KR20210066706A - Organic light emitting diode and organic light emitting device including the same - Google Patents

Abstract

The present invention provides an organic light emitting diode and an organic light emitting device. The organic light emitting diode includes a light emitting material layer comprising a first compound and a second compound and positioned between first and second electrodes facing each other. The first compound is a compound comprising a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms. The second compound is a compound comprising a hexagonal ring moiety consisting of one boron atom, one nitrogen atom, and four carbon atoms.

Description

Organic light emitting diode and organic light emitting device {ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME}

The present invention relates to an organic light emitting diode, and more particularly, to an organic light emitting diode having excellent light emitting characteristics and an organic light emitting device including the same.

Recently, as the size of the display device increases, the demand for a flat display device that occupies less space is increasing. An organic light emitting display including an organic light emitting diode as one of these flat display devices and also called an organic electroluminescent device (OELD). 2. Description of the Related Art [0002] The technology of organic light emitting display (OLED) devices is developing at a rapid pace.

In the organic light emitting diode, holes injected from the anode and electrons injected from the cathode combine in the light emitting material layer to form excitons, which are in an unstable energy state (excited state), and then in a stable ground state. return and emit light. Conventional general fluorescent materials have low luminous efficiency because only singlet excitons participate in light emission. A phosphor that also participates in light emission of triplet excitons has higher luminous efficiency than a fluorescent material. However, a metal complex, which is a typical phosphorescent material, has a short luminescence lifetime, so there is a limit to commercialization.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting diode and an organic light emitting device capable of improving luminous efficiency while lowering a driving voltage.

The present invention, the first electrode; a second electrode facing the first electrode; A light emitting material layer comprising first and second compounds and positioned between the first and second electrodes, wherein the first compound is a hexagonal ring comprising one boron atom, one oxygen atom, and four carbon atoms. It is a compound containing a moiety, and the second compound provides an organic light emitting diode, which is a compound containing a hexagonal ring moiety composed of one boron atom, one nitrogen atom, and four carbon atoms.

In another aspect, the present invention, a first electrode; a second electrode facing the first electrode; A first light-emitting material layer and a second light-emitting material layer, and a light-emitting material layer positioned between the first and second electrodes, wherein the first light-emitting material layer contains a first compound, and the second light-emitting material layer The material layer is positioned between the first light emitting material layer and the first electrode and includes a second compound, wherein the first compound is a hexagonal ring moiety composed of one boron atom, one oxygen atom, and four carbon atoms. It is a compound comprising a, and the second compound provides an organic light emitting diode, which is a compound including a hexagonal ring moiety consisting of one boron atom, one nitrogen atom, and four carbon atoms.

In the organic light emitting diode of the present invention, the compound 1 is represented by the following formula (1), each of R1 and R2 is independently hydrogen, deuterium, tritium, halogen, silyl group, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 arylamine group, and R3 is selected from C5 to C60 heteroaryl group containing nitrogen.

[Formula 1]

In the organic light emitting diode of the present invention, the second compound is represented by the following formula 3, and R11 to R14 are each independently hydrogen, deuterium, tritium, boron, nitrogen, a C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 arylamine group, or adjacent two are bonded to each other to form a condensed ring having boron and nitrogen, and R15 to R18 are each independently Hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 arylamine group characterized in that

[Formula 3]

In the organic light emitting diode of the present invention, Chemical Formula 3 is represented by the following Chemical Formula 4-1 or Chemical Formula 4-2, and in Chemical Formula 4-1, each of R15 to R18 and R21 to R24 is independently hydrogen, deuterium, and tritium. , boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 arylamine group, in Formula 4-2 , R15 to R18 and R31 to R34 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine It is characterized in that it is selected from the group, C6-C30 arylamine group.

[Formula 4-1]

[Formula 4-2]

In the organic light emitting diode of the present invention, a difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV.

In the organic light emitting diode of the present invention, the weight % of the first compound is greater than the weight % of the second compound.

In the organic light emitting diode of the present invention, the weight % of the first compound in the first light emitting material layer is greater than the weight % of the second compound in the second light emitting material layer.

In the organic light emitting diode of the present invention, the light emitting material layer includes the second compound and further comprises a third light emitting material layer positioned between the first electrode and the first light emitting material layer. diode.

In another aspect, the present invention, a substrate; It provides an organic light emitting device including the above-described organic light emitting diode positioned on the substrate.

In the organic light emitting diode and organic light emitting device of the present invention, a first compound comprising a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms, and one boron atom and one nitrogen atom, four The second compound including a hexagonal ring moiety composed of carbon atoms is included in the same light emitting material layer or in an adjacent light emitting material layer, thereby improving the light emitting properties of the organic light emitting diode and the organic light emitting device.

1 is a schematic circuit diagram of an organic light emitting display device according to the present invention.
2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.
3 is a schematic cross-sectional view of an organic light emitting diode according to a second embodiment of the present invention.
4A to 4D are schematic diagrams for explaining an energy relationship between a first compound and a second compound in an organic light emitting diode.
5 is a schematic diagram for explaining a light emitting mechanism in an organic light emitting diode according to a second embodiment of the present invention.
6 is a schematic cross-sectional view of an organic light emitting diode according to a third embodiment of the present invention.
7 is a schematic cross-sectional view of an organic light emitting diode according to a fourth embodiment of the present invention.
8 is a schematic cross-sectional view of an organic light emitting diode according to a fifth embodiment of the present invention.
9 is a schematic cross-sectional view of an organic light emitting display device according to a sixth embodiment of the present invention.
10 is a schematic cross-sectional view of an organic light emitting display device according to a seventh exemplary embodiment of the present invention.
11 is a schematic cross-sectional view of an organic light emitting diode according to an eighth embodiment of the present invention.
12 is a schematic cross-sectional view of an organic light emitting display device according to a ninth exemplary embodiment of the present invention.
13 is a schematic cross-sectional view of an organic light emitting diode according to a tenth embodiment of the present invention.
14 is a schematic cross-sectional view of an organic light emitting diode according to an eleventh embodiment of the present invention.

Hereinafter, a preferred embodiment according to the present invention will be described with reference to the drawings.

The present invention relates to an organic light emitting diode in which a delayed fluorescent material whose energy level is controlled and a fluorescent material are applied in the same light emitting material layer or to an adjacent light emitting material layer, and an organic light emitting device including the organic light emitting diode. For example, the organic light emitting device may be an organic light emitting display device or an organic light emitting light. As an example, an organic light emitting diode display, which is a display device including an organic light emitting diode of the present invention, will be mainly described.

1 is a schematic circuit diagram of an organic light emitting display device according to the present invention.

As shown in FIG. 1 , in the organic light emitting display device, a gate line GL, a data line DL, and a power line PL, which cross each other and define a pixel region P, are formed. In the pixel region P, a switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and an organic light emitting diode D are formed. The pixel region P may include a red pixel region, a green pixel region, and a blue pixel region.

The switching thin film transistor Ts is connected to the gate line GL and the data line DL, and the driving thin film transistor Td and the storage capacitor Cst are connected between the switching thin film transistor Ts and the power line PL. do. The organic light emitting diode D is connected to the driving thin film transistor Td.

In such an organic light emitting display device, when the switching thin film transistor Ts is turned on according to the gate signal applied to the gate line GL, the data signal applied to the data line DL is applied to the switching thin film transistor. It is applied to the gate electrode of the driving thin film transistor Td and one electrode of the storage capacitor Cst through Ts.

The driving thin film transistor Td is turned on according to the data signal applied to the gate electrode, and as a result, a current proportional to the data signal is transmitted from the power line PL through the driving thin film transistor Td to the organic light emitting diode D and the organic light emitting diode (D) emits light with a luminance proportional to the current flowing through the driving thin film transistor (Td).

At this time, the storage capacitor Cst is charged with a voltage proportional to the data signal, so that the voltage of the gate electrode of the driving thin film transistor Td is constantly maintained for one frame.

Accordingly, the organic light emitting display device can display a desired image.

2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 2 , the organic light emitting display device 100 includes a substrate 110 , a thin film transistor Tr positioned on the substrate 110 , and a thin film transistor Tr positioned on the planarization layer 150 . ) includes an organic light emitting diode (D) connected to.

The substrate 110 may be a glass substrate or a flexible substrate. For example, the flexible substrate may be any one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.

A buffer layer 122 is formed on the substrate 110 , and a thin film transistor Tr is formed on the buffer layer 122 . The buffer layer 122 may be omitted.

The semiconductor layer 120 is formed on the buffer layer 122 . For example, the semiconductor layer 120 may be formed of an oxide semiconductor material. When the semiconductor layer 120 is made of an oxide semiconductor material, a light blocking pattern (not shown) may be formed under the semiconductor layer 120 . The light blocking pattern prevents light from being incident on the semiconductor layer 120 to prevent the semiconductor layer 120 from being deteriorated by the light. Optionally, the semiconductor layer 120 may be made of polycrystalline silicon, and in this case, both edges of the semiconductor layer 120 may be doped with impurities.

A gate insulating layer 124 made of an insulating material is formed on the entire surface of the substrate 110 on the semiconductor layer 120 . The gate insulating layer 124 may be formed of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx).

A gate electrode 130 made of a conductive material such as metal is formed on the gate insulating layer 124 to correspond to the center of the semiconductor layer 120 . Although the gate insulating layer 122 is formed on the entire surface of the substrate 110 in FIG. 2 , the gate insulating layer 120 may be patterned in the same shape as the gate electrode 130 .

An interlayer insulating layer 132 made of an insulating material is formed on the entire surface of the substrate 110 on the gate electrode 130 . The interlayer insulating layer 132 may be formed of an inorganic insulating material such as silicon oxide or silicon nitride, or an organic insulating material such as benzocyclobutene or photo-acryl.

The interlayer insulating layer 132 has first and second semiconductor layer contact holes 134 and 136 exposing upper surfaces of both sides of the semiconductor layer 120 . The first and second semiconductor layer contact holes 134 and 136 are positioned at both sides of the gate electrode 130 to be spaced apart from the gate electrode 130 . In FIG. 2 , first and second semiconductor layer contact holes 134 and 136 are formed in the interlayer insulating layer 132 and the gate insulating layer 122 . Alternatively, when the gate insulating layer 122 is patterned to have the same shape as the gate electrode 130 , the first and second semiconductor layer contact holes 134 and 136 may be formed only in the interlayer insulating layer 132 .

A source electrode 144 and a drain electrode 146 made of a conductive material such as metal are formed on the interlayer insulating layer 132 . The source electrode 144 and the drain electrode 146 are spaced apart from the center of the gate electrode 130 , and are formed on both sides of the semiconductor layer 120 through the first and second semiconductor layer contact holes 134 and 136 , respectively. contact

The semiconductor layer 120 , the gate electrode 130 , the source electrode 154 , and the drain electrode 156 form a thin film transistor Tr, and the thin film transistor Tr functions as a driving element. That is, the thin film transistor Tr is the driving thin film transistor Td of FIG. 1 .

In FIG. 2 , the thin film transistor Tr has a coplanar structure in which the gate electrode 130 , the source electrode 154 , and the drain electrode 156 are positioned on the semiconductor layer 120 . Alternatively, the thin film transistor Tr may have an inverted staggered structure in which a gate electrode is positioned under a semiconductor layer, and a source electrode and a drain electrode are positioned above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.

Although not shown, a switching thin film transistor, which is a switching element connected to the gate line and the data line, is further formed to define a pixel area by crossing the gate line and the data line. The switching element is connected to a thin film transistor Tr as a driving element. In addition, the power line is formed to be spaced apart from the data line or the data line in parallel, and a storage capacitor for maintaining a constant voltage of the gate electrode of the thin film transistor Tr during one frame may be further configured.

