KR20210040012A - Organic light emitting display device and method of manufacturing an organic light emitting display device - Google Patents

Abstract

An organic light emitting display device capable of improving the image uniformity may include a substrate, a thin film transistor, an insulating layer, a first electrode, a pixel defining layer, an organic light emitting structure, and a second electrode. A substrate may include a plurality of pixel regions and a plurality of transmissive regions. Thin film transistors may be disposed in the pixel regions. An insulating layer may cover the thin film transistors. First electrodes may be electrically connected to the thin film transistors. A pixel defining layer may be disposed on the first electrodes, and the pixel defining layer may include a black material to define adjacent transmissive regions having asymmetric shapes with at least one of the pixel regions interposed therebetween. Organic light emitting structures may be disposed on the pixel defining layer. The second electrode may be disposed on the organic light emitting structures.

Description

An organic light-emitting display device and a method of manufacturing an organic light-emitting display device TECHNICAL FIELD

The present invention relates to an organic light emitting display device and a method of manufacturing the organic light emitting display device. More specifically, the present invention relates to an organic light emitting display device including a plurality of transmissive regions having asymmetric shapes and a method of manufacturing the organic light emitting display device.

The organic light emitting diode display may include a pixel region and a peripheral region adjacent to the pixel region. In general, a plurality of pixels capable of displaying an image may be disposed in the pixel area, and a plurality of wires may be disposed in the peripheral area. In this case, both the pixel area and the peripheral area may correspond to opaque areas.

Recently, since a transparent area and an opaque area are provided, it is possible to implement a transparent mode that transmits objects and/or images located on the opposite side of the organic light-emitting display device in the OFF state. A transparent organic light emitting display device capable of implementing a display mode capable of being displayed is in the spotlight as a next-generation display device.

However, in a conventional transparent organic light emitting display device, since the transmissive regions are periodically arranged at regular intervals, the transmissive regions may optically serve as multiple slits, and light passing through these multiple slits is diffracted. It may cause interference. As a result, when the transparent organic light emitting display device is in the off state, there is a problem that objects and/or images transmitted through each of the transparent areas are distorted, and when the transparent organic light emitting display device is in the on state, the transparent areas There is a problem in that the uniformity of images displayed in the pixel regions is also degraded due to distortion of objects and/or images respectively occurring in the pixel area.

An object of the present invention is to prevent distortion of objects and/or images that occur in each of the transmissive regions by preventing diffraction interference of light in the off state, including a plurality of transmissive regions each having an asymmetric shape. In the on state, an organic light emitting display device capable of improving the uniformity of images displayed in each pixel area is provided.

Another object of the present invention is to provide a method of manufacturing the organic light emitting display device.

However, the object of the present invention is not limited to the above-described objects, and may be variously extended without departing from the spirit and scope of the present invention.

In order to achieve one object of the present invention, an organic light emitting display device according to exemplary embodiments of the present invention includes a substrate, a thin film transistor, an insulating layer, a first electrode, a pixel defining layer, an organic light emitting structure, and a second light emitting structure. It may include an electrode or the like. The substrate may include a plurality of pixel regions and a plurality of transmissive regions. The thin film transistors may be disposed in the pixel regions. The insulating layer may be disposed on the thin film transistors. The first electrodes may be electrically connected to the thin film transistors. The pixel defining layer may be disposed on the first electrodes, include a black material, and may define adjacent transmissive regions having asymmetric shapes through at least one of the pixel regions. The organic light emitting structures may be disposed on the pixel defining layer. The second electrode may be disposed on the organic light emitting structures.

In example embodiments, each of the thin film transistors includes an active pattern disposed on the substrate, a gate insulating layer covering the active pattern, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer covering the gate electrode, and Source and drain electrodes connected to the active pattern through the gate insulating layer and the interlayer insulating layer may be included.

In example embodiments, an opening formed in the gate insulating layer, the interlayer insulating layer, and the insulating layer may additionally include an opening partially exposing the transparent region.

In example embodiments, the pixel-defining layer extends along the sidewall of the opening, and the shapes of the transmissive regions adjacent to each other through the 　pixel area are defined by Can be.

In example embodiments, the areas of the transmissive regions adjacent to each other through the pixel region may be determined by a pixel defining layer disposed along the sidewall of the opening.

In example embodiments, the transmissive regions adjacent to each other through the pixel region may have different widths or different lengths.

In exemplary embodiments, the black material is carbon black, phenylene black, aniline black, cyanine black, nigrosine acid black, It may contain black resin and the like.

In example embodiments, a light blocking member disposed in the pixel area may be additionally included.

