KR20210016368A - Lithographic apparatus - Google Patents

Abstract

A lithographic apparatus is disclosed, comprising: an illumination system configured to adjust a radiation beam; A patterning device 601 configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam; A pellicle 602 configured to cover the surface of the patterning device 601; A substrate table configured to hold a substrate; A projection system configured to project the patterned radiation beam onto a target portion of the substrate when the substrate is held by the substrate table, the projection system including one or more optical elements; One or more outlets 603 of a first set for discharging a first fluid into a first region abutting the pellicle 602 and/or containing the pellicle; And a second set of one or more outlets 605 configured to output a second fluid into a second region comprising one or more optical elements of the projection system, the second fluid being different from the first fluid. Advantageously, the fluid in the first area protects the pellicle 602 from damage by the fluid in the second area. Therefore, a pellicle that would otherwise be damaged by the fluid in the second area can be used.

Description

Lithographic apparatus

This application claims the priority of EP application 18175342.7, filed May 31, 2018, which application is hereby incorporated by reference in its entirety.

The present invention relates to a lithographic apparatus. In particular, the techniques disclosed herein relate to providing a pellicle to a lithographic apparatus used with EUV radiation.

A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually a target portion of the substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In the manufacture of ICs, patterning devices (also called masks or reticles) are used to create circuit patterns to be formed on individual layers of the IC. This pattern can be transferred onto a target portion (eg, part of several dies, including one or several dies) on a substrate (eg, a silicon wafer). Transfer of the pattern is generally through imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. The known lithographic apparatus comprises a so-called stepper, in which the entire pattern is exposed onto the target portion at a time to irradiate each target portion, and the known lithographic apparatus also includes a so-called scanner, in which , Each target portion is irradiated by scanning the pattern through the radiation beam in a given direction ("scanning" direction) and also synchronously scanning the substrate parallel or antiparallel to that direction.

The theoretical estimate of the limits of pattern printing can be given by the Rayleigh criterion for resolution as shown by equation (1) below:

CD = k_1*λ/NA (1)

Here, λ is the wavelength of the radiation used, NA is the numerical aperture of the projection system used to print the pattern, k1 is the process-dependent control factor (also known as the Railay constant), and CD is the printed feature. Is the feature size (or critical dimension). According to Equation (1), the reduction in the minimum printable size of the feature can be obtained in three ways, i.e. by shortening the exposure wavelength (λ), increasing the numerical aperture (NA), or by decreasing the k1 value. I can.

To reduce the minimum printable size by shortening the exposure wavelength, it has been proposed to use an extreme ultraviolet (EUV) radiation source. EUV radiation is electromagnetic radiation having a wavelength within 4-20 nm, such as within 13-14 nm, such as within 4-10 nm, such as 6.7 nm or 6.8 nm. Possible sources include, for example, laser generated plasma sources, discharge plasma sources, or sources based on synctron radiation provided by an electron storage ring.

EUV radiation can be produced using plasma. A radiation system for generating EUV radiation may include a laser for providing plasma by exciting fuel, and a source collector module for receiving the plasma. Plasma can be created, for example, by directing a laser to a fuel such as droplets of a suitable material (eg, tin) or a stream of suitable gas or vapor (eg, Xe or Li vapor). The resulting plasma emits output radiation (eg EUV radiation), which is collected using a radiation collector. The radiation collector may be a mirror-type normal incident radiation collector, which receives radiation and focuses the radiation into a beam. The source collector module may include an enclosing structure or chamber disposed to provide a vacuum environment supporting the plasma. Such radiation systems are typically referred to as laser generated plasma (LPP) sources.

One known problem in EUV lithographic apparatus is contamination of the patterning apparatus. In EUV lithographic apparatus, a purge gas flows toward the patterning apparatus at high speed and can entrain molecules and particles up to the size of a micrometer. In some lithographic apparatus, a pellicle may be provided to protect the patterning apparatus. This pellicle is a transparent film covering the patterning device. However, the use of a pellicle with EUV radiation is a problem because the EUV radiation is absorbed a lot by the pellicle, reducing the efficiency of the system.

According to a first aspect of the present invention, a lithographic apparatus is provided, comprising: an illumination system configured to adjust a radiation beam; A patterning device configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam; A pellicle configured to cover the surface of the patterning device; A substrate table configured to hold a substrate; A projection system configured to project the patterned radiation beam onto a target portion of the substrate when the substrate is held by the substrate table, the projection system including one or more optical elements; One or more outlets of a first set for discharging a first fluid into a first region abutting the pellicle and/or containing the pellicle; And a second set of one or more outlets configured to output a second fluid into a second region comprising one or more optical elements of the projection system, the second fluid being different from the first fluid, and optionally, a patterning device, a pellicle. , One or more outlets of a first set, one or more outlets of a second set and a substrate table, when in use, a patterned radiation beam coming out of the patterning device, abutting the first region and/or contained in the region. It is arranged to pass through the pellicle and then pass through the second region and proceed onto the substrate held by the substrate table.

In one embodiment, one or more outlets of the first set are configured to provide a first gaseous environment to the first area, the first gaseous environment shielding the pellicle from the second area, or in other words, the first The gaseous environment prevents fluid in the second zone from reaching the pellicle.

Preferably, the first fluid is a gas that is inert and/or chemically neutral to the pellicle.

Preferably, the first fluid comprises one or more of helium, neon, argon or nitrogen.

Preferably, the second fluid comprises a plasma such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system.

Preferably, the second fluid comprises hydrogen radicals.

In one embodiment, the second fluid comprises a gas and/or plasma that degrades the pellicle.

Advantageously, the lithographic apparatus further comprises a patterning apparatus support arranged to support the patterning apparatus, and the pellicle is coupled to the patterning apparatus support.

Preferably, one or more outlets of the second set are disposed between one or more outlets of the first set and one or more optical elements of the projection system.

Advantageously, the lithographic apparatus further comprises a first set of one or more inlets disposed in the first area for removing fluid from the first area.

Preferably, one or more inlets of the first set are arranged on the opposite side of the pellicle with respect to one or more outlets of the first set, so that in use there is a cross flow of the first fluid across the pellicle.

Advantageously, the lithographic apparatus further comprises at least one inlet of a second set disposed in the second area for removing fluid from the second area.

Preferably, the inlet of the second set is arranged on the opposite side of the projection system with respect to the outlet of the second set, so that in use there is a cross flow of the second fluid across the projection system.

Preferably, the pellicle is carbon-based. In this embodiment, the first fluid may comprise a carbon containing gas, ie a gas containing a carbon compound.

Preferably, the pellicle comprises at least one of carbon nanotubes and diamonds.

Preferably, the lighting system is configured to control extreme ultraviolet, EUV, and radiation beams.

Preferably, at least one of the at least one optical element is a mirror.

Advantageously, the lithographic apparatus further comprises a control system configured to select a first fluid output from one or more outlets of the first set, depending on the type of the pellicle used.

According to one embodiment, the lithographic apparatus further comprises a first fluid supply comprising a first fluid and a second fluid supply comprising a second fluid, wherein the first fluid supply is in fluid connection with one or more outlets of the first set. And the second fluid supply is in fluid communication with one or more outlets of the second set. The first and/or second fluid supply may include, for example, first and second containers respectively, but alternatively or additionally, may each include first and second fluid connectors for coupling the fluid supply system. .

According to a second aspect of the invention, a method is provided, the method comprising: adjusting a radiation beam; A patterning device having a surface covered with a pellicle, comprising: forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam; A projection system comprising one or more optical elements, the method comprising: projecting the patterned radiation beam onto a target portion of a substrate; Outputting, to one or more outlets of the first set, a first fluid into a first region abutting and/or containing the pellicle; And outputting, to one or more outlets of the second set, a second fluid into a second region comprising one or more optical elements of the projection system, wherein the second fluid is different from the first fluid and, optionally, patterning. A device, a pellicle, one or more outlets of a first set, one or more outlets of a second set, and a substrate table, when in use, a patterned radiation beam exiting the patterning device, abutting the first area and/or in the area. It is arranged to pass through the contained pellicle, then pass through the second region, and advance onto the substrate held by the substrate table.

In one embodiment, outputting the first fluid into the first region creates a first gaseous environment that shields the pellicle from the second region, or in other words, prevents the fluid in the second region from reaching the pellicle. It is formed in the first region.

Preferably, the method is carried out with the lithographic apparatus according to the first aspect of the invention.

Advantageously, the method further comprises selecting a first fluid output by one or more outlets of the first set, depending on the type of the pellicle used.

In embodiments where the pellicle is carbon-based, the first fluid may include a carbon-containing gas.

According to a third aspect of the present invention, a lithographic apparatus is provided, comprising: an illumination system configured to adjust a radiation beam; A patterning device configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam; A substrate table configured to hold a substrate in the substrate area; A projection system configured to project the patterned radiation beam onto a target portion of the substrate when the substrate is held by the substrate table, the projection system including one or more optical elements; One or more outlets of a second set configured to output a second fluid into a second region comprising one or more optical elements of the projection system; And one or more outlets of a third set for outputting a third fluid into a third region abutting the substrate region and/or comprising the substrate region, wherein the second fluid is different from the third fluid, and One or more outlets are configured, for example, to provide a third gaseous environment to the third area, the third gaseous environment shielding the substrate from the second area.