A planarization layer 150 is formed on the entire surface of the substrate 110 on the source electrode 144 and the drain electrode 146 . The planarization layer 150 has a flat top surface and has a drain contact hole 152 exposing the drain electrode 146 of the thin film transistor Tr.

The organic light emitting diode (D) is positioned on the planarization layer 150 and includes a first electrode 210 connected to the drain electrode 146 of the thin film transistor Tr, and a light emitting layer sequentially stacked on the first electrode 210 . 220 and a second electrode 230 . The organic light emitting diode D is positioned in each of the red pixel region, the green pixel region, and the blue pixel region, and can emit red, green, and blue light, respectively.

The first electrode 210 is formed separately for each pixel area. The first electrode 210 may be an anode, and may be made of a conductive material having a relatively high work function value, for example, a transparent conductive oxide (TCO). Specifically, the first electrode 210 includes indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-zinc-oxide (indium-). It may be made of tin-zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO), and aluminum:zinc oxide (Al:ZnO; AZO). .

When the organic light emitting diode display 100 of the present invention is a bottom-emission type, the first electrode 210 may have a single-layer structure of a transparent conductive oxide layer. Meanwhile, when the organic light emitting diode display 100 of the present invention is a top-emission type, a reflective electrode or a reflective layer may be further formed under the first electrode 210 . For example, the reflective electrode or the reflective layer may be made of silver or an aluminum-palladium-copper (APC) alloy. In the top emission type organic light emitting diode (D), the first electrode 210 may have a triple layer structure of ITO/Ag/ITO or ITO/APC/ITO.

In addition, a bank layer 160 covering an edge of the first electrode 210 is formed on the planarization layer 150 . The bank layer 160 exposes the center of the first electrode 210 corresponding to the pixel area.

A light emitting layer 220 which is a light emitting unit is formed on the first electrode 210 . In one exemplary embodiment, the light emitting layer 220 may have a single layer structure of an emitting material layer (EML). Contrary to this, the light emitting layer 220 includes a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), and a hole blocking layer (HBL). , an electron transport layer (ETL), and at least one of an electron injection layer (EIL) may be further included. In addition, the light emitting layer 220 may have a single-layer structure or a multi-layer structure. In addition, since two or more light emitting layers are spaced apart from each other, the organic light emitting diode D may have a tandem structure.

The second electrode 230 is formed on the substrate 110 on which the light emitting layer 220 is formed. The second electrode 230 is located on the entire surface of the display area and is made of a conductive material having a relatively small work function value and may be used as a cathode. For example, the second electrode 230 may be made of a material having good reflective properties, such as aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), or an alloy or combination thereof. When the organic light emitting diode display 100 is a top emission type, the second electrode 230 has a thin thickness and has a light transmission (semitransmission) characteristic.

Although not shown, the organic light emitting diode display 100 may include color filters (not shown) corresponding to red, green, and blue pixel areas. For example, when the organic light emitting diode D has a tandem structure, emits white light, and is formed to correspond to the entire red, green, and blue pixel regions, red, green, and blue color filter patterns are applied to each pixel region. Thus, the organic light emitting display device 100 can implement full-color. When the organic light emitting diode display 100 is a bottom light emitting type, a color filter may be positioned between the organic light emitting diode D and the substrate 110 , for example, between the interlayer insulating layer 132 and the planarization layer 150 . . Alternatively, when the organic light emitting diode display 100 is a top emission type, the color filter may be located above the organic light emitting diode D, that is, above the second electrode 230 .

An encapsulation film 170 is formed on the second electrode 230 to prevent external moisture from penetrating into the organic light emitting diode (D). The encapsulation film 170 may have a stacked structure of the first inorganic insulating layer 172 , the organic insulating layer 174 , and the second inorganic insulating layer 176 , but is not limited thereto.

The organic light emitting display device 100 may further include a polarizing plate (not shown) for reducing reflection of external light. For example, the polarizing plate (not shown) may be a circular polarizing plate. When the organic light emitting display device 100 is a bottom light emitting type, the polarizing plate may be located under the substrate 110 . On the other hand, when the organic light emitting display device 100 of the present invention is a top emission type, the polarizing plate may be located on the encapsulation film 170 .

In addition, in the top emission type organic light emitting display device 100 , a cover window (not shown) may be attached to the encapsulation film 170 or a polarizing plate (not shown). In this case, when the substrate 110 and the cover window (not shown) are made of a flexible material, a flexible display device may be configured.

3 is a schematic cross-sectional view of an organic light emitting diode according to a second embodiment of the present invention.

As shown in FIG. 3 , the organic light emitting diode D1 has a first electrode 210 and a second electrode 230 facing each other, and a light emitting layer positioned between the first and second electrodes 210 and 230 ( 220). The light emitting layer 220 includes light emitting material layers EML and 240 . The organic light emitting display device 100 of FIG. 2 may include a red pixel area, a green pixel area, and a blue pixel area, and the organic light emitting diode D1 may be located in the blue pixel area.

The first electrode 210 may be an anode, and the second electrode 230 may be a cathode.

In addition, the light emitting layer 220 is a hole transport layer (HTL, 260) positioned between the first electrode 210 and the light emitting material layer 240 and the electron positioned between the light emitting material layer 240 and the second electrode (230). At least one of the transport layers ETL and 270 may be further included.

In addition, the light emitting layer 220 is located between the hole injection layer (HIL, 250) located between the first electrode 210 and the hole transport layer 260 and the electron transport layer 270 and the second electrode 230, the electron injection At least one of the layers EIL 280 may be further included.

In addition, the light emitting layer 220 is located between the light emitting material layer 240 and the hole transport layer 260 (EBL, 265) and the light emitting material layer 240 and the hole blocking layer 270 located between the hole blocking layer (270). At least one of the layers HBL and 275 may be further included.

For example, the hole injection layer 250 is 4,4',4"-tris(3-methylphenylamino)triphenylamine (MTDATA), 4,4',4"-tris(N,N-diphenyl-amino)triphenylamine ( NATA), 4,4',4"-tris(N-(naphthalene-1-yl)-N-phenyl-amino)triphenylamine(1T-NATA), 4,4',4"-tris(N-(naphthalene) -2-yl)-N-phenyl-amino)triphenylamine (2T-NATA), copper phthalocyanine (CuPc), tris(4-carbazoyl-9-yl-phenyl)amine (TCTA), N,N'-diphenyl-N ,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (NPB; NPD), 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (dipyrazino[2,3- f:2'3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile; HAT-CN), 1,3,5-tris[4-(diphenylamino)phenyl]benzene (TDAPB), poly(3,4-ethylenedioxythiphene)polystyrene sulfonate(PEDOT/PSS), N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl) It may include at least one compound of phenyl)-9H-fluoren-2-amine, but is not limited thereto.

The hole transport layer 260 is N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine; TPD), NPB(NPD), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl(CBP), poly[N,N'-bis(4-butylpnehyl)-N,N'-bis (phenyl)-benzidine](Poly-TPD), (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)) ] (TFB), di-[4-(N,N-di-p-tolyl-amino)-phenyl]cyclohexane(TAPC), 3,5-di(9H-carbazol-9-yl)-N,N- diphenylaniline (DCDPA), N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, may include at least one compound of N-(biphenyl-4-yl)-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)biphenyl-4-amine, but is not limited thereto .

The electron transport layer 270 is an oxadiazole-based compound, a triazole-based compound, a phenanthroline-based compound, a benzoxazole-based compound, and benzoxazole. The compound may include any one of a thiazole-based compound, a benzimidazole-based compound, and a triazine-based compound. For example, the electron transport layer 270 may include tris-(8-hydroxyquinoline aluminum (Alq ₃ ), 2-biphenyl-4-yl-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD)). , spiro-PBD, lithium quinolate(Liq), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene(TPBi), bis(2-methyl-8-quinolinolato-N1,O8)-(1, 1'-biphenyl-4-olato)aluminum(BAlq), 4,7-diphenyl-1,10-phenanthroline(Bphen), 2,9-bis(naphthalene-2-yl)4,7-diphenyl-1,10 -phenanthroline (NBphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenathroline (BCP), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4 -triazole (TAZ), 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 1,3,5-tri (p-pyrid-3-yl -phenyl)benzene(TpPyPB), 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)1,3,5-triazine(TmPPPyTz), Poly[9,9-bis (3'-((N,N-dimethyl)-N-ethylammonium)-propyl)-2,7-fluorene]-alt-2,7-(9,9-dioctylfluorene)](PFNBr), tris(phenylquinoxaline( TPQ), and may include at least one compound of diphenyl-4-triphenylsilyl-phenylphosphine oxide (TSPO1), but is not limited thereto.

The electron injection layer 280 may include at least one of an alkali halide-based material such as LiF, CsF, NaF, and BaF ₂ and/or an organometallic material such as Liq, lithium benzoate, and sodium stearate, but is not limited thereto.

The electron blocking layer 265 located between the hole transport layer 260 and the light emitting material layer 240 to prevent electron movement from the light emitting material layer 240 to the hole transport layer 260 is TCTA, tris [4- (diethylamino) )phenyl]amine, N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, TAPC, MTDATA, 1,3-bis(carbazol-9-yl)benzene(mCP), 3,3'-bis(N-carbazolyl)-1,1'-biphenyl(mCBP), CuPc, N,N'- bis[4-[bis(3-methylphenyl)amino]phenyl]-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine(DNTPD), TDAPB, DCDPA, 2,8- bis(9-phenyl-9H-carbazol-3-yl)dibenzo[b,d]thiophene), but is not limited thereto.

In addition, the hole blocking layer 275 positioned between the light emitting material layer 240 and the electron transport layer 270 to prevent hole movement from the light emitting material layer 240 to the electron transport layer 270 is the electron transport layer 270 described above. ) material can be used. The hole blocking layer 275 is a material having a lower HOMO energy level than the material included in the light emitting material layer 240 , for example, BCP, BAlq, Alq3, PBD, spiro-PBD, Liq, bis-4,6-(3). ,5-di-3-pyridylphenyl)-2-methylpyrimidine (B3PYMPM), bis[2-(diphenylphosphino)phenyl]teeth oxide (DPEPO), 9-(6-9H-carbazol-9-yl)pyridine-3-yl ) -9H-3,9'-bicarbazole and at least one of TSPO1, but is not limited thereto.

The light emitting material layer 240 includes a first compound that is a delayed fluorescent material (compound) and a second compound that is a fluorescent material (compound). In addition, the light emitting material layer 240 may further include a third compound serving as a host. The light emitting material layer 240 including the first compound and the second compound emits blue light, and the organic light emitting diode D is located in the blue pixel region.