In other exemplary embodiments, the insulating layer may include the black material, and may define adjacent transmissive regions having asymmetric shapes through the pixel region.

In addition, in order to achieve one object of the present invention, an organic light emitting display device according to other exemplary embodiments of the present invention includes a substrate, a black matrix, thin film transistors, an insulating layer, first electrodes, and a pixel definition. It may include a film, organic light emitting structures, a second electrode, and the like. The substrate may include a plurality of pixel regions and a plurality of transmissive regions. The black matrix is disposed in the pixel area, includes a black material, and may define adjacent transmissive areas having asymmetric shapes around one pixel area. The thin film transistors may be disposed on the black matrix. The insulating layer may be disposed on the thin film transistors. The first electrodes may be electrically connected to the thin film transistors. The pixel defining layer may be disposed on the first electrodes. The organic light emitting structures may be disposed on the pixel defining layer. The second electrode may be disposed on the organic light emitting structures.

In example embodiments, each of the thin film transistors includes an active pattern disposed on the substrate, a gate insulating layer covering the active pattern, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer covering the gate electrode, and Source and drain electrodes connected to the active pattern through the gate insulating layer and the interlayer insulating layer may be included.

In example embodiments, the gate insulating layer, the interlayer insulating layer, and an opening partially exposing the transparent region through the insulating layer may be additionally included.

In exemplary embodiments, the shapes of the transmission areas adjacent to one pixel area may be determined based on the area of the transmission areas exposed by the black matrix.

In example embodiments, areas of the 　 transmissive areas exposed by the black matrix may be different.

In example embodiments, the transmissive regions spaced apart from the pixel region at a predetermined interval may have different widths or different lengths.

In order to achieve another object of the present invention described above, in a method of manufacturing an organic light emitting display device according to exemplary embodiments of the present invention, after providing a substrate including a plurality of pixel regions and a plurality of transmissive regions, , Thin film transistors may be formed in the pixel region. An insulating layer may be formed on the thin film transistors. First electrodes electrically connected to the thin film transistors may be formed. A pixel defining layer defining adjacent transmissive regions having asymmetric shapes may be formed on the first electrodes by using a black 　 material 　 interposing at least one of the pixel regions. Organic light-emitting structures may be formed on the pixel defining layer. A second electrode may be formed on the organic light emitting structures.

In example embodiments, in the process of forming respective thin film transistors, an active pattern may be formed on the substrate. A gate insulating layer may be formed to cover the active pattern. A gate electrode may be formed on the gate insulating layer. An interlayer insulating layer may be formed on the gate electrode. Source and drain electrodes connected to the active pattern may be formed through the gate insulating layer and the interlayer insulating layer.

In example embodiments, in the process of forming the organic light emitting display device, an opening partially exposing the transmissive region through the gate insulating layer, the interlayer insulating layer, and the insulating layer may be additionally formed. A light blocking member may be additionally formed in the pixel area.

In other exemplary embodiments, the insulating layer may be formed of a black material to define adjacent transmissive regions having asymmetric shapes through the pixel region.

In order to achieve another object of the present invention described above, in a method of manufacturing an organic light emitting display device according to other exemplary embodiments of the present invention, a plurality of pixel areas and a plurality of transmissive areas adjacent to the pixel areas After providing the substrate including the pixel regions, a black matrix may be formed using a black material for the pixel regions to define adjacent transmissive regions having asymmetric shapes by interposing at least one of the pixel regions. . Thin film transistors may be formed on the black matrix. An insulating layer may be formed on the thin film transistors. First electrodes electrically connected to the thin film transistors may be formed. A pixel defining layer may be formed on the first electrodes. Organic light-emitting structures may be formed on the pixel defining layer. A second electrode may be formed on the organic light emitting structures.

