KR20210002867A - Manufacturing apparatus and method for parylene layer with real-time monitoring for thickness of parylene layer - Google Patents

Abstract

The present invention relates to a manufacturing apparatus of a parylene layer capable of monitoring thickness in real time and a method thereof and, more specifically, to a manufacturing apparatus of a parylene layer capable of monitoring thickness in real time and a method thereof which use the impedance value of a parylene layer to calculate the thickness of a deposited parylene layer. According to the present invention, the manufacturing apparatus of a parylene layer capable of monitoring thickness in real time comprises: a deposition chamber; a sensor unit arranged in the deposition chamber; an impedance analysis unit to measure the impedance of a parylene layer deposited on the sensor unit in the deposition chamber through the sensor unit; and a calculation unit to calculate the thickness of the deposited parylene layer based on information on the impedance of the parylene layer measured by the impedance analysis unit, previously stored information on a reference thickness of the parylene layer, and information on reference impedance.

Description

Manufacturing apparatus and method of parylene layer capable of real-time thickness monitoring {MANUFACTURING APPARATUS AND METHOD FOR PARYLENE LAYER WITH REAL-TIME MONITORING FOR THICKNESS OF PARYLENE LAYER}

The present invention relates to an apparatus and method for producing a parylene layer capable of real-time thickness monitoring.

In more detail, the present invention relates to an apparatus and method for manufacturing a parylene layer capable of real-time thickness monitoring that calculates the thickness of the deposited parylene layer using the impedance value of the parylene layer.

Parylene (poly-p-xylene) is a polymer consisting of a chain of benzene rings in which two hydrogen atoms are substituted with a methylene system.

Parylene is a material that can be coated on a substrate or the like by evaporation, and it is possible to obtain a uniform thin film with excellent airtightness without pin-holes. It is also an eco-friendly material that does not contain volatile organic compounds.

Parylene is used as a coating material for credit cards and resident registration cards, and has been used in various medical equipment and electronic equipment.

There is a problem in that it is difficult to control the thickness of the parylene layer deposited in the deposition chamber when forming a parylene layer using a conventional parylene manufacturing apparatus.

As a conventional method for controlling the thickness of the parylene layer, a method of controlling the content of parylene dimer introduced into the vaporization unit or a method of controlling the deposition time is mainly used.

However, even if the content of the parylene dimer is set to be the same or the deposition time is set to be the same, the thickness of the actually formed parylene layer may vary.

As a prior art for solving this problem, Korean Patent Laid-Open Publication No. 10-2002-0013310 [Document 1] discloses a technical configuration for installing a thickness gauge equipped with a quartz crystal inside the chamber.

In the technique according to Document 1, the technical configuration of how the thickness gauge equipped with the quartz crystal measures the thickness of the parylene layer or the structure of the thickness gauge equipped with the quartz crystal is not posted at all.

As another conventional technique for measuring the thickness of the parylene layer, Korean Patent Laid-Open Publication No. 10-2014-0009957 [Document 2] arranges a QCM (Quartz Crystal Microbalance) sensor inside the deposition chamber, and the resonance frequency of the QCM sensor A technical configuration is posted to stop the deposition when the target value is reached.

The technique according to Document 1 has a problem in that it is difficult to monitor the thickness of the parylene layer in real time during the deposition process.

[Document 1] Korean Patent Application Publication No. 10-2002-0013310 [Document 2] Korean Patent Application Publication No. 10-2014-0009957

An object of the present invention is to provide an apparatus and method for producing a parylene layer capable of real-time thickness monitoring that measures the impedance of the parylene layer and calculates the thickness of the parylene layer using the measured impedance.

The apparatus for manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention includes a deposition chamber, a sensor unit disposed in the deposition chamber, and parylene deposited on the sensor unit in the deposition chamber through the sensor unit. ) The deposited based on the information on the impedance of the parylene layer measured by the impedance analysis unit and the impedance analysis unit to measure the impedance of the layer, information on the reference thickness of the parylene layer stored in advance, and information on the reference impedance It may include an operation unit that calculates the thickness of the parylene layer.

In addition, a display unit for displaying information on the thickness of the parylene layer calculated by the operation unit may be further included.

In addition, the calculation unit may calculate the thickness of the parylene layer according to the following equation.

