KR20210138833A - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
KR20210138833A
KR20210138833A KR1020200056370A KR20200056370A KR20210138833A KR 20210138833 A KR20210138833 A KR 20210138833A KR 1020200056370 A KR1020200056370 A KR 1020200056370A KR 20200056370 A KR20200056370 A KR 20200056370A KR 20210138833 A KR20210138833 A KR 20210138833A
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South Korea
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disposed
holder
wafer
wafer transfer
deposition apparatus
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KR1020200056370A
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Korean (ko)
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김대길
권현철
류왕엽
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삼성전자주식회사
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Priority to KR1020200056370A priority Critical patent/KR20210138833A/en
Publication of KR20210138833A publication Critical patent/KR20210138833A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A deposition apparatus according to an embodiment of the present invention comprises: a chamber having an interior space; a plurality of heaters disposed in the inner space of the chamber and provided with installation grooves in which a wafer is disposed on the upper portion during a deposition process and a plurality of installation grooves are disposed along a circumferential direction; a wafer transfer part disposed around the plurality of heaters and being raised and lowered and rotated; an anti-stacking member installed in the wafer transfer part and having an extension part inserted into the installation groove when the wafer transfer part is disposed in a base position; a holder installed on a side surface of the extension part and disposed in the installation groove when the wafer transfer part is disposed at a base position; and a washer disposed between the extension part and the holder. An object of the present invention is to provide the deposition apparatus capable of suppressing damage to a screw due to corrosion of the washer.

Description

증착 장치{Deposition apparatus}Deposition apparatus

본 발명은 증착 장치에 관한 것이다.The present invention relates to a deposition apparatus.

일반적으로 웨이퍼에 텅스텐(W)을 적층시키기 위한 공정을 진행하는 챔버에는 4개의 히터(Heater)가 구비될 수 있으며, 각 히터 상에 웨이퍼를 이송하기 위한 웨이퍼 이송 장치가 사용된다.In general, four heaters may be provided in a chamber for performing a process for laminating tungsten (W) on a wafer, and a wafer transfer device for transferring the wafer onto each heater is used.

한편, 웨이퍼 이송 장치에는 웨이퍼 가장자리(Edge)의 텅스텐 적층을 방지하기 위한 적층 방지 부재(Minimal Overlap Exculusion Ring, MOER)가 구비된다.On the other hand, the wafer transfer device is provided with an anti-stacking member (Minimal Overlap Exculusion Ring, MOER) for preventing tungsten stacking on the edge of the wafer.

또한, 웨이퍼 및 적층 방지 부재에 적층된 텅스텐(W)을 청소(Clean) 하기 위해 클리닝 가스(Cleaning Gas, NF3)를 사용하는데 클리닝 가스에 의해 적층 방지 부재와 홀더를 고정하는 스크류에 삽입된 와셔의 부식으로 스크류의 파손 및 웨이퍼의 파손이 발생되는 문제가 있다.In addition, a cleaning gas (NF3) is used to clean the tungsten (W) stacked on the wafer and the anti-stacking member. There is a problem in that the damage of the screw and the damage of the wafer occur due to corrosion.

본 발명의 기술적 사상이 이루고자 하는 기술적 과제 중 하나는, 와셔의 부식으로 인한 스크류의 파손을 억제할 수 있는 증착 장치를 제공하는 것이다.One of the technical problems to be achieved by the technical idea of the present invention is to provide a deposition apparatus capable of suppressing damage to a screw due to corrosion of the washer.

또한, 본 발명의 기술적 사상이 이루고자 하는 기술적 과제 중 하나는, 홀더를 적층 방지 부재에 일정한 토크로 조립하더라도 홀더와 웨이퍼와의 접촉 면적이 일정할 수 있는 증착 장치를 제공하는 것이다.In addition, one of the technical problems to be achieved by the technical idea of the present invention is to provide a deposition apparatus in which the contact area between the holder and the wafer can be constant even when the holder is assembled to the anti-stacking member with a constant torque.