The organic light emitting display device according to exemplary embodiments of the present invention has an opening partially exposing a transmission region of a substrate, extends along a sidewall of the opening, and includes a black material to interpose at least one of the pixel regions. Thus, a pixel defining layer that can be defined so that each of the adjacent transmissive regions has an asymmetric shape may be included. For example, the areas of the transmissive regions adjacent to each other through the one pixel region may be determined by the opening and the pixel defining layer extending along a sidewall of the opening, respectively, and may have different areas. . In other words, the shapes of the transmissive regions adjacent to each other through one pixel region may be designed asymmetrically. Therefore, compared to a conventional organic light-emitting display device having a plurality of transmissive regions arranged at regular intervals and having a symmetrical shape, the periodicity of the transmissive regions is weakened or substantially eliminated, so the diffraction of light passing through each of the transmissive regions The interference phenomenon can be mitigated. As a result, in the off state, the organic light emitting display device can prevent distortion of objects and/or images occurring in the transmissive regions, respectively, so that the organic light emitting display device can display a clearer image. The organic light emitting diode display according to other exemplary embodiments of the present invention has an opening that partially exposes a transmission region of the substrate, and is not located within the opening (ie, is disposed on the substrate in the pixel region). The material may include a black matrix that can be defined so that each of the transparent regions adjacent to each other through the pixel region has an asymmetric shape. Since the areas of the transmissive areas are designed to be different from each other by the black matrix, the periodicity of the transmissive areas can be effectively removed. Accordingly, it is possible to effectively suppress a diffraction interference phenomenon of light passing through the organic light emitting display device. In the method of manufacturing an organic light emitting diode display according to exemplary embodiments of the present invention, by adding a simple process of exposing a transmissive region and forming an opening defining adjacent transmissive regions to each have an asymmetric shape, A distortion phenomenon in which images and/or objects located on the rear surface of the organic light-emitting display device overlap or blur in the transparent regions of the organic light-emitting display device is substantially reduced without significantly increasing the manufacturing cost of the organic light-emitting display device. Can be reduced or eliminated.

However, the effects of the present invention are not limited to those described above, and may be variously extended without departing from the spirit and scope of the present invention.

1 is a plan view illustrating an organic light emitting display device according to exemplary embodiments of the present invention.
FIG. 2 is a cross-sectional view of the organic light emitting diode display of FIG. 1 taken along line A-A'.
3 to 7 are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to exemplary embodiments of the present invention.
8 is a cross-sectional view illustrating an organic light emitting display device according to other exemplary embodiments of the present invention.
9 to 13 are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to other exemplary embodiments of the present invention.

Hereinafter, an organic light-emitting display device and a method of manufacturing the organic light-emitting display device according to exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view illustrating an organic light emitting display device according to exemplary embodiments of the present invention. FIG. 2 is a cross-sectional view of the organic light emitting diode display of FIG. 1 taken along line A-A'.

1 and 2, the organic light emitting display device 100 includes a substrate 110, thin film transistors, an insulating layer 170, first electrodes 175, a pixel defining layer 180, and an organic light emitting diode. Structures 185, second electrodes 190, and the like may be included.

The substrate 110 may be formed of a transparent insulating substrate. The substrate 110 may include a plurality of pixel regions (I) and a plurality of transmissive regions (II) adjacent to the pixel regions (I).

The buffer layer 115 may be disposed on the substrate 110. Since the buffer layer 115 has a substantially flat top surface, when the surface of the substrate 110 is not uniform, it may serve to improve the flatness of the surface of the substrate 110.

Referring to FIG. 2, a light blocking member 120 may be disposed on the buffer layer 115 formed in the pixel region I of the substrate 110, and transmission of light incident from the outside may be substantially blocked. For example, the light blocking member 120 may be partially disposed in the pixel region (I) of the substrate 110. Therefore, since the light blocking member 120 can prevent external light from intervening in the organic light emitting display device 100, when the organic light emitting display device 100 is turned on, the organic light emitting display device 100 Uniformity of the displayed image can be ensured. For example, the light blocking member 120 may be formed of a metal compound, a black material, a metal having a relatively low reflectivity, an insulating resin, a light blocking paint, or the like. Meanwhile, in FIG. 2, a configuration in which the light blocking member 120 is disposed on the buffer layer 115 has been described, but the configuration of the organic light emitting display device 100 is not limited to that illustrated in FIG. 2. Optionally, the light blocking member 120 may not be disposed on the buffer layer 115.

Each of the thin film transistors may be disposed on the light blocking member 120. Each of these thin film transistors may include a thin film transistor having an active pattern 125 made of silicon or an active pattern 125 made of semiconductor oxide. For example, the thin film transistors include an active pattern 125, a first gate insulating layer 130, a gate electrode 135, a second gate insulating layer 140, a first interlayer insulating layer 145, and a source electrode 150, respectively. , A drain electrode 155, and the like may be provided.

The active pattern 125 may be disposed on the light blocking member 120. For example, the active pattern 125 may include a source region 126 and a drain region 127 each doped with impurities, and a channel region 128 positioned between the source region 126 and the drain region 127. I can.

The first gate insulating layer 130 may be disposed on the buffer layer 115 to substantially cover the active pattern 125. For example, the first gate insulating layer 130 may be formed of silicon oxide, metal oxide, or the like.

The gate electrode 135 may be disposed on the first gate insulating layer 130. The gate electrode 135 may be formed on a portion of the first gate insulating layer 130 where the active pattern 125 is positioned below.