For example, a third compound that is a host is 9-(3-(9H-carbazol-9-yl)phenyl)-9H-carbazole-3-carbonitrile (9-(3-(9H-carbazol-9-) yl)phenyl)-9H-carbazole-3-carbonitrile; mCP-CN), CBP, 3,3'-bis(N-carbazolyl)-1,1'-biphenyl (3,3'-bis(N-) carbazolyl)-1,1'-biphenyl; mCBP), 1,3-bis(carbazol-9-yl)benzene (1,3-Bis(carbazol-9-yl)benzene; mCP), (oxybis(2 ,1-phenylene))bis(diphenylphosphine oxide)(Oxybis(2,1-phenylene))bis(diphenylphosphine oxide; DPEPO), 2,8-bis(diphenylphosphoryl)dibenzothiophene (2 ,8-bis(diphenylphosphoryl)dibenzothiophene; PPT), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene (1,3,5-Tri[(3-pyridyl)-phen -3-yl]benzene; TmPyPB), 2,6-di(9H-carbazol-9-yl)pyridine (2,6-Di(9H-carbazol-9-yl)pyridine; PYD-2Cz), 2, 8-di(9H-carbazol-9-yl)dibenzothiophene (2,8-di(9H-carbazol-9-yl)dibenzothiophene; DCzDBT), 3', 5'-di(carbazole-9- yl)-[1,1'-biphenyl]-3,5-dicarbonitrile (3',5'-Di(carbazol-9-yl)-[1,1'-bipheyl]-3,5-dicarbonitrile ; DCzTPA), 4'-(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile (4'-(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile (4') -(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile; pCzB-2CN), 3'-(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile (3'- (9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile; mCzB-2CN), diphenyl-4-triphenylsilylphenyl-phosphine oxide (Diphenyl-4-triphenylsilylphenyl-phosphine oxide; TSPO1), 9-(9-phenyl-9H-carbazol-6-yl)-9H-carbazole (9-(9-phenyl-9H-carbazol-6-yl)-9H-carbazole; CCP), 4- (3- (triphenylen-2-yl) phenyl) dibenzo [b, d] thiophene (4- (3- (triphenylen-2-yl) phenyl) dibenzo [b, d] thiophene), 9- ( 4-(9H-carbazol-9-yl)phenyl)-9H-3,9'-bicarbazole(9-(4-(9H-carbazol-9-yl)phenyl)-9H-3,9'- bicarbazole), 9-(3-(9H-carbazol-9-yl)phenyl)-9H-3,9'-bicarbazole (9-(3-(9H-carbazol-9-yl)phenyl)-9H -3,9'-bicarbazole) and/or 9-(6-(9H-carbazol-9-yl)pyridin-3-yl)-9H-3,9'-bicarbazole (9-(6-( 9H-carbazol-9-yl)pyridin-3-yl)-9H-3,9'-bicabazole), but is not limited thereto.

The delayed fluorescent material, which is the first compound included in the light emitting material layer 240, may be a compound including a hexagonal ring moiety (hexagonal ring structure) consisting of one boron atom, one oxygen atom, and four carbon atoms, The fluorescent material as the second compound included in the light emitting material layer 240 may be a compound including a hexagonal ring moiety composed of one boron atom, one nitrogen atom, and four carbon atoms.

The delayed fluorescent material, which is the first compound included, may be represented by Formula 1 below.

[Formula 1]

In Formula 1, each of R1 and R2 is independently hydrogen, deuterium, tritium, halogen, silyl group, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, is selected from a C6-C30 arylamine group, and R3 is selected from a C5-C60 heteroaryl group containing nitrogen.

For example, each of R1 and R2 may be selected from hydrogen, a C1 to C20 alkyl group such as tert-butyl, and a C6 to C30 aryl group such as phenyl. In addition, R3 may be a heteroaryl group having an electron donor property, and indolocarbazolyl, diindolocarbazolyl, bis-carbazolyl, acridinyl, spiro It can be selected from acridinyl (spiroacridinyl), phenoxazinyl (phenoxazinyl), phenothiazinyl (phenothiazinyl) and derivatives thereof.

The alkyl group, the aryl group, and the heteroaryl group include both substituted and unsubstituted, and the substituent may be a C1-C20 alkyl group, a C6-C30 aryl group, or a C5-C30 heteroaryl group.

For example, the first compound may be any one of the compounds of Formula 2 below.

[Formula 2]

Delayed fluorescent materials have a very small difference between the singlet energy level and the triplet energy level (for example, 0.3 eV or less), and the triplet exciton energy is converted into a singlet exciton by inverse intercalation transition (RISC), so the delay Fluorescent materials have high quantum efficiency. However, the delayed fluorescent material has a very wide fullwidth at half maximum (FWHM), so there is a limit in terms of color purity.

In order to solve the problem of color purity of the delayed fluorescent material, the light emitting material layer 240 further includes a second compound which is a fluorescent material to realize superfluorescence.

The second compound, the fluorescent material, may be represented by the following formula (3).

[Formula 3]

In Formula 3, each of R11 to R14 is independently hydrogen, deuterium, tritium, boron, nitrogen, a C1 to C20 alkyl group, a C6 to C30 aryl group, a C5 to C30 heteroaryl group, a C1 to C20 alkylamine group , C6~ C30 arylamine group or adjacent two are bonded to each other to form a condensed ring having boron and nitrogen, and R15 to R18 are each independently hydrogen, deuterium, tritium, boron, nitrogen, a C1 to C20 alkyl group, It is selected from a C6-C30 aryl group, a C5-C30 heteroaryl group, a C1-C20 alkylamine group, and a C6-C30 arylamine group. For example, R12 and R13 may combine with each other to form a fused ring having boron and nitrogen.

The alkyl group, the aryl group, and the heteroaryl group include both substituted and unsubstituted, and the substituent may be a C1-C20 alkyl group, a C6-C30 aryl group, or a C5-C30 heteroaryl group.

The second compound, Chemical Formula 3, may be represented by the following Chemical Formula 4-1 or 4-2.

[Formula 4-1]

[Formula 4-2]

In Formula 4-1, R15 to R18 and R21 to R24 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6~ C30 arylamine group. In addition, in Formula 4-2, R15 to R18 and R31 to R34 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group , C1 to C20 alkylamine group, C6 to C30 arylamine group.

For example, the second compound may be any one of the compounds of Formula 5 below.

[Formula 5]

The light emitting material layer 240 of the organic light emitting diode D1 of the present invention includes a first compound and a second compound, and the exciton of the first compound is transferred to the second compound, thereby implementing a narrow half maximum width and high luminous efficiency. .

The energy level of the first compound and the energy level of the second compound of the present invention satisfy specific conditions, so that the exciton transfer efficiency from the first compound to the second compound is increased. Accordingly, the luminous efficiency and color purity of the organic light emitting diode and the organic light emitting display device are improved.

In addition, since the energy level of the first compound, the energy level of the second compound, and the energy level of the third compound satisfy specific conditions, the luminous efficiency and color purity of the organic light emitting diode and the organic light emitting display device may be improved.

4A and 4B, which are schematic drawings for explaining the energy relationship between the first compound and the second compound in the organic light emitting diode of the present invention, the highest occupied molecular orbital (HOMO) energy of the first compound The difference (ΔHOMO) between the level (HOMO1) and the HOMO energy level (HOMO2) of the second compound is less than 0.3 eV.

That is, the HOMO energy level (HOMO1) of the first compound is higher than the HOMO energy level (HOMO2) of the second compound (Fig. 4a), or the HOMO energy level (HOMO1) of the first compound is the HOMO energy level of the second compound ( HOMO2). (FIG. 4b) In this case, the difference (ΔHOMO) between the HOMO energy level (HOMO1) of the first compound and the HOMO energy level (HOMO2) of the second compound satisfies the condition that is less than 0.3 eV, so that the exciton generated in the host is the first It is efficiently delivered through the compound to the second compound. The difference (ΔHOMO) between the HOMO energy level (HOMO1) of the first compound and the HOMO energy level (HOMO2) of the second compound may be 0.2 eV or less.

In addition, the lowest unoccupied molecular orbital (LUMO) energy level (LUMO1) of the first compound is higher than the LUMO energy level (LUMO2) of the second compound, and the difference (ΔLUMO) may be 0.3 eV or less.

As described above, the first compound, which is a delayed fluorescent material, may use both singlet exciton energy and triplet exciton energy. Accordingly, when the light emitting material layer 240 includes the first compound and the second compound, the energy of the first compound is transferred to the second compound and light is emitted from the second compound, thereby improving the luminous efficiency and color purity of the organic light emitting diode.

On the other hand, even if the light emitting material layer includes the delayed fluorescent material and the fluorescent material, if the above energy condition relationship is not satisfied, there is a limit in improving the luminous efficiency and color purity. That is, when the difference (ΔHOMO) between the HOMO energy level (HOMO1) of the delayed fluorescent material and the HOMO energy level (HOMO2) of the fluorescent material is 0.3 eV or more, as shown in FIG. 4C, holes are directly transferred from the host to the fluorescent material and directly from the fluorescent material By emitting light, the luminous efficiency may decrease. In addition, as shown in FIG. 4d , the difference (ΔHOMO) between the HOMO energy level (HOMO1) of the delayed fluorescent material and the HOMO energy level (HOMO2) of the fluorescent material is 0.5 eV or more, and the LUMO energy level (LUMO1) of the delayed fluorescent material is the second compound If it is lower than the LUMO energy level (LUMO2) of the fluorescent material, an exciplex is formed between the hole trapped in the fluorescent material and the LUMO energy level of the delayed fluorescent material, and exciplex light emission occurs, resulting in a light emission wavelength shift problem. have.

In the light emitting material layer 240 , the singlet energy level of the first compound is smaller than the singlet energy level of the third compound serving as the host and is greater than the singlet energy level of the second compound. In addition, the triplet energy level of the first compound is smaller than the triplet energy level of the third compound and greater than the triplet energy level of the second compound.

In the light emitting material layer 240 (EML), the weight ratio of the first compound may be greater than the weight ratio of the second compound and smaller than the weight ratio of the third compound. When the weight ratio of the first compound is greater than the weight ratio of the second compound, energy transfer from the first compound to the second compound may sufficiently occur. For example, in the light emitting material layer 240, 20 to 40 wt% of the first compound and 0.1 to 5 wt% of the second compound may be present, but is not limited thereto.

Referring to FIG. 5, which is a schematic diagram for explaining a light emitting mechanism in an organic light emitting diode according to a second embodiment of the present invention, a singlet energy level (S1) and a triplet energy level generated in the third compound as a host (T1) is transferred to the energy level (S1) and the triplet energy level (T1) of the first compound as the delayed fluorescent material. At this time, since the difference between the singlet energy level and the triplet energy level of the first compound is relatively small, the triplet energy level (T1) in the first compound is changed to the singlet energy energy level (S1) by the inverse intercalation transition (RISC). is converted _{For example, the difference (ΔE ST} ) between the singlet energy (S1) and the triplet energy (T1) of the first compound may be about 0.3 eV or less. Thereafter, the singlet energy level (S1) of the first compound is transferred to the singlet energy level (S1) of the second compound, and finally, light emission occurs in the second compound.

As described above, the first compound having a delayed fluorescence characteristic has high quantum efficiency, but has a wide full width at half maximum, so the color purity is not good. On the other hand, the second compound having fluorescence properties has a narrow full width at half maximum, but has low luminous efficiency because triplet exciton energy does not participate in light emission.

However, in the organic light emitting diode of the present invention, the singlet exciton energy level of the first compound, which is a delayed fluorescent material, is transferred to the second compound, which is a fluorescent material, and the second compound emits light. Accordingly, the luminous efficiency and color purity of the organic light emitting diode D1 are improved. Furthermore, since the first compound of Chemical Formulas 1 and 2 and the second compound of Chemical Formulas 3 and 4 are used in the light emitting material layer 240 , the luminous efficiency and color purity of the organic light emitting diode D1 are further improved.

[Organic light emitting diode]

Anode (ITO, 50 nm), hole injection layer (HAT-CN (Formula 6-1), 7 nm), hole transport layer (NPB (Formula 6-2), 45 nm), electron blocking layer (TAPC (Formula 6-3) ), 10 nm), light emitting material layer (30 nm), hole blocking layer (B3PYMPM (Formula 6-4), 10 nm), electron transport layer (TPBi (Formula 6-5), 30 nm), electron injection layer (LiF ) and a cathode (Al) were sequentially stacked to fabricate an organic light emitting diode.

[Formula 6-1]

[Formula 6-2]

[Formula 6-3]

[Formula 6-4]

[Formula 6-5]

(1) Comparative Example 1 (Ref1)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-1 (30 wt%), and Compound 8-1 (1 wt%) of Formula 8.

(2) Comparative Example 2 (Ref2)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-1 (30 wt%), and Compound 8-2 (1 wt%) of Formula 8.

(3) Comparative Example 3 (Ref3)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-6 (30 wt%), and Compound 8-1 (1 wt%) of Formula 8.

(4) Comparative Example 2 (Ref4)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-6 (30 wt%), and Compound 8-2 (1 wt%) of Formula 8.

