KR20210104436A - Metal mask, apparatus for processing substrate having the same and method for manufacturing the same - Google Patents

Abstract

The present invention relates to a metal mask, a substrate processing apparatus, and a metal mask manufacturing method. With the present invention, rigidity can be ensured and shadowing can be prevented or suppressed at the same time. The metal mask includes: a metal sheet; and processing holes formed in the metal sheet. Each of the processing holes includes: a first open portion in a first surface of the metal sheet; a second open portion in a second surface facing the first surface of the metal sheet; and an inside surface connecting the first open portion and the second open portion. The processing holes may include at least one asymmetrical processing hole where the inside surface is inclined asymmetrically.

Description

A metal mask, a substrate processing apparatus including the same, and a metal mask manufacturing method TECHNICAL FIELD

The present invention relates to a metal mask, a substrate processing apparatus including the same, and a metal mask manufacturing method, and more particularly, to a metal mask capable of securing rigidity while preventing or suppressing shadow generation, a substrate processing apparatus including the same, and a metal mask It relates to a manufacturing method.

When manufacturing an Active Matrix Organic Light-Emitting Diode (AMOLED), a vacuum deposition process is performed to deposit multiple layers of organic materials, and different organic materials must be deposited for each RGB (Red, Green, Blue) pixel. do. In this case, a fine metal mask (FMM) is used to deposit a desired organic material only on a desired pixel and serve as a screen mask so that the organic material is not deposited on other areas.

In the related art, when manufacturing a fine metal mask (FMM), a hole for depositing an organic material is formed on a sheet of a fine metal mask (FMM) through a wet etching method. Recently, as the size of the organic light emitting diode (OLED) increases and the resolution increases, in the case of manufacturing a fine metal mask (FMM) using this wet etching method, the size of the fine metal mask (FMM) sheet and the fine metal mask (FMM) There is a limit to the precision of the opening formed in the sheet.

In addition, since it is impossible to control the shape of each opening individually with this wet etching method, shadow generation can be prevented in the case of a fine metal mask (FMM) for making a high-resolution panel of 500 PPI (Pixel Per Inch) or more. In order to secure the taper angle of the opening, the pitch between the openings in the fine metal mask (FMM) sheet is inevitably dense, and the processing overlaps, so the thickness of the fine metal mask (FMM) sheet is 20 μm or less. may be thin, and there is a problem in that the rigidity of the fine metal mask (FMM) sheet is reduced. This makes the fine metal mask (FMM) sheet very hard to handle (or handling of the fine metal mask) sheet, making it very difficult to weld, making the fine metal mask (FMM) sheet for making high-resolution panels. FMM) was difficult to manufacture.

Accordingly, there is a need for a method of manufacturing a metal mask for a high-resolution panel capable of securing the rigidity of a fine metal mask (FMM) sheet while preventing or suppressing the occurrence of shadows.

Korean Patent Publication No. 10-1786391

The present invention provides a metal mask capable of securing rigidity while preventing or suppressing the occurrence of shadows by forming a plurality of processing holes in which the inclination angle of the inner surface is individually controlled through irradiation of a laser beam, a substrate processing apparatus including the same, and a metal mask A manufacturing method is provided.

A metal mask according to an embodiment of the present invention includes a metal sheet; and a plurality of processing holes formed in the metal sheet, wherein each of the plurality of processing holes includes: a first open portion provided on a first surface of the metal sheet; a second opening portion provided on a second surface opposite to the first surface of the metal sheet; and an inner surface connecting the first open portion and the second open portion, wherein the plurality of processing holes may include one or more asymmetric processing holes having the inner surface inclined asymmetrically.

The plurality of processing holes may further include a reference processing hole in which the inclination angle of the inner surface is symmetrical.

The first open portion has a larger area than the second open portion, each of the second open portions is arranged at regular intervals, and the second open portion of the reference processing hole is located at the center of the first open portion of the reference processing hole, The second open portion of the asymmetric processing hole may be located away from the center of the first open portion of the asymmetric processing hole.

Each of the plurality of processing holes has the same area of the first open portion, and each of the asymmetric processing holes has a distance between the center of the first open portion and the center of the second open portion in proportion to the distance from the reference processing hole. can be decided.

The asymmetric processing hole may have a different area from the reference processing hole.

In each of the asymmetric processing holes, as the distance from the reference processing hole increases, the inclination angle of the inner surface of the side closer to the reference processing hole decreases, and the inclination angle of the inner surface on the side farther from the reference processing hole is closer to the reference processing hole. may be greater than the inclination angle of

A metal mask according to another embodiment of the present invention includes a metal sheet; and a reference processing hole, and a plurality of processing holes formed in the metal sheet, wherein each of the plurality of processing holes includes: a first open portion provided on a first surface of the metal sheet; a second opening portion provided on a second surface opposite to the first surface of the metal sheet; and an inner surface connecting the first open portion and the second open portion, wherein at least one inner surface of the other processing hole among the plurality of processing holes may be inclined at an angle different from that of the same side inner surface of the reference processing hole. have.

A substrate processing apparatus according to another embodiment of the present invention includes a metal mask according to an embodiment or another embodiment of the present invention; and an evaporation source provided aligned with the reference processing hole.

A method of manufacturing a metal mask according to another embodiment of the present invention includes the steps of setting a plurality of processing regions on a metal sheet; and forming a processing hole by irradiating a laser beam to the plurality of processing regions, wherein the forming of the processing hole includes the processing of the plurality of processing regions such that the energy accumulation distribution by the laser beam in the processing region becomes asymmetric. It may include the process of forming an asymmetric machining hole by machining at least one machining area among the areas.

The forming of the machining hole may further include forming a reference machining hole by machining a reference machining area selected from among the plurality of machining areas so that the energy accumulation distribution by the laser beam in the machining area is symmetrical.

Each of the plurality of processing areas includes a first open area of a first surface to which the laser beam is irradiated and a second open area of a second surface opposite to the first surface, wherein the second open area is the reference processing It may be located at the center of the first open area in the region, and may be located outside the center of the first open area in the at least one processing area.

The at least one processing region may have an area different from the reference processing region.

The forming of the processing hole may include: first irradiating the laser beam at least partially to each of the plurality of processing regions; and secondarily irradiating the laser beam to a region having a different area from that of the primary irradiation in each of the processing regions.

In the process of forming the processing hole, the plurality of processing areas while moving the irradiation position of the laser beam along a scan path including a scan line parallel to the long axis of the metal sheet and a step line parallel to the short axis of the metal sheet and the scan pitch of the laser beam is constant in the area corresponding to the second open area, and the scan pitch of the laser beam approaches the area corresponding to the second open area in the remaining area within the processing area. may be smaller.

The metal mask according to the embodiment of the present invention has an asymmetrically inclined inner surface of at least one of the plurality of processing holes, thereby preventing or suppressing the occurrence of shadows due to the difference in distance from the evaporation source while being able to prevent or suppress the occurrence of shadows It is possible to secure rigidity, and it is possible to provide a metal mask for a high-resolution panel having sufficient rigidity even in a metal mask for a high-resolution panel.

In addition, the substrate processing apparatus of the present invention can effectively prevent or suppress shadow generation by using a metal mask in which the inclination angle of the inner surface of the processing hole is adjusted according to the difference in distance from the evaporation source. By increasing the side inclination angle to increase the volume of the metal mask, rigidity of the metal mask may be secured.

And the metal mask manufacturing method of the present invention can form a plurality of processing holes in which the inclination angle of the inner surface is individually controlled by irradiating a laser beam to form a processing hole, It can be processed so that the energy accumulation distribution is asymmetrical, and accordingly, it is possible to manufacture a metal mask capable of securing rigidity while preventing or suppressing shadow generation due to a difference in distance from an evaporation source. At this time, by irradiating the laser beam multiple times in the processing area with different center positions and areas, or by adjusting the scan pitch of the laser beam in the processing area, it is possible to process so that the energy accumulation distribution of the processing area becomes asymmetrical, and It is possible to form a processing hole with asymmetrically inclined side surfaces.

