KR20210111162A - Cleaning method and plasma processing apparatus - Google Patents

Abstract

An objective of the present invention is to be able to increase a cleaning efficiency of a plasma processing device. A cleaning method for cleaning an edge ring and a substrate support part in a plasma processing chamber comprising the substrate support part having a first arranging part for arranging the substrate and a second arranging part for arranging the edge ring, comprises: a process a) and a process b). In process a), the edge ring arranged on the substrate support is moved to a first position spaced apart from the substrate support part. In process b), power is supplied to the substrate support part while supplying a cleaning gas to a plasma processing chamber to generate a local plasma in a gap between the edge ring and the substrate support part in the first position, thereby cleaning the edge ring and the substrate support part.

Description

CLEANING METHOD AND PLASMA PROCESSING APPARATUS

The following disclosure relates to a cleaning method and a plasma processing apparatus.

In the plasma processing apparatus, a consumable part called a focus ring (hereinafter also referred to as an edge ring) is used. The focus ring is configured as, for example, a two-part focus ring comprising an inner focus ring and an outer focus ring. Since deposits adhere between the inner focus ring and the outer focus ring by substrate processing, a technique for removing such deposits has been proposed (Patent Document 1).

Also, a method of replacing the focus ring by a conveying device without opening the processing chamber to the atmosphere has been proposed (Patent Document 2). According to this method, when the focus ring is unloaded, in order to prevent the deposits from being rolled up in the processing chamber, cleaning is performed in which the deposits are removed by plasma of a processing gas or the like. Further, it is proposed to clean the surface on which the focus ring is disposed after the focus ring is taken out.

[Patent Document 1] Japanese Patent Laid-Open No. 2012-146742 [Patent Document 2] Japanese Patent Laid-Open No. 2018-10992

The present disclosure provides a technique capable of increasing the cleaning efficiency of a plasma processing apparatus.

A plasma processing apparatus according to an aspect of the present disclosure includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, and an edge ring disposed on the substrate support to surround a substrate on the substrate support, the edge ring a lifting device for raising and lowering the plasma processing chamber; a gas supply unit configured to supply a cleaning gas to the plasma processing chamber; maintaining the substrate support in a first position spaced apart from the substrate support; b) supplying power to the substrate support while supplying the cleaning gas to the plasma processing chamber, so that the edge ring and the substrate support in the first positions and generating a local plasma in the gap therebetween, thereby cleaning the edge ring and the substrate support.

According to the present disclosure, it is possible to increase the cleaning efficiency of the plasma processing apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows an example of the structure of the conveyance system which concerns on embodiment.
Fig. 2 is a diagram showing an example of a configuration of a plasma processing system according to an embodiment;
Fig. 3 is a flowchart showing an example of the flow of the cleaning method according to the embodiment;
Fig. 4 is a view for explaining the positional relationship between the edge ring and the substrate support when the cleaning method according to the embodiment is executed;
5A is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 1;
Fig. 5B is a view for explaining the positional relationship of each part when cleaning is performed using the plasma processing apparatus according to Modification Example 1;
6A is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 2;
6B is a diagram for explaining the positional relationship of each part when cleaning is performed using the plasma processing apparatus according to Modification Example 2;
7A is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 3;
Fig. 7B is a view for explaining the positional relationship of each part when cleaning is performed using the plasma processing apparatus according to Modification Example 3;
8 is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 4;
9 is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 5;
Fig. 10 is a diagram showing an example of the configuration of a plasma processing apparatus according to Modification Example 6;

EMBODIMENT OF THE INVENTION Below, embodiment disclosed is described in detail based on drawing. In addition, this embodiment is not restrictive. In addition, each embodiment can be combined suitably in the range which does not contradict a process content. In addition, in each figure, the same code|symbol is attached|subjected about the same or corresponding part.

As described above, a method of removing deposits deposited in the plasma processing apparatus by cleaning using plasma is known. However, depending on the conditions of the plasma treatment, deposits adhere to even minute gaps between components disposed in the chamber. For example, deposits may also adhere to the gap between the edge ring and the mounting table, to a recess formed on the mounting table, and the like. It takes a long time for cleaning to remove deposits adhering to minute gaps. For example, the cleaning time performed after the etching process for processing a fine deep hole is equivalent to the etching processing time when it is long, or about a third of the etching processing time even if it is short. For this reason, the throughput of plasma processing falls by cleaning.

Also, if cleaning is performed while the surface of the mounting table is exposed to the plasma space, the mounting table surface is damaged. For this reason, for example, Patent Document 2 proposes cleaning by placing a dummy wafer on an electrostatic chuck. However, since it takes time to carry in the dummy wafer by the worker, the throughput also decreases.

For this reason, a method capable of efficiently cleaning a plasma processing apparatus is desired.

(Embodiment)

1 : is a figure which shows an example of the structure of the conveyance system 1000 which concerns on embodiment. 1 is a top view of a conveyance system 1000 . The transfer system 1000 includes a storage container FP, an atmospheric transfer chamber ATM, a load lock module LLM, a vacuum transfer chamber VTM, and a processing device PM. In the standby transfer chamber ATM, the first transfer device TM1 is disposed. In vacuum transfer chamber VTM, 2nd transfer apparatus TM2 is arrange|positioned. Fig. 1 shows three storage containers FP1 to FP3, six processing units PM1 to PM6, and two load-lock modules LLM1 to LLM2. However, the number of the respective parts is not limited to the illustrated number, and may be at least larger than the illustrated number. In addition, when it is not necessary to distinguish each part in particular, a storage container, a processing apparatus, and a load-lock module are collectively denoted as FP, PM, and LLM, respectively.

The 1st conveyance apparatus TM1 carries out the board|substrate W or the edge ring ER accommodated in the storage container FP from the storage container FP, and carries it into the load-lock module LLM. The 2nd conveyance apparatus TM2 carries out the board|substrate W or the edge ring ER from the load-lock module LLM, and carries it into the processing apparatus PM where plasma processing is performed. In addition, after completion of the plasma processing, the second transfer device TM2 transports the substrate W or the edge ring ER from the processing device PM, and the processing device PM is executed next, or It is returned to the load lock module (LLM). The substrate W or the edge ring ER loaded from the vacuum transfer chamber VTM into the load lock module LLM is transferred from the load lock module LLM to the atmospheric transfer chamber ATM by the first transfer device TM1. ) and returned to the storage container FP again. In addition, although not shown in FIG. 1, you may connect the storage container FP which accommodated the edge ring ER directly to the vacuum transfer chamber VTM. In this case, when it comes to replacement|exchange time of the edge ring ER, 2nd conveyance apparatus TM2 carries out the used edge ring ER of exchange object from the processing apparatus PM, and accommodates it in the storage container FP. do. Moreover, 2nd conveyance apparatus TM2 takes out unused edge ring ER from storage container FP, and conveys it to processing apparatus PM.