Equation: Thickness = (Standard Impedance -1) × (Rate of change in standard impedance per thin film reference thickness/thin film reference thickness)

(However, standard impedance = impedance during thin film deposition/pre-process impedance)

In addition, the sensor unit includes a substrate, a main electrode part including a first electrode and a second electrode disposed on the substrate, and a first pad electrode corresponding to the first electrode. A pad electrode part including a (First Pad Electrode) and a second pad electrode corresponding to the second electrode, and a first electrode electrically connecting the first electrode and the first pad electrode. A connecting electrode part including a first connecting electrode and a second connecting electrode electrically connecting the second electrode and the second pad electrode may be included.

In addition, the first electrode includes a plurality of first branch electrodes electrically connected to the first connection electrode, and the second electrode is electrically connected to the second connection electrode, and the second electrode It may include a second branch electrode that is interdigitated with the first branch electrode while being spaced apart from the first branch electrode.

The impedance analyzer may measure the impedance of the parylene layer deposited on the substrate in a form covering the first electrode and the second electrode.

In addition, the impedance analysis unit receives a DAC channel for supplying a sine wave to the first electrode through the first pad electrode as an input signal and a responsive potential corresponding to the sine wave from the second electrode through the second pad electrode. ADC channels that can be included.

The method of manufacturing a parylene layer according to the present invention includes depositing a parylene layer on the surface of a sensor unit disposed in a deposition chamber, obtaining an impedance after deposition from the sensor unit, and an impedance value obtained from the sensor unit. And calculating a thickness of the deposited parylene layer based on information about a reference thickness of the parylene layer stored in advance and information about a reference impedance.

In addition, it may include displaying information on the thickness of the deposited parylene layer on a screen.

In addition, the thickness of the deposited parylene layer may be calculated according to the following equation.

Equation: Thickness = (Standard Impedance -1) × (Rate of change in standard impedance per thin film reference thickness/thin film reference thickness)

(However, standard impedance = impedance during thin film deposition / impedance before process)

In the present invention, it is possible to monitor the thickness of the parylene layer in real time by measuring the impedance of the parylene layer after (or during the deposition) of the parylene layer and calculating the thickness of the parylene layer using information on the measured impedance. It works.

In addition, the present invention has an effect that the thickness of the parylene layer can be accurately calculated by calculating the thickness of the parylene layer using an impedance value, which is an inherent characteristic of the parylene layer.

1 is a view for explaining the configuration of an apparatus for manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention.
2 to 4 are views for explaining the sensor unit.
5 to 6 are views for explaining a driving unit.
7 to 11 are views for explaining a method of manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention.

Hereinafter, an apparatus and method for manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, various modifications may be made and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and described in detail in the detailed description. This is not intended to limit the present invention to a specific embodiment, it can be understood to include all changes, equivalents, or substitutes included in the spirit and scope of the present invention.

In describing the present invention, terms such as first and second may be used to describe various elements, but the elements may not be limited by the terms. These terms may be used only for the purpose of distinguishing one component from another component. For example, without departing from the scope of the present invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

The term and/or may include a combination of a plurality of related listed items or any of a plurality of related listed items.

When a component is referred to as being "connected" or "connected" to another component, it is said that it is directly connected to or may be connected to the other component, but other components may exist in the middle. Can be understood. On the other hand, when a component is referred to as being "directly connected" or "directly connected" to another component, it may be understood that there is no other component in the middle.

The terms used in this document are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions may include plural expressions unless the context clearly indicates otherwise.

In this document, terms such as "comprises" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and one or more other features. It may be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance.

Unless otherwise defined, all terms, including technical or scientific terms, used herein may have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary may be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless explicitly defined in this application, interpreted as an ideal or excessively formal meaning. May not be.

In addition, the embodiments disclosed in this document are provided to more completely describe to those of ordinary skill in the art, and the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation.

In describing the present invention in this document, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description may be omitted.

Various embodiments described in this document may be implemented in a recording medium that can be read by a computer or a similar device using software, hardware, or a combination thereof.

According to a hardware implementation, embodiments of the present invention include application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), and processors. (processors), controllers (controllers), micro-controllers (micro-controllers), microprocessors (microprocessors), it may be implemented using at least one of an electrical unit for performing a function.

Meanwhile, according to software implementation, embodiments such as procedures and functions in the present invention may be implemented together with separate software modules that perform at least one function or operation.

1 is a view for explaining the configuration of an apparatus for manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention.

Referring to FIG. 1, a parylene layer manufacturing apparatus 10A capable of real-time thickness monitoring according to the present invention (hereinafter, may be referred to as a'manufacturing apparatus') is a deposition chamber (deposition chamber 30), a sensor unit (Sensor Part, 20), a pyrolysis unit 40, a vaporization unit 50, and may include a driving unit 10.