1 is a perspective view showing a metal mask according to an embodiment of the present invention.
Figure 2 is a conceptual view for explaining the inner surface of the processing hole according to an embodiment of the present invention.
3A is a conceptual diagram for explaining the relationship between the inclination angle of the inner surface of the machining hole on the left side of the reference machining hole and the energy accumulation distribution according to an embodiment of the present invention.
3B is a conceptual diagram for explaining the relationship between the inclination angle of the inner surface of the reference machining hole and the energy accumulation distribution according to an embodiment of the present invention.
3C is a conceptual diagram for explaining the relationship between the inclination angle of the inner surface of the machining hole on the right side of the reference machining hole and the energy accumulation distribution according to an embodiment of the present invention.
Figure 4 is a conceptual diagram for explaining the difference in the inner surface inclination angle according to the position of the reference processing hole and the asymmetric processing hole according to an embodiment of the present invention.
5 is a schematic cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.
6 is a flowchart illustrating a method for manufacturing a metal mask according to another embodiment of the present invention.
7 is a conceptual diagram for explaining a method of processing by irradiating a laser beam a plurality of times in a processing area in different areas according to another embodiment of the present invention.
8 is for explaining a method of changing the inclination angle of the inner surface of the machining hole by changing the energy accumulation distribution of the machining area as it is processed by irradiating a laser beam multiple times in the machining area with different areas according to another embodiment of the present invention concept diagram.
9 is a conceptual diagram for explaining a laser beam scanning method according to another embodiment of the present invention.
10 is a conceptual diagram for explaining a method of processing by adjusting a scan pitch of a laser beam in a processing area according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and the scope of the invention to those of ordinary skill in the art will be completely It is provided to inform you. In the description, the same reference numerals are assigned to the same components, and the sizes of the drawings may be partially exaggerated in order to accurately describe the embodiments of the present invention, and the same reference numerals refer to the same elements in the drawings.

1 is a perspective view showing a metal mask according to an embodiment of the present invention.

Referring to FIG. 1 , a metal mask 100 according to an embodiment of the present invention includes a metal sheet 110 ; and a plurality of processing holes 120 formed in the metal sheet 110 .

In general, the metal mask 100 may be a fine metal mask (FMM) used in a vacuum deposition process in the manufacture of organic EL (Electro Luminescence) or organic semiconductor devices, and the metal sheet 110 is such It may be a metal sheet used for a fine metal mask (FMM), may be made of a metal material, and may be processed with a laser. For example, the metal sheet 110 may be made of a metal called INVAR, which is an alloy having a very small coefficient of thermal expansion by adding 36% of nickel (Ni) to 64% of iron (Fe). Or, it is used in machines that cause errors when the dimensions change due to temperature changes, such as parts of optical machines and parts of watches.

The plurality of processing holes 120 may be formed in the metal sheet 110, may be formed regularly, and may be processed by irradiation of a laser beam.

2 is a conceptual diagram for explaining an inner surface of a processing hole according to an embodiment of the present invention, and is a cross-sectional view of the metal sheet 110 cut along A-A'.

Referring to FIG. 2 , each of the plurality of processing holes 120 includes a first open portion 121 provided on the first surface 111 of the metal sheet 110 ; a second opening portion 122 provided on a second surface 112 opposite to the first surface 111 of the metal sheet 110; and an inner surface 123 connecting the first open part 121 and the second open part 122 .

The first open portion 121 may be provided on the first surface 111 of the metal sheet 110 and may communicate with the opposing second open portion 122 .

The second open portion 122 may be provided on the second surface 112 opposite to the first surface 111 of the metal sheet 110 and may communicate with the opposite first open portion 121 .

For example, the first surface 111 of the metal sheet 110 may be a surface on which a laser beam is irradiated to start processing, and the second open part 122 is processed from the first surface 111 by the laser beam. This may be a portion formed on the second surface 112 of the metal sheet 110 while the laser beam penetrates the metal sheet 110 . In addition, the first open part 121 may be a portion through which a deposition material (or deposition gas) enters the processing hole 120 from the evaporation source 210 , and the second open part 122 is disposed within the processing hole 120 . may be a portion from which the deposition material is discharged.

The inner surface 123 may connect the first open part 121 and the second open part 122 , and the center position and/or the size difference between the first open part 121 and the second open part 122 . Accordingly, the inclination angle (or inclination) may be determined. Here, the inner surface 123 may connect the first surface 111 and the second surface 112 of the metal sheet 110 to induce the flow of the deposition material in the processing hole 120 .

Here, the plurality of processing holes 120 may include one or more asymmetric processing holes 120b in which the inner surface 123 is asymmetrically inclined. In the asymmetric processing hole 120b, the inner surface 123 may be asymmetrically inclined, the inner surface 123 opposite to each other may be asymmetric, and the inclination angle between the inner surfaces 123 opposite to each other may be different from each other. . Through this, the inner surface 123 of either side may have a gentle inclination angle that can prevent or suppress the occurrence of shadows according to the difference in distance from the evaporation source 210, and The inner surface 123 may be inclined relatively rapidly to increase the volume of the metal mask 100 , and accordingly, rigidity of the metal mask 100 may be secured.

Conventionally, a plurality of machining holes 120 are machined so that the inner surface 123 is symmetrical, and even when a taper angle of the machining hole 120 that can prevent shadow generation is secured, all of them have the same inclination angle. The machining hole 120 was machined to form the inner surface 123 . In addition, in the prior art, when manufacturing a fine metal mask (FMM), the inner surface 123 had to be symmetrical because the processing hole 120 was formed in the metal sheet 110 through a wet etching method. and the inclination angles of the inner surface 123 were all the same even between the plurality of processing holes 120 . In this case, in the case of a fine metal mask (FMM) for making a high-resolution panel of 500 PPI (Pixel Per Inch) or more, the pitch between the plurality of processing holes 120 inevitably becomes dense, and the processing overlaps by 20 μm. Below, the thickness of the metal sheet 110 may be reduced, and there is a problem in that the rigidity of the metal mask 100 is reduced.

However, in the present invention, by gently adjusting the inclination angle of the inner surface 123 on the side close to the evaporation source 210 according to the distance difference from the evaporation source 210, and making the inclination angle of the inner surface 123 on the other side relatively sharp, It is possible to prevent or suppress the occurrence of shadows due to the difference in distance from the evaporation source 210 , and at the same time increase the volume of the metal mask 100 to secure the rigidity of the metal mask 100 . Accordingly, even in the high-resolution panel metal mask 100 , the thickness of the metal sheet 110 can be maintained at 20 μm or more, and the rigidity of the metal mask 100 can be sufficiently secured.

Figure 3a is a conceptual diagram for explaining the relationship between the inclination angle and energy accumulation distribution of the inner surface of the machining hole on the left side of the reference machining hole according to an embodiment of the present invention, Figure 3b is the inner surface of the reference machining hole according to an embodiment of the present invention It is a conceptual diagram for explaining the relationship between the inclination angle and the energy accumulation distribution, and FIG. 3C is a conceptual diagram for explaining the relationship between the inclination angle and the energy accumulation distribution of the inner surface of the machining hole on the right side of the reference machining hole according to an embodiment of the present invention.

