KR20220005201A - Wafer processing apparatus and thin film deposition method using the same - Google Patents

Abstract

In accordance with the present invention, provided are a substrate treatment apparatus capable of forming a thin film having a uniform thickness and a dense film quality at a low temperature, and a thin film deposition method using the same. In accordance with an embodiment, the substrate treatment apparatus includes: a chamber having a plurality of treatment spaces provided therein; substrate support parts which are formed in the plurality of treatment spaces, respectively, and in which substrates are separately placed; a gas spray part matched with each of the plurality of treatment spaces, and installed in the chamber to be opposed to each of the substrate support parts such that process gas is sprayed onto the substrate support parts; a substrate transfer part transferring a substrate from one of the plurality of treatment spaces to another treatment space; a laser anneal part installed in the chamber to be opposed to the substrate support part matched with at least one of the plurality of treatment spaces so as to radiate a laser beam to the substrate placed on the substrate support part; a power supply part connected with the gas spray part to provide high-frequency power; and a control part controlling the laser anneal part such that the laser anneal part performs annealing by radiating the laser beam to the substrate during a procedure in which the substrate transfer part transfers the substrate from a first treatment space among the plurality of treatment spaces, which is adjacent to one side of a second treatment space in which the laser anneal part is installed, to a third treatment space, which is adjacent to the other side of the second treatment space, via the second treatment space.

Description

Substrate processing apparatus and thin film deposition method using the same

The present invention relates to a thin film forming technique, and more particularly, to a substrate processing apparatus and a thin film deposition method using the same.

As the size of the semiconductor integrated device becomes smaller and the shape becomes more complicated, a technology for forming a uniform and thin thin film on the lower structure having a high step coverage and a large aspect ratio is required.

Accordingly, an atomic layer deposition (ALD) method is used that precisely controls the thickness of a thin film using a self-controlled reaction that takes place on the substrate surface by injecting a precursor and a reactant in time division while using a chemical vapor deposition reaction. . In addition, in order to improve the reaction rate between the precursor and the reactant and to improve the film quality of the deposited thin film, a plasma ALD technology in which the plasma technology is applied to the ALD process has been developed.

Nevertheless, as the semiconductor pattern is refined and densified, depositing a thin film with a uniform thickness on the concave portion, sidewall, and upper portion of the pattern still remains a problem to be solved.

SUMMARY OF THE INVENTION An aspect of the present invention is to provide a substrate processing apparatus capable of forming a thin film having a uniform thickness and a dense film quality at a low temperature and a thin film deposition method using the same.

A method for depositing a thin film according to an embodiment of the present invention includes: an adsorption step of supplying a first source gas through a gas supply unit at an upper portion of a chamber to adsorb the first source gas onto a substrate; a reduction step of stopping the supply of the first source gas and reducing the first source gas by applying a high-frequency power to the gas supply unit while supplying the reducing gas to generate plasma; a film forming step of supplying a second source gas to react the first source gas with the second source gas; and a laser annealing step of performing annealing by irradiating laser light to the substrate.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber having a plurality of processing spaces therein; a substrate support unit formed in each of the plurality of processing holes to receive a substrate; a gas injection unit corresponding to each of the plurality of processing spaces and installed in the chamber opposite to each of the substrate supporting units to inject a process gas onto the substrate supporting unit; a substrate transfer unit for transferring the substrate from one processing space to another processing space among the plurality of processing spaces; a laser annealing unit installed in the chamber opposite to the substrate supporting unit to irradiate the laser beam to the substrate seated on the substrate supporting unit corresponding to at least one processing space among the plurality of processing spaces; a power supply unit connected to the gas injection unit to provide high-frequency power; and the substrate transfer unit moves the second processing space from a first processing space adjacent to one side of the second processing space in which the laser annealing unit is installed among the plurality of processing spaces to a third processing space adjacent to the other side of the second processing space. The laser annealing unit may include a control unit controlling the annealing to be performed by irradiating a laser light to the substrate being transferred while the substrate is transferred via the .

A substrate processing apparatus according to an embodiment of the present invention includes a chamber having a plurality of processing spaces therein; a substrate support portion provided to be rotatable in the processing space and having a plurality of substrate seating grooves formed on an upper surface of the substrate to be seated; a gas ejection unit disposed above the processing space to face the substrate support unit, and supplying different gases to the substrate support unit, the plurality of gas ejection units being disposed in a circumferential direction to have a plurality of gas ejection regions; At least one of the plurality of gas injection units may include: a laser annealing unit installed on the upper part of the chamber to irradiate a laser beam onto the substrate seating groove; a power supply unit connected to at least one of the plurality of gas injection units to provide high frequency power; and after a thin film is deposited on the substrate while passing through the plurality of gas injection regions by the rotation of the substrate support unit, the substrate is irradiated with laser light while passing through the laser annealing unit while the substrates are rotated and moved to irradiate the substrate. It may include a control unit that controls to perform annealing while scanning.

The present invention based on the means for solving the above problems has an effect of forming a thin film having a uniform thickness and a dense film quality on a substrate having a lower pattern formed thereon.

In addition, it is possible to form a thin film of excellent and uniform film quality through a low-temperature process of 550° C. or less on the dense and fine lower pattern, thereby improving the reliability of the subsequent process.

1 is a plan view illustrating a substrate processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating the substrate processing apparatus according to the first embodiment of the present invention taken along line I-I' shown in FIG. 1 .
3 is a flowchart illustrating a thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention.
4A is a timing diagram for explaining a thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention.
4B and 4C are timing diagrams for explaining a modified example of a thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention.
5 is a plan view illustrating a substrate processing apparatus according to a second embodiment of the present invention.
6 is a cross-sectional view illustrating a substrate processing apparatus according to a second embodiment of the present invention taken along line I-I' shown in FIG. 5 .
7 is a flowchart illustrating a thin film deposition method using a substrate processing apparatus according to a second exemplary embodiment of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Sizes and relative sizes of layers and regions in the drawings may be exaggerated for clarity of description. Like reference numerals refer to like elements throughout.

