KR20210011628A - Composition for cleaning substrate, method for producing there of and method for cleaing substrate using there of - Google Patents

Abstract

The present invention relates to a substrate cleaning composition, a method for preparing the substrate cleaning composition, and a substrate cleaning method using the same. According to an embodiment, the substrate cleaning composition includes: a solvent; cellulose; and an amphoteric substance.

Description

A substrate cleaning composition, a method for producing a substrate cleaning composition, and a method for cleaning a substrate using the same TECHNICAL FIELD [COMPOSITION FOR CLEANING SUBSTRATE, METHOD FOR PRODUCING THERE OF AND METHOD FOR CLEAING SUBSTRATE USING THERE OF}

The present invention relates to a substrate cleaning composition, a method of manufacturing a substrate cleaning composition, and a substrate cleaning method using the same.

In order to manufacture a semiconductor device or a liquid crystal display, various processes such as photolithography, ashing, ion implantation, thin film deposition, and cleaning are performed on a substrate. Among them, the cleaning process is a process of removing particles remaining on the substrate, and is performed in steps before and after each process.

In general, the cleaning process is a process of removing foreign substances remaining on a substrate, and a strong acid or strong base, or a ferroorganic chemical substance is used. These chemicals are harmful to the environment and the body, and the cost of treating waste chemicals is high.

An object of the present invention is to provide a substrate cleaning composition, a method for manufacturing a substrate cleaning composition, and a method for cleaning a substrate that are harmless to the environment and the body.

An object of the present invention is to provide a substrate cleaning composition, a method of manufacturing a substrate cleaning composition, and a method of cleaning a substrate that do not cause loss of material during semiconductor cleaning of a Ge material.

The object of the present invention is not limited thereto, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides a cleaning composition for cleaning a substrate. According to an embodiment, the substrate cleaning composition comprises a solvent; With cellulose; Contains amphoteric substances.

In one embodiment, the amphoteric material may form a micelle structure on the surface of the cellulose.

In one embodiment, the amphoteric material may be a surfactant having a tail.

In one embodiment, the tail may be hydrophobic.

In one embodiment, the surface of the cellulose may be hydrophilic.

In one embodiment, the amphoteric material may be cocamidopropyl betaine (CAPB).

In one embodiment, the solvent is 85wt% or more to less than 99wt%; The cellulose is 1wt% or more and less than 10wt%; The amphoteric material may contain more than 0 wt% and less than 5 wt%.

In one embodiment, the surface of the cellulose may have a hydroxyl group.

In an embodiment, the cellulose may have a length of 0.5 nm or more and 500 nm or less.

In an embodiment, the cellulose may have a length of 50 to 200 nm.

In one embodiment, the cellulose may have a thickness of 0.5m or more and 100nm or less.

In one embodiment, the solvent may be pure water.

In one embodiment, the cellulose may be nanocellulose.

The present invention provides a method for producing a cleaning composition for cleaning a substrate. According to an embodiment, a method of preparing a substrate cleaning composition includes preparing a mixed solution by mixing a solvent and cellulose; And mixing the amphoteric material with the mixed solution.

In an embodiment, the mixture may be 85 wt% or more and 99 wt% or less of the solvent, and the cellulose may be 1 wt% or more and 15 wt% or less.

In one embodiment, the substrate cleaning composition may be mixed at room temperature or pressure.

The present invention provides a method for producing a cleaning composition for cleaning a substrate. According to an embodiment, a method of preparing a substrate cleaning composition may include mixing an aqueous solution of cellulose and an amphoteric material.

In one embodiment, the cellulose aqueous solution may be a 1wt% to 15wt% aqueous solution of cellulose.

In one embodiment, the substrate cleaning composition may be mixed at room temperature or pressure.

The present invention provides a substrate cleaning method using a cleaning composition for cleaning a substrate. According to an embodiment, a substrate cleaning method using a substrate cleaning composition includes: preparing a substrate to be cleaned; It includes the step of cleaning the substrate by supplying the substrate cleaning composition of any one of claims 1 to 11.