2 and 3A to 3C , the plurality of processing holes 120 may further include a reference processing hole 120a in which the inclination angle of the inner surface 123 is symmetrical. In the reference processing hole 120a, the inclination angle of the inner surface 123 may be symmetrical as shown in FIG. 3b, and may be inclined as shown, but may be formed at a right angle (or vertical). For example, the reference processing hole 120a may be a processing hole 120 aligned with the evaporation source 210, and the deposition material is vertically (or in a straight line) from the evaporation source 210 to the reference processing hole 120a. may be incident, and in this case, the inner surface 123 of the reference processing hole 120a may have an inclination angle of a right angle (90°). On the other hand, in the reference processing hole 120a, as shown in FIGS. 2 and 3B , the inclination angle TA1 of the left inner surface 123 and the inclination angle TA2 of the right inner surface 123 are the same (TA1 = TA2). can

In this case, the asymmetric processing hole 120b may be the remaining processing hole 120 excluding the reference processing hole 120a among the plurality of processing holes 120 . The asymmetric processing hole 120b may have an asymmetrical angle of inclination of the inner surface 123 as shown in FIGS. 3A and 3C . For example, as shown in FIG. 3A , the asymmetric processing hole 120b on the left side of the reference processing hole 120a has an inner surface 123 on the side close to the reference processing hole 120a on the side far from the reference processing hole 120a. It can be gentler than the inner surface 123, and as shown in FIG. 3c, the asymmetric processing hole 120b on the right side of the reference processing hole 120a is also the inner surface 123 on the side close to the reference processing hole 120a is the reference processing hole It may be gentler than the inner surface 123 on the side farther from 120a. In this case, the asymmetric processing hole 120b on the left side of the reference processing hole 120a and the asymmetric processing hole 120b on the right side of the reference processing hole 120a may form symmetry around the reference processing hole 120a. Here, in the asymmetric processing hole 120b on the left side of the reference processing hole 120a, the inclination angle TA1' of the left inner surface 123 far from the reference processing hole 120a is the reference processing as shown in FIGS. 2 and 3a. The inclination angle TA2 of the right inner surface 123 close to the hole 120a and/or the inclination angle TA1 of the left inner surface 123 of the reference processing hole 120a may be greater (TA1' > TA2 = TA1). . In addition, as shown in FIGS. 2 and 3c , in the asymmetric processing hole 120b on the right side of the reference processing hole 120a, the inclination angle TA2 ′ of the right inner surface 123 far from the reference processing hole 120a is the reference processing hole. It may be greater than the inclination angle TA1 of the left inner surface 123 close to 120a and/or the inclination angle TA2 of the right inner surface 123 of the reference processing hole 120a (TA2'>TA1=TA2).

Figure 4 is a conceptual view for explaining the difference in the inner surface inclination angle according to the position of the reference processing hole and the asymmetric processing hole according to an embodiment of the present invention, Figure 4 (a) is a cross-sectional view of the reference processing hole and the asymmetric processing hole for each location and includes a cross-sectional view of the metal sheet 110 cut along BB' and a cross-sectional view of the metal sheet 110 cut along CC', and FIG.

Referring to FIG. 4 , the first open part 121 may have a larger area than the second open part 122 , and each of the second open parts 122 may be arranged at regular intervals. Here, since the first open portion 121 is a portion through which the deposition material enters the processing hole 120 from the evaporation source 210 , the second open portion 122 is a portion from which the deposition material is discharged in the processing hole 120 . ) can have a larger area. That is, when the evaporation source 210 performs spot injection or line injection, it is generated due to the injection angle (degrees) of the deposition material injected from the evaporation source 210 according to the difference in distance from the evaporation source 210 . The inner surface 123 of the processing hole 120 may be inclined (or tapered) in order to prevent or suppress the shadow phenomenon, and the deposition material into the processing hole 120 through the first open portion 121 . The area of the first open part 121 may be widened to facilitate the entry of ) can be kept constant. Accordingly, the first open part 121 may have a larger area than the second open part 122 .

Each of the second openings 122 may be arranged at regular intervals, and the deposition material may be uniformly discharged at a plurality of points (or positions) at regular intervals, and uniform deposition may be achieved. That is, the plurality of second open parts 122 may be arranged at regular intervals so that the portions or locations (or points) from which the deposition material is discharged may be uniformly provided at regular intervals.

Here, the second open portion 122 of the reference processing hole 120a may be located at the center of the first open portion 121 of the reference processing hole 120a, and the second open portion of the asymmetric processing hole 120b. 122 may be located away from the center of the first open portion 121 of the asymmetric processing hole (120b). The reference processing hole (120a) is the second open portion 122 of the reference processing hole (120a) so that the inclination angle of the inner surface 123 is symmetrically formed of the first open portion 121 of the reference processing hole (120a). can be centered. That is, the reference processing hole 120a has the first open portion 121 and the second open portion 122 having the same center, so that the inner surface 123 may be symmetrical.

The asymmetric processing hole (120b) is the second open portion 122 of the asymmetric processing hole (120b) so that the inclination angle of the inner surface 123 is formed asymmetrically of the first open portion 121 of the asymmetric processing hole (120b). It can be positioned off-center. That is, the asymmetric processing hole 120b has a first open portion 121 and a second open portion 122 having different centers so that the inner surface 123 may be asymmetrical.

Here, each of the plurality of processing holes 120 may have the same area as the first open portion 121 . The area of the first open part 121 of the plurality of processing holes 120 is made the same, and only the position of the second open part 122 is moved from the center of the first open part 121 to the inner surface 123 . It is possible to form an asymmetric processing hole (120b) making this asymmetry. In this case, the areas of the second open portions 122 of the plurality of processing holes 120 may all be the same so that the amount of the deposition material discharged through the second open portions 122 may be constant. That is, by changing only the position of the second open part 122 in the plurality of processing holes 120 in which the areas of the first open part 121 and the second open part 122 are all the same, the inner surface 123 is asymmetrical. A processing hole 120 (ie, the asymmetric processing hole) may be formed.

In addition, the distance between the center of the first open part 121 and the center of the second open part 122 may be determined in each of the asymmetric processing holes 120b in proportion to the distance from the reference processing hole 120a. For example, as the distance from the reference processing hole 120a increases, the distance from the evaporation source 210 aligned with the reference processing hole 120a increases as the distance between the reference processing hole 120a and the reference processing hole 120a increases. spread and sprayed), and thus the inner surface 123 on the side closer to the reference processing hole 120a is asymmetric processing hole 120b that is far from the reference processing hole 120a in order to prevent or suppress the occurrence of a shadow ), the angle of inclination may become smaller. In this case, the inner surface 123 on the far side from the reference processing hole 120a may have a relatively large inclination angle to secure the rigidity of the metal mask 100 . In this case, as the distance from the reference processing hole 120a increases, the center of the second open portion 122 may be closer to the side farther from the reference processing hole 120a, and the center of the first open portion 121 increases. The distance between the center of the second open part 122 and the second open part 122 may increase.

Meanwhile, the asymmetric processing hole 120b may have a different area from the reference processing hole 120a. That is, the area of the first open portion 121 of the asymmetric processing hole 120b may be different from the area of the first open portion 121 of the reference processing hole 120a, and the area of each of the asymmetric processing holes 120b may be determined according to a distance from the reference processing hole 120a. When the area of the first open part 121 and the second open part 122 is the same in all of the plurality of processing holes 120 , the first open part is maintained in a state where the distance between the plurality of second open parts 122 is kept constant. The position of the part 121 should be moved so that the center of the second open part 122 is deviated from the center of the first open part 121 , and in the case of the metal mask 100 for a high-resolution panel, the second open part ( Since the interval between the 122 ) is inevitably dense, the first open portions 121 may overlap each other with the adjacent processing holes 120 , and accordingly, the length of the inner surface 123 may be shortened or the thickness of the metal mask 100 may be reduced. (ie, the thickness of the metal sheet) may not sufficiently secure the rigidity of the metal mask 100 such as thinning.