In addition, the atmospheric transfer chamber ATM is maintained in an atmospheric atmosphere. The load lock module LLM includes an exhaust device, a plurality of openings connected to each of the atmospheric transfer chamber ATM and the vacuum transfer chamber VTM, and a gate valve that covers each opening so as to be able to open and close. The load lock module LLM is decompressed into a reduced pressure atmosphere by an exhaust device before communicating with the vacuum transfer chamber VTM. The vacuum transfer chamber VTM and the processing device PM are provided with an exhaust device similarly. Moreover, between the vacuum transfer chamber VTM and each processing apparatus PM, the gate valve which covers the opening part and the said opening part so that opening and closing is possible is provided.

By having such a configuration, the transfer system 1000 transfers the substrate W and the edge ring ER between the processing apparatus PM and the storage container FP in which plasma processing is performed without human hands. can do. The detail of the structure of the conveyance system 1000 is not specifically limited, For example, it can be set as the structure described in the said patent document 2.

(Embodiment)

2 is a diagram showing an example of the configuration of the plasma processing system 1 according to the embodiment. In one embodiment, the plasma processing system 1 includes a plasma processing apparatus 1a and a control unit 1b. The plasma processing apparatus 1a corresponds to the processing apparatus PM shown in FIG. 1 . All of the processing apparatuses PM1 to PM6 shown in FIG. 1 may be configured in the same manner as the plasma processing apparatus 1a of FIG. 2 , and a part of the processing apparatuses PM1 to PM6 may be configured with the plasma processing apparatus 1a of FIG. You may be comprised in the same way. In addition, the control part 1b may be provided one by one in each processing apparatus PM. In another example, a common control unit may be provided in all six processing apparatuses PM, and it is good also as what is collectively controlled by the some processing apparatus PM. Moreover, you may provide the upper control part which integrally controls the some control part 1b provided in one processing apparatus PM.

The plasma processing apparatus 1a includes a chamber 10 , a gas supply unit 20 , a radio frequency (RF) power supply (RF power source) 30 , an exhaust system 40 , and a lifting device 50 . . In addition, the plasma processing apparatus 1a includes a substrate support (mounting table) 11 and an upper electrode shower head 12 . The substrate support 11 is disposed in a lower region of the plasma processing space 10s in the chamber 10 . The upper electrode shower head 12 is disposed above the substrate support 11 , and may function as a part of a ceiling of the chamber 10 .

The substrate support unit 11 is configured to support the substrate W in the plasma processing space 10s. The substrate support part 11 has a 1st arranging part and a 2nd arranging part. In one embodiment, the substrate support 11 includes a lower electrode 111 , an electrostatic chuck 112 , and an edge ring 113 (corresponding to the edge ring ER in FIG. 1 ). The electrostatic chuck 112 is disposed on the lower electrode 111 and is configured to support the substrate W on the upper surface of the electrostatic chuck 112 . An electrode 112a (a first electrode, see FIG. 4 ) is disposed on the electrostatic chuck 112 . The edge ring 113 is disposed so as to surround the substrate W on the upper surface of the peripheral edge portion of the lower electrode 111 . Further, although not illustrated, in one embodiment, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 112 and the substrate W to a target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant and a heat transfer gas flows through the flow path.

The upper surface of the substrate support 11 is divided into a first mounting surface 11a on which the substrate W is disposed and a second mounting surface 11b on which the edge ring 113 is disposed. The 1st arrangement surface 11a is located in the center of the board|substrate support part 11, and is comprised as a circular surface slightly smaller in diameter than the board|substrate W. As shown in FIG. The second placement surface 11b surrounds the outer periphery of the first placement surface 11a and is located below the first placement surface 11a, that is, on the bottom surface side of the chamber 10 . For example, the upper surface of the first placement unit corresponds to the first placement surface 11a, and the upper surface of the second placement portion corresponds to the second placement surface 11b. That is, the first arrangement unit arranges the substrate W, and the second arrangement unit arranges the edge ring 113 .

The upper electrode shower head 12 is configured to supply one or more processing gases from the gas supply unit 20 to the plasma processing space 10s. In one embodiment, the upper electrode shower head 12 has a gas inlet 12a, a gas diffusion chamber 12b, and a plurality of gas outlets 12c. The gas inlet 12a is in fluid communication with the gas supply unit 20 and the gas diffusion chamber 12b. The plurality of gas outlets 12c are in fluid communication with the gas diffusion chamber 12b and the plasma processing space 10s. In one embodiment, the upper electrode shower head 12 directs one or more process gases from a gas inlet 12a to a plasma processing space 10s through a gas diffusion chamber 12b and a plurality of gas outlets 12c. configured to supply

The gas supply unit 20 may include one or more gas sources 21 and one or more flow rate controllers 22 . In one embodiment, the gas supply unit 20 supplies one or more process gases from a corresponding gas source 21 to the gas inlet 12a through a respective flow controller 22 , respectively. is composed Each flow controller 22 may include, for example, a mass flow controller or a pressure control type flow controller. In addition, the gas supply unit 20 may include one or more flow rate modulation devices for modulating or pulsing the flow rates of one or more process gases.

The RF power supply unit 30 transmits RF power, for example, one or more RF signals, to the lower electrode 111 , the upper electrode shower head 12 , or the lower electrode 111 and the upper electrode shower head 12 . configured to feed one or more electrodes, such as both. In the example of FIG. 2 , the RF power supply unit 30 shows a configuration for supplying an RF signal to the lower electrode 111 . Thereby, plasma is generated from one or more processing gases supplied to the plasma processing space 10s. In one embodiment, the RF power supply unit 30 includes two RF generators 31a and 31b and two matching circuits 32a and 32b. In addition to the matching circuits 32a and 32b, a filter may be disposed.

In one embodiment, the RF power supply unit 30 is configured to supply the first RF signal from the RF generation unit 31a to the lower electrode 111 through the matching circuit 32a. For example, the first RF signal may have a frequency within the range of 27 MHz to 100 MHz.

Further, in one embodiment, the RF power supply unit 30 is configured to supply the second RF signal from the RF generation unit 31b to the lower electrode 111 through the matching circuit 32b. For example, the second RF signal may have a frequency within the range of 200 kHz to 13.56 MHz.