Since the components shown in FIG. 1 are not essential, it is also possible to implement the manufacturing apparatus 10A having more components or fewer components.

The vaporization unit 50 may vaporize by heating a solid parylene dimer.

The vaporization part 50 may be, for example, a pipe-shaped body in the inner space and a heating coil installed in a spiral shape on the inner wall of the body, but the present invention is not limited thereto, and if it is capable of heating the parylene dimer Anything can be fine.

The pyrolysis unit 40 may be connected to the vaporization unit 50.

The pyrolysis unit 40 may thermally decompose the gaseous parylene supplied from the vaporization unit 50 to change it into a monomer.

In the present invention, parylene may be any one of parylene N, C, D, VT4, and AF4, but the present invention may not be limited thereto.

The sensor unit 20 may be disposed in the deposition chamber 30 to measure the impedance of the parylene layer formed by deposition.

The deposition chamber 30 is connected to the pyrolysis unit 40 and may include an internal space in which an object is seated.

Here, the object is an object for forming a parylene layer (parylene thin film), and may be various, for example, a card.

During the deposition process, a parylene layer may also be formed on the surface of the sensor unit 20. Accordingly, the sensor unit 20 can also be regarded as a kind of object.

The deposition chamber 30 may deposit the parylene monomer supplied from the pyrolysis unit 40 on the object.

Although not shown in the drawing, the deposition chamber 30 may include an inlet (not shown) through which the object is supplied and an outlet (not shown) through which the object is discharged.

Alternatively, it may be possible to supply and discharge the object through one entrance.

In addition, although not shown, the deposition chamber 30 may further include a fixing means such as a plate for fixing (arranging) the object.

In addition, although not shown in the drawings, a chiller trap, a vacuum pump, or the like may be applied to the manufacturing apparatus 10A according to the present invention.

The driving unit 10 can control the driving of the manufacturing apparatus 10A according to the present invention.

For example, the driving unit 10 may control functions and operations of the pyrolysis unit 40, the opportunity unit 50, and/or the deposition chamber 30.

Preferably, the driving unit 10 measures the impedance of the parylene layer deposited on the sensor unit 20 using the sensor unit 20, and calculates the thickness of the parylene layer based on the information on the measured impedance. I can.

The driving unit 10 will be more clarified through the following description.

2 to 4 are views for explaining the sensor unit. Hereinafter, descriptions of the parts described in detail above may be omitted.

The sensor unit 20 may be disposed in the deposition chamber 30 and used to measure the impedance of the parelin layer.

As shown in FIG. 2, the sensor unit 20 includes a substrate 21, a main electrode part 23, a pad electrode part 22, and a connecting electrode part. , 24) may be included.

The main electrode part 23 may include a first electrode 23a and a second electrode 23b disposed on the substrate 21.

The first electrode 23a includes a plurality of first branch electrodes 23a1, 23a2, 23a3..., and the second electrode 23b includes a plurality of second branch electrodes. Electrode, 23b1, 23b2, 23b3......) may be included.

The plurality of first branch electrodes 23a1, 23a2, 23a3......) and the plurality of second branch electrodes 23b1, 23b2, 23b3......) can be engaged with each other as if they are interlocked. .

In consideration of this, it can be seen that the first electrode 23a and the second electrode 23b form an interdigitated electrode.

It may be desirable that the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) are separated by a predetermined distance, but the gap between them is sufficiently small. have. For example, the distance between the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) is 1 to 100 µm (micrometer ) Can be.

In this case, the impedance of the parylene layer PL formed on the main electrode part 23 may be measured.

Measuring the impedance of the parylene layer PL formed on the sensor unit 20 can be seen as measuring the impedance of the parylene layer PL formed on the main electrode unit 23 of the sensor unit 20.

The first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) have a predetermined pattern in order to more easily measure the impedance of the parylene layer. It may be desirable to have. For example, as shown in Fig. 3, the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) are wavy. It is possible to have a form. In this case, the first electrode 23a and the second electrode 23b may be referred to as interdigitated and wave-shaped electrodes (IWE).

3A is a 40-fold enlargement of the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......), ( B) is an enlargement of the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) by 100 times.

The pad electrode unit 22 may be used to electrically connect the sensor unit 20 to the driving unit 20. In detail, the pad electrode unit 22 may be used to electrically connect the sensor unit 20 to the impedance analysis unit (not shown) of the driving unit 20.