예시적인 실시예에 따른 증착 장치는 내부 공간을 가지는 챔버와, 상기 챔버의 내부 공간에 배치되며 증착 공정 시 상부에 웨이퍼가 배치되고 원주 방향을 따라 복수개가 배치되는 설치홈이 구비되는 복수개의 히터와, 상기 복수개의 히터의 주위에 배치되며 승강 및 회전되는 웨이퍼 이송부와, 상기 웨이퍼 이송부에 설치되며 상기 웨이퍼 이송부가 베이스 위치에 배치되는 경우 상기 설치홈에 삽입되는 연장부를 구비하는 적층 방지 부재와, 상기 연장부의 측면에 설치되어 상기 웨이퍼 이송부가 베이스 위치에 배치되는 경우 상기 설치홈 내에 배치되는 홀더 및 상기 연장부와 상기 홀더 사이에 배치되는 와셔를 포함한다.A deposition apparatus according to an exemplary embodiment includes a chamber having an inner space, a plurality of heaters disposed in the inner space of the chamber and having a wafer disposed thereon during a deposition process and provided with a plurality of installation grooves disposed in a circumferential direction; , a stacking prevention member disposed around the plurality of heaters and having a wafer transfer part that is raised and rotated, and an extension part installed in the wafer transfer part and inserted into the installation groove when the wafer transfer part is disposed at a base position; It is installed on the side of the extension and includes a holder that is arranged in the installation groove when the wafer transfer unit is arranged at the base position, and a washer that is arranged between the extension and the holder.

와셔의 부식으로 인한 스크류의 파손을 억제할 수 있는 웨이퍼 이송 장치를 제공할 수 있다.It is possible to provide a wafer transfer device capable of suppressing damage to the screw due to corrosion of the washer.

또한, 홀더를 적층 방지 부재에 일정한 토크로 조립할 수 있는 웨이퍼 이송 장치를 제공할 수 있다.Further, it is possible to provide a wafer transfer device capable of assembling the holder to the anti-stacking member with a constant torque.

본 발명의 다양하면서도 유익한 장점과 효과는 상술한 내용에 한정되지 않으며, 본 발명의 구체적인 실시예를 설명하는 과정에서 보다 쉽게 이해될 수 있을 것이다.The various and beneficial advantages and effects of the present invention are not limited to the above, and will be more easily understood in the course of describing specific embodiments of the present invention.

도 1은 예시적인 실시예에 따른 증착 장치를 나타내는 개략 구성도이다.
도 2는 도 1의 A부를 나타내는 단면도이다.
도 3은 홀더를 나타내는 사시도이다.
도 4는 도 2의 변형 실시예를 나타내는 단면도이다.
도 5는 도 4의 홀더를 나타내는 사시도이다.1 is a schematic configuration diagram showing a deposition apparatus according to an exemplary embodiment.
FIG. 2 is a cross-sectional view showing a portion A of FIG. 1 .
3 is a perspective view showing the holder.
4 is a cross-sectional view illustrating a modified embodiment of FIG. 2 .
5 is a perspective view illustrating the holder of FIG. 4 .

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시 형태들을 설명한다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

도 1은 예시적인 실시예에 따른 웨이퍼 이송 장치를 구비하는 증착 설비를 나타내는 개략 구성도이고, 도 2는 도 1의 A부를 나타내는 단면도이고, 도 3은 홀더는 나타내는 사시도이다.Fig. 1 is a schematic configuration diagram showing a deposition facility having a wafer transfer apparatus according to an exemplary embodiment, Fig. 2 is a cross-sectional view showing part A of Fig. 1, and Fig. 3 is a perspective view showing a holder.

도 1 내지 도 3을 참조하면, 예시적인 실시예에 따른 증착 장치(100)는 일예로서, 챔버(120), 히터(130), 웨이퍼 이송부(140), 적층 방지 부재(150), 홀더(160) 및 와셔(170)를 포함한다.1 to 3 , a deposition apparatus 100 according to an exemplary embodiment is, as an example, a chamber 120 , a heater 130 , a wafer transfer unit 140 , an anti-stacking member 150 , and a holder 160 . ) and a washer 170 .