A second gate insulating layer 140 covering the gate electrode 135 may be disposed on the first gate insulating layer 130. The second gate insulating layer 140 may include substantially the same material as the first gate insulating layer 130. Optionally, the second gate insulating layer 140 and the first gate insulating layer 130 may be formed of different materials.

A first interlayer insulating layer 145 may be disposed on the second gate insulating layer 140. The first interlayer insulating layer 145 may electrically insulate the gate electrode 135 from the source electrode 150 and the drain electrode 155. The first interlayer insulating layer 145 may be formed to have a substantially uniform thickness on the second gate insulating layer 140 along the profile of the gate electrode 135. The first interlayer insulating layer 145 may be made of a silicon compound.

As illustrated in FIG. 2, the source electrode 150 and the drain electrode 155 may be disposed on the first interlayer insulating layer 145. The source and drain electrodes 150 and 155 may pass through the first interlayer insulating layer 145 and contact each of the source and drain regions 126 and 127 of the active pattern 125. Each of 150 and 155 may be composed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

A second interlayer insulating layer 160 may be disposed on the first interlayer insulating layer 145 to cover the source and drain electrodes 150 and 155. Here, the second interlayer insulating layer 160 may include a material that is substantially the same as the first interlayer insulating layer 145.

A third interlayer insulating layer 165 may be disposed on the second interlayer insulating layer 160. In this case, the third interlayer insulating layer 165 may include substantially the same material as the first interlayer insulating layer 145 and the second interlayer insulating layer 160.

An insulating layer 170 may be disposed on the third interlayer insulating layer 165. In example embodiments, the insulating layer 170 may include a black material. Black materials that can be used as the insulating layer 170 are carbon black, phenylene black, aniline black, cyanine black, nigrosine acid black, It can be made with black resin or the like. Accordingly, as illustrated in FIG. 1, each of the transparent regions (II) adjacent to each other with a predetermined interval 　 through one pixel region (I) is defined to have an asymmetric shape by the insulating layer 170 Can be. In other words, the 　areas of the transmissive regions (II) are 　different 　number 　. As a result, the transmissive regions II adjacent to each other around the pixel region I may have different widths and/or lengths. In this way, the transmissive regions (II) adjacent to each other via the pixel region (I) have a predetermined width difference (W1) and/or a length difference (D1) Thus, it is possible to prevent diffraction interference of light passing through the organic light emitting display device 100. As a result, the organic light emitting display device 100 may implement a high-quality image by substantially reducing or removing a phenomenon in which images or objects on the rear surface of the organic light emitting diode display 100 are overlapped or blurred.

According to exemplary embodiments, as illustrated in FIG. 2, the first and second gate insulating layers 130 and 140, the first to third interlayer insulating layers 145, 160, 165, and the insulating layer 170 An opening 174 may be positioned through) to partially expose the transmission region (II) of the substrate 110. As described above, the shape of the transparent region II may be defined by the insulating layer 170, but may also be defined by the pixel defining layer 180 disposed on the sidewall of the opening 174. This will be described later.

Referring back to FIG. 2, the first electrode 175 may be disposed on the insulating layer 170, and penetrating the second interlayer insulating layer 160, the third interlayer insulating layer 165, and the insulating layer 170. It may be connected to the drain electrode 155 through the contact hole 172. For example, the first electrode 175 may be made of a reflective material or a transmissive material.

The pixel defining layer 180 may be disposed on the first electrode 175. The pixel defining layer 180 may include a pixel opening 182 partially exposing the first electrode 175. In example embodiments, the pixel defining layer 180 may extend along a sidewall of the opening 174. The pixel defining layer 180 may include a black material. The black material that can be used as the pixel defining layer 180 may include carbon black, phenylene black, aniline black, cyanine black, nigrosine black, black resin, and the like. In this case, the shapes of the transmissive regions (II) exposed by the pixel defining layer 180 disposed along the sidewall of the opening 174 may be designed asymmetrically, and the areas of the transmissive regions (II) are It can be different. In other words, since the transmissive regions II adjacent to each other through at least one of the pixel regions I can be defined to have an asymmetric shape by the pixel defining layer 180, such a transmissive region II ) Can have different widths and/or lengths. As illustrated in FIG. 1, the transmission regions II spaced apart at a predetermined interval through the pixel region I have a predetermined width difference W1 and/or a length difference D1, so that the transmission region The periodicity of (II) may be weakened or substantially eliminated. As a result, it is possible to effectively prevent the diffraction interference phenomenon of light passing through the transmission region (II) of the organic light emitting display device 100, thereby improving the uniformity of the image.

