KR20210086352A - Display Device - Google Patents

Abstract

The present invention relates to a display device which changes a structure between an edge portion of a substrate and a pad connection portion, thereby preventing stress on the substrate.

Description

Display Device {Display Device}

A display device of the present invention relates to a display device in which stress is prevented by changing a structure on a substrate.

Recently, as we enter the information age in earnest, the field of display that visually expresses electrical information signals has developed rapidly, and in response to this, various flat panel display devices with excellent performance such as thinness, light weight, and low power consumption (flat display) have developed rapidly. Display Device) has been developed and is rapidly replacing the existing cathode ray tube (CRT).

Specific examples of the flat panel display include a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), and an organic light emitting display device. (Organic Light Emitting Device: OLED) etc. are mentioned.

Among them, a self-luminous display device such as an organic light emitting display device is considered as a competitive application in order to make the device compact and display vivid colors without requiring a separate light source.

Meanwhile, since the self-luminous display device is implemented without a separate light source, it may be implemented as a flexible, bendable, or foldable display device, and may be designed in various forms.

In addition, a display device attached to a surface having a predetermined curvature requires flexibility in the display panel to reflect the curvature. Accordingly, the display device becomes thinner, and in particular, the use of a plastic film is required for a substrate on which a configuration such as an array is formed.

However, although it is possible to make the plastic film slim and flexible, there is a problem in that it is relatively vulnerable to moisture and the like compared to a glass substrate, and various studies are being conducted to solve this problem.

SUMMARY OF THE INVENTION The present invention is to solve the above problems, and relates to a display device having improved reliability by resolving the problem of floating of the substrate occurring during bonding by changing the structure of the substrate.

The display device of the present invention may include a predetermined accommodating portion between the pad electrode on the substrate and the end of the substrate in the region where the connection is made, so that the anisotropic conductive film can be accommodated when the anisotropic conductive film is spread by heat and pressure during bonding. Accordingly, the anisotropic conductive film does not overflow to the edge line and can be accommodated in the region inside the substrate, thereby preventing the substrate from lifting, which is a problem when the anisotropic conductive film passes the edge line. Accordingly, it is possible to prevent stress generated on the edge line of the substrate.

A display device according to an embodiment of the present invention includes a substrate having an active region and an inactive region, a pad region spaced apart from an edge line by a first interval in a portion of the inactive region, and an inorganic insulation provided on the substrate; A stack, a pad electrode provided on the inorganic insulating stack in the pad region, a circuit film connected to the pad electrode, and within the first gap, are spaced apart from the edge line by a first distance smaller than the first gap It may include an anisotropic conductive film receiving portion provided.

The display device of the present invention has the following effects.

The display device of the present invention includes a predetermined receiving portion between the pad electrode on the substrate and the end of the substrate in the region where the connection is made, so that when the anisotropic conductive film is spread by heat and pressure during bonding, the anisotropic conductive film is formed without overflowing the edge line of the substrate. can be accepted Accordingly, when the anisotropic conductive film passes through the edge line, it is possible to prevent the substrate from floating, which is a problem.

Thereby, it is possible to prevent stress on the substrate, such as a lifting phenomenon that starts at the edge line after scribing of the substrate.

1 is a plan view illustrating a state in which a circuit film is bonded to a substrate of a display device according to a first exemplary embodiment of the present invention;
Figure 2 is a cross-sectional view taken along line I ~ I' of Figure 1;
3 is a plan view illustrating a display panel area corresponding to the circuit film of FIG. 1 before bonding;
4 is a plan view showing the inner surface of the circuit film before bonding;
5 is a detailed cross-sectional view taken along line II-II' of FIG.
6 is a plan view illustrating a display device according to the present invention;
7 is a cross-sectional view taken along line III to Ⅲ' in FIG.
8 is a circuit diagram of a sub-pixel of FIG. 6 ;
9 is a cross-sectional view illustrating a substrate of a display device according to a second exemplary embodiment of the present invention;
10 is a cross-sectional view illustrating a substrate of a display device according to a third exemplary embodiment of the present invention;
11 is a cross-sectional view illustrating a substrate of a display device according to a fourth exemplary embodiment of the present invention;

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Like reference numerals refer to substantially identical elements throughout. In the following description, if it is determined that a detailed description of a technology or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. In addition, the component names used in the following description are selected in consideration of the ease of writing the specification, and may be different from the part names of the actual product.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining various embodiments of the present invention are exemplary, and thus the present invention is not limited to the matters shown in the drawings. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components included in various embodiments of the present invention, even if there is no separate explicit description, it is interpreted as including an error range.

