extreme ultraviolet lithography, characterized in that it has any one structure.
The method of claim 1,
The central layer is a pellicle for extreme ultraviolet lithography, characterized in that it has a transmittance of 88% or more and a reflectance of 0.1% or less with respect to the extreme ultraviolet exposure light.
10. The method of claim 9,
The central layer is a pellicle for extreme ultraviolet lithography, characterized in that it has a thickness of 150 nm or less.
11. The method of claim 10,
The first layer has a thickness of 1 ~ 10nm, the second layer is a pellicle for extreme ultraviolet lithography, characterized in that it has a thickness of 30 ~ 70nm.
11. The method of claim 10,
The pellicle for extreme ultraviolet lithography, characterized in that the thickness ratio of the first layer to the second layer is 0.02 to 0.3.
The method of claim 1,
The first layer constitutes a lower layer on the pellicle frame and the second layer forms an upper layer on the pellicle frame.
The method of claim 1,
The first layer constitutes an upper layer on the pellicle frame and the second layer forms a lower layer on the pellicle frame.
The method of claim 1,
a capping layer having a single-layer structure or a multi-layer structure formed on at least one of an upper portion and a lower portion of the central layer;
Pellicle for extreme ultraviolet lithography, characterized in that it further comprises.
16. The method of claim 15,
The capping layer is
Chromium (Cr), Aluminum (Al), Cobalt (Co), Tungsten (W), Molybdenum (Mo), Vanadium (V), Palladium (Pd), Titanium (Ti), Platinum (Pt), Manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), niobium (Nb), silicon (Si), ruthenium (Ru), lanthanum (La) , a metal material containing at least one of cerium (Ce);
a metal silicide including silicon (Si) in the metal material;
a metal compound MNxByCzOn (x, y, z, n=0-6) in which one or more light elements of C, O, N, and B are bonded to the metal material;
a metal silicide compound MSiqNxByCzOn (q=0.5~3; x, y, z, n=0~6) in which silicon and one or more light elements of C, O, N, and B are bonded to the metal material;
any one of BN, BxC (x=0-5);
Graphen, a two-dimensional material comprising at least one of h-GN; and
a transition metal dichalcogenide MX2 material comprising at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2;
A pellicle for extreme ultraviolet lithography, characterized in that it is formed of any one material.
A method for manufacturing the pellicle for extreme ultraviolet lithography according to claim 1, comprising:
a) forming an etch stop layer on the support substrate;
b) forming a central layer on the etch stop layer;
c) forming an upper etch protection layer on an upper portion of the central layer, and forming a lower etch protection layer on a lower portion of the support substrate;
d) forming a lower etch protection layer pattern by patterning the lower etch protection layer;
e) forming a pellicle frame by etching the support substrate and the etch stop layer using the lower etch protection layer pattern as an etch mask; and
f) removing the upper etch protection layer and the lower etch protection layer pattern;
A method for manufacturing a pellicle for extreme ultraviolet lithography, comprising:
A method for manufacturing the pellicle for extreme ultraviolet lithography according to claim 1, comprising:
a) sequentially forming a separation layer, a central layer, and a support layer on a substrate;
b) peeling the central layer and the support layer from the separation layer;
c) transferring and attaching the center layer and the support layer on a pellicle frame; and
d) removing the support layer;
A method of manufacturing a pellicle for extreme ultraviolet lithography, comprising a.
19. The method of claim 18,
The separation layer is formed of an organic or inorganic material soluble in a predetermined solvent,
The support layer is a method for producing a pellicle for extreme ultraviolet lithography, characterized in that it is formed of an organic material that has secured chemical stability with respect to a solvent reacting with the separation layer.
A method for manufacturing the pellicle for extreme ultraviolet lithography according to claim 1, comprising:
a) immersing the membrane filter in the nanotube solution;
b) applying a negative pressure to the membrane filter to form a second layer of the central layer on the membrane filter;
c) forming a first layer of the central layer on the second layer;
d) separating the central layer comprising the first layer and the second layer; and
e) transferring and attaching the separated central layer to the pellicle frame;
A method of manufacturing a pellicle for extreme ultraviolet lithography, comprising a.
21. The method of claim 20,
In step d), the method of manufacturing a pellicle for extreme ultraviolet lithography, characterized in that the central layer is separated through taping.

Images