In an embodiment, the washing may be 10 seconds or longer.

In one embodiment, the washing may be 20 seconds or longer.

In an embodiment, the washing may be performed at room temperature or pressure.

The substrate cleaning composition, the substrate cleaning composition manufacturing method, and the substrate cleaning method according to an embodiment of the present invention are harmless to the environment and the body.

The substrate cleaning composition, the substrate cleaning composition manufacturing method, and the substrate cleaning method according to an embodiment of the present invention do not cause loss of material when cleaning a semiconductor of a Ge material.

The effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art from the present specification and the accompanying drawings.

1 is a plan view showing a substrate processing facility according to an embodiment of the present invention.
2 is a cross-sectional view showing the substrate processing apparatus of FIG. 1.
3 is a diagram illustrating cellulose according to an embodiment of the present invention.
4 is a diagram showing an amphoteric material according to an embodiment.
5 is a diagram illustrating a process of mixing nanocellulose and an amphoteric material according to an exemplary embodiment.
6 is a diagram illustrating a predicted view when nanocellulose and an amphoteric material are combined according to an exemplary embodiment.
7 is a flow chart showing a method of manufacturing a cleaning composition according to the first embodiment.
8 is a flow chart showing a method of manufacturing a cleaning composition according to the second embodiment.
9 is a graph showing cleaning power according to Comparative Examples and Examples.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Therefore, the shape of the constituent elements in the drawings is exaggerated to emphasize a more clear description.

In this embodiment, a process of cleaning a substrate, a substrate support unit supporting the substrate, and a processing container surrounding the substrate will be described as an example. Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a plan view showing a substrate processing facility according to an embodiment of the present invention. Referring to FIG. 1, a substrate processing facility 1 includes an index module 10 and a process processing module 20. The index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process processing module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 120, the transfer frame 140, and the process processing module 20 are arranged is referred to as the first direction 12, and when viewed from above, perpendicular to the first direction 12 The direction is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

The carrier 18 in which the substrate W is accommodated is mounted on the load port 120. A plurality of load ports 120 are provided and they are arranged in a line along the second direction 14. The number of load ports 120 may increase or decrease according to process efficiency and footprint conditions of the process processing module 20. A plurality of slots (not shown) are formed in the carrier 18 to accommodate the substrates W in a state horizontally disposed with respect to the ground. As the carrier 18, a Front Opening Unifed Pod (FOUP) may be used.

The process processing module 20 has a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 is disposed in a longitudinal direction parallel to the first direction 12. Process chambers 260 are respectively disposed on both sides of the transfer chamber 240. The process chambers 260 are located on both sides of the transfer chamber 240 so as to be symmetrical to each other with respect to the transfer chamber 240. Some of the process chambers 260 are disposed along the length direction of the transfer chamber 240. In addition, some of the process chambers 260 are disposed to be stacked on each other. That is, the process chambers 260 may be arranged in an A X B arrangement on one side of the transfer chamber 240. Here, A is the number of process chambers 260 provided in a row along the first direction 12, and B is the number of process chambers 260 provided in a row along the third direction 16. When four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 may be arranged in an arrangement of 2 X 2 or 3 X 2. The number of process chambers 260 may increase or decrease.

Optionally, the process chamber 260 may be provided only on one side of the transfer chamber 240. In addition, the process chamber 260 may be provided in a single layer on one or both sides of the transfer chamber 240.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space in which the substrate W stays between the transfer chamber 240 and the transfer frame 140 before the substrate W is transferred. A slot (not shown) in which the substrate W is placed is provided inside the buffer unit 220. A plurality of slots (not shown) are provided to be spaced apart from each other along the third direction 16. The buffer unit 220 has a surface facing the transfer frame 140 and a surface facing the transfer chamber 240 open.

The transfer frame 140 transfers the substrate W between the carrier 18 seated on the load port 120 and the buffer unit 220. The transport frame 140 is provided with an index rail 142 and an index robot 144.

The index rail 142 is provided in its longitudinal direction parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and moves linearly in the second direction 14 along the index rail 142.

