KR20210081990A - Display device - Google Patents

Abstract

Embodiments of the present invention relate to a display device and, more specifically, to a display device which has a hydrogen sacrificial layer so that even when hydrogen is generated in an encapsulation layer, the hydrogen generated in the encapsulation layer does not affect a lower portion of the encapsulation layer. Accordingly, it is possible to prevent deterioration of a transistor located in the lower portion of the encapsulation layer.

Description

display device {DISPLAY DEVICE}

Embodiments of the present invention relate to a display device.

As the information society develops, the demand for a display device for displaying an image is increasing in various forms, and accordingly, various types of display devices such as a liquid crystal display device, an organic light emitting display device, a quantum dot display device, etc. have been developed and have.

A display panel of a display device includes transistors and light emitting elements, and an encapsulation layer for protecting the light emitting elements from moisture or air may be deposited on the light emitting elements.

In the case of such a display device, deterioration of transistors disposed in the display panel occurs due to various factors, and the reliability of the transistor is reduced, which causes abnormal light emission from the light emitting element of the display panel and deterioration of image quality is observed. have. Accordingly, a compensation technology for compensating for the characteristics of the transistor has been developed. In spite of the compensation technology, abnormal deterioration of the transistor cannot be solved, abnormal light emission occurs in the light emitting element of the display panel, and the phenomenon that image quality is deteriorated has been observed.

The present applicant has identified that hydrogen generated in the encapsulation layer due to the gas used in the deposition of the encapsulation layer is the cause of abnormal deterioration of the transistor, and even if hydrogen is generated in the encapsulation layer due to the gas used in the deposition of the encapsulation layer, the encapsulation We would like to suggest a method that can prevent deterioration of the reliability of transistors located below the layer.

Accordingly, embodiments of the present invention may provide a display device including a hydrogen sacrificial layer so that even if hydrogen is generated in the encapsulation layer, the hydrogen generated in the encapsulation layer does not affect the lower portion of the encapsulation layer.

In addition, embodiments of the present invention may provide a display device that can utilize the hydrogen sacrificial layer as a touch sensor.

In addition, embodiments of the present invention, even if the characteristic change of the hydrogen sacrificial layer occurs due to hydrogen, as a way to reversely utilize the characteristic change of the hydrogen sacrificial layer, the hydrogen sacrificial layer is used as a more excellent touch sensor A display device may be provided.

Embodiments of the present invention include a substrate partitioned into an active region and a non-active region, a transistor positioned on the substrate but positioned in the active region, a pixel electrode electrically connected to a source electrode or a drain electrode of the transistor, and a pixel electrode a light emitting layer positioned on the light emitting layer, a common electrode positioned on the light emitting layer, a first encapsulation layer positioned on the common electrode, a second encapsulation layer on the first encapsulation layer, and a third encapsulation layer positioned on the second encapsulation layer A display panel including an encapsulation layer and a hydrogen sacrificial layer disposed under the third encapsulation layer, and a touch electrically connected to the hydrogen sacrificial layer and supplying a touch driving signal to the hydrogen sacrificial layer or detecting a signal from the hydrogen sacrificial layer A display device including a circuit may be provided.

In the display device according to the embodiments of the present invention, the hydrogen sacrificial layer is disposed between the first encapsulation layer and the second encapsulation layer in the active region, and under the third encapsulation layer in the pad region in the non-active region. and disposed between the first encapsulation layer and the third encapsulation layer in a region adjacent to the active region rather than the pad region in the non-active region.

In the display device according to the embodiments of the present invention, the second encapsulation layer and the third encapsulation layer may contain hydrogen. The first encapsulation layer may not contain hydrogen or may have a hydrogen content less than that of the second encapsulation layer and the third encapsulation layer.

In the display device according to the embodiments of the present invention, the hydrogen sacrificial layer is a conductive oxide semiconductor, and electrical characteristics may be changed by hydrogen. For example, as the hydrogen content of the third encapsulation layer or the second encapsulation layer increases, electron mobility or electrical conductivity of the hydrogen sacrificial layer may increase.

In the display device according to embodiments of the present invention, the third encapsulation layer may include one or more inorganic layers, and the second encapsulation layer may include one or more organic layers.

In the display device according to the embodiments of the present invention, the display panel includes a plurality of first touch electrode lines and a plurality of second touch electrode lines electrically connected to the touch circuit, and includes the plurality of first touch electrode lines and the plurality of second touch electrode lines. The second touch electrode lines may be disposed in a direction crossing each other.

In the display device according to the embodiments of the present invention, the plurality of first touch electrode lines may be formed of a hydrogen sacrificial layer.

In the display device according to the embodiments of the present invention, the touch circuit supplies a touch driving signal to at least one of the plurality of first touch electrode lines formed of the hydrogen sacrificial layer, and senses at least one of the plurality of second touch electrode lines. to detect a touch sensing signal, or supply a touch driving signal to at least one of a plurality of second touch electrode lines, and sense at least one of a plurality of first touch electrode lines formed of a hydrogen sacrificial layer to detect a touch sensing signal. have.

In the display device according to the embodiments of the present invention, each of the plurality of first touch electrode lines is electrically connected to the touch circuit through the first touch routing wiring, and each of the plurality of second touch electrode lines is the second touch routing wiring may be electrically connected to the touch circuit. The first touch routing wiring and the first touch electrode line may be integrated or electrically connected through a contact hole, and the second touch routing wiring and the second touch electrode line may be integrated or electrically connected through a contact hole.

In the display device according to the embodiments of the present invention, each of the plurality of first touch electrode lines may include a plurality of first touch electrodes and a plurality of first connection lines electrically connecting the plurality of first touch electrodes. can The plurality of first touch electrodes and the plurality of first connection lines may be integrated.

In the display device according to the embodiments of the present invention, each of the plurality of second touch electrode lines includes a plurality of second touch electrodes and a plurality of second connection lines electrically connecting the plurality of second touch electrodes, , the plurality of second touch electrodes and the plurality of second connection lines may be electrically connected through a contact hole.

In the display device according to the embodiments of the present invention, both the plurality of first touch electrodes and the plurality of first connection lines may be formed of a hydrogen sacrificial layer.

In the display device according to embodiments of the present invention, the plurality of second touch electrodes may include the same material as the common electrode, and the plurality of second connection lines may include the same material as the pixel electrode.

In the display device according to the embodiments of the present invention, the common electrode may include a plurality of common electrode blocks, and each of the plurality of common electrode blocks may overlap two or more subpixels.

In the display device according to the embodiments of the present invention, the plurality of common electrode blocks may be disposed on the same layer as the plurality of second touch electrodes, and may be disposed on a layer different from the plurality of second connection lines.

In the display device according to the embodiments of the present invention, one common electrode block is disposed between two second touch electrodes electrically connected to one second connection line among a plurality of second touch electrodes, and one common electrode block is disposed. The electrode block may overlap one second connection line.

In the display device according to the embodiments of the present invention, the hydrogen sacrificial layer may overlap the transistor positioned in the active region of the display panel. Here, the transistor may be an oxide transistor.

In the display device according to the embodiments of the present invention, the non-active region of the display panel may include a gate driving circuit region. The display device according to the exemplary embodiments of the present invention may further include a gate driving circuit configured to output a scan signal to a gate line electrically connected to the gate electrode of the transistor and disposed in a gate-in-panel type in the gate driving circuit region. .

In the display device according to the embodiments of the present invention, the hydrogen sacrificial layer is disposed to extend from the active region to the gate driving circuit region of the non-active region, and includes a transistor included in the gate driving circuit disposed in the gate driving circuit region; can be nested. Here, the transistor included in the gate-in-panel type gate driving circuit may be an oxide transistor.

Embodiments of the present invention include a substrate partitioned into an active region and a non-active region, a transistor positioned on the substrate but positioned in the active region, a pixel electrode electrically connected to a source electrode or a drain electrode of the transistor, and a pixel electrode an encapsulation layer positioned on the light emitting layer, a common electrode positioned on the light emitting layer, and an encapsulation layer positioned on the common electrode, including a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer, and having an inclined surface at the outside; It is possible to provide a display device including at least one dam positioned at the end of the slope of the layer and having a height higher than a pad to which the driving circuit is connected, and a hydrogen sacrificial layer disposed under the third encapsulation layer.

