KR20210001189A - Apparatus of Atomic Layer Deposition - Google Patents

Abstract

The present invention relates to an atomic layer deposition device. The present invention relates to the atomic layer deposition device for coating a particle surface, which has a simple configuration, is not sensitive to movement of powder, and can perform large processing. The device comprises a reaction chamber and one or more powder holders.

Description

Atomic layer deposition apparatus {Apparatus of Atomic Layer Deposition}

The present invention relates to an atomic layer deposition apparatus, and in particular, to an atomic layer deposition apparatus of a batch type, for example, to an atomic layer deposition apparatus for coating the surface of particles, and the deposition is performed by the formation of an air stream. It can be applied to various deposition methods made, for example, chemical vapor deposition, molecular layer deposition, or deposition by a combination thereof.

Atomic Layer Deposition (ALD) is a technique of forming a film on a substrate based on the sequential supply of chemical substances, which are typically gas phase, and has been applied in various fields.

In addition, the atomic layer deposition method is a promising method for coating the surface of particles (also referred to as'powder') due to its high conformality (step coverage) and coating thickness control characteristics.

The atomic layer deposition on the particle surface is divided into a method using a fluidized bed reactor (FBR) and a method using a rotary reactor.

Looking at the fluidized bed reactor, the surface of the particles is coated by injecting a source gas while momentarily buoying the particles by controlling the flow rate and pressure of the gas injected into the reactor. However, in the fluidized bed reactor, it is difficult to control the flow and mixing of the powder depending on the size of the particles, the surface condition, the type of the material, the total powder mass and the filling rate relative to the reactor volume.

On the other hand, looking at the rotary reactor, while the reactor installed parallel to the ground rotates, the powder moves from the bottom of the reactor to the top and then descends in the direction of gravity, thereby separating the particles. However, in the rotary reactor, not only the powder filling amount, the filling rate, and the properties of the material have a large influence on the coating processability, but also the configuration and operation of the device are complicated.

Therefore, there is a need to develop an atomic layer deposition apparatus for particle surface coating that is not sensitive to the flow of powder and can be processed in a simple manner as well as mass processing.

An object of the present invention is to provide an atomic layer deposition apparatus for particle surface coating.

In addition, it is an object of the present invention to provide an atomic layer deposition apparatus for particle surface coating capable of mass-processing without being sensitive to the flow of powder.

In order to solve the above problems, according to an aspect of the present invention, as an atomic layer deposition apparatus for coating a particle surface, at least one provided to be connected to at least one source for supplying at least one source gas and an inert gas, respectively. In the reaction chamber and the reaction chamber having at least one exhaust port provided to be connected to an inlet port, a first receiving space connected to the inlet port, and a pumping unit for exhausting the gas supplied to the first receiving space There is provided an atomic layer deposition apparatus including one or more powder holders disposed, one surface is open, and having a second accommodation space for receiving particles.

In addition, according to another aspect of the present invention, at least one supply source for supplying at least one source gas and an inert gas, respectively, at least one inlet port provided to be connected to the supply source, a first accommodation space connected to the inlet port, and a first A reaction chamber connected to the receiving space and having one or more exhaust ports for exhausting the gas supplied to the first receiving space, a pumping unit connected to the exhaust port, disposed in the reaction chamber, one side open, and receiving particles It may include at least one powder holder having a second accommodation space for, and a control unit for controlling the supply source and the pumping unit.

In addition, when the powder holder is disposed in the reaction chamber, the control unit is provided to cross-inject the source gas and the inert gas into the first accommodation space.

As described above, the atomic layer deposition apparatus related to at least one embodiment of the present invention has the following effects.

As an atomic layer deposition apparatus for particle surface coating, mass processing is possible without being sensitive to the flow of powder.

1 is a schematic diagram showing an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a schematic diagram showing an embodiment of a powder holder.
3 and 4 are schematic diagrams showing still another embodiment of a powder holder.

Hereinafter, an atomic layer deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In addition, regardless of the reference numerals, the same or corresponding components are given the same or similar reference numbers, and duplicate descriptions thereof will be omitted, and the size and shape of each component member shown for convenience of explanation are exaggerated or reduced. Can be.