An embodiment of the present invention, which will be described later, is to provide a substrate processing apparatus capable of forming a thin film having a uniform thickness and a dense film quality at a low temperature, and a thin film deposition method using the same. Specifically, the embodiment of the present invention forms a thin film at a low temperature (eg, in the range of room temperature to 550 ℃), but has a thickness uniformity and dense film quality equal to or higher than a thin film formed at a high temperature (eg, 550 ℃ or more) An object of the present invention is to provide a substrate processing apparatus that can be implemented and a thin film deposition method using the same. To this end, the substrate processing apparatus and the thin film deposition method using the same according to an embodiment of the present invention deposit a thin film by repeatedly performing a unit cycle a plurality of times, and the unit cycle may be configured to include a laser annealing step. For reference, a substrate processing apparatus according to a first embodiment of the present invention, which will be described later, relates to a substrate processing apparatus capable of time division atomic layer deposition and laser annealing, and a thin film deposition method using the same. Further, the substrate processing apparatus according to the second embodiment of the present invention relates to a substrate processing apparatus capable of space-division atomic layer deposition and laser annealing, and a thin film deposition method using the same.

Hereinafter, a substrate processing apparatus and a thin film deposition method using the same according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a plan view illustrating a substrate processing apparatus according to a first embodiment of the present invention. And, FIG. 2 is a cross-sectional view of the substrate processing apparatus according to the first embodiment of the present invention taken along line I-I' shown in FIG. 1 .

1 and 2, the substrate processing apparatus according to the first embodiment is configured to enable time-division atomic layer deposition and laser annealing, and a chamber 100 having a plurality of processing spaces therein; It is formed in each of the plurality of processing holes and is installed in the chamber 100 opposite to each of the substrate support 150 and the substrate support 150 on which the substrate 10 is seated, and the process gas is sprayed onto the substrate support 150 . The gas injection unit 130 , the substrate transfer unit 300 for transferring the substrate 10 from one processing space to another processing space among the plurality of processing spaces, and a substrate corresponding to at least one processing space among the plurality of processing spaces The laser annealing unit 140 installed in the chamber 100 opposite to the substrate supporting unit 150 to irradiate the laser beam to the substrate 10 seated on the supporting unit 150, and connected to the gas injection unit 130 to supply high-frequency power. It may include a power supply 400 to provide and a control unit for controlling each configuration.

The substrate processing apparatus according to the first embodiment includes one or more gates 111 through which the substrate 10 enters and exits on one side, and at least two or more processing spaces, for example, a first processing space S1 to a fourth processing space S4. The formed chamber 100 may be included. Here, the first processing space ( S1 ) to the third processing space ( S3 ) may be used as a thin film deposition space for forming a thin film on the substrate 10 , and the fourth processing space ( S4 ) is the film quality of the pre-formed thin film. It can be used as a post-processing space, for example, a laser annealing space, to improve Meanwhile, the gate 111 may include a loading gate 112 and an unloading gate 113 , and the first processing space S1 adjacent to the loading gate 112 holds the substrate 10 inside the chamber 100 . The second processing space S2 adjacent to the unloading gate 113 may be used as a loading area for loading into the furnace, and may also be used as an unloading area for unloading the substrate 10 to the outside of the chamber 100 . have.

The substrate 10 is a configuration in which substrate processing such as deposition and etching is performed, and substrates having various materials and shapes, such as a substrate for semiconductor manufacturing, a substrate for LCD manufacturing, a substrate for OLED manufacturing, a substrate for solar cell manufacturing, and a transparent glass substrate, can be used.

The chamber 100 is configured to form a substrate processing space for substrate processing, and various configurations are possible. For example, the chamber 100 includes a chamber body 110 having an opening formed on the upper side, and an upper lid 120 that is detachably coupled to the opening of the chamber body 110 to form a substrate processing space together with the chamber body 110 . , the first processing space (S1) to the fourth processing space (S4) disposed to correspond to each of the substrate support portion 150, the first processing space ( S1) to the gas injection unit 130 formed in the upper lid 120 to correspond to the third processing space (S3), the laser annealing unit 140 formed in the upper lid 120 to correspond to the fourth processing space (S4) may include The first processing space S1 to the fourth processing space S4 are not completely separated from each other in the chamber 100 , but may be spatially separated processing spaces.

Each of the plurality of substrate support units 150 has a flat plate shape as a whole so that at least one substrate 10 is seated on an upper surface thereof, and may be installed in a horizontal direction to face the gas injection unit 130 . The support shaft 154 is vertically coupled to the rear surface of the substrate support unit 150, and is connected to an external driving unit (not shown) through a through hole at the bottom of the chamber 100 to elevate and rotate the substrate support unit 150. can A heater (not shown) is provided inside the substrate support 150 to control the temperature of the substrate 10 seated thereon. For reference, the substrate support 150 may act as an electrode (eg, a second electrode) for generating plasma in the chamber 100 .

Each of the plurality of gas injection units 130 may be installed on the upper lid 120 to face the substrate support unit 150 on the upper chamber body 110 . The gas injector 130 may inject various process gases supplied from the gas supply 200 into the chamber 100 . The gas ejection unit 130 may be selected from among various types of gas ejection units 130 such as a showerhead type, an injector type, and a nozzle type. For reference, the gas injection unit 130 may act as an electrode (eg, a first electrode) for generating plasma in the chamber 100 .

The laser annealing unit 140 is for improving the film quality of a thin film formed at a low temperature (eg, 550° C. or less), and is formed on the laser transmitting unit 142 and the laser transmitting unit 142 coupled to the upper lead 120 . It may include a laser irradiation unit 144 for irradiating laser light for annealing to the substrate 10 .