During plasma processing of the substrate W, for example, the RF generator 31a may apply a relatively high frequency, for example, 60 MHz, high-frequency power for plasma generation to the lower electrode 111 . On the other hand, the RF generator 31b may apply, to the lower electrode 111 , a relatively low frequency, for example, 2 MHz, high-frequency power for drawing ions.

Instead of the RF generator 31a, a DC (Direct Current) pulse generator may be used. In addition, in the example of FIG. 2 , the RF signal (or DC pulse) is supplied to the lower electrode 111 , but instead of the lower electrode 111 , an electrode (hereinafter, It is good also as a structure supplied to the 1st electrode). Such a configuration will be described later as a modified example. Also, a DC voltage may be applied to the upper electrode shower head 12 .

The exhaust system 40 may be connected to, for example, an exhaust port 10e formed at the bottom of the chamber 10 . The exhaust system 40 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbo molecular pump, a roughing pump, or a combination thereof.

An opening 13 having a gate valve G1 that can be opened and closed is formed in the sidewall of the chamber 10 . The opening 13 communicates with, for example, the vacuum transfer chamber VTM shown in FIG. 1 . The space in the vacuum transfer chamber VTM and the plasma processing space 10s in the chamber 10 are blocked by the gate valve G1. The substrate W and the edge ring 113 are transferred between the vacuum transfer chamber VTM and the chamber 10 through the opening 13 by the second transfer device TM2 included in the transfer system 1000 described above. is returned from

The lifting device 50 includes a first lifter pin 51a, a first actuator 52a, a second lifter pin 51b, and a second actuator 52b. The first lifter pin 51a is disposed in the first through hole 11c. The first through hole 11c extends in the vertical direction in the substrate support 11 and is opened on the first mounting surface 11a. The first lifter pin 51a moves in the vertical direction by the first actuator 52a. The substrate W placed on the first placement surface 11a is lifted from the first placement surface 11a as the first lifter pin 51a rises. Gripping parts, such as an arm with which 2nd conveyance apparatus TM2 is equipped, enter into chamber 10 through gate valve G1, and board|substrate W lifted by 1st lifter pin 51a. ) is received and carried out of the chamber 10 . When carrying in the board|substrate W into the chamber 10, each part operates in the reverse order to the time of carrying out. In addition, although one 1st lifter pin 51a and the 1st through-hole 11c are shown in FIG. 2, the number of the 1st lifter pin 51a and the 1st through-hole 11c is not specifically limited. What is necessary is just to provide the 1st lifter pin 51a and the 1st through-hole 11c by the number which stabilizes the board|substrate W at the time of being lifted.

The second lifter pin 51b is disposed in the second through hole 11d. In one embodiment, the 2nd through-hole 11d extends in the up-down direction in the inside of the board|substrate support part 11, and is opened in the 2nd mounting surface 11b. The second lifter pin 51b moves in the vertical direction by the second actuator 52b. Moreover, you may have the function of moving only a few millimeters in a horizontal plane. In addition, when the deposition amount of the gap between the edge ring and the substrate support portion is not uniform, the edge ring may be eccentric with respect to the substrate support portion 11 so as to generate plasma preferentially in a location where the deposition amount is large. The edge ring 113 disposed on the second placement surface 11b is lifted from the second placement surface 11b as the second lifter pin 51b rises. Like the board|substrate W, the edge ring 113 can be carried out from the chamber 10 by 2nd conveyance apparatus TM2, and can also be carried in in the chamber 10. The number of the second lifter pins 51b and the second through holes 11d is not particularly limited, and a stable number of the edge rings 113 when lifted may be provided.

In the example of Fig. 2, the first and second lifter pins 51a, 51b are raised and lowered by the first and second actuators 52a, 52b, but the first and second lifter pins 51a and 51b ) for elevating the mechanism is not particularly limited. In addition, one common lifting mechanism may be provided for the plurality of first lifter pins 51a, and one common lifting mechanism may be provided for the plurality of second lifter pins 51b similarly. Further, a lifting mechanism may be provided for each lifter pin.

In one embodiment, the control unit 1b processes computer-executable instructions for causing the plasma processing apparatus 1a to execute various processes described in the present disclosure. The control unit 1b may be configured to control each element of the plasma processing apparatus 1a to execute various processes described herein. In one embodiment, a part or all of the control unit 1b may be included in the plasma processing apparatus 1a. The control unit 1b may include, for example, the computer 61 . The computer 61 may include, for example, a processing unit (CPU: Central Processing Unit) 611 , a storage unit 612 , and a communication interface 613 . The processing unit 611 may be configured to perform various control operations based on the program stored in the storage unit 612 . The storage unit 612 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 613 may communicate with the plasma processing apparatus 1a via a communication line such as a LAN (Local Area Network). In addition, you may comprise the control part 1b as a processing part (CPU etc.) which integrally controls the some processing apparatus PM1 - PM6 with which the conveyance system 1000 shown in FIG. 1 is equipped. In addition, it is good also as the control part 1b controlling the operation|movement of the whole conveyance system 1000. As shown in FIG. In addition, another control device may be provided as a host device of the control unit 1b which controls each processing device PM to control each part integrally. For example, the conveyance path and conveyance timing of the board|substrate W and the edge ring (ER) 113 by 1st conveyance apparatus TM1 and 2nd conveyance apparatus TM2 are controlled by the control part 1b or its upper-level apparatus. good to do

(Example of flow of cleaning process)

3 is a flowchart showing an example of the flow of the cleaning method according to the embodiment. Each process shown in FIG. 3 is executed under the control of the control unit 1b, for example, based on a recipe stored in the storage unit 612 .

First, the control unit 1b determines whether or not the timing for performing cleaning has arrived (step S31). When it is determined that it has not arrived (step S31, No), the control unit 1b repeats step S31. When it is determined that it has arrived (step S31, Yes), the control unit 1b is configured to move the edge ring 113 on the substrate support 11 to a first position spaced from the substrate support 11 to the plasma processing apparatus ( 1a) and each part of the conveyance system 1000 is controlled (step S32).

The first position refers to a position where the distance between the edge ring 113 and the second placement surface 11b is from several millimeters to about 20 millimeters, preferably from about 2 millimeters to about 10 millimeters. In one embodiment, the distance of the gap between the edge ring 113 in the first position and the substrate support 11 is in the range of 1 millimeter to 20 millimeters.

When the edge ring 113 is disposed at the first position, next, the control unit 1b generates a local plasma between the edge ring 113 and the substrate support 11 (step S33).