(5) Comparative Example 5 (Ref5)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-1 of Formula 9 (30 wt%), and Compound 2-1 of Formula 5 (1 wt%).

(6) Comparative Example 6 (Ref6)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-1 of Formula 9 (30 wt%), and Compound 2-10 of Formula 5 (1 wt%).

(7) Comparative Example 7 (Ref7)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-1 of Formula 9 (30 wt%), and Compound 8-1 of Formula 8 (1 wt%).

(8) Comparative Example 8 (Ref8)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-1 of Formula 9 (30 wt%), and Compound 8-2 of Formula 8 (1 wt%).

(9) Comparative Example 9 (Ref9)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-2 of Formula 9 (30 wt%), and Compound 2-1 of Formula 5 (1 wt%).

(10) Comparative Example 7 (Ref10)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 9-2 of Formula 9 (30 wt%), and Compound 8-1 of Formula 8 (1 wt%).

(11) Experimental Example 1 (Ex1)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-1 of Formula 2 (30 wt%), and Compound 2-1 of Formula 5 (1 wt%).

(12) Experimental Example 2 (Ex2)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-6 of Formula 2 (30 wt%), and Compound 2-1 of Formula 5 (1 wt%).

(13) Experimental Example 3 (Ex3)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-1 of Formula 2 (30 wt%), and Compound 2-10 of Formula 5 (1 wt%).

(14) Experimental Example 4 (Ex4)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-6 of Formula 2 (30 wt%), and Compound 2-10 of Formula 5 (1 wt%).

(15) Experimental Example 5 (Ex5)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-1 of Formula 2 (30 wt%), and Compound 2-6 of Formula 5 (1 wt%).

(16) Experimental Example 6 (Ex6)

A light emitting material layer was formed using a host (m-CBP (Formula 7), 69 wt%), Compound 1-6 of Formula 2 (30 wt%), and Compound 2-6 of Formula 5 (1 wt%).

[Formula 7]

[Formula 8]

[Formula 9]

The light emitting characteristics of the organic light emitting diodes prepared in Comparative Examples 1 to 10 and Experimental Examples 1 to 6 were measured and described in Table 1.

[Table 1]

As shown in Table 2, compared to the organic light emitting diodes of Comparative Examples 1 to 10, light emission from the organic light emitting diodes of Experimental Examples 1 to 5 using the first compound of Formula 1 and the second compound of Formula 2 Efficiency increases.

Compounds 1-1 and 1-6 of Formula 2, Compounds 2-1, 2-6, 2-10 of Formula 5, Compounds 8-1 and 8-2 of Formula 8, Compounds 9-1 and 9- of Formula 9 The HOMO energy level and the LUMO energy level of 2 were measured and described in Table 2.

[Table 2]

In the organic light emitting diodes of Experimental Examples 1 to 5, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV, and thus the luminous efficiency is improved. On the other hand, in the organic light emitting diodes of Comparative Examples 1 to 10, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is 0.3 eV or more. seems to do

6 is a schematic cross-sectional view of an organic light emitting diode according to a third embodiment of the present invention.

As shown in FIG. 6 , the organic light emitting diode D2 according to the third embodiment of the present invention has first and second electrodes 310 and 330 facing each other, and first and second electrodes 310 . , 330 includes a light emitting layer 320 positioned between. The light emitting layer 320 includes a light emitting material layer 340 . The organic light emitting display device 100 of FIG. 2 may include a red pixel area, a green pixel area, and a blue pixel area, and the organic light emitting diode D2 may be located in the blue pixel area.

The first electrode 310 may be an anode, and the second electrode 330 may be a cathode.

The light emitting layer 320 includes a hole transport layer 360 positioned between the first electrode 310 and the light emitting material layer 340 and an electron transport layer 370 positioned between the light emitting material layer 340 and the second electrode 330 . It may further include at least any one of.

In addition, the light emitting layer 320 is located between the hole injection layer 350 and the electron transport layer 370 and the second electrode 330 located between the first electrode 310 and the hole transport layer 360, the electron injection layer (330) 380) may further include at least any one of.

In addition, the light emitting layer 320 includes an electron blocking layer 365 positioned between the light emitting material layer 340 and the hole transport layer 360 and a hole blocking layer positioned between the light emitting material layer 340 and the electron transport layer 370 ( 375) may further include at least any one of.

The light-emitting material layer 340 includes a first light-emitting material layer 342 (lower light-emitting material layer (first layer)) and a second light-emitting material layer 344 (upper light-emitting material layer (second layer)) sequentially stacked. That is, the second light-emitting material layer 344 is positioned between the first light-emitting material layer 342 and the second electrode 330 .

Any one of the first light-emitting material layer 342 and the second light-emitting material layer 344 is a compound containing a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms. wherein the other one of the first light-emitting material layer 342 and the second light-emitting material layer 344 is a compound containing a hexagonal ring moiety consisting of one boron atom, one nitrogen atom, and four carbon atoms. 2 compounds.

For example, the first compound may be one of the compounds represented by Formula 1 and Formula 2 and may have delayed fluorescence properties. The second compound may be one of Chemical Formula 3, Chemical Formula 4-1, and Chemical Formula 4-2 and may be one of Chemical Formula 5 and may have fluorescence properties.

In addition, each of the first light emitting material layer 342 and the second light emitting material layer 344 may further include fourth and fifth compounds serving as hosts. The fourth compound of the first light-emitting material layer 342 and the fifth compound of the second light-emitting material layer 344 may be the same or different. For example, the host of the first light-emitting material layer 342 and the second light-emitting material layer 344 may be the above-described third compound.

Hereinafter, an organic light emitting diode in which the first light emitting material layer 342 includes the first compound will be described.

As described above, the first compound having a delayed fluorescence characteristic has high quantum efficiency, but has a wide full width at half maximum, so the color purity is not good. On the other hand, the second compound having fluorescence properties has a narrow full width at half maximum, but has low luminous efficiency because triplet exciton energy does not participate in light emission.

In the organic light emitting diode (D2) of the present invention, triplet exciton energy of the first compound in the first light emitting material layer 342 is converted to singlet exciton energy by a reverse intercalation transition (RISC) phenomenon, and the The singlet exciton energy is transferred to the singlet exciton energy level of the second compound included in the second light emitting material layer 344, and light emission occurs in the second compound. Accordingly, both the singlet exciton energy level and the triplet exciton energy level participate in light emission to improve luminous efficiency, and since light is emitted from the second compound, which is a fluorescent material, a narrow full width at half maximum is realized.

As described above, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound satisfies the condition that is less than 0.3 eV, and the luminous efficiency of the organic light emitting diode D2 is further improved.

The weight ratio of the fourth compound in the first light emitting material layer 342 may be equal to or greater than the weight ratio of the first compound. In addition, the weight ratio of the fifth compound in the second light emitting material layer 344 may be equal to or greater than the weight ratio of the second compound.

Also, a weight ratio of the first compound included in the first light-emitting material layer 342 may be greater than a weight ratio of the second compound included in the second light-emitting material layer 344 . Accordingly, energy transfer by FRET from the first compound of the first light-emitting material layer 342 to the second compound of the second light-emitting material layer 344 may sufficiently occur. For example, in the first light emitting material layer 342, the first compound may have 1 to 50 wt%, preferably 10 to 40 wt%, more preferably 20 to 40 wt%, and the second light emitting material The second compound in layer 344 may be 0.1 to 10% by weight, preferably 0.1 to 5% by weight.

When the hole blocking layer 375 is positioned between the second light emitting material layer 344 and the electron transport layer 370 , the fifth compound serving as the host of the second light emitting material layer 344 is a material of the hole blocking layer 375 . It may be the same material as In this case, the second light emitting material layer 344 may have a hole blocking function as well as a light emitting function. That is, the second light emitting material layer 344 functions as a buffer layer for blocking electrons. Meanwhile, the hole blocking layer 375 may be omitted, and in this case, the second light emitting material layer 344 is used as the light emitting material layer and the hole blocking layer.

On the other hand, when the first light emitting material layer 342 includes the second compound which is a fluorescent material and the electron blocking layer 365 is located between the hole transport layer 360 and the first light emitting material layer 342 , the first light emission The host of the material layer 342 may be the same material as the material of the electron blocking layer 365 . In this case, the first light emitting material layer 342 may have an electron blocking function as well as a light emitting function. That is, the first light emitting material layer 342 functions as a buffer layer for blocking electrons. Meanwhile, the electron blocking layer 365 may be omitted, and in this case, the first light emitting material layer 342 is used as the light emitting material layer and the electron blocking layer.

7 is a schematic cross-sectional view of an organic light emitting diode according to a fourth embodiment of the present invention.

As shown in FIG. 7 , the organic light emitting diode D3 according to the fourth embodiment of the present invention has a first electrode 410 and a second electrode 430 facing each other, and the first and second electrodes 410 , 430) and a light emitting layer 420 positioned between them. The organic light emitting diode display ( 100 of FIG. 2 ) may include a red pixel area, a green pixel area, and a blue pixel area, and the organic light emitting diode D3 may be located in the blue pixel area.

The first electrode 410 may be an anode, and the second electrode 430 may be a cathode.

The light emitting layer 420 includes a hole transport layer 460 positioned between the first electrode 410 and the light emitting material layer 440 and an electron transport layer 470 positioned between the light emitting material layer 440 and the second electrode 430 . It may further include at least any one of.

In addition, the light emitting layer 420 is located between the hole injection layer 450 and the electron transport layer 470 and the second electrode 430 located between the first electrode 410 and the hole transport layer 460, the electron injection layer (430) ( 480) may further include at least any one of.

In addition, the light emitting layer 420 includes an electron blocking layer 465 located between the light emitting material layer 440 and the hole transport layer 460 and a hole blocking layer located between the light emitting material layer 440 and the electron transport layer 470 ( 475) may further include at least any one of.

The light emitting material layer 440 includes a first light emitting material layer 442 (intermediate light emitting material layer (first layer)) and a second light emitting material layer between the first light emitting material layer 442 and the first electrode 410 ( 444 (lower light emitting material layer (second layer)) and a third light emitting material layer (446, upper light emitting material layer (third layer)) positioned between the first light emitting material layer 442 and the second electrode 430 includes That is, the light emitting material layer 440 has a triple layer structure in which the second light emitting material layer 444 , the first light emitting material layer 442 , and the third light emitting material layer 446 are sequentially stacked.

For example, the first light emitting material layer 442 is positioned between the electron blocking layer 465 and the hole blocking layer 475 , and the second light emitting material layer 444 is formed between the electron blocking layer 465 and the first It is positioned between the light emitting material layers 442 , and the third light emitting material layer 446 may be positioned between the hole blocking layer 475 and the first light emitting material layer 442 .

The first light-emitting material layer 442 includes a first compound that is a compound including a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms, and the second and third light-emitting material layers ( 444, 446) each may include a second compound, which is a compound comprising a hexagonal ring moiety consisting of one boron atom, one nitrogen atom, and four carbon atoms.

For example, the first compound may be one of the compounds represented by Formula 1 and Formula 2 and may have delayed fluorescence properties. The second compound may be one of Chemical Formula 3, Chemical Formula 4-1, and Chemical Formula 4-2 and may be one of Chemical Formula 5 and may have fluorescence properties. The second compounds of the second and third light emitting material layers 444 and 446 may be the same or different.

In addition, each of the first to third light emitting material layers 442 , 444 , and 446 may include sixth to eighth compounds serving as hosts. The sixth to eighth compounds may be the same or different. For example, the sixth to eighth compounds may be the aforementioned third compounds.

