KR20210114340A - Film thickness measuring apparatus, film thickness measuring method, and film forming system and film forming method - Google Patents

Abstract

An object of the present invention is to provide a film thickness measuring device, a film thickness measuring method and a film forming system capable of measuring a film thickness of a very thin film in-situ after forming a film. A film thickness measuring device according to the present invention is a film thickness measuring device for measuring a film thickness of a film formed on a substrate in-situ in a film forming system. The film thickness measuring device comprises: a stage for arranging the substrate on which the film is formed; a measurement light emission/detection unit having a light emission unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving reflected light reflected from the substrate; a moving mechanism for moving an irradiation point of the light on the substrate; a rangefinder for measuring the distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjusting mechanism for adjusting the distance between the light receiving sensor and the irradiation point on the substrate.

Description

A film thickness measuring apparatus and a film thickness measuring method, and a film forming system and a film forming method

The present disclosure relates to a film thickness measuring apparatus and a film thickness measuring method, and a film forming system and a film forming method.

For example, a device such as a magnetoresistive random access memory (MRAM) is manufactured by stacking a plurality of very thin films. As a system for forming such a laminated film into a film, it is known that a plurality of processing modules are connected to a vacuum transfer chamber to sequentially form each film (for example, Patent Document 1).

On the other hand, it is required to confirm whether or not the formed film has a desired film thickness, and Patent Documents 2 and 3 disclose a technique for measuring the formed film in-situ.

[Patent Document 1] Japanese Patent No. 6160614 [Patent Document 2] Japanese Patent Laid-Open No. 5-149720 [Patent Document 3] Japanese Patent Laid-Open No. Hei 11-330185

The present disclosure provides a film thickness measuring apparatus and a film thickness measuring method capable of in-situ measurement of the film thickness of a very thin film after film formation, and a film forming system and film forming method.

A film thickness measuring apparatus according to an aspect of the present disclosure is a film forming system having a processing module for forming a film on a substrate, and a transfer module for conveying a substrate to the processing module, wherein the film formed on the substrate in-situ A film thickness measuring apparatus for measuring film thickness, comprising: a stage for arranging a substrate on which a film is formed; a light output unit for emitting light for film thickness measurement toward a substrate on the stage; a measuring light emitting/detecting unit having a light receiving sensor; a moving mechanism for moving the irradiation point of the light on the substrate; a rangefinder measuring a distance between the light receiving sensor and the irradiation point on the substrate; and the light receiving sensor; and a distance adjusting mechanism for adjusting the distance between the irradiation points on the substrate.

According to the present disclosure, there is provided a film thickness measuring apparatus, a film thickness measuring method, and a film forming system capable of in-situ measuring the film thickness of a very thin film after forming a film.

BRIEF DESCRIPTION OF THE DRAWINGS It is the top view which showed typically the film-forming system provided with the film thickness measuring apparatus.
2 is a cross-sectional view showing an example of a film thickness measuring device.
Fig. 3 is a view for explaining the procedure of the previous step of measuring the film thickness of the film formed on the substrate.
4 is a view for explaining a procedure for measuring a distance in a Z direction of a measurement point of a substrate.
5 is a view for explaining a procedure for actually performing film thickness measurement at the film thickness measurement position where the distance in the Z direction is measured.
Fig. 6 is a diagram showing the relationship between the relative working distance (the amount of change in the distance between the light receiving sensor and the measurement object) and the measured film thickness value.
7 is a schematic diagram illustrating an actual wafer on which a test pad capable of measuring a film thickness is formed.
Fig. 8 is a partial cross-sectional view showing an essential part of another example of the film thickness measuring apparatus.
Fig. 9 is a partial cross-sectional view showing the main part of another example of the film thickness measuring apparatus.
10 is a cross-sectional view showing an embodiment in which a film thickness measuring device is provided in a portion of the transport module adjacent to the processing module.
11 is a plan view schematically showing an example of a film forming system in which a film thickness measuring device is provided in all transport modules.
12 is a view showing a state in which light is supplied by branching from one light source unit to a measurement light output/detection unit of each film thickness measurement apparatus when a plurality of film thickness measurement apparatuses are used.
Fig. 13 is a cross-sectional view showing an embodiment in which a film thickness measuring device is provided in a transfer section between two transfer modules.
14 is a flowchart illustrating a sequence in which a plurality of films are continuously formed in the film forming system 1 and the film thickness of each film is measured.
15 is a cross-sectional view for explaining the main steps of the sequence in the film forming system 1 when a plurality of films are continuously formed and the film thickness of each film is measured.
Fig. 16 is a cross-sectional view for explaining a process in the case where the film thickness measuring device is disposed on the transfer module and the sequence of Fig. 14 is performed.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is concretely described with reference to an accompanying drawing.

<Film forming system>

BRIEF DESCRIPTION OF THE DRAWINGS It is the top view which showed typically the film-forming system provided with the film thickness measuring apparatus.

The film forming system 1 includes a processing unit 2 that performs a plurality of processes including film formation of a magnetic film, and an unloading/carrying-in unit 3 holding a plurality of substrates and carrying out/loading substrates with respect to the processing unit 2 . ) and a control unit 4 . The substrate is not particularly limited, and is, for example, a semiconductor wafer (hereinafter simply referred to as a wafer).

The processing unit 2 includes a plurality of (eight in this example) processing modules PM1 to PM8 for performing a film forming process or the like on the substrate W, and a substrate W for the plurality of processing modules PM1 to PM8. ) having a plurality of conveying modules TM1 to TM4 sequentially conveyed therein, and a film thickness measuring device 35 for measuring the film thickness of the formed film.

The processing modules PM1 to PM8 are for forming a plurality of films on the substrate, and include those that actually perform film formation processing such as sputtering, and those that perform cleaning processing, pretreatment, cooling processing, and the like. In the processing module, processing in a vacuum is performed. In addition, although the example of eight processing modules is shown here, it is not limited to this, What is necessary is just to set the number of processing modules to a required number according to a process.

The conveying modules TM1 to TM4 have containers 30a, 30b, 30c, and 30d each having a hexagonal planar shape held in a vacuum, and conveying mechanisms 31a, 31b, 31c, and 31d provided in the respective containers. Between the transfer mechanisms of the transfer modules TM1 to TM4, transfer units 41, 42, 43 as transfer buffers are provided, respectively. The containers 30a, 30b, 30c, and 30d of the transfer modules TM1 to TM4 communicate with each other.