The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. In addition, the body (144b) is provided to be rotatable on the base (144a). The index arm 144c is coupled to the body 144b, and is provided to move forward and backward with respect to the body 144b. A plurality of index arms 144c may be provided to be individually driven. The plurality of index arms 144c are disposed to be stacked apart from each other along the third direction 16. Some of the plurality of index arms 144c are used when transporting the substrate W from the process processing module 20 to the carrier 18, and other parts of the index arms 144c are used to transfer the substrate W from the carrier 18 to the process processing module 20. Can be used when returning W). This may prevent particles generated from the substrate W before the process treatment from adhering to the substrate W after the process treatment during the process of the index robot 144 carrying in and carrying out the substrate W.

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260. A guide rail 242 and a main robot 244 are provided in the transfer chamber 240. The guide rail 242 is disposed so that its longitudinal direction is parallel to the first direction 12.

* The main robot 244 is installed on the guide rail 242 and is linearly moved along the first direction 12 on the guide rail 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. In addition, the body 244b is provided to be rotatable on the base 244a. The main arm 244c is coupled to the body 244b, which is provided to be movable forward and backward with respect to the body 244b. A plurality of main arms 244c are provided to be individually driven. The main arms 244c are disposed to be stacked apart from each other along the third direction 16.

A substrate processing apparatus 300 for performing a cleaning process on the substrate W is provided in the process chamber 260. The substrate processing apparatus 300 may have a different structure depending on the type of cleaning process to be performed. Unlike this, the substrate processing apparatus 300 in each process chamber 260 may have the same structure. Optionally, the process chamber 260 is divided into a plurality of groups, and the substrate processing apparatuses 300 in the process chambers 260 belonging to the same group are the same, and the substrate processing apparatuses in the process chambers 260 belonging to different groups. The structure of 300 may be provided differently from each other.

The substrate processing apparatus 300 performs a process of cleaning a substrate.

2 is a cross-sectional view showing the substrate processing apparatus of FIG. 1. Referring to FIG. 2, the substrate processing apparatus 300 includes a processing container 320, a substrate support unit 340, an elevating unit 360, a liquid supply unit 380, and a controller (not shown).

The processing container 320 has a cylindrical shape with an open top. The processing container 320 has an internal recovery container 322, an intermediate recovery container 324, and an external recovery container 326. Each of the internal recovery container 322, the intermediate recovery container 324, and the external recovery container 326 recovers treatment liquids different from each other among treatment liquids used in the process.

The internal recovery container 322 is provided in an annular ring shape surrounding the substrate support unit 340, the intermediate recovery container 324 is provided in an annular ring shape surrounding the internal recovery container 322, and an external recovery container ( 326 is provided in the shape of an annular ring surrounding the inner recovery container 326.

An inner exhaust hole 326c is formed on the bottom surface of the external recovery container 326. The inner space 322a of the inner recovery cylinder 322 functions as an inner inlet 322a through which the treatment liquid flows. The space 324a between the intermediate recovery container 324 and the internal recovery container 322 functions as an intermediate inlet 324a through which the treatment liquid flows into the intermediate recovery container 324. The space 326a between the intermediate recovery container 324 and the external recovery container 326 functions as an outer inlet 326a through which the treatment liquid flows into the external recovery container 326. According to an example, each of the inner inlet 322a, the middle inlet 324a, and the outer inlet 326a may be located at different heights. A first recovery line 322b, a second recovery line 324b, and a third recovery line 326b are respectively connected under the bottom of each of the side inlet 322a, the middle inlet 324a, and the outer inlet 326a. The treatment liquids introduced into each of the internal recovery bin 322, the intermediate recovery bin 324, and the external recovery bin 326 are the first recovery line 322b, the second recovery line 324b, and the third recovery line. Through each of the 326b is provided to an external treatment liquid regeneration system (not shown) can be reused.