In one embodiment, the substrate region includes a film configured to cover the surface of the substrate, and the third region abuts and/or includes the film. In this embodiment, the third set of one or more outlets provides a third gaseous environment to the third area, and the third gaseous environment shields the membrane from the second area.

Optionally, a patterning device, a projection system, a second set of one or more outlets, a third set of one or more outlets, and a substrate table, when in use, a projection system comprising a second region from which the patterned radiation beam exits the patterning device. It is arranged so as to pass through, pass through the third region, and advance onto the substrate held by the substrate table.

Preferably, the third fluid is a gas that is inert and/or chemically neutral to the substrate.

Preferably, the third fluid comprises one or more of helium, neon, argon or nitrogen.

According to one embodiment, the second fluid comprises a gas and/or plasma that degrades the substrate.

Preferably, the second fluid comprises a plasma such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system.

Preferably, the second fluid comprises hydrogen radicals.

Advantageously, the lithographic apparatus further comprises a third set of one or more inlets disposed in the third area for removing fluid from the third area.

Preferably, the at least one inlet of the third set is disposed on the opposite side of the substrate relative to the at least one outlet of the third set, so that there is a cross flow of the third fluid across the substrate in use.

Advantageously, the lithographic apparatus further comprises a second set of one or more inlets disposed in the second region for removing fluid from the second region.

Preferably, the at least one inlet of the second set is arranged on the opposite side of the projection system with respect to the at least one outlet of the second set, so that in use there is a cross flow of the second fluid across the projection system.

Preferably, the lighting system is configured to control extreme ultraviolet, EUV, and radiation beams.

Preferably, at least one of the at least one optical element is a mirror.

The lithographic apparatus further includes a control system configured to select a third fluid output from one or more outlets of the third set, depending on the type of substrate or film used.

According to one embodiment, the lithographic apparatus further comprises a second fluid supply comprising a second fluid and a third fluid supply comprising a third fluid, wherein the second fluid supply is in fluid connection with one or more outlets of the second set. And the third fluid supply is in fluid communication with one or more outlets of the third set.

The third aspect of the present invention can be applied in combination with the first and/or second aspect of the present invention.

According to a fourth aspect of the invention, a method is provided, the method comprising: adjusting a radiation beam; A patterning apparatus comprising: forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam; A projection system comprising one or more optical elements, the method comprising: projecting the patterned radiation beam onto a target portion of a substrate held in a substrate area; Outputting, to one or more outlets of the second set, a second fluid into a second region comprising one or more optical elements of the projection system; And outputting, to one or more outlets of the third set, a third fluid into a third region abutting the substrate region and/or into a third region comprising the substrate region, wherein the second fluid is different from the third fluid, The third fluid output into the third region provides a third gaseous environment to the third region, for example, and the third gaseous environment shields the substrate from the second region.

In one embodiment, the substrate region includes a film configured to cover the surface of the substrate, and the third region abuts and/or includes the film. In one embodiment, the third fluid output into the third region provides a third gaseous environment to the third region, for example, and the third gaseous environment shields the membrane from the second region.

Optionally, a patterning device, a pellicle, a second set of one or more outlets, a third set of one or more outlets and a substrate, wherein a patterned radiation beam exits the patterning device, passes through the second region, and a third It is arranged so as to pass through the area and advance onto the substrate held by the substrate table.

Preferably, the method is carried out with a lithographic apparatus according to the third aspect of the invention.

Preferably, the method further includes selecting a third fluid output by the third set of one or more outlets, depending on the type of substrate or film used.

The fourth aspect of the present invention can be applied in combination with the first and/or second aspect of the present invention.

Further features and advantages of the present invention and the structure and operation of various embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be noted that the present invention is not limited to the specific embodiments described herein. Such embodiments are given here for illustrative purposes only. Further embodiments based on the teachings contained herein will be apparent to those skilled in the art.

The accompanying drawings, which are incorporated herein and form a part of this specification, illustrate the invention and, together with the description section, serve to explain the principles of the invention and to enable any person skilled in the art to make and use the invention.
1 schematically shows a known lithographic apparatus.
2 shows the pressure region of a known lithographic apparatus.
3 shows a feature of a known lithographic apparatus in a side view.
4 shows a known arrangement of a patterning device assembly and masking blade.
5 shows in plan view a known arrangement of a patterning device assembly and masking blade.
6 shows providing a lithographic apparatus with a first region and a second region according to an embodiment of the first aspect of the present invention.
7 shows a flow chart of a method according to an embodiment of the second aspect of the present invention.
8 is a side view showing an arrangement of an outlet and an inlet of the substrate table and the third set according to the embodiment of the third aspect of the present invention.
9 shows the arrangement of FIG. 8 in a plan view.
10 illustrates providing a second region and a third region to a lithographic apparatus according to an embodiment of the third aspect of the present invention.
Features and advantages of the invention will become more apparent from the detailed description given below in conjunction with the drawings, in which like reference numerals designate corresponding elements throughout. In the drawings, similar reference numerals generally indicate identical, functionally similar and/or structurally similar elements. The first degree in which an element appears is indicated by the leftmost digit(s) in the corresponding reference number.

This specification discloses one or more embodiments that incorporate features of the invention. The disclosed embodiment(s) are merely illustrative of the present invention. The scope of the present invention is not limited to the disclosed embodiment(s). The invention is defined by the claims appended hereto.

When referred to as the described embodiment(s), and in the specification as "one embodiment", "one embodiment", "one exemplary embodiment", etc., this means that the described embodiment(s) is a specific feature, structure, or Features may include, but indicates that not all embodiments need to include that particular feature, structure, or characteristic Moreover, such phrases are not necessarily referring to the same embodiment. When described in connection with an embodiment, whether explicitly described or not, it will be appreciated that making such a feature, structure, or characteristic in connection with other embodiments is within the knowledge of those skilled in the art.

Embodiments of the present invention may be implemented in hardware, firmware, software, or a combination thereof. Embodiments of the present invention may also be implemented as instructions stored in a machine-readable medium, and the instructions may be read and executed by one or more processors. Machine-readable media may include mechanisms for storing or transmitting information in a machine-readable form (eg, a computing device). For example, a machine-readable medium may include read-only memory (ROM); Random access memory (RAM); Magnetic storage media; Optical storage media; Flash memory device; Electrical, optical, acoustic, or other types of radio signals (eg, carrier waves, infrared signals, digital signals, etc.) may be included. Also, firmware, software, routines, and instructions may be described herein as performing specific actions. However, it should be understood that such description is for convenience only and that such actions are in fact manifested due to a computing device, processor, controller, or other device executing firmware, software, routines, instructions, and the like.

However, before describing such an embodiment in more detail, it is educational to present an example of an environment in which the embodiment of the present invention can be implemented.

1 schematically shows a lithographic apparatus LAP comprising a source collector module SO. The apparatus comprises: an illumination system (illuminator) IL configured to regulate a radiation beam B (eg EUV radiation); A support structure (e.g., a mask table) MT configured to support a patterning device (e.g., a mask or patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device ; A substrate table (eg, a wafer table) WT configured to hold a substrate (eg, a resist coated wafer) W and connected to a second positioner PW configured to accurately position the substrate; And a projection system configured to project a pattern imparted to the radiation beam PB by the patterning device MA onto a target portion C of the substrate W (e.g., comprising one or more dies) (e.g., Reflective projection system) (PS).

The illumination system may include various types of optical elements, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical elements or combinations thereof for guiding, shaping or controlling radiation.

The support structure MT includes a portion for receiving and holding the patterning device MA according to the orientation of the patterning device, the design of the lithographic device, and other conditions, such as whether the patterning device is maintained in a vacuum environment. . The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to support the patterning device. The support structure can be, for example, a frame or a table that can be fixed or movable as required. The support structure ensures that the patterning device is, for example, in the required position for the projection system.

The term "patterning device" is to be broadly interpreted as referring to any device that can be used to impart a pattern to the cross section of the radiation beam to form a pattern in the target portion of the substrate. The pattern imparted to the radiation beam may correspond to a particular functional layer in a device formed in the target portion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography and include mask types such as binary, alternating phase shift, and attenuated phase shift, and various hybrid mask types. An example of a programmable mirror array uses a matrix arrangement of small mirrors, each mirror can be individually tilted to reflect an incident radiation beam in a different direction. The tilted mirror imparts a pattern to the beam of radiation reflected by the mirror matrix.

The projection system, similar to the lighting system, is a refractive, reflective, magnetic, electromagnetic, electrostatic or other kind of optical element, if appropriate for the exposure radiation used, or for other factors such as the use of vacuum. Or it may include various types of optical elements such as combinations thereof. It may be necessary to use vacuum for EUV radiation because other gases can absorb too much radiation. Therefore, a vacuum environment can be provided to the entire beam path with the aid of a vacuum vessel and a vacuum pump.

