KR20210048055A - Method for producing metal oxide nanostructures doped with a heterogeneous element using microwave plasma device, the metal oxide nanostructures doped with the heterogeneous element manufactured using the same, and photocatalysts including the metal oxide nanostructures doped with a heterogeneous element - Google Patents

Abstract

The present invention relates to a method for manufacturing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma device, the metal oxide nanostructure doped with the heterogeneous element manufactured thereby, and a photocatalyst comprising the metal oxide nanostructure doped with the heterogeneous element. By using a microwave plasma device for manufacturing a nanostructure, there is an advantage in that metal oxide nanomaterials can be efficiently synthesized and, at the same time, heterogeneous elements can be easily doped.

Description

Method for manufacturing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma device, and a photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element (Method for producing metal) oxide nanostructures doped with a heterogeneous element using microwave plasma device, the metal oxide nanostructures doped with the heterogeneous element manufactured using the same, and photocatalysts including the metal oxide nanostructures doped with a heterogeneous element}

The present invention relates to a method of manufacturing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma device, and a photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element. will be.

Nanotechnology is a core technology of science and technology in the 21st century that not only induces technological innovation by grafting it with the traditional manufacturing industry, but also as a base technology that can further advance core strategic business in the future that fused with advanced technologies such as IT, BT, and CT. It is recognized as the next generation growth engine.

However, metal oxide nanomaterials have some limitations in optical and electrical properties that cannot be solved by morphology engineering. For example, the wide band gap of ZnO limits light absorption to the ultraviolet region. Specifically, ZnO lacks visible light absorption, which limits its performance when used as a photocatalyst, an antibacterial agent, and a photoelectrode. This is because ultraviolet rays account for less than 5% of all solar energy radiation. On the other hand, poor electronic properties are another common problem for pure metal oxides. For example, because the lifespan of the photogenerated carrier is short, the efficiency of the photocatalyst and the photoelectrode is greatly limited.

Other strategies have been used to solve this problem, such as doping with transition metal ions or non-metal ions, bonding with other semiconductors, and functionalization with precious metals or nanocarbon materials. It is a general fact that controlling the optical and electrical properties of metal oxide nanomaterials is a key factor in improving performance. For example, doping with a metal atom has been found to be effective in photocatalytic applications because it reduces the optical band gap energy to absorb visible light. For example, copper (Cu) is particularly useful because of the atom size, and similar physical and chemical properties similar to the Cu ^{2 +} and Zn ^2+. When doped with Cu, the optical band gap energy of ZnO decreases, defects are formed in the crystal lattice, and optical absorption increases, thereby improving photocatalytic properties. On the other hand, when N, a non-metallic, is introduced into the crystal lattice of ZnO, an intermediate energy level is created in the band gap and the absorbed energy is reduced. In fact, a result showing a remarkable red shift in the light absorption wavelength of the N-doped ZnO film has been reported.

However, various methods of synthesizing the metal oxide nanomaterials reported in the prior art and doping heterogeneous elements through a separate process require many steps that can increase the time and cost of manufacturing a device for commercial applications. In order to realize such practical industrial application, a system capable of efficiently synthesizing metal oxide nanomaterials and doping heterogeneous elements at the same time is required, and development of in-situ processes is required.

Japanese Patent No. 2680654

The present invention is to solve the above-described problems, and provides a method for producing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma device capable of efficiently synthesizing a metal oxide nanomaterial and doping heterogeneous elements at the same time. I want to.

In addition, it is intended to provide a photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element prepared according to the above manufacturing method.

In order to achieve the above object, according to an embodiment of the present invention,

_{Injecting a plasma gas containing heterogeneous elements and O 2} into a microwave plasma device, and introducing a metal raw material; And

Synthesizing a metal oxide nanostructure doped with heterogeneous elements by reacting the metal raw material injected into the microwave plasma apparatus with the plasma gas; It provides a method of manufacturing a metal oxide nanostructure doped with a heterogeneous element comprising a.

In addition, according to an embodiment of the present invention,

It provides a metal oxide nanostructure doped with a heterogeneous element prepared by the method of manufacturing a metal oxide nanostructure doped with the heterogeneous element.

In addition, according to an embodiment of the present invention,

It provides a photocatalyst comprising a metal oxide nanostructure doped with the heterogeneous element.