First, the control part 1b supplies the gas for cleaning into the chamber 10 to the gas supply part 20, maintaining the edge ring 113 in a 1st position. The supplied gas is a gas suitable for a cleaning process by plasma processing, ie, removal of deposits adhering to the chamber 10 . The supplied gas may be, for example, _{a gas containing any one of oxygen (O 2} ), fluorine (F), nitrogen (N ₂ ), and hydrogen (H). The supplied gas may be, for example, NH ₃ , NF ₃ , CF ₂ , or the like. Accordingly, the cleaning gas includes a gas selected from the group consisting of _{oxygen-containing gas, NH 3} gas, NF ₃ gas, CF _{2 gas, and combinations thereof.}

And the control part 1b adjusts the pressure in the chamber 10. The pressure in the chamber 10 is adjusted to be higher than that during plasma processing (eg, etching) of the substrate W. For example, the pressure in the chamber 10 is adjusted to at least about 10 mTorr, preferably from about 10 mTorr to about 200 Torr, more preferably from about 500 mTorr to about 100 Torr.

Then, the control unit 1b supplies RF power (RF signal) to the substrate support unit 11 to the RF power supply unit 30 . At this time, the first RF signal (ie, relatively high frequency power for plasma generation) is supplied from the RF generator 31a to the substrate support 11 . Further, the second RF signal (ie, power of a relatively low frequency for ion attraction) may be supplied from the RF generator 31b to the substrate support 11 . The plasma processing apparatus 1a also includes a DC power supply (DC power supply) configured to supply DC pulse power (DC pulse signal) to the substrate support 11 in addition to or instead of the RF power supply 30 . good to do Accordingly, the plasma processing apparatus 1a includes a power supply configured to supply electric power to the substrate support 11 . An RF power supply may be sufficient as a power supply, and a DC power supply may be sufficient as it. In the cleaning method according to the embodiment, electric power is supplied to the substrate support 11 while supplying a cleaning gas into the chamber 10 to provide a gap between the edge ring 113 and the substrate support 11 in the first position. It has a process for generating a local plasma. Thereby, the lower surface of the edge ring 113 and the second arrangement surface 11b of the substrate support 11 are cleaned. The power supplied is RF power or pulse power. The pulse power is RF pulse power or DC pulse power. In addition, power is supplied to at least one of the lower electrode 111 , a first electrode to be described later, and a second electrode to be described later.

Next, the control unit 1b determines whether or not cleaning has been completed (step S34). For example, the control unit 1b determines that cleaning has been completed when a preset length of time has elapsed. It is also possible to separately determine whether or not cleaning is completed using a sensor or the like. When it is determined that the cleaning has not been completed (step S34, No), the control unit 1b returns to step S33 and continues the process. On the other hand, when it is determined that the cleaning is complete (step S34, Yes), the control unit 1b stops the plasma generation and returns each part of the plasma processing apparatus 1a to the state before the cleaning operation (step S35). This completes the cleaning process.

4 is a view for explaining the positional relationship between the edge ring 113 and the substrate support 11 when the cleaning method according to the embodiment is executed. 4 , the edge ring 113 is lifted from the second mounting surface 11b and held at the first position. For this reason, a substantially closed space is formed between the second arrangement surface 11b and the edge ring 113 . In this state, when high-frequency power is supplied to the lower electrode 111, below the edge ring 113 on the second placement surface 11b with a small space expansion, and on the first placement surface 11a with a large space expansion The plasma density is different. In addition, the deposit can be intensively removed at a position where the plasma density is high. In the example of FIG. 4 , deposits adhering to the lower surface of the edge ring 113, the step portion between the first and second placement surfaces 11a and 11b, and the second placement surface 11b are concentrated. can be removed with In addition, by setting the pressure in the chamber 10 to a relatively high pressure, for example, 10 mTorr or more, the plasma is prevented from diffusing in the approximately closed space between the second placement surface 11b and the edge ring 113 to prevent the plasma density. can be kept high. In addition, since the density of the plasma formed on the first placement surface 11a is low compared to the plasma density on the second placement surface 11b, damage can be suppressed. In addition, in the example of FIG. 4 , high-frequency power for generating local plasma is supplied to the lower electrode 111 . Electric power is supplied to the electrode 112a (first electrode) in the electrostatic chuck 112 from a power source installed separately from the RF power supply unit 30 .

(Using a jig other than an edge ring)

In the above embodiment, cleaning is performed by disposing the edge ring 113 at the first position. Instead of this, for example, a jig having the same shape as that of the edge ring 113 may be disposed at the first position to perform cleaning. For example, when exchanging the edge ring 113 , after the old edge ring 113 is taken out from the chamber 10 , the jig is brought into the chamber 10 before the new edge ring 113 is brought into the chamber 10 to be removed. 2 You may clean the arrangement|positioning surface 11b intensively. In this way, the substrate support 11 side can be cleaned intensively without considering the deposits adhering to the edge ring 113 .

In addition, in order to suppress damage to the 1st placement surface 11a by cleaning, you may arrange|position a dummy wafer on the 1st placement surface 11a, and then perform cleaning. The inner diameter of the edge ring 113 is smaller than the outer diameter of a normal product wafer. For this reason, the edge ring 113 cannot be automatically lifted by the second lifter pin 51b while the product wafer is placed on the first placement surface 11a. Therefore, the outer diameter of the dummy wafer for cleaning is configured to be smaller than the inner diameter of the edge ring 113 . By making the outer diameter of the dummy wafer smaller than that of the product wafer, the edge ring 113 can be automatically raised and lowered while the dummy wafer is placed on the substrate support 11 .

When using the dummy wafer for cleaning, first, the product wafer is taken out of the chamber 10 . Then, the dummy wafer is loaded into the chamber 10 in the same order as when the product wafer is loaded. After that, cleaning is performed in the order shown in FIG.

(Determination of cleaning execution timing)

The determination of the cleaning execution timing in step S31 may be performed, for example, when any of the following is satisfied.

(1) Whether or not etching of a predetermined number of times has been completed.

(2) Whether or not etching of the predetermined number of substrates W has been completed.

(3) whether the cumulative execution time of etching has reached a predetermined length.

(4) Whether the amount of sediment calculated based on the sediment distribution information 622 is equal to or greater than a threshold value.

(5) Whether the electrostatic adsorption operation of the substrate (wafer) or edge ring is normal.

In addition to the above, the cleaning execution timing may be determined based on the following determination.

(1) Whether or not carrying out of the etching-finished substrate W out of the chamber 10 is completed

(2) Whether or not the etching-completed substrate W has been carried out to a position where it does not interfere when the edge ring 113 is lifted to the first position

(3) Whether or not placement of the dummy wafer on the substrate support 11 is completed

(4) Whether or not the arrangement of the cleaning jig on the second arrangement surface 11b has been completed

If the cleaning execution timing is determined based on the above (2), the cleaning start timing can be accelerated, and the cleaning processing efficiency can be further improved.