As described herein, the lithographic apparatus is reflective (i.e., using a reflective mask and reflective optics in the illuminator IL and projection system PS).

A lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such "multi-stage" machines, additional tables may be used in parallel, or while one or more other tables are being used for exposure, a preparatory step may be performed on one or more tables.

Referring to FIG. 1, the illuminator IL receives an EUV radiation beam from an EUV source SO. Methods of generating EUV radiation include, but are not necessarily limited to, converting the material to a plasma state with at least one chemical element, e.g., xenon, lithium or tin having one or more emission lines in the EUV range. . In this method (sometimes referred to as laser generated plasma (LPP)), the required plasma can be generated by irradiating a laser beam into a fuel path, such as a droplet of material having the required prior-emitting element. The EUV source SO may be a portion of an EUV radiation source including a laser (not shown in FIG. 1) to provide a laser beam that excites the fuel. The resulting plasma emits output radiation, such as EUV radiation, which is collected using a radiation collector placed in the EUV source.

For example, when a CO2 laser is used to provide a laser beam for excitation of fuel, the laser and EUV source can be separate from each other. In this case, the radiation beam is delivered from the laser to the EUV source with the aid of a beam delivery system, the delivery system comprising for example a suitable guide mirror and/or a beam expander. The laser and fuel supply can be thought of as including an EUV radiation source.

The illuminator IL may include an adjuster for adjusting the angular intensiy distribution of the radiation beam. In general, at least the outer and/or inner radial extent of the intensity distribution in the pupil plane of the illuminator (commonly referred to as σ-outside and σ-inside, respectively) can be adjusted. Additionally, the illuminator IL may include various other components such as facetted fields and pupil mirror devices. An illuminator can be used to adjust the radiation beam to have the required uniformity and intensity distribution in its cross-section.

The radiation beam PB is incident on the patterning device (eg, mask) MA held on the support structure (eg, mask table) MT, and is patterned by the patterning device. The patterning device MA may be positioned using a first positioning device such as an interferometer IF1 and mask alignment marks M1 and M2. The patterned radiation beam PB, after being reflected from the patterning device (e.g., mask) MA, passes through the projection system PS, which is the target portion C of the substrate W. Focus on the phase. With the aid of a second positioning device, such as interferometer IF2 and substrate alignment marks P1, P2 (e.g., using an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be changed to a different target It can be moved precisely to position the part C in the path of the radiation beam PB.

The device shown may be used in at least one of the following modes.

1. In step mode, while the entire pattern imparted to the radiation beam is projected onto the target portion C at once, the support structure (e.g., mask table) MT and the substrate table WT remain essentially motionless. Becomes (i.e., a single static exposure). Then, the substrate table WT is moved in the X and/or Y directions so that the other target portion C can be exposed.

2. In the scan mode, the support structure (e.g., mask table) MT and the substrate table WT are synchronously scanned while the pattern imparted to the radiation beam is projected onto the target portion C (ie, a single Dynamic exposure). The speed and direction of the substrate table WT relative to the support structure (eg, mask table) MT may be determined by the magnification (or reduction ratio) and image reversal characteristics of the projection system PL.

3. In another mode, while the pattern imparted to the radiation beam is projected onto the target portion C, the support structure (e.g., mask table) MT remains essentially immobile while holding the programmable patterning device. , The substrate table WT is moved or scanned. In this mode, a generally pulsed radiation source is used, and the programmable patterning device is updated as needed after each movement of the substrate table WT or between successive radiation pulses during a scan. This mode of operation can be easily applied to maskless lithography using a programmable patterning device such as a programmable mirror array of the kind as mentioned above.

2 schematically shows a known device. Figures 3 to 5 show a portion of this device in more detail. The apparatus of FIG. 2 comprises a first chamber 101 containing an illumination system IL and a projection system PS. The illumination system IL is configured to adjust the radiation beam received from the source SO, and the projection system PS is configured to project the patterned radiation beam PB onto the target portion of the substrate W. . The first chamber 101 also houses a patterning device support configured to support the patterning device MA, which patterning device MA can form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam. . The second chamber 102 contains a wafer stage, and only the substrate W is shown for its clarity.

Figure 2 shows how a lithographic apparatus can be divided into four different vacuum environments (VE1-VE4). The first chamber 101 defines a first vacuum environment VE1 surrounding the patterning device stage (only the patterning device MA is shown for its clarity). The first chamber 101 also includes a separator structure 103 defining two additional vacuum environments: VE2 to receive illumination system IL and VE3 to receive projection system PS. The vacuum environment (VE2, VE3) can be further divided. The separator structure 103 comprises a sleeve 105 having an aperture 104, which aperture transfers the projection beam PB from the illumination system IL to the patterning device MA and is also a patterned radiation beam. From the patterning device MA to the projection system PS. The sleeve 105 serves to direct the gas flow downward (i.e. away from the patterning device) and also to keep the gas flow even to avoid disturbing the EUV radiation intensity. The sleeve may be tapered towards the patterning device MA. The second chamber 102 defines a vacuum environment VE4 that houses a wafer stage (only the substrate W is shown for its clarity). Vacuum environments VE1 and VE2 are formed and maintained by respective vacuum vessels and vacuum pumps VP1 and VP2, which pumps may also be a plurality of vacuum pumps.

As shown in FIG. 2, the vacuum pump VP1 maintains the vacuum environment VE1 at a lower pressure than the vacuum environments VE2 and VE3. A clean gas (eg, hydrogen, helium, nitrogen, oxygen or argon) is injected into the vacuum environment (VE2, VE3) using a gas injector (not shown). The vacuum pumps VP1 and VP2 are known to the person skilled in the art and can be connected to the lithographic apparatus in a variety of ways.

The separator structure 103 may be arranged in a variety of ways, for example, it may include a sleeve 105 extending toward the patterning device MA, the end of the sleeve 105 having a projection beam hole 104 Is provided, which extends towards the patterning device MA. Sleeve 105 with aperture 104 may have a tapered cross section.

The lithographic apparatus also comprises a radiation beam shaping apparatus, which apparatus comprises a patterning apparatus masking blade (REB) for controlling the dimensions of the projection beam PB. As shown in FIG. 4, such a blade REB extends during use at least in part between the patterning device MA and the aperture 104 of the separator structure 103.

3 shows a mask table MT holding a patterning device MA, and a blade REB-X and a blade positioned near the patterning device MA to control the shape of the projection beam in the X and Y directions. REB-Y). When viewed in the Z direction, the Y-blade REB-Y is positioned closer to the patterning device MA than the X-blade REB-X, but of course the blades can be arranged in different ways around. In the patterning device stage measurement frame RS-MF, a hole 4 is provided that allows the radiation beam to reach and be reflected by the patterning device MA.

The X-blade REB-X is located at a small distance 10a from the projection beam hole 4 when measured in the Z direction. This distance mentioned at the end is about 5 mm or less, and about 2 mm or less.

Further, the Y-blade REB-Y is located at a small distance 10b from the patterning device MA. The last mentioned distance is also about 5 mm or less when measured in the Z direction.

The smallest distance 10c between the X-blade and the Y-blade may be about 5 mm when measured in the Z direction.

4 and 5 show a schematic side view and a plan view of the patterning device assembly in more detail. As shown in Fig. 4, gas injection means including gas supply conduits 121 having respective gas outlets 120 are provided on both sides of the patterning device MA, and gases (especially hydrogen, helium, nitrogen , Oxygen or argon) sprayed in a direction parallel to the surface of the patterning zenithal (MA), in the direction of the arrow in the drawing, and substantially in the space between the patterning device (MA) and the blades (REB-X, REB-Y) Can be. By spraying the gas close to the patterning device surface, in particular into a confined space between the patterning device surface and the blades, contamination by components such as the blade itself and other components is substantially reduced. In addition, in an at least partially enclosed environment, it may be advantageous to provide a support structure for holding the patterning device at least near a confined space between the patterning device surface and the blade. In this configuration, due to the pressure created in the partially enclosed environment, more and more effective gas delivery to the projection optics compartment can be achieved.

One or more gas supply conduits are provided connected to the support structure. For example, the gas supply conduit is provided to extend downwardly through the support structure MT in a vertical direction (ie, in the z direction) or with an inclination forming an angle with the z direction. The outlet of the gas supply conduit is preferably oriented towards the patterning device surface, for example horizontally (ie in the X-Y plane). Figure 5 shows in particular three gas outlets 120, which are provided at equal intervals on each side of the patterning device. A gas supply conduit 121 is provided extending vertically (i.e. in the z direction) through the patterning device assembly, the outlet of which is oriented horizontally (i.e. in the XY plane), so that the patterning device ( In the space between MA) and blades REB-Y, hydrogen gas is supplied parallel to the surface of the patterning device MA. Other numbers of gas supply conduits and other arrangements may also be provided which achieve the same purpose of supplying gas between the patterning device and the blades in a direction parallel to the surface of the patterning device MA. However, the gas supply conduit is formed as part of the patterning device stage, so that even the large movement of the patterning device moves with the patterning device.