In describing various embodiments of the present invention, in the case of describing the positional relationship, for example, two When the positional relationship of parts is described, one or more other parts may be positioned between the two parts unless 'directly' or 'directly' is used.

In describing various embodiments of the present invention, in the case of describing the temporal relationship, for example, 'after', 'next to', 'after', 'before', etc. When is described, a case that is not continuous unless 'directly' or 'directly' is used may be included.

In describing various embodiments of the present invention, 'first-', 'second-', etc. may be used to describe various components, but these terms are only used to distinguish between the same and similar components. to be. Accordingly, in the present specification, elements modified by 'first to' may be the same as elements modified by 'second to' within the technical spirit of the present invention, unless otherwise specified.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the various embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

1 is a plan view illustrating a state in which a circuit film is bonded to a substrate of a display device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line I to I' of FIG. 1 . 3 is a plan view showing a display panel area corresponding to the circuit film of FIG. 1 before bonding, FIG. 4 is a plan view showing the inner surface of the circuit film before bonding, and FIG. 5 is a detailed cross-sectional view along line II to II' of FIG. 3 .

1 to 5 , the display device according to the first embodiment of the present invention has an active area AA and an inactive area NA, and an edge line SL is formed in a portion of the inactive area NA. ) and a first gap MD, the substrate 100 having a pad region PD, the inorganic insulating stack 1100 provided on the substrate 100, and the inorganic insulating layer in the pad region PD. A first distance ( ) between the pad electrode 150 provided on the stack 1100 , the circuit film 200 connected to the pad electrode 150 , and the edge line SL and the first distance MD d) may include an anisotropic conductive film receiving unit 180 and/or 1650 located in a spaced apart region.

The display device of the present invention is intended to solve the overflow of the anisotropic conductive film material that may occur in the bonding process.

The bonding process may be performed by applying pressure by providing the bonding equipment 400 on the upper side of the circuit film 200 as shown in FIG. 2 , and in this process, heat and pressure are directed from the upper side of the circuit film 200 to the lower side. As a result, the copper foil layer 210 of the circuit film 200 and the anisotropic conductive film layer 220 coated on any one surface of the pad electrode 150 of the substrate 100 are spread in the horizontal direction.

For example, the anisotropic conductive film 220 is coated on the copper foil layer 210 on the inner surface of the circuit film 200 before bonding.

The bonding equipment 400 is horizontally disposed to be spaced apart by a second interval a larger than the first interval MD, and heat and pressure applied in the vertical direction during the bonding process are applied only to the pad electrode 150 . In addition, on the copper foil layer 210 of the circuit film 200 , it may be included on one side of the solder resist 230 so that only a region connected to the pad electrode 150 is exposed.

However, the anisotropic conductive film 200 reacts with heat, and there is an excess anisotropic conductive film material 220A that spreads in the horizontal direction when pressure is applied in the vertical direction to manage it. In the display device of the present invention, the anisotropic conductive film It is provided with a receiving part (180 or 1650).

The bonding equipment 400 may have a first planarization layer pattern 160 covering the edge of the pad electrode 150 and a third gap b in consideration of the spread of the anisotropic conductive film layer due to pressure and heat. . However, it may not be possible to completely separate the anisotropic conductive film from the edge line of the substrate 100 only by disposition of the bonding equipment 400 .

When the 'anisotropic conductive film receiving part' described in this specification is bonded to the pad electrode 150 and the copper foil layer 210 of the circuit film 200, the anisotropic conductive film layer 220 is filled therebetween to make electrical connection. In this process, when heat and pressure are applied, the anisotropic conductive film region 180 to the anisotropic conductive film provided outside the pad electrode 150 so that the material of the spreading anisotropic conductive film does not pass the edge line SL of the substrate 100 . Acceptance pattern 1650 . That is, even if there is an anisotropic conductive film material 220A that is excessively spread by heat and pressure in the bonding process, the anisotropic conductive film is spaced apart from the substrate edge line SL and the first distance d1 in the region within the first gap MD. The accommodating portions 180 and 165 are provided to accommodate the anisotropic conductive film material 220A in excess into the regions of the anisotropic conductive film accommodating portions 180 and 165 .

For electrical connection between the pad electrode 150 on the substrate 100 and the copper foil layer 210 on the inner surface of the circuit film 200 , the circuit film 200 has an area to sufficiently cover the connection area. And, for this, the circuit film 200 may pass through the edge line SL of the substrate while overlapping the first gap MD.