However, when the asymmetric processing hole 120b has an area different from that of the reference processing hole 120a, the volume (or area) processed in the metal sheet 110 is reduced so that after the plurality of processing holes 120 are formed, the metal sheet ( The volume of 110 , that is, the volume of the metal mask, can be sufficiently secured, and overlapping of the first open parts 121 with the adjacent processing holes 120 can be prevented or suppressed. Accordingly, it is possible to more effectively secure the rigidity of the metal mask 100 .

In addition, the area of each of the asymmetric processing holes 120b may be determined according to a distance from the reference processing hole 120a, and the area may become smaller or larger as the distance from the reference processing hole 120a increases. For example, the inner surface 123 on the side closer to the reference processing hole 120a of all asymmetric processing holes 120b has the same inclination angle, and the more the asymmetric processing hole 120b farther from the reference processing hole 120a, the more the reference processing hole In the case of increasing the inclination angle of the inner surface 123 on the far side from 120a, the area of the asymmetric processing hole 120b (that is, the area of the first open portion of the asymmetric processing hole) increases as the distance from the reference processing hole 120a increases. may become smaller. And in the state where the inner surface 123 on the far side from the reference processing hole 120a of all asymmetric processing holes 120b is fixed at the same inclination angle, the more the asymmetric processing hole 120b far from the reference processing hole 120a, the more the reference processing hole ( When the inclination angle of the inner surface 123 on the side close to 120a is reduced (or the inner surface is made gentle), the area of the asymmetric processing hole 120b may gradually increase as the distance from the reference processing hole 120a increases. Here, in a state in which the inner surface 123 of the reference processing hole 120a and the inner surface 123 on the far side from the reference processing hole 120a of all asymmetric processing holes 120b are fixed at a right angle (or vertical), the reference The volume of the metal mask 100 can be maximized when the inclination angle of the inner surface 123 on the side closer to the reference processing hole 120a is decreased as the asymmetric processing hole 120b is farther from the processing hole 120a. The rigidity of the metal mask 100 may be maximized.

In other words, each of the asymmetric processing holes 120b may decrease the inclination angle of the inner surface 123 on the side closer to the reference processing hole 120a as the distance from the reference processing hole 120a is reduced, and in the reference processing hole 120a The inclination angle of the inner surface 123 on the far side may be greater than the inclination angle of the side close to the reference processing hole 120a. Each of the asymmetric processing holes 120b increases the distance between the reference processing hole 120a and the evaporation source 210 aligned with the reference processing hole 120a as the distance from the reference processing hole 120a increases, so that the deposition angle of the deposition material may increase. According to the injection angle of (or as the injection angle of the deposition material increases), the inclination angle of the inner surface 123 on the side closer to the reference processing hole 120a is reduced (or the inclination is made gentle) to prevent or suppress the occurrence of shadows. can do. And the inclination angle of the inner surface 123 on the far side from the reference processing hole 120a can be made larger than the inclination angle on the side close to the reference processing hole 120a, and accordingly, the inner surface 123 of the asymmetric processing hole 120b. This asymmetrical inclination can be made, and the rigidity of the metal mask 100 can be secured by increasing the volume of the metal mask 100 .

Hereinafter, a metal mask according to another embodiment of the present invention will be described in more detail, and details overlapping with those described above with respect to the metal mask according to an embodiment of the present invention will be omitted.

A metal mask 100 according to another embodiment of the present invention includes a metal sheet 110; and a reference processing hole 120a, and a plurality of processing holes 120 formed in the metal sheet 110; may include.

The metal sheet 110 may be a metal sheet used for a fine metal mask (FMM), may be made of a metal material, and may be processed with a laser. For example, the metal sheet 110 may be made of a metal called INVAR, which is an alloy having a very small coefficient of thermal expansion by adding 36% of nickel (Ni) to 64% of iron (Fe). Or, it is used in machines that cause errors when the dimensions change due to temperature changes, such as parts of optical machines and parts of watches.

The plurality of processing holes 120 may be formed in the metal sheet 110, may be formed regularly, and may be processed by irradiation of a laser beam.

Here, the plurality of processing holes 120 may include a reference processing hole (120a). In the reference processing hole 120a, the inclination angle of the inner surface 123 may be symmetrical, may be inclined, or may be formed at a right angle. For example, the reference processing hole 120a may be a processing hole 120 aligned with the evaporation source 210, and the deposition material may be incident on the reference processing hole 120a vertically from the evaporation source 210, In this case, the inner surface 123 of the reference processing hole 120a may have an inclination angle of a right angle (90°).

Each of the plurality of processing holes 120 includes a first open portion 121 provided on the first surface 111 of the metal sheet 110 ; a second opening portion 122 provided on a second surface 112 opposite to the first surface 111 of the metal sheet 110; and an inner surface 123 connecting the first open part 121 and the second open part 122 . The first open portion 121 may be provided on the first surface 111 of the metal sheet 110 and may communicate with the opposing second open portion 122 .

The second open portion 122 may be provided on the second surface 112 opposite to the first surface 111 of the metal sheet 110 and may communicate with the opposite first open portion 121 .

For example, the first surface 111 of the metal sheet 110 may be a surface on which a laser beam is irradiated to start processing, and the second open part 122 is processed from the first surface 111 by the laser beam. This may be a portion formed on the second surface 112 of the metal sheet 110 while the laser beam penetrates the metal sheet 110 . In addition, the first open part 121 may be a portion through which the deposition material enters the processing hole 120 from the evaporation source 210 , and the second open part 122 is a portion in which the deposition material enters the processing hole 120 . It may be a discharged part.

The inner surface 123 may connect the first open part 121 and the second open part 122 , and the center position and/or the size difference between the first open part 121 and the second open part 122 . Accordingly, the inclination angle may be determined. Here, the inner surface 123 may connect the first surface 111 and the second surface 112 of the metal sheet 110 to induce the flow of the deposition material in the processing hole 120 .

In addition, at least one side of the inner side surface 123 of the other processing hole 120 among the plurality of processing holes 120 may be inclined at a different angle from the same side inner surface 123 of the reference processing hole 120a. That is, the remaining processing holes 120 may be formed to have the inner surface 123 of an inclination angle different from the inner surface 123 of the reference processing hole 120a, and the plurality of inclination angles of the inner surface 123 are individually controlled. of the processing hole 120 may be formed. In this case, the remaining processing hole 120 may be an asymmetric processing hole 120b in which the inner surface 123 is asymmetrically inclined. Accordingly, only the inclination angle of the inner surface 123 on the side close to the reference processing hole 120a of the remaining processing hole 120 that affects the shadow generation is adjusted to prevent shadow generation due to the difference in distance from the evaporation source 210 or The rigidity of the metal mask 100 may be secured by reducing the volume to be processed while being suppressed.

5 is a schematic cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.

A substrate processing apparatus according to another embodiment of the present invention will be described in more detail with reference to FIG. 5 , but items overlapping with those described above in relation to a metal mask according to an embodiment or another embodiment of the present invention will be omitted. let it do

A substrate processing apparatus 200 according to another embodiment of the present invention includes a metal mask 100 according to an embodiment or another embodiment of the present invention; and an evaporation source 210 provided aligned with the reference processing hole 120a.

The metal mask 100 may be a metal mask 100 according to an embodiment or another embodiment of the present invention, and may include a reference processing hole 120a among the plurality of processing holes 120 . Here, the first surface 111 of the metal mask 100 may be a surface facing the evaporation source 210 , and the second surface 112 of the metal mask 100 is sprayed (or evaporated) from the evaporation source 210 . It may be a surface facing the substrate (not shown) on which the deposition material is deposited. In this case, the first open portion 121 provided on the first surface 111 may be a portion through which the deposition material enters the processing hole 120 from the evaporation source 210 , and is formed on the second surface 112 . The provided second open part 122 may be a portion in which the deposition material is discharged to the substrate (not shown) in the processing hole 120 .