According to the method of manufacturing a metal oxide nanostructure doped with a heterogeneous element according to an embodiment of the present invention, by using a microwave plasma device, a metal oxide nanomaterial can be efficiently synthesized and at the same time, the heteroelement can be easily doped.

In addition, according to the above manufacturing method, a photocatalyst including a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element may be provided.

1 is a flow chart showing a method of manufacturing a metal oxide nanostructure doped with heterogeneous elements according to an embodiment of the present invention.
2 is a schematic diagram of a microwave plasma apparatus used for ZnO synthesis in Example 1. FIG.
3 is a graph showing the XRD analysis results of the Zn particles of Comparative Examples 1 and 2 and the ZnO nanomaterials synthesized in Examples 1 to 4. FIG.
4 is a diagram showing SEM analysis images of ZnO nanomaterials synthesized in Examples 1 to 3 ((a) Example 1, (b) Example 2, (c) Example 3).
5(a) is a graph showing the Raman spectrum of ZnO nanomaterials synthesized through Examples 1 to 4, and FIG. 5(b) is a graph showing the intensity ratio of the Raman peaks at 275, 436, and 582 cm-1 to be.
6 is a graph showing the XPS spectra showing the N1s peak of the ZnO nanomaterials synthesized in Examples 1 to 4.
7 is a graph showing the photo luminescence (PL) spectrum of the ZnO nanomaterials synthesized in Examples 1 to 4.
8 is a photograph showing the photocatalytic property evaluation results of the ZnO nanomaterial synthesized through Example 2 using methylene blue (MB) ((a) 0 minutes, (b) 5 minutes, (c) 10 Minutes, (d) 15 minutes).

In the present invention, various modifications may be made and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and described in detail in the detailed description.

However, this is not intended to limit the present invention to a specific embodiment, it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, when it is determined that a detailed description of a related known technology may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In the present invention, terms such as “comprise” or “have” are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements, numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance the possibility of the presence or addition.

The present invention relates to a method of manufacturing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma device, and a photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element. will be.

Conventionally, a metal oxide doped with a heterogeneous element has been manufactured using various methods of synthesizing a metal oxide nanomaterial and doping a heterogeneous element through a separate process. However, in this case, it requires many steps that can increase the time and cost of manufacturing the device for commercial application. In order to realize such practical industrial application, a system capable of efficiently synthesizing metal oxide nanomaterials and doping heterogeneous elements at the same time was required.

Accordingly, the present invention provides a method for producing a metal oxide nanostructure doped with a heterogeneous element using a microwave plasma apparatus capable of efficiently synthesizing a metal oxide nanomaterial and at the same time doping a heterogeneous element.

In addition, a photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element and a metal oxide nanostructure doped with a heterogeneous element prepared according to the above manufacturing method is provided.

Hereinafter, the present invention will be described in detail.

1 is a flow chart showing a method of manufacturing a metal oxide nanostructure doped with heterogeneous elements according to an embodiment of the present invention.

Referring to FIG. 1, in a method of manufacturing a metal oxide nanostructure doped with a heterogeneous element according to an embodiment of the present invention, _{a plasma gas containing heterogeneous elements and O 2} is injected into a microwave plasma device, and a metal raw material is injected. Step (S100); And

The metal raw material injected into the microwave plasma device reacts with the plasma gas to synthesize a metal oxide nanostructure doped with a heterogeneous element (S200).

In particular, the method of manufacturing a metal oxide nanostructure doped with heterogeneous elements according to an embodiment of the present invention uses a microwave plasma device to efficiently synthesize a metal oxide nanomaterial and at the same time easily doping heterogeneous elements. have.

In an embodiment of the present invention, it was found that a metal oxide nanostructure doped with a heterogeneous element was synthesized using a microwave plasma device, and the nanostructure improved the optical properties and photocatalytic properties in the visible light region due to the doping of the heterogeneous element. I found it. This will be described later in the experimental example.

For reference, plasma is an ionized gas having a kind of electrical conductivity and is composed of ions, electrons, free radicals, and various species of ground state and excited state, and thus has very high reactivity. Such plasma can be divided into a thermal plasma and a low temperature plasma.