Meanwhile, the edge line SL of the present invention refers to a line cut in units of each panel after the process of forming an array in units of a plurality of panels is performed on the mother substrate, and refers to the end of the substrate in the completed display device. The edge line SL is also referred to as a 'scribe line'.

Here, the anisotropic conductive film receiving region 180 is formed in the form of a recess in the inorganic insulating stack 1000 formed on the substrate 100 as shown in FIG. 2 , and the recessed part is removed from the inorganic insulating stack 1000 . can be done by

The inorganic insulating stack 1000 is a stack of a plurality of inorganic layers, and may include an inorganic buffer 110 , an active buffer 120 , a gate insulating layer 130 , and an interlayer insulating layer 140 , and each layer is the same or the same. It may have more than the number of layers shown including a plurality of heterogeneous layers, or some may be omitted. However, the anisotropic conductive film accommodating region 180 defined by removing the inorganic insulating stack 1000 of the present specification may include all of the insulating layers positioned below the pad electrode 150, and has a plurality of layers, whereby 2000 Å In the above, it may have a thickness of several μm, so that the anisotropic conductive film material can be accommodated.

The inorganic insulating stack 1000 may be formed of, for example, a silicon nitride film (SiNx), a silicon oxide film (SiOx), or a silicon oxynitride film (SiOxNy), and an interlayer insulating film 140 in the active area AA of the substrate 100 . Alternatively, the anisotropic conductive film receiving region 180 may be defined by patterning together in the patterning process of the gate insulating layer 130 .

In addition, the anisotropic conductive film receiving pattern 1650 may be formed of an organic structure, for example, the organic structure may include a planarization layer 165 and a bank 170 .

In addition, the first planarization layer pattern 160 of the same layer as the planarization layer 165 may be provided at the edge of the pad electrode 150 .

The inorganic insulating stack 1000 , the planarization layer 165 , and the bank 170 may include sub-pixels provided in the active region of the substrate 100 .

On the other hand, as the anisotropic conductive film receiving portion, the anisotropic conductive film receiving pattern 1650 has a first distance d1 from the edge line SL of the substrate 100 , which protrudes from the inorganic insulating stack 1000 . This is to prevent damage to the substrate 100 when the process energy for cutting in the scribing process is large due to the organic structure. In addition, as the anisotropic conductive film receiving portion, the anisotropic conductive film receiving region 180 also has at least a first distance d1 to prevent the anisotropic conductive film material filled with heat and pressure through the bonding process from being exposed to the edge line. to be.

In the display device of the present invention, the anisotropic conductive film accommodating part 180 or 1650 is provided outside the pad region among the inactive regions of the substrate 100 , and the anisotropic conductive film selectively overlaps with the circuit film 200 only. Even having the film accommodating part 180 or 1650 may have the accommodating effect of the anisotropic conductive film material. In this case, the anisotropic conductive film accommodating part 180 or 1650 may be provided in a rectangular shape along the longitudinal direction (horizontal direction in FIG. 2 ) of the circuit film 200 . However, the present invention is not limited thereto, and may have various shapes other than a rectangle, and may be implemented in the form of a recess in the inorganic insulating stack 1000 or a convex part on the inorganic insulating stack 100 , respectively. In some cases, the anisotropic conductive film receiving region 180 may extend to a region that does not overlap the circuit film 200 .

The display device according to the first embodiment of the present invention has shown an example in which the anisotropic conductive film receiving region 180 and the anisotropic conductive film receiving pattern 1650 are formed together, but the present invention is not limited thereto. It may be provided with only a form. This will be described later. In addition, the more effective the anisotropic conductive film accommodating region 180 is provided, the more effective the anisotropic conductive film accommodating pattern 1650 is at least the edge of the region where the substrate 100 and the circuit film 200 overlap, that is, the substrate. The closer to the edge line of (100), the more effective in terms of preventing the anisotropic conductive film material from overflowing.

In addition, when the solder resist 230 provided on the circuit film 200 is provided, it may meet the anisotropic conductive film receiving pattern 1650 , and the reception effect of the anisotropic conductive film material 220A may be improved. Here, the solder resist 230 overlaps the substrate 100 by a fourth gap c smaller than the first gap MD within the first gap MD so as not to affect the connection of the pad electrode 150 . can do. However, the solder resist 230 may be omitted in some cases.

Meanwhile, the number of the pad electrodes 150 may vary depending on the number of first and second wires provided in the active area AA of the substrate 100 , and a plurality of pad electrodes 150 may be provided.