한편, 챔버(120)는 내부 공간을 가지며, 복수개의 히터(130)가 챔버(120)의 내부 공간에 설치된다. 일예로서, 히터(130)는 챔버(120)에 4개가 상호 이격 배치되도록 구비될 수 있다. 그리고, 히터(130)는 대략 웨이퍼의 형상에 대응되는 형상을 가질 수 있다. 한편, 챔버(120)의 측면에는 웨이퍼(W)가 공급되는 웨이퍼 이송구(122)가 구비될 수 있다. 웨이퍼 이송구(122)를 통해 챔버(120)로 공급된 웨이퍼는 복수개의 히터(130) 중 어느 하나에 안착된다.Meanwhile, the chamber 120 has an internal space, and a plurality of heaters 130 are installed in the internal space of the chamber 120 . As an example, four heaters 130 may be provided in the chamber 120 to be spaced apart from each other. In addition, the heater 130 may have a shape substantially corresponding to the shape of the wafer. On the other hand, the side of the chamber 120 may be provided with a wafer transfer port 122 to which the wafer (W) is supplied. The wafer supplied to the chamber 120 through the wafer transfer port 122 is seated on any one of the plurality of heaters 130 .

그리고, 공정 진행 시 웨이퍼(W)는 히터(130)의 상부에 안착된다. 또한, 웨이퍼(W)의 이송 시 웨이퍼(W)는 홀더(160)에 안착된 상태에서 웨이퍼 이송부(140)에 의해 승강 및 회전된다.In addition, during the process, the wafer W is seated on the heater 130 . In addition, when the wafer W is transferred, the wafer W is lifted and rotated by the wafer transfer unit 140 while seated on the holder 160 .

히터(130)는 대략 원형의 플레이트 형상을 가지며 웨이퍼(미도시)를 가열할 수 있도록 웨이퍼보다 큰 크기를 가질 수 있다. 한편, 히터(130)는 상기한 바와 같이 챔버(120)에 4개가 원주 방향을 따라 상호 이격 배치될 수 있다. 그리고, 히터(130)는 챔버(120)에 고정 설치될 수 있다. 일예로서, 히터(130)에는 원주 방향을 따라 복수개의 설치홈(132, 도 2 참조)이 구비될 수 있다. 설치홈(132)에는 후술할 적층 방지 부재(150)의 연장부(152)와 홀더(160)가 삽입 배치될 수 있다. 다시 말해, 증착 공정의 진행 시 설치홈(132)에는 연장부(152)와 홀더(160)가 삽입 배치된다. 그리고, 웨이퍼 이송부(140)가 상승하는 경우 연장부(152)와 홀더(160)는 설치홈(132)으로부터 상부측으로 이동되어 설치홈(132)으로부터 이탈된다.The heater 130 has a substantially circular plate shape and may have a size larger than a wafer to heat a wafer (not shown). Meanwhile, four heaters 130 may be disposed to be spaced apart from each other in the circumferential direction in the chamber 120 as described above. In addition, the heater 130 may be fixedly installed in the chamber 120 . As an example, the heater 130 may be provided with a plurality of installation grooves 132 (refer to FIG. 2 ) along the circumferential direction. An extension part 152 and a holder 160 of the anti-stacking member 150 to be described later may be inserted into the installation groove 132 . In other words, the extension part 152 and the holder 160 are inserted into the installation groove 132 during the deposition process. In addition, when the wafer transfer unit 140 rises, the extension 152 and the holder 160 move upward from the installation groove 132 to separate from the installation groove 132 .

여기서, 원주 방향이라고 하면 챔버(120)의 외주면과 히터(130)의 외주면을 따라 회전되는 방향을 의미한다.Here, the circumferential direction means a direction of rotation along the outer circumferential surface of the chamber 120 and the outer circumferential surface of the heater 130 .

웨이퍼 이송부(140)는 복수개의 히터(130)의 주위에 배치되며 히터(130)를 감싸도록 배치될 수 있다. 다시 말해, 웨이퍼 이송부(140)는 히터(130)를 제외한 영역에 배치되는 형상을 가질 수 있다. 한편, 웨이퍼 이송부(140)는 챔버(120)에 승강 및 회전 가능하게 설치될 수 있다. 즉, 히터(130)에 안착된 웨이퍼(W)를 상승 및 회전시키도록 웨이퍼 이송부(140)는 챔버(120)에 승강 및 회전 가능하게 설치될 수 있다. 한편, 웨이퍼 이송부(140)는 챔버(120)의 이동축(124)에 설치되어 이동축(124)과 함께 승강 및 회전될 수 있다.The wafer transfer unit 140 may be disposed around the plurality of heaters 130 and may be disposed to surround the heaters 130 . In other words, the wafer transfer unit 140 may have a shape disposed in an area excluding the heater 130 . On the other hand, the wafer transfer unit 140 may be installed in the chamber 120 to be lifted and rotatable. That is, the wafer transfer unit 140 may be rotatably installed in the chamber 120 to lift and rotate the wafer W seated on the heater 130 . Meanwhile, the wafer transfer unit 140 is installed on the moving shaft 124 of the chamber 120 to be lifted and rotated together with the moving shaft 124 .