The transfer unit 12 is configured by arranging a plurality of transfer modules TM1 to TM4 in a line in the Y direction in the figure, and the eight processing modules PM1 to PM8 are transferred via an openable and openable gate valve G Four are connected to both sides of the part 12 at a time. The gate valve G of the processing modules PM1 to PM8 is opened when the transport mechanism of the transport module accesses the processing module, and is closed when processing is being performed. Moreover, the film thickness measuring apparatus 35 is connected to the front-end|tip of the container 30d of the conveyance part 12 via the gate valve G3.

The carrying out/carrying-in part 3 is connected to the one end side of the processing part 2 . The carry-in/out unit 3 includes an air transfer chamber (EFEM) 21 , three load ports 22 connected to the air transfer chamber 21 , an aligner module 23 , and two load lock modules. It has (LLM1 and LLM2), and the conveyance apparatus 24 provided in the standby|standby conveyance chamber 21. FIG.

The air transfer chamber 21 has a rectangular parallelepiped shape with the X direction as the longitudinal direction in the figure. The three load ports 22 are provided in the long side wall portion opposite to the processing unit 2 of the atmospheric transfer chamber 21 . Each load port 22 has a mounting table 25 and a transfer port 26 , and a FOUP 20 , which is a wafer accommodating container for accommodating a plurality of wafers, is disposed on the mounting table 25 , and the mounting table 25 . The phase FOUP 20 is connected to the atmospheric transfer chamber 21 through the transfer port 26 in a sealed state.

The aligner module 23 is connected to one short side wall of the atmospheric transfer chamber 21 . In the aligner module 23, the wafer W is aligned.

The two load lock modules LLM1 and LLM2 are for enabling the transfer of the wafer W between the atmospheric transfer chamber 21 , which is atmospheric pressure, and the transfer unit 12 , which is a vacuum atmosphere, the atmospheric pressure and the transfer unit 12 . ) and the pressure varies between vacuums of the same degree. The two load-lock modules LLM1 and LLM2 each have two transfer ports, and one transfer port is connected to the long side wall of the standby transfer chamber 21 on the processing unit 2 side through a gate valve G2, The other conveyance port is connected to the container 30a of the conveyance part 12 in the processing part 2 via the gate valve G1.

The load lock module LLM1 is used when transferring the wafer W from the unloading/loading unit 3 to the processing unit 2 , and the load lock module LLM2 unloads/removing the wafer W from the processing unit 2 . It is used when conveying to the carrying-in unit 3 . In addition, the load lock modules LLM1 and LLM2 may be configured to perform processing such as an outgassing process.

The transfer device 24 in the standby transfer chamber 21 has a multi-joint structure, and transfers the wafer W to the FOUP 20 and the load lock modules LLM1 and LLM2 on the load port 22 . . Specifically, the transfer device 24 takes out the unprocessed wafer W from the FOUP 20 of the load port 22 , and transfers the wafer W to the load lock module LLM1 . In addition, the transfer device 24 receives the processed wafer W transferred from the processing unit 2 to the load lock module LLM2 , and transfers the wafer W to the FOUP 20 of the load port 22 . do. In addition, although the example in which the pick which receives the wafer W of the conveyance apparatus 24 is one in FIG. 1 is shown, two picks may be sufficient.

In the processing unit 2 , processing modules PM1 , PM3 , PM5 , PM7 are sequentially disposed on one side of the conveying unit 12 from the load lock module LLM1 side, and the other side of the conveying unit 12 . On the side, the processing modules PM2, PM4, PM6, PM8 are arranged sequentially from the load lock module LLM2 side. Moreover, in the conveyance part 12, the conveyance modules TM1, TM2, TM3, TM4 are arrange|positioned sequentially from the load-lock module LLM1 and LLM2 side.

The transfer mechanism 31a of the transfer module TM1 is accessible to the load-lock modules LLM1 and LLM2, the processing modules PM1 and PM2, and the transfer unit 41 . The transfer mechanism 31b of the transfer module TM2 is accessible to the processing modules PM1 , PM2 , PM3 , and PM4 , and the transfer units 41 and 42 . The transfer mechanism 31c of the transfer module TM3 is accessible to the processing modules PM3 , PM4 , PM5 , and PM6 , and the transfer units 42 and 43 . The transfer mechanism 31d of the transfer module TM4 is accessible to the processing modules PM5 , PM6 , PM7 , and PM8 , the transfer unit 43 , and the film thickness measurement device 35 .

The film thickness measuring device 35 measures the film thickness of a film formed by a certain processing module and the film thickness of the laminated film after being laminated in-situ. In addition, the position of the film thickness measuring apparatus 35 is not limited to the position of this example. In addition, the number of the film thickness measuring apparatuses 35 may be plural. Details of the film thickness measuring device 35 will be described later.

Since the transfer apparatus 24 and the transfer modules TM1 to TM4 of the transfer unit 12 are configured in this way, the substrate W taken out of the FOUP 20 is transferred to the processing module 2 in the processing unit 2 . (PM1, PM3, PM5, PM7, PM8, PM6, PM4, PM2) It is serially conveyed in one direction along a substantially U-shaped path in order, processed by each processing module, and returned to the FOUP 20 .

The control unit 4 includes each component of the film forming system 1 , for example, conveying modules TM1 to TM4 (transfer mechanisms 31a to 31d), and conveying apparatus 24 , processing modules PM1 to PM8; The load-lock modules LLM1 and LLM2, the transfer unit 12, the gate valves G, G1, G2, G3, the film thickness measurement device 35, and the like are controlled. The control unit 4 is constituted by a computer, and includes a main control unit having a CPU, an input device, an output device, a display device, and a storage device. The storage device is provided with a storage medium in which a processing recipe is stored. The main control unit causes the film forming system 1 to execute a predetermined operation based on the processing recipe called from the storage medium.

In the film-forming system 1 comprised in this way, first, the board|substrate W is taken out from the FOUP 20 on the load port 22 by the conveyance apparatus 24, and it is conveyed to the aligner module 23. As shown in FIG. After the wafer W is aligned by the aligner module 23 , the substrate W is taken out by the transfer device 24 and transferred to the load lock module LLM1 . At this time, the load lock module LLM1 is at atmospheric pressure, and after receiving the substrate W, it is evacuated.

Then, the board|substrate W is taken out in the load-lock module LLM1 by the conveyance mechanism 31a of the conveyance module TM1 in the conveyance part 12. As shown in FIG. The taken out board|substrate W is conveyed to the processing module PM1 by the conveyance mechanism 31a, and predetermined processing is performed in the processing module PM1.

After the processing in the processing module PM1 is finished, the unloading-side gate valve G of the processing module PM1 is opened, and the substrate W is unloaded by the conveying mechanism 31b of the conveying module TM2. . The carried out board|substrate W is conveyed to the processing module PM3 by the conveyance mechanism 31b, and predetermined processing is performed in the processing module PM3.