The evaporation source 210 may be provided in alignment with the reference processing hole 120a, and the remaining processing hole or asymmetric processing hole 120b is the inner surface ( 123) can be adjusted. For example, the inclination angle of the inner surface 123 on the side closer to the evaporation source 210 may be smaller as the remaining machining holes or asymmetric machining holes 120b far from the evaporation source 210 are. Here, the evaporation source 210 may spray an organic material as the deposition material, and may be used in a vacuum deposition process. For example, it can be used to deposit multiple layers of organic materials in the production of Active Matrix Organic Light-Emitting Diode (AMOLED), and different organic materials for each RGB (Red, Green, Blue) pixel are used. can be deposited.

The substrate processing apparatus 200 according to the present invention may be a deposition apparatus used in a vacuum deposition process for manufacturing an active organic light emitting diode (AMOLED) by depositing different organic materials for each RGB pixel.

On the other hand, the substrate processing apparatus 200 of the present invention includes an irradiating unit (or injecting unit) that irradiates (or injects) a point such as an ion beam or an electron beam instead of the evaporation source 210; /or it may be a deposition apparatus.

6 is a flowchart illustrating a method of manufacturing a metal mask according to another embodiment of the present invention.

A method of manufacturing a metal mask according to another embodiment of the present invention will be described in more detail with reference to FIG. 6 , wherein a metal mask according to an embodiment or another embodiment of the present invention and a substrate processing according to another embodiment of the present invention Items that overlap with those previously described in relation to the device will be omitted.

A method of manufacturing a metal mask according to another embodiment of the present invention includes the steps of setting a plurality of processing regions 12 on a metal sheet 110 (S100); and forming a processing hole 120 by irradiating the laser beam 10 to the plurality of processing regions 12 ( S200 ).

First, a plurality of processing regions 12 are set on the metal sheet 110 ( S100 ). An area to be machined for forming the machining hole 120 may be set as the machining area 12 , and a plurality of machining areas 12 spaced apart from each other may be set.

Next, the laser beam 10 is irradiated to the plurality of processing regions 12 to form processing holes 120 ( S200 ). The plurality of processing regions 12 may be irradiated with a laser beam 10 to form a processing hole 120 , and even a small amount of laser beam 10 may be irradiated to the plurality of processing regions 12 to form a plurality of processing regions. (12) can be machined in any way.

The process (S200) of forming the processing hole 120 is performed in at least one processing region ( 12b) to form the asymmetric processing hole 120b (S210).

The asymmetric processing hole 120b may be formed by processing at least one processing region 12b among the plurality of processing regions 12 so that the energy accumulation distribution by the laser beam 10 in the processing region 12 becomes asymmetric. (S210). The inner surface 123 of at least one machining hole 120 among the plurality of machining holes 120 by machining at least one machining area 12b of the plurality of machining areas 12 so that the energy accumulation distribution is asymmetrical. This may be asymmetrically inclined, and the metal mask 100 including the asymmetric processing hole 120b having the inner surface 123 inclined asymmetrically may be manufactured. Through this, the asymmetric processing hole 120b, in which the at least one processing region 12b is machined, has an inner surface 123 on either side that can prevent or suppress the occurrence of shadows due to the difference in distance from the evaporation source 210. It may have a gentle inclination angle, and the inner surface 123 of the side not involved in shadow generation has a relatively sharp inclination, so that the volume of the metal mask 100 may increase, and accordingly, the rigidity of the metal mask 100 may be increased. can be secured.

The method for manufacturing a metal mask according to the present invention may further include a step of determining a reference processing region 12a among the plurality of processing regions 12 ( S150 ).

A reference machining area 12a among the plurality of machining areas 12 may be determined (S150). The reference processing region 12a is a region (in which the reference processing hole 120a) described above with respect to the metal mask according to an embodiment or another embodiment of the present invention and the substrate processing apparatus according to another embodiment of the present invention is formed. or location). By determining the reference processing region 12a among the plurality of processing regions 12, a position to form the reference processing hole 120a can be determined, and the remaining processing region 12 can be used to form the asymmetric processing hole 120b. location can be determined. That is, the at least one processing region 12b may be the remaining processing region 12 excluding the reference processing region 12a among the plurality of processing regions 12 , and an inner surface of the plurality of processing regions 12 to form the asymmetric processing hole 120b. It may be an asymmetric processing region 12 for processing 123 asymmetrically. In this case, the number of the reference processing regions 12a may be less than the number of the remaining processing regions 12 among the plurality of processing regions 12 . That is, the asymmetric processing hole 120b may be formed more than the reference processing hole 120a. The asymmetric processing hole 120b may be disposed at least on both sides of the reference processing hole 120a, and accordingly, the remaining processing area 12 may be larger than the reference processing area 12a. Here, the evaporation source 210 aligned with the reference processing hole 120a may spray the deposition material point or line, when the asymmetric processing hole 120b is symmetrically disposed on both sides of the reference processing hole 120a. In this case, the deposition material can be efficiently used for deposition without unnecessary waste of the deposition material.

In the process of forming the processing hole 120 ( S200 ), the reference processing region 12a selected from the plurality of processing regions 12 so that the energy accumulation distribution by the laser beam 10 in the processing region 12 is symmetrical. ) to form a reference processing hole 120a (S220) may be further included.

The reference processing region 12a selected (or determined) from among the plurality of processing regions 12 is processed so that the energy accumulation distribution by the laser beam 10 in the processing region 12 is symmetrical, and the reference processing hole 120a ) can be formed (S220). The reference processing region 12a may be processed so that the energy accumulation distribution by the laser beam 10 is symmetrical, and the reference processing hole 120a in which the inclination angle of the inner surface 123 is symmetrical may be formed. Since the reference processing hole 120a is aligned with the evaporation source 210, the reference processing hole ( The inclination angle of the inner surface 123 of 120a) may be symmetrically formed. In order to effectively induce the flow of the deposition material through the reference processing hole 120a, the reference processing hole 120a in which the inclination angle of the inner surface 123 is symmetrical may be formed, and for this purpose, the reference processing area 12a can be processed so that the energy accumulation distribution by the laser beam 10 is symmetrical.

Meanwhile, the asymmetric machining hole 120b may be machined in the remaining machining area 12 among the plurality of machining areas 12 . The remaining processing region 12 may be processed so that the energy accumulation distribution by the laser beam 10 becomes asymmetric, and an asymmetric processing hole 120b in which the inclination angle of the inner surface 123 is asymmetric may be formed. For example, in the remaining machining area 12 on the left side of the reference machining area 12a, the inner surface 123 on the side closer to the standard machining area 12a is the inner surface 123 on the far side from the standard machining hole 120a. It is possible to form the asymmetric processing hole 120b more gently, and the inner surface 123 on the side close to the reference processing area 12a is the reference processing area ( 12a), it is possible to form an asymmetric processing hole (120b) more gently than the inner surface 123 on the far side. In this case, the asymmetric processing hole 120b formed on the left side of the reference processing area 12a and the asymmetric processing hole 120b formed on the right side of the reference processing area 12a may be symmetrical with respect to the reference processing area 12a.

Here, in order to prevent or suppress the occurrence of shadows, the inclination angle of the inner surface 123 on the side closer to the reference machining area 12a can be machined smaller as the remaining machining area 12 farther from the standard machining area 12a becomes smaller. The rigidity of the metal mask 100 may be secured by processing the inclination angle of the inner surface 123 on the far side from the region 12a to be relatively large.

Each of the plurality of processing areas 12 includes a first open area of the first surface 111 to which the laser beam 10 is irradiated, and a second surface of the second surface 112 opposite to the first surface 111 . It may include an open area.