적층 방지 부재(150)는 웨이퍼 이송부(140)에 설치되며 대략 히터(130)의 주위를 감싸는 원형의 고리 형상을 가질 수 있다. 한편, 적층 방지 부재(150)에는 히터(130)의 설치홈(132)에 삽입되도록 하부로 연장 형성되는 연장부(152)가 구비될 수 있다. 그리고, 연장부(152)에는 홀더(160)와의 조립을 위한 나사산(152a)이 구비될 수 있다. 일예로서, 적층 방지 부재(150)는 세라믹 재질로 이루어질 수 있다.The anti-stacking member 150 is installed on the wafer transfer unit 140 and may have a circular annular shape substantially surrounding the heater 130 . On the other hand, the anti-stacking member 150 may be provided with an extension portion 152 extending downwardly to be inserted into the installation groove 132 of the heater 130 . In addition, the extension 152 may be provided with a screw thread 152a for assembling with the holder 160 . As an example, the anti-stacking member 150 may be made of a ceramic material.

홀더(160)는 연장부(152)에 설치되어 웨이퍼(W)가 히터(130)의 상면에 안착되는 경우 설치홈(132) 내에 배치된다. 한편, 홀더(160)는 웨이퍼 이송부(140)가 승강하는 경우 웨이퍼(W)의 저면을 지지하여 웨이퍼(W)를 승강시키는 역할을 수행한다. 일예로서, 홀더(160)는 원통 형상을 가지며 일단이 직경이 감소하는 깔때기 형상(161a)을 가지는 바디(161)와, 바디(161)의 일단으로부터 연장되며 웨이퍼(W)를 지지하는 지지부(162)와, 상기 바디(162)의 타단으로부터 연장되는 육각 기둥 형상을 가지는 공구 결합부(163) 및 공구 결합부(163)로부터 연장되는 나사부(164)를 구비할 수 있다.The holder 160 is installed in the extension part 152 and is disposed in the installation groove 132 when the wafer W is seated on the upper surface of the heater 130 . On the other hand, the holder 160 serves to lift the wafer W by supporting the bottom surface of the wafer W when the wafer transfer unit 140 is lifted. As an example, the holder 160 has a body 161 having a cylindrical shape and a funnel shape 161a having a reduced diameter at one end, and a support part 162 extending from one end of the body 161 and supporting the wafer W. ), and a tool coupling part 163 having a hexagonal pillar shape extending from the other end of the body 162 and a threaded part 164 extending from the tool coupling part 163 may be provided.

한편, 지지부(162)는 단면이 원형인 바 형상을 가질 수 있다. 그리고, 지지부(162)의 끝단의 직경이 다른 부분의 직경보다 크게 형성될 수 있다.Meanwhile, the support part 162 may have a bar shape having a circular cross-section. In addition, the diameter of the end of the support portion 162 may be formed larger than the diameter of the other portion.

이와 같이, 지지부(162)의 단면이 원형이 바 형상을 가지므로, 홀더(160)를 적층 방지 부재(150)에 나사 결합을 하더라도 홀더(160)의 회전 정도에 관계없이 홀더(160)와 웨이퍼(W)의 접촉 면적이 일정할 수 있다.As such, since the cross-section of the support part 162 has a circular bar shape, even if the holder 160 is screwed to the stacking prevention member 150 , the holder 160 and the wafer are rotated regardless of the degree of rotation of the holder 160 . The contact area of (W) may be constant.

그리고, 홀더(160)가 설치홈(152) 내에 삽입 배치되므로 클리닝 가스에 의한 부식을 저감시킬 수 있다.In addition, since the holder 160 is inserted and disposed in the installation groove 152 , it is possible to reduce corrosion caused by the cleaning gas.