In the display device according to the embodiments of the present invention, the hydrogen sacrificial layer is disposed between the first encapsulation layer and the second encapsulation layer in the active region, and extends to the non-active region, passes over one or more dams, and is electrically connected to the pad. can be connected to

According to embodiments of the present invention, by providing a hydrogen sacrificial layer inside or under the encapsulation layer, it is possible to prevent the transistor located under the encapsulation layer from being deteriorated by hydrogen. Accordingly, abnormal light emission of the light emitting element can be prevented.

According to the embodiments of the present invention, by providing a hydrogen sacrificial layer inside or under the encapsulation layer, it is possible to prevent deterioration of the transistor in the gate-in-panel type gate driving circuit located under the encapsulation layer by hydrogen. . Accordingly, abnormal driving of the gate driving circuit can be prevented.

According to the embodiments of the present invention, it is possible to provide a display panel with a built-in touch sensor by using the hydrogen sacrificial layer as a touch sensor, thereby reducing the process or time required to separately configure the touch sensor, and the panel The structure can also be simplified.

According to embodiments of the present invention, even if the characteristic change of the hydrogen sacrificial layer occurs due to hydrogen, the characteristic change of the hydrogen sacrificial layer is reversely utilized, and the hydrogen sacrificial layer can be utilized as a more excellent touch sensor.

1 is a system configuration diagram of a display device according to embodiments of the present invention.
2 is an equivalent circuit of a sub-pixel of a display device according to embodiments of the present invention.
3 is a cross-sectional view of a display panel according to example embodiments.
4 is a view for explaining a phenomenon in which hydrogen is generated in an encapsulation layer of a display panel and an effect of hydrogen generated in the encapsulation layer on a display panel according to embodiments of the present invention.
5 is a view illustrating a hydrogen sacrificial layer formed in the encapsulation layer so that hydrogen generated in the encapsulation layer of the display panel does not affect panel components positioned below the encapsulation layer according to embodiments of the present invention.
6 is a diagram illustrating a touch sensing system using a hydrogen sacrificial layer as a touch sensor in a display device according to embodiments of the present invention.
7 is another diagram illustrating a touch sensing system using a hydrogen sacrificial layer as a touch sensor in a display device according to embodiments of the present invention.
8 is a plan view showing an enlarged area X of FIGS. 6 and 7 .
FIG. 9 is a diagram illustrating second touch electrodes, second connection lines, and common electrode blocks in FIG. 8 .
FIG. 10 is a cross-sectional view taken along line AB of FIG. 8 .
FIG. 11 is a CD cross-sectional view of FIG. 8 .
12 is a diagram illustrating a first touch pad having a first touch electrode line and a second touch electrode line disposed in a non-active area when a hydrogen sacrificial layer is used as a touch sensor in the display device according to the embodiments of the present invention; It is a cross-sectional view showing a structure respectively connected to the second touch pad.
13 is a cross-sectional view illustrating a hydrogen sacrificial layer extending to a non-active region in order to protect a transistor in a gate driving circuit disposed in a non-active region from hydrogen in a display device according to embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In adding reference numerals to components of each drawing, the same components may have the same reference numerals as much as possible even though they are indicated in different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted. When "includes", "has", "consisting of", etc. mentioned in this specification are used, other parts may be added unless "only" is used. When a component is expressed in a singular, it may include a case in which the plural is included unless otherwise explicitly stated.

In addition, in describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, order, or number of the elements are not limited by the terms.

In the description of the positional relationship of the components, when two or more components are described as being "connected", "coupled" or "connected", the two or more components are directly "connected", "coupled" or "connected" ", but it will be understood that two or more components and other components may be further "interposed" and "connected," "coupled," or "connected." Here, other components may be included in one or more of two or more components that are “connected”, “coupled” or “connected” to each other.

In the description of the temporal flow relation related to the components, the operation method, the manufacturing method, etc., for example, a temporal precedence relationship such as "after", "after", "after", "before", etc. Or, when a flow precedence relationship is described, it may include a case where it is not continuous unless "immediately" or "directly" is used.

On the other hand, when numerical values or corresponding information (eg, level, etc.) for a component are mentioned, even if there is no explicit description, the numerical value or the corresponding information is based on various factors (eg, process factors, internal or external shock, Noise, etc.) may be interpreted as including an error range that may occur.

1 is a system configuration diagram of a display device 100 according to embodiments of the present invention.

1 is a system configuration diagram of a display device 100 according to embodiments of the present invention.

Referring to FIG. 1 , in a display device 100 according to embodiments of the present invention, a plurality of data lines DL and a plurality of gate lines GL are disposed, and a plurality of subpixels SP are disposed. The display panel 110 , the data driving circuit 120 driving the plurality of data lines DL, the gate driving circuit 130 driving the plurality of gate lines GL, and the data driving circuit 120 , The display controller 140 for controlling the gate driving circuit 130 may be included.

The data driving circuit 120 may supply the image data voltage Vdata to the plurality of data lines DL according to the timing control of the display controller 140 .

The gate driving circuit 130 may sequentially supply the scan signal SCAN to the plurality of gate lines GL according to the timing control of the display controller 140 .

The display panel 110 may include an active area AA in which an image is displayed and a non-active area NA in which an image is not displayed. The non-active area NA is also referred to as a bezel area. The non-active area NA or the case portion covering the non-active area NA may or may not be visible from the front of the display device 100 .

The plurality of data lines DL disposed in the active area AA of the display panel 110 are a plurality of data pads disposed in the pad area 121 disposed in the non-active area NA of the display panel 110 . is electrically connected to

The data driving circuit 120 may be electrically connected to a plurality of data pads disposed in the pad region 121 .

The data driving circuit 120 may implement a chip on film (COF) type, and may be mounted on a circuit film bonded to the pad region 121 of the display panel 110 . Alternatively, the data driving circuit 120 may be implemented as a chip on glass (COG) type or a chip on panel (COP) type, and may be directly mounted on the pad area 121 of the display panel 110 .

The gate driving circuit 130 may be implemented as a chip on film (COF) type, and may be mounted on a circuit film electrically connected to the display panel 110 . Alternatively, the gate driving circuit 130 may be implemented as a chip on glass (COG) type or a chip on panel (COP) type and mounted on the non-active area NA of the display panel 110 . In this case, the gate driving circuit 130 is referred to as a chip on glass (COG) type or a chip on panel (COP) type. Alternatively, the gate driving circuit 130 may be implemented as a GIP (Gate In Panel) type and formed in the non-active area NA of the display panel 110 .

The display device 100 according to the embodiments of the present invention may be a liquid crystal display (LCD) including a backlight unit, but an organic light emitting diode (OLED) display, a quantum dot display, a micro LED ( It may be a self-luminous display such as a Micro Light Emitting Diode) display.

When the display device 100 according to embodiments of the present invention is a self-luminous display, each sub-pixel SP may include a light emitting device ED that emits light by itself.

When the display device 100 according to the embodiments of the present invention is an OLED display, each subpixel SP may include an organic light emitting diode (OLED) emitting light as a light emitting device. When the display device 100 according to the present exemplary embodiment is a quantum dot display, each subpixel SP may include a light emitting device made of quantum dots, which are semiconductor crystals that emit light by themselves. When the display device 100 according to the present embodiments is a micro LED display, each sub-pixel SP emits light by itself and may include a micro LED (Micro Light Emitting Diode) made of an inorganic material as a light emitting device. .

The display device 100 according to embodiments of the present invention may provide a function of sensing a touch by a finger, a pen, or the like, in addition to a function of displaying an image. Accordingly, the display device 100 may include a touch sensor and a touch circuit for sensing a touch.