Plasma in the present invention may mean atmospheric plasma implemented by microwave discharge, that is, microwave plasma, among low-temperature plasma.

The method of manufacturing a metal oxide nanostructure according to an embodiment of the present invention uses such a microwave plasma to produce a metal oxide nanostructure simply and quickly without the use of an additional reducing agent or a post-heat treatment process. The metal oxide nanostructure can be easily doped with heterogeneous elements.

First, a step (S100) of injecting a plasma gas containing _{heterogeneous elements and O 2} into a microwave plasma apparatus and introducing a metal raw material will be described.

The microwave plasma device may be a microwave plasma device including a 2.45 GHz microwave generator, a waveguide, and a quartz tube. More specifically, there is a 3-stub tuner between the microwave generator and the waveguide of the microwave plasma device to prevent reflection, thereby protecting the generator. In addition, the quartz tube is installed through the tapered waveguide, and atmospheric pressure plasma can be discharged in the quartz tube at high density and temperature.

The microwave plasma device can obtain plasma of high ionization degree without excessive heating at normal pressure, thereby reducing the cost of equipment construction related to vacuum maintenance, and since discharge occurs without internal electrodes, the system structure is simple and operation is easy. Have. In addition, there is an advantage in that there is little interference due to electrical interference.

First, in the step S100, plasma gas may be injected through a gas inlet located at one end of the quartz tube. In this case, the plasma gas may include heterogeneous elements and O ₂ gas.

The heterogeneous element may be a doping element to be doped on a metal oxide. Specifically, the doping element is manganese (Mn), copper (Cu), molybdenum (Mo), cobalt (Co), iron (Fe), silver ( Ag), lead (Pd), yttrium (Y), magnesium (Mg), tin (Sn), nickel (Ni), aluminum (Al), cerium (Ce), neodymium (Nd), carbon (C), sulfur ( It may be one or more selected from the group consisting of S) and nitrogen (N). For example, the doping element may be nitrogen (N).

Specifically, the plasma gas including the heterogeneous element and O ₂ may be an O ₂ /N ₂ mixed gas, and in this case, the synthesized metal oxide nanostructure may be a metal oxide nanostructure doped with nitrogen. More specifically, in the O ₂ /N ₂ mixed gas, the O ₂ gas and the N ₂ gas may be mixed in a volume ratio of 10 to 90:90:10. Specifically, the O ₂ gas and the N ₂ gas may be 30 to 88:70 to 12, 60 to 85: 40 to 15, 70 to 83: 30 to 17, and preferably, mixed at an average volume ratio of 80:20 It may be a mixed gas. In particular, as the ratio of nitrogen in the plasma gas increases, the concentration of nitrogen doped in the metal oxide may increase, which can be confirmed through Raman and XPS analysis.

In this case, the flow rate of the plasma gas may be in the range of 5 to 30 LPM, may be in the range of 7 to 20 LPM, in the range of 9 to 15 LPM, or may be in the range of 10 LPM on average. If the flow rate of the plasma gas is less than or exceeds the above range, plasma may not be discharged at atmospheric pressure. Therefore, the above-described range may be desirable.

And, it is possible to put a metal raw material into the quartz tube. Specifically, the metal raw material is zinc (Zn), magnesium (Mg), selenium (Se), tin (Sn), iron (Fe), silicon (Si), titanium (Ti), zirconium (Zr), aluminum (Al ), tellurium (Te), vanadium (V), tungsten (W), and germanium (Ge), and may be one or more selected from the group consisting of, for example, zinc (Zn).

On the other hand, metals with a low melting point such as Zn, Mg, Se, Sn, etc. can be injected into the reactor in the form of metal particles to synthesize metal oxide nanostructures, and metals with high melting points such as Ti and Si are TiCl ₄ , SiCl ₄ As such, it is possible to synthesize a metal oxide nanostructure by injecting a liquid precursor containing a metal into the reactor.

In particular, when the metal material is in the form of particles or powder, the metal material may be continuously introduced into the plasma column of the quartz tube through a vibrator. For example, spherical Zn powder (Sigma-aldrich) having an average diameter of 10 μm can be inserted into the interior of the quartz tube.

Next, the metal raw material injected into the microwave plasma apparatus reacts with the plasma gas to synthesize a metal oxide nanostructure doped with a heterogeneous element (S200).