The pad electrode part 22 includes a first pad electrode 22a corresponding to the first electrode 23a and a second pad electrode 22b corresponding to the second electrode 23b. Can include.

The first pad electrode 22a may be electrically connected to the first electrode 23a, and the second pad electrode 22b may be electrically connected to the second electrode 23b.

The connection electrode part 24 may electrically connect the pad electrode part 22 and the main electrode part 23.

The connection electrode part 24 includes a first connecting electrode (24a) that electrically connects the first electrode 23a and the first pad electrode 22a, a second electrode 23b, and a second pad. It may include a second connecting electrode (Second Connecting Electrode, 24b) electrically connecting the electrode (22b).

The first connection electrode 24a may electrically connect the plurality of first branch electrodes 23a1, 23a2, 23a3......) and the first pad electrode 23b, and the second connection electrode 24b is The plurality of second branch electrodes 23b1, 23b2, 23b3......) and the second pad electrode 24b may be electrically connected.

The first connection electrode 24a and the second connection electrode 24b may include a portion extending in a Longitudinal Direction of the sensor unit 20, that is, a first direction DR1.

In addition, a plurality of first branch electrodes 23a1, 23a2, 23a3......) and a plurality of second branch electrodes 23b1, 23b2, 23b3......) are in the width direction of the sensor unit 20 (latitudinal Direction), that is, may include a portion extending in the second direction (Second Direction, DR2).

In order to more accurately measure the impedance of the parylene layer PL formed on the main electrode part 23 of the sensor part 20, the main electrode part 23 is separated by a sufficient distance from the pad electrode part 22. It may be desirable to be.

For example, the distance G2 between the main electrode part 23 and the pad electrode part 22 in the first direction DR1 is the width G1 of the pad electrode part 22 and the main electrode part 22. It may be larger than the width G3.

Meanwhile, the first electrode 23a and the second electrode 23b may have a multi-layer structure.

For example, as shown in FIG. 4, the first electrode 23a and the second electrode 23b are formed on the first layers 23a-1 and 23b-1 and the first layers 23a-1 and 23b-1. It may include second layers 23a-2 and 23b-2 formed on the.

The first layers 23a-1 and 23b-1 may include a material having high affinity with the substrate 21. Accordingly, the first electrode 23a and the second electrode 23b may more strongly adhere to the substrate 21. For example, the first layers 23a-1 and 23b-1 may include titanium (Ti).

The second layers 23a-2 and 23b-2 may include a material having a sufficiently high electrical conductivity. For example, the second layers 23a-2 and 23b-2 may include gold (Au).

In addition, in order for the first electrode 23a and the second electrode 23b to have high electrical conductivity, the thickness t2 of the second layers 23a-2 and 23b-2 is the first layers 23a-1 and 23b. It may be thicker than the thickness t1 of -1).

An example of a method of manufacturing the sensor unit 20 will be described below.

First, a glass substrate 21 having a length of 63 mm, a width of 16 mm and a thickness of 1.1 mm may be prepared, and the prepared glass substrate 21 may be ultrasonicated in 70% methanol.

Thereafter, a negative photoresist may be spin-coated on the ultrasonically treated glass substrate 21. Here, DNR L300-30 (Dongjin Semichem co., Hwaseong, Korea) was used as a negative photoresist.

Thereafter, the negative photoresist may be patterned according to the shape of the first electrode 23a and the second electrode 23b.

Thereafter, it may be formed by depositing a titanium (Ti) layer and a gold (Au) layer by an electron beam deposition method.

Here, the thickness of the titanium (Ti) layer is 25 nm (nanometers), the thickness of the gold (Au) layer is 50 nm (nanometers), and the first branch electrodes 23a1, 23a2, 23a3... The width of the second branch electrodes 23b1, 23b2, 23b3......) is 30 µm (micrometers), the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrode The interval between (23b1, 23b2, 23b3......) is 30 µm (micrometer).

It is possible to form the sensor unit 20 in this way.

5 to 6 are views for explaining a driving unit. Hereinafter, descriptions of the parts described above may be omitted.

Referring to FIG. 5, the driving unit 10 may include an impedance analysis part 110, a calculating part 120, and a control unit 100.

Alternatively, the driving unit 10 may further include a display unit 130.

Since the components shown in FIG. 5 are not essential, it is possible to implement the driving unit 10 having more components or fewer components.

The controller 100 may control overall functions and operations of the driving unit 10.

For example, the controller 100 may control the display of information on the impedance of the parylene layer and information on the thickness of the parylene layer.