The first open area may be provided on the first surface 111 to which the laser beam 10 is irradiated, and is an area in which the first open portion 121 communicating with the opposing second open portion 122 is formed. can

The second open area may be provided on the second surface 112 opposite to the first surface 111 , and a second open portion 122 communicating with the first open portion 121 is formed. can be

For example, the first surface 111 of the metal sheet 110 may be a surface on which a laser beam is irradiated to start processing, and the second open area starts processing from the first surface 111 by the laser beam. This may be a region in which the second open portion 122 is formed on the second surface 112 of the metal sheet 110 while the laser beam passes through the metal sheet 110 . In this case, the first open part 121 may be a portion through which the deposition material enters the processing hole 120 from the evaporation source 210 , and the second open part 122 may include the deposition material in the processing hole 120 . This may be a discharged portion.

The second open area may be located at the center of the first open area in the reference processing area 12a, and may be located outside the center of the first open area in the at least one processing area 12b. . The reference machining area 12a is to position the second open area of the reference machining area 12a at the center of the first open area of the reference machining area 12a so that the inclination angle of the inner surface 123 is symmetrically formed. can That is, the reference processing area 12a may form the reference processing hole 120a in which the inner surface 123 is symmetrical by setting the first open area and the second open area having the same center.

The at least one processing region 12b is formed by forming the second open region of the at least one processing region 12b in the at least one processing region 12b such that the inclination angle of the inner surface 123 is asymmetrically formed. The first open area may be positioned off-center. That is, the at least one processing region 12b may form the asymmetric processing hole 120b in which the inner surface 123 is asymmetric by setting the first open region and the second open region having different centers.

The at least one processing region 12b may have a different area from the reference processing region 12a. An area of the at least one processing region 12b may be different from an area of the reference processing region 12a, and each of the at least one processing region 12b is different according to a distance from the reference processing region 12a. can have an area.

When the areas of the first open area and the second open area are the same in all of the plurality of processing areas 12 , the position of the first open area is moved while the distance between the plurality of second open areas is kept constant. Thus, the center of the second open area should be deviated from the center of the first open area, and in the case of the metal mask 100 for a high-resolution panel, since the gap between the second open areas is inevitably dense, adjacent processing holes The first open portions 121 may be overlapped with each other 120 , and accordingly, the length of the inner surface 123 may be shortened or the thickness of the metal sheet 110 may be thinned, thereby ensuring sufficient rigidity of the metal mask 100 . may not be able to

However, when the at least one processing region 12b has an area different from that of the reference processing region 12a, the volume (or area) processed in the metal sheet 110 is reduced and a plurality of processing holes 120 are formed. Afterwards, the volume of the metal sheet 110 can be sufficiently secured, and it is also possible to prevent or suppress the overlapping of the first open portions 121 between the adjacent processing holes 120 . Accordingly, it is possible to more effectively secure the rigidity of the metal mask 100 .

At this time, the area of the at least one processing region 12b may be determined according to the distance from the reference processing region 12a, and the area may become smaller or larger as the distance from the reference processing area 12a increases. have. For example, the inner surface 123 on the side closer to the reference processing hole 120a of all asymmetric processing holes 120b has the same inclination angle, and the more the asymmetric processing hole 120b far from the reference processing hole 120a, the more the reference processing hole In the case of increasing the inclination angle of the inner surface 123 on the far side from 120a, the area of the at least one processing region 12b (ie, the area of the at least one processing region) as the distance from the reference processing region 12a increases. The area of the first open region) may gradually decrease. And in the state where the inner surface 123 on the far side from the reference processing hole 120a of all asymmetric processing holes 120b is fixed at the same inclination angle, the more the asymmetric processing hole 120b far from the reference processing hole 120a, the more the reference processing hole ( When the inclination angle of the inner surface 123 on the side closer to 120a is decreased, the area of the at least one processing region 12b may gradually increase as it moves away from the reference processing region 12a. Here, in a state in which the inner surface 123 of the reference processing hole 120a and the inner surface 123 on the far side from the reference processing hole 120a of all asymmetric processing holes 120b are fixed at a right angle, the reference processing hole 120a When the inclination angle of the inner surface 123 on the side closer to the reference processing hole 120a is reduced as the asymmetric processing hole 120b is farther from the reference processing hole 120a, the volume of the metal mask 100 can be maximized, and accordingly, the metal mask 100 stiffness can be maximized.

7 is a conceptual diagram for explaining a method of processing by irradiating a laser beam a plurality of times in a processing area in different areas according to another embodiment of the present invention, FIG. 7(b) shows the machining method of the standard machining area, FIG. 7(c) shows the machining method of the machining area on the right side of the standard machining area, and FIG. 8 is a method according to another embodiment of the present invention. It is a conceptual diagram for explaining a method of changing the inclination angle of the inner surface of the machining hole by changing the energy accumulation distribution of the machining area as the laser beam is irradiated multiple times into the machining area with different areas and processed.

7 and 8, the process of forming the processing hole (S200) includes the process of first irradiating the laser beam 10 at least partially to each of the plurality of processing regions 12 (S215); And it may include a process (S216) of irradiating the laser beam 10 to a region different from the region of the primary irradiation within each processing region 12 (S216).

Each of the plurality of processing regions 12 may be at least partially irradiated with the laser beam 10 ( S215 ). In the primary irradiation, the laser beam 10 may be irradiated to the entirety of each of the plurality of processing regions 12 , and the laser beam 10 may be irradiated to only a portion of each of the plurality of processing regions 12 . have.

In addition, the laser beam 10 may be secondarily irradiated to a region having a different area from that of the primary irradiation within each of the processing regions 12 ( S216 ). In the secondary irradiation, the laser beam 10 may be irradiated to a region having a different area from that of the primary irradiation, and the laser beam 10 is applied to the entirety of each of the plurality of processing regions 12 in the primary irradiation. When irradiated, the laser beam 10 may be secondarily irradiated to an area having an area smaller than the area of the primary irradiation, and the laser beam 10 may be irradiated to only a portion of each of the plurality of processing areas 12 in the primary irradiation. ), the laser beam 10 may be secondarily irradiated to an area having a larger area than the area of the first irradiation.

Here, in the reference processing region 12a, the laser beam 10 can be irradiated a plurality of times (that is, n-th) by making only the area of the primary irradiation area and the area of the secondary irradiation different, and the at least In one processing region 12b, the laser beam 10 may be irradiated a plurality of times (that is, n-th) by differentiating not only the area of the primary irradiation region and the secondary irradiation region, but also the central position. . That is, the laser beam 10 may be secondarily irradiated to an area having a different center position and area from the area of the first irradiation within each of the at least one processing area 12b.

The number of times (n) of irradiating the laser beam 10 is sufficient, and is not particularly limited, as long as it is two or more, and at least the area of the irradiation area is gradually decreased or gradually increased to make a processing hole having an inclined inner surface 123 . (120) can be formed. For example, the reference processing area 12a is 1 for irradiating the laser beam 10 to the same area as the reference processing area 12a in a state where the center position of the irradiation area of each car is fixed as shown in FIG. 7(b). From the first irradiation to the nth irradiation (eg, L1, L2, L3, ..., Ln), the laser beam 10 may be irradiated a plurality of times while gradually decreasing the area of the irradiation area at a certain ratio to be processed. And the at least one processing region 12b on the left side of the reference processing region 12a is n from the first irradiation of irradiating the laser beam 10 to the same area as the reference processing region 12a as shown in FIG. 7(a). The laser beam 10 can be irradiated a plurality of times while gradually decreasing the area of the irradiation area at a constant rate until the secondary irradiation, and the center position of the irradiation area is set at a predetermined interval (or distance) for each vehicle as the reference processing area 12a. ) can be processed while moving away from it. In addition, from the primary irradiation of irradiating the laser beam 10 to the same area as the reference processing area 12a as shown in FIG. 7(c) in the at least one processing area 12b on the right side of the reference processing area 12a The laser beam 10 can be irradiated a plurality of times while gradually decreasing the area of the irradiation area at a constant rate until the n-th irradiation, and the center position of the irradiation area is moved away from the reference processing area 12a by a predetermined interval for each vehicle. It can be machined while moving.