The organic light emitting display device 100 according to exemplary embodiments of the present invention may include a plurality of transmissive regions II each having an asymmetric shape and adjacent to each other around one pixel region I. Accordingly, compared to a conventional organic light-emitting display device having transmissive regions arranged at regular intervals and having a symmetrical shape, the periodicity of the transmissive regions (II) is weakened, so that the light passing through the transmissive regions (II) is reduced. The diffraction interference phenomenon can be substantially alleviated or eliminated. As a result, when the organic light-emitting display device 100 is in the off state, objects and/or images located on the opposite side of the organic light-emitting display device 100 can be more clearly implemented through the transmissive regions (II), and organic light emission When the display device 100 is in the on state, a high-quality image may be displayed through the pixel regions (I).

The organic light emitting structure 185 may be disposed on the first electrode 175 exposed through the pixel opening 182 of the pixel defining layer 180. Optionally, the organic light emitting structure 185 may extend along a sidewall of the pixel opening 182 of the pixel defining layer 180. The organic light-emitting structure 85 may be formed using light-emitting materials capable of emitting different color lights (eg, red light, green light, blue light, etc.) of the organic light-emitting display device 100. Optionally, the organic light-emitting structure 185 may emit white light by stacking light-emitting materials capable of generating different color lights such as red light, green light, and blue light.

The second electrode 190 may be disposed on the pixel defining layer 180 and the organic light emitting structure 185. The second electrode 190 may be made of substantially the same material as the first electrode 175.

3 to 7 are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to exemplary embodiments of the present invention.

Referring to FIG. 3, a buffer layer 115 may be formed on the substrate 110. In example embodiments, the substrate 110 may include a plurality of pixel regions (I) and a plurality of transmissive regions (II) adjacent to the pixel regions (I). For example, the buffer layer 115 may be formed using silicon nitride or silicon oxide.

An active pattern 125 may be formed on the buffer layer 115. The active pattern 125 may be obtained using a silicon or oxide semiconductor.

Referring back to FIG. 3, a first gate insulating layer 130 covering the active pattern 125 may be formed on the buffer layer 115. For example, the first gate insulating layer 130 may be formed using a silicon compound such as silicon oxide or silicon carbonate.

A gate electrode 135 may be formed on the first gate insulating layer 130. The gate electrode 135 may be obtained using a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. The gate electrode 135 may be formed on portions of the first gate insulating layer 130 where the active pattern 125 is positioned below. In addition, by using the gate electrode 135 as masks to implant impurities into the active pattern 125, the source region 126 and the drain region 127 may be formed in the active pattern 125.

The second gate insulating layer 140 may cover the gate electrode 135 and may be formed on the first gate insulating layer 130. The second gate insulating layer 140 may be formed using a material substantially the same as the first gate insulating layer 130, but may be obtained using a material different from the first gate insulating layer 130.

The first interlayer insulating layer 145 may be formed on the second gate insulating layer 140. The first interlayer insulating layer 145 may be formed using a silicone compound, a transparent resin, or the like.

Subsequently, a source electrode 150 and a drain electrode 155 may be formed on the first interlayer insulating layer 145. For example, the source electrode 150 and the drain electrode 155 may be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. The drain electrode 155 may be connected to the drain region 127 of the active pattern 125, and the source electrode 150 may be connected to the source region 126 of the active pattern 125.

Referring to FIG. 4, the second interlayer insulating layer 160 may cover the source and drain electrodes 150 and 155 and may be formed on the first interlayer insulating layer 145. Subsequently, the third interlayer insulating layer 165 may be formed on the second interlayer insulating layer 160. The second and third interlayer insulating layers 160 and 165 may be made of substantially the same material as the first interlayer insulating layer 145.