와셔(170)는 연장부(152)와 홀더(160) 사이에 배치되며 홀더(160)를 연장부(152)에 설치할 때 홀더(160)와 연장부(152)에 가해지는 가압력을 완화시키는 역할을 수행한다.The washer 170 is disposed between the extension part 152 and the holder 160 and serves to relieve the pressing force applied to the holder 160 and the extension part 152 when the holder 160 is installed on the extension part 152 . carry out

상기한 바와 같이, 와셔(170)와 홀더(160)가 설치홈(132) 내에 배치되므로 클리닝 가스에 의한 부식을 보다 저감시킬 수 있다. As described above, since the washer 170 and the holder 160 are disposed in the installation groove 132 , corrosion by the cleaning gas can be further reduced.

그리고, 홀더(160)의 지지부(162)가 단면이 원형인 형상을 가지므로 홀더(160)의 회전 정도에 관계 없이 홀더(160)와 웨이퍼(W)의 접촉 면적이 일정할 수 있다.In addition, since the support portion 162 of the holder 160 has a circular cross-section, the contact area between the holder 160 and the wafer W may be constant regardless of the degree of rotation of the holder 160 .

이에 따라, 웨이퍼(W)가 기울어져서 이송되는 것을 방지할 수 있다.Accordingly, it is possible to prevent the wafer W from being tilted and transferred.

도 4는 도 2의 변형 실시예를 나타내는 단면도이고, 도 5는 도 4의 홀더를 나타내는 사시도이다.4 is a cross-sectional view illustrating a modified embodiment of FIG. 2 , and FIG. 5 is a perspective view illustrating the holder of FIG. 4 .

도 4 및 도 5를 참조하면, 홀더(260)는 연장부(152)에 설치되어 웨이퍼(W)가 히터(130)의 상면에 안착되는 경우 설치홈(132) 내에 배치된다. 한편, 홀더(260)는 웨이퍼 이송부(140, 도 1 참조)가 승강하는 경우 웨이퍼(W)의 저면을 지지하여 웨이퍼(W)를 승강시키는 역할을 수행한다. 일예로서, 홀더(260)는 직육면체 형상을 가지며 일단에 경사면(261a)을 가지는 바디(261)와, 바디(261)의 일단으로부터 연장되며 웨이퍼(W)를 지지하는 지지부(262)와, 상기 바디(261)의 타단으로부터 연장되는 육각 기둥 형상을 가지는 공구 결합부(263) 및 공구 결합부(263)로부터 연장되는 나사부(264)를 구비할 수 있다.4 and 5 , the holder 260 is installed in the extension part 152 and is disposed in the installation groove 132 when the wafer W is seated on the upper surface of the heater 130 . Meanwhile, when the wafer transfer unit 140 (refer to FIG. 1 ) is lifted, the holder 260 supports the bottom surface of the wafer W to lift the wafer W. Referring to FIG. As an example, the holder 260 has a rectangular parallelepiped shape and includes a body 261 having an inclined surface 261a at one end, a support 262 extending from one end of the body 261 and supporting the wafer W, and the body A tool coupling portion 263 having a hexagonal column shape extending from the other end of 261 and a threaded portion 264 extending from the tool coupling portion 263 may be provided.

한편, 지지부(262)는 바디(261)로부터 멀어지는 측으로 폭이 감소하도록 형성될 수 있다. Meanwhile, the support 262 may be formed to decrease in width toward a side away from the body 261 .

이와 같이, 홀더(260)가 히터(130)의 설치홈(132) 내에 삽입 배치되므로 클리닝 가스에 의한 부식을 저감시킬 수 있다.As described above, since the holder 260 is inserted and disposed in the installation groove 132 of the heater 130 , corrosion by the cleaning gas can be reduced.

이상에서 본 발명의 실시예에 대하여 상세하게 설명하였지만 본 발명의 권리범위는 이에 한정되는 것은 아니고, 청구범위에 기재된 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 다양한 수정 및 변형이 가능하다는 것은 당 기술분야의 통상의 지식을 가진 자에게는 자명할 것이다.Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and variations are possible within the scope without departing from the technical spirit of the present invention described in the claims. It will be apparent to those of ordinary skill in the art.