1 is a schematic diagram showing an atomic layer deposition apparatus 10 related to an embodiment of the present invention, FIG. 2 is a schematic diagram showing an embodiment of a powder holder 100, and FIGS. 3 and 4 are a powder holder 110 It is a schematic diagram showing another embodiment of.

The atomic layer deposition apparatus 10 may be used for surface coating of powders (or'particles').

The atomic layer deposition apparatus 10 includes a reaction chamber 40. In addition, the reaction chamber 40 includes an inlet port, a first accommodation space, and an exhaust port.

According to an embodiment of the present invention, the atomic layer deposition apparatus 10 includes at least one inlet port 41 and an inlet port provided to be connected with at least one supply source 20 for supplying at least one source gas and an inert gas, respectively. A reaction chamber having a first accommodation space connected to 41 and one or more exhaust ports 42 connected to the first accommodation space and connected to a pumping unit 30 for exhausting gas supplied to the first accommodation space It includes (40).

In addition, the atomic layer deposition apparatus 10 includes one or more powder holders 100 and 110 disposed in the reaction chamber 40, open on one side, and having a second receiving space S for receiving particles. .

Referring to FIG. 2, the powder holder 100 may be formed of a porous mesh on at least one surface forming the second accommodation space. The porous mesh may have a mesh having a size capable of flowing out of the gas, and in particular, may have a mesh having a size capable of preventing the contained powder from being separated. In addition, the size and shape of the mesh may be appropriately determined based on the particles to be accommodated, required gas flow, and the like.

Referring to FIG. 2, the powder holder 100 may have an upper surface of the second accommodation space S open. In this structure, for example, the powder holder 100 may include a bottom surface 101 forming a second accommodation space S, and four side surfaces 102, 103, 104, and 105. In this case, the lower surface 101 in the opposite direction to the upper surface of the second accommodation space S may be formed of a porous mesh.

For example, the depth h of the second accommodation space S may be 5 mm or less, the depth of the second accommodation space may be 3 mm or less, and the depth of the second accommodation space may be 1 mm or less.

As described above, the powder holder 100 may have an upper surface of the second accommodation space S open. However, in the case of powder that may be lost during the atomic layer deposition process, the powder may be filled in the second accommodation space S of the powder holder 1000 and then a lid may be mounted on the upper surface. At this time, the lid is preferably made of a porous mesh.

3 and 4, the powder holder 110 may have an upper surface of the second accommodation space open, for example, the powder holder 100 is a bottom forming the second accommodation space (S) It may include a face 111, and four side surfaces 112, 113, 114, 115. In this case, all of the remaining surfaces 111, 112, 113, 114, and 115 forming the second accommodation space S may be formed of a porous mesh.

In addition, in the atomic layer deposition apparatus 10, the inlet port 41 and the exhaust port 42 may be disposed so that gas injection and pumping are performed in parallel with the upper or lower surface of the powder holder 100, respectively.

In one embodiment, in the reaction chamber 110, a plurality of powder holders may be arranged apart at predetermined intervals along the height direction (y-axis direction). In FIG. 1, the x-axis direction represents the direction in which gas passes through the reaction chamber 40, and the y-axis direction represents the height direction of the reaction chamber 40. In this case, the plurality of inlet ports and the plurality of exhaust ports may be disposed at predetermined intervals along the height direction of the reaction chamber 40, respectively. In addition, a pair of inlet ports and exhaust ports may be positioned in pairs at the same height along the height direction of the reaction chamber.

Each of the pair of inlet ports and exhaust ports may be disposed so that gas injection and pumping are performed in parallel with the upper surface or the lower surface of the powder holder 100.

In addition, the atomic layer deposition apparatus 10 may include one or more cassettes (not shown) for simultaneously supporting a plurality of powder holders 100.

Further, the cassette may be provided to position the supported plurality of powder holders 100 at the same height within the reaction chamber 40. In addition, the cassette may be provided to support 1 to 100 powder holders 100. In addition, the cassette may support the powder holder 100 in a state in which the upper and lower surfaces of the powder holder 100 are exposed into the reaction chamber 40.

Further, according to another aspect of the present invention, the atomic layer deposition apparatus 10 includes one or more supply sources 20 for supplying one or more source gases and inert gases, respectively.

In addition, the atomic layer deposition apparatus 10 is connected to at least one inlet port 41 provided to be connected to the supply source 20, a first receiving space connected to the inlet port, and a first receiving space, and supplied to the first receiving space. And a reaction chamber 40 having one or more exhaust ports 42 for evacuating the resulting gas.