2 is an equivalent circuit of a sub-pixel SP of the display device 100 according to embodiments of the present invention.

Referring to FIG. 2 , in the display device 100 according to the exemplary embodiment of the present invention, each sub-pixel SP includes a light emitting device ED and a driving transistor ( ) controlling a current flowing to the light emitting device ED. DRT), a scan transistor SCT that transfers the image data voltage Vdata to the driving transistor DRT, and a storage capacitor Cst for maintaining the voltage for a predetermined period of time.

The light emitting device ED includes a pixel electrode PE and a common electrode CE, and a light emitting layer EL positioned between the pixel electrode PE and the common electrode CE. The light emitting device ED may be, for example, an organic light emitting diode (OLED), a light emitting diode (LED), or a quantum dot light emitting device.

In the light emitting device ED, the pixel electrode PE may be an anode electrode, and the common electrode CE may be a cathode electrode. A ground voltage EVSS may be applied to the common electrode CE of the light emitting device ED. Here, the base voltage EVSS may be, for example, a ground voltage or a voltage similar to the ground voltage.

The driving transistor DRT is a transistor for driving the light emitting device ED, and includes a first node N1 , a second node N2 , and a third node N3 .

The first node N1 of the driving transistor DRT is a node corresponding to a gate node and may be electrically connected to a source node or a drain node of the scan transistor SCT. The second node N2 of the driving transistor DRT may be electrically connected to the pixel electrode PE of the light emitting device ED, and may be a source node or a drain node. The third node N3 of the driving transistor DRT is a node to which the driving voltage EVDD is applied, and may be electrically connected to a driving voltage line (DVL) that supplies the driving voltage EVDD, and is a drain node. Or it may be a source node.

The scan transistor SCT may control the connection between the first node N1 of the driving transistor DRT and the corresponding data line DL in response to the scan signal SCAN supplied from the gate line GL.

A drain node or a source node of the scan transistor SCT may be electrically connected to a corresponding data line DL. A source node or a drain node of the scan transistor SCT may be electrically connected to the first node N1 of the driving transistor DRT. A gate node of the scan transistor SCT may be electrically connected to the gate line GL to receive the scan signal SCAN.

The scan transistor SCT is turned on by the scan signal SCAN of the turn-on level gate voltage, and is turned off by the scan signal SCAN of the turn-off level gate voltage. Here, when the scan transistor SCT is an N-type, a gate voltage of a turn-on level may be a high-level gate voltage VGH, and a gate voltage of a turn-off level may be a low-level gate voltage VGL. . When the scan transistor SCT is of the P type, the turn-on level gate voltage may be a low level gate voltage VGL, and the turn-off level gate voltage may be a high level gate voltage VGH.

The scan transistor SCT is turned on by the scan signal SCAN of the gate voltage of the turn-on level, and applies the image data voltage Vdata supplied from the corresponding data line DL to the second of the driving transistor DRT. It can be transmitted to one node (N1).

The storage capacitor Cst is electrically connected between the first node N1 and the second node N2 of the driving transistor DRT, and the image data voltage Vdata corresponding to the image signal voltage or a voltage corresponding thereto can be maintained for one frame time.

The storage capacitor Cst is not a parasitic capacitor (eg, Cgs, Cgd), which is an internal capacitor that exists between the first node N1 and the second node N2 of the driving transistor DRT, but is driven. It may be an external capacitor intentionally designed outside the transistor DRT.

Each of the driving transistor DRT and the scan transistor SCT may be an N-type transistor or a P-type transistor. Both the driving transistor DRT and the scan transistor SCT may be N-type transistors or P-type transistors. At least one of the driving transistor DRT and the scan transistor SCT may be an N-type transistor (or a P-type transistor), and the other may be a P-type transistor (or an N-type transistor).

The structure of the sub-pixel SP illustrated in FIG. 2 is only an example for description, and may further include one or more transistors or, in some cases, one or more capacitors. Alternatively, each of the plurality of sub-pixels SP may have the same structure, and some of the plurality of sub-pixels SP may have a different structure.

3 is a cross-sectional view of a display panel 110 according to embodiments of the present invention.

Referring to FIG. 3 , a transistor array and various signal lines are disposed on a substrate SUB. Transistors DRT and SCT and capacitor Cst included in each subpixel SP, and signal lines such as a plurality of data lines DL and a plurality of gate lines GL are disposed on the substrate SUB. .

A plurality of electrodes EM corresponding to the second node N2 of the plurality of driving transistors DRT is disposed on the substrate SUB.

The light emitting device ED includes a pixel electrode PE, a light emitting layer EL, and a common electrode CE. The pixel electrode PE is a portion of the driving transistor DRT exposed through the contact hole of the planarization layer PLN. It is electrically connected to the electrode EM corresponding to the second node N2 .

A bank BANK may be disposed on a portion of the pixel electrode PE and the planarization layer PLN. The bank BANK may be disposed to define a light emitting area of the subpixel SP. The bank BANK is opened so that a portion of the pixel electrode PE of each subpixel SP is exposed. The exposed portion of the pixel electrode PE corresponds to the emission area of the subpixel SP.

The light emitting layer EL is formed on a portion of the pixel electrode PE exposed by the bank BANK. The light emitting layer EL is formed by stacking the hole related layer, the light emitting layer, and the electron related layer on the pixel electrode PE in the order or in reverse order. The common electrode CE is formed to face the pixel electrode PE with the emission layer EL interposed therebetween.

Referring to FIG. 3 , the display panel 110 has an encapsulation layer (ENCAP) for preventing external moisture or oxygen from penetrating in order to protect the light emitting device ED, which is vulnerable to moisture or oxygen, from external moisture or oxygen. ) may be included.

The encapsulation layer ENCAP may be formed of one layer, or may include multiple layers (eg, PAS1, PCL, PAS2).

The encapsulation layer ENCAP may include a first encapsulation layer PAS1 , a second encapsulation layer PCL, and a third encapsulation layer PAS2 .

Among the first encapsulation layer PAS1, the second encapsulation layer PCL, and the third encapsulation layer PAS2, the second encapsulation layer PCL is disposed in the middle, and the first encapsulation layer PAS1 and the third encapsulation layer PAS2 ) may be disposed below and above the second encapsulation layer PCL.

Each of the first encapsulation layer PAS1 and the third encapsulation layer PAS2 may include one or more inorganic layers including an inorganic material. The second encapsulation layer PCL may include one or more organic layers including organic materials. The second encapsulation layer PCL may include at least one organic layer and at least one inorganic layer.

The first encapsulation layer PAS1 is formed on the substrate SUB on which the common electrode CE is formed to be closest to the light emitting device ED. The first encapsulation layer PAS1 is formed of, for example, an inorganic insulating material capable of low-temperature deposition, such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiONx), or aluminum oxide (Al2O3). Since the first encapsulation layer PAS1 is deposited in a low temperature atmosphere, the first encapsulation layer PAS1 may prevent the light emitting layer EL including an organic material vulnerable to a high temperature atmosphere from being damaged during the deposition process.

The second encapsulation layer PCL may have a smaller area than the first encapsulation layer PAS1 . In this case, the second encapsulation layer PCL exposes both ends of the first encapsulation layer PAS1 . can be formed. The second encapsulation layer PCL may serve as a buffer for relieving stress between layers due to bending of the display device 100 , and may serve to enhance planarization performance. The second encapsulation layer PCL may be formed of, for example, an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC). For example, the second encapsulation layer PCL may be formed through an inkjet method.

The third encapsulation layer PAS2 is positioned on the second encapsulation layer PCL including one or more organic layers. The third encapsulation layer PAS2 may be formed of, for example, an inorganic insulating material capable of low-temperature deposition, such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiONx), or aluminum oxide (Al2O3). .

During the manufacturing process of the display panel 110 , when the third encapsulation layer PAS2 including silicon nitride (SiNx) is deposited, a special gas such as monosilane (SiH4) and ammonia (NH3) is used.

Referring to FIG. 3 , one or more dams DAM1 and DAM2 for preventing the encapsulation layer ENCAP from collapsing may be formed in the display panel 100 .