A copper foil layer 210 is provided on the circuit film 200 to provide a connection region with the pad electrode 150 , and the copper foil layer 210 is the pad electrode when the substrate 100 is provided with a plurality of pad electrodes. It may be patterned corresponding to the number of . In addition, in the anisotropic conductive film 220, conductive balls are included in the resin, and the conductive balls are broken by heat and pressure of the bonding process, and can be connected to the copper foil layer 210 and the pad electrode 150 located at the top and bottom. have.

In some cases, as shown in FIG. 5 , an inorganic insulating stack removal region 180a from which the inorganic insulating stack 1000 is removed may be further defined, which overlaps on the edge line SL of the substrate 100 . This is to reduce the thickness of the area to be scribing to facilitate the scribing process.

Meanwhile, the substrate 100 described in the display device of the present invention may be made of various materials such as a glass substrate, a plastic substrate, and a metal substrate.

In particular, when the substrate 100 has a structure including a plurality of polymer layers ( 101 and 102 in FIG. 5 ) and an inorganic interlayer insulating film 103 between the polymer layers, the polymer layers 101 and 121 are, for example, For example, it may be in the form of a film including one selected from the group consisting of polyimide-based polymers, polyester-based polymers, silicone-based polymers, acrylic polymers, polyolefin-based polymers, and copolymers thereof. Among these materials, polyimide is widely used as a plastic substrate because it can be applied to high-temperature processes and can be coated. In addition, the inorganic interlayer insulating layer 103 may be formed of, for example, a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), or a silicon oxynitride layer (SiOxNy).

When the anisotropic conductive film receiving region 180 or the anisotropic conductive film receiving pattern 1650 of the present invention is provided, the anisotropic conductive film is formed inside the edge line SL of the substrate 100 even when heat or pressure is applied in the bonding process. can be accepted. When the anisotropic conductive film remains on the edge line SL, this component can expand and contract to push the flexible substrate 100 in the vertical direction, whereby the component is different from the edge line of the substrate 100 . The polymer layers 101 and 102 and the inorganic interlayer insulating film 103 can be separated from each other, which is observed as a substrate lifting phenomenon. The display device of the present invention avoids the edge line SL to accommodate the anisotropic conductive film. , it is possible to prevent substrate lifting.

Meanwhile, reference numeral 300, which is not described, denotes a back plate 300 that protects the lower surface of the substrate 100 .

The configuration of the sub-pixels in the substrate of the display device of the present invention will be described later.

Hereinafter, the structure of the active region of the display device of the present invention formed together with the above-described anisotropic conductive film accommodating portion and the inorganic insulating stack will be described.

6 is a plan view illustrating a display device according to the present invention, FIG. 7 is a cross-sectional view taken along line III to III' of FIG. 6 , and FIG. 8 is a circuit diagram of a sub-pixel of FIG. 6 .

The display device illustrated in FIG. 6 includes a substrate 100 and a driver 1500 for driving each sub-pixel SP provided in the active area AA of the substrate 100 .

The driving unit 150 includes a circuit film 200 and a driving integrated circuit 154 mounted on the circuit film 200 .

The driving integrated circuit 154 generates a driving signal for driving the substrate 100 and supplies it to the substrate 100 through the circuit film 200 .

As described above, the substrate 100 may include a plurality of polymer layers and an inorganic interlayer insulating layer between the polymer layers.

One end of the circuit film 200 is connected to the pad part of the substrate 100 , and the other end is connected to the printed circuit board on which the timing controller and the power supply are mounted. Accordingly, the power voltage generated in the power unit is supplied to the power line 155 of the substrate 100 through the power supply terminal 162 formed on the circuit film 200 . Here, the power supply voltage includes at least one of a reference voltage, a high potential voltage, and a low potential voltage. Meanwhile, although only one power line 155 is illustrated in FIG. 1 , two or more power lines 155 may be formed to respectively supply a plurality of different driving voltages. The power line 155 is disposed on the inside with respect to the dam 106 in the inactive area NA, and the crack detection line 157 parallel to the power line 155 is the dam 106 in the inactive area NA. ) is disposed on the inside, and the crack prevention layer 182 is disposed on the outside of the dam 106 .

The substrate 100 is divided into an active area AA and an inactive area NA disposed around the active area AA.

The active area AA displays an image through unit pixels arranged in a matrix form. The unit pixel is composed of red (R), green (G), and blue (B) sub-pixels SP, or red (R), green (G), blue (B) and white (W) sub-pixels SP is composed of Each of the sub-pixels SP includes a pixel driving circuit and a light emitting device 190 connected to the pixel driving circuit as shown in FIG. 7 . The light emitting device 190 may be an organic light emitting device or an inorganic light emitting device including quantum dots.