The laser irradiation unit 144 may use laser light of various wavelength bands, and may use a single wavelength band alone, or may use a mixture of two or more different wavelength bands. The laser irradiation unit 144 may include means for controlling the laser irradiation area. For example, the laser irradiation unit 144 may irradiate laser light having a line shape, and the length of the irradiated laser light may be greater than the diameter of the substrate 10 . The laser beam having a line shape may cross the transfer direction of the substrate 10 . The laser irradiation unit 144 may oscillate and irradiate a laser beam having a wavelength in the range of 300 nm to 550 nm.

The laser light projecting unit 142 may have a shape corresponding to the gas injection unit 130 , and may be coupled to the upper lead 120 to support the laser irradiation unit 144 . The laser light projection unit 142 may be mounted on the upper lid 120 to replace the existing gas injection unit 130 . The laser transmitting unit 142 may be made of a material capable of transmitting the laser light irradiated from the laser transmitting unit 144 without loss, for example, sapphire glass. The laser light projecting unit 142 may condense or diffuse the laser light irradiated from the laser irradiation unit 144 . To this end, a predetermined pattern for condensing or diffusion may be formed inside or on the surface of the laser light transmitting unit 142 . The laser light transmitting unit 142 may be configured to selectively transmit only laser light having a preset wavelength.

The substrate processing apparatus according to the first embodiment may include a gas supply 200 connected to each gas injection unit 130 , and the gas supply 200 includes a gas supply source 210 , a valve 220 , and a gas supply. line 230 .

The gas source 210 may include a plurality of gas sources. For example, the gas supply source 210 includes a first gas supply source 211, a second gas supply source ( 213 ), a third gas source 215 , a fourth gas source 217 , and a fifth gas source 219 may be included.

The valve 220 may be installed between the gas supply source 210 and the gas supply line 230 to supply or block each process gas to the gas supply line 230 . The valve 220 includes first to fifth valves respectively connected between the first gas supply source 211 to the fifth gas supply source 219 and the first gas supply line 231 to the fifth gas supply line 239 . may include

The first process gas may be a first source gas, and the second process gas may be a carrier gas, for example, a carrier gas for the first source gas. In addition, the third process gas may be a second source gas, and the fourth process gas and the fifth process gas may be a purge gas and a reducing gas, respectively.

The substrate processing apparatus according to the first embodiment includes a plurality of substrate seating blades 310 on which the substrate 10 is seated, radially arranged, and rotates from one processing space to another in one processing space among the plurality of processing spaces. It may include a substrate transfer unit 300 for transferring the substrate 10 to the processing space.

The substrate transfer unit 300 is installed in the chamber 100, and through rotation of the plurality of substrate seating blades 310 on which the substrate 10 is mounted, from one processing space to another processing space among the plurality of processing spaces. The substrate 10 may be transferred. For example, the substrate transfer unit 300 is formed in a number corresponding to the plurality of substrate support units 150, and a plurality of substrate seating blades 310 having a seating area on which the substrate 10 is mounted is formed on the upper surface, A plurality of substrate seating blades 310 are coupled to the blade coupling body part 330 and the blade coupling body part 330 to which the blade coupling body part 330 is radially coupled to support the blade coupling body part 330, about a rotation axis perpendicular to the ground. It is rotatable and may include a rotation support shaft 320 that is installed to be movable up and down. The rotation support shaft 320 supports the blade coupling body 330 to which the substrate seating blades 310 are radially coupled, is rotatable about a rotation axis perpendicular to the ground, and can be installed to be movable up and down. . The substrate seating blades 310 may rotate and transfer the substrate 10 from one processing space to another processing space.

The substrate processing apparatus according to the first embodiment may include a power supply 400 . The power supply 400 may be configured to provide a high frequency power having a preset frequency band as a plasma power source. In addition, the power supply 400 may include a matching device, and the output impedance of the high frequency power supply and the load impedance in the chamber 100 are matched with each other through the matching device to eliminate the return loss caused by the high frequency power being reflected from the chamber 100 . can be configured to

The power supply 400 may provide a high frequency power source having a center frequency of 27.12 MHz or higher, or 60 MHz or higher. When high-frequency power with a center frequency of 13.56 MHz is supplied, the density of the thin film formed on the pattern appears softer on the lower side of the pattern than on the upper side of the pattern. A thin film of a dense and uniform film quality may be formed over the entire lower portion.

The controller may control the respective operations of the substrate support unit 150 , the gas injection unit 130 , the substrate transfer unit 300 , the laser annealing unit 140 , and the power supply 400 when thin film deposition using the substrate processing apparatus. . In particular, the control unit controls the substrate transfer unit 300 adjacent to the other side of the fourth processing space S4 in the third processing space S3 adjacent to one side of the fourth processing space S4 in which the laser annealing unit is installed among the plurality of processing spaces. While the substrate 10 is transferred to the second processing space S2 via the fourth processing space S4, the laser annealing unit 140 irradiates a laser beam to the transferred substrate 10 to heat the substrate 10. It can be controlled to perform laser annealing while scanning.

3 is a flowchart illustrating a thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention. 4A is a timing diagram for explaining a thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention. 4B and 4C are timing diagrams for explaining a modified example of the thin film deposition method using the substrate processing apparatus according to the first embodiment of the present invention.

1 to 4A , the temperature in the chamber 100 is set to a low temperature, for example, 550° C. or less, preferably 400° C. or less, in order to form a thin film in the substrate processing apparatus according to the first embodiment. And, in a state in which the pressure is set to 1 to 10 Torr, the substrate 10 is seated on the substrate support unit 150 . In this case, the substrate 10 may be seated on the substrate support unit 150 of each of the first processing spaces S1 to S4 through the substrate transfer unit 300 . Then, after making the inside of the chamber 100 in a vacuum state, a process gas, for example, a carrier gas and a first source gas are injected through the gas injection unit 130 .

Accordingly, the first source gas is adsorbed to the surface of the substrate 10 . After the adsorption process, the supply of the first source gas and the carrier gas is stopped, and the residual gas after adsorption may be removed through the first purge process. As the purge gas, argon gas may be used alone or a mixture of argon gas and nitrogen gas may be used, but is not limited thereto.