For example, the gas may be injected in the X or Y direction (as shown in the figure, the gas is injected in the X direction). In this case, since the conduit 121 less interferes with the motion of the patterning device stage, the gas is injected in the X direction. The gas is sprayed between the bullade (REB-Y blade in this case) closest to the patterning device, but may be sprayed between the REB-Y blade and the REB-X blade. Typically, the gas conduit is located at a distance of about 10 mm or less from the surface of the patterning device MA.

Inside the projection system PS, there are optical elements such as mirrors for guiding and/or adjusting the EUV radiation beam. It is known to supply hydrogen gas into the projection system PS in order to provide an environment that prevents oxidation and contamination of the optical elements. Hydrogen gas may be at least partially ionized under the influence of EUV radiation and may contain hydrogen radicals. Here, this environment is called hydrogen plasma, and may contain only hydrogen gas, a mixture of hydrogen gas and hydrogen radicals, or only hydrogen radicals.

Components of a known lithographic apparatus for performing a lithographic process with EUV radiation are as described above with reference to FIGS. 1 to 5. The patterning apparatus MA used in the known lithographic apparatus described above is not covered with a pellicle.

Known pellicles for use with EUV radiation are based on a polysilicon core. These pellicles show good resistance to working conditions, in particular to plasma environments. However, the problem with these pellicles is that the transmittance of EUV radiation passing through these pellicles is only about 75%-85%. Another problem is that it has a large spurious reflection of DUV radiation. The resist is sensitive to DUV radiation, so an additional spectral purity film is needed to suppress the effects of DUV reflection. Using this known pellicle, the total transmittance of the EUV radiation beam is reduced by about 50%.

A further problem is that DUV radiation is used for inspection of patterning devices. Therefore, the patterning device cannot be inspected when the polysilicon pellicle is positioned due to the poor transmittance of the DUV radiation passing through the pellicle. Therefore, it is necessary that the pellicle is easily removable so that the patterning device can be inspected, which makes mounting of the pellicle difficult and also worsens other implementation aspects.

The above-mentioned problems with polysilicon-based pellicles can be avoided by alternatively using a carbon substrate pellicle. The carbon-based pellicle has a high EUV transmittance of 95% or more and a low DUV reflectance, and the transmission of DUV radiation through the pellicle is sufficient for inspection of the patterning device when the pellicle is positioned. Some of the benefits of carbon-based pellicles are described in E. Gallagher et al., "CNT in the history of EUUV pellicles" (Proc. SPIE, 2018).

The problem with using carbon-based pellicles is that these pellicles cannot withstand working conditions. In particular, the carbon-based pellicle is severely degraded due to the highly reducing hydrogen plasma environment. The resistance of the carbon-based pellicle to working conditions can be improved by coating the pellicle with molybdenum or zirconium. However, when such a coating is applied, the transmittance through the pellicle is reduced, EUV scattering and reflection are increased, and the imaging properties and transmission of the radiation beam are greatly deteriorated.

An embodiment provides a lithographic apparatus that performs a lithographic process with EUV radiation. The patterning apparatus used in the lithographic apparatus according to the embodiment is covered with a pellicle.

The pellicle advantageously protects the patterning device by shielding it from particle and gas flow.

The pellicle is preferably thin and substantially passes through the radiation beam, so the pellicle does not substantially reduce the power of the radiation beam. The pellicle must also be able to withstand the operating conditions, ie the power of the radiation beam and the use of the plasma environment, without rapidly deteriorating.

The embodiment solves the above problem associated with the use of pellicles in EUV lithographic apparatus by providing at least a first and second region having a heterology characteristic to the path of the radiation beam.

The first area is substantially only the local environment of the pellicle. The first area is at least in contact with the surface of the pellicle and preferably comprises the pellicle. In the first region, a gaseous environment suitable for use of the carbon-based pellicle is provided without the need for a molybdenum or zirconium coating of the pellicle.

The second area is inside the projection system PS, but does not contain the local environment of the pellicle. The second area contains the optical elements of the projection system PS to which a plasma environment such as hydrogen plasma is provided, so that oxidation and contamination of the mirror are prevented.

Depending on the embodiment, a carbon-based coating is used. This carbon-based pellicle has high transmittance and high heat capacity, and is not deteriorated by the gaseous environment provided to the first region. The carbon-based pellicle can be constructed in any number of known ways and also from a range of carbon-based materials. For example, the pellicle can be formed for any of carbon nanotubes, graphene or diamond.

Advantageously, the pellicle according to the embodiment does not require a molybdenum or zirconium coating. Therefore, the total transmission of the EUV radiation beam is improved for that obtained when a polysilicon-based pellicle or a molybdenum or zirconium-coated carbon-based pellicle is used.

6 shows how the first and second regions can be provided according to an embodiment.

6, a patterning device 601, a pellicle 602 covering the patterning device 601, one or more outlets 603 of a first set, one or more outlets 605 of a second set, one of the first set. One or more inlets 604, a second set of one or more outlets 606, a first fluid supply 607 such as a container or connector in fluid communication with the first set of one or more outlets 603, and one of the second set. A second fluid supply portion 607 such as a container or connector in fluid connection with the above outlet 605 is shown.

6 may include a number of other components not shown. In particular, the optical element in the second area is not shown. There may be a physical separation sheet between the portion of the patterning device 601 and the optical element. Blades and other components may be provided, such as the blades shown in FIGS. 3 and 4. Although not fully shown in FIG. 6, there is also a patterning device support that holds the patterning device 601.

The one or more outlets 603 of the first set may be a plurality of outlets disposed along one side of the pellicle 602, such as shown along the side of the patterning device 601 in FIG. 5.

The gas exits the first set of one or more outlets 603 and enters the localized environment of the pellicle 602. The gases coming from the first set of one or more outlets 603 include inert gases and/or chemically neutral gases that do not degrade the carbon-based pellicle 602. For example, the gas may be any one of helium, neon, argon or nitrogen. Advantageously, the carbon-based pellicle 602 can withstand conditions within the local environment of the pellicle 602.

One or more inlets 604 of the first set are provided, preferably next to the pellicle 602, for degassing in a first area, ie the localized environment of the pellicle 602. One or more outlets 603 of the first set are preferably provided on the opposite side of the pellicle 602 with respect to one inlet of the first set. Therefore, the first region contains the cross flow of gas across the pellicle 602.

The at least one outlet of the second set discharges a gas and/or plasma into the second region, such as hydrogen plasma, known to be used in lithographic apparatus with EUV radiation.

At least one inlet 606 of the second set is preferably provided for removing gases and/or plasmas from the projection system PS. At least one gas inlet of the second set is preferably provided on the opposite side of the projection system PS with respect to one inlet of the second set, so that there is a cross flow of gas and/or plasma through the second region.

Although not shown in FIG. 6, the second area contains the optical elements of the projection system PS, and the at least one exit and inlet of the second set is at least one exit and the inlet of the first set and the optics of the projection system PS. It is placed between the elements.

Although not shown in FIG. 6, the lithographic apparatus includes one or more of a control system and conduits, valves and pumps to control fluid flow in and out of the first and second regions.

The first and second regions are not separated by a physical barrier that prevents fluid in the second region from entering the first region and reaching the pellicle 602. Therefore, the boundary between the first region and the second region is set as approximately where the concentration of fluid exiting the second region is large enough to cause substantial damage to the carbon-based pellicle. The boundary depends on how the fluid flow is controlled by the control system and also on the environment of the pellicle and projection system.

However, one or more outlets and inlets of the first set are located next to the pellicle 602, and the gases from the one or more outlets are guided across the pellicle 602, and also one or more outlets and inlets of the second set are provided. When positioned further away from the pellicle 602 than the one or more outlets and inlets of one set, the localized environment of the pellicle 602 is substantially composed of gases coming from the first set of one or more outlets 603, so The carbon-based pellicle 602 in or in contact with the one region is not substantially deteriorated. The first region may consist of at least 80%-90% of the gas from the one or more outlets 603 of the first set, which means that the carbon-based pellicle 602 is substantially degraded by the fluid from the second region. Enough to prevent it.

The control system controls a flow rate of fluid exiting from one or more first and/or second outlets and/or a flow rate of fluid exiting from one or more first and/or second inlets to control the flow rate of the first region in the direction of the radiation beam. You can control the width.

The first area can cover the entire surface of the pellicle 602 and preferably covers the entire pellicle 602. The first area should be thin in the direction of the radiation beam passing through the pellicle 602, so there is only a short path distance of the radiation beam passing through the first area. The width of the first region in the direction of the radiation beam is not large enough to substantially damage the pellicle 602 by the amount of fluid, i.e. gas and/or plasma, from the second region that is likely to reach the pellicle 602. Should be large enough to ensure that. However, the first area is preferably controlled by the control system such that it is not substantially wider than is necessary to achieve this so as to minimize the distance the radiation beam travels through the first area. Therefore, the deteriorating effect of the gas in the first region on the radiation beam (eg, absorption of EUV radiation) is minimized.