After the processing in the processing module PM3 is finished, the unloading-side gate valve G of the processing module PM3 is opened, and the substrate W is unloaded by the conveying mechanism 31c of the conveying module TM3. . The carried out board|substrate W is conveyed to the processing module PM5 by the conveyance mechanism 31c, and predetermined processing is performed in the processing module PM5.

After the processing in the processing module PM5 is finished, the unloading-side gate valve G of the processing module PM5 is opened, and the substrate W is unloaded by the conveying mechanism 31d of the conveying module TM4. . The carried out board|substrate W is conveyed to the processing module PM7 by the conveyance mechanism 31d, and predetermined processing is performed in the processing module PM7.

After the processing in the processing module PM7 is finished, the gate valve G of the processing module PM7 is opened, and the substrate W is unloaded by the transfer mechanism 31d of the transfer module TM4 . The carried out board|substrate W is conveyed to the processing module PM8 by the conveyance mechanism 31d, and predetermined processing is performed in the processing module PM8.

Thereafter, the substrate W is sequentially transferred to the processing modules PM6, PM4, PM2 by the transfer mechanisms 31c, 31b, and 31a of the transfer modules TM3, TM2, and TM1, and in these, in advance A predetermined process is performed.

After the processing in the processing module PM2 is finished, the substrate W is conveyed to the load lock module LLM2 by the conveying mechanism 31a. At this time, the load lock module LLM2 is in a vacuum, and after receiving the wafer W, it is opened to the atmosphere. Thereafter, the substrate W in the load lock module LLM2 is transferred into the FOUP 20 of the load port 22 by the transfer device 24 .

As described above, a series of film forming processes can be performed by sequentially conveying the substrate W in a U-shape to a plurality of processing modules.

In the course of this series of film forming processes, after a certain film is formed, when it is necessary to measure the film thickness of the film, the film-formed substrate W is conveyed to the film thickness measuring device 35, and the film thickness is measured. do At this time, the substrate W is unloaded from the processing module after film formation by the transport mechanism of the corresponding transport module, transferred to one or more transport mechanisms as necessary, and then transferred to the transport mechanism 31d by the film thickness measuring device ( 35) is returned. The measurement of the film thickness may be performed each time a film formation process is performed with each processing module for film formation, may be performed after film formation processing is performed by several processing modules, or may be performed after all films are formed.

<Film thickness measuring device>

Next, the film thickness measuring apparatus will be described in detail.

2 is a cross-sectional view showing an example of a film thickness measuring device. As shown in FIG. 2 , the film thickness measuring apparatus 35 of this example has a chamber 101 . In the chamber 101 , a stage 102 on which the substrate W is disposed and capable of being rotated and moved up and down is provided. A shaft 103 is connected to the center of the bottom surface of the stage 102 . The shaft 103 extends downward of the chamber 101 through a through hole 108 formed in the bottom wall 101c of the chamber 101 , and is connected to the rotation mechanism 104 . The stage 102 is rotated via the shaft 103 by the rotating mechanism 104 . Further, the rotating mechanism 104 is attached to the lifting plate 105 , and the lifting mechanism 106 is connected to the lifting plate 105 . The lifting mechanism 106 is constituted of, for example, a piezoelectric actuator, and the height position of the stage 102 can be finely adjusted via the lifting plate 105 and the shaft 103 . Between the bottom wall 101c and the lifting plate 105 , a telescopic bellows 107 is airtightly provided so as to surround the shaft 103 .

An exhaust port 110 is formed in the bottom wall 101c of the chamber 101, an exhaust pipe 111 is connected to the exhaust port 110, and the exhaust pipe 111 has a pressure control valve or a vacuum pump. A mechanism 112 is connected. By operating the exhaust mechanism 112, the inside of the chamber 101 is brought to a desired vacuum state.

The side wall 101a of the chamber 101 is provided with a board|substrate carry-in/out port 113, and the board|substrate carry-in/out port 113 is openable and openable by the gate valve G3 mentioned above.

In the ceiling wall (lead) 101b of the chamber 101, an elongated through hole 114 extending in the radial direction of the substrate W is formed. The through hole 114 is covered by, for example, a light transmitting member 130 made of quartz through which light for film thickness measurement and a laser for distance measurement, which will be described later, pass through. The space between the light transmitting member 130 and the ceiling wall 101b is sealed with a sealing ring 131 .

A concave portion 121 is formed on the upper surface of the stage 102 , and the reference member 120 is disposed in the concave portion 121 . The reference member 120 is made of the same material as the base portion (base) of the substrate W, for example, silicon when the substrate W is a silicon wafer, and is used to measure the output light amount of the light source. It is also used as a reference for film thickness measurement. In addition, the stage 102 is provided with a board|substrate conveyance lifting pin (not shown) so that it can protrude with respect to the surface of the stage 102. As shown in FIG. In addition, the stage 102 may be provided with the heater which heat-processes with respect to the board|substrate W.

In the atmospheric atmosphere region above the position corresponding to the through hole 114 of the chamber 101, the light emitting/receiving assembly 140 is provided. The light emitting/receiving assembly 140 includes a main body 141 , a measurement light emitting/detecting unit 142 , and a laser emitting/detecting unit 143 for measuring distance. The measurement light emission/detection unit 142 and the laser emission/detection unit 143 for distance measurement are attached to the main body 141 in an adjacent state. Above the chamber 101 , a linear guide 133 , which guides the main body 141 , is horizontally disposed while being supported by the support member 134 on the ceiling wall 101b of the chamber 101 .

The body portion 141 is configured as a slider guided by a linear guide 133 , and the body portion 141 is driven by a drive motor 144 . Accordingly, the entire light emitting/receiving assembly 140 having the measurement light emitting/detecting unit 142 and the distance measuring laser emitting/detecting unit 143 is configured to be horizontally scanned along the linear guide 133, have. Then, the light emitted from the measurement light emission/detection unit 142 and the laser light emitted from the laser emission/detection unit 143 for distance measurement pass through the light-transmitting member 130 and the through-hole 114 to the substrate W It is irradiated onto the image, and the irradiation point is scannable in the radial direction (R direction). In addition, when the substrate W on the stage 102 is rotated by the rotation mechanism 104, the light emitted from the measurement light emitting/detection unit 142 and the laser emission/detection unit 143 for distance measurement. The irradiation point of the laser beam can be scanned in the circumferential direction (the Θ direction) on the substrate W. That is, the drive motor 144 and the rotation mechanism 104 are the irradiation points on the substrate of the light emitted from the measurement light emission/detection unit 142 and the laser light emitted from the laser emission/detection unit 143 for distance measurement. It functions as a moving mechanism that moves the