When the impedance analysis unit 110, the operation unit 120, and the display unit 130 are equipped with their own control functions, the control unit 100 may be omitted.

The impedance analysis unit 110 may measure the impedance of the parylene layer deposited on the sensor unit 30 in the deposition chamber 30 through the sensor unit 20.

The impedance analysis unit 110 may be manufactured based on a data acquisition board (Data Acquisition, DAQ). That is, the impedance analysis unit 110 may be referred to as a DAQ-based impedance analysis unit 110.

For example, as the impedance analysis unit 110, USB-4431 (National Instruments, Austin, TX, USA) may be used.

The impedance analysis unit 110 includes a digital to analog converter (DAC) channel 111 that supplies a sine wave as an input signal to the first electrode 23a through the first pad electrode 22a, and a responsive potential corresponding to the sine wave ( A first ADC (Analog to Digital Converter) channel 112 for receiving a response signal) from the second electrode 23b through the second pad electrode 22b may be included.

For example, a sine wave having an amplitude of 1 Vrms may be generated through the DAC channel 111. In addition, the ADC channel 112 may provide a resolution of 24 bits and a sample rate of 102 kS/s.

In addition, the impedance analysis unit 110 may further include a second ADC channel 113 that receives an input signal as a reference signal.

A resistor R and an amplifier Amp may be sequentially disposed between the DAC channel 111 of the impedance analyzer 110 and the first pad electrode 22a.

Zx shown in FIG. 5 may mean the load of the sensor unit 20. That is, Zx may correspond to the parylene layer PL formed on the main electrode part 23.

The calculation unit 120 may calculate the thickness of the parylene layer based on information on the impedance of the parylene layer measured by the impedance analysis unit 110, information on the reference thickness of the parylene layer, and information on the reference impedance.

Information on the reference thickness and reference impedance of the parylene layer may be referred to as reference information.

The reference information of the parylene layer can be measured/acquired in advance and stored. For example, the control unit 100 may obtain and store reference information in advance using a predetermined memory means.

The operation unit 120 may be based on LabVIEW programming.

The operation unit 120 includes a waveform simulator (Wave Simulator, 125), a PLL unit (Phase Locked Loop, 121), a mixer (Mixer, 122), a low pass filter (Low Pass Filter, 123), and an impedance calculation unit 124. I can.

The waveform simulator 125 may correspond to a sine wave as an input signal.

The PLL unit 121 may correspond to a reference signal. That is, the PLL unit 121 may correspond to the second ADC channel 113.

The mixer 122 may mix the reference signal and the response signal.

The low-pass filter 123 may remove noise of a high frequency component.

The impedance calculating unit 124 may calculate impedance from a signal from which the low-pass filter 123 removes noise.

In addition, the impedance calculator 124 may obtain information on the thickness of the parylene layer based on the information on the calculated impedance.

The operation unit 120 of this configuration is a lock-in amplifier method, so that loss of a signal to be measured is minimized, interference of noise is minimized, and a signal-to-noise ratio is reduced to sensitively calculate the impedance of the parylene layer.

The display unit 130 may display various information on the parylene layer manufacturing apparatus 100A on the screen. For example, the display unit 130 may display information on the thickness of the parylene layer calculated by the operation unit 120 on the screen.

On the other hand, let us examine the reliability of the impedance analysis unit 110 in order to secure the reliability of the calculation of the thickness of the parylene layer in the parylene layer manufacturing apparatus 100A according to the present invention.

As shown in (A) of FIG. 6, an RC circuit is formed by connecting a resistor (R) and a capacitor (C) in parallel. Here, the resistance value of the resistor R and the capacitance of the capacitor C are known values.

Thereafter, the impedance analysis unit 110 was connected to both ends of the RC circuit of (A) to measure the impedance.

As a result of the measurement, as shown in (B) of FIG. 6, it can be seen that the impedance analysis unit 110 has sufficiently accurately measured the impedance when the frequency of the input signal is 10 Hz, 100 Hz, or 1000 Hz.

Based on this, it can be seen that the impedance analysis unit 110 in the parylene layer manufacturing apparatus 100A according to the present invention can accurately measure the impedance of the parylene layer.

A method of manufacturing a parylene layer using the parylene layer manufacturing apparatus 100A described above will be described below.

7 to 11 are views for explaining a method of manufacturing a parylene layer capable of real-time thickness monitoring according to the present invention. Hereinafter, descriptions of the parts described in detail above may be omitted.