The amount of EUV radiation absorbed by the gas in the first region is relatively small. Due to the high permeability of the carbon-based pellicle 602 and a relatively small amount of absorption in the first region, an overall performance gain is obtained over known techniques using polysilicon-based pellicles or molybdenum or zirconium-coated carbon-based pellicles.

In the high-waste device according to the embodiment, the beam of EUV radiation patterned by the patterning device 601 moves from the surface of the patterning device 601, so that the carbon-based pellicle 602 has a high transmittance for EUV radiation. Will pass. The pellicle 602 abuts and/or is contained within a first region that provides a gaseous environment that does not degrade the pellicle 602. The radiation beam then exits the first area and enters the second area containing the optical element of the projection system PS. The second region provides a gaseous and/or plasma environment such as hydrogen plasma required by the optical element. The radiation beam then exits the projection system PS and goes onto the substrate.

7 is a flowchart of a process according to an embodiment.

In step 701, the process begins.

In step 703, the radiation beam is adjusted.

In step 705, the patterning device 601 having the pellicle 602 covering the surface of the patterning device imparts a pattern to the cross section of the radiation beam to form a patterned radiation beam.

In step 707, the projection system projects the patterned radiation beam onto a target portion of the substrate, the projection system including one or more optical elements.

In step 709, the first set of one or more outlets 603 outputs a first fluid into a first region, the first region abutting and/or including the pellicle 602.

In step 711, the second set of one or more outlets 605 outputs a second fluid into a second region comprising one or more optical elements of the projection system, the second fluid being different from the first fluid, and optionally, Patterning device 601, pellicle 602, one or more outlets of a first set, one or more outlets of a second set, and a substrate, wherein the patterned radiation beam exits the patterning device 601 and abuts a first area. And/or passing through the pellicle 602 contained in the region, and then passing through the second region, and advancing onto the substrate held by the substrate table.

In step 713, the process ends.

The embodiments include many modifications to the techniques described above.

In particular, one or more inlets of the first and/or second set need not be provided. Additionally, one or more inlets of the first set described above may instead be one or more outlets of a set of the same gas coming from one or more outlets 603 of the first set. Therefore, the arrangement of the outlets for the gas in the first region will be substantially as shown in FIG. 5. Advantageously, with such an arrangement of the outlet, the gas in the first region flows away from the pellicle 602, thereby reducing the likelihood that gas and/or plasma from the second region will reach the pellicle 602.

As an alternative to the foregoing shown in FIG. 1, a lithographic apparatus is an alternative type of patterning apparatus that imparts a pattern to the radiation beam as it passes through the patterning apparatus 601 without being reflected off the patterning apparatus 601. It can be used with the patterning device 601. The patterning device 601 will still be covered with a carbon-based pellicle 602, which is made possible by the provision of a first area as described above.

Preferably, the gas coming from one or more outlets 603 of the first set is neon, argon or nitrogen. These gases contain relatively heavier atoms/molecules, and because of their higher inertia than helium, it is easier to hold the first region when one of these gases is used.

By providing the first region having a composition different from the second region according to the embodiment, an additional advantage is provided as described above. These advantages include improved particle protection of the patterning device 601 and/or pellicle 602 due to the use of a relatively heavier gas in the first area and also reduced shear forces at the wall. Resistance to electrical breakdown can also be increased, which may be necessary due to the potentially high electrostatic field that develops around the support of the patterning device. In this case, a suitable gas for use in the first zone would be nitrogen.

Embodiments also include the use of known polysilicon pellicles with a first region comprising an inert and/or sociologically neutral gas as described above. Such a first area will reduce the generation of hydrogen sulfide in the pellicle, which hydrogen sulfide can cause deposits in the projection system PS.

Embodiments also include a lithographic apparatus in which the gas output through at least the first set of one or more outlets 603 can be varied. For example, when a carbon-based pellicle 602 is used, its output gas should be an inert and/or sociologically neutral gas as described above. However, when a polysilicon-based pellicle is used, the gas output from one or more output units of the first set may be hydrogen plasma (or there may be no gas output). Therefore, the output gas is selected according to the type of pellicle used. The time required to exchange the patterning device 601 with the pellicle or pellicle is about 20-30 seconds.

Embodiments can generally be used to provide an environment of the pellicle that protects the pellicle from all other environments within the system. In particular, the first area may not only be the local environment of the pellicle. For example, if a first area is provided for the pellicle of the patterning device in the system as shown in FIG. 2, the first area may include the entire area VE1 and within the area VE2 and/or VE3. The pellicle can be protected from gas/plasma.

8 and 9 show schematic side and top views, respectively, of a substrate table WT configured to hold a substrate W in a substrate region 223. According to a third aspect of the invention, gas supply conduits 221 for supplying the third set of one or more gas outlets 220 are provided on both sides of the substrate region 223. The third set of one or more outlets 220 are arranged such that gas is injected in a direction parallel to the surface of the substrate W, in the direction of the arrow in the drawing. The outlet 220 directs gas into the third region 224, in this embodiment the third region abuts the substrate region 223. By injecting a gas close to the substrate, the substrate is shielded from the second region 225, which shields the substrate from being degraded (damaged, etched, or contaminated) by the fluid present in the second region 225. ) To prevent.

9 shows three gas outlets 220 and associated gas supply conduits provided at equal intervals on each lateral side of the substrate region 223. Other numbers of gas outlets and/or gas supply conduits and other arrangements of gas outlets and/or gas supply conduits may also be provided which achieve the same purpose of supplying gas. Preferably the gas is supplied in a direction parallel to the surface of the substrate.

Although not shown in Figs. 8 and 9, the substrate may be covered with a film configured to cover the surface of the substrate. The third region may abut and/or include the substrate.

A schematic example of a substrate W having one surface covered with a film 502 is shown in FIG. 10. 10 shows a third set of one or more outlets 503 for outputting a third fluid into a third area; A third set of one or more inlets 504 for discharging fluid from the third area; A third fluid supply 507, such as a connector or container, in fluid communication with the third set of one or more outlets 503; A second set of one or more outlets 505 for outputting a second fluid into the second region; A second set of one or more inlets 506 for discharging fluid from the second region; And a second fluid supply 508, such as a connector or container, in fluid communication with the second set of one or more outlets 505.

10 may include many other components not shown. In particular, the optical element in the second area is not shown. There may be a physical separation sheet between the substrate W and the optical element. Although not shown in FIG. 10, there is also a substrate support for holding the substrate W and a film support for holding the film 502.

The at least one outlet 503 of the third set may be a plurality of outlets disposed along one side of the substrate W, as shown along one side of the substrate W in FIG. 9.

Gas is output from the third set of one or more outlets 503 into the localized environment of the membrane 502. The gases output from the third set of one or more outlets 503 include an inert gas and/or a chemically neutral gas that does not degrade the substrate W and/or the film 502. For example, the gas may be any one of helium, neon, argon or nitrogen. Advantageously, membrane 502 can withstand conditions within the localized environment of membrane 502.

A third set of one or more inlets 504 for degassing in the local environment of the membrane 502 is preferably provided next to the membrane 502. A third set of one or more outlets 503 is preferably provided on the opposite side of the membrane 502 for a third set of one or more inlets 504. Therefore, the third region contains the cross flow of gas across the membrane 502.

The at least one outlet of the second set outputs a plasma, such as a gas and/or hydrogen plasma, known to be used in lithographic apparatus, along with EUV radiation, into the second region.

A second set of one or more inlets 506 are provided for removing gases and/or plasmas from the projection system PS. The at least one outlet 505 of the second set is preferably provided on the opposite side of the projection system PS for the at least one inlet 506 of the second set, so that the intersection of gas and/or plasma passing through the second area There is flow.

Although not shown in FIG. 10, the second region contains the optical elements of the projection system PS, and the at least one exit and inlet of the second set is the optical of the projection system PS with the at least one exit and inlet of the third set. It is placed between the elements.

Although not shown in FIG. 10, the lithographic apparatus includes one or more of a control system and conduits, valves and pumps to control fluid flow in and out of the second and third regions.

The third and second regions are not separated by a physical barrier that prevents the fluid of the second region from flowing into the third region and reaching the film 502 or the substrate W. Therefore, the boundary between the third region and the second region is set as approximately where the concentration of the fluid exiting the second region is large enough to cause substantial damage to the substrate or film. The boundary depends on how the fluid flow is controlled by the control system and also on the environment of the pellicle and projection system.

However, one or more outlets and inlets of the third set are located next to the film 502 and/or the substrate W, and gases from the one or more outlets are passed across the film 502 and/or the substrate W. When guiding and also positioning one or more outlets and inlets of the second set further away from the film 502 or substrate W than the one or more outlets and inlets of the third set, the film 502 and/or the substrate W The localized environment of a substantially third set consists of gases coming from one or more outlets 503, so that the film 502 (or substrate W) in or in contact with the third region is substantially degraded. It doesn't work. The third region may consist of at least 80%-90% of the gas from the third set of one or more outlets 503, which means that the film 502 and/or the substrate W can be applied to the fluid from the second region. It is sufficient to prevent substantially deterioration by the.