One or more dams DAM1 and DAM2 may exist at or near the boundary between the active area AA and the non-active area NA. For example, one or more of the dams DAM1 and DAM2 may be a region of a point that suddenly rises from the outside to the inside. Alternatively, the one or more dams DAM1 and DAM2 may refer to an area at a point where the slope of the encapsulation layer ENCAP descends along the slope ENCAP_SLOPE and then the slope of the encapsulation layer ENCAP suddenly softens or becomes higher again. have.

Referring to FIG. 3 , one or more dams DAM1 and DAM2 may be disposed between the active area AA and the pad area 121 .

The one or more dams DAM1 and DAM2 may be located only in the non-active area NA, and most of them exist in the non-active area NA, but some of them may span the active area AA.

In the one or more dams DAM1 and DAM2, when the liquid second encapsulation layer PCL is dropped on the active area AA, the liquid second encapsulation layer PCL moves in the direction of the non-active area NA. It can be prevented from collapsing and encroaching on the pad PAD of the pad area 121 . This effect may be greater when two or more dams DAM1 and DAM2 are formed.

At least one of the primary dam DAM1 closest to the active area AA and the secondary dam DAM2 next to the active area AA may be formed in a single-layered or multi-layered structure. The primary dam DAM1 and/or the secondary dam DAM2 may be basically made of a dam formation pattern DFP. The dam formation pattern DFP may have a higher height than the touch pad TP disposed in the pad area 121 .

The dam formation pattern DFP may be formed of the same material as the bank BANK for separating the sub-pixels SP in the active area AA. In some cases, the dam formation pattern DFP may be formed of the same material as a spacer for maintaining an interlayer gap. In this case, the dam formation pattern DFP may be formed at the same time as the bank or the spacer, and thus the dam structure may be formed without a mask addition process and cost increase.

At least one of the first encapsulation layer PAS1, the third encapsulation layer PAS2, and the second encapsulation layer PCL is formed on the first dam DAM1 and/or the second dam DAM2 on the dam formation pattern DFP. It may have a multi-layer structure laminated to

The second encapsulation layer PCL including the organic material may be located only on the inner side of the innermost primary dam DAM1. Alternatively, the second encapsulation layer PCL including an organic material may be positioned on at least the first dam DAM1 among the first dam DAM1 and the second dam DAM2.

The third encapsulation layer PAS2 may be formed on the substrate SUB on which the second encapsulation layer PCL is formed to cover upper surfaces and side surfaces of the second encapsulation layer PCL and the first encapsulation layer PAS1, respectively. have. The third encapsulation layer PAS2 minimizes or blocks external moisture or oxygen from penetrating into the first encapsulation layer PAS1 and the second encapsulation layer PCL. The third encapsulation layer PAS2 is formed of, for example, an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

Meanwhile, the cross-sectional view of FIG. 3 conceptually shows the structure, and the position, thickness, or width of each pattern (various layers or various electrodes) may vary depending on the viewing direction or position, and the connection structure of various patterns It may be changed, and additional layers may be present in addition to the several illustrated layers, and some of the illustrated various layers may be omitted or integrated. For example, the width of the bank BANK may be narrower than the drawing, and the heights of the dams DAM1 and DAM2 may be lower or higher than the drawing.

4 illustrates a phenomenon in which hydrogen is generated in the encapsulation layer ENCAP of the display panel 110 and the effect of hydrogen generated in the encapsulation layer ENCAP on the display panel 110 according to embodiments of the present invention. It is a drawing for

The display panel 110 may include an active area AA in which an image is displayed and a non-active area NA in which an image is not displayed.

The encapsulation layer ENCAP may be formed by thin film encapsulation (TFE), which is a thin film encapsulation technology, and may include first to third encapsulation layers PAS1 , PCL, PAS2 , and the like.

The encapsulation layer ENCAP is disposed in the active area AA, but extends to the non-active area NA and may be located near the dams DAM1 and DAM2 or up to the top of the dams DAM1 and DAM2.

A plurality of sub-pixels SP are disposed in the active area AA. Accordingly, transistors SP_TR included in each of the plurality of subpixels SP may be disposed in the active area AA. A transistor SP_TR included in one sub-pixel SP exemplarily illustrated in FIG. 4 corresponds to a driving transistor DRT in which the pixel electrode PE and a source node or a drain node are electrically connected.

Referring to FIG. 4 , the gate driving circuit 130 may be implemented as a gate in panel (GIP) type and disposed in the non-active area NA of the display panel 110 . .

The gate driving circuit 130 may include a plurality of gate driving transistors GIP_TR to output the scan signals SCAN to the plurality of gate lines GL disposed in the active area AA.

The gate driving circuit 130 is a gate driving transistor GIP_TR, and includes a pull-up transistor Tup and a pull-down transistor Tdown connected in series between a first voltage and a second voltage, and , to control the voltage of each of the gate node (referred to as the Q node) of the pull-up transistor Tup and the gate node (referred to as the QB node) of the pull-down transistor Tdown, a plurality of control transistors, etc. can do.

The output node (source node or drain node) of the pull-up transistor Tup and the output node (drain node or source node) of the pull-down transistor Tdown are electrically connected to each other, and this connection point is one gate line (GL) can be connected.

A first voltage is applied to an input node (a drain node or a source node) of the pull-up transistor Tup, where the first voltage may be a corresponding clock signal. A second voltage is applied to an input node (a source node or a drain node) of the pull-down transistor Tdown, where the second voltage may be a low-level gate voltage. The pull-up transistor Tup and the pull-down transistor Tdown may be alternately turned on.

The gate driving transistor GIP_TR illustrated in FIG. 4 exemplarily illustrates a pull-up transistor Tup and a pull-down transistor Tdown connected in series.

As described above, the GIP type gate driving circuit 130 and clock signal lines for supplying several clock signals to the gate driving circuit 130 may be disposed in the non-active area NA.

Accordingly, the non-active region NA may include a gate driving circuit region GIPA in which the gate driving circuit 130 is disposed and a clock interconnection region CLKA in which clock wires are disposed.

Referring to FIG. 4 , a special gas containing a lot of hydrogen, such as monosilane (SiH4) and ammonia (NH3), is used when forming the encapsulation layer (ENCAP) when manufacturing a panel. Accordingly, a large amount of hydrogen may be extracted from the encapsulation layer ENCAP. In particular, in the encapsulation layer (ENCAP), for example, when the third encapsulation layer (PAS2) including silicon nitride (SiNx) is deposited, monosilane (SiH4) containing a large amount of hydrogen, ammonia (NH3), etc. Since gas is used, the third encapsulation layer PAS2 contains a large amount of hydrogen, and a large amount of hydrogen may be released even after the panel is manufactured. The hydrogens thus released may be in a gaseous state or in an ionic state.

Referring to FIG. 4 , the hydrogens H emitted to the third encapsulation layer PAS2 are transferred to the second encapsulation layer PCL and the first encapsulation layer PAS1 including the organic layer, and further, the encapsulation layer (ENCAP) can also be delivered to the lower part.

The transistors SP_TR in the active area AA and the transistors GIP_TR in the gate driving circuit area GIPA of the non-active area NA may be disposed under the encapsulation layer ENCAP.

Hydrogens H transferred to the lower portion of the encapsulation layer ENCAP are the transistors SP_TR in the active area AA and the transistors GIP_TR in the gate driving circuit area GIPA of the non-active area NA. may affect

All or part of the transistors SP_TR in the active area AA and the transistors GIP_TR in the gate driving circuit area GIPA of the non-active area NA may be oxide transistors using an oxide semiconductor as an active layer. have.

In the oxide transistor in the active region AA, deterioration is accelerated by hydrogens H descending from the encapsulation layer ENCAP, and an abnormal phenomenon such as a phenomenon in which the threshold voltage shifts in a negative direction may occur. As a result, the driving transistor DRT, which is an oxide transistor in the active area AA, operates abnormally, which may cause abnormal light emission of the light emitting device ED of the corresponding sub-pixel SP. As a result, the image quality of the display panel 110 may be deteriorated.