Referring to FIG. 5, an insulating layer 170 may be formed on the third interlayer insulating layer 165 to cover the thin film transistor. According to exemplary embodiments, a contact hole 172 partially exposing the drain electrode 155 by partially etching the second interlayer insulating layer 160, the third interlayer insulating layer 165, and the insulating layer 170 is formed. The first gate insulating layer 130, the second gate insulating layer 140, the first interlayer insulating layer 145, the second interlayer insulating layer 160, the third interlayer insulating layer 165, and the insulating layer 170 can be formed at the same time. ) May be partially etched to form the opening 174 partially exposing the transmission region II of the substrate 110. The contact hole 172 and the opening 174 may be formed by the same dry or wet etching process using one mask. For example, the contact hole 172 and the opening 174 may be simultaneously formed by the same etching gas or the same etching solution. For example, the insulating layer 170 may be formed using an organic material, an inorganic material, or the like. Optionally, the insulating layer 170 may include a black material. Such a black material may be made of carbon black, phenylene black, aniline black, cyanine black, nigrosine black, black resin, and the like. The insulating layer 170 may be obtained using a spin coating process, a printing process, a sputtering process, a chemical vapor deposition process, an atomic layer lamination process, a plasma enhanced chemical vapor deposition process, a high density plasma-chemical vapor deposition process, a vacuum deposition process, etc. I can. Accordingly, the transmissive regions (II) adjacent to each other through one pixel region (I) may be designed to have an asymmetric shape by the insulating layer 170, respectively. For example, transmission regions II adjacent to each other around one pixel region I may have different areas as they have different widths and/or lengths. As described above, since the transmissive regions II spaced apart at a predetermined interval through the pixel region I have a predetermined width difference W1 and/or a length difference D1, the organic light emitting display device 100 The periodicity of the transmissive region (II) can be weakened or substantially eliminated. As a result, it is possible to suppress diffraction or interference of light passing through the transmission region (II) of the organic light-emitting display device 100, and thus objects and/or images located on the opposite side of the organic light-emitting display device 100 Can be prevented from being distorted and displayed.

Referring back to FIG. 5, the first electrode 175 may be formed on the insulating layer 170 while filling the contact hole 172. The first electrode 175 may be made of a reflective material. Optionally, the first electrode 175 may be formed of a material having transmittance.

Referring to FIG. 6, a pixel defining layer 180 including a pixel opening 182 partially exposing the first electrode 155 may be formed on the first electrode 175 and the insulating layer 170. . In example embodiments, the pixel defining layer 180 may extend along a sidewall of the above-described opening 174. For example, the pixel defining layer 180 may include a black material. The black material that can be used as the pixel defining layer 180 may be carbon black, phenylene black, aniline black, cyanine black, nigrosine black, black resin, or the like. The pixel defining layer 180 may be formed on the insulating layer 170 using a printing process, a spray process, a spin coating process, a chemical vapor deposition (CVD) process, or the like. Accordingly, areas of the transmissive regions II exposed by the pixel defining layer 180 disposed along the sidewall of the opening 174 may be different from each other. As a result, among the pixel regions (I), the transmissive regions (II) adjacent to each other via at least one pixel region (I) are asymmetric by the pixel defining layer 180 disposed on the sidewall of the opening 174, respectively. It can have a typical shape. For example, since the transmissive regions II spaced apart at a predetermined interval through the pixel region I have different widths and/or lengths, the adjacent transmissive regions II have a predetermined width difference W1 and / Or may have a length difference (D1). Accordingly, the periodicity of the transmissive region (II) may be deteriorated. As a result, the phenomenon that objects and images located on the rear surface of the organic light emitting display device 100 are distorted due to diffraction or interference of light passing through the transmission region (II) of the organic light emitting display device 100 may be substantially reduced. I can.

Referring back to FIG. 7, the organic light emitting structure 185 may be formed on the first electrode 175 exposed through the pixel opening 182 of the pixel defining layer 180. Also, the organic light emitting structure 185 may extend along a sidewall of the pixel opening 182 of the pixel defining layer 180. The second electrode 190 may include a material substantially identical to the first electrode 175, but is not limited thereto. Optionally, the second electrode 190 and the first electrode 175 may be made of different materials.

8 is a cross-sectional view illustrating an organic light emitting display device according to other exemplary embodiments of the present invention. The organic light emitting display device 200 illustrated in FIG. 8 may have a configuration substantially the same as or similar to the organic light emitting display device 100 described with reference to FIG. 1 except for the black matrix 220. Accordingly, in FIG. 2, detailed descriptions of components that are substantially the same as those described with reference to FIG. 1 will be omitted.

Referring to FIG. 8, the organic light emitting display device 200 includes a substrate 210, a black matrix 220, thin film transistors, an insulating layer 270, and first electrodes 265. , A pixel defining layer 280, organic light emitting structures 275, a second electrode 280, and the like.