The first source gas may be a silicon-containing gas. As the silicon-containing gas, a halide-based silicon-containing gas including a halogen element such as chlorine (Cl) or iodine (I) may be used. For example, as a halide-based silicon-containing gas, dichlorosilane (H ₂ SiCl ₂ , DCS), hexachlorodisilane (Cl ₆ Si ₂ , HCDS), diiodosilane (Diiodosilane, SiH ₂ I _{2 )} , DIS), methyltrichlorosilane (Methyltrichlorosilane, CH ₃ Cl ₃ Si), dimethyldichlorosilane (Dimethyldichlorosilane, Si(CH ₃ ) ₂ Cl ₂ ) and chlorotrimethylsilane (chlorotrimethylsilane, C ₃ H ₉ ClSi) from the group consisting of Any one selected or a mixture of two or more may be used. In addition, as the silicon-containing gas, an amine-based silicon-containing gas that is a nitrogen compound including a functional group in which one or more hydrogens are substituted with an alkyl or an aromatic ring _{in ammonia (NH 3 ) may be used.} As an amine-based silicon-containing gas, Diisopropylaminosilane (Diisopropylaminosilane, H ₃ Si[N{(CH)(CH ₃ ) ₂ }], DIPAS), Bisdiethylaminosilane, H ₂ Si((N(C ₂ H ₅ ) ₂ ) ₂ , BDEAS) and Bistertbutylaminosilane (Bistertbutylaminosilane, [(CH ₃ ) ₃ CNH] ₂ SiH ₂ , BTBAS) may be used in combination with any one or two or more selected from the group consisting of.

Meanwhile, although FIG. 4A illustrates a case in which a reducing gas is supplied together with the first source gas during the adsorption process, the present invention is not limited thereto. As a modification, as shown in FIGS. 4B and 4C , the reducing gas may not be supplied during the adsorption process.

After purging the first source gas, a reduction process is performed on the first source gas by applying a high-frequency power to the gas injection unit 130 by the power supply 400 while supplying the reducing gas. Through the reduction process, impurities in the reducing gas and the first source gas, such as halogen and hydrogen, may be desorbed and discharged to the outside. The reducing gas may be a hydrogen-containing gas. During the reduction process of the first source gas, by removing impurities in the first source gas in advance, reactivity with the second source gas to be subsequently supplied may be improved.

Thereafter, a second purge process may be performed by supplying the purge gas. The second purge process may use the same purge gas as the first purge process.

After the reduction process is performed, the film forming process may be performed by supplying the second source gas as a reaction gas. When the second source gas is supplied, the reducing gas may be supplied together, and the application of the high frequency power by the power supply 400 may be blocked. When the second source gas is supplied, as the reducing gas is supplied together, the impurities are desorbed by a reaction between the impurities contained in the first source gas and the reducing gas, thereby improving the reactivity of the first source gas and the second source gas. The second source gas may be selected from ammonia-containing gas, and a silicon nitride layer (SiN) may be formed by a reaction between the first source gas and the second source gas. Ammonia-containing gas is easier to decompose compared to other nitrogen-containing gases (eg, N ₂ ), so that when applied as a second source gas, film formation efficiency can be improved.

After the film forming process, the supply of the second source gas may be stopped and the reaction byproducts and unreacted gas may be removed through the third purge process. The third purge process may use the same purge gas as the first and second purge processes.

By supplying the reducing gas during the reduction process of the first source gas, impurities in the first source gas may be combined with or desorbed from the reducing gas and discharged to the outside. Accordingly, the reactivity of the first source gas and the second source gas from which impurities are primarily removed during the film forming process of supplying the second source gas is improved. In addition, since the reducing gas is also supplied when the second source gas is supplied, impurities contained in the first source gas are further desorbed, so that the reactivity can be further improved.

Then, the substrate 10 seated on the substrate support unit 150 of each of the first processing spaces S1 to S3 is raised by using the substrate transfer unit 300, and then at least once or more 4 The substrate transfer unit 300 is rotated to pass the laser annealing unit 140 provided on the upper portion of the processing space S4. That is, the substrate 10 initially positioned in the first processing space S1 passes through the second processing space S2 , the third processing space S3 , and the fourth processing space S4 sequentially to sequentially pass through the first processing space S1 , which is the original position. The substrate transfer unit 300 may be rotated to return to the processing space S1 . In this case, while laser annealing is performed by the laser light irradiated from the laser annealing unit 140 while passing through the fourth processing space S4, the film quality of the pre-formed silicon nitride film may be improved.

The present invention increases the surface temperature of the thin film to a high temperature (eg, 600° C. or higher) by performing laser annealing multiple times in the process of forming a thin film by atomic layer deposition at a low temperature of 550° C. or less to remove impurities in the thin film and at the same time By increasing the degree of bonding between elements, it is possible to secure film quality characteristics equivalent to or higher than those of a thin film formed by a conventional high-temperature atomic layer deposition method. In addition, in forming the deposition target thin film on the base layer on which the pattern having a high aspect ratio is formed, a thin film having a uniform thickness and film quality may be formed. In addition, as laser annealing is applied, only the surface temperature of the thin film to which the laser light is irradiated increases, thereby preventing damage to the substrate 10 from occurring.

In addition, the present invention removes impurities in the first source gas by generating a plasma together with a reducing gas after supplying the first source gas to form a thin film at a low temperature of 550° C. or less, and subsequently generating the second source gas A film is formed by supplying the first source gas and the second source gas to react. In this case, impurities in the first source gas can be easily removed by supplying the reducing gas in the entire section including the reduction process. Meanwhile, although FIG. 4 illustrates a case in which a reducing gas is not supplied during the laser annealing process, the present invention is not limited thereto. As a modification, a reducing gas may be supplied together with the purge gas during the laser annealing process.