(Introduction position of cleaning gas)

In the above embodiment, the gas used for cleaning is supplied into the chamber 10 by the gas supply unit 20 . Instead of this, for example, the cleaning gas may be supplied into the chamber 10 from the second through hole 11d formed in the second arrangement surface 11b. In this case, a gas supply path extending from the gas supply unit 20 to the substrate support unit 11 may be further formed to communicate with the second through hole 11d. Accordingly, the cleaning gas is supplied from the second arranging portion of the substrate support 11 to the gap between the edge ring 113 and the second arranging portion. In the case where deposits adhere to the second through-hole 11d during etching, this configuration makes it possible to efficiently remove the deposits.

(Aspect of voltage application)

In the above embodiment, plasma is generated by supplying high-frequency power to the lower electrode 111 . However, when the deposits deposited on the edge ring 113 and the second placement surface 11b are intensively removed, it is more convenient if plasma can be generated by supplying high-frequency power to the vicinity of the second placement surface 11b. . Therefore, Modifications 1 to 6 in which the mode of voltage application is changed will be described below.

(Modification 1)

5A is a diagram showing an example of the configuration of the plasma processing apparatus 1A according to the first modification. FIG. 5A is substantially the same as the plasma processing apparatus 1a shown in FIG. 4 , but the application destination of the voltage from the RF power supply unit 30 is different. The electrostatic chuck 112 included in the plasma processing apparatus 1A illustrated in FIG. 5A includes a first electrode. That is, the substrate support part 11 has a 1st arranging part which arrange|positions a board|substrate, and the 1st arranging part contains a 1st electrode. The first electrode includes an electrode 112a (for adsorption) and an electrode 112b (for bias application). Then, the high-frequency power (for bias) generated by the RF generator 31b is applied to the electrode 112b. The RF generator 31b is an example of the first power supply. In addition, the plasma processing apparatus 1A includes a second electrostatic chuck 112A for adsorbing the edge ring. The second electrostatic chuck 112A includes a second electrode. That is, the substrate support 11 has a second arrangement portion for arranging the edge ring 113 , and the second arrangement portion includes a second electrode. The second electrode includes one or more electrodes 112c (for adsorption) and an electrode 112d (for bias application). The plasma processing apparatus 1A also includes a second power supply 35 . The second power supply unit 35 includes an RF generation unit 35a and DC power supply units 35b and 35c. The RF generator 35a is an example of the second power supply. The second power supply 35 is configured to supply power to the second electrostatic chuck 112A independently of the RF power supply 30 . In the example of FIG. 5A , two electrodes 112c constitute a bipolar electrode. _{By applying the DC voltages H va} , H _vb to generate a potential difference to the two electrodes 112c , the edge ring 113 is attracted.

During etching, the RF signal RF _HF is supplied from the RF generator 31a to the lower electrode 111 to generate plasma. In addition, a bias is generated by supplying the _{RF signal RF W} from the RF generator 31b to the electrode 112b. Further, DC power (DC power) is supplied to the electrode 112a from a power source (not shown) to electrostatically attract the substrate W to the electrostatic chuck 112 . During etching, the second power supply unit 35 supplies DC voltages H _va , H _vb to the electrodes 112c from the DC power supply units 35b and 35c to generate a potential difference between the two electrodes 112c, The edge ring 113 is adsorbed to the second mounting surface 11b. In addition, the RF signal RF _ER for bias may be supplied to the electrode 112d from the RF generator 35a. During etching, the substrate W to be processed and the edge ring 113 are respectively adsorbed to the substrate support 11 by the corresponding electrostatic chucks. In addition, power for bias is supplied to the vicinity of the arrangement surface. In addition, at the time of etching, you may make the voltage applied to the two electrodes 112c the same. For example, both the voltages applied to the two electrodes 112c may have the same polarity (eg, positive polarity) as the polarity applied when the substrate W is electrostatically adsorbed.

FIG. 5B is a diagram for explaining the positional relationship of each part when cleaning is performed using the plasma processing apparatus 1A according to the first modification.

At the time of cleaning, the DC power supply from the DC power supply units 35b and 35c is also turned off. The edge ring 113 is lifted from the second placement surface 11b to the first position. Then, a voltage for plasma generation is applied to the substrate support 11 . In the first modification, the RF signal is not supplied from the RF generators 31a and 31b during cleaning. Meanwhile, an RF signal is supplied from the RF generator 35a to the electrode 112d. Thereby, a local plasma is generated in the space between the edge ring 113 and the second arrangement surface 11b. Further, the power from the RF generator 31a may be mainly supplied to the edge ring.

In addition, the electrode 112c of the second electrostatic chuck 112A may be a single electrode. In addition, the edge ring 113 may be adsorbed to the substrate support 11 by applying a DC voltage to the monopolar electrode.

5A and 5B, the electrostatic chuck for the substrate and the electrostatic chuck for the edge ring are separately provided. It is not limited to this, You may arrange|position in correspondence with the electrode for a board|substrate, the electrode for edge rings, and each arrangement|positioning position in one dielectric material. In addition, in the example of FIG. 5A and FIG. 5B, the electric power supply to the 1st mounting surface 11a and the electric power supply to the 2nd mounting surface 11b were performed from different power supply parts. It is not limited to this, You may perform power supply to the 1st mounting surface 11a and the 2nd mounting surface 11b vicinity from a common power supply part (refer FIGS. 9 and 10). Moreover, you may arrange|position a heat transfer sheet etc. between the edge ring 113 and the 2nd mounting surface 11b.

(Modification 2)

6A is a diagram showing an example of the configuration of the plasma processing apparatus 1B according to the second modification. In the plasma processing apparatus 1B, an RF signal is supplied to the lower electrode 111 from the RF power supply unit 30, similarly to the plasma processing apparatus 1a shown in FIG. An electrode 112a is disposed in the electrostatic chuck 112 . In addition, in the plasma processing apparatus 1B, a second electrostatic chuck 112A is disposed under the second mounting surface 11b. An electrode 112c (second electrode) is disposed in the second electrostatic chuck 112A. The electrode 112c is the same as that shown in FIG. 5A. However, unlike the plasma processing apparatus 1A of FIG. 5A , the plasma processing apparatus 1B does not include the electrode 112d. In addition, blocking elements 35d and 35e are disposed between the RF generator 35a and the electrode 112c.