The control system controls the flow rate of the fluid exiting from one or more third and/or second outlets and/or the flow rate of fluid exiting from the one or more third and/or second inlets to control the flow rate of the third area in the direction of the radiation beam. You can control the width.

The third region may cover the entire surface of the film 502 and/or the substrate W and preferably the entire film 502 and/or the substrate W. The third area should be thin in the direction of the radiation beam passing through the membrane 502, so there is only a short path distance of the radiation beam passing through the third area. The width of the third region in the direction of the radiation beam is determined by the amount of fluid, i.e. gas and/or plasma, from the second region that is easy to reach the film 502 and/or the substrate W. Alternatively, it must be large enough to ensure that it is not large enough to substantially damage the substrate W. However, the third area is preferably controlled by the control system such that it is not substantially wider than is necessary to achieve this so as to minimize the distance the radiation beam travels through the third area. Therefore, the deteriorating influence of the gas in the third region on the radiation beam (eg, absorption of EUV radiation) is minimized.

The amount of EUV radiation absorbed by the gas in the third region is relatively small. Due to the high permeability of the membrane 502 and the relatively small amount of absorption in the third region, an overall performance gain is obtained over known techniques.

In the lithographic apparatus according to the embodiment, the beam of EUV radiation patterned by the patterning apparatus moves from the surface of the patterning apparatus, and passes through a pellicle having a high transmittance for EUV radiation. The radiation beam then exits the membrane and enters the second area containing the optical element of the projection system PS. The second region provides a plasma environment such as a gaseous and/or hydrogen plasma required by the optical element. The radiation beam then exits the projection system PS and the second area, selectively enters the third area through the present film and goes onto the substrate.

In this specification, reference may be made in particular to embodiments of the present invention in connection with a lithographic apparatus, but embodiments of the present invention may also be used in other apparatuses. Embodiments of the present invention can form part of an apparatus for measuring or processing an object such as a mask inspection device, a measurement device, or a wafer (or other substrate) or a mask (or other patterning device 601). These devices can generally be referred to as lithographic tools. These lithographic tools can use vacuum conditions or ambient (non-vacuum) conditions.

The term “EUV radiation” is conceivable to include electromagnetic radiation having a wavelength within 4-20 nm, such as within 13-14 nm. EUV radiation can have a wavelength of less than 10 nm, for example within 4-10 nm such as 6.7 nm or 6.8 nm.

While reference may be made in particular to the use of a lithographic apparatus in the manufacture of ICs herein, it should be understood that the lithographic apparatus described herein may have other applications. Other possible applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like.

When the terms "first", "second" and "third" are used in the present application, this is for distinguishing one from the other and does not refer to numbers. For example, when speaking of “a second area” and a “third area”, it does not mean that there is also a “first area”.

Embodiments of the first, second, third and fourth aspects of the present invention may be said according to one or more of the following terms.

1) As a lithographic apparatus,

An illumination system configured to adjust the radiation beam;

A patterning device 601 configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam;

A pellicle 602 configured to cover the surface of the patterning device 601;

A substrate table configured to hold a substrate;

A projection system configured to project the patterned radiation beam onto a target portion of the substrate when the substrate is held by a substrate table, the projection system including one or more optical elements;

One or more outlets 603 of a first set for outputting a first fluid into a first region abutting the pellicle 602 and/or containing the pellicle; And

A second set of one or more outlets (605) configured to output a second fluid into a second region comprising one or more optical elements of the projection system,

The second fluid is different from the first fluid.

2) The method of claim 1, wherein the patterning device (601), pellicle (602), one or more outlets (603) of the first set, one or more outlets (605) of the second set and the substrate table are patterned when in use. A radiation beam from the patterning device 601 exits the first region and passes through the pellicle 602 contained in the first region, and then passes through the second region, the substrate A lithographic apparatus arranged to advance onto a substrate held by a table.

3) The previous clause, wherein the at least one outlet (603) of the first set is configured to provide a first gaseous environment to the first area, wherein the first gaseous environment disengages the pellicle (602) from the second area. Shielding, lithographic apparatus.

4) A lithographic apparatus according to the previous clause, wherein the first fluid is a gas that is inert and/or chemically neutral to the pellicle (602).

5) The lithographic apparatus according to the previous clause, wherein the first fluid comprises one or more of helium, neon, argon or nitrogen.

6) The lithographic apparatus according to the previous clause, wherein the second fluid comprises a gas and/or plasma that degrades the pellicle.

7) The lithographic apparatus according to the previous clause, wherein the second fluid comprises a plasma, such as a gas and/or hydrogen plasma, to prevent oxidation and contamination of one or more optical elements of the projection system.

8) The lithographic apparatus according to item 7, wherein the second fluid comprises hydrogen radicals.

9) The lithographic apparatus according to the previous paragraph, wherein the lithographic apparatus further comprises a patterning apparatus support arranged to support the patterning apparatus (601), the pellicle (602) being coupled to the patterning apparatus support.

10) A lithographic apparatus according to the preceding claim, wherein at least one of the at least one outlet (605) of the second set is disposed between the at least one outlet (603) of the first set and at least one optical element of the projection system.

11) The lithographic apparatus according to the previous clause, further comprising a first set of one or more inlets (604) disposed in the first area for removing fluid from the first area.

12) The pellicle (602) according to clause 11, wherein the at least one inlet (604) of the first set is arranged on the opposite side of the pellicle (602) relative to the at least one outlet (603) of the first set, so that in use the pellicle (602) The lithographic apparatus, wherein there is a cross flow of the first fluid across the.

13) The lithographic apparatus according to the previous paragraph, wherein the lithographic apparatus further comprises a second set of at least one inlet (606) disposed in the second region for removing fluid from the second region.

14) The method of claim 13, wherein the at least one inlet (606) of the second set is disposed on the opposite side of the projection system relative to the at least one outlet (605) of the second set, so that when in use the A lithographic apparatus in which there is a cross flow of squeeze second fluid.

15) The lithographic apparatus according to the previous clause, wherein the pellicle (602) is carbon-based.

16) The lithographic apparatus according to item 15, wherein the first fluid comprises a carbon containing gas.

17) The lithographic apparatus according to clause 15 or 16, wherein the pellicle (602) comprises at least one of carbon nanotubes and diamonds.

18) The lithographic apparatus according to the previous clause, wherein the illumination system is configured to adjust an extreme ultraviolet (EUV) radiation beam.

19) The lithographic apparatus according to the previous clause, wherein at least one of the at least one optical element is a mirror.

20) A lithographic apparatus according to the previous clause, further comprising a control system configured to select a first fluid output from one or more outlets (603) of the first set, depending on the type of the pellicle to be used.

21) The previous paragraph, further comprising a first fluid supply comprising a first fluid and a second fluid supply comprising a second fluid, wherein the first fluid supply (607) comprises at least one outlet (603) of the first set. ), and the second fluid supply (608) is in fluid communication with one or more outlets (605) of the second set.

22) As a method,

Adjusting the radiation beam (703);

Step 705 of forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam with a patterning device 601 whose surface is covered with a pellicle 602;

A projection system comprising one or more optical elements, the step of projecting (707) the patterned radiation beam onto a target portion of a substrate;

Outputting (709) a first fluid to a first set of one or more outlets (603) into a first region abutting and/or containing the pellicle (602); And

Outputting (711) a second fluid into a second region comprising one or more optical elements of the projection system to a second set of one or more outlets (605),

The second fluid is different from the first fluid.

23) The patterning device (601) of clause 22, wherein the patterning device (601), the pellicle (602), one or more outlets of the first set, one or more outlets of the second set and the substrate are patterned radiation beams. From, contacting the first region and/or passing through the pellicle 602 contained in the first region, and then passing through the second region and advancing onto the substrate held by the substrate table. The way.

24) The method according to claim 22 or 23, carried out with a lithographic apparatus according to any one of claims 1 to 21.

25) The method of any one of items 22 to 24, further comprising the step of selecting a first fluid output by one or more outlets (603) of the first set, depending on the type of the pellicle used. How to.

26) According to any one of items 22 to 25, wherein when the first fluid is output into the first area, the first gaseous environment shielding the pellicle (602) from the second area is the first Formed in the area, the method.

27) The first gaseous environment according to any one of items 22 to 25, wherein outputting the first fluid into the first area prevents the fluid in the second area from reaching the pellicle (602). Formed in the first region.

28) The method according to any one of items 22 to 27, wherein the first fluid is a gas that is inert to the pellicle (602) and/or is chemically neutral.

29) The method of any of paragraphs 22-28, wherein the first fluid comprises one or more of helium, neon, argon or nitrogen.

30) The method of any of paragraphs 22-29, wherein the second fluid comprises a gas and/or plasma that degrades the pellicle.

31) The method according to any one of items 22-30, wherein the second fluid comprises a plasma such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system.

32) The method of clause 31, wherein the second fluid comprises hydrogen radicals.

33) The method of any of paragraphs 22-32, wherein the pellicle (602) is carbon-based and the first fluid comprises a carbon-containing gas.