The measurement light output/detection unit 142 has a light output unit that emits the light L1 for film thickness measurement toward the substrate W, and a light receiving sensor that detects the reflected light of the emitted light. In the light output unit, light is guided from the light source unit 145 through the optical fiber 146 . The light source unit 145 includes a light source, an amplifier for amplifying light from the light source, an optical system, a sensor, and the like. As the light source, a lamp light source that emits broad light having a short wavelength of about 800 nm or less can be used. The film thickness measurement is performed by spectral interferometry using such a light source. Thereby, the film thickness of an ultra-thin film with a film thickness of 10 nm or less, and also 1 nm or less can be measured. The light receiving sensor receives the reflected light emitted from the light output unit and reflected from the substrate W. The detection signal detected by the light receiving sensor is sent to the film thickness measuring unit 147, and the film thickness of the film on the substrate W is measured. The film thickness measurement unit is constituted by the measurement light emission/detection unit 142 , the light source unit 145 , the optical fiber 146 , and the film thickness measurement unit 147 .

The laser emission/detection unit 143 for distance measurement includes a laser emission unit that emits the laser L2 for distance measurement downward (stage 102), and a distance measurement light receiving sensor that receives the reflected light of the laser. . A laser beam is guided from the laser light source unit 148 through the optical fiber 149 to the laser emission unit. The detection signal detected by the light receiving sensor for measuring the distance is sent to the distance measuring unit 150, and the distance d between the light receiving sensor of the measuring light emitting/detecting unit 142 and the substrate W is measured. A laser rangefinder is constituted by the laser emission/detection unit 143 for distance measurement, the laser light source unit 148 , the optical fiber 149 , and the distance measurement unit 150 .

A cooling fan 160 for cooling the light emitting/receiving assembly 140 is provided above the chamber 101 . The cooling fan 160 is effective especially when the stage 102 is heated by a heater.

In addition, a cover may be provided in the optical path of the measurement light emission/detection unit 142 and the laser emission/detection unit 143 for distance measurement. By providing the cover, the adverse effect on the sensor or the like due to light leakage can be prevented.

Next, the measurement procedure in the film thickness measuring apparatus 35 comprised in this way is demonstrated based on FIGS.

3 is a view for explaining the procedure of the previous step of measuring the film thickness of the film formed on the substrate W. As shown in FIG. First, as shown in (a), the film thickness measuring device 35 is put into a standby state. At this time, the inside of the chamber 101 is maintained at the same vacuum pressure as the containers 30a, 30b, 30c, 30d of the conveying unit 12 by the exhaust mechanism 112, and the film thickness measurement unit (measurement light output/ detection unit 142] and the laser rangefinder (laser emission/detection unit 143 for distance measurement) are turned on. Subsequently, as shown in (b), the stage 102 is raised to match the surface of the reference member 120 to the measurement surface, and as shown in (c), the measurement is made from the light source of the light source unit 145 . The reference member 120 is irradiated with light for film thickness measurement through the light output/detection unit 142 to perform reference measurement. At this time, by irradiating the reference member 120 with light from the light source of the light source unit 145 , the output light amount of the light source is measured, and it is checked whether the light source output is within the standard. When the output value is lower than the reference, since deterioration of the light source is considered, for example, an alarm is generated from the film thickness measuring device 35, the measurement is stopped, and the user is prompted to replace the light source (lamp). In addition, by this reference measurement, data serving as a reference for film thickness measurement can be acquired. Subsequently, as shown in (d), the stage 102 is lowered to the substrate loading position, the substrate W is loaded into the chamber 101, and is placed on the stage [refer to (e) and (f)). ].

Next, the distance in the Z direction of the measurement point of the substrate W is measured. 4 is a view for explaining a procedure for measuring the distance in the Z direction of the measurement point of the substrate (W).

First, as shown in (a), the reference position of the substrate W is measured. For example, when the substrate W is a wafer, notch alignment is performed. Subsequently, as shown in (b), the height position of the surface of the substrate W is moved to the measurement surface. The alignment at this time is performed at a specific position of the substrate W. Subsequently, as shown in (c), by the laser emission/detection unit 143 for distance measurement, the distance to the substrate W with respect to the plurality of film thickness measurement positions on the substrate W, that is, the measurement light The distance (Z-direction distance) between the light receiving sensor of the emission/detection unit 142 and the irradiation point on the substrate W is measured. At this time, the R direction position (R coordinate) of the laser emission/detection unit 143 for distance measurement by the drive motor 144 and the Θ direction position (Θ coordinate) of the substrate W by the rotation mechanism 104 are adjusted Thus, a plurality of film thickness measurement positions are sequentially irradiated with the laser for distance measurement.

Next, the film thickness measurement is actually performed at the film thickness measurement position where the distance in the Z direction is measured. 5 is a view for explaining a procedure for actually performing film thickness measurement at the film thickness measurement position where the distance in the Z direction is measured.

First, as shown in (a), the position of the measurement light output/detection unit 142 is adjusted by the drive motor 144 , and the angle of the substrate W is adjusted by the rotation mechanism 104 . Thereby, the R-Θ coordinate of the irradiation point at which light is irradiated from the measurement light emitting/detection unit 142 to the substrate W is adjusted so that it becomes any one of the plurality of film thickness measurement positions. Subsequently, as shown in (b), the distance (Z direction distance) between the light receiving sensor and the irradiation point (film thickness measurement position) is measured by the laser rangefinder (laser emission/detection unit 143 for distance measurement) Based on the result, the Z-direction distance is corrected by the lifting mechanism 106 . Subsequently, as shown in (c), light is irradiated onto the substrate from the light output section of the film thickness measuring section (measurement light output/detection unit 142), and the light is emitted from the irradiation point (film thickness measurement position). The reflected light is detected by a light receiving sensor, and the film thickness of the film at the film thickness measurement position is measured. Then, as shown in (d), in the same manner, the R-Θ coordinates of the irradiation points of the light from the measurement light emitting/detecting unit 142 to the substrate W are sequentially transferred to a plurality of different film thickness measurement positions. It adjusts, correct|amends the Z direction distance of a film thickness measurement position sequentially, and performs the film thickness measurement of the other some film thickness measurement position. When the film thickness measurement at all measurement points is finished, as shown in (e), the substrate W is unloaded.

The film forming system 1 is used for forming a laminated film by forming a plurality of very thin films, for example, for forming a laminated film used in MRAM. At this time, it is a very thin film|membrane whose film thickness of one layer is 10 nm or less, and further 1 nm or less. The film thickness measuring device 35 measures the film thickness of a very thin film formed by the film forming system 1 in-situ, and measures the film thickness by spectral interferometry using broad light of a short wavelength, High-precision film thickness measurement is possible.