In the second modification, an RF signal is supplied to the lower electrode 111 from the RF generators 31a and 31b during etching. Further, direct current power from a power source (not shown) is supplied to the electrode 112a (first electrode, for adsorption). Further, DC power for adsorption is supplied to the electrode 112c of the second electrostatic chuck 112A from the DC power supply units 35b and 35c.

FIG. 6B is a diagram for explaining the positional relationship of each part when cleaning using the plasma processing apparatus 1B according to the second modification. During cleaning, the power supply from the DC power supply units 35b and 35c is turned off. Then, the edge ring 113 is lifted to the first position. Then, a local plasma is generated between the edge ring 113 and the second arrangement surface 11b by supplying an RF signal from the RF generator 35a to the electrode 112c. Further, the blocking elements (filters) 35d and 35e are, for example, blocking capacitors, and prevent the current supplied from the DC power supply units 35b and 35c to the electrode 112c from flowing to the RF generation unit 35a.

(Modified example 3)

7A is a diagram showing an example of the configuration of the plasma processing apparatus 1C according to the third modification. Unlike the plasma processing apparatuses 1A and 1B, the plasma processing apparatus 1C does not have the electrode 112c (for adsorption) under the second mounting surface 11b, and the electrode 112d (for bias application) is not provided. have only The configuration on the substrate W side is the same as in the first modification.

FIG. 7B is a diagram for explaining the positional relationship of each part when cleaning using the plasma processing apparatus 1C according to the third modification. When cleaning is performed, first, the edge ring 113 is raised to the first position by the second lifter pin 51b. Then, an RF signal is supplied from the RF generator 35a to the electrode 112d. Thereby, a local plasma is generated between the edge ring 113 and the second placement surface 11b. It is cleaned by the generated plasma. When the RF signal is supplied to the lower electrode 111 , plasma is easily generated on the substrate W as well. Therefore, by selecting the height of the edge ring 113 and the pressure in the chamber 10 , it becomes possible to generate plasma centrally in the gap between the edge ring 113 and the substrate support 11 .

(Variation 4)

8 is a diagram showing an example of the configuration of the plasma processing apparatus 1D according to the fourth modification. The plasma processing apparatus 1D includes a second electrostatic chuck 112A under the second mounting surface 11b. An electrode 112c (a second electrode for adsorption) is disposed in the second electrostatic chuck 112A. In addition, the plasma processing apparatus 1D includes a dielectric ring 112B on the outer peripheral side of the second electrostatic chuck 112A. The dielectric ring 112B is formed of, for example, quartz, and has a ring shape surrounding the periphery of the lower electrode 111 . In the dielectric ring 112B, an electrode 112d (a second electrode, for applying a bias) is disposed. The electrode 112c is supplied with DC power from the DC power supply units 35b and 35c. An RF signal is supplied to the electrode 112d from the RF generator 35a. In addition, the dielectric ring 112B has a second through hole 11d therethrough, and the second lifter pin 51b is capable of lifting and lowering the edge ring 113 through the second through hole 11d. . The configuration on the substrate W side is the same as that of the plasma processing apparatus 1a of FIG. 4 .

At the time of etching, an RF signal is supplied to the lower electrode 111 from the RF generators 31a and 31b, and an RF signal is supplied from the RF generator 35a to the electrode 112d. Further, DC power is supplied to the electrode 112a from a power source (not shown), and the edge ring 113 is formed on the second mounting surface 11b by DC power supplied from the DC power supply units 35b and 35c to the electrode 112c. ) is adsorbed to At the time of cleaning, the power supply to the electrode 112c is turned off, and the edge ring 113 is raised to the first position with the second lifter pin 51b. Then, a local plasma is generated by applying an RF signal to the electrode 112d. Thereby, a local plasma is generated between the lower surface of the edge ring 113 and the second arrangement surface 11b as in the other modified examples. It is cleaned by the generated plasma.

(Variation 5)

9 is a diagram showing an example of the configuration of the plasma processing apparatus 1E according to the fifth modification. The configuration of the plasma processing apparatus 1E is the same as that of the plasma processing apparatus 1C according to Modification Example 3 (see FIG. 7A ), but the RF signal from the RF generator 31b is applied to the electrode 112d on the edge ring 113 side. ) can also be supplied. In the example of FIG. 9 , the first line L1 for RF signal supply extending from the RF generator 31b is branched to the second line L2 on the way. The second line L2 connects the RF generator 31b and the electrode 112d. Moreover, on the 2nd line L2, the switching element SW1 is arrange|positioned. The switching element SW1 is, for example, a variable impedance element. Moreover, you may arrange|position a power distribution circuit instead of switching element SW1. Switching element SW1 is an example of a 1st switching element.

In the plasma processing apparatus 1E, the balance of the RF signal supplied to the electrode 112b and the RF signal supplied to the electrode 112d by the switching element SW1 is adjusted in an example at the time of etching in the plasma processing apparatus 1E. For example, the impedance is adjusted by the switching element SW1 in order to make the plasma distribution during etching uniform. In another example, at the time of etching, the ratio of the RF signal supplied to the electrode 112b and the electrode 112d may be adjusted so that high frequency power may also be supplied to the edge ring 113 side. By configuring in this way, the in-plane density and etching rate of plasma can be adjusted. Therefore, plasma processing is performed with respect to the board|substrate W before the cleaning mentioned later. In the plasma processing, first electric power is supplied from the RF generator 31b to the electrode 112b or the lower electrode 111 . In the plasma processing, the first electric power may also be supplied to the electrode 112d.

At the time of cleaning, the power supply to the electrode 112d is turned off, and the edge ring 113 is raised to the first position with the second lifter pin 51b. Then, a local plasma is generated by applying an RF signal to the electrode 112d. At this time, opposite to the time of etching, the switching element SW1 is set so that the electric power supplied to the electrode 112d may increase rather than the electric power supplied to the electrode 112b. In addition, at the time of cleaning, more electric power is supplied than at the time of etching. Thereby, a local plasma is generated between the lower surface of the edge ring 113 and the second arrangement surface 11b. It is cleaned by the generated plasma. Accordingly, in the cleaning process, the second power greater than the first power is supplied from the RF generator 31b to the electrode 112d via the switching element SW1.