A black matrix 220 may be disposed on the buffer layer 215. The black matrix 220 may define a pixel region (I) and a transmissive region (II), and at the same time function as a light shielding film. However, in FIG. 8, although it is illustrated that the black matrix 220 is disposed in an area substantially similar to the light blocking member 120 illustrated in FIG. 1, the black matrix 220 is a transmissive area than the light blocking member 120. As it extends further to (II), the shape of the transmissive region (II) can also be defined as compared to the light blocking member 120 that serves only as a light blocking film. In example embodiments, the black matrix 220 may include a black material. Black materials that can be used as the black matrix 220 may include carbon black, phenylene black, aniline black, cyanine black, nigrosine black, black resin, and the like. Accordingly, the areas of the transmissive regions II exposed by the black matrix 220 may be different from each other. As a result, the transmissive regions II adjacent to each other through at least one of the pixel regions I may be defined to have an asymmetric shape, and may have different widths and/or lengths. As described above, since the transparent regions II adjacent to each other along the first direction through the pixel region I have a predetermined width difference W1 and/or a length difference D1, the transmission region II is You can get rid of the periodicity you have. As a result, diffraction interference of light passing through the transmission region II of the organic light emitting diode display 200 may be substantially reduced.

The organic light emitting display device 200 according to exemplary embodiments of the present invention may include a plurality of transmissive regions II each of which is designed to have an asymmetric shape by the black matrix 220. Accordingly, compared to a conventional organic light emitting diode display device having transmission regions disposed at regular intervals and having a symmetrical shape, diffraction interference of light passing through the transmission regions II can be alleviated. Accordingly, when the organic light emitting display device 200 is in the off state, objects and/or images located on the opposite side of the organic light emitting display device 200 may be more clearly implemented through the transmissive regions II.

An insulating layer 270 may be disposed on the third interlayer insulating layer 265. According to exemplary embodiments, the first gate insulating layer 230, the second gate insulating layer 240, the first interlayer insulating layer 245, the second interlayer insulating layer 260, the third interlayer insulating layer 265, and the insulating layer The opening 274 exposing the transparent region II of the substrate 210 may be formed by partially etching the 270.

As described above, the organic light emitting display device 200 illustrated in FIG. 8 may include an opening 274 that partially exposes the transmissive region of the substrate 210. In addition, a black matrix 220 may be provided that includes a black material to define each of the transparent regions adjacent to each other through the pixel region to have an asymmetric shape. The black matrix 215 may be disposed on the substrate 210 within the pixel region (I), but may not be disposed within the opening 274. Accordingly, since the areas of the transmissive regions (II) are designed differently, the periodicity of the transmissive regions (II) can be effectively suppressed. Accordingly, a distortion phenomenon in which objects or images opposite to the organic light emitting display device 200 appear blurred or overlapped may be prevented.

9 to 13 are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to other exemplary embodiments of the present invention.

Referring to FIG. 9, a buffer layer 215 may be formed on the substrate 210.

Subsequently, the black matrix 220 may be formed on the buffer layer 215 formed in the pixel region (I) of the substrate 210. In exemplary embodiments, the black matrix 220 may be obtained using a black material including carbon black, phenylene black, aniline black, cyanine black, nigrosine black, black resin, and the like. For example, the black matrix 220 may be formed through a printing process, an inkjet process, a spin coating process, or the like. Accordingly, areas of the transmissive regions II exposed by the black matrix 220 may be different. As a result, the transmissive regions (II) adjacent to each other with the center of one pixel region (I) may be designed to have an asymmetric shape by the black matrix 220, and light incident from the outside may be blocked. . The process for forming the black matrix 220 is substantially the same as or substantially similar to the processes for forming the light blocking member 120 described with reference to FIG. 2.

An active pattern 225 may be formed on the black matrix 220. The active pattern 225 may be obtained using silicon, an oxide semiconductor, or the like.

Referring back to FIG. 9, a first gate insulating layer 230 covering the active pattern 225 may be formed on the buffer layer 215. The first gate insulating layer 230 may be formed using a silicon compound such as silicon oxide or silicon carbonate.

A gate electrode 235 may be formed on the first gate insulating layer 230. The gate electrode 235 may overlap the active pattern 225 through the first gate insulating layer 230. The gate electrode 235 may be formed using a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. A source region 226, a drain region 227, and a channel region 228 may be formed in the active pattern 225 by implanting impurities into the active pattern 225 using the gate electrode 235 as masks.

The second gate insulating layer 140 may cover the gate electrode 235 and may be formed on the first gate insulating layer 230. The second gate insulating layer 240 may be formed of substantially the same material as the first gate insulating layer 230.

The first interlayer insulating layer 245 may be formed on the second gate insulating layer 240. The first interlayer insulating film 245 may be obtained using a silicone compound, a transparent resin, or the like.

The first interlayer insulating layer 245 may be partially etched to form contact holes exposing the source region 232 and the drain region 234 of the active pattern 225. A source electrode 250 and a drain electrode 255 may be formed on the first interlayer insulating layer 245 while filling these contact holes.

A source electrode 250 connected to the drain region 227 of the active pattern 225 and a drain electrode 255 connected to the source region 226 of the active pattern 225 are formed on the first interlayer insulating layer 245 can do.