34) A lithographic apparatus,

An illumination system configured to adjust the radiation beam;

A patterning device configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam;

A substrate table WT configured to hold a substrate W in the substrate region 223;

A projection system configured to project the patterned radiation beam onto a target portion of the substrate W when the substrate W is held by the substrate table WT and comprising one or more optical elements;

A second set of one or more outlets (505) configured to output a second fluid into a second area (225) containing one or more optical elements of the projection system; And

A third set of one or more outlets 220, 503 for outputting a third fluid into a third region 224 abutting the substrate region 223 and/or comprising the substrate region,

The second fluid is different from the third fluid.

35) The method of clause 34, wherein a third set of one or more outlets (220, 503) is configured to provide a third gaseous environment to the third region (224), wherein the third gaseous environment comprises the substrate (W). A lithographic apparatus shielding from the second area (225).

36) The method according to item 34 or 35, wherein the substrate region (223) comprises a film (502) configured to cover the surface of the substrate (W), the third region (224) abuts the film (502) and / Or comprising the membrane.

37) The method of clause 36, wherein the third set of one or more outlets (220, 503) is configured to provide a third gaseous environment to the third region (224), the third gaseous environment forming the membrane (W) as a second. A lithographic apparatus shielding from region 225.

38) A patterning device (601), a projection system, a second set of one or more outlets (503), a third set of one or more outlets (220, 503) and a substrate according to any one of items 34 to 37. The table WT, when in use, allows the patterned radiation beam to exit the patterning device, pass through the projection system comprising the second region 225, and through the third region 224, the substrate table WT. A lithographic apparatus, which is arranged to go onto the substrate W held by the.

39) The lithographic apparatus according to any one of items 34 to 38, wherein the third fluid is a gas that is inert and/or chemically neutral to the substrate (W).

40) The lithographic apparatus according to any one of items 34 to 39, wherein the third fluid comprises one or more of helium, neon, argon or nitrogen.

41) The lithographic apparatus according to any one of items 34 to 40, wherein the second fluid comprises a gas and/or plasma that degrades the substrate (W).

42) A lithographic apparatus according to any one of items 34 to 41, wherein the second fluid comprises a plasma such as a gas and/or hydrogen plasma for preventing oxidation and contamination of one or more optical elements of the projection system. .

43) The lithographic apparatus according to item 42, wherein the second fluid comprises hydrogen radicals.

44) A third set of one or more inlets (504) according to any one of items 34 to 43, further comprising a third set of one or more inlets (504) disposed in the third area (224) for removing fluid from the third area (224). Lithographic apparatus.

45) A third set of at least one inlet (504) is arranged on the opposite side of the substrate (W) with respect to the third set of at least one outlet (220, 503), so that the substrate (W) in use The lithographic apparatus in which there is a cross flow of the third fluid across the.

46) A second set of at least one inlet (506) according to any of the preceding clauses, further comprising a second set of one or more inlets (506) disposed in the second region (225) for removing fluid from the second region (225). Lithographic apparatus.

47) The second fluid of clause 46, wherein the at least one inlet (506) of the second set is disposed on the opposite side of the projection system with respect to the at least one outlet (505) of the second set, so that the second fluid crosses the projection system in use. A lithographic apparatus in which there is a cross flow of.

48) The lithographic apparatus according to any of paragraphs 34 to 47, wherein the illumination system is configured to adjust an extreme ultraviolet (EUV) radiation beam.

49) The lithographic apparatus according to any one of items 34 to 48, wherein at least one of the at least one optical element is a mirror.

50) According to any one of items 34 to 49, configured to select a third fluid output from one or more outlets (220, 503) of the third set, depending on the type of substrate or film used. A lithographic apparatus further comprising a control system with a control system.

51) According to the previous item, further comprising a second fluid supply (508) containing a second fluid and a third fluid supply (507) containing a third fluid, the second fluid supply (508) is a second set And the third fluid supply 508 is in fluid communication with one or more outlets 503 of the third set.

52) As a method,

Adjusting the radiation beam;

A patterning apparatus comprising: forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam;

A projection system comprising one or more optical elements, the method comprising: projecting the patterned radiation beam onto a target portion of a substrate held in a substrate area;

Outputting, to one or more outlets of the second set, a second fluid into a second region comprising one or more optical elements of the projection system; And

Outputting, to one or more outlets of the third set, a third fluid into a third region abutting and/or comprising the substrate region,

The second fluid is different from the third fluid.

53) The method of clause 52, wherein a third fluid output into the third region provides a third gaseous environment to the third region, and the third gaseous environment shields the substrate from the second region.

54) The method of clause 52 or 53, wherein the substrate region comprises a film configured to cover a surface of the substrate, and the third region abuts and/or comprises the film.

55) The method of clause 54, wherein the third fluid output into the third region provides a third gaseous environment to the third region, and the third gaseous environment shields the membrane from the second region.

56) The patterning device, the pellicle, the second set of one or more outlets, the third set of one or more outlets and the substrate according to any one of items 52 to 55, wherein the patterned radiation beam is from the patterning device. The method being arranged to exit, pass through the second region, and pass through the third region to advance onto a substrate held by a substrate table.

57) The method according to any one of claims 52 to 56, carried out with the lithographic apparatus according to any one of claims 34 to 51.

58) The method of any of paragraphs 52-57, further comprising selecting a third fluid output by the third set of one or more outlets, depending on the type of substrate or film used.

59) The method of any of paragraphs 52-58, wherein the third fluid is a gas that is inert to the substrate and/or is chemically neutral.

60) The method of any of paragraphs 52-59, wherein the third fluid comprises one or more of helium, neon, argon or nitrogen.

61) The method of any of paragraphs 52-60, wherein the second fluid comprises a gas and/or plasma that degrades the substrate.

62) The method of any of paragraphs 52-61, wherein the second fluid comprises a plasma, such as a gas and/or hydrogen plasma for preventing oxidation and contamination of one or more optical elements of the projection system.

63) The method of 62, wherein the second fluid comprises hydrogen radicals.

Although specific embodiments of the present invention have been described above, it will be appreciated that the present invention may be implemented differently from the foregoing. The above explanation is illustrative and not limiting. Accordingly, it will be apparent to those skilled in the art that modifications may be made to the invention described above without departing from the scope of the claims given below.

Claims (63)