In the organic light emitting diode (D3) of the present invention, triplet exciton energy of the first compound in the first light emitting material layer 442 is converted into singlet exciton energy by a reverse intercalation transition (RISC) phenomenon, and the The singlet exciton energy is transferred to the singlet exciton energy level of the second compound included in the second and third light emitting material layers 444 and 446 , and light emission occurs in the second compound. Accordingly, both the singlet exciton energy level and the triplet exciton energy level participate in light emission to improve luminous efficiency, and since light is emitted from the second compound, which is a fluorescent material, a narrow full width at half maximum is realized.

As described above, since the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV, the luminous efficiency of the organic light emitting diode D3 is further improved.

The weight ratio of the sixth compound in the first light emitting material layer 442 may be the same as or greater than the weight ratio of the first compound, and the weight ratio of the seventh compound in the second light emitting material layer 444 is the same as the weight ratio of the second compound. or it could be larger. In addition, the weight ratio of the eighth compound in the third light emitting material layer 446 may be equal to or greater than the weight ratio of the second compound.

In addition, the weight ratio of the first compound included in the first light emitting material layer 442 is the weight ratio of the second compound included in the second light emitting material layer 444 and the weight ratio of the third light emitting material layer 446 included in each It may be greater than the weight ratio of the second compound. Accordingly, energy transfer by FRET from the first compound of the first light-emitting material layer 442 to the second compound of the second light-emitting material layer 444 and the third light-emitting material layer 446 may sufficiently occur. For example, in the first light-emitting material layer 442, the first compound may have 1 to 50 wt%, preferably 10 to 40 wt%, more preferably 20 to 40 wt%, and the second light-emitting material In each of the layer 444 and the third light emitting material layer 446, the amount of the second compound may be 0.1 to 10% by weight, preferably 0.1 to 5% by weight.

The seventh compound serving as the host of the second light emitting material layer 444 may be the same material as the electron blocking layer 465 . In this case, the second light emitting material layer 444 may have an electron blocking function as well as a light emitting function. That is, the second light emitting material layer 444 functions as a buffer layer for blocking electrons. Meanwhile, the electron blocking layer 465 may be omitted, and in this case, the second light emitting material layer 444 is used as the light emitting material layer and the electron blocking layer.

In addition, the eighth compound serving as the host of the third light emitting material layer 446 and EML3 may be the same material as the material of the hole blocking layer 475 . In this case, the third light emitting material layer 446 may have a hole blocking function as well as a light emitting function. That is, the third light emitting material layer 446 functions as a buffer layer for blocking holes. Meanwhile, the hole blocking layer 475 may be omitted, and in this case, the third light emitting material layer 446 is used as the light emitting material layer and the hole blocking layer.

In addition, the seventh compound of the second light emitting material layer 444 and EML2 is the same material as that of the electron blocking layer 465 , and the eighth compound of the third light emitting material layer 446 is the hole blocking layer 475 . It may be the same material as the material. In this case, the second light emitting material layer 444 may simultaneously have a light emitting function and an electron blocking function, and the third light emitting material layer 446 may have a light emitting function and a hole blocking function at the same time. That is, the second light-emitting material layer 444 and the third light-emitting material layer 446 may function as a buffer layer for blocking electrons and a buffer layer for blocking holes, respectively. Meanwhile, the electron blocking layer 465 and the hole blocking layer 475 may be omitted. In this case, the second light emitting material layer 444 is used as the light emitting material layer and the electron blocking layer, and the third light emitting material layer 446 ) is used as a light emitting material layer and a hole blocking layer.

8 is a schematic cross-sectional view of an organic light emitting diode according to an eighth embodiment of the present invention.

As shown in FIG. 8 , the organic light emitting diode D4 has a first electrode 510 and a second electrode 530 facing each other, and a light emitting layer positioned between the first and second electrodes 510 and 530 ( 520). The organic light emitting diode display ( 100 of FIG. 2 ) may include a red pixel area, a green pixel area, and a blue pixel area, and the organic light emitting diode D4 may be located in the blue pixel area.

The first electrode 510 may be an anode, and the second electrode 530 may be a cathode.

The first electrode 510 may be an anode, and the second electrode 530 may be a cathode.

The light emitting layer 520 includes a first light emitting part 540 including a first light emitting material layer 550 and a second light emitting part 560 including a second light emitting material layer 570 . In addition, the light emitting layer 520 may further include a charge generation layer 580 positioned between the first light emitting unit 540 and the second light emitting unit 560 .

The charge generating layer 580 is positioned between the first and second light emitting units 540 and 560 , and the first light emitting unit 540 , the charge generating layer 580 , and the second light emitting unit 560 are formed as a first electrode. It is sequentially stacked on 510 . That is, the first light emitting part 540 is positioned between the first electrode 510 and the charge generating layer 580 , and the second light emitting part 560 is located between the second electrode 530 and the charge generating layer 580 . located in

The first light emitting unit 540 includes a first light emitting material layer 550 .

In addition, the first light emitting unit 540 includes a first hole transport layer 540b positioned between the first electrode 510 and the first light emitting material layer 550 , the first electrode 510 and the first hole transport layer ( At least one of a hole injection layer 540a positioned between the 540b and a first electron transport layer 540e positioned between the first light emitting material layer 550 and the charge generating layer 580 may be further included.

In addition, the first light emitting part 540 includes the first electron blocking layer 540c, the first light emitting material layer 550 and the first hole transport layer 540b and the first light emitting material layer 550 positioned between the first light emitting material layer 550 and the first light emitting material layer 550 . At least one of the first hole blocking layers 540d positioned between the electron transport layers 540e may be further included.

The second light emitting unit 560 includes a second light emitting material layer 570 .

In addition, the second light emitting unit 560 includes a second hole transport layer 560a positioned between the charge generating layer 580 and the second light emitting material layer 570, the second light emitting material layer 570 and the second electrode ( At least one of a second electron transport layer 560d positioned between the 530 , and an electron injection layer 560e positioned between the second electron transport layer 560d and the second electrode 530 may be further included.

In addition, the second light emitting unit 560 includes a second electron blocking layer 560b, a second light emitting material layer 570 and a second located between the second hole transport layer 560a and the second light emitting material layer 570 . At least one of the second hole blocking layers 560c positioned between the electron transport layers 560d may be further included.

The charge generation layer 580 is positioned between the first light emitting part 540 and the second light emitting part 560 . That is, the first light emitting unit 540 and the second light emitting unit 560 are connected by the charge generation layer 580 . The charge generation layer 580 may be a PN junction charge generation layer in which the N-type charge generation layer 582 and the P-type charge generation layer 584 are joined.

The N-type charge generation layer 582 is positioned between the first electron transport layer 540e and the second hole transport layer 560a, and the P-type charge generation layer 584 includes the N-type charge generation layer 582 and the second hole transport layer. It is located between (560a). The N-type charge generation layer 582 transfers electrons to the first light-emitting material layer 550 of the first light-emitting unit 540 , and the P-type charge generation layer 584 transfers holes to the second light-emitting unit 560 . It is transferred to the second light emitting material layer 570 .

The first light emitting material layer 550 and the second light emitting material layer 570 are blue light emitting material layers. At least one of the first light emitting material layer 550 and the second light emitting material layer 570 , for example, the first light emitting material layer 550 may include the first compound represented by Formula 1 and the first compound represented by Formula 3 2 compounds. In addition, the first light emitting material layer 550 may further include a third compound serving as a host.

In the first light emitting material layer 550 , the weight ratio of the first compound may be greater than the weight ratio of the second compound and smaller than the weight ratio of the third compound. When the weight ratio of the first compound is greater than the weight ratio of the second compound, energy transfer from the first compound to the second compound may sufficiently occur. For example, in the first light emitting material layer 550, 20 to 40 wt% of the first compound, 0.1 to 10 wt% of the second compound, and 50 to 80 wt% of the third compound may be present, but limited thereto doesn't happen

The second light emitting material layer 570 may include a first compound represented by Formula 1 and a second compound represented by Formula 3 in the same manner as the first light emitting material layer 550 . On the other hand, the second light emitting material layer 570 includes a compound different from at least one of the first compound and the second compound of the first light emitting material layer 550 , and includes light having a wavelength different from that of the first light emitting material layer 550 . may emit light or have different luminous efficiency.

In the organic light emitting diode (D4) of the present invention, the singlet exciton energy level of the first compound, which is a delayed fluorescent material, is transferred to the second compound, which is a fluorescent material, and the second compound emits light. Accordingly, the luminous efficiency and color purity of the organic light emitting diode D4 are improved. In addition, since the first compound of Chemical Formulas 1 and 2 and the second compound of Chemical Formulas 3 to 5 are used in the first light emitting material layer 550 , the luminous efficiency and color purity of the organic light emitting diode D4 are further improved. In addition, since the organic light emitting diode D4 has a double stack structure of a blue light emitting material layer, the color of the organic light emitting diode D4 is improved or luminous efficiency is optimized.

9 is a schematic cross-sectional view of an organic light emitting display device according to a sixth embodiment of the present invention.

As shown in FIG. 9 , the organic light emitting diode display 600 includes a first substrate 610 in which first to third pixel regions P1 , P2 , and P3 are defined, and a first substrate 610 facing the first substrate 610 . The second substrate 670, the organic light emitting diode D positioned between the first substrate 610 and the second substrate 670 and emitting blue light, the organic light emitting diode D and the second substrate 670 ) and a color conversion layer 680 positioned between them. For example, the first pixel area P1 may be a blue pixel area, the second pixel area P2 may be a red pixel area, and the third pixel area P2 may be a green pixel area.

Each of the first and second substrates 610 and 670 may be a glass substrate or a flexible substrate. For example, the flexible substrate may be any one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.

The thin film transistor Tr is positioned on the first substrate 610 . Alternatively, a buffer layer (not shown) may be formed on the first substrate 610 and the thin film transistor Tr may be formed on the buffer layer.

As described with reference to FIG. 2 , the thin film transistor Tr includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and functions as a driving element.

A planarization layer 650 is positioned on the thin film transistor Tr. The planarization layer 650 has a flat top surface and has a drain contact hole 652 exposing the drain electrode of the thin film transistor Tr.

The organic light emitting diode D is located on the planarization layer 650 and includes a first electrode 660 connected to the drain electrode of the thin film transistor Tr, and a light emitting layer 662 sequentially stacked on the first electrode 660 . and a second electrode 664 .

The first electrode 660 is formed separately for each of the first to third pixel regions P1, P2, and P3, and the second electrode 664 corresponds to the first to third pixel regions P1, P2, and P3. so that it is integrally formed.

The first electrode 660 is one of an anode and a cathode, and the second electrode 664 is the other of an anode and a cathode. In addition, the first electrode 660 is a reflective electrode, and the other one of the second electrodes 664 is a transmissive electrode.

For example, the first electrode 660 may be an anode, and reflects a transparent conductive oxide layer made of a conductive material having a relatively large work function value, for example, a transparent conductive oxide (TCO). It may include an electrode (or a reflective layer). In addition, the second electrode 664 may be a cathode, and may include a conductive material having a relatively small work function value, for example, a metal material layer made of a low-resistance metal. For example, the first electrode 660 may have a triple layer structure of ITO/Ag/ITO or ITO/APC/ITO, but is not limited thereto. In addition, the second electrode 664 is made of any one of aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), or an Mg-Ag alloy and has a thin thickness to have light transmission (semi-transmission) characteristics. has

A bank layer 666 covering an edge of the first electrode 660 is formed on the planarization layer 650 . The bank layer 666 exposes the center of the first electrode 660 in correspondence with each of the first to third pixel regions P1 , P2 , and P3 . Since the organic light emitting diode D emits white light in the first to third pixel regions P1, P2, and P3, the emission layer 662 is separated from the first to third pixel regions P1, P2, and P3. It can be formed as a common layer without need. The bank layer 666 is formed to prevent current leakage from the edge of the first electrode 660 , and the bank layer 666 may be omitted.