The pixel driving circuit includes first and second switching transistors ST1 and ST2 , a driving transistor DT, and a storage capacitor Cst. Here, the configuration of the pixel driving circuit is not limited to the structure of FIG. 7 , and various configurations of the pixel driving circuit may be used.

The storage capacitor Cst is connected between the scan terminal of the driving transistor DT and the low potential voltage EVSS supply line to charge a difference voltage therebetween and supply it as the driving voltage of the driving transistor DT.

The first switching transistor ST1 is turned on under the control of the first scan line SL1 to transfer the data voltage from the data line DL to the gate electrode of the driving transistor DT.

The second switching transistor ST2 is turned on under the control of the second scan line SL2 to transfer the reference voltage from the reference line RL to the source electrode of the driving transistor DT, and in the sensing mode, the driving transistor The current of (DT) may be transferred to the reference line (RL). The first and second switching transistors ST1 and ST2 may be controlled by different scan lines SL1 and SL2 or may be controlled by the same scan line.

The driving transistor DT is switched according to the data signal supplied from the first switching transistor ST1 to control a current flowing from the high potential voltage EVDD supply line to the light emitting device 190 .

As shown in FIG. 3 , the driving thin film transistor DT includes a semiconductor layer 134 disposed on the buffer layer 110 and a gate electrode overlapping the semiconductor layer 134 with the gate insulating layer 130 interposed therebetween. 132 , and source and drain electrodes 136 and 138 formed on the interlayer insulating layer 140 and contacting the semiconductor layer 134 . Here, the semiconductor layer 134 is formed of at least one of an amorphous semiconductor material, a polycrystalline semiconductor material, and an oxide semiconductor material.

The light emitting device 190 is electrically connected between the source terminal of the driving transistor DT and the low potential voltage EVSS supply line, and emits light by a current corresponding to the data signal supplied from the driving transistor DT. To this end, the organic light emitting device 190 includes an anode electrode 191 and a cathode electrode 193 that face each other with the light emitting layer 192 interposed therebetween. The anode electrode 191 is connected to the source electrode 138 of the driving transistor DT exposed through the pixel contact hole penetrating the passivation layer 131 and the planarization layer 161, and a bank ( 170a). The emission layer 192 is formed on the anode electrode 191 and the bank pattern 170a. The light emitting layer 192 may include a hole injection layer/hole transport layer/a light emitting layer/electron transport layer/electron injection layer, and the like. The cathode electrode 193 is formed on the light emitting layer 192 to face the anode electrode 191 with the light emitting layer 192 interposed therebetween.

Accordingly, each of the red (R), green (G), blue (B), and white (W) sub-pixels SP is powered from the high potential power supply EVDD by using the switching of the driving transistor DT according to the data signal. A predetermined color is expressed by emitting light from the light emitting layer of the light emitting device 190 by controlling the magnitude of the current flowing through the light emitting device 190 .

A multi-layered encapsulation unit 250 is disposed on the light emitting device 190 . The encapsulation unit 250 blocks the penetration of external moisture or oxygen into the light emitting device 190 vulnerable to external moisture or oxygen. To this end, the encapsulation unit 250 includes a plurality of inorganic encapsulation layers 252 and 254 and an organic encapsulation layer 253 disposed between the plurality of inorganic encapsulation layers 252 and 254 , and the inorganic encapsulation layer 254 is to be placed on the top floor. In this case, the encapsulation unit 250 includes at least two inorganic encapsulation layers 252 and 254 and at least one organic encapsulation layer 253 . In the present invention, the structure of the encapsulation unit 250 in which the organic encapsulation layer 253 is disposed between the first and second inorganic encapsulation layers 252 and 254 will be described as an example.

The first inorganic encapsulation layer 252 is formed on the cathode electrode 193 to be closest to the light emitting device 190 . The first inorganic encapsulation layer 252 is formed of an inorganic insulating material capable of low-temperature deposition, such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3). Accordingly, since the first inorganic encapsulation layer 252 is deposited in a low-temperature atmosphere, it is possible to prevent damage to the light emitting stack 192, which is vulnerable to a high-temperature atmosphere, during the deposition process of the first inorganic encapsulation layer 252 .

The organic encapsulation layer 253 serves as a buffer to relieve stress between the respective layers due to the bending of the substrate 100 , and enhances planarization performance. The organic encapsulation layer 253 is formed of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC). The organic encapsulation layer 253 may be formed by spreading to the dam 106 , or may be formed by spreading beyond the dam 106 until the inactive area NA in which the signal pad is disposed.