In addition, deterioration of the oxide transistor in the gate driving circuit region GIPA of the non-active region NA is accelerated by hydrogens H descending from the encapsulation layer ENCAP, so that the threshold voltage is shifted in the negative direction. ), abnormal phenomena such as Due to this, the pull-up transistor Tup or the pull-down transistor Tdown, which are oxide transistors in the active area AA, operate abnormally, which causes an erroneous scan signal SCAN to be output to the corresponding gate line GL. can be As a result, an image quality may be deteriorated due to a gate driving error of the display panel 110 .

The panel configurations affected by the hydrogens H descending from the encapsulation layer ENCAP include the transistors SP_TR in the active area AA and the transistors in the gate driving circuit area GIPA of the non-active area NA. (GIP_TR) as well as other configurations including oxide (Oxide) may be used.

Accordingly, the embodiments of the present invention provide a structure that can prevent the negative effects of hydrogens (H), which may inevitably occur due to the formation of the encapsulation layer (ENCAP), on panel components (transistors). A layer (HSL) is proposed.

In addition, in the embodiments of the present invention, the hydrogen sacrificial layer (HLS) is not used only for the role of blocking the transfer of hydrogen to the panel components located below the encapsulation layer (ENCAP) (hydrogen blocking role), but the touch sensor We propose a method for using it as a configuration and a touch sensor structure. Hereinafter, an arrangement structure of the hydrogen sacrificial layer (HSL), a touch sensor structure using the same, and a touch sensing method will be described in detail.

5 is a diagram illustrating an effect of hydrogen generated in the encapsulation layer ENCAP of the display panel 110 according to embodiments of the present invention on panel components (eg, transistors, etc.) positioned below the encapsulation layer ENCAP. It is a view showing the hydrogen sacrificial layer HSL formed in the encapsulation layer ENCAP so as not to affect it. However, hereinafter, for convenience of description, the driving transistor DRT is exemplified as the transistors SP_TR positioned in the active area AA.

Referring to FIG. 5 , a display device 100 according to embodiments of the present invention includes a substrate SUB divided into an active area AA and a non-active area NA, and is positioned on the substrate SUB. However, a transistor SP_TR (eg, a driving transistor DRT) positioned in the active area AA, a pixel electrode PE electrically connected to a source electrode or a drain electrode of the transistor DRT, and a pixel electrode PE ), the light emitting layer EL positioned on the light emitting layer EL, the common electrode CE positioned on the light emitting layer EL, and the common electrode CE, the first encapsulation layer PAS1 and the second encapsulation layer PCL and a third encapsulation layer PAS2, the encapsulation layer ENCAP having an inclined surface ENCAP_SLOPE on the outside, and a driving pad positioned at the end of the inclined surface ENCAP_SLOPE of the encapsulation layer ENCAP and connected to the driving circuit One or more dams DAM1 and DAM2 having a height higher than the pad of the region 121 may be included.

Referring to FIG. 5 , in the display device 100 according to embodiments of the present invention, hydrogen generated in the third encapsulation layer PAS2 of the encapsulation layer ENCAP is located under the encapsulation layer ENCAP. A hydrogen sacrificial layer (HSL) formed inside the encapsulation layer (ENCAP) may be included in order to block the influence on the components.

Referring to FIG. 5 , the hydrogen sacrificial layer HSL may be disposed under the third encapsulation layer PAS2 . Depending on the location, the hydrogen sacrificial layer HSL may be disposed between the third encapsulation layer PAS2 and the first encapsulation layer PAS1 . Alternatively, depending on the location, the hydrogen sacrificial layer HSL may be disposed between the first encapsulation layer PAS1 and the second encapsulation layer PCL.

In the active area AA, the hydrogen sacrificial layer HSL may be disposed between the first encapsulation layer PAS1 and the second encapsulation layer PCL.

In the non-active area NA, all of the first encapsulation layer PAS1 , the second encapsulation layer PCL, and the third encapsulation layer PAS2 included in the encapsulation layer ENCAP may exist, and the first encapsulation layer Only the third encapsulation layer PAS2 may exist among the PAS1, the second encapsulation layer PCL, and the third encapsulation layer PAS2, or only the third encapsulation layer PAS3 and the first encapsulation layer PAS1 may exist. .

As described above, the third encapsulation layer PAS2 may include one or more inorganic layers, and the second encapsulation layer PCL may include one or more organic layers. In addition, the first encapsulation layer PAS1 may include one or more inorganic layers.

The second encapsulation layer PCL and the third encapsulation layer PAS2 may contain a large amount of hydrogen. In particular, the third encapsulation layer PAS2 may have a relatively higher hydrogen content.

When hydrogens (eg, in an ionic state or gaseous state) are released from the third encapsulation layer PAS2, the hydrogen sacrificial layer HSL may react with hydrogens to become conductive or to increase the degree of conductorization. Accordingly, in the hydrogen sacrificial layer HSL, electrical properties (eg, electrical conductivity, electron mobility, etc.) may be changed by hydrogen.

The hydrogen sacrificial layer HSL reacts with hydrogens emitted from the third encapsulation layer PAS2 and descending (eg in an ionic state or gaseous state), so that the hydrogens do not go down or hydrogens that descend under the hydrogen sacrificial layer HSL can be significantly reduced.

Accordingly, due to the hydrogen sacrificial layer HSL, the first encapsulation layer PAS1 positioned below the hydrogen sacrificial layer HSL does not contain hydrogen, or the second encapsulation layer PCL and the third encapsulation layer PAS2 do not contain hydrogen. ) may have a hydrogen content less than the hydrogen content of

For example, the hydrogen sacrificial layer HSL may be an oxide semiconductor. Here, the oxide semiconductor includes, for example, one or more of Indium Gallium Zinc Oxide (IGZO), Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Tin Zinc Oxide (ITZO), Titanium Nitride (TiN), and the like. can do.

The hydrogen sacrificial layer (HSL) may have already undergone a conductive treatment during the panel manufacturing process. That is, the hydrogen sacrificial layer HSL may be a conductive oxide semiconductor.

In this case, when hydrogens (eg, ionic or gaseous) are released from the third encapsulation layer PAS2, the hydrogen sacrificial layer HSL may react with the hydrogens to increase the degree of conductorization. Accordingly, in the hydrogen sacrificial layer HSL, electrical properties (eg, electrical conductivity, electron mobility, etc.) may be changed by hydrogen. For example, as the hydrogen content of the third encapsulation layer PAS2 and the second encapsulation layer PCL increases, the hydrogen sacrificial layer HSL may react with more hydrogen to increase the level of conduction. Accordingly, as the hydrogen content of the third encapsulation layer PAS2 and the second encapsulation layer PCL increases, electron mobility or electrical conductivity of the hydrogen sacrificial layer HSL may increase.

The hydrogen sacrificial layer HSL may extend from the active area AA to the non-active area NA. The hydrogen sacrificial layer HSL is disposed under the third encapsulation layer PAS2 , but may further extend to an outer region where the encapsulation layer ENCAP is not present. For example, the hydrogen sacrificial layer HSL extends from the active area AA to the non-active area NA, passes over one or more dams DAM1 and DAM2 , and the pad PAD of the driving pad area 121 . may be electrically connected to. This will be described again later.

Below, the method of using the hydrogen sacrificial layer (HLS) as a touch sensor configuration as well as a role of blocking the transfer of hydrogen to the panel components located under the encapsulation layer (ENCAP) (hydrogen blocking role) and touch The sensor structure will be described in detail.

The display device 100 according to embodiments of the present invention may sense a touch based on capacitance (self-capacitance) between a touch electrode and a finger, etc., or sense a touch based on capacitance (mutual-capacitance) between the touch electrodes. You may. However, hereinafter, for convenience of description, a case in which the display device 100 according to embodiments of the present invention senses a touch based on capacitance (mutual-capacitance) between touch electrodes will be described as an example.