However, in the film thickness measurement of a very thin film of 10 nm or less, further 1 nm or less, which is required for in-situ film thickness measurement, the height direction (Z direction) due to the bending of the substrate W as the measurement object. ) was found to affect the film thickness measurement precision. That is, when displacement in the Z direction occurred in the substrate W, it was found that the distance between the light receiving sensor and the film thickness measurement position on the substrate W was changed, thereby causing an error in the measured film thickness.

Fig. 6 is a diagram showing the relationship between the relative working distance (the amount of change in the distance between the light receiving sensor and the measurement object) and the measured film thickness value. From this figure, it can be seen that the measurement film thickness depends on the distance between the light receiving sensor and the measurement object, and when this distance is changed by 1 mm, an error of 0.2 nm occurs in the measurement film thickness. Therefore, when a film thickness measurement of 10 nm or less, further 1 nm or less is required, such an error may become unacceptable.

Therefore, in this example, the distance (Z direction distance) between the light receiving sensor and the film thickness measurement position of the substrate W is measured with high precision by a laser rangefinder (laser emission/detection unit 143 for distance measurement), The distance can be corrected by the lifting mechanism 106 . Thereby, even if Z-direction displacement such as warpage occurs in the substrate W, the accuracy of the film thickness measurement does not decrease, and the thickness measurement required for in-situ film thickness measurement is 10 nm or less, and even 1 nm or less. The film thickness of a thin film can be measured with high precision.

Further, in this example, by moving the measurement light emitting/detecting unit 142 in the R direction and rotating the substrate W in the Θ direction, the light for film thickness measurement is rapidly transferred to an arbitrary position on the substrate W. can be investigated Thereby, rapid film thickness measurement corresponding to in-situ film thickness measurement can be realized.

In an actual wafer used as the substrate W, as shown in FIG. 7, a test pad capable of measuring a film thickness is formed at an arbitrary position. Since a device is not formed on the test pad, the film thickness can be easily measured. Even in the case of measuring the film thickness with the test pad at a plurality of points, as described above, since the light irradiation position can be changed quickly, the film thickness measurement can be completed in a short time. In addition, the coordinates of the position of the test pad are stored in advance according to the type of wafer, and based on the stored information, as described above, the R-direction movement of the light emitting/optical assembly 140 and the stage 102 The light irradiation position can be set quickly by rotation (movement in the Θ direction).

In the case of measuring the film thickness by the optical interference method, the film thickness of the formed film is changed by the optical constant of the underlying substrate. For this reason, although the film thickness measurement by the test pad is performed as mentioned above, if the optical constant of the underlying material is known, the film thickness of the film by an actual pattern can be measured, and the film thickness measurement can be performed more accurately. In an actual pattern, many films are laminated, but measurements can be made with high precision up to about 10 layers.

In addition, since the reference member 120 is provided on the stage 102 and the height is adjusted with a laser rangefinder (laser emission/detection unit 143 for distance measurement) to perform reference measurement, there is no need to use a reference substrate. none. This also is advantageous for in-situ film thickness measurement.

Patent Documents 2 and 3 describe a technique for measuring a film thickness in-situ by connecting a film thickness measuring module in a film forming system having a plurality of processing modules. However, these techniques measure the film thickness using a laser, and measurement of the film thickness of a very thin film such as 10 nm or less such as MRAM, and even 1 nm or less is not assumed. Therefore, conventionally, the film thickness measurement of the MRAM film had to be performed after the substrate after the deposition of the laminate film was taken out from the film formation system.

On the other hand, in the film thickness measuring apparatus of this example, the film thickness measurement of a very thin film, such as 10 nm or less, further 1 nm or less, can be performed in-situ in the film forming system.

Next, another example of a film thickness measuring apparatus is demonstrated.

Fig. 8 is a cross-sectional view showing a main part of another example of the film thickness measuring device.

In the film thickness measurement apparatus 35a of this example, the mechanism which performs position adjustment in the horizontal direction (R direction) of the position which irradiates the light for film thickness measurement on the board|substrate W is the film thickness measurement apparatus 35 of FIG. different from In addition, in FIG. 8, the same code|symbol is attached|subjected to the same thing as FIG. 2, and description is abbreviate|omitted.

As shown in FIG. 8 , the film thickness measuring device 35a has a horizontal drive mechanism 180 capable of moving the stage 102 in the horizontal direction, and the stage 102 moves in the horizontal direction ( R direction) is also possible. In this example, the rotating mechanism and the lifting mechanism are accommodated in the case 185 , and the stage 102 is horizontally movable together with the case 185 . The horizontal driving mechanism 180 includes a guide rail 181 for guiding the stage 102 in a horizontal direction through a slider (not shown) together with the case 185 , and a guide rail 181 for guiding the stage 102 together with the case 185 horizontally. It has a drive part 182 for driving in a direction. In this example, the drive part 182 is comprised by the ball screw mechanism which has the rotation motor 183. As shown in FIG. That is, in this example, the driving unit 182 has a ball screw (not shown) extending horizontally in parallel with the guide rail 181 and screwed to the case 185 . Then, the stage 102 is horizontally moved by rotating the ball screw with the rotary motor 183 and horizontally moving the case 185 along the guide rail 181 through the slider. Between the chamber 101 and the case 185, the inside of the chamber 101 is shielded from the atmospheric atmosphere by a shielding mechanism (not shown), such as a bellows.

In addition, the horizontal drive mechanism 180 is not limited to using a ball screw mechanism as long as the stage 102 can be moved horizontally. For example, the case 185 may be self-propelled along the guide rail 181 by a motor provided on a slider or the like.

The light emitting/receiving assembly 140 is fixed to the upper wall of the chamber 101 unlike the film thickness measuring device 35 of the above example.

In the film thickness measuring device 35a configured as described above, instead of moving the light emitting/receiving assembly 140 in the horizontal direction (R direction) as in the film thickness measuring device 35 , the horizontal drive mechanism 180 ) This moves the stage 120 in the horizontal direction (R direction) to adjust the horizontal direction (R direction) of the light irradiation position. Therefore, similarly to the film thickness measurement apparatus 35 of the above example, it is possible to quickly irradiate the light for film thickness measurement to an arbitrary position on the substrate W.

In addition, in this example, the light emitting/receiving assembly 140 is fixed so that the stage 102 can be moved in the horizontal direction (R direction). However, both the stage 102 and the light emitting and receiving assembly 140 are fixed. All of them may be made movable in the horizontal direction (R direction).

