KR20210065582A - 열전도도를 통한 질화붕소 나노물질의 고분자 수지 내 분산 균일도 평가 방법 - Google Patents
열전도도를 통한 질화붕소 나노물질의 고분자 수지 내 분산 균일도 평가 방법 Download PDFInfo
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 261
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
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- G01N30/66—Thermal conductivity detectors
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0648—After-treatment, e.g. grinding, purification
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Abstract
Description
도 2는 본 발명의 실시예에서 (좌) 분산제를 사용한 경우 및 (우) 분산제를 사용하지 않은 경우의 질화붕소 나노물질의 분산 균일도를 표시하고 흡착된 분산제에 의해 열전도도가 감소하는 것을 도식화한 개념도이다.
도 3은 본 발명의 실시예에 의해 제조된 육방정계 질화붕소 나노물질과 에폭시 복합체에 분산제(DA: dispersing agent)를 넣은 경우 (속이 빈 붉은 원)와 넣지 않은 경우(채워진 검은 점)의 열전도도 변화 추이를 보여주는 그래프로 분산제가 질화붕소 나노물질 표면에 흡착되어 분산성은 높아지지만 흡착된 분산제로 인해 질화붕소 나노물질간의 접촉 시 열전도 베리어로 작용하여 열전도도가 감소함을 나타낸다.
도 4는 본 발명의 실시예에 의해 제조된 육방정계 질화붕소 나노물질과 에폭시 복합체에 분산제를 넣지 않은 경우 (속이 빈 푸른 원)와 분산제를 넣었지만 에폭시에 용해되지 않은 경우 (속이 빈 붉은 원) 및 분산제가 에폭시에 용해되어 질화붕소 나노물질 표면에 흡착된 경우 (채워진 검은 점)의 질화붕소 나노물질의 농도에 따른 열전도도 변화 추이를 보여주는 그래프이다.
도 5는 본 발명의 실시예에 의해 제조된 육방정계 질화붕소 나노물질과 질화붕소 나노튜브 물질의 에폭시 복합체에 분산제를 넣지 않은 경우 (속이 빈 검은 원)와 분산제를 넣은 경우 (채워진 검은 원)의 열전도도 변화 추이를 보여주는 그래프이다. 또한 붉은 색 점선 및 속이 빈 붉은 원은 분산제를 넣지 않은 경우의 복합체를 얇은 박편으로 만들어 전자현미경 분석법을 통해 계산한 뭉침율(aggregation ratio)을 보여주는 그래프이다.
Claims (10)
- 질화붕소 복합체의 열전도도를 측정하는 단계;를 포함하며,
상기 질화붕소 복합체는 고분자 수지를 포함하는 매트릭스 및 질화붕소 나노물질을 포함하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제1항에 있어서,
상기 열전도도 측정은 접촉식, 비접촉식, 열용량법, 열확산법, 열선법, 열유속법, 또는 열평판법 중 하나 이상의 방법으로 수행되는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제1항에 있어서,
상기 질화붕소 복합체의 열전도도는 질화붕소 나노물질 사이의 직접 접촉비율에 따라 달라지는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제1항에 있어서,
상기 질화붕소 복합체는 상기 매트릭스에 분산된 분산제를 더 포함하는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제4항에 있어서,
상기 분산제는 질화붕소 나노물질 표면에 물리적으로 흡착되는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제5항에 있어서,
상기 접촉은 질화붕소 나노물질과 분산제 간의 정전기적 인력, 소수성-소수성 표면 상호인력, 또는 파이-파이 적층에 의한 흡착 중 하나 이상을 포함하는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제1항에 있어서,
상기 평가 방법은 측정된 열전도도로부터 분산 균일도를 평가하는 단계;를 더 포함하는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제7항에 있어서,
상기 분산 균일도 평가는 측정된 열전도도와 질화붕소 나노물질의 분산 균일도가 비례하는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제7항에 있어서,
상기 분산도 평가는 질화붕소 복합체에 전체적으로(colligative) 분산된 질화붕소 나노물질의 평균 분산 균일도를 평가하는 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법. - 제1항에 있어서,
상기 질화붕소 복합체의 분산 균일도 평가 방법은 비파괴 방법인 것을 특징으로 하는, 질화붕소 복합체의 분산 균일도 평가 방법.
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CN115368734B (zh) * | 2022-08-29 | 2024-01-26 | 南昌大学共青城光氢储技术研究院 | 一种高导热聚酰亚胺复合薄膜材料的制备方法 |
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