Specifically, in the step of synthesizing the metal oxide nanostructure doped with the heterogeneous element (S200), plasma power of 700 W or more is supplied for 5 seconds to 30 minutes by supplying plasma power of 500 W or more. Plasma treatment is possible. More specifically, the plasma power may be in the range of 500 to 1500 W, preferably in the range of 700 to 1000 W. In particular, when the plasma power is less than 500 W, the effect of synthesizing the metal oxide nanostructures by plasma treatment may be insignificant, and the maximum effect may be exhibited at 700 to 1000 W, and power above that may be inefficient.

In addition, the plasma treatment time may be 5 seconds to 30 minutes, or may be an average of 10 minutes. If the plasma treatment time is less than 5 seconds, the effect of synthesizing the metal oxide nanostructures doped with heterogeneous elements in the plasma treatment may be insignificant, and since the maximum effect appears in less than 30 minutes, the plasma treatment time beyond that may be inefficient. .

Meanwhile, the metal oxide nanostructure may have at least one shape selected from the group consisting of a nanowire, a nanorod, and a tetrapod, and specifically may have a tetrapod shape.

In the method of manufacturing a metal oxide nanostructure doped with a heterogeneous element according to an embodiment of the present invention, a metal oxide nanostructure doped with a heterogeneous element may be synthesized through a continuous process.

According to the above-described method, it is possible to synthesize a metal oxide nanostructure doped with a heterogeneous element. The metal oxide nanostructures doped with the heterogeneous elements thus synthesized may be deposited on the inner wall of a quartz tube and collected using a scraper.

In addition, according to an embodiment of the present invention,

It provides a metal oxide nanostructure doped with a heterogeneous element prepared by a method of manufacturing a metal oxide nanostructure doped with a heterogeneous element.

The metal oxide nanostructure doped with the heterogeneous element may be a metal oxide nanostructure doped with nitrogen. Specifically,

The metal oxide nanostructure may be at least one selected from the group consisting of nanowires, nanorods, and tetrapods, and specifically, may have a tetrapod shape.

Specifically, the metal oxide nanostructure doped with the heterogeneous element may be a metal oxide nanostructure doped with the tetrapod-shaped nitrogen, and more specifically, may be a ZnO nanostructure doped with the tetrapod-shaped nitrogen.

The tetrapod-shaped nitrogen-doped ZnO nanostructure may have an absorption wavelength of 500 to 700 nm, and may exhibit a strong UV-Vis absorption line in an average range of 650 nm. This may be due to the improved optical properties in the visible light region of the nanostructure by nitrogen doping.

The metal oxide nanostructure doped with heterogeneous elements according to an exemplary embodiment of the present invention is synthesized in a microwave plasma device, and thus fluorescence characteristics and fluorescence efficiency may be improved.

In addition, according to an embodiment of the present invention,

It provides a photocatalyst comprising a nanostructure having an absorption wavelength in the range of 500 to 700 nm.

The photocatalyst is a material that can promote a chemical reaction by light or has a catalytic action when it receives light energy, and can have a water molecular decomposition catalytic reaction, an organic substance decomposition catalytic reaction, a hydrophilic surface catalytic reaction, and a self cleaning reaction. have.

Hereinafter, the present invention will be described in more detail through examples and experimental examples.

However, the following Examples and Experimental Examples are merely illustrative of the present invention, and the contents of the present invention are not limited to the following Examples and Experimental Examples.

< Example >

Example 1~4. Nitrogen Doped ZnO Synthesis of nanomaterials

ZnO nanostructures were synthesized using the microwave plasma apparatus shown in FIG. 2. Referring to FIG. 2, a microwave plasma apparatus for synthesizing ZnO is composed of a 2.45 GHz microwave generator (LG, 2M246), a tapered waveguide, and a quartz tube having an inner diameter of 28 mm.

First, plasma gas was injected through a gas inlet located at one end of the quartz tube. Specifically, as the plasma gas, 99.999% of high purity O ₂ /N ₂ mixed gas or high purity O ₂ was used.

At this time, the flow rate of the gas was set to 10 lpm. Then, spherical Zn powder (Sigma-aldrich) having an average diameter of 10 μm was inserted into the quartz tube. Specifically, the powder was continuously inserted into the plasma column of the quartz tube through the vibrator.