With this configuration, without increasing the power generating unit, one power generating unit can be shared between the substrate W side and the edge ring 113 side, and the bottom of the arrangement surface can be effectively utilized to suppress the increase in the footprint of the device. can

(Variation 6)

10 is a diagram showing an example of the configuration of the plasma processing apparatus 1F according to the sixth modification. The configuration of the plasma processing apparatus 1F is substantially the same as that of the plasma processing apparatus 1E of the fifth modification. However, the plasma processing apparatus 1F is provided with the switching element SW2 arrange|positioned on the 1st line L1 in addition to the switching element SW1. The switching element SW2, like the switching element SW1, is, for example, a variable impedance element. Switching element SW2 is an example of a 2nd switching element. Further, a power distribution circuit may be disposed in place of each of the switching elements SW1 and SW2. In this way, by providing the switching elements in both the first line L1 and the second line L2, the amount of electric power applied to each of the electrode 112b and the electrode 112d can be further finely adjusted.

During etching, an RF signal is supplied from the RF generator 31a to the lower electrode 111 . In addition, a bias is generated by supplying an RF signal from the RF generator 31b to the electrode 112b. Further, by supplying an RF signal from the RF generator 31b to the electrode 112d, the edge ring 113 is electrostatically attracted to the second mounting surface 11b. Further, DC power is supplied to the electrode 112a from a power source (not shown) to electrostatically attract the substrate W to the electrostatic chuck 112 . During etching, the balance of the RF signal supplied to the electrode 112b and the RF signal supplied to the electrode 112d is adjusted by the switching elements SW1 and SW2. The mode of adjustment is the same as that of modification 5.

At the time of cleaning, the power supply to the electrode 112d is turned off, and the edge ring 113 is raised to the first position with the second lifter pin 51b. Then, a local plasma is generated by applying an RF signal to the electrode 112d. At this time, opposite to the time of etching, the switching elements SW1 and SW2 are set so that the electric power supplied to the electrode 112d increases rather than the electric power supplied to the electrode 112b. In addition, at the time of cleaning, more electric power is supplied than at the time of etching. Thereby, a local plasma is generated between the lower surface of the edge ring 113 and the second arrangement surface 11b. It is cleaned by the generated plasma.

Modifications 1 to 6 were described. In each modification, the electric power applied to the first electrodes 112a and 112b, the second electrodes 112c and 112d, and the lower electrode 111 may be a high-frequency electric power previously set for plasma generation during etching. In addition, high frequency power for bias generation may be added and applied. Alternatively, a voltage may be applied from a DC power supply provided separately.

In addition, in the said embodiment, the generation source of a plasma is not specifically limited, You may use a remote radical source. Alternatively, the cleaning may be performed using a physical impact by generating plasma on the upper electrode side.

(Effect of embodiment)

As described above, in the cleaning method according to the embodiment, an edge ring disposed on a mounting table in a chamber defining a plasma processing space is disposed at a first position spaced apart from the mounting table. Also, in the cleaning method, a voltage is applied to the mounting table while supplying gas to the chamber while the edge ring is maintained in the first position to generate a local plasma between the edge ring and the mounting table. In the cleaning method, deposits adhering to at least one of the edge ring and the mounting table are removed by the generated plasma. In this way, the cleaning method according to the embodiment places the edge ring in the first position to form a substantially closed space between the mounting table and the edge ring, and then generates plasma. For this reason, according to the present cleaning method, it is possible to efficiently clean at least one of the edge ring and the mounting table by generating a local plasma.

Further, in the cleaning method according to the above embodiment, the first position is a position where the distance between the lower surface of the edge ring and the upper surface of the mounting table is in the range of 2 millimeters to 20 millimeters. According to this cleaning method, by arranging the edge ring at such a position, it is possible to form a substantially closed space capable of efficiently generating a local plasma.

Further, in the cleaning method according to the above embodiment, in the removing step, the pressure in the chamber is set higher than the pressure at the time of processing the substrate. For example, in the cleaning method, in the removing step, the pressure in the chamber is set within the range of 100 Torr to 10 Torr. For this reason, according to the present cleaning method, it is possible to efficiently generate a local plasma by suppressing the diffusion of the generated plasma.

Further, in the cleaning method according to the above embodiment, in the removing step, an oxygen-containing gas is supplied to the chamber.

Further, in the cleaning method according to the above embodiment, in the removing step, a voltage is supplied to at least one of the lower electrode, the first electrode, and the second electrode to generate plasma. Further, the lower electrode is disposed on the mounting table, the first electrode is disposed in the first mounting surface on which the substrate is disposed, and the second electrode is disposed in the second mounting surface on which the edge ring is disposed.

Further, in the cleaning method according to the above embodiment, in the removing step, the supply path of the voltage applied to either the lower electrode or the first electrode is switched, and the voltage is supplied to the second electrode. Further, the cleaning method according to the above embodiment further includes a step of disposing a protective substrate (small-diameter wafer) on the first placement surface, and in the removing step, the protective substrate is disposed on the first placement surface. , to clean the edge ring and substrate support.

Further, the plasma processing apparatus according to the embodiment includes a chamber, a mounting table, a lifting device, a gas supply unit, a power supply unit, and a control unit. The chamber defines a processing space in which plasma processing is performed. The mounting table is disposed within the chamber, and the substrate and edge ring are disposed. The lifting device raises and lowers the edge ring. The gas supply unit supplies gas to the processing space. The power supply unit supplies a voltage to the mounting table. The control unit causes each unit to perform a process of arranging the edge ring at a first position in which the upper surface of the second arrangement surface and the lower surface of the edge ring are spaced apart. In addition, while the edge ring is maintained in the first position, the controller applies a voltage to the mounting table while supplying gas to the chamber to generate a local plasma between the edge ring and the mounting table. Then, the control unit causes each unit to perform a step of removing the deposits adhering to at least one of the edge ring and the mounting table with the generated plasma.

Moreover, the plasma processing apparatus which concerns on embodiment is further equipped with the carrying-in/out apparatus which carries in an edge ring into a chamber, and carries out an edge ring from a chamber. At least one of a raising/lowering apparatus and carrying-in/out apparatus performs the process of arrangement|positioning.

Further, in the plasma processing apparatus according to the embodiment, the mounting table includes a lower electrode disposed in the first mounting surface on which the substrate is disposed. In addition, the power supply unit generates plasma by supplying a voltage to the lower electrode during the removal process.

Further, in the plasma processing apparatus according to the embodiment, the mounting table includes a first mounting surface on which a substrate is arranged, a first electrode arranged in the first mounting surface, and a lower electrode arranged under the first electrode. . The power supply unit generates plasma by supplying power to any one of the first electrode and the lower electrode during the removal process.

Further, in the plasma processing apparatus according to the embodiment, the mounting table includes a first electrode disposed in a first mounting surface on which a substrate is disposed, a second electrode disposed in a second mounting surface on which an edge ring is disposed, and the first and a lower electrode disposed under the electrode and the second electrode. The power supply unit generates plasma by supplying power to any one of the first electrode, the second electrode, and the lower electrode during the removal process.