The substrate support unit 340 is provided as a substrate support unit 340 that supports and rotates the substrate W during a process. The substrate support unit 340 has a support plate 342, a support pin 344, a chuck pin 346, and rotation drive members 348 and 349. The support plate 342 has an upper surface that is provided in a generally circular shape when viewed from the top. The rotation drive members 348 and 349 rotate the support plate. The rotation driving members 348 and 349 have a support shaft 342 and a driving part 349. The support shaft 342 is fixedly coupled to the bottom surface of the support plate 342. The support shaft 342 is rotatable by the driving unit 349.

A plurality of support pins 344 are provided. The support pins 344 are disposed to be spaced apart at predetermined intervals at the edge of the upper surface of the support plate 342 and protrude upward from the support plate 342. The support pins 344 are arranged to have an annular ring shape as a whole by combination with each other. The support pin 344 supports the rear edge of the substrate W such that the substrate W is spaced apart from the upper surface of the support plate 342 by a predetermined distance.

A plurality of chuck pins 346 are provided. The chuck pin 346 is disposed farther away from the support pin 344 from the center of the support plate 342. The chuck pin 346 is provided to protrude upward from the support plate 342. The chuck pin 346 supports the side portion of the substrate W so that the substrate W does not deviate laterally from the original position when the substrate support unit 340 is rotated. The chuck pin 346 is provided to enable linear movement between the standby position and the support position along the radial direction of the support plate 342. The standby position is a position farther from the center of the support plate 342 compared to the support position. When the substrate W is loaded or unloaded on the substrate support unit 340, the chuck pin 346 is positioned at a standby position, and when a process is performed on the substrate W, the chuck pin 346 is positioned at the support position. In the supporting position, the chuck pin 346 is in contact with the side of the substrate W.

The lifting unit 360 adjusts the relative height between the substrate support unit 340 and the processing container 320. According to an example, the lifting unit 360 may linearly move the processing container 320 in the vertical direction. As the processing container 320 is moved up and down, the relative height of the processing container 320 with respect to the substrate supporting unit 340 is changed. The lifting unit 360 has a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixedly installed on the outer wall of the processing container 320, and a moving shaft 364, which is moved in the vertical direction by the actuator 366, is fixedly coupled to the bracket 362. When the substrate W is placed on the substrate support unit 340 or is lifted from the substrate support unit 340, the processing vessel 320 is lowered so that the substrate support unit 340 protrudes to the top of the processing vessel 320. do. In addition, when the process proceeds, the height of the processing container 320 is adjusted so that the processing liquid can be introduced into the predetermined collection container 360 according to the type of the processing liquid supplied to the substrate W. Optionally, the lifting unit 360 may move the substrate support unit 340 in the vertical direction.

The liquid supply unit 370 supplies various types of liquids onto the substrate W. One or more liquid supply units 370 may be provided. According to one example, it may include a moving nozzle unit and a fixed nozzle unit.

The liquid supply unit 370 supplies a processing liquid onto the substrate W. The liquid supply unit 370 may be a moving nozzle unit or a fixed nozzle unit. According to the illustrated embodiment, the liquid supply unit 370 is a moving nozzle unit. The liquid supply unit 370 is provided in plural, and the treatment liquid may be various types of liquids. For example, each of the liquid supply units 370 may supply different types of liquids. The treatment liquid may be a cleaning composition. The liquid supply unit 370 includes a nozzle 374 and a nozzle moving member 371. The nozzle 374 is movable to the process position and the standby position by the nozzle moving member 371. Here, the process position is a position where the nozzle 374 faces the substrate W supported by the substrate support unit 340, and the standby position is a position where the nozzle 374 is out of the process position. According to an example, the process position may be a position at which the nozzle 374 can supply liquid to the center of the substrate W.

The nozzle moving member 381 includes a support shaft 386, a support arm 382, and a driving member 388. The support shaft 386 is located on one side of the processing container 320. The support shaft 386 has a rod shape whose longitudinal direction faces the third direction 16. The support shaft 386 is provided to be rotatable by the driving member 388. The support arm 382 is coupled to the upper end of the support shaft 386.