In addition, the Zn powder reacted with plasma to synthesize tetrapod type ZnO. The synthesized ZnO was deposited on the inner wall of the quartz tube and collected using a scraper.

The specific flow rates of the plasma gas of Examples 1 to 5 are summarized in Table 1 below.

Plasma gas flow rate (lpm) O ₂ N ₂ Example 1 One 9 Example 2 2 8 Example 3 5 5 Example 4 10 0

< Comparative example >

Comparative example 1.Zn powder

Spherical Zn powder (Sigma-aldrich) having an average diameter of 10 μm was prepared.

Comparative example 2.

A nanomaterial was synthesized using the same method as in Example, except that the plasma gas was used as N _{2 gas.}

The specific flow rates of the plasma gas of Comparative Example 2 are summarized in Table 1 below.

Plasma gas flow rate (lpm) O ₂ N ₂ Comparative Example 2 0 10

< Experimental example >

Experimental example One. XRD analysis

The ZnO material synthesized in Examples 1 to 4 and the Zn powder of Comparative Examples 1 and 2 were analyzed for X-ray diffraction (XRD) using CuKα radiation (λ=0.154).

And, the results are shown in FIG. 3. 3 is a graph showing the XRD analysis results of the Zn particles of Comparative Examples 1 and 2 and the ZnO nanomaterials synthesized in Examples 1 to 4. FIG.

Referring to FIG. 3, as a result of XRD analysis, in the case of Comparative Example 2, ZnO was not synthesized, and in Examples 1 to 4, it can be seen that ZnO metal oxide was synthesized. That is, it was confirmed from the XRD analysis results that Zn powder synthesized ZnO reacted in microwave plasma.

Specifically, when comparing the X-rays of Examples 1 to 4 and Comparative Examples 1 and 2, it can be seen that in Examples 1 to 4, the Zn peak of Comparative Example 1 has disappeared. This means that the ZnO nanomaterial was synthesized after the plasma reaction.

Experimental example 2. ZnO Surface analysis

Using a scanning electron microscope (SEM, Zeiss, Supra 55VP Oberkochen, Germany), the surface of the ZnO material synthesized in Example 2 was observed.

And, the results are shown in FIG. 4. 4 is a diagram showing an SEM analysis image of a ZnO nanomaterial synthesized in Example

Referring to FIG. 4, when a high-purity oxygen/nitrogen mixture gas was used, it was confirmed that ZnO in the form of tetrapod was synthesized.

Experimental example 3. ZnO Raman spectrum analysis of nanomaterials

The Raman spectrum of the ZnO nanomaterials synthesized in Examples 1 to 4 was analyzed.

And, the results are shown in FIG. 5. 5(a) is a graph showing the Raman spectrum of ZnO nanomaterials synthesized through Examples 1 to 4, and FIG. 5(b) is a graph showing the intensity ratio of the Raman peaks shown at ^{275, 436, and 582 cm -1} to be.

Referring to FIG. 5, it can be seen that the intensity of the peaks at ^{275 and 582 cm -1 related to nitrogen increases as the flow rate of nitrogen increases.} It is believed that the degree of doping of nitrogen in the ZnO nanomaterial increased as the flow rate of nitrogen increased.

Experimental example 4. ZnO Nanomaterials XPS Spectrum analysis

The XPS spectrum (X-ray photoelectron spectroscopy) of the ZnO nanomaterials synthesized in Examples 1 to 4 was analyzed. And, the results are shown in FIG. 6.

6 is a graph showing the XPS spectra showing the N1s peak of the ZnO nanomaterials synthesized in Examples 1 to 4.

Referring to FIG. 6, it can be seen that the intensity of the peak increases as the flow rate of nitrogen increases. It is believed that the degree of doping of nitrogen in the ZnO nanomaterial increased as the flow rate of nitrogen increased.

Experimental example 5. ZnO Nanomaterials Optical Luminance ( PL ) Spectral analysis

The photoluminescence (PL) spectrum of the ZnO nanomaterials synthesized in Examples 1 to 4 was analyzed.

And, the results are shown in FIG. 7. 7 is a graph showing the photo luminescence (PL) spectrum of the ZnO nanomaterials synthesized in Examples 1 to 4.