As a lithographic apparatus,
An illumination system configured to adjust the radiation beam;
A patterning device 601 configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam;
A pellicle 602 configured to cover the surface of the patterning device 601;
A substrate table configured to hold a substrate;
A projection system configured to project the patterned radiation beam onto a target portion of the substrate when the substrate is held by a substrate table, the projection system including one or more optical elements;
One or more outlets 603 of a first set for outputting a first fluid into a first region abutting the pellicle 602 and/or containing the pellicle; And
A second set of one or more outlets (605) configured to output a second fluid into a second region comprising one or more optical elements of the projection system,
The second fluid is different from the first fluid. The method of claim 1,
The patterning device 601, the pellicle 602, the first set of one or more outlets 603, the second set of one or more outlets 605 and the substrate table, when in use, the patterned radiation beam is the patterning device ( Exiting from 601, passing through the pellicle 602, which is in contact with the first region and/or contained in the first region, and then passes through the second region, onto a substrate held by the substrate table. A lithographic apparatus arranged to advance. The method according to claim 1 or 2,
The first set of one or more outlets (603) is configured to provide a first gaseous environment to the first region, the first gaseous environment shielding the pellicle (602) from the second region. The method according to any one of claims 1 to 3,
The lithographic apparatus, wherein the first fluid is a gas that is inert and/or chemically neutral to the pellicle (602). The method according to any one of claims 1 to 4,
The lithographic apparatus, wherein the first fluid comprises one or more of helium, neon, argon, or nitrogen. The method according to any one of claims 1 to 5,
The lithographic apparatus, wherein the second fluid comprises a gas and/or plasma that degrades the pellicle. The method according to any one of claims 1 to 6,
The second fluid comprises a plasma, such as a gas and/or hydrogen plasma, to prevent oxidation and contamination of one or more optical elements of the projection system. The method of claim 7,
The second fluid comprises hydrogen radicals The method according to any one of claims 1 to 8,
The lithographic apparatus further comprises a patterning apparatus support arranged to support the patterning apparatus (601), wherein the pellicle (602) is coupled to the patterning apparatus support. The method according to any one of claims 1 to 9,
At least one of the one or more outlets (605) of the second set is disposed between the one or more outlets (603) of the first set and one or more optical elements of a projection system. The method according to any one of claims 1 to 10,
A lithographic apparatus further comprising a first set of one or more inlets (604) disposed in the first area for removing fluid from the first area. The method of claim 11,
The one or more inlets 604 of the first set are disposed on the opposite side of the pellicle 602 with respect to the one or more outlets 603 of the first set, so that when in use, the first fluid crosses the pellicle 602 A lithographic apparatus in which there is a cross flow. The method according to any one of claims 1 to 12,
The lithographic apparatus further comprising a second set of one or more inlets (606) disposed in the second region for removing fluid from the second region. The method of claim 13,
The at least one inlet 606 of the second set is disposed on the opposite side of the projection system relative to the at least one outlet 605 of the second set, so that the cross flow of the second fluid across the projection system in use is To be, a lithographic apparatus. The method according to any one of claims 1 to 14,
The pellicle 602 is carbon-based. The method of claim 15,
The lithographic apparatus, wherein the first fluid comprises a carbon containing gas. The method of claim 15 or 16,
The pellicle (602) comprises at least one of carbon nanotubes and diamonds. The method according to any one of claims 1 to 17,
The lithographic apparatus, wherein the illumination system is configured to regulate an extreme ultraviolet (EUV) radiation beam. The method according to any one of claims 1 to 18,
A lithographic apparatus, wherein at least one of the at least one optical element is a mirror. The method according to any one of claims 1 to 19,
A lithographic apparatus further comprising a control system configured to select a first fluid output from one or more outlets 603 of the first set, depending on the type of the pellicle used. The method according to any one of claims 1 to 20,
Further comprising a first fluid supply containing the first fluid and a second fluid supply containing a second fluid, the first fluid supply 607 is in fluid communication with one or more outlets 603 of the first set and , The second fluid supply 608 is in fluid communication with one or more outlets 605 of the second set. Adjusting the radiation beam (703);
Step 705 of forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam with a patterning device 601 whose surface is covered with a pellicle 602;
A projection system comprising one or more optical elements, the step of projecting (707) the patterned radiation beam onto a target portion of a substrate;
Outputting (709) a first fluid to a first set of one or more outlets (603), abutting the pellicle (602) and/or into a first region comprising the pellicle (602); And
Outputting (711) a second fluid into a second region comprising one or more optical elements of the projection system to a second set of one or more outlets (605),
The second fluid is different from the first fluid. The method of claim 22,
The patterning device 601, pellicle 602, one or more outlets of a first set, one or more outlets of a second set, and a substrate, a patterned radiation beam coming out of the patterning device 601 and in a first area. A method arranged to abut and/or pass through the pellicle (602) contained in a first region, and then through the second region, onto a substrate held by the substrate table. The method of claim 22 or 23,
22. A method performed with a lithographic apparatus according to any of the preceding claims. The method according to any one of claims 22 to 24,
The method further comprising the step of selecting a first fluid output by one or more outlets (603) of the first set, depending on the type of the pellicle used. The method according to any one of claims 22 to 25,
When outputting the first fluid into the first region, a first gaseous environment is formed in the first region that shields the pellicle (602) from the second region. The method according to any one of claims 22 to 25,
When outputting the first fluid into the first area, a first gaseous environment is created in the first area that prevents fluid in the second area from reaching the pellicle (602). The method according to any one of claims 22 to 27,
Wherein the first fluid is a gas that is inert and/or chemically neutral to the pellicle (602). The method according to any one of claims 22 to 28,
Wherein the first fluid comprises at least one of helium, neon, argon, or nitrogen. The method according to any one of claims 22 to 29,
Wherein the second fluid comprises a gas and/or plasma that degrades the pellicle. The method according to any one of claims 22 to 30,
Wherein the second fluid comprises a plasma, such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system. The method of claim 31,
Wherein the second fluid comprises hydrogen radicals. The method according to any one of claims 22 to 32,
Wherein the pellicle (602) is carbon-based and the first fluid comprises a carbon-containing gas. As a lithographic apparatus,
An illumination system configured to adjust the radiation beam;
A patterning device configured to form a patterned radiation beam by imparting a pattern to the cross section of the radiation beam;
A substrate table WT configured to hold a substrate W in the substrate region 223;
A projection system configured to project the patterned radiation beam onto a target portion of the substrate W when the substrate W is held by the substrate table WT and comprising one or more optical elements;
A second set of one or more outlets (505) configured to output a second fluid into a second area (225) containing one or more optical elements of the projection system; And
A third set of one or more outlets 220, 503 for outputting a third fluid into a third region 224 abutting the substrate region 223 and/or comprising the substrate region 223,
The second fluid is different from the third fluid. The method of claim 34,
The third set of one or more outlets (220, 503) is configured to provide a third gaseous environment to the third area (224), and the third gaseous environment connects the substrate (W) to the second area (225). Shielding from, a lithographic apparatus. The method of claim 34,
The substrate region 223 comprises a film 502 configured to cover the surface of the substrate W, and the third region 224 abuts the film 502 and/or comprises a film 502. . The method of claim 36,
The third set of one or more outlets 220, 503 are configured to provide a third gaseous environment to the third region 224, the third gaseous environment shielding the membrane W from the second region 225. , Lithographic apparatus. The method according to any one of claims 34 to 37,
The patterning device 601, the projection system, the second set of one or more outlets 503, the third set of one or more outlets 220, 503 and the substrate table WT, when in use, the patterned radiation beam is patterned. Is arranged to exit the device, pass through a projection system comprising a second region 225, and through a third region 224, onto a substrate W held by a substrate table WT. , Lithographic apparatus. The method according to any one of claims 34 to 38,
The third fluid is a gas that is inert and/or chemically neutral with respect to the substrate (W). The method according to any one of claims 34 to 39,
The lithographic apparatus, wherein the third fluid comprises one or more of helium, neon, argon, or nitrogen. The method according to any one of claims 34 to 40,
The lithographic apparatus, wherein the second fluid comprises a gas and/or plasma that degrades the substrate (W). The method according to any one of claims 34 to 41,
The second fluid comprises a plasma such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system. The method of claim 42,
The lithographic apparatus, wherein the second fluid comprises hydrogen radicals. The method according to any one of claims 34 to 43,
The lithographic apparatus further comprising a third set of one or more inlets (504) disposed in the third area (224) for removing fluid from the third area (224). The method of claim 44,
The at least one inlet 504 of the third set is disposed on the opposite side of the substrate W with respect to the at least one outlet 220, 503 of the third set, so that the A lithographic apparatus in which there is a cross flow. The method according to any one of claims 34 to 45,
A lithographic apparatus further comprising a second set of one or more inlets (506) disposed in the second region (225) for removing fluid from the second region (225). The method of claim 46,
The at least one inlet 506 of the second set is disposed on the opposite side of the projection system relative to the at least one outlet 505 of the second set, so that there is a cross flow of the second fluid across the projection system in use, Lithographic apparatus. The method according to any one of claims 34 to 47,
The lithographic apparatus, wherein the illumination system is configured to regulate an extreme ultraviolet (EUV) radiation beam. The method according to any one of claims 34 to 48,
At least one of the at least one optical element is a mirror. The method according to any one of claims 34 to 49,
A lithographic apparatus further comprising a control system configured to select a third fluid output from the third set of one or more outlets (220, 503), depending on the type of substrate or film to be used. The method according to any one of claims 1 to 50,
And a third fluid supply 507 containing the second fluid supply 508 and a third fluid, the second fluid supply 508 being in fluid communication with one or more outlets 505 of the second set, , The third fluid supply (508) is in fluid communication with the third set of one or more outlets (503). Adjusting the radiation beam;
A patterning apparatus comprising: forming a patterned radiation beam by applying a pattern to a cross section of the radiation beam;
A projection system comprising one or more optical elements, the method comprising: projecting the patterned radiation beam onto a target portion of a substrate held in a substrate area;
Outputting, to one or more outlets of the second set, a second fluid into a second region comprising one or more optical elements of the projection system; And
Outputting a third fluid to a third set of one or more outlets into a third region abutting the substrate region and/or into a third region comprising the substrate region,
The second fluid is different from the third fluid. The method of claim 52,
The third fluid output into the third region provides a third gaseous environment to the third region, and the third gaseous environment shields the substrate from the second region. The method of claim 52,
Wherein the substrate region includes a film configured to cover a surface of the substrate, and a third region abuts and/or comprises a film. The method of claim 54,
Wherein the third fluid output into the third region provides a third gaseous environment to the third region, the third gaseous environment shields the membrane from the second region. The method according to any one of claims 52 to 55,
The patterning device, pellicle, one or more outlets of a second set, one or more outlets of a third set, and a substrate, wherein a patterned radiation beam exits the patterning device, passes through the second region, and passes through a third region. Passing through and being arranged to advance onto a substrate held by a substrate table. The method according to any one of claims 52 to 56,
52. A method performed with a lithographic apparatus according to any of claims 34 to 51. The method according to any one of claims 52 to 57,
The method further comprising selecting, depending on the type of substrate or film used, a third fluid output by the third set of one or more outlets. The method according to any one of claims 52 to 58,
Wherein the third fluid is a gas that is inert to the substrate and/or is chemically neutral. The method according to any one of claims 52 to 59,
Wherein the third fluid comprises one or more of helium, neon, argon or nitrogen. The method according to any one of claims 52 to 60,
Wherein the second fluid comprises a plasma and/or gas that degrades the substrate. The method according to any one of claims 52 to 61,
Wherein the second fluid comprises a plasma, such as a gas and/or hydrogen plasma to prevent oxidation and contamination of one or more optical elements of the projection system. The method of claim 62,
Wherein the second fluid comprises hydrogen radicals.

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