Next, another example of the film thickness measuring apparatus will be described.

Fig. 9 is a cross-sectional view showing a main part of another example of the film thickness measuring apparatus.

In the film thickness measurement apparatus 35b of this example, the mechanism which performs position adjustment of the position which irradiates the light for film thickness measurement on the board|substrate W differs from the film thickness measurement apparatus 35 of FIG. In addition, in FIG. 9, the same code|symbol is attached|subjected to the thing similar to FIG. 2, and description is abbreviate|omitted.

As shown in FIG. 9 , the film thickness measuring device 35b has a stage moving mechanism 190 capable of moving the stage 102 arbitrarily in a horizontal plane. In this example, the stage moving mechanism 190 includes a drive unit 191 and a multi-joint arm unit 192 . The articulated arm part 192 has a structure in which a plurality of arms are connected by a rotatable connection part, and the stage 102 is supported on the upper end thereof, so that the stage 102 can be moved to an arbitrary position on a horizontal plane. have. The driving unit 191 drives the articulated arm unit 192 .

The driving unit 191 is attached to the lifting plate 201 , and a lifting mechanism 202 is connected to the lifting plate 201 . The lifting mechanism 202 is constituted by, for example, a piezoelectric actuator, and the height position of the stage 102 can be finely adjusted via the lifting plate 201 and the stage moving mechanism 190 . Between the bottom wall of the chamber 101 and the lifting plate 201 , a telescopic bellows 203 is airtightly provided so as to surround the driving unit 191 .

In addition, the stage moving mechanism 190 may move the stage 102 in a horizontal plane so that the light emitted from the light output unit of the light output/reception assembly 140 is irradiated to an arbitrary position on the substrate W, Others, such as an XY stage, may be sufficient.

The light emitting/receiving assembly 140 is fixed to the upper wall of the chamber 101 unlike the film thickness measuring device 35 of the above example.

In the film thickness measuring apparatus 35b comprised as mentioned above, the stage moving mechanism 190 can move the stage 102 arbitrarily in a horizontal plane. For this reason, by the stage moving mechanism 190, the light for film thickness measurement can be irradiated to arbitrary positions on the board|substrate W quickly.

Also in this example, the light emitting/receiving assembly 140 may be movable in the horizontal direction (R direction).

<Another embodiment of the film-forming system>

10 is a cross-sectional view showing an embodiment in which the film thickness measuring device 35' is provided in the portion adjacent to the processing module PM1 of the transfer module TM1. As shown in FIG. 10 , the conveying module TM1 includes a container 30a , a conveying mechanism 31a , and an exhaust mechanism 61 .

The conveyance mechanism 31a includes a drive mechanism 51 , a base portion 52 , a rotation/contraction portion 53 , and a substrate support arm 54 . The drive mechanism 51 is provided under the container 30a and is configured to rotate the drive shaft 51a. The base part 52 is fixed to the center of the bottom part in the container 30a, and the drive shaft 51a is penetrated. The rotation/contraction unit 53 has a multi-joint structure that can be rotated and contracted by the drive mechanism 51 . The board|substrate support arm 54 supports and conveys the board|substrate W, and delivers the board|substrate W.

A film thickness measuring device 35' is provided in a portion adjacent to the processing module PM1 in the container 30a. The structure of the film thickness measuring apparatus 35' is basically the same as that of the film thickness measuring apparatus 35, and the same reference numerals as those of the film thickness measuring apparatus 35 are given, and description thereof is omitted.

Thus, by providing the film thickness measuring apparatus 35' in the conveyance module TM1, it is not necessary to provide the chamber for film thickness measurement separately, and space saving can be achieved. In addition, the film thickness can be measured immediately after the film forming process is performed by the adjacent processing module PM1, and the throughput can be increased. Moreover, even if it provides the film thickness measuring apparatus 35' in the conveyance modules TM2 - TM4, the same effect can be acquired.

In addition, two or more of the transfer modules TM1 to TM4, for example, as shown in FIG. 11 , the film thickness measuring device 35' may be provided in the entire transfer module TM1 to TM4, thereby more You can increase your throughput. In addition, in the case of providing a plurality of film thickness measuring apparatuses 35' in this way, as shown in FIG. 12 , each film thickness measuring apparatus ( 35') to the measurement light output/detection unit 142 (multichannelization), which is efficient.

13 : is sectional drawing which showed embodiment which provided the film thickness measuring apparatus 35" in the transmission part 41 between the conveyance module TM1 and the conveyance module TM2. The structure of the film thickness measuring apparatus 35" is Since it is basically the same as the film thickness measuring apparatus 35, the same code|symbol is attached|subjected to the same thing, and description is abbreviate|omitted.

In this way, by providing the film thickness measuring device 35" in the transfer unit 41 between the transfer module TM1 and the transfer module TM2, it is not necessary to separately provide a chamber for measuring the film thickness, thereby saving space. In addition, the film thickness can be measured in the process of transporting the substrate W, and the throughput can be increased. In addition, the film thickness measuring device ( 35"), the same effect can be obtained. In addition, also in the case of this example, it is possible to provide the film thickness measuring device 35" in two or more of the transmission parts 41, 42, 43, for example, the whole transmission part 41, 42, 43, Accordingly, The throughput can be further increased. Similarly, efficiency can be improved by using the common light source unit 145 for the measurement light output/detection unit 142 of each film thickness measuring device 35".

Incidentally, as the film thickness measuring apparatus 35' and the film thickness measuring apparatus 35", those having the same configuration as that of the film thickness measuring apparatus 35 were used, but these were used as the film thickness measuring apparatus 35a or the film thickness measuring apparatus 35b. ) and may have the same configuration as

<Sequence of film formation and film thickness measurement of a plurality of films>

Next, in the film-forming system 1, the sequence at the time of continuously forming a film into a film, and measuring the film thickness of each film|membrane is demonstrated.

Fig. 14 is a flowchart showing the sequence at this time, and Fig. 15 is a cross-sectional view for explaining the main steps of this sequence.

First, as a substrate W, for example _{, a wafer having a SiO 2} film 302 formed on a Si substrate 301 is prepared (Fig. 15(a)), and loaded into a processing module for forming the first film (step ST1). ).

_{Then, a predetermined film is formed on the SiO 2} film 302 by the processing module (step ST2, FIG. 15B). In Fig. 15B, a film A303 is formed first, and the film A303 may be a single film or a multilayer film.

Subsequently, the substrate W after film formation is conveyed to the film thickness measuring apparatus 35 (step ST3), and the film thickness of the formed film (film A303) is measured (step ST4, Fig. 15(c)). ]. The film thickness may be measured by the film thickness measuring devices 35a, 35b, 35', 35".