A light emitting layer 662 that is a light emitting unit is formed on the first electrode 660 . For example, the light emitting layer 662 has one of the structures shown in FIGS. 3 and 6 to 8 and emits blue light. That is, the organic light emitting diode D emits blue light in the first to third pixel regions P1 , P2 , and P3 .

The color conversion layer 680 includes a first color conversion layer 682 corresponding to the second pixel area P2 and a second color conversion layer 684 corresponding to the third pixel area P3 . The first color conversion layer 682 may be a red color conversion layer, and the second color conversion layer 684 may be a green color conversion layer. For example, the color conversion layer 680 may be made of an inorganic light emitting material such as quantum dots.

In the second pixel region P2 , blue light from the organic light emitting diode D is converted into red light by the first color conversion layer 682 , and in the third pixel region P3 , from the organic light emitting diode D The blue light of is converted into green light by the second color conversion layer 684 .

Accordingly, the organic light emitting display device 600 may implement a color image.

Meanwhile, when the organic light emitting display device 600 is a bottom light emitting type, the color conversion layer 680 may be provided between the organic light emitting diode D and the first substrate 610 .

Although not shown, the organic light emitting diode display 600 may further include a color filter layer positioned between the second substrate 670 and the color conversion layer 680 . In this case, the color purity of the organic light emitting display device 600 may be further improved. On the other hand, when the organic light emitting display device 600 is a top light emitting type, the color filter layer is positioned between the first substrate 610 and the color conversion layer 680 .

10 is a schematic cross-sectional view of an organic light emitting display device according to a seventh exemplary embodiment of the present invention.

As shown in FIG. 10 , the organic light emitting diode display 1000 includes a substrate 1010 on which first to third pixel regions P1 , P2 , and P3 are defined, and a thin film transistor positioned on the substrate 1010 ( Tr) and an organic light emitting diode D5 positioned above the thin film transistor Tr and connected to the thin film transistor Tr. For example, the first pixel area P1 may be a blue pixel area, the second pixel area P2 may be a red pixel area, and the third pixel area P3 may be a green pixel area.

The substrate 1010 may be a glass substrate or a flexible substrate. For example, the flexible substrate may be any one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.

A buffer layer 1012 is formed on the substrate 1010 , and a thin film transistor Tr is formed on the buffer layer 1012 . The buffer layer 1012 may be omitted.

As described with reference to FIG. 2 , the thin film transistor Tr includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and functions as a driving element.

A planarization layer 1050 is positioned on the thin film transistor Tr. The planarization layer 1050 has a flat top surface and has a drain contact hole 1052 exposing the drain electrode of the thin film transistor Tr.

The organic light emitting diode D5 is positioned on the planarization layer 1050 and includes a first electrode 1060 connected to the drain electrode of the thin film transistor Tr, and a light emitting layer 1062 sequentially stacked on the first electrode 1060 . and a second electrode 1064 . The organic light emitting diode D5 is positioned in each of the first to third pixel regions P1 , P2 , and P3 and emits light of different colors. For example, the organic light emitting diode D5 of the first pixel region P1 emits blue light, the organic light emitting diode D5 of the second pixel region P2 emits red light, and the third pixel region The organic light emitting diode D5 of (P3) may emit green light.

The first electrode 1060 is formed separately for each of the first to third pixel regions P1, P2, and P3, and the second electrode 1064 corresponds to the first to third pixel regions P1, P2, and P3. so that it is integrally formed.

The first electrode 1060 may be one of an anode and a cathode, and the second electrode 1064 may be the other of an anode and a cathode. In addition, one of the first electrode 1060 and the second electrode 1064 may be a transmissive electrode (or a transflective electrode), and the other of the first electrode 1060 and the second electrode 1064 may be a reflective electrode. .

For example, the first electrode 1060 may be an anode, and includes a transparent conductive oxide layer made of a conductive material having a relatively high work function value, for example, a transparent conductive oxide (TCO). can do. In addition, the second electrode 1064 may be a cathode, and may include a metal material layer made of a conductive material having a relatively small work function value, for example, a low-resistance metal. For example, the transparent conductive oxide layer of the first electrode 1060 may include indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-oxide (IZO). indium-tin-zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO) and aluminum:zinc oxide (Al:ZnO; AZO), and the second electrode 1064 is aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), or an alloy thereof, for example, an Mg-Ag alloy or a combination thereof. can be made with

When the organic light emitting display device 1000 of the present invention is a bottom light emitting type, the first electrode 1060 may have a single layer structure of a transparent conductive oxide layer.

Meanwhile, when the organic light emitting diode display 1000 of the present invention is a top emission type, a reflective electrode or a reflective layer may be further formed under the first electrode 1060 . For example, the reflective electrode or the reflective layer may be made of silver or an aluminum-palladium-copper (APC) alloy. In the top emission type organic light emitting diode D5, the first electrode 1060 may have a triple layer structure of ITO/Ag/ITO or ITO/APC/ITO. Also, the second electrode 1064 may have a light-transmitting (semi-transmissive) characteristic due to a thin thickness.

A bank layer 1066 covering an edge of the first electrode 1060 is formed on the planarization layer 1050 . The bank layer 1066 exposes the center of the first electrode 1060 corresponding to each of the first to third pixel regions P1 , P2 , and P3 .

A light emitting layer 1062 serving as a light emitting unit is formed on the first electrode 1060 . The emission layer 1062 may have a single-layer structure of the emission material layer EML. In contrast, the light emitting layer 1062 includes a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL) sequentially stacked between the first electrode 1060 and the light emitting material layer, and the light emitting material layer and the second light emitting material layer. At least one of a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL) sequentially stacked between the two electrodes 1064 may be further included.

In the first pixel region P1 that is the blue pixel region, the emission material layer of the emission layer 1062 includes a first compound that is a fluorescent material and a second compound that is a delayed fluorescent material. In addition, the light emitting material layer of the light emitting layer 1062 may further include a third compound serving as a host. In this case, the first compound is represented by Formula 1, and the second compound is represented by Formula 3.

An encapsulation film 1070 is formed on the second electrode 1064 to prevent external moisture from penetrating into the organic light emitting diode D5. The encapsulation film 1070 may have a triple-layer structure of a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer, but is not limited thereto.

The organic light emitting display device 1000 may further include a polarizing plate (not shown) for reducing reflection of external light. For example, the polarizing plate (not shown) may be a circular polarizing plate. When the organic light emitting display device 1000 is a bottom light emitting type, the polarizing plate may be positioned under the substrate 1010 . On the other hand, when the organic light emitting display device 1000 of the present invention is a top emission type, the polarizing plate may be located on the encapsulation film 1070 .

11 is a schematic cross-sectional view of an organic light emitting diode according to an eighth embodiment of the present invention.

Referring to FIG. 11 together with FIG. 10 , the organic light emitting diode D5 is positioned in each of the first to third pixel regions P1, P2, and P3, and the first electrode 1060 and the second electrode ( 1064 , and a light emitting layer 1062 positioned between the first and second electrodes 1060 and 1064 . The light emitting layer 1062 includes a light emitting material layer 1090 .

The first electrode 1060 may be an anode, and the second electrode 1064 may be a cathode. For example, the first electrode 1060 may be a reflective electrode, and the second electrode 1064 may be a transmissive electrode (semi-transmissive electrode).

The light emitting layer 1062 is a hole transport layer (HTL, 1082) positioned between the first electrode 1060 and the light emitting material layer 1090 and an electron transport layer positioned between the light emitting material layer 1090 and the second electrode 1064 ( ETL, 1094) may further include at least one.

In addition, the light emitting layer 1090 is disposed between the hole injection layer (HIL, 1080) and the electron transport layer (ETL, 1094) positioned between the first electrode 1060 and the hole transport layer (HTL, 1082) and the second electrode (1064). At least one of the positioned electron injection layers (EIL, 1096) may be further included.

In addition, the light emitting layer 1090 is an electron blocking layer (EBL, 1086) positioned between the light emitting material layer 1090 and the hole transport layer (HTL, 1082) and the light emitting material layer 1090 and the electron transport layer (ETL, 1094) between. It may further include at least one of the hole blocking layers (HBL, 1092) positioned.

In addition, the light emitting layer 1062 may further include an auxiliary hole transport layer 1084 positioned between the hole transport layer (HTL, 1082) and the electron blocking layer (EBL, 1086). The auxiliary hole transport layer 1084 includes a first auxiliary hole transport layer 1084a positioned in the first pixel region P1 , a second auxiliary hole transport layer 1084b positioned in the second pixel region P2 , and a third pixel and a third auxiliary hole transport layer 1084c located in the region P3.

The first auxiliary hole transport layer 1084a has a first thickness, the second auxiliary hole transport layer 1084b has a second thickness, and the third auxiliary hole transport layer 1084c has a third thickness. In this case, the third thickness is smaller than the second thickness and larger than the first thickness, and accordingly, the organic light emitting diode D5 has a micro-cavity structure.

That is, the first electrode 1060 in the third pixel region P3 emitting light (green) in the third wavelength range by the first to third auxiliary hole transport layers 1084a, 1084b, and 1084c having different thicknesses. ) and the second electrode 1064 is between the first electrode 1060 and the second electrode 1064 in the second pixel region P2 that emits light (red) in a second wavelength range greater than the first wavelength range. The distance between the first electrode 1060 and the second electrode 1064 is greater than the distance between the first electrode 1060 and the second electrode 1064 in the first pixel region P1 that emits light (blue) in the first wavelength range smaller than the distance and smaller than the third wavelength range. Accordingly, the luminous efficiency of the organic light emitting diode D5 is improved.

In FIG. 11 , a first auxiliary hole transport layer 1084a is formed in the first pixel region P1 . Alternatively, a micro-cavity structure may be implemented without the first auxiliary hole transport layer 1084a.

In addition, a capping layer (not shown) for improving light extraction may be additionally formed on the second electrode 1064 .

The light emitting material layer 1090 includes a first light emitting material layer 1090a positioned in the first pixel region P1 , a second light emitting material layer 1090b positioned in the second pixel region P2 , and a third pixel and a third light emitting material layer 1090c positioned in the region P3. Each of the first light-emitting material layer 1090a, the second light-emitting material layer 1090b, and the third light-emitting material layer 1090c may be a blue light-emitting material layer, a red light-emitting material layer, and a green light-emitting material layer.

The first light emitting material layer 1090a of the first pixel region P1 includes a first compound that is a fluorescent material and a second compound that is a delayed fluorescent material. In addition, the first light emitting material layer 1090a of the first pixel region P1 may further include a third compound serving as a host. In this case, the first compound is represented by Formula 1, and the second compound is represented by Formula 3.

In the first light emitting material layer 1090a of the first pixel region P1 , the weight ratio of the first compound may be greater than the weight ratio of the second compound and smaller than the weight ratio of the third compound. When the weight ratio of the first compound is greater than the weight ratio of the second compound, energy transfer from the first compound to the second compound may sufficiently occur.

For example, in the first light emitting material layer 1090a of the first pixel region P1, 20 to 40 wt% of the first compound, 0.1 to 10 wt% of the second compound, and 50 to 80 wt% of the third compound %, but is not limited thereto.

Each of the second light-emitting material layer 1090b of the second pixel area P2 and the second light-emitting material layer 1090c of the third pixel area P2 may include a host and a dopant. For example, in each of the second light-emitting material layer 1090b of the second pixel area P2 and the second light-emitting material layer 1090c of the third pixel area P2, the dopant is a phosphorescent compound, a fluorescent compound, or delayed fluorescence. at least one of the compounds.

The organic light emitting diode D5 of FIG. 11 emits green light, red light, and blue light from each of the first to third pixel regions P1, P2, and P3, and thus the organic light emitting diode display device (1000 of FIG. 9 ) emits light. ) can implement a color image.