The first source gas of halide-based or amine-based source gas supplied when forming a silicon nitride film contains impurities (chlorine, hydrogen). The step coverage characteristic is poor. Therefore, it is difficult to form a dense thin film while having a conformal thickness along the upper end, sidewall, and lower end of the pattern formed on the substrate surface. In particular, if the thickness of the thin film formed on the sidewall of the pattern is not uniform and not dense, a constant etch rate cannot be guaranteed during the subsequent etching process.

However, in the present invention, since the reducing gas is continuously supplied sufficiently in the entire section including the reduction process of the first source gas, a dense silicon nitride film can be formed, and in particular, the compactness of the thin film formed on the sidewall of the pattern is increased. Coverage characteristics can be secured.

After the first process including the adsorption and reduction process described above is repeatedly performed L times (L is a natural number greater than or equal to 1), the second process including the film forming process is repeated M times (M is a natural number greater than or equal to 1) can be repeated. In addition, the first process, the second process, and the laser annealing process may be repeatedly performed N preset times (N is a natural number equal to or greater than 1) to form a uniform and dense thin film.

Meanwhile, in the embodiment based on the timing diagram shown in FIG. 4A, the case in which the reducing gas is supplied to all of the adsorption process, the reduction process, and the film formation process is exemplified, but the present invention is not limited thereto. Specifically, in the first modification based on the timing diagram shown in FIG. 4B , the reducing gas may be supplied only during the reduction process and the film forming process. In addition, in the second modification based on the timing diagram shown in Fig. 4c, the reducing gas may be continuously supplied after the reduction process.

5 is a plan view illustrating a substrate processing apparatus according to a second embodiment of the present invention. And, FIG. 6 is a cross-sectional view of the substrate processing apparatus according to the second embodiment of the present invention taken along line I-I' shown in FIG. 5 . Hereinafter, for convenience of description, the same reference numerals are used for components that are the same as or perform similar functions as those of the substrate processing apparatus according to the first embodiment, and detailed descriptions thereof will be omitted.

5 and 6, the substrate processing apparatus according to the second embodiment is configured to enable space-division atomic layer deposition and laser annealing, and a chamber 100 having a plurality of processing spaces therein; The substrate support unit 150 is rotatable so that the substrate 10 can move between the plurality of processing spaces and has a plurality of substrate seating grooves 156 on which the substrate 10 is mounted radially to correspond to each of the plurality of processing spaces. , disposed above the plurality of processing spaces to face the substrate support unit 150 , and supplying different gases toward the substrate support unit 150 , in which a plurality of gas injection units are disposed in a circumferential direction to have a plurality of gas injection regions At least one of the gas injection unit 130 and the plurality of gas injection units is a laser annealing unit 140 installed on the upper part of the chamber 100 so as to irradiate a laser beam onto the substrate seating groove 156, and among the plurality of gas injection units. It may include a power supply 400 connected to at least one or more to provide high-frequency power and a control unit for controlling each configuration.

In the substrate processing apparatus according to the second embodiment, one or more gates 111 through which the substrate 10 enters and exits on one side, and a plurality of processing spaces, for example, a first processing space S1 to an eighth processing space S8 are formed on one side. It may include a chamber 100 . Here, the first processing space S1 to the sixth processing space S6 and the eighth processing space S8 may be used as a thin film deposition space for forming a thin film on the substrate 10, and the seventh processing space ( S7) may be used as a post-processing space for improving the film quality of a pre-formed thin film, for example, a laser annealing space. Meanwhile, the first processing space S1 adjacent to the gate 111 may also be used as a loading/unloading region for loading or unloading the substrate 10 into the chamber 100 .

The chamber 100 is configured to form a substrate processing space for substrate processing, and various configurations are possible. For example, the chamber 100 includes a chamber body 110 having an opening formed on the upper side, and an upper lid 120 that is detachably coupled to the opening of the chamber body 110 to form a substrate processing space together with the chamber body 110 . , the upper portion to correspond to the substrate support unit 150, the seventh processing space (S7), disposed to correspond to each of the plurality of processing spaces in the substrate processing space, and having a substrate seating groove 156 on the upper surface of which the substrate 10 is seated. The gas injection unit 130 having a plurality of gas injection units formed in the upper lid 120 to correspond to the remaining processing spaces except for the laser annealing unit 140 formed in the lead 120 and the seventh processing space S7. may include

The substrate support unit 150 can seat the substrate 10 in the substrate seating groove 156 formed on the upper surface to correspond to each processing space, has a flat plate shape as a whole, and faces the gas injection unit 130 horizontally. direction can be installed. The support shaft 154 is vertically coupled to the rear surface of the substrate support unit 150, and is connected to an external driving unit (not shown) through a through hole at the bottom of the chamber 100 to elevate and rotate the substrate support unit 150. can During the thin film deposition process, while the substrate support 150 rotates about the support shaft 154 , the atomic layer deposition method of thin film deposition and laser annealing may be performed. A heater (not shown) is provided inside the substrate support 150 to control the temperature of the substrate 10 seated thereon.

The gas injection unit 130 may be installed on the chamber body 110 to face the substrate support unit 150 . The gas injector 130 may inject various process gases supplied from the gas supply 200 into the chamber 100 . The gas ejection unit 130 may be selected from among various types of gas ejection units 130 such as a showerhead type, an injector type, and a nozzle type. The gas injection unit 130 may supply different gases toward the substrate support unit 150 , and a plurality of gas injection units may be disposed in a circumferential direction to have a plurality of gas injection regions. Here, each of the plurality of gas injection regions may correspond to each of the plurality of processing spaces. For reference, each of the plurality of gas injection units constituting the gas injection unit 130 may act as an electrode for generating plasma in each of the plurality of processing spaces.

A laser annealing unit 140 for irradiating laser light onto the substrate seating groove 156 may be installed in at least one of the plurality of gas injection units. The laser annealing unit 140 is for improving the film quality of a thin film formed at a low temperature (eg, 550° C. or less), and is formed on the laser transmitting unit 142 and the laser transmitting unit 142 coupled to the upper lead 120 . It may include a laser irradiation unit 144 for irradiating laser light for annealing to the substrate 10 .