The second inorganic encapsulation layer 254 is formed to cover the top surface and side surfaces of the organic encapsulation layer 253 and the first inorganic encapsulation layer 252 , respectively. That is, the second inorganic encapsulation layer 254 may be formed not only in the active area AA but also in the remaining non-active area NA except for the inactive area NA in which the signal pad is disposed. Accordingly, the second inorganic encapsulation layer 254 minimizes or blocks external moisture or oxygen from penetrating into the first inorganic encapsulation layer 252 and the organic encapsulation layer 253 . The second inorganic encapsulation layer 254 is formed of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

A power line 155 , a dam 106 , a crack detection line 157 , and a crack prevention layer 182 are disposed in the inactive area NA. In the same process as the crack prevention layer 182 , the anisotropic conductive film receiving region 180 of the present invention may be defined outside the pad region PD.

The power line 155 supplies a power voltage including at least one of a reference voltage Vref, a high potential voltage EVDD, and a low potential voltage EVSS. The power line 155 is disposed to surround the remaining active area AA except for one side of the active area AA to which the circuit film 200 is attached. A gate driver (not shown) may be disposed between the power line 155 and the active area AA. The gate driver mainly uses a gate-in-panel (GIP) method embedded in an inactive area (NA; bezel area) of the substrate 100 and is formed in the same process as a thin film transistor disposed in the active area. do.

The dam 106 is disposed to prevent the organic encapsulation layer 253 in liquid form from diffusing into the non-active area NA when the organic encapsulation layer 253 is formed through the inkjet method. Due to the dam 106 , it is possible to prevent the organic encapsulation layer 253 from being diffused toward the signal pad disposed at the outermost portion of the inactive area NA. To this end, as shown in FIG. 6 , the dam 106 is formed to completely surround the active area AA in which the light emitting device 190 is disposed to be formed between the active area AA and the inactive area NA. may be

A plurality of crack prevention layers 182 are formed along the periphery of the active area to prevent cracks generated outside the substrate 100 from propagating to the active area AA. The organic light emitting diode 190 , the transistors ST1 , ST2 , DT , the capacitor Cst , the signal lines SL, DL and RL and the power lines are disposed in the active area AA by the crack prevention layer 182 . (PL) can be prevented from being damaged.

To this end, the crack prevention layers 182 are formed to be spaced apart from each other with the crack prevention hole 180c interposed therebetween. Here, the crack prevention layer 182 is formed using the same material as at least one inorganic insulating layer among the plurality of inorganic insulating layers. For example, the crack prevention layer 182 includes the first crack prevention layer 182a disposed on the buffer layer 110 made of the same material as the gate insulating layer 130 and the first crack prevention layer made of the same material as the interlayer insulating layer 140 ( 182a) and a second crack prevention layer 182b disposed on it.

The plurality of crack prevention layers 182 may be disposed in a straight line or in a zigzag shape. Alternatively, it may be formed in a polygonal structure, a circular structure, or a mixed structure thereof and disposed in a matrix form. In this case, each of the crack prevention layers 182 may be formed in the same shape, or may have different at least one of height, length, width, and shape.

Since the propagation path of cracks generated outside the substrate 100 is lengthened by the crack prevention layer 182 , it is difficult for cracks propagating from the edge of the substrate 100 to propagate into the active area AA. Accordingly, the light emitting device 190 of the active area AA, the circuit components ST1, ST2, DT, and Cst, and the signal lines SL, DL, and RL are prevented from being damaged by cracks generated outside the display panel. can do.

The crack detection line 157 may determine whether or not a crack has propagated without being blocked even by the crack prevention hole 180c and the crack prevention layer 182 because the strength of the crack generated outside the substrate 100 is high. To this end, at least one crack detection line 157 may be disposed between at least one of the crack prevention layer 182 and the crack prevention hole 180c and the dam 106 . The crack detection line 157 is formed to surround at least three sides of the active area AA. The crack detection terminals 164 connected to both ends of the crack detection line 157 are disposed on the circuit film 200 , the printed circuit board, or the inactive area NA as shown in FIG. 1 . The output resistance value of the crack detection line 157 is measured by bringing the resistance measuring unit into contact with the crack detection terminal 164 . When the output resistance value is detected to be infinite, it is determined that a crack is generated in the crack detection line 157 and the crack has propagated to the active area AA. Then, when the output resistance value is detected as an appropriate output resistance value smaller than infinity, it is determined that a crack is not generated in the crack detection line 157 .

As such, the crack detection line 157 may be disposed between the crack prevention layer 182 and the active area AA. Whether the crack propagates to the active region may be determined by measuring the output resistance value of the crack detection line 157 during the inspection process for each unit process or the final inspection.