Further, in the plasma processing apparatus according to the embodiment, the power supply unit includes a first line for connecting the first electrode and the power supply. Further, the power supply unit includes a second line branched from the first line to connect the second electrode and the power source. Moreover, the power supply part is arrange|positioned on the 2nd line, and is equipped with the 1st switching element which switches the supply destination of the high frequency voltage supplied from a power supply between a 1st electrode and a 2nd electrode.

Further, in the plasma processing apparatus according to the embodiment, the power supply unit further includes a second switching element disposed on the first line and configured to switch a supply destination of the high frequency voltage supplied from the power source between the first electrode and the second electrode. be prepared

Further, in the plasma processing apparatus according to the embodiment, the power supply unit includes a first power supply unit for supplying power to the first electrode, and a second power supply unit configured separately from the first power supply unit for supplying power to the second electrode. 2 A power supply is provided. Then, the control unit controls the power supply unit to turn off the first power supply unit and turn on the second power supply unit during the removing process. In addition, the plasma processing apparatus according to the embodiment further includes an EPD device configured to detect when to stop cleaning during the removing process. In addition, the plasma processing apparatus according to the embodiment further includes a detection device for detecting the light emission intensity and/or current of the plasma during the removing process. And the control part is configured to control the lifting device to change the height of the edge ring based on the detection result of the detection device.

As mentioned above, although various exemplary embodiment has been described, it is not limited to the above-mentioned exemplary embodiment, and various additions, omissions, substitutions, and changes may be made. It is also possible to combine elements from different embodiments to form other embodiments.

1: plasma processing system 1a: plasma processing apparatus
1b: control unit 10: chamber
10s: Plasma processing space 11: Substrate support (placement table)
11a: 1st placement surface (substrate (W) side placement surface)
11b: second placement surface (edge ring (ER) side placement surface) 11c: first through hole
11d: second through hole 111: lower electrode
112: electrostatic chuck 112a, 112b, 112c, 112d: electrode
113: edge ring 12: upper electrode shower head
12a: gas inlet 12b: gas diffusion chamber
12c: gas outlet 20: gas supply
21: gas source 22: flow controller
30: Radio Frequency (RF) power supply (RF power)
31a, 31b: RF generator 32a, 32b: matching circuit
35: second power supply 35a: RF generator
35b, 35c: DC power supply 40: exhaust system
50: lifting device 51a: first lifter pin
52a: first actuator 51b: second lifter pin
52b: second actuator 61: computer
611: processing unit 612: storage unit
613: communication interface 1000: transport system
ATM: Standby Return Room ER: Edge Ring
FP (FP1 to FP3): Storage container LLM (LLM1, LLM2): Load lock module
PM (PM1 to PM6): processing device TM1: first conveying device
TM2: Second conveying device VTM: Vacuum conveying chamber
L1: first line L2: second line
SW1: switching element SW2: switching element
W: substrate

Claims (18)

a plasma processing chamber;
a substrate support disposed within the plasma processing chamber;
an edge ring disposed on the substrate support to surround the substrate on the substrate support;
an elevating device for elevating the edge ring;
a gas supply configured to supply a cleaning gas to the plasma processing chamber;
a power source configured to supply power to the substrate support;
control
to provide
The control unit is
a) holding the edge ring in a first position spaced apart from the substrate support;
b) supplying electric power to the substrate support while supplying the cleaning gas to the plasma processing chamber to create a local plasma in a gap between the edge ring in the first position and the substrate support, whereby the edge ring and cleaning the substrate support.
Plasma processing apparatus that is configured to perform. The plasma processing apparatus of claim 1 , wherein the power is RF power or pulsed power. The plasma processing apparatus according to claim 2, wherein the pulse power is RF pulse power or DC pulse power. The apparatus of claim 1, further comprising: a loading/unloading device configured to load an edge ring into the plasma processing chamber and unload the edge ring from the plasma processing chamber;
At least one of the lifting device and the carrying-in/out device executes the step a). The method of claim 1, wherein the substrate support includes a lower electrode,
In the step b), the plasma processing apparatus in which electric power is supplied to the lower electrode. According to claim 1, wherein the substrate support portion,
a first arranging unit for arranging the substrate;
a first electrode disposed in the first arrangement part;
a lower electrode disposed under the first electrode
to provide
In the step b), power is supplied to any one of the first electrode and the lower electrode. According to claim 1, wherein the substrate support portion,
a first arranging unit for arranging the substrate;
a first electrode disposed in the first arrangement part;
a second arrangement for arranging the edge ring;
a second electrode disposed in the second arrangement part;
a lower electrode disposed under the first electrode and the second electrode
to provide
In step b), power is supplied to any one of the first electrode, the second electrode, and the lower electrode. 8. The method of claim 7, further comprising: a first line connecting the first electrode and the power source;
a second line connecting the second electrode and the power source;
a variable impedance element disposed on the second line
Plasma processing apparatus further comprising. The plasma processing apparatus according to claim 8, further comprising another variable impedance element disposed on the first line. The method of claim 7, wherein the power source,
a first power source configured to supply a first power to the first electrode;
a second power source configured to supply a second power to the second electrode
including,
The control unit is
In step b), controlling the first power supply to stop supply of the first electric power to the first electrode, and controlling the second power supply to supply the second electric power to the second electrode Phosphorus plasma processing device. A cleaning method comprising:
a) moving an edge ring disposed on a substrate support in a plasma processing chamber to a first position spaced apart from the substrate support;
b) supplying electric power to the substrate support while supplying a cleaning gas to the plasma processing chamber to create a local plasma in a gap between the edge ring in the first position and the substrate support, thereby creating a plasma in the edge ring and cleaning the substrate support
A cleaning method comprising a. The method of claim 11 , wherein the power is RF power or pulsed power. The cleaning method according to claim 12, wherein the pulse power is RF pulse power or DC pulse power. 12. The method of claim 11, wherein the distance between the gaps is in the range of 1 millimeter to 20 millimeters. The cleaning method according to claim 11, wherein in step b), a pressure in the plasma processing chamber is higher than a pressure during substrate processing. The cleaning method according to claim 15, wherein in the step b), the pressure in the plasma processing chamber is set within a range of 10 mTorr to 100 Torr. The method of claim 11 , wherein the cleaning gas includes a gas selected from the group consisting of an _{oxygen-containing gas, NH 3} gas, NF ₃ gas, CF _{2 gas, and combinations thereof.} The cleaning method according to claim 11 , wherein the cleaning gas is supplied to the gap from the substrate support part.

Images