The laser irradiation unit 144 may use laser light of various wavelength bands, and may use a single wavelength band alone, or may use a mixture of two or more different wavelength bands. The laser irradiation unit 144 may include means for controlling the laser irradiation area. For example, the laser irradiation unit 144 may irradiate laser light having a line shape, and the length of the irradiated laser light may be greater than the diameter of the substrate 10 . The laser beam having a line shape may intersect the transfer direction (or rotation direction) of the substrate 10 . The laser irradiation unit 144 may oscillate and irradiate a laser beam having a wavelength in the range of 300 nm to 550 nm.

The laser light projecting unit 142 may have a shape corresponding to the gas injection unit 130 , and may be coupled to the upper lead 120 to support the laser irradiation unit 144 . The laser light projection unit 142 may be mounted on the upper lid 120 to replace the existing gas injection unit 130 . The laser transmitting unit 142 may be made of a material capable of transmitting the laser light irradiated from the laser transmitting unit 144 without loss, for example, sapphire glass. The laser light projecting unit 142 may condense or diffuse the laser light irradiated from the laser irradiation unit 144 . To this end, a predetermined pattern for condensing or diffusion may be formed inside or on the surface of the laser light transmitting unit 142 . The laser light transmitting unit 142 may be configured to selectively transmit only laser light having a preset wavelength.

Although not shown in the drawings, the substrate processing apparatus according to the second embodiment may include a gas supply connected to each gas injection unit 130 , and the gas supply may include a gas supply source, a valve, and a gas supply line. (See Fig. 1). The gas source may include a plurality of gas sources. For example, the gas supply source is a first gas supply source, a second gas supply source, a third gas supply source, It may include a fourth gas source and a fifth gas source. The valve may be installed between the gas supply line and the gas supply line, so that each process gas is supplied or blocked to the gas supply line. The valve may include first to fifth valves respectively connected to the first to fifth gas supply lines and the first to fifth gas supply lines.

The first process gas may be a first source gas, and the second process gas may be a carrier gas, for example, a carrier gas for the first source gas. In addition, the third process gas may be a second source gas, and the fourth process gas and the fifth process gas may be a purge gas and a reducing gas, respectively. For example, the first gas supply source and the second gas supply source may be connected to the gas injection unit 130 of the first processing space S1 , and the third gas supply source may be the gas injection unit 130 of the fifth processing space S5 . ) can be connected to Both the fourth gas supply source and the fifth gas supply source may be connected to the gas injection unit 130 corresponding to each of the remaining processing spaces except for the seventh processing space S7 .

The substrate processing apparatus according to the second embodiment may include a power supply 400 . The power supply 400 may be connected to the gas injection unit 130 of the third processing space S3 in which the reduction process is performed among the plurality of processing spaces. The power supply 400 may be configured to provide a high frequency power having a preset frequency band as a plasma power source. In addition, the power supply 400 may include a matching device, and the output impedance of the high frequency power supply and the load impedance in the chamber 100 are matched with each other through the matching device to eliminate the return loss caused by the high frequency power being reflected from the chamber 100 . can be configured to

The power supply 400 may provide a high frequency power source having a center frequency of 27.12 MHz or higher, or 60 MHz or higher. When high-frequency power with a center frequency of 13.56 MHz is supplied, the density of the thin film formed on the pattern appears softer on the lower side of the pattern than on the upper side of the pattern. A thin film of a dense and uniform film quality may be formed over the entire lower portion.

The control unit may control the respective operations of the substrate support unit 150 , the gas injection unit 130 , the laser annealing unit 140 , and the power supply 400 . In particular, the control unit controls the substrate support unit 150 to rotate in the sixth processing space S6 adjacent to one side of the seventh processing space S7 in which the laser annealing unit 140 is installed among the plurality of processing spaces in the seventh processing space S7 . ) while transferring the substrate 10 to the eighth processing space (S8) adjacent to the other side via the seventh processing space (S7), the laser annealing unit 140 irradiates a laser beam to the substrate 10 being transferred. The laser annealing may be performed while scanning the substrate 10 . In other words, after the thin film is deposited on the substrate 10 while passing through the plurality of gas injection regions by the rotation of the substrate support unit 150 , the control unit passes through the laser annealing unit 140 while the substrate 10 is rotationally moved. While scanning the substrate 10 by irradiating laser light to the substrate 10, annealing may be performed.

7 is a flowchart illustrating a thin film deposition method using a substrate processing apparatus according to a second exemplary embodiment of the present invention.

5 to 7 , in order to form a thin film in the substrate processing apparatus according to the second embodiment, the temperature in the chamber 100 is set to a low temperature, for example, 550° C. or less, preferably 400° C. or less. And, in a state in which the pressure is set to 1 to 10 Torr, the substrate 10 is seated on the substrate support unit 150 . Hereinafter, for convenience of description, the formation of a thin film on the substrate 10 seated in the first processing space S1 will be exemplified.

Then, after making the inside of the chamber 100 in a vacuum state, a process gas, for example, a carrier gas and a first source gas, is injected through the gas injection unit 130 of the first processing space S1 . Accordingly, the first source gas is adsorbed to the surface of the substrate 10 . The first source gas may be a silicon-containing gas. As the silicon-containing gas, a halide-based silicon-containing gas including a halogen element or an amine-based silicon-containing gas may be used.

After a preset time has elapsed, the substrate support unit 150 is rotated clockwise to transfer the substrate 10 to the second processing space S2 , and then the gas injection unit 130 of the second processing space S2 is moved. The first purge process of injecting a purge gas through the After adsorption, the residual gas may be removed through the primary purge process. As the purge gas, argon gas may be used alone or a mixture of argon gas and nitrogen gas may be used, but is not limited thereto.