9 is a conceptual diagram for explaining a method of scanning a laser beam according to another embodiment of the present invention, and FIG. 10 is a process for processing by adjusting a scan pitch of a laser beam within a processing area according to another embodiment of the present invention. As a conceptual diagram for explaining the method, FIG. 10(a) shows the control of the scan pitch, and FIG. 10(b) shows the change in the energy accumulation distribution according to the control of the scan pitch in DD′.

9 and 10 , in the process ( S200 ) of forming the processing hole 120 , a scan line 21 parallel to the long axis of the metal sheet 110 and the metal sheet 110 are formed. It is possible to scan the plurality of processing areas 12 while moving the irradiation position of the laser beam 10 along a scan path 20 including a step line 22 parallel to the minor axis. , the scan pitch of the laser beam 10 may be constant in an area corresponding to the second open area, and the scan pitch of the laser beam 10 may be the second open area in the remaining area within the processing area 12 . It may become smaller as it approaches the area corresponding to the area.

In the process (S200) of forming the processing hole 120, a scan path including a scan line 21 parallel to the long axis of the metal sheet 110 and a step line 22 parallel to the short axis of the metal sheet 110 The plurality of processing regions 12 may be scanned while moving the irradiation position of the laser beam 10 along (20). The scan path 20 may include a scan line 21 parallel to the long axis of the metal sheet 110 and a step line 22 parallel to the short axis of the metal sheet 110 , and any one scan line 21 . ), the irradiation position of the laser beam 10 is moved along the step line 22 as much as the step pitch in which the step line 22 is uniformly divided, so that another scan line 21 can be scanned. have. The scan line 21 may be parallel to the long axis of the metal sheet 110 , and may scan from one side of the scan line 21 to the other (or from the other side to one side). The step line 22 may be parallel to the minor axis of the metal sheet 110 , and after scanning any one scan line 21 , the step line 22 is a step line equal to the step pitch uniformly divided from one side to the other side. The other scan line 21 may be scanned by moving the irradiation position of the laser beam 10 in the other (or one side) direction of the step line 22 along (22).

Here, the first scan line 21 and the second scan line 22 may be scanned in the same direction or may be scanned in opposite directions. That is, the direction of movement of the irradiation position of the laser beam 10 may be set to be opposite, and the n-1 (or odd) scan line 10 and the n th (or even) scan line 10 are in the same direction. Alternatively, the irradiation position of the laser beam 10 may be set to move in the opposite direction, but not limited thereto, and the plurality of scan lines 10 may be set in a specific direction or in the opposite direction, or a combination thereof. can On the other hand, when changing the direction from one scan line 21 to another scan line 21, the step pitch may be formed equal to or smaller than the size of the laser beam 10 of any one scan line 21, A uniform pattern can be processed. That is, when changing the direction from one scan line 21 to another scan line 21, the step pitch may be equal to or smaller than the size of the laser beam 10 of any one scan line 21. have.

In this case, in the process of forming the processing hole 120 ( S200 ), the laser beam 10 may be activated from one boundary of the processing region 12 until reaching another boundary of the processing region 12 . That is, along the scan path 20, while scanning the scan area including all the plurality of machining areas 12 (for example, the entire surface of the metal sheet), the machining area ( 12) or the laser beam 10 can be turned on only in some regions of the processing region 12, and the laser beam 10 is turned off (on) in other regions that do not require processing by the laser beam 10 off) can be turned off. Accordingly, since the laser beam 10 can be irradiated only to the portion of the metal sheet 110 requiring laser processing, the working time for irradiating the laser beam 10 is shortened, thereby reducing the time and cost required for laser processing. And there is an advantage that can form the processing hole 120 in an accurate position.

For example, when one boundary of the processing region 12 is reached in the process of forming the processing hole 120 ( S200 ), the laser beam 10 is emitted until the other boundary of the processing region 12 is reached. It can be turned on (on), and when the other boundary of the processing area 12 is reached, the laser beam 10 can be turned off. This makes it easier to activate the laser beam 10 from one boundary of the processing region 12 to the other boundary of the processing region 12 in the process of forming the processing hole 120 (S200). can

In the process of forming the processing hole 120 ( S200 ), the plurality of processing regions 12 may be processed by scanning the plurality of scan lines 21 . By scanning the plurality of scan lines 21 to scan the entire surface of the metal sheet 110 , the plurality of processing regions 12 may be processed. The scan line 21 may have a scan pitch that is a movement distance of the laser beam 10 per unit time, and the step line 22 may have a step pitch that is an interval between the scan lines 21 . Here, the scan pitch and the step pitch may be less than or equal to the size of the laser beam 10 , and when the scan pitch and the step pitch are larger than the size of the laser beam 10 , processing in the processing area 12 . There will be parts that don't work. For example, when the size of the laser beam 10 is 1 μm, the scan pitch and the step pitch may be adjusted in the range of 0 to 1 μm, and preferably, the scan pitch and the step pitch may be adjusted in the range of 0.1 to 1 μm, and the inclination (or inclination) or inclination angle of the surface to be processed (or the inner surface of the processing hole) may be adjusted by adjusting the scan pitch and/or the step pitch, and the As the scan pitch and/or the step pitch decrease, the inclination of the surface to be machined may increase. At this time, the scan pitch can be adjusted using the moving speed of the laser beam 10 and the pulse frequency (eg, the interval between pulses) of the laser source, and the step pitch can be adjusted by the interval between the scan lines 21 . have.

Meanwhile, the scan pitch may be the same for all scan lines 21 or may be different depending on the positions of the scan lines 21 . In this case, the step pitch may be constant, and may be determined according to the interval between the scan lines 21 . For example, when the size of the laser beam 10 is 1 μm, the step pitch may be fixed to 1 μm, and when the step pitch is fixed to 1 μm and constant, the scan pitch is It may be different depending on the position of the line 21, and through this, it is possible to make it inclined in the step direction even if it does not overlap in the step direction. In addition, the scan pitch may be smaller than the step pitch, and by reducing the scan pitch, an inclined surface closer to a plane than a surface machined in the step direction may be formed on a surface processed in the scan direction.

Here, the overlap rate of the laser beam 10 moving the scan line 21 [overlap rate = {(size of laser beam - scan pitch) / size of laser beam} x 100, scan pitch = v / f, v: the moving speed of the laser beam, f: the pulse frequency of the laser source] can be controlled to set the processing depth (Depth; D) by the laser beam 10 . The setting of the processing depth (D) according to the overlap ratio of the laser beam 10 is the movement speed of the laser beam 10 (or the metal sheet and the laser beam) while fixing the pulse frequency value of the laser source. There is a method of setting the relative speed) differently for each scan line 21 , and a method of setting the pulse frequency value differently for each scan line 21 while the relative speed value of the laser beam 10 is fixed. That is, the overlap rate of the laser beam 10 may be set by controlling the scan pitch according to the size of the laser beam 10 , and the value of the moving speed and pulse frequency of the laser beam 10 at scan pitch = v / f By controlling the overlapping degree of the laser beam 10 for each scan line 21 by adjusting The processing depth (D) can be deepened. At this time, as the moving speed of the laser beam 10 increases, the scan pitch may increase, and as the pulse frequency of the laser source decreases, the scan pitch may increase, and the moving speed of the laser beam 10 is fixed at a constant velocity. could be

Meanwhile, the processing depth D by the laser beam 10 may be set by controlling the overlapping number of the laser beam 10 or the scan path 20 . That is, the processing depth D by the laser beam 10 can be set by controlling the energy accumulation distribution according to how many times the laser beam 10 is moved on the same scan path 20 . Specifically, for each scan path 20 (that is, for each scan line and/or each step line), both the moving speed of the laser beam 10 and the pulse frequency value are fixed (that is, the scan pitch is constant) ), it is also possible to selectively control the number of overlapping scan paths 20 in the scan path 20 in the machining area 12 .