Referring to FIG. 7, it can be seen that the optical properties of the ZnO nanomaterials of Examples 1 and 2 having high nitrogen flow rates are improved in the visible light region. It is determined that the optical properties are improved in the visible light region due to the formation of an intermediate level by nitrogen doping.

Experimental example 6. ZnO Nanomaterials Photocatalyst Characterization

The photocatalytic properties of the ZnO nanomaterial synthesized in Example 2 were analyzed.

And, the results are shown in FIG. 8. 8 is a photograph showing the photocatalytic property evaluation results of the ZnO nanomaterial synthesized in Example 2 using methylene blue (MB) ((a) 0 minutes, (b) 5 minutes, (c) 10 minutes , (d) 15 minutes).

Referring to FIG. 8, it can be seen that the methylene blue solution to which the ZnO nanomaterial is added becomes lighter and colorless as time passes.

For reference, the methylene blue solution shows a strong UV-Vis absorption line at about 650 nm, and when reduced by a photocatalytic reaction, it becomes Leuco-methylene blue and becomes colorless. It means effective.

Claims (13)

_{Injecting a plasma gas containing heterogeneous elements and O 2} into a microwave plasma device, and introducing a metal raw material; And
Synthesizing a metal oxide nanostructure doped with heterogeneous elements by reacting the metal raw material injected into the microwave plasma apparatus with the plasma gas; Method of producing a metal oxide nanostructure doped with heterogeneous elements comprising a.
The method of claim 1,
The plasma gas containing heterogeneous elements and O _{2 is a mixed gas of O 2} /N ₂ , and the synthesized metal oxide nanostructure is a metal oxide nanostructure doped with nitrogen. Method of manufacturing.
The method of claim 2,
The O ₂ /N ₂ mixed gas is a _{method for producing a nanostructure doped with heterogeneous elements, characterized in that the O 2} gas and the N ₂ gas are mixed in a volume ratio of 10 to 90: 90 to 10.
The method of claim 1,
Heterogeneous elements are manganese (Mn), copper (Cu), molybdenum (Mo), cobalt (Co), iron (Fe), silver (Ag), lead (Pd), yttrium (Y), magnesium (Mg), and tin. Characterized in that at least one selected from the group consisting of (Sn), nickel (Ni), aluminum (Al), cerium (Ce), neodymium (Nd), carbon (C), sulfur (S) and nitrogen (N) Method for producing a metal oxide nanostructure doped with a heterogeneous element.
The method of claim 1,
Metal raw materials include zinc (Zn), magnesium (Mg), selenium (Se), tin (Sn), iron (Fe), silicon (Si), titanium (Ti), zirconium (Zr), aluminum (Al), and tell. Method for producing a metal oxide nanostructure doped with a heteroelement, characterized in that at least one selected from the group consisting of rulium (Te), vanadium (V), tungsten (W), and germanium (Ge).
The method of claim 1,
In the step of synthesizing a metal oxide nanostructure doped with a heterogeneous element, the flow rate of the plasma gas is in the range of 5 to 30 LPM.
The method of claim 1,
The step of synthesizing a metal oxide nanostructure doped with a heterogeneous element is performed by supplying plasma power in the range of 500 to 1500 W for 5 seconds to 30 minutes. Method of manufacturing.
The method of claim 1,
A method of manufacturing a metal oxide nanostructure doped with a heterogeneous element is a method of producing a metal oxide nanostructure doped with a heterogeneous element, characterized in that synthesizing a metal oxide nanostructure doped with a heterogeneous element in a continuous process. A metal oxide nanostructure doped with a heterogeneous element prepared by the method for producing a metal oxide nanostructure doped with a heterogeneous element according to any one of claims 1 to 8.
The method of claim 9,
A metal oxide nanostructure doped with a heterogeneous element, characterized in that nitrogen-doped.
The method of claim 9,
A metal oxide nanostructure doped with a heterogeneous element is a metal oxide nanostructure doped with a heterogeneous element, characterized in that it has a tetrapod shape.
The method of claim 9,
The metal oxide nanostructure doped with a heterogeneous element has an absorption wavelength of 500 to 700 nm and is doped with nitrogen.
A photocatalyst comprising a metal oxide nanostructure doped with a heterogeneous element according to claim 12.

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