In the display device of the present invention, when the crack prevention hole 180c is formed between the crack prevention layers 182 in the inactive region, the anisotropic conductive film receiving region 180 can be formed, and the light emitting part of each sub-pixel is defined. When the bank pattern 170a and the planarization layer 161 for planarizing the thin film transistor array therebelow are formed, the anisotropic conductive film receiving pattern 1650 may be formed together on the outside of the pad region PD, so that the anisotropy without increasing the mask It is possible to form a pattern for accommodating the conductive film material.

Therefore, in the display device of the present invention, even if the anisotropic conductive film layer 200 for connecting the pad electrode 150 on the substrate 100 and the copper foil layer 210 of the circuit film 200 overflows due to pressure or heat, it is structurally Therefore, it is possible to prevent it from touching the edge line SL of the substrate 100 , thereby preventing the substrate 100 including the polymer layer from floating.

Hereinafter, a display device according to another embodiment of the present invention will be described.

9 is a cross-sectional view illustrating a substrate of a display device according to a second exemplary embodiment of the present invention.

As shown in FIG. 9 , in the display device according to the second embodiment of the present invention, the inorganic insulating stack is located in a region spaced apart from the edge line of the substrate 100 by a first distance d within the first gap MD outside the pad region. The anisotropic conductive film receiving patterns 1650A and 1650B having a two-layer structure of the planarization layer 165 and the bank 170 are formed on the 1000 .

As described above, the inorganic insulating stack 1000 includes an inorganic buffer 110 , an active buffer layer 120 , a gate insulating layer 130 , and an interlayer insulating layer 140 on the substrate 100 .

A pad electrode 150 is formed on the inorganic insulating stack 1000 in the pad region PD, and a first planarization layer pattern ( 160) is formed.

When the circuit film 200 having the copper foil layer 210 on the upper side of the pad electrode 150 corresponds, and bonding is made by interposing the anisotropic conductive film (refer to 220 in FIG. 2) between the pad electrode 150 and the pad electrode 150, By providing the anisotropic conductive film accommodating patterns 1650A and 1650B, the excess anisotropic conductive film material 220A spread by heat and pressure during bonding may be accommodated.

10 is a cross-sectional view illustrating a substrate of a display device according to a third exemplary embodiment of the present invention.

As shown in FIG. 10 , the substrate 100 of the display device according to the third exemplary embodiment includes a plurality of anisotropic conductive film receiving regions 180 in the inorganic insulating stack 1000 . The anisotropic conductive film receiving region 180 is a first region from an edge line of the substrate 100 within a first gap MD outside the pad region among regions where the circuit film (see 200 of FIG. 2 ) overlaps the substrate 100 . It is provided in the area|region separated by the distance d.

That is, with the above structure, an excess of anisotropic conductive film material (see 220A in FIG. 2 ) into a region spaced a first distance d from the edge line of the substrate 100 within the first gap MD outside the pad region PD. ) can be accommodated.

11 is a cross-sectional view illustrating a substrate of a display device according to a fourth exemplary embodiment of the present invention.

11 , the substrate 100 of the display device according to the fourth exemplary embodiment of the present invention shows that two pairs of the anisotropic conductive film receiving region 180 and the anisotropic conductive film receiving pattern 1650A and 1650B are respectively implemented. That is, with the above structure, an excess of anisotropic conductive film material (see 220A in FIG. 2 ) into a region spaced a first distance d from the edge line of the substrate 100 within the first gap MD outside the pad region PD. ) can be accommodated.

The display device of the present invention includes a predetermined receiving portion between the pad electrode on the substrate and the end of the substrate in the region where the connection is made, so that when the anisotropic conductive film is spread by heat and pressure during bonding, the anisotropic conductive film is formed without overflowing the edge line of the substrate can be accepted Accordingly, when the anisotropic conductive film passes through the edge line, it is possible to prevent the substrate from floating, which is a problem.

Thereby, it is possible to prevent stress on the substrate, such as a lifting phenomenon that starts at the edge line after scribing of the substrate.

A display device according to an embodiment of the present invention includes a substrate having an active region and an inactive region, a pad region spaced apart from an edge line by a first interval in a portion of the inactive region, and an inorganic insulation provided on the substrate; A stack, a pad electrode provided on the inorganic insulating stack in the pad region, a circuit film connected to the pad electrode, and within the first gap, are spaced apart from the edge line by a first distance smaller than the first gap It may include an anisotropic conductive film receiving portion provided.

The circuit film may overlap the first gap and pass through an edge line of the substrate.