Referring to FIG. 7, first, reference information may be obtained (S100).

Here, the reference information may include information on the reference thickness of the parylene layer PL and/or information on the reference impedance of the parylene layer PL. This reference information will be described below.

Thereafter, the sensor unit 20 may be disposed in the deposition chamber 30 (S110).

Thereafter, it may be formed by depositing a parylene layer PL on the surface of the sensor unit 20 (S120).

For example, 5 g of parylene dimer may be put into the vaporization unit 50, and the parylene dimer may be vaporized at a temperature of 150°C in the vaporization unit 50.

Thereafter, the pyrolysis unit 40 may pyrolyze the gaseous parylene at a temperature of 680° C. to convert it into a monomer.

Thereafter, a parylene monomer may be deposited on the surface of the sensor unit 20 for 150 minutes in the deposition chamber 30.

Through this method, a parylene layer PL may be deposited on the surface of the sensor unit 20, in detail, on the main electrode unit 23.

Thereafter, the impedance of the sensor unit 20 on which the parylene layer is formed may be measured, and information thereon may be obtained (S130).

In detail, the impedance analysis unit 110, as shown in FIG. 8, is a paryl deposited on the substrate 21 of the sensor unit 20 in a form covering the first electrode 23a and the second electrode 23b. The impedance of the len layer PL can be measured. Although not shown in FIG. 8, the parylene layer PL may include a portion covering the first pad electrode 22a and the second pad electrode 22b.

The impedance analysis unit 110 may measure the impedance of the sensor unit 20 according to Equation 1 below. In Equation 1, it is assumed that the amplitude of the input signal is 1V and the resistance is 1MΩ.

Equation 1

Vm = Vr+Vi

Iin = 1V/1MΩ

Zm = Vm/Iin = (Vr+iVi)/Iin = Zr+iZi

Phase(Φ) = tan ^-1 (Zi/Zr)

Vr: Real part of the measured voltage

Vi: the imaginary part of the measured voltage

Iin: input current

Zr: real part of total impedance

Zi: the imaginary part of the total impedance

Φ: Phase

Thereafter, the operation unit 120 may calculate and obtain the change rate of the impedance (S140).

The calculation unit 120 may calculate the impedance change rate according to Equation 2 below.

Equation 2

Z′: real part of impedance

Z″: the imaginary part of the impedance

Z′(0): Real part of impedance at 0 second

Z″(0): The imaginary part of the impedance at 0 seconds

An example of a change in impedance calculated by the operation unit 120 is shown in FIG. 9.

The graph of FIG. 9 is data obtained by measuring the impedance of the parylene layer PL in response to an input signal of 2.15 kHz for 150 minutes.

The data of FIG. 9 may be output to be identifiable through the display unit 130.

9A may correspond to a change in the real part of the impedance, and (B) may correspond to a change in the imaginary part of the impedance.

Referring to FIGS. 9A and 9B, it can be seen that the real and imaginary parts of the impedance of the sensor unit 20 increase in an arctangent form according to the deposition time.

Looking more at the graph of FIG. 9, it can be seen that the resistance and reactance of the parylene layer PL at 2.15 kHz decreased according to the types of the parylene layer (C, N, and D).

From repeated measurements, the mean and standard deviation (n3) of the resistance change was 0.69±0.70% for the comparative example (no parylene layer, Control), 17.86±0.23% for parylene C, and 7.22±0.84 for parylene N. %, in the case of parylene D, it can be confirmed that it is 4.93±0.97%.

In addition, the mean and standard deviation (n3) of the reactance was 0.31±0.65% for the comparative example (no parylene layer, Control), 9.73±0.46% for parylene C, and 3.95±0.94% for parylene N. , In the case of parylene D, it can be confirmed that it is 2.74±0.55%.

Here, the measured resistance or reactance of the parylene layer may be determined by electrical properties of the parylene film.

The surface resistivity of parylene C, N or D is 10 ¹⁵ , 10 ¹⁵ , 5×10 ¹⁵ ohm·cm at room temperature, and the dielectric constant of parylene C, N or D is 3.1, 2.65, 2.82 for 1 kHz.

Thereafter, the calculation unit 120 may calculate and obtain information on the thickness of the parylene layer PL based on the information on the impedance of the sensor unit 20 (S150).

In the calculation step (S150), not only information on the impedance of the sensor unit 20, but also information on the reference thickness of the parylene layer PL stored in advance and information on the reference impedance, the deposited parylene layer PL is You can calculate the thickness.