Meanwhile, the organic light emitting display device 1000 may further include a color filter layer corresponding to the first to third pixel regions P1 , P2 , and P3 to improve color purity. For example, the color filter layer may include a first color filter layer (blue color filter layer) corresponding to the first pixel region P1, a second color filter layer (red color filter layer) corresponding to the second pixel region P2, and a third pixel. A third color filter layer (a green color filter layer) corresponding to the region P3 may be included.

When the organic light emitting display device 1000 is a bottom light emitting type, the color filter layer may be positioned between the organic light emitting diode D5 and the substrate 1010 . On the other hand, when the organic light emitting diode display 1000 of the present invention is a top emission type, the color filter layer may be located on the organic light emitting diode D5.

12 is a schematic cross-sectional view of an organic light emitting display device according to a ninth embodiment of the present invention.

12 , the organic light emitting diode display 1100 includes a substrate 1110 in which first to third pixel regions P1 , P2 , and P3 are defined, and a thin film transistor ( Tr), an organic light emitting diode D positioned on the thin film transistor Tr and connected to the thin film transistor Tr, and a color filter layer 1120 corresponding to the first to third pixel regions P1, P2, and P3. ) is included. For example, the first pixel area P1 may be a blue pixel area, the second pixel area P2 may be a red pixel area, and the third pixel area P3 may be a green pixel area.

The substrate 1110 may be a glass substrate or a flexible substrate. For example, the flexible substrate may be any one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.

The thin film transistor Tr is positioned on the substrate 1110 . Alternatively, a buffer layer (not shown) may be formed on the substrate 1110 and the thin film transistor Tr may be formed on the buffer layer.

As described with reference to FIG. 2 , the thin film transistor Tr includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and functions as a driving element.

In addition, the color filter layer 1120 is positioned on the substrate 1110 . For example, the color filter layer 1120 includes a first color filter layer 1122 corresponding to the first pixel region P1 , a second color filter layer 1124 corresponding to the second pixel region P2 , and a third pixel region. A third color filter layer 1126 corresponding to (P3) may be included. The first color filter layer 1122 may be a blue color filter layer, the second color filter layer 1124 may be a red color filter layer, and the third color filter layer 1126 may be a green color filter layer. For example, the first color filter layer 1122 includes at least one of a blue dye and a blue pigment, and the second color filter layer 1124 includes at least one of a red dye and a red pigment, The third color filter layer 1126 may include at least one of a green dye and a green pigment.

A planarization layer 1150 is positioned on the thin film transistor Tr and the collimator layer 1120 . The planarization layer 1150 has a flat top surface and has a drain contact hole 1152 exposing the drain electrode of the thin film transistor Tr.

The organic light emitting diode D is positioned on the planarization layer 1150 and corresponds to the color filter layer 1120 . The organic light emitting diode D includes a first electrode 1160 connected to the drain electrode of the thin film transistor Tr, and a light emitting layer 1162 and a second electrode 1164 sequentially stacked on the first electrode 1160 . do. The organic light emitting diode D emits white light in the first to third pixel regions P1 , P2 , and P3 .

The first electrode 1160 is formed separately for each of the first to third pixel regions P1, P2, and P3, and the second electrode 1164 corresponds to the first to third pixel regions P1, P2, and P3. so that it is integrally formed.

The first electrode 1160 may be one of an anode and a cathode, and the second electrode 1164 may be the other one of an anode and a cathode. Also, the first electrode 1160 is a transmissive electrode, and the second electrode 1164 is a reflective electrode.

For example, the first electrode 1160 may be an anode, and may include a conductive material having a relatively high work function value, for example, a transparent conductive oxide layer made of a transparent conductive oxide. In addition, the second electrode 1164 may be a cathode, and may include a conductive material having a relatively small work function value, for example, a metal material layer made of a low-resistance metal. For example, the transparent conductive oxide layer of the first electrode 1160 may include indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-oxide- indium-tin-zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO) and aluminum:zinc oxide (Al:ZnO; AZO), and the second electrode 1164 is aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), or an alloy thereof, for example, an Mg-Ag alloy or a combination thereof. can be made with

A light emitting layer 1162 that is a light emitting unit is formed on the first electrode 1160 . The light emitting layer 1162 includes at least two light emitting units that emit light of different colors. Each of the light emitting units may have a single-layer structure of the light emitting material layer EML. In contrast, each of the light emitting units includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). may include more. In addition, the light emitting layer 1162 may further include a charge generation layer (CGL) positioned between the light emitting units.

In this case, one light emitting material layer (EML) of the at least two light emitting units includes the first compound represented by Formula 1 and the second compound represented by Formula 3 . That is, one light emitting material layer EML among the at least two light emitting units includes a delayed fluorescent material and a fluorescent material. In addition, one light emitting material layer (EML) among the at least two light emitting units may further include a third compound serving as a host.

A bank layer 1166 covering an edge of the first electrode 1160 is formed on the planarization layer 1150 . The bank layer 1166 exposes the center of the first electrode 1160 corresponding to each of the first to third pixel regions P1 , P2 , and P3 . As described above, since the organic light emitting diode D emits white light in the first to third pixel regions P1, P2, and P3, the light emitting layer 1162 is formed in the first to third pixel regions P1, P2, and P3. It can be formed as a common layer without having to be separated in P3). The bank layer 1166 is formed to prevent current leakage at the edge of the first electrode 1160 , and the bank layer 1166 may be omitted.

Although not shown, the organic light emitting diode display 1100 further includes an encapsulation film (not shown) positioned on the second electrode 1164 to prevent external moisture from penetrating into the organic light emitting diode D. can do. In addition, the organic light emitting display device 1100 may further include a polarizing plate positioned under the substrate 1110 to reduce reflection of external light.

In the organic light emitting diode display 1100 of FIG. 12 , the first electrode 1160 is a transmissive electrode, the second electrode 1164 is a reflective electrode, and the color filter layer 1120 includes a substrate 1110 and an organic light emitting diode (D). located between That is, the organic light emitting display device 1100 is a bottom light emitting type.

In contrast, in the organic light emitting display device 1100 , the first electrode 1160 is a reflective electrode, the second electrode 1164 is a transmissive electrode (a transflective electrode), and the color filter layer 1120 is an organic light emitting diode (D). It may be located at the top.

In the organic light emitting diode display 1100 , the organic light emitting diodes D of the first to third pixel regions P1 , P2 and P3 emit white light, and the first to third color filter layers 1122 , 1124 , and 1126 . ), blue, red, and green colors are respectively displayed in the first to third pixel areas P1 , P2 , and P3 .

Although not shown, a color conversion layer may be provided between the organic light emitting diode D and the color filter layer 1120 . The color conversion layer includes a blue color conversion layer, a red color conversion layer, and a green color conversion layer corresponding to each of the first to third pixel regions P1, P2, and P3, and includes white light from the organic light emitting diode (D). can be converted to blue, red and green respectively. For example, the color conversion layer may include quantum dots. Accordingly, color purity and/or light efficiency of the organic light emitting diode display 1100 may be further improved.

Also, a color conversion layer may be included instead of the color filter layer 1120 .

13 is a schematic cross-sectional view of an organic light emitting diode according to a tenth embodiment of the present invention.

As shown in FIG. 13, the organic light emitting diode D6 has a first electrode 1160 and a second electrode 1164 facing each other, and a light emitting layer positioned between the first and second electrodes 1160 and 1164 ( 1162).

The first electrode 1160 may be an anode, and the second electrode 1164 may be a cathode. For example, the first electrode 1160 may be a transmissive electrode, and the second electrode 1164 may be a reflective electrode.

The light emitting layer 1162 includes a first light emitting part 1210 including a first light emitting material layer 1220 , a second light emitting part 1230 including a second light emitting material layer 1240 , and a third light emitting material layer. and a third light emitting unit 1250 including 1260 . In addition, the light emitting layer 1162 includes a first charge generation layer 1270 positioned between the first light emitting unit 1210 and the second light emitting unit 1230 , the second light emitting unit 1230 and the third light emitting unit 1250 . ) may further include a second charge generation layer 1280 positioned between them.

The first charge generating layer 1270 is positioned between the first and second light emitting units 1210 and 1230 , and the second charge generating layer 1280 is positioned between the second and third light emitting units 1230 and 1250 . do. That is, the third light emitting unit 1250 , the second charge generating layer 1280 , the second light emitting unit 1230 , the first charge generating layer 1270 , and the first light emitting unit 1210 are formed by the first electrode 1160 . are sequentially stacked on top. That is, the first light emitting unit 1210 is positioned between the second electrode 1164 and the first charge generating layer 1270 , and the second light emitting unit 1230 is disposed between the first charge generating layer 1270 and the second charge. It is located between the generation layer 1280 , and the third light emitting part 1250 is located between the second charge generation layer 1280 and the first electrode 1160 .

The first light emitting unit 1210 includes a first hole transport layer 1210a positioned below the first light emitting material layer 1220, a first electron transport layer 1210b sequentially stacked on the first light emitting material layer 1220, and An electron injection layer 1210c may be further included. That is, the first hole transport layer 1210a is positioned between the first light emitting material layer 1220 and the first charge generation layer 1270 , and the first electron transport layer 1210b and the electron injection layer 1210c are formed of the first light emitting material. It is located between the layer 1220 and the second electrode 1164 .

In addition, the first light emitting unit 1210 includes an electron blocking layer (not shown) positioned between the first hole transport layer 1210a and the first light emitting material layer 1220 , the first electron transport layer 1210b and the first light emitting material. A hole blocking layer (not shown) positioned between the layers 1220 may be further included.

The second light emitting unit 1230 may further include a second hole transport layer 1230a under the second light emitting material layer 1240 and a second electron transport layer 1230b over the second light emitting material layer 1240 . That is, the second hole transport layer 1230a is positioned between the second light emitting material layer 1240 and the second charge generation layer 1280 , and the second electron transport layer 1230b is formed between the second light emitting material layer 1240 and the first light emitting material layer 1240 . It is located between the charge generation layers 1270 .

In addition, the second light emitting unit 1230 includes an electron blocking layer (not shown) positioned between the second hole transport layer 1230a and the second light emitting material layer 1240, the second electron transport layer 1230b and the second light emitting material. A hole blocking layer (not shown) positioned between the layers 1240 may be further included.

The third light emitting unit 1250 includes a hole injection layer 1250a and a third hole transport layer 1250b positioned under the third light emitting material layer 1260 and a third electron positioned on the third light emitting material layer 1260 . A transport layer 1250c may be further included. That is, the hole injection layer 1250a and the third hole transport layer 1250b are located between the first electrode 1160 and the third light emitting material layer 1260, and the third electron transport layer 1250c is the third light emitting material layer ( 1260 ) and the second charge generation layer 1280 .

In addition, the third light emitting unit 1250 includes an electron blocking layer (not shown) positioned between the third hole transport layer 1250a and the third light emitting material layer 1260, the third electron transport layer 1250c, and the third light emitting material. A hole blocking layer (not shown) positioned between the layers 1260 may be further included.

One of the first to third light-emitting material layers 1220, 1240, and 1260 is a blue light-emitting material layer, and the other of the first to third light-emitting material layers 1220, 1240, and 1260 is a blue light-emitting material layer, The remainder of the first to third light emitting material layers 1220 , 1240 , and 1260 may be a green light emitting material layer.

For example, the first light emitting material layer 1220 may be a blue light emitting material layer, the second light emitting material layer 1240 may be a green light emitting material layer, and the third light emitting material layer 1260 may be a red light emitting material layer. Alternatively, the first light emitting material layer 1220 may be a blue light emitting material layer, the second light emitting material layer 1240 may be a red light emitting material layer, and the third light emitting material layer 1260 may be a green light emitting material layer.

The first light emitting material layer 1220 includes a first compound which is a delayed fluorescent material and a second compound which is a fluorescent material. In addition, the first light emitting material layer 1220 may further include a third compound serving as a host. In this case, the first compound is represented by Formula 1, and the second compound is represented by Formula 3.