6 is a view showing a touch sensing system using a hydrogen sacrificial layer (HSL) as a touch sensor in the display device 100 according to embodiments of the present invention, and FIG. 7 is an embodiment of the present invention. Another view showing a touch sensing system using a hydrogen sacrificial layer (HSL) as a touch sensor in the display device 100 according to the present invention.

6 and 7 , in order to provide a touch sensing function, the display device 100 according to embodiments of the present invention drives and senses a touch sensor and the touch sensor to determine the presence or absence of a touch and/or touch coordinates. It may include a determining touch circuit 600 .

The touch circuit 600 may include a driver 610 for driving the touch sensor and a receiver 620 for sensing the touch sensor. The driver 610 may supply the touch driving signal TDS to the touch sensor, and the receiver 620 may receive the touch sensing signal TSS from the touch sensor.

The touch circuit 600 may further include a touch controller that determines the presence or absence of a touch or touch coordinates based on the touch sensing signal TSS received by the receiver 620 . The touch controller may be included in the receiver 620 .

6 and 7 , the touch sensor may include a plurality of touch electrodes TE1 and TE2, and a method of configuring the plurality of touch electrodes TE1 and TE2, or a plurality of touch electrodes ( A method of disposing TE1 and TE2 , a shape of each of the plurality of touch electrodes TE1 and TE2 , a method of connecting the plurality of touch electrodes TE1 and TE2 may be changed.

6 and 7 , the display device 100 according to embodiments of the present invention may sense a touch based on a mutual capacitance between two touch electrodes TE1 and TE2.

In this mutual-capacitance-based touch sensing method, the touch electrodes TE1 and TE2 are transmit (Tx) touch electrodes to which the touch driving signal TDS is applied by the driver 610 (also referred to as driving touch electrodes). and a receiving (Rx) touch electrode (also referred to as a sensing touch electrode) from which the touch sensing signal TSS is detected by the receiver 620 .

6 is a Tx touch electrode to which the touch driving signal TDS is applied by the driver 610 to the plurality of first touch electrodes TE1 , and the plurality of second touch electrodes TE2 are touched by the receiver 620 . It is an Rx touch electrode from which the sensing signal TSS is detected.

7 is an Rx touch electrode in which a touch sensing signal TSS is detected by the receiver 620 in which the plurality of first touch electrodes TE1 are touched by the driver 610 , and the plurality of second touch electrodes TE2 are touched by the driver 610 . It is a Tx touch electrode to which the driving signal TDS is applied.

In the display device 100 according to embodiments of the present invention, the hydrogen sacrificial layer HSL may be electrically connected to the touch circuit 600 .

In the display device 100 according to embodiments of the present invention, the hydrogen sacrificial layer HSL may be used as the first touch electrode TE1, which is a type of touch sensor.

6 , the first touch electrode TE1 may be a Tx touch electrode. In this case, the touch circuit 600 may supply the touch driving signal TDS to the hydrogen sacrificial layer HSL.

7 , the first touch electrode TE1 may be an Rx touch electrode. In this case, the touch circuit 600 may detect the touch sensing signal TSS from the hydrogen sacrificial layer HSL.

A touch sensor structure for mutual-capacitance-based touch sensing will be described in more detail with reference to FIGS. 6 and 7 . FIG. 8 is an enlarged plan view of region X of FIGS. 6 and 7 , and FIG. 9 shows only the second touch electrodes TE2 , the second connection lines CL2 and the common electrode block CEB in FIG. 8 . It is a separate view, and FIG. 10 is a cross-sectional view taken along line AB of FIG. 8 , and FIG.

6 and 7 , the display panel 110 may include a plurality of first touch electrode lines TEL1 and a plurality of second touch electrode lines TEL2 . The plurality of first touch electrode lines TEL1 and the plurality of second touch electrode lines TEL2 may be disposed in an intersecting direction. The plurality of first touch electrode lines TEL1 and the plurality of second touch electrode lines TEL2 cross each other, but may be electrically separated from each other in the display panel 110 .

The plurality of first touch electrode lines TEL1 are electrically connected to the touch circuit 600 .

The plurality of second touch electrode lines TEL2 are electrically connected to the touch circuit 600 .

The plurality of first touch electrode lines TEL1 may be formed of a hydrogen sacrificial layer HSL. In other words, the hydrogen sacrificial layer HSL may include a plurality of first touch electrode lines TEL1 . Or vice versa, the plurality of first touch electrode lines TEL1 may include the hydrogen sacrificial layer HSL.

Referring to FIG. 6 , the touch circuit 600 supplies a touch driving signal TDS to at least one of a plurality of first touch electrode lines TEL1 formed of a hydrogen sacrificial layer HSL and a plurality of second touch electrode lines ( The touch sensing signal TSS may be detected by sensing at least one of TEL2).

Referring to FIG. 7 , the touch circuit 600 supplies the touch driving signal TDS to at least one of the plurality of second touch electrode lines TEL2 , and a plurality of first touch electrode lines formed of the hydrogen sacrificial layer HSL. At least one of TEL1 may be sensed to detect the touch sensing signal TSS.

6 to 8 , each of the plurality of first touch electrode lines TEL1 includes a plurality of first touch electrodes TE1 and a plurality of first touch electrodes TE1 electrically connecting the plurality of first touch electrodes TE1 to each other. A connection line CL1 may be included. For example, the plurality of first touch electrodes TE1 and the plurality of first connection lines CL1 may be integrated.

6 to 8 , each of the plurality of second touch electrode lines TEL2 includes a plurality of second touch electrodes TE2 and a plurality of second touch electrodes TE2 electrically connecting the plurality of second touch electrodes TE2 to each other. A connection line CL2 may be included. For example, the plurality of second touch electrodes TE2 and the plurality of second connection lines CL2 may be electrically connected through the contact hole CNT.

Referring to FIG. 11 , a planarization layer PLN may be positioned on the insulating layer INS of several layers, and a bank BANK for defining an emission area of a subpixel SP may be formed on the planarization layer PLN. have. The contact hole CNT electrically connecting the second touch electrode TE2 and the second connection line CL2 may correspond to a hole of the bank BANK.

6 to 8 , each of the plurality of first touch electrode lines TEL1 may be electrically connected to the touch circuit 600 through the first touch routing line TRL1 .

The first touch routing wire TRL1 and the first touch electrode line TEL1 may be integrated or electrically connected through the contact hole CNT. For example, both the first touch routing line TRL1 and the first touch electrode line TEL1 may be formed of a hydrogen sacrificial layer HSL.

6 to 8 , each of the plurality of second touch electrode lines TEL2 may be electrically connected to the touch circuit 600 through the second touch routing line TRL2 .

The second touch routing line TRL2 and the second touch electrode line TEL2 may be integrated or electrically connected through the contact hole CNT. For example, the second touch routing line TR2 may be an extension of the second connection line CL2 .

8 to 11 , the plurality of first touch electrodes TE1 and the plurality of first connection lines CL1 may all be formed of a hydrogen sacrificial layer HSL.

8 to 11 , the plurality of second touch electrodes TE2 may include the same material as the common electrode CE. The plurality of second touch electrodes TE2 and the common electrode CE may be disposed on the same layer. The plurality of second touch electrodes TE2 and the common electrode CE may be simultaneously formed.

8 and 9 , in the display device 100 according to embodiments of the present invention, the common electrode CE may include a plurality of common electrode blocks CEB. That is, in the display device 100 according to embodiments of the present invention, the common electrode CE is divided into a plurality of common electrode blocks CEB.

8 and 9 , each of the plurality of common electrode blocks CEB may overlap two or more subpixels SP.

8 to 11 , the plurality of common electrode blocks CEB may be disposed on the same layer as the plurality of second touch electrodes TE2 . The plurality of common electrode blocks CEB and the plurality of second touch electrodes TE2 may include the same material. The plurality of common electrode blocks CEB and the plurality of second touch electrodes TE2 may be simultaneously formed.