After a preset time has elapsed, the substrate support unit 150 is rotated clockwise to transfer the substrate 10 to the third processing space S3 , and then the gas injection unit 130 of the third processing space S3 is moved. While supplying a reducing gas through the power supply 400, a high-frequency power is applied to the gas injection unit 130 to perform a reduction process for the first source gas. Through the reduction process, impurities in the reducing gas and the first source gas, such as halogen and hydrogen, may be desorbed and discharged to the outside. The reducing gas may be a hydrogen-containing gas. During the reduction process of the first source gas, by removing impurities in the first source gas in advance, reactivity with the second source gas to be subsequently supplied may be improved.

After a preset time has elapsed, the substrate support unit 150 is rotated clockwise to transfer the substrate 10 to the fourth processing space S4, and then the gas injection unit 130 of the fourth processing space S4 is moved. A second purge process of injecting a purge gas through the The second purge process may use the same purge gas as the first purge process.

After a preset time has elapsed, the substrate support unit 150 is rotated clockwise to transfer the substrate 10 to the fifth processing space S5 , and then the gas injection unit 130 of the fifth processing space S5 is moved. A second source gas, which is a reaction gas, is supplied through the film to perform a film formation process. When the second source gas is supplied, a reducing gas may be supplied together. When the second source gas is supplied, as the reducing gas is supplied together, the impurities are desorbed by a reaction between the impurities contained in the first source gas and the reducing gas, thereby improving the reactivity of the first source gas and the second source gas. The second source gas may be selected from ammonia-containing gas, and a silicon nitride layer (SiN) may be formed by a reaction between the first source gas and the second source gas. Ammonia-containing gas is easier to decompose compared to other nitrogen-containing gases (eg, N ₂ ), so that when applied as a second source gas, film formation efficiency can be improved.

After a preset time has elapsed, the substrate support unit 150 is rotated clockwise to transfer the substrate 10 to the sixth processing space S6, and then the gas injection unit 130 of the sixth processing space S6 is moved. A third purge process of injecting a purge gas through the Reaction by-products and unreacted gases may be removed through the third purge process. The third purge process may use the same purge gas as the first and second purge processes.

By supplying the reducing gas during the reduction process of the first source gas, impurities in the first source gas may be combined with or desorbed from the reducing gas and discharged to the outside. Accordingly, the reactivity of the first source gas and the second source gas from which impurities are primarily removed during the film forming process of supplying the second source gas is improved. In addition, since the reducing gas is also supplied when the second source gas is supplied, impurities contained in the first source gas are further desorbed, so that the reactivity can be further improved.

After the preset time has elapsed, the laser provided in the seventh processing space is rotated clockwise to transfer the substrate 10 to the eighth processing space S8 through the seventh processing space S7 by rotating the substrate support unit 150 clockwise. A laser annealing process of irradiating laser light to the entire surface of the substrate 10 through the annealing unit 140 is performed. In this case, the film quality of the silicon nitride film previously formed by the laser irradiated from the laser annealing unit 140 while passing through the seventh processing space S7 may be improved.

When the laser annealing process is completed and the substrate 10 reaches the eighth processing space S8, a fourth purge process of injecting a purge gas through the gas injection unit 130 of the eighth processing space S6 is performed. . In the fourth purge process, the temperature of the substrate 10 may be stabilized while removing reaction byproducts. The fourth purge process may use the same purge gas as the first and second purge processes.

The present invention sequentially increases the surface temperature of the thin film to a high temperature (eg, 600° C. or higher) while forming a thin film by atomic layer deposition at a low temperature of 550° C. By increasing the degree of bonding between the two, it is possible to secure film quality properties comparable to or higher than those of a thin film formed by a conventional high-temperature atomic layer deposition method. In addition, in forming the deposition target thin film on the base layer on which the pattern having a high aspect ratio is formed, a thin film having a uniform thickness and film quality may be formed. In addition, as laser annealing is applied, only the surface temperature of the thin film to which the laser is irradiated increases, thereby preventing damage to the base layer and the substrate from occurring.

In addition, the present invention removes impurities in the first source gas by generating a plasma together with a reducing gas after supplying the first source gas to form a thin film at a low temperature of 550° C. or less. Subsequently, a second source gas is supplied so that the first source gas and the second source gas react to form a film. In this case, impurities in the first source gas can be easily removed by supplying the reducing gas in the entire section including the reduction process.

The first source gas of halide-based or amine-based source gas supplied when forming a silicon nitride film contains impurities (chlorine, hydrogen). The step coverage characteristic is poor. Therefore, it is difficult to form a dense thin film while having a conformal thickness along the upper end, sidewall, and lower end of the pattern formed on the substrate surface. In particular, if the thickness of the thin film formed on the sidewall of the pattern is not uniform and not dense, a constant etch rate cannot be guaranteed during the subsequent etching process.

However, in the present invention, since the reducing gas is continuously supplied sufficiently in the entire section including the reduction process of the first source gas, a dense silicon nitride film can be formed, and in particular, the compactness of the thin film formed on the sidewall of the pattern is increased. Coverage characteristics can be secured.

On the other hand, the first process including the adsorption and reduction process described above, the second process including the film forming process, and the laser annealing process are repeatedly performed N times (N is a natural number greater than or equal to 1) to obtain a desired uniform and dense film quality. can form.

Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the embodiments, and various modifications are possible by those skilled in the art within the scope of the technical spirit of the present invention. .