The support arm 382 extends vertically from the support shaft 386. A moving nozzle is fixedly coupled to the end of the support arm 382. As the support shaft 386 is rotated, the moving nozzle can swing together with the support arm 382. The moving nozzle can be moved to the process position and the standby position by swing movement. When viewed from above, the moving nozzle may be positioned such that the discharge port coincides with the center of the substrate W at the process position.

Optionally, the support shaft 386 may be provided to enable an elevation movement. In addition, the support arm 382 may be provided to enable forward and backward movement toward its longitudinal direction.

* The treatment liquid may be a cleaning composition. 3 to 6 are views showing an expected structure of a cleaning composition according to an embodiment of the present invention.

The treatment liquid contains a solvent, cellulose, and an amphoteric substance. The solvent can be pure.

3 is a diagram illustrating cellulose according to an embodiment of the present invention. Cellulose may be nanocellullose. The surface of cellulose has hydroxyl groups. The hydroxyl group can be O-. The surface of cellulose can be electrically negative by hydroxyl groups. The surface of cellulose can be hydrophilic. The length of cellulose may be 50 to 500 nm. More preferably, the length of cellulose may be 50 to 200 nm. More preferably, the length of the cellulose may be 100nm ~ 150nm. The width of cellulose may be 10 to 50 nm.

4 is a diagram showing an amphoteric material according to an embodiment. The amphoteric material according to an embodiment may be CAPB (Cocamidopropyl betaine). 5 is a diagram illustrating a CAPB. Amphoteric material can have a tail. The tail of the amphoteric material is hydrophobic. The amphoteric substance may be an amphoteric surfactant. Since CAPB is an example of an amphoteric material having a tail, if it is an amphoteric material having a tail, other materials not recognized by the inventor may be applied.

5 is a diagram illustrating a process of mixing nanocellulose and an amphoteric material according to an exemplary embodiment. 6 is a diagram illustrating a predicted view when nanocellulose and an amphoteric material are combined according to an exemplary embodiment.

5 and 6, the amphoteric material is combined with nanocellulose to form a micelle structure on the surface. As the N+ of the CAPB head is electrically positive, it can bind to the electrically negative O- on the surface of the nanocellulose. In addition, the tail of the amphoteric material is hydrophobic, so that they are bonded to each other to form a micelle structure.

As COO- is located at the outermost part of the micelle structure, the cleaning composition may be electrically negative. The cleaning composition can remove particles through electrical properties that appear in relation to the particles. According to an example, the relationship with the particle may be an electrical repulsion force.

According to an example, the solvent may include 85 wt% or more to less than 99 wt%, nanocellulose 1 wt% or more and 10 wt% or less, and the amphoteric material may contain more than 0 wt% and 5 wt% or less. The more solvent is included, the lower the viscosity. The amphoteric material can be set according to its relationship with nanocellulose.

Hereinafter, a method of manufacturing the cleaning composition will be described.

7 is a flow chart showing a method of manufacturing a cleaning composition according to the first embodiment.

The manufacturing method of the cleaning composition includes preparing a mixed solution by mixing a solvent and cellulose (S110) and mixing an amphoteric substance in a mixed solution of the solvent and cellulose (S120). In the solvent and cellulose mixture, the solvent is 85 wt% or more and 99 wt% or less, and the cellulose is 1 wt% or more and 15 wt% or less. In the solvent and cellulose mixture of 95 wt% or more and 100 wt% or less, an amphoteric substance is mixed in excess of 0 wt% and 5 wt% or less.

8 is a flow chart showing a method of manufacturing a cleaning composition according to the second embodiment. Preparing an aqueous cellulose solution (S210), and mixing the aqueous cellulose solution and an amphoteric substance (S220). The cellulose aqueous solution is an aqueous solution of 1 to 15 wt% of cellulose, 95 wt% or more and 100 wt% or less of an aqueous cellulose solution are mixed with an amphoteric substance exceeding 0 wt% and 5 wt% or less.

The substrate cleaning composition is mixed at room temperature or pressure. Hereinafter, a method of cleaning the substrate will be described.