For example, the calculation unit 120 may calculate the thickness of the parylene layer PL according to Equation 3 below.

Equation 3

Thickness = (Standard Impedance-1)×(Rate of change of standard impedance per thin film reference thickness/thin film reference thickness)

Standard Impedance: Impedance during thin film deposition/pre-process impedance

Here, the information on the impedance for each thin film reference thickness and the information on the thin film reference thickness may be in a state of being confirmed in advance.

The thin film reference thickness may correspond to information on the reference thickness of the parylene layer PL, and the impedance during thin film deposition may correspond to information on the reference impedance of the parylene layer PL.

Prior to the full-scale parylene layer PL deposition process, a parylene layer PL is experimentally deposited on the sensor unit 20 at predetermined time units, and the impedance and thickness of the deposited parylene layer PL are measured to measure the parylene layer ( Information on the correlation between the thickness of PL) and the impedance can be checked in advance.

For example, parylene is deposited on the surface of the sensor unit 20 for 10 minutes, 20 minutes ... 150 minutes to form a parylene layer PL, respectively, and on the formed parylene layer PL. The thickness of the parylene layer PL is measured and the impedance is measured to store the data, and information on the correlation between the thickness of the parylene layer PL and the impedance can be derived.

Here, the thickness of the parylene layer PL measured for each deposition time corresponds to the reference thickness (thin film reference thickness), and the impedance of the parylene layer PL measured for each deposition time is the reference impedance (thin film deposition Time impedance).

In addition, for each reference thickness (thin film reference thickness), the rate of change of the standard impedance during the deposition time may correspond to the rate of change of the standard impedance for each reference thickness of the thin film.

The measurement of the thickness of the parylene layer (PL) is Alpha-Step, Atomic Force Microscope, Scanning Electron Microscope, Fourier-Transform Infrared Spectroscopy, or Transmission Electron Microscope. (Transmission Electron Microscope) can be used.

The pre-process impedance may mean an impedance of the sensor unit 20 measured in a state in which the parylene layer PL is not formed on the sensor unit 20.

Here, the first branch electrodes 23a1, 23a2, 23a3......) of the first electrode 23a of the sensor unit 20 and the second branch electrodes 23b1, 23b2, 23b3 of the second electrode 23b ......) are located close enough, but the first branch electrodes 23a1, 23a2, 23a3......) and the second branch electrodes 23b1, 23b2, 23b3......) are Since they are separated from each other, the pre-processing impedance of the sensor unit 20 may have a considerably large value.

After the test deposition, in the process of depositing the parylene layer PL in earnest, it is assumed that the thickness of the parylene layer PL is measured at a time point t1 (50 minutes). It is assumed that the deposition process started at the point t0.

In the test deposition process, the impedance of the parylene layer PL formed by the test deposition for 50 minutes may correspond to the reference impedance (impedance t1 during thin film deposition).

In the test deposition process, the thickness of the parylene layer PL formed by the test deposition for 50 minutes may be measured using an atomic microscope or the like to correspond to the reference thickness (thin film reference thickness t1).

In addition, the rate of change of the standard impedance for 50 minutes may correspond to the rate of change of the standard impedance for each thin film reference thickness.

In detail, the impedance of the sensor unit 20 (pre-process impedance (X1)) is measured before performing the test deposition.

In addition, a value obtained by dividing the revolving impedance X1 by the impedance of the parylene layer PL formed by the test deposition for 50 minutes, that is, the thin film deposition impedance t1, may correspond to the standard impedance for each thin film reference thickness. .

In addition, dividing the standard impedance for each thin film reference thickness by the time value (50 minutes) can be referred to as the rate of change of the standard impedance for each thin film reference thickness.

In consideration of this, the thickness of the parylene layer PL at the time t1 (50 minutes) may be calculated in the same manner as in Equation 4 below.

Equation 4

Thickness (t1) = (Standard Impedance -1) × (Standard thickness of thin film (t1) / Rate of change of standard impedance by standard thickness (0-t1))

Standard impedance: Impedance during thin film deposition (t1) / Impedance before process (0)

Here, the case of 50 minutes has been exemplified, but any point in time from the start of deposition to the completion of deposition may be possible.

An example of a change in the thickness of the parylene layer PL calculated by the operation unit 120 is shown in FIG. 10.

The graph of FIG. 10 is data obtained by calculating a change in the thickness of the parylene layer PL for 500 minutes.

Referring to FIG. 10, it can be seen that the thickness of the parylene layer PL deposited on the sensor unit 20 increases in an arctangent form according to the deposition time.