10: substrate 100: chamber
110: chamber body 120: upper lead
111: gate 130: gas injection unit
140: laser annealing unit 142: laser light projecting unit
144: laser irradiation unit 150: substrate support unit
152: substrate seating surface 154: support shaft
156: substrate seating groove 200: gas supply
300: substrate transfer unit 310: substrate seating blade
320: rotation support 330: blade coupling body part
400: power supply

Claims (20)

an adsorption step of supplying a first source gas through a gas supply unit above the chamber to adsorb the first source gas on a substrate;
a reduction step of stopping the supply of the first source gas and reducing the first source gas by applying a high-frequency power to the gas supply unit while supplying the reducing gas to generate plasma;
a film forming step of supplying a second source gas to react the first source gas with the second source gas; and
Laser annealing step of performing annealing by irradiating laser light on the substrate
A thin film deposition method comprising a. According to claim 1,
After repeatedly performing the first process including the adsorption step and the reduction step L times (here, L is a natural number greater than or equal to 1), the second process including the film forming process is repeated M times (here, M is a natural number equal to or greater than 1) is repeatedly performed, and the first process, the second process, and the laser annealing process are repeatedly performed N preset times (where N is a natural number equal to or greater than 1). According to claim 1,
The film forming step is a thin film deposition method performed while supplying the reducing gas together with the second source gas. 4. The method of claim 3,
The adsorption step is a thin film deposition method performed while supplying the reducing gas together with the first source gas. According to claim 1,
A method for depositing a thin film in which the high-frequency power is cut off in the film-forming step. According to claim 1,
The reduction step is a thin film deposition method of generating the plasma by applying a high frequency power having a center frequency band of 27.12 MHz or more. According to claim 1,
The first source gas includes a silicon-containing gas, the second source gas includes an ammonia-containing gas, and the reducing gas includes a hydrogen-containing gas. According to claim 1,
A thin film deposition method in which the temperature inside the chamber is set in the range of room temperature to 550°C. According to claim 1,
The laser annealing step has a wavelength in the range of 300nm to 550nm, a thin film deposition method performed by using a laser beam having a single wavelength or two or more different wavelengths. a chamber having a plurality of processing spaces therein;
a substrate support unit formed in each of the plurality of processing holes to receive a substrate;
a gas injection unit corresponding to each of the plurality of processing spaces and installed in the chamber opposite to each of the substrate supporting units to inject a process gas onto the substrate supporting unit;
a substrate transfer unit for transferring the substrate from one processing space to another processing space among the plurality of processing spaces;
a laser annealing unit installed in the chamber opposite to the substrate supporting unit to irradiate a laser beam to the substrate seated on the substrate supporting unit corresponding to at least one processing space among the plurality of processing spaces;
a power supply unit connected to the gas injection unit to provide high-frequency power; and
The substrate transfer unit passes from a first processing space adjacent to one side of the second processing space in which the laser annealing unit is installed among the plurality of processing spaces to a third processing space adjacent to the other side of the second processing space via the second processing space A control unit for controlling the laser annealing unit to perform annealing while scanning the substrate by irradiating laser light to the substrate being transferred while the substrate is being transferred
A substrate processing apparatus comprising a. a chamber having a plurality of processing spaces therein;
a substrate support portion provided to be rotatable in the processing space and having a plurality of substrate seating grooves formed on an upper surface of the substrate to be seated;
a gas injection unit disposed above the processing space to face the substrate support unit, and supplying different gases to the substrate support unit, the plurality of gas injection units being disposed in a circumferential direction to have a plurality of gas injection regions;
At least one of the plurality of gas injection units may include: a laser annealing unit installed on the upper part of the chamber to irradiate a laser beam onto the substrate seating groove;
a power supply unit connected to at least one of the plurality of gas injection units to provide high frequency power; and
After the thin film is deposited on the substrate while passing through the plurality of gas injection regions by rotation of the substrate support, the substrate is irradiated with laser light while passing through the laser annealing unit while the substrates are rotationally moved to scan the substrate. A control unit that controls to perform annealing while
A substrate processing apparatus comprising a. 12. The method of claim 10 or 11,
The laser annealing unit,
a laser light projecting unit installed in the chamber to overlap the substrate support unit and projecting laser light; and
A laser irradiator installed on the laser emitting part to irradiate a laser beam toward the substrate support part under the laser emitting part
A substrate processing apparatus comprising a. 13. The method of claim 12,
The laser projecting unit is a substrate processing apparatus for condensing or diffusing the laser light irradiated from the laser irradiation unit. 13. The method of claim 12,
The laser beam irradiated from the laser irradiation unit has a wavelength in the range of 300 nm to 550 nm, a substrate processing apparatus having a single wavelength or two or more different wavelengths. 13. The method of claim 12,
The laser beam irradiated from the laser irradiation unit has a line shape having a length longer than the diameter of the substrate. 11. The method of claim 10,
The substrate transfer unit,
a plurality of substrate seating blades formed in a number corresponding to the plurality of processing spaces and having a seating area on an upper surface of which the substrate is mounted;
a blade coupling body to which the plurality of substrate seating blades are radially coupled; and
A rotation support shaft coupled to the blade coupling body and installed to be able to rotate and move up and down about a rotation axis perpendicular to the ground
A substrate processing apparatus comprising a. 11. The method of claim 10,
The control unit adsorbs a first source gas on the substrate as the substrate to be processed is provided, and supplies a second source gas after a reduction process of reducing the first source gas adsorbed by plasma using a reducing gas. After performing the film forming process, the substrate processing apparatus controls the laser annealing process to be performed while transferring the substrate from one of the plurality of processing spaces to another processing space through the substrate transfer unit. 18. The method of claim 17,
The control unit repeats the first process including the adsorption and reduction process L times (here, L is a natural number equal to or greater than 1) preset L times, and then repeats the second process including the film formation process M times (here, M is a natural number equal to or greater than 1) is repeatedly performed, and the first process, the second process, and the laser annealing process are controlled to be repeated N preset times (where N is a natural number equal to or greater than 1). 18. The method of claim 17,
The first source gas, the second source gas, and the reducing gas include a silicon-containing gas, an ammonia-containing gas and a hydrogen-containing gas, respectively, and the control unit is configured to perform the adsorption and/or film formation in addition to the reduction process. A substrate processing apparatus for controlling the supply of the reducing gas. 18. The method of claim 17,
The control unit is a substrate processing apparatus for controlling the temperature in the chamber to be in the range of room temperature to 550 ℃.

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