In the area corresponding to the second open area, the scan pitch of the laser beam 10 may be constant, and in the remaining area within the processing area 12 , the scan pitch of the laser beam 10 corresponds to the second open area. It may become smaller as it approaches the area. Through this, energy accumulation for each region by the laser beam 10 may be constant in the region corresponding to the second open region, and energy accumulation for each region by the laser beam 10 in the remaining region within the processing region 12 may be constant. The closer to the area corresponding to the second open area, the larger it may be. In this case, in the remaining area within the machining area 12 , the closer to the area corresponding to the second open area, the deeper the machining depth D, so that the inner surface 123 of the machining hole 120 becomes the machining area 12 . may be inclined in the form of gathering from the edge of the to the second open area, and the second open part 122 may be formed by allowing a constant processing depth D to penetrate the area corresponding to the second open area. . That is, in the region corresponding to the second open region, energy accumulation by the laser beam 10 may be constant for each region to penetrate to form the second open part 122 , and the remaining energy within the processing region 12 may be constant. In the region, the energy accumulation for each region by the laser beam 10 so as to be inclined in a tapered shape may be greater as it approaches the region corresponding to the second open region.

As such, in the present invention, since at least one of the plurality of processing holes has an asymmetrically inclined inner surface, it is possible to prevent or suppress the occurrence of shadows due to the difference in distance from the evaporation source, while also securing rigidity, and a high-resolution panel It is possible to provide a metal mask for a high-resolution panel having sufficient rigidity even for a metal mask for use. In addition, by using a metal mask in which the inclination angle of the inner surface of the processing hole is adjusted according to the difference in distance from the evaporation source in the substrate processing apparatus, shadow generation can be effectively prevented or suppressed, and the inner surface inclination angle of the side not involved in shadow generation can be reduced. By enlarging and increasing the volume of the metal mask, rigidity of the metal mask can be secured. And in the metal mask manufacturing method, by irradiating a laser beam to form a processing hole, it is possible to form a plurality of processing holes in which the inclination angle of the inner surface is individually controlled, and energy accumulation distribution of at least one processing area among the plurality of processing areas can be processed to be asymmetrical, and accordingly, a metal mask capable of securing rigidity while preventing or suppressing shadow generation due to a difference in distance from an evaporation source can be manufactured. At this time, by irradiating the laser beam multiple times in the processing area with different center positions and areas, or by adjusting the scan pitch of the laser beam in the processing area, it is possible to process so that the energy accumulation distribution of the processing area becomes asymmetrical, and It is possible to form a processing hole with asymmetrically inclined side surfaces.

The meaning of “on” used in the above description includes cases in direct contact and cases in which direct contact is not made, but is located opposite to the upper or lower surface, and partially as well as located opposite to the entire upper surface or lower surface. It is also possible to be positioned to face each other, and it is used to mean that they face away from each other or directly contact the upper surface or the lower surface. Thus, “on the metal sheet” may be the surface (top surface or bottom surface) of the metal sheet, or the surface of a film deposited on the surface of the metal sheet.

Although preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and common knowledge in the field to which the present invention pertains without departing from the gist of the present invention as claimed in the claims It will be understood by those having the above that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the technical protection scope of the present invention should be defined by the following claims.

10: laser beam 12: processing area
12a: reference machining area 12b: at least one machining area
20: scan path 21: scan line
22: step line 100: metal mask
110: metal sheet 111: first surface
112: second surface 120: machining hole
120a: standard machining hole 120b: asymmetric machining hole
121: first open part 122: second open part
123: inner surface 200: substrate processing device
210: evaporation source

Claims (14)

metal sheet; and
Including; a plurality of processing holes formed in the metal sheet;
Each of the plurality of machining holes,
a first open portion provided on a first surface of the metal sheet;
a second opening portion provided on a second surface opposite to the first surface of the metal sheet; and
and an inner surface connecting the first open part and the second open part,
The plurality of processing holes is a metal mask including one or more asymmetric processing holes in which the inner surface is asymmetrically inclined. The method according to claim 1,
The plurality of processing holes may further include a reference processing hole in which an inclination angle of the inner surface is symmetrical. 3. The method according to claim 2,
The first open portion has a larger area than the second open portion,
Each of the second open parts is arranged at regular intervals,
The second open portion of the reference processing hole is located at the center of the first open portion of the reference processing hole,
A metal mask in which the second open portion of the asymmetric processing hole is located off the center of the first open portion of the asymmetric processing hole. 4. The method according to claim 3,
Each of the plurality of processing holes has the same area as the first open portion,
A metal mask in which a distance between the center of the first open part and the center of the second open part is determined in each of the asymmetric processing holes in proportion to a distance from the reference processing hole. 4. The method according to claim 3,
An area of the asymmetric processing hole is different from an area of the reference processing hole. 3. The method according to claim 2,
Each of the asymmetric processing holes,
As the distance from the reference processing hole increases, the inclination angle of the inner surface of the side closer to the reference processing hole decreases,
A metal mask in which the inclination angle of the inner surface on the side far from the reference processing hole is greater than the inclination angle of the side close to the reference processing hole. metal sheet; and
Including a reference processing hole, a plurality of processing holes formed in the metal sheet;
Each of the plurality of machining holes,
a first open portion provided on a first surface of the metal sheet;
a second opening portion provided on a second surface opposite to the first surface of the metal sheet; and
and an inner surface connecting the first open part and the second open part,
At least one side of the inner surface of the other machining hole among the plurality of machining holes is inclined at an angle different from the inner side surface of the same side of the reference machining hole. The metal mask of any one of claims 2 to 7; and
Substrate processing apparatus comprising a; evaporation source provided aligned with the reference processing hole. setting a plurality of processing areas on the metal sheet; and
The process of forming a processing hole by irradiating a laser beam to the plurality of processing areas;
The process of forming the machining hole includes forming an asymmetric machining hole by machining at least one machining area among the plurality of machining areas so that the energy accumulation distribution by the laser beam in the machining area becomes asymmetric. Way. 10. The method of claim 9,
The process of forming the machining hole further includes forming a reference machining hole by machining a reference machining area selected from among the plurality of machining areas so that the energy accumulation distribution by the laser beam in the machining area is symmetrical. Way. 11. The method of claim 10,
Each of the plurality of processing areas includes a first open area on a first surface to which the laser beam is irradiated and a second open area on a second surface opposite to the first surface,
The second open region is located at a center of the first open region in the reference processing region, and is located outside the center of the first open region in the at least one processing region. 12. The method of claim 11,
The at least one processing region has an area different from that of the reference processing region. 12. The method of claim 11,
The process of forming the processing hole,
a process of at least partially irradiating the laser beam to each of the plurality of processing areas; and
and secondarily irradiating the laser beam to a region having a different area from that of the primary irradiation in each of the processing regions. 12. The method of claim 11,
In the process of forming the processing hole, the plurality of processing areas while moving the irradiation position of the laser beam along a scan path including a scan line parallel to the long axis of the metal sheet and a step line parallel to the short axis of the metal sheet scan the
In an area corresponding to the second open area, a scan pitch of the laser beam is constant,
In the remaining area within the processing area, the scan pitch of the laser beam becomes smaller as it approaches the area corresponding to the second open area.

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