In addition, one or more valves may be provided between the supply source 20 and the inlet port 41.

In addition, the atomic layer deposition apparatus 10 includes a pumping unit 30 connected to the exhaust port 42.

In addition, one or more valves may be provided between the pumping unit 30 and the exhaust port 42.

In addition, the atomic layer deposition apparatus 10 includes one or more powder holders 100 disposed in the reaction chamber 40, open on one side, and having a second accommodation space for receiving particles.

In addition, the atomic layer deposition apparatus 10 may include a control unit for controlling the supply source 20 and the pumping unit 30.

In addition, when the powder holder is disposed in the reaction chamber, the control unit is provided to cross-inject the source gas and the inert gas into the first accommodation space.

The supply source 20 may include a source gas supply source for supplying one or more source gases for performing a surface treatment process of particles, and an inert gas supply source for performing a purge process.

In addition, a plurality of sources may be provided for each supply source. For example, when a plurality of source gas supply sources are provided, different deposition materials may be provided to be supplied to the particles. That is, first and second deposition layers of different materials may be respectively deposited on the particle surface through a plurality of source gas supply sources provided to supply different source gases. For example, in the first and second source gas sources, a source gas of TMA and H ₂ O may be used, and in the third and fourth source gas sources, a source gas of TiCl ₄ and H ₂ O may be used. . In addition, as the source gas, various combinations of oxides, nitrides, sulfides, and single elements can be used.

Preferred embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art who have ordinary knowledge of the present invention will be able to make various modifications, changes and additions within the spirit and scope of the present invention, And additions should be seen as falling within the scope of the following claims.

10: atomic layer deposition apparatus
20: source
30: pumping part
40: reaction chamber

Claims (10)

As an atomic layer deposition apparatus for coating the surface of particles,
At least one inlet port provided to be connected to at least one supply source for supplying at least one source gas and an inert gas, respectively, a first receiving space connected to the inlet port, and a gas connected to the first receiving space, and supplied to the first receiving space A reaction chamber having at least one exhaust port provided to be connected to a pumping unit for exhausting the gas; And
An atomic layer deposition apparatus comprising at least one powder holder disposed in a reaction chamber, one surface open, and having a second accommodation space for receiving particles. The method of claim 1,
The powder holder is formed of a porous mesh at least one surface forming the second accommodation space, atomic layer deposition apparatus. The method of claim 2,
The powder holder has an upper surface of the second accommodation space open, and a lower surface opposite to the upper surface is formed of a porous mesh. The method of claim 2,
In the powder holder, an upper surface of the second accommodation space is opened, and all other surfaces forming the second accommodation space are formed of a porous mesh. The method according to claim 3 or 4
The inlet port and the exhaust port are respectively arranged so that gas injection and pumping are performed in parallel with the upper or lower surface of the powder holder. The method of claim 1,
A plurality of powder holders are arranged apart at predetermined intervals along the height direction in the reaction chamber,
The plurality of inlet ports and the plurality of exhaust ports are each disposed at a predetermined distance along the height direction of the reaction chamber,
A pair of inlet ports and exhaust ports are positioned in pairs at the same height along the height direction of the reaction chamber. The method of claim 6,
An atomic layer deposition apparatus comprising one or more cassettes for simultaneously supporting a plurality of powder holders. The method of claim 7,
The cassette is provided to position a plurality of supported powder holders at the same height in the reaction chamber, atomic layer deposition apparatus. The method of claim 8,
The cassette is provided to support 1 to 100 powder holders, atomic layer deposition apparatus. At least one source for supplying at least one source gas and an inert gas, respectively;
A reaction chamber having at least one inlet port provided to be connected to the supply source, a first receiving space connected to the inlet port, and one or more exhaust ports connected to the first receiving space and for exhausting gas supplied to the first receiving space;
A pumping unit connected to the exhaust port;
One or more powder holders disposed in the reaction chamber, open on one side, and having a second receiving space for receiving particles; And
It includes a control unit for controlling the supply source and the pumping unit,
The control unit is an atomic layer deposition apparatus for cross-injecting a source gas and an inert gas into the first accommodation space when the powder holder is disposed in the reaction chamber.

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