8 to 11 , the plurality of common electrode blocks CEB may be disposed on a layer different from the plurality of second connection lines CL2 . The plurality of common electrode blocks CEB and the plurality of second connection lines CL2 may include different materials. The plurality of common electrode blocks CEB and the plurality of second connection lines CL2 may be separately formed.

8 to 11 , between the second connection line CL2 of one of the plurality of second touch electrodes TE2 and the two second touch electrodes TE2 electrically connected to each other, one device required for driving the display is provided. A common electrode block CEB may be disposed.

8 to 11 , one common electrode block CEB may overlap one second connection line CL2 .

Meanwhile, as described above, the electrical properties of the hydrogen sacrificial layer HSL are changed by hydrogen to increase the level of conduction, and thus, electrical conductivity or electron mobility may increase.

The hydrogen sacrificial layer (HSL) according to embodiments of the present invention can not only block the transfer of hydrogen downward by sacrificing itself (react with hydrogen), but also react with hydrogen to generate electricity corresponding to its electrical properties. By increasing the conductivity or electron mobility, the performance of applying or transmitting the touch-related signals TDS and TSS as the touch sensor may be improved.

In the hydrogen sacrificial layer (HSL) according to embodiments of the present invention, as the third encapsulation layer (PAS2) generates more hydrogen, the hydrogen sacrificial layer (HSL) basically performs a hydrogen-blocking role and makes itself conductive. By raising the level, it can better fulfill its role as a touch sensor. Accordingly, the display device 100 according to embodiments of the present invention can improve touch sensing performance by using the hydrogen sacrificial layer (HSL) as a touch sensor, reversely using the hydrogen generation phenomenon, which has been a problem in the prior art. have.

12 is a diagram illustrating a first touch electrode line TEL1 and a second touch electrode line TEL2 when a hydrogen sacrificial layer HSL is used as a touch sensor in the display device 100 according to embodiments of the present invention. It is a cross-sectional view illustrating a structure respectively connected to the first touch pad TP1 and the second touch pad TP2 disposed in the non-active area NA. However, in FIG. 12 , it is assumed that the first touch electrode line TEL1 and the first touch routing wire TRL1 are integrally formed.

Referring to FIG. 12 , a pad area 121 in which a plurality of first touch pads TP1 and a plurality of second touch pads TP2 are positioned on a substrate SUB is formed outside the non-active area NA. may exist.

The first touch pad TP1 may be electrically connected to the first touch routing line TRL1 , and the second touch pad TP2 may be electrically connected to the second touch routing line TRL2 .

When the first touch electrode TE1 formed of the hydrogen sacrificial layer HSL corresponds to the Tx touch electrode and the second touch electrode TE2 is the Rx touch electrode, the driver 610 is provided on the first touch pad TP1. Electrically connected, the receiver 620 may be electrically connected to the second touch pad TP2.

When the first touch electrode TE1 formed of the hydrogen sacrificial layer HSL corresponds to the Rx touch electrode and the second touch electrode TE2 is the Tx touch electrode, the receiver 620 is provided to the first touch pad TP1. The driver 610 may be electrically connected to the second touch pad TP2 .

Referring to FIG. 12 , the encapsulation layer ENCAP includes first to third encapsulation layers PAS1 , PCL and PAS2 , and whether the first to third encapsulation layers PAS1 , PCL and PAS2 exist depending on the location. may vary.

In the active area AA, all of the first to third encapsulation layers PAS1, PCL, and PAS2 are present. In the pad area 121 in the non-active area NA, only the third encapsulation layer PAS2 may exist. In the non-active area NA, in an area closer to the active area AA than the pad area 121 , the second encapsulation layer PCL is not present, and the first encapsulation layer PAS1 and the third encapsulation layer PAS1 are not present. Only layer PAS2 may be present.

Referring to FIG. 12 , in the active area AA, it may be disposed between the first encapsulation layer PAS1 and the second encapsulation layer PAS2 . In the pad area 121 in the non-active area NA, it may be disposed under the third encapsulation layer PAS2 . It may be disposed between the first encapsulation layer PAS1 and the third encapsulation layer PAS2 in an area adjacent to the active area AA rather than the pad area 121 in the non-active area NA.

Referring to FIG. 12 , the first touch electrode line TEL1 including the first touch electrode TE1 formed of the hydrogen sacrificial layer HSL extends to the non-active area NA.

The first touch electrode line TEL1 extending to the non-active area NA is a first touch routing wire TRL1 , passing along the upper surface of the first encapsulation layer PAS1 , and passing through the first encapsulation layer PAS1 . may come down along a side surface or an inclined surface of , and may be electrically connected to the first touch pad TP1 disposed in the pad area 121 .

Referring to FIG. 12 , the second touch electrode TE2 disposed on the same layer as the common electrode block CEB in the active area AA, through the hole CNT of the bank BANK, is a pixel electrode PE. It may be electrically connected to the second connection line CL2 disposed on the same layer as .

Referring to FIG. 12 , the second connection line CL2 may extend to the non-active area NA. The second connection line CL2 extending to the non-active area NA may be electrically connected to the second touch pad TP2 disposed in the pad area 121 as the second touch routing line TRL2 . The second connection line CL2 or the second touch routing line TRL2 may be located under the first encapsulation layer PAS1.

Referring to FIG. 12 , the hydrogen sacrificial layer HSL serving as a touch sensor may overlap the transistor SP_TR positioned in the active area AA of the display panel 110 . Here, the transistor SP_TR may be an oxide transistor.

The transistor SP_TR positioned in the active area AA may include a driving transistor DRT and a scan transistor SCT in the subpixel SP of FIG. 2 .

The transistor SP_TR illustrated in FIG. 12 is a driving transistor DRT having a second node N2 that is a source node or a drain node electrically connected to the pixel electrode PE.

Referring to FIG. 12 , the hydrogen emitted to the third encapsulation layer PAS2 is blocked by the hydrogen sacrificial layer HSL serving as a touch sensor and does not descend below the hydrogen sacrificial layer HSL. Accordingly, the transistor SP_TR located in the active area AA is not exposed to hydrogen. In particular, since the oxide semiconductor forming the channel of the transistor SP_TR positioned in the active region AA is not exposed to hydrogen, undesirable deterioration may be prevented.

13 illustrates a non-active region in order to protect the transistor GIP_TR in the gate driving circuit 130 disposed in the non-active region NA from hydrogen in the display device 100 according to embodiments of the present invention. It is a cross-sectional view showing the hydrogen sacrificial layer (HSL) extended to (NA).

Referring to FIG. 13 , the display device 100 of the present invention outputs a scan signal SCAN to the gate line GL electrically connected to the gate electrode of the transistor SCT, and outputs the scan signal SCAN to the gate driving circuit area GIPA. The gate driving circuit 130 may include a gate in panel (GIP) type.

Accordingly, the non-active region NA in which the GIP-type gate driving circuit 130 is disposed includes the gate driving circuit region GIPA in which the GIP-type gate driving circuit 130 is disposed and the gate driving circuit 130 . It may include a clock wiring area CLKA in which clock wirings supplying clock signals are disposed.

Referring to FIG. 13 , all of the first to third encapsulation layers PAS1 , PCL and PAS2 exist in the active area AA. In a portion of the gate driving circuit area GIPA in the non-active area NA, the second encapsulation layer PCL may not exist and only the first encapsulation layer PAS1 and the third encapsulation layer PAS2 may be present. have. In the clock wiring area CLKA in the non-active area NA, the second encapsulation layer PCL may not exist and only the first encapsulation layer PAS1 and the third encapsulation layer PAS2 may exist.

Referring to FIG. 13 , the hydrogen sacrificial layer HSL may extend from the active area AA to the gate driving circuit area GIPA of the non-active area NA. The hydrogen sacrificial layer HSL may overlap the transistor GIP_TR included in the gate driving circuit 130 disposed in the gate driving circuit area GIPA in the non-active region NA.

The transistor GIP_TR included in the gate-in-panel GIP type gate driving circuit 130 is an oxide transistor. For example, the transistor GIP_TR included in the gate driving circuit 130 may include a pull-up transistor Tup and a pull-down transistor Tdown.