In the first light emitting material layer 1220 , the weight ratio of the second compound may be greater than the weight ratio of the first compound and smaller than the weight ratio of the third compound. When the weight ratio of the second compound is greater than the weight ratio of the first compound, energy transfer from the second compound to the first compound may sufficiently occur. For example, in the first light emitting material layer 1220, 20 to 40 wt% of the first compound, 0.1 to 10 wt% of the second compound, and 50 to 80 wt% of the third compound may be present, but limited thereto doesn't happen

The second light emitting material layer 1240 includes a host and a green dopant (or a red dopant), and the third light emitting material layer 1260 includes a host and a red dopant (or a green dopant). For example, in each of the second light emitting material layer 1240 and the third light emitting material layer 1260 , the dopant may include at least one of a phosphorescent compound, a fluorescent compound, and a delayed fluorescent compound.

The organic light emitting diode D6 emits white light in all of the first to third pixel regions (P1, P2, and P3 in FIG. 12), and a color filter layer ( By passing through 1120 of FIG. 12 , the organic light emitting display device ( 1100 of FIG. 12 ) may implement a color image.

14 is a schematic cross-sectional view of an organic light emitting diode according to an eleventh embodiment of the present invention.

14, the organic light emitting diode D7 has a first electrode 1360 and a second electrode 1364 facing each other, and a light emitting layer positioned between the first and second electrodes 1360 and 1364 ( 1362).

The first electrode 1360 may be an anode, and the second electrode 1364 may be a cathode. For example, the first electrode 1360 may be a transmissive electrode, and the second electrode 1364 may be a reflective electrode.

The light emitting layer 1362 includes a first light emitting part 1410 including a first light emitting material layer 1420 , a second light emitting part 1430 including a second light emitting material layer 1440 , and a third light emitting material layer. A third light emitting unit 1450 including 1460 is included. In addition, the light emitting layer 1362 includes a first charge generation layer 1470 positioned between the first light emitting unit 1410 and the third light emitting unit 1450 , and the second light emitting unit 1430 and the third light emitting unit 1450 . ) may further include a second charge generation layer 1480 positioned between them.

The first charge generating layer 1470 is positioned between the first and third light emitting parts 1410 and 1450 , and the second charge generating layer 1480 is positioned between the second and third light emitting parts 1430 and 1450 . do. That is, the second light emitting unit 1430 , the second charge generating layer 1480 , the third light emitting unit 1450 , the first charge generating layer 1470 , and the first light emitting unit 1410 are connected to the first electrode 1360 . are sequentially stacked on top. That is, the first light emitting unit 1410 is positioned between the second electrode 1364 and the first charge generating layer 1470 , and the second light emitting unit 1430 is formed between the second charge generating layer 1480 and the first electrode. 1160 , and the third light emitting part 1450 is positioned between the first charge generation layer 1470 and the second charge generation layer 1480 .

The first light emitting unit 1410 includes a first hole transport layer 1410a positioned below the first light emitting material layer 1420, a second electron transport layer 1410b sequentially stacked on the first light emitting material layer 1420, and An electron injection layer 1410c may be further included. That is, the first hole transport layer 1410a is located between the first light emitting material layer 1420 and the first charge generation layer 1470 , and the first electron transport layer 1410b and the electron injection layer 1410c are the first light emitting material It is located between the layer 1420 and the second electrode 1364 .

In addition, the first light emitting unit 1410 includes an electron blocking layer (not shown) positioned between the first hole transport layer 1410a and the first light emitting material layer 1420, the first electron transport layer 1410b, and the first light emitting material. A hole blocking layer (not shown) positioned between the layers 1420 may be further included.

The second light emitting part 1430 is a second electron positioned on the hole injection layer 1430a and the second hole transport layer 1430b and the second light emitting material layer 1440 positioned below the second light emitting material layer 1440 . A transport layer 1430c may be further included. That is, the hole injection layer 1430a and the second hole transport layer 1430b are positioned between the first electrode 1360 and the second light emitting material layer 1440, and the second electron transport layer 1430c is the second light emitting material layer ( 1440) and the second charge generation layer 1480 .

In addition, the second light emitting unit 1430 includes an electron blocking layer (not shown) positioned between the second hole transport layer 1430b and the second light emitting material layer 1440 , the second electron transport layer 1430c and the second light emitting material. A hole blocking layer (not shown) positioned between the layers 1440 may be further included.

The third light emitting unit 1450 further includes a third hole transport layer 1450a positioned below the third light emitting material layer 1460 and a third electron transport layer 1450b positioned above the third light emitting material layer 1460 . can do. That is, the third hole transport layer 1450a is positioned between the second charge generating layer 1480 and the third light emitting material layer 1460 , and the third electron transport layer 1450b is formed between the first charge generating layer 1470 and the third It is positioned between the light emitting material layers 1460 .

In addition, the third light emitting unit 1450 includes an electron blocking layer (not shown) positioned between the third hole transport layer 1450a and the third light emitting material layer 1460, the third electron transport layer 1450b, and the third light emitting material. A hole blocking layer (not shown) positioned between the layers 1460 may be further included.

Each of the first and second light emitting material layers 1420 and 1440 is a blue light emitting material layer. At least one of the first and second light-emitting material layers 1420 and 1440, for example, the first light-emitting material layer 1420 includes the first compound of Formula 1 and the second compound of Formula 3. In addition, the first light emitting material layer 1420 may further include a third compound serving as a host.

In the first light emitting material layer 1420 , the weight ratio of the first compound may be greater than the weight ratio of the second compound and smaller than the weight ratio of the third compound. When the weight ratio of the first compound is greater than the weight ratio of the second compound, energy transfer from the first compound to the second compound may sufficiently occur.

For example, in the first light emitting material layer 1420, 20 to 40 wt% of the first compound, 0.1 to 10 wt% of the second compound, and 50 to 80 wt% of the third compound may be present, but limited thereto doesn't happen

The second light emitting material layer 1440 may include a first compound represented by Formula 1 and a second compound represented by Formula 3 in the same manner as the first light emitting material layer 1420 . On the other hand, the second light emitting material layer 1440 includes a compound different from at least one of the first compound and the second compound of the first light emitting material layer 1420 and includes light having a wavelength different from that of the first light emitting material layer 1420 . may emit light or have different luminous efficiency.

The third light-emitting material layer 1460 includes a lower light-emitting material layer 1460a and an upper light-emitting material layer 1460b. That is, the lower light-emitting material layer 1460a is located close to the first electrode 1360 , and the upper light-emitting material layer 1420b is located close to the second electrode 1364 .

One of the lower light-emitting material layer 1460a and the upper light-emitting material layer 1460b of the third light-emitting material layer 1460 is a green light-emitting material layer, and the lower light-emitting material layer 1460a of the third light-emitting material layer 1460 and The other of the upper light-emitting material layers 1460b may be a red light-emitting material layer. That is, the third light-emitting material layer 1460 is formed by successively stacking the green light-emitting material layer and the red light-emitting material layer.

Each of the lower light-emitting material layer 1460a and the upper light-emitting material layer 1460b of the third light-emitting material layer 1460 includes a host and a dopant. In each of the lower light-emitting material layer 1460a and the upper light-emitting material layer 1460b of the third light-emitting material layer 1460 , the dopant may include at least one of a phosphorescent compound, a fluorescent compound, and a delayed fluorescent compound.

Alternatively, the third light emitting material layer 1460 may have a single-layer structure of a yellow-green light emitting material layer.

The organic light emitting diode D7 emits white light in all of the first to third pixel regions (P1, P2, and P3 in FIG. 12), and a color filter layer ( By passing through 1120 of FIG. 12 , the organic light emitting display device ( 1100 of FIG. 12 ) may implement a color image.

In FIG. 14 , the organic light emitting diode D7 has a triple stack structure including the first and second light emitting material layers 1420 and 1440 that are blue light emitting material layers. Alternatively, any one of the first and second light emitting material layers 1420 and 1440 may be omitted, and the organic light emitting diode D7 may have a double stack structure.

In the above, the present invention has been described based on exemplary embodiments and examples of the present invention, but the present invention is not limited to the technical ideas described in the above embodiments and examples. Rather, those skilled in the art to which the present invention pertains can easily propose various modifications and changes based on the above-described embodiments and examples. However, it is clear from the appended claims that all such modifications and variations are within the scope of the present invention.

100, 1000, 1100: organic light emitting display device
210, 310, 410, 510, 1060, 1160, 1360: first electrode
220, 320, 420, 520, 1062, 1162, 1362: light emitting layer
230, 330, 430, 530, 1064, 1164, 1364: second electrode
240, 340, 440, 550, 570, 1090, 1220, 1240, 1260, 1420, 1440, 1460: light emitting material layer
D, D1, D2, D3, D4, D5, D6, D7: organic light emitting diode

Claims (12)

a first electrode;
a second electrode facing the first electrode;
A light emitting material layer comprising the first and second compounds and positioned between the first and second electrodes,
The first compound is a compound comprising a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms, and the second compound contains one boron atom, one nitrogen atom, and four carbon atoms. An organic light emitting diode, which is a compound comprising a hexagonal ring moiety consisting of.
a first electrode;
a second electrode facing the first electrode;
A light emitting material layer comprising a first light emitting material layer and a second light emitting material layer and positioned between the first and second electrodes,
The first light emitting material layer comprises a first compound,
The second light-emitting material layer is positioned between the first light-emitting material layer and the first electrode and includes a second compound,
The first compound is a compound comprising a hexagonal ring moiety consisting of one boron atom, one oxygen atom, and four carbon atoms, and the second compound includes one boron atom, one nitrogen atom, and four carbon atoms. An organic light emitting diode, which is a compound comprising a hexagonal ring moiety consisting of.
3. The method according to claim 1 or 2,
The 1 compound is represented by the following formula (1),
[Formula 1]

,
R1 and R2 each is independently hydrogen, deuterium, tritium, halogen, silyl group, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6~ It is selected from the C30 arylamine group, R3 is an organic light emitting diode, characterized in that selected from C5 to C60 heteroaryl group containing nitrogen.
4. The method of claim 3,
The first compound is an organic light emitting diode, characterized in that one of the material of formula (2).
[Formula 2]

3. The method according to claim 1 or 2,
The second compound is represented by the following formula (3),
[Formula 3]

,
each of R11 to R14 is independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 selected from the arylamine group of or two adjacent to each other to form a condensed ring having boron and nitrogen,
R15 to R18 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 An organic light emitting diode, characterized in that selected from the arylamine group.
6. The method of claim 5,
Formula 3 is represented by the following Formula 4-1 or Formula 4-2,
[Formula 4-1]

,
[Formula 4-2]

,
In Formula 4-1, R15 to R18 and R21 to R24 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 arylamine group,
In Formula 4-2, R15 to R18 and R31 to R34 are each independently hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl group, C6 to C30 aryl group, C5 to C30 heteroaryl group, C1 to C20 alkylamine group, C6 to C30 organic light emitting diode, characterized in that selected from the arylamine group.
6. The method of claim 5,
The second compound is an organic light emitting diode, characterized in that one of the material of formula (5).
[Formula 5]

3. The method according to claim 1 or 2,
The organic light emitting diode, characterized in that the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV.
The method of claim 1,
The weight % of the first compound is an organic light emitting diode, characterized in that greater than the weight % of the second compound.
3. The method of claim 2,
The organic light emitting diode, characterized in that the weight % of the first compound in the first light emitting material layer is greater than the weight% of the second compound in the second light emitting material layer.
3. The method of claim 2,
The light emitting material layer comprises the second compound and further comprises a third light emitting material layer positioned between the first electrode and the first light emitting material layer.
a substrate;
The organic light emitting diode of claim 1 or 2 positioned on the substrate
An organic light emitting device comprising a.

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