100 : 증착 장치
120 : 챔버
130 : 히터
140 : 웨이퍼 이송부
150 : 적층 방지 부재
160, 260 : 홀더
170 : 와셔100: deposition device
120: chamber
130: heater
140: wafer transfer unit
150: anti-stacking member
160, 260: holder
170: washer

Claims (8)

내부 공간을 가지는 챔버;
상기 챔버의 내부 공간에 배치되며, 증착 공정 시 상부에 웨이퍼가 배치되고 원주 방향을 따라 복수개가 배치되는 설치홈이 구비되는 복수개의 히터;
상기 복수개의 히터의 주위에 배치되며 승강 및 회전되는 웨이퍼 이송부;
상기 웨이퍼 이송부에 설치되며 상기 웨이퍼 이송부가 베이스 위치에 배치되는 경우 상기 설치홈에 삽입되는 연장부를 구비하는 적층 방지 부재;
상기 연장부의 측면에 설치되어 상기 웨이퍼 이송부가 베이스 위치에 배치되는 경우 상기 설치홈 내에 배치되는 홀더; 및
상기 연장부와 상기 홀더 사이에 배치되는 와셔;
를 포함하는 증착 장치.
a chamber having an interior space;
a plurality of heaters disposed in the inner space of the chamber and having a wafer disposed thereon during a deposition process and provided with a plurality of installation grooves disposed along a circumferential direction;
a wafer transfer unit disposed around the plurality of heaters and being lifted and rotated;
an anti-stacking member installed in the wafer transfer part and having an extension part inserted into the installation groove when the wafer transfer part is disposed in a base position;
a holder installed on a side surface of the extension part and disposed in the installation groove when the wafer transfer part is disposed at a base position; and
a washer disposed between the extension and the holder;
A deposition apparatus comprising a.
 제1항에 있어서,
상기 홀더는 원통 형상을 가지며 일단이 직경이 감소하는 깔때기 형상을 가지는 바디와, 상기 바디의 일단으로부터 연장되며 웨이퍼를 지지하는 지지부를 구비하는 증착 장치.
According to claim 1,
The holder includes a body having a cylindrical shape, one end having a funnel shape with a decreasing diameter, and a support portion extending from one end of the body to support the wafer.
 제2항에 있어서,
상기 지지부는 단면이 원형인 바 형상을 가지는 증착 장치.
3. The method of claim 2,
The support portion is a deposition apparatus having a bar shape having a circular cross-section.
 제2항에 있어서,
상기 홀더는 상기 바디의 타단에 배치되며 육각 기둥 형상을 가지는 공구 결합부 및 공구 결합부로부터 연장되는 나사부를 더 구비하는 증착 장치.
3. The method of claim 2,
The holder is disposed at the other end of the body, the deposition apparatus further comprising a tool coupling portion having a hexagonal column shape and a screw portion extending from the tool coupling portion.
 제1항에 있어서,
상기 홀더는 직육면체 형상을 가지며 일단에 경사면을 가지는 바디와, 상기 바디의 일단으로부터 연장되며 웨이퍼를 지지하는 지지부를 구비하는 증착 장치.
According to claim 1,
The holder includes a body having a rectangular parallelepiped shape and having an inclined surface at one end, and a support part extending from one end of the body to support a wafer.
 제5항에 있어서,
상기 지지부는 폭이 감소하도록 형성되는 증착 장치.
6. The method of claim 5,
A deposition apparatus in which the support portion is formed to have a reduced width.
 제5항에 있어서,
상기 홀더는 상기 바디의 타단에 배치되며 육각 기둥 형상을 가지는 공구 결합부 및 공구 결합부로부터 연장되는 나사부를 더 구비하는 증착 장치.
6. The method of claim 5,
The holder is disposed at the other end of the body, the deposition apparatus further comprising a tool coupling portion having a hexagonal column shape and a screw portion extending from the tool coupling portion.
 제1항에 있어서,
상기 홀더와 상기 적층 방지 부재는 세라믹 재질로 이루어지는 증착 장치.


According to claim 1,
The holder and the deposition preventing member are made of a ceramic material.
KR1020200056370A 2020-05-12 2020-05-12 Deposition apparatus KR20210138833A (en)

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115116908A (en) * 2022-08-22 2022-09-27 四川洪芯微科技有限公司 Wafer groove corrosion device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115116908A (en) * 2022-08-22 2022-09-27 四川洪芯微科技有限公司 Wafer groove corrosion device
CN115116908B (en) * 2022-08-22 2023-01-10 四川洪芯微科技有限公司 Wafer groove corrosion device

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