A change in thickness of the parylene layer PL over time may have a pattern similar to a change in impedance over time described in FIG. 9.

In this way, when the thickness of the parylene layer PL is calculated using information on the impedance of the parylene layer PL, the thickness of the parylene layer PL can be accurately monitored in real time. Accordingly, reliability of products having a parylene layer PL as a coating film can be improved, and quality control can be facilitated.

Meanwhile, in the full-scale parylene layer PL deposition process, it is possible to arrange the sensor unit 20 together with the object in the deposition chamber 30.

For example, as in the case of FIG. 11, it is possible to arrange the main plate 60 in the deposition chamber 30 and to arrange at least one object 61 on the main plate 60. Here, the main plate 60 may be omitted.

In this case, the thickness of the parylene layer PL coated on the object 61 is not directly measured, but is applied to the object 61 based on information on the impedance of the parylene layer PL coated on the sensor unit 20. It may be possible to indirectly measure the thickness of the parylene layer PL to be coated.

As such, it will be appreciated that the technical configuration of the present invention described above can be implemented in other specific forms without changing the technical spirit or essential features of the present invention by those skilled in the art.

Therefore, the embodiments described above should be understood as illustrative and non-limiting in all respects, and the scope of the present invention is indicated by the claims to be described later rather than the detailed description described above, and the meaning and scope of the claims And it should be construed that all changes or modified forms derived from the equivalent concept are included in the scope of the present invention.

Claims (10)

Deposition Chamber;
A sensor unit disposed in the deposition chamber;
An impedance analysis unit measuring impedance of a parylene layer deposited on the sensor unit in the deposition chamber through the sensor unit; And
A calculating unit for calculating a thickness of the deposited parylene layer based on information on the impedance of the parylene layer measured by the impedance analyzer, information on the reference thickness of the parylene layer stored in advance, and information on the reference impedance;
An apparatus for producing a parylene layer comprising a. The method of claim 1,
The apparatus for manufacturing a parylene layer further comprising a display unit for displaying information on the thickness of the parylene layer calculated by the operation unit on a screen. The method of claim 1,
The operation unit is a parylene layer manufacturing apparatus for calculating the thickness of the parylene layer according to the following equation.
Equation: Thickness = (Standard Impedance -1) × (Rate of change in standard impedance per thin film reference thickness/thin film reference thickness)
(However, standard impedance = impedance during thin film deposition / impedance before process) The method of claim 1,
The sensor unit
Board;
A main electrode part including a first electrode and a second electrode disposed on the substrate;
A pad electrode part including a first pad electrode corresponding to the first electrode and a second pad electrode corresponding to the second electrode; And
A first connecting electrode electrically connecting the first electrode and the first pad electrode, and a second connecting electrode electrically connecting the second electrode and the second pad electrode. A connecting electrode part including;
An apparatus for producing a parylene layer comprising a. The method of claim 4,
The first electrode is
Including a plurality of first branch electrodes electrically connected to the first connection electrode,
The second electrode is
An apparatus for manufacturing a parylene layer comprising a second branch electrode electrically connected to the second connection electrode and interdigitated with the first branch electrode while being spaced apart from the first branch electrode. The method of claim 5,
The impedance analysis unit
An apparatus for manufacturing a parylene layer for measuring the impedance of the parylene layer deposited on the substrate in a form covering the first electrode and the second electrode. The method of claim 4,
The impedance analysis unit
A DAC channel for supplying a sinusoidal wave as an input signal to the first electrode through the first pad electrode; And
An ADC channel for receiving a responsive potential corresponding to the sinusoidal wave from the second electrode through the second pad electrode;
An apparatus for producing a parylene layer comprising a. Depositing a parylene layer on a surface of a sensor unit disposed in a deposition chamber;
Obtaining an impedance after deposition from the sensor unit; And
Calculating a thickness of the deposited parylene layer based on an impedance value obtained from the sensor unit, information on a reference thickness of the parylene layer stored in advance, and information on a reference impedance;
Method for producing a parylene layer comprising a. The method of claim 8,
A method of manufacturing a parylene layer comprising the step of displaying information on a thickness of the deposited parylene layer on a screen. The method of claim 8,
The thickness of the deposited parylene layer is calculated according to the following equation.
Equation: Thickness = (Standard Impedance -1) × (Rate of change in standard impedance per thin film reference thickness/thin film reference thickness)
(However, standard impedance = impedance during thin film deposition / impedance before process)

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