The anisotropic conductive film accommodating part may be formed of one or more recesses or convex parts on the inorganic insulating stack.

The recess may be formed by removing the inorganic insulating stack.

The anisotropic conductive film accommodating part may be formed of an organic structure on the inorganic insulating stack.

The organic structure may include a planarization layer and a bank.

A first planarization layer pattern of the same layer as the planarization layer may be provided at an edge of the pad electrode.

The inorganic insulating stack may include an inorganic buffer layer, an active buffer layer, and an interlayer insulating layer.

The active region includes a first line and a second line crossing each other, at least one of the first line and the second line, and the pad electrode are positioned on the same layer, and the first line and the second line The interlayer insulating layer may pass therebetween.

In the active region, a second planarization layer pattern covering the first line and the second line is provided on the same layer as the planarization layer, and a light emitting device including a first electrode, a light emitting layer, and a second electrode on the planarization layer may be further provided.

A bank pattern may be further provided on the same layer as the bank while partially overlapping the edge of the first electrode.

The anisotropic conductive film accommodating part may include one or more first regions from which the inorganic insulating stack is removed, and one or more patterns provided on the inorganic insulating stack.

The first region and the pattern may have a rectangular shape along a length direction of the circuit film.

The inorganic insulating stack may include a removed second region in a region overlapping the edge line within the first distance.

The substrate may include a plurality of polymer layers and an inorganic interlayer insulating layer between the polymer layers.

An anisotropic conductive film may be further included between the pad electrode and the circuit film.

The circuit film may be connected to the pad electrode by a conductive ball included in the anisotropic conductive film.

On the other hand, the present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention. It will be clear to those of ordinary skill in the art.

100: substrate 101: first polymer layer
102: first polymer layer 103: inorganic interlayer insulating film
1000: weapon insulation stack 110: weapon buffer
120: active buffer 130: gate insulating film
140: interlayer insulating film 150: pad electrode
165: planarization layer 170: bank
180: anisotropic conductive film receiving area 1650: anisotropic conductive film receiving pattern
180a: Weapon Insulation Stack Removal Area

Claims (17)

a substrate having an active region and an inactive region, the substrate having a pad region spaced apart from an edge line by a first interval in a portion of the inactive region;
an inorganic insulating stack provided on the substrate;
a pad electrode provided on the inorganic insulating stack in the pad region;
a circuit film connected to the pad electrode; and
The display device including an anisotropic conductive film accommodating part spaced apart from the edge line by a first distance smaller than the first gap within the first gap. The method of claim 1,
The circuit film overlaps the first gap and passes through an edge line of the substrate. The method of claim 1,
The anisotropic conductive film accommodating part includes one or more recesses or convex parts on the inorganic insulating stack. 4. The method of claim 3,
The recessed portion is formed by removing the inorganic insulating stack. 4. The method of claim 3,
The anisotropic conductive film accommodating part is disposed on the inorganic insulating stack and includes an organic structure. 6. The method of claim 5,
The organic structure includes a planarization layer and a bank. 7. The method of claim 6,
A display device in which a first planarization layer pattern of the same layer as the planarization layer is provided at an edge of the pad electrode. 7. The method of claim 6,
The inorganic insulating stack includes an inorganic buffer layer, an active buffer layer, and an interlayer insulating layer. 9. The method of claim 8,
The active region includes a first line and a second line crossing each other,
At least one of the first line and the second line and the pad electrode are located on the same layer,
The interlayer insulating layer passes between the first line and the second line. 10. The method of claim 9,
In the active region, a second planarization layer pattern covering the first line and the second line is provided on the same layer as the planarization layer,
A display device further comprising a light emitting element including a first electrode, a light emitting layer, and a second electrode on the planarization layer. 11. The method of claim 10,
The display device partially overlaps the edge of the first electrode and further includes a bank pattern on the same layer as the bank. 3. The method of claim 2,
The anisotropic conductive film receiving portion includes at least one first region from which the inorganic insulating stack is removed;
A display device including one or more patterns provided on the inorganic insulating stack. 13. The method of claim 12,
The first region and the pattern have a rectangular shape along a length direction of the circuit film. 13. The method of claim 12,
The inorganic insulating stack includes a second region removed from a region overlapping the edge line within the first distance. The method of claim 1,
The substrate includes a plurality of polymer layers and an inorganic interlayer insulating layer between the polymer layers. The method of claim 1,
and an anisotropic conductive film between the pad electrode and the circuit film. 17. The method of claim 16,
The circuit film is connected to the pad electrode by a conductive ball included in the anisotropic conductive film.

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