Referring to FIG. 13 , the hydrogen sacrificial layer HSL may be disposed to extend from the active area AA to the clock wiring area CLKA through the gate driving circuit area GIPA of the non-active area NA. .

Referring to FIG. 13 , hydrogen emitted to the third encapsulation layer PAS2 is blocked by the hydrogen sacrificial layer HSL serving as a touch sensor, and does not descend below the hydrogen sacrificial layer HSL. Accordingly, the transistor GIP_TR located in the non-active region NA is not exposed to hydrogen. In particular, since the oxide semiconductor forming the channel of the transistor GIP_TR located in the non-active region NA is not exposed to hydrogen, undesirable deterioration may be prevented.

According to the embodiments of the present invention described above, by providing the hydrogen sacrificial layer HSL inside or under the encapsulation layer ENCAP, the transistor SP_TR positioned under the encapsulation layer ENCAP is deteriorated by hydrogen. can prevent this from happening. Accordingly, abnormal light emission of the light emitting element ED may be prevented.

According to embodiments of the present invention, by providing the hydrogen sacrificial layer HSL inside or below the encapsulation layer ENCAP, the transistor in the gate-in-panel type gate driving circuit 130 is located under the encapsulation layer ENCAP. It can prevent (GIP_TR) from being degraded by hydrogen. Accordingly, abnormal driving of the gate driving circuit 130 may be prevented.

According to the embodiments of the present invention, it is possible to provide the display panel 110 with a built-in touch sensor by using the hydrogen sacrificial layer (HSL) as a touch sensor, and through this, the process or time required to separately configure the touch sensor can be reduced. It can be reduced, and the panel structure can be simplified.

According to the embodiments of the present invention, even if the characteristic change of the hydrogen sacrificial layer HSL occurs due to hydrogen, the characteristic change of the hydrogen sacrificial layer HSL is reversely utilized, so that the hydrogen sacrificial layer HSL is more excellent. It can be used as a touch sensor.

The above description is merely illustrative of the technical spirit of the present invention, and various modifications and variations will be possible without departing from the essential characteristics of the present invention by those skilled in the art to which the present invention pertains. In addition, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, so the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100: display device
110: display panel
120: data driving circuit
130: gate driving circuit

Claims (20)

a substrate divided into an active region and a non-active region; a transistor positioned on the substrate but positioned in the active region; a pixel electrode electrically connected to a source electrode or a drain electrode of the transistor; and a pixel electrode positioned on the pixel electrode a light emitting layer, a common electrode positioned on the light emitting layer, a first encapsulation layer positioned on the common electrode, a second encapsulation layer on the first encapsulation layer, and a second encapsulation layer positioned on the second encapsulation layer. a display panel including three encapsulation layers and a hydrogen sacrificial layer disposed under the third encapsulation layer; and
and a touch circuit electrically connected to the hydrogen sacrificial layer and configured to supply a touch driving signal to the hydrogen sacrificial layer or detect a signal from the hydrogen sacrificial layer.
According to claim 1,
The hydrogen sacrificial layer,
in the active region, disposed between the first encapsulation layer and the second encapsulation layer;
in the pad area in the non-active area, under the third encapsulation layer;
The display device is disposed between the first encapsulation layer and the third encapsulation layer in a region adjacent to the active region rather than the pad region in the non-active region.
According to claim 1,
The second encapsulation layer and the third encapsulation layer contain hydrogen.
4. The method of claim 3,
The first encapsulation layer does not contain hydrogen or has a hydrogen content less than that of the second encapsulation layer and the third encapsulation layer.
4. The method of claim 3,
The hydrogen sacrificial layer is a conductive oxide semiconductor, and an electrical characteristic is changed by hydrogen.
6. The method of claim 5,
As the hydrogen content of the third encapsulation layer or the second encapsulation layer increases, electron mobility or electrical conductivity of the hydrogen sacrificial layer increases.
According to claim 1,
The third encapsulation layer includes at least one inorganic layer, and the second encapsulation layer includes at least one organic layer.
According to claim 1,
the display panel includes a plurality of first touch electrode lines and a plurality of second touch electrode lines electrically connected to the touch circuit;
the plurality of first touch electrode lines and the plurality of second touch electrode lines are disposed in a direction crossing each other;
The plurality of first touch electrode lines are formed of the hydrogen sacrificial layer.
9. The method of claim 8,
The touch circuit is
supplying the touch driving signal to at least one of the plurality of first touch electrode lines formed of the hydrogen sacrificial layer and sensing at least one of the plurality of second touch electrode lines to detect a touch sensing signal;
A display device configured to supply the touch driving signal to at least one of the plurality of second touch electrode lines and detect a touch sensing signal by sensing at least one of the plurality of first touch electrode lines formed of the hydrogen sacrificial layer.
9. The method of claim 8,
Each of the plurality of first touch electrode lines is electrically connected to the touch circuit through a first touch routing wire,
Each of the plurality of second touch electrode lines is electrically connected to the touch circuit through a second touch routing wire,
The first touch routing wiring and the first touch electrode line are integrated or electrically connected through a contact hole,
The second touch routing wiring and the second touch electrode line are integrated or electrically connected through a contact hole.
9. The method of claim 8,
Each of the plurality of first touch electrode lines includes a plurality of first touch electrodes and a plurality of first connection lines electrically connecting the plurality of first touch electrodes,
The plurality of first touch electrodes and the plurality of first connection lines are integrated,
Each of the plurality of second touch electrode lines includes a plurality of second touch electrodes and a plurality of second connection lines electrically connecting the plurality of second touch electrodes,
The plurality of second touch electrodes and the plurality of second connection lines are electrically connected through a contact hole.
12. The method of claim 11,
All of the plurality of first touch electrodes and the plurality of first connection lines are formed of the hydrogen sacrificial layer,
The plurality of second touch electrodes include the same material as the common electrode,
The plurality of second connection lines includes the same material as the pixel electrode.
12. The method of claim 11,
the common electrode includes a plurality of common electrode blocks, each of the plurality of common electrode blocks overlapping two or more subpixels;
The plurality of common electrode blocks are disposed on the same layer as the plurality of second touch electrodes, and the plurality of common electrode blocks are disposed on a different layer from the plurality of second connection lines.
14. The method of claim 13,
One common electrode block is disposed between two second touch electrodes electrically connected to one second connection line among the plurality of second touch electrodes,
The one common electrode block overlaps the one second connection line.
According to claim 1,
The hydrogen sacrificial layer overlaps a transistor positioned in the active region of the display panel.
According to claim 1,
The transistor is an oxide transistor.
According to claim 1,
the non-active region of the display panel includes a gate driving circuit region;
and a gate driving circuit configured to output a scan signal to a gate line electrically connected to the gate electrode of the transistor and disposed in a gate-in-panel type in the gate driving circuit region;
The hydrogen sacrificial layer is disposed to extend from the active region to the gate driving circuit region of the non-active region, and overlaps a transistor included in the gate driving circuit disposed in the gate driving circuit region.
18. The method of claim 17,
A transistor included in the gate-in-panel type gate driving circuit is an oxide transistor.
a substrate divided into an active region and a non-active region;
a transistor positioned on the substrate and positioned in the active region;
a pixel electrode electrically connected to a source electrode or a drain electrode of the transistor, and a light emitting layer disposed on the pixel electrode;
a common electrode positioned on the light emitting layer;
an encapsulation layer disposed on the common electrode, the encapsulation layer including a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer, the encapsulation layer having an inclined surface at an outer side;
at least one dam positioned at the end of the slope of the encapsulation layer and having a height higher than a pad to which the driving circuit is connected; and
and a hydrogen sacrificial layer disposed under the third encapsulation layer.
20. The method of claim 19,
The hydrogen sacrificial layer is disposed between the first encapsulation layer and the second encapsulation layer in the active region, extends to the non-active region, passes over the one or more dams, and is electrically connected to the pad. .

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