Then, the measurement result of the film thickness is acquired (step ST5). The measurement result of the film thickness is transmitted to the control part 4 and acquired by the control part 4 . Then, the measurement result is fed back to tune the film thickness measurement recipe (step ST6, Fig. 15(d)). That is, the film thickness, optical constant, etc. when the formed film (film A303) is measured are fed back to the film thickness measurement recipe as parameters of the multilayer film to tune the film thickness measurement recipe.

Subsequently, the substrate W is loaded into the processing module for the next step (step ST7), the next film is formed on the substrate W (step ST2), and after the film formation, the substrate is transferred to the film thickness measuring device 35, (Step ST3), the film thickness of the next film is measured (Step ST4, Fig. 15(e)). In Fig. 15E, a film B304 is formed as the next film, and the film B may be a single film or a multilayer film. At the time of film thickness measurement of the next film (film B304), the film thickness measurement is performed according to the tuned film thickness measurement recipe. At this time, since the optical properties of the underlying film (film A303, SiO ₂ film 302, and Si substrate 301) are tuned, high film thickness measurement accuracy can be obtained.

The above film formation, film thickness measurement, and tuning are repeated, and the sequence ends when film formation and film thickness measurement are completed for all films.

When a plurality of films are continuously formed on a substrate by the sequence as described above, a change in the state of the underlying affects the film thickness measurement accuracy of the formed film. On the other hand, in this example, the film thickness measurement recipe is tuned by feeding back the measurement result of the film thickness measurement of the film formed previously, and the film thickness measurement of the next film|membrane is performed. For this reason, the optical constant of an underlying film can be grasped|ascertained at the time of film-forming of the next film|membrane, and film thickness measurement can be performed with high precision. When the optical constant of the underlying film is known, it is possible to perform highly accurate film thickness measurement repeatedly up to about 10 layers. Therefore, when forming a multilayer film, the film thickness measurement of each film can be performed with high precision.

Further, when continuously forming a multilayer film by the film forming system 1, it is very efficient because the film thickness can be measured by the film thickness measuring device in-situ whenever a film is formed by the processing module.

In particular, by arranging the film thickness measuring device in the transport module, it is possible to perform very efficient and highly accurate film thickness measurement, which will be described below with reference to FIG. 16 . Here, for example, as the transport mechanism of the transport module TM1, the stage moving mechanism 190 of the film thickness measurement apparatus of FIG. 9 is used, thereby carrying out both the transport of the substrate W and the film thickness measurement. do. That is, the stage 102 is made to function also as a board|substrate support arm of a conveyance mechanism, and the articulated arm part 192 is made to function also as a rotation/contraction part of the articulated structure of a conveyance mechanism (FIG. 16(a)). Then, together with the light emitting/receiving assembly 140 , the film thickness measuring device 35b is constituted. When the substrate on which the underlying film has been formed is transferred from the transfer module TM1 to the processing module PM1 to form the next film, the substrate W is transferred to the processing module PM1 as shown in FIG. 16B. During conveyance, the film thickness of the underlying film is measured by the film thickness measuring device 35b. At this time, the measurement result is fed back to tune the film thickness measurement recipe. After the formation of the next film in the processing module PM1 is finished, as shown in FIG. 16C , the substrate W on which the next film is formed is unloaded from the processing module PM1 to the stage moving mechanism 190 . During the process, the film thickness of the next film is measured by the film thickness measuring device 35b. In this case, since the optical properties of the underlying film are being tuned, high film thickness measurement accuracy can be obtained.

In addition, by providing such a film thickness measuring device 35b in all the transport modules TM1 to TM4, similarly to the film thickness measuring device 35' in Fig. 11, the film thickness measurement of the entire film can be performed more efficiently. can In this case, as shown in FIG. 12 , it is possible to achieve further efficiency improvement by using a common light source unit to multi-channel.

<Other applications>

As mentioned above, although embodiment was demonstrated, it should be considered that embodiment disclosed this time is an illustration and is not restrictive in every point. The above-described embodiment may be omitted, replaced, or changed in various forms without departing from the appended claims and the gist thereof.

For example, in the above embodiment, as the film formation system, the substrates are sequentially transferred and processed to a plurality of processing modules. However, the present invention is not limited thereto, and substrates may be transferred randomly to the plurality of processing modules. good.

In addition, although the example of forming a laminated|multilayer film used for MRAM into a film was mentioned as an example of a process, it is not limited to this. In addition, in order to adjust the distance between the light receiving sensor and the film thickness measurement position on the substrate, a lifting mechanism for raising and lowering the stage is used. good.

Claims (28)