Referring to FIG. 10, the second interlayer insulating layer 260 may be formed on the first interlayer insulating layer 245 while covering the source and drain electrodes 250 and 255, and the third interlayer insulating layer 265 is It may be formed on the two interlayer insulating layer 260. Each of the second interlayer insulating layer 260 and the third interlayer insulating layer 265 may be formed of substantially the same material as the first interlayer insulating layer 245.

Referring to FIG. 11, an insulating layer 270 may be formed on the third interlayer insulating layer 265 while covering the thin film transistor. For example, the insulating layer 270 may be formed by partially etching the second interlayer insulating layer 260, the third interlayer insulating layer 265, and the insulating layer 270 to form the drain electrode 255 in exemplary embodiments. A contact hole 272 partially exposed may be formed. At the same time, the first gate insulating film 230, the second gate insulating film 240, the first interlayer insulating film 245, the second interlayer insulating film 260, the third interlayer insulating film 265 and the insulating layer 270 are partially formed. By etching, an opening 274 exposing the transparent region II of the substrate 210 may be formed. The contact hole 272 and the opening 274 may be formed by the same dry or wet etching process using one mask. For example, the contact hole 272 and the opening 274 may be simultaneously formed by the same etching gas or the same etching solution.

Referring back to FIG. 11, the first electrode 275 may be formed on the insulating layer 270 while filling the contact hole 272. The first electrode 275 may be formed of a material having reflectivity or transmittance, such as a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

Subsequently, a pixel defining layer 280 having a pixel opening 282 may be formed on the first electrode 275 and the insulating layer 270. In this case, the pixel defining layer 280 may extend along the sidewall of the opening 274. For example, the pixel defining layer 280 may be formed of an organic material, an inorganic material, or the like.

Referring to FIG. 12, an organic light emitting structure 285 may be formed on the first electrode 275 exposed through the pixel opening 282 of the pixel defining layer 280. Also, the organic light emitting structure 285 may extend along a sidewall of the pixel opening 282 of the pixel defining layer 280.

In the above description, the organic light emitting display device and the manufacturing method of the organic light emitting display device according to exemplary embodiments of the present invention have been described with reference to the drawings, but the above-described embodiments are illustrative and described in the claims. Modifications, modifications, and changes may be made by those of ordinary skill in the relevant technical field without departing from the technical spirit of the present invention.

The present invention can be applied to various electronic devices including a transparent organic light emitting display device. For example, the present invention can be applied to various electronic devices such as a commercial refrigerator, a smart window, a transparent tablet, a head-up display device, and a wearable display device.

100, 200: organic light emitting display device
110, 210: substrate
115, 215: buffer layer
120: light blocking member
220: black matrix
125, 225: active pattern
130, 230: first gate insulating layer
135, 235: gate electrode
140, 240: second gate insulating layer
145, 245: first interlayer insulating film
150, 250: source electrode
155, 255: drain electrode
160, 260: second interlayer insulating film
165, 265: third interlayer insulating film
170, 270: insulating layer
172, 272: contact hole
174, 274: opening
175, 275: first electrode
180, 280: pixel defining layer
182, 282: pixel aperture
185, 285: organic light emitting structure
190, 290: second electrode
195, 295: second substrate

Claims (9)

A substrate including a plurality of pixel regions and a plurality of transmissive regions;
Thin film transistors disposed in the pixel regions;
An insulating layer disposed on the thin film transistors;
First electrodes disposed on the insulating layer and electrically connected to the thin film transistors;
A pixel defining layer disposed on the first electrodes;
Organic light emitting structures disposed on the pixel defining layer; And
Including a second electrode disposed on the organic light emitting structures,
An organic light emitting diode display device wherein adjacent transmissive regions among the transmissive regions have different widths or different lengths. The organic light emitting diode display of claim 1, wherein the adjacent transmissive regions are disposed with at least one of the pixel regions interposed therebetween. The organic light-emitting display device of claim 1, wherein the pixel defining layer defines the adjacent transmissive regions. The organic light-emitting display device of claim 3, wherein the pixel defining layer comprises a black material. The organic light-emitting display device of claim 1, wherein the insulating layer defines the adjacent transmissive regions. The organic light-emitting display device of claim 5, wherein the insulating layer comprises a black material. The organic light-emitting display device of claim 1, further comprising a light blocking member disposed between the substrate and the thin film transistors. The organic light-emitting display device of claim 7, wherein the light blocking member defines the adjacent transmissive regions. The organic light-emitting display device of claim 8, wherein the light blocking member comprises a black material.

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