When the substrate to be cleaned is prepared in the support unit 340 of the apparatus, the substrate cleaning composition is supplied to the substrate to clean the substrate. Cleaning can last for 10 seconds or more. More preferably, the washing step lasts at least 20 seconds. The washing may be performed at room temperature or pressure. The cleaned substrate may be spin-dried or transferred to another chamber for supercritical drying.

9 is a graph showing cleaning power according to Comparative Examples and Examples.

sign Contents Applied fluid i Comparative Example 1 Solvent + Nanocellulose ii Example Solvent + nanocellulose + tailed amphoteric substance iii Comparative Example 2 Solvent + nanocellulose + tailless amphoteric substance

Comparative Example 1 (i) is the result of washing with a mixed solution of a solvent and nanocellulose, Example (ii) is the result of washing with a mixed solution of a solvent, nanocellulose, and an amphoteric substance having a tail, Comparative Example 2 (iii) Represents the result of cleaning using a solvent, nanocellulose, and an amphoteric material without tail (the example and the head characteristics are the same). It can be seen that the cleaning power is remarkably high in the examples.

The detailed description above is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosed contents, and/or the skill or knowledge of the art. The above-described embodiments describe the best state for implementing the technical idea of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiment. In addition, the appended claims should be construed as including other embodiments.

Claims (22)

With a solvent;
With cellulose;
A substrate cleaning composition comprising an amphoteric material.
The method of claim 1,
The amphoteric material is a substrate cleaning composition that forms a micelle structure on the surface of the cellulose
The method of claim 1,
The amphoteric material is a substrate cleaning composition having a tail.
The method of claim 3,
The tail is hydrophobic substrate cleaning composition
The method of claim 1,
The surface of the cellulose is hydrophilic substrate cleaning composition.
The method of claim 1,
The amphoteric material is CAPB (cocamidopropyl betaine) substrate cleaning composition
The method of claim 1,
The solvent is 85wt% or more to less than 99wt%;
The cellulose is 1wt% or more and less than 10wt%;
The amphoteric material is a substrate cleaning composition containing more than 0 wt% and 5 wt% or less
The method of claim 1,
The surface of the cellulose is a substrate cleaning composition having a hydroxyl group.
The method of claim 1,
The cellulose is a substrate cleaning composition having a length of 0.5nm or more and 500nm or less.
The method of claim 1,
The cellulose is a substrate cleaning composition having a length of 50nm or more and 200nm or less.
The method of claim 1,
The cellulose is a substrate cleaning composition having a thickness of 0.5 nm or more and 100 nm or less.
The method according to any one of claims 1 to 11,
The solvent is pure water cleaning composition.
The method according to any one of claims 1 to 11,
The cellulose is a cleaning composition of nanocellulose.
Mixing a solvent and cellulose to prepare a mixed solution;
A method for producing a substrate cleaning composition comprising the step of mixing an amphoteric material in the mixed solution.
The method of claim 14,
The mixed solution is 85 wt% or more and 99 wt% or less of the solvent, and the cellulose is 1 wt% or more and 15 wt% or less.
A method for producing a substrate cleaning composition comprising mixing an aqueous cellulose solution and an amphoteric material.
The method of claim 16,
The method of manufacturing a substrate cleaning composition wherein the cellulose aqueous solution is an aqueous solution of 1 wt% or more and 15 wt% or less of cellulose.
The method according to any one of claims 14 to 17,
Mixing of the substrate cleaning composition is a method of manufacturing a substrate cleaning composition performed at room temperature or pressure.
Preparing a substrate to be cleaned;
A substrate cleaning method comprising the step of cleaning the substrate by supplying the substrate cleaning composition of any one of claims 1 to 11 to the substrate.
The method of claim 19,
The cleaning step is a substrate cleaning method of 10 seconds or more
The method of claim 19,
The cleaning step is a substrate cleaning method of 20 seconds or more.
The method of claim 19,
The cleaning step is a substrate cleaning method performed at room temperature or pressure.

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