A film forming system having a processing module for forming a film on a substrate, and a transfer module for transferring the substrate to the processing module, comprising: a film thickness measuring device for measuring a film thickness of a film formed on a substrate in-situ;
a stage for arranging the substrate on which the film is formed;
a measurement light output/detection unit having a light output unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving the reflected light reflected from the substrate;
a moving mechanism for moving an irradiation point of the light on the substrate;
a rangefinder for measuring a distance between the light receiving sensor and the irradiation point on the substrate;
A distance adjusting mechanism for adjusting a distance between the light receiving sensor and the irradiation point on the substrate
A film thickness measuring device comprising a. The film thickness measuring apparatus according to claim 1, further comprising a reference member provided on the stage and made of the same material as the base portion of the substrate and serving as a reference for the light source. The film thickness measuring apparatus according to claim 1 or 2, wherein the measurement light emitting/detecting unit irradiates a broad light having a wavelength of 800 nm or less. The film thickness measuring apparatus according to any one of claims 1 to 3, wherein the rangefinder is a laser rangefinder. 5. The laser rangefinder according to claim 4, wherein the laser rangefinder has a laser emission/detection unit for distance measurement having a laser emission unit for emitting a laser for distance measurement toward the stage, and a light receiving sensor for distance measurement for receiving reflected light of the laser, , wherein the measuring light emitting/detecting unit and the distance measuring laser emitting/detecting unit are integrally provided adjacent to each other. The moving mechanism according to any one of claims 1 to 5, wherein the moving mechanism comprises: a first moving unit for moving the measurement light emitting/detecting unit in a radial direction of the substrate; and a second moving unit for rotating the stage. A film thickness measuring device having a The film thickness according to any one of claims 1 to 5, wherein the moving mechanism has a first moving unit that moves the stage in a radial direction of the substrate and a second moving unit that rotates the stage. measuring device. The film thickness measuring apparatus according to claim 7, wherein the first moving part has a mechanism for moving a member supporting the stage along a rail provided horizontally. The film thickness measuring apparatus according to any one of claims 1 to 5, wherein the moving mechanism has a stage moving mechanism capable of arbitrarily moving the stage in a horizontal plane. The film thickness measuring apparatus according to any one of claims 1 to 9, wherein the film thickness of the film formed on the substrate is 10 nm or less. A film forming system having a processing module for forming a film on a substrate, and a transfer module for transporting the substrate to the processing module, comprising: a film thickness measuring method for measuring a film thickness of a film formed on a substrate in-situ by a film thickness measuring device ,
The film thickness measuring device,
a stage for arranging the substrate on which the film is formed;
a measurement light output/detection unit having a light output unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving the reflected light reflected from the substrate;
a moving mechanism for moving the irradiation point of the light on the substrate;
a rangefinder for measuring a distance between the light receiving sensor and the irradiation point on the substrate;
a distance adjusting mechanism for adjusting a distance between the light receiving sensor and the irradiation point on the substrate;
measuring a distance between the light-receiving sensor and a film thickness measurement position at which a film thickness is measured by irradiating light on the substrate by the distance meter;
Move the measurement light emitting/detection unit to the film thickness measurement position, and based on the distance measured by the step of measuring the distance, the light receiving sensor at the film thickness measurement position and the irradiation point on the substrate The process of adjusting the distance with
A step of irradiating light from the light output unit to the film thickness measurement position, detecting reflected light by the light receiving sensor, and measuring the film thickness
A film thickness measurement method comprising a. 12. The method of claim 11, wherein the film thickness measuring device further comprises a reference member provided on the stage and made of the same material as the base portion of the substrate, which serves as a reference for the light source,
and a step of performing reference measurement by irradiating the reference member with light from a light output section of the measurement light output/detection unit, which is performed prior to the step of measuring the distance. 13. The film thickness measuring method according to claim 11 or 12, wherein the step of measuring the film thickness is performed by irradiating broad light having a wavelength of 800 nm or less from the measurement light emitting/detecting unit. The film according to any one of claims 11 to 13, wherein the rangefinder is a laser rangefinder, and the step of measuring the distance is performed by irradiating a laser from the laser rangefinder to a film thickness measurement position of the substrate. How to measure thickness. 15. The method according to claim 14, wherein the laser rangefinder includes a laser emission/detection unit for distance measurement having a laser emission unit for emitting a laser for distance measurement toward the stage, and a light receiving sensor for distance measurement that receives reflected light of the laser. and the measuring light emitting/detecting unit and the distance measuring laser emitting/detecting unit are integrally provided adjacent to each other. 16. The method according to any one of claims 11 to 15, wherein the moving mechanism comprises: a first moving part for moving the measurement light emitting/detecting unit in a radial direction of the substrate; and a second moving part for rotating the stage. A method for measuring film thickness. The film thickness according to any one of claims 11 to 15, wherein the moving mechanism has a first moving unit that moves the stage in a radial direction of the substrate and a second moving unit that rotates the stage. How to measure. The film thickness measuring method according to claim 17, wherein the first moving part has a mechanism for moving a member supporting the stage along a rail provided horizontally. The film thickness measuring method according to any one of claims 11 to 15, wherein the moving mechanism has a stage moving mechanism capable of arbitrarily moving the stage in a horizontal plane. 20. The film thickness measuring method according to any one of claims 11 to 19, wherein the film thickness of the film formed on the substrate is 10 nm or less. a processing module for forming a film on the substrate;
a transfer module for transferring the substrate to the processing module;
A film thickness measuring device for in-situ measuring the film thickness of a film formed by the processing module
As a film-forming system comprising a,
The film thickness measuring device,
a stage for arranging the substrate on which the film is formed;
a measurement light output/detection unit having a light output unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving the reflected light reflected from the substrate;
a moving mechanism for moving the irradiation point of the light on the substrate;
a rangefinder for measuring a distance between the light receiving sensor and the irradiation point on the substrate;
and a distance adjusting mechanism for adjusting a distance between the light receiving sensor and the irradiation point on the substrate. The film forming system according to claim 21, wherein the film thickness measuring device further has a chamber connected to the transfer module and accommodating the stage therein. The film forming system according to claim 21, wherein the film thickness measuring device is provided in the transport module. The film forming system according to claim 21, wherein the processing module has a plurality of the transport modules connected thereto, the plurality of transport modules are connected to each other, and the film thickness measuring device is provided in a connecting portion of the transport module. The film forming system according to claim 21, wherein the film thickness measuring device is provided in the processing module. The light branched from a common light source according to any one of claims 21 to 25, comprising a plurality of the film thickness measuring devices, and to each of the measurement light emitting/detecting units of the plurality of the film thickness measuring devices. This is supplied with the deposition system. a plurality of processing modules forming a film on the substrate;
a transfer module for transferring the substrate to the processing module;
a film thickness measuring device for in-situ measuring the film thickness of the film formed by the processing module;
control
includes,
The film thickness measuring device,
a stage for arranging the substrate on which the film is formed;
a measurement light output/detection unit having a light output unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving the reflected light reflected from the substrate;
a moving mechanism for moving the irradiation point of the light on the substrate;
a rangefinder for measuring a distance between the light receiving sensor and the irradiation point on the substrate;
a distance adjusting mechanism for adjusting a distance between the light receiving sensor and the irradiation point on the substrate;
The control unit, after forming a first film on the substrate with one processing module, causes the film thickness measurement device to measure the film thickness of the first film, and based on the result of the film thickness measurement, a film thickness measurement recipe tuning, forming a second film with respect to the substrate on which the first film has been formed with another processing module, and causing the film thickness measurement device to measure the film thickness of the second film by the tuned film thickness measurement recipe film formation system. A film formation method in a film formation system comprising: a processing module for forming a film on a substrate; a transfer module for transporting a substrate to the processing module;
The film thickness measuring device,
a stage for arranging the substrate on which the film is formed;
a measurement light output/detection unit having a light output unit for emitting light for film thickness measurement toward the substrate on the stage and a light receiving sensor for receiving the reflected light reflected from the substrate;
a moving mechanism for moving the irradiation point of the light on the substrate;
a rangefinder for measuring a distance between the light receiving sensor and the irradiation point on the substrate;
and a distance adjusting mechanism for adjusting the distance between the light receiving sensor and the irradiation point on the substrate,
forming a first film on the substrate with one processing module;
measuring the film thickness of the first film with the film thickness measuring device;
tuning a film thickness measurement recipe based on a result of the film thickness measurement;
forming a second film on the substrate on which the first film is formed by another processing module;
performing film thickness measurement of the second film by the film thickness measurement recipe tuned by the film thickness measurement device